Semiconductor structure, method of manufacturing the same, and display device

Abstract

This application provides a semiconductor structure and its fabrication method, as well as a display device, relating to the technical field of light-emitting elements. The semiconductor structure includes a light-emitting element, a first doped layer having protrusions with growth surfaces, a light-emitting layer disposed on the protrusions and connected to the first doped layer via the protrusions, a second doped layer disposed on the surface of the light-emitting layer, a reflective layer having a reflective surface covering the growth surface at least through the reflective surface and contacting the surfaces of the light-emitting layer and the second doped layer, and a second electrode and a first electrode respectively connected to the second doped layer and the first doped layer. This application can solve the problem of poor quality micro-light-emitting diodes due to etching defects such as over-etching on the sidewalls.

Description

Technical Field

[0001] This application relates to the field of display elements, and more particularly to semiconductor structures and their fabrication methods, and display devices. Background Technology

[0002] Micro-LEDs are semiconductor structures that offer advantages such as high brightness, high contrast, low power consumption, and long lifespan. The fabrication of micro-LEDs typically involves dry etching to remove material and form the sidewalls.

[0003] However, during the material removal process using dry etching, etching defects such as over-etching can easily occur on the sidewalls of the micro LEDs, resulting in poor quality. Summary of the Invention

[0004] This application provides a semiconductor structure and its fabrication method, as well as a display device, to solve the problem of poor quality of micro light-emitting diodes due to etching defects such as over-etching on the sidewalls.

[0005] The semiconductor structure provided in this application includes a light-emitting element, wherein the light-emitting element comprises:

[0006] A first doped layer, wherein the first doped layer is provided with a protrusion, the protrusion having a growth surface;

[0007] A light-emitting layer is disposed on the protrusion and is connected to the first doped layer through the protrusion;

[0008] A second doped layer is disposed on the surface of the light-emitting layer;

[0009] A reflective layer having a reflective surface, the reflective layer covering the growth surface at least through the reflective surface and contacting the surfaces of the light-emitting layer and the second doped layer;

[0010] And, respectively, a second electrode and a first electrode connected to the second doped layer and the first doped layer.

[0011] By employing the above technical solution, during the fabrication of the semiconductor structure, a first doped layer can be formed on the substrate using selective region growth (SGR), resulting in a first doped layer with protrusions having growth surfaces. A light-emitting layer can then be formed on these protrusions, electrically connected to the first doped layer through the protrusions, thereby achieving the fabrication of the light-emitting layer.

[0012] Subsequently, a reflective layer can be formed in the first doped layer. The reflective layer has a reflective surface and covers the growth surface at least through the reflective surface. Thus, the growth surface can be used as the basis for the preparation of the reflective layer. A second electrode is formed on the surface of the reflective layer away from the first doped layer. The second electrode is electrically connected to the light-emitting layer, thereby realizing the preparation of the semiconductor structure.

[0013] Compared with related technologies, the embodiments of this application have a first doped layer with a protrusion and a growth surface. The first doped layer can be selectively grown, so that the growth surface can be used as a basis for forming at least one light-emitting layer and a reflective layer. This eliminates the need to remove the material of the first doped layer through a dry etching process, thereby reducing the possibility of etching defects such as over-etching on the sidewalls of the micro light-emitting diode and improving the quality of the micro light-emitting diode.

[0014] In some possible implementations, there are multiple light-emitting elements, and the multiple light-emitting elements include a first light-emitting element;

[0015] In the first light-emitting element, an extension is provided on the surface of the first doped layer facing the second electrode; the first end of the extension is disposed in the first doped layer, and the second end of the extension is electrically connected to the protrusion.

[0016] The first portion of the light-emitting layer covers the protrusion, and the second portion of the light-emitting layer covers the extension.

[0017] In some possible implementations, the first light-emitting element includes a second doped layer; the inner surface of the second doped layer is in contact with the protrusion and the extension, and the outer surface of the second doped layer is disposed parallel to the growth surface;

[0018] The reflective layer covers the outer surface of the second doped layer, the reflective layer is arranged parallel to the growth surface, and the reflective layer is electrically connected to the light-emitting layer through the second doped layer.

[0019] In some possible implementations, the first light-emitting element includes a planarization layer that covers the surface of the reflective layer opposite to the first doped layer;

[0020] The planarization layer is provided with a communication port facing the reflective layer; at least a portion of the second electrode is disposed in the communication port, and the second electrode is electrically connected to the surface of the reflective layer opposite to the second doped layer through the communication port;

[0021] Alternatively, the communication port extends at least through the planarization layer and the reflective layer, at least a portion of the second electrode is disposed within the communication port, and the second electrode is electrically connected to the second doped layer through the communication port.

[0022] In some possible implementations, there are multiple light-emitting elements, and the multiple light-emitting elements include a second light-emitting element;

[0023] In the second light-emitting element, the protrusion is provided with a bearing surface, and the bearing surface is connected to the end of the growth surface away from the first doped layer.

[0024] In some possible implementations, the second light-emitting element includes a second doped layer;

[0025] The light-emitting layer is disposed on the support surface, and the surface of the light-emitting layer opposite to the support portion is electrically connected to the second doped layer.

[0026] In some possible implementations, the second light-emitting element includes an insulating layer;

[0027] The first portion of the isolation layer covers the growth surface of the protrusion, and the second portion of the isolation layer covers the second doped layer; the outer surface of the isolation layer is arranged parallel to the growth surface.

[0028] In some possible implementations, a first portion of the reflective layer covers a first portion of the insulating layer, and a second portion of the reflective layer covers a second portion of the insulating layer;

[0029] The second light-emitting element is provided with a communication port, which at least penetrates the second part of the reflective layer and the second part of the insulating layer;

[0030] At least a portion of the second electrode is disposed within the communication port, and the second electrode is electrically connected to the second doped layer through the communication port.

[0031] In some possible implementations, the semiconductor structure includes a driving backplate disposed on the side of the second electrode away from the first doped layer;

[0032] The first output terminal of the driving backplate is provided with a first electrode, and the driving backplate is electrically connected to the first doped layer through the first electrode. The second output terminal of the driving backplate is electrically connected to the second electrode.

[0033] In some possible implementations, the semiconductor structure has a display area and a non-display area surrounding the display area;

[0034] The light-emitting element is located within the display area; the first electrode is located within the non-display area, and at least a portion of the first electrode is arranged in the same layer as the first doped layer.

[0035] This application provides a method for fabricating a semiconductor structure, including forming a light-emitting element, comprising:

[0036] A first doped layer is formed on a substrate by selective region growth, the first doped layer having protrusions, and the protrusions having growth surfaces;

[0037] A light-emitting layer is formed on the protrusion, and the light-emitting layer is electrically connected to the first doped layer through the protrusion;

[0038] A reflective layer is formed in the first doped layer, the reflective layer having a reflective surface, and the reflective layer at least covers the growth surface through the reflective surface;

[0039] A second electrode is formed on the surface of the reflective layer away from the first doped layer, and the second electrode is electrically connected to the light-emitting layer.

[0040] In some possible implementations, there are multiple light-emitting elements, and the multiple light-emitting elements include a first light-emitting element;

[0041] When forming the first light-emitting element, a first doped layer is formed on the substrate, including:

[0042] The first doped layer is formed on the substrate;

[0043] An extension is formed on the surface of the first doped layer away from the substrate;

[0044] The protrusion is formed at the end of the extension that is away from the base of the first doped layer.

[0045] In some possible implementations, a light-emitting layer is formed on the protrusion, including:

[0046] The light-emitting layer is deposited in the first doped layer, a first portion of the light-emitting layer covers the protrusion, and a second portion of the light-emitting layer covers the extension;

[0047] After forming the light-emitting layer, the process further includes:

[0048] A second doped layer is formed on the surface of the light-emitting layer away from the first doped layer. The inner surface of the second doped layer is in contact with the protrusion and the extension, and the outer surface of the second doped layer is parallel to the growth surface.

[0049] The reflective layer covers the outer surface of the second doped layer, the reflective layer is arranged parallel to the growth surface, and the reflective layer is electrically connected to the light-emitting layer through the second doped layer.

[0050] In some possible implementations, there are multiple light-emitting elements, and the multiple light-emitting elements include a second light-emitting element;

[0051] When forming the second light-emitting element, a first doped layer is formed on the substrate, including:

[0052] The first doped layer is formed on the substrate;

[0053] The protrusion is formed on the surface of the first doped layer away from the substrate. The protrusion is provided with a bearing surface, which is connected to the end of the growth surface away from the first doped layer.

[0054] In some possible implementations, after forming the first doped layer, the following steps are included:

[0055] The light-emitting layer is formed on the bearing surface;

[0056] A second doped layer is formed on the surface of the light-emitting layer away from the first doped layer;

[0057] An isolation layer is formed, wherein a first portion of the isolation layer covers the growth surface of the protrusion, and a second portion of the isolation layer covers the second doped layer; the outer surface of the isolation layer is arranged parallel to the growth surface.

[0058] In some possible implementations, including:

[0059] When the first doped layer is formed on the substrate, a first electrode base is formed on the substrate, and the first electrode base is electrically connected to the first doped layer;

[0060] Forming the second electrode includes:

[0061] A second electrode base is formed, the first part of which is disposed corresponding to the first doped layer and can be connected to both sides of the light-emitting layer respectively.

[0062] The second part of the second electrode base is configured to correspond to the first electrode base;

[0063] A portion of the second electrode base is removed, the first portion of the second electrode base forms the second electrode, and the second portion of the second electrode base, together with the first electrode base, forms the first electrode.

[0064] After forming the second electrode, the process also includes:

[0065] The driving backplate is connected to the side of the second electrode away from the first doped layer. The driving backplate is electrically connected to the first doped layer through the first electrode. The second output terminal of the driving backplate is electrically connected to the second electrode.

[0066] This application also provides a display device including the semiconductor structure described in any of the above embodiments.

[0067] Since the display device includes any of the above-mentioned semiconductor structures, the advantages of the display device including any of the above-mentioned semiconductor structures can be specifically referred to in the relevant description above, and will not be repeated here. Attached Figure Description

[0068] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0069] Figure 1 A schematic diagram of a semiconductor structure including a first light-emitting element provided for an embodiment of this application;

[0070] Figure 2 A schematic diagram of a semiconductor structure including a first light-emitting element, provided as an embodiment of this application;

[0071] Figure 3 This is a schematic diagram of the structure of the first light-emitting element provided in an embodiment of this application;

[0072] Figure 4 A top view of the protrusion in the first light-emitting element provided in an embodiment of this application;

[0073] Figure 5 A schematic diagram of a semiconductor structure including a second light-emitting element provided for an embodiment of this application;

[0074] Figure 6 This is a schematic diagram of the structure of the second light-emitting element provided in an embodiment of this application;

[0075] Figure 7 This is a top view of the protrusion in the second light-emitting element provided in an embodiment of this application;

[0076] Figure 8 This is a schematic diagram of the structure of the substrate and mask provided in the embodiments of this application;

[0077] Figure 9 This application provides a structural schematic diagram of the protrusion forming the first light-emitting element according to an embodiment of the present application;

[0078] Figure 10 This application provides a schematic diagram of the structure forming the light-emitting layer in the first light-emitting element;

[0079] Figure 11 This application provides a schematic diagram of the structure forming the second doped layer, the transparent conductive layer, and the reflective layer in the first light-emitting element;

[0080] Figure 12This application provides a schematic diagram of the structure forming the planarization layer in the first light-emitting element;

[0081] Figure 13 This application provides a schematic diagram of the structure forming the communication port in the first light-emitting element;

[0082] Figure 14 This is a schematic diagram of the structure of the first light-emitting element in an embodiment of the present application, showing the corresponding positions of the first electrode base and the communication port.

[0083] Figure 15 A schematic diagram showing the formation of a second electrode in a first light-emitting element provided in an embodiment of this application;

[0084] Figure 16 A schematic diagram showing the removal of the substrate and thinning of the first doped layer in the first light-emitting element provided in an embodiment of this application;

[0085] Figure 17 This is a schematic diagram of the structure forming the protrusion in the second light-emitting element according to an embodiment of this application;

[0086] Figure 18 This application provides a schematic diagram of the structure forming the light-emitting layer in the second light-emitting element;

[0087] Figure 19 This application provides a schematic diagram of the structure forming the second doped layer in the second light-emitting element;

[0088] Figure 20 This application provides a schematic diagram of the structure forming the isolation layer and reflective layer in the second light-emitting element;

[0089] Figure 21 This application provides a schematic diagram of the structure forming the planar layer and the communication port in the second light-emitting element.

[0090] Explanation of reference numerals in the attached figures:

[0091] 10. Light-emitting element; 20. Substrate;

[0092] 100. First doped layer;

[0093] 110. Protrusion; 111. Growth surface; 112. Bearing surface; 120. Extension; 130. Reinforcing layer; 140. Mask plate;

[0094] 200. Emissive layer;

[0095] 300, Second doped layer;

[0096] 400. Reflective layer;

[0097] 410. Transparent conductive layer; 420. Isolation layer;

[0098] 500, leveling layer;

[0099] 510. Connecting port; 511. Conductive metal;

[0100] 600, Second electrode;

[0101] 700, Drive Backplane;

[0102] 800, First electrode.

[0103] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0104] As described in the background section, the fabrication of micro-light-emitting diodes (LEDs) typically requires the use of dry etching to remove material and form the sidewalls of the LED. In the dry etching process, a material layer is first formed on a substrate, and then the material is removed using dry etching, allowing the remaining material layer to form the micro-LED.

[0105] It is easy to understand that when the material is removed by dry etching, a chemical reaction needs to occur in the material. This makes it necessary to control the etching thickness and etching position more accurately. When the etching thickness and etching position are off, etching defects such as over-etching are likely to occur on the sidewalls of the micro LED, resulting in poor quality of the micro LED.

[0106] To address the aforementioned technical problems, embodiments of this application provide a semiconductor structure, a method for fabricating the same, and a display device. During the fabrication of the semiconductor structure, a first doped layer can be formed on a substrate using selective region growth (SGR), such that the first doped layer has protrusions with growth surfaces. A light-emitting layer can then be formed on the protrusions, and the light-emitting layer is electrically connected to the first doped layer through the protrusions to achieve the fabrication of the light-emitting layer.

[0107] Subsequently, a reflective layer can be formed in the first doped layer. The reflective layer has a reflective surface and covers the growth surface at least through the reflective surface. Thus, the growth surface can be used as the basis for the preparation of the reflective layer. A second electrode is formed on the surface of the reflective layer away from the first doped layer. The second electrode is electrically connected to the light-emitting layer, thereby realizing the preparation of the semiconductor structure.

[0108] It should be noted that Selective Area Growth (SAG) technology is considered a potential solution. SAG technology can fabricate miniature light-emitting diodes (hereinafter referred to as Micro-LED devices) without damaging the sidewalls by epitaxial growth in a specific area.

[0109] In the fabrication of micro LEDs, SAG (Semiconductor Aperture Growth) technology not only reduces sidewall damage but also improves device integration, thereby enhancing display resolution and overall performance. Furthermore, by optimizing epitaxial growth conditions, higher consistency and lower manufacturing costs can be achieved, accelerating the commercialization of Micro-LED display technology. SAG technology is expected to play a crucial role in next-generation high-resolution displays such as 8K TVs, virtual reality (VR), and augmented reality (AR) devices.

[0110] The advantages of SAG (Selective Agglomeration) technology in fabricating micro-LEDs include: SAG technology exhibits numerous advantages in the fabrication of Micro-LEDs. By growing materials directly in specific regions, SAG technology avoids damage to the LED sidewalls caused by traditional dry etching processes. This is particularly important for miniaturized Micro-LEDs, as the impact of sidewall damage on device performance increases significantly with size reduction. SAG technology effectively avoids this problem, thereby improving the performance and lifespan of Micro-LEDs.

[0111] Secondly, in SAG technology, materials grow only within predefined aperture areas, avoiding the significant material waste caused by etching in traditional methods. This efficient material utilization not only reduces costs but also enhances the sustainability of resource use.

[0112] SAG (Sequencing Aperture Growth) technology allows for the growth of high-quality gallium nitride (GaN) layers in localized areas by controlling the mask and growth rate, reducing crystal defects. Precise control of growth conditions enables crystal growth with high uniformity and low defect density in these localized areas, which is crucial for improving the optoelectronic performance of Micro-LEDs. Simultaneously, SAG technology offers greater design flexibility, allowing for selective material growth on the substrate according to specific application requirements. This flexibility makes SAG technology more advantageous and adaptable in fabricating Micro-LED arrays of different sizes and shapes.

[0113] SAG technology can control the growth rate of each facet by changing the V / III ratio of the precursor, thus realizing GaN / InGaN (indium gallium nitride) devices with different morphologies. Finally, SAG technology excels in the efficient integration of multicolor light-emitting devices, especially for InGaN quantum wells. By adjusting the indium content in the InGaN blocks, the emission of red, green, and blue light can be achieved in a single crystal structure.

[0114] This method can greatly simplify the fabrication process of multicolor Micro-LEDs and improve photoelectric conversion efficiency. In summary, the main advantages of selective region growth (SAG) technology in Micro-LED fabrication are reflected in avoiding sidewall damage, efficient material utilization, high-quality crystal growth, flexibility and design freedom, and efficient integration of multicolor light-emitting devices. These advantages make SAG technology a significant potential driver for the development and practical application of Micro-LED technology.

[0115] In other words, compared with related technologies, the embodiments of this application, by making the first doped layer have protrusions and the protrusions have growth surfaces, enable the first doped layer to be selectively grown, so that the growth surface can be used as a basis for forming at least one of the light-emitting layer and the reflective layer, thereby eliminating the need to remove the material of the first doped layer through a dry etching process, thereby reducing the possibility of etching defects such as over-etching on the sidewalls of the micro light-emitting diode and improving the quality of the micro light-emitting diode.

[0116] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0117] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0118] Reference Figures 1-3 ,as well as Figure 5 and Figure 6The semiconductor structure provided in this application has a display area and a non-display area connected to the display area. The display area may have multiple light-emitting elements 10, which form a display image. The non-display area may be provided with structures such as wiring and connection terminals, which can be used to connect to the light-emitting elements 10 to realize the wiring and driving of the multiple light-emitting elements 10 in the display area.

[0119] For example, the multiple light-emitting elements may include several first light-emitting elements, several second light-emitting elements, and several third light-emitting elements, wherein the first light-emitting elements, second light-emitting elements, and third light-emitting elements emit different wavelengths, so that the first light-emitting elements, second light-emitting elements, and third light-emitting elements can emit light of different colors.

[0120] For example, multiple light-emitting elements may include several red light-emitting elements, several green light-emitting elements, and several blue light-emitting elements. Among them, the red light-emitting elements can emit red light, the green light-emitting elements can emit green light, and the blue light-emitting elements can emit blue light. Several red light-emitting elements, several green light-emitting elements, and several blue light-emitting elements can be integrated to form several pixel units.

[0121] Each pixel unit may include a red light-emitting element, a green light-emitting element, and a blue light-emitting element. The pixel unit can combine red light from the red light-emitting element, green light from the green light-emitting element, and blue light from the blue light-emitting element to form a combined light beam, so as to form a display image through the combined light beam of several pixel units.

[0122] In some possible implementations, the light-emitting element 10 may include a first doped layer 100, a light-emitting layer 200, a reflective layer 400 (i.e., a cup layer), and a second electrode 600. The first doped layer 100 and the second electrode 600 are electrically connected to both sides of the light-emitting layer 200, thereby enabling power to be supplied to the light-emitting layer 200 through the first doped layer 100 and the second electrode 600, so that the light-emitting layer 200 emits light.

[0123] For example, a reflective layer 400 is disposed on one side of the light-emitting layer 200. The reflective layer 400 has a reflective surface, which can be used to reflect light from the light-emitting layer 200, so that the light from the light-emitting layer 200 can converge and propagate in a direction away from the reflective surface.

[0124] Reference Figure 3 and Figure 4 ,as well as Figure 6 and Figure 7 In some possible implementations, the first doped layer 100 may be provided with a protrusion 110, which protrudes toward the second electrode 600 and may have a growth surface 111.

[0125] The protrusion 110 can be configured as an N-type doped structure, and the material of the protrusion 110 can be the same as the material of the first doped layer 100, so that the bonding between the protrusion 110 and the first doped layer 100 is more stable.

[0126] For example, the protrusion 110 of the first doped layer 100 can be formed by SAG technology, such that the side of the protrusion 110 away from the first doped layer 100 can have a growth surface 111, and the tilt and area of ​​the growth surface 111 can be determined according to the control of the photomask and the growth rate of the material.

[0127] Reference Figure 4 and Figure 7 The shape and arrangement of the growth surfaces 111 can be determined according to the material deposition principle in SAG technology. For example, the number of growth surfaces 111 can be set to six. In the plane parallel to the first doped layer 100, the six growth surfaces 111 are arranged sequentially around the axis of the protrusion 110 and can form a hexagon.

[0128] In the growth direction of the first doped layer 100, the growth surface 111 gradually approaches each other and the width of the growth surface 111 gradually decreases, so that the growth surface 111 can be used to form structures such as the light-emitting layer 200 and the reflective layer 400, thereby eliminating the need to etch the sidewalls of the light-emitting element 10 compared to related technologies.

[0129] During the fabrication of the first doped layer 100, a base layer for the first doped layer can be formed on the substrate by deposition or other methods, and a buffer layer can be formed on the surface of the first doped layer base layer away from the substrate. The function of the buffer layer is to reduce the lattice mismatch and the difference in thermal expansion coefficient between the substrate and the first doped layer base layer, thereby improving the forming quality of the first doped layer base layer.

[0130] Then, a portion of the buffer layer can be etched away through the openings in the mask 140, exposing a portion of the first doped layer base through the buffer layer. This exposed portion of the first doped layer base can then be used to form the protrusion 110. The material of the mask 140 can be silicon nitride (SiN) or silicon oxide (SiO2). Furthermore, openings can be created in the mask 140 using electron beam lithography (EBL) to define the pattern for selective region growth.

[0131] The protrusion 110 can be formed in the exposed portion of the first doped layer using SAG technology. The protrusion 110 is electrically connected to the first doped layer and protrudes relative to the buffer layer. A growth surface 111 is formed on the surface of the protrusion 110 away from the first doped layer 100, thereby realizing the fabrication process of the protrusion 110. When there are multiple protrusions 110, the multiple protrusions 110 can be electrically connected through the first doped layer, so that the subsequently formed first doped layer 100 can serve as a common electrode layer.

[0132] After the light-emitting layer 200, the reflective layer 400, and the second electrode 600 in the light-emitting element 10 are formed in sequence, the first doped layer can be thinned, thereby reducing the overall thickness of the semiconductor structure, improving the light extraction efficiency of the semiconductor structure, and improving the light output effect of the semiconductor structure.

[0133] It should be noted that the structure and bearing method of the protrusion 110 can be determined according to the type of the light-emitting element 10. For example, the end of the protrusion 110 away from the first doped layer 100 can be set as a tip, or the end of the protrusion 110 away from the first doped layer 100 can be set as a plane.

[0134] Reference Figure 3 and Figure 6 In some possible implementations, the light-emitting layer 200 may be disposed on the protrusion 110, and the light-emitting layer 200 is electrically connected to the first doped layer 100 through the protrusion 110, thereby enabling the light-emitting layer 200 to be carried through the protrusion 110.

[0135] For example, the reflective layer 400 may be disposed on the first doped layer 100. The reflective layer 400 has a reflective surface, for example, the inner surface of the reflective layer 400 forms a reflective surface, and the reflective layer 400 covers the growth surface 111 at least through the reflective surface, such that at least a portion of the protrusion 110 and the light-emitting layer 200 are located inside the reflective layer 400.

[0136] The reflective surface faces the first doped layer 100. The reflective layer 400 can reflect light propagating toward the second electrode 600 through the reflective surface, so that light from the light-emitting layer 200 can be converged through the reflective layer 400 and propagated toward the first doped layer 100, thereby improving the light extraction efficiency of the semiconductor structure.

[0137] The second electrode 600 can be disposed on the side of the light-emitting layer 200 away from the first doped layer 100, and the second electrode 600 is electrically connected to the light-emitting layer 200. The first doped layer 100 and the second electrode 600 are electrically connected to both sides of the light-emitting layer 200, respectively, so that power can be supplied to the light-emitting layer 200 through the first doped layer 100 and the second electrode 600, so that the light-emitting layer 200 emits light.

[0138] By adopting the above technical solution, in the semiconductor structure fabrication process, a first doped layer 100 can be formed on a substrate using selective region growth method, such that the first doped layer 100 has protrusions 110, and the protrusions 110 have growth surfaces 111. Then, a light-emitting layer 200 can be formed on the protrusions 110, and the light-emitting layer 200 is electrically connected to the first doped layer 100 through the protrusions 110, thereby realizing the fabrication of the light-emitting layer 200.

[0139] Subsequently, a reflective layer 400 can be formed in the first doped layer 100. The reflective layer 400 has a reflective surface and covers the growth surface 111 at least through the reflective surface. Thus, the growth surface 111 can be used as the basis for the preparation of the reflective layer 400. A second electrode 600 is formed on the surface of the reflective layer 400 away from the first doped layer 100. The second electrode 600 is electrically connected to the light-emitting layer 200, thereby realizing the preparation of the semiconductor structure.

[0140] Compared with related technologies, the embodiments of this application, by having the first doped layer 100 have a protrusion 110 and the protrusion 110 have a growth surface 111, allow the first doped layer 100 to be selectively grown, so that the growth surface 111 can be used as a basis for forming at least one of the light-emitting layer 200 and the reflective layer 400. This eliminates the need to remove the material of the first doped layer 100 through a dry etching process, thereby reducing the possibility of etching defects such as over-etching on the sidewalls of the micro light-emitting diode and improving the quality of the micro light-emitting diode.

[0141] Reference Figure 3 and Figure 6 In some possible implementations, the light-emitting element 10 may include a planarization layer 500, which may cover the surface of the reflective layer 400 away from the first doped layer 100.

[0142] The planarization layer 500 can be formed on the side of the reflective layer 400 away from the first doped layer 100 by deposition or other means. At least a portion of the planarization layer 500 can fill between adjacent light-emitting elements 10, thereby providing a certain support for multiple light-emitting elements 10 and reducing the possibility of tilting or movement of the structure of the light-emitting elements 10.

[0143] The planarization layer 500 may cover the surface of the reflective layer 400 away from the first doped layer 100, and the reflective layer 400 may not be exposed relative to the planarization layer 500. Alternatively, the planarization layer 500 may fill between adjacent light-emitting elements 10, and the reflective layer 400 may be exposed relative to the planarization layer 500.

[0144] In some possible implementations, the semiconductor structure may include a driving backplate 700, which is electrically connected to the first doped layer 100 and the second electrode 600, thereby controlling the voltage between the first doped layer 100 and the second electrode 600 through the driving backplate 700, so as to control the light-emitting layer 200 to emit light through the driving backplate 700.

[0145] For example, the driving backplate 700 can be disposed on the side of the second electrode 600 away from the first doped layer 100. The driving backplate 700 can be connected to the second electrode 600 by bonding or other means, making the connection between the driving backplate 700 and the second electrode 600 more stable.

[0146] The driving backplane 700 may have a first output terminal and a second output terminal that are set relatively independently. The first output terminal of the driving backplane 700 is provided with a first electrode 800, and the driving backplane 700 can be electrically connected to the first doped layer 100 through the first electrode 800. The second output terminal of the driving backplane 700 is electrically connected to the second electrode 600.

[0147] It is easy to understand that the first electrode 800 needs to extend from the side where the second electrode 600 of the semiconductor structure is located to the first doped layer 100, and the first electrode 800 is electrically connected to the first doped layer 100, so that the driving backplate 700 can be electrically connected to the first doped layer 100 through the first electrode 800.

[0148] The light-emitting element 10 is located within the display area to form a display image through a plurality of light-emitting elements 10 located within the display area. The first electrode 800 may be located within the non-display area, and at least a portion of the first electrode 800 may be arranged in the same layer as the first doped layer 100, thereby reducing the interference of the first electrode 800 on the light-emitting process of the light-emitting element 10 within the display area and reducing the obstruction of the light emitted by the light-emitting element 10 by the first electrode 800.

[0149] It should be noted that the first electrode 800 can be configured as a single-piece structure. Alternatively, the first electrode 800 can also be configured as multiple structures electrically connected together, so that the first electrode 800 can form a good ohmic contact and improve the electrical connection between the drive backplate 700 and the first doped layer 100.

[0150] When the first electrode 800 is configured to be formed by multiple electrical connections, the forming process of the first electrode 800 can be synchronized with the forming process of the light-emitting element 10, thereby reducing the steps required in the semiconductor structure forming process and making the semiconductor structure fabrication process more convenient.

[0151] For example, the semiconductor structure may also include a reinforcing layer 130, which may be disposed on the surface of the first doped layer 100 away from the second electrode 600, so that the reinforcing layer 130 can be used to improve the conductivity and transparency of the first doped layer 100, and further improve the light-emitting effect of the semiconductor structure.

[0152] The structure of the light-emitting element 10 is described below using the example of multiple light-emitting elements 10. Multiple light-emitting elements 10 can have different structures.

[0153] Reference Figures 1-4 In some possible implementations, the plurality of light-emitting elements 10 may include a first light-emitting element 10. The first light-emitting element 10 may be used to form green light-emitting elements and blue light-emitting elements.

[0154] In the first light-emitting element, an extension 120 may be provided on the surface of the first doped layer 100 facing the second electrode 600. The extension 120 may be formed at the opening of the mask 140 using SAG technology. The first end of the extension 120 is disposed on the first doped layer 100, and the second end of the extension 120 is electrically connected to the protrusion 110, so that the protrusion 110 can be electrically connected to the first doped layer 100 through the extension 120.

[0155] In other words, the end of the protrusion 110 away from the first doped layer 100 can be set as a tip, and the multiple growth surfaces 111 of the protrusion 110 are all connected to the outer surface of the extension 120. The ends of the multiple growth surfaces 111 of the protrusion 110 away from the extension 120 together form a tip.

[0156] For example, the light-emitting layer 200 can be configured as a multiple quantum well layer. The light-emitting layer 200 may include a first portion and a second portion connected together, the first portion of the light-emitting layer 200 may cover the protrusion 110, and the second portion of the light-emitting layer 200 may cover the extension 120.

[0157] For example, the light-emitting layer 200 can be formed by deposition or other methods, such that the first part of the light-emitting layer 200 covers the protrusion 110, the second part of the light-emitting layer 200 covers the extension 120, and the thickness of the first part and the second part of the light-emitting layer 200 can be uniform or approximately uniform, so that the outer surface shape of the first part of the light-emitting layer 200 is the same as or approximately the same as the shape of the extension 120, and the outer surface shape of the second part of the light-emitting layer 200 is the same as or approximately the same as the shape of the protrusion 110.

[0158] In some possible implementations, the first light-emitting element may include a second doped layer 300. The inner surface of the second doped layer 300 is in contact with the protrusion 110 and the extension 120, and the outer surface of the second doped layer 300 is disposed parallel to the growth surface 111.

[0159] For example, the second doped layer 300 can be disposed between the light-emitting layer 200 and the reflective layer 400. The second doped layer 300 can be configured as a p-type doped structure, and the second doped layer 300 is disposed on the side of the light-emitting layer 200 away from the protrusion 110, so that the second doped layer 300 and the protrusion 110 can be electrically connected to both sides of the light-emitting layer 200 respectively, thereby enabling the light-emitting layer 200 to be excited by the cooperating second doped layer 300 and protrusion 110.

[0160] The second doped layer 300 can be formed on the side of the light-emitting layer 200 away from the protrusion 110 by SAG technology. The inner surface of the second doped layer 300 is in electrical contact with the light-emitting layer 200, and the outer surface of the second doped layer 300 is inclined. The outer surface of the second doped layer 300 is parallel or approximately parallel to the growth surface 111.

[0161] It should be noted that the second doped layer 300, the protrusion 110, and the extension 120 are all formed by SAG technology. The precursor V / III ratio during the formation of the second doped layer 300 is higher than the precursor V / III ratio during the formation of the protrusion 110 and the extension 120, so that the outer surface of the second doped layer 300 can be tilted.

[0162] For example, the reflective layer 400 may cover the outer surface of the second doped layer 300, the reflective layer 400 is arranged parallel to the growth surface 111, and the reflective layer 400 is electrically connected to the light-emitting layer 200 through the second doped layer 300.

[0163] A transparent conductive layer 410 may also be disposed between the reflective layer 400 and the second doped layer 300. The transparent conductive layer 410 can be used to achieve ohmic contact between the reflective layer 400 and the second doped layer 300.

[0164] The thickness of the transparent conductive layer 410 can be uniform or approximately uniform, so that the outer surface of the transparent conductive layer 410 can be parallel to the growth surface 111, the inner surface of the transparent conductive layer 410 is in electrical contact with the outer surface of the second doped layer 300, and the outer surface of the transparent conductive layer 410 can be in electrical contact with the inner surface of the reflective layer 400.

[0165] The transparent conductive layer 410 can be made of indium tin oxide (ITO). The transparent conductive layer 410 has good conductivity and transparency, which helps to improve the electrical performance of the semiconductor structure.

[0166] In some possible implementations, the planarization layer 500 may be provided with a connection port 510. The connection port 510 may face the reflective layer 400. At least a portion of the second electrode 600 may be disposed within the connection port 510, and the second electrode 600 may be electrically connected to the surface of the reflective layer 400 away from the second doped layer 300 through the connection port 510, so that the second electrode 600 can supply power to the second doped layer 300, thereby enabling electrical contact between the light-emitting layer 200 and the first doped layer 100 through the second doped layer 300.

[0167] Alternatively, the connection port 510 may penetrate at least through the planarization layer 500 and the reflective layer 400, and at least a portion of the second electrode 600 may be disposed within the connection port 510. The second electrode 600 may be electrically connected to the second doped layer 300 through the connection port 510, so that the second electrode 600 may make surface electrical contact with the light-emitting layer 200 away from the first doped layer 100 through the second doped layer 300.

[0168] Reference Figures 5-7 In some possible implementations, the plurality of light-emitting elements may include a second light-emitting element, which can be used to form a red light-emitting element.

[0169] In the second light-emitting element, the protrusion is provided with a support surface 112, which is connected to the end of the growth surface 111 away from the first doped layer 100, so that at least part of the structure can be supported by the support surface 112.

[0170] The bearing surface 112 can be arranged parallel to the plane where the first doped layer 100 is located, so that the end of the protrusion 110 away from the first doped layer 100 is set as a plane. One end of the growth surface 111 is connected to the first doped layer 100, and the surface of the growth surface 111 away from the first doped layer 100 can be connected to the outer edge of the bearing surface 112.

[0171] During the forming process of the protrusion 110, a plane parallel to the substrate can be formed on the protrusion 110 by polishing or other methods. Then, a bearing surface 112 of the protrusion 110 can be deposited on the plane, so that the bearing surface 112 can be used to support the subsequently formed second doped layer 300 and light-emitting layer 200 and other structures, reducing the possibility of the second doped layer 300 and light-emitting layer 200 detaching from the bearing surface 112.

[0172] In some possible implementations, the light-emitting layer 200 is disposed on the support surface 112, the surface of the light-emitting layer 200 away from the support portion is electrically connected to the second doped layer 300, the outer surface of the light-emitting layer 200 can be disposed parallel to the growth surface 111, and the surface of the light-emitting layer 200 away from the support surface 112 can be disposed parallel or approximately parallel to the support surface 112.

[0173] The second light-emitting element may include a second doped layer 300, which may be configured as a p-type doped structure. The second doped layer 300 may be disposed on the surface of the light-emitting layer 200 away from the carrier surface 112. The outer surface of the second doped layer 300 may be disposed parallel to the growth surface 111, and the surface of the second doped layer 300 away from the light-emitting layer 200 may be disposed parallel or approximately parallel to the carrier surface 112.

[0174] In other words, in the direction away from the first doped layer 100, the area of ​​the second doped layer 300 is smaller than the area of ​​the light-emitting layer 200. The outer surfaces of the second doped layer 300 and the light-emitting layer 200 can be used together with the growth surface 111 to form the reflective layer 400, so that the inner surface of the reflective layer 400 can face the first doped layer 100 and form a reflective surface.

[0175] In some possible implementations, the second light-emitting element may include an isolation layer 420 (e.g., a PV layer). A first portion of the isolation layer 420 covers the growth surface 111 of the protrusion 110, and a second portion of the isolation layer 420 covers the second doped layer 300; the outer surface of the isolation layer 420 is arranged parallel to the growth surface 111.

[0176] For example, the isolation layer 420 may also have a third part, which is located between the first part and the second part of the isolation layer 420. The third part of the isolation layer 420 can be used to cover the outer surface of the second doped layer 300 and the light-emitting layer 200, thereby providing a certain support and protection through the isolation layer 420, reducing the possibility of short circuit between the second doped layer 300 and the protrusion 110 through the reflective layer 400.

[0177] In some possible implementations, a first portion of the reflective layer 400 covers a first portion of the insulating layer 420, and a second portion of the reflective layer 400 covers a second portion of the insulating layer 420.

[0178] The second light-emitting element may be provided with a connection port 510, which at least penetrates the second portion of the reflective layer 400 and the second portion of the isolation layer 420. At least a portion of the second electrode 600 is disposed within the connection port 510, and the second electrode 600 is electrically connected to the second doped layer 300 through the connection port 510.

[0179] The connection port 510 can penetrate at least the planarization layer 500 and the reflective layer 400. At least a portion of the second electrode 600 is disposed in the connection port 510. The second electrode 600 is electrically connected to the second doped layer 300 through the connection port 510, so that the second electrode 600 can make surface electrical contact with the light-emitting layer 200 away from the first doped layer 100 through the second doped layer 300.

[0180] Reference Figures 8-21 , Figures 8-21 Aimed at demonstrating structural changes during the fabrication process of a semiconductor structure, this application provides a method for fabricating a semiconductor structure, including forming a light-emitting element, comprising: forming a first doped layer on a substrate by selective region growth, wherein the first doped layer is provided with protrusions and the protrusions have growth surfaces.

[0181] The protrusion 110 can be configured as an N-type doped structure, and the material of the protrusion 110 can be the same as the material of the first doped layer 100, so that the bonding between the protrusion 110 and the first doped layer 100 is more stable.

[0182] For example, the protrusion 110 of the first doped layer 100 can be formed by SAG technology, such that the side of the protrusion 110 away from the first doped layer 100 can have a growth surface 111, and the tilt and area of ​​the growth surface 111 can be determined according to the control of the photomask and the growth rate of the material.

[0183] During the fabrication of the first doped layer 100, a base layer for the first doped layer can be formed on the substrate 20 by deposition or other methods, and a buffer layer can be formed on the surface of the first doped layer base away from the substrate 20. The function of the buffer layer is to reduce the lattice mismatch and the difference in thermal expansion coefficient between the substrate 20 and the base layer for the first doped layer, thereby improving the forming quality of the base layer for the first doped layer.

[0184] Then, a portion of the buffer layer can be etched away through the openings in the mask 140, exposing a portion of the first doped layer base through the buffer layer. This exposed portion of the first doped layer base can then be used to form the protrusion 110. The material of the mask 140 can be silicon nitride (SiN) or silicon oxide (SiO2). Furthermore, openings can be created in the mask 140 using electron beam lithography (EBL) to define the pattern for selective region growth.

[0185] The protrusion 110 can be formed in the exposed portion of the first doped layer using SAG technology. The protrusion 110 is electrically connected to the first doped layer and protrudes relative to the buffer layer. A growth surface 111 is formed on the surface of the protrusion 110 away from the first doped layer 100, thereby realizing the fabrication process of the protrusion 110. When there are multiple protrusions 110, the multiple protrusions 110 can be electrically connected through the first doped layer, so that the subsequently formed first doped layer 100 can serve as a common electrode layer.

[0186] For example, when forming the first light-emitting element, forming a first doped layer 100 on the substrate 20 includes: forming a first doped layer base on the substrate 20; forming an extension 120 on the surface of the first doped layer base away from the substrate 20; and forming a protrusion 110 at one end of the extension 120 away from the first doped layer base.

[0187] The extension 120 can be formed at the opening of the mask 140 using SAG technology. The first end of the extension 120 is disposed on the first doped layer 100, and the second end of the extension 120 is electrically connected to the protrusion 110, so that the protrusion 110 can be electrically connected to the first doped layer 100 through the extension 120.

[0188] For example, when forming the second light-emitting element, forming a first doped layer 100 on the substrate 20 includes: forming a first doped layer base on the substrate 20; forming a protrusion 110 on the surface of the first doped layer base away from the substrate 20, the protrusion being provided with a bearing surface 112, the bearing surface 112 being connected to one end of the growth surface 111 away from the first doped layer 100.

[0189] During the forming process of the protrusion 110, a plane parallel to the substrate 20 can be formed on the protrusion 110 by polishing or other methods. Then, a bearing surface 112 of the protrusion 110 can be deposited on the plane, so that the bearing surface 112 can be used to support the subsequently formed second doped layer 300 and light-emitting layer 200 and other structures, reducing the possibility of the second doped layer 300 and light-emitting layer 200 detaching from the bearing surface 112.

[0190] In some possible implementations, after the first doped layer base and the protrusion 110 are formed on the substrate 20, the method includes: forming a light-emitting layer on the protrusion, the light-emitting layer being electrically connected to the first doped layer through the protrusion.

[0191] The light-emitting layer 200 can be configured as a multi-quantum-well layer. For example, the light-emitting layer 200 can be formed on the protrusion 110 by deposition or other means, so that the light-emitting layer 200 can be electrically contacted with the protrusion 110.

[0192] For example, when forming the first light-emitting element, forming a light-emitting layer 200 on the protrusion 110 includes: depositing and forming the light-emitting layer 200 on the first doped layer 100, a first portion of the light-emitting layer 200 covering the protrusion 110, and a second portion of the light-emitting layer 200 covering the extension 120.

[0193] The light-emitting layer 200 may include a first part and a second part connected to each other. The first part of the light-emitting layer 200 may cover the protrusion 110, and the second part of the light-emitting layer 200 may cover the extension 120.

[0194] For example, the light-emitting layer 200 can be formed by deposition or other methods, such that the first part of the light-emitting layer 200 covers the protrusion 110, the second part of the light-emitting layer 200 covers the extension 120, and the thickness of the first part and the second part of the light-emitting layer 200 can be uniform or approximately uniform, so that the outer surface shape of the first part of the light-emitting layer 200 is the same as or approximately the same as the shape of the extension 120, and the outer surface shape of the second part of the light-emitting layer 200 is the same as or approximately the same as the shape of the protrusion 110.

[0195] After forming the light-emitting layer 200, the method further includes: forming a second doped layer 300 on the surface of the light-emitting layer 200 away from the first doped layer 100, wherein the inner surface of the second doped layer 300 is in contact with the protrusion 110 and the extension 120, and the outer surface of the second doped layer 300 is arranged parallel to the growth surface 111.

[0196] The second doped layer 300 can be formed on the side of the light-emitting layer 200 away from the protrusion 110 by SAG technology. The inner surface of the second doped layer 300 is in electrical contact with the light-emitting layer 200, and the outer surface of the second doped layer 300 is inclined. The outer surface of the second doped layer 300 is parallel or approximately parallel to the growth surface 111.

[0197] For example, when forming the second light-emitting element, a light-emitting layer 200 is formed on the carrier surface 112. The surface of the light-emitting layer 200 away from the carrier portion is electrically connected to the second doped layer 300. The outer surface of the light-emitting layer 200 can be arranged parallel to the growth surface 111, and the surface of the light-emitting layer 200 away from the carrier surface 112 can be arranged parallel or approximately parallel to the carrier surface 112.

[0198] A second doped layer 300 is formed on the surface of the light-emitting layer 200 away from the first doped layer 100. The second doped layer 300 can be formed on the side of the light-emitting layer 200 away from the protrusion 110 by SAG technology. The inner surface of the second doped layer 300 is in electrical contact with the light-emitting layer 200, and the outer surface of the second doped layer 300 is inclined and parallel or approximately parallel to the growth surface 111.

[0199] After forming the second doped layer 300 on the surface of the light-emitting layer 200 away from the first doped layer 100, the method further includes: forming an isolation layer 420, a first portion of which covers the growth surface 111 of the protrusion 110, and a second portion of which covers the second doped layer 300; the outer surface of the isolation layer 420 is arranged parallel to the growth surface 111.

[0200] It should be noted that the second doped layer 300, the protrusion 110, and the extension 120 are all formed by SAG technology. The precursor V / III ratio during the formation of the second doped layer 300 is higher than the precursor V / III ratio during the formation of the protrusion 110 and the extension 120, so that the outer surface of the second doped layer 300 can be tilted.

[0201] In some possible implementations, after the light-emitting layer 200 is formed on the protrusion 110, the method includes: forming a reflective layer 400 on the first doped layer 100, the reflective layer 400 having a reflective surface, the reflective layer 400 covering the growth surface 111 at least through the reflective surface, such that at least a portion of the protrusion 110 and the light-emitting layer 200 are located inside the reflective layer 400.

[0202] The reflective surface faces the first doped layer 100. The reflective layer 400 can reflect light propagating toward the second electrode 600 through the reflective surface, so that light from the light-emitting layer 200 can be converged through the reflective layer 400 and propagated toward the first doped layer 100, thereby improving the light extraction efficiency of the semiconductor structure.

[0203] After the reflective layer 400 is formed, a planarization layer 500 can be formed by deposition or other means. The planarization layer 500 can be formed on the side of the reflective layer 400 away from the first doped layer 100 by deposition or other means. At least a portion of the planarization layer 500 can fill the space between adjacent light-emitting elements, thereby providing a certain support for multiple light-emitting elements and reducing the possibility of tilting or movement of the light-emitting element structure.

[0204] After forming the reflective layer 400, the method further includes forming a second electrode 600 on the surface of the reflective layer away from the first doped layer 100, the second electrode 600 being electrically connected to the light-emitting layer 200.

[0205] After the second electrode 600 is formed, the driving backplate 700 can be connected to the side of the second electrode 600 away from the first doped layer 100. The driving backplate 700 is electrically connected to the first doped layer 100 through the first electrode 800, and the second output terminal of the driving backplate 700 is electrically connected to the second electrode 600.

[0206] The driving backplane 700 may have a first output terminal and a second output terminal that are set relatively independently. The first output terminal of the driving backplane 700 is provided with a first electrode 800, and the driving backplane 700 can be electrically connected to the first doped layer 100 through the first electrode 800. The second output terminal of the driving backplane 700 is electrically connected to the second electrode 600.

[0207] In some possible implementations, forming the first electrode 800 includes: forming a first electrode base on the substrate 20 when a first doped layer 100 is formed on the substrate 20, the first electrode base being electrically connected to the first doped layer 100.

[0208] A connection port 510 is formed in the planarization layer, and a conductive metal 511 is deposited in the connection port 510, so that the conductive metal 511 in part of the connection port 510 can be electrically connected to the first electrode base.

[0209] Forming a second electrode 600 includes: forming a second electrode base, wherein a first portion of the second electrode base is disposed corresponding to the first doped layer 100 and is respectively connected to both sides of the light-emitting layer 200. A second portion of the second electrode base is disposed corresponding to the first electrode base.

[0210] Then, a portion of the second electrode base can be removed. The first part of the second electrode base forms the second electrode 600, and the second part of the second electrode base, the conductive metal 511, and the first electrode base form the first electrode 800, so that the drive backplate 700 can be electrically connected to the first doped layer 100 through the first electrode 800.

[0211] This application also provides a display device including the semiconductor structure described in any of the above embodiments.

[0212] Since the display device includes any of the above-mentioned semiconductor structures, the advantages of the display device including any of the above-mentioned semiconductor structures can be specifically referred to in the relevant description above, and will not be repeated here.

[0213] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0214] In the description of this invention, it should be understood that the terms “comprising” and “having” as used herein, and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0215] Unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can be a direct connection or an indirect connection through an intermediate medium; they can refer to the internal connection of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features.

[0216] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor structure, characterized in that, Includes a light-emitting element, the light-emitting element comprising: A first doped layer, wherein the first doped layer is provided with a protrusion, the protrusion having a growth surface; A light-emitting layer is disposed on the protrusion and is connected to the first doped layer through the protrusion; A second doped layer is disposed on the surface of the light-emitting layer; A reflective layer having a reflective surface, the reflective layer covering the growth surface at least through the reflective surface and contacting the surface of the second doped layer; And, respectively, a second electrode and a first electrode connected to the second doped layer and the first doped layer.

2. The semiconductor structure according to claim 1, characterized in that, The light-emitting elements are multiple, and the multiple light-emitting elements include a first light-emitting element; In the first light-emitting element, the first doped layer has an extension portion facing the second electrode; the first end of the extension portion is disposed in the first doped layer, and the second end of the extension portion is electrically connected to the protrusion portion. The light-emitting layer covers the surface of the protrusion and the surface of the extension.

3. The semiconductor structure according to claim 2, characterized in that, The inner surface of the second doped layer is in contact with the protrusion and the extension; The reflective layer covers the outer surface of the second doped layer, the reflective layer is arranged parallel to the growth surface, and the reflective layer is electrically connected to the light-emitting layer through the second doped layer.

4. The semiconductor structure according to claim 3, characterized in that, The outer surface of the second doped layer is arranged parallel to the growth surface.

5. The semiconductor structure according to claim 3, characterized in that, The first light-emitting element includes a planarization layer that covers the surface of the reflective layer opposite to the first doped layer; At least a portion of the second electrode is located within the planarization layer, and the second electrode is electrically connected to the surface of the reflective layer opposite to the second doped layer.

6. The semiconductor structure according to claim 1, characterized in that, The light-emitting elements are multiple, and the multiple light-emitting elements include a second light-emitting element; In the second light-emitting element, the protrusion is provided with a bearing surface, and the bearing surface is connected to the end of the growth surface away from the first doped layer.

7. The semiconductor structure according to claim 6, characterized in that, The light-emitting layer is disposed on the support surface, and the surface of the light-emitting layer opposite to the support portion is electrically connected to the second doped layer.

8. The semiconductor structure according to claim 6, characterized in that, The second light-emitting element includes an insulating layer; The first portion of the isolation layer covers the growth surface of the protrusion, and the second portion of the isolation layer covers the second doped layer; the outer surface of the isolation layer is arranged parallel to the growth surface.

9. The semiconductor structure according to claim 8, characterized in that, The first portion of the reflective layer covers the first portion of the insulating layer, and the second portion of the reflective layer covers the second portion of the insulating layer; The second light-emitting element is provided with a communication port, which at least penetrates the second part of the reflective layer and the second part of the insulating layer; At least a portion of the second electrode is disposed within the communication port, and the second electrode is electrically connected to the second doped layer through the communication port.

10. The semiconductor structure according to any one of claims 1-9, characterized in that, The semiconductor structure includes a driving backplate, which is disposed on the side of the second electrode away from the first doped layer. The first output terminal of the driving backplate is electrically connected to the first doped layer through the first electrode, and the second output terminal of the driving backplate is electrically connected to the second electrode.

11. The semiconductor structure according to claim 10, characterized in that, The semiconductor structure has a display area and a non-display area surrounding the display area; The light-emitting element is located within the display area; the first electrode is located within the non-display area, and at least a portion of the first electrode is arranged in the same layer as the first doped layer.

12. A method for fabricating a semiconductor structure, characterized in that, Including the formation of light-emitting elements, including: A first doped layer is formed on a substrate by selective region growth, the first doped layer having protrusions, and the protrusions having growth surfaces; A light-emitting layer is formed on the protrusion, and the light-emitting layer is electrically connected to the first doped layer through the protrusion; A reflective layer is formed in the first doped layer, the reflective layer having a reflective surface, and the reflective layer at least covers the growth surface through the reflective surface; A second electrode is formed on the surface of the reflective layer away from the first doped layer, and the second electrode is electrically connected to the light-emitting layer.

13. The method for preparing a semiconductor structure according to claim 12, characterized in that, The light-emitting elements are multiple, and the multiple light-emitting elements include a first light-emitting element; When forming the first light-emitting element, a first doped layer is formed on the substrate, including: The first doped layer is formed on the substrate; An extension is formed on the surface of the first doped layer away from the substrate; The protrusion is formed at the end of the extension that is away from the base of the first doped layer.

14. The method for preparing a semiconductor structure according to claim 13, characterized in that, A light-emitting layer is formed on the protrusion, including: The light-emitting layer is deposited in the first doped layer, a first portion of the light-emitting layer covers the protrusion, and a second portion of the light-emitting layer covers the extension; After forming the light-emitting layer, the process further includes: A second doped layer is formed on the surface of the light-emitting layer away from the first doped layer. The inner surface of the second doped layer is in contact with the protrusion and the extension, and the outer surface of the second doped layer is parallel to the growth surface. The reflective layer covers the outer surface of the second doped layer, the reflective layer is arranged parallel to the growth surface, and the reflective layer is electrically connected to the light-emitting layer through the second doped layer.

15. The method for preparing a semiconductor structure according to claim 12, characterized in that, The light-emitting elements are multiple, and the multiple light-emitting elements include a second light-emitting element; When forming the second light-emitting element, a first doped layer is formed on the substrate, including: The first doped layer is formed on the substrate; The protrusion is formed on the surface of the first doped layer away from the substrate. The protrusion is provided with a bearing surface, which is connected to the end of the growth surface away from the first doped layer.

16. The method for preparing a semiconductor structure according to claim 15, characterized in that, After forming the first doped layer, the process includes: The light-emitting layer is formed on the bearing surface; A second doped layer is formed on the surface of the light-emitting layer away from the first doped layer; An isolation layer is formed, wherein a first portion of the isolation layer covers the growth surface of the protrusion, and a second portion of the isolation layer covers the second doped layer; the outer surface of the isolation layer is arranged parallel to the growth surface.

17. The method for preparing a semiconductor structure according to any one of claims 12-16, characterized in that, include: When the first doped layer is formed on the substrate, a first electrode base is formed on the substrate, and the first electrode base is electrically connected to the first doped layer; Forming the second electrode includes: A second electrode base is formed, the first part of which is disposed corresponding to the first doped layer and can be connected to the first doped layer on both sides of the light-emitting layer respectively; The second part of the second electrode base is configured to correspond to the first electrode base; A portion of the second electrode base is removed, the first portion of the second electrode base forms the second electrode, and the second portion of the second electrode base, together with the first electrode base, forms the first electrode. After forming the second electrode, the process also includes: The driving backplate is connected to the side of the second electrode away from the first doped layer. The driving backplate is electrically connected to the first doped layer through the first electrode. The second output terminal of the driving backplate is electrically connected to the second electrode.

18. A display device, characterized in that, Including the semiconductor structure as described in any one of claims 1-11.

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