Perovskite photovoltaic module and method of making the same
Patent Information
- Application Number
- CN202611283895.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-24
- Publication Date
- 2026-09-22
AI Technical Summary
[0003]本发明实施例提供一种钙钛矿光伏组件及其制备方法，旨在改善沟槽重叠区域双重激光辐照引发热累积，造成激光过刻击穿 透明导电层，导致漏电、串联断路、效率衰减的问题
第一，能够避免相邻沟槽发生重叠：相比现有互连区无物理限位结构，以至于激光划线产生微米级对位偏移时，相邻沟槽极易局部重合；本发明通过在子电池连接的互连区域设置台阶式隔离缓冲台阶微结构，形成物理限位边界，即使激光划线存在常规微米级偏移，相邻的沟槽无法发生重叠，从而消除双重激光在同一区域的热量叠加，从而能够改善激光划线过程中因加工偏移导致沟槽重叠产生的热损伤问题，可降低子电池互连的串阻损耗与漏电概率，提升钙钛矿光伏组件的输出稳定性与光电转换效率。
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Abstract
Description
Technical Field
[0001] This invention belongs to the field of photovoltaic cell technology, specifically relating to a perovskite photovoltaic module and its preparation method. Background Technology
[0002] Large-scale perovskite photovoltaic modules are produced using a single-cell series structure, relying on multiple steps of laser scribing to connect sub-cells in series. However, these perovskite photovoltaic modules suffer from the following drawbacks: Laser scribing is completed in multiple processes. There is an accumulated alignment deviation in the visual positioning of each process. The grooves formed by laser scribing in different processes are very likely to overlap locally or completely. The overlapping area of the grooves will be subjected to two laser thermal irradiations. The thermal energy is concentrated at the thin film interface. There is a lack of structural layers that can disperse or absorb excess heat. The superimposed heat cannot be effectively diffused to the surrounding area, but instead directly penetrates the perovskite film layer in the vertical direction and impacts the bottom transparent conductive layer TCO. If the laser scribing is too strong, the bottom transparent conductive layer (TCO) will be broken down, and the conductive channel between the sub-cells will be broken, resulting in a significant increase in series resistance (Rs). At the same time, a local leakage path will be formed at the damaged part of the transparent conductive layer (TCO), the parallel resistance (Rsh) will decrease significantly, and the leakage current will increase. The combined effect of leakage current and high series resistance leads to a simultaneous decrease in the component fill factor (FF), short-circuit current density (Jsc), and open-circuit voltage (Voc), resulting in large-area dark bars in electroluminescence (EL) imaging and severely impairing mass production yield. Summary of the Invention
[0003] This invention provides a perovskite photovoltaic module and its preparation method, aiming to improve the problem of heat accumulation caused by double laser irradiation in the trench overlap area, which leads to laser over-etching and breakdown of the transparent conductive layer, resulting in leakage, series circuit breakage, and efficiency degradation.
[0004] To achieve the above objectives, the technical solution adopted by the present invention is: to provide a method for preparing a perovskite photovoltaic module, comprising: Deposit a bottom transparent conductive layer on a glass substrate; An isolation buffer step microstructure that protrudes above the underlying transparent conductive layer is fabricated in the interconnect region of the sub-cell; The isolation buffer step microstructure is located in the area and on both sides of which the groove structure is laser-etched in stages.
[0005] In conjunction with the first aspect, in one feasible manner, a trench structure is laser-etched stepwise in the region containing the isolation buffer step microstructure and on both sides thereof, including: Laser etching of a first trench structure on the first outer side of the isolation buffer step microstructure; The hole transport layer, perovskite light absorption layer, and electron transport layer are sequentially coated across the entire area. The second trench structure is laser-etched within the area where the isolation buffer step microstructure is located. Vaporized metal back electrode; The isolation buffer step microstructure is laser-etched with a third trench structure on the second outer side relative to the first outer side.
[0006] In conjunction with the first aspect, in one feasible manner, an isolation buffer microstep structure higher than the underlying transparent conductive layer is fabricated in the interconnect region of the sub-cell, comprising: The isolation buffer step microstructure is prepared in the interconnect region by photolithography or laser pre-etching. The transparent conductive buffer layers simultaneously prepared on both sides of the isolation buffer step microstructure are subjected to low-temperature annealing to eliminate film stress and form a low-stress transparent conductive buffer band. The groove structure is etched on the low-stress transparent conductive buffer strip and the isolation buffer step microstructure on both sides.
[0007] In conjunction with the first aspect, in one feasible manner, the isolation buffer step microstructure includes an intermediate limiting step, boundary limiting barriers formed on both sides of the intermediate limiting step, and low-stress transparent conductive buffer strips on both sides, wherein the height of the boundary limiting barriers is higher than that of the intermediate limiting step, and the height of the low-stress transparent conductive buffer strips is lower than that of the intermediate limiting step.
[0008] In conjunction with the first aspect, in one feasible manner, the width of the intermediate limiting step is preset to the minimum safe offset tolerance width of the groove structure.
[0009] In conjunction with the first aspect, in one feasible manner, the height of the intermediate limiting step is 0.2~0.5μm.
[0010] In conjunction with the first aspect, in one feasible manner, the overall width of the isolation buffer step microstructure is 20~40μm.
[0011] Secondly, embodiments of the present invention also provide a perovskite photovoltaic module, which is prepared by a perovskite photovoltaic module preparation method and includes, from bottom to top, a glass substrate, a bottom transparent conductive layer, an isolation buffer step microstructure, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a metal back electrode; the interconnection area of adjacent sub-cells is provided with an isolation buffer step microstructure; the height of the isolation buffer step microstructure in the vertical direction is higher than that of the bottom transparent conductive layer.
[0012] In conjunction with the second aspect, in one feasible manner, the isolation buffer step microstructure includes an intermediate limiting step, boundary limiting barriers formed on both sides of the intermediate limiting step, and low-stress transparent conductive buffer strips on both sides, wherein the height of the boundary limiting barriers is higher than that of the intermediate limiting step, and the height of the low-stress transparent conductive buffer strips is lower than that of the intermediate limiting step.
[0013] In conjunction with the second aspect, in one feasible manner, the height of the intermediate limiting step is 0.2~0.5μm.
[0014] The method for preparing perovskite photovoltaic modules provided by this invention has the following advantages compared with the prior art: First, it can avoid the overlap of adjacent trenches: Compared with the existing interconnect area without physical limiting structure, which makes it easy for adjacent trenches to locally overlap when laser scribing produces micron-level alignment misalignment; this invention sets a stepped isolation buffer step microstructure in the interconnect area of sub-cell connection to form a physical limiting boundary. Even if there is conventional micron-level misalignment in laser scribing, adjacent trenches cannot overlap, thereby eliminating the heat superposition of double lasers in the same area. This can improve the thermal damage problem caused by trench overlap due to processing misalignment during laser scribing, reduce the series resistance loss and leakage probability of sub-cell interconnection, and improve the output stability and photoelectric conversion efficiency of perovskite photovoltaic modules.
[0015] Secondly, it can prevent heat from concentrating and directly penetrating the perovskite light-absorbing layer and breaking down the underlying transparent conductive layer: The isolation buffer step microstructure thickens the breakdown thickness of the transparent conductive layer. When a slight deviation in the laser scribing causes local overlap, the thickened step can absorb the laser heat, disperse heat diffusion, and prevent the laser from over-scribing and breaking down the bottom transparent conductive layer. This significantly reduces module leakage defects, improves parallel resistance, ensures complete series conductive channels, reduces series resistance, and significantly improves the module's fill factor (FF), short-circuit current density (Jsc), and open-circuit voltage (Voc). This also significantly improves conversion efficiency, reduces the defect rate of dark stripes in electroluminescence (EL) imaging, and improves the module's yield.
[0016] The present invention can be used to improve the structure of photovoltaic modules without modifying the laser scribing equipment, resulting in low production line modification costs. It is compatible with existing whole-piece coating and evaporation mass production processes and has strong versatility.
[0017] It is understandable that the beneficial effects of the second aspect mentioned above can be found in the relevant descriptions in the first aspect mentioned above, and will not be repeated here.
[0018] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this specification. Attached Figure Description
[0019] Figure 1 A schematic diagram of the cross-sectional structure (isolation and buffer step structure) of a perovskite photovoltaic module provided in an embodiment of the present invention. Figure 2 for Figure 1 A top view of the perovskite photovoltaic module provided in the embodiment; Figure 3 A top view schematic diagram showing the positional relationship between the trench and the isolation buffer step structure of the perovskite photovoltaic module provided in an embodiment of the present invention; Explanation of reference numerals in the attached figures: 1. Glass substrate; 2. Bottom transparent conductive layer; 3. First trench structure; 4. Isolation buffer step microstructure; 41. Intermediate limiting step; 42. Boundary limiting guard edge; 43. Low stress transparent conductive buffer strip; 5. Second trench structure; 6. Third trench structure; 7. Sub-cell. Detailed Implementation
[0020] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.
[0021] Unless otherwise expressly defined, the use of terms such as "first," "second," or "third" in the claims, description, and accompanying drawings of this invention is for distinguishing different objects and not for describing a specific order.
[0022] Similar to the understanding in the Examination Guidelines, in this application, expressions such as "greater than," "less than," and "exceeding" are understood to exclude the stated number; expressions such as "above," "below," and "within" are understood to include the stated number. Furthermore, in the description of the embodiments in this application, "multiple" means two or more (including two), and similar expressions related to "multiple" are also understood in this way, such as "multiple groups" and "multiple times," unless otherwise explicitly specified.
[0023] In the claims, description and accompanying drawings of this invention, the terms "comprising," "having," and variations thereof are used to mean "including but not limited to."
[0024] Unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," "fixing," and "setting," etc., used in the description of the embodiments of this application should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral setting; it can be a mechanical connection, an electrical connection, or a communication connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two components or the interaction between two components. For those skilled in the art to which this application pertains, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.
[0025] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.
[0026] It should also be understood that the term “and / or” as used in this application specification means any combination of one or more of the associated listed items, as well as all possible combinations, and includes such combinations.
[0027] To address the series of problems caused by trench overlap during photovoltaic module manufacturing, conventional improvement methods rely on optimizing visual calibration, widening the trench safety spacing, and narrowing the laser energy window. However, these methods also introduce new problems. Widening the trench spacing increases the ineffective dead zone, reduces the effective light-receiving area, and lowers the short-circuit current and conversion efficiency. Simple parameter optimization has extremely low fault tolerance, and even a small offset can trigger overlap over-etching defects, failing to fundamentally solve the problem of the coupling and deterioration of the two types of defects.
[0028] This invention sets up an integrated isolation buffer step microstructure in the interconnection area of adjacent sub-cells. By pre-setting a physical safety tolerance range through structural morphology, it limits the overlap of adjacent trenches from a physical level. At the same time, the thickened isolation buffer step microstructure is conducive to laser thermal diffusion, reduces the risk of over-etching and breaking down the transparent conductive layer in the overlapping area, and improves the yield and long-term stability of the component.
[0029] Please see Figures 1 to 3 The preparation method of the perovskite photovoltaic module provided by the present invention will now be described.
[0030] Example 1 The method for preparing a perovskite photovoltaic module provided in Example 1 includes: S100, deposit a bottom transparent conductive layer 2 on a glass substrate 1; S200, an isolation buffer step microstructure 4 that is higher than the bottom transparent conductive layer 2 is prepared in the interconnection region of the sub-cell 7; S300, the isolation buffer step microstructure 4 is located in the interval and on both sides of the interval by laser etching of groove structures.
[0031] Example 2 The method for preparing a perovskite photovoltaic module provided in Example 2 includes: S100, deposit a bottom transparent conductive layer 2 on a glass substrate 1; S200, using laser pre-etching, an isolation buffer step microstructure 4, which is higher than the bottom transparent conductive layer 2, is prepared in the interconnection region of the sub-cell 7; the transparent conductive buffer layers prepared simultaneously on both sides of the isolation buffer step microstructure 4 are subjected to low-temperature annealing to eliminate film stress and form a low-stress transparent conductive buffer band 43; the height of the middle limiting step 41 of the isolation buffer step microstructure 4 is 0.2 μm; the overall width of the isolation buffer step microstructure 4 is controlled at 20 μm; S300, the first trench structure 3 is laser-etched on the low-stress transparent conductive buffer strip 43 on the first outer side of the isolation buffer step microstructure 4; S400 is coated with a hole transport layer, a perovskite light absorption layer and an electron transport layer in sequence over the entire area. S500 laser-etches the second trench structure 5 within the area where the isolation buffer step microstructure 4 is located. S600 vapor-deposited metal back electrode; S700 laser-etches the third trench structure 6 on the low-stress transparent conductive buffer strip 43 on the second outer side of the isolation buffer step microstructure 4. S800 post-processing and encapsulation yield perovskite photovoltaic modules.
[0032] Example 3 S100, deposit a bottom transparent conductive layer 2 on a glass substrate 1; S200, using photolithography, an isolation buffer step microstructure 4 that extends above the bottom transparent conductive layer 2 is fabricated in the interconnect region of the sub-cell 7; the transparent conductive buffer layers fabricated simultaneously on both sides of the isolation buffer step microstructure 4 are subjected to low-temperature annealing to eliminate film stress and form a low-stress transparent conductive buffer band 43; the height of the middle limiting step 41 of the isolation buffer step microstructure 4 is 0.5 μm; the overall width of the isolation buffer step microstructure 4 is controlled at 40 μm; S300, the first trench structure 3 is laser-etched on the low-stress transparent conductive buffer strip 43 on the first outer side of the isolation buffer step microstructure 4; S400 is coated with a hole transport layer, a perovskite light absorption layer and an electron transport layer in sequence over the entire area. S500 laser-etches the second trench structure 5 within the area where the isolation buffer step microstructure 4 is located. S600 vapor-deposited metal back electrode; S700 laser-etches the third trench structure 6 on the low-stress transparent conductive buffer strip 43 on the second outer side of the isolation buffer step microstructure 4. S800 post-processing and encapsulation yield perovskite photovoltaic modules.
[0033] Example 4 In S200, the height of the intermediate limiting step 41 of the isolation buffer step microstructure 4 is 0.3μm; the overall width of the isolation buffer step microstructure 4 is controlled at 30μm.
[0034] The structural functions mentioned above are explained below: Perovskite photovoltaic modules are a new generation of solar cell technology that uses materials with a perovskite crystal structure as the core light-absorbing layer. The materials are inexpensive and can be mass-produced using a low-cost solution coating method, resulting in a relatively simple manufacturing process. Perovskite materials can be made very thin and flexible, adapting to various carriers and opening up possibilities for new applications such as building-integrated photovoltaics (BIPV), flexible wearable devices, and even space photovoltaics. The single-cell series perovskite photovoltaic module uses three laser scribing lines to divide a large area of perovskite thin film into multiple sub-cells; 7. internal series-connected photovoltaic devices. First trench structure 3: Etching through the bottom transparent conductive layer 2 TCO to isolate the bottom electrode of the adjacent sub-cell 7; Second trench structure 5: Etching the perovskite light absorption layer and electron transport layer, retaining the complete TCO, and filling the back metal to realize the series connection of sub-cells 7; Third trench structure 6: Etch back electrode and upper functional layer to isolate top metal electrode and prevent lateral bypass; The isolation buffer step microstructure 4 is arranged in the series region of the sub-cell 7 and has a micron-level morphological structure with a middle limiting step 41 and a low-stress transparent conductive buffer strip 43. The low-stress transparent conductive buffer strips 43 on both sides are annealed to reduce stress and suppress laser-induced cracking. The height of the middle limiting step 41 is 0.2~0.5μm, and the lateral width of the step is preset to the minimum safe offset tolerance width of the groove. The film thickness in the step area is increased, and the laser energy is absorbed by the step buffer and cannot penetrate the TCO downward. The boundary limiting stop 42 forms a physical boundary at both ends of the step, which limits the machinable range of adjacent grooves. Even if there is a ±5μm alignment offset in the scribing, the grooves cannot overlap.
[0035] Transparent conductive layer TCO: ITO / FTO transparent conductive oxide, used as the front electrode substrate of the battery.
[0036] TCO is an abbreviation for Transparent Conductive Oxide. It plays an extremely important role in perovskite solar cells (as well as liquid crystal displays, touch screens, etc.).
[0037] FTO (fluorine-doped tin oxide): High hardness, high temperature resistance (able to withstand the ~500℃ high temperature of subsequent HTL / perovskite annealing process), and low cost. The disadvantages are that its conductivity is slightly lower than that of ITO, and it is more brittle during laser scribing, making it more prone to microcracks due to thermal stress.
[0038] ITO (Indium Tin Oxide, a high-performance option): It has excellent conductivity and a smooth surface, but poor temperature resistance (resistivity deteriorates sharply above 300°C), and indium is scarce and expensive. It is commonly used in flexible perovskite modules that require low-temperature annealing.
[0039] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.
[0040] Based on the same inventive concept, this application also provides a perovskite photovoltaic module, such as... Figures 1 to 3 As shown, the perovskite photovoltaic module is fabricated using a method that includes, from bottom to top, a glass substrate 1, a bottom transparent conductive layer 2, an isolation buffer step microstructure 4, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a metal back electrode; the interconnection area of adjacent sub-cells 7 is provided with the isolation buffer step microstructure 4; the height of the isolation buffer step microstructure 4 in the vertical direction is higher than that of the bottom transparent conductive layer 2.
[0041] Hole transport layer (HTL): responsible for extracting and transporting photogenerated "holes" (positive charges); perovskite light-absorbing layer: the core layer, only a few hundred nanometers thick, responsible for absorbing sunlight and generating electron-hole pairs; electron transport layer (ETL): responsible for extracting and transporting "electrons" (negative charges); top electrode: usually a metal electrode (such as gold or silver), forming a circuit with the bottom transparent electrode.
[0042] In one feasible approach, see [link to relevant documentation] Figure 1 As shown, the isolation buffer step microstructure 4 includes an intermediate limiting step 41, boundary limiting baffles 42 formed on both sides of the intermediate limiting step 41, and low-stress transparent conductive buffer strips 43 on both sides. The height of the boundary limiting baffles 42 is higher than that of the intermediate limiting step 41, and the height of the low-stress transparent conductive buffer strips 43 is lower than that of the intermediate limiting step 41.
[0043] In the above embodiments, the isolation buffer step microstructure 4 includes a low-stress TCO buffer strip and a thickened limiting step, which has the dual functions of preventing groove overlap and dispersing laser thermal load: the low-stress transparent conductive buffer strips 43 on both sides are annealed to reduce stress and suppress laser thermal cracking; the film thickness in the step area is increased so that the laser energy can be absorbed by the step buffer and cannot penetrate the TCO downwards; the boundary limiting stop 42 forms a physical boundary at both ends of the step, limiting the machinable range of adjacent grooves, so that even if there is a ±5μm alignment offset in the scribing, the grooves cannot overlap.
[0044] In one possible implementation, the height of the intermediate limiting step 41 is 0.2~0.5μm. For example, the height of the intermediate limiting step 41 is 0.2μm, 0.25μm, 0.28μm, 0.3μm, 0.32μm, 0.35μm, 0.36μm, 0.4μm, 0.41μm, 0.44μm, 0.45μm, 0.49μm, 0.5μm, etc.
[0045] Furthermore, the lateral width of the intermediate limiting step 41 is preset to the minimum safe offset tolerance width of the groove, and the overall width of the isolation buffer step microstructure 4 is 20~40μm. Even if there is a deviation in laser alignment, adjacent grooves cannot overlap. For example, the overall width of the isolation buffer step microstructure 4 is 20μm, 22μm, 25μm, 26μm, 27.5μm, 28μm, 30μm, 30.5μm, 31μm, 33μm, 35μm, 37μm, 38μm, 40μm, etc.
[0046] The above embodiment limits the minimum safe offset tolerance width of the intermediate limiting step 41, so that even if the laser scribing has a ±5μm alignment offset, the grooves cannot overlap, thereby avoiding the possibility of groove overlap from a physical structure point of view, and thus avoiding problems such as thermal damage and cracks caused by overlap.
[0047] The method for preparing perovskite photovoltaic modules provided by this invention has the following advantages compared with the prior art: First, it can avoid the overlap of adjacent trenches: Compared with the existing interconnect area without physical limiting structure, which makes it easy for adjacent trenches to locally overlap when laser scribing produces micron-level alignment misalignment; this invention sets a stepped isolation buffer step microstructure in the interconnect area of sub-cell connection to form a physical limiting boundary. Even if there is conventional micron-level misalignment in laser scribing, adjacent trenches cannot overlap, thereby eliminating the heat superposition of double lasers in the same area. This can improve the thermal damage problem caused by trench overlap due to processing misalignment during laser scribing, reduce the series resistance loss and leakage probability of sub-cell interconnection, and improve the output stability and photoelectric conversion efficiency of perovskite photovoltaic modules.
[0048] Secondly, it can prevent heat from concentrating and directly penetrating the perovskite light-absorbing layer and breaking down the underlying transparent conductive layer: The isolation buffer step microstructure thickens the breakdown thickness of the transparent conductive layer. When a slight deviation in the laser scribing causes local overlap, the thickened step can absorb the laser heat, disperse heat diffusion, and prevent the laser from over-scribing and breaking down the bottom transparent conductive layer. This significantly reduces module leakage defects, improves parallel resistance, ensures complete series conductive channels, reduces series resistance, and significantly improves the module's fill factor (FF), short-circuit current density (Jsc), and open-circuit voltage (Voc). This also significantly improves conversion efficiency, reduces the defect rate of dark stripes in electroluminescence (EL) imaging, and improves the module's yield.
[0049] The present invention can be used to improve the structure of photovoltaic modules without modifying the laser scribing equipment, resulting in low production line modification costs. It is compatible with existing whole-piece coating and evaporation mass production processes and has strong versatility.
[0050] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A method for preparing a perovskite photovoltaic module, characterized in that, include: A bottom transparent conductive layer (2) is deposited on a glass substrate (1); An isolation buffer step microstructure (4) that is higher than the bottom transparent conductive layer (2) is prepared in the interconnection region of the sub-cell (7); In the area where the isolation buffer step microstructure (4) is located and on both sides therein, the groove structure is laser-etched stepwise.
2. The method for preparing a perovskite photovoltaic module as described in claim 1, characterized in that, The isolation buffer step microstructure (4) is located in the interval and on both sides of which a stepwise laser-etched trench structure is formed, including: The first trench structure (3) is laser-etched on the first outer side of the isolation buffer step microstructure (4); The hole transport layer, perovskite light absorption layer, and electron transport layer are sequentially coated across the entire area. The second trench structure (5) is laser-etched within the area where the isolation buffer step microstructure (4) is located; Vaporized metal back electrode; The isolation buffer step microstructure (4) is laser-etched with a third trench structure (6) on the second outer side relative to the first outer side.
3. The method for preparing a perovskite photovoltaic module as described in claim 1, characterized in that, An isolation buffer microstep structure is fabricated in the interconnect region of the sub-cell (7) that is higher than the underlying transparent conductive layer (2), including: The isolation buffer step microstructure is prepared in the interconnect region by photolithography or laser pre-etching (4); The transparent conductive buffer layer prepared simultaneously on both sides of the isolation buffer step microstructure (4) is subjected to low-temperature annealing to eliminate film stress and form a low-stress transparent conductive buffer band (43). The groove structure is respectively etched on the low-stress transparent conductive buffer strip (43) and the isolation buffer step microstructure (4) on both sides.
4. The method for preparing a perovskite photovoltaic module as described in claim 3, characterized in that, The isolation buffer step microstructure (4) includes an intermediate limiting step (41), boundary limiting baffles (42) formed on both sides of the intermediate limiting step (41), and low-stress transparent conductive buffer strips (43) on both sides. The height of the boundary limiting baffles (42) is higher than that of the intermediate limiting step (41), and the height of the low-stress transparent conductive buffer strips (43) is lower than that of the intermediate limiting step (41).
5. The method for preparing a perovskite photovoltaic module as described in claim 4, characterized in that, The width of the intermediate limiting step (41) is preset to be the minimum safe offset tolerance width of the groove structure.
6. The method for preparing a perovskite photovoltaic module as described in claim 4, characterized in that, The height of the intermediate limiting step (41) is 0.2~0.5μm.
7. The method for preparing a perovskite photovoltaic module as described in claim 1, characterized in that, The overall width of the isolation buffer step microstructure (4) is 20~40μm.
8. A perovskite photovoltaic module, manufactured using the method for preparing a perovskite photovoltaic module as described in any one of claims 1-7, characterized in that, From bottom to top, it includes: a glass substrate (1), a bottom transparent conductive layer (2), an isolation buffer step microstructure (4), a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a metal back electrode; the interconnection area of adjacent sub-cells (7) is provided with an isolation buffer step microstructure (4); the height of the isolation buffer step microstructure (4) in the vertical direction is higher than that of the bottom transparent conductive layer (2).
9. The perovskite photovoltaic module as described in claim 8, characterized in that, The isolation buffer step microstructure (4) includes an intermediate limiting step (41), boundary limiting baffles (42) formed on both sides of the intermediate limiting step (41), and low-stress transparent conductive buffer strips (43) on both sides. The height of the boundary limiting baffles (42) is higher than that of the intermediate limiting step (41), and the height of the low-stress transparent conductive buffer strips (43) is lower than that of the intermediate limiting step (41).
10. The perovskite photovoltaic module as described in claim 9, characterized in that, The height of the intermediate limiting step (41) is 0.2~0.5μm.