A nitride semiconductor light emitting diode

Abstract

This invention discloses a nitride semiconductor light-emitting diode (LED), relating to the semiconductor field. The LED includes a base, a light-emitting unit and a monitoring unit disposed on the base, a control unit electrically connected to the light-emitting unit and the monitoring unit, and a package covering the light-emitting unit and the monitoring unit. By integrating the monitoring unit and the control unit onto the base and forming a feedback adjustment mechanism with the light-emitting unit, the monitoring unit collects the optical and temperature parameters of the LED chip in real time. The control unit dynamically adjusts the driving power based on the fused feedback signal, thereby achieving coordinated and stable control of light output intensity and chip junction temperature. This integrated design ensures that the device maintains constant optical performance and optimized thermal state under various operating conditions, significantly improving the reliability, lifespan, and color consistency of the nitride LED.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to a nitride semiconductor light-emitting diode. Background Technology

[0002] Nitride semiconductor light-emitting diodes (LEDs) are based on group III nitride materials such as gallium nitride (GaN). With their advantages such as high luminous efficiency, low power consumption and long lifespan, they have become core devices in the fields of solid-state lighting, backlight display and special light source.

[0003] In the prior art, the basic structure of a typical nitride LED includes a carrier base, an LED chip fixed on the base, and a package covering the chip. It operates by providing a constant current through an external driving circuit. To improve light extraction efficiency, some solutions will set up light-concentrating structures such as reflectors or lenses around the chip. However, existing solutions mostly focus on static optical and packaging structure optimization. When the LED device is working, its light output performance will decay as the junction temperature rises, and the luminous efficacy is also affected by temperature. Traditional driving methods cannot sense the real-time light power and temperature status inside the device, which leads to the light output not being able to remain stable when the ambient temperature changes or the device ages. It may also accelerate light decay due to continuous overheating, affecting lifespan and reliability. In view of the shortcomings of the prior art, the present invention provides a nitride semiconductor light-emitting diode to solve the above problems. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a nitride semiconductor light-emitting diode (LED). By integrating a monitoring unit and a control unit onto a base and forming a feedback adjustment mechanism with the light-emitting unit, it effectively solves the problem of not being able to sense the real-time optical power and temperature status inside the device in existing technologies. The monitoring unit collects the optical and temperature parameters of the LED chip in real time, and the control unit dynamically adjusts the driving power based on the fused feedback signal, thereby achieving coordinated and stable control of light output intensity and chip junction temperature. This integrated design ensures that the device can maintain constant optical performance and optimized thermal state under various operating conditions, significantly improving the reliability, lifespan, and color consistency of the nitride LED.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a nitride semiconductor light-emitting diode, comprising: Base; A light-emitting unit, disposed on the base, includes an LED chip and a light-concentrating structure for concentrating the light emitted by the LED chip; A monitoring unit, mounted on the base, is used to monitor the optical and temperature parameters of the light-emitting unit; A control unit, electrically connected to the light-emitting unit and the monitoring unit, is used to adjust the driving power of the light-emitting unit according to the feedback signal from the monitoring unit; An encapsulation body covers the light-emitting unit and the monitoring unit, and contains wavelength conversion material.

[0006] Preferably, the monitoring unit includes a photodetector, and the side wall of the light-concentrating structure is provided with a light guide hole, which guides part of the light in the light-concentrating structure to the photodetector.

[0007] Preferably, the wavelength conversion material is disposed within the package and located in the light-emitting path of the light-concentrating structure, for converting at least a portion of the light of the first wavelength emitted by the LED chip into light of the second wavelength.

[0008] Preferably, the control unit includes a controller, and the monitoring unit further includes a temperature sensor connected to the controller. The controller is configured to simultaneously receive the optical power signal of the photodetector and the temperature signal of the temperature sensor, and to perform composite adjustment of the driving current of the LED chip based on the fusion feedback of the optical power signal and the temperature signal.

[0009] Preferably, the temperature sensor is disposed on the base and adjacent to the substrate mounting position of the LED chip to directly monitor the chip junction temperature.

[0010] Preferably, the controller is configured as follows: When the optical power signal is lower than a first preset threshold and the temperature signal is lower than a second preset threshold, the driving current of the LED chip is increased; When the optical power signal is normal but the temperature signal is higher than the second preset threshold, current reduction or pulse drive is executed to control the temperature. When the temperature signal is normal but the light power signal is higher than the first preset threshold, the driving current of the LED chip is reduced to stabilize the light output.

[0011] Preferably, the bottom of the base is further provided with a circuit board, on which a power module and the control unit are integrated, and the power module is provided with power supply pins.

[0012] Preferably, the encapsulation body is made of highly transparent silicone or resin material, and its shape is a hemispherical or quasi-hemispherical lens structure. The wavelength conversion material is dispersed or fixed inside the encapsulation body in the form of a phosphor layer or a fluorescent ceramic sheet.

[0013] Preferably, the base is further provided with a protective bracket at the bottom, and a threaded ring is fixedly connected to the bottom of the base. The protective bracket is detachably connected to the base through the threaded ring.

[0014] Preferably, the protective bracket has a plurality of heat dissipation slots evenly distributed on its circumferential sidewalls, and the heat dissipation slots extend through the side of the protective bracket to form a heat dissipation channel.

[0015] The technical effects and advantages of this invention are as follows: 1. This nitride semiconductor light-emitting diode, by integrating the monitoring unit and control unit on the base and forming a feedback adjustment mechanism with the light-emitting unit, effectively solves the problem in the prior art of not being able to sense the real-time optical power and temperature status inside the device. The monitoring unit collects the optical and temperature parameters of the LED chip in real time, and the control unit dynamically adjusts the driving power according to the fused feedback signal, thereby realizing the coordinated and stable control of light output intensity and chip junction temperature. This integrated design ensures that the device can maintain constant optical performance and optimized thermal state under various operating conditions, significantly improving the reliability, lifespan and color consistency of the nitride LED.

[0016] 2. This nitride semiconductor light-emitting diode, by opening a light guide hole in the side wall of the light-concentrating structure, directly guides part of the focused light in the light-concentrating cavity to the photodetector integrated on the side, realizing efficient and in-situ sampling of the output light power. This allows the light feedback signal to originate directly from the core optical path, avoiding light loss and signal interference caused by external monitoring, improving the real-time performance and accuracy of monitoring, and providing a reliable data foundation for precise closed-loop control of the drive power.

[0017] 3. The controller of this nitride semiconductor light-emitting diode is configured to simultaneously receive optical power signals and temperature signals, and perform composite adjustment based on the fusion feedback of the two. It can intelligently identify and respond to abnormal light output or overheating risks. This collaborative control strategy can increase the drive current when the optical power is insufficient, and actively derate or switch the pulse drive when the temperature is too high. Thus, while ensuring the target light output, it can effectively prevent the chip from overheating and decaying, achieving a unity of performance optimization and active protection, and extending the working life of the device under high load. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a perspective view of the overall structure of the present invention; Figure 2 This is a three-dimensional structural diagram of the present invention; Figure 3This is a schematic diagram of the installation of the protective bracket of the present invention; Figure 4 This is a disassembly diagram of the protective bracket of the present invention; Figure 5 This is a cross-sectional view of the overall structure of the present invention; Figure 6 This is a schematic diagram of the light-concentrating structure of the present invention; Figure 7 This is the logic diagram of the controller of the present invention.

[0020] In the diagram: 1. Base; 2. Circuit board; 21. Power module; 22. Power supply pin; 3. LED chip; 4. Photodetector; 5. Package; 51. Wavelength conversion material; 6. Focusing structure; 61. Light guide hole; 7. Controller; 8. Temperature sensor; 9. Protective bracket; 91. Threaded ring; 92. Heat dissipation slot. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] This embodiment discloses a nitride semiconductor light-emitting diode, according to the appendix... Figure 1 To be continued Figure 7 As shown, the device includes a base 1, a light-emitting unit and a monitoring unit disposed on the base 1, a control unit electrically connected to the light-emitting unit and the monitoring unit, and a package 5 covering the light-emitting unit and the monitoring unit. A circuit board 2 is provided at the bottom of the base 1. A power module 21 and a control unit are integrated on the circuit board 2 and connected to the outside through a power supply pin 22. The light-emitting unit includes an LED chip 3 and a light-concentrating structure 6 for concentrating the light emitted by the LED chip 3. The monitoring unit is used to monitor the optical parameters and temperature parameters of the light-emitting unit. The control unit is used to adjust the driving power of the light-emitting unit according to the feedback signal of the monitoring unit. A wavelength conversion material 51 is provided inside the package 5.

[0023] According to the appendix Figure 5 and appendix Figure 6 As shown, the light-concentrating structure 6 is disposed around the LED chip 3, and its inner wall is a reflective surface, which is used to reflect and converge the lateral light emitted by the LED chip 3 to the light-emitting direction. Furthermore, the monitoring unit includes a photodetector 4, and a light guide hole 61 is provided on the side wall of the light-concentrating structure 6. The light guide hole 61 guides a part of the converged light in the light-concentrating structure 6 to the photosensitive surface of the photodetector 4, thereby realizing real-time sampling and monitoring of the emitted light power.

[0024] According to the appendix Figure 5 As shown, the wavelength conversion material 51 is disposed inside the package 5 and located in the light output path of the light-concentrating structure 6. Furthermore, the wavelength conversion material 51 is used to convert at least part of the light of the first wavelength emitted by the LED chip 3 into light of the second wavelength, which are then mixed to form white light or other composite light of the desired color temperature.

[0025] According to the appendix Figure 5 and appendix Figure 7 As shown, the control unit includes a controller 7, and the monitoring unit also includes a temperature sensor 8 connected to the controller 7. In particular, the controller 7 is configured to simultaneously receive the optical power signal of the photodetector 4 and the temperature signal of the temperature sensor 8, and to perform composite adjustment of the driving current of the LED chip 3 based on the fusion feedback of the optical power signal and the temperature signal.

[0026] According to the appendix Figure 5 As shown, the temperature sensor 8 is mounted on the base 1 and adjacent to the substrate mounting position of the LED chip 3. It should be particularly emphasized that this arrangement enables the temperature sensor 8 to directly and quickly sense the junction temperature change of the LED chip 3, providing key parameters for precise thermal management.

[0027] According to the appendix Figure 7 The logic diagram shown indicates that controller 7 is specifically configured to execute the following composite adjustment strategy: when the optical power signal is lower than the first preset threshold and the temperature signal is lower than the second preset threshold, the driving current of LED chip 3 is increased to improve light output; when the optical power signal is normal but the temperature signal is higher than the second preset threshold, the current is reduced or switched to pulse drive mode to actively control the temperature and prevent overheating attenuation; when the temperature signal is normal but the optical power signal is higher than the first preset threshold, the driving current of LED chip 3 is reduced to stabilize light output and avoid overdrive.

[0028] According to the appendix Figure 1 Appendix Figure 2 and appendix Figure 5 As shown, the encapsulation body 5 is made of highly transparent silicone or resin material, and its shape is a hemispherical or quasi-hemispherical lens structure, which helps to improve light extraction efficiency and control beam angle. Furthermore, the wavelength conversion material 51 is dispersed or fixed inside the encapsulation body 5 in the form of phosphor layer or fluorescent ceramic sheet.

[0029] According to the appendix Figure 3 Appendix Figure 4 and appendix Figure 5 As shown, the base 1 is also provided with a protective bracket 9 at the bottom. In particular, a threaded ring 91 is fixedly connected to the bottom of the base 1. The protective bracket 9 is detachably connected to the base 1 through the threaded ring 91, which facilitates installation, maintenance or replacement.

[0030] According to the appendix Figure 3 Appendix Figure 4 and appendix Figure 5 As shown, the protective bracket 9 has multiple heat dissipation slots 92 evenly distributed on its circumferential sidewalls. It is worth emphasizing that the heat dissipation slots 92 penetrate the side of the protective bracket 9, forming an effective heat dissipation channel. Together with the heat conduction of the base 1 itself, they form a heat dissipation path from the LED chip 3 to the external environment, ensuring the long-term reliable operation of the device.

[0031] Example 1: This example uses a nitride semiconductor light-emitting diode (LED) to power on and enter steady-state operation as an example, combined with the attached... Figure 1 To be continued Figure 7 The workflow is explained in detail below: The power supply is connected through the power supply pin 22, and the power module 21 supplies power to the controller 7, LED chip 3, photodetector 4 and temperature sensor 8.

[0032] The controller 7 outputs an initial drive current to make the LED chip 3 emit light. The light is focused by the light-concentrating structure 6, and the main beam passes through the wavelength conversion material 51 inside the package 5 to form mixed light and is emitted.

[0033] Meanwhile, a portion of the light within the light-concentrating structure 6 is guided to the photodetector 4 through the light guide hole 61, generating a corresponding optical power signal. The temperature sensor 8 monitors the temperature near the chip in real time and generates a temperature signal.

[0034] Controller 7 continuously receives and analyzes optical power and temperature signals, as shown in the appendix. Figure 7 According to the logic, if the initial optical power is lower than the preset target value and the temperature is safe, the controller 7 will gradually increase the drive current until the optical power signal reaches and stabilizes in the target range.

[0035] During operation, if the temperature signal reaches the second preset threshold due to the rise in ambient temperature, while the optical power signal is normal, the controller 7 will activate the temperature protection logic, such as slightly reducing the drive current or switching to pulse width modulation (PWM) drive, to reduce the chip junction temperature while maintaining the average optical output basically stable, so that the system returns to a balanced state.

[0036] Example 2: This example uses a nitride semiconductor light-emitting diode (LED) to handle a sudden overheating situation, combined with the attached... Figure 1 To be continued Figure 7 The protective workflow is described in detail below: When the device operates at high power continuously or the heat dissipation environment suddenly deteriorates, the junction temperature of the LED chip 3 rises rapidly and is keenly captured by the nearby temperature sensor 8, and the temperature signal quickly exceeds the second preset threshold.

[0037] The optical power signal received by controller 7 in real time may begin to decline due to the temperature quenching effect, or it may remain within the normal range for the time being.

[0038] According to the appendix Figure 7 The control logic shown here prioritizes handling overheating risks, and controller 7 determines the situation as "normal optical power but excessively high temperature".

[0039] The controller 7 immediately executes a derating or pulse drive strategy, such as significantly reducing the DC drive current to a safe level or switching to a low duty cycle pulse drive mode.

[0040] This solution can quickly reduce the heat generated by LED chip 3, allowing the temperature signal to gradually drop under the action of the heat dissipation system. Once the temperature signal returns to below the safe threshold, the controller 7 will slowly and steadily adjust the drive current according to the current optical power signal, ultimately stabilizing both the light output and temperature within the set operating window, thereby achieving active protection and lifespan extension for the device.

[0041] In summary, the nitride semiconductor light-emitting diode provided by this invention effectively solves the problem of the inability to sense the real-time optical power and temperature status inside the device in the prior art by integrating the monitoring unit and the control unit on the base 1 and forming a feedback adjustment mechanism with the light-emitting unit. The monitoring unit collects the optical and temperature parameters of the LED chip 3 in real time, and the control unit dynamically adjusts the driving power according to the fused feedback signal, thereby achieving coordinated and stable control of light output intensity and chip junction temperature. This integrated design ensures that the device can maintain constant optical performance and optimized thermal state under various operating conditions, significantly improving the reliability, lifespan, and color consistency of the nitride LED. At the same time, by opening a light guide hole 61 on the side wall of the light-concentrating structure 6, part of the converged light in the light-concentrating cavity is directly guided to the photodetector 4 integrated on the side, realizing efficient and in-situ sampling of the output light power. The light feedback signal comes directly from the core optical path, avoiding light loss and signal interference caused by external monitoring, improving the real-time performance and accuracy of monitoring, and providing a reliable data foundation for precise closed-loop control of driving power. The controller 7 is configured to simultaneously receive optical power signals and temperature signals, and perform composite adjustment based on the fusion feedback of the two. It can intelligently identify and respond to abnormal optical output or overheating risks. This collaborative control strategy can increase the drive current when the optical power is insufficient, and actively derate or switch the pulse drive when the temperature is too high. In this way, while ensuring the target optical output, it can effectively prevent the chip from overheating and decaying, achieving a unity of performance optimization and active protection, and extending the working life of the device under high load.

[0042] Finally, it should be noted that the above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A nitride semiconductor light-emitting diode, characterized in that, include: Base (1); The light-emitting unit is disposed on the base (1) and includes an LED chip (3) and a light-concentrating structure (6) for concentrating the light emitted by the LED chip (3). A monitoring unit is installed on the base (1) and is used to monitor the optical parameters and temperature parameters of the light-emitting unit; A control unit, electrically connected to the light-emitting unit and the monitoring unit, is used to adjust the driving power of the light-emitting unit according to the feedback signal from the monitoring unit; The encapsulation body (5) covers the light-emitting unit and the monitoring unit, and contains a wavelength conversion material (51).

2. A nitride semiconductor light-emitting diode according to claim 1, characterized in that, The monitoring unit includes a photodetector (4), and a light guide hole (61) is provided on the side wall of the light-concentrating structure (6). The light guide hole (61) guides part of the light in the light-concentrating structure (6) to the photodetector (4).

3. A nitride semiconductor light-emitting diode according to claim 2, characterized in that, The wavelength conversion material (51) is disposed inside the package (5) and located in the light output path of the light-concentrating structure (6), and is used to convert at least part of the light of the first wavelength emitted by the LED chip (3) into light of the second wavelength.

4. A nitride semiconductor light-emitting diode according to claim 3, characterized in that, The control unit includes a controller (7), and the monitoring unit further includes a temperature sensor (8) connected to the controller (7) by signal. The controller (7) is configured to simultaneously receive the optical power signal of the photodetector (4) and the temperature signal of the temperature sensor (8), and to perform composite adjustment of the driving current of the LED chip (3) based on the fusion feedback of the optical power signal and the temperature signal.

5. A nitride semiconductor light-emitting diode according to claim 4, characterized in that, The temperature sensor (8) is disposed on the base (1) and adjacent to the substrate mounting position of the LED chip (3) to directly monitor the chip junction temperature.

6. A nitride semiconductor light-emitting diode according to claim 5, characterized in that, The controller (7) is configured as follows: When the optical power signal is lower than the first preset threshold and the temperature signal is lower than the second preset threshold, the driving current of the LED chip (3) is increased; When the optical power signal is normal but the temperature signal is higher than the second preset threshold, current reduction or pulse drive is executed to control the temperature. When the temperature signal is normal and the light power signal is higher than the first preset threshold, the driving current of the LED chip (3) is reduced to stabilize the light output.

7. A nitride semiconductor light-emitting diode according to claim 1, characterized in that, The base (1) is also provided with a circuit board (2) at the bottom. The circuit board (2) integrates a power module (21) and the control unit. The power module (21) is provided with power supply pins (22).

8. A nitride semiconductor light-emitting diode according to claim 7, characterized in that, The encapsulation body (5) is made of highly transparent silicone or resin material, and its shape is a hemispherical or quasi-hemispherical lens structure. The wavelength conversion material (51) is dispersed or fixed inside the encapsulation body (5) in the form of a phosphor layer or a fluorescent ceramic sheet.

9. A nitride semiconductor light-emitting diode according to claim 1, characterized in that, The base (1) is also provided with a protective bracket (9) at the bottom. A threaded ring (91) is fixedly connected to the bottom of the base (1). The protective bracket (9) is detachably connected to the base (1) through the threaded ring (91).

10. A nitride semiconductor light-emitting diode according to claim 9, characterized in that, The protective bracket (9) has a plurality of heat dissipation slots (92) evenly distributed on its circumferential sidewall. The heat dissipation slots (92) penetrate the side of the protective bracket (9) to form a heat dissipation channel.

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