Perovskite photovoltaic module with p2 region composite conductive structure and preparation method thereof

Abstract

The application discloses a perovskite photovoltaic module with a P2 region composite conductive structure and a preparation method thereof, and belongs to the technical field of solar cells. The perovskite photovoltaic module comprises a thin-film solar cell, and the thin-film solar cell comprises a glass substrate, the upper surface of the glass substrate is provided with a back electrode layer, the back electrode layer is provided with three groups, a P1 scribe line region is arranged between the three groups of back electrode layers, the top end of the back electrode layer is provided with three groups of cell units, a P3 scribe line region is arranged between the three groups of cell units, the three groups of cell units comprise cell unit one, cell unit two and cell unit three, the inside of the cell unit one and the cell unit two is provided with a P2 conductive structure, the top end of the cell unit is provided with a front plate glass, and the lower surface of the front plate glass is adhesively fixed with an edge sealant. Through the above scheme, the light transmittance of the structure is improved, the conductive structure can be applied to a laminated cell or a semi-transparent photovoltaic component with a requirement for light transmittance, the use of precious metal materials is reduced, and the manufacturing cost is reduced.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, specifically to a perovskite photovoltaic module with a P2 region composite conductive structure and its preparation method. Background Technology

[0002] In thin-film solar cell modules, P1, P2, and P3 lines are typically formed by laser scribing to divide a large area of ​​thin film and connect it in series into multiple sub-cell units. Among them, the P2 scribing line is the key interconnection structure for realizing the series connection of sub-cells. In conventional transparent front electrode structures, the series connection at P2 is achieved by filling the groove of the scribing line with transparent conductive oxide (such as ITO). However, the conductivity of TCO material is much lower than that of metal, resulting in a high series resistance in the P2 region, which has become one of the main bottlenecks limiting the improvement of module fill factor and conversion efficiency.

[0003] To reduce the resistance in the P2 region, a composite back electrode structure (such as ITO / metal / ITO stack) is generally used, utilizing the high conductivity of the intermediate metal layer for current transmission. However, the opaque metal layer covering the entire surface of this structure blocks incident light, significantly reducing the device's transmittance. This makes it difficult to apply this structure to tandem cells or semi-transparent photovoltaic modules where transmittance is critical. Furthermore, depositing a thick TCO and metal layer across the entire surface, especially when using materials such as silver or copper, significantly increases manufacturing costs. Therefore, we need to propose a perovskite photovoltaic module with a composite conductive structure in the P2 region and its fabrication method. Summary of the Invention

[0004] The purpose of this invention is to provide a perovskite photovoltaic module with a P2 region composite conductive structure and its preparation method. The P2 conductive structure improves the conductivity of the battery cells, and ultra-thin AZO is used as the top transparent electrode, which fundamentally solves the contradiction between series resistance and optical loss in traditional structures. Low-cost, indium-free AZO is used to replace expensive ITO, and the amount of precious metals used is greatly reduced, thereby solving the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a perovskite photovoltaic module with a P2 region composite conductive structure, comprising a thin-film solar cell, wherein the thin-film solar cell comprises a glass substrate, a back electrode layer is deposited on the upper surface of the glass substrate, the back electrode layer is provided with three sets, a P1 scribing region is provided between the three sets of back electrode layers, three sets of battery cells are provided at the top of the back electrode layer, a P3 scribing region is provided between the three sets of battery cells, the P3 scribing region is located on the back electrode layer, the three sets of battery cells include battery cell one, battery cell two and battery cell three, the battery cell one and battery cell two are provided with a P2 conductive structure for improving conductivity, a front panel glass is provided at the top of the battery cell, an edge sealant is bonded and fixed to the lower surface of the front panel glass, and the lower surface of the edge sealant is bonded and fixed to the upper surface of the glass substrate.

[0006] For example, the battery cell includes a hole transport layer deposited on the upper surface of the back electrode layer, a light-absorbing layer deposited on the upper surface of the hole transport layer, an electron transport layer deposited on the upper surface of the light-absorbing layer, and a front electrode layer disposed at the top of the electron transport layer, the front electrode layer being made of AZO target material.

[0007] For example, the first battery cell is located on one side of the back electrode layer, the third battery cell is located on the other side of the back electrode layer, and the second battery cell is located in the middle of the back electrode layer.

[0008] For example, the P2 conductive structure includes a P2 trench formed on the front electrode, the bottom end of the P2 trench extending downward, and the inner cavity of the P2 trench being filled with a P2 filling layer.

[0009] For example, the upper surface of the glass substrate is further provided with a connection mechanism for connecting with the front glass panel. There are four sets of the connection mechanism, and the four sets of the connection mechanism are symmetrically distributed around the front glass panel.

[0010] For example, the connection mechanism includes a load-bearing column bonded to the upper surface of the glass substrate, the top of the load-bearing column being integrally formed with a support column, and the top of the support column being provided with a fixing structure for the front glass panel.

[0011] For example, the fixing structure includes a fixing seat located at the top of the front glass panel. The surface of the fixing seat has a movable hole, the inner cavity of the movable hole is slidably connected to the surface of the support column, the inner wall of the movable hole is integrally formed with a positioning block, and the outer surface of the support column has a positioning groove, the inner cavity of the positioning groove is engaged with the surface of the positioning block.

[0012] For example, the positioning groove is L-shaped and symmetrically distributed on both sides of the support column.

[0013] For example, the top of the load-bearing column is integrally formed with an annular plate, and an elastic silicone pad is bonded and fixed to the top of the annular plate. The upper surface of the elastic silicone pad is in contact with the lower surface of the front glass panel.

[0014] The present invention also provides a preparation method comprising the perovskite photovoltaic module with a P2 region composite conductive structure mentioned above, and further comprising the following steps: S1. Pre-process preparation: Provide a cleaned glass substrate, perform P1 laser scribing on the top of the glass substrate to divide the bottom electrode, deposit a nickel oxide hole transport layer and anneal it, coat a self-assembled monolayer, deposit a perovskite light absorption layer and anneal and crystallize it, evaporate C60 and deposit SnO2 in sequence to complete the electron transport layer preparation, and finally perform P2 laser scribing to etch until the front electrode ITO is exposed to form a series trench. S2. Deposition of an ultrathin AZO integrated top electrode: The sample is moved into a magnetron sputtering device and deposited under room temperature, low-power DC magnetron sputtering conditions; S3. Selective deposition of aluminum to fill P2 trenches: A high-precision metal mask is used, with a groove width 10-20μm larger than the P2 linewidth. Positioning is achieved through an optical vision system, aligning the mask groove with the P2 scribing area on the device. Under the cover of the mask, aluminum is deposited by magnetron sputtering. S4. Subsequent scribing and packaging: P3 laser scribing is performed using an ultraviolet picosecond laser, with optimized energy and number of scans to cleanly cut the AZO top electrode and the aluminum filler lines therein. Then, P4 laser scribing is performed to isolate the edges. After device packaging, the module fabrication is completed.

[0015] Compared with the prior art, the beneficial effects of the present invention are: This invention provides a perovskite photovoltaic module with a P2 region composite conductive structure and its preparation method. By setting the P2 region conductive structure, the conductivity of the battery cell is increased. By setting the front glass, the light transmittance of the perovskite photovoltaic module is improved. By using ultra-thin AZO as the top light-transmitting electrode, the light transmittance is enhanced. At the same time, by using AZO instead of ITO, the amount of precious metals used can be reduced. The above solutions improve the light transmittance of the structure, so that the conductive structure can be applied to tandem cells or semi-transparent photovoltaic modules with light transmittance requirements, reducing the use of precious metal materials and reducing manufacturing costs.

[0016] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures pointed out in the description and the drawings. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the structure of the present invention with the front glass panel open; Figure 3 This is a schematic diagram of the structure of the support column disassembly fixing seat of the present invention; Figure 4 This is a schematic diagram of a partial cross-section of the present invention; Figure 5 This is a schematic diagram showing the exploded structure of the P2 trench and P2 filling layer of the present invention; Figure 6 This is a flowchart of the preparation method of the present invention.

[0018] In the diagram: 1. Glass substrate; 2. Back electrode layer; 3. P1 scribing area; 4. P3 scribing area; 5. Battery cell one; 6. Battery cell two; 7. Battery cell three; 8. P2 conductive structure; 81. P2 trench; 82. P2 filling layer; 9. Front panel glass; 10. Edge sealant; 11. Hole transport layer; 12. Light-absorbing layer; 13. Electron transport layer; 14. Front electrode layer; 15. Connecting mechanism; 151. Load-bearing column; 152. Support column; 153. Fixing base; 154. Positioning block; 155. Positioning groove; 156. Annular plate; 157. Elastic silicone pad. Detailed Implementation

[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] Please see Figure 1-6 This invention provides a perovskite photovoltaic module with a P2 region composite conductive structure, including a thin-film solar cell. The thin-film solar cell includes a glass substrate 1. A back electrode layer 2 is deposited on the upper surface of the glass substrate 1. The back electrode layer 2 is provided with three sets. A P1 scribing region 3 is provided between the three sets of back electrode layers 2. Three sets of battery cells are provided at the top of the back electrode layer 2. A P3 scribing region 4 is provided between the three sets of battery cells. The P3 scribing region 4 is located on the back electrode layer 2. The three sets of battery cells include battery cell 1 5, battery cell 2 6, and battery cell 3 7. A P2 conductive structure 8 for improving conductivity is provided inside battery cell 1 5 and battery cell 2 6. A front panel glass 9 is provided at the top of the battery cells. An edge sealant 10 is bonded and fixed to the lower surface of the front panel glass 9. The lower surface of the edge sealant 10 is bonded and fixed to the upper surface of the glass substrate 1. By setting the glass substrate 1 as the supporting base of the entire photovoltaic module, the structural mechanical stability can be guaranteed. The back electrode layer 2, as the bottom electrode, has the characteristics of selenium corrosion resistance and strong conductivity, which is suitable for the use requirements of the bottom electrode of thin film battery. At the same time, the three sets of back electrode bottom electrodes are divided by P1 laser scribing to realize the bottom electrical partitioning of multiple battery cells. The P3 line cuts off and isolates the top electrode, completing the overall electrical division of the sub-cell unit. Together with the P2 conductive structure 8, it enables multiple cell units to be connected in series. The large-area photovoltaic device is split into independent sub-cells and connected in series. By setting the P2 conductive structure 8 as the core interconnection channel for the sub-cell series connection, it is responsible for the current conduction between adjacent cell units, solving the problem of conductivity in the module series connection. This increases the conductivity of the cell units, improves the light transmittance of the perovskite photovoltaic module, and can reduce the amount of precious metals used and reduce manufacturing costs.

[0021] The battery cell includes a hole transport layer 11 deposited on the upper surface of the back electrode layer 2, a light-absorbing layer 12 deposited on the upper surface of the hole transport layer 11, an electron transport layer 13 deposited on the upper surface of the light-absorbing layer 12, and a front electrode layer 14 disposed at the top of the electron transport layer 13. The front electrode layer 14 is made of AZO target material. Light passes through the front panel glass 9 and enters the light-absorbing layer 12 (perovskite layer). The perovskite material absorbs photons to generate photogenerated carriers (electrons and holes). Holes are guided from the hole transport layer 11 to the bottom back electrode, and electrons are guided from the electron transport layer 13 to the top front electrode layer 14, forming a directional photogenerated current. AZO (aluminum-doped zinc oxide) is used as the global front electrode layer 14, which is deposited on the entire surface by magnetron sputtering. It serves as the common top electrode for lateral current collection. By matching the photoelectric conversion mechanism of perovskite photovoltaic cells through the standard Chenhua structure, the photoelectric conversion efficiency is stable. AZO is used to replace traditional ITO. It does not contain the rare metal indium, which greatly reduces the cost of raw materials and resource dependence. At the same time, it has excellent light transmittance and will not block incident light, making it suitable for use in semi-transparent and tandem photovoltaic modules.

[0022] Battery unit 5 is located on the left side of the back electrode layer 2, battery unit 7 is located on the right side of the back electrode layer 2, and battery unit 6 is located in the middle of the back electrode layer 2. The three battery units are arranged horizontally and evenly along the substrate, forming a module circuit layout with lines P1, P2, and P3 connected in series on the left, right, and middle sides. Current can be conducted orderly between the three battery units along a preset path, completing multi-unit series power generation. The P2 conductive structure 8 includes a P2 trench 81 formed on the front electrode. The bottom end of the P2 trench 81 extends downward, and the inner cavity of the P2 trench 81 is filled with a P2 filling layer 82. The P2 trench 81 is formed by laser etching. The trench penetrates the front electrode, the electron transport layer 13 and all the way to the hole transport layer 11, opening up the electrical interconnection channel between adjacent battery cells. It is the core trench structure for realizing the series connection of sub-cells. The inner wall of the trench is pre-covered with a fully deposited AZO layer to form an insulating protective layer; the P2 filling layer 82 inside the trench is a highly conductive metal (preferably aluminum), forming a composite conductive structure of "TCO protective layer + metal conductive core": AZO isolates the metal from the perovskite and hole transport layer 11 to prevent interface corrosion and leakage; the metal filling layer utilizes its own high conductivity to significantly reduce the series resistance of the P2 region and achieve low-resistance current transmission.

[0023] The upper surface of the glass substrate 1 is also provided with a connecting mechanism 15 for connecting with the front glass 9. There are four sets of connecting mechanisms 15, and the four sets of connecting mechanisms 15 are symmetrically distributed around the front glass. By setting the connecting mechanism 15, the stability of the glass substrate 1 after being combined with the front glass can be improved.

[0024] The connecting mechanism 15 includes a load-bearing column 151 bonded and fixed to the upper surface of the glass substrate 1. The top of the load-bearing column 151 is integrally formed with a support column 152. The top of the support column 152 is provided with a fixing structure for the front glass 9. The front glass 9 is covered on the edge sealant 10. The support column 152 passes through the front glass 9 and is then connected to the support column 152 through the fixing structure to fix and lock the front glass 9, preventing the front glass 9 from detaching from the edge sealant 10 and improving the stability of the front glass 9 after being combined with the glass substrate 1.

[0025] The fixing structure includes a fixing seat 153, which is located at the top of the front glass 9. The surface of the fixing seat 153 has a movable hole, and the inner cavity of the movable hole is slidably connected to the surface of the support column 152. The inner wall of the movable hole is integrally formed with a positioning block 154. The outer surface of the support column 152 has a positioning groove 155, and the inner cavity of the positioning groove 155 is engaged with the surface of the positioning block 154. The surface of the front glass 9 has a through hole that matches the support column. The through hole of the front glass 9 is aligned with the position of the support column 152, and then the front glass 9 is covered and bonded with the edge sealant 10. At the same time, the top of the support column 152 passes through the through hole and extends to the top of the front glass 9. The fixing seat 153 is removed, and the positioning block 154 is aligned with the position of the positioning groove 155. The fixing seat 153 and the support column 152 are combined, and the positioning block 154 is inserted into the inner cavity of the positioning groove 155 to fix the position of the front glass 9.

[0026] The positioning groove 155 is L-shaped and symmetrically distributed on both sides of the support column 152. The shape of the positioning groove 155 and the positioning block 154 cooperate to form a snap-fit ​​structure, which combines the fixing seat 153 with the support column 152. The fixing seat 153 drives the positioning block 154 to slide in the positioning groove 155. When the positioning block 154 slides into place, the fixing seat 153 can be rotated to drive the positioning block 154 to slide at the bottom of the positioning groove 155, so that the positioning block 154 slides into the depth of the positioning groove 155, completing the axial limit and circumferential locking, preventing the front glass 9 from shifting, tilting, or falling off. The symmetrical positioning groove 155 forms a two-way snap-fit, the locking force is balanced, and the locking effect is reliable.

[0027] The top of the load-bearing column 151 is integrally formed with an annular plate 156. An elastic silicone pad 157 is bonded and fixed to the top of the annular plate 156. The upper surface of the elastic silicone pad 157 is in contact with the lower surface of the front glass 9. The annular plate 156 bears the weight of the elastic silicone pad 157 and the pressure of the fixing seat 153 on the front glass 9. The setting of the elastic silicone pad 157 plays a role in buffering and shock absorption, absorbing vibration and impact load, and preventing the glass from breaking due to hard contact. On the other hand, the silicone material has sealing and insulating properties, which can help the edge sealing strip fill the tiny gaps and further prevent water vapor and air from entering the module.

[0028] Please see Figure 6 The present invention also provides a method for preparing a perovskite photovoltaic module with a P2 region composite conductive structure, which further includes the following steps: S1. Pre-process fabrication: A cleaned glass substrate is provided. P1 laser scribing is performed on the top of the glass substrate to divide the bottom electrode. Nickel oxide (NiO) is then deposited sequentially. x Hole transport layer is annealed, self-assembled monolayer (SAM) is coated, perovskite light absorption layer (such as FA0.9Cs0.1PbI3) is deposited and annealed to crystallize, C60 is evaporated and SnO2 is deposited in sequence to complete the electron transport layer preparation, and finally P2 laser scribing is performed to etch until the front electrode ITO is exposed to form a series trench. S2. Deposition of an ultrathin AZO integrated top electrode: The sample is moved into a magnetron sputtering device and deposited under room temperature, low-power DC magnetron sputtering conditions; Target material: ZnO:Al2O3 (98:2wt%) ceramic target, working pressure: 0-10.0Pa (argon atmosphere), sputtering power: 0-80W, deposition time: control film thickness to 0-500 nm; S3. Selective deposition of aluminum to fill P2 trenches: A high-precision metal mask is used, with a groove width 10-20μm larger than the P2 linewidth. Positioning is achieved through an optical vision system, aligning the mask groove with the P2 scribing area on the device. Under the cover of the mask, aluminum is deposited by magnetron sputtering. Target material: high-purity aluminum target (purity ≥99.999%), process parameters: low-power sputtering to prevent high-energy particles from penetrating the underlying ultra-thin AZO, deposition thickness: 0-500nm to ensure complete filling of the P2 trench and formation of a reliable conductive channel. After deposition, the mask is removed. At this time, the AZO / Al stacked structure exists only in the P2 line region on the device surface, and the remaining areas are only 0-30nm thick AZO top electrodes. S4. Subsequent scribing and packaging: P3 laser scribing is performed using an ultraviolet picosecond laser, with optimized energy and number of scans to cleanly cut the AZO top electrode and the aluminum filler lines therein. Then, P4 laser scribing is performed to isolate the edges. After device packaging, the module fabrication is completed.

[0029] Thin-film solar cell fabrication methods The metal filler layer material is prepared by physical vapor deposition (PVD), such as evaporation or magnetron sputtering. It should be noted that the preparation process can only fill the P2 scribe line area, requiring a high-precision mask with a groove width 10-20 μm larger than the P2 line width. The metal raw material atoms move onto the mask through evaporation or sputtering. The metal material can only pass through the holes and be deposited in the P2 scribe line groove, while the film layer in other locations will be blocked by the mask, thus achieving selective film deposition.

[0030] Example 2 When the photoelectric conversion layer of the thin-film solar cell is mainly CIGS (copper indium gallium selenide), a layer of metallic molybdenum (Mo) is deposited on the glass substrate by PVD. This metal is resistant to selenium corrosion. After P1 marking, CIGS layer is deposited sequentially by co-evaporation. CdS (cadmium sulfide) is prepared by water bath method. After P2 marking, an ultrathin AZO integrated top electrode is first deposited by sputtering, and then a metallic aluminum layer is deposited by high masking. Finally, P3 marking is performed, and the basic structure of the cell is formed.

[0031] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A perovskite photovoltaic module with a P2 region composite conductive structure, characterized in that, include: Thin-film solar cells include a glass substrate, on the upper surface of which a back electrode layer is deposited. The back electrode layer is provided with three sets, and a P1 scribing area is provided between the three sets of back electrode layers. Three sets of battery cells are provided at the top of the back electrode layer, and a P3 scribing area is provided between the three sets of battery cells. The P3 scribing area is located on the back electrode layer. The three battery units include battery unit one, battery unit two, and battery unit three. Battery unit one and battery unit two are provided with P2 conductive structures to improve conductivity. The battery unit has a front glass panel at its top, and an edge sealant is bonded to the lower surface of the front glass panel. The lower surface of the edge sealant is bonded to the upper surface of the glass substrate.

2. The perovskite photovoltaic module with a P2 region composite conductive structure according to claim 1, characterized in that: The battery cell includes a hole transport layer deposited on the upper surface of the back electrode layer, a light-absorbing layer deposited on the upper surface of the hole transport layer, an electron transport layer deposited on the upper surface of the light-absorbing layer, and a front electrode layer disposed at the top of the electron transport layer, the front electrode layer being made of AZO target material.

3. A perovskite photovoltaic module with a P2 region composite conductive structure according to claim 1, characterized in that: Battery cell one is located on one side of the back electrode layer, battery cell three is located on the other side of the back electrode layer, and battery cell two is located in the middle of the back electrode layer.

4. A perovskite photovoltaic module with a P2 region composite conductive structure according to claim 1, characterized in that: The P2 conductive structure includes a P2 trench formed on the front electrode, the bottom end of the P2 trench extends downward, and the inner cavity of the P2 trench is filled with a P2 filling layer.

5. A perovskite photovoltaic module with a P2 region composite conductive structure according to claim 1, characterized in that: The upper surface of the glass substrate is also provided with a connection mechanism for connecting with the front glass panel. There are four sets of connection mechanisms, and the four sets of connection mechanisms are symmetrically distributed around the front glass panel.

6. A perovskite photovoltaic module with a P2 region composite conductive structure according to claim 5, characterized in that: The connecting mechanism includes a load-bearing column bonded and fixed to the upper surface of the glass substrate. The top of the load-bearing column is integrally formed with a support column, and the top of the support column is provided with a fixing structure for the front glass panel.

7. A perovskite photovoltaic module with a P2 region composite conductive structure according to claim 6, characterized in that: The fixing structure includes a fixing seat located at the top of the front glass panel. The surface of the fixing seat has a movable hole, the inner cavity of the movable hole is slidably connected to the surface of the support column, the inner wall of the movable hole is integrally formed with a positioning block, and the outer surface of the support column has a positioning groove, the inner cavity of the positioning groove is engaged with the surface of the positioning block.

8. A perovskite photovoltaic module with a P2 region composite conductive structure according to claim 7, characterized in that: The positioning grooves are L-shaped and symmetrically distributed on both sides of the support column.

9. A perovskite photovoltaic module with a P2 region composite conductive structure according to claim 7, characterized in that: The top of the load-bearing column is integrally formed with an annular plate, and an elastic silicone pad is bonded and fixed to the top of the annular plate. The upper surface of the elastic silicone pad is in contact with the lower surface of the front glass panel.

10. A method for preparing a perovskite photovoltaic module with a P2 region composite conductive structure as described in any one of claims 1-9, characterized in that, It also includes the following steps: S1. Pre-process preparation: Provide a cleaned glass substrate, perform P1 laser scribing on the top of the glass substrate to divide the bottom electrode, deposit a nickel oxide hole transport layer and anneal it, coat a self-assembled monolayer, deposit a perovskite light absorption layer and anneal and crystallize it, evaporate C60 and deposit SnO2 in sequence to complete the electron transport layer preparation, and finally perform P2 laser scribing to etch until the front electrode ITO is exposed to form a series trench. S2. Deposition of an ultrathin AZO integrated top electrode: The sample is moved into a magnetron sputtering device and deposited under room temperature, low-power DC magnetron sputtering conditions; S3. Selective deposition of aluminum to fill P2 trenches: A high-precision metal mask is used, with a groove width 10-20μm larger than the P2 linewidth. Positioning is achieved through an optical vision system, aligning the mask groove with the P2 scribing area on the device. Under the cover of the mask, aluminum is deposited by magnetron sputtering. S4. Subsequent scribing and packaging: P3 laser scribing is performed using an ultraviolet picosecond laser, with optimized energy and number of scans to cut the AZO top electrode and the aluminum filler line therein. Then, P4 laser scribing is performed to isolate the edges. After device packaging, the module fabrication is completed.

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