Radio frequency circuit, radio frequency front-end module and electronic device

Abstract

Embodiments of the present application provide a radio frequency circuit, a radio frequency front-end module and an electronic device, which are applied to the technical field of communication. The radio frequency circuit comprises a radio frequency device and a resonance network. The radio frequency device comprises a first port and a second port. A channel between the first port and the second port is used for transmitting a radio frequency signal of a first frequency band. The resonance network is connected in parallel between the first port and the second port. The resonance network is used for forming resonance with the radio frequency device. A first frequency point of the resonance network and a second frequency point of the radio frequency device satisfy a preset condition. The first frequency point is a resonance zero point of the resonance network itself, and the second frequency point is a resonance zero point of the radio frequency device itself. In this way, by connecting the resonance network in parallel between the two ports of the radio frequency device, the versatility of the radio frequency device in use is improved.

Description

Technical Field

[0001] This application relates to the field of communication technology, and in particular to a radio frequency circuit, a radio frequency front-end module, and an electronic device. Background Technology

[0002] With the rapid development of technology, mobile phones and other electronic devices have become common tools in people's lives and work. Currently, some electronic devices support multiple communication methods such as cellular communication and wireless fidelity (WiFi) communication.

[0003] For electronic devices with communication functions, RF devices such as combiners and filters can be installed in the RF front-end module of the electronic device. However, these RF devices have poor versatility in use. Summary of the Invention

[0004] This application provides a radio frequency circuit, a radio frequency front-end module, and an electronic device, which improves the versatility of the radio frequency device by connecting a resonant network in parallel between two ports of the radio frequency device.

[0005] In a first aspect, embodiments of this application propose a radio frequency (RF) circuit, comprising: an RF device and a resonant network; the RF device includes a first port and a second port, and a channel between the first port and the second port is used to transmit RF signals in a first frequency band; the resonant network is connected in parallel between the first port and the second port, and the resonant network is used to form resonance with the RF device; wherein, the first frequency point of the resonant network and the second frequency point of the RF device satisfy a preset condition, the first frequency point being the resonant zero point of the resonant network itself, and the second frequency point being the resonant zero point of the RF device itself.

[0006] Thus, in this embodiment of the application, a resonant network can be connected in parallel between the two ports of the radio frequency device. Through the mutual influence between the radio frequency device and the resonant network, the radio frequency device and the resonant network can resonate, thereby optimizing the performance of the radio frequency device and improving its versatility in use.

[0007] In one possible implementation, for each first frequency point and its corresponding second frequency point, the preset conditions include at least one of the following: the relative bandwidth between the first and second frequency points is less than or equal to a first threshold; the relative bandwidth is the absolute value of the difference between the first and second frequency points divided by the second frequency point; the first offset of the resonant network is less than or equal to the second threshold, and the second offset of the RF device is less than or equal to a third threshold; the first offset is the absolute value of the difference between the third and first frequency points divided by the first frequency point, where the third frequency point is the frequency point after the first frequency point has shifted due to the interaction between the resonant network and the RF device; the second offset is the absolute value of the difference between the fourth and second frequency points divided by the second frequency point, where the fourth frequency point is the frequency point after the second frequency point has shifted due to the interaction between the resonant network and the RF device; the absolute value of the difference between the first and second frequency points is less than or equal to the frequency point difference; the frequency point difference is the absolute value of the difference between the fifth and sixth frequency points, where the fifth frequency point is the frequency point corresponding to the maximum insertion loss of the resonant network itself, and the sixth frequency point is the frequency point corresponding to the minimum insertion loss of the resonant network itself. In this way, by combining the first frequency point of the resonant network and the second frequency point of the RF device, the resonant network connected in parallel between the two ports of the RF device can better optimize the performance of the RF device.

[0008] In one possible implementation, the first threshold is 0.3, the second threshold is 0.15, and the third threshold is 0.15.

[0009] In one possible implementation, the resonant network includes at least one inductor and / or at least one capacitor.

[0010] In one possible implementation, the radio frequency (RF) device is a combiner, which also includes a third port. The channel between the first and third ports is used to transmit RF signals in a second frequency band, which is different from the first frequency band. A resonant network is used to improve the isolation between the RF signals in the first and second frequency bands. Thus, this embodiment adds a resonant network around the combiner. Through the interaction between the combiner and the resonant network, they resonate, optimizing insertion loss and increasing isolation at the corresponding frequency. Therefore, the original combiner can be used for electronic devices with different isolation requirements, thereby improving the versatility of the combiner.

[0011] In one possible implementation, the resonant network includes a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, and a first capacitor. The first terminal of the first inductor is electrically connected to a first port; the second terminal of the first inductor is electrically connected to the first terminal of the second inductor; the second terminal of the second inductor is electrically connected to the first terminal of the third inductor; the second terminal of the third inductor is electrically connected to a second port; the first terminal of the fourth inductor is electrically connected to the second terminal of the first inductor; the second terminal of the fourth inductor is electrically connected to the first terminal of the fifth inductor; the second terminal of the fifth inductor is electrically connected to the second terminal of the second inductor; the first terminal of the first capacitor is electrically connected to the second terminal of the fourth inductor; and the second terminal of the first capacitor is electrically connected to ground. This provides a specific structure for a first resonant network connected in parallel between the first and second ports of the combiner, which can improve the isolation between the RF signals transmitted on the two channels of the combiner, and also results in relatively little increased passband insertion loss.

[0012] In one possible implementation, the resonant network includes a sixth inductor, a seventh inductor, an eighth inductor, a ninth inductor, a second capacitor, and a third capacitor. The first terminal of the sixth inductor is electrically connected to the first terminal of the third capacitor, and the second terminal of the sixth inductor is electrically connected to the second terminal of the third capacitor. The first terminal of the seventh inductor is electrically connected to the first port, and the second terminal of the seventh inductor is electrically connected to the first terminal of the eighth inductor. The second terminal of the eighth inductor is electrically connected to the second port. The first terminal of the ninth inductor is electrically connected to the first terminal of the seventh inductor, and the second terminal of the ninth inductor is electrically connected to the second terminal of the eighth inductor. The first terminal of the second capacitor is electrically connected to the second terminal of the seventh inductor, and the second terminal of the second capacitor is electrically connected to the first terminal of the third capacitor. The second terminal of the third capacitor is electrically connected to ground. This provides a specific structure for a second resonant network connected in parallel between the first and second ports of the combiner, which can improve the isolation between the RF signals transmitted on the two channels of the combiner, and the increased passband insertion loss is relatively small.

[0013] In one possible implementation, the resonant network includes a tenth inductor, an eleventh inductor, a twelfth inductor, a thirteenth inductor, a fourteenth inductor, and a fourth capacitor. The first terminal of the tenth inductor is electrically connected to the first port, and the second terminal of the tenth inductor is electrically connected to the first terminal of the fourth capacitor. The first terminal of the eleventh inductor is electrically connected to the second terminal of the fourth capacitor, and the second terminal of the eleventh inductor is electrically connected to the second port. The first terminal of the twelfth inductor is electrically connected to the second terminal of the tenth inductor, and the second terminal of the twelfth inductor is electrically connected to the first terminal of the thirteenth inductor. The second terminal of the thirteenth inductor is electrically connected to the first terminal of the eleventh inductor. The first terminal of the fourteenth inductor is electrically connected to the second terminal of the twelfth inductor, and the second terminal of the fourteenth inductor is electrically connected to ground. This provides a specific structure for a third type of resonant network connected in parallel between the first and second ports of the combiner, which can improve the isolation between the RF signals transmitted on the two channels of the combiner, and also results in relatively little increased passband insertion loss.

[0014] In one possible implementation, the resonant network includes a fifteenth inductor, a sixteenth inductor, and a seventeenth inductor; wherein the first end of the fifteenth inductor is electrically connected to the first port, the second end of the fifteenth inductor is electrically connected to the first end of the sixteenth inductor, the second end of the sixteenth inductor is electrically connected to the second port, and the first end of the seventeenth inductor is electrically connected to the first end of the sixteenth inductor, and the second end of the seventeenth inductor is electrically connected to the second end of the sixteenth inductor. This provides a specific structure for a fourth type of resonant network connected in parallel between the first and second ports of the combiner, which can improve the isolation between the RF signals transmitted on the two channels of the combiner, and also results in relatively little increased passband insertion loss.

[0015] In one possible implementation, the resonant network includes an eighteenth inductor, a nineteenth inductor, a twentieth inductor, a twenty-first inductor, a fifth capacitor, and a sixth capacitor. The first terminal of the eighteenth inductor is electrically connected to the first port, and the second terminal of the eighteenth inductor is electrically connected to the second port. The first terminal of the nineteenth inductor is electrically connected to the first terminal of the eighteenth inductor, and the second terminal of the nineteenth inductor is electrically connected to the first terminal of the twentieth inductor. The second terminal of the twentieth inductor is electrically connected to the second terminal of the eighteenth inductor. The first terminal of the twenty-first inductor is electrically connected to ground, and the second terminal of the twenty-first inductor is electrically connected to the second terminal of the eighteenth inductor. The first terminal of the fifth capacitor is electrically connected to the first terminal of the twenty-first inductor, and the second terminal of the fifth capacitor is electrically connected to the first terminal of the sixth capacitor. The second terminal of the sixth capacitor is electrically connected to the second terminal of the eighteenth inductor. This provides a specific structure for a fifth resonant network connected in parallel between the first and second ports of the combiner, which can improve the isolation between the RF signals transmitted on the two channels of the combiner, and also results in relatively little increased passband insertion loss.

[0016] In one possible implementation, the resonant network includes a 22nd inductor, a 23rd inductor, a 24th inductor, a 25th inductor, a 7th capacitor, and an 8th capacitor. The first terminal of the 22nd inductor is electrically connected to the first terminal of the 7th capacitor, and the second terminal of the 22nd inductor is electrically connected to the second terminal of the 8th capacitor. The first terminal of the 23rd inductor is electrically connected to the first port, and the second terminal of the 23rd inductor is electrically connected to the first terminal of the 24th inductor. The second terminal of the 24th inductor is electrically connected to the second port. The first terminal of the 25th inductor is electrically connected to the first terminal of the 23rd inductor, and the second terminal of the 25th inductor is electrically connected to the second terminal of the 24th inductor. The first terminal of the 7th capacitor is electrically connected to the second terminal of the 23rd inductor, and the second terminal of the 7th capacitor is electrically connected to the first terminal of the 8th capacitor. The second terminal of the 8th capacitor is electrically connected to ground. This provides a specific structure for a sixth resonant network connected in parallel between the first and second ports of the combiner, which can improve the isolation between the RF signals transmitted on the two channels of the combiner, with relatively little increase in passband insertion loss.

[0017] In one possible implementation, the resonant network includes a 26th inductor, a 27th inductor, a 9th capacitor, a 10th capacitor, and an 11th capacitor. The first terminal of the 26th inductor is electrically connected to the first port; the second terminal of the 26th inductor is electrically connected to the first terminal of the 9th capacitor; the second terminal of the 9th capacitor is electrically connected to the first terminal of the 10th capacitor; the second terminal of the 10th capacitor is electrically connected to the second port; the first terminal of the 11th capacitor is electrically connected to the first terminal of the 9th capacitor; the second terminal of the 11th capacitor is electrically connected to the first terminal of the 27th inductor; and the second terminal of the 27th inductor is electrically connected to the second terminal of the 9th capacitor. This provides a specific structure for a seventh resonant network connected in parallel between the first and second ports of the combiner, which can improve the isolation between the RF signals transmitted on the two channels of the combiner with relatively little increase in passband insertion loss.

[0018] In one possible implementation, the radio frequency device is a filter used to filter out signals other than radio frequency signals in the channel between the first port and the second port, except for those in the first frequency band. A resonant network is used to adjust the passband impedance of the filter. Thus, embodiments of this application can add a resonant network around the filter. Through the interaction between the filter and the resonant network, the filter and the resonant network resonate, improving the filter's internal filtering characteristics. Therefore, adding the same resonant network around filters from different manufacturers makes the passband impedance of filters from different manufacturers more consistent, increasing the consistency of filters from different manufacturers. This allows filters from different manufacturers to be used freely on the same type of electronic device, improving the versatility of the filter.

[0019] In one possible implementation, the resonant network includes a 28th inductor, a 29th inductor, a 30th inductor, a 31st inductor, a 32nd inductor, a 33rd inductor, a 12th capacitor, and a 13th capacitor; wherein, the first end of the 28th inductor is electrically connected to a first port, and the second end of the 28th inductor is electrically connected to the first end of the 12th capacitor; the second end of the 12th capacitor is electrically connected to the first end of the 30th inductor; the first end of the 29th inductor is electrically connected to the first end of the 12th capacitor, and the second end of the 29th inductor is electrically connected to the first end of the 13th capacitor; the second end of the 13th capacitor is electrically connected to the first end of the 30th inductor; the second end of the 30th inductor is electrically connected to a second port; the first end of the 31st inductor is electrically connected to the second end of the 28th inductor, and the second end of the 31st inductor is electrically connected to a ground terminal; the first end of the 32nd inductor is electrically connected to the first end of the 30th inductor, and the second end of the 32nd inductor is electrically connected to a ground terminal; the first end of the 33rd inductor is electrically connected to the second end of the 30th inductor, and the second end of the 33rd inductor is electrically connected to a ground terminal. This provides a specific structure for a first type of resonant network connected in parallel between the first and second ports of a filter, which can improve the consistency of the passband impedance of filters from different manufacturers and reduce the increase in passband insertion loss.

[0020] In one possible implementation, the resonant network includes a 34th inductor, a 35th inductor, a 36th inductor, a 37th inductor, a 14th capacitor, and a 15th capacitor. The first terminal of the 34th inductor is electrically connected to the first port; the second terminal of the 34th inductor is electrically connected to the first terminal of the 14th capacitor; the second terminal of the 14th capacitor is electrically connected to the first terminal of the 36th inductor; the first terminal of the 35th inductor is electrically connected to the first terminal of the 14th capacitor; the second terminal of the 35th inductor is electrically connected to the first terminal of the 36th inductor; the second terminal of the 36th inductor is electrically connected to the second port; the first terminal of the 37th inductor is electrically connected to the first terminal of the 36th inductor; and the second terminal of the 37th inductor is electrically connected to ground; the first terminal of the 15th capacitor is electrically connected to the second terminal of the 34th inductor; and the second terminal of the 15th capacitor is electrically connected to ground. This provides a specific structure for a second type of resonant network connected in parallel between the first and second ports of the filter, which can improve the consistency of the passband impedance of filters from different manufacturers and reduce the increased passband insertion loss.

[0021] Secondly, embodiments of this application propose a radio frequency front-end module, including the radio frequency circuit described above.

[0022] Thirdly, embodiments of this application propose an electronic device, including: a baseband chip, a radio frequency chip, an antenna, and the aforementioned radio frequency front-end module; wherein the baseband chip is electrically connected to the radio frequency chip, the radio frequency chip is electrically connected to the radio frequency front-end module, and the radio frequency front-end module is electrically connected to the antenna.

[0023] The possible implementations of the second and third aspects have similar effects to those of the first aspect and the possible designs of the first aspect, and will not be elaborated here. Attached Figure Description

[0024] Figure 1 A schematic diagram of the hardware system structure of the electronic device provided in the embodiments of this application;

[0025] Figure 2 A schematic diagram illustrating the principle of wireless communication in an electronic device provided in this application embodiment;

[0026] Figure 3 A schematic diagram of a radio frequency circuit provided for related technologies;

[0027] Figure 4 for Figure 3 The insertion loss versus frequency response diagram of the RF circuit is shown.

[0028] Figure 5 A schematic diagram of another radio frequency circuit provided for related technologies;

[0029] Figure 6 A schematic diagram of a first radio frequency circuit provided in an embodiment of this application;

[0030] Figure 7 for Figure 6 The insertion loss versus frequency response diagram of the RF circuit is shown.

[0031] Figure 8 for Figure 6 The diagram shows the isolation versus frequency response of the RF circuit.

[0032] Figure 9 A schematic diagram of a second radio frequency circuit provided in an embodiment of this application;

[0033] Figure 10 for Figure 9 The insertion loss versus frequency response diagram of the RF circuit is shown.

[0034] Figure 11 for Figure 9 The diagram shows the isolation versus frequency response of the RF circuit.

[0035] Figure 12 A schematic diagram of a third radio frequency circuit provided in an embodiment of this application;

[0036] Figure 13 for Figure 12 The insertion loss versus frequency response diagram of the RF circuit is shown.

[0037] Figure 14A schematic diagram of a fourth radio frequency circuit provided in an embodiment of this application;

[0038] Figure 15 for Figure 14 The insertion loss versus frequency response diagram of the RF circuit is shown.

[0039] Figure 16 for Figure 14 The diagram shows the isolation versus frequency response of the RF circuit.

[0040] Figure 17 A schematic diagram of the fifth radio frequency circuit provided in the embodiments of this application;

[0041] Figure 18 for Figure 17 The insertion loss versus frequency response diagram of the RF circuit is shown.

[0042] Figure 19 for Figure 17 The diagram shows the isolation versus frequency response of the RF circuit.

[0043] Figure 20 A schematic diagram of a sixth radio frequency circuit provided in an embodiment of this application;

[0044] Figure 21 A schematic diagram of the seventh radio frequency circuit provided in the embodiments of this application;

[0045] Figure 22 for Figure 21 The insertion loss versus frequency response diagram of the RF circuit is shown.

[0046] Figure 23 for Figure 21 The diagram shows the isolation versus frequency response of the RF circuit.

[0047] Figure 24 A schematic diagram of the eighth radio frequency circuit provided in the embodiments of this application;

[0048] Figure 25 To ensure that the two ends of different filters are not connected in parallel Figure 24 The resonant network in the filter, and the parallel connection at both ends of different filters. Figure 24 The corresponding insertion loss versus frequency response diagram after the resonant network in the diagram;

[0049] Figure 26 To ensure that the two ends of different filters are not connected in parallel Figure 24 The resonant network in the filter, and the parallel connection at both ends of different filters. Figure 24 The diagram shows the position of the corresponding impedance on the Smith chart after the resonant network in the diagram.

[0050] Figure 27 A schematic diagram of the ninth radio frequency circuit provided in the embodiments of this application;

[0051] Figure 28 To ensure that the two ends of different filters are not connected in parallel Figure 27 The resonant network in the filter, and the parallel connection at both ends of different filters. Figure 27 The corresponding insertion loss versus frequency response diagram after the resonant network in the diagram;

[0052] Figure 29 This is a schematic diagram showing the resonant zeros of the resonant network and the combiner. Detailed Implementation

[0053] To facilitate a clear description of the technical solutions in the embodiments of this application, the terms "first" and "second" are used in the embodiments of this application to distinguish identical or similar items with essentially the same function and purpose. For example, "first chip" and "second chip" are used only to distinguish different chips and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and the terms "first" and "second" do not necessarily imply that they are different.

[0054] It should be noted that, in the embodiments of this application, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design scheme described as "exemplary" or "for example" in this application should not be construed as being more preferred or advantageous than other embodiments or design schemes. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0055] The terms "coupling" and "connection" used in the embodiments of this application should be interpreted broadly. For example, they can refer to a physical direct connection or an indirect connection implemented through electronic devices, such as a connection implemented through resistors, inductors, capacitors or other electronic devices.

[0056] To facilitate understanding of the technical solutions in the embodiments of this application, some terms involved in the embodiments of this application will be briefly explained below.

[0057] (1) Combiner

[0058] A combiner is a circuit that combines multiple input radio frequency signals into a single output radio frequency signal.

[0059] (2) Filter

[0060] A filter is a filtering circuit that can effectively filter out frequencies at a specific frequency or frequencies other than that frequency to obtain a signal of a specific frequency or to eliminate other signals after a specific frequency.

[0061] (3) Duplexer

[0062] A duplexer typically consists of two sets of filters with different frequencies combined. One filter acts as the transmitting filter, and the other acts as the receiving filter. The two filters share a common node (antenna). Its function is to isolate the transmitted signal from the received signal and allow both transmission and reception to work normally at the same time.

[0063] (4) Multiplexer

[0064] A multiplexer is a type of combinational circuit, encompassing devices such as triplets and quadplexers. A multiplexer has a single input port and multiple output ports; it is a set of non-superimposed filters. These filters are combined in a way that ensures they do not load each other, and the outputs are highly isolated.

[0065] (5) Insertion loss

[0066] Insertion loss, also known as insertion loss, refers to the loss of energy or gain when a circuit device or branch circuit is added to a circuit. The unit is usually decibel (dB). A larger absolute value of the insertion loss indicates greater insertion loss; a smaller absolute value indicates less insertion loss.

[0067] (6) Isolation

[0068] Isolation is used to represent the ratio of the power of an RF signal leaking to other ports to the input power, and is usually measured in dB. A larger absolute value of isolation indicates better isolation, while a smaller absolute value indicates poorer isolation.

[0069] (7) Passband

[0070] The passband refers to the frequency band that can be covered by radio frequency signals that can pass through devices such as filters and combiners.

[0071] (8) Stopband

[0072] The stopband refers to the frequency band that radio frequency signals cannot pass through devices such as filters and combiners.

[0073] (9) Resonance Zero

[0074] A resonant zero is the frequency point at which the system output is zero in the frequency response. In other words, a zero is the frequency at which the numerator of the transfer function of devices such as filters is zero. These frequencies correspond to specific frequencies of the input signal. At these frequencies, the gain of the filter or other device on the signal is zero, meaning that signals at these frequencies will be completely attenuated.

[0075] The radio frequency circuits provided in this application can be applied to electronic devices with communication functions. Electronic devices include terminal devices, which can also be called terminals, user equipment (UE), mobile stations (MS), mobile terminals (MT), etc. Terminal devices can be mobile phones, smart TVs, wearable devices, tablets, computers with wireless transceiver capabilities, virtual reality (VR) terminal devices, augmented reality (AR) terminal devices, wireless terminals in industrial control, wireless terminals in self-driving, wireless terminals in remote medical surgery, wireless terminals in smart grids, wireless terminals in transportation safety, wireless terminals in smart cities, wireless terminals in smart homes, and so on. The embodiments of this application do not limit the specific technologies or device forms used in the electronic devices.

[0076] To better understand the embodiments of this application, the structure of the electronic device of the embodiments of this application is described below.

[0077] Figure 1 A schematic diagram of the structure of electronic device 100 is shown. Electronic device 100 may include a processor 110, an external memory interface 120, an internal memory 121, a universal serial bus (USB) interface 130, a charging management module 140, a power management module 141, a battery 142, antenna 1, antenna 2, a mobile communication module 150, a wireless communication module 160, an audio module 170, a speaker 170A, a receiver 170B, a microphone 170C, a headphone jack 170D, a sensor module 180, buttons 190, a motor 191, an indicator 192, a camera 193, a display screen 194, and a subscriber identification module (SIM) card interface 195, etc.

[0078] It is understood that the structures illustrated in the embodiments of this application do not constitute a specific limitation on the electronic device 100. In other embodiments of this application, the electronic device 100 may include more or fewer components than illustrated, or combine some components, or split some components, or have different component arrangements. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

[0079] Processor 110 may include one or more processing units, such as application processors (APs), modem processors, graphics processing units (GPUs), image signal processors (ISPs), controllers, video codecs, digital signal processors (DSPs), baseband processors, and / or neural network processing units (NPUs). These different processing units may be independent devices or integrated into one or more processors.

[0080] The controller can generate operation control signals based on the instruction opcode and timing signals to complete the control of instruction fetching and execution.

[0081] The processor 110 may also include a memory for storing instructions and data. In some embodiments, the memory in the processor 110 is a cache memory. This memory can store instructions or data that the processor 110 has just used or that are used repeatedly. If the processor 110 needs to use the instruction or data again, it can retrieve it from the memory. This avoids repeated accesses, reduces the waiting time of the processor 110, and thus improves the efficiency of the system.

[0082] The charging management module 140 receives charging input from a charger. The charger can be a wireless charger or a wired charger. In some wired charging embodiments, the charging management module 140 receives charging input from the wired charger via the USB interface 130. In some wireless charging embodiments, the charging management module 140 receives wireless charging input via the wireless charging coil of the electronic device 100. While charging the battery 142, the charging management module 140 can also supply power to the electronic device via the power management module 141.

[0083] The power management module 141 connects the battery 142, the charging management module 140, and the processor 110. The power management module 141 receives input from the battery 142 and / or the charging management module 140 to power the processor 110, internal memory 121, display screen 194, camera 193, and wireless communication module 160, etc. In some embodiments, the power management module 141 and the charging management module 140 may also be housed in the same device.

[0084] The wireless communication function of electronic device 100 can be realized through antenna 1, antenna 2, mobile communication module 150, wireless communication module 160, modem processor and baseband processor, etc.

[0085] Antennas 1 and 2 are used to transmit and receive electromagnetic wave signals. The antennas in electronic device 100 can be used to cover one or more communication frequency bands. Different antennas can also be reused to improve antenna utilization. For example, antenna 1 can be reused as a diversity antenna for a wireless local area network. In some other embodiments, the antennas can be used in conjunction with a tuning switch.

[0086] The mobile communication module 150 can provide solutions for wireless communication, including 2G / 3G / 4G / 5G, applied to the electronic device 100. The mobile communication module 150 may include at least one filter, switch, power amplifier, low noise amplifier (LNA), etc. The mobile communication module 150 can receive electromagnetic waves via antenna 1, and perform filtering, amplification, and other processing on the received electromagnetic waves before transmitting them to a modem processor for demodulation. The mobile communication module 150 can also amplify the signal modulated by the modem processor and convert it into electromagnetic waves for radiation via antenna 1. In some embodiments, at least some functional modules of the mobile communication module 150 may be housed in the processor 110. In some embodiments, at least some functional modules of the mobile communication module 150 and at least some modules of the processor 110 may be housed in the same device.

[0087] The modem processor may include a modulator and a demodulator. The modulator modulates the low-frequency baseband signal to be transmitted into a mid-to-high frequency signal. The demodulator demodulates the received electromagnetic wave signal into a low-frequency baseband signal. The demodulator then transmits the demodulated low-frequency baseband signal to the baseband processor for processing. After processing by the baseband processor, the low-frequency baseband signal is transmitted to the application processor. The application processor outputs sound signals through an audio device (not limited to speaker 170A, receiver 170B, etc.) or displays images or videos through the display screen 194. In some embodiments, the modem processor may be a separate device. In other embodiments, the modem processor may be independent of the processor 110 and may be housed in the same device as the mobile communication module 150 or other functional modules.

[0088] The wireless communication module 160 can provide solutions for wireless communication applications on the electronic device 100, including wireless local area networks (WLAN) (such as WiFi), Bluetooth (BT), global navigation satellite system (GNSS), frequency modulation (FM), near field communication (NFC), and infrared (IR). The wireless communication module 160 can be one or more devices integrating at least one communication processing module. The wireless communication module 160 receives electromagnetic waves via antenna 2, performs frequency modulation and filtering of the electromagnetic wave signal, and sends the processed signal to processor 110. The wireless communication module 160 can also receive signals to be transmitted from processor 110, perform frequency modulation and amplification, and convert them into electromagnetic waves for radiation via antenna 2.

[0089] In some embodiments, antenna 1 of electronic device 100 is coupled to mobile communication module 150, and antenna 2 is coupled to wireless communication module 160, enabling electronic device 100 to communicate with networks and other devices via wireless communication technology. Wireless communication technology may include Global System for Mobile Communications (GSM), General Packet Radio Service (GPRS), Code Division Multiple Access (CDMA), Wideband Code Division Multiple Access (WCDMA), Time Division Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), BT, GNSS, WLAN, NFC, FM, and / or IR technologies, etc. GNSS can include the Global Positioning System (GPS), the Global Navigation Satellite System (GLONASS), the BeiDou Navigation Satellite System (BDS), the Quasi-Zenith Satellite System (QZSS), and / or satellite-based augmentation systems (SBAS).

[0090] Electronic device 100 implements display functions through GPU, display screen 194, and application processor.

[0091] Electronic device 100 can perform shooting functions through ISP, camera 193, video codec, GPU, display 194 and application processor.

[0092] The external storage interface 120 can be used to connect an external memory card, such as a Micro SD card, to expand the storage capacity of the electronic device 100. The external memory card communicates with the processor 110 through the external storage interface 120 to perform data storage functions. For example, music, video, and other files can be saved on the external memory card.

[0093] Internal memory 121 can be used to store executable program code, including instructions. Internal memory 121 may include a program storage area and a data storage area. The program storage area may store the operating system, at least one application program required for a function (such as sound playback, image playback, etc.), etc. The data storage area may store data created during the use of electronic device 100 (such as audio data, phonebook, etc.). Furthermore, internal memory 121 may include high-speed random access memory, and may also include non-volatile memory, such as at least one disk storage device, flash memory device, universal flash storage (UFS), etc. Processor 110 executes various functional applications and data processing of electronic device 100 by running instructions stored in internal memory 121 and / or instructions stored in memory located within the processor.

[0094] Electronic device 100 can implement audio functions, such as music playback and recording, through audio module 170, speaker 170A, receiver 170B, microphone 170C, headphone jack 170D, and application processor.

[0095] Buttons 190 include a power button, volume buttons, etc. Electronic device 100 can receive button input and generate key signal inputs related to user settings and function control. Motor 191 can generate vibration alerts. Motor 191 can be used for incoming call vibration alerts or for touch vibration feedback. Indicator 192 can be an indicator light, used to indicate charging status, battery level changes, messages, missed calls, notifications, etc. SIM card interface 195 is used to connect a SIM card. The SIM card can be inserted into or removed from the SIM card interface 195 to achieve contact and separation with electronic device 100.

[0096] In some embodiments, such as Figure 2 As shown, the mobile communication module 150 and the wireless communication module 160 may include a baseband chip 210, a radio frequency integrated circuit (RFIC) chip 220, and a radio frequency front end (RFFE) module 230, etc. The baseband chip 210 can also be called a modem chip. The baseband chip 210 is electrically connected to the radio frequency chip 220, the radio frequency chip 220 is electrically connected to the radio frequency front end module 230, and the radio frequency front end module 230 is electrically connected to the antenna.

[0097] In scenarios where electronic devices transmit signals, the baseband chip 210 encodes the data to be transmitted from the processor 110 into a baseband signal and sends the baseband signal to the radio frequency (RF) chip 220. The RF chip 220 converts the baseband signal into an RF signal, which is then processed by the RF front-end module 230 through up-conversion, filtering, and amplification before being transmitted to the antenna and transmitted. The path from the baseband chip 210 to the antenna can be called the transmission link.

[0098] In scenarios where electronic devices receive signals, the antenna transmits the received radio frequency (RF) signal to the RF front-end module 230. The RF front-end module 230 processes the RF signal through frequency selection, filtering, amplification, and down-conversion before sending it to the RF chip 220. The RF chip 220 converts the RF signal into a baseband signal and sends it to the baseband chip 210. The baseband chip 210 decodes the baseband signal into data and sends it to the corresponding processor. The path from the antenna to the baseband chip 210 can be called the receiving link.

[0099] The radio frequency front-end module 230 may include devices such as combiners, filters, duplexers, multiplexers, power amplifiers (PA), and antenna switches.

[0100] Antenna switches are used to selectively couple an antenna to a transmit link or a receive link. Figure 2 This illustration only shows one antenna in an electronic device. In reality, an electronic device can have at least two antennas. For example, an electronic device can have four or six antennas, etc. This application does not limit the number of antennas installed in an electronic device.

[0101] Taking radio frequency devices as combiners as an example, a large number of combiners need to be set in the radio frequency front-end module 230 of the electronic device to meet the combining requirements of radio frequency signals of different frequency bands in the radio frequency front-end module 230, so that radio frequency signals of different frequency bands can share the same antenna.

[0102] The original combiner was customized with corresponding isolator specifications. Furthermore, the isolation specifications of the original combiner can meet the isolation requirements of some electronic devices, so the original combiner can be used directly in these electronic devices.

[0103] In other electronic devices, the isolation requirements for combiners are relatively high, making it impossible for the original combiner's isolation specifications to meet these requirements. Furthermore, because combiners themselves have high passband performance requirements, with both passband and stopband bandwidths being relatively wide, the original combiner's isolation performance is poor at certain frequency points for electronic devices with high combiner isolation requirements, thus introducing interference problems in coexistence scenarios.

[0104] For example, for a certain type of electronic device, it is necessary to use a combiner to combine the radio frequency signal of the N78 band (or N79 band) and the radio frequency signal of the WIFI-5G band into a single radio frequency signal, and then transmit the radio frequency signal through the same antenna. In the scenario where the radio frequency signal of the N78 band (or N79 band) and the radio frequency signal of the WIFI-5G band coexist, the original combiner's insufficient isolation will lead to interference problems in the coexistence scenario.

[0105] For example, another type of electronic device needs to use a combiner to combine middle frequency band (MB) and high frequency band (HB) radio frequency (RF) signals into a single RF signal, which is then transmitted through the same antenna. In scenarios where MB and HB RF signals coexist, insufficient isolation in the original combiner can lead to interference problems. Taking N41 band RF signals as a high-frequency RF signal as an example, insufficient transmit / receive isolation in the E-UTRAN new radio-dual connectivity (ENDC) will affect the receiving sensitivity of the N41 band RF signal.

[0106] In the first related technology, for electronic devices with high isolation requirements for combiners, in order to reduce or even prevent coexistence interference problems, the original combiner can be used in these electronic devices, and a filter can be added at a certain port of the combiner to improve the isolation between the radio frequency signals transmitted on the two channels of the combiner, so as to solve the problem of low out-of-band rejection.

[0107] For example, such as Figure 3 As shown, the combiner 30 may include PORT1, PORT2, and PORT3. The channel between PORT1 and PORT3 is used to transmit radio frequency signals of a first frequency band, and the channel between PORT1 and PORT2 is used to transmit radio frequency signals of a second frequency band. For example, the first frequency band may be the WIFI-5G band, and the second frequency band may be the N78 band.

[0108] A filter 40 is added at the PORT3 port of the combiner 30 to improve the isolation between the radio frequency signals transmitted on the two channels of the combiner 30, that is, to improve the isolation between the radio frequency signals of the first frequency band and the radio frequency signals of the second frequency band.

[0109] However, when a filter 40 is added to the port of combiner 30, the insertion loss of filter 40 will be superimposed on the insertion loss of combiner 30 itself, resulting in an increase in the passband insertion loss of combiner 30 with filter 40 added.

[0110] For example, Figure 4 for Figure 3 The diagram shows the insertion loss versus frequency response of the RF circuit. Figure 4 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. Specifically, curve S01 represents the relationship between insertion loss and frequency for the channel between ports PORT1 and PORT2 of combiner 30 itself (i.e., without adding filter 40 at port PORT3 of combiner 30); curve S02 represents the relationship between insertion loss and frequency for the channel between ports PORT1 and PORT3 of combiner 30 itself; and curve S03 represents... Figure 3 The curves shown represent the insertion loss versus frequency relationship between the channel between ports PORT1 and PORT2 in the RF circuit (i.e., with filter 40 added at port PORT3 of combiner 30); curve S04 represents... Figure 3 The curves showing the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 ports of the RF circuit are shown.

[0111] like Figure 4 As shown, at position m01, i.e., at a frequency of 2.690 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.166 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -41.640 dB. Figure 3 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.165dB. Figure 3 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -87.056dB.

[0112] like Figure 4As shown, at position m02, i.e., at a frequency of 3.300 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.241 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -36.309 dB. Figure 3 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.241dB. Figure 3 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -107.228dB.

[0113] like Figure 4 As shown, at position m03, i.e., at a frequency of 3.800GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.386dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -27.529dB. Figure 3 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.454dB. Figure 3 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -47.840dB.

[0114] like Figure 4 As shown, at position m04, i.e., at a frequency of 4.150GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.615dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -33.794dB. Figure 3 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.617dB. Figure 3 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -73.553dB.

[0115] like Figure 4 As shown, at position m05, i.e., at a frequency of 5.100GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -25.538dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.778dB. Figure 3 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -26.211 dB. Figure 3The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -1.957dB.

[0116] Therefore, it can be seen that after adding filter 40 at PORT3 of combiner 30, the passband insertion loss of the channel between PORT1 and PORT3 at a frequency of 5.100GHz will deteriorate from -0.778dB to -1.957dB, thereby increasing the passband insertion loss of combiner 30.

[0117] In the second related technology, for electronic devices with high isolation requirements for combiners, in order to reduce or even prevent coexistence interference problems, the original combiner can be used in these electronic devices, and a suppression network can be added at a certain port of the combiner to improve the isolation between the radio frequency signals transmitted on the two channels of the combiner, so as to suppress the corresponding frequency points.

[0118] For example, such as Figure 5 As shown, taking the suppression network as a notch filter as an example, a notch filter 50 is added at the PORT3 port of the combiner 30 to improve the isolation between the radio frequency signals transmitted on the two channels of the combiner 30.

[0119] The notch filter 50 may include two inductors (such as...) Figure 5 The inductors L01 and L02 shown) and two capacitors (as shown) Figure 5 The capacitors C01 and C02 shown, along with the inductor L03 and capacitor C03, are primarily used for impedance adjustment. In one possible configuration, the inductor L03 and capacitor C03 may be located within the notch filter 50; in another possible configuration, the inductor L03 and capacitor C03 may not be part of the notch filter 50.

[0120] However, when a notch filter 50 is added to the port of the combiner 30, the insertion loss of the notch filter 50 will be superimposed on the insertion loss of the combiner 30 itself, which will result in an increase in the passband insertion loss of the combiner 30 with the addition of the notch filter 50.

[0121] In the third related technology, a high-isolation combiner can be custom-designed. For electronic devices with high isolation requirements, this custom-designed high-isolation combiner can be used. For electronic devices with lower isolation requirements, the original combiner can be used. However, because a high-isolation combiner needs to be custom-designed, the cost is relatively high, thus increasing the cost of the electronic devices.

[0122] Therefore, for electronic devices with different isolation requirements for combiners, the relevant technologies cannot uniformly use the original combiners without significantly increasing costs or passband insertion losses, resulting in poor versatility of combiners in use.

[0123] Based on this, embodiments of this application can add a resonant network around the combiner. Through the interaction between the combiner and the resonant network, the combiner and the resonant network form a unified resonator. The interaction of multiple resonant structures within this unified resonator (including multiple resonant structures in the combiner and the resonant network) allows for multi-frequency resonance at the desired specific frequency. Simultaneously, since the entire resonator is a unified whole, the overall resonant point is altered, improving the performance at the corresponding frequency, such as optimizing insertion loss and increasing isolation at the corresponding frequency.

[0124] Therefore, for electronic devices with low isolation requirements for combiners, the existing combiner can be used directly. For electronic devices with high isolation requirements, there is no need to use a custom-made high-isolation combiner; instead, the existing combiner can be used, with a resonant network added around it. Through the existing combiner and the added resonant network, the isolation between the RF signals transmitted on the two channels of the combiner can be improved, with minimal increase in passband insertion loss. Furthermore, since a custom-made high-isolation combiner is not needed, the cost of the electronic device is not significantly increased. Therefore, electronic devices with different isolation requirements can use the existing combiner; that is, the same combiner can be used for different electronic devices, thus improving the versatility of combiner usage.

[0125] In the embodiments of this application, the resonant network may include at least one resonant structure, which may include at least one inductor and / or at least one capacitor. The resonant network has the characteristic of allowing signals of a certain frequency band to pass through while blocking signals of other frequency bands.

[0126] For ease of understanding, the different resonant networks added around the combiner in the embodiments of this application will be described in detail below.

[0127] For example, Figure 6 This is a schematic diagram of a first type of radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 6 As shown, the radio frequency circuit may include a combiner 30 and a resonant network 60.

[0128] The combiner 30 includes PORT1, PORT2, and PORT3. The channel between PORT1 and PORT3 is used to transmit radio frequency signals of the first frequency band, and the channel between PORT1 and PORT2 is used to transmit radio frequency signals of the second frequency band. The first and second frequency bands are different.

[0129] In this way, the radio frequency signal of the first frequency band enters the combiner 30 through the PORT3 port and the radio frequency signal of the second frequency band enters the combiner 30 together. They can then be combined within the combiner 30, and the combined radio frequency signal can be output through the PORT1 port.

[0130] It should be noted that the first frequency band can be either a Wi-Fi band or a cellular band, and the second frequency band can also be either a Wi-Fi band or a cellular band. Specifically, the Wi-Fi band can be either the Wi-Fi-5G band or the Wi-Fi-2.4G band.

[0131] Generally, wireless frequencies can be divided into multiple bands in ascending order. For example, cellular frequency bands can include low frequency bands (LB), mid frequency bands, and high frequency bands, with mid frequency band frequencies higher than low frequency band frequencies, and high frequency band frequencies higher than mid frequency band frequencies.

[0132] Thus, when both the first and second frequency bands are cellular frequency bands, the first frequency band can be a low-frequency band, mid-frequency band, or high-frequency band within the cellular frequency band, and the second frequency band can also be a low-frequency band, mid-frequency band, or high-frequency band within the cellular frequency band. This application does not further limit this, as long as the frequency range included in the first frequency band does not overlap with the frequency range included in the second frequency band.

[0133] It should be understood that the frequency ranges corresponding to low frequency band, mid frequency band, or high frequency band may be different in different division methods. The embodiments of this application do not specifically limit the frequency ranges corresponding to low frequency band, mid frequency band, or high frequency band.

[0134] exist Figure 6 In the illustrated radio frequency circuit, the first frequency band may include frequencies greater than those included in the second frequency band. For example, the first frequency band may be the WIFI-5G band, meaning the channel between PORT1 and PORT3 of the combiner 30 is used to transmit WIFI-5G band radio frequency signals; the second frequency band may be the N78 band, meaning the channel between PORT1 and PORT2 of the combiner 30 is used to transmit N78 band radio frequency signals, with the N78 band including a frequency range of approximately 3.3 GHz to 4.2 GHz.

[0135] like Figure 6As shown, the resonant network 60 is connected in parallel between the PORT1 port and the PORT3 port of the combiner 30. That is, the two ends of the resonant network 60 are electrically connected to the PORT1 port and the PORT3 port of the combiner 30, respectively. The resonant network 60 is used to form resonance with the combiner 30.

[0136] The resonant network 60 may include a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4, a fifth inductor L5, and a first capacitor C1.

[0137] The first terminal of the first inductor L1 is electrically connected to port PORT1. The second terminal of the first inductor L1 is electrically connected to the first terminal of the second inductor L2. The second terminal of the second inductor L2 is electrically connected to the first terminal of the third inductor L3. The second terminal of the third inductor L3 is electrically connected to port PORT3. The first terminal of the fourth inductor L4 is electrically connected to the second terminals of both the first and second inductors L1 and L2. The second terminal of the fourth inductor L4 is electrically connected to the first terminal of the fifth inductor L5. The second terminal of the fifth inductor L5 is electrically connected to the second terminals of both the second and third inductors L2 and L3. The first terminal of the first capacitor C1 is electrically connected to the second terminals of both the fourth and fifth inductors L4 and L5. The second terminal of the first capacitor C1 is electrically connected to ground (GND).

[0138] It should be understood that Figure 6 The resonant network 60 shown may include three resonant structures. For example, the first inductor L1, the fourth inductor L4 and the first capacitor C1 can form a resonant structure, the third inductor L3, the fifth inductor L5 and the first capacitor C1 can form a resonant structure, and the second inductor L2, the fourth inductor L4 and the fifth inductor L5 can also form a resonant structure.

[0139] The following is about Figure 6 The relationship between insertion loss and frequency in the RF circuit shown, and its effect on... Figure 6 The relationship between the isolation and frequency of the RF circuit shown is explained in detail.

[0140] For example, Figure 7 for Figure 6 The diagram shows the insertion loss versus frequency response of the RF circuit. Figure 7 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. Specifically, curve S11 represents the relationship between insertion loss and frequency for the channel between ports PORT1 and PORT2 of combiner 30 itself (i.e., without the resonant network 60 connected in parallel between ports PORT1 and PORT3 of combiner 30); curve S12 represents the relationship between insertion loss and frequency for the channel between ports PORT1 and PORT3 of combiner 30 itself; and curve S13 represents... Figure 6The curves shown in Figure S14 depict the insertion loss versus frequency relationship between the channel between ports PORT1 and PORT2 in the RF circuit (i.e., with a resonant network 60 connected in parallel between ports PORT1 and PORT3 of combiner 30); curve S14 represents... Figure 6 The curves showing the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 ports of the RF circuit are shown.

[0141] like Figure 7 As shown, at position m11, i.e., at a frequency of 2.690 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.166 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -41.640 dB. Figure 6 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.183dB. Figure 6 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -33.467dB.

[0142] like Figure 7 As shown, at position m12, i.e., at a frequency of 3.300GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.241dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -36.309dB. Figure 6 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.295dB. Figure 6 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -41.312dB.

[0143] like Figure 7 As shown, at position m13, i.e., at a frequency of 3.800GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.386dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -27.529dB. Figure 6 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.468dB. Figure 6 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -33.606dB.

[0144] like Figure 7As shown, at position m14, i.e., at a frequency of 4.150GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.615dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -33.794dB. Figure 6 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.688dB. Figure 6 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -43.390dB.

[0145] like Figure 7 As shown, at position m15, i.e., at a frequency of 5.100GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -25.538dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.778dB. Figure 6 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -26.569 dB. Figure 6 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -1.114dB.

[0146] Therefore, combining curves S12 and S14, it can be seen that the circuit is connected in parallel between ports PORT1 and PORT3 of the combiner 30. Figure 6 After the resonant network 60 shown, the resonant zero point corresponding to the channel between the PORT1 port and the PORT3 port of the combiner 30 can be adjusted from the vicinity of 3.0 GHz to the vicinity of 3.4 GHz.

[0147] For the passband corresponding to the first frequency band, a parallel connection is made between PORT1 and PORT3 ports of combiner 30. Figure 6 After the resonant network 60 shown, the passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 increases by about 0.4 dB, which is a relatively small impact. For example, at a frequency of 5.100 GHz, the passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 deteriorates from -0.778 dB to -1.114 dB, meaning the increase in passband insertion loss is less than 0.4 dB. In contrast, adding filter 40 at PORT3 of combiner 30 would result in a passband insertion loss of -1.957 dB. This embodiment of the application connects the filter 40 in parallel between PORT1 and PORT3 of combiner 30. Figure 6After the resonant network 60 shown, the passband insertion loss in the first frequency band can be improved by 0.7dB to 0.8dB, which is a significant improvement.

[0148] Furthermore, for the passband corresponding to the second frequency band, a parallel connection is made between PORT1 and PORT3 ports of combiner 30. Figure 6 After the resonant network 60 shown, the passband insertion loss corresponding to the channel between the PORT1 port and the PORT2 port of the combiner 30 increases by less than 0.1 dB.

[0149] For example, Figure 8 for Figure 6 The diagram shows the isolation versus frequency response of the RF circuit. (As shown...) Figure 8 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents isolation in dB. Curve S15 represents the relationship between isolation and frequency for the channel between PORT2 and PORT3 of the combiner 30; curve S16 represents... Figure 6 The curves showing the relationship between isolation and frequency for the channel between PORT2 and PORT3 ports of the RF circuit are shown.

[0150] like Figure 8 As shown, at position m16, i.e., at a frequency of 3.800 GHz, the isolation between PORT2 and PORT3 of combiner 30 is -28.315 dB. Figure 6 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -32.793dB.

[0151] Therefore, combining curves S15 and S16, it can be seen that the circuit is connected in parallel between ports PORT1 and PORT3 of the combiner 30. Figure 6 Following the resonant network 60 shown, the isolation between the first and second frequency band RF signals increases within the frequency range of 3.8 GHz to 4.2 GHz. For example, at a frequency of 3.800 GHz, the isolation increases by approximately 4.5 dB. This improves the isolation between the first and second frequency band RF signals, reduces mutual interference between them, and thus mitigates or even prevents coexistence interference.

[0152] For example, Figure 9 This is a schematic diagram of a second type of radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 9 As shown, the radio frequency circuit may include a combiner 30 and a resonant network 60.

[0153] The combiner 30 includes PORT1, PORT2, and PORT3. The channel between PORT1 and PORT3 is used to transmit radio frequency signals of the first frequency band, and the channel between PORT1 and PORT2 is used to transmit radio frequency signals of the second frequency band.

[0154] exist Figure 9 In the radio frequency circuit shown, the frequencies included in the first frequency band can be greater than those included in the second frequency band. For example, the first frequency band can be the WIFI-5G frequency band, that is, the channel between PORT1 and PORT3 of the combiner 30 is used to transmit WIFI-5G frequency band radio frequency signals; the second frequency band can be the N78 frequency band, that is, the channel between PORT1 and PORT2 of the combiner 30 is used to transmit N78 frequency band radio frequency signals.

[0155] like Figure 9 As shown, the resonant network 60 is connected in parallel between ports PORT1 and PORT3 of the combiner 30. The resonant network 60 is used to form resonance with the combiner 30. The resonant network 60 may include a sixth inductor L6, a seventh inductor L7, an eighth inductor L8, a ninth inductor L9, a second capacitor C2, and a third capacitor C3.

[0156] The first terminal of the sixth inductor L6 is electrically connected to the first terminal of the third capacitor C3 and the second terminal of the second capacitor C2. The second terminal of the sixth inductor L6 is electrically connected to the second terminal of the third capacitor C3 and the ground terminal GND. The first terminal of the seventh inductor L7 is electrically connected to port PORT1. The second terminal of the seventh inductor L7 is electrically connected to the first terminal of the eighth inductor L8. The second terminal of the eighth inductor L8 is electrically connected to port PORT3. The first terminal of the ninth inductor L9 is electrically connected to the first terminal of the seventh inductor L7 and port PORT1. The second terminal of the ninth inductor L9 is electrically connected to the second terminal of the eighth inductor L8 and port PORT3. The first terminal of the second capacitor C2 is electrically connected to the second terminal of the seventh inductor L7 and the first terminal of the eighth inductor L8. The second terminal of the second capacitor C2 is electrically connected to the first terminal of the third capacitor C3. The second terminal of the third capacitor C3 is electrically connected to the ground terminal GND.

[0157] The following is about Figure 9 The relationship between insertion loss and frequency in the RF circuit shown, and its effect on... Figure 9 The relationship between the isolation and frequency of the RF circuit shown is explained in detail.

[0158] For example, Figure 10 for Figure 9 The diagram shows the insertion loss versus frequency response of the RF circuit. Figure 10As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. Specifically, curve S21 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 of combiner 30; curve S22 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 of combiner 30; and curve S23 represents... Figure 9 The curves shown represent the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 ports in the RF circuit; curve S24 represents... Figure 9 The curves showing the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 ports of the RF circuit are shown.

[0159] like Figure 10 As shown, at position m21, i.e., at a frequency of 1.710 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.098 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -34.918 dB. Figure 9 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.203dB. Figure 9 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -19.788dB.

[0160] like Figure 10 As shown, at position m22, i.e., at a frequency of 3.300 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.241 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -36.309 dB. Figure 9 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.295dB. Figure 9 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -42.203dB.

[0161] like Figure 10 As shown, at position m23, i.e., at a frequency of 3.800GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.386dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -27.529dB. Figure 9 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.501dB. Figure 9 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -46.841dB.

[0162] like Figure 10 As shown, at position m24, i.e., at a frequency of 4.200GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.699dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -40.148dB. Figure 9 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.883dB. Figure 9 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -23.728dB.

[0163] like Figure 10 As shown, at position m25, i.e., at a frequency of 5.150GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -27.819dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.722dB. Figure 9 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -28.609 dB. Figure 9 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -1.575dB.

[0164] like Figure 10 As shown, at position m26, i.e., at a frequency of 5.850 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -24.807 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.544 dB. Figure 9 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -26.819 dB. Figure 9 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.856dB.

[0165] Therefore, it can be seen that for the passband corresponding to the first frequency band, the PORT1 and PORT3 ports of the combiner 30 are connected in parallel. Figure 9After the resonant network 60 shown, the passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 increases by less than 0.9 dB. For example, at a frequency of 5.150 GHz, the passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 deteriorates from -0.722 dB to -1.575 dB, i.e., the increase in passband insertion loss is less than 0.9 dB; at a frequency of 5.850 GHz, the passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 deteriorates from -0.544 dB to -0.856 dB, i.e., the increase in passband insertion loss is about 0.3 dB. Compared to adding a filter 40 at PORT3 of combiner 30, this embodiment connects the filter 40 in parallel between PORT1 and PORT3 of combiner 30. Figure 9 After the resonant network 60 shown, the increase in passband insertion loss in the first frequency band is relatively small.

[0166] Furthermore, for the passband corresponding to the second frequency band, a parallel connection is made between PORT1 and PORT3 ports of combiner 30. Figure 9 After the resonant network 60 shown, the passband insertion loss of the channel between PORT1 and PORT2 ports of the combiner 30 increases by about 0.1 dB.

[0167] For example, Figure 11 for Figure 9 The diagram shows the isolation versus frequency response of the RF circuit. (As shown...) Figure 11 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents isolation in dB. Curve S25 represents the relationship between isolation and frequency for the channel between PORT2 and PORT3 of the combiner 30; curve S26 represents... Figure 9 The curves showing the relationship between isolation and frequency for the channel between PORT2 and PORT3 ports of the RF circuit are shown.

[0168] like Figure 11 As shown, at position m27, i.e., at a frequency of 3.800 GHz, the isolation between the channels of PORT2 and PORT3 of the combiner 30 itself is -28.315 dB. Figure 9 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -50.702dB.

[0169] Therefore, combining curves S25 and S26, it can be seen that the circuit is connected in parallel between ports PORT1 and PORT3 of the combiner 30. Figure 9Following the resonant network 60 shown, the isolation between the RF signals of the first and second frequency bands increases within the frequency range corresponding to the second frequency band (e.g., 3.3 GHz to 4.2 GHz). For example, at a frequency of 3.800 GHz, the isolation increases by approximately 22 dB.

[0170] For example, Figure 12 This is a schematic diagram of a third type of radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 12 As shown, the radio frequency circuit may include a combiner 30 and a resonant network 60.

[0171] The combiner 30 includes PORT1, PORT2, and PORT3. The channel between PORT1 and PORT2 is used to transmit radio frequency signals of the first frequency band, and the channel between PORT1 and PORT3 is used to transmit radio frequency signals of the second frequency band.

[0172] exist Figure 12 In the illustrated RF circuit, the second frequency band can include frequencies greater than those included in the first frequency band. For example, the second frequency band can be a high-frequency band within the cellular band, meaning the channel between PORT1 and PORT3 of combiner 30 is used to transmit high-frequency cellular signals, such as cellular signals in the N41 band, which includes a frequency range of approximately 2.496 GHz to 2.690 GHz. The first frequency band can be a mid-frequency band within the cellular band, meaning the channel between PORT1 and PORT2 of combiner 30 is used to transmit mid-frequency cellular signals, such as cellular signals in the mid-frequency band, which includes a frequency range of approximately 1.71 GHz to 2.2 GHz.

[0173] like Figure 12 As shown, the resonant network 60 is connected in parallel between ports PORT1 and PORT2 of the combiner 30. That is, the two ends of the resonant network 60 are electrically connected to ports PORT1 and PORT2 of the combiner 30, respectively. The resonant network 60 is used to form a resonance with the combiner 30. The resonant network 60 includes a tenth inductor L10, an eleventh inductor L11, a twelfth inductor L12, a thirteenth inductor L13, a fourteenth inductor L14, and a fourth capacitor C4.

[0174] The first terminal of the tenth inductor L10 is electrically connected to port PORT1, and the second terminal of the tenth inductor L10 is electrically connected to the first terminal of the fourth capacitor C4. The first terminal of the eleventh inductor L11 is electrically connected to the second terminal of the fourth capacitor C4, and the second terminal of the eleventh inductor L11 is electrically connected to port PORT2. The first terminal of the twelfth inductor L12 is electrically connected to the second terminals of the tenth inductor L10 and the fourth capacitor C4, and the second terminal of the twelfth inductor L12 is electrically connected to the first terminal of the thirteenth inductor L13. The second terminal of the thirteenth inductor L13 is electrically connected to the first terminals of the eleventh inductor L11 and the fourth capacitor C4. The first terminal of the fourteenth inductor L14 is electrically connected to the second terminals of the twelfth inductor L12 and the thirteenth inductor L13, and the second terminal of the fourteenth inductor L14 is electrically connected to ground GND.

[0175] For example, Figure 13 for Figure 12 The diagram shows the insertion loss versus frequency response of the RF circuit. Figure 13 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. Specifically, curve S31 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 of combiner 30; curve S32 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 of combiner 30; and curve S33 represents... Figure 12 The curves shown represent the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 ports in the RF circuit; curve S34 represents... Figure 12 The curves showing the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 ports of the RF circuit are shown.

[0176] like Figure 13 As shown, at position m31, i.e., at a frequency of 1.970 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.627 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -15.039 dB. Figure 12 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.723dB. Figure 12 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -14.934dB.

[0177] like Figure 13As shown, at position m32, i.e., at a frequency of 2.200GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -1.312dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -22.796dB. Figure 12 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -1.429 dB. Figure 12 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -22.936dB.

[0178] like Figure 13 As shown, at position m33, i.e., at a frequency of 2.500GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -14.543dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.987dB. Figure 12 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -20.205dB. Figure 12 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.899dB.

[0179] like Figure 13 As shown, at position m34, i.e., at a frequency of 2.630 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -11.872 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.881 dB. Figure 12 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -21.123 dB. Figure 12 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.718dB.

[0180] like Figure 13 As shown, at position m35, i.e., at a frequency of 2.690GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -11.712dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.832dB. Figure 12 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -29.130 dB. Figure 12The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.700dB.

[0181] Therefore, it can be seen that for the passband corresponding to the second frequency band (such as the frequency range of 2.496GHz to 2.690GHz), the PORT1 port and PORT2 port of the combiner 30 are connected in parallel. Figure 12 After the resonant network 60 shown, due to the improved isolation, the passband insertion loss of the channel between the PORT1 port and the PORT3 port of the combiner 30 will be reduced by 0.1dB to 0.2dB.

[0182] Furthermore, for the passband corresponding to the first frequency band (e.g., the frequency range from 1.71 GHz to 2.2 GHz), the PORT1 and PORT2 ports of the combiner 30 are connected in parallel. Figure 12 After the resonant network 60 shown, the passband insertion loss of the channel between PORT1 and PORT2 ports of the combiner 30 increases by about 0.1 dB.

[0183] Furthermore, simulation analysis reveals that the circuit is connected in parallel between PORT1 and PORT2 ports of combiner 30. Figure 12 After the resonant network 60 shown, the isolation between the radio frequency signals of the first frequency band and the second frequency band can be increased by 6dB to 18dB within the frequency range corresponding to the second frequency band (e.g., 2.496GHz to 2.690GHz).

[0184] For example, Figure 14 This is a schematic diagram of a fourth type of radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 14 As shown, the radio frequency circuit may include a combiner 30 and a resonant network 60.

[0185] The combiner 30 includes PORT1, PORT2, and PORT3. The channel between PORT1 and PORT3 is used to transmit radio frequency signals of the first frequency band, and the channel between PORT1 and PORT2 is used to transmit radio frequency signals of the second frequency band.

[0186] exist Figure 14In the illustrated RF circuit, the frequencies included in the first frequency band can be greater than those included in the second frequency band. For example, the first frequency band can be the ultra-high band (UHB) in cellular bands, such as the Sub6G band, i.e., the channel between PORT1 and PORT3 of combiner 30 is used to transmit RF signals in the Sub6G band; the second frequency band can be the middle and high band (MHB), such as the Sub3G band, i.e., the channel between PORT1 and PORT2 of combiner 30 is used to transmit RF signals in the Sub3G band.

[0187] like Figure 14 As shown, the resonant network 60 is connected in parallel between ports PORT1 and PORT3 of the combiner 30. The resonant network 60 is used to form a resonance with the combiner 30. The resonant network 60 includes a fifteenth inductor L15, a sixteenth inductor L16, and a seventeenth inductor L17.

[0188] The first terminal of the fifteenth inductor L15 is electrically connected to port PORT1. The second terminal of the fifteenth inductor L15 is electrically connected to the first terminal of the sixteenth inductor L16. The second terminal of the sixteenth inductor L16 is electrically connected to port PORT3. The first terminal of the seventeenth inductor L17 is electrically connected to the first terminal of the sixteenth inductor L16 and the second terminal of the fifteenth inductor L15. The second terminal of the seventeenth inductor L17 is electrically connected to the second terminal of the sixteenth inductor L16 and port PORT3.

[0189] The following is about Figure 14 The relationship between insertion loss and frequency in the RF circuit shown, and its effect on... Figure 14 The relationship between the isolation and frequency of the RF circuit shown is explained in detail.

[0190] For example, Figure 15 for Figure 14 The diagram shows the insertion loss versus frequency response of the RF circuit. Figure 15 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. Specifically, curve S41 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 of combiner 30; curve S42 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 of combiner 30; and curve S43 represents... Figure 14 The curves shown represent the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 ports in the RF circuit; curve S44 represents... Figure 14 The curves showing the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 ports of the RF circuit are shown.

[0191] like Figure 15 As shown, at position m41, i.e., at a frequency of 1.850 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.286 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -16.410 dB. Figure 14 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.190dB. Figure 14 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -37.974dB.

[0192] like Figure 15 As shown, at position m42, i.e., at a frequency of 2.200GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.314dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -16.428dB. Figure 14 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.239dB. Figure 14 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -25.301dB.

[0193] like Figure 15 As shown, at position m43, i.e., at a frequency of 2.690 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.381 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -31.020 dB. Figure 14 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.383dB. Figure 14 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -31.501dB.

[0194] like Figure 15 As shown, at position m44, i.e., at a frequency of 3.300 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -29.509 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.604 dB. Figure 14 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -29.030 dB. Figure 14The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.622dB.

[0195] like Figure 15 As shown, at position m45, i.e., at a frequency of 3.540 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -18.040 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.434 dB. Figure 14 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -17.826 dB. Figure 14 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.456dB.

[0196] like Figure 15 As shown, at position m46, i.e., at a frequency of 3.780 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -16.438 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.399 dB. Figure 14 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -16.362 dB. Figure 14 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.414dB.

[0197] Therefore, it can be seen that for the passband corresponding to the first frequency band, the PORT1 and PORT3 ports of the combiner 30 are connected in parallel. Figure 14 After the resonant network 60 shown, the passband insertion loss corresponding to the channel between PORT1 and PORT3 ports of combiner 30 increases by less than 0.1 dB. Furthermore, for the passband corresponding to the second frequency band, parallel connection is made between PORT1 and PORT3 ports of combiner 30. Figure 14 After the resonant network 60 shown, the passband insertion loss of the channel between PORT1 and PORT2 ports of the combiner 30 will be reduced. This optimizes the passband insertion loss across the entire frequency band.

[0198] For example, Figure 16 for Figure 14 The diagram shows the isolation versus frequency response of the RF circuit. (As shown...) Figure 16As shown, the horizontal axis represents frequency in GHz; the vertical axis represents isolation in dB. Curve S45 represents the relationship between isolation and frequency for the channel between PORT2 and PORT3 of the combiner 30; curve S46 represents... Figure 14 The curves showing the relationship between isolation and frequency for the channel between PORT2 and PORT3 ports of the RF circuit are shown.

[0199] like Figure 16 As shown, at position m47, i.e., at a frequency of 1.930 GHz, the isolation between PORT2 and PORT3 of combiner 30 is -15.498 dB. Figure 14 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -37.276 dB.

[0200] like Figure 16 As shown, at position m48, i.e., at a frequency of 2.620 GHz, the isolation between PORT2 and PORT3 of combiner 30 is -23.342 dB. Figure 14 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -35.300dB.

[0201] like Figure 16 As shown, at position m49, i.e., at a frequency of 3.350 GHz, the isolation between PORT2 and PORT3 of combiner 30 is -29.842 dB. Figure 14 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -29.860 dB.

[0202] Therefore, combining curves S45 and S46, it can be seen that the circuit is connected in parallel between ports PORT1 and PORT3 of combiner 30. Figure 14 Following the resonant network 60 shown, the isolation between the RF signals of the first and second frequency bands is increased within the frequency range corresponding to the second frequency band. For example, the isolation increases by approximately 22 dB at a frequency of 1.930 GHz and by approximately 12 dB at a frequency of 2.620 GHz.

[0203] For example, Figure 17 This is a schematic diagram of a fifth type of radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 17 As shown, the radio frequency circuit may include a combiner 30 and a resonant network 60.

[0204] The combiner 30 includes PORT1, PORT2, and PORT3. The channel between PORT1 and PORT2 is used to transmit radio frequency signals of the first frequency band, and the channel between PORT1 and PORT3 is used to transmit radio frequency signals of the second frequency band.

[0205] exist Figure 17 In the radio frequency circuit shown, the frequencies included in the second frequency band can be greater than those included in the first frequency band.

[0206] like Figure 17 As shown, the resonant network 60 is connected in parallel between ports PORT1 and PORT2 of the combiner 30. The resonant network 60 is used to form resonance with the combiner 30. The resonant network 60 includes an eighteenth inductor L18, a nineteenth inductor L19, a twentieth inductor L20, a twenty-first inductor L21, a fifth capacitor C5, and a sixth capacitor C6.

[0207] The first terminal of the eighteenth inductor L18 is electrically connected to port PORT1, and the second terminal of the eighteenth inductor L18 is electrically connected to port PORT2. The first terminal of the nineteenth inductor L19 is electrically connected to the first terminal of the eighteenth inductor L18 and port PORT1, and the second terminal of the nineteenth inductor L19 is electrically connected to the first terminal of the twentieth inductor L20. The second terminal of the twentieth inductor L20 is electrically connected to the second terminal of the eighteenth inductor L18 and port PORT2. The first terminal of the twenty-first inductor L21 is electrically connected to ground (GND), and the second terminal of the twenty-first inductor L21 is electrically connected to the second terminals of the eighteenth inductor L18, the twentieth inductor L20, and port PORT2. The first terminal of the fifth capacitor C5 is electrically connected to the first terminal of the twenty-first inductor L21 and ground (GND), and the second terminal of the fifth capacitor C5 is electrically connected to the first terminal of the sixth capacitor C6. The second terminal of the sixth capacitor C6 is electrically connected to the second terminals of the eighteenth inductor L18, the twentieth inductor L20, the twenty-first inductor L21, and port PORT2.

[0208] The following is about Figure 17 The relationship between insertion loss and frequency in the RF circuit shown, and its effect on... Figure 17 The relationship between the isolation and frequency of the RF circuit shown is explained in detail.

[0209] For example, Figure 18 for Figure 17 The diagram shows the insertion loss versus frequency response of the RF circuit. Figure 18As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. Specifically, curve S51 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 of combiner 30; curve S52 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 of combiner 30; and curve S53 represents... Figure 17 The curves shown represent the insertion loss versus frequency of the channel between PORT1 and PORT2 in the RF circuit; the S54 curve represents... Figure 17 The curves showing the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 ports of the RF circuit are shown.

[0210] like Figure 18 As shown, at position m51, i.e., at a frequency of 3.300GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.241dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -36.309dB. Figure 17 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.319dB. Figure 17 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -59.346dB.

[0211] like Figure 18 As shown, at position m52, i.e., at a frequency of 5.170GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -28.635dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.705dB. Figure 17 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -28.290 dB. Figure 17 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -1.371dB.

[0212] Therefore, it can be seen that for the passband corresponding to the first frequency band, the PORT1 and PORT2 ports of the combiner 30 are connected in parallel. Figure 17 After the resonant network 60 shown, the passband insertion loss corresponding to the channel between PORT1 and PORT2 ports of combiner 30 increases by less than 0.1 dB. For example, at a frequency of 3.300 GHz, the insertion loss corresponding to the channel between PORT1 and PORT2 ports of combiner 30 deteriorates from -0.241 dB to -0.319 dB.

[0213] Furthermore, for the passband corresponding to the second frequency band, a parallel connection is made between PORT1 and PORT2 ports of the combiner 30. Figure 17 After the resonant network 60 shown, the passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 increases by about 0.6 dB, which is a relatively small effect. For example, at a frequency of 5.170 GHz, the passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 will deteriorate from -0.705 dB to -1.371 dB.

[0214] For example, Figure 19 for Figure 17 The diagram shows the isolation versus frequency response of the RF circuit. (As shown...) Figure 19 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents isolation in dB. Curve S55 represents the relationship between isolation and frequency for the channel between PORT2 and PORT3 of the combiner 30; curve S56 represents... Figure 17 The curves showing the relationship between isolation and frequency for the channel between PORT2 and PORT3 ports of the RF circuit are shown.

[0215] like Figure 19 As shown, at position m53, i.e., at a frequency of 3.300GHz, the isolation between the channels of PORT2 and PORT3 of the combiner 30 itself is -37.317dB. Figure 17 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -58.336 dB.

[0216] like Figure 19 As shown, at position m54, i.e., at a frequency of 5.170 GHz, the isolation between PORT2 and PORT3 of combiner 30 is -33.069 dB. Figure 17 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -33.210dB.

[0217] Therefore, it can be seen that the PORT1 and PORT2 ports of the combiner 30 are connected in parallel. Figure 17 After the resonant network 60 shown, the isolation between the radio frequency signals of the first frequency band and the second frequency band increases within the range corresponding to the second frequency band.

[0218] For example, Figure 20 This is a schematic diagram of a sixth type of radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 20 As shown, the radio frequency circuit may include a combiner 30 and a resonant network 60.

[0219] The combiner 30 includes PORT1, PORT2, and PORT3. The channel between PORT1 and PORT3 is used to transmit radio frequency signals of the first frequency band, and the channel between PORT1 and PORT2 is used to transmit radio frequency signals of the second frequency band.

[0220] exist Figure 20 In the radio frequency circuit shown, the frequencies included in the first frequency band can be greater than the frequencies included in the second frequency band.

[0221] like Figure 20 As shown, the resonant network 60 is connected in parallel between ports PORT1 and PORT3 of the combiner 30. The resonant network 60 is used to form resonance with the combiner 30. The resonant network 60 includes the twenty-second inductor L22, the twenty-third inductor L23, the twenty-fourth inductor L24, the twenty-fifth inductor L25, the seventh capacitor C7, and the eighth capacitor C8.

[0222] The first terminal of the 22nd inductor L22 is electrically connected to the first terminal of the 7th capacitor C7, and the second terminal of the 22nd inductor L22 is electrically connected to the second terminal of the 8th capacitor C8. The first terminal of the 23rd inductor L23 is electrically connected to port PORT1, and the second terminal of the 23rd inductor L23 is electrically connected to the first terminals of the 24th inductor L24, the 22nd inductor L22, and the 7th capacitor C7. The second terminal of the 24th inductor L24 is electrically connected to port PORT3. The first terminal of the 25th inductor L25 is electrically connected to the first terminal of the 23rd inductor L23 and port PORT1, and the second terminal of the 25th inductor L25 is electrically connected to the second terminal of the 24th inductor L24 and port PORT3. The first terminal of the 7th capacitor C7 is electrically connected to the second terminals of the 23rd inductor L23 and the 24th inductor L24, and the second terminal of the 7th capacitor C7 is electrically connected to the first terminal of the 8th capacitor C8. The second terminal of the 8th capacitor C8 is electrically connected to ground (GND).

[0223] It can be seen that the PORT1 and PORT3 ports of the combiner 30 are connected in parallel. Figure 20 After the resonant network 60 shown, for the passband corresponding to the first frequency band, the increase in passband insertion loss of the channel between PORT1 and PORT3 of combiner 30 is relatively small; for the passband corresponding to the second frequency band, the increase in passband insertion loss of the channel between PORT1 and PORT2 of combiner 30 is also relatively small.

[0224] Additionally, a parallel connection is made between ports PORT1 and PORT3 of the combiner 30. Figure 20 After the resonant network 60 shown, the isolation between the radio frequency signals of the first frequency band and the radio frequency signals of the second frequency band is increased within the frequency range corresponding to the second frequency band.

[0225] For example, Figure 21 This is a schematic diagram of a seventh radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 21 As shown, the radio frequency circuit may include a combiner 30 and a resonant network 60.

[0226] The combiner 30 includes PORT1, PORT2, and PORT3. The channel between PORT1 and PORT3 is used to transmit radio frequency signals of the first frequency band, and the channel between PORT1 and PORT2 is used to transmit radio frequency signals of the second frequency band.

[0227] exist Figure 21 In the RF circuit shown, the first frequency band may include frequencies greater than those included in the second frequency band. For example, the first frequency band may be a Sub6G frequency band, meaning the channel between PORT1 and PORT3 of the combiner 30 is used to transmit Sub6G frequency band RF signals; the second frequency band may be a Sub3G frequency band, meaning the channel between PORT1 and PORT2 of the combiner 30 is used to transmit Sub3G frequency band RF signals.

[0228] like Figure 21 As shown, the resonant network 60 is connected in parallel between ports PORT1 and PORT3 of the combiner 30. The resonant network 60 is used to form resonance with the combiner 30. The resonant network 60 includes the twenty-sixth inductor L26, the twenty-seventh inductor L27, the ninth capacitor C9, the tenth capacitor C10, and the eleventh capacitor C11.

[0229] The first terminal of the 26th inductor L26 is electrically connected to port PORT1. The second terminal of the 26th inductor L26 is electrically connected to the first terminal of the 9th capacitor C9. The second terminal of the 9th capacitor C9 is electrically connected to the first terminal of the 10th capacitor C10. The second terminal of the 10th capacitor C10 is electrically connected to port PORT3. The first terminal of the 11th capacitor C11 is electrically connected to the first terminal of the 9th capacitor C9 and the second terminal of the 26th inductor L26. The second terminal of the 11th capacitor C11 is electrically connected to the first terminal of the 27th inductor L27. The second terminal of the 27th inductor L27 is electrically connected to the second terminal of the 9th capacitor C9 and the first terminal of the 10th capacitor C10.

[0230] The following is about Figure 21 The relationship between insertion loss and frequency in the RF circuit shown, and its effect on... Figure 21The relationship between the isolation and frequency of the RF circuit shown is explained in detail.

[0231] For example, Figure 22 for Figure 21 The diagram shows the insertion loss versus frequency response of the RF circuit. Figure 22 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. Specifically, curve S71 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT2 of combiner 30; curve S72 represents the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 of combiner 30; and curve S73 represents... Figure 21 The curves shown represent the insertion loss versus frequency relationship between the channel between PORT1 and PORT2 ports in the RF circuit; curve S74 represents... Figure 21 The curves showing the relationship between insertion loss and frequency for the channel between PORT1 and PORT3 ports of the RF circuit are shown.

[0232] like Figure 22 As shown, at position m71, i.e., at a frequency of 1.930 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.210 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -16.273 dB. Figure 21 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.222dB. Figure 21 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -38.080dB.

[0233] like Figure 22 As shown, at position m72, i.e., at a frequency of 2.620 GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -0.381 dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -23.256 dB. Figure 21 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -0.333dB. Figure 21 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -35.605dB.

[0234] like Figure 22As shown, at position m73, i.e., at a frequency of 3.350GHz, the insertion loss of the channel between PORT1 and PORT2 of combiner 30 itself is -29.509dB, and the insertion loss of the channel between PORT1 and PORT3 of combiner 30 itself is -0.504dB. Figure 21 The insertion loss of the channel between PORT1 and PORT2 in the RF circuit shown is -29.515dB. Figure 21 The insertion loss of the channel between PORT1 and PORT3 of the RF circuit shown is -0.543dB.

[0235] Therefore, combining curves S72 and S74, it can be seen that the circuit is connected in parallel between ports PORT1 and PORT3 of the combiner 30. Figure 21 Following the resonant network 60 shown, for the passband corresponding to the first frequency band, the increase in passband insertion loss between ports PORT1 and PORT3 of combiner 30 is relatively small. Furthermore, combining curves S71 and S73, it can be seen that for the passband corresponding to the second frequency band, the increase in passband insertion loss between ports PORT1 and PORT2 of combiner 30 is also relatively small.

[0236] For example, Figure 23 for Figure 21 The diagram shows the isolation versus frequency response of the RF circuit. (As shown...) Figure 23 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents isolation in dB. Curve S75 represents the relationship between isolation and frequency for the channel between PORT2 and PORT3 of the combiner 30; curve S76 represents... Figure 21 The curves showing the relationship between isolation and frequency for the channel between PORT2 and PORT3 ports of the RF circuit are shown.

[0237] like Figure 23 As shown, at position m74, i.e., at a frequency of 1.930 GHz, the isolation between the channels of PORT2 and PORT3 of the combiner 30 itself is -15.498 dB. Figure 21 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -37.276 dB.

[0238] like Figure 23 As shown, at position m75, i.e., at a frequency of 2.620 GHz, the isolation between PORT2 and PORT3 of combiner 30 is -23.342 dB. Figure 21The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -35.300dB.

[0239] like Figure 23 As shown, at position m76, i.e., at a frequency of 3.350GHz, the isolation between PORT2 and PORT3 of combiner 30 is -29.842dB. Figure 21 The isolation between the PORT2 and PORT3 ports of the RF circuit shown is -29.860 dB.

[0240] Therefore, combining curves S75 and S76, it can be seen that the circuit is connected in parallel between ports PORT1 and PORT3 of combiner 30. Figure 21 Following the resonant network 60 shown, the isolation between the RF signals of the first and second frequency bands is increased within the frequency range corresponding to the second frequency band. For example, the isolation increases by approximately 22 dB at a frequency of 1.930 GHz and by approximately 12 dB at a frequency of 2.620 GHz.

[0241] In summary, the above Figure 6 , Figure 9 , Figure 12 , Figure 14 , Figure 17 , Figure 20 as well as Figure 21 The illustrated RF circuit shows the addition of different resonant networks 60 around the original combiner 30. By forming resonance between the combiner 30 and the resonant network 60, the insertion loss at the corresponding frequency point can be optimized and the isolation at the corresponding frequency point can be increased. In this way, the original combiner can be used for electronic devices with different isolation requirements, that is, the same combiner can be used for different electronic devices, thereby improving the versatility of the combiner and reducing the implementation cost.

[0242] Taking radio frequency devices as filters as an example, filters need to be set in the radio frequency front-end module 230 of electronic devices. The filters include PORT4 and PORT5 ports. The channel between PORT4 and PORT5 ports is used to transmit radio frequency signals of the first frequency band. The filters are used to filter out signals other than radio frequency signals of the first frequency band in the channel between PORT4 and PORT5 ports.

[0243] While filters from different manufacturers may have the same package size, their passband impedance varies. Passband impedance refers to the impedance characteristics exhibited by the filter within its passband frequency range. Therefore, filters from different manufacturers cannot be used arbitrarily on the same type of electronic device, resulting in poor versatility in filter usage.

[0244] Based on this, the embodiments of this application can add a resonant network around the filter. Through the mutual influence between the filter and the resonant network, the filter and the resonant network form an integral resonator. The mutual influence of multiple resonant structures in the entire resonator (such as multiple resonant structures in the filter and multiple resonant structures in the resonant network) forms multi-frequency resonance at the required specific frequency point, thereby improving the internal filtering characteristics of the filter itself.

[0245] By adding identical resonant networks around filters from different manufacturers, the passband impedance of filters from different manufacturers becomes more consistent, increasing the uniformity of filters from different manufacturers. This allows filters from different manufacturers to be used freely on the same type of electronic equipment, improving the versatility of the filters. Furthermore, adding identical resonant networks around filters from different manufacturers results in relatively small increases in passband insertion loss, without significantly increasing the cost of the electronic equipment.

[0246] For ease of understanding, the different resonant networks added to the periphery of the filter in the embodiments of this application will be described in detail below.

[0247] For example, Figure 24 This is a schematic diagram of an eighth radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 24 As shown, the radio frequency circuit may include a filter 40 and a resonant network 60.

[0248] The filter 40 includes PORT4 and PORT5 ports. The channel between PORT4 and PORT5 ports is used to transmit radio frequency signals in the first frequency band.

[0249] like Figure 24 As shown, the resonant network 60 is connected in parallel between ports PORT4 and PORT5 of the filter 40. That is, both ends of the resonant network 60 are electrically connected to ports PORT4 and PORT5 of the filter 40, respectively. The resonant network 60 is used to form resonance with the filter 40. The resonant network 60 includes the twenty-eighth inductor L28, the twenty-ninth inductor L29, the thirtieth inductor L30, the thirty-first inductor L31, the thirty-second inductor L32, the thirty-third inductor L33, the twelfth capacitor C12, and the thirteenth capacitor C13.

[0250] The first terminal of the 28th inductor L28 is electrically connected to port PORT4. The second terminal of the 28th inductor L28 is electrically connected to the first terminal of the 12th capacitor C12. The second terminal of the 12th capacitor C12 is electrically connected to the first terminal of the 30th inductor L30. The first terminal of the 29th inductor L29 is electrically connected to the first terminals of the 12th capacitor C12 and the 28th inductor L28. The second terminal of the 29th inductor L29 is electrically connected to the first terminal of the 13th capacitor C13. The second terminal of the 13th capacitor C13 is electrically connected to the first terminals of the 30th inductor L30 and the 12th capacitor C12. The second terminal of the 30th inductor L30 is electrically connected to port PORT5. The first terminal of the 31st inductor L31 is electrically connected to the second terminals of the 28th inductor L28, the 12th capacitor C12, and the 29th inductor L29. The second terminal of the 31st inductor L31 is electrically connected to ground (GND). The first terminal of the 32nd inductor L32 is electrically connected to the first terminal of the 30th inductor L30, the second terminal of the 13th capacitor C13, and the second terminal of the 12th capacitor C12. The second terminal of the 32nd inductor L32 is electrically connected to the ground terminal GND. The first terminal of the 33rd inductor L33 is electrically connected to the second terminal of the 30th inductor L30 and the PORT5 port. The second terminal of the 33rd inductor L33 is electrically connected to the ground terminal GND.

[0251] The following is about Figure 24 The relationship between insertion loss and frequency in the RF circuit shown, and its effect on... Figure 24 The passband impedance of the RF circuit shown will be explained in detail.

[0252] For example, Figure 25 To ensure that the two ends of different filters are not connected in parallel Figure 24 The resonant network in the filter, and the parallel connection at both ends of different filters. Figure 24 The corresponding insertion loss versus frequency response diagram is shown after the resonant network in the diagram. For example... Figure 25 As shown, the horizontal axis represents frequency in GHz; the vertical axis represents insertion loss in dB. The S81 curve represents the parallel connection across the first type of filter. Figure 24 The curves showing the insertion loss versus frequency of the channel between ports PORT4 and PORT5 after the resonant network 60 are shown; the S82 curve represents the parallel connection at both ends of the second type of filter. Figure 24 The curves showing the insertion loss versus frequency of the channel between ports PORT4 and PORT5 after the resonant network 60 are shown; the S83 curve represents the parallel connection at both ends of the third type of filter. Figure 24The curves showing the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 after the resonant network 60 are shown; curve S84 shows the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 of the first type of filter; curve S85 shows the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 of the second type of filter; and curve S86 shows the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 of the third type of filter.

[0253] It should be understood that the first, second, and third filters can be filters manufactured by different companies.

[0254] like Figure 25 As shown, at position m81, i.e., at a frequency of 2.500 GHz, the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the first type of filter is -1.990 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the second type of filter is -1.901 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the third type of filter is -2.138 dB; the insertion loss of the channel between PORT4 and PORT5 of the first type of filter itself is -2.276 dB; the insertion loss of the channel between PORT4 and PORT5 of the second type of filter itself is -2.087 dB; and the insertion loss of the channel between PORT4 and PORT5 of the third type of filter itself is -2.050 dB.

[0255] like Figure 25 As shown, at position m82, i.e., at a frequency of 2.515 GHz, the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the first type of filter is -1.811 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the second type of filter is -1.752 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the third type of filter is -1.788 dB; the insertion loss of the channel between PORT4 and PORT5 of the first type of filter itself is -1.897 dB; the insertion loss of the channel between PORT4 and PORT5 of the second type of filter itself is -1.892 dB; and the insertion loss of the channel between PORT4 and PORT5 of the third type of filter itself is -1.705 dB.

[0256] like Figure 25 As shown, at position m83, i.e., at a frequency of 2.590 GHz, the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the first type of filter is -1.139 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the second type of filter is -1.618 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the third type of filter is -1.154 dB; the insertion loss of the channel between PORT4 and PORT5 of the first type of filter itself is -1.294 dB; the insertion loss of the channel between PORT4 and PORT5 of the second type of filter itself is -1.202 dB; and the insertion loss of the channel between PORT4 and PORT5 of the third type of filter itself is -1.849 dB.

[0257] like Figure 25 As shown, at position m84, i.e., at a frequency of 2.675GHz, the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the first type of filter is -1.507dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the second type of filter is -1.755dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the third type of filter is -1.619dB; the insertion loss of the channel between PORT4 and PORT5 of the first type of filter itself is -1.723dB; the insertion loss of the channel between PORT4 and PORT5 of the second type of filter itself is -1.607dB; and the insertion loss of the channel between PORT4 and PORT5 of the third type of filter itself is -1.790dB.

[0258] like Figure 25As shown, at position m85, i.e., at a frequency of 2.690 GHz, the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the first type of filter is -2.049 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the second type of filter is -2.479 dB; the insertion loss of the channel between PORT4 and PORT5 after the parallel resonant network 60 is connected across the two ends of the third type of filter is -2.014 dB; the insertion loss of the channel between PORT4 and PORT5 of the first type of filter itself is -1.995 dB; the insertion loss of the channel between PORT4 and PORT5 of the second type of filter itself is -2.039 dB; and the insertion loss of the channel between PORT4 and PORT5 of the third type of filter itself is -2.481 dB.

[0259] Therefore, it can be seen that parallel connection at both ends of different filters Figure 24 After the resonant network 60 shown, the passband insertion loss of the channel between the PORT4 and PORT5 ports of the filter 40 increases relatively little, and even decreases at some frequency points.

[0260] For example, Figure 26 To ensure that the two ends of different filters are not connected in parallel Figure 24 The resonant network in the filter, and the parallel connection at both ends of different filters. Figure 24 The diagram shows the position of the corresponding impedance on the Smith chart after the resonant network in the filter. The filter operates at frequencies from 2.500 GHz to 2.690 GHz.

[0261] like Figure 26 As shown in (a), it illustrates the situation where the three different filters are not connected in parallel at both ends. Figure 24 The diagram shows the position of the impedance of the resonant network in the Smith chart. Specifically, curve S871 represents the position of the impedance of the first type of filter in the Smith chart, curve S881 represents the position of the impedance of the second type of filter in the Smith chart, and curve S891 represents the position of the impedance of the third type of filter in the Smith chart.

[0262] like Figure 26 As shown in (b), it illustrates the parallel connection across three different filters. Figure 24 The diagram shows the position of the corresponding impedance on the Smith chart after the resonant network in the first type of filter. Specifically, the S872 curve represents the parallel connection across the two ends of the first type of filter. Figure 24 The impedance of the resonant network 60 shown is located on the Smith chart, and the S882 curve represents the parallel connection across the two ends of the second type of filter. Figure 24 The impedance of the resonant network 60 shown is located on the Smith chart, and the S892 curve represents the parallel connection across the third type of filter. Figure 24 The impedance of the resonant network 60 shown is located on the Smith chart.

[0263] like Figure 26 As shown in (a) and (b), the Smith chart includes resistance lines, impedance circles, and reactance arcs. Multiple tangent circles are impedance circles; the resistance lines form the horizontal axis; the left intersection of the largest impedance circle with the resistance line is the short-circuit point, the right intersection with the resistance line is the open-circuit point, and the center of the circle is the matching point; the arcs radiating from the open-circuit point to the circumference are reactance arcs.

[0264] In the Smith chart, each point represents a complex impedance value, where impedance refers to the ability of a circuit to impede a point, consisting of real resistance and imaginary reactance. The impedance circle is a line with equal real parts, also called a line of equal resistance, where the resistance is equal at all points. The resistance line and reactance arc are lines with equal imaginary parts, also called lines of equal reactance, where the reactance at all points is neither positive nor negative. The portion above the resistance line is called the inductive region, where the reactance at all points is positive; the portion below the resistance line is called the capacitive region, where the reactance at all points is negative.

[0265] Furthermore, the Smith chart includes multiple admittance circles (not shown in the figure) and susceptance arcs (not shown in the figure). The conductance is equal at all points on each admittance circle; the susceptance is equal at all points on each susceptance arc. The Smith chart is commonly used for impedance matching between resonant structures. Impedance matching means that the input impedance and output impedance are approximately equal and opposite in direction. This allows the resonant structure to operate normally with high efficiency. Impedance mismatch between resonant structures will lead to low efficiency, and in severe cases, may even cause malfunctions or burnout. The process of impedance matching using the Smith chart involves determining the matching circuit and connection method to pull the resonant structure from the impedance point at a certain frequency to the matching point, based on the matching point and the impedance point of the resonant structure at that frequency.

[0266] Therefore, it can be seen that filters from different manufacturers are connected in parallel across their terminals. Figure 24 After the resonant network 60 in the diagram, the corresponding impedance on the Smith chart converges more, meaning that the passband impedance of filters from different manufacturers is more consistent. For example, connecting filters from different manufacturers in parallel... Figure 24 After the resonant network in the middle, the corresponding passband impedance can be close to 50 ohms.

[0267] For example, Figure 27 This is a schematic diagram of a ninth type of radio frequency (RF) circuit provided in an embodiment of this application. This RF circuit can be located in the RF front-end module 230. For example... Figure 27 As shown, the radio frequency circuit may include a filter 40 and a resonant network 60.

[0268] The filter 40 includes PORT4 and PORT5 ports. The channel between PORT4 and PORT5 ports is used to transmit radio frequency signals in the first frequency band.

[0269] like Figure 27 As shown, the resonant network 60 is connected in parallel between ports PORT4 and PORT5 of the filter 40, and is used to form resonance with the filter 40. The resonant network 60 includes the thirty-fourth inductor L34, the thirty-fifth inductor L35, the thirty-sixth inductor L36, the thirty-seventh inductor L37, the fourteenth capacitor C14, and the fifteenth capacitor C15.

[0270] The first terminal of the 34th inductor L34 is electrically connected to port PORT4, and the second terminal of the 34th inductor L34 is electrically connected to the first terminal of the 14th capacitor C14. The second terminal of the 14th capacitor C14 is electrically connected to the first terminal of the 36th inductor L36. The first terminal of the 35th inductor L35 is electrically connected to the first terminal of the 14th capacitor C14 and the second terminal of the 34th inductor L34, and the second terminal of the 35th inductor L35 is electrically connected to the first terminal of the 36th inductor L36 and the second terminal of the 14th capacitor C14. The second terminal of the 36th inductor L36 is electrically connected to port PORT5. The first terminal of the 37th inductor L37 is electrically connected to the first terminal of the 36th inductor L36, the second terminal of the 14th capacitor C14, and the second terminal of the 35th inductor L35, and the second terminal of the 37th inductor L37 is electrically connected to ground (GND). The first terminal of the fifteenth capacitor C15 is electrically connected to the second terminal of the thirty-fourth inductor L34, the first terminal of the fourteenth capacitor C14, and the first terminal of the thirty-fifth inductor L35. The second terminal of the fifteenth capacitor C15 is electrically connected to the ground terminal GND.

[0271] For example, Figure 28 To ensure that the two ends of different filters are not connected in parallel Figure 27 The resonant network in the filter, and the parallel connection at both ends of different filters. Figure 27 The corresponding insertion loss versus frequency response diagram is shown after the resonant network in the diagram. For example... Figure 28 As shown in (a), (b), and (c), the horizontal axis represents frequency in GHz, and the vertical axis represents insertion loss in dB.

[0272] like Figure 28 As shown in (a), curve S91 represents the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 of the fourth type of filter itself, and curve S92 represents the parallel connection at both ends of the fourth type of filter. Figure 27The curves showing the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 after the resonant network 60 are shown.

[0273] like Figure 28 As shown in (b), curve S93 represents the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 of the fifth filter itself, and curve S94 represents the parallel connection at both ends of the fifth filter. Figure 27 The curves showing the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 after the resonant network 60 are shown.

[0274] like Figure 28 As shown in (c), curve S95 represents the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 of the sixth filter itself, and curve S96 represents the parallel connection at both ends of the sixth filter. Figure 27 The curves showing the relationship between insertion loss and frequency for the channel between PORT4 and PORT5 after the resonant network 60 are shown.

[0275] It should be understood that the fourth, fifth, and sixth filters can be filters manufactured by different companies.

[0276] At position m91, that is, at a frequency of 2.110 GHz, such as Figure 28 As shown in (a), the insertion loss of the channel between PORT4 and PORT5 of the fourth filter itself is -2.004 dB, while the insertion loss of the channel between PORT4 and PORT5 after the resonant network 60 is connected in parallel at both ends of the fourth filter is -1.688 dB; Figure 28 As shown in (b), the insertion loss of the channel between PORT4 and PORT5 of the fifth filter itself is -1.810 dB, while the insertion loss of the channel between PORT4 and PORT5 after connecting a resonant network 60 in parallel across the fifth filter is -1.409 dB; Figure 28 As shown in (c), the insertion loss of the channel between PORT4 and PORT5 of the sixth filter itself is -1.295dB, and the insertion loss of the channel between PORT4 and PORT5 after the resonant network 60 is connected in parallel at both ends of the sixth filter is -1.167dB.

[0277] At position m92, that is, at a frequency of 2.150GHz, such as Figure 28As shown in (a), the insertion loss of the channel between PORT4 and PORT5 of the fourth filter itself is -1.358 dB, and the insertion loss of the channel between PORT4 and PORT5 after the resonant network 60 is connected in parallel at both ends of the fourth filter is -1.325 dB; Figure 28 As shown in (b), the insertion loss of the channel between PORT4 and PORT5 of the fifth filter itself is -1.279 dB, while the insertion loss of the channel between PORT4 and PORT5 after connecting a resonant network 60 in parallel across the fifth filter is -1.196 dB; Figure 28 As shown in (c), the insertion loss of the channel between PORT4 and PORT5 of the sixth filter itself is -1.343dB, and the insertion loss of the channel between PORT4 and PORT5 after the resonant network 60 is connected in parallel at both ends of the sixth filter is -1.273dB.

[0278] At position m93, that is, at a frequency of 2.180 GHz, such as Figure 28 As shown in (a), the insertion loss of the channel between PORT4 and PORT5 of the fourth filter itself is -2.073dB, and the insertion loss of the channel between PORT4 and PORT5 after the resonant network 60 is connected in parallel at both ends of the fourth filter is -1.733dB; Figure 28 As shown in (b), the insertion loss of the channel between PORT4 and PORT5 of the fifth filter itself is -1.996 dB, while the insertion loss of the channel between PORT4 and PORT5 after connecting the resonant network 60 in parallel across the fifth filter is -1.626 dB; Figure 28 As shown in (c), the insertion loss of the channel between PORT4 and PORT5 of the sixth filter itself is -3.491dB, and the insertion loss of the channel between PORT4 and PORT5 after the resonant network 60 is connected in parallel at both ends of the sixth filter is -3.277dB.

[0279] Therefore, it can be seen that parallel connection at both ends of different filters Figure 27 After the resonant network 60 shown, the passband insertion loss of the channel between the PORT4 and PORT5 ports of the filter 40 increases relatively little, and even decreases at some frequency points.

[0280] Furthermore, filters from different manufacturers are connected in parallel across their ends. Figure 27 After the resonant network 60 in the diagram, the corresponding impedance on the Smith chart converges more, meaning that the passband impedance of filters from different manufacturers is more consistent.

[0281] In summary, this application provides a radio frequency (RF) circuit including an RF device and a resonant network 60. The RF device includes a first port and a second port, and a channel between the first port and the second port is used to transmit RF signals in a first frequency band; the resonant network 60 is connected in parallel between the first port and the second port, and the resonant network 60 is used to form resonance with the RF device.

[0282] In one scenario, the RF device functions as a combiner. Taking this example, the RF device also includes a third port. The channel between the first and third ports is used to transmit RF signals in a second frequency band, which is different from the first frequency band. The resonant network 60 is used to improve the isolation between the RF signals in the first and second frequency bands.

[0283] For example, in Figure 6 , Figure 9 , Figure 14 , Figure 20 as well as Figure 21 In the RF circuit shown, the RF device is combiner 30, with the first port being PORT1, the second port being PORT3, and the third port being PORT2. Figure 12 as well as Figure 17 In the RF circuit shown, the RF device is combiner 30, with the first port being PORT1, the second port being PORT2, and the third port being PORT3.

[0284] In another scenario, the radio frequency (RF) device is used as a filter. Taking an RF device as a filter as an example, the filter is used to filter out signals other than the RF signal in the first frequency band from the channel between the first port and the second port. The resonant network 60 is used to adjust the passband impedance of the filter.

[0285] For example, in Figure 24 and Figure 27 In the RF circuit shown, the RF device is filter 40, the first port is PORT4, and the second port is PORT5.

[0286] It is understandable that the aforementioned radio frequency devices, in addition to combiners or filters, can also be duplexers or multiplexers.

[0287] Taking a duplexer as an example, a resonant network can be connected in parallel between the input and output ports of the duplexer. This resonant network, resonating with the duplexer, improves the isolation between the two RF signals passing through the duplexer. Thus, for electronic devices with lower isolation requirements, the original duplexer can be used directly. For electronic devices with higher isolation requirements, the original duplexer can be used with an external resonant network, allowing the same duplexer to be used in different electronic devices, thereby improving its versatility.

[0288] Taking a multiplexer as an example, a resonant network can be connected in parallel between the input port and one output port of the multiplexer. This resonant network creates resonance with the multiplexer, thereby improving the isolation between the two RF signals passing through the multiplexer. In this way, for electronic devices with lower isolation requirements, the original multiplexer can be used directly. For electronic devices with higher isolation requirements, the original multiplexer can be used with an external resonant network added, allowing the same multiplexer to be used in different electronic devices, thus improving the versatility of the multiplexer.

[0289] Furthermore, in this embodiment, a resonant network can be added to the periphery of the RF device after its fabrication is complete, thereby improving its performance. If the RF device is still in the design phase, the resonant network can also be fabricated directly inside the RF device.

[0290] In the embodiments of this application, in the case of a resonant network connected in parallel between the first port and the second port of the radio frequency device, the first frequency point of the resonant network and the second frequency point of the radio frequency device satisfy a preset condition, wherein the first frequency point is the resonant zero point of the resonant network itself, and the second frequency point is the resonant zero point of the radio frequency device itself.

[0291] The resonant network itself may have at least one resonant zero, and the RF device itself may also have at least one resonant zero. Therefore, for each first frequency point and the corresponding second frequency point, the preset conditions include at least one of the following three conditions.

[0292] The first condition is that the relative bandwidth between the first frequency point and the second frequency point is less than or equal to a first threshold; the relative bandwidth is the absolute value of the difference between the first frequency point and the second frequency point divided by the second frequency point. In some embodiments, the first threshold is 0.3.

[0293] Thus, the relative bandwidth between the first frequency point and the second frequency point satisfies the following formula:

[0294]

[0295] Where f0 represents the first frequency point, f l This indicates the second frequency point.

[0296] The second condition is that the first offset of the resonant network is less than or equal to the second threshold, and the second offset of the RF device is less than or equal to the third threshold. The first offset is the absolute value of the difference between the third frequency point and the first frequency point, divided by the first frequency point. The third frequency point is the frequency point after the first frequency point has shifted due to the interaction between the resonant network and the RF device. The second offset is the absolute value of the difference between the fourth frequency point and the second frequency point, divided by the second frequency point. The fourth frequency point is the frequency point after the second frequency point has shifted due to the interaction between the resonant network and the RF device. In some embodiments, the second threshold is 0.15, and the third threshold is 0.15.

[0297] Thus, the first offset of the resonant network satisfies the following formula:

[0298]

[0299] Furthermore, the second offset of the RF device satisfies the following formula:

[0300]

[0301] Among them, f t Indicates the third frequency point, f lt This indicates the fourth frequency point. After the resonant network is connected to the RF device, the resonant zero point of the resonant network itself and the resonant zero point of the RF device itself will affect each other, causing the resonant zero point of the resonant network to shift from the first frequency point to the third frequency point, and causing the resonant zero point of the RF device to shift from the second frequency point to the fourth frequency point.

[0302] The third condition is that the absolute value of the difference between the first and second frequency points is less than or equal to the frequency point difference; the frequency point difference is the absolute value of the difference between the fifth and sixth frequency points, where the fifth frequency point is the frequency point corresponding to the maximum insertion loss of the resonant network itself, and the sixth frequency point is the frequency point corresponding to the minimum insertion loss of the resonant network itself.

[0303] Thus, the absolute value of the difference between the first frequency point and the second frequency point satisfies the following formula:

[0304] |f0-f l |≤|f max -f min |

[0305] Among them, f max Indicates the fifth frequency point, f min This indicates the sixth frequency point.

[0306] To facilitate understanding, the following will be combined with... Figure 20 The combiner 30 and resonant network 60 in the radio frequency circuit shown are schematically illustrated for the first, second, third, fourth, fifth, and sixth frequency points.

[0307] For example, Figure 29 This is a schematic diagram showing the resonant zeros of the resonant network and the combiner. (See diagram for example.) Figure 29 As shown, the horizontal axis represents frequency in GHz, and the vertical axis represents insertion loss in dB.

[0308] Among them, curve S101 represents Figure 20 The curve showing the relationship between insertion loss and frequency for the resonant network 60 is represented by curve S102. Figure 20 The curve showing the relationship between insertion loss and frequency for the combiner 30 is shown in curve S103. Figure 20 The curve shown is the relationship between insertion loss and frequency of the RF circuit after the resonant network 60 is connected in parallel between the PORT1 and PORT3 ports of the combiner 30.

[0309] like Figure 29 As shown, the resonant network 60 itself includes two resonant zeros, such as the resonant zero on the left near 2.7 GHz and the resonant zero on the right near 3.7 GHz. The combiner 30 itself also includes two resonant zeros, such as the resonant zero on the left near 2.9 GHz and the resonant zero on the right near 4.2 GHz.

[0310] Furthermore, the resonant zero of the resonant network 60 on the left corresponds to the resonant zero of the combiner 30 on the left. After connecting the resonant network 60 in parallel between ports PORT1 and PORT3 of the combiner 30, the resonant zero of the resonant network 60 on the left and the resonant zero of the combiner 30 on the left will influence each other, thus generating the resonant zero on the left side of the S103 curve. The resonant zero of the resonant network 60 on the right corresponds to the resonant zero of the combiner 30 on the right. After connecting the resonant network 60 in parallel between ports PORT1 and PORT3 of the combiner 30, the resonant zero of the resonant network 60 on the right will influence each other, thus generating the resonant zero on the right side of the S103 curve.

[0311] Taking the resonant zero of the resonant network 60 itself on the right side and the resonant zero of the combiner 30 itself on the right side as examples, the resonant zero of the resonant network 60 itself on the right side is... Figure 29 As shown by f0, the resonant zero of the combiner 30 itself on the right side is... Figure 29 f shown l The third frequency point after the first frequency point f0 undergoes a frequency shift is Figure 29 f shown t The second frequency point f l The fourth frequency point after the frequency shift is Figure 29 f shown lt .

[0312] Furthermore, for the two resonant zeros included in the resonant network 60 itself, each resonant zero corresponds to a frequency point with maximum insertion loss and a frequency point with minimum insertion loss, respectively. Taking the resonant zero on the right side of the resonant network 60 as an example, its corresponding frequency point with maximum insertion loss is... Figure 29 f shown max The frequency point with the minimum insertion loss is Figure 29 f shown min .

[0313] The above specific embodiments further illustrate the purpose, technical solution and beneficial effects of this application. It should be understood that the above are only specific embodiments of this application and are not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made on the basis of the technical solution of this application should be included within the scope of protection of this application.

Claims

1. A radio frequency circuit, characterized in that, include: Radio frequency devices and resonant networks; The radio frequency device includes a first port and a second port, and the channel between the first port and the second port is used to transmit radio frequency signals of a first frequency band; The resonant network is connected in parallel between the first port and the second port, and the resonant network is used to form a resonance with the radio frequency device; The first frequency point of the resonant network and the second frequency point of the radio frequency device satisfy a preset condition, wherein the first frequency point is the resonant zero point of the resonant network itself, and the second frequency point is the resonant zero point of the radio frequency device itself.

2. The radio frequency circuit according to claim 1, characterized in that, For each of the first frequency points and the corresponding second frequency points, the preset conditions include at least one of the following: The relative bandwidth between the first frequency point and the second frequency point is less than or equal to a first threshold; the relative bandwidth is the absolute value of the difference between the first frequency point and the second frequency point divided by the second frequency point. The first offset of the resonant network is less than or equal to the second threshold, and the second offset of the radio frequency device is less than or equal to the third threshold; the first offset is the absolute value of the difference between the third frequency point and the first frequency point divided by the first frequency point, where the third frequency point is the frequency point after the first frequency point has shifted due to the interaction between the resonant network and the radio frequency device; the second offset is the absolute value of the difference between the fourth frequency point and the second frequency point divided by the second frequency point, where the fourth frequency point is the frequency point after the second frequency point has shifted due to the interaction between the resonant network and the radio frequency device; The absolute value of the difference between the first frequency point and the second frequency point is less than or equal to the frequency point difference; The frequency difference is the absolute value of the difference between the fifth frequency point and the sixth frequency point. The fifth frequency point is the frequency point corresponding to the maximum insertion loss of the resonant network itself, and the sixth frequency point is the frequency point corresponding to the minimum insertion loss of the resonant network itself.

3. The radio frequency circuit according to claim 2, characterized in that, The first threshold is 0.3, the second threshold is 0.15, and the third threshold is 0.

15.

4. The radio frequency circuit according to claim 1, characterized in that, The resonant network includes at least one inductor and / or at least one capacitor.

5. The radio frequency circuit according to any one of claims 1 to 4, characterized in that, The radio frequency device is a combiner, and the radio frequency device also includes a third port. The channel between the first port and the third port is used to transmit radio frequency signals of a second frequency band, which is different from the second frequency band. The resonant network is used to improve the isolation between the radio frequency signals of the first frequency band and the radio frequency signals of the second frequency band.

6. The radio frequency circuit according to claim 5, characterized in that, The resonant network includes a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, and a first capacitor; Wherein, the first end of the first inductor is electrically connected to the first port, and the second end of the first inductor is electrically connected to the first end of the second inductor; The second terminal of the second inductor is electrically connected to the first terminal of the third inductor; The second end of the third inductor is electrically connected to the second port. The first end of the fourth inductor is electrically connected to the second end of the first inductor, and the second end of the fourth inductor is electrically connected to the first end of the fifth inductor; The second terminal of the fifth inductor is electrically connected to the second terminal of the second inductor; The first terminal of the first capacitor is electrically connected to the second terminal of the fourth inductor, and the second terminal of the first capacitor is electrically connected to the ground terminal.

7. The radio frequency circuit according to claim 5, characterized in that, The resonant network includes a sixth inductor, a seventh inductor, an eighth inductor, a ninth inductor, a second capacitor, and a third capacitor; Wherein, the first end of the sixth inductor is electrically connected to the first end of the third capacitor, and the second end of the sixth inductor is electrically connected to the second end of the third capacitor; The first end of the seventh inductor is electrically connected to the first port, and the second end of the seventh inductor is electrically connected to the first end of the eighth inductor; The second end of the eighth inductor is electrically connected to the second port; The first terminal of the ninth inductor is electrically connected to the first terminal of the seventh inductor, and the second terminal of the ninth inductor is electrically connected to the second terminal of the eighth inductor; The first terminal of the second capacitor is electrically connected to the second terminal of the seventh inductor, and the second terminal of the second capacitor is electrically connected to the first terminal of the third capacitor. The second terminal of the third capacitor is electrically connected to the ground terminal.

8. The radio frequency circuit according to claim 5, characterized in that, The resonant network includes a tenth inductor, an eleventh inductor, a twelfth inductor, a thirteenth inductor, a fourteenth inductor, and a fourth capacitor; Wherein, the first end of the tenth inductor is electrically connected to the first port, and the second end of the tenth inductor is electrically connected to the first end of the fourth capacitor; The first terminal of the eleventh inductor is electrically connected to the second terminal of the fourth capacitor, and the second terminal of the eleventh inductor is electrically connected to the second port. The first terminal of the twelfth inductor is electrically connected to the second terminal of the tenth inductor, and the second terminal of the twelfth inductor is electrically connected to the first terminal of the thirteenth inductor. The second terminal of the thirteenth inductor is electrically connected to the first terminal of the eleventh inductor; The first end of the fourteenth inductor is electrically connected to the second end of the twelfth inductor, and the second end of the fourteenth inductor is electrically connected to the ground terminal.

9. The radio frequency circuit according to claim 5, characterized in that, The resonant network includes a fifteenth inductor, a sixteenth inductor, and a seventeenth inductor; Wherein, the first end of the fifteenth inductor is electrically connected to the first port, and the second end of the fifteenth inductor is electrically connected to the first end of the sixteenth inductor; The second terminal of the sixteenth inductor is electrically connected to the second port. The first end of the seventeenth inductor is electrically connected to the first end of the sixteenth inductor, and the second end of the seventeenth inductor is electrically connected to the second end of the sixteenth inductor.

10. The radio frequency circuit according to claim 5, characterized in that, The resonant network includes an eighteenth inductor, a nineteenth inductor, a twentieth inductor, a twenty-first inductor, a fifth capacitor, and a sixth capacitor; Wherein, the first end of the eighteenth inductor is electrically connected to the first port, and the second end of the eighteenth inductor is electrically connected to the second port; The first end of the nineteenth inductor is electrically connected to the first end of the eighteenth inductor, and the second end of the nineteenth inductor is electrically connected to the first end of the twentieth inductor. The second terminal of the twentieth inductor is electrically connected to the second terminal of the eighteenth inductor; The first end of the 21st inductor is electrically connected to the ground terminal, and the second end of the 21st inductor is electrically connected to the second end of the 18th inductor. The first terminal of the fifth capacitor is electrically connected to the first terminal of the twenty-first inductor, and the second terminal of the fifth capacitor is electrically connected to the first terminal of the sixth capacitor. The second terminal of the sixth capacitor is electrically connected to the second terminal of the eighteenth inductor.

11. The radio frequency circuit according to claim 5, characterized in that, The resonant network includes a 22nd inductor, a 23rd inductor, a 24th inductor, a 25th inductor, a 7th capacitor, and an 8th capacitor; Wherein, the first end of the 22nd inductor is electrically connected to the first end of the 7th capacitor, and the second end of the 22nd inductor is electrically connected to the second end of the 8th capacitor; The first end of the 23rd inductor is electrically connected to the first port, and the second end of the 23rd inductor is electrically connected to the first end of the 24th inductor. The second terminal of the 24th inductor is electrically connected to the second port; The first end of the 25th inductor is electrically connected to the first end of the 23rd inductor, and the second end of the 25th inductor is electrically connected to the second end of the 24th inductor. The first terminal of the seventh capacitor is electrically connected to the second terminal of the twenty-third inductor, and the second terminal of the seventh capacitor is electrically connected to the first terminal of the eighth capacitor. The second terminal of the eighth capacitor is electrically connected to the ground terminal.

12. The radio frequency circuit according to claim 5, characterized in that, The resonant network includes a 26th inductor, a 27th inductor, a 9th capacitor, a 10th capacitor, and an 11th capacitor. Wherein, the first end of the 26th inductor is electrically connected to the first port, and the second end of the 26th inductor is electrically connected to the first end of the 9th capacitor; The second terminal of the ninth capacitor is electrically connected to the first terminal of the tenth capacitor; The second terminal of the tenth capacitor is electrically connected to the second port. The first terminal of the eleventh capacitor is electrically connected to the first terminal of the ninth capacitor, and the second terminal of the eleventh capacitor is electrically connected to the first terminal of the twenty-seventh inductor. The second terminal of the 27th inductor is electrically connected to the second terminal of the 9th capacitor.

13. The radio frequency circuit according to any one of claims 1 to 4, characterized in that, The radio frequency device is a filter, which is used to filter out signals other than radio frequency signals in the channel between the first port and the second port. The resonant network is used to adjust the passband impedance of the filter.

14. The radio frequency circuit according to claim 13, characterized in that, The resonant network includes the 28th inductor, the 29th inductor, the 30th inductor, the 31st inductor, the 32nd inductor, the 33rd inductor, the 12th capacitor, and the 13th capacitor; Wherein, the first end of the 28th inductor is electrically connected to the first port, and the second end of the 28th inductor is electrically connected to the first end of the 12th capacitor; The second terminal of the twelfth capacitor is electrically connected to the first terminal of the thirtieth inductor. The first end of the 29th inductor is electrically connected to the first end of the 12th capacitor, and the second end of the 29th inductor is electrically connected to the first end of the 13th capacitor. The second terminal of the thirteenth capacitor is electrically connected to the first terminal of the thirtieth inductor. The second end of the thirtieth inductor is electrically connected to the second port. The first end of the thirty-first inductor is electrically connected to the second end of the twenty-eighth inductor, and the second end of the thirty-first inductor is electrically connected to the ground terminal; The first end of the thirty-second inductor is electrically connected to the first end of the thirty-tenth inductor, and the second end of the thirty-second inductor is electrically connected to the ground terminal. The first end of the thirty-third inductor is electrically connected to the second end of the thirty-tenth inductor, and the second end of the thirty-third inductor is electrically connected to the ground terminal.

15. The radio frequency circuit according to claim 13, characterized in that, The resonant network includes the thirty-fourth inductor, the thirty-fifth inductor, the thirty-sixth inductor, the thirty-seventh inductor, the fourteenth capacitor, and the fifteenth capacitor; Wherein, the first end of the thirty-fourth inductor is electrically connected to the first port, and the second end of the thirty-fourth inductor is electrically connected to the first end of the fourteenth capacitor; The second terminal of the fourteenth capacitor is electrically connected to the first terminal of the thirty-sixth inductor. The first terminal of the thirty-fifth inductor is electrically connected to the first terminal of the fourteenth capacitor, and the second terminal of the thirty-fifth inductor is electrically connected to the first terminal of the thirty-sixth inductor. The second end of the thirty-sixth inductor is electrically connected to the second port. The first end of the thirty-seventh inductor is electrically connected to the first end of the thirty-sixth inductor, and the second end of the thirty-seventh inductor is electrically connected to the ground terminal; The first terminal of the fifteenth capacitor is electrically connected to the second terminal of the thirty-fourth inductor, and the second terminal of the fifteenth capacitor is electrically connected to the ground terminal.

16. A radio frequency front-end module, characterized in that, Includes the radio frequency circuit as described in any one of claims 1 to 15.

17. An electronic device, characterized in that, include: Baseband chip, radio frequency chip, antenna, and radio frequency front-end module as described in claim 16; The baseband chip is electrically connected to the radio frequency chip, the radio frequency chip is electrically connected to the radio frequency front-end module, and the radio frequency front-end module is electrically connected to the antenna.

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