A silicon wafer cleaning device and a cleaning method

Abstract

The present disclosure relates to the technical field of silicon wafer cleaning, and provides a silicon wafer cleaning device and a cleaning method. The device comprises a cleaning box, a cleaning tank, a bubbling assembly and a cleaning jig. The cleaning jig comprises oppositely arranged cleaning plates, a first cleaning column and a second cleaning column, and a plurality of silicon wafers are supported between the first cleaning column and the second cleaning column. The second cleaning column is connected with a swing member arranged outside the cleaning plate. The rising bubbles generated by the bubbling assembly impact the swing member, drive the second cleaning column to swing, and thus drive the silicon wafers to swing synchronously in the cleaning liquid. During the cleaning process, the surface of the silicon wafer is in continuous dynamic flow contact with the cleaning liquid, and the bubble disturbance is combined to promote the desorption of pollutants. The device can improve the cleaning liquid exchange efficiency, reduce the fluid retention area, enhance the cleaning effect of the surface and the gap area of the silicon wafer, and is suitable for batch cleaning of semiconductor and photovoltaic silicon wafers.

Description

Technical Field

[0001] This disclosure relates to the field of silicon wafer cleaning technology, and more specifically, to a silicon wafer cleaning apparatus and cleaning method. Background Technology

[0002] Silicon wafers are a crucial basic material in the manufacturing of semiconductor devices, solar cells, and microelectronic components. The surface cleanliness of silicon wafers directly affects the processing quality of subsequent processes and the performance of the final product. During silicon wafer production, after processes such as cutting, grinding, polishing, etching, and handling, impurities such as particulate matter, metal ions, organic contaminants, and processing residues typically adhere to the surface of the wafer. If these contaminants are not removed promptly and effectively, surface defects on the silicon wafer can increase, thereby affecting device yield and product reliability.

[0003] In existing technologies, quartz mixed acid cleaning lines are mostly used for silicon wafer cleaning during the silicon wafer production process. These lines typically use hydrofluoric acid and other acidic solutions to prepare a mixed acid cleaning solution, which is then used to immerse and clean silicon wafers loaded in cleaning baskets. To facilitate batch cleaning, multiple silicon wafers are usually spaced and positioned using cleaning baskets. However, because the cleaning baskets strongly confine the silicon wafers, their movement space is restricted, resulting in insufficient relative flow between the wafer surface and the surrounding cleaning solution. This leads to fluid stagnation zones in certain areas, especially at the wafer edges and in the gaps between adjacent wafers, affecting the cleaning solution's renewal rate and the efficiency of contaminant removal.

[0004] Therefore, how to improve the oscillation amplitude and cleaning effect of silicon wafers during the cleaning process without affecting the safety limit and batch cleaning of silicon wafers has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] The purpose of this disclosure is to provide a silicon wafer cleaning apparatus and cleaning method that solves the problems mentioned in the background art.

[0006] According to a first aspect, this disclosure provides a silicon wafer cleaning apparatus, including a cleaning tank, wherein the cleaning tank is provided with a cleaning tank for storing cleaning fluid, and the cleaning tank is provided with a bubbling assembly and a cleaning fixture, wherein the height of the cleaning fixture is higher than the height of the bubbling assembly; The cleaning fixture includes two cleaning plates arranged opposite each other, with two first cleaning columns and two second cleaning columns provided between the two cleaning plates. The height of the second cleaning columns is higher than the height of the first cleaning columns, and the distance between the two first cleaning columns is smaller than the distance between the two second cleaning columns. Each of the cleaning plates is hinged to the outside of a swinging member, and each cleaning plate is provided with a through swinging groove. Each end of at least one of the second cleaning columns passes through the corresponding swinging groove and is connected to the swinging member. Both the first cleaning column and the second cleaning column are used to support multiple silicon wafers to be cleaned at intervals. The bubbling assembly is used to provide rising bubbles to the cleaning liquid in the cleaning tank. The rising bubbles impact the oscillating member. The oscillating member is used to drive the second cleaning column to oscillate, so that the silicon wafers to be cleaned are oscillated and cleaned in the cleaning tank.

[0007] Optionally, the swing groove is provided with a first groove wall and a second groove wall respectively arranged in an arc shape. When the swing member is not swinging, the end of the second cleaning column is in contact with the first groove wall, and the end of the second cleaning column is separated from the second groove wall.

[0008] Optionally, a first limiting plane and a second limiting plane are provided opposite to each other in the swing groove. The first limiting plane is connected to the same end of the first groove wall and the second groove wall, respectively, and the second limiting plane is connected to the other same end of the first groove wall and the second groove wall, respectively.

[0009] Optionally, each of the swinging components includes a first swing plate and a second swing plate, one end of the first swing plate is hinged to the cleaning plate, the other end of the first swing plate is hinged to the second swing plate, and each end of at least one of the second cleaning columns is inserted into the second swing plate.

[0010] Optionally, the outer wall of the second swing plate is provided with a second hinge shaft, the second hinge shaft is eccentrically positioned with respect to the center of the second swing plate, and the first swing plate is provided with a second hinge hole that rotatably engages with the second hinge shaft.

[0011] Optionally, the two first cleaning columns are at the same height, and the two second cleaning columns are at the same height; the first swing plate is arranged in a vertical direction, the outer wall of the cleaning plate is provided with a first hinge shaft, and the first swing plate is provided with a first hinge hole that rotatably engages with the first hinge shaft.

[0012] Optionally, the first cleaning column is provided with a plurality of first columns, the first column near the cleaning plate is provided with a first supporting inclined surface, and two first supporting inclined surfaces are provided at relative intervals on the same first column located inside the first cleaning column. The second cleaning column is provided with multiple second columns, and the second column near the cleaning plate is provided with a second supporting inclined surface. Two second supporting inclined surfaces are provided at relative intervals on the same second column located inside the second cleaning column. The two adjacent first support ramps and the two adjacent second support ramps are used together to support the silicon wafer to be cleaned.

[0013] Optionally, both the first and second support slopes are tapered slopes, with every two first support slopes connected together and every two second support slopes connected together. The first column near the cleaning plate has a first abutting surface that abuts against the cleaning plate, and the second column near the cleaning plate has a second abutting surface that abuts against the cleaning plate.

[0014] Optionally, the cleaning fixture further includes a cleaning basket, the cleaning basket having an inclined positioning strip inside, the bottom of the cleaning plate having a positioning groove that positions and engages with the positioning strip; and the top of the cleaning basket having a positioning hook for engaging with an external robotic arm.

[0015] Optionally, the bubbling assembly includes a bubbling tube, one end of which is an open end and the other end of which is a closed end, and the outer wall of the bubbling tube has a plurality of bubbling openings arranged at intervals along a straight line.

[0016] Optionally, the number of bubbling tubes is set to multiple, and the multiple bubbling tubes are arranged in parallel at intervals in the cleaning tank; One of the bubble tubes has its open end protruding from the cleaning tank, and two adjacent bubble tubes are connected by a connecting pipe.

[0017] Optionally, the cleaning tank is provided with a partition for separating the two cleaning tanks, the bottom of the cleaning tank is provided with a drain pipe communicating with each of the cleaning tanks, and an overflow pipe is also installed on the cleaning tank.

[0018] According to a second aspect, this disclosure provides a silicon wafer cleaning method, applied to the silicon wafer cleaning apparatus as described in the first aspect, comprising: Step S1: Support multiple silicon wafers to be cleaned at intervals on the first and second cleaning columns, and place the cleaning fixture in the cleaning tank so that the silicon wafers are immersed in the cleaning solution; Step S2: Start the bubbling assembly and continuously introduce gas into the cleaning solution, so that the bubbles move from bottom to top and impact the oscillating component. The oscillating component drives the second cleaning column to oscillate back and forth, so as to drive multiple silicon wafers to oscillate synchronously in the cleaning solution. Step S3: During the silicon wafer oscillation process, the silicon wafer surface is cleaned with a cleaning solution, so that the silicon wafer surface and the cleaning solution form a dynamic flow contact. The surface contaminants are desorbed by the bubble disturbance and the silicon wafer oscillation, thus completing the silicon wafer cleaning.

[0019] As can be seen from the above technical solutions, the silicon wafer cleaning apparatus and cleaning method in the exemplary embodiments of this disclosure have at least the following advantages and positive effects: A first and second cleaning column are used to support the silicon wafer. The second cleaning column is linked to a swinging component. The rising bubbles generated by the bubbling assembly directly act on the swinging component, causing the second cleaning column to swing. Since the silicon wafer is supported between the first and second cleaning columns, the swinging of the second cleaning column can drive the silicon wafer to swing synchronously in the cleaning solution, thereby changing the relative motion state between the silicon wafer and the surrounding cleaning solution.

[0020] Compared to traditional fixed loading structures, the liquid on the silicon wafer surface and between adjacent silicon wafers can be continuously renewed, reducing local liquid stagnation and making it easier for the cleaning fluid to enter the silicon wafer edges and inter-wafer gaps. This increases the contact opportunities between contaminants and the cleaning fluid, and enhances the desorption capacity of particulate matter, residual impurities, and attached contaminants.

[0021] Meanwhile, the rising bubbles formed by the bubbling assembly not only provide driving force for the oscillating component but also continuously agitate the cleaning fluid. The combined effect of the silicon wafer oscillation and bubble agitation creates a more active fluid exchange environment within the cleaning tank, promoting the diffusion and transfer of contaminants from the silicon wafer surface into the cleaning fluid. This achieves dynamic cleaning effects during batch silicon wafer cleaning without the need for complex power mechanisms, balancing stable wafer support with improved cleaning efficiency, thus enhancing the overall cleanliness and uniformity of the silicon wafers.

[0022] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0023] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings: Figure 1 A three-dimensional structural schematic diagram of a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 2 A half-sectional structural schematic diagram of a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 3 A partial top view of a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 4 A three-dimensional structural schematic diagram of a cleaning fixture in a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 5A partial structural schematic diagram of a cleaning fixture in a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 6 A schematic diagram of the structure of a cleaning plate in a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 7 It shows Figure 6 A schematic diagram of the AA cross-sectional structure; Figure 8 A schematic diagram of the structure of a swinging component in a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 9 This diagram illustrates the structure of a first cleaning column and a second cleaning column in a silicon wafer cleaning apparatus according to an embodiment of the present disclosure. Figure 10 A schematic diagram of the bubbling assembly in a silicon wafer cleaning apparatus according to an embodiment of the present disclosure is shown; Figure 11 A flowchart of a silicon wafer cleaning method according to an embodiment of the present disclosure is shown.

[0024] Illustration: 001. Silicon wafer to be cleaned; 100. Cleaning tank; 110. Cleaning trough; 120. Partition; 130. Drain pipe; 140. Overflow pipe; 150. Positioning plate; 160. Mounting plate; 200. Bubble assembly; 210. Bubble tube; 211. Bubble inlet; 220. Connecting tube; 300. Cleaning fixture; 310. Cleaning plate; 311. Swinging groove; 3111. First groove wall; 3112. Second groove wall; 3113. First limiting plane; 3114. Second limiting plane; 312. First hinge shaft; 313. Positioning groove; 320. First cleaning column; 321. First column; 3211. First supporting inclined surface; 3212. First abutting plane; 330. Second cleaning column; 331. Second column; 3311. Second supporting inclined surface; 3312. Second abutting plane; 340. Swinging component; 341. First swing plate; 3411. First hinge hole; 3412. Second hinge hole; 342. Second swing plate; 3421. Second hinge shaft; 3422. Swinging hole; 350. Cleaning basket; 351. Positioning strip; 352. Positioning hook. Detailed Implementation

[0025] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art.

[0026] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this disclosure. However, those skilled in the art will recognize that the technical solutions of this disclosure can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this disclosure.

[0027] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0028] Please see Figures 1 to 10 This disclosure provides a silicon wafer cleaning apparatus, which includes a cleaning tank 100. The cleaning tank 100 contains a cleaning tank 110 for holding a cleaning solution, which may be a hydrofluoric acid mixed acid cleaning solution, deionized water, or other liquids suitable for silicon wafer cleaning. The cleaning tank 110 contains a bubbling assembly 200 and a cleaning fixture 300. The bubbling assembly 200 is located below the cleaning fixture 300, and the height of the cleaning fixture 300 is higher than the height of the bubbling assembly 200, so that the bubbles generated by the bubbling assembly 200 can move upwards and act on the cleaning fixture 300.

[0029] Specifically, the cleaning fixture 300 includes two cleaning plates 310 arranged opposite each other, with two first cleaning columns 320 and two second cleaning columns 330 disposed between the two cleaning plates 310. The two first cleaning columns 320 are spaced apart, and the two second cleaning columns 330 are also spaced apart; the height of the second cleaning columns 330 is higher than the height of the first cleaning columns 320, and the distance between the two first cleaning columns 320 is smaller than the distance between the two second cleaning columns 330. Multiple silicon wafers 001 to be cleaned are supported at intervals between the first cleaning columns 320 and the second cleaning columns 330, and a preset distance is maintained between adjacent silicon wafers 001 to be cleaned, thereby ensuring that the cleaning solution can enter the area between adjacent silicon wafers 001 to be cleaned.

[0030] Each cleaning plate 310 has a hinged swing member 340 on its outer side, and each cleaning plate 310 has a through swing groove 311. At least one second cleaning column 330 has its two ends passing through the corresponding swing groove 311 and connected to the corresponding swing member 340. The swing member 340 can swing relative to the cleaning plate 310, and the second cleaning column 330 can be displaced relative to the cleaning plate 310 under the action of the swing member 340.

[0031] The bubbling assembly 200 continuously supplies gas into the cleaning tank 110. After entering the cleaning fluid, the gas forms numerous rising bubbles. Since the oscillating component 340 is located on the rising path of the bubbles, the rising bubbles continuously impact the oscillating component 340 during its movement, causing the oscillating component 340 to oscillate. When the oscillating component 340 oscillates, it drives the second cleaning column 330 connected to it to oscillate synchronously.

[0032] Since multiple silicon wafers 001 to be cleaned are supported between the first cleaning column 320 and the second cleaning column 330, when the second cleaning column 330 swings, the multiple silicon wafers 001 to be cleaned can swing synchronously in the cleaning fluid. Compared with the traditional fixed cleaning structure, the silicon wafers 001 to be cleaned and the surrounding cleaning fluid form a continuously changing relative motion state, which makes the cleaning fluid on the surface of the silicon wafers and between adjacent silicon wafers constantly renewed, reducing the phenomenon of fluid stagnation in local areas.

[0033] During the cleaning process, the rising bubbles generated by the bubbling assembly 200 not only drive the oscillating component 340 to oscillate, but also continuously agitate the cleaning fluid. The combined effect of the oscillation of the silicon wafer 001 to be cleaned and the bubble agitation makes it easier for the cleaning fluid to enter the edge area of ​​the silicon wafer and the gap area between adjacent silicon wafers, thereby promoting the removal of particulate matter, processing residues, and attached contaminants from the surface of the silicon wafer and improving the overall cleaning uniformity and cleaning effect of the silicon wafer.

[0034] The silicon wafer cleaning apparatus in this embodiment, by incorporating a swinging component 340 linked to the second cleaning column 330 and utilizing the rising bubbles generated by the bubbling assembly 200 as a driving force, causes the second cleaning column 330 to move multiple silicon wafers 001 to be cleaned in the cleaning solution for swing cleaning. Without requiring an additional power mechanism, dynamic contact between the silicon wafers and the cleaning solution is achieved, which improves the cleaning solution exchange efficiency, enhances the desorption capacity of contaminants, and improves the cleaning quality of the silicon wafers.

[0035] In one embodiment of this disclosure, please refer to Figure 6 and Figure 7 The swing groove 311 is provided with a first groove wall 3111 and a second groove wall 3112 at intervals. Both the first groove wall 3111 and the second groove wall 3112 are arc-shaped surfaces and are arranged opposite to each other. The end of the second cleaning column 330 passes through the swing groove 311. When the swing member 340 is in the initial state, the end of the second cleaning column 330 is in contact with the first groove wall 3111, and a gap is formed between the end of the second cleaning column 330 and the second groove wall 3112.

[0036] Since both the first tank wall 3111 and the second tank wall 3112 adopt an arc-shaped surface structure, the second cleaning column 330 can move along an arc-shaped trajectory during the oscillation process. When the rising bubbles generated by the bubbling assembly 200 impact the oscillating member 340, the oscillating member 340 drives the second cleaning column 330 to oscillate, and the end of the second cleaning column 330 moves along the first tank wall 3111 towards the second tank wall 3112. As the oscillation amplitude gradually increases, the end of the second cleaning column 330 can gradually approach the second tank wall 3112 and move within a preset oscillation range.

[0037] The first tank wall 3111 and the second tank wall 3112 not only provide guidance for the second cleaning column 330, but also limit the swing trajectory of the second cleaning column 330, making its movement more stable. At the same time, the gap between the second tank wall 3112 and the second cleaning column 330 provides sufficient swing space for the second cleaning column 330, thereby increasing the swing amplitude of the silicon wafer 001 to be cleaned, enhancing the relative flow between the silicon wafer and the cleaning solution, and improving the cleaning effect.

[0038] Based on the above embodiments, please continue to refer to Figure 6 and Figure 7 The swing groove 311 is further provided with a first limiting plane 3113 and a second limiting plane 3114. The first limiting plane 3113 is connected to the same end of the first groove wall 3111 and the second groove wall 3112, respectively, and the second limiting plane 3114 is connected to the other same end of the first groove wall 3111 and the second groove wall 3112, respectively. The first groove wall 3111, the second groove wall 3112, the first limiting plane 3113, and the second limiting plane 3114 together form the swing groove 311.

[0039] When the second cleaning column 330 swings under the action of the swing member 340, the end of the second cleaning column 330 moves along the area between the first tank wall 3111 and the second tank wall 3112. When the second cleaning column 330 swings to its limit position, its end can abut against the first limiting plane 3113 or the second limiting plane 3114, thereby restricting the second cleaning column 330 from continuing to swing.

[0040] By setting the first limiting plane 3113 and the second limiting plane 3114, the maximum swing stroke of the second cleaning column 330 can be limited, preventing the second cleaning column 330 from detaching from the swing groove 311 or interfering with the cleaning plate 310 due to excessive swing amplitude. At the same time, the first limiting plane 3113 and the second limiting plane 3114 can also keep the swing amplitude of multiple silicon wafers 001 to be cleaned within a preset range, ensuring the cleaning effect while reducing the risk of collision between silicon wafers, thereby improving the stability and reliability of the device during operation.

[0041] In one embodiment of this disclosure, please refer to Figure 8 Each oscillating element 340 includes a first oscillating plate 341 and a second oscillating plate 342. One end of the first oscillating plate 341 is hinged to the cleaning plate 310, and the other end of the first oscillating plate 341 is hinged to the second oscillating plate 342, which is located outside the cleaning plate 310. At least one second cleaning column 330 has its two ends connected to the corresponding second oscillating plate 342, thereby forming a linkage structure between the second cleaning column 330 and the oscillating element 340. The first oscillating plate 341 is located in the bubble rising path. When the bubble contacts the first oscillating plate 341, it generates a thrust, thereby driving the oscillating element 340 to oscillate.

[0042] When the rising bubbles generated by the bubbling assembly 200 impact the oscillating member 340, the first oscillating plate 341 can oscillate around its hinge position with the cleaning plate 310, and drive the second oscillating plate 342 to move synchronously. Since the second cleaning column 330 is connected to the second oscillating plate 342, the movement of the second oscillating plate 342 can drive the second cleaning column 330 to oscillate synchronously, thereby causing the multiple silicon wafers 001 to be cleaned supported between the first cleaning column 320 and the second cleaning column 330 to oscillate synchronously.

[0043] By configuring the oscillating element 340 as a combination of the first oscillating plate 341 and the second oscillating plate 342, the movement flexibility of the oscillating element 340 can be improved, allowing the impact force of the bubbles generated by the bubbling assembly 200 to be more effectively transmitted to the second cleaning column 330. Simultaneously, the formation of a multi-stage oscillation structure between the first oscillating plate 341 and the second oscillating plate 342 helps improve the oscillation stability of the second cleaning column 330, thereby ensuring that the multiple silicon wafers 001 to be cleaned maintain oscillation during the cleaning process.

[0044] Based on the above embodiments, please continue to refer to Figure 8 The outer wall of the second swing plate 342 is provided with a second hinge shaft 3421, which is eccentrically positioned relative to the center of the second swing plate 342. A second hinge hole 3412 is provided through the first swing plate 341, and the second hinge shaft 3421 is rotatably disposed within the second hinge hole 3412 to achieve a rotatable connection between the first swing plate 341 and the second swing plate 342.

[0045] Because the second hinge shaft 3421 is eccentrically arranged relative to the center of the second swing plate 342, during the swinging process of the first swing plate 341, the second swing plate 342 can not only rotate but also produce a certain degree of offset motion. When the rising bubbles continuously impact the swing member 340, the first swing plate 341 drives the second hinge shaft 3421 to move, and the second hinge shaft 3421 then drives the second swing plate 342 to swing, thereby enabling the second cleaning column 330 to obtain a larger swing stroke. The second hinge shaft 3421 is offset from the geometric center of the second swing plate 342 to form an eccentric driving torque during the swinging process, thereby increasing the swing displacement of the second swing plate 342 and the second cleaning column 330.

[0046] By employing an eccentrically positioned second hinge shaft 3421, the utilization efficiency of the oscillating component 340 in dealing with the impact force of air bubbles can be improved, allowing the second cleaning column 330 to generate a larger oscillation amplitude with a smaller fluid disturbance force. Simultaneously, the eccentric structure can also alter the trajectory of the second cleaning column 330, enabling the silicon wafer 001 to move more fully in the cleaning solution, thereby further improving the exchange efficiency between the cleaning solution and the silicon wafer surface.

[0047] In one embodiment of this disclosure, please refer to Figures 6 to 8 The two first cleaning columns 320 are at the same height, and the two second cleaning columns 330 are at the same height to ensure that the multiple silicon wafers 001 to be cleaned remain stably supported after installation. The first swing plate 341 is arranged vertically, and the outer wall of the cleaning plate 310 is provided with a first hinge shaft 312. The first swing plate 341 is provided with a first hinge hole 3411 that rotatably engages with the first hinge shaft 312.

[0048] During assembly, the first hinge shaft 312 is inserted into the first hinge hole 3411, thereby enabling the first swing plate 341 to swing relative to the cleaning plate 310. The swing direction of the first swing plate 341 corresponds to the swing direction of the second cleaning column 330. When the rising bubbles generated by the bubbling assembly 200 impact the swing member 340, the first swing plate 341 can reciprocate around the first hinge shaft 312 and transmit the motion to the second swing plate 342 and the second cleaning column 330.

[0049] The first hinge shaft 312 and the first hinge hole 3411 provide a stable and reliable rotation fulcrum for the oscillating component 340, ensuring good motion stability during long-term operation. Simultaneously, the vertical orientation of the first oscillating plate 341 increases the contact area between the oscillating component 340 and the rising air bubbles, making it easier for the impact force generated by the bubbles to act on the oscillating component 340, thereby improving the oscillation effect of the second cleaning column 330 and the silicon wafer 001 to be cleaned.

[0050] In one embodiment of this disclosure, please refer to Figure 8 The second swing plate 342 is provided with a swing hole 3422, which can be connected to an external swing robot. The external swing robot drives the second swing plate 342 to move, thereby causing the second cleaning column 330 to move, which in turn causes the silicon wafer 001 to be cleaned to shift.

[0051] In one embodiment of this disclosure, please refer to Figure 9 The first cleaning column 320 has multiple first columns 321 arranged at intervals along its length, and the second cleaning column 330 has multiple second columns 331 arranged at intervals along its length. A first supporting inclined surface 3211 is provided on the first column 321 closest to the cleaning plate 310, and two first supporting inclined surfaces 3211 are arranged at intervals on the same first column 321 located inside the first cleaning column 320. A second supporting inclined surface 3311 is provided on the second column 331 closest to the cleaning plate 310, and two second supporting inclined surfaces 3311 are arranged at intervals on the same second column 331 located inside the second cleaning column 330.

[0052] Two adjacent first support slopes 3211 and two adjacent second support slopes 3311 together form a support area for supporting the silicon wafer 001 to be cleaned. When the silicon wafer 001 to be cleaned is mounted on the cleaning fixture 300, the edge portion of the silicon wafer 001 to be cleaned makes line contact with the corresponding first support slope 3211 and second support slope 3311, thereby achieving the support and positioning of the silicon wafer 001 to be cleaned.

[0053] Since both the first cleaning column 320 and the second cleaning column 330 are segmented into multiple columns, a fluid flow space is formed between adjacent columns. During the cleaning process, the cleaning fluid and the bubbles generated by the bubbling assembly 200 can flow through the aforementioned flow space to the edge area of ​​the silicon wafer 001 to be cleaned and the gap area between adjacent silicon wafers, thereby enhancing the liquid exchange capacity of the local area.

[0054] Meanwhile, the first support slope 3211 and the second support slope 3311 can guide and position the silicon wafer 001 to be cleaned, causing it to automatically move to the preset position during installation, reducing the difficulty of wafer mounting. When the second cleaning column 330 swings under the action of the swinging component 340, the first support slope 3211 and the second support slope 3311 can also provide stable support for the silicon wafer 001 to be cleaned, ensuring that multiple silicon wafers 001 to be cleaned swing synchronously, thereby improving the cleaning uniformity of the silicon wafer surface.

[0055] Based on the above embodiments, please continue to refer to Figure 9Both the first support slope 3211 and the second support slope 3311 are tapered slope structures. Every two first support slopes 3211 are connected to form a recessed support portion, and every two second support slopes 3311 are connected to form a recessed support portion. The first support slopes 3211 and the second support slopes 3311 together form a support recess for accommodating the edge of the silicon wafer, so as to prevent the silicon wafer from falling out of the cleaning fixture 300.

[0056] By adopting a tapered inclined plane structure, a smaller contact area is formed between the silicon wafer 001 to be cleaned and the first cleaning pillar 320 and the second cleaning pillar 330, thereby reducing the contact area between the silicon wafer 001 to be cleaned and the cleaning fixture 300. Compared with a planar support structure, this reduces the obstruction of the contact position to the flow of cleaning fluid, making it easier for the cleaning fluid to reach the edge area of ​​the silicon wafer and improving the cleaning effect of the edge area.

[0057] The first column 321 near the cleaning plate 310 has a first abutment surface 3212, and the second column 331 near the cleaning plate 310 has a second abutment surface 3312. The first abutment surface 3212 abuts against the corresponding cleaning plate 310, and the second abutment surface 3312 abuts against the corresponding cleaning plate 310, so as to achieve the axial positioning and installation of the first column 321 and the second column 331.

[0058] By setting the first abutment plane 3212 and the second abutment plane 3312, not only can the assembly stability between the first cleaning column 320 and the second cleaning column 330 and the cleaning plate 310 be improved, but the accurate positional relationship of the multiple first support slopes 3211 and the second support slopes 3311 can also be ensured, thereby ensuring that the spacing of the multiple silicon wafers 001 to be cleaned is consistent after installation. At the same time, the tapered slope structure can reduce the contact resistance during the swinging process of the silicon wafers 001 to be cleaned, making the swinging of the silicon wafers 001 driven by the second cleaning column 330 smoother, further improving the exchange efficiency of the cleaning fluid with the silicon wafer surface and the cleaning effect.

[0059] In one embodiment of this disclosure, please refer to Figures 1 to 4 The cleaning fixture 300 also includes a cleaning basket 350, which is used to carry the cleaning fixture 300 and cooperate with external equipment to complete the transfer operation. The cleaning basket 350 has an inclined positioning strip 351 inside, and the bottom of the cleaning plate 310 has a positioning groove 313 that positions and cooperates with the positioning strip 351. In this embodiment, multiple mounting plates 160 are fixedly installed inside the cleaning box 100, and the cleaning basket 350 overlaps the mounting plates 160.

[0060] During assembly, the cleaning fixture 300 is placed from top to bottom inside the cleaning basket 350, and the positioning strip 351 is inserted into the corresponding positioning groove 313, thereby achieving positioning and engagement between the cleaning fixture 300 and the cleaning basket 350. Since the positioning strip 351 is set at an angle, after the positioning strip 351 enters the positioning groove 313, the cleaning fixture 300 can move along the angle of the positioning strip 351 under its own gravity until it reaches the preset installation position.

[0061] By setting the positioning strip 351 and the positioning groove 313, the cleaning fixture 300 can be quickly positioned and installed within the cleaning basket 350, preventing the cleaning fixture 300 from shifting position during handling or cleaning. At the same time, the inclined positioning strip 351 can also utilize gravity to improve positioning reliability and reduce assembly errors.

[0062] The cleaning basket 350 is equipped with a positioning hook 352 on its top, which is used to engage with an external robotic arm. When the cleaning fixture 300 needs to be placed into or removed from the cleaning tank 110, the robotic arm can connect with the positioning hook 352 and drive the cleaning basket 350 to move up and down as a whole.

[0063] By setting the positioning hook 352, the cleaning fixture 300 and multiple silicon wafers 001 to be cleaned can be transferred as a whole, reducing the risk of contact during manual operation and improving the automation level and production efficiency of the silicon wafer cleaning process.

[0064] In one embodiment of this disclosure, please refer to Figure 2 and Figure 10 The bubbling assembly 200 includes a bubbling tube 210, which is disposed in the bottom region of the cleaning tank 110 so that the generated bubbles can pass through the cleaning liquid from bottom to top and act on the oscillating member 340. In this embodiment, a positioning plate 150 is fixedly connected inside the cleaning tank 110, and the bubbling tube 210 is securely inserted into the positioning plate 150.

[0065] The bubbling tube 210 has an open end and a closed end. The open end is used to connect to an external gas supply device, through which external gas enters the bubbling tube 210. The outer wall of the bubbling tube 210 has multiple bubbling ports 211, which are arranged at linear intervals along the length of the bubbling tube 210.

[0066] When gas enters the bubbling tube 210, it is evenly released into the cleaning fluid through multiple bubbling ports 211, thereby forming a large number of rising bubbles. Since the multiple bubbling ports 211 are distributed at intervals along a straight line, a relatively uniform bubble distribution area can be formed along the length of the bubbling tube 210, allowing the bubbles to act on the areas where multiple silicon wafers 001 to be cleaned are located.

[0067] By setting multiple bubble outlets 211, the uniformity of bubble distribution within the cleaning tank 110 can be improved, avoiding the problem of excessive bubble concentration in some areas and insufficient bubbles in others. Simultaneously, the rising bubbles, while disturbing the cleaning fluid, can also continuously impact the oscillating component 340, thereby driving the second cleaning column 330 and the silicon wafer 001 to be cleaned to oscillate, improving the cleaning effect of the silicon wafer.

[0068] Based on the above embodiments, please continue to refer to Figure 2 and Figure 10 The number of bubble tubes 210 is set to multiple, and the multiple bubble tubes 210 are arranged in parallel at intervals within the cleaning tank 110. The multiple bubble tubes 210 are distributed along the length of the cleaning fixture 300 so that different areas can obtain a stable supply of bubbles.

[0069] One of the bubble tubes 210 has its open end extending out of the cleaning tank 110 and connected to an external air supply device. Adjacent bubble tubes 210 are connected by a connecting pipe 220. The gas supplied by the external air supply device first enters one of the bubble tubes 210, and then is delivered to the remaining bubble tubes 210 through the connecting pipe 220, thereby achieving synchronous air supply to multiple bubble tubes 210.

[0070] During operation, multiple bubbling tubes 210 can simultaneously release bubbles into the cleaning solution, creating a larger bubbling area within the cleaning tank 110. Because the multiple bubbling tubes 210 are arranged in parallel and spaced intervals, the problem of uneven bubble distribution is reduced, ensuring that all silicon wafers 001 to be cleaned are subjected to bubble disturbance.

[0071] By setting multiple bubbling tubes 210 and connecting pipes 220, not only can the uniformity of air supply to the bubbling assembly 200 be improved, but the number of air supply interfaces can also be reduced, simplifying the air supply pipeline structure. At the same time, the bubble flow formed by the multiple bubbling tubes 210 can continuously impact the oscillating component 340, causing the second cleaning column 330 to drive multiple silicon wafers 001 to be cleaned to oscillate synchronously, thereby further enhancing the fluid exchange capacity between the cleaning fluid and the silicon wafer surface, and improving the overall cleaning uniformity and cleaning efficiency of the silicon wafers.

[0072] In one embodiment of this disclosure, please refer to Figure 1 and Figure 2 The cleaning tank 100 is equipped with a partition 120, which divides the internal space of the cleaning tank 100 into two independent cleaning tanks 110. The two cleaning tanks 110 are used to hold different cleaning solutions or to perform different stages of cleaning processes.

[0073] In this embodiment, one cleaning tank 110 can be used to hold a mixed acid cleaning solution for acid washing of the silicon wafer 001 to be cleaned; the other cleaning tank 110 can be used to hold deionized water or other rinsing solution for rinsing the silicon wafer 001 to be cleaned after acid washing. Of course, in other embodiments, the two cleaning tanks 110 can also be set as cleaning areas with different functions according to actual process requirements, and this disclosure does not limit this.

[0074] Because the partition 120 isolates the two cleaning tanks 110 from each other, it prevents the mixing of different cleaning solutions and ensures the independence of each cleaning process. At the same time, by setting up multiple cleaning tanks 110, the number of times the cleaning fixture 300 is transferred between different devices can be reduced, thereby improving the overall cleaning efficiency.

[0075] The bottom of the cleaning tank 100 is equipped with a drain pipe 130 that communicates with each cleaning tank 110. The drain pipe 130 is used to drain the cleaning fluid from the corresponding cleaning tank 110. When it is necessary to replace the cleaning fluid or to perform maintenance and cleaning on the cleaning tank 110, the liquid in the tank can be quickly drained through the drain pipe 130, thereby improving the convenience of equipment maintenance.

[0076] In addition, an overflow pipe 140 is installed on the cleaning tank 100, which is connected to the corresponding cleaning tank 110. When the liquid level in the cleaning tank 110 rises to a preset height, excess cleaning fluid can be discharged through the overflow pipe 140 to maintain the stability of the liquid level in the cleaning tank 110.

[0077] During the cleaning process, the bubbling assembly 200 continuously introduces gas into the cleaning fluid, causing fluid flow and level fluctuations. The overflow pipe 140 prevents excessive fluid level and overflow, while ensuring that the multiple silicon wafers 001 to be cleaned remain stably submerged. The drain pipe 130 and overflow pipe 140 work together to improve cleaning fluid management efficiency and maintain a stable working environment within the cleaning tank 110, thus ensuring the continuity and quality of the silicon wafer cleaning process.

[0078] Furthermore, in this embodiment, the cleaning tank 100 may also be provided with a positioning plate 150 for mounting the bubbling assembly 200 and a mounting plate 160 for supporting the cleaning basket 350. The positioning plate 150 is used to position and install the bubbling tubes 210 to ensure that the multiple bubbling tubes 210 maintain a stable arrangement; the mounting plate 160 is used to support the cleaning basket 350 so that the cleaning fixture 300 can be stably suspended in the cleaning tank 110, thereby ensuring that the rising bubbles generated by the bubbling assembly 200 can continuously act on the oscillating member 340 to achieve oscillating cleaning of multiple silicon wafers 001 to be cleaned.

[0079] Please see Figure 11This disclosure also provides a silicon wafer cleaning method, applied to the silicon wafer cleaning apparatus in any of the above embodiments, the method comprising the following steps: Step S1: Multiple silicon wafers 001 to be cleaned are supported at intervals between the first cleaning column 320 and the second cleaning column 330, and the cleaning fixture 300 is placed in the cleaning tank 110 so that the multiple silicon wafers 001 to be cleaned are immersed in the cleaning solution.

[0080] Specifically, the silicon wafers 001 to be cleaned can be silicon wafers that have undergone cutting, grinding, polishing, or etching processes. During installation, multiple silicon wafers 001 to be cleaned are sequentially and spaced apart between the first cleaning column 320 and the second cleaning column 330, with a preset distance maintained between adjacent silicon wafers 001 to ensure that the cleaning solution can enter the inter-wafer area. Subsequently, a cleaning basket 350 containing the silicon wafers 001 to be cleaned is placed in the cleaning tank 110 by a robotic arm in cooperation with a positioning hook 352, so that the multiple silicon wafers 001 to be cleaned are completely immersed in the cleaning solution.

[0081] Step S2: Start the bubbling assembly 200 and continuously introduce gas into the cleaning solution, so that the bubbles move from bottom to top and impact the oscillating component 340. The oscillating component 340 drives the second cleaning column 330 to oscillate back and forth, so as to drive multiple silicon wafers 001 to be cleaned to oscillate synchronously in the cleaning solution.

[0082] Specifically, an external gas supply device delivers gas into the bubbling tube 210, and the gas is released into the cleaning fluid through multiple bubbling ports 211, forming a large number of rising bubbles. As the rising bubbles pass through the cleaning fluid, they continuously impact the oscillating member 340, causing it to oscillate around its hinged position. The oscillation of the oscillating member 340 drives the second cleaning column 330 to oscillate synchronously. Since multiple silicon wafers 001 to be cleaned are supported between the first cleaning column 320 and the second cleaning column 330, the multiple silicon wafers 001 to be cleaned can oscillate synchronously in the cleaning fluid.

[0083] In some embodiments, the second cleaning column 330 swings under the guidance of the swing groove 311. The first groove wall 3111 and the second groove wall 3112 can limit the movement trajectory of the second cleaning column 330. The first limiting plane 3113 and the second limiting plane 3114 can control the swing range of the second cleaning column 330, thereby ensuring that the multiple silicon wafers 001 to be cleaned maintain stable swing.

[0084] Step S3: During the silicon wafer oscillation process, the silicon wafer surface is cleaned with a cleaning solution, so that the silicon wafer surface and the cleaning solution form a dynamic flow contact. The surface contaminants are desorbed by the bubble disturbance and the silicon wafer oscillation, thus completing the silicon wafer cleaning.

[0085] Specifically, when multiple silicon wafers 001 to be cleaned continuously oscillate in the cleaning solution, a continuously changing relative motion state is formed between the silicon wafer surface and the surrounding cleaning solution, causing the cleaning solution on the silicon wafer surface, silicon wafer edges, and areas between adjacent silicon wafers to be constantly renewed. At the same time, the bubble flow generated by the bubbling assembly 200 continuously disturbs the cleaning solution, further enhancing the flowability of the cleaning solution near the silicon wafer surface.

[0086] Under the combined effect described above, particulate matter, processing residues, metal ion contaminants, and other impurities adhering to the silicon wafer surface can more easily detach from the silicon wafer surface and diffuse into the cleaning solution, thereby improving the cleaning solution's efficiency in removing contaminants. After the preset cleaning time is reached, the bubbling assembly 200 is stopped, and the cleaning fixture 300 is removed from the cleaning tank 110, completing the silicon wafer cleaning process.

[0087] The silicon wafer cleaning method in this embodiment utilizes rising bubbles generated by the bubbling assembly 200 to drive the second cleaning column 330 to oscillate, causing multiple silicon wafers 001 to be cleaned to form a dynamic oscillating state in the cleaning solution. Compared with the traditional static immersion cleaning method, this significantly enhances the fluid exchange capacity between the silicon wafer surface and the cleaning solution, reduces fluid retention in inter-wafer and edge areas, improves contaminant desorption efficiency and cleaning uniformity, thereby achieving better silicon wafer cleaning results.

[0088] In one specific embodiment of this disclosure, the bubbling assembly 200 uses compressed air as the air source, and an external air supply device is connected to the bubbling tube 210 through a pipeline and continuously supplies gas into the bubbling tube 210.

[0089] Preferably, the air supply pressure is 0.01MPa~0.15MPa, more preferably 0.03MPa~0.08MPa; the total air supply flow rate of the bubbling assembly 200 is 5L / min~80L / min, more preferably 10L / min~40L / min. The diameter of the bubbling port 211 on the bubbling tube 210 is 0.3mm~3mm, preferably 0.5mm~1.5mm. By setting the above parameters, a continuous and uniformly distributed bubble flow can be formed in the cleaning tank 110, and the bubbles can be continuously applied to the oscillating component 340.

[0090] In this embodiment, a plurality of silicon wafers 001 to be cleaned are supported at intervals between the first cleaning post 320 and the second cleaning post 330, and the spacing between two adjacent silicon wafers 001 to be cleaned is 3mm to 10mm, preferably 5mm to 8mm.

[0091] When the distance between adjacent silicon wafers is less than 3mm, the inter-wafer flow channel space is small, the cleaning fluid renewal efficiency decreases, and edge interference risk is easily generated during the silicon wafer oscillation process. When the distance between adjacent silicon wafers is greater than 10mm, although the flow resistance can be further reduced, the number of wafers loaded per unit cleaning fixture will be significantly reduced, which is not conducive to improving the cleaning efficiency of batch silicon wafers.

[0092] Therefore, by adopting the above-mentioned spacing range, it is possible to ensure that the bubbles generated by bubbling and the cleaning fluid can smoothly enter the area between adjacent silicon wafers, while also taking into account the loading density and swing safety, thereby improving the cleaning effect of the edge area of ​​the silicon wafer and the inter-wafer area.

[0093] During the operation of the bubbling assembly 200, the rising bubbles continuously impact the oscillating component 340, causing the oscillating component 340 to drive the second cleaning column 330 to reciprocate, thereby driving multiple silicon wafers 001 to be cleaned to oscillate synchronously. Preferably, the oscillation angle of the silicon wafer relative to its initial position is 1°~8°, more preferably 2°~5°; the oscillation frequency is 0.1Hz~5Hz, more preferably 0.5Hz~2Hz.

[0094] When the swing angle is less than 1°, the relative flow between the silicon wafer surface and the cleaning solution is weak, making it difficult to effectively improve the liquid exchange efficiency in the inter-wafer and edge regions. When the swing angle is greater than 8°, the swing amplitude of the silicon wafer increases significantly, which can easily increase the risk of interference between the edges of the silicon wafer and affect the stability of the wafer assembly.

[0095] Therefore, by adopting the above-mentioned swing range, it is possible to effectively break the boundary layer on the silicon wafer surface and promote the renewal of the cleaning solution, while ensuring that there is a sufficient safety gap between adjacent silicon wafers, thus balancing the cleaning effect and the safety of the silicon wafer.

[0096] Furthermore, during the silicon wafer oscillation process, periodic fluid disturbances are generated near the silicon wafer surface, causing continuous disruption and renewal of the silicon wafer surface boundary layer. This facilitates the entry of the cleaning solution into the edge region of the silicon wafer and the gap region between adjacent silicon wafers. Compared with traditional fixed immersion cleaning methods, this significantly reduces the fluid retention area and increases the diffusion and migration rate of contaminants into the cleaning solution.

[0097] In this embodiment, the cleaning solution can be a hydrofluoric acid solution, a mixture of hydrofluoric acid and nitric acid, a mixture of hydrofluoric acid and hydrochloric acid, deionized water, or an alkaline cleaning solution. The temperature of the cleaning solution is 15℃~80℃, preferably 20℃~50℃. The cleaning time is 30 seconds~30 minutes, preferably 2 minutes~10 minutes.

[0098] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the following claims.

[0099] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is limited only by the appended claims.

Claims

1. A silicon wafer cleaning apparatus, characterized in that, The device includes a cleaning tank, which contains a cleaning trough for storing cleaning fluid. The cleaning trough contains a bubbling assembly and a cleaning fixture, the height of which is greater than the height of the bubbling assembly. The cleaning fixture includes two cleaning plates arranged opposite each other, with two first cleaning columns and two second cleaning columns provided between the two cleaning plates. The height of the second cleaning columns is higher than the height of the first cleaning columns, and the distance between the two first cleaning columns is smaller than the distance between the two second cleaning columns. Each of the cleaning plates is hinged to the outside of a swinging member, and each cleaning plate is provided with a through swinging groove. Each end of at least one of the second cleaning columns passes through the corresponding swinging groove and is connected to the swinging member. Both the first and second cleaning columns are used to support multiple silicon wafers to be cleaned at intervals. The bubbling assembly is used to provide rising air bubbles to the cleaning liquid in the cleaning tank. The rising air bubbles impact the oscillating component. The oscillating component is used to drive the second cleaning column to oscillate, so that the silicon wafers to be cleaned are oscillated and cleaned in the cleaning tank. Each of the swinging components includes a first swing plate and a second swing plate, one end of the first swing plate is hinged to the cleaning plate, the other end of the first swing plate is hinged to the second swing plate, and each end of at least one of the second cleaning columns is inserted into the second swing plate.

2. The silicon wafer cleaning apparatus according to claim 1, characterized in that, The swing groove is provided with a first groove wall and a second groove wall that are respectively arranged in an arc shape. When the swing member is not swinging, the end of the second cleaning column is in contact with the first groove wall, and the end of the second cleaning column is separated from the second groove wall.

3. The silicon wafer cleaning apparatus according to claim 2, characterized in that, The swing groove is provided with a first limiting plane and a second limiting plane opposite to each other. The first limiting plane is connected to the same end of the first groove wall and the second groove wall, respectively, and the second limiting plane is connected to the other same end of the first groove wall and the second groove wall, respectively.

4. The silicon wafer cleaning apparatus according to claim 1 or 2, characterized in that, The outer wall of the second swing plate is provided with a second hinge shaft, which is eccentrically positioned relative to the center of the second swing plate. The first swing plate is provided with a second hinge hole that rotatably engages with the second hinge shaft.

5. The silicon wafer cleaning apparatus according to claim 1, characterized in that, The two first cleaning columns are at the same height, and the two second cleaning columns are at the same height; the first swing plate is arranged vertically, the outer wall of the cleaning plate is provided with a first hinge shaft, and the first swing plate is provided with a first hinge hole that rotatably engages with the first hinge shaft.

6. The silicon wafer cleaning apparatus according to claim 1, characterized in that, The first cleaning column is provided with a plurality of first columns, and the first column near the cleaning plate is provided with a first supporting inclined surface. Two first supporting inclined surfaces are provided at relative intervals on the same first column located inside the first cleaning column. The second cleaning column is provided with multiple second columns, and the second column near the cleaning plate is provided with a second supporting inclined surface. Two second supporting inclined surfaces are provided at relative intervals on the same second column located inside the second cleaning column. The two adjacent first support ramps and the two adjacent second support ramps are used together to support the silicon wafer to be cleaned.

7. The silicon wafer cleaning apparatus according to claim 6, characterized in that, Both the first and second support inclined surfaces are conical inclined surfaces, with every two first support inclined surfaces connected together and every two second support inclined surfaces connected together; The first column near the cleaning plate has a first abutting surface that abuts against the cleaning plate, and the second column near the cleaning plate has a second abutting surface that abuts against the cleaning plate.

8. The silicon wafer cleaning apparatus according to claim 1, characterized in that, The cleaning fixture also includes a cleaning basket, which has an inclined positioning strip inside. The bottom of the cleaning plate has a positioning groove that positions and engages with the positioning strip. The top of the cleaning basket has a positioning hook for engaging with an external robotic arm.

9. The silicon wafer cleaning apparatus according to claim 1, characterized in that, The bubbling assembly includes a bubbling tube, one end of which is an open end and the other end of which is a closed end. The outer wall of the bubbling tube has multiple bubbling openings arranged at intervals along a straight line.

10. The silicon wafer cleaning apparatus according to claim 9, characterized in that, The number of bubble tubes is set to multiple, and the multiple bubble tubes are arranged in parallel and spaced apart in the cleaning tank; One of the bubble tubes has its open end protruding from the cleaning tank, and two adjacent bubble tubes are connected by a connecting pipe.

11. The silicon wafer cleaning apparatus according to claim 1, characterized in that, The cleaning tank is equipped with a partition to separate the two cleaning tanks. The bottom of the cleaning tank is equipped with a drain pipe that communicates with each of the cleaning tanks. An overflow pipe is also installed on the cleaning tank.

12. A silicon wafer cleaning method, applied to the silicon wafer cleaning apparatus as described in any one of claims 1 to 11, characterized in that, include: Step S1: Support multiple silicon wafers to be cleaned at intervals on the first and second cleaning columns, and place the cleaning fixture in the cleaning tank so that the silicon wafers are immersed in the cleaning solution; Step S2: Start the bubbling assembly and continuously introduce gas into the cleaning solution, so that the bubbles move from bottom to top and impact the oscillating component. The oscillating component drives the second cleaning column to oscillate back and forth, so as to drive multiple silicon wafers to oscillate synchronously in the cleaning solution. Step S3: During the silicon wafer oscillation process, the silicon wafer surface is cleaned with a cleaning solution, so that the silicon wafer surface and the cleaning solution form a dynamic flow contact. The surface contaminants are desorbed by the bubble disturbance and the silicon wafer oscillation, thus completing the silicon wafer cleaning.

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