Display panel and display device

Abstract

This application discloses a display panel and a display device. The display panel includes a substrate, a light-emitting layer located on one side of the substrate, and an inorganic layer located on the side of the light-emitting layer away from the substrate. The inorganic layer includes at least one first sub-layer, the material of which includes a first inorganic material. The first inorganic material includes silicon-hydrogen bonds and nitrogen-hydrogen bonds. The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 25% and less than or equal to 40%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 10% and less than 15%. The display panel provided by this application has high luminous efficiency, strong fracture resistance, and good weather resistance, exhibiting excellent overall performance.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display panel and a display device. Background Technology

[0002] With the development of organic light-emitting display panel products, customers' requirements for display panel power consumption are increasing. To meet the low power consumption requirement, the inorganic film layer above the light-emitting device needs to have high optical transmittance. However, the inorganic film layer above the light-emitting device currently has an increased extinction coefficient, which limits the overall transmittance performance of the display panel.

[0003] Furthermore, the film layer above the light-emitting device often has a high refractive index layer to improve light extraction efficiency. The closer to the outer edge of the display screen, the greater the need for improved mechanical reliability. Therefore, an inorganic film layer with high mechanical reliability is required on the light-emitting side of the light-emitting device to ensure its mechanical performance. However, it is difficult to simultaneously achieve both high refractive index and mechanical reliability with a low extinction coefficient, thus affecting the overall performance of the display panel. Summary of the Invention

[0004] This application provides a display panel and a display device. The display panel has high luminous efficiency and strong fracture resistance. To achieve the above objectives, a first aspect of this application provides a display panel, comprising: substrate; A light-emitting layer is located on one side of the substrate; and, An inorganic layer is located on the side of the light-emitting layer away from the substrate, and includes multiple inorganic sublayers; The plurality of inorganic sublayers include at least one first sublayer, the material of the first sublayer being a first inorganic material, the first inorganic material including silicon-hydrogen bonds and nitrogen-hydrogen bonds, wherein the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 25% and less than or equal to 40%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 10% and less than 15%.

[0005] Optionally, in the first inorganic material, the molar ratio of silicon to nitrogen is greater than 1 and less than or equal to 1.3; and / or, The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is less than or equal to 30%; and / or, The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 2, compared with the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the first inorganic material to the total number of atoms in the first inorganic material.

[0006] Optionally, the plurality of inorganic sublayers further include at least one second sublayer, the at least one second sublayer being located on the side of the at least one first sublayer closer to the light-emitting layer; The material of the second sublayer includes a second inorganic material, which includes silicon-hydrogen bonds and nitrogen-hydrogen bonds; the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is greater than 34% and less than 40%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is greater than or equal to 10% and less than 15%; and the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is different from the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material.

[0007] Optionally, the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the second inorganic material to the total number of atoms in the second inorganic material, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the second inorganic material to the total number of atoms in the second inorganic material, are greater than or equal to 2.5.

[0008] Optionally, the extinction coefficient of the second sublayer in the blue light band is greater than the extinction coefficient of the first sublayer in the blue light band; and / or, The refractive index of the second sublayer is greater than that of the first sublayer; and / or, The fracture threshold of the second sublayer is less than that of the first sublayer.

[0009] Optionally, the extinction coefficient of the first sublayer in the blue light band is less than or equal to 0.002, and the extinction coefficient of the second sublayer in the blue light band is less than or equal to 0.005; and / or, The refractive index of the first sublayer is greater than or equal to 1.85, and the refractive index of the second sublayer is greater than or equal to 1.90.

[0010] Optionally, the thickness of the first sub-layer is greater than the thickness of the second sub-layer.

[0011] Optionally, the thickness of the first sublayer is greater than or equal to 0.2 micrometers and less than or equal to 0.4 micrometers, and the thickness of the second sublayer is greater than or equal to 0.1 micrometers and less than or equal to 0.3 micrometers.

[0012] Optionally, the display panel includes a touch structure, the touch structure including the at least one first sub-layer.

[0013] Optionally, the plurality of inorganic sublayers include at least one first sub-inorganic layer and at least one second sub-inorganic layer, wherein the at least one second sub-inorganic layer is located on the side of the at least one first sub-inorganic layer closer to the light-emitting layer; the first sub-inorganic layer includes at least one of the first sublayer and the second sublayer. The material of the second inorganic sublayer includes a third inorganic material, which includes silicon-hydrogen bonds and nitrogen-hydrogen bonds. The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 20% and less than or equal to 34%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than or equal to 20%; and the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is different from the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the first inorganic material to the total number of atoms in the first inorganic material.

[0014] Optionally, the third inorganic material satisfies at least one of conditions (a) and (b), or the third inorganic material satisfies at least one of conditions (c) and (d): (a) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 1.2 and less than 1.5 to the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material; (b) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 20% and less than or equal to 25%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 15% and less than or equal to 20%. (c) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 2.0 and less than 2.5 to the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material. (d) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 30% and less than or equal to 34%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than or equal to 15%.

[0015] Optionally, the extinction coefficient of the second sub-inorganic layer in the blue light band is less than or equal to 0.0025; and / or, The total thickness of the at least one second sub-inorganic layer is greater than the total thickness of the at least one first sub-inorganic layer; and / or, The fracture threshold of the second sub-inorganic layer is less than that of the first sub-inorganic layer.

[0016] Optionally, the first inorganic material comprises at least one of silicon nitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds, and silicon oxynitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds; and / or, The second inorganic material includes at least one of silicon nitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds, and silicon oxynitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds; and / or, The third inorganic material includes at least one of silicon nitride containing the silicon-hydrogen bond and the nitrogen-hydrogen bond, and silicon oxynitride containing the silicon-hydrogen bond and the nitrogen-hydrogen bond.

[0017] Optionally, the display panel further includes a first organic functional layer, wherein the at least one second sub-inorganic layer is located on the side of the first organic functional layer away from the light-emitting layer; The plurality of inorganic sub-layers further include at least one third sub-inorganic layer, wherein the at least one third sub-inorganic layer is located between the first organic functional layer and the light-emitting layer; The extinction coefficient of the third sub-inorganic layer is less than that of the first sub-inorganic layer.

[0018] Optionally, the plurality of inorganic sub-layers includes at least two stacked third sub-inorganic layers, and the extinction coefficient of any third sub-inorganic layer in the visible light band is less than 0.001.

[0019] Optionally, among the at least two stacked third sub-inorganic layers, the third sub-inorganic layer with the largest thickness has the smallest extinction coefficient.

[0020] Optionally, the display panel includes a touch structure and an encapsulation structure, wherein the encapsulation structure is located between the touch structure and the light-emitting layer; The touch structure includes at least one first sub-inorganic layer; the encapsulation structure includes at least one second sub-inorganic layer, the first organic functional layer, and at least one third sub-inorganic layer.

[0021] Optionally, any of the inorganic sublayers has an extinction coefficient and a thickness such that, under any light wave emitted by the light-emitting layer, the sum of the products of the film thickness of all the inorganic sublayers in the inorganic layer and the corresponding extinction coefficient is less than 0.003.

[0022] Optionally, the refractive index of any of the inorganic sublayers is greater than or equal to 1.4 and less than or equal to 2.3; and / or, The extinction coefficient of any of the inorganic sublayers is greater than or equal to 0 and less than or equal to 0.4.

[0023] A second aspect of this application also provides a display device, including the aforementioned display panel.

[0024] This application provides an embodiment of a display panel and a display device. The inorganic layer located on the light-emitting side of the light-emitting layer includes multiple inorganic sub-layers, each including at least one first sub-layer. The material of the first sub-layer includes a first inorganic material, comprising silicon-hydrogen bonds and nitrogen-hydrogen bonds. The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 25% and less than or equal to 40%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 10% and less than 15%. The first sub-layer provided in this application, while having a low extinction coefficient under visible light, can ensure excellent fracture resistance and weather resistance, while also possessing a high refractive index. Therefore, it helps to improve the luminous efficiency of the display panel while ensuring that the display panel also has impact resistance and a long service life.

[0025] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0027] Figure 1 A cross-sectional structural diagram of the touch structure provided in the embodiments of this application; Figure 2 A cross-sectional schematic diagram of the packaging structure provided in the embodiments of this application; Figure 3 This is a schematic cross-sectional view of a display panel provided in an embodiment of this application.

[0028] Explanation of reference numerals in the attached figures: 100, Display panel; 10, Substrate; 20, Light-emitting layer; 30, Inorganic layer; 31, First sub-inorganic layer; 32, Second sub-inorganic layer; 33, Third sub-inorganic layer; 311, First sub-layer; 312, Second sub-layer; 331, Third sub-layer; 332, Fourth sub-layer; 333, Fifth sub-layer; 40, First organic functional layer; 50, Second organic functional layer; 60, Encapsulation structure; 70, Touch structure; 71, First touch metal layer; 72, Second touch metal layer. Detailed Implementation

[0029] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0030] The film layer above the light-emitting device often includes a high-refractive-index film layer to improve light extraction efficiency. Furthermore, the closer to the outer edge of the display screen, the greater the need for improved mechanical reliability. Therefore, an inorganic film layer with excellent mechanical reliability is required on the outer edge of the display screen to ensure its mechanical performance. However, it is difficult to simultaneously achieve both high refractive index and mechanical reliability with a low extinction coefficient, thus affecting the overall performance of the display panel.

[0031] To solve the above problems, see [link to relevant documentation]. Figures 1 to 3 This application provides a display panel 100, including a substrate 10, a light-emitting layer 20 located on one side of the substrate 10, and an inorganic layer 30 located on the side of the light-emitting layer 20 away from the substrate 10. The inorganic layer 30 includes a plurality of inorganic sublayers, any one of which is located on the side of the light-emitting layer 20 away from the substrate 10.

[0032] The plurality of inorganic sublayers include at least one first sublayer 311, the first sublayer 311 includes a first inorganic material, the first inorganic material includes silicon-hydrogen bonds and nitrogen-hydrogen bonds, and the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 25% and less than or equal to 40%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 10% and less than 15%.

[0033] In this embodiment, the first sublayer 311 has a low extinction coefficient for visible light, while ensuring that the first sublayer 311 has excellent fracture resistance and weather resistance, and also has a high refractive index, which helps to improve the luminous efficiency of the display panel 100 while ensuring that the display panel 100 has both impact resistance and a long service life.

[0034] It is understood that in the embodiments of this application, any inorganic sublayer is a single-layer structure, and multiple inorganic sublayers are stacked sequentially in the direction away from the light-emitting layer.

[0035] It is understood that in the embodiments of this application, the light-emitting layer 20 includes a plurality of light-emitting devices, and the substrate 10 is used to drive the light-emitting devices; the substrate 10 includes a substrate and a thin-film transistor layer disposed on the substrate.

[0036] In some embodiments, the substrate may be a rigid substrate, such as a glass substrate; or, the substrate may be a flexible substrate, such as a substrate formed of polyimide. When the substrate is flexible, the substrate may be formed from multiple sub-substrates of the same material (such as polyimide).

[0037] In some embodiments, the thin-film transistor layer includes a plurality of thin-film transistors, each thin-film transistor including a semiconductor layer, a first gate insulating layer, a first gate, a second gate insulating layer, a second gate, a first interlayer insulating layer, and a source and a drain disposed on the same layer.

[0038] The semiconductor layer is made of polycrystalline silicon or metal oxides (such as indium gallium zinc oxide), but is not limited to these. The semiconductor layer is divided into a channel region and source and drain regions formed on either side of the channel region. A first gate insulating layer covers the semiconductor layer. A first gate is formed on the first gate insulating layer and overlaps with the channel region along the thickness direction of the substrate 10. The first gate can be formed as multiple layers or a single layer comprising low-resistance materials such as Al, Ti, Mo, Cu, Ni, or alloys thereof, or materials with high corrosion resistance. A second gate insulating layer covers the first gate. The second gate is located on the second gate insulating layer and overlaps with the first gate along the thickness direction of the substrate 10. The second gate can be formed as multiple layers or a single layer comprising low-resistance materials such as Al, Ti, Mo, Cu, Ni, or alloys thereof, or materials with high corrosion resistance. A first interlayer insulating layer at least covers the second gate. In this structure, source contact holes and drain contact holes are provided on the first interlayer insulating layer, the first gate insulating layer, and the second gate insulating layer, respectively, exposing the source region and the drain region through the source contact holes and drain contact holes. Both the source and drain are formed on the first interlayer insulating layer. The source is connected to the source region through the source contact hole, and the drain is connected to the drain region through the drain contact hole. The source and drain can be multiple layers or a single layer formed of low-resistance materials such as Al, Ti, Mo, Cu, Ni, or their alloys, or materials with high corrosion resistance. For example, the source and drain can be a triple layer of Ti / Cu / Ti, Ti / Ag / Ti, Ti / Al / Ti, or Mo / Al / Mo, or other single-layer or multi-layer structures.

[0039] In some embodiments, the thin-film transistor layer further includes at least one planarization layer located on the side of the first interlayer insulating layer away from the substrate, the at least one planarization layer covering the source and drain.

[0040] In one specific embodiment, when the molar ratio of silicon to nitrogen in the first inorganic material is greater than 1 and less than or equal to 1.3, the first sublayer 311 has a low extinction coefficient for visible light, while also having higher fracture performance, better weather resistance, and a high refractive index. Therefore, it helps to improve the overall performance of the display panel 100.

[0041] In other specific embodiments, when the molar ratio of silicon to nitrogen in the first inorganic material is greater than 2, the first sublayer 311 has a lower extinction coefficient in the visible light band.

[0042] In this embodiment of the application, the molar ratio of silicon to nitrogen can be obtained by testing with an elemental analysis device.

[0043] In one specific embodiment, when the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is less than or equal to 30%, the first sublayer 311 has a low extinction coefficient for visible light, while also having higher fracture performance, better weather resistance, and a high refractive index. Therefore, it helps to improve the luminous efficiency of the display panel 100, while also giving the display panel 100 impact resistance and a longer service life.

[0044] In some specific embodiments, the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 2 and less than 2.8, while the first sublayer 311 has a low extinction coefficient for visible light, while also having higher fracture performance, better weather resistance, and a high refractive index. Therefore, it helps to improve the overall performance of the display panel 100.

[0045] In this embodiment, the first sublayer 311 can be prepared by plasma-enhanced chemical vapor deposition (PECVD) and / or atomic layer deposition (ALD). In the PECVD process, the substrate temperature is 70℃~90℃, the radio frequency power is 8000W~15000W, and the chamber pressure is 0.5 Torr~5 Torr. The raw material gases include SiH4, NH3, N2, and H2, with a flow rate ratio of 1:(0.6~2.2):(5~15):(5~20).

[0046] Furthermore, when the ratio of the number of hydrogen atoms in the silicon-hydrogen bond of the first inorganic material to the total number of atoms of the first inorganic material is less than or equal to 30%, the flow rate ratio of the four is 1:(1~2.2):(5~15):(5~20), wherein the flow rate of SiH4 is 2000~6000 sccm.

[0047] It is understood that, within the scope of the parameters disclosed in this application, the first sublayer 311 with specific target parameters is obtained based on existing public information. It is also understood that the preparation method of the first sublayer 311 in this application is not limited to the above method, and can also be adjusted to the target ratio based on existing recorded schemes.

[0048] In some embodiments, the plurality of inorganic sublayers further include at least one second sublayer 312, which is located on the side of at least one first sublayer 311 near the light-emitting layer 20. The material of the second sublayer 312 includes a second inorganic material comprising silicon-hydrogen bonds and nitrogen-hydrogen bonds. The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is greater than 34% and less than 40%. The ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is greater than or equal to 10% and less than 15%. Furthermore, the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is different from the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material.

[0049] When the display panel 100 has both a first sub-layer 311 and a second sub-layer 312, it can achieve higher fracture resistance, better weather resistance, and a high refractive index while reducing the overall extinction coefficient of the display panel 100. Furthermore, under the aforementioned defined ratio, the first sub-layer 311 has better fracture resistance than the second sub-layer 312. Therefore, using the first sub-layer 311 as a functional layer near the outer edge of the display panel 100 can improve the impact resistance of the display panel 100.

[0050] It should be noted that, in this embodiment, the fracture resistance test is performed by placing the film layer on an organic flexible carrier and conducting a tensile test, and observing the tensile strain when cracks appear using an optical microscope, which is the fracture threshold; in this embodiment, the fracture threshold of the first sub-layer 311 is greater than the fracture threshold of the second sub-layer 312.

[0051] In some embodiments, the ratio of the number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material, and the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material, are greater than or equal to 2.5. Within this ratio range, the second sublayer 312 can achieve higher fracture performance, better weather resistance, and a high refractive index while reducing the overall extinction coefficient of the display panel 100. In some specific embodiments, the ratio of the number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material, and the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material, are less than 2.8.

[0052] Meanwhile, in this embodiment, within the aforementioned ratio range, the refractive index of the second sub-layer 312 is greater than or equal to the refractive index of the first sub-layer 311. This refractive index relationship helps the display panel 100 avoid total internal reflection due to an excessively large difference in refractive index with the environment when emitting light, thus improving the light emission efficiency of the display panel 100. Specifically, the refractive index of the first sub-layer 311 is greater than or equal to 1.85, and the refractive index of the second sub-layer 312 is greater than or equal to 1.90.

[0053] In this embodiment, the extinction coefficient of the second sub-layer 312 in the blue light band is greater than the extinction coefficient of the first sub-layer 311 in the blue light band. For example, the extinction coefficient of the first sub-layer 311 in the blue light band is less than or equal to 0.002, and the extinction coefficient of the second sub-layer 312 in the blue light band is less than or equal to 0.005. Specifically, the extinction coefficient of the first sub-layer 311 for 460nm light is less than or equal to 0.002, and the extinction coefficient of the second sub-layer 312 for 460nm light is less than or equal to 0.005.

[0054] It is understood that in the embodiments of this application, the blue light band refers to light in the range of 380 nm to 500 nm.

[0055] Correspondingly, in some embodiments, the thickness of the first sub-layer 311 is greater than the thickness of the second sub-layer 312. By designing a film layer with a large extinction coefficient to have a smaller thickness, the negative impact of the extinction coefficient on the overall display panel 100 can be reduced, thereby improving the overall luminous efficiency of the display panel 100. Specifically, the thickness of the first sub-layer 311 is greater than or equal to 0.2 micrometers (μm) and less than or equal to 0.4 μm, and the thickness of the second sub-layer 312 is greater than or equal to 0.1 μm and less than or equal to 0.3 μm.

[0056] It is understood that in the embodiments of this application, "thickness" refers to the thickness in the stacking direction of multiple inorganic sublayers.

[0057] In this embodiment, the second sublayer 312 can be fabricated by PECVD and / or ALD processes. In the PECVD process, the substrate temperature is 70℃~90℃, the RF power is 8000W~15000W, and the chamber pressure is 0.5Torr~5.0Torr. The raw material gases include SiH4, NH3, N2, and H2, with a flow rate ratio of 1:(0.6~2):(5~15):(5~20); wherein the flow rate of SiH4 is 2000 sccm~6000 sccm.

[0058] It is understood that, within the scope of the parameters disclosed in this application, the second sublayer 312 with specific target parameters is obtained based on existing public information. It is also understood that the preparation method of the second sublayer 312 in this application is not limited to the above method, and can also be adjusted to the target ratio based on existing recorded schemes.

[0059] In some embodiments, the plurality of inorganic sublayers include at least one first sub-inorganic layer 31 and at least one second sub-inorganic layer 32, wherein the at least one second sub-inorganic layer 32 is located on the side of the at least one first sub-inorganic layer 31 close to the light-emitting layer 20; the first sub-inorganic layer 31 includes at least one of a first sublayer 311 and a second sublayer 312.

[0060] The material of the second inorganic sublayer includes a third inorganic material, which includes silicon-hydrogen bonds and nitrogen-hydrogen bonds.

[0061] The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 20% and less than or equal to 34%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than or equal to 20%. Furthermore, the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is different from the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material. In this embodiment, when the material of the second sub-inorganic layer 32 is within the above-mentioned ratio range, its weather resistance is better, and when used as a functional layer close to the light-emitting layer 20, it can better protect the light-emitting layer 20.

[0062] Specifically, the third inorganic material satisfies at least one of conditions (a) and (b), or the third inorganic material satisfies at least one of conditions (c) and (d): (a) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 1.2 and less than 1.5 to the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material. (b) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 20% and less than or equal to 25%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 15% and less than or equal to 20%. (c) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 2.0 and less than 2.5 to the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material. (d) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 30% and less than or equal to 34%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than or equal to 15%.

[0063] When the above conditions are met, the weather resistance of the second sub-inorganic layer 32 is better than that of the first sub-layer 311 and the second sub-layer 312, so that it is located closer to the light-emitting layer 20, preventing water and oxygen from entering the light-emitting layer 20, which is more conducive to protecting the light-emitting layer 20 and extending the service life of the display panel 100.

[0064] In this embodiment, the extinction coefficient of the second sub-inorganic layer 32 in the blue light band is less than or equal to 0.0025, and the refractive index is greater than or equal to that of the first sub-layer 311, which can improve the light transmittance of the display panel 100.

[0065] In some preferred embodiments, the total thickness of at least one second sub-inorganic layer 32 is greater than the total thickness of at least one first sub-inorganic layer 31, thereby ensuring the water and oxygen barrier performance of the display panel 100.

[0066] In some preferred embodiments, the oxidation rate of the second sub-inorganic layer 32 is lower than that of the first sub-inorganic layer 31 in the same environment, which is more conducive to the protection of the inorganic layer. In some preferred embodiments, the fracture threshold of the second sub-inorganic layer 32 is less than that of the first sub-inorganic layer 31, and the first sub-inorganic layer 31 is placed in the functional layer of the display panel 100 away from the light-emitting layer 20 to enhance its resistance to external impacts.

[0067] In some embodiments, the first inorganic material includes at least one of silicon nitride containing silicon-hydrogen bonds and nitrogen-hydrogen bonds, and silicon oxynitride containing silicon-hydrogen bonds and nitrogen-hydrogen bonds.

[0068] In some embodiments, the second inorganic material includes at least one of silicon nitride containing silicon-hydrogen bonds and nitrogen-hydrogen bonds, and silicon oxynitride containing silicon-hydrogen bonds and nitrogen-hydrogen bonds.

[0069] In some embodiments, the third inorganic material includes at least one of silicon nitride containing silicon-hydrogen bonds and nitrogen-hydrogen bonds, and silicon oxynitride containing silicon-hydrogen bonds and nitrogen-hydrogen bonds.

[0070] In this embodiment, the proportion of hydrogen atoms in the silicon-hydrogen bond to the total atoms of the corresponding inorganic layer material was obtained by testing in the following manner: 1) Test the Fourier transform infrared spectrum of the film to obtain the absorption peak of the silicon-hydrogen bond in the spectrum (the corresponding absorption peak is located at 2000–2300 cm⁻¹). - ¹) Full width at half maximum (FWHM) Si-H and the height h of the absorption peakSi-H ; 2) According to the formula at.%H (Si–H) =(FWHM) Si-H ×h Si-H The ratio of hydrogen atoms in the silicon-hydrogen bond to the total number of atoms in the corresponding inorganic layer material is calculated as (38080 / 1.4)×0.3719 / d)-0.4%, where d is the thickness of the corresponding inorganic layer.

[0071] In this embodiment, the proportion of hydrogen atoms in the nitrogen-hydrogen bond to the total atoms of the corresponding inorganic layer material was obtained by testing in the following manner: 1) Test the Fourier transform infrared spectrum of the film to obtain the full width at half maximum (FWHM) of the silicon-hydrogen bond absorption peak in the spectrum. N-H (The corresponding absorption peak is located at 3100–3500 cm⁻¹) - ¹) and the height h of the absorption peak N-H ; 2) According to the formula at.%H (N–H) =(FWHM) N-H ×h N-H The percentage of hydrogen atoms in the nitrogen-hydrogen bond relative to the total number of atoms in the corresponding inorganic layer material is calculated as (38080×0.3485) / d) + 7.37%, where d is the thickness of the corresponding inorganic layer.

[0072] In this embodiment, the second sub-inorganic layer 32 can be fabricated by PECVD and / or ALD processes. In the PECVD process, the substrate temperature is 70℃~90℃, the RF power is 8000~15000 W, and the cavity pressure is 0.5 Torr~5 Torr. The sputtering gas includes SiH4, NH3, N2, and H2, with a flow rate ratio of 1:(0.6~2.2):(5~15):(5~20); wherein the flow rate of SiH4 is 2000~6000 sccm.

[0073] Furthermore, when the second sublayer satisfies condition (a) or (b), and the ratio of the total number of hydrogen atoms in the silicon-hydrogen bond to the total number of atoms in the third inorganic material is less than the ratio of the number of hydrogen atoms in the silicon-hydrogen bond of the first inorganic material to the total number of atoms in the first inorganic material, the flow ratio of the four is 1:(0.80). 2.2):(5 15): (5~15), where the flow rate of SiH4 is 2000~6000 sccm.

[0074] Furthermore, when the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the third inorganic material to the total number of atoms in the second inorganic sublayer 32 is greater than the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first sublayer 311 when the second sublayer satisfies condition (c) or (d), the flow rate ratio of the four is 1 : (0.6~2) : (5 ~ 15) : (5~15), where the flow rate of SiH4 is 2000~6000 sccm.

[0075] It is understood that, within the scope of the parameters disclosed in this application, the second sub-inorganic layer 32 with specific target parameters is obtained based on existing public information. It is also understood that the preparation method of the second sub-inorganic layer 32 in this application is not limited to the above method, and can also be adjusted to the target ratio based on existing recorded schemes.

[0076] In some embodiments, the display panel 100 further includes a first organic functional layer 40, and at least one second sub-inorganic layer 32 is located on the side of the first organic functional layer 40 away from the light-emitting layer 20; the plurality of inorganic sub-layers further include at least one third sub-inorganic layer 33, which is located between the first organic functional layer 40 and the light-emitting layer 20. The extinction coefficient of the third sub-inorganic layer 33 is less than that of the first sub-inorganic layer 31. In this embodiment, the first organic functional layer 40 and the third sub-inorganic layer 33, as functional layers closer to the light-emitting layer 20, serve to block water and oxygen; simultaneously, as functional layers closer to the light-emitting layer 20, their extinction coefficient is less than that of functional layers farther from the light-emitting layer 20, which further helps to improve luminous efficiency. Furthermore, the first organic functional layer 40 can also improve the toughness of the display panel 100, fill defects in the sub-inorganic layers, and also play a flattening role.

[0077] In some specific embodiments, the plurality of inorganic sub-layers include at least two third sub-inorganic layers 33, and the extinction coefficient of any third sub-inorganic layer 33 in the visible light band is less than 0.001. In some specific embodiments, among the at least two stacked third sub-inorganic layers 33, the third sub-inorganic layer 33 with the largest thickness has the smallest extinction coefficient, thereby further improving light transmittance. Specifically, the extinction coefficient of the third inorganic sub-layer with the smallest thickness is less than 0.0001.

[0078] In one specific embodiment, at least two third sub-inorganic layers 33 include a third sub-layer 331, a fourth sub-layer 332, and a fifth sub-layer 333; wherein the fourth sub-layer 332 is located between the third sub-layer 331 and the fifth sub-layer 333, the third sub-layer 331 is located between the light-emitting layer 20 and the fourth sub-layer 332, and the thickness of the fourth sub-layer 332 is greater than the thickness of the third sub-layer 331 and greater than the thickness of the fifth sub-layer 333. This further optimizes the optical effect and improves light transmittance.

[0079] In some embodiments, the refractive indices of at least two third sub-inorganic layers 33 decrease sequentially in the direction away from the light-emitting layer 20, and the refractive index of the third sub-inorganic layer 33 with the lowest refractive index is also lower than the refractive index of the first organic functional layer 40. This improves light extraction efficiency and reduces color shift in the display panel 100. In a specific embodiment, the refractive index of the third sub-inorganic layer 33 with the lowest refractive index is less than 1.7.

[0080] In some embodiments, any inorganic sublayer has an extinction coefficient, the thickness of the inorganic sublayer is d μm, and under any light wave emitted by the light-emitting layer 20, the sum of the products of the film thickness d of all inorganic sublayers and their corresponding extinction coefficients is less than 0.003 (see Formula 1). Thus, the negative impact of the extinction coefficient on the display panel 100 is controlled overall, improving the luminous efficiency of the display panel 100. Specifically, the extinction coefficient of any inorganic sublayer is greater than or equal to 0 and less than or equal to 0.4. In some embodiments, the plurality of inorganic sublayers consists of a first sub-inorganic layer 31, a second sub-inorganic layer 32, and a third sub-inorganic layer 33.

[0081] S= <0.003; Formula 1 Where, d i The thickness of the inorganic sublayer (μm), k i Let be the extinction coefficient of the corresponding sub-inorganic layer, and i be the layer index of the sub-inorganic layer; where the maximum value of n is the total number of sub-inorganic layers, and k1~k n The extinction coefficient is the extinction coefficient at the same wavelength.

[0082] In some preferred embodiments, the refractive index of any inorganic sublayer is greater than or equal to 1.4 and less than or equal to 2.3.

[0083] In some embodiments, the display panel 100 further includes a second organic functional layer 50, which is located on the side of the first sub-layer 311 away from the second sub-layer 312. The second organic functional layer 50 protects the first sub-layer 311, improves the toughness of the display panel 100, fills in defects in the first sub-layer 311, and also plays a flattening role.

[0084] In some embodiments, the extinction coefficient of the first organic functional layer 40 and / or the second organic functional layer 50 in the visible light band is less than 0.001. This controls the overall impact of the extinction coefficient on the display panel 100, thereby improving the luminous efficiency of the display panel 100.

[0085] In this application, the visible light band is 380 nm. 760 nm.

[0086] It is understood that the third sublayer 331, the fourth sublayer 332, the fifth sublayer 333, the first organic functional layer 40, and the second organic functional layer 50 can be prepared using existing materials or methods, which will not be elaborated on in detail. For example, the first organic functional layer 40 is prepared using inkjet printing, and the second organic functional layer 50 is prepared using photolithography.

[0087] In some embodiments, the materials of the third sublayer 331, the fourth sublayer 332, and the fifth sublayer 333 each contain at least one of silicon nitride and silicon oxynitride.

[0088] It is understood that the extinction coefficient and refractive index of this application are obtained by ellipsometer testing, and the film thickness is obtained by ellipsometer or transmission electron microscopy testing.

[0089] See Figure 1 In some embodiments, the display panel 100 includes a touch structure 70, which includes at least a first sub-inorganic layer 31. In one specific embodiment, at least one first sub-inorganic layer 31 includes a first sub-layer 311.

[0090] In some embodiments, the touch structure 70 includes a second sub-layer 312 located on the light-emitting side of the light-emitting layer 20, a first touch metal layer 71 located on the side of the second sub-layer 312 away from the light-emitting layer, a first sub-layer 311 covering the second sub-layer 312 and the first touch metal layer, and a second touch metal layer 72 located on the side of the first sub-layer 311 away from the light-emitting layer.

[0091] In some embodiments, the touch structure 70 further includes a second organic functional layer 50 covering the second touch metal layer 72 and the first sublayer 311.

[0092] See Figure 2 and Figure 3 In some embodiments, the display panel 100 includes an encapsulation structure 60 located between the touch structure 70 and the light-emitting layer 20; the encapsulation structure 60 includes at least a second sub-inorganic layer 32, a first organic functional layer 40 and at least a third sub-inorganic layer 33.

[0093] In some embodiments, the third sub-inorganic layer 33 includes a third sub-layer 331, a fourth sub-layer 332, and a fifth sub-layer 333 arranged sequentially along the direction away from the light-emitting layer.

[0094] This application provides five types of display panels 100 through embodiments 1 to 5, wherein: like Figure 3As shown, the display panel 100 provided in Embodiment 1 includes: a substrate 10, a light-emitting layer 20 disposed on the substrate 10, an encapsulation structure 60 located on the side of the light-emitting layer 20 away from the substrate 10, and a touch structure 70 located on the side of the encapsulation structure 60 away from the light-emitting layer 20.

[0095] The encapsulation structure 60 includes a third sub-layer 331, a fourth sub-layer 332, a fifth sub-layer 333, a first organic functional layer 40, and a second sub-inorganic layer 32, which are stacked sequentially along the direction away from the light-emitting layer 20.

[0096] The third sublayer 331 has a refractive index of 1.89, an extinction coefficient of 0.0003 for light with a wavelength of 460 nm, an extinction coefficient of less than 0.0001 for light with a wavelength of 520 nm, an extinction coefficient of less than 0.0001 for light with a wavelength of 633 nm, and a film thickness of 0.14 μm.

[0097] The fourth sublayer 332 has a refractive index of 1.81, a film thickness of 1.05 μm, an extinction coefficient of 0.0002 for light with a wavelength of 460 nm, an extinction coefficient of less than 0.0001 for light with a wavelength of 520 nm, and an extinction coefficient of less than 0.0001 for light with a wavelength of 633 nm. The fifth sublayer 333 has a refractive index of 1.7, a film thickness of 0.09 μm, an extinction coefficient of 0.0001 for light with a wavelength of 460 nm, an extinction coefficient of less than 0.0001 for light with a wavelength of 520 nm, and an extinction coefficient of less than 0.0001 for light with a wavelength of 633 nm.

[0098] The first organic functional layer 40 has a thickness of 10 μm, an extinction coefficient of less than 0.001 for light with a wavelength of 460 nm, an extinction coefficient of less than 0.0001 for light with a wavelength of 520 nm, an extinction coefficient of less than 0.0001 for light with a wavelength of 633 nm, and a refractive index of 1.51.

[0099] The material of the second inorganic layer 32 is silicon nitride (the third inorganic material); the second inorganic layer 32 has a thickness of 0.65 μm, an extinction coefficient of 0.0021 for light with a wavelength of 460 nm, an extinction coefficient of less than 0.0001 for light with a wavelength of 520 nm, and an extinction coefficient of less than 0.0001 for light with a wavelength of 633 nm. The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is 34%, the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is 14%, and the refractive index of the second inorganic layer 32 is 1.91.

[0100] Touch structure 70 (see) Figure 1As shown, it includes a second sublayer 312, a first sublayer 311, and a second organic functional layer 50 stacked along the direction away from the light-emitting layer, wherein: The material of the second sublayer 312 is silicon nitride (the second inorganic material). The thickness of the second sublayer 312 is 0.2 μm. The extinction coefficient for light with a wavelength of 460 nm is 0.0023, the extinction coefficient for light with a wavelength of 520 nm is less than 0.0001, and the extinction coefficient for light with a wavelength of 633 nm is less than 0.0001. The ratio of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is 35%, the ratio of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is 14%, and the refractive index is 1.91.

[0101] The first sublayer 311 is made of silicon nitride (the first inorganic material). The thickness of the first sublayer 311 is 0.3 μm. Its extinction coefficient for light with a wavelength of 460 nm is 0.001, its extinction coefficient for light with a wavelength of 520 nm is less than 0.0001, and its extinction coefficient for light with a wavelength of 633 nm is less than 0.0001. The ratio of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is 28%, and the ratio of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is 14%. In the first inorganic material, the transmission electron microscopy coupled with energy dispersive X-ray spectroscopy (TEM EDS) test results show that the molar content of Si element is 51%, the molar content of N element is 46%, the molar ratio of the two is 1.11, and the refractive index of the first sublayer 311 is 1.90.

[0102] The second organic functional layer 50 has a thickness of 3.5 μm, an extinction coefficient of less than 0.001, and a refractive index of 1.52.

[0103] Among them, the sum of the products of each inorganic sub-layer of the display panel 100 and its corresponding film thickness (μm) (first sub-layer 311, second sub-layer 312, third sub-layer 331, fourth sub-layer 332, fifth sub-layer 333 and second sub-inorganic layer 32) is equal to 0.0024.

[0104] Example 2 The display panel structure of this application refers to Embodiment 1, except that the material of the second sub-inorganic layer is silicon nitride (the third inorganic material); the extinction coefficient for light with a wavelength of 460 nm is 0.0001, the extinction coefficient for light with a wavelength of 520 nm is less than 0.0001, and the extinction coefficient for light with a wavelength of 633 nm is less than 0.0001. The ratio of the number of hydrogen atoms in the silicon-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is 22%, and the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is 18%. The refractive index of the second sub-inorganic layer 32 is 1.84.

[0105] Among them, the sum of the products of each inorganic sub-layer of the display panel and its corresponding film thickness (first sub-layer, second sub-layer, third sub-layer, fourth sub-layer, fifth sub-layer and second sub-inorganic layer) is equal to 0.0011.

[0106] Example 3 The display panel structure of this application refers to Embodiment 1, except that the refractive index of the third sublayer is 1.87, the extinction coefficient for light with a wavelength of 460 nm is 0.0002, the extinction coefficient for light with a wavelength of 520 nm is 0, the extinction coefficient for light with a wavelength of 633 nm is 0, and the film thickness is 150 nm.

[0107] The fourth sublayer has a refractive index of 1.7 and a film thickness of 0.95 μm. Its extinction coefficient for light with a wavelength of 460 nm is less than 0.0001, for light with a wavelength of 520 nm is less than 0.0001, and for light with a wavelength of 633 nm is less than 0.0001.

[0108] The fifth sublayer has a refractive index of 1.59 and a film thickness of 0.09 μm. Its extinction coefficient for light with a wavelength of 460 nm is less than 0.0001, for light with a wavelength of 520 nm is less than 0.0001, and for light with a wavelength of 633 nm is less than 0.0001.

[0109] Example 4 The display panel structure of this application refers to Embodiment 1, except that there is no second sub-layer, and the original second sub-layer is replaced with the same material as the first sub-layer. That is, the touch structure of this embodiment has two identical first sub-layers.

[0110] The first sublayer is made of silicon nitride (the first inorganic material). The thickness of the first sublayer is 0.3 μm. The extinction coefficient for light with a wavelength of 460 nm is less than 0.0001, the extinction coefficient for light with a wavelength of 520 nm is less than 0.0001, and the extinction coefficient for light with a wavelength of 633 nm is less than 0.0001. The ratio of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is 40%, and the ratio of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is 14%. According to TEM EDS results, the Si element content in the first inorganic material is 65%, the N element content is 32%, and the molar ratio of the two is 2.03:1. The refractive index of the first sublayer 311 is 1.85.

[0111] Example 5 The display panel structure of this application refers to Embodiment 1. The process of the second sub-inorganic layer in Embodiment 5 is different from that of the second sub-inorganic layer in Embodiment 1. The ratio of the number of hydrogen atoms in the silicon-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is 34%, and the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bonds of the third inorganic material to the total number of atoms in the third inorganic material is 14%. The extinction coefficient of the second sub-inorganic layer for light with a wavelength of 520 nm is less than 0.0001, and the extinction coefficient for light with a wavelength of 633 nm is less than 0.0001. The refractive index of the second sub-inorganic layer 32 is 1.88.

[0112] This application also provides a comparative example 1 display panel. The structure of the comparative example display panel is the same as that of embodiment 1, except that the display panel structure of this application is the same as that of embodiment 1, except that there is no second sub-layer. The original second sub-layer is replaced with the same material as the first sub-layer. That is, the touch structure of this comparative example 1 has two identical first sub-layers. Wherein: The extinction coefficient of the first sublayer for light with a wavelength of 460 nm is 0.004, the extinction coefficient for light with a wavelength of 520 nm is (0.0005), and the extinction coefficient for light with a wavelength of 633 nm is less than 0.0001. The ratio of hydrogen atoms in the silicon-hydrogen bonds of the first sublayer to the total number of atoms in the first sublayer is 46%, and the ratio of hydrogen atoms in the nitrogen-hydrogen bonds of the first sublayer to the total number of atoms in the first sublayer is 14%. According to TEM EDS results, the molar content of Si in the first sublayer is 56%, the molar content of N is 41%, and the molar ratio of the two is 1.37. The refractive index of the first sublayer 311 is 1.91.

[0113] Among them, the sum of the products of each inorganic sub-layer of the display panel and its corresponding film thickness (first sub-layer, second sub-layer, third sub-layer, fourth sub-layer, fifth sub-layer and second sub-inorganic layer) is equal to 0.0036.

[0114] The embodiments of this application also provide a method for detecting the reliability of the above-mentioned display panel: 1) Prepare individual inorganic sublayer samples on an organic flexible support and test their fracture resistance. The test method is as follows: Tensile tests were performed on an organic flexible carrier, and the tensile strain (fracture threshold) at the appearance of cracks was observed using an optical microscope. The test results are shown in Table 1.

[0115] Table 1 Example 1 Example 2 Example 4 Example 5 Comparative Example 1 Second Sub-inorganic Layer 0.48% 0.38% / 0.47% 0.48% Second sub-layer 0.66% / 0.58% / 0.7% First sub-layer 0.69% / 0.58% / 0.7% As shown in Table 1, compared to the display panel of Comparative Example 1, the display panels of Examples 1 to 5, when the ratio of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 25% and less than or equal to 40%, and the ratio of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 10% and less than 15%, can reduce the extinction coefficient while ensuring a fracture resistance greater than 0.55%. Furthermore, as shown in Examples 1 and 4, when the molar ratio of silicon to nitrogen in the first inorganic material is greater than 1 and less than or equal to 1.3, and / or the ratio of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is less than or equal to 30%, it can reduce the extinction coefficient while ensuring a fracture resistance greater than 0.65%, and a refractive index greater than 1.85.

[0116] As can be seen from the fracture resistance data of the second sub-layer and the second sub-inorganic layer in Example 1, when the ratio of the number of hydrogen atoms in the silicon-hydrogen bond to the total number of atoms in the corresponding sub-inorganic layer material is greater than 34%, its fracture resistance is greatly improved.

[0117] As can be seen from Examples 1 and 2, when the ratio of the number of hydrogen atoms in the silicon-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 30% and less than or equal to 34%, the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than 15%, and / or the ratio of the ratio of the number of hydrogen atoms in the silicon-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material to the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than 2.0 and less than 2.5, the fracture resistance is improved. When the ratio of hydrogen atoms in the silicon-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 20% and less than or equal to 25%, the ratio of hydrogen atoms in the nitrogen-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than 15% and less than or equal to 20%, and / or the ratio of the ratio of hydrogen atoms in the silicon-hydrogen bond of the third inorganic material to the ratio of hydrogen atoms in the nitrogen-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than 1.2 and less than 1.5, the extinction coefficient further decreases.

[0118] 2) The antioxidant test method is as follows: The inorganic sublayers to be tested were exposed to air and stored in a dual 85°C / 85% RH environment. The oxidation degree of the film was then measured using TEM. The oxidation rates of each inorganic component in the examples are shown below: Example 1 Second Sub-inorganic Layer ≈ Example 5 Second Sub-inorganic Layer > Example 2 Second Sub-inorganic Layer > Example 1 Second Sub-layer > Example 1 First Sub-layer > Comparative Example 1 First Sub-layer ≈ Example 4 First Sub-layer.

[0119] Compared to the display panel of Comparative Example 1, the display panels of Examples 1 to 5, when the ratio of the number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms of the first inorganic material is greater than or equal to 25% and less than or equal to 40%, and the ratio of the number of hydrogen atoms in the first nitrogen-hydrogen bonds to the total number of atoms of the first inorganic material is greater than or equal to 10% and less than 15%, can reduce the extinction coefficient while ensuring its water and oxygen barrier performance.

[0120] Furthermore, as can be seen from Examples 1 and 2, when the ratio of the number of hydrogen atoms in the silicon-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 30% and less than or equal to 34%, and the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than or equal to 15%, the water and oxygen barrier performance of the second sub-inorganic layer 32 is improved.

[0121] Furthermore, experimental data from Examples 1 and 5 show that, under the condition of ensuring the ratio of the number of hydrogen atoms in the third silicon-hydrogen bond to the total number of atoms in the third inorganic material, and the ratio of the number of hydrogen atoms in the nitrogen-hydrogen bond of the third inorganic material to the total number of atoms in the third inorganic material, the process has little impact on the fracture threshold, extinction coefficient, refractive index parameter, and oxidation resistance. Therefore, the third inorganic material in the embodiments of this application has a large process window and good process adaptability.

[0122] 3) Test method for luminous efficiency The current efficiency of the display panels in Examples 1, 2, and 1 when displaying 255 grayscale levels of white light was tested. Light intensity was measured using a CA410 meter, and current was measured using an ammeter. The results show: As the sum of the products of each inorganic sublayer and its corresponding film thickness decreases, the luminous efficiency increases sequentially. Specifically, the luminous efficiency of Example 1 is 100%, the luminous efficiency of Example 2 relative to Example 1 is 101.4%, and the luminous efficiency of Comparative Example 1 relative to Example 1 is 98.3%. It can be seen that when the sum of the products of each inorganic sublayer and its corresponding film thickness is less than 0.003, it helps to improve the luminous efficiency of the display panel.

[0123] This application embodiment also provides a display device, including the above-described display panel 100.

[0124] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0125] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0126] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0127] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A display panel, characterized in that, include: substrate; A light-emitting layer is located on one side of the substrate; as well as, An inorganic layer is located on the side of the light-emitting layer away from the substrate, and includes multiple inorganic sublayers; The plurality of inorganic sublayers include at least one first sublayer, the material of the first sublayer being a first inorganic material, the first inorganic material including silicon-hydrogen bonds and nitrogen-hydrogen bonds, wherein the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 25% and less than or equal to 40%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 10% and less than 15%.

2. The display panel according to claim 1, characterized in that, In the first inorganic material, the molar ratio of silicon to nitrogen is greater than 1 and less than or equal to 1.3; and / or, The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material is less than or equal to 30%; and / or, The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the first inorganic material to the total number of atoms in the first inorganic material is greater than or equal to 2, compared with the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the first inorganic material to the total number of atoms in the first inorganic material.

3. The display panel according to claim 1, characterized in that, The plurality of inorganic sublayers further include at least one second sublayer, wherein the at least one second sublayer is located on the side of the at least one first sublayer that is close to the light-emitting layer; The material of the second sublayer includes a second inorganic material, which includes silicon-hydrogen bonds and nitrogen-hydrogen bonds; the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is greater than 34% and less than 40%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is greater than or equal to 10% and less than 15%; and the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the second inorganic material to the total number of atoms in the second inorganic material is different from the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds of the first inorganic material to the total number of atoms in the first inorganic material.

4. The display panel according to claim 3, characterized in that, The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the second inorganic material to the total number of atoms in the second inorganic material is greater than or equal to 2.5, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the second inorganic material to the total number of atoms in the second inorganic material.

5. The display panel according to claim 3, characterized in that, The extinction coefficient of the second sublayer in the blue light band is greater than the extinction coefficient of the first sublayer in the same blue light band; and / or, The refractive index of the second sublayer is greater than that of the first sublayer.

6. The display panel according to claim 5, characterized in that, The extinction coefficient of the first sublayer in the blue light band is less than or equal to 0.002, and the extinction coefficient of the second sublayer in the blue light band is less than or equal to 0.005; and / or, The refractive index of the first sublayer is greater than or equal to 1.85, and the refractive index of the second sublayer is greater than or equal to 1.

90.

7. The display panel according to claim 3, characterized in that, The thickness of the first sublayer is greater than the thickness of the second sublayer.

8. The display panel according to claim 7, characterized in that, The thickness of the first sublayer is greater than or equal to 0.2 micrometers and less than or equal to 0.4 micrometers, and the thickness of the second sublayer is greater than or equal to 0.1 micrometers and less than or equal to 0.3 micrometers.

9. The display panel according to any one of claims 1 to 8, characterized in that, The display panel includes a touch structure, and the touch structure includes the at least one first sub-layer.

10. The display panel according to claim 3, characterized in that, The plurality of inorganic sublayers include at least one first sub-inorganic layer and at least one second sub-inorganic layer, wherein the at least one second sub-inorganic layer is located on the side of the at least one first sub-inorganic layer that is close to the light-emitting layer; the first sub-inorganic layer includes at least one of the first sublayer and the second sublayer. The material of the second inorganic sublayer includes a third inorganic material, which includes silicon-hydrogen bonds and nitrogen-hydrogen bonds. The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 20% and less than or equal to 34%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than or equal to 20%; and the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is different from the ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the first inorganic material to the total number of atoms in the first inorganic material.

11. The display panel according to claim 10, characterized in that, The third inorganic material satisfies at least one of conditions (a) and (b), or the third inorganic material satisfies at least one of conditions (c) and (d): (a) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 1.2 and less than 1.5 to the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material; (b) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 20% and less than or equal to 25%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 15% and less than or equal to 20%. (c) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than 2.0 and less than 2.5 to the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material. (d) The ratio of the total number of hydrogen atoms in the silicon-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 30% and less than or equal to 34%, and the ratio of the total number of hydrogen atoms in the nitrogen-hydrogen bonds in the third inorganic material to the total number of atoms in the third inorganic material is greater than or equal to 10% and less than or equal to 15%.

12. The display panel according to claim 10, characterized in that, The extinction coefficient of the second inorganic sublayer in the blue light band is less than or equal to 0.0025; and / or, The total thickness of the at least one second sub-inorganic layer is greater than the total thickness of the at least one first sub-inorganic layer; and / or, The fracture threshold of the second sub-inorganic layer is less than that of the first sub-inorganic layer.

13. The display panel according to claim 10, characterized in that, The first inorganic material includes at least one of silicon nitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds, and silicon oxynitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds; and / or, The second inorganic material includes at least one of silicon nitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds, and silicon oxynitride containing the silicon-hydrogen bonds and the nitrogen-hydrogen bonds; and / or, The third inorganic material includes at least one of silicon nitride containing the silicon-hydrogen bond and the nitrogen-hydrogen bond, and silicon oxynitride containing the silicon-hydrogen bond and the nitrogen-hydrogen bond.

14. The display panel according to claim 10, characterized in that, The display panel further includes a first organic functional layer, and the at least one second sub-inorganic layer is located on the side of the first organic functional layer away from the light-emitting layer; The plurality of inorganic sub-layers further include at least one third sub-inorganic layer, wherein the at least one third sub-inorganic layer is located between the first organic functional layer and the light-emitting layer; The extinction coefficient of the third sub-inorganic layer is less than that of the first sub-inorganic layer.

15. The display panel according to claim 14, characterized in that, The plurality of inorganic sub-layers include at least two stacked third sub-inorganic layers, and the extinction coefficient of any third sub-inorganic layer in the visible light band is less than 0.

001.

16. The display panel according to claim 15, characterized in that, The plurality of inorganic sub-layers include at least two stacked third sub-inorganic layers, wherein the third sub-inorganic layer with the largest thickness has the smallest extinction coefficient among the at least two stacked third sub-inorganic layers.

17. The display panel according to any one of claims 14 to 16, characterized in that, The display panel includes a touch structure and an encapsulation structure, wherein the encapsulation structure is located between the touch structure and the light-emitting layer; The touch structure includes at least one first sub-inorganic layer; the encapsulation structure includes at least one second sub-inorganic layer, the first organic functional layer, and at least one third sub-inorganic layer.

18. The display panel according to claim 1, characterized in that, Each of the inorganic sublayers has an extinction coefficient and a thickness, and under any light wave emitted by the light-emitting layer, the sum of the products of the film thickness of all the inorganic sublayers in the inorganic layer and the corresponding extinction coefficient is less than 0.

003.

19. The display panel according to claim 18, characterized in that, The refractive index of any of the inorganic sublayers is greater than or equal to 1.4 and less than or equal to 2.3; and / or, The extinction coefficient of any of the inorganic sublayers is greater than or equal to 0 and less than or equal to 0.

4.

20. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 19.

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