Transition ring for infrared detector chip packaging and infrared detector chip packaging structure

Abstract

This invention belongs to the field of infrared detector technology, specifically relating to a transition ring for infrared detector chip packaging and an infrared detector chip packaging structure. The transition ring includes a transition ring body with a top metallized soldering area on its top surface. An outer support extends outward from the outer wall of the transition ring body, and an external activated metallized area for electrically activating the getter is provided on the top surface of the outer support. A barrier structure is provided between the top metallized soldering area and the external activated metallized area. By placing the external activated metallized area on the outer support on the outer wall of the transition ring body and providing a barrier structure between the top metallized soldering area and the external activated metallized area, this invention effectively prevents the solder on the top metallized soldering area from overflowing into the external activated metallized area under high-temperature molten conditions, preventing short circuits between the two areas and further improving the yield of infrared chip packaging.

Description

Technical Field

[0001] This invention belongs to the field of infrared detector technology, specifically relating to a transition ring for infrared detector chip packaging and an infrared detector chip packaging structure. Background Technology

[0002] The infrared detector chip packaging structure mainly includes a chip, a transition ring, and a window. A top metallization soldering area and a bottom metallization soldering area are respectively set on the top and bottom surfaces of the transition ring, and these are hermetically welded to the window and chip through connecting layers, forming a sealed packaging cavity. To maintain the high vacuum level of the packaging cavity, a getter and internal electrode sheets are placed inside the packaging cavity, and an external activation metallization area is placed outside the packaging cavity. The getter is activated by the external activation metallization area being connected to the internal electrode sheets, thereby maintaining the long-term vacuum performance of the packaging cavity.

[0003] One existing solution involves providing an inwardly extending internal step 37 and an outwardly extending external support 33 on the inner and outer walls of the transition ring 3, respectively. A getter 31 and an internal electrode plate 34 are disposed on the internal step 37, and an external activation metallization 36 is disposed on the external support 33. Figure 1 As shown. Since the main component of the connection layer between the window 1 and the transition ring 3 is solder, the solder sheet will melt under high temperature during the packaging process and has fluidity. The top surfaces of the transition ring 3 and the outer support 33 are flush, and the top metallized soldering area 35 of the transition ring 3 is adjacent to the outer activated metallized area 36. Therefore, under the pressure of the window 1's own weight, the molten solder on the top surface of the transition ring 3 will not only flow along the top metallized soldering area 35, but will also overflow to the outer activated metallized area 36, ​​causing a short circuit between the top metallized soldering area 35 and the outer activated metallized area 36, ​​that is, a short circuit with the internal electrode sheet 34. When the outer activated metallized area 36 is energized, the short circuit prevents the activation of the internal getter 31, resulting in insufficient vacuum and performance degradation of the product. Summary of the Invention

[0004] The purpose of this invention is to provide a transition ring for infrared detector chip packaging and an infrared detector chip packaging structure, which can at least solve some of the defects in the prior art.

[0005] To achieve the above objectives, the technical solution of the present invention is a transition ring for packaging an infrared detector chip, comprising a transition ring body, wherein a top metallization soldering area is provided on the top surface of the transition ring body; an outer support is provided extending outward on the outer side wall of the transition ring body, wherein an external activation metallization area for electrically activating a getter is provided on the top surface of the external support, and a barrier structure is provided between the top metallization soldering area and the external activation metallization area.

[0006] As one implementation method, the top surface of the outer support is lower than or higher than the top surface of the transition ring body, and the barrier structure is a stepped structure formed between the outer support and the transition ring body.

[0007] As one embodiment, the top surface of the outer support is flush with the top surface of the transition ring body, and the outer support is provided with a groove or a protrusion. The external activated metallization area is disposed in the groove or on the protrusion, and the barrier structure is a stepped structure formed between the transition ring body and the groove or the protrusion.

[0008] As one implementation method, the top surface of the outer support is flush with the top surface of the transition ring body, and the barrier structure is an isolation groove, isolation wall or barrier area provided at the junction of the top surface of the outer support and the top surface of the transition ring body.

[0009] As one implementation, the barrier structure is arranged along its entire length; or the barrier structure is arranged in segments, and the length of each segment is not less than the length of the external activated metallization region on one side thereof.

[0010] As one implementation method, the barrier region is a solder barrier region or an insulating paste region.

[0011] As one embodiment, an inner step extending inward is provided on the inner sidewall of the transition ring body, and an internal electrode plate for carrying the getter is provided on the inner step, and the internal electrode plate is electrically connected to the external activated metallization region.

[0012] As one implementation method, the transition ring body, the internal step, and the external support are all made of ceramic material and are integrally formed; the internal electrode sheet is a metallized boss integrally formed with the internal step through high-temperature co-firing.

[0013] As one embodiment, a ceramic boss is provided on the internal step at the position corresponding to the metallized boss. The metallized boss is disposed on the corresponding ceramic boss, and the metallized boss, the ceramic boss and the internal step are integrally formed by high-temperature co-firing.

[0014] The present invention discloses an infrared detector chip packaging structure, comprising a chip and a window, and further comprising a transition ring for packaging the infrared detector chip as described in any of the above. The top metallized soldering area of ​​the top surface of the transition ring body is soldered to the window through a first connecting layer, and the bottom surface of the transition ring body is soldered to the chip through a second connecting layer to form a packaging cavity. A getter electrically connected to the external activated metallized area is disposed in the packaging cavity.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention sets the external activated metallization area on the outer support platform on the outer side wall of the transition ring body. By setting a barrier structure between the top metallization welding area and the external activated metallization area, the solder on the top metallization welding area can be effectively prevented from overflowing to the external activated metallization area in a high-temperature molten state, thus preventing a short circuit between the top metallization welding area and the external activated metallization area and further improving the yield of infrared chip packaging. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is an exploded view of the packaging structure of an infrared detector chip in an existing scheme; Figure 2 This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is a stepped structure of a boss type. Figure 3 This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is a recessed stepped structure. Figure 4 This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is a partially sunken stepped structure. Figure 5 This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is a partially sunken stepped structure. Figure 6 This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is a partially sunken stepped structure. Figure 7 This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is an isolation groove. Figure 8 This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is an isolation wall. Figure 9This invention provides a schematic diagram of a transition ring for packaging an infrared detector chip, wherein the outer part is an external support platform and the barrier structure is a barrier region. Figure 10 This is a schematic diagram of the structure of the window provided in an embodiment of the present invention; Figure 11 This is a schematic diagram of the chip structure provided in an embodiment of the present invention; Figure 12 This is a schematic diagram of the bonding between the transition ring for the infrared detector chip packaging and the circuit board, as provided in an embodiment of the present invention. In the diagram: 1. Window; 11. First welding area; 12. Light-transmitting area; 2. First connecting layer; 3. Transition ring; 31. Getter; 32. Transition ring body; 33. External support; 34. Internal electrode sheet; 35. Top metallized welding area; 36. External activated metallized area; 37. Internal step; 38. Step structure; 39. Isolation groove; 310. Isolation wall; 311. Barrier area; 4. Second connecting layer; 5. Chip; 51. Second welding area; 52. Effective element area; 53. Reference element area; 6. Circuit board; 7. Cleaver head. Detailed Implementation

[0018] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0019] In the description of this invention, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0020] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; in the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0021] like Figures 2-11As shown, this embodiment provides a transition ring 3 for infrared detector chip packaging, including a transition ring body 32. A top metallized soldering area 35 is disposed on the top surface of the transition ring body 32. An external support 33 extends outward from the outer side wall of the transition ring body 32. An external activated metallized area 36 for electrically activating a getter 31 is disposed on the top surface of the external support 33, and a barrier structure is provided between the top metallized soldering area 35 and the external activated metallized area 36. In this embodiment, the external activated metallized area 36 is disposed on the external support 33 on the outer side wall of the transition ring body 32. By providing a barrier structure between the top metallized soldering area 35 and the external activated metallized area 36, ​​the solder on the top metallized soldering area 35 can be effectively prevented from overflowing into the external activated metallized area 36 under high-temperature molten conditions, preventing short circuits between the top metallized soldering area 35 and the external activated metallized area 36, ​​and further improving the yield of infrared chip wafer-level packaging.

[0022] In some embodiments, the top surface of the outer support 33 is lower or higher than the top surface of the transition ring body 32, and the barrier structure is a stepped structure 38 formed between the outer support 33 and the transition ring body 32. By raising or lowering the outer support 33 as a whole to form the stepped structure 38, the distance between the top metallized welding area 35 and the external activated metallized area 36 can be increased, preventing solder from overflowing into the external activated metallized area 36. Figure 2 As shown, the top surface of the entire outer support platform 33 is raised to form a boss-like stepped structure 38; as Figure 3 As shown, the top surface of the entire external support platform 33 is sunken to form a sunken stepped structure 38.

[0023] In other embodiments, the top surface of the outer support 33 is flush with the top surface of the transition ring body 32, and the outer support 33 is provided with a groove or a protrusion. The external activated metallization area 36 is disposed in the groove or on the protrusion, and the barrier structure is a stepped structure 38 formed between the transition ring body 32 and the groove or the protrusion. Figures 4-6 As shown, by making the area on the outer support 33 corresponding to the external activated metallization area 36 into a stepped structure 38, the distance between the top metallization welding area 35 and the external activated metallization area 36 can be increased, thereby preventing the solder between the top metallization welding area 35 and the window 1 from overflowing to the external activated metallization area 36 in a high-temperature molten state. In addition, by setting grooves only on the outer support 33 at the position corresponding to the external activated metallization area 36 or in some adjacent areas, the width of the transition ring body 32 below the metallization welding area can be guaranteed, making the strength of the transition ring 3 higher after high-temperature sintering, thereby improving the yield and avoiding cracks in the transition ring 3 during high-temperature sintering.

[0024] In some embodiments, the top surface of the outer support 33 is flush with the top surface of the transition ring body 32, and the barrier structure is an isolation groove 39, an isolation wall 310, or a barrier area 311 provided at the junction of the top surface of the outer support 33 and the top surface of the transition ring body 32. By providing an isolation groove 39, an isolation wall 310, or a barrier area 311 at the junction of the top surface of the outer support 33 and the top surface of the transition ring body 32 as a barrier structure, the solder between the top metallized welding area 35 and the window slab 1 cannot directly cross the isolation groove 39, the isolation wall 310, or the barrier area 311 to contact the external activated metallized area 36 when it melts at high temperature, thus preventing solder overflow.

[0025] like Figure 7 As shown, a shallow groove is provided at the junction of the top surface of the outer support 33 and the top surface of the transition ring body 32 as an isolation groove 39; as Figure 8 As shown, a low wall 310 is provided at the junction of the top surface of the outer foundation 33 and the top surface of the transition ring body 32; as shown Figure 9 A barrier zone 311 of a certain width is provided at the junction of the top surface of the external support 33 and the top surface of the transition ring body 32.

[0026] In this embodiment, the barrier structure is arranged along its entire length; or the barrier structure is arranged in segments, and the length of each segment is not less than the length of the external activated metallization region on one side. For example... Figures 7-9 As shown, the barrier structure is arranged along the entire length between the external activated metallization area 36 and the top metallization welding area 35, so that all external activated metallization areas 36 are located on the same side of the barrier structure; the barrier structure can also be arranged in segments between the top metallization welding area 35 and all external activated metallization areas 36 on one side, with each external activated metallization area 36 and the top metallization welding area 35 having a section of barrier structure, and the length of the barrier structure completely covering the length range of the external activated metallization area 36, ​​ensuring that there is no straight overflow channel connecting the external activated metallization area 36 and the top metallization welding area 35.

[0027] Furthermore, the barrier area 311 can be a solder barrier area or an insulating paste area. In this embodiment, the transition ring body 32 and the outer support 33 can be made of ceramic material, which does not wet solder. By spacing the outer activated metallization area 36 and the top metallized welding area 35 at a certain distance, the area between the outer activated metallization area 36 and the top metallized welding area 35 can serve as the solder barrier area 311, providing a good barrier effect. Alternatively, the outer activated metallization area 36 and the top metallized welding area 35 can be spaced at a certain distance, and an insulating paste can be printed on the surface of the area between the outer activated metallization area 36 and the top metallized welding area 35, providing a good barrier effect and preventing solder overflow without reducing or increasing the height difference.

[0028] Furthermore, an inner step 37 extending inward is provided on the inner sidewall of the transition ring body 32. An internal electrode plate 34 for carrying the getter is provided on the inner step 37, and the internal electrode plate 34 is electrically connected to the external activated metallization region 36. By energizing the external activated metallization region 36 outside the welded encapsulation structure cavity, the internal electrode plate 34 inside the cavity can be energized, thereby activating the getter 31. The getter material on the surface of the getter 31 is heated by electricity and exerts its gettering effect, absorbing the residual gas inside the cavity and creating a high vacuum inside the encapsulation structure cavity. Each getter 31 has its two ends respectively disposed on two internal electrode plates 34, and the two internal electrode plates 34 are respectively connected to two external activated metallization regions 36 via metal wires. The getter 31 can be made of getter materials such as barium aluminum alloy, zirconium vanadium iron, and zirconium aluminum.

[0029] Preferably, the transition ring body 32, the internal step 37, and the external support 33 are all made of ceramic material and integrally formed. The internal electrode plate 34 is a metallized boss integrally formed with the internal step 37 through high-temperature co-firing. This not only simplifies the structure but also simplifies the processing technology, reduces processing costs, and shortens the processing cycle, facilitating mass production. The two ends of the getter 31 are electrically connected to the two metallized bosses, and the main body of the getter 31 is suspended above the internal step 37. This allows most of the heat generated by the getter 31 to be used for self-heating, enabling it to quickly reach and maintain the activation temperature, effectively avoiding activation failure caused by heat loss, and improving the activation efficiency and reliability of the getter 31. In this embodiment, the internal electrode plate 34 can also be formed by setting an internal metallized area on the internal step 37, and then setting a metal gasket on the internal metallized area.

[0030] Furthermore, the metallized boss can be a tungsten metallized boss or a molybdenum-manganese metallized boss. A conductive plating layer can also be provided on the top surface of the metallized boss, and the two ends of the getter 31 can be connected to the conductive plating layer to improve the reliability of the electrical connection and provide protection. Specifically, the conductive plating layer can be any one of Ni / Au layer, Ni layer, Ni / Pd / Au layer, or Ni / Pd layer.

[0031] In some embodiments, a ceramic boss is provided on the internal step 37 at the position corresponding to the metallized boss. The metallized boss is disposed on the corresponding ceramic boss, and the metallized boss, the ceramic boss, and the internal step 37 are integrally formed by high-temperature co-firing. By adding the ceramic boss, the vacuum insulation gap between the bottom surface of the main body of the getter 31 and the top surface of the internal step 37 can be increased, further improving the heat insulation effect. The height of the ceramic boss is 20~100μm. In other embodiments, a ceramic groove or a direct hollowing-out design is provided on the area of ​​the internal step 37 corresponding to the main body of the getter 31. That is, a ceramic groove or a direct hollowing-out design is provided on the area of ​​the internal step 37 between the two metallized bosses connecting the two ends of the getter 31, which can further improve the heat insulation effect and prevent the heat from being conducted to the transition ring body 32 during getter activation, thus avoiding insufficient activation.

[0032] In this embodiment, the transition ring body 32 is formed by stacking and sintering multiple layers of ceramic green sheets. An internal step 37 and an external support 33 are formed through a ceramic green sheet patterning process. An isolation groove 39 or an isolation wall 310 can also be formed simultaneously. Furthermore, a metal wire is embedded inside one layer of the ceramic green sheet, or the metal wire is printed on the top surface of the lower ceramic green sheet in two adjacent ceramic green sheets. A porcelain slurry layer is printed on the area of ​​the metal wire used to connect with the upper ceramic green sheet. Then, all the ceramic green sheets are stacked and sintered to form the transition ring body 32. By printing the metal wire on the upper surface of one layer of the ceramic green sheet and printing a porcelain slurry layer on its surface, the connection strength between the metal wire and the upper ceramic green sheet can be significantly enhanced. Alternatively, embedding the metal wire inside one layer of the ceramic green sheet allows the metal wire to be encapsulated by dense ceramic material, thereby avoiding seams after the multiple ceramic green sheets are stacked and sintered. This ensures reliable electrical connection while maintaining the airtightness of the encapsulation structure. Preferably, the thickness of the slurry layer is 5-15 μm, and the slurry layer preferably uses the same ceramic powder as the ceramic green sheet substrate to ensure that the shrinkage rate matches during subsequent sintering and to avoid cracking.

[0033] In some embodiments, the internal electrode plate 34, the external activated metallization area 36, ​​and the metal wire are disposed on the same ceramic green sheet, using a single-layer ceramic surface wiring method. This not only completely eliminates the processes of creating, filling, and aligning metallized vias, simplifying the manufacturing process, but also improves the electrical connection reliability and production yield of the product. In other embodiments, one of the internal electrode plate 34 and the external activated metallization area 36 is disposed on the same ceramic green sheet as the metal wire, while the other is disposed on a different ceramic green sheet. A metallized via is provided on the ceramic green sheet between the two to connect them. This method simplifies cross-layer wiring by using fewer vias. By disposing of one of the internal electrode plate 34 and the external activated metallization area 36 on the same ceramic green sheet as the metal wire, only the ceramic green sheet between the other internal electrode plate 34 and the external activated metallization area 36 and the metal wire needs to be fabricated with a metallized via for cross-layer connection. This significantly reduces the number of metallized vias, simplifies the drilling process, significantly reduces process complexity, and lowers processing costs. In some embodiments, the internal electrode sheet 34, the external activated metallization region 36, and the metal wire are disposed on three different ceramic green sheets, and the ceramic green sheet between the internal electrode sheet 34 and the metal wire is provided with a metallization via for connecting the two, and the ceramic green sheet between the external activated metallization region 36 and the metal wire is provided with a metallization via for connecting the two.

[0034] In this embodiment, a through-hole is provided in the middle of the transition ring 3. The cross-sectional profile of the through-hole is a closed shape, which is formed by several convex curve segments smoothly connected end to end, or by several straight lines and several convex curve segments smoothly connected end to end. There are no sharp corners, eliminating corner diffraction and stress concentration areas, improving imaging contrast and signal-to-noise ratio, as well as the reliability of the packaging structure. In some embodiments, the closed shape is circular, which can be used for effective element arrays of all shapes, completely eliminating corner diffraction interference and ensuring uniform stress distribution. It also naturally matches the circular imaging ring of the optical lens, ensuring uniform illumination of all array pixels. Furthermore, the diameter of the circular closed shape is greater than the maximum straight-line distance between any two points on the outer periphery of the effective element array on the chip 5 in the horizontal plane. In other embodiments, the closed shape is elliptical, particularly suitable for rectangular effective element arrays with a large aspect ratio. Furthermore, the major axis of the elliptical closed shape is greater than the long side length of the rectangular effective element array, and the minor axis is greater than the short side length, which can further reduce the volume of the sealed cavity and lower the getter load 31. In other embodiments, the closed shape is a rounded polygon, which can match the shape of the effective element array, thereby improving the space utilization of the light-transmitting aperture. Furthermore, the radius of the circle containing the rounded corners of the rounded polygon is greater than 1 / 5 of the long side dimension of the circumscribed rectangle of the rounded polygon to ensure a smooth transition. Furthermore, the inner wall of the light-transmitting aperture is provided with multiple annular steps, and the aperture of the light-transmitting aperture gradually decreases along the light incident direction, thereby forming an aperture stop, optimizing the uniformity of image illumination, suppressing stray light, and integrating optical beam limiting function. Preferably, the inner wall of the light-transmitting aperture is coated with an matting coating to improve the stray light suppression effect.

[0035] This embodiment also provides an infrared detector chip packaging structure, including a chip 5 and a window 1, and a transition ring 3 for packaging the infrared detector chip as described in any of the above embodiments. The top metallized soldering area 35 of the top surface of the transition ring body 32 is soldered to the window 1 through a first connecting layer 2, and the bottom surface of the transition ring body 32 is soldered to the chip 5 through a second connecting layer 4, forming a packaging cavity. A getter 31 electrically connected to the external activated metallized area 36 is disposed inside the packaging cavity. By hermetically welding the window 1 and the transition ring 3 through the first connecting layer 2, and by hermetically welding the chip 5 and the transition ring 3 through the second connecting layer 4, a sealed packaging cavity is formed, and the getter 31 is encapsulated inside the packaging cavity. The orthogonal projection of the light-transmitting hole on the transition ring 3 onto the chip 5 covers the effective element array on the chip 5. At the same time, the transition ring 3 increases the distance between the window 1 and the chip 5, reducing imaging dark spots caused by minor defects on the surface of the window 1 and dust particles.

[0036] Because the wedge head 7 used for wire bonding is cylindrical with a conical head, the height of window 1 increases after the window 1 and chip 5 are soldered together via transition ring 3 to form the infrared detector chip package structure. When the infrared detector chip package structure is assembled onto the back-end circuit board 6 for wire bonding, the increased window height interferes with the wedge head 7, causing window 1 to break. Figure 12 As shown, at the location where wire bonding is required, the transition ring 3 is designed as a stepped structure 38 on one side of the package cavity, thereby avoiding the cylindrical conical part of the cleaver head 7, and increasing the height distance between the window 1 and the chip 5 without increasing structural complexity and process cost.

[0037] like Figure 10 As shown, the window 1 has a light-transmitting area 12 and a first welding area 11. The light-transmitting area 12 is located in the middle of the window 1, allowing light to pass through and illuminate the chip 5. The first welding area 11 is a ring structure arranged around the light-transmitting area 12 and is welded to the top metallized welding area 35 on the top surface of the transition ring body 32 through the first connecting layer 2. Specifically, the substrate material of the window 1 can be silicon, germanium, or zinc selenide, etc. The first welding area 11 is formed by depositing a metal material on the substrate of the window 1 to form a metal coating. The metal material can be Cr, Ni, Au, etc. Preferably, an infrared anti-reflection structure is provided on the top and / or bottom surface of the window 1 substrate of the light-transmitting area 12 to increase the infrared light transmittance, thereby improving the sensitivity of the detector. Specifically, the infrared anti-reflection structure can be achieved by depositing an anti-reflection film such as ZnS, AlF3, or MgF2 on the substrate of the window 1, or by micro-etching a micro-surface structure on the substrate of the window 1 to increase the transmittance of the window 1.

[0038] like Figure 11 As shown, chip 5 has an effective element region 52, a reference element region 53, and a second bonding region 51. The effective element region 52 and the reference element region 53 are located within the area enclosed by the second bonding region 51. The effective element array is arranged in the effective element region 52 to receive thermal radiation projected from the object and convert the optical signal into an electrical signal. Non-effective elements such as blind elements and reference elements are arranged in the reference element region 53 on one side of the effective element region 52. Its structure is the same as the effective elements, but it cannot receive infrared radiation from the external target due to obstruction. It is used to correct and improve the imaging quality. A bottom metallization bonding region is provided on the bottom surface of the transition ring 3, and the bottom metallization bonding region is bonded to the second bonding region 51. The second bonding region 51 is formed by plating a metal material on the chip 5 to form a metal coating. The metal material includes, but is not limited to, Cu / Ni / Au, Cu / Ni / Au / Sn, and Cu / Ni / Sn.

[0039] In this embodiment, the first connecting layer 2 and the second connecting layer 4 are metal solders, which are melted and used to connect the window 1 and the transition ring 3, and the transition ring 3 and the chip 5, respectively. The metal solders include, but are not limited to, indium silver solder, gold-tin solder, and tin-silver-copper solder.

[0040] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A transition ring for packaging an infrared detector chip, comprising a transition ring body, wherein a top metallized solder area is provided on the top surface of the transition ring body; characterized in that: An external support is provided on the outer side wall of the transition ring body, and an external activation metallization area for electrically activating the getter is provided on the top surface of the external support. A barrier structure is provided between the top metallization welding area and the external activation metallization area.

2. The transition ring for packaging an infrared detector chip as described in claim 1, characterized in that: The top surface of the outer support is lower or higher than the top surface of the transition ring body, and the barrier structure is a stepped structure formed between the outer support and the transition ring body.

3. The transition ring for packaging an infrared detector chip as described in claim 1, characterized in that: The top surface of the outer support is flush with the top surface of the transition ring body. The outer support is provided with a groove or a protrusion. The external activated metallization area is provided in the groove or on the protrusion. The barrier structure is a stepped structure formed between the transition ring body and the groove or the protrusion.

4. The transition ring for packaging an infrared detector chip as described in claim 1, characterized in that: The top surface of the outer support is flush with the top surface of the transition ring body, and the barrier structure is an isolation groove, isolation wall or barrier area set at the junction of the top surface of the outer support and the top surface of the transition ring body.

5. The transition ring for packaging an infrared detector chip as described in claim 4, characterized in that: The barrier structure is arranged along its entire length; or the barrier structure is arranged in segments, and the length of each segment is not less than the length of the external activated metallization region on one side thereof.

6. The transition ring for packaging an infrared detector chip as described in claim 4, characterized in that: The barrier area is either a solder barrier area or an insulating paste area.

7. The transition ring for packaging an infrared detector chip as described in any one of claims 1-6, characterized in that: The inner wall of the transition ring body is provided with an inner step extending inward, and an internal electrode plate for carrying the getter is provided on the inner step. The internal electrode plate is electrically connected to the external activated metallization region.

8. The transition ring for packaging an infrared detector chip as described in claim 7, characterized in that: The transition ring body, the internal step, and the external support are all made of ceramic material and are integrally formed; the internal electrode sheet is a metallized boss integrally formed with the internal step through high-temperature co-firing.

9. The transition ring for packaging an infrared detector chip as described in claim 8, characterized in that: A ceramic protrusion is provided on the internal step at the position corresponding to the metallized protrusion. The metallized protrusion is disposed on the corresponding ceramic protrusion. The metallized protrusion, the ceramic protrusion and the internal step substrate are integrally formed by high-temperature co-firing.

10. An infrared detector chip packaging structure, comprising a chip and a window, characterized in that: It also includes a transition ring for packaging an infrared detector chip according to any one of claims 1-9, wherein the top metallized soldering area on the top surface of the transition ring body is soldered to the window through a first connecting layer, and the bottom surface of the transition ring body is soldered to the chip through a second connecting layer to form a packaging cavity; a getter electrically connected to the external activated metallized area is disposed in the packaging cavity.

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