Optical signal transceiver module and communication device

Abstract

The application relates to an optical signal transceiver module and a communication device, which comprises a shell provided with a containing cavity, an optical connection end and an electrical connection end; a first substrate arranged in the containing cavity; a plurality of micro light emitting diodes arranged on one side of the first substrate, and a first gap part between two adjacent micro light emitting diodes; a plurality of photodiodes arranged on the same side of the first substrate as the plurality of micro light emitting diodes, and a second gap part between the plurality of micro light emitting diodes and the plurality of photodiodes; an optical fiber assembly comprising a plurality of cores, and the cores are connected with corresponding at least one micro light emitting diode or at least one photodiode through the optical connection end; a first light shielding structure arranged at least in the first gap part, and the first light shielding structure surrounds the corresponding micro light emitting diode; a second light shielding structure arranged in the second gap part; and a standard interface arranged in the electrical connection end. The application can balance the transmission performance and portability.

Description

Technical Field

[0001] This application relates to the field of optical communication, and in particular to an optical signal transceiver module and communication equipment. Background Technology

[0002] Optical modules (optical transceiver modules) are the most widely used optical transmission devices in the current communication field, playing a crucial role in information transmission. An optical module includes an emissive module, which emits optical signals. Essentially, an optical module (optical transceiver module) is an optoelectronic device capable of bidirectional conversion between photoelectric signals and electro-optical signals. Through a precise photoelectric conversion mechanism, it provides core support for high-speed data transmission.

[0003] However, optical signal transceiver modules in related technologies have the problem of not being able to simultaneously achieve high signal transmission performance and lightweight structure. Summary of the Invention

[0004] Therefore, it is necessary to provide an optical signal transceiver module and communication device, which aims to solve the problem that optical signal transceiver modules in related technologies cannot simultaneously achieve high signal transmission performance and lightweight structure.

[0005] In a first aspect, embodiments of this application provide an optical signal transceiver module, including:

[0006] The outer casing has a receiving cavity, and an optical connection terminal and an electrical connection terminal connected to the receiving cavity;

[0007] A first substrate is disposed within the receiving cavity;

[0008] Multiple micro light-emitting diodes are disposed within the receiving cavity and spaced apart on one side of the first substrate, with a first gap between adjacent micro light-emitting diodes;

[0009] Multiple photodiodes are disposed within the receiving cavity and are located on the same side of the first substrate as the multiple micro-light-emitting diodes, with a second gap between the multiple micro-light-emitting diodes and the multiple photodiodes;

[0010] An optical fiber assembly includes multiple fiber cores, each fiber core being connected to at least one corresponding micro light-emitting diode or at least one photodiode via the optical connection terminal.

[0011] A first light-shielding structure is disposed at least in the first gap portion, and in a direction parallel to the plane of the first substrate, the first light-shielding structure is disposed around the corresponding micro light-emitting diode;

[0012] A second light-shielding structure is disposed in the second gap portion;

[0013] A standard interface is provided at the electrical connection end.

[0014] In some implementations, the standard interface includes at least one of UART, USART, SPI, I2S, CAN, MII, ETH, USB, and general-purpose I / O interfaces.

[0015] In some embodiments, the housing includes a first surface and a second surface disposed opposite to each other, the optical connection terminal includes a first opening through the first surface, and the electrical connection terminal includes a second opening through the second surface.

[0016] In some embodiments, the micro light-emitting diode includes a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer, the light-emitting layer, and the second semiconductor layer are stacked sequentially in a first direction, which is perpendicular to the plane of the first substrate. The second semiconductor layer is located on the side of the light-emitting layer away from the first substrate.

[0017] The first gap is a first groove that penetrates the second semiconductor layer, the light-emitting layer and the first semiconductor layer.

[0018] In some embodiments, the photodiode includes a third electrode, a third semiconductor layer, a photoelectric conversion layer, a fourth semiconductor layer, and a fourth electrode. The third electrode is electrically connected to the third semiconductor layer, and the fourth electrode is electrically connected to the fourth semiconductor layer. The third semiconductor layer, the photoelectric conversion layer, and the fourth semiconductor layer are stacked sequentially in the first direction, and the fourth semiconductor layer is located on the side of the photoelectric conversion layer away from the first substrate.

[0019] The second gap is a second groove that penetrates the first semiconductor layer, the light-emitting layer and the second semiconductor layer, and also penetrates the third semiconductor layer, the photoelectric conversion layer and the fourth semiconductor layer.

[0020] In some embodiments, the first light-shielding structure includes a first light-absorbing portion, which fills the first groove;

[0021] The second light-shielding structure includes a second light-absorbing part, which fills the second groove; the materials of both the first light-absorbing part and the second light-absorbing part include black resin.

[0022] In some embodiments, the first gap between the plurality of micro LEDs is interconnected, and the first gap between the plurality of micro LEDs is interconnected with the second gap.

[0023] The first light-absorbing part and the second light-absorbing part are made of the same material and are an integral structure.

[0024] In some embodiments, the first light-shielding structure is in the form of a mesh, the mesh including a mesh core and mesh openings, and the micro light-emitting diodes are at least partially located in the corresponding mesh openings; the mesh core surrounds the corresponding micro light-emitting diodes in a direction parallel to the plane of the first substrate;

[0025] The edge mesh of the first light-shielding structure is connected to the second light-shielding structure, and the edge mesh of the first light-shielding structure and the second light-shielding structure are arranged around the plurality of micro light-emitting diodes.

[0026] In some embodiments, the distance from the surface of the first light-shielding structure away from the first substrate and the distance from the surface of the second light-shielding structure away from the first substrate to the first substrate are both greater than the distance from the surface of the second semiconductor layer away from the first substrate to the first substrate.

[0027] The distances from the surface of the first light-shielding structure away from the first substrate and the distances from the surface of the second light-shielding structure away from the first substrate to the first substrate are both greater than the distances from the surface of the fourth semiconductor layer away from the first substrate to the first substrate.

[0028] Secondly, based on the same application concept, embodiments of this application also provide a communication device, including the optical signal transceiver module described in any one of the above-mentioned applications.

[0029] In this embodiment, firstly, the first light-shielding structure can absorb / block the light emitted by the micro-LEDs, for example, absorbing large-angle light, thereby preventing large-angle light from reaching adjacent micro-LEDs and causing interference or crosstalk. The distance between two adjacent micro-LEDs can be reduced, resulting in a smaller size and weight for the optical transceiver module. Secondly, the second light-shielding structure can absorb / block the light emitted by the micro-LEDs, for example, absorbing large-angle light, thereby preventing large-angle light from reaching photodiodes and causing interference or crosstalk. The distance between the micro-LEDs and photodiodes can be minimized, and the micro-LEDs and photodiodes can be mounted on the same substrate, resulting in a smaller size and weight for the optical transceiver module. Thirdly, a standard interface is located at the electrical connection end, allowing the optical transceiver module to connect to external devices, such as through an external electrical connection. This standardizes the interface of the optical transceiver module, allowing it to be shared with existing standard interfaces, and also reduces the need for the interface to occupy a large volume. Therefore, the signal transmission performance of the optical transceiver module is improved in multiple ways, and the structure is made more lightweight. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a first overall schematic diagram of an optical signal transceiver module provided in an embodiment of this application.

[0032] Figure 2 This is a second overall schematic diagram of an optical signal transceiver module provided in an embodiment of this application.

[0033] Figure 3 This is a top view schematic diagram of a miniature light-emitting diode and a photodiode in an optical signal transceiver module provided in an embodiment of this application.

[0034] Figure 4 This is a cross-sectional schematic diagram of a miniature light-emitting diode and a photodiode in an optical signal transceiver module provided in an embodiment of this application.

[0035] Explanation of reference numerals in the attached drawings: Optical signal transceiver module 100; Housing 10; First substrate 11; Miniature light-emitting diode 20; Photodiode 30; Optical fiber assembly 80; First light-shielding structure 42; Second light-shielding structure 43; Standard interface 102J; Receiving cavity 101; Optical connection terminal 103; Electrical connection terminal 102; First gap JX1; Second gap JX2; Fiber core 81; First electrode 21; First semiconductor layer 22; Light-emitting layer 23; Second semiconductor layer 24; Second electrode 25; Third electrode 31; Third semiconductor layer 32; Photoelectric conversion layer 33; Fourth semiconductor layer 34; Fourth electrode 35; Circuit board 50;

[0036] First direction Y; first groove 42C; second groove 43C; first distance h1; second distance h2; first insulating layer 41; reflector 60. Detailed Implementation

[0037] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of this application.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0039] When describing positional relationships, unless otherwise specified, when an element, such as a layer, film, or substrate, is referred to as being "on" another element, it may be directly on the other element or there may be intermediate elements present. Furthermore, when a layer is referred to as being "below" another layer, it may be directly below it or there may be one or more intermediate elements present. It is also understood that when a layer is referred to as being "between" two layers, it may be the only layer between the two layers, or there may be one or more intermediate elements present.

[0040] When using the terms “including,” “having,” and “comprising” as described herein, another component may be added unless explicitly qualifying terms such as “only,” “consisting of,” etc. are used. Unless otherwise stated, singular terms may include plural forms and should not be construed as having a quantity of one.

[0041] It should be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this application, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0042] It should also be understood that, in interpreting an element, although not explicitly described, the element is interpreted as including a range of error, which should be within the acceptable deviation range of a particular value as determined by a person skilled in the art. For example, "approximately," "about," or "substantially" can mean within one or more standard deviations, without limitation herein.

[0043] Furthermore, in the instruction manual, the phrase "planar distribution diagram" refers to the diagram when the target part is viewed from above, and the phrase "cross-sectional diagram" refers to the diagram when the target part is viewed from the side as a cross-section taken by vertically cutting the target part.

[0044] Furthermore, the accompanying drawings are not drawn to a 1:1 scale, and the relative dimensions of the components are shown in the drawings only as examples and not necessarily to actual scale.

[0045] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the implementation methods provided in the embodiments of this application can be combined with each other without contradiction.

[0046] In related technologies, optical transceiver modules suffer from a trade-off between high signal transmission performance and lightweight design. To improve signal transmission performance, optical transceiver modules typically require complex structures, hindering their portability. For example, to prevent crosstalk between adjacent micro-LEDs, the distance between them needs to be increased, resulting in a larger transceiver module. Similarly, to prevent interference between micro-LEDs and photodiodes, the distance between them needs to be increased, or they may even be placed on different substrates or circuit boards, further increasing the size and weight of the transceiver module.

[0047] To address the aforementioned problems, this application provides an optical signal transceiver module and communication device that can solve these issues.

[0048] Please see Figures 1 to 4 . Figure 1 This is a first overall schematic diagram of an optical signal transceiver module provided in an embodiment of this application. Figure 2 This is a second overall schematic diagram of an optical signal transceiver module provided in an embodiment of this application. Figure 3 This is a top view schematic diagram of a miniature light-emitting diode and a photodiode in an optical signal transceiver module provided in an embodiment of this application. Figure 4 This is a cross-sectional schematic diagram of a miniature light-emitting diode and a photodiode in an optical signal transceiver module provided in an embodiment of this application.

[0049] Firstly, please refer to Figures 1 to 4This application provides an optical signal transceiver module 100, which includes a housing 10, a first substrate 11, a plurality of miniature light-emitting diodes 20, a plurality of photodiodes 30, an optical fiber assembly 80, a first light-shielding structure 42, a second light-shielding structure 43, and a standard interface 102J. The housing 10 has a receiving cavity 101, and optical connection terminals 103 and electrical connection terminals 102 connecting the receiving cavity 101. The first substrate 11 is disposed within the receiving cavity 101. A plurality of miniature light-emitting diodes 20 are disposed within the receiving cavity 101 and spaced apart on one side of the first substrate 11, with a first gap JX1 between adjacent miniature light-emitting diodes 20. A plurality of photodiodes 30 are disposed within the receiving cavity 101 and on the same side of the first substrate 11 as the plurality of miniature light-emitting diodes 20. The plurality of miniature light-emitting diodes 20 and the plurality of photodiodes 30 are connected to the optical fiber assembly 80. A second gap JX2 is provided between the diodes 30; the optical fiber assembly 80 includes multiple fiber cores 81, which are connected to at least one corresponding micro light-emitting diode 20 or at least one photodiode 30 through an optical connection terminal 103; a first light-shielding structure 42 is provided at least in the first gap JX1, and in a direction parallel to the plane of the first substrate 11, the first light-shielding structure 42 surrounds the corresponding micro light-emitting diode 20; a second light-shielding structure 43 is provided in the second gap JX2; and a standard interface 102J is provided in the electrical connection terminal 102.

[0050] For example, the material of the first substrate 11 can be sapphire, quartz glass, SiC, AlN, GaN or Si, etc., and is not limited here.

[0051] For example, a micro light-emitting diode can be a MicroLED (Micro Light-Emitting Diode), but it is not limited to this. Micro light-emitting diodes can emit light or light signals.

[0052] For example, photodiode 30 can receive light and optical signals and convert them into electrical signals.

[0053] For example, the micro light-emitting diode 20 can be directly formed (grown) on the first substrate 11, or the micro light-emitting diode 20 can be transferred to the first substrate 11 by processes such as transfer and bonding, which is not limited here. The photodiode 30 can be directly formed (grown) on the first substrate 11, or the photodiode 30 can be transferred to the first substrate 11 by processes such as transfer and bonding, which is not limited here.

[0054] For example, such as Figure 3 As shown, the first light-shielding structure 42 is located at the corresponding first gap JX1, and in a direction parallel to the plane where the first substrate 11 is located, the first light-shielding structure 42 is arranged around the corresponding micro light-emitting diode 20.

[0055] For example, such as Figure 3 As shown, the first light-shielding structure 42 can absorb / block the light emitted by the micro LED 20, such as absorbing large-angle light, thereby preventing large-angle light from being transmitted to adjacent micro LEDs and causing interference or crosstalk.

[0056] For example, such as Figure 4 As shown, the second light-shielding structure 43 can absorb / block the light emitted by the micro light-emitting diode 20, such as absorbing large-angle light, thereby preventing large-angle light from being transmitted to the photodiode 30 and causing interference or crosstalk.

[0057] For example, the first light-shielding structure 42 and the second light-shielding structure 43 can be made of materials capable of absorbing light emitted by the micro LED 20, such as black resin.

[0058] For example, the fiber optic assembly can be an optical cable, and the fiber optic assembly can include multiple optical fibers (or fiber cores), each fiber including a fiber core 81. A number of fiber cores 81 are connected to multiple miniature light-emitting diodes 20, and the fiber cores 81 can transmit the light emitted by the miniature light-emitting diodes 20. A number of fiber cores 81 are connected to multiple photodiodes 30, and the photodiodes 30 can receive the light transmitted by the fiber cores 81.

[0059] For example, the fiber core 81 to which the miniature light-emitting diode 20 is connected is different from the fiber core 81 to which the photodiode 30 is connected.

[0060] For example, a standard interface 102J is provided at the electrical connection terminal 102. The optical signal transceiver module 100 can be connected to the outside via the standard interface 102J, for example, to an external electrical connection. The first substrate 11 is electrically connected to the standard interface 102J via the circuit board 50.

[0061] In this embodiment, firstly, the first light-shielding structure 42 can absorb / block the light emitted by the micro-LED 20, for example, absorbing large-angle light, thereby preventing large-angle light from being transmitted to adjacent micro-LEDs and causing interference or crosstalk. The distance between two adjacent micro-LEDs can be reduced, resulting in a reduction in the size and weight of the optical signal transceiver module 100. Secondly, the second light-shielding structure 43 can absorb / block the light emitted by the micro-LED 20, for example, absorbing large-angle light, thereby preventing large-angle light from being transmitted to the photodiode 30 and causing interference or crosstalk. The distance between the micro-LED 20 and the photodiode 30 can be minimized. The micro-LED 20 and the photodiode 30 can be disposed on the same substrate, resulting in a smaller size and weight of the optical signal transceiver module 100. Thirdly, the standard interface 102J is located at the electrical connection terminal 102. The optical transceiver module 100 can connect to the outside through the standard interface 102J, such as through an external electrical connection. This standardizes the interface of the optical transceiver module 100, allowing it to be shared with existing standard interfaces, and also reduces the need for the interface of the optical transceiver module 100 to occupy a large volume. Therefore, from multiple aspects, the signal transmission performance of the optical transceiver module 100 is improved, and the structure is made more lightweight.

[0062] In some implementations, the standard interface 102J includes at least one of UART, USART, SPI, I2S, CAN, MII, ETH, USB, and general-purpose I / O interfaces.

[0063] For example, when the standard interface 102J is a USB interface, the physical form of the standard interface 102J can be any one of Type-A, Type-B, Type-C, Mini-USB, or Micro-USB.

[0064] In some implementations, such as Figure 1 and Figure 2 As shown, the housing 10 includes a first surface and a second surface disposed opposite to each other, the optical connection terminal 103 includes a first opening penetrating through the first surface, and the electrical connection terminal 102 includes a second opening penetrating through the second surface.

[0065] For example, such as Figure 1 and Figure 2 As shown, the optical connection terminal 103 includes a first opening penetrating the first surface, and the electrical connection terminal 102 includes a second opening penetrating the second surface. That is, the optical connection terminal 103 and the electrical connection terminal 102 are located on opposite surfaces of the housing 10, or the optical connection terminal 103 and the electrical connection terminal 102 are located at opposite ends of the housing 10. This can facilitate the electrical connection and optical connection (connection of optical fiber assembly 80) of the optical signal transceiver module 100, and avoid interference or obstruction between the electrical connection and the optical connection.

[0066] In some implementations, such as Figure 4 As shown, the miniature light-emitting diode 20 includes a first electrode 21, a first semiconductor layer 22, a light-emitting layer 23, a second semiconductor layer 24, and a second electrode 25. The first electrode 21 is electrically connected to the first semiconductor layer 22, and the second electrode 25 is electrically connected to the second semiconductor layer 24. The first semiconductor layer 22, the light-emitting layer 23, and the second semiconductor layer 24 are stacked sequentially in a first direction Y, which is perpendicular to the plane of the first substrate 11. The second semiconductor layer 24 is located on the side of the light-emitting layer 23 away from the first substrate 11. The first gap JX1 is a first groove 42C that penetrates the second semiconductor layer 24, the light-emitting layer 23, and the first semiconductor layer 22.

[0067] For example, the first semiconductor layer 22 and the second semiconductor layer 24 may have different conductivity types of doped elements. For instance, the first semiconductor layer 22 may be n-GaN, the light-emitting layer 23 may be a multiple quantum well (MQW) active layer, and the second semiconductor layer 24 may be p-GaN, but this is not the only possibility.

[0068] It should be noted that in some embodiments, the miniature light-emitting diode 20 can be a regular structure, a flip structure, a vertical structure, etc., and is not limited here. Figure 4 The diagram shows that the miniature light-emitting diode 20 has a vertical structure.

[0069] For example, the first gap JX1 is a first groove 42C that penetrates the second semiconductor layer 24, the light-emitting layer 23 and the first semiconductor layer 22, so that the first light-shielding structure 42 can surround the sidewalls of the second semiconductor layer 24, the light-emitting layer 23 and the first semiconductor layer 22 of the corresponding micro light-emitting diode 20, which can effectively block the lateral transmission of light and better avoid crosstalk problems; at this time, the distance between two adjacent micro light-emitting diodes can be reduced to the extreme, so that the size and weight of the optical signal transceiver module 100 are reduced.

[0070] In some implementations, such as Figure 4 As shown, the photodiode 30 includes a third electrode 31, a third semiconductor layer 32, a photoelectric conversion layer 33, a fourth semiconductor layer 34, and a fourth electrode 35. The third electrode 31 is electrically connected to the third semiconductor layer 32, and the fourth electrode 35 is electrically connected to the fourth semiconductor layer 34. The third semiconductor layer 32, the photoelectric conversion layer 33, and the fourth semiconductor layer 34 are stacked sequentially in the first direction Y. The fourth semiconductor layer 34 is located on the side of the photoelectric conversion layer 33 away from the first substrate 11. The second gap JX2 is a second groove 43C that penetrates the first semiconductor layer 22, the light-emitting layer 23, and the second semiconductor layer 24, and also penetrates the third semiconductor layer 32, the photoelectric conversion layer 33, and the fourth semiconductor layer 34.

[0071] For example, the third semiconductor layer 32 and the fourth semiconductor layer 34 have different conductivity types of doped elements; for instance, the first semiconductor layer 22 is n-GaN and the second semiconductor layer 24 is p-GaN. The photoelectric conversion layer 33 can be a uniform intrinsic layer / depletion layer, a single uniform semiconductor (Si / InGaAs, etc.), a multilayer stack without quantum wells, or a barrier structure, but is not limited to these.

[0072] It should be noted that in some embodiments, the photodiode 30 can be a conventional structure, a flip-chip structure, a vertical structure, etc., and is not limited here. Figure 4 The photodiode 30 shown in the diagram has a vertical structure.

[0073] For example, since multiple micro-LEDs 20 are adjacent to multiple photodiodes 30, and the distance between multiple micro-LEDs 20 and multiple photodiodes 30 is small, the second groove 43C not only penetrates the first semiconductor layer 22, the light-emitting layer 23 and the second semiconductor layer 24, but also penetrates the third semiconductor layer 32, the photoelectric conversion layer 33 and the fourth semiconductor layer 34; that is, the second groove 43C is between the sidewalls of some micro-LEDs 20 and the sidewalls of some photodiodes 30.

[0074] For example, the second gap JX2 is a second groove 43C that penetrates the first semiconductor layer 22, the light-emitting layer 23, and the second semiconductor layer 24, and also penetrates the third semiconductor layer 32, the photoelectric conversion layer 33, and the fourth semiconductor layer 34. This allows the second groove 43C / second light-shielding structure 43 to contact the sidewalls of the second semiconductor layer 24, the light-emitting layer 23, and the first semiconductor layer 22 of the corresponding micro-LED 20, and the sidewalls of the third semiconductor layer 32, the photoelectric conversion layer 33, and the fourth semiconductor layer 34 of the corresponding photodiode 30. Multiple micro-LEDs 20 and multiple photodiodes 30 are adjacent to each other with the distance minimized, and the second light-shielding structure 43 also achieves the effect of absorbing / blocking light, thus reducing the size and weight of the optical signal transceiver module 100.

[0075] In some implementations, such as Figure 4 As shown, the first light-blocking structure 42 includes a first light-absorbing part, which fills the first groove 42C; the second light-blocking structure 43 includes a second light-absorbing part, which fills the second groove 43C; the materials of the first light-absorbing part and the second light-absorbing part both include black materials such as black resin.

[0076] For example, such as Figure 4As shown, the first light-shielding structure 42 includes a first light-absorbing part, and the second light-shielding structure 43 includes a second light-absorbing part. The materials of the first light-absorbing part and the second light-absorbing part both include black materials such as black resin. The first light-absorbing part and the second light-absorbing part can absorb side light, thereby avoiding crosstalk and light interference.

[0077] In some implementations, such as Figure 3 and Figure 4 As shown, the first gap JX1 between the multiple micro LEDs 20 is interconnected, and the first gap JX1 between the multiple micro LEDs 20 is connected to the second gap JX2; the first light-absorbing part and the second light-absorbing part are made of the same material and are an integral structure.

[0078] For example, the first gaps JX1 between the multiple micro LEDs 20 are interconnected, so that the multiple micro LEDs 20 are independent of each other, and the first light-shielding structure 42 can absorb / block the lateral light between any two adjacent micro LEDs 20.

[0079] For example, the first gap JX1 and the second gap JX2 between the multiple micro light-emitting diodes 20 are connected, so that the multiple micro light-emitting diodes 20 are adjacent to the multiple photodiodes 30 and the distance between them is reduced to the extreme.

[0080] For example, both the first light-absorbing part and the second light-absorbing part are made of black resin, and the first light-absorbing part and the second light-absorbing part can be formed by the same process, simplifying the process steps.

[0081] In some implementations, such as Figure 3 and Figure 4 As shown, the first light-shielding structure 42 is in the form of a mesh, which includes a mesh trunk and mesh openings. The micro light-emitting diodes 20 are at least partially located in the corresponding mesh openings. In a direction parallel to the plane of the first substrate 11, the mesh trunk surrounds the corresponding micro light-emitting diodes 20. The edge mesh trunk of the first light-shielding structure 42 is connected to the second light-shielding structure 43, and the edge mesh trunk of the first light-shielding structure 42 and the second light-shielding structure 43 are arranged around a plurality of micro light-emitting diodes 20.

[0082] For example, the edge mesh of the first light-shielding structure 42 and the second light-shielding structure 43 are connected, and the edge mesh of the first light-shielding structure 42 and the second light-shielding structure 43 are arranged around the multiple micro light-emitting diodes 20, which can prevent the lateral light of the micro light-emitting diodes 20 from being transmitted to the outside, and prevent the outside / outside reflection of lateral light from causing light interference.

[0083] For example, the edge mesh of the first light-shielding structure 42 and the second light-shielding structure 43 are connected, and the edge mesh of the first light-shielding structure 42 and the second light-shielding structure 43 are arranged around a plurality of micro light-emitting diodes 20. The second light-shielding structure 43 can be a part of the mesh-like edge mesh.

[0084] In some implementations, such as Figure 3 and Figure 4 As shown, the distances from the surface of the first light-shielding structure 42 away from the first substrate 11 and the distances from the surface of the second light-shielding structure 43 away from the first substrate 11 to the first substrate 11 are both greater than the distance from the surface of the second semiconductor layer 24 away from the first substrate 11 to the first substrate 11. The distances from the surface of the first light-shielding structure 42 away from the first substrate 11 and the distances from the surface of the second light-shielding structure 43 away from the first substrate 11 to the first substrate 11 are both greater than the distance from the surface of the fourth semiconductor layer 34 away from the first substrate 11 to the first substrate 11.

[0085] For example, such as Figure 3 and Figure 4 As shown, the distance from the surface of the first light-shielding structure 42 away from the first substrate 11 and the distance from the surface of the second light-shielding structure 43 away from the first substrate 11 to the first substrate 11 are both the first distance h1. The distance from the surface of the second semiconductor layer 24 away from the first substrate 11 to the first substrate 11 is the second distance h2. The distance from the surface of the fourth semiconductor layer 34 away from the first substrate 11 to the first substrate 11 is the third distance (not shown in the figure). The first distance h1 is greater than the second distance h2. The first distance h1 is greater than the third distance, which can better absorb / block the lateral light transmitted by the micro light-emitting diode 20, better avoid interference and crosstalk between micro light-emitting diodes 20, and avoid interference of micro light-emitting diodes 20 to photodiode 30.

[0086] For example, such as Figure 3 and Figure 4 As shown, in order to better prevent lateral light from the micro light-emitting diode 20 from entering the photodiode 30, the width of the second light-shielding structure 43 is greater than the width of the first light-shielding structure 42 in the direction parallel to the plane of the first substrate 11. For example, the width of the second light-shielding structure 43 is greater than 2 or 3 times the width of the first light-shielding structure 42.

[0087] It should be noted that, in some embodiments, the optical signal transceiver module 100 further includes a first insulating layer 41. The first insulating layer 41 is located between the first substrate 11 and the first light-shielding structure 42, between the first substrate 11 and the second light-shielding structure 43, and also between the sidewall of the micro-light-emitting diode 20 and the first light-shielding structure 42, and between the sidewall of the photodiode 30 and the second light-shielding structure 43. During the manufacturing process of the optical signal transceiver module 100, a first groove 42C and a second groove 43C are first formed. Then, the first insulating layer 41 is formed in the first groove 42C and the second groove 43C, covering the bottom and sidewalls of the first groove 42C and the bottom and sidewalls of the second groove 43C. Then, the first light-shielding structure 42 and the second light-shielding structure 43 are formed in the first groove 42C and the second groove 43C, respectively. The material of the first insulating layer 41 may include at least one of silicon oxide, silicon nitride, and aluminum oxide. The first insulating layer 41 can prevent water, oxygen, etc., from entering the first substrate 11, the micro-light-emitting diode 20, and the photodiode 30, thereby improving reliability.

[0088] It should be noted that, Figure 1 The diagram illustrates that the optical connection terminal 103 and the electrical connection terminal 102 are located on opposite surfaces of the housing 10, or at opposite ends of the housing 10. The direction from the optical connection terminal 103 to the electrical connection terminal 102 is the second direction. The light-emitting surface of the micro LED 20 and the light-receiving surface of the photodiode 30 are oriented towards the corresponding fiber core 81 along the second direction.

[0089] It should be noted that, Figure 2 The diagram illustrates that the optical connection terminal 103 and the electrical connection terminal 102 are located on opposite surfaces of the housing 10, or at opposite ends of the housing 10. The direction from the optical connection terminal 103 to the electrical connection terminal 102 is the second direction. The light-emitting surface of the micro LED 20 and the light-receiving surface of the photodiode 30 face the reflector 60 along the third direction. The optical signal transceiver module 100 also includes the reflector 60. The light emitted by the micro LED 20 is reflected by the reflector 60 and enters the corresponding fiber core 81. The light transmitted by the fiber core 81 is reflected by the reflector 60 and enters the corresponding photodiode 30.

[0090] It should be noted that the optical signal transceiver module 100 may also include a first chip, which is set in the receiving cavity 101. The first chip has a built-in programmable protocol parsing function, builds a dual-layer protocol adaptation architecture, and solidifies the USB and Ethernet dual protocol frame structure, which can realize millisecond-level automatic scene recognition and seamless protocol switching without the need for device drivers and system modifications.

[0091] It should be noted that, Figure 3The diagram illustrates a 4×4 array of miniature LEDs 20 and photodiodes 30. The number and array configuration of the miniature LEDs and photodiodes 30 are not limited to... Figure 3 As shown.

[0092] Secondly, based on the same application concept, this application embodiment also provides a communication device, which includes the optical signal transceiver module 100 of any of the above.

[0093] For example, the optical signal transceiver module 100 can be applied to fields such as high-speed interconnection of servers / switches / storage to support AI large-scale model training, cloud computing, and supercomputing, but is not limited to these applications. The optical signal transceiver module 100 can be a component in the aforementioned AI large-scale model training, cloud computing, and supercomputing devices, but is not limited to these applications.

[0094] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0095] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An optical signal transceiver module, characterized in that, include: The outer casing has a receiving cavity, and an optical connection terminal and an electrical connection terminal connected to the receiving cavity; A first substrate is disposed within the receiving cavity; Multiple micro light-emitting diodes are disposed within the receiving cavity and spaced apart on one side of the first substrate, with a first gap between adjacent micro light-emitting diodes; Multiple photodiodes are disposed within the receiving cavity and are located on the same side of the first substrate as the multiple micro-light-emitting diodes, with a second gap between the multiple micro-light-emitting diodes and the multiple photodiodes; An optical fiber assembly includes multiple fiber cores, each fiber core being connected to at least one corresponding micro light-emitting diode or at least one photodiode via the optical connection terminal. A first light-shielding structure is disposed at least in the first gap portion, and in a direction parallel to the plane of the first substrate, the first light-shielding structure is disposed around the corresponding micro light-emitting diode; A second light-shielding structure is disposed in the second gap portion; A standard interface is provided at the electrical connection end.

2. The optical signal transceiver module according to claim 1, characterized in that, The standard interface includes at least one of UART, USART, SPI, I2S, CAN, MII, ETH, USB, and general-purpose I / O interfaces.

3. The optical signal transceiver module according to claim 2, characterized in that, The housing includes a first surface and a second surface disposed opposite to each other, the optical connection terminal includes a first opening penetrating the first surface, and the electrical connection terminal includes a second opening penetrating the second surface.

4. The optical signal transceiver module according to claim 1, characterized in that, The micro light-emitting diode includes a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer, the light-emitting layer, and the second semiconductor layer are stacked sequentially in a first direction, which is perpendicular to the plane of the first substrate. The second semiconductor layer is located on the side of the light-emitting layer away from the first substrate. The first gap is a first groove that penetrates the second semiconductor layer, the light-emitting layer and the first semiconductor layer.

5. The optical signal transceiver module according to claim 4, characterized in that, The photodiode includes a third electrode, a third semiconductor layer, a photoelectric conversion layer, a fourth semiconductor layer, and a fourth electrode. The third electrode is electrically connected to the third semiconductor layer, and the fourth electrode is electrically connected to the fourth semiconductor layer. The third semiconductor layer, the photoelectric conversion layer, and the fourth semiconductor layer are stacked sequentially in the first direction, and the fourth semiconductor layer is located on the side of the photoelectric conversion layer away from the first substrate. The second gap is a second groove that penetrates the first semiconductor layer, the light-emitting layer and the second semiconductor layer, and also penetrates the third semiconductor layer, the photoelectric conversion layer and the fourth semiconductor layer.

6. The optical signal transceiver module according to claim 5, characterized in that, The first light-shielding structure includes a first light-absorbing part, which fills the first groove; The second light-shielding structure includes a second light-absorbing part, which fills the second groove; the materials of both the first light-absorbing part and the second light-absorbing part include black resin.

7. The optical signal transceiver module according to claim 6, characterized in that, The first gap between the plurality of micro LEDs is interconnected, and the first gap between the plurality of micro LEDs is interconnected with the second gap; The first light-absorbing part and the second light-absorbing part are made of the same material and are an integral structure.

8. The optical signal transceiver module according to claim 1, characterized in that, The first light-shielding structure is in the form of a mesh, the mesh including mesh trunks and mesh openings, and the micro light-emitting diodes are at least partially located in the corresponding mesh openings; In a direction parallel to the plane of the first substrate, the mesh surrounds the corresponding micro light-emitting diode; The edge mesh of the first light-shielding structure is connected to the second light-shielding structure, and the edge mesh of the first light-shielding structure and the second light-shielding structure are arranged around the plurality of micro light-emitting diodes.

9. The optical signal transceiver module according to claim 5, characterized in that, The distances from the surface of the first light-shielding structure away from the first substrate and the distances from the surface of the second light-shielding structure away from the first substrate to the first substrate are both greater than the distances from the surface of the second semiconductor layer away from the first substrate to the first substrate. The distances from the surface of the first light-shielding structure away from the first substrate and the distances from the surface of the second light-shielding structure away from the first substrate to the first substrate are both greater than the distances from the surface of the fourth semiconductor layer away from the first substrate to the first substrate.

10. A communication device, characterized in that, Includes the optical signal transceiver module as described in any one of claims 1 to 9.

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