Display substrate, display substrate manufacturing method, and display device

Abstract

This application provides a display substrate, a method for fabricating the display substrate, and a display device. The display substrate includes: a substrate; a display area and a peripheral area surrounding the display area; the display area includes an opening area and an isolation area surrounding the opening area; a barrier wall disposed in the isolation area and surrounding the opening area; the display substrate includes a plurality of first isolation pillars; the plurality of first isolation pillars are spaced apart in the isolation area and located on the side of the barrier wall closer to the display area; a first inorganic layer is disposed on the side of the first isolation pillars away from the substrate; wherein, at least the first isolation pillar closest to the display area includes a first portion and a second portion; the first portion and the second portion extend along a first direction; the orthographic projection of the first portion on the substrate exceeds the orthographic projection of the first inorganic layer on the substrate; the orthographic projection of the second portion on the substrate is located within the orthographic projection of the first inorganic layer on the substrate; the first direction is the direction of extension from the display area to the isolation area.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display substrate, a method for preparing the display substrate, and a display device. Background Technology

[0002] The application of AMOLED (Active Matrix / Organic Light Emitting Diode) products is increasingly expanding from small-sized mobile phones and watches to medium-sized applications, especially in tablets, notebooks, and automotive applications, where demand is growing rapidly. Medium-sized AMOLED products will give rise to more new form factors and scenarios, with increasingly higher requirements for lifespan and reliability. Enhancing product reliability is one of the most important ways to increase product competitiveness.

[0003] In display panels, the design of openings within the display screen has become a development trend in recent years. Mobile, medium-to-large-sized, and notebook displays are increasingly moving towards AA Holes (Active Area Holes, where openings are set in the display area) to facilitate the placement of cameras and light sensors. However, in OLEDs (Organic Light-Emitting Diodes), the presence of openings allows moisture and oxygen from the air to easily penetrate into the display area of ​​the display substrate along the cathode layer / EL (Electro Luminescent) material layer at the opening boundary, compromising the reliability of the encapsulation. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a display substrate, a method for preparing the display substrate, and a display device.

[0005] For the purposes described above, this application provides a display substrate, comprising:

[0006] A substrate; the substrate has a display area and a peripheral area surrounding the display area; the display area includes an opening area and an isolation area disposed around the opening area;

[0007] A barrier wall is installed in the isolation zone and surrounds the opening area;

[0008] The display substrate includes a plurality of first isolation pillars; the plurality of first isolation pillars are spaced apart in the isolation area and are located on the side of the barrier wall closer to the display area;

[0009] The first inorganic layer is disposed on the side of the first isolation pillar away from the substrate.

[0010] Wherein, at least the first isolation pillar closest to the display area includes a first portion and a second portion; the first portion and the second portion extend along a first direction; the orthographic projection of the first portion on the substrate exceeds the orthographic projection of the first inorganic layer on the substrate; the orthographic projection of the second portion on the substrate is located within the orthographic projection of the first inorganic layer on the substrate; the first direction is the direction of extension from the display area to the isolation area.

[0011] In some embodiments, the first inorganic layer covers the first isolation pillar on the side near the display area; the first portion and the second portion are generally stepped.

[0012] In some embodiments, in the second direction, the size of the first portion is smaller than the size of the second portion; the second direction is perpendicular to the first direction.

[0013] In some embodiments, the display substrate further includes a first source-drain layer, and the isolation pillar is disposed in the same layer as the first source-drain layer.

[0014] In some embodiments, the first inorganic layer is disconnected at the interval between the first isolation pillar closest to the display area and the adjacent first isolation pillar.

[0015] In some embodiments, the first source-drain layer is an aluminum-titanium composite layer structure; the first isolation pillar further includes a third portion, the third portion being disposed on the side of the first portion close to the substrate; the orthographic projection of the third portion onto the substrate exceeds the orthographic projection of the first portion onto the substrate;

[0016] The first part and the second part are both disposed in the same layer as the aluminum layer of the first source and drain layer; the third part is disposed in the same layer as the titanium layer of the first source and drain layer on the side closer to the substrate.

[0017] In some embodiments, the display substrate further includes a plurality of second isolation pillars; the plurality of second isolation pillars are spaced apart on the side of the barrier wall away from the display area; a third inorganic layer is disposed on the side of the second isolation pillars away from the substrate.

[0018] Wherein, at least the second isolation pillar closest to the display area includes a fourth portion and a fifth portion; the fourth portion and the fifth portion extend along a first direction; the orthographic projection of the fourth portion onto the substrate exceeds the orthographic projection of the third inorganic layer onto the substrate; the orthographic projection of the fifth portion onto the substrate is located within the orthographic projection of the third inorganic layer onto the substrate.

[0019] In some embodiments, the display substrate further includes a third source-drain layer disposed on the side of the first source-drain layer away from the substrate; the second isolation pillar is disposed in the same layer as the third source-drain layer.

[0020] In some embodiments, the display substrate further includes a light-emitting layer disposed on the side of the third inorganic layer away from the substrate; the orthographic projection of the light-emitting layer on the substrate does not overlap with the orthographic projection of the first isolation pillar on the substrate; the orthographic projection of the light-emitting layer on the substrate does not overlap with the orthographic projection of the second isolation pillar on the substrate.

[0021] In some embodiments, the display substrate further includes a cathode layer disposed on the side of the third inorganic layer away from the substrate; the orthographic projection of the cathode layer on the substrate does not overlap with the orthographic projection of the first isolation pillar on the substrate; the orthographic projection of the cathode layer on the substrate does not overlap with the orthographic projection of the second isolation pillar on the substrate.

[0022] In some embodiments, the display substrate further includes an encapsulation layer, a touch layer, and a polarizing layer disposed on the side of the first inorganic layer away from the substrate; the touch layer is disposed on the side of the encapsulation layer away from the substrate; and the polarizing layer is disposed on the side of the touch layer away from the substrate.

[0023] This application also provides a display device, including a display substrate as described in any of the preceding embodiments.

[0024] In some embodiments, the display device further includes a sensor located on one side of the display surface of the display substrate and directly opposite the opening area.

[0025] This application also provides a method for preparing a display substrate, comprising:

[0026] A substrate is provided; the substrate has a display area and a peripheral area; the peripheral area is located on the outer periphery of the display area; the display area includes an opening area and an isolation area disposed around the opening area;

[0027] Multiple first isolation columns are formed in the isolation zone; the multiple first isolation columns are spaced apart.

[0028] A first inorganic layer is formed on the side of the first isolation pillar away from the substrate.

[0029] A barrier wall is formed in the isolation zone; the barrier wall is located on the side of the first isolation column away from the display area and surrounds the opening area;

[0030] Wherein, at least the first isolation pillar closest to the display area includes a first portion and a second portion; the first portion and the second portion extend along a first direction; the orthographic projection of the first portion on the substrate exceeds the orthographic projection of the first inorganic layer on the substrate; the orthographic projection of the second portion on the substrate is located within the orthographic projection of the first inorganic layer on the substrate; the first direction is the direction of extension from the display area to the isolation area.

[0031] In some embodiments, the method further includes:

[0032] A second isolation pillar is formed on the side of the first inorganic layer away from the substrate.

[0033] A light-emitting layer is formed on the side of the second isolation pillar away from the substrate; wherein the orthographic projection of the light-emitting layer on the substrate does not overlap with the orthographic projection of the first isolation pillar on the substrate; the orthographic projection of the light-emitting layer on the substrate does not overlap with the orthographic projection of the second isolation pillar on the substrate.

[0034] In some embodiments, the method further includes:

[0035] A cathode layer is formed on the side of the light-emitting layer away from the substrate; the orthographic projection of the cathode layer on the substrate does not overlap with the orthographic projection of the first isolation pillar on the substrate; the orthographic projection of the cathode layer on the substrate does not overlap with the orthographic projection of the second isolation pillar on the substrate. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1a This is a schematic diagram of the structure of the display substrate according to an embodiment of this application;

[0038] Figure 1b for Figure 1a K of the display substrate + A schematic diagram illustrating a mechanism of ion electrochemical corrosion.

[0039] Figure 1c for Figure 1a K of the display substrate + Another mechanism diagram of ion electrochemical corrosion;

[0040] Figure 1d for Figure 1a Another mechanism diagram of K+ ion electrochemical corrosion of display substrates;

[0041] Figure 1e for Figure 1b Enlarged view of the isolation column at point A;

[0042] Figure 2 A diagram illustrating the AgPT generation mechanism in a display substrate;

[0043] Figure 3 This is another structural schematic diagram of the display substrate according to an embodiment of this application;

[0044] Figure 4 This is a schematic diagram of the partitioning of the display substrate according to an embodiment of this application;

[0045] Figure 5 This is a schematic diagram of the structure of the first isolation column / second isolation column according to an embodiment of this application;

[0046] Figure 6 This is yet another structural schematic diagram of the first isolation column / second isolation column according to an embodiment of this application;

[0047] Figure 7 This is a layout of the first isolation pillar / second isolation pillar according to an embodiment of this application;

[0048] Figure 8 This is yet another layout of the first isolation pillar / second isolation pillar according to the embodiments of this application;

[0049] Figure 9 This is yet another layout of the first isolation pillar / second isolation pillar according to the embodiments of this application;

[0050] Figure 10 This is a schematic diagram of the process for fabricating a display substrate according to an embodiment of this application;

[0051] Figure 11a This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0052] Figure 11b This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0053] Figure 11c This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0054] Figure 11d This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0055] Figure 11e This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0056] Figure 11f This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0057] Figure 11g This is a schematic diagram of the structure of the first isolation column and the second isolation column obtained by a preparation method according to an embodiment of this application;

[0058] Figure 11h This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0059] Figure 11i This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0060] Figure 11j This is a schematic diagram of the intermediate structure during the preparation process of the first isolation column in an embodiment of this application;

[0061] Figure 11k This is a schematic diagram of the structure of the first and second isolation columns obtained by another preparation method according to an embodiment of this application;

[0062] Figure 12a This is a schematic diagram of another intermediate structure in the preparation process of the isolation column according to an embodiment of this application;

[0063] Figure 12b This is a schematic diagram of another intermediate structure in the preparation process of the isolation column according to an embodiment of this application;

[0064] Figure 12c This is a schematic diagram of another intermediate structure in the preparation process of the isolation column according to an embodiment of this application;

[0065] Figure 12d This is a schematic diagram of another intermediate structure in the preparation process of the isolation column according to an embodiment of this application;

[0066] Figure 13a This is a schematic diagram of a FICD mask used in an embodiment of this application;

[0067] Figure 13b This is a schematic diagram of a MASK CD according to an embodiment of this application;

[0068] Figure 14 This is a cross-sectional view of the display area of ​​the display substrate in an embodiment of this application;

[0069] Figure 15a This is a cross-sectional view of the isolation region in an embodiment of this application;

[0070] Figure 15b for Figure 15a Enlarged view of point B in the middle;

[0071] Figure 15c for Figure 15a Enlarged view of point C in the middle.

[0072] The following are explanations of the reference numerals in the attached figures:

[0073] 1-Substrate; 11-Display area; 12-Peripheral area; 13-Aperture area; 14-Isolation area; 15-Metal auxiliary layer; 2-First shielding layer; 3-Buffer layer; 40-Active layer; 41-First gate layer; 42-First gate insulating layer; 43-Interlayer dielectric layer; 431-First source / drain layer; 44-First planarization layer; 45-Second gate layer; 46-Second gate insulating layer; 461-Third gate insulating layer; 462-Third gate layer; 463-Second source / drain layer; 47-Second planarization layer; 48-Third source / drain layer; 49-Third planarization layer; 51-EL material layer; 511-Pixel boundary 512-Anode layer; 52-Cathode layer; 53-First inorganic layer; 54-Silver ion; 61-First isolation pillar; 611-First aluminum layer; 612-First part; 613-Second part; 614-Third part; 615-First titanium layer; 616-Second titanium layer; 64-Second isolation pillar; 641-Second aluminum layer; 642-Third titanium layer; 643-Fourth titanium layer; 7-Metal backplate; 81-First encapsulation layer; 82-Second encapsulation layer; 83-Third encapsulation layer; 84-Second shielding layer; 85-Touch insulating layer; 86-Touch layer; 9-Polarizing layer; 91-Mask; 92-Barrier. Detailed Implementation

[0074] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0075] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0076] In some embodiments, a high proportion of growing dark spot (GDSH) occurs in the AA Hole region, affecting product yield and reliability. Key issues include: silver particles easily accumulate during etching of the isolation pillars located on the same layer as the source / drain layer (SD); K + Ion electrochemical corrosion, such as Figures 1b to 1e As shown, the presence of residual pixel boundary layer (HPDL) adhesive on the inner and outer isolation pillars at the AA Hole, coupled with insufficient density of the inorganic layer (CVD), accelerates the water-oxygen pathway, leading to encapsulation failure.

[0077] During etching, the etching solution in the wet etching process mainly consists of corrosive acids such as AgNO3 (silver nitrate). The silver ions in this solution will undergo a dissolution and displacement reaction with the aluminum (Al) of the isolation pillar material (e.g., the first aluminum layer 611 or the second aluminum layer 641). Figure 2 As shown, Ag particles are generated. The substitution reaction can be Al + 3AgNO3 = 3Ag(↓) + Ag(NO3)3. This results in the precipitation of Ag (silver) particles on the surface of the isolation pillar, which leads to a decrease in the blocking effect between the EL material layer 51 and the cathode layer 52.

[0078] Among them, such as Figure 1a and Figure 1b As shown, K + The main cause of ion electrochemical corrosion is the presence of K in polarizer 9 (POL). + Ions migrate to the AA Hole isolation pillars and, in a water-oxygen environment, undergo electrochemical reactions with the encapsulation layer, compromising encapsulation reliability and reducing product yield. The main reason is that, during reliability evaluation, although the cathode (CTD) and organic material (EL material) are isolated, there is still an overlap with the SD isolation pillars (Ti / Al / Ti) (e.g., ...). Figure 1e (As shown). Thus, during reliable storage and operation, the entire AA area will have an ELVSS (-4.6V) current flowing to the CTD (cathode layer 52), resulting in a negative ELVSS voltage above and below the SD isolation pillars. This, combined with the metal backplate 7 (MP, 0V) of the module (MDL), forms an AA Hole area electric field, as shown. Figure 1b , Figure 1c and Figure 1d As shown. Under conditions of water, oxygen, and humidity (alkaline environment), K + It will severely cut the edge and migrate towards the isolation pillar area. During the migration process, it gradually corrodes the encapsulation layer (SiNx, SiOx), thereby destroying the encapsulation structure and leading to poor product reliability. The corrosion reaction can be represented by equation e. - +H₂O→OH - +H₂↑. SiO₂ + 2OH⁻- →SiO3 2- +H₂O. SI₃N₄ + 6KOH + 3H₂O = 3K₂SO₃ + 4NH₃↑. Therefore, there is a GDSH problem due to residual EL material / cathode in the AA Hole region.

[0079] In view of this, embodiments of this application provide a display substrate that, by covering the isolation pillars with an inorganic layer (PVX), can to a certain extent block the electric field in the AA Hole region. After fabricating the pixel defining layer, the inorganic layer is then dry-etched and the isolation pillars are wet-etched. During the wet etching of the isolation pillars, because the etching rate of the etchant on the metal is greater than the etching rate on the inorganic layer, an undercut is formed in the isolation pillars. Figure 6 As shown, this allows the aluminum in the isolation column to be isolated from the Ag in the anolyte etching solution when the isolation column is de-energized. + This will help to improve GDSH.

[0080] like Figure 3 As shown, this is a display substrate provided in an embodiment of this application. The display substrate can adopt an AA Hole design. The display substrate may include:

[0081] Substrate 1; the substrate 1 has a display area 11 and a peripheral area 12; the peripheral area 12 is located on the outer periphery of the display area 11; the display area 11 includes an opening area 13 and an isolation area 14 disposed around the opening area 13;

[0082] A barrier wall 92 is disposed in the isolation zone 14 and surrounds the opening zone 13;

[0083] The display substrate includes a plurality of first isolation pillars 61; the plurality of first isolation pillars 61 are spaced apart in the isolation area 14 and are located on the side of the barrier wall 92 near the display area 11;

[0084] The first inorganic layer 53 is disposed on the side of the first isolation pillar 61 away from the substrate 1;

[0085] Wherein, at least the first isolation pillar 61 closest to the display area 11 includes a first portion 612 and a second portion 613; the first portion 612 and the second portion 613 extend along a first direction; the orthographic projection of the first portion 612 on the substrate 1 exceeds the orthographic projection of the inorganic layer on the substrate 1; the orthographic projection of the second portion 613 on the substrate 1 is located within the orthographic projection of the inorganic layer on the substrate 1; the first direction is the direction extending from the display area 11 to the isolation area 14.

[0086] In some embodiments, the substrate 1 can be a flexible substrate, such as a plate-like structure made of polymers such as polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PED), polyaryl compounds (PAR), or glass fiber reinforced plastic (FRP).

[0087] In some of these embodiments, such as Figure 4 As shown, the substrate 1 may include a display area 11 and a peripheral area 12 surrounding the display area 11. Typically, the display area 11 is the area used to implement the display function, and the peripheral area 12 is the area where display is not possible, usually located on the outer periphery of the display area 11. An opening area 13 is formed within the display area 11, and an isolation area 14 is disposed around the opening area 13. The area of ​​the display area 11 excluding the opening area 13 and the isolation area 14 is the effective display area 11. By providing the isolation area 14, it is possible to prevent water and oxygen in the air from penetrating into the effective display area 11 of the display substrate along the light-emitting continuous layer at the opening boundary, such as the EL material layer 51 and the cathode layer 52. Exemplarily, the opening area 13 may have a groove or an opening. After the various film layers of the display substrate are prepared, a portion of the film layer of the opening area 13 can be removed to form a groove recessed relative to other areas, or all the film layers of the opening area 13 can be removed to form an opening. Exemplarily, at least a portion of the structure of a sensor such as a camera is located within the groove or opening.

[0088] In some of these embodiments, see further. Figure 3 and Figure 14 A metal backplate 7 may be provided on the side of the substrate 1 away from the isolation pillar. The metal backplate 7 can be used for heat dissipation.

[0089] In some of these embodiments, see further. Figure 3 and Figure 14 A metal auxiliary layer 15, a buffer layer 3, a first shielding layer 2, an active layer 40, and a driving circuit layer may be stacked on the substrate 1. Figure 14 , Figure 15a , Figure 15b and Figure 15cAs shown, the driving circuit layer may include a first gate layer 41, a first gate insulating layer 42, a first source-drain layer 431, a first planarization layer 44, a second gate layer 45, a second gate insulating layer 46, a second source-drain layer 463, a second planarization layer 47, a third gate layer 462, a third gate insulating layer 461, a third source-drain layer 48, and a third planarization layer 49. An inorganic layer (e.g., a passivation layer) may also be provided. For example, a first inorganic layer 53 (e.g., a passivation layer) may be provided between the first source-drain layer 431 and the first planarization layer 44. A third inorganic layer (e.g., a passivation layer) may also be provided between the third source-drain layer 48 and the third planarization layer 49.

[0090] In some embodiments, the second source / drain layer 463, the third source / drain layer 48, and the first source / drain layer 431 can be composite layer structures of titanium / aluminum / titanium, that is, the second source / drain layer 463, the third source / drain layer 48, and the first source / drain layer 431 can adopt a Ti (titanium) / Al (aluminum) / Ti stacked metal structure. The titanium layer has certain protective functions such as corrosion resistance.

[0091] In some of these embodiments, such as Figure 14 and Figure 15a As shown, the first planarization layer 44 is used to planarize the first source-drain layer 431 and to provide insulation to a certain extent, preventing short circuits between the first source-drain layer 431 and the second source-drain layer 463. The second planarization layer 47 is used to planarize the second source-drain layer 463 and to provide insulation to a certain extent, preventing short circuits between the second source-drain layer 463 and the third source-drain layer 48. The third planarization layer 49 is used to planarize the third source-drain layer 48, facilitating the subsequent fabrication of the pixel defining layer 511. That is, the first source-drain layer 431 is disposed on the side of the second source-drain layer 463 closest to the substrate 1. The first planarization layer 44 is disposed between the second source-drain layer 463 and the first source-drain layer 431. The second planarization layer 47 is disposed between the second source-drain layer 463 and the third source-drain layer 48.

[0092] In some embodiments, a light-emitting device layer may be disposed on the side of the driving circuit layer away from the substrate 1. The light-emitting device layer may include: an anode layer 531, a pixel defining layer 511, a light-emitting functional layer (including the light-emitting layer and the EL material layers 51 on both sides thereon), and a cathode layer 52.

[0093] In some embodiments, reference Figure 1bAs shown, an encapsulation layer may be provided on the side of the light-emitting device layer away from the substrate 1. Typically, the encapsulation layer may include a first encapsulation layer 81, a second encapsulation layer 82, and a third encapsulation layer 83 stacked in a direction away from the substrate 1. Typically, the first and third encapsulation layers may be inorganic layers, and the second encapsulation layer may be an organic layer.

[0094] In some embodiments, a second shielding layer 84, a touch insulating layer 85, a touch layer 86, and a polarizing layer 9 may also be provided on the side of the encapsulation layer away from the substrate 1.

[0095] In some embodiments, a barrier wall 92 may be provided in the isolation region 14. The barrier wall 92 may be disposed around the opening region 13. Typically, the barrier wall 92 may be disposed on the same layer as at least one of the first planarization layer 44, the second planarization layer 47, the third planarization layer 49, and the pixel defining layer 511. By providing the barrier wall 92, the overflow of the organic layer in the encapsulation layer can be prevented, thereby avoiding poor film formation of the third inorganic layer and thus avoiding encapsulation failure.

[0096] In some embodiments, multiple isolation pillars may be provided in the isolation zone 14 to form an isolation pillar group. By providing isolation pillars, the cathode layer 52 and the EL material layer 51 can be blocked. The isolation pillar group may include a first isolation pillar 61 (e.g., an inner isolation pillar) provided on the side of the barrier wall 92 near the display area 11, and a second isolation pillar 64 (e.g., an outer isolation pillar) provided on the side of the barrier wall 92 away from the display area 11.

[0097] In some of these embodiments, such as Figure 3 and Figure 6 As shown, the first isolation pillar 61 can be disposed in the same layer as the first source / drain layer 431. The first inorganic layer 53 can partially cover the first isolation pillar 61. The orthographic projection of the first isolation pillar 61 onto the substrate 1 can overlap with the orthographic projection portion of the first inorganic layer 53 onto the substrate 1. In the cross-sectional view, as shown... Figure 5 and Figure 6 As shown, the side of the first inorganic layer 53 near the display area 11 can cover the first isolation column 61.

[0098] In some embodiments, a notch may be formed at least on the side of the first isolation pillar 61 closest to the display area 11 that is away from the display area 11. That is, a notch may be formed only in the first isolation pillar 61 on the side closest to the display area 11, or a notch may be formed in all the first isolation pillars 61. The orthographic projection of the first isolation pillar 61 with the notch onto the substrate 1 may exceed the orthographic projection of the inorganic layer onto the substrate 1, and overlap with the orthographic projection portion of the inorganic layer onto the substrate 1. The side of the first isolation pillar 61 away from the display area 11 may be stepped. That is, in the first isolation pillar 61 with the notch, the first portion 612 and the second portion 613 are integrally stepped with the aluminum layer of the first source / drain layer 431, such as... Figure 6 As shown. In the first isolation pillar 61 without the first notch, the orthographic projection of the first portion 612 onto the substrate 1 almost overlaps with the orthographic projection of the second portion 613 onto the substrate 1, and is located within the orthographic projection of the first inorganic layer 53 onto the substrate 1, as shown. Figure 5 As shown.

[0099] In some embodiments, reference Figure 6 As shown, in the notched isolation pillars (e.g., the first isolation pillar 61 or the second isolation pillar 64), the orthographic projection of the second portion 613 onto the substrate 1 exceeds the orthographic projection of the first inorganic layer 53 onto the substrate 1. (See reference...) Figure 7 and Figure 11h As shown, before the final isolation pillars (e.g., the first isolation pillar 61 or the second isolation pillar 64) are formed through a wet etching process, the orthographic projection of the first inorganic layer 53 onto the substrate 1 can be located within the orthographic projection of the aluminum layer (e.g., the first aluminum layer 611) onto the substrate 1. Specifically, the minimum distance d1 between the edge of the orthographic projection of the first inorganic layer 53 onto the substrate 1 and the edge of the orthographic projection of the aluminum layer onto the substrate 1 can be approximately 5 μm. Figure 7 As shown. Reference Figure 8 As shown, in the isolation pillars without notches (e.g., the first isolation pillar 61 or the second isolation pillar 64), the orthographic projection of the first inorganic layer 53 onto the substrate 1 extends beyond the orthographic projection of the aluminum layer in the isolation pillar (e.g., the first isolation pillar 61 or the second isolation pillar 64) onto the substrate 1. For example, the minimum distance d2 between the edge of the orthographic projection of the first inorganic layer 53 onto the substrate 1 and the edge of the orthographic projection of the aluminum layer in the isolation pillar (e.g., the first isolation pillar 61 or the second isolation pillar 64) onto the substrate 1 can be approximately 1.8 μm.

[0100] In some embodiments, the size of the first portion 612 may be smaller than the size of the second portion 613 in the second direction. The second direction is perpendicular to the first direction. That is, the thickness of the first portion 612 may be smaller than the thickness of the second portion 613.

[0101] In some embodiments, the first isolation pillar 61 may further include a third portion 614, which may be disposed on the side of the first portion 612 near the substrate 1; the orthographic projection of the third portion 614 onto the substrate 1 exceeds the orthographic projection of the first portion 612 onto the substrate 1. The first portion 612 and the second portion 613 are both disposed in the same layer as the aluminum layer of the first source / drain layer 431; the third portion 614 is disposed in the same layer as the titanium layer of the first source / drain layer 431 on the side near the substrate 1.

[0102] In some embodiments, the first inorganic layer 53 may be disconnected at the interval between adjacent first isolation pillars 61, for example, the first inorganic layer 53 may be disconnected at the interval between the first isolation pillar 61 closest to the display area 11 and the adjacent first isolation pillar 61.

[0103] In some embodiments, the second isolation pillar 64 may be disposed in the same layer as the third source / drain layer 48. The second isolation pillar 64 may have the same structure as the third source / drain layer 48, including a titanium / aluminum / titanium composite layer structure. The second isolation pillar 64 may not be covered by an inorganic layer (e.g., a third inorganic layer), such as... Figure 11g or Figure 11k As shown, this simplifies the process. The second isolation pillar 64 can also be partially covered by an inorganic layer (e.g., a third inorganic layer), for example, it can have the same structure as the aforementioned first isolation pillar 61, to better prevent the second aluminum layer 641 in the second isolation pillar 64 from reacting with Ag in the etching solution. + The replacement ensures that the generation of AgPT is isolated throughout the entire isolation zone 14.

[0104] In some embodiments, the third inorganic layer may partially cover the second isolation pillar 64. The orthographic projection of the second isolation pillar 64 onto the substrate 1 may overlap with the orthographic projection of the third inorganic layer onto the substrate 1. In a cross-sectional view, reference can be made to... Figure 5 and Figure 6 As shown, the third inorganic layer can cover the third isolation column on the side near the display area 11.

[0105] In some embodiments, a notch may be made at least on the side of the second isolation pillar 64 closest to the display area 11 that is away from the display area 11. Specific structures can be found in [reference needed]. Figure 6As shown in the structure of the first isolation pillar 61, a notch can be provided only in the second isolation pillar 64 closest to the display area 11 among all the second isolation pillars 64, or a notch can be provided in all the second isolation pillars 64. The orthographic projection of the second isolation pillar 64 with the notch onto the substrate 1 can extend beyond the orthographic projection of the third inorganic layer onto the substrate 1, and overlap with the orthographic projection portion of the third inorganic layer onto the substrate 1. The side of the second isolation pillar 64 away from the display area 11 can be stepped. That is, in the second isolation pillar 64 with the notch, the fourth portion and the fifth portion are integrally stepped. In the second isolation pillar 64 without the notch, the orthographic projections of the fourth portion and the fifth portion onto the substrate 1 almost overlap, and are located within the orthographic projection of the third inorganic layer onto the substrate 1.

[0106] In some embodiments, the size of the fourth portion may be smaller than the size of the fifth portion in the second direction. The second direction is perpendicular to the first direction. That is, the thickness of the fourth portion may be less than the thickness of the fifth portion.

[0107] In some embodiments, the second isolation pillar 64 may further include a sixth portion, which may be disposed on the side of the fourth portion near the substrate 1; the orthographic projection of the sixth portion on the substrate 1 exceeds the orthographic projection of the fourth portion on the substrate 1. The fourth and fifth portions are both disposed in the same layer as the aluminum layer of the third source / drain layer 48; the sixth portion is disposed in the same layer as the titanium layer of the third source / drain layer 48 near the substrate 1.

[0108] In some embodiments, the third inorganic layer may be disconnected at the interval between adjacent second isolation pillars 64. That is, the third inorganic layer is disconnected at the interval between the second isolation pillar 64 closest to the display area 11 and the adjacent second isolation pillar 64.

[0109] This can better avoid the impact of the deposited silver particles on the blocking effect of the EL material layer 51 and the cathode layer 52.

[0110] In some embodiments, the orthographic projection of the light-emitting layer onto the substrate 1 does not overlap with the orthographic projection of the first isolation pillar 61 onto the substrate 1; the orthographic projection of the light-emitting layer onto the substrate 1 does not overlap with the orthographic projection of the second isolation pillar 64 onto the substrate 1. This allows for better blocking of the light-emitting layer and the cathode, and better avoids the potential difference formed between the residual EL material / cathode in the AA Hole region and the metal backplate 7, and the K-rays migrating from the polarizer. + An electrochemical reaction occurs, leading to GDSH problems.

[0111] In some embodiments, the orthographic projection of the cathode layer 52 onto the substrate 1 does not overlap with the orthographic projection of the first isolation pillar 61 onto the substrate 1; the orthographic projection of the cathode layer 52 onto the substrate 1 does not overlap with the orthographic projection of the second isolation pillar 64 onto the substrate 1. This allows for better blocking of the light-emitting layer and the cathode, and better avoids the GDSH problem caused by the potential difference formed between the residual EL material / cathode in the AA Hole region and the metal backplate 7, and the electrochemical reaction with K+ migrating from the polarizer.

[0112] Based on the same inventive concept, corresponding to the display substrate of any of the above embodiments, this application also provides a method for preparing the display substrate of the present application embodiments.

[0113] refer to Figure 10 As shown, the method for fabricating a display substrate may include:

[0114] Step S100: Provide a substrate 1; the substrate 1 has a display area 11 and a peripheral area 12; the peripheral area 12 is located on the outer periphery of the display area 11; the display area 11 includes an opening area 13 and an isolation area 14 disposed around the opening area 13;

[0115] Step S200: A plurality of first isolation pillars 61 are formed in the isolation zone 14; the plurality of first isolation pillars 61 are spaced apart.

[0116] Step S300: A first inorganic layer 53 is formed on the side of the first isolation pillar 61 away from the substrate 1;

[0117] Step S400: A barrier wall 92 is formed in the isolation zone 14; the barrier wall 92 is disposed on the side of the first isolation column 61 away from the display area 11 and surrounds the opening area 13;

[0118] The first isolation pillar 61, which is closest to the display area 11, includes a first portion 612 and a second portion 613. The first portion 612 and the second portion 613 extend along a first direction. The orthographic projection of the first portion 612 onto the substrate 1 exceeds the orthographic projection of the first inorganic layer 53 onto the substrate 1. The orthographic projection of the second portion 613 onto the substrate 1 is located within the orthographic projection of the first inorganic layer 53 onto the substrate 1. The first direction is the direction of extension from the display area 11 to the isolation area 14.

[0119] In some embodiments, the first inorganic layer 53 covers the first isolation pillar 61 on the side near the display area 11; the first portion 612 and the second portion 613 are generally stepped.

[0120] In some embodiments, in the second direction, the size of the first portion 612 is smaller than the size of the second portion 613; the second direction is perpendicular to the first direction.

[0121] In some embodiments, forming a plurality of first isolation pillars 61 may include forming a first inorganic layer 53 on the side of the first isolation pillars 61 away from the substrate 1 and etching the first inorganic layer 53 so that, in a second direction, the orthographic projection of the first inorganic layer 53 onto the substrate 1 is located within the orthographic projection of the first isolation pillars 61 onto the substrate 1.

[0122] In some embodiments, in step S100, the substrate 11 can be a flexible substrate, such as a plate-like structure made of polymers such as polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PED), polyaryl compounds (PAR), or glass fiber reinforced plastic (FRP).

[0123] In some embodiments, the display substrate further includes a first source-drain layer 431 and a third source-drain layer 48. The first isolation pillar 61 may be disposed in the same layer as the first source-drain layer 431. The second isolation pillar 64 is disposed in the same layer as the third source-drain layer 48. The method may further include: simultaneously forming the third source-drain layer 48 and the second isolation pillar 64; the second isolation pillar 64 is disposed on the side of the barrier wall 92 away from the substrate 1; forming an anode layer 531 and a pixel defining layer 511. The second isolation pillar 64 may not be covered by an inorganic layer, or it may be covered by a third inorganic layer. That is, the method further includes forming a third inorganic layer on the side of the third source-drain layer 48 away from the substrate 1.

[0124] In some embodiments, the structure of the first isolation pillar 61 can be as follows: Figure 6 As shown, the first isolation pillar 61 can be partially covered by the first inorganic layer 53, and the structure of the second isolation pillar 64 can be as follows: Figure 11g As shown, the second isolation column 64 is not covered by the third inorganic layer. This is possible. Figures 11a to 11g The preparation method shown is used to prepare all the first isolation columns 61 and all the second isolation columns 64. Alternatively, the following method can be used... Figures 11a to 11g The preparation method shown is used to prepare part of the first isolation column 61 and part of the second isolation column 64, while employing Figures 11a to 11b ,as well as Figures 11h to 11kThe preparation method shown is used to prepare part of the first isolation column 61 and part of the second isolation column 64.

[0125] In some embodiments, forming a plurality of first isolation pillars 61 in the isolation zone 14 may include:

[0126] A first source / drain layer 431 and a first isolation pillar 61 precursor are formed; the first source / drain layer 431 includes a titanium-aluminum-titanium composite hierarchical structure, such as... Figure 11a / Figure 12a As shown;

[0127] Remove the titanium layer on the side of the first isolation pillar 61 precursor away from the substrate 1. Specifically, the titanium layer on the side of the first isolation pillar 61 precursor away from the substrate 1 can be removed using a TTE (Top Ti Etch) process, such as... Figure 11b / Figure 12b As shown.

[0128] Next, the first inorganic layer 53 can be covered on the first isolation column 61 using only the first method, as follows: Figure 11c As shown; alternatively, while employing the first method, a second method can be used to cover the first isolation column 61 with a first inorganic layer 53, such as... Figure 11h / Figure 12c As shown. In the first method, the first inorganic layer 53 completely covers the first isolation pillar 61. In the second method, the first inorganic layer 53 only covers part of the first isolation pillar 61. In the second direction, the orthogonal projection of the first aluminum layer 611 onto the substrate 1 exceeds the orthogonal projection of the first inorganic layer 53 onto the substrate 1.

[0129] In the first method, after covering the first inorganic layer 53, a first planarization layer 44 can be prepared. After preparing the first planarization layer 44, a second source / drain layer 463 can be prepared. Typically, after the second source / drain layer 463 is formed, the structure of the first isolation pillar 61 remains unchanged. Figure 11c As shown. Next, the second planarization layer 47 is fabricated. After fabricating the second planarization layer 47, the third source / drain layer 48 and the third isolation pillar can be fabricated. At this time, the structure of the first isolation pillar 61 remains unchanged, and can be fabricated as shown. Figure 11d As shown. Next, a third planarization layer 49 can be prepared. After preparing the third planarization layer 49, an anode layer 531 can be prepared. During the preparation of the anode layer 531, since the first isolation pillar 61 is covered by the first inorganic layer 53, the first aluminum layer 611 in the first isolation pillar 61 will not react with the Ag in the anode etching solution. + Replacement. Since the second aluminum layer 641 in the second isolation column 64 is not covered by the inorganic layer, it will be partially corroded by the anodic etching solution and may react with Ag in the anodic etching solution. +Displacement, such as Figure 11e As shown. Next, the pixel defining layer 511 is prepared. Afterwards, a first etching process can be performed, such as a dry etching process, to etch away part of the first inorganic layer 53. Specifically, it can be done as follows: Figure 3 The hole mask shown is etched (e.g., dry etched), and the layout is as follows. Figure 9 As shown, a portion of the first inorganic layer 53 is etched away to form a layer as shown. Figure 11f The first isolation post 61 and the second isolation post 64 are shown. Next, the following will be used... Figure 3 The hole mask shown is etched (e.g., wet etched) to ultimately form a shape like... Figure 11g The first isolation column 61 and the second isolation column 64 shown are thus completed.

[0130] In the second method, after covering the first inorganic layer 53, a first planarization layer 44 can be prepared. After preparing the first planarization layer 44, a second source / drain layer 463 can be prepared. Typically, after the second source / drain layer 463 is formed, the structure of the first isolation pillar 61 changes, as shown below. Figure 11i As shown. In the first aluminum layer 611, the portion not covered by the first inorganic layer 53 is etched away on the side away from the substrate 1, while the side closer to the substrate 1 remains. Next, a second planarization layer 47 is fabricated. After fabricating the second planarization layer 47, a third source / drain layer 48 and a third isolation pillar can be fabricated. At this time, the structure of the first isolation pillar 61 continues to change, as shown... Figure 11j or Figure 12d As shown. In this process, the portion of the first aluminum layer 611 not covered by the first inorganic layer 53, i.e., the side closest to the substrate 1, is etched. After preparing the third planarization layer 49, the anode layer 531 can be prepared. During the preparation of the anode layer 531, some of the portion of the first aluminum layer 611 not covered by the first inorganic layer 53 will be corroded by the anode etching solution, and may come into contact with Ag in the anode etching solution. + Displacement, such as Figure 11k or Figure 5 As shown.

[0131] In some embodiments, reference Figure 3 As shown, performing the first etching may include:

[0132] A hole mask is provided; the hole mask has at least one opening; at least the orthographic projection of the opening onto the substrate 1 corresponds to the orthographic projection of the first isolation pillar 61 closest to the display area 11 onto the substrate 1. It should be understood that the number of openings can be one or more. The multiple openings correspond one-to-one with the positions of multiple first isolation pillars 61. The dimensions of the openings can include d3 and d4. Wherein d3 is approximately 1.8 and d4 is approximately 5.

[0133] The first inorganic layer 53 is etched so that, in the second direction, the orthographic projection of the first inorganic layer 53 onto the substrate 1 lies within the orthographic projection of the first isolation pillar 61 onto the substrate 1. Specifically, the first inorganic layer 53 can be etched using a dry etching process. After process verification, using a mask 91 of this size and a dry etching process, the dimension d5 (i.e., the FICD (final inspection critical dimension) of the etched first inorganic layer (e.g., the first inorganic layer 53a) in the first direction is, for example, 1.8. Figure 13a As shown, the dimension at that location in the opening (i.e., the Mask Critical Dimension) is very close to (e.g., 1.8, as shown) Figure 13b (As shown). Therefore, the mask 91 and dry etching process of this application embodiment have good etching accuracy.

[0134] In some embodiments, performing the second etching may include etching the isolation pillar (first isolation pillar 61) using a wet etching method. This may include:

[0135] A hole mask is provided; the hole mask has at least one opening; at least the orthographic projection of the opening onto the substrate 1 corresponds to the orthographic projection of the first isolation pillar 61 closest to the display area 11 onto the substrate 1. The hole mask here has the same structure and pattern as the hole mask for etching the first inorganic layer 53 described above.

[0136] At least the first isolation pillar 61 closest to the display area 11 is etched, such that at least the first isolation pillar 61 closest to the display area 11 includes a first portion 612 and a second portion 613. That is, all or part of the first isolation pillars 61 can be etched simultaneously, or only the first isolation pillar 61 closest to the display area 11 can be etched.

[0137] Since the etching rate of wet etching solution on metals is generally greater than that on inorganic materials, and the etching rate of etchant on the upper metal layer is generally greater than that on the lower metal layer, a chamfered structure can be formed in the aluminum metal layer of the first isolation pillar 61 after wet etching. This results in the first portion 612 of the first isolation pillar 61 having its orthographic projection on the substrate 1 exceeding the orthographic projection of the first inorganic layer 53 on the substrate 1; and the second portion 613 having its orthographic projection on the substrate 1 located within the orthographic projection of the first inorganic layer 53 on the substrate 1.

[0138] In this way, during anode fabrication, the first inorganic layer 53 can isolate the metal anions in the etching solution used for wet etching of the anode, and also isolate the silver ions 54. When etching the first aluminum layer 611 of the first isolation pillar 61, an etching solution free of silver ions 54 can be used. This ensures that the aluminum in the first isolation pillar 61 is isolated from the Ag+ in the wet etching solution even when the first isolation pillar 61 is de-energized, thereby better improving GDSH. It should be noted that the process for etching the second isolation pillar 64 can be the same, and will not be elaborated further here.

[0139] In some embodiments, the method further includes forming a light-emitting layer on the side of the second isolation pillar 64 away from the substrate 1; wherein the orthographic projection of the light-emitting layer on the substrate 1 does not overlap with the orthographic projection of the first isolation pillar 61 on the substrate 1; and the orthographic projection of the light-emitting layer on the substrate 1 does not overlap with the orthographic projection of the second isolation pillar 64 on the substrate 1.

[0140] Specifically, after the first encapsulation layer 81 is formed, the first encapsulation layer 81 can be used as an etching auxiliary layer to remove the EL in the isolation pillar area by exposure etching. The EL material can be removed by gas dry etching.

[0141] This allows for better de-energization of the isolation column and better avoidance of GDSH caused by potassium ion migration.

[0142] In some embodiments, the method further includes forming a cathode layer 52 on the side of the light-emitting layer away from the substrate 1; the orthographic projection of the cathode layer 52 on the substrate 1 does not overlap with the orthographic projection of the first isolation pillar 61 on the substrate 1; the orthographic projection of the cathode layer 52 on the substrate 1 does not overlap with the orthographic projection of the second isolation pillar 64 on the substrate 1.

[0143] Specifically, after the first encapsulation layer 81 is formed, the first encapsulation layer 81 can be used as an etching auxiliary layer, and the CTD metal of the isolation pillar area can be removed by using a wet etching solution (e.g., the same wet etching solution as the anode layer 531).

[0144] This allows for better de-energization of the isolation column and better avoidance of GDSH caused by potassium ion migration.

[0145] Based on the same inventive concept, and corresponding to the display substrate of any of the above embodiments, this application also provides a display device.

[0146] The display device includes a display substrate as described in any of the preceding embodiments. The display device also includes a sensor located on one side of the display surface of the display substrate and directly opposite the opening area 13. The display device can be a mobile phone, tablet computer, vehicle screen, etc.

[0147] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application (including the claims) is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this application as described above, which are not provided in the details for the sake of brevity.

[0148] Additionally, to simplify the description and discussion, and to avoid obscuring the embodiments of this application, the well-known power / ground connections to integrated circuit (IC) chips and other components may or may not be shown in the provided drawings. Furthermore, the apparatus may be shown in block diagram form to avoid obscuring the embodiments of this application, and this also takes into account the fact that the details of the implementation of these block diagram apparatuses are highly dependent on the platform on which the embodiments of this application will be implemented (i.e., these details should be fully understood by those skilled in the art). While specific details (e.g., circuits) have been set forth to describe exemplary embodiments of this application, it will be apparent to those skilled in the art that the embodiments of this application can be implemented without these specific details or with variations thereof. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0149] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications, and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may be used with the embodiments discussed.

[0150] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A display substrate, characterized in that, include: Substrate; The substrate has a display area and a peripheral area surrounding the display area; The display area includes an opening area and an isolation area surrounding the opening area; A barrier wall is installed in the isolation zone and surrounds the opening area; The display substrate includes a plurality of first isolation pillars; the plurality of first isolation pillars are spaced apart in the isolation area and are located on the side of the barrier wall closer to the display area; The first inorganic layer is disposed on the side of the first isolation pillar away from the substrate. Wherein, at least the first isolation pillar closest to the display area includes a first portion and a second portion; the first portion and the second portion extend along a first direction; the orthographic projection of the first portion on the substrate exceeds the orthographic projection of the first inorganic layer on the substrate; the orthographic projection of the second portion on the substrate is located within the orthographic projection of the first inorganic layer on the substrate; the first direction is the direction of extension from the display area to the isolation area.

2. The display substrate according to claim 1, characterized in that, The first inorganic layer covers the first isolation column on the side closest to the display area; the first part and the second part are generally stepped.

3. The display substrate according to claim 1, characterized in that, In the second direction, the size of the first part is smaller than the size of the second part; the second direction is perpendicular to the first direction.

4. The display substrate according to claim 1, characterized in that, The display substrate further includes a first source-drain layer, and the first isolation pillar is disposed in the same layer as the first source-drain layer.

5. The display substrate according to claim 2, characterized in that, The first inorganic layer is disconnected at the interval between the first isolation pillar closest to the display area and the adjacent first isolation pillar.

6. The display substrate according to claim 4, characterized in that, The first source-drain layer is a titanium-aluminum-titanium composite layer structure; the first isolation pillar further includes a third part, which is disposed on the side of the first part close to the substrate; the orthographic projection of the third part on the substrate exceeds the orthographic projection of the first part on the substrate; The first part and the second part are both disposed in the same layer as the aluminum layer of the first source and drain layer; the third part is disposed in the same layer as the titanium layer of the first source and drain layer on the side closer to the substrate.

7. The display substrate according to claim 4, characterized in that, The display substrate further includes a plurality of second isolation pillars; the plurality of second isolation pillars are spaced apart on the side of the barrier wall away from the display area.

8. The display substrate according to claim 7, characterized in that, The display substrate further includes a third source-drain layer, which is disposed on the side of the first source-drain layer away from the substrate; the second isolation pillar is disposed in the same layer as the third source-drain layer. A third inorganic layer is disposed on the side of the second isolation pillar away from the substrate; wherein, at least the second isolation pillar closest to the display area includes a fourth portion and a fifth portion; the fourth portion and the fifth portion extend along a first direction; the orthographic projection of the fourth portion onto the substrate exceeds the orthographic projection of the third inorganic layer onto the substrate; the orthographic projection of the fifth portion onto the substrate is located within the orthographic projection of the third inorganic layer onto the substrate.

9. The display substrate according to claim 7, characterized in that, The display substrate further includes a light-emitting layer disposed on the side of the second isolation pillar away from the substrate; the orthographic projection of the light-emitting layer on the substrate does not overlap with the orthographic projection of the first isolation pillar on the substrate. The orthographic projection of the light-emitting layer onto the substrate does not overlap with the orthographic projection of the second isolation pillar onto the substrate.

10. The display substrate according to claim 8, characterized in that, The display substrate further includes a cathode layer disposed on the side of the second isolation pillar away from the substrate; the orthographic projection of the cathode layer on the substrate does not overlap with the orthographic projection of the first isolation pillar on the substrate; the orthographic projection of the cathode layer on the substrate does not overlap with the orthographic projection of the second isolation pillar on the substrate.

11. The display substrate according to claim 1, characterized in that, The display substrate further includes an encapsulation layer, a touch layer, and a polarizing layer disposed on the side of the first inorganic layer away from the substrate; the touch layer is disposed on the side of the encapsulation layer away from the substrate; and the polarizing layer is disposed on the side of the touch layer away from the substrate.

12. A display device, characterized in that, The display substrate as described in any one of claims 1-11.

13. The display device according to claim 12, characterized in that, The display device further includes a sensor located on one side of the display surface of the display substrate and directly opposite the opening area.

14. A method for preparing a display substrate, characterized in that, include: Provide substrates; The substrate has a display area and a peripheral area; The peripheral area is located on the outer periphery of the display area; The display area includes an opening area and an isolation area surrounding the opening area; A plurality of first isolation pillars are formed in the isolation zone; the plurality of first isolation pillars are spaced apart. A first inorganic layer is formed on the side of the first isolation pillar away from the substrate. A barrier wall is formed in the isolation zone; the barrier wall is located on the side of the first isolation column away from the display area and surrounds the opening area; Wherein, at least the first isolation pillar closest to the display area includes a first portion and a second portion; the first portion and the second portion extend along a first direction; the orthographic projection of the first portion onto the substrate exceeds the orthographic projection of the first inorganic layer onto the substrate; the orthographic projection of the second portion onto the substrate is located within the orthographic projection of the first inorganic layer onto the substrate. The first direction is the direction extending from the display area to the isolation area.

15. The method for preparing a display substrate according to claim 14, characterized in that, The method further includes: A second isolation pillar is formed on the side of the first inorganic layer away from the substrate. A light-emitting layer is formed on the side of the second isolation pillar away from the substrate; wherein the orthographic projection of the light-emitting layer on the substrate does not overlap with the orthographic projection of the first isolation pillar on the substrate; the orthographic projection of the light-emitting layer on the substrate does not overlap with the orthographic projection of the second isolation pillar on the substrate.

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