Method for manufacturing perovskite / silicon-based tandem solar cell, perovskite / silicon-based tandem solar cell

Abstract

The application relates to a manufacturing method of a perovskite / silicon-based laminated solar cell and the perovskite / silicon-based laminated solar cell, and belongs to the technical field of solar cells.The manufacturing method comprises the following steps: providing a cell piece of the perovskite / silicon-based laminated solar cell, forming a first electrode on a first side of the cell piece through silk screen printing, forming a mask layer on the first electrode, forming a protective layer on the first side, the protective layer covering the first side and covering the mask layer, processing the first side of the cell piece, removing the mask layer and the protective layer located on the first electrode, and obtaining the perovskite / silicon-based laminated solar cell.The protective layer can form waterproof protection for the first electrode, avoids the influence of water vapor, the obtained perovskite / silicon-based laminated solar cell does not affect the subsequent process of forming a solar cell module through series and parallel connection between the perovskite / silicon-based laminated solar cell and other solar cells, and continuous production can be realized.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and in particular to a method for manufacturing a perovskite / silicon-based tandem solar cell and a perovskite / silicon-based tandem solar cell. Background Technology

[0002] Solar cell modules are assembled from multiple solar cells. The manufacturing process of the cells and the assembly process of the modules are typically carried out in different factories. This means that the finished cells need to be packaged and transported to the module factory for assembly, requiring overcoming the effects of moisture during packaging and transportation. A common method is to prepare a waterproof material layer on the surface of the cells. This waterproof material is generally insulating and is applied to the grid electrodes during preparation. Before assembly, laser etching or chemical etching is performed to remove the waterproof material from the grid electrodes. However, laser etching equipment is expensive, increasing costs; and the organic solvents used in chemical etching may corrode the cells, affecting their performance. Summary of the Invention

[0003] Therefore, it is necessary to address the problem of removing the waterproof material layer on the grid electrodes of the solar cell by providing a perovskite / silicon-based tandem solar cell and its manufacturing method, as well as a perovskite / silicon-based tandem solar cell.

[0004] In a first aspect, embodiments of this application provide a method for manufacturing a perovskite / silicon-based tandem solar cell, comprising:

[0005] S1. A cell for a perovskite / silicon-based tandem solar cell is provided, and a first electrode is formed on a first side of the cell by screen printing;

[0006] S2. A mask layer is formed on the first electrode;

[0007] S3. A protective layer is formed on the first side of the battery cell, the protective layer covering the first side and the mask layer;

[0008] S4. Process the first side of the solar cell to remove the mask layer and the protective layer located on the first electrode, thereby obtaining the perovskite / silicon-based tandem solar cell.

[0009] Optionally, in step S2, the mask layer is formed on the first electrode by screen printing.

[0010] Optionally, step S2 further includes: curing the mask layer after it is formed; the curing method is ultraviolet light curing or baking curing, and the baking temperature is 60℃~120℃.

[0011] Optionally, the first electrode is a gate line electrode;

[0012] The length of the mask layer is less than the length of the first electrode in which it is located;

[0013] And / or, the width of the mask layer is not equal to the width of the first electrode in which it is located;

[0014] And / or, the thickness of the mask layer is 1 μm to 100 μm;

[0015] And / or, the distance d between the mask layer and the edge of the first electrode is greater than 1 mm.

[0016] Optionally, the mask layer is selected from at least one of alumina slurry, silica slurry, UV peelable adhesive, peelable blue adhesive, polyurethane, and silicone-modified resin.

[0017] Optionally, the alumina slurry comprises alumina nanoparticles and an organic solvent, and the viscosity of the alumina slurry is 50 Pa·s to 400 Pa·s; and / or, the silica slurry comprises silica nanoparticles and an organic solvent, and the viscosity of the silica slurry is 50 Pa·s to 400 Pa·s; the organic solvent is selected from at least one of isopropanol, isobutanol, γ-valerolactone, γ-butyrolactone, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, ethylene glycol acetate, ethylene glycol butyl ether, propylene glycol phenyl ether, ethylene glycol phenyl ether, modified polyurethane, hydroxyethyl methacrylate, hexanediol diacrylate, and tripropylene glycol diacrylate.

[0018] Optionally, the mask layer is a patterned mask layer; and / or, the mask layer is a patterned mask layer, the first electrode includes a soldering area and a non-soldering area, and the width d1 of the soldering area is greater than the width d2 of the non-soldering area, and the patterned mask layer is located on the soldering area of ​​the first electrode.

[0019] Optionally, the protective layer has at least one layer, and the material forming each protective layer is selected from at least one of silicon nitride, silicon oxide, and silicon oxynitride; and the thickness of the protective layer is 0.01 μm to 20 μm.

[0020] Optionally, in step S4, the mask layer and the protective layer located on the first electrode are removed by purging or mechanical means to obtain the perovskite / silicon-based tandem solar cell.

[0021] Secondly, embodiments of this application provide a perovskite / silicon-based tandem solar cell, which is prepared by the manufacturing method of the perovskite / silicon-based tandem solar cell described in the first aspect.

[0022] The manufacturing method of the perovskite / silicon-based tandem solar cell provided in this application embodiment provides a perovskite / silicon-based tandem solar cell cell, forms a first electrode on a first side of the cell by screen printing, forms a mask layer on the first electrode, forms a protective layer on the first side of the cell, the protective layer covers the first side and covers the mask layer, processes the first side of the cell to remove the mask layer and the protective layer located on the first electrode, and obtains the perovskite / silicon-based tandem solar cell. The method of forming the first electrode on the first side by screen printing simplifies the first electrode formation process and is suitable for mass production. The manufacturing method of forming a mask layer on the first electrode and a protective layer on the first side allows the protective layer to cover the first side and the mask layer. The protective layer can provide waterproof protection for the first electrode, avoiding the impact of moisture during packaging and transportation to the module factory. The method of removing the mask layer and the protective layer on the first electrode can expose the first electrode. The removal method is simple and convenient, reducing the risk of damage to the first electrode. The resulting perovskite / silicon-based tandem solar cell does not affect the subsequent process of connecting it in series and parallel with other solar cells to form a solar cell module, which can realize continuous production and improve the production efficiency of solar cells. Attached Figure Description

[0023] Figure 1 A flowchart illustrating the manufacturing method of the perovskite / silicon-based tandem solar cell provided in the embodiments of this application;

[0024] Figure 2 This is a schematic diagram of the combined structure of the cell, mask layer, and protective layer in the manufacturing method of the perovskite / silicon-based tandem solar cell provided in the embodiments of this application;

[0025] Figure 3 This is a schematic diagram of the structure of a perovskite / silicon-based tandem solar cell manufactured by the manufacturing method of the perovskite / silicon-based tandem solar cell provided in the embodiments of this application.

[0026] Figure 4 This is a schematic diagram of a first structure of the combination of cell, first electrode and mask layer in the manufacturing method of perovskite / silicon-based tandem solar cell provided in the embodiments of this application;

[0027] Figure 5 for Figure 4 The diagram shows the combined structure of the first electrode and the mask layer.

[0028] Figure 6 This is a schematic diagram of a second structure of the combination of cell, first electrode and mask layer in the manufacturing method of perovskite / silicon-based tandem solar cell provided in the embodiments of this application;

[0029] Figure 7 for Figure 6A magnified structural diagram at point A;

[0030] Figure 8 for Figure 6 A partial structural schematic diagram of the BB-directed cross-sectional view;

[0031] Figure 9 This is a schematic diagram of a third structure for the combination of the first electrode and the mask layer in the manufacturing method of the perovskite / silicon-based tandem solar cell provided in the embodiments of this application;

[0032] Figure 10 This is a schematic diagram of the structure of the cell in the perovskite / silicon-based tandem solar cell provided in the embodiments of this application.

[0033] Explanation of reference numerals in the attached figures

[0034] 100. Perovskite / silicon-based tandem solar cells;

[0035] 10. Solar cell; 101. First side surface; 102. Second side surface; 11. First electrode; 111. Welded area; 112. Non-welded area; 12. Second electrode; 13. Bottom cell; 14. Composite layer; 15. Top cell; 151. Hole transport layer; 152. Perovskite layer; 153. Electron transport layer; 154. Buffer layer; 155. Transparent conductive layer;

[0036] 20. Mask layer;

[0037] 30. Protective layer. Detailed Implementation

[0038] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the embodiments of this application. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0039] In the description of this application, "a plurality of" means two or more, unless otherwise expressly specified. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, features defined as "first" or "second" may explicitly or implicitly include one or more features.

[0040] In the description of this application, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from others, as long as the purpose of the process can be achieved. Furthermore, in this specification, the numerical range indicated by "~" represents a range where the values ​​before and after the "~" are respectively the minimum and maximum values. Additionally, in this specification, the term "layer," when viewed in a plan view, includes not only the shape formed on the entire surface but also the shape formed on a portion of the surface.

[0041] The following disclosure provides many different implementations or examples for carrying out different structures of this application. To simplify the disclosure of this application, the components and arrangements of specific examples are described below. Of course, these are merely examples and are not intended to limit this application.

[0042] In some embodiments of this application, a method for manufacturing a perovskite / silicon-based tandem solar cell is provided, referring to... Figures 1-3 The manufacturing methods include:

[0043] S1. A cell 10 for a perovskite / silicon-based tandem solar cell is provided, and a first electrode 11 is formed on the first side 101 of the cell 10 by screen printing.

[0044] S2. A mask layer 20 is formed on the first electrode 11;

[0045] S3. A protective layer 30 is formed on the first side 101 of the battery cell 10, the protective layer 30 covers the first side 101 and covers the mask layer 20.

[0046] S4. Process the first side 101 of the cell 10 to remove the mask layer 20 and the protective layer 30 located on the first electrode 11 to obtain the perovskite / silicon-based tandem solar cell 100.

[0047] Taking perovskite / silicon tandem solar cell modules as an example, a perovskite / silicon tandem solar cell module is assembled from multiple perovskite / silicon tandem solar cells through a series-parallel connection process. The manufacturing process of perovskite / silicon tandem solar cell modules includes a cell manufacturing process and a cell assembly process. The cell manufacturing process is the process of manufacturing perovskite / silicon tandem solar cells, and the cell assembly process is the process of assembling multiple perovskite / silicon tandem solar cells to form a solar cell module.

[0048] Typically, manufacturing and assembly processes are carried out in different areas or factories. This means that finished perovskite / silicon tandem solar cells need to be packaged and transported to the module factory for assembly, requiring overcoming the effects of moisture during packaging and transportation. A common method is to prepare a waterproof material layer on the surface of the cell. This waterproof material is generally insulating and is applied to the grid electrodes during preparation, protecting them. Before assembly, the waterproof material layer on the grid electrodes needs to be removed to expose them for assembly.

[0049] One method for removing the waterproofing material layer is laser etching or chemical etching to remove the waterproofing material from the grid electrodes. However, laser etching equipment is expensive, increasing costs; the organic solvents in chemical etching may corrode the solar cells, affecting their performance, and the operation is complex and time-consuming, which is not conducive to continuous production. Moreover, laser etching carries the risk of damaging the perovskite cells in perovskite / silicon tandem solar cells.

[0050] Another method involves placing a mask on the surface of the perovskite / silicon tandem solar cell or applying high-temperature tape to the grid electrodes before preparing the waterproof material layer. This masking process is then performed on the grid electrodes. The waterproof material layer is then removed by removing the mask or tape. However, this method is prone to damaging the grid electrodes, is complex, time-consuming, and not conducive to automated mass production. Furthermore, the high-temperature tape application method carries the risk of damaging the perovskite cells within the perovskite / silicon tandem solar cell.

[0051] The manufacturing method of the perovskite / silicon-based tandem solar cell provided in this application includes: providing a perovskite / silicon-based tandem solar cell cell 10; forming a first electrode 11 on a first side 101 of the cell 10 by screen printing, simplifying the formation process of the first electrode 11 and making it suitable for mass production; then forming a mask layer 20 on the first electrode 11; forming a protective layer 30 on the first side 101 of the cell 10, the protective layer 30 covering the first side 101 and the mask layer 20; processing the first side 101 of the cell 10 to remove the mask layer 20 and the protective layer 30 located on the first electrode 11, thereby obtaining the perovskite / silicon-based tandem solar cell 100.

[0052] The manufacturing method of forming a mask layer 20 on the first electrode 11 and a protective layer 30 on the first side 101 allows the protective layer 30 to cover the first side 101 and the mask layer 20. The protective layer 30 provides waterproof protection for the first electrode 11, preventing it from being affected by moisture during packaging and transportation to the module factory. Removing the mask layer 20 and the protective layer 30 from the first electrode 11 exposes the first electrode 11. The removal method is simple and convenient, reducing the risk of damage to the first electrode 11. The resulting perovskite / silicon-based tandem solar cell 100 does not affect the subsequent assembly process of connecting it in series and parallel with other solar cells to form a solar cell module. The removal method of the mask layer 20 is simple and quick, enabling continuous production and improving the production efficiency of the perovskite / silicon-based tandem solar cell 100.

[0053] In some embodiments, refer to Figures 1-3 The battery cell 10 has a first side surface 101 and a second side surface 102 disposed opposite to each other along the thickness direction. The first side surface 101 is the light-receiving surface, the first electrode 11 is the positive electrode, and the second side surface 102 is the back-light surface. A second electrode 12 is disposed on the second side surface 102, and the second electrode 12 is the back electrode.

[0054] In some embodiments, refer to Figure 3 The solar cell 10 includes a bottom cell 13 and a top cell 15 stacked together. The bottom cell 13 is a silicon-based cell, and the top cell 15 is a perovskite cell, so that the solar cell 10 forms a perovskite / silicon-based tandem solar cell.

[0055] In some embodiments, refer to Figure 3 The manufacturing method of the solar cell 10 includes:

[0056] S11. A bottom cell 13 is provided. The bottom cell 13 adopts a small textured heterojunction silicon-based solar cell with a texture height of 500nm~1000nm. A second electrode 12 is formed on one side of the bottom cell 13.

[0057] S12. A composite layer 14 is formed on the other side of the bottom cell 13. The material of the composite layer 14 is selected from at least one of IZO (indium zinc oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), IZrO (indium zirconium oxide), VTTO, and ICO (cerium-doped indium oxide). The thickness of the composite layer 14 is 0 nm to 50 nm.

[0058] S13. Prepare a hole transport layer 151 on the composite layer 14. The material of the hole transport layer 151 is selected from MeO-4PACz ([4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid), Me-4PACz ([4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid), Me-2PACz ([2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid), MeO-2PAcz ([2-(3,6-dimethyl-9H-carbazole-9-yl)ethyl]phosphonic acid), S540, PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), PEDOT (poly(3,4-ethylenedioxythiophene)), NiO x At least one of nickel oxide, MoO3 (molybdenum trioxide), and CuS (copper sulfide). In some embodiments, the hole transport layer 151 is prepared by any one of solution method, spin coating, slot coating, blade coating, inkjet printing, chemical bath deposition, vacuum evaporation, and magnetron sputtering.

[0059] S14. A perovskite layer 152 is prepared on the hole transport layer 151 using a one-step solution method. The perovskite layer 152 is selected from any one of CsFAMAPbX3, CsFAPbX3, CsMAPbX3, MAPbX3, and FAPbX3, wherein X is selected from one or two of Cl, Br, and I. The preparation method of the perovskite layer 152 is selected from one or two of spin coating, blade coating, slot coating, inkjet printing, and vacuum evaporation.

[0060] S15. A 5-20 nm C60 electron transport layer 153 is deposited on the perovskite layer 152.

[0061] S16. Prepare 5-20 nm SnO on electron transport layer 153 using ALD (atomic layer deposition). x Buffer layer 154.

[0062] S17. A transparent conductive layer 155 of 20nm-100nm is prepared on the buffer layer 154 by magnetron sputtering to obtain the battery cell 10. The material of the transparent conductive layer 155 is selected from at least one of IZO (indium zinc oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), IZrO (indium zirconium oxide), VTTO, and ICO (cerium-doped indium oxide).

[0063] In some embodiments, in step S1, after forming the first electrode 11, it is annealed at 80°C to 200°C for 5 min to 20 min.

[0064] In some embodiments, in step S2, the mask layer 20 is formed on the first electrode 11 by screen printing. Forming the mask layer 20 on the first electrode 11 by screen printing is less expensive and simpler to operate than placing a mask plate or applying high-temperature tape, which is beneficial for automated mass production and improves production efficiency.

[0065] In some embodiments, step S2 further includes: curing the mask layer 20 after its formation; the curing method is ultraviolet light curing or baking curing, with a baking temperature of 60°C to 120°C. In some implementations, the baking temperature can be any value from 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, and 120°C, or any value within a range of any two values. Curing the mask layer 20 at a low temperature within the range of 60°C to 120°C is more favorable for perovskite solar cells compared to laser etching or high-temperature adhesive tape application, reducing the risk of damage to the perovskite solar cells.

[0066] In some embodiments, refer to Figure 4 The first electrode 11 is a grid line electrode; the length of the mask layer 20 is less than the length of the first electrode 11. The shorter length of the mask layer 20 compared to the first electrode 11 allows the mask layer 20 to cover a portion of the first electrode 11, thereby allowing the protective layer 30 to cover the edges of the first electrode 11 and the battery cell and form a continuous protective layer. This provides waterproof protection for the edges of the first electrode 11 and the battery cell 10, improving the overall waterproof protection effect of the battery cell 10.

[0067] In some embodiments, the width of the mask layer 20 is not equal to the width of the first electrode 11. In some implementations, the width of the mask layer 20 is smaller than the width of the first electrode 11, thereby forming a continuous protective layer on the surface of the solar cell and improving the overall waterproof protection of the solar cell.

[0068] In some embodiments, the thickness of the mask layer 20 is 1 μm to 100 μm. Specifically, the thickness of the mask layer 20 can be any value selected from 1 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, and 100 μm, or any value within a range of any two values. When the thickness of the mask layer 20 is within the above range, it is easier to remove it from the first electrode 11.

[0069] In some embodiments, refer to Figure 5The distance d between the mask layer 20 and the edge of the first electrode 11 is greater than 1 mm. This ensures that the protective layer 30 covers and protects the edge of the first electrode 11, ensuring the waterproof protection effect of the first electrode 11, and facilitating the removal of the mask layer 20. If the width of the mask layer 20 is greater than that of the first electrode 11, that is, if the mask layer 20 covers the first electrode 11, it will increase the difficulty of subsequently removing the mask layer 20 and the protective layer 30 above the mask layer 20.

[0070] In some embodiments, the mask layer 20 is selected from at least one of alumina paste, silica paste, UV peelable adhesive, peelable blue adhesive, polyurethane, and silicone-modified resin. When the mask layer 20 is selected from the above materials, the mask layer 20 can be removed from the first electrode 11 by air gun blowing or mechanical peeling, thereby improving the efficiency of mask layer 20 removal in step S4 and reducing the risk of damage to the first electrode 11.

[0071] In some embodiments, the alumina slurry comprises alumina nanoparticles and an organic solvent, and the viscosity of the alumina slurry is 50 Pa·s to 400 Pa·s.

[0072] In some embodiments, the silica slurry comprises silica nanoparticles and an organic solvent, and the viscosity of the silica slurry is 50 Pa·s to 400 Pa·s.

[0073] In some embodiments, the organic solvent is selected from at least one of isopropanol, isobutanol, γ-valerolactone, γ-butyrolactone, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, ethylene glycol acetate, ethylene glycol butyl ether, propylene glycol phenyl ether, ethylene glycol phenyl ether, modified polyurethane, hydroxyethyl methacrylate, hexanediol diacrylate, and tripropylene glycol diacrylate.

[0074] In some embodiments, in step S2, the mask layer 20 is selected as a peelable blue adhesive, and in step S3, one or more protective layers 30 are formed by PECVD (plasma-enhanced chemical vapor deposition) or hot filament CVD (chemical vapor deposition).

[0075] In some embodiments, in step S2, the mask layer 20 is selected as peelable blue adhesive. After the mask layer 20 is formed, the mask layer 20 is baked and cured at a baking temperature of 80°C to 120°C.

[0076] In some embodiments, in step S2, the mask layer 20 is selected as silica slurry, and in step S3, one or more protective layers 30 are formed by PECVD (plasma-enhanced chemical vapor deposition) or hot-wire CVD (chemical vapor deposition).

[0077] In some embodiments, refer to Figures 6-9The mask layer 20 is a patterned mask layer. Multiple mask layers 20 are present on each first electrode 11 and are spaced apart along the length of the first electrode 11. The patterned mask layer, compared to the mask layer 20 that completely covers the top of the first electrode 11, is easier to remove during subsequent purging or mechanical removal processes, further reducing damage to the solar cell during the removal of the mask layer and the protective layer above it.

[0078] In some embodiments, refer to Figure 8 In addition to covering the first side 101 located outside the first electrode 11, the protective layer 30 also covers the edge of the first electrode 11 facing away from the battery cell 10. The length of the protective layer 30 covering the side of the first electrode 11 facing away from the battery cell 10 is L, in mm, which is the distance from the mask layer 20 to the edge of the first electrode 11 in the length direction. This arrangement ensures that the protective layer 30 covers the edges of the first electrode 11 and the battery cell, forming a continuous protective layer, thus providing waterproof protection for the edges of the first electrode 11 and the battery cell, and improving the overall waterproof protection effect of the battery cell.

[0079] In some embodiments, refer to Figure 9 The mask layer 20 is a patterned mask layer 20, and the first electrode 11 includes a welding region 111 and a non-welding region 112. The width d1 of the welding region 111 is greater than the width d2 of the non-welding region 112, and the patterned mask layer 20 is located on the welding region 111 of the first electrode 11. The welding region 111 is the connection area between the first electrode 11 and the first electrode in other perovskite / silicon tandem solar cells when the perovskite / silicon tandem solar cell 100 is connected in series and parallel with other perovskite / silicon tandem solar cells to form a solar cell module. The width d1 of the welding region 111 is greater than the width d2 of the non-welding region 112, and the arrangement of the mask layer 20 on the welding region 111 increases the area of ​​the mask layer 20, relative to... Figure 7 The smaller mask layer 20 and the larger pattern mask layer 20 are easier to remove in subsequent processes, thereby reducing the removal difficulty and further reducing the damage to the solar cell during the removal process.

[0080] In some embodiments, the protective layer 30 has at least one layer, and the material forming each protective layer 30 is selected from at least one of silicon nitride, silicon oxide, and silicon oxynitride. When the material forming the protective layer 30 is selected from the above materials, the protective layer 30 covering the edge of the first electrode 11 and the protective layer 30 covering the first side surface 101 outside the first electrode 11, in addition to having a water vapor isolation effect, can also have an anti-reflection effect, thereby increasing the current of the perovskite / silicon-based tandem solar cell 100.

[0081] In some embodiments, the protective layer 30 has two or more layers to form staggered layers, thereby achieving different refractive indices, improving the anti-reflection effect of the protective layer 30, and increasing the current of the perovskite / silicon-based tandem solar cell 100.

[0082] In some embodiments, the thickness of the protective layer 30 is 0.01 μm to 20 μm. Specifically, the thickness of the protective layer 30 can be any value among 0.01 μm, 1 μm, 5 μm, 10 μm, 15 μm, and 20 μm, or any value within a range of any two values.

[0083] In some embodiments, the solar cell 10 includes at least a perovskite solar cell 10, and in step S4, the mask layer 20 and the protective layer 30 located on the first electrode 11 are removed by purging or mechanical means to obtain a perovskite / silicon-based tandem solar cell 100. Compared with laser removal or chemical etching removal in the prior art, laser thermal stress can easily cause microcracks in the substrate and thin film, while chemical etching can erode the edges, resulting in jagged edges and reduced precision of the pattern. Mechanical peeling of the mask layer or purging peeling of the mask layer avoids thermal shock, chemical erosion, thermal damage, and chemical residue. Preferably, purging is used to remove the mask layer. Purging relies on high-pressure clean airflow to impact and peel off the mask, which is a non-contact process. There is no hard object directly rubbing against the substrate surface, further reducing the damage to the solar cell during the removal process. In addition, the use of dry inert purging gas can simultaneously remove static charge, reducing the breakdown damage of the solar cell to the device caused by static electricity.

[0084] Secondly, embodiments of this application provide a perovskite / silicon-based tandem solar cell 100, which is prepared by the manufacturing method of perovskite / silicon-based tandem solar cells as described above. See details... Figure 10 As shown, the solar cell includes a top cell and a bottom cell. The top cell is a perovskite cell, and the bottom cell is a silicon-based cell, such as a PERC cell, a TOPCon cell, or a heterojunction cell. The top cell and the bottom cell are electrically connected through a composite layer. The perovskite cell includes a hole transport layer 151, a perovskite layer 152, an electron transport layer 153, a buffer layer 154, and a transparent conductive layer 155 located on the buffer layer 154. The functional layers of the perovskite cell structure will not be further described here.

[0085] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations included in the claims. Various modifications and changes can be made to the above embodiments without departing from the scope of this disclosure. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of this application that may not be explicitly described. Therefore, the above embodiments only illustrate several implementations of this application and do not limit the scope of protection of this patent application.

Claims

1. A method for manufacturing a perovskite / silicon-based tandem solar cell, characterized in that, include: S1. A cell for a perovskite / silicon-based tandem solar cell is provided, and a first electrode is formed on a first side of the cell by screen printing; S2. A mask layer is formed on the first electrode; S3. A protective layer is formed on the first side of the battery cell, the protective layer covering the first side and the mask layer; S4. Process the first side of the solar cell to remove the mask layer and the protective layer located on the first electrode, thereby obtaining the perovskite / silicon-based tandem solar cell.

2. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 1, characterized in that, In step S2, the mask layer is formed on the first electrode by screen printing.

3. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 1, characterized in that, Step S2 further includes: After the mask layer is formed, the mask layer is cured. The curing method is ultraviolet light curing or baking curing, with a baking temperature of 60℃~120℃.

4. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 1, characterized in that, The first electrode is a gate line electrode; The length of the mask layer is less than the length of the first electrode in which it is located; And / or, the width of the mask layer is not equal to the width of the first electrode in which it is located; And / or, the thickness of the mask layer is 1 μm to 100 μm; And / or, the distance d between the mask layer and the edge of the first electrode is greater than 1 mm.

5. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 4, characterized in that, The mask layer is selected from at least one of alumina slurry, silica slurry, UV peelable adhesive, peelable blue adhesive, polyurethane, and silicone-modified resin.

6. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 5, characterized in that, The alumina slurry comprises alumina nanoparticles and an organic solvent, and the viscosity of the alumina slurry is 50 Pa·s to 400 Pa·s. And / or, the silica slurry comprises silica nanoparticles and an organic solvent, and the viscosity of the silica slurry is 50 Pa·s to 400 Pa·s; The organic solvent is selected from at least one of isopropanol, isobutanol, γ-valerolactone, γ-butyrolactone, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, ethylene glycol acetate, ethylene glycol butyl ether, propylene glycol phenyl ether, ethylene glycol phenyl ether, modified polyurethane, hydroxyethyl methacrylate, hexanediol diacrylate, and tripropylene glycol diacrylate.

7. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 5, characterized in that, The mask layer is a patterned mask layer; And / or, The mask layer is a patterned mask layer. The first electrode includes a soldering area and a non-soldering area, and the width d1 of the soldering area is greater than the width d2 of the non-soldering area. The patterned mask layer is located on the soldering area of ​​the first electrode.

8. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 1, characterized in that, The protective layer has at least one layer, and the material forming each layer is selected from at least one of silicon nitride, silicon oxide, and silicon oxynitride; and The thickness of the protective layer is 0.01μm to 20μm.

9. The method for manufacturing a perovskite / silicon-based tandem solar cell according to claim 1, characterized in that, In step S4, the mask layer and the protective layer located on the first electrode are removed by purging or mechanical means to obtain the perovskite / silicon-based tandem solar cell.

10. A perovskite / silicon-based tandem solar cell, characterized in that, The perovskite / silicon-based tandem solar cell is prepared by the manufacturing method of any one of claims 1 to 9.

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