Method of substrate processing

Abstract

A method of processing a substrate includes providing a substrate having a first surface and an opposite second surface. A plurality of fine holes are formed in the substrate by laser, each of the fine holes penetrating the first surface and the second surface. An etching solution is prepared. The substrate is placed on a liquid surface of the etching solution, with the second surface in contact with the liquid surface. Corresponding to each of the fine holes, the etching solution climbs and adheres to an inner wall surface of each of the fine holes, and laterally etches the inner wall surface, so as to form a micropore in each of the fine holes.

Description

Technical Field

[0001] This invention relates to a method for processing a substrate, and more particularly to a method for creating holes and filling copper in a substrate. Background Technology

[0002] With the advancement of technology, semiconductor and optoelectronic processes are evolving rapidly. The demand for extreme simplification and miniaturization has led to complex substrate fabrication techniques. For example, effectively creating multiple micro-holes on a substrate to facilitate subsequent substrate processing or packaging has become one of the key challenges that this field seeks to address. Summary of the Invention

[0003] This invention provides a method for processing a substrate, comprising: providing a substrate having a first surface and an opposing second surface; forming a plurality of micro-holes on the substrate by laser, each micro-hole penetrating the first surface and the second surface; preparing an etching solution; placing the substrate on the surface of the etching solution, with the second surface in contact with the liquid surface; corresponding to each micro-hole, the etching solution rises and adheres to the inner wall surface of each micro-hole, laterally etching the inner wall surface, thereby forming a micropore in each micro-hole.

[0004] The present invention also provides a method for processing a substrate, comprising: providing a substrate having a first surface and an opposing second surface; forming a plurality of micro-holes on the substrate by laser, each micro-hole penetrating the first surface and the second surface; preparing an etching solution; immersing a portion of the substrate in the etching solution such that the second surface is below the surface of the etching solution; corresponding to each micro-hole, the etching solution rises and adheres to the inner wall surface of each micro-hole, laterally etching the inner wall surface, thereby forming a micropore in each micro-hole.

[0005] According to a feasible implementation, the substrate processing method further includes performing a blowing step on one side of the first surface and a suction step on the other side.

[0006] According to a feasible implementation, the pore size of the micropore on the first surface is defined as a first pore size, and the pore size of the micropore on the second surface is defined as a second pore size, wherein the first pore size is greater than or equal to the second pore size. According to some embodiments, the pore size of the micropore is between 10-100 μm; the surface roughness of the inner wall of the micropore is between 10-50000 nm.

[0007] According to a feasible implementation scheme, the substrate processing method further includes: after forming micro-holes in each fine hole, placing a plurality of micro-conductive pillars into each micro-hole respectively; and applying conductive adhesive to a first surface to fill the gap between each micro-conductive pillar and the corresponding micro-hole.

[0008] According to a feasible implementation, the substrate processing method further includes performing a grinding step to grind flat at least one of the first surface and the second surface.

[0009] According to a feasible implementation, the substrate processing method further includes depositing a heat dissipation layer on a first surface or a second surface.

[0010] According to a feasible implementation scheme, the substrate is glass or diamond.

[0011] According to a feasible implementation plan, the miniature conductive pillar is a copper pillar.

[0012] According to one feasible implementation, the pores may all have the same diameter, or all of them may be different; or some may be the same and others may be different. According to some embodiments, the pore diameter is between 1 and 10 μm.

[0013] One of the beneficial effects of the present invention is that the substrate processing method provided by the present invention can effectively open multiple micropores on the substrate by means of the technical feature of "placing the substrate on the surface of the etching solution, so that the second surface is in contact with the liquid surface, and corresponding to each micropore, the etching solution climbs and adheres to the inner wall surface of each micropore, and laterally etches the inner wall surface, so that each micropore forms a micropore", which facilitates the subsequent processing of the substrate and can be applied to the fields of semiconductor technology or optoelectronic technology.

[0014] Another beneficial effect of the present invention is that the substrate processing method provided by the present invention can also effectively open multiple micropores on the substrate by means of the technical feature of "immersing a part of the substrate in an etching solution, so that the second surface is below the liquid surface of the etching solution, and corresponding to each micropore, the etching solution climbs and adheres to the inner wall surface of each micropore, and laterally etches the inner wall surface, so that each micropore forms a micropore", so as to facilitate the subsequent substrate processing technology.

[0015] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the steps in a substrate processing method according to an embodiment of the present invention.

[0017] Figure 2 for Figure 1 A schematic diagram of one step in the illustrated embodiment.

[0018] Figure 3 for Figure 1 A schematic diagram of one step in the illustrated embodiment.

[0019] Figure 4 This is a schematic diagram of the steps in a substrate processing method according to an embodiment of the present invention.

[0020] Figure 5for Figure 4 A schematic diagram of one step in the illustrated embodiment.

[0021] Figure 6 This is a schematic diagram of one step of a substrate processing method according to an embodiment of the present invention.

[0022] Figures 7A to 7C These are schematic diagrams of the micropore shape according to an embodiment of the present invention.

[0023] Figure 8 for Figure 1 A schematic diagram of one step in the illustrated embodiment.

[0024] Figure 9 for Figure 1 A schematic diagram of one step in the illustrated embodiment.

[0025] Figure 10 for Figure 1 A schematic diagram of one step in the illustrated embodiment. Detailed Implementation

[0026] The following specific embodiments illustrate the implementation of the "substrate processing method" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated beforehand. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.

[0027] Additionally, the term "or" as used in this document should be interpreted as including, depending on the context, any combination of one or more of the related listed items.

[0028] Please see Figures 1 to 3 , Figure 1 This is a schematic diagram of the steps in a method for processing substrate 1 according to an embodiment of the present invention. Figure 2 and Figure 3 They are respectively Figure 1 A schematic diagram of one step in the illustrated embodiment. The method 100 for processing substrate 1 includes at least steps S1 to S4. Step S1: Provide substrate 1, substrate 1 having a first surface 1a and an opposing second surface 1b. Step S2: Form a plurality of micro-holes 11 on substrate 1 by laser, each micro-hole 11 penetrating the first surface 1a and the second surface 1b. Step S3: Prepare etching solution 2. Step S4: Place substrate 1 on the liquid surface 21 of etching solution 2 (see...) Figure 2The second surface 1b is brought into contact with the liquid surface 21. Corresponding to each pore 11, the etching solution 2 rises and adheres to the inner wall surface 111 of each pore 11, laterally etching the inner wall surface 111, so that each pore 11 forms a micropore 12 (see...). Figure 3 The means of placing the substrate 1 on the surface 21 of the etching solution 2 is, for example, using a robotic arm or a fixed fixture (not shown), to fix the substrate 1 on the surface 21 of the etching solution 2, so that the second surface 1b contacts the surface 21 of the etching solution 2.

[0029] According to some embodiments, the pore size of the micropore 11 is between 1 and 10 μm (inclusive of any positive integer from 1 to 10 μm). According to some embodiments, the pore size of the micropore 12 is between 10 and 100 μm (inclusive of any positive integer from 10 to 100 μm). Furthermore, according to some embodiments, the surface roughness (Ra) of the inner wall surface 121 of the micropore 12 is between 10 and 50,000 nm (inclusive of any positive integer from 10 to 50,000 nm).

[0030] It should be noted that the micro-holes 11 created by laser have a specific aperture, and are not cracks. Furthermore, for the same substrate 1, the apertures of multiple micro-holes 11 may all be the same or all different. In some embodiments, the apertures of multiple micro-holes 11 are partially the same and partially different. This invention is not limited.

[0031] In some embodiments, substrate 1 is glass, or it may be a diamond substrate. In other embodiments, substrate 1 is a ceramic substrate. In still other embodiments, substrate 1 is a silicon substrate.

[0032] Please see Figure 4 and Figure 5 , Figure 4 This is a schematic diagram of the steps in a method for processing substrate 1 according to an embodiment of the present invention. Figure 5 for Figure 4 A schematic diagram of one step in the illustrated embodiment. In this embodiment, the method 200 for processing substrate 1 includes steps P1 to P4. Step P1: Provide substrate 1, which has a first surface 1a and an opposing second surface 1b. Step P2: Create a plurality of micro-holes 11 on substrate 1 using a laser, each micro-hole 11 penetrating the first surface 1a and the second surface 1b. Step P3: Prepare etching solution 2. Step P4: Immerse a portion of substrate 1 in etching solution 2, such that the second surface 1b is below the liquid surface 21 of etching solution 2. Corresponding to each micro-hole 11, etching solution 2 rises and adheres to the inner wall surface 111 of each micro-hole 11, laterally etching the inner wall surface 111 (see...). Figure 5 This creates micropores 12 in each fine pore 11. Figure 1 The difference in the embodiments shown is that, according to Figure 4In the embodiment shown, the substrate 1 is actually partially immersed in the etching solution 2. The substrate 1 is supported by buoyancy, which also allows the etching solution 2 to adhere upwards and laterally etch the inner wall surface 111 of the fine holes 11, ultimately forming micropores 12.

[0033] Please see Figure 6 This is a schematic diagram of a step in a method for processing a substrate 1 according to an embodiment of the present invention. The method for processing the substrate 1 further includes performing a blowing step on one side of the first surface 1a and a suction step on the other side. That is, when the etching solution 2 adheres and climbs and laterally etches the inner wall surface 111 of the micro-hole 11, some impurities or etching residues will be generated. By performing the aforementioned blowing step (e.g., setting a nozzle 3) and the aforementioned suction step (e.g., setting a suction nozzle 4), such impurities or etching residues can be effectively removed during the formation of the micro-holes 12, keeping the substrate 1 clean.

[0034] Please see Figures 7A to 7C These are schematic diagrams illustrating the shape of the micropores 12 according to an embodiment of the present invention. Figure 7A As shown, after processing the substrate 1 according to the present invention, the micro-holes 12 are through holes with uniform diameters (the first aperture R1 of the first surface 1a is equal to the second aperture R2 of the second surface 1b). In some embodiments, such as Figure 7B As shown, the cross-section of the micropore 12 is approximately an inverted trapezoid, and the first aperture R1 of the micropore 12 on the first surface 1a is larger than the second aperture R2 on the second surface 1b. In some embodiments, such as... Figure 7C As shown, the cross-section of the micropore 12 is roughly "Y" shaped.

[0035] It should be noted that the shape of the micropores 12 is produced by creating fine holes 11 using a laser and then laterally etching them using an etching solution 2. In other words, by controlling the shape of the fine holes 11 using a laser, the shape of the micropores 12 can be further determined, resulting in a shape similar to... Figures 7A to 7C The shape of the hole.

[0036] Please refer to the following: Figure 1 , and see Figures 8 to 10 . Figures 8 to 10 They are respectively Figure 1 A schematic diagram of one step in the illustrated embodiment. The method for processing substrate 1 further includes steps S5 to S7. After performing step S4, step S5 is performed: multiple micro-conductive pillars 5 are respectively placed into each micro-hole 12 (see...). Figure 8 For example, multiple micro-conductive pillars 5 are arranged on a carrier 6 and respectively placed into micro-pores 12. The carrier 6 is, for example, an adhesive layer or a board. When the micro-conductive pillars 5 are fixed in the micro-pores 12, they can be detached from the micro-conductive pillars 5. Step S6: Apply conductive adhesive 7 to the first surface 1a so that the conductive adhesive 7 fills the gap between each micro-conductive pillar 5 and the corresponding micro-pore 12 (see Figure 9 According to some embodiments, the conductive adhesive 7 is silver paste. According to some embodiments, the conductive adhesive 7 can be applied back and forth to coat a large area. According to other embodiments, the conductive adhesive 7 can be applied by spin coating. Further, step S7 is also performed: the method for processing the substrate 1 further includes performing a grinding step to grind flat at least one of the first surface 1a and the second surface 1b (see...). Figure 10 For example, the conductive adhesive 7 and the portion of the micro-conductive pillar 5 protruding from the surface of the substrate 1 are removed, so that the two ends of the micro-conductive pillar 5 are flush with the surface of the substrate 1 (first surface 1a and second surface 1b). The micro-conductive pillar 5 is, for example, a copper pillar.

[0037] Furthermore, in some embodiments, the user may also apply a heat dissipation layer to the first surface 1a or the second surface 1b (not shown) after step S7. The heat dissipation layer is, for example, a graphene layer.

[0038] "Beneficial effects of the embodiments"

[0039] One of the beneficial effects of the present invention is that the substrate processing method provided by the present invention can effectively open multiple micropores on the substrate by means of the technical feature of "placing the substrate on the surface of the etching solution, so that the second surface is in contact with the liquid surface, and corresponding to each micropore, the etching solution climbs and adheres to the inner wall surface of each micropore, and laterally etches the inner wall surface, so that each micropore forms a micropore", which facilitates the subsequent processing of the substrate and can be applied to the fields of semiconductor technology or optoelectronic technology.

[0040] Another beneficial effect of the present invention is that the substrate processing method provided by the present invention can also effectively open multiple micropores on the substrate by means of the technical feature of "immersing a part of the substrate in an etching solution, so that the second surface is below the liquid surface of the etching solution, and corresponding to each micropore, the etching solution climbs and adheres to the inner wall surface of each micropore, and laterally etches the inner wall surface, so that each micropore forms a micropore", so as to facilitate the subsequent substrate processing technology.

[0041] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of protection of the claims of the present invention. Therefore, all equivalent technical changes made based on the content of the present invention specification and drawings are included within the scope of protection of the claims of the present invention.

Claims

1. A method for processing a substrate, characterized in that, The method for processing the substrate includes: A substrate is provided, having a first surface and an opposing second surface; Multiple micro-holes are formed on a substrate using a laser, each of which penetrates both the first surface and the second surface; Preparation of an etching solution; and The substrate is placed on the surface of the etching solution, so that the second surface is in contact with the liquid surface. Corresponding to each of the micropores, the etching solution rises and adheres to the inner wall surface of each micropore, and laterally etches the inner wall surface, so that each micropore forms a micropore.

2. A method for processing a substrate, characterized in that, The method for processing the substrate includes: A substrate is provided, having a first surface and an opposing second surface; Multiple micro-holes are formed on a substrate using a laser, each of which penetrates both the first surface and the second surface; Preparation of an etching solution; and A portion of the substrate is immersed in the etching solution, such that the second surface is below the surface of the etching solution. Corresponding to each of the micropores, the etching solution rises and adheres to the inner wall surface of each micropore, laterally etching the inner wall surface, thereby forming a micropore in each micropore.

3. The method for processing a substrate according to claim 1 or 2, characterized in that, The substrate processing method further includes performing a blowing step on one side of the first surface and a suction step on the other side.

4. The method for processing a substrate according to claim 1 or 2, characterized in that, The pore size of the micropore is between 10-100 μm; the surface roughness of the inner wall of the micropore is between 10-50000 nm; the pore size of the micropore on the first surface is defined as a first pore size, and the pore size of the micropore on the second surface is defined as a second pore size, wherein the first pore size is greater than or equal to the second pore size.

5. The method for processing a substrate according to claim 1 or 2, characterized in that, The method for processing the substrate further includes: After forming the micropores in each of the aforementioned fine holes, a plurality of micro-conductive pillars are respectively placed into each of the aforementioned micropores; and A conductive adhesive is applied to the first surface to fill the gap between each of the micro-conductive pillars and the corresponding micropores.

6. The method for processing a substrate according to claim 5, characterized in that, The method for processing the substrate further includes performing a grinding step to grind flat at least one of the first surface and the second surface.

7. The method for processing a substrate according to claim 6, characterized in that, The method for processing the substrate further includes setting a heat dissipation layer on the first surface or the second surface.

8. The method for processing a substrate according to claim 1 or 2, characterized in that, The substrate is glass or diamond.

9. The method for processing a substrate according to claim 5, characterized in that, The micro-conductive pillar is a copper pillar.

10. The method for processing a substrate according to claim 1 or 2, characterized in that, The pores may have the same or different diameters; or some may be the same and others different; the diameter of each pore may be between 1 and 10 μm.

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