Wafer cleaning apparatus, method, and wafer processing equipment

Abstract

This application provides a wafer cleaning apparatus, method, and wafer processing equipment. The wafer cleaning apparatus includes a substrate, a cleaning chamber, a support rotation assembly, at least one electrostatic discharge (ESD) detection assembly, and at least one ESD discharge assembly. The ESD detection assembly is disposed in the cleaning chamber and is used to collect ESD parameter information in the cleaning chamber. Each ESD discharge assembly is configured to correspond one-to-one with a driven wheel. Each ESD discharge assembly is configured to be electrically connected to the metal shaft of the corresponding driven wheel when the wafer ESD voltage value and / or tank ESD voltage value meet preset conditions, so as to discharge the ESD in the cleaning chamber through an ESD discharge path. This application can perform ESD control based on two control dimensions: "controlling slow ESD release" and "ESD discharge under preset conditions," thereby achieving ESD suppression and elimination.

Description

Technical Field

[0001] This application relates to the technical field of wafer cleaning, and more specifically, to a wafer cleaning apparatus, method, and wafer processing equipment. Background Technology

[0002] In semiconductor manufacturing, packaging, and testing, wafers undergo multiple cleaning processes to remove particles, metal ions, and organic contaminants from their surfaces. During wafer cleaning, the wafer is typically placed in a cleaning chamber and rotated using support rollers or similar structures. Simultaneously, cleaning fluid is sprayed onto the wafer surface to rinse and clean it.

[0003] The inventors of this application discovered that static electricity is generated during wafer rotation cleaning, leading to static electricity accumulation within the cleaning chamber. If this static electricity cannot be released in time, localized high-potential regions may form near the wafer surface, posing risks such as contaminant adsorption, partial discharge, or arc breakdown.

[0004] The content in the background section is merely technology known to the public and does not necessarily represent existing technology in this field. Summary of the Invention

[0005] This application provides a wafer cleaning apparatus, method, and wafer processing equipment, which aims to solve at least one of the technical problems mentioned in the background art.

[0006] According to one aspect of this application, a wafer cleaning apparatus is provided, including a substrate, a cleaning chamber, a support rotation assembly, at least one electrostatic discharge (ESD) detection assembly, and at least one ESD discharge assembly. The cleaning chamber is vertically disposed on the substrate, and the wafer is disposed within the cleaning chamber. The support rotation assembly is fixedly disposed on the inner wall of the cleaning chamber, and includes at least two support wheels, each including a driving wheel and at least one driven wheel. Each driven wheel includes a rotating body and a metal shaft. The rotating body is made of antistatic modified engineering plastic filled with conductive filler. At least one ESD detection assembly is disposed within the cleaning chamber and is used to collect ESD parameter information within the cleaning chamber, including the wafer ESD voltage value and / or the tank ESD voltage value. At least one ESD discharge assembly is disposed corresponding to each driven wheel. Each ESD discharge assembly is configured to electrically connect to the metal shaft of the corresponding driven wheel when the wafer ESD voltage value and / or the tank ESD voltage value meet preset conditions, so as to discharge the static electricity within the cleaning chamber through an ESD discharge path.

[0007] According to some embodiments of this application, the cleaning chamber is made of engineering plastic, and an antistatic coating is provided on the inner wall of the cleaning chamber.

[0008] According to some embodiments of this application, the surface resistivity of the antistatic coating is 10. 6 ~10 9 Between Ω and □; and / or, the resistivity of antistatic modified engineering plastics is between 10 Ω and □. 4 ~10 7 Between Ω·cm.

[0009] According to some embodiments of this application, the electrostatic discharge assembly includes: a conductive contact unit disposed on the inner wall of the cleaning chamber and selectively electrically connected to the end face of the metal shaft of the driven wheel; a control unit electrically connected to at least one electrostatic detection component and the conductive contact unit, used to control the conductive contact unit to be electrically connected to the metal shaft when the wafer electrostatic voltage value and / or the tank electrostatic voltage value meet preset conditions; and a grounding unit disposed on the outer wall of the cleaning chamber and electrically connected to the conductive contact unit to form an electrostatic discharge path to discharge the electrostatics in the cleaning chamber through the electrostatic discharge path.

[0010] According to some embodiments of this application, the electrostatic discharge contact unit includes: a driving part electrically connected to a control unit for generating a driving force in response to control commands from the control unit; and a contact part driven by the driving part and moved to a contact position or a disconnect position under the driving force. The contact part is selectively electrically connected to the end face of a metal shaft and electrically connected to a grounding unit. In the contact position, the contact part is electrically connected to the metal shaft. In the disconnect position, there is a preset distance between the contact part and the metal shaft, and the contact part is disconnected from the metal shaft.

[0011] According to some embodiments of this application, the drive unit includes: a drive motor with an output shaft; a lead screw that is connected to the output shaft and extends in the travel direction toward the metal shaft; and a push rod that is mounted on the lead screw, with a contact portion fixedly mounted on the push rod.

[0012] According to some embodiments of this application, an electrostatic discharge (ESD) detection component is disposed on a driven wheel to collect the wafer ESD voltage value at the wafer; preset conditions include that the absolute value of the wafer ESD voltage value is greater than a first preset threshold; and / or preset conditions include that the rate of change of the absolute value of the wafer ESD voltage value is greater than a second preset threshold; and / or preset conditions include that the integral value of the absolute value of the wafer ESD voltage value within a preset time window is greater than a third preset threshold; and / or an ESD output component predicts the wafer ESD parameter prediction value after a preset time based on the historical wafer ESD voltage values ​​collected by the ESD detection component within a continuous time window; preset conditions include that the absolute value of the predicted wafer ESD parameter value is greater than a fourth preset threshold; wherein, the first preset threshold, the second preset threshold, the third preset threshold, and the fourth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the wheel.

[0013] According to some embodiments of this application, the supporting rotation assembly includes two driven wheels, a driving wheel is disposed between the two driven wheels, and at least one electrostatic discharge (ESD) detection assembly includes: a first ESD detection assembly disposed at the first driven wheel to collect a first wafer ESD voltage value at a first wafer position; a second ESD detection assembly disposed at the second driven wheel to collect a second wafer ESD voltage value at a second wafer position; preset conditions include the difference between the absolute value of the first wafer ESD voltage value and the absolute value of the second wafer ESD voltage value being greater than a fifth preset threshold; and / or, the absolute value of the first wafer ESD voltage value being greater than a first preset threshold; and / or, the absolute value of the second wafer ESD voltage value being greater than a first preset threshold; and in the case where the absolute value of the first wafer ESD voltage value is greater than the first preset threshold. The electrostatic discharge component is electrically connected to the metal shaft of the corresponding first driven wheel; and / or, when the absolute value of the electrostatic voltage value of the second wafer is greater than a first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel; and / or, when the difference between the absolute value of the electrostatic voltage value of the first wafer and the absolute value of the electrostatic voltage value of the second wafer is greater than a fifth preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding first driven wheel, or the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel, or at least one electrostatic discharge component is electrically connected to both the metal shaft of the corresponding first driven wheel and the metal shaft of the second driven wheel; wherein, the fifth preset threshold is set according to the resistivity of the antistatic coating and / or the wheel body.

[0014] According to some embodiments of this application, an electrostatic detection component is disposed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber. An electrostatic discharge component determines the wafer electrostatic voltage value based on the tank electrostatic voltage value. Preset conditions include that the absolute value of the wafer electrostatic voltage value is greater than a first preset threshold; and / or preset conditions include that the rate of change of the absolute value of the wafer electrostatic voltage value is greater than a second preset threshold; and / or preset conditions include that the integral value of the absolute value of the wafer electrostatic voltage value within a preset time window is greater than a third preset threshold; and / or the electrostatic discharge component determines the historical wafer electrostatic voltage value based on the historical tank electrostatic voltage values ​​collected by the electrostatic detection component within a continuous time window, so as to predict the wafer electrostatic parameter prediction value after a preset time based on the historical wafer electrostatic voltage value; preset conditions include that the absolute value of the predicted wafer electrostatic parameter value is greater than a fourth preset threshold; wherein, the first preset threshold, the second preset threshold, the third preset threshold, and the fourth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the rotor.

[0015] According to some embodiments of this application, the electrostatic discharge component determines the wafer electrostatic voltage value based on a preset compensation model according to the electrostatic voltage value of the tank and the material parameter value of the antistatic coating. The material parameter value includes at least one or more of the surface resistivity, thickness, and surface area of ​​the antistatic coating and the conductivity of the cleaning solution; or the electrostatic discharge component determines the wafer electrostatic voltage value based on preset calibration data of the electrostatic voltage value of the tank and the electrostatic voltage value of the wafer.

[0016] According to some embodiments of this application, at least one electrostatic detection component includes: a first electrostatic detection component disposed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber; a second electrostatic detection component disposed on the driven wheel to collect the second wafer electrostatic voltage value on the driven wheel; an electrostatic discharge component to determine the first wafer electrostatic voltage value based on the tank electrostatic voltage value; preset conditions include the difference between the absolute value of the first wafer electrostatic voltage value and the absolute value of the second wafer electrostatic voltage value being greater than a fifth preset threshold; and / or, the absolute value of the first wafer electrostatic voltage value being greater than a first preset threshold; and / or, the absolute value of the second wafer electrostatic voltage value being greater than a first preset threshold; wherein, the fifth preset threshold is set according to the resistivity of the antistatic coating and / or the main body of the wheel.

[0017] According to some embodiments of this application, the width of the cleaning chamber ranges from 90 mm to 110 mm.

[0018] According to some embodiments of this application, the antistatic coating includes a transparent conductive material and a resin material.

[0019] According to some embodiments of this application, the antistatic coating has a preset thickness, which ranges from 3μm to 5μm.

[0020] According to another aspect of this application, a wafer cleaning method is also provided, which is performed based on the wafer cleaning apparatus described above. The wafer cleaning method includes: acquiring electrostatic parameter information in the cleaning chamber, the electrostatic parameter information including the wafer electrostatic voltage value and / or the tank electrostatic voltage value; and, when the wafer electrostatic voltage value and / or the tank electrostatic voltage value meet preset conditions, controlling the electrostatic discharge component to be conductively connected to the metal shaft of the corresponding driven wheel, so as to discharge the static electricity in the cleaning chamber through the electrostatic discharge path.

[0021] According to some embodiments of this application, an electrostatic discharge (ESD) detection component is mounted on a driven wheel to collect the ESD voltage value at the wafer. When the wafer ESD voltage value and / or the tank ESD voltage value meet preset conditions, the ESD discharge component is electrically connected to the metal shaft of the corresponding driven wheel. This includes: controlling the ESD discharge component to be electrically connected to the metal shaft when the absolute value of the wafer ESD voltage value is greater than a first preset threshold; and / or controlling the ESD discharge component to be electrically connected to the metal shaft when the rate of change of the absolute value of the wafer ESD voltage value is greater than a second preset threshold; and / or controlling the ESD discharge component to be electrically connected when the absolute value of the wafer ESD voltage value is within a preset threshold. If the integral value within the time window is greater than the third preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or based on the historical wafer electrostatic voltage values ​​collected by the electrostatic detection component within a continuous time window, the predicted wafer electrostatic parameters after a preset time are predicted, and if the absolute value of the predicted wafer electrostatic parameters is greater than the fourth preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; wherein, an antistatic coating is provided on the inner wall of the cleaning chamber, and the first, second, third, and fourth preset thresholds are set according to the resistivity of the antistatic coating and / or the rotor body.

[0022] According to some embodiments of this application, the supporting rotation assembly includes two driven wheels, with a driving wheel disposed between the two driven wheels. At least one electrostatic discharge (ESD) detection assembly includes: a first ESD detection assembly disposed at the first driven wheel to collect a first wafer ESD voltage value at a first wafer position; and a second ESD detection assembly disposed at the second driven wheel to collect a second wafer ESD voltage value at a second wafer position. When the wafer ESD voltage value and / or the tank ESD voltage value meet preset conditions, the ESD discharge assembly is controlled to electrically connect with the metal shaft of the corresponding driven wheel, including: when the absolute value of the first wafer ESD voltage value is greater than a first preset threshold, the ESD discharge assembly is controlled to electrically connect with the metal shaft of the corresponding first driven wheel; and / or... When the absolute value of the electrostatic voltage of the second wafer is greater than the first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel; and / or, when the difference between the absolute values ​​of the first and second wafer electrostatic voltages is greater than the fifth preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding first driven wheel, or the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel, or the electrostatic discharge component is electrically connected to both the metal shafts of the first and second driven wheels; wherein, an antistatic coating is provided on the inner wall of the cleaning chamber, and the fifth preset threshold is set according to the resistivity of the antistatic coating and / or the wheel body.

[0023] According to some embodiments of this application, an electrostatic discharge (ESD) detection component is disposed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber; when the wafer ESD value and / or the tank ESD value meet preset conditions, the ESD discharge component is controlled to electrically connect with the metal shaft of the corresponding driven wheel, including: determining the wafer ESD value based on the tank ESD value; when the absolute value of the wafer ESD value is greater than a first preset threshold, controlling the ESD discharge component to electrically connect with the metal shaft; and / or when the rate of change of the absolute value of the wafer ESD value is greater than a second preset threshold, controlling the ESD discharge component to electrically connect with the metal shaft; and / or when the rate of change of the absolute value of the wafer ESD value is greater than a second preset threshold, controlling the ESD discharge component to electrically connect with the metal shaft; and / or when the absolute value of the wafer ESD value is greater than a second preset threshold, controlling the rate of change of the absolute value of the wafer ESD value is greater than a second preset threshold; and / or when the rate of change of the absolute value of the wafer ESD value is greater than a second preset threshold, controlling ... If the integral value within the time window is greater than the third preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or based on the historical tank electrostatic voltage value collected by the electrostatic detection component within the continuous time window, the historical wafer electrostatic voltage value is determined, so as to predict the wafer electrostatic parameter prediction value after a preset time based on the historical wafer electrostatic voltage value; if the absolute value of the wafer electrostatic parameter prediction value is greater than the fourth preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; wherein, an antistatic coating is provided on the inner wall of the cleaning chamber, and the first preset threshold, the second preset threshold, the third preset threshold, and the fourth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the wheel.

[0024] According to some embodiments of this application, an antistatic coating is provided on the inner wall of the cleaning chamber. Determining the wafer electrostatic voltage value based on the tank electrostatic voltage value includes: determining the wafer electrostatic voltage value based on a preset compensation model according to the tank electrostatic voltage value and the material parameter value of the antistatic coating, wherein the material parameter value includes at least one or more of the surface resistivity, thickness, surface area of ​​the antistatic coating and the conductivity of the cleaning fluid; or determining the wafer electrostatic voltage value based on preset calibration data of the tank electrostatic voltage value and the wafer electrostatic voltage value.

[0025] According to some embodiments of this application, at least one electrostatic discharge (ESD) detection component includes: a first ESD detection component disposed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber; a second ESD detection component disposed on the driven wheel to collect the second wafer ESD value on the driven wheel; when the wafer ESD value and / or the tank ESD value meet preset conditions, controlling the ESD discharge component to electrically connect with the metal shaft of the corresponding driven wheel includes: determining the first wafer ESD value based on the tank ESD value; controlling the ESD discharge component to electrically connect with the metal shaft when the difference between the absolute value of the first wafer ESD value and the absolute value of the second wafer ESD value is greater than a fifth preset threshold; and / or, controlling the ESD discharge component to electrically connect with the metal shaft when the absolute value of the first wafer ESD value is greater than the first preset threshold; and / or, controlling the ESD discharge component to electrically connect with the metal shaft when the absolute value of the second wafer ESD value is greater than the first preset threshold; wherein, an antistatic coating is provided on the inner wall of the cleaning chamber, and the fifth preset threshold is set according to the resistivity of the antistatic coating and / or the main body of the wheel.

[0026] According to another aspect of this application, a wafer processing apparatus is also provided. This wafer processing apparatus includes the wafer cleaning apparatus as described above.

[0027] Beneficial effects On the one hand, this application uses antistatic modified engineering plastic for the main body of the driven wheel. Based on the conductivity of antistatic modified engineering plastic, which lies between conductor and insulator, it can not only promptly discharge static electricity to reduce the risk of accumulation, but also ensure a continuous and uniform slow-release characteristic during charge discharge. This "smoothed" voltage change effectively avoids interference from voltage surges in the detection signal, guaranteeing the stability of electrostatic detection data and the reliability of the control response. On the other hand, this application installs an electrostatic detection component in the cleaning chamber and controls the selective electrical connection between the electrostatic discharge component and the corresponding metal shaft based on electrostatic parameter information, enabling static electricity within the cleaning chamber to be discharged through the electrostatic discharge path when preset conditions are met.

[0028] This application avoids both long-term static electricity accumulation and the formation of unnecessary continuous conductive paths due to continuous contact between the static electricity discharge component and the metal shaft, thereby reducing the risk of current surges during wafer cleaning. This application enables holistic static electricity control based on two dimensions: "controlling the slow release of static electricity" and "static electricity discharge under preset conditions," thus achieving the suppression and elimination of static electricity. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This diagram shows a schematic representation of the wafer cleaning apparatus according to an embodiment of this application. Figure 2 A side view of the cleaning chamber according to an embodiment of this application is shown; Figure 3 A schematic diagram illustrating the principle of static electricity elimination according to an embodiment of this application is shown; Figure 4 This invention provides a schematic diagram of the support wheel structure according to an embodiment of the present application. Figure 5 This invention provides a schematic diagram of the structure of the driving component according to an embodiment of the present application. Figure 6 Another schematic diagram of a wafer cleaning apparatus according to an embodiment of this application is shown; Figure 7 A schematic flowchart of a wafer cleaning method according to an embodiment of this application is shown.

[0031] Explanation of reference numerals in the attached figures: Substrate 10; Cleaning chamber 20; Wafer 30; Support rotation assembly 40; Drive assembly 50; Spraying assembly 60; Electrostatic detection assembly 70; Electrostatic discharge assembly 80; Top cover 90; 21. Antistatic coating; 22. Antistatic lining board; Driven wheel 41; Driven wheel 42; Rotary wheel body 421; Metal rotating shaft 422; Motor mount 51; Motor 52; Drive pulley 53; Driven pulley 54; Transmission belt 55; Mounting base 61; spray boom 62; spray head 63; First opening 91; second opening 92. Detailed Implementation

[0032] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this application will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted.

[0033] The described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a full understanding of embodiments of this disclosure. However, those skilled in the art will recognize that the technical solutions of this disclosure can be practiced without one or more of these specific details, or other methods, components, materials, devices, etc. In these cases, well-known structures, methods, devices, implementations, materials, or operations will not be shown or described in detail.

[0034] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such process, method, product, or apparatus.

[0035] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order.

[0036] The technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0037] According to one aspect of this application, a wafer cleaning apparatus is provided. Figure 1 A schematic diagram of the structure of a wafer cleaning apparatus according to an embodiment of this application is shown.

[0038] According to the example embodiment, such as Figure 1 As shown, the wafer cleaning apparatus includes a substrate 10, a cleaning chamber 20, a support rotation assembly 40, a drive assembly 50, a spraying assembly 60, at least one electrostatic detection assembly 70, and at least one electrostatic discharge assembly 80.

[0039] According to the example embodiment, such as Figure 1 As shown, the cleaning chamber 20 is vertically disposed on the substrate 10, and the wafer 30 is disposed in the cleaning chamber 20.

[0040] For example, the substrate 10 is used to support the cleaning chamber 20 and the driving, grounding and control structures associated with the cleaning chamber 20. Exemplarily, the height direction of the cleaning chamber 20 is approximately perpendicular to the plane of the substrate 10, the cleaning chamber 20 can be a long groove structure, and the wafer 30 can be supported in the cleaning chamber 20 in a vertical or near-vertical orientation.

[0041] According to the example embodiment, such as Figure 1 As shown, the support rotation assembly 40 is fixedly mounted on the inner wall of the cleaning chamber 20 to support the wafer 30. The support rotation assembly 40 includes at least two support wheels, which include a driving wheel 41 and at least one driven wheel 42 (e.g., ...). Figure 1 As shown, it includes two driven wheels 42). Figure 4 As shown, each driven wheel 42 includes a wheel body 421 and a metal shaft 422.

[0042] For example, the drive wheel 41 can rotate under the drive of the drive assembly 50, and drive the wafer 30 to rotate through contact with the edge of the wafer 30. The driven wheel 42 is used to provide auxiliary support for the wafer 30 and rotates with the wafer 30.

[0043] According to the example embodiment, the material of the rotor body 421 is an antistatic modified engineering plastic filled with conductive filler.

[0044] For example, antistatic modified engineering plastics are plastic materials that use engineering plastics (such as polyetheretherketone, polyamide, polyoxymethylene, polyphenylene sulfide, etc.) as the matrix and are melt-blended and modified by filling with conductive fillers (such as conductive carbon black, carbon nanotubes, graphene, metal oxide powder or other fillers that can reduce the surface resistance of the material) to reduce their volume resistivity or surface resistivity to the level of antistatic properties.

[0045] For example, the antistatic modified engineering plastic can be a polyphenylene sulfide (PPS) composite material with antistatic properties.

[0046] For example, such as Figure 4 As shown, the metal shaft 422 of the driven wheel 42 is positioned axially on the wheel body 421 of the driven wheel 42 and is connected to the wheel body 421. The metal shaft 422 can be made of stainless steel, titanium alloy, or other corrosion-resistant metal materials. Due to the good conductivity of the metal shaft 422, static electricity on the wafer 30 can enter the static discharge path through the metal shaft 422 (for example, when the static discharge assembly 80 is electrically connected to the metal shaft 422 of the driven wheel 42, static electricity on the wafer 30 can enter the static discharge path through the metal shaft 422).

[0047] According to the example embodiment, such as Figure 1 As shown, the driving component 50 is connected to the supporting rotation component 40 and is used to drive the supporting rotation component 40 to rotate, thereby causing the wafer 30 to rotate. Figure 1 As shown, the spraying assembly 60 is located at the end of the cleaning chamber 20 away from the substrate 10, and is used to release cleaning fluid to the wafer 30.

[0048] For example, the cleaning solution can be deionized water, chemical cleaning solution, rinsing solution, or other liquids suitable for cleaning wafer 30.

[0049] According to the example embodiment, such as Figure 1 As shown, at least one electrostatic detection component 70 is disposed in the cleaning chamber 20 for collecting electrostatic parameter information in the cleaning chamber 20, including wafer electrostatic voltage value and / or tank electrostatic voltage value.

[0050] For example, the electrostatic detection component 70 can be an electrostatic sensor, an electric field sensor, or an electrostatic voltage detector. The electrostatic detection component 70 can be mounted on the driven wheel 42 to detect the electrostatic state of the area surrounding the wafer 30, thereby obtaining the wafer electrostatic voltage value at the wafer 30. Alternatively, the electrostatic detection component 70 can be mounted on the inner wall of the cleaning chamber 20 to detect the electrostatic state of the inner wall of the cleaning chamber 20 and the cleaning fluid spray area, thereby obtaining the tank electrostatic voltage value.

[0051] According to the example embodiment, such as Figure 1 As shown, the electrostatic discharge components 80 are arranged in a one-to-one correspondence with the driven wheels 42. Each electrostatic discharge component 80 is configured to be electrically connected to the metal shaft 422 of the corresponding driven wheel 42 when the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meets preset conditions, so as to discharge the static electricity in the cleaning chamber 20 through the electrostatic discharge path.

[0052] For example, this application sets the electrostatic discharge component 80 and the driven wheel 42 in a one-to-one correspondence, so that the electrostatic discharge component 80 can perform electrostatic discharge, thereby improving the electrostatic control efficiency during the cleaning process.

[0053] The electrostatic discharge assembly 80 is disposed in the cleaning chamber 20 and can be selectively electrically connected to the end face of the metal shaft 422. For example, the electrostatic discharge assembly 80 can be electrically connected to the corresponding metal shaft 422, or it can be electrically disconnected from the corresponding metal shaft 422 while maintaining a distance from it.

[0054] For example, during the cleaning process of wafer 30, the electrostatic discharge (ESD) detection component 70 continuously or intermittently collects ESD parameter information. If the ESD parameter information does not meet preset conditions, the ESD discharge component 80 does not contact the corresponding metal shaft 422, thereby preventing the formation of a continuous conductive path during the cleaning process. If the ESD parameter information meets the preset conditions, the ESD discharge component 80 can contact the corresponding metal shaft 422. At this time, the static electricity in the cleaning chamber 20 can be discharged through the ESD discharge path of the ESD discharge component 80.

[0055] It is understandable that during the cleaning process of wafer 30, the main sources of static electricity include: friction between the wafer 30 and the contact point when they rotate relative to each other with the supporting rotating assembly 40; friction between the water and the inner wall of the nozzle when the cleaning fluid is sprayed through the nozzle; and friction between the cleaning fluid and the inner wall of the cleaning chamber 20 when it flows. The static electricity generated by these frictions accumulates to a certain extent within the cleaning chamber 20.

[0056] Through the above embodiments, on the one hand, by using antistatic modified engineering plastic material for the main body 421 of the driven wheel 42, this application leverages the conductive properties of antistatic modified engineering plastic, which lie between conductors and insulators. This not only allows for the timely discharge of static electricity from friction to reduce the risk of accumulation but also enables the charge discharge process to exhibit a continuous and uniform slow-release characteristic. This "smoothed" voltage change effectively avoids interference from voltage surges on the detection signal, ensuring the stability of electrostatic detection data and the reliability of control response. On the other hand, by setting an electrostatic detection component 70 in the cleaning chamber 20 and controlling the selective electrical connection between the electrostatic discharge component 80 and the corresponding metal shaft 422 based on electrostatic parameter information, this application ensures that static electricity within the cleaning chamber 20 can be discharged through the electrostatic discharge path when preset conditions are met.

[0057] This application avoids both long-term static electricity accumulation and the formation of an unnecessary continuous conductive path due to continuous contact between the static electricity discharge component 80 and the metal shaft 422, thereby reducing the risk of current surges to the wafer 30 during the cleaning process. This application enables holistic static electricity control based on two control dimensions: "controlling the slow release of static electricity" and "static electricity discharge under preset conditions," thus achieving the suppression and elimination of static electricity.

[0058] Optionally, the cleaning chamber 20 is made of engineering plastic. For example... Figure 2 As shown, an antistatic coating 21 is provided on the inner wall of the cleaning chamber 20.

[0059] For example, the engineering plastic includes, but is not limited to, polyvinyl chloride, polypropylene, polyetheretherketone, polytetrafluoroethylene, polyvinylidene fluoride, or other corrosion-resistant plastic materials suitable for semiconductor cleaning environments. The antistatic coating 21 is a coating with suitable conductivity that can form a functional interface with charge-releasing properties on the inner wall of the cleaning chamber 20.

[0060] It is understandable that if the inner wall of the cleaning chamber 20 is made of an insulating material, the surface will generate an electric charge due to friction, and this charge cannot be eliminated. When this charge accumulates to a certain amount, the contaminants washed off the surface of the wafer 30 by the cleaning fluid will form a conductive medium, thereby generating an electric arc that breaks down the surface of the wafer 30.

[0061] The antistatic coating 21 used in this application has a lower resistivity than the insulator. The antistatic coating 21 can reduce the surface resistance of the inner wall of the cleaning chamber 20, which makes the charge movement on the inner wall surface of the cleaning chamber 20 slower and more controllable. It can continuously and slowly discharge the charge, so that the static electricity generated or adsorbed on the inner wall of the cleaning chamber 20 can be more easily diffused and released evenly, thus avoiding the generation of a large static voltage difference.

[0062] On the one hand, this application employs a cleaning chamber 20 with an antistatic coating 21 and a support and rotation assembly 40 made of antistatic modified engineering plastic material. During the process of the wafer 30 being placed inside the cleaning chamber 20 and rotating while the spray assembly 60 sprays deionized water, further accumulation and increase of charge can be effectively suppressed. The charge inherent in the wafer 30 itself can be at least partially discharged through the support and rotation assembly 40. Simultaneously, the static electricity generated by friction between the cleaning fluid and the inner wall of the cleaning chamber 20 can be reduced due to the antistatic properties of the antistatic modified engineering plastic material.

[0063] This application utilizes the synergistic effect of the antistatic coating 21 and the antistatic modified engineering plastic material to stabilize and control the voltage inside the cleaning chamber 20 and on the surface of the wafer 30 within an acceptable range. This ensures that a large potential difference sufficient to generate an arc discharge cannot be formed between the wafer 30 and adjacent components, thereby avoiding electrical breakdown or damage to the wafer 30 caused by electrostatic discharge and improving the reliability and yield of wafer 30 processing.

[0064] On the other hand, this application provides an electrostatic detection component 70 in the cleaning chamber 20 and controls the selective electrical connection between the electrostatic discharge component 80 and the corresponding metal shaft 422 according to the electrostatic parameter information, so that the static electricity in the cleaning chamber 20 can be discharged through the electrostatic discharge path when the preset conditions are met.

[0065] This application avoids both long-term static electricity accumulation and the formation of an unnecessary continuous conductive path due to continuous contact between the static electricity discharge component 80 and the metal shaft 422, thereby reducing the risk of current surges to the wafer 30 during the cleaning process. This application enables holistic static electricity control based on two control dimensions: "controlling the slow release of static electricity" and "static electricity discharge under preset conditions," thus achieving the suppression and elimination of static electricity.

[0066] In this application, the antistatic coating 21 and the antistatic modified engineering plastic can serve as passive slow-release layers. By controlling the resistivity of the materials, the electrostatic potential is continuously maintained below a safe threshold during the normal wafer cleaning process. This configuration not only reduces the degree of electrostatic accumulation from the source and decreases the triggering frequency of the active conduction mechanism, but also provides a relatively stable detection environment for the electrostatic detection component 70, ensuring the accuracy and reliability of the detection data. Furthermore, the electrostatic detection component 70 and the electrostatic discharge component 80, acting as active fast-discharge layers, only briefly establish a low-impedance discharge path under abnormal operating conditions where the electrostatic parameters meet preset conditions. This keeps the grounding conduction time within a negligible range for electrochemical corrosion, effectively avoiding side effects such as electrochemical corrosion of metal components caused by continuous grounding.

[0067] Therefore, the passive slow-release layer can maintain the system potential at a low level under most operating conditions through electrostatic discharge under normal conditions, so that the electrostatic discharge component 80 is only triggered under extreme or abnormal conditions, avoiding the risk of corrosion accumulation caused by frequent conduction. The active fast-discharge layer, on the other hand, provides a rapid and efficient discharge channel when the passive slow-release layer is insufficient to cope with sudden or high-intensity electrostatic accumulation, providing reliable safety assurance for the cleaning process. This application, through the synergistic combination of passive slow-release and active fast-discharge, has the characteristics of simultaneously ensuring the timeliness, effectiveness, and long-term reliability of electrostatic protection.

[0068] It is understandable that the existing technology of using the metal shaft of the support wheel as a static electricity discharge point still has at least the following technical problems: 1. Risk of arc breakdown exists: The direct grounding of the metal shaft 422 will make it the fixed low potential point with the lowest potential in the cleaning chamber 20. According to the principle of minimum energy path of arc discharge, the arc will preferentially break down from the wafer surface to the grounded metal shaft 422 (which forms a low impedance path), which will induce the risk of arc breakdown of wafer 30.

[0069] 2. Risk of electrochemical corrosion exists: The cleaning solution for wafer 30 can be considered an electrolyte solution. When the metal shaft 422 is permanently grounded, it will form a closed electrochemical galvanic cell with a dissimilar metal (such as a grounding wire) in the electrolyte, causing continuous electrochemical corrosion of the metal shaft 422. Furthermore, corrosion products (such as metal ions) will contaminate the cleaning solution and be adsorbed onto the wafer surface, causing device performance degradation or scrapping.

[0070] This application, through the structural design of the electrostatic discharge component 80, employs a controllable conduction method, which can briefly establish a discharge path only under certain preset conditions, thereby avoiding arc-induced problems. Furthermore, the conduction time can be controlled within a range negligible for electrochemical corrosion, thus also avoiding corrosion contamination problems.

[0071] Optionally, the surface resistivity of the antistatic coating 21 is 10. 6 ~10 9 Between Ω and □.

[0072] For example, the surface resistivity of the antistatic coating 21 is configured to be 10. 6 ~10 9 Ω / □. This setting limits the resistivity of the antistatic coating 21 to the "slow-release" range rather than the "fast-discharge" range. Placing the antistatic coating 21 on the inner wall of the cleaning chamber 20 allows for controlled discharge of charge generated during the wafer 30 cleaning process through its appropriate conductivity, preventing excessive charge accumulation. Furthermore, the limitation of this surface resistivity range ensures continuous and uniform slow-release characteristics for charge conduction and release, creating favorable detection conditions for accurate sampling by the electrostatic detection component 70.

[0073] It is understandable here that if the resistivity of the antistatic coating 21 is too low (e.g., below 10), 6 If the charge discharge rate is too fast (Ω / □), it is equivalent to forming a near-short-circuit fixed grounding point on the inner wall of the cleaning chamber 20. The electrostatic voltage decays rapidly before it can be effectively collected by the electrostatic detection component 70, causing the detection system to be unable to respond in time and thus unable to detect the true extent of electrostatic accumulation. If the resistivity of the antistatic coating 21 is too high (e.g., above 10 Ω / □), 9 If the charge is less than Ω / □, then the charge can hardly be discharged. The inner wall of the cleaning chamber 20 is equivalent to a pure insulator. Although the electrostatic detection component 70 can sensitively detect the increase in electrostatic voltage, the cleaning chamber 20 itself lacks any self-protection capability. Once the static electricity accumulation exceeds the tolerance limit, the wafer 30 still faces the risk of electrostatic discharge damage or particle adsorption.

[0074] This application limits the resistivity of the antistatic coating 21 to 10. 6 ~10 9 Within the Ω / □ range, the time constant of charge dissipation is typically in the millisecond to second range, while the characteristic time of electrostatic accumulation during wafer 30 cleaning (i.e., the triboelectric rate and the charging rate of the cleaning fluid) is also in the millisecond to second range. Since both are on the same order of magnitude, the rise curve of the electrostatic voltage exhibits a "slow and smooth" gradual change, rather than a "sudden spike" type of drastic jump. Simultaneously, the sampling period of the electrostatic detection component 70 is typically 10ms to 100ms, which can fully track the changing trend of the electrostatic voltage. This provides sufficient data acquisition window and processing time for comprehensive judgment based on electrostatic parameter information, thereby improving the response reliability and judgment accuracy of the detection and control strategy.

[0075] Optionally, the resistivity of the antistatic modified engineering plastic is 10. 4 ~10 7 Between Ω·cm.

[0076] For example, the resistivity (such as volume resistivity) of antistatic modified engineering plastic materials is configured to be 10. 4 ~10 7 Ω·cm.

[0077] Based on the differences in the electrostatic generation mechanism of different parts during the wafer 30 cleaning process, it can be seen that the main body 421 of the driven wheel 42 is in direct contact with the wafer 30 and rubs at high speed, which is the main source of charge generation. By configuring the lower resistivity of the main body 421 of the driven wheel 42, the charge can be quickly discharged along the metal shaft 422 after it is generated, which can effectively avoid the formation of local high potential areas at the contact interface and reduce the risk of electrostatic accumulation from the source.

[0078] This application uses an antistatic modified engineering plastic material for the rotor body 421. Its resistivity can be configured to form a gradually changing resistive-capacitive coupling between the wafer 30 and the metal shaft 422, rather than instantaneous conduction. This resistive-capacitive time constant is on the same order of magnitude as the charge discharge time constant of the antistatic coating 21, also in the millisecond to second range. This allows the electrostatic detection component 70, located at the driven wheel 42, to effectively track the gradual change in the edge potential of the wafer 30. Through the synergistic cooperation of the antistatic coating 21 and the antistatic modified engineering plastic, this application forms a unified passive slow-release system at the material level. This system can smooth out electrostatic voltage spikes under most operating conditions into a controllable voltage ramp, avoiding interference from voltage surges in the detection signal and improving the reliability and execution accuracy of the judgment strategy based on the rate of change and trend prediction. This achieves effective electrostatic protection while ensuring the overall reliability of the detection and control system.

[0079] The resistivity of the rotor body 421 of the driven wheel 42 is configured to be higher than 10. 4 The resistivity of the electrostatic discharge (ESD) is Ω·cm, which allows the charge discharge process to maintain a controllable, slow-release characteristic, preventing the ESD detection component 70 from failing to effectively collect voltage change signals due to excessively rapid discharge. By using a graded configuration of the resistivity of the antistatic modified engineering plastic material and the antistatic coating 21, a faster discharge rate can be achieved at the charge generation source, while maintaining a slower discharge rate on the inner wall of the cleaning chamber 20. This balances the dual requirements of rapid elimination at the source and overall stable and controllable operation, forming a gradient ESD protection system from local to overall, thereby further improving the efficiency of ESD protection and the reliability of the detection system.

[0080] Optionally, each electrostatic discharge assembly 80 includes a conductive contact unit, a control unit, and a grounding unit. The conductive contact unit is disposed on the inner wall of the cleaning chamber 20 and is selectively electrically connected to the end face of the metal shaft 422 of the driven wheel 42.

[0081] For example, the electrostatic discharge contact unit can be electrically connected to the metal shaft 422 of the driven wheel 42 under the control of the control unit, or it can be electrically disconnected from the metal shaft 422 of the driven wheel 42 while maintaining a distance from it.

[0082] The control unit is electrically connected to the electrostatic detection component 70 and the conductive contact unit, and is used to control the conductive contact unit to be electrically connected to the metal shaft 422 when the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meets preset conditions. The grounding unit is set on the outer wall of the cleaning chamber 20 and is electrically connected to the conductive contact unit to form an electrostatic discharge path to discharge the static electricity in the cleaning chamber 20 through the electrostatic discharge path.

[0083] For example, one end of the electrostatic discharge contact unit is positioned facing the metal shaft 422 of the driven wheel 42, and the other end is electrically connected to the grounding unit. When the electrostatic discharge contact unit contacts the metal shaft 422 of the driven wheel 42, the static electricity in the corresponding area of ​​the driven wheel 42 can be transferred to the grounding unit through the electrostatic discharge contact unit, thereby achieving static discharge.

[0084] For example, during the cleaning process of wafer 30, the electrostatic discharge (ESD) detection component 70 continuously or intermittently collects ESD parameter information and sends the collected ESD parameter information to the control unit. When the control unit determines that the ESD parameter information does not meet the preset conditions, it controls the conductive contact unit to remain in the open state, preventing the conductive contact unit from contacting the metal shaft 422 of the driven wheel 42, thereby avoiding the formation of a continuous conductive path during the cleaning process. When the control unit determines that the ESD parameter information meets the preset conditions, the control unit outputs a control command to the conductive contact unit, enabling the conductive contact unit to contact the metal shaft 422 of the driven wheel 42. At this time, the static electricity in the cleaning chamber 20 can be discharged through the static discharge path formed by the metal shaft 422 of the driven wheel 42, the conductive contact unit, and the grounding unit.

[0085] Optionally, the electrostatic discharge contact unit includes a drive unit and a contact unit. The drive unit is electrically connected to the control unit and generates driving force in response to control commands from the control unit. The contact unit is disposed on the drive unit, is drive-connected to the drive unit, and moves to a contact position or a disconnect position under the driving force. The contact unit selectively contacts the end face of the metal shaft 422 of the driven wheel 42 and is electrically connected to the grounding unit.

[0086] In the contact position, the contact portion is electrically connected to the metal shaft 422 of the driven wheel 42. The contact portion includes, but is not limited to, a conductive metal sheet, a conductive spring, a conductive pin, a carbon brush, or other structures with conductive capabilities suitable for contacting the end face of the metal shaft 422 of the driven wheel 42. In the disconnected position, a predetermined distance exists between the contact portion and the metal shaft 422 of the driven wheel 42, and the contact portion is disconnected from the metal shaft 422. This predetermined distance prevents accidental contact caused by vibration, liquid impact, or rotation of the support wheel.

[0087] Optionally, the drive unit includes a drive motor, a lead screw, and a push rod. The drive motor is provided with an output shaft. The lead screw is drivenly connected to the output shaft and extends in the travel direction toward the metal shaft 422 of the driven wheel 42. The push rod is mounted on the lead screw, and a contact portion is fixedly mounted on the push rod.

[0088] For example, when the control unit determines that static electricity needs to be discharged, it outputs a positive drive signal to the drive motor. The drive motor drives the lead screw to rotate, and the lead screw drives the push rod to move in the direction toward the metal shaft 422 of the driven wheel 42. The push rod further drives the contact part to the contact position, so that the contact part is electrically connected to the end face of the metal shaft 422 of the driven wheel 42. When the static electricity parameter drops to a safe range, the control unit outputs a reverse drive signal to the drive motor. The drive motor drives the lead screw to rotate in the opposite direction, so that the push rod drives the contact part away from the metal shaft 422 of the driven wheel 42 and moves it to the disconnect position.

[0089] Through the above embodiments, the electrostatic discharge contact unit can achieve connection and disconnection with the metal shaft 422 of the driven wheel 42 through mechanical movement, featuring simple structure and reliable control. The transmission method of the lead screw and push rod has good position holding capability, which can prevent the contact part from undergoing unexpected displacement under the impact of cleaning fluid or equipment vibration.

[0090] Optionally, the electrostatic discharge (ESD) detection component 70 is mounted on the driven wheel 42 to collect the ESD voltage value at the wafer 30. Preset conditions may include the absolute value of the ESD voltage value being greater than a first preset threshold.

[0091] For example, the first preset threshold can be preset according to the wafer type, cleaning fluid type, cleaning chamber material, and process safety requirements. When the absolute value of the wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component 80 is connected to the metal shaft 422 of the driven wheel 42 to reduce the electrostatic voltage in the cleaning chamber 20.

[0092] Optionally, the preset conditions may include a rate of change of the absolute value of the wafer electrostatic voltage value that is greater than a second preset threshold.

[0093] For example, the second preset threshold can be preset according to the wafer type, cleaning fluid type, cleaning chamber material, and process safety requirements. The rate of change of the absolute value of the wafer electrostatic voltage can be calculated based on continuously sampled wafer electrostatic voltage values. For example, if the wafer electrostatic voltage rises rapidly in a short period of time, even if the absolute value of the wafer electrostatic voltage has not yet exceeded the first preset threshold, it may indicate that a high electrostatic risk is about to occur in the cleaning chamber 20. Therefore, the electrostatic discharge component 80 can be connected to the metal shaft 422 of the driven wheel 42 in advance to achieve early electrostatic discharge.

[0094] Optionally, the preset conditions may include the integral value of the absolute value of the wafer electrostatic voltage over a preset time window being greater than a third preset threshold.

[0095] For example, the third preset threshold can be preset according to the wafer type, cleaning fluid type, cleaning chamber material, and process safety requirements. The preset time window can be from several seconds to several minutes, and this integral value can characterize the cumulative effect of static electricity over a period of time. Even if the absolute value of the instantaneous wafer electrostatic voltage is not high, if the wafer electrostatic voltage persists and accumulates to a certain level, it may still affect wafer 30. This application can achieve cumulative static electricity risk control through integral judgment.

[0096] Optionally, the electrostatic discharge component 80 can also predict the wafer electrostatic parameters after a preset time period based on the historical wafer electrostatic voltage values ​​collected by the electrostatic detection component 70 within a continuous time window. The preset conditions include that the absolute value of the predicted wafer electrostatic parameters is greater than a fourth preset threshold.

[0097] For example, historical wafer electrostatic voltage values ​​may include continuously acquired wafer electrostatic voltage values, rates of change, or other electrostatic characteristic data. The electrostatic derivation component 80 may use linear extrapolation, moving average, exponential smoothing, or other prediction algorithms to obtain predicted wafer electrostatic parameters after a preset time.

[0098] When the absolute value of the predicted electrostatic parameters of the wafer exceeds a fourth preset threshold, the electrostatic discharge component 80 is electrically connected to the metal shaft 422 of the driven wheel 42. Through this prediction method, this application can pre-establish an electrostatic discharge path before the electrostatic discharge actually reaches a dangerous level, reducing the time the wafer 30 is in a high electrostatic environment, thereby improving the safety of the wafer cleaning process.

[0099] This application includes an electrostatic discharge (ESD) detection component 70 mounted on the driven wheel 42 to detect the local ESD potential at the contact area between the edge of the wafer 30 and the driven wheel 42. Since the edge of the wafer 30 is a region of concentrated electric field during the cleaning process, the potential of this contact area can effectively reflect the ESD accumulation state at the edge of the wafer 30. Furthermore, when the charge distribution on the surface of the wafer 30 is relatively uneven, the potential in the edge region is often higher or changes at a faster rate, which may further exacerbate the potential difference between different locations on the surface of the wafer 30, thereby increasing the risk of partial discharge or arc breakdown.

[0100] This application can obtain the characteristic information of the electrostatic state of the wafer 30 in a timely and accurate manner by directly detecting the electrostatic potential at the edge of the driven wheel 42. This provides a direct and reliable basis for the trigger control of the electrostatic discharge component 80 and can effectively reduce the risk of partial discharge causing electrical damage to the wafer 30.

[0101] Optionally, the driving wheel 41 may also be disposed between two driven wheels 42. At least one electrostatic discharge (ESD) detection component 70 includes a first ESD detection component and a second ESD detection component. The first ESD detection component is disposed at the first driven wheel 42 and collects a first wafer ESD voltage value at a first position of the wafer 30. The second ESD detection component is disposed at the second driven wheel 42 and collects a second wafer ESD voltage value at a second position of the wafer 30. Preset conditions may include the difference between the absolute value of the first wafer ESD voltage value and the absolute value of the second wafer ESD voltage value being greater than a fifth preset threshold. Preset conditions may also include the absolute value of the first wafer ESD voltage value being greater than a first preset threshold. Preset conditions may also include the absolute value of the second wafer ESD voltage value being greater than a first preset threshold.

[0102] When the absolute value of the first wafer electrostatic voltage is greater than a first preset threshold, the electrostatic discharge component 80 is electrically connected to the metal shaft 422 of the corresponding first driven wheel 42. When the absolute value of the second wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component 80 is electrically connected to the metal shaft 422 of the corresponding second driven wheel 42. When the difference between the absolute values ​​of the first and second wafer electrostatic voltages is greater than a fifth preset threshold, the electrostatic discharge component 80 is electrically connected to either the metal shaft 422 of the corresponding first driven wheel 42, or the metal shaft 422 of the corresponding second driven wheel 42, or both the metal shafts 422 of the first and second driven wheels 42.

[0103] For example, the fifth preset threshold can be preset according to the wafer type, cleaning fluid type, cleaning chamber material, and process safety requirements. When the electrostatic voltage difference between different locations on the wafer 30 is large, it indicates that there may be local electrostatic imbalance in the cleaning chamber 20, which may lead to partial discharge or electric field concentration. At this time, the electrostatic discharge component 80 is connected to the metal shaft 422 of the driven wheel 42, which allows the local static electricity to be discharged through the electrostatic discharge path, thereby reducing the risk caused by electrostatic imbalance.

[0104] The electrostatic discharge component 80 determines whether the absolute value of the electrostatic voltage value of the first wafer collected by the first electrostatic detection component and the absolute value of the electrostatic voltage value of the second wafer collected by the second electrostatic detection component are greater than a first preset threshold. When the absolute value of the electrostatic voltage value of the first wafer is greater than the first preset threshold, the electrostatic discharge component 80 is electrically connected to the metal shaft 422 of the corresponding first driven wheel 42. When the absolute value of the electrostatic voltage value of the second wafer is greater than the first preset threshold, the electrostatic discharge component 80 is electrically connected to the metal shaft 422 of the corresponding second driven wheel 42.

[0105] The electrostatic discharge component 80 also calculates the difference between the absolute value of the first wafer electrostatic voltage and the absolute value of the second wafer electrostatic voltage. When this difference exceeds a fifth preset threshold, the electrostatic discharge component 80 determines that there is an abnormal potential difference between the two detection positions on the wafer surface. It then controls the electrostatic discharge component 80 to connect to the metal shaft 422 of the first driven wheel 42, or to the metal shaft 422 of the second driven wheel 42, or simultaneously to both metal shafts 422 of the driven wheels 42, to discharge the static electricity at the two positions respectively, thereby eliminating the local potential difference. For example, the connection between the electrostatic discharge component 80 and the metal shaft 422 of the corresponding driven wheel 42 can be determined based on the magnitude of the absolute values ​​of the first and second wafer electrostatic voltages.

[0106] This application, by setting up a first electrostatic discharge (ESD) detection component and a second ESD detection component, can collect the wafer ESD voltage values ​​at different locations in the cleaning chamber 20. When the difference between different locations is large, it controls the ESD discharge component 80 to conduct through the metal rotating shaft 422, thereby detecting local ESD imbalances within the cleaning chamber 20 and reducing the risk of discharge, particle adsorption, or current breakdown caused by local high-potential areas. This application can achieve targeted discharge when the absolute value of the ESD voltage at any detection point exceeds the standard, and differentiated ESD discharge when there is an abnormal potential difference between two points, thus avoiding the risk of discharge to ground caused by single-point ESD accumulation.

[0107] The electrostatic discharge component 80 can determine the potential difference between different locations on the surface of wafer 30 based on the difference between the absolute values ​​of the first and second wafer electrostatic voltage values. When this difference is greater than a fifth preset threshold, it indicates that there is a significant uneven charge distribution between the two detection locations on the surface of wafer 30, that is, the degree of charge accumulation in the local area is higher than that in the surrounding area, thereby forming a transverse electric field along the wafer surface.

[0108] When the electric field strength exceeds the breakdown field strength of the wafer surface medium or cleaning fluid medium, surface discharge or arc breakdown may occur. This application uses the voltage difference between two detection points as a preset judgment condition, which can directly reflect the non-uniformity of the charge distribution on the wafer 30 surface. Before the potential difference reaches the discharge threshold, the electrostatic discharge component 80 is triggered to conduct in advance, which can promptly discharge the locally accumulated static charge to eliminate the potential difference. This can prevent the risk of partial discharge caused by uneven surface charge distribution and further improve the electrostatic protection level during the wafer cleaning process.

[0109] Optionally, the electrostatic detection component 70 may further include a third electrostatic detection component and a fourth electrostatic detection component to collect electrostatic parameter information from more locations. The electrostatic output component 80 can calculate the maximum value, average value, difference, rate of change, or spatial distribution characteristics based on the sampled values ​​from multiple electrostatic detection components, thereby more accurately determining the electrostatic state within the cleaning chamber 20. This application does not impose any limitations on this.

[0110] Optionally, the electrostatic discharge (ESD) detection component 70 is disposed on the inner wall of the cleaning chamber 20 to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber 20. The ESD discharge component 80 determines the wafer ESD value based on the tank ESD value. The preset condition may include the absolute value of the wafer ESD value being greater than a first preset threshold.

[0111] For example, since static electricity on the surface of wafer 30 can be conducted to the inner wall of cleaning chamber 20 through electric field coupling or cleaning fluid, the electrostatic voltage value of the tank can indirectly reflect the electrostatic state of wafer 30. The static discharge component 80 can determine the corresponding electrostatic voltage value of the wafer based on the electrostatic voltage value of the tank.

[0112] The first preset threshold can be preset according to the wafer type, cleaning fluid type, cleaning chamber material, and process safety requirements. When the wafer electrostatic voltage value is greater than the first preset threshold, the electrostatic discharge component 80 is connected to the metal shaft 422 of the driven wheel 42 to reduce the electrostatic voltage in the cleaning chamber 20.

[0113] Optionally, the preset conditions may include a rate of change of the absolute value of the wafer electrostatic voltage value that is greater than a second preset threshold.

[0114] For example, the second preset threshold can be preset according to the wafer type, cleaning fluid type, cleaning chamber material, and process safety requirements. The rate of change of the absolute value of the wafer electrostatic voltage can be calculated based on continuously sampled wafer electrostatic voltage values. For example, if the wafer electrostatic voltage rises rapidly in a short period of time, even if the absolute value of the wafer electrostatic voltage has not yet exceeded the first preset threshold, it may indicate that a high electrostatic risk is about to occur in the cleaning chamber 20. Therefore, the electrostatic discharge component 80 can be connected to the metal shaft 422 of the driven wheel 42 in advance to achieve early electrostatic discharge.

[0115] Optionally, the preset conditions may include the integral value of the absolute value of the wafer electrostatic voltage over a preset time window being greater than a third preset threshold.

[0116] For example, the third preset threshold can be preset according to the wafer type, cleaning fluid type, cleaning chamber material, and process safety requirements. The preset time window can be from several seconds to several minutes, and this integral value can characterize the cumulative effect of static electricity over a period of time. Even if the absolute value of the instantaneous wafer electrostatic voltage is not high, if the wafer electrostatic voltage persists and accumulates to a certain level, it may still affect wafer 30. This application can achieve cumulative static electricity risk control through integral judgment.

[0117] Optionally, the electrostatic discharge component 80 determines the historical wafer electrostatic voltage value based on the historical tank electrostatic voltage values ​​collected by the electrostatic detection component 70 within a continuous time window, and predicts the wafer electrostatic parameter values ​​after a preset time based on the historical wafer electrostatic voltage values. The preset condition includes that the absolute value of the predicted wafer electrostatic parameter value is greater than a fourth preset threshold.

[0118] For example, the electrostatic discharge component 80, based on the electrostatic voltage values ​​of multiple historical tanks collected by the electrostatic detection component 70 within a continuous time window, first determines the corresponding historical wafer electrostatic voltage value according to the electrostatic voltage value of each historical tank, and then predicts the wafer electrostatic parameter prediction value after a preset time based on the changing trend of these historical wafer electrostatic voltage values ​​over time.

[0119] For example, historical wafer electrostatic voltage values ​​may include continuously acquired wafer electrostatic voltage values, rates of change, or other electrostatic characteristic data. The electrostatic derivation component 80 may use linear extrapolation, moving average, exponential smoothing, or other prediction algorithms to obtain predicted wafer electrostatic parameters after a preset time.

[0120] When the absolute value of the predicted electrostatic parameters of the wafer exceeds a fourth preset threshold, the electrostatic discharge component 80 is electrically connected to the metal shaft 422 of the driven wheel 42. Through this prediction method, this application can pre-establish an electrostatic discharge path before the electrostatic discharge actually reaches a dangerous level, reducing the time the wafer 30 is in a high electrostatic environment, thereby improving the safety of the wafer cleaning process.

[0121] In this application, the electrostatic voltage of the wafer is indirectly detected by measuring the electrostatic voltage of the tank on the inner wall of the cleaning chamber 20 and determining the electrostatic voltage of the wafer accordingly. On one hand, because the inner wall of the cleaning chamber 20 is fixed and has ample space, the electrostatic detection component 70 can be installed, wired, and maintained more easily, and is unaffected by vibrations and displacements caused by the high-speed rotation of the driven wheel 42, which is beneficial for improving the long-term stability of detection accuracy. On the other hand, there is a definite spatial electric field coupling relationship between the electrostatic voltage of the tank and the electrostatic voltage of the wafer. Based on this correspondence, the tank voltage can be converted into the wafer voltage, thereby achieving an accurate assessment of the wafer's electrostatic level in a non-contact manner. This setup allows for the acquisition of an effective basis for determining the wafer's electrostatic voltage without changing the internal layout of the cleaning chamber 20 or adding detection structures at the wafer edge.

[0122] Optionally, the electrostatic discharge component 80 determines the wafer electrostatic voltage value based on a preset compensation model according to the electrostatic voltage value of the tank and the material parameter value of the antistatic coating 21. The material parameter value includes at least one or more of the surface resistivity, thickness, and surface area of ​​the antistatic coating and the conductivity of the cleaning solution.

[0123] For example, since the electrostatic voltage on the surface of wafer 30 and the tank voltage on the inner wall of cleaning chamber 20 are not a simple linear correspondence, the surface resistivity of antistatic coating 21 determines the conduction rate of charge inside antistatic coating 21, the thickness and surface area of ​​antistatic coating 21 affect the equivalent capacitance and charge storage capacity, and the conductivity of cleaning fluid affects the migration behavior of charged ions in the liquid. These factors together determine the efficiency of electrostatic charge coupling and transfer from the surface of wafer 30 to the inner wall of cleaning chamber 20.

[0124] This application, by inputting these material parameters and process parameters into a preset compensation model, can deduce the true electrostatic voltage on the surface of wafer 30, thereby improving the accuracy and adaptability of indirect detection of wafer electrostatic voltage.

[0125] As an example, the preset compensation model can be an equivalent circuit model.

[0126] For example, the electrostatic discharge component 80 converts the tank electrostatic voltage value into the wafer electrostatic voltage value based on this equivalent circuit model. The calculation formula for this equivalent circuit model can be: ; in, This is the electrostatic voltage value of the wafer. This is the electrostatic voltage value of the tank. Let d be the surface resistivity of the antistatic coating 21, and d be the thickness of the antistatic coating 21. For the surface area of ​​the antistatic coating 21, The conductivity of the cleaning fluid, This is the compensation function determined based on circuit network analysis.

[0127] The electrostatic discharge component 80 discharges electrostatic voltage from the tank in real time. Combined with the known surface resistivity of antistatic coating 21 Thickness d, Surface area and the conductivity of the cleaning fluid Parameters, and compensation functions determined through circuit network analysis. The electrostatic voltage value of the wafer was calculated.

[0128] This equivalent circuit model considers the electric field coupling between the wafer 30 and the inner wall of the cleaning chamber 20, the charge conduction characteristics of the antistatic coating 21, the contribution of the cleaning fluid as a conductive path, and the impedance characteristics of the interface between the wafer 20 and the driven wheel 42. It can transform the electrostatic conduction mechanism under complex multi-physics coupling into a mathematical calculation model, thereby accurately converting the detected tank voltage into the actual electrostatic voltage on the wafer surface. With this configuration, this application can adapt to changes in operating conditions such as aging and wear of the antistatic coating 21 and batch differences in the cleaning fluid, improving the accuracy and robustness of indirect detection and providing a reliable basis for the accurate triggering of the electrostatic discharge component 80.

[0129] Optionally, the electrostatic discharge component 80 determines the wafer electrostatic voltage value based on preset calibration data of the tank electrostatic voltage value and the wafer electrostatic voltage value.

[0130] For example, charge detection devices (such as non-contact electrostatic voltmeters or miniature electric field probes) can simultaneously collect the electrostatic voltage values ​​of the tank and the wafer under various process conditions (such as different cleaning fluid flow rates, different rotation speeds, and different temperatures and humidity levels), forming a one-to-one calibration dataset. This calibration dataset is stored in the control unit in the form of a lookup table, a fitted curve, or a mapping function. During the actual cleaning process, the electrostatic discharge component 80 quickly obtains the corresponding wafer electrostatic voltage value from this calibration dataset by looking up the table or interpolating the real-time collected tank electrostatic voltage value.

[0131] This application can directly utilize the mapping relationship obtained in advance under the same or similar process conditions to convert the electrostatic voltage value of the tank to the electrostatic voltage value of the wafer, which has the advantages of simple implementation, small amount of calculation and fast response speed.

[0132] Optionally, a first electrostatic discharge (ESD) detection component is disposed on the inner wall of the cleaning chamber 20 to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber 20. A second ESD detection component is disposed on the driven wheel 42 to collect the second wafer ESD voltage value on the driven wheel 42. The ESD discharge component 80 determines the first wafer ESD voltage value based on the tank ESD voltage value. Preset conditions include that the difference between the first wafer ESD voltage value and the second wafer ESD voltage value is greater than a fifth preset threshold. Preset conditions may also include that the absolute value of the first wafer ESD voltage value is greater than a first preset threshold. Preset conditions may also include that the absolute value of the second wafer ESD voltage value is greater than a first preset threshold.

[0133] For example, the electrostatic discharge component 80 determines the corresponding first wafer electrostatic voltage value based on the electrostatic voltage value of the tank collected by the first electrostatic detection component, using the conversion method in any of the aforementioned embodiments (such as a compensation algorithm based on an equivalent circuit model or a lookup table method based on preset calibration data).

[0134] The first wafer electrostatic voltage value represents the wafer electrostatic level indirectly calculated through the coupling path of the inner wall of the cleaning chamber 20, while the second wafer electrostatic voltage value represents the actual electrostatic level of the wafer edge directly detected at the driven wheel 42. Under normal circumstances, the two should have good consistency, with the difference fluctuating within a small range. When the difference between the absolute values ​​of the two is greater than a fifth preset threshold, it indicates that there is obvious local non-uniformity in the electrostatic distribution on the surface of the wafer 30, that is, there is abnormal local charge accumulation in the non-contact area of ​​the wafer 30, or the antistatic coating 21 shows local performance degradation at that location.

[0135] Therefore, when the difference exceeds the fifth preset threshold, the electrostatic discharge component 80 determines that there is a local electrostatic anomaly on the surface of the wafer 30 or an abnormal state of the antistatic coating 21. It then controls the electrostatic discharge component 80 to connect to the metal shaft 422 of the driven wheel 42, establishing an electrostatic discharge path to eliminate the risk of electrostatic accumulation. Alternatively, when the absolute value of the first wafer electrostatic voltage or the absolute value of the second wafer electrostatic voltage exceeds the first preset threshold, the electrostatic discharge component 80 is connected to the metal shaft 422 of the driven wheel 42. With this configuration, this application can achieve comprehensive monitoring of the wafer's electrostatic state through dual verification via detection on the inner wall of the cleaning chamber 20 and direct detection at the driven wheel 42. It can also promptly detect abnormal electrostatic distribution or coating performance degradation, further improving the reliability and intelligence of the electrostatic protection system.

[0136] The electrostatic discharge component 80 determines the potential difference between the wafer 30 and the inner wall of the cleaning chamber 20 based on the difference between the absolute value of the first wafer electrostatic voltage value (calculated from the tank electrostatic voltage value) collected by the electrostatic detection component 70 and the absolute value of the second wafer electrostatic voltage value. This potential difference directly determines the electric field strength between the wafer 30 and the tank. The larger the potential difference, the higher the electric field strength. When this electric field strength exceeds the breakdown field strength of air or cleaning fluid, breakdown discharge may occur, causing irreversible electrical damage to the wafer 30. This application uses the difference between the electrostatic voltage of the tank and the electrostatic voltage of the wafer as a preset judgment condition to directly quantify the actual potential difference between the wafer 30 and the tank. When the difference is greater than a preset threshold, the electrostatic discharge component 80 is triggered to conduct, and the electrostatic discharge is discharged in time to reduce the potential difference between the wafer 30 and the tank. This controls the electric field strength below the breakdown threshold, which can prevent the risk of air or cleaning fluid breakdown discharge caused by excessive electric field strength between the wafer 30 and the tank from the source, and effectively ensure electrical safety in the wafer cleaning process.

[0137] Optionally, the first preset threshold, the second preset threshold, the third preset threshold, the fourth preset threshold, and the fifth preset threshold can be set according to the resistivity of the antistatic coating 21 and / or the main body of the wheel 421.

[0138] For example, the static discharge component 80 dynamically adjusts a preset threshold based on the surface resistivity of the antistatic coating 21 and / or the volume resistivity of the wheel body 421.

[0139] For example, when the surface resistivity of the antistatic coating 21 is 10... 6 When the Ω / □ value is high, the charge diffuses laterally more rapidly and the potential homogenization is higher. The electrostatic discharge component 80 appropriately lowers the preset threshold to improve the safety margin. When the volume resistivity of the rotor body 421 is at 10 Ω / □, 9 When the charge transfer path impedance is large at Ω·cm, the detection signal has a phase lag. The electrostatic discharge component 80 appropriately lowers the preset threshold to respond earlier, thereby compensating for the detection delay.

[0140] This application achieves synergistic optimization of detection characteristics and control strategies by selecting the resistivity of the antistatic coating 21 and the antistatic modified engineering plastic. On the one hand, the unpredictable local electrostatic accumulation behavior during wafer 30 cleaning can be transformed into an overall voltage trend with a definite changing pattern, making the electrostatic voltage on the wafer surface exhibit a "slow and smooth" gradual change characteristic, rather than a "sudden spike" type of drastic change. On the other hand, the multi-dimensional detection strategy (including absolute value determination, rate of change determination, time window integration determination, and trend prediction determination) is the optimal solution customized for this "smoothed voltage curve." The smooth voltage curve provides a stable and continuous detection signal for the multi-dimensional detection strategy, while the multi-dimensional detection strategy fully utilizes the multi-dimensional information such as amplitude, slope, and trend contained in the smooth curve to achieve a comprehensive and accurate assessment of electrostatic risks. The two are mutually adapted and synergistic, jointly maintaining the system electrostatic risk during the cleaning process within an acceptable process safety range.

[0141] Optionally, the width of the cleaning chamber 20 ranges from 90 mm to 110 mm.

[0142] For example, this width range provides adequate space for the wafer 30, ensuring that the cleaning chamber 20 is neither too narrow, which would affect the placement and rotation of the wafer 30, nor too wide, which would lead to cleaning fluid dispersion, excessively long electrostatic detection distance, or excessive space occupation. On the other hand, in applications where the cleaning chamber 20 is only 90mm to 110mm wide, the gap between the wafer 30 and the inner wall of the cleaning chamber 20 is small, resulting in increased electric field strength and faster electrostatic accumulation rate. At the same time, the narrow space has an amplifying effect on arc damage.

[0143] This application enables real-time monitoring by incorporating an electrostatic discharge (ESD) detection component 70. By employing an on-demand conduction method, the metal shaft 422 of the driven wheel 42 remains in an insulated, suspended state most of the time, thus avoiding the risk of becoming a fixed low-potential point and inducing an electric arc that could damage the wafer. This application is applicable to narrow-tank cleaning equipment ranging from 90mm to 110mm in diameter and features arc suppression, corrosion prevention, rapid response, and compact integration.

[0144] Optionally, such as Figure 1 As shown, the spraying assembly 60 includes a mounting base 61, a spray bar 62, and at least one spray head 63. The mounting base 61 is fixedly disposed at one end of the cleaning chamber 20 away from the substrate 10. The spray bar 62 is connected to the mounting base 61 and extends along the length of the cleaning chamber 20. At least one spray head 63 is disposed on the spray bar 62 for releasing cleaning fluid to the wafer 30.

[0145] For example, the spray bar 62 can be located above or to the side of the wafer 30, and multiple spray heads 63 are spaced apart along the length of the spray bar 62. The cleaning fluid is delivered to each spray head 63 through the spray bar 62 and sprayed onto the surface of the wafer 30 by each spray head 63.

[0146] Since the wafer 30 rotates under the support of the rotating support assembly 40, the cleaning fluid sprayed from the spray head 63 can cover different areas of the wafer 30, achieving a more uniform rinsing effect.

[0147] Optionally, such as Figure 5 As shown, the drive assembly 50 includes a motor base 51, a motor 52, a drive pulley 53, a driven pulley 54, and a transmission belt 55. The motor base 51 is fixedly mounted on the base plate 10, the motor 52 is mounted on the motor base 51, the drive pulley 53 is connected to the output shaft of the motor 52, the driven pulley 54 is connected to the drive pulley 41 in the support rotation assembly 40, and the transmission belt 55 is tensioned between the drive pulley 53 and the driven pulley 54.

[0148] When motor 52 is running, its output shaft drives the drive pulley 53 to rotate. The drive pulley 53 transmits power to the driven pulley 54 via the transmission belt 55. The driven pulley 54 is connected to the drive pulley 41, which in turn drives the drive pulley 41 to rotate. The drive pulley 41 further rotates the wafer 30 by contacting the edge of the wafer 30. By using belt drive, this application can maintain a certain distance between the motor 52 and the supporting rotating assembly 40 inside the cleaning chamber 20, which helps reduce the risk of the motor 52 being affected by the cleaning fluid.

[0149] Optionally, the antistatic coating 21 may include a transparent conductive material and a resin material.

[0150] For example, a transparent conductive material can be dispersed as a conductive component in a photosensitive resin or resin material, so that the antistatic coating 21 has a certain degree of conductivity while maintaining a transparent or semi-transparent state. By using a resin material, the antistatic coating 21 can be formed on the inner wall of the cleaning chamber 20 by photocuring, thereby facilitating the obtaining of a uniform, dense, and stably adhered coating.

[0151] Optionally, the antistatic coating 21 has a preset thickness, which ranges from 3μm to 5μm.

[0152] For example, this thickness range can balance conductivity, transparency, adhesion, and chemical corrosion resistance, while avoiding insufficient antistatic capability due to an excessively thin coating, and also avoiding insufficient curing, cracking, or affecting the internal dimensions of the cleaning chamber 20 due to an excessively thick coating.

[0153] According to an example embodiment, the wafer cleaning apparatus further includes a top cover 90 disposed at one end of the cleaning chamber 20 away from the substrate 10.

[0154] For example, such as Figure 1 As shown, the top cover 90 can be used to cover the top opening of the cleaning chamber 20, thereby reducing the splashing of cleaning fluid and reducing the possibility of external particles entering the cleaning chamber 20.

[0155] Optionally, such as Figure 5 As shown, the top cover 90 has a first opening 91 for placing the wafer 30 through the first opening 91. The side wall of the cleaning chamber 20 has a second opening 92 for gripping the wafer 30 through the second opening 92.

[0156] For example, the cooperation of the first opening 91 and the second opening 92 can facilitate the vertical placement of the wafer 30 onto the supporting rotating assembly 40, and can also facilitate the lateral gripping of the wafer 30 by a robotic arm or gripping tool.

[0157] According to another aspect of this application, another wafer cleaning apparatus is also provided.

[0158] According to an example embodiment, the wafer cleaning apparatus includes: a substrate, a cleaning chamber, a support rotation assembly, a drive assembly, a spraying assembly, at least one electrostatic detection assembly, and at least one electrostatic discharge assembly.

[0159] The cleaning chamber is vertically mounted on the substrate, and the wafer is placed inside the cleaning chamber. A support rotation assembly is fixedly mounted on the inner wall of the cleaning chamber. The support rotation assembly includes at least two support wheels, each of which includes a driving wheel and at least one driven wheel. Each driven wheel includes a wheel body and a metal shaft. The wheel body is made of antistatic modified engineering plastic filled with conductive filler.

[0160] At least one electrostatic discharge (ESD) detection component is installed in the cleaning chamber to collect ESD parameter information, including wafer ESD voltage and / or tank ESD voltage. At least one ESD discharge component is provided, corresponding to a driven wheel. Each ESD discharge component is configured to electrically connect to the metal shaft of the corresponding driven wheel when the wafer ESD voltage and / or tank ESD voltage meet preset conditions, thereby discharging the static electricity within the cleaning chamber through an ESD discharge path.

[0161] The cleaning chamber is made of engineering plastic, and the inner wall of the cleaning chamber is lined with an anti-static lining.

[0162] For example, the structure of the substrate, the supporting rotation assembly, the driving assembly, the spraying assembly, at least one electrostatic detection assembly, and at least one electrostatic discharge assembly is the same as described above, and will not be repeated here.

[0163] like Figure 6As shown, the antistatic liner 22 has a lower resistivity compared to the insulator. The antistatic liner 22 can reduce the surface resistance of the inner wall of the cleaning chamber 20, which makes the movement of charges on the surface of the inner wall of the cleaning chamber 20 slower and more controllable. It can continuously and slowly discharge charges, making it easier for the static electricity generated or adsorbed on the inner wall of the cleaning chamber 20 to be evenly diffused and released, thus avoiding the generation of a large static voltage difference.

[0164] According to another aspect of this application, a wafer cleaning method is also provided, which is performed based on the wafer cleaning apparatus described above.

[0165] Figure 7 A schematic flowchart of a wafer cleaning method according to an embodiment of this application is shown. Figure 7 As shown, the wafer cleaning method may include steps S100-S200.

[0166] In step S100, the wafer cleaning apparatus collects electrostatic parameter information from the cleaning chamber. The electrostatic parameter information includes the wafer electrostatic voltage value and / or the tank electrostatic voltage value.

[0167] In step S200, when the wafer electrostatic voltage value and / or tank electrostatic voltage value meet preset conditions, the wafer cleaning device controls the electrostatic discharge component to be electrically connected to the metal shaft of the corresponding driven wheel, so as to discharge the static electricity in the cleaning chamber through the electrostatic discharge path.

[0168] For example, during wafer cleaning, the electrostatic discharge (ESD) detection component continuously or intermittently collects ESD parameter information and sends the collected ESD parameter information to the control unit. When the collected wafer ESD voltage value and / or tank ESD voltage value meet preset conditions, the control unit connects the ESD discharge component to the metal shaft of the driven wheel to establish an ESD discharge path, thereby discharging the ESD in the cleaning chamber to the external grounding terminal.

[0169] By employing the above method, this application establishes an electrical connection only when static electricity accumulation reaches a level requiring active intervention, thus avoiding the risk of electrochemical corrosion of metal components caused by continuous grounding. Simultaneously, the static discharge path is achieved via the metal shaft of the driven wheel, fully utilizing the existing structure supporting the rotating assembly without requiring additional static electricity collection components, thus balancing the effectiveness of electrostatic protection with the simplicity of the device structure.

[0170] Optionally, the electrostatic detection component is mounted on the driven wheel to collect the electrostatic voltage value of the wafer at the wafer location.

[0171] Step S200 may include controlling the electrostatic discharge component to electrically connect with the metal shaft when the absolute value of the electrostatic voltage value of the wafer is greater than a first preset threshold.

[0172] Step S200 may further include controlling the electrostatic discharge component to electrically connect with the metal shaft when the rate of change of the absolute value of the wafer electrostatic voltage is greater than a second preset threshold.

[0173] Step S200 may further include controlling the electrostatic discharge component to electrically connect with the metal shaft when the integral value of the absolute value of the wafer electrostatic voltage within a preset time window is greater than a third preset threshold.

[0174] Step S200 may further include the wafer cleaning device predicting the wafer electrostatic parameters after a preset time based on the historical wafer electrostatic voltage values ​​collected by the electrostatic detection component within a continuous time window, and controlling the electrostatic discharge component to electrically connect with the metal shaft when the absolute value of the predicted wafer electrostatic parameters is greater than a fourth preset threshold.

[0175] Optionally, the supporting rotation assembly includes two driven wheels, with a driving wheel disposed between the two driven wheels. At least one electrostatic discharge (ESD) detection assembly includes a first ESD detection assembly and a second ESD detection assembly. The first ESD detection assembly is disposed at the first driven wheel and collects the first wafer ESD voltage value at a first position on the wafer. The second ESD detection assembly is disposed at the second driven wheel and collects the second wafer ESD voltage value at a second position on the wafer.

[0176] Step S200 may further include, if the absolute value of the first wafer electrostatic voltage is greater than a first preset threshold, controlling the electrostatic discharge component to electrically connect with the metal shaft of the corresponding first driven wheel. If the absolute value of the second wafer electrostatic voltage is greater than the first preset threshold, controlling the electrostatic discharge component to electrically connect with the metal shaft of the corresponding second driven wheel. If the difference between the absolute values ​​of the first and second wafer electrostatic voltages is greater than a fifth preset threshold, controlling the electrostatic discharge component to electrically connect with the metal shaft of the corresponding first driven wheel, or controlling the electrostatic discharge component to electrically connect with the metal shaft of the corresponding second driven wheel, or controlling the electrostatic discharge component to electrically connect with both the metal shafts of the first and second driven wheels.

[0177] Optionally, the first preset threshold, the second preset threshold, the third preset threshold, the fourth preset threshold, and the fifth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the wheel.

[0178] It is understood that the principle, method, and corresponding beneficial effects of controlling the electrostatic discharge component to electrically connect with the metal shaft based on the first, second, third, fourth, and fifth preset thresholds have been described in detail above and will not be repeated here.

[0179] Optionally, an electrostatic discharge (ESD) detection component is installed on the inner wall of the cleaning chamber to collect the ESD voltage value of the tank on the inner wall of the cleaning chamber. The wafer cleaning apparatus determines the wafer ESD voltage value based on the ESD voltage value of the tank.

[0180] Step S200 may further include controlling the electrostatic discharge component to electrically connect with the metal shaft when the absolute value of the wafer electrostatic voltage is greater than a first preset threshold.

[0181] Step S200 may further include controlling the electrostatic discharge component to electrically connect with the metal shaft when the rate of change of the absolute value of the wafer electrostatic voltage is greater than a second preset threshold.

[0182] Step S200 may further include controlling the electrostatic discharge component to electrically connect with the metal shaft when the integral value of the absolute value of the wafer electrostatic voltage within a preset time window is greater than a third preset threshold.

[0183] Step S200 may further include: the wafer cleaning device determining the historical wafer electrostatic voltage value based on the historical tank electrostatic voltage value collected by the electrostatic detection component within a continuous time window, so as to predict the wafer electrostatic parameter prediction value after a preset time based on the historical wafer electrostatic voltage value; and controlling the electrostatic discharge component to electrically connect with the metal shaft when the absolute value of the wafer electrostatic parameter prediction value is greater than a fourth preset threshold.

[0184] Optionally, at least one electrostatic discharge (ESD) detection component includes a first ESD detection component and a second ESD detection component. The first ESD detection component is disposed on the inner wall of the cleaning chamber and collects the ESD voltage value of the tank on the inner wall of the cleaning chamber. The second ESD detection component is disposed on the driven wheel and collects the ESD voltage value of the second wafer on the driven wheel.

[0185] Step S200 may further include: the wafer cleaning apparatus determining a first wafer electrostatic voltage value based on the tank electrostatic voltage value; and controlling the electrostatic discharge component to electrically connect to the metal shaft if the difference between the absolute value of the first wafer electrostatic voltage value and the absolute value of the second wafer electrostatic voltage value is greater than a fifth preset threshold. The electrostatic discharge component is also electrically connected to the metal shaft if the absolute value of the first wafer electrostatic voltage value is greater than the first preset threshold.

[0186] It is understood that the principle, method, and corresponding beneficial effects of controlling the electrostatic discharge component to electrically connect with the metal shaft based on the first, second, third, fourth, and fifth preset thresholds have been described in detail above and will not be repeated here.

[0187] Optionally, the wafer cleaning apparatus determines the wafer electrostatic voltage value based on the tank electrostatic voltage value by: the wafer cleaning apparatus determining the wafer electrostatic voltage value based on the tank electrostatic voltage value and the material parameter value of the antistatic coating, and the material parameter value includes at least one or more of the surface resistivity, thickness, surface area of ​​the antistatic coating and the conductivity of the cleaning solution.

[0188] Optionally, the wafer cleaning device determines the wafer electrostatic voltage value based on the tank electrostatic voltage value by: the wafer cleaning device determining the wafer electrostatic voltage value based on preset calibration data of the tank electrostatic voltage value and the wafer electrostatic voltage value.

[0189] It is understood that the principle, method, and corresponding beneficial effects of determining the wafer electrostatic voltage value based on the preset compensation model and / or preset calibration data have been described in detail above and will not be repeated here.

[0190] According to another aspect of this application, a wafer processing apparatus is also provided. This wafer processing apparatus includes the wafer cleaning apparatus as described above.

[0191] Finally, it should be noted that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions of the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A wafer cleaning apparatus, characterized in that, include: substrate; A cleaning chamber is vertically disposed on the substrate, and a wafer is disposed in the cleaning chamber; A rotating support assembly is fixedly installed on the inner wall of the cleaning chamber; the rotating support assembly includes at least two support wheels, each of the at least two support wheels including a driving wheel and at least one driven wheel, each driven wheel including a wheel body and a metal shaft, the wheel body being made of antistatic modified engineering plastic filled with conductive filler; At least one electrostatic detection component is disposed in the cleaning chamber for collecting electrostatic parameter information in the cleaning chamber, the electrostatic parameter information including wafer electrostatic voltage value and / or tank electrostatic voltage value; At least one electrostatic discharge component is provided, corresponding to each of the driven wheels. Each electrostatic discharge component is configured to be electrically connected to the metal shaft of the corresponding driven wheel when the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meets a preset condition, so as to discharge the static electricity in the cleaning chamber through the electrostatic discharge path.

2. The wafer cleaning apparatus according to claim 1, characterized in that, The cleaning chamber is made of engineering plastic, and the inner wall of the cleaning chamber is provided with an antistatic coating.

3. The wafer cleaning apparatus according to claim 2, characterized in that, The surface resistivity of the antistatic coating is 10. 6 ~10 9 The resistivity of the antistatic modified engineering plastic is between Ω and □; and / or, the resistivity of the antistatic modified engineering plastic is between 10 Ω and □. 4 ~10 7 Between Ω·cm.

4. The wafer cleaning apparatus according to claim 2, characterized in that, The electrostatic discharge component includes: An electrostatic discharge contact unit is disposed on the inner wall of the cleaning chamber and is selectively electrically connected to the end face of the metal shaft of the driven wheel; The control unit is electrically connected to the at least one electrostatic detection component and the electrostatic conductive contact unit, and is used to control the electrostatic conductive contact unit to be electrically connected to the metal shaft when the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meets the preset conditions. A grounding unit is disposed on the outer wall of the cleaning chamber and electrically connected to the electrostatic discharge contact unit to form the electrostatic discharge path, so as to discharge the static electricity in the cleaning chamber through the electrostatic discharge path.

5. The wafer cleaning apparatus according to claim 4, characterized in that, The electrostatic conductive contact unit includes: The drive unit is electrically connected to the control unit and is used to generate driving force in response to the control commands of the control unit. The contact part is connected to the driving part and moves to the contact position or the disconnect position under the driving force. The contact part is selectively electrically connected to the end face of the metal shaft and electrically connected to the grounding unit. In the contact position, the contact portion is electrically connected to the metal shaft; in the disconnect position, there is a preset distance between the contact portion and the metal shaft, and the contact portion is disconnected from the metal shaft.

6. The wafer cleaning apparatus according to claim 5, characterized in that, The drive unit includes: The drive motor is equipped with an output shaft; A lead screw is connected to the output shaft and extends in the direction of travel toward the metal shaft; A push rod is mounted on the lead screw, and the contact part is fixedly mounted on the push rod.

7. The wafer cleaning apparatus according to claim 2, characterized in that, The electrostatic detection component is mounted on the driven wheel to collect the electrostatic voltage value of the wafer at the wafer location; The preset condition includes that the absolute value of the wafer electrostatic voltage value is greater than a first preset threshold. and / or The preset condition includes a rate of change of the absolute value of the wafer electrostatic voltage value that is greater than a second preset threshold. and / or The preset conditions include the integral value of the absolute value of the wafer electrostatic voltage value within a preset time window being greater than a third preset threshold. and / or The electrostatic discharge component predicts the electrostatic parameters of the wafer after a preset time based on the historical wafer electrostatic voltage values ​​collected by the electrostatic detection component within a continuous time window. The preset conditions include that the absolute value of the predicted value of the wafer electrostatic parameters is greater than a fourth preset threshold. The first preset threshold, the second preset threshold, the third preset threshold, and the fourth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the rotor.

8. The wafer cleaning apparatus according to claim 7, characterized in that, The supporting rotation assembly includes two driven wheels, and the driving wheel is disposed between the two driven wheels. The at least one electrostatic detection assembly includes: The first electrostatic detection component is set at the first driven wheel to collect the electrostatic voltage value of the first wafer at the first position of the wafer. The second electrostatic detection component is located at the second driven wheel and collects the electrostatic voltage value of the second wafer at the second position of the wafer. The preset conditions include the difference between the absolute value of the first wafer electrostatic voltage and the absolute value of the second wafer electrostatic voltage being greater than a fifth preset threshold; and / or, the absolute value of the first wafer electrostatic voltage being greater than the first preset threshold; and / or, the absolute value of the second wafer electrostatic voltage being greater than the first preset threshold; When the absolute value of the first wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding first driven wheel; and / or, when the absolute value of the second wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel; and / or, when the difference between the absolute values ​​of the first wafer electrostatic voltage and the second wafer electrostatic voltage is greater than the fifth preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding first driven wheel, or the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel, or the electrostatic discharge component is electrically connected to both the metal shaft of the first driven wheel and the metal shaft of the second driven wheel. The fifth preset threshold is set according to the resistivity of the antistatic coating and / or the main body of the rotor.

9. The wafer cleaning apparatus according to claim 2, characterized in that, The electrostatic detection component is installed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber. The electrostatic discharge component determines the wafer electrostatic voltage value based on the electrostatic voltage value of the tank. The preset condition includes that the absolute value of the wafer electrostatic voltage value is greater than a first preset threshold. and / or The preset condition includes a rate of change of the absolute value of the wafer electrostatic voltage value that is greater than a second preset threshold. and / or The preset conditions include the integral value of the absolute value of the wafer electrostatic voltage value within a preset time window being greater than a third preset threshold. and / or The electrostatic discharge component determines the historical wafer electrostatic voltage value based on the historical tank electrostatic voltage value collected by the electrostatic detection component within a continuous time window, and predicts the wafer electrostatic parameter prediction value after a preset time based on the historical wafer electrostatic voltage value. The preset conditions include that the absolute value of the predicted value of the wafer electrostatic parameters is greater than a fourth preset threshold. The first preset threshold, the second preset threshold, the third preset threshold, and the fourth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the rotor.

10. The wafer cleaning apparatus according to claim 9, characterized in that, The electrostatic discharge component determines the electrostatic voltage value of the wafer based on the electrostatic voltage value of the tank and the material parameter value of the antistatic coating, using a preset compensation model. The material parameter value includes at least one or more of the surface resistivity, thickness, and surface area of ​​the antistatic coating and the conductivity of the cleaning solution. or The electrostatic discharge component determines the electrostatic voltage value of the wafer based on preset calibration data of the electrostatic voltage value of the tank and the electrostatic voltage value of the wafer.

11. The wafer cleaning apparatus according to claim 9, characterized in that, The at least one electrostatic detection component includes: The first electrostatic detection component is installed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber. The second electrostatic detection component is mounted on the driven wheel to collect the electrostatic voltage value of the second wafer on the driven wheel; The electrostatic discharge component determines the electrostatic voltage value of the first wafer based on the electrostatic voltage value of the tank. The preset conditions include the difference between the absolute value of the first wafer electrostatic voltage and the absolute value of the second wafer electrostatic voltage being greater than a fifth preset threshold; and / or, the absolute value of the first wafer electrostatic voltage being greater than the first preset threshold; and / or, the absolute value of the second wafer electrostatic voltage being greater than the first preset threshold; The fifth preset threshold is set according to the resistivity of the antistatic coating and / or the main body of the rotor.

12. The wafer cleaning apparatus according to claim 1, characterized in that, The width of the cleaning chamber ranges from 90mm to 110mm.

13. The wafer cleaning apparatus according to claim 2, characterized in that, The antistatic coating comprises a transparent conductive material and a resin material.

14. The wafer cleaning apparatus according to claim 2, characterized in that, The antistatic coating has a preset thickness, which ranges from 3μm to 5μm.

15. A wafer cleaning method, characterized in that, Using the wafer cleaning apparatus as described in any one of claims 1-14, the wafer cleaning method comprises: Collect electrostatic parameter information in the cleaning chamber, including wafer electrostatic voltage value and / or tank electrostatic voltage value; When the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meet the preset conditions, the electrostatic discharge component is controlled to be electrically connected to the metal shaft of the corresponding driven wheel to discharge the static electricity in the cleaning chamber through the electrostatic discharge path.

16. The wafer cleaning method according to claim 15, characterized in that, The electrostatic discharge (ESD) detection component is mounted on the driven wheel and collects the ESD voltage value at the wafer. When the ESD voltage value of the wafer and / or the ESD voltage value of the tank meet preset conditions, the ESD discharge component is electrically connected to the metal shaft of the corresponding driven wheel, including: When the absolute value of the wafer electrostatic voltage exceeds a first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or When the rate of change of the absolute value of the wafer electrostatic voltage exceeds a second preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or If the integral of the absolute value of the wafer electrostatic voltage over a preset time window is greater than a third preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or Based on the historical wafer electrostatic voltage values ​​collected by the electrostatic detection component within a continuous time window, the predicted values ​​of wafer electrostatic parameters after a preset time are predicted. If the absolute value of the predicted wafer electrostatic parameters is greater than a fourth preset threshold, the electrostatic discharge component is controlled to be electrically connected to the metal shaft. The inner wall of the cleaning chamber is provided with an antistatic coating, and the first preset threshold, the second preset threshold, the third preset threshold and the fourth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the impeller.

17. The wafer cleaning method according to claim 16, characterized in that, The supporting rotation assembly includes two driven wheels, and the driving wheel is disposed between the two driven wheels. The at least one electrostatic detection assembly includes: The first electrostatic detection component is set at the first driven wheel to collect the electrostatic voltage value of the first wafer at the first position of the wafer. The second electrostatic detection component is located at the second driven wheel and collects the electrostatic voltage value of the second wafer at the second position of the wafer. When the electrostatic discharge component is electrically connected to the metal shaft of the corresponding driven wheel when the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meets preset conditions, the following steps are included: When the absolute value of the first wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding first driven wheel; and / or, when the absolute value of the second wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel; and / or, when the difference between the absolute values ​​of the first wafer electrostatic voltage and the second wafer electrostatic voltage is greater than a fifth preset threshold, the electrostatic discharge component is electrically connected to the metal shaft of the corresponding first driven wheel, or the electrostatic discharge component is electrically connected to the metal shaft of the corresponding second driven wheel, or the electrostatic discharge component is electrically connected to both the metal shaft of the first driven wheel and the metal shaft of the second driven wheel. The inner wall of the cleaning chamber is provided with an antistatic coating, and the fifth preset threshold is set according to the resistivity of the antistatic coating and / or the main body of the impeller.

18. The wafer cleaning method according to claim 15, characterized in that, The electrostatic detection component is installed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber. When the electrostatic discharge component is electrically connected to the metal shaft of the corresponding driven wheel when the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meets preset conditions, the following steps are included: The electrostatic voltage value of the wafer is determined based on the electrostatic voltage value of the tank. When the absolute value of the wafer electrostatic voltage exceeds a first preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or When the rate of change of the absolute value of the wafer electrostatic voltage exceeds a second preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or If the integral of the absolute value of the wafer electrostatic voltage over a preset time window is greater than a third preset threshold, the electrostatic discharge component is electrically connected to the metal shaft; and / or Based on the historical electrostatic voltage values ​​of the tank collected by the electrostatic detection component within a continuous time window, the historical electrostatic voltage values ​​of the wafer are determined, and the predicted values ​​of the wafer electrostatic parameters after a preset time are predicted based on the historical wafer electrostatic voltage values; if the absolute value of the predicted value of the wafer electrostatic parameters is greater than a fourth preset threshold, the electrostatic discharge component is controlled to be electrically connected to the metal shaft. The inner wall of the cleaning chamber is provided with an antistatic coating, and the first preset threshold, the second preset threshold, the third preset threshold and the fourth preset threshold are set according to the resistivity of the antistatic coating and / or the main body of the impeller.

19. The wafer cleaning method according to claim 18, characterized in that, The inner wall of the cleaning chamber is provided with an antistatic coating. Determining the wafer electrostatic voltage value based on the electrostatic voltage value of the tank includes: The electrostatic voltage value of the wafer is determined based on the electrostatic voltage value of the tank and the material parameter value of the antistatic coating, according to a preset compensation model. The material parameter value includes at least one or more of the surface resistivity, thickness, and surface area of ​​the antistatic coating and the conductivity of the cleaning solution. or The electrostatic voltage value of the wafer is determined based on the preset calibration data of the electrostatic voltage value of the tank and the electrostatic voltage value of the wafer.

20. The wafer cleaning method according to claim 18, characterized in that, The at least one electrostatic detection component includes: The first electrostatic detection component is installed on the inner wall of the cleaning chamber to collect the electrostatic voltage value of the tank on the inner wall of the cleaning chamber. The second electrostatic detection component is mounted on the driven wheel to collect the electrostatic voltage value of the second wafer on the driven wheel; When the electrostatic discharge component is electrically connected to the metal shaft of the corresponding driven wheel when the electrostatic voltage value of the wafer and / or the electrostatic voltage value of the tank meets preset conditions, the following steps are included: The electrostatic voltage value of the first wafer is determined based on the electrostatic voltage value of the tank. If the difference between the absolute value of the first wafer electrostatic voltage and the absolute value of the second wafer electrostatic voltage is greater than a fifth preset threshold, the electrostatic discharge component is controlled to be electrically connected to the metal shaft; and / or, if the absolute value of the first wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component is controlled to be electrically connected to the metal shaft; and / or, if the absolute value of the second wafer electrostatic voltage is greater than the first preset threshold, the electrostatic discharge component is controlled to be electrically connected to the metal shaft. The inner wall of the cleaning chamber is provided with an antistatic coating, and the fifth preset threshold is set according to the resistivity of the antistatic coating and / or the main body of the impeller.

21. A wafer processing apparatus, characterized in that, Includes the wafer cleaning apparatus as described in any one of claims 1-14.

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