Semiconductor process apparatus and wafer inspection method

Abstract

The application provides a semiconductor process equipment and a wafer detection method. The semiconductor process equipment comprises: a process chamber; a bearing device arranged in the process chamber; a plurality of first sensors arranged at the top of the process chamber, the projection of the first sensors on the plane of the bearing surface of the bearing device is located on a target circle with the center of the bearing device as the center, and the target circle is distributed along the target circle, the radius of the target circle is greater than or equal to the radius of the bearing surface of the bearing device and less than the radius of the wafer, and the first sensors are used for detecting the thickness of the wafer at the position opposite to the first sensors; a processing device is used for judging whether the wafer has a position deviation according to the thickness difference detected by each first sensor at the same time; and / or determining the temperature of the position of the wafer relative to the target circle according to the difference between the thickness detected by each first sensor during the process and the thickness detected before the process starts, and the relationship between the thickness change amount of the wafer and the temperature obtained in advance.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more specifically to a semiconductor process equipment and a wafer inspection method. Background Technology

[0002] In plasma etching, the wafer is typically placed on an electrostatic chuck (ESC) in the process chamber of a semiconductor processing equipment, with a focusing ring positioned around the wafer before further processing.

[0003] In the process, the wafer, focusing ring, and electrostatic chuck are concentrically positioned, with a certain distance between each point on the wafer edge and the focusing ring. However, during wafer placement, the robotic arm first places the wafer on multiple raised support pins, which then descend, allowing the wafer to land on the electrostatic chuck. Due to height variations among the support pins, the wafer may become off-center upon landing. This off-center placement can cause a point on the wafer edge to become too close to or even in contact with the electrostatic chuck, resulting in an electric arc and affecting the chuck. Furthermore, during the process, the wafer temperature affects the deposits on the wafer surface, thus influencing the etched shape.

[0004] Therefore, how to accurately detect whether wafers are misaligned, and how to monitor wafer temperature during the process, are technical problems that urgently need to be solved in this field. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and wafer inspection method.

[0006] To achieve the above objectives, the present invention provides a semiconductor process apparatus, comprising:

[0007] Process chambers;

[0008] A support device disposed within the process chamber, the support device being used to support the wafer;

[0009] Multiple first sensors are located at the top of the process chamber. The projection of the first sensors onto the plane of the support surface of the support device is located on a target circumference centered on the center of the support device, and is distributed along the target circumference. The radius of the target circumference is greater than or equal to the radius of the support surface of the support device and less than the radius of the wafer. The first sensors are used to detect the thickness of the wafer at the position directly opposite the first sensor.

[0010] A processing device electrically connected to a plurality of the first sensors, used to determine whether the wafer has shifted position based on the thickness difference detected by each of the first sensors at the same time; and / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the wafer thickness change and temperature, to determine the temperature of the position of the wafer relative to the target circumference.

[0011] In some embodiments, the radius of the target circumference is greater than or equal to R-0.5 mm and less than R, where R is the radius of the wafer.

[0012] This invention provides a semiconductor process apparatus, comprising:

[0013] Process chambers;

[0014] A support device disposed within the process chamber is used to support a wafer; the wafer includes a plurality of thickness variation portions arranged circumferentially thereon; the thickness of the thickness variation portions gradually increases or decreases in a direction away from the center of the wafer; among the plurality of thickness variation portions, any two positions at the same distance from the center of the wafer have the same thickness;

[0015] Multiple first sensors are located at the top of the process chamber. The projection of the first sensor onto the plane of the support surface of the support device is located on a target circumference centered on the center of the support device, and is disposed opposite to the thickness change part. The first sensor is used to detect the thickness of the wafer at the position directly opposite the first sensor.

[0016] A processing device electrically connected to a plurality of the first sensors, used to determine whether the wafer has shifted position based on the thickness difference detected by each of the first sensors at the same time; and / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the wafer thickness change and temperature, to determine the temperature of the relative position of the wafer and the target circumference.

[0017] In some embodiments, the processing apparatus is configured to determine the temperature of the relative position of the wafer and the target circumference when determining the temperature of the wafer relative to the target circumference, based on the difference between the thickness detected by each first sensor during the process and the thickness detected before the start of the process, and the relationship between the thickness change and the temperature, and to take the average temperature of the multiple detection points as the temperature of the relative position of the wafer and the target circumference.

[0018] In some embodiments, the process chamber includes: a cavity having a top opening, and a top cover assembly for closing the top opening of the cavity; the top cover assembly has a first light-transmitting hole, the first sensor is a laser sensor disposed on the side of the top cover assembly away from the support device, and the laser emitted by the first sensor can pass through the first light-transmitting hole.

[0019] The top cover assembly is further provided with a first light-transmitting plate on the side away from the supporting device, and the first light-transmitting plate is used to close the first light-transmitting hole.

[0020] In some embodiments, the semiconductor process equipment further includes:

[0021] A focusing ring is provided around the bearing surface of the bearing device. The focusing ring has at least one test area, wherein the test area has multiple different thicknesses along the radial direction of the focusing ring, and in each test area, the thickness is the same at any two positions at the same distance from the center of the focusing ring.

[0022] Multiple second sensors are located at the top of the process chamber. The multiple second sensors are equidistant from the central axis of the support device and are arranged opposite to the area to be tested. The second sensors are used to detect the thickness of the area to be tested at the position directly opposite the second sensor.

[0023] The processing device is electrically connected to the second sensor and is also used to determine whether the focusing ring has shifted position based on the thickness detected by each of the second sensors.

[0024] In some embodiments, the focusing ring has a plurality of test areas, which are evenly distributed along the circumference of the focusing ring; the second sensor is configured to correspond one-to-one with each of the test areas;

[0025] Alternatively, the focusing ring may have a test area that is annular, and a plurality of second sensors may be uniformly distributed along the circumference of the focusing ring.

[0026] In some embodiments, the process chamber includes: a cavity with a top opening, and a top cover assembly for closing the top opening of the cavity; the top cover assembly has a second light-transmitting hole, the second sensor is a laser sensor disposed on the side of the top cover assembly away from the support device, and the laser emitted by the second sensor can pass through the second light-transmitting hole;

[0027] A second light-transmitting plate is provided on the side of the top cover assembly away from the supporting device, and the second light-transmitting plate is used to close the second light-transmitting hole.

[0028] In some embodiments, the process chamber includes: a cavity having a top opening and a top cover assembly, the top cover assembly including: a top cover for closing the top opening of the cavity, and a spray plate located on the side of the top cover facing the support device; a flow equalization cavity is formed inside the top cover, and spray holes communicating with the flow equalization cavity are provided on the spray plate;

[0029] The semiconductor process equipment also includes:

[0030] The third sensor, located at the top of the process chamber, is used to detect the thickness of the spray plate;

[0031] The processing device is electrically connected to the third sensor and is also used to determine the temperature of the spray plate based on the difference between the thickness detected by the third sensor during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the spray plate and the temperature.

[0032] In some embodiments, the top cover has a third light-transmitting hole, and the third sensor is a laser sensor fixed on the side of the top cover away from the supporting device, and the laser emitted by the third sensor can pass through the third light-transmitting hole;

[0033] A third light-transmitting plate is also provided on the side of the top cover assembly away from the supporting device, and the third light-transmitting plate is used to close the third light-transmitting hole.

[0034] In some embodiments, the semiconductor process equipment further includes:

[0035] The fourth sensor is located at the top of the process chamber, and the projection of the fourth sensor onto the plane of the support surface of the support device is located inside the target circumference; the fourth sensor is used to detect the thickness of the wafer at the position directly opposite the fourth sensor in real time;

[0036] The processing device is electrically connected to the fourth sensor and is also used to determine the temperature of the relative position of the wafer and the fourth sensor based on the difference between the thickness detected by the fourth sensor during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the wafer and the temperature.

[0037] In some embodiments, the process chamber includes: a cavity having a top opening, and a top cover assembly for closing the top opening of the cavity; the top cover assembly has a fourth light-transmitting hole, the fourth sensor is a laser sensor disposed on the side of the top cover assembly away from the support device, and the laser emitted by the fourth sensor can pass through the fourth light-transmitting hole;

[0038] The top cover assembly is further provided with a fourth light-transmitting plate on the side away from the supporting device, and the fourth light-transmitting plate is used to close the fourth light-transmitting hole.

[0039] The present invention also provides a wafer inspection method, comprising:

[0040] The thickness detected by multiple first sensors is obtained; wherein, the first sensors are located at the top of the process chamber, and the projection of the first sensors on the plane of the bearing surface of the bearing device is located on a target circumference with the center of the bearing device as the center, and is distributed along the target circumference. The radius of the target circumference is greater than or equal to the radius of the bearing surface of the bearing device and less than the radius of the wafer. The first sensors are used to detect the thickness of the wafer at the position directly opposite the first sensor.

[0041] Based on the thickness differences detected by each of the first sensors at the same time, it is determined whether the wafer has shifted position; and / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the wafer thickness change and temperature, the temperature of the position of the wafer relative to the target circumference is determined.

[0042] The present invention also provides a wafer inspection method, comprising:

[0043] The thickness detected by multiple first sensors is acquired; wherein, the first sensors are located at the top of the process chamber, and the projection of the first sensors on the plane of the bearing surface of the carrier device is located on a target circumference centered on the center of the carrier device; the carrier device is located inside the process chamber and is used to support the wafer; the wafer includes multiple thickness variation sections arranged circumferentially; the thickness of the thickness variation sections gradually increases or decreases in a direction away from the center of the wafer; among the multiple thickness variation sections, any two positions at the same distance from the center of the wafer have the same thickness; the first sensors are arranged opposite to the thickness variation sections and are used to detect the thickness of the position on the wafer directly opposite the first sensor;

[0044] Based on the thickness differences detected by each of the first sensors at the same time, it is determined whether the wafer has experienced a positional shift; and / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the wafer thickness change and temperature, the temperature of the relative position of the wafer and the target circumference is determined.

[0045] In some embodiments, the wafer inspection method further includes:

[0046] Before the process begins, the thickness detected by multiple second sensors at the top of the process chamber is used to determine whether the focusing ring has shifted position. The focusing ring surrounds the bearing surface of the support device and has at least one test area. Along the radial direction of the focusing ring, the test area has multiple different thicknesses, and in each test area, any two positions at the same distance from the center of the focusing ring have the same thickness. Multiple second sensors are equidistant from the central axis of the support device and are positioned opposite the test area. These second sensors are used to detect the thickness at the position directly opposite the second sensor within the test area.

[0047] When it is determined that the focusing ring has shifted position, the position of the focusing ring is adjusted.

[0048] In this embodiment of the invention, the processing device can determine whether the wafer has shifted position based on the thickness detected by multiple first sensors, and / or determine the temperature of the wafer relative to the target circumference based on the thickness detected by each first sensor during the process and the thickness detected before the process begins, that is, determine the temperature near the edge of the wafer. When the processing device can determine whether the wafer has shifted position, it helps the operator to shut down the equipment in time when the wafer shifts position; or the processing device can automatically shut down the equipment when it detects the wafer shift, thereby preventing the arc generated by the contact between the wafer and the focusing ring from damaging the electrostatic chuck. Because this invention can detect the wafer shift in a timely manner, the gap reserved between the focusing ring and the wafer can be reduced during the design, thereby reducing the bending of the plasma sheath and thus reducing the tilt of the etched shape.

[0049] When the processing device can detect the temperature near the edge of the wafer, it allows operators to promptly shut down the equipment when the wafer temperature becomes too high; alternatively, the processing device can automatically shut down the equipment when it detects that the temperature at the wafer edge is too high, thereby preventing the high temperature at the wafer edge from affecting the process. Furthermore, the method of determining temperature based on the thickness change of the wafer caused by high temperatures in this invention has very high measurement sensitivity. Attached Figure Description

[0050] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof. In the drawings:

[0051] Figure 1 A schematic diagram illustrating the generation of an electric arc between a wafer and a focusing ring in existing technology.

[0052] Figure 2A This is a schematic diagram of a semiconductor process equipment provided in an embodiment of the present invention.

[0053] Figure 2B This is a schematic diagram illustrating the principle of the first sensor for detecting thickness provided in an embodiment of the present invention.

[0054] Figure 3A This is a cross-sectional view of a wafer provided in one example of the present invention.

[0055] Figure 3B This is a cross-sectional view of a wafer provided in another example of the present invention.

[0056] Figure 3C This is a top view of a wafer provided in another example of the present invention.

[0057] Figure 3D For along Figure 3C A cross-sectional view along line I-I'.

[0058] Figure 4 This is a schematic diagram of the distribution of the first sensor and a schematic diagram of the wafer position shift provided in an embodiment of the present invention.

[0059] Figure 5 This is a schematic diagram showing the morphological changes of a wafer before and after heating.

[0060] Figure 6 This is a curve showing the relationship between the coefficient of thermal expansion of a wafer and temperature.

[0061] Figure 7 This is a curve showing the relationship between the diameter of the wafer and temperature.

[0062] Figure 8 This is a schematic diagram showing the positional relationship between the wafer and the electrostatic chuck in semiconductor process equipment provided in the prior art and the present invention.

[0063] Figure 9 This is a top view of the focusing ring provided in an embodiment of the present invention.

[0064] Figure 10 For along Figure 9 A cross-sectional view of line A-A' in the middle.

[0065] Figure 11 This is another top view of the focusing ring provided in an embodiment of the present invention.

[0066] Figure 12 For along Figure 11 A cross-sectional view of line B-B' in the middle.

[0067] Figure 13 This is another top view of the focusing ring provided in an embodiment of the present invention.

[0068] Figure 14 For along Figure 13 A cross-sectional view of line C-C' in the middle.

[0069] Figure 15 This is a schematic diagram showing that at least one of the wafer and the focusing ring has shifted position.

[0070] Figure 16 This is a schematic diagram of the thickness measurement of the inner step of the focusing ring in an embodiment of the present invention.

[0071] Figure 17 This is a schematic diagram of the wafer and electrostatic chuck in an embodiment of the present invention. Detailed Implementation

[0072] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0073] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0074] Unless otherwise defined, the technical or scientific terms used in the embodiments of this invention shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0075] Figure 1 A schematic diagram illustrating the generation of an electric arc between wafer 2 and focusing ring 3 in the prior art, as shown below. Figure 1As shown, if wafer 2 comes into contact with the focusing ring 3, an electric arc will occur, damaging the electrostatic chuck 1. Therefore, in the prior art, a certain gap is usually left between wafer 2 and the focusing ring 3. However, even so, during the placement of wafer 2, the position of wafer 2 may shift due to inconsistent heights of the support pins, thus causing it to come into contact with the focusing ring 3. Furthermore, when there is a large gap between wafer 2 and the focusing ring 3, the plasma sheath 4 will bend at that gap, resulting in a tilted shape at the edge of wafer 2 during etching.

[0076] In addition, during the process, the temperature of wafer 2 will affect the deposits attached to the surface of wafer 2, which in turn will affect the etched shape.

[0077] In view of this, the present invention provides a semiconductor process apparatus for detecting at least one of the positional offset and temperature of wafer 2. Figure 2A This is a schematic diagram of the semiconductor process equipment provided in the embodiments of the present invention, such as... Figure 2A As shown, the semiconductor process equipment includes a process chamber, a carrier device, multiple first sensors 51, and a processing device 9. The carrier device is disposed within the process chamber and is used to carry the wafer 2. This embodiment of the invention uses an electrostatic chuck 1 as an example of the carrier device.

[0078] In some embodiments, such as Figures 3A to 3B As shown, wafer 2 includes a main body portion 22 and an edge portion 23 located at the edge of the main body portion 22. The thickness of the edge portion 23 gradually decreases along the direction away from the center of wafer 2.

[0079] In order to prevent the wafer 2 from shifting and causing the bearing surface of the electrostatic chuck 1 to be exposed, the radius of the wafer 2 is usually larger than the radius of the bearing surface of the electrostatic chuck 1. When the wafer 2 is placed on the electrostatic chuck 1, the edge of the wafer 2 extends beyond the bearing surface of the electrostatic chuck 1.

[0080] Multiple first sensors 51 are located at the top of the process chamber, and the projection of the first sensors 51 onto the plane of the bearing surface of the electrostatic chuck 1 lies on a target circumference centered on the center of the electrostatic chuck 1. The multiple first sensors 51 are distributed along the target circumference, the radius of which is greater than or equal to the radius of the bearing surface of the electrostatic chuck 1 and less than the radius of the wafer 2. When the wafer 2 is placed on the bearing surface of the electrostatic chuck 1, the first sensors 51 are positioned opposite to the wafer 2 near its edge. The first sensors 51 are used to detect the thickness of the wafer 2 at the position directly opposite the first sensor 51.

[0081] Figure 2B This is a schematic diagram illustrating the principle of the first sensor detecting thickness in an embodiment of the present invention, as shown below. Figure 2BAs shown, the first sensor includes: a coherent light source 5a, a beam splitter 5b, a reflector 5c, and a receiver 5d. The coherent light source 5a is used to emit coherent light to the beam splitter 5b; the beam splitter 5b is used to divide the light emitted by the coherent light source 5a into a measurement light and a reference light; the measurement light is reflected to the object being measured 2a, and the reference light passes through the beam splitter 5b and illuminates the reflector 5c; the measurement light is reflected on the upper and lower surfaces of the object being measured 2a; the receiver 5d is used to determine the thickness of the object being measured 2a based on the interference of the reflected light from the upper and lower surfaces of the object being measured 2a.

[0082] The processing device 9 is electrically connected to a plurality of first sensors 51 and is used to determine whether the wafer 2 has shifted position based on the thickness detected by the first sensors 51; and / or to determine the temperature of the position of the wafer 2 relative to the target circumference.

[0083] Specifically, when the processing device 9 determines whether the wafer 2 has shifted position, it does so based on the thickness differences detected by each of the first sensors 51 at the same time. For example, the processing device 9 can determine whether the wafer 2 has shifted position at the initial stage of the process based on the thickness differences detected by the multiple first sensors 51 at the beginning of the process; or, for another example, the processing device 9 can determine whether the wafer 2 has shifted position during the process based on the thickness differences detected by the multiple first sensors 51 at a certain moment during the process.

[0084] Since the projection of the first sensor 51 onto the plane of the bearing surface of the electrostatic chuck 1 is located on the target circumference centered on the center of the electrostatic chuck 1, when the center of the wafer 2 is aligned with the center of the electrostatic chuck 1 (i.e., the wafer 2 has not shifted position), the thickness detected by any two first sensors 51 is equal or substantially equal. Therefore, when the thickness detected by two of the first sensors 51 is significantly different, it can be determined that the wafer 2 has shifted position.

[0085] Figure 4 This is a schematic diagram showing the distribution of the first sensor 51 and a schematic diagram showing the positional shift of the wafer 2 provided in this embodiment of the invention, as shown below. Figure 4As shown in one example, there are four first sensors 51, which are evenly distributed along the circumference of the target circle. When the wafer 2 is not shifted, the thickness detected by each first sensor 51 is d1. When the wafer 2 shifts to the left, the thickness detected by the first sensor 51 on the left is d2, where d2 > d1; the thickness detected by the first sensor 51 on the right is less than d1. When the wafer 2 shifts to the right, the thickness detected by the first sensor 51 on the left is d3, where d3 < d1; the thickness detected by the first sensor 51 on the right is greater than d1. Therefore, the positional shift of the wafer 2 can be determined based on the thickness detected by each first sensor 51.

[0086] In this embodiment of the invention, when the processing device 9 determines the temperature of the position of the wafer 2 relative to the target circumference, it specifically determines the temperature of the position of the wafer 2 relative to the target circumference, that is, the temperature of the wafer 2 near its edge, based on the difference between the thickness detected by each of the first sensors 51 during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the wafer 2 and the temperature.

[0087] Figure 5 This is a schematic diagram showing the morphological changes of wafer 2 before and after heating. Figure 6 The curve shows the relationship between the coefficient of thermal expansion of wafer 2 and temperature. Figure 7 The curve showing the relationship between the diameter of wafer 2 and temperature is shown below. Figures 5 to 7 It is known that wafer 2 expands as the temperature increases, causing changes in both its thickness and diameter. For example, at 25°C, the thickness of wafer 2 at the position opposite the target circumference is d0, and the diameter of wafer 2 is X; at 120°C, the thickness of wafer 2 at the position opposite the target circumference is d0 + Δd, and the diameter of wafer 2 is X + ΔX. Therefore, the relationship between the thickness change of wafer 2 and temperature can be obtained in advance through testing, and the temperature near the edge of wafer 2 can be determined based on the thickness change detected by each of the first sensors 51.

[0088] In this embodiment of the invention, the processing device 9 can detect whether the position of the wafer 2 has shifted, and / or detect the temperature of the wafer 2 near its edge. When the processing device 9 can determine whether the wafer 2 has shifted, it helps the operator to shut down the equipment in time when the wafer 2 shifts; or the processing device 9 automatically shuts down the equipment when it detects that the wafer 2 has shifted, thereby preventing the arc generated by the wafer 2 contacting the focusing ring 3 from damaging the electrostatic chuck 1. Additionally, as... Figure 8As shown, in the prior art, due to the difficulty in detecting the positional offset of wafer 2, in order to prevent wafer 2 from shifting and causing the surface of the electrostatic chuck 1 to be exposed, the edge of wafer 2 needs to extend beyond the bearing surface of the electrostatic chuck 1 by a distance D of approximately 1.5 mm. However, this results in the edge of wafer 2 not being cooled by the electrostatic chuck 1, leading to an increase in the temperature of the wafer 2 edge. In the embodiment of the present invention, by detecting the positional offset of wafer 2, wafer 2 can be placed in the correct position, thereby reducing the aforementioned distance D and suppressing the temperature rise at the edge of wafer 2. Furthermore, as... Figure 8 As shown, since the present invention can detect the positional shift of wafer 2 in a timely manner, the tilt of the inner side 3s of the focusing ring 3 can be reduced during the design, thereby reducing the gap reserved between the upper surface of the focusing ring 3 and wafer 2, thereby reducing the bending of the plasma sheath layer 4, and further reducing the tilt of the etched shape.

[0089] When the processing device 9 can detect the temperature near the edge of wafer 2, it is beneficial for operators to promptly shut down the equipment when the temperature near the edge of wafer 2 becomes too high; or, when the processing device 9 detects that the temperature near the edge of wafer 2 is too high, it can automatically shut down the equipment, thereby preventing the high temperature at the edge of wafer 2 from affecting the process effect. Furthermore, the method of determining temperature based on the thickness change of wafer 2 caused by high temperature in this invention has very high measurement sensitivity.

[0090] In some embodiments, the radius of the wafer 2 is R, and the radius of the target circumference is greater than or equal to R-0.5mm and less than R, thereby ensuring that the first sensor 51 is positioned opposite to the edge portion 23 of the wafer 2 when the wafer 2 does not shift.

[0091] In the above embodiment, the example is given where the projection of the first sensor 51 is located on the target circumference, and the radius of the target circumference is greater than or equal to the radius of the bearing surface and less than the radius of the wafer 2. In other embodiments, the first sensor 51 may also be configured in other ways. Specifically, for example... Figure 3C and Figure 3DAs shown, wafer 2 includes multiple thickness variation sections 21 arranged circumferentially thereon. These thickness variation sections 21 may be formed in a prior process. The thickness of each thickness variation section 21 gradually increases or decreases in a direction away from the center of wafer 2. Among the multiple thickness variation sections 21, any two positions at the same distance from the center of wafer 2 have the same thickness. In this case, the projection of the first sensor 51 onto the plane of the bearing surface of the electrostatic chuck 1 is located on a target circumference centered on the center of the electrostatic chuck 1, and the first sensor 51 is positioned opposite the thickness variation section 21. The first sensor 51 is used to detect the thickness at the position in wafer 2 directly opposite to the first sensor 51. The processing device 9 is electrically connected to the multiple first sensors 51 and is used to determine whether wafer 2 has experienced a positional shift based on the thickness differences detected by each first sensor 51 at the same time; and / or, based on the difference between the thickness detected by each first sensor 51 during the process and the thickness detected before the start of the process, and a pre-obtained relationship between the thickness variation of wafer 2 and temperature, to determine the temperature of the relative position of wafer 2 and the target circumference.

[0092] It should be noted that the thickness of the thickness variation section 21 gradually increases (or gradually decreases), which can be a strict increasing (or decreasing) trend in thickness; or the thickness can increase (or decrease) in a stepwise manner.

[0093] When wafer 2 includes multiple thickness variation sections 21, since any two positions of the same distance from the center of wafer 2 have the same thickness, and the thickness of the same thickness variation section 21 changes in the radial direction of wafer 2, the thickness detected by the multiple first sensors 51 is the same when wafer 2 is not displaced; when wafer 2 is displaced, at least two first sensors 51 detect different thicknesses. Therefore, it can be determined whether wafer 2 has been displaced based on the thickness detected by the multiple first sensors 51. Furthermore, since the shape of wafer 2 changes before and after heating, when wafer 2 includes multiple thickness variation sections 21, the temperature of the relative position of wafer 2 and the target circumference can also be determined based on the difference between the thickness detected by each first sensor 51 during the process and the thickness detected before the process begins.

[0094] In this embodiment of the invention, when the processing device 9 determines the temperature of the relative position between the wafer 2 and the target circumference, it can determine the temperature of the detection point corresponding to each first sensor 51 based on the difference between the thickness detected by each first sensor 51 during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the wafer 2 and the temperature; and determine the average temperature based on the temperature of each detection point, and use the average temperature as the temperature of the relative position between the wafer 2 and the target circumference.

[0095] In some embodiments, such as Figure 2A As shown, the process chamber includes a cavity 10 with a top opening and a top cover assembly 60 for closing the top opening of the cavity 10. The top cover assembly 60 includes a top cover 61 and a spray plate 62, with the spray plate 62 located on the side of the top cover 61 facing the electrostatic chuck 1. A flow equalization cavity 63 is formed inside the top cover 61, and the spray plate 62 has spray holes 62a communicating with the flow equalization cavity 63. Gas enters the flow equalization cavity 63 through an air inlet and is sprayed into the process chamber through the spray holes 62a. The top cover assembly 60 has a first light-transmitting hole 71. A first sensor 51 is disposed on the side of the top cover assembly 60 away from the electrostatic chuck 1. For example, a first mounting member 55 is disposed on the side of the top cover assembly 60 away from the electrostatic chuck 1, and the first sensor 51 is disposed on the first mounting member 55. The first sensor 51 is a laser sensor disposed on the side of the top cover assembly 60 away from the electrostatic chuck 1, and the laser emitted by the first sensor 51 can pass through the first light-transmitting hole 71. The principle of laser sensor to measure thickness is as follows: a coherent laser is irradiated onto the object being measured, and the thickness of the object is determined based on the interference of the light reflected from the upper and lower surfaces of the object.

[0096] like Figure 2A As shown, a first light-transmitting plate 81 is also provided on the side of the top cover assembly 60 away from the electrostatic chuck 1. The first light-transmitting plate 81 is used to seal the first light-transmitting hole 71, thereby isolating the process environment inside the process chamber from the outside world.

[0097] In some embodiments, such as Figure 2A As shown, the focusing ring 3 is arranged around the bearing surface of the electrostatic chuck 1. Figure 9 This is a top view of the focusing ring 3 provided in an embodiment of the present invention. Figure 10 For along Figure 9 A cross-sectional view of line A-A', as shown Figure 9 and Figure 10 As shown, the focusing ring 3 includes a main ring body 33 and an inner step 32 located inside the main ring body 33; the thickness of the inner step 32 is less than the maximum thickness of the main ring body 33. The main ring body 33 of the focusing ring 3 has at least one test area 31. The test area 31 has various thicknesses along the radial direction of the focusing ring 3; and, in each test area 31, the thickness is the same at any two locations equidistant from the center of the focusing ring 3.

[0098] like Figure 2AAs shown, the semiconductor process equipment may further include: a plurality of second sensors 52 located at the top of the process chamber, wherein the plurality of second sensors 52 are equidistant from the central axis of the electrostatic chuck 1 and are disposed opposite to the test area 31. The second sensors 52 are used to detect the thickness in the test area 31 at the position directly opposite the second sensor 52. The principle of thickness detection by the second sensors 52 is the same as that of the first sensor 51, and will not be described again here. The processing device 9 is electrically connected to each of the second sensors 52, and the processing device 9 is also used to determine whether the focusing ring 3 has shifted position based on the thickness detected by each of the second sensors 52.

[0099] Since the distances from the multiple second sensors 52 to the central axis of the electrostatic chuck 1 are the same, and the thicknesses at any two positions with the same distance from the center of the focusing ring 3 in each test area 31 are the same, when the center of the focusing ring 3 is directly opposite the center of the electrostatic chuck 1 (i.e., the focusing ring 3 has not shifted position), the thicknesses detected by each second sensor 52 are the same; when the focusing ring 3 shifts position, the thicknesses detected by at least two second sensors 52 are different. Therefore, based on the thicknesses detected by each second sensor 52, it can be determined whether the focusing ring 3 has shifted position.

[0100] In some embodiments, such as Figure 9 and Figure 10 As shown, along the direction away from the center of the focusing ring 3, the thickness of the area to be measured 31 decreases in a stepwise manner; or, as... Figure 11 and Figure 12 As shown, along the direction away from the center of the focusing ring 3, the thickness of the area to be measured 31 first decreases and then increases; or, as... Figure 13 and Figure 14 As shown, the thickness of the test area 31 gradually increases along the direction away from the center of the focusing ring 3. In other embodiments, the thickness of the test area 31 may also follow other variation patterns, such as gradually decreasing, increasing in a stepwise manner, or increasing first and then decreasing along the direction away from the center of the focusing ring 3.

[0101] In embodiments of the present invention, such as Figure 13 As shown, the number of test areas 31 can be one. For example, the test area 31 can be an annular area arranged along the circumference of the focusing ring 3, with multiple second sensors 52 arranged opposite to the same test area 31, and the multiple second sensors 52 evenly distributed along the circumference of the focusing ring 3; or, as... Figure 9 and Figure 11 As shown, there can be multiple test areas 31, which are evenly distributed along the circumference of the focusing ring 3, with the second sensor 52 corresponding to each test area 31. For example, there can be at least four test areas 31 to ensure that the processing device 9 can detect any positional shift of the focusing ring 3 in any direction.

[0102] In some embodiments, the second sensor 52 is the same as the first sensor 51, and is also a laser sensor, such as... Figure 2A As shown, the second sensor 52 is disposed on the side of the top cover assembly 60 away from the electrostatic chuck 1. For example, the second sensor 52 is disposed on the first mounting member 55 described above. The top cover assembly 60 has a second light-transmitting hole 72, through which the laser emitted by the second sensor 52 can pass.

[0103] Figure 15 This diagram illustrates a positional shift of at least one of wafer 2 and focusing ring 3. With the center of electrostatic chuck 1 as the origin, the pre-designed gap width between focusing ring 3 and wafer 2 is δt. The actual center coordinates of focusing ring 3 are (Xf, Yf), and the actual center coordinates of wafer 2 are (Xw, Yw). Therefore, the gap width δX between the left end of wafer 2 and focusing ring 3 is... L =δt+(Xw-Xf); the gap width δX between the right end of wafer 2 and focusing ring 3. R =δt-(Xw-Xf); The gap width δY between the upper end of wafer 2 and the focusing ring 3 in the figure. D =δt+(Yw-Yf); The gap width δY between the lower end of wafer 2 and the focusing ring 3 in the figure. U =δt-(Yw-Yf); Therefore, even if the wafer 2 does not shift, the wafer 2 may still come into contact with the focusing ring 3 if the focusing ring 3 shifts position. In this embodiment of the invention, the second sensor 52 is used to detect the thickness of the area 31 to be measured by the focusing ring 3, and the detection result is used to determine whether the focusing ring 3 has shifted, thereby further preventing the focusing ring 3 from coming into contact with the wafer 2.

[0104] In some embodiments, the processing apparatus may also determine the temperature of the focusing ring 3 based on the difference between the thickness detected by the second sensor 52 during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the focusing ring 3 and the temperature. The principle for determining the temperature of the focusing ring 3 is the same as the principle for determining the temperature of the wafer 2, and will not be repeated here.

[0105] In some embodiments, such as Figure 2A As shown, the semiconductor process equipment also includes a third sensor 53, which is located at the top of the process chamber and is used to detect the thickness of the spray plate 62. The processing device 9 is electrically connected to the third sensor 53 and is also configured to determine the temperature of the spray plate 62 based on the difference between the thickness detected by the third sensor 53 during the process and the thickness detected before the start of the process, and a pre-determined relationship between the thickness difference of the spray plate 62 and the temperature.

[0106] The principle for determining the temperature of spray plate 62 is the same as that for determining the temperature of wafer 2, and will not be repeated here.

[0107] like Figure 2A As shown, the top cover 61 has a third light-transmitting hole 73. The third sensor 53 is a laser sensor fixed on the side of the top cover 61 away from the electrostatic chuck 1, and the laser emitted by the third sensor 53 can pass through the third light-transmitting hole 73. The top cover assembly 60 also has a third light-transmitting plate 83 on the side away from the electrostatic chuck 1. The third light-transmitting plate 83 is used to close the third light-transmitting hole 73.

[0108] like Figure 2A As shown, a second mounting member 56 is provided on the side of the top cover 61 away from the electrostatic chuck 1, and a third sensor 53 is provided on the second mounting member 56.

[0109] In some embodiments, such as Figure 2A As shown, the semiconductor process equipment also includes a fourth sensor 54, located at the top of the process chamber. The projection of the fourth sensor 54 onto the plane of the bearing surface of the electrostatic chuck 1 is located inside the target circumference. The fourth sensor 54 is used to detect the thickness of the wafer 2 at the position directly opposite the fourth sensor 54 in real time. The processing device 9 is electrically connected to the fourth sensor 54 and is also used to determine the temperature of the relative position between the wafer 2 and the fourth sensor 54 based on the difference between the thickness detected by the fourth sensor 54 during the process and the initial thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the wafer 2 and the temperature. The specific principle is the same as the principle for determining the temperature in the above embodiment, and will not be repeated here.

[0110] like Figure 2A As shown, the fourth sensor 54 is disposed on the side of the top cover assembly 60 away from the electrostatic chuck 1. For example, a third mounting member 57 is disposed on the side of the top cover assembly 60 away from the electrostatic chuck 1, and the fourth sensor 54 is disposed on the third mounting member 57. The fourth sensor 54 is a laser sensor, and the top cover assembly 60 has a fourth light-transmitting hole 74, through which the laser emitted by the fourth sensor 54 can pass.

[0111] like Figure 2A As shown, a fourth light-transmitting plate 84 is also provided on the side of the top cover assembly 60 away from the electrostatic chuck 1. The fourth light-transmitting plate 84 is used to close the fourth light-transmitting hole 74.

[0112] In this embodiment of the invention, each sensor is a laser sensor, and the laser sensor adopts a small aperture (for example, the aperture can be less than 0.5 mm). Correspondingly, each light-transmitting hole on the top cover assembly 60 adopts a small aperture to prevent abnormal discharge or deposit accumulation caused by plasma inhomogeneity at the light-transmitting hole position.

[0113] In addition, a sealing ring can be provided between any of the first light-transmitting plate 81, the second light-transmitting plate 82, the third light-transmitting plate 83, and the fourth light-transmitting plate 84 and the top cover 61, so as to ensure that the process environment inside the process chamber is isolated from the outside world.

[0114] This invention also provides a wafer inspection method for use in the aforementioned semiconductor process equipment. The wafer inspection method includes:

[0115] The thickness detected by multiple first sensors 51 is obtained. In some embodiments, the first sensors 51 are located at the top of the process chamber. The projection of the first sensors 51 onto the plane of the bearing surface of the electrostatic chuck 1 is located on a target circumference centered on the center of the electrostatic chuck 1, and is distributed along the target circumference. The radius of the target circumference is greater than or equal to the radius of the bearing surface of the electrostatic chuck 1 and less than the radius of the wafer 2. The first sensors 51 are used to detect the thickness of the wafer 2 at the position directly opposite the first sensor 51. In other embodiments, the first sensor 51 is located at the top of the process chamber. The projection of the first sensor 51 onto the plane of the bearing surface of the electrostatic chuck 1 is located on a target circumference centered on the center of the electrostatic chuck 1. The electrostatic chuck 1 is located inside the process chamber and is used to carry the wafer 2. The wafer 2 includes a plurality of thickness variation portions 21 arranged circumferentially thereafter. The thickness of the thickness variation portions 21 gradually increases or decreases along the direction away from the center of the wafer 2. Among the plurality of thickness variation portions 21, any two positions at the same distance from the center of the wafer 2 have the same thickness. The first sensor 51 is disposed opposite to the thickness variation portions 21 and is used to detect the thickness of the position in the wafer 2 directly opposite to the first sensor 51.

[0116] After obtaining the thickness detected by each of the first sensors 51, it is determined whether the wafer 2 has shifted position based on the thickness detected by each of the first sensors 51 at the same time; and / or, based on the difference between the thickness detected by each of the first sensors 51 during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the thickness change of the wafer 2 and the temperature, the temperature of the relative position of the wafer 2 and the target circumference is determined.

[0117] The wafer inspection method of the present invention will be described below with specific examples.

[0118] S1. Before the process begins, based on the thickness detected by multiple second sensors 52 at the top of the process chamber, it is determined whether the focusing ring 3 has shifted position. If a position shift is detected, the focusing ring 3 is adjusted until its position no longer shifts. The setup of the focusing ring 3 and the second sensors 52 is described above and will not be repeated here.

[0119] S2. The position of the first sensor 51 is calibrated so that the first sensor 51 is positioned opposite to the inner step 32 of the focusing ring 3.

[0120] Specifically, when calibrating the position of the first sensor 51, multiple first sensors 51 are arranged circumferentially along the focusing ring 3; then, as... Figure 16 As shown, before placing the wafer 2, the thickness of the focusing ring 3 is measured using the first sensor 51. When the thickness detected by each first sensor 51 is the same and is within the preset thickness range corresponding to the inner step 32, it indicates that the distance between each first sensor 51 and the central axis of the focusing ring 3 is the same and that it is set opposite to the inner step 32 of the focusing ring 3. At this time, the position of the first sensor 51 is calibrated. The projection of the first sensor 51 on the plane of the bearing surface of the electrostatic chuck 1 is located on the target circumference. The radius of the target circumference is greater than or equal to the radius of the bearing surface of the electrostatic chuck 1 and less than the radius of the wafer 2.

[0121] S3. Use a robotic arm to place wafer 2 onto electrostatic chuck 1.

[0122] S4. The thickness of the edge portion 23 of the wafer 2 is detected by the first sensor 51. When the difference between the thicknesses detected by any two first sensors 51 is less than or equal to a preset value, it can be determined that the position of the wafer 2 is correct. When the thicknesses detected by at least two first sensors 51 are different, it can be determined that the wafer 2 has shifted position. At this time, the wafer 2 can be repositioned by a robot until the thicknesses detected by any two first sensors 51 are the same.

[0123] S5. During the process, determine the temperature of the relative position of wafer 2 and the target circumference, the temperature of the relative position of wafer 2 and the fourth sensor 54, and the temperature of the spray plate 62.

[0124] Specifically, when determining the temperature of the relative position between wafer 2 and the target circumference, the thickness change detected by each first sensor 51 is determined based on the thickness detected during the process and the thickness detected before the process begins. Based on the thickness change detected by each first sensor 51 and the pre-obtained relationship between the thickness change of wafer 2 and temperature, the temperature of the detection point corresponding to each first sensor 51 is determined. Then, based on the temperature of each detection point, the average temperature of multiple detection points is determined, and this average temperature is used as the temperature of the relative position between wafer 2 and the target circumference.

[0125] When determining the temperature of the relative position between wafer 2 and the fourth sensor 54, the temperature of the relative position between wafer 2 and the fourth sensor 54 is determined based on the difference between the thickness detected by the fourth sensor 54 during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of wafer 2 and temperature.

[0126] When determining the temperature of the spray plate 62, the temperature of the spray plate 62 is determined based on the difference between the thickness detected by the third sensor 53 during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the spray plate 62 and the temperature.

[0127] Specifically, when any one of the following exceeds the corresponding temperature threshold: the position of wafer 2 relative to the target circumference, the position of wafer 2 relative to the fourth sensor 54, or the spray plate 62, the semiconductor process equipment is shut down.

[0128] In addition, during the process, the thickness detected by multiple first sensors 51 at the same time can be used to determine whether the wafer 2 has shifted position, and the semiconductor process equipment can be shut down when a position shift occurs.

[0129] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process apparatus, characterized in that, include: Process chambers; A support device disposed within the process chamber, the support device being used to support the wafer; Multiple first sensors are located at the top of the process chamber. The projection of the first sensors onto the plane of the support surface of the support device is located on a target circumference centered on the center of the support device, and is distributed along the target circumference. The radius of the target circumference is greater than or equal to the radius of the support surface of the support device and less than the radius of the wafer. The first sensors are used to detect the thickness of the wafer at the position directly opposite the first sensor. A processing device, electrically connected to a plurality of the first sensors, is used to determine whether the wafer has experienced a positional shift based on the thickness differences detected by each of the first sensors at the same time. And / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the thickness change of the wafer and the temperature, the temperature of the position of the wafer relative to the target circumference is determined.

2. The semiconductor process equipment according to claim 1, characterized in that, The radius of the target circumference is greater than or equal to R-0.5mm and less than R, where R is the radius of the wafer.

3. A semiconductor process apparatus, characterized in that, include: Process chambers; A support device disposed within the process chamber, the support device being used to support the wafer; The wafer includes a plurality of thickness variation portions arranged circumferentially thereon; the thickness of the thickness variation portions gradually increases or decreases in a direction away from the center of the wafer; and in the plurality of thickness variation portions, any two positions at the same distance from the center of the wafer have the same thickness. Multiple first sensors are located at the top of the process chamber. The projection of the first sensor onto the plane of the support surface of the support device is located on a target circumference centered on the center of the support device, and is disposed opposite to the thickness change part. The first sensor is used to detect the thickness of the wafer at the position directly opposite the first sensor. A processing device, electrically connected to a plurality of the first sensors, is used to determine whether the wafer has experienced a positional shift based on the thickness differences detected by each of the first sensors at the same time. And / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the thickness change of the wafer and the temperature, the temperature of the relative position of the wafer and the target circumference is determined.

4. The semiconductor process equipment according to any one of claims 1 to 3, characterized in that, The processing device is used to determine the temperature of the detection point corresponding to each first sensor when determining the temperature of the relative position of the wafer and the target circumference, based on the difference between the thickness detected by each first sensor during the process and the thickness detected before the start of the process, and the relationship between the thickness change and temperature. The average temperature of the multiple detection points is taken as the temperature of the wafer relative to the target circumference.

5. The semiconductor process equipment according to any one of claims 1 to 3, characterized in that, The process chamber includes: a cavity with a top opening, and a top cover assembly for closing the top opening of the cavity; the top cover assembly has a first light-transmitting hole, and the first sensor is a laser sensor disposed on the side of the top cover assembly away from the support device, and the laser emitted by the first sensor can pass through the first light-transmitting hole. The top cover assembly is further provided with a first light-transmitting plate on the side away from the supporting device, and the first light-transmitting plate is used to close the first light-transmitting hole.

6. The semiconductor process equipment according to any one of claims 1 to 3, characterized in that, The semiconductor process equipment also includes: A focusing ring is provided around the bearing surface of the bearing device. The focusing ring has at least one test area, wherein the test area has multiple different thicknesses along the radial direction of the focusing ring, and in each test area, the thickness is the same at any two positions at the same distance from the center of the focusing ring. Multiple second sensors are located at the top of the process chamber. The multiple second sensors are equidistant from the central axis of the support device and are arranged opposite to the area to be tested. The second sensors are used to detect the thickness of the area to be tested at the position directly opposite the second sensor. The processing device is electrically connected to the second sensor and is also used to determine whether the focusing ring has shifted position based on the thickness detected by each of the second sensors.

7. The semiconductor process equipment according to claim 6, characterized in that, The focusing ring has multiple test areas, which are evenly distributed along the circumference of the focusing ring; the second sensor is configured to correspond one-to-one with each test area. Alternatively, the focusing ring may have a test area that is annular, and a plurality of second sensors may be uniformly distributed along the circumference of the focusing ring.

8. The semiconductor process equipment according to claim 6, characterized in that, The process chamber includes: a cavity with a top opening, and a top cover assembly for closing the top opening of the cavity; the top cover assembly has a second light-transmitting hole, the second sensor is a laser sensor disposed on the side of the top cover assembly away from the support device, and the laser emitted by the second sensor can pass through the second light-transmitting hole; A second light-transmitting plate is provided on the side of the top cover assembly away from the supporting device, and the second light-transmitting plate is used to close the second light-transmitting hole.

9. The semiconductor process equipment according to any one of claims 1 to 3, characterized in that, The process chamber includes: a cavity with a top opening and a top cover assembly. The top cover assembly includes: a top cover for closing the top opening of the cavity, and a spray plate located on the side of the top cover facing the support device. A flow equalization cavity is formed inside the top cover, and spray holes communicating with the flow equalization cavity are provided on the spray plate. The semiconductor process equipment also includes: The third sensor, located at the top of the process chamber, is used to detect the thickness of the spray plate; The processing device is electrically connected to the third sensor and is also used to determine the temperature of the spray plate based on the difference between the thickness detected by the third sensor during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the spray plate and the temperature.

10. The semiconductor process equipment according to claim 9, characterized in that, The top cover has a third light-transmitting hole, and the third sensor is a laser sensor fixed on the side of the top cover away from the supporting device, and the laser emitted by the third sensor can pass through the third light-transmitting hole; A third light-transmitting plate is also provided on the side of the top cover assembly away from the supporting device, and the third light-transmitting plate is used to close the third light-transmitting hole.

11. The semiconductor process equipment according to any one of claims 1 to 3, characterized in that, The semiconductor process equipment also includes: The fourth sensor is located at the top of the process chamber, and the projection of the fourth sensor onto the plane of the support surface of the support device is located inside the target circumference; the fourth sensor is used to detect the thickness of the wafer at the position directly opposite the fourth sensor in real time; The processing device is electrically connected to the fourth sensor and is also used to determine the temperature of the relative position of the wafer and the fourth sensor based on the difference between the thickness detected by the fourth sensor during the process and the thickness detected before the start of the process, as well as the pre-obtained relationship between the thickness change of the wafer and the temperature.

12. The semiconductor process equipment according to claim 11, characterized in that, The process chamber includes: a cavity with a top opening, and a top cover assembly for closing the top opening of the cavity; the top cover assembly has a fourth light-transmitting hole, and the fourth sensor is a laser sensor disposed on the side of the top cover assembly away from the support device, and the laser emitted by the fourth sensor can pass through the fourth light-transmitting hole. The top cover assembly is further provided with a fourth light-transmitting plate on the side away from the supporting device, and the fourth light-transmitting plate is used to close the fourth light-transmitting hole.

13. A wafer inspection method, characterized in that, include: The thickness detected by multiple first sensors is obtained; wherein, the first sensors are located at the top of the process chamber, and the projection of the first sensors on the plane of the bearing surface of the bearing device is located on a target circumference with the center of the bearing device as the center, and is distributed along the target circumference. The radius of the target circumference is greater than or equal to the radius of the bearing surface of the bearing device and less than the radius of the wafer. The first sensors are used to detect the thickness of the wafer at the position directly opposite the first sensor. Based on the thickness differences detected by each of the first sensors at the same time, it is determined whether the wafer has shifted position; and / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the wafer thickness change and temperature, the temperature of the position of the wafer relative to the target circumference is determined.

14. A wafer inspection method, characterized in that, include: The thickness detected by multiple first sensors is acquired; wherein, the first sensors are located at the top of the process chamber, and the projection of the first sensors on the plane of the bearing surface of the carrier device is located on a target circumference centered on the center of the carrier device; the carrier device is located inside the process chamber and is used to support the wafer; the wafer includes multiple thickness variation sections arranged circumferentially; the thickness of the thickness variation sections gradually increases or decreases in a direction away from the center of the wafer; among the multiple thickness variation sections, any two positions at the same distance from the center of the wafer have the same thickness; the first sensors are arranged opposite to the thickness variation sections and are used to detect the thickness of the position on the wafer directly opposite the first sensor; Based on the thickness differences detected by each of the first sensors at the same time, it is determined whether the wafer has experienced a positional shift; and / or, based on the difference between the thickness detected by each of the first sensors during the process and the thickness detected before the start of the process, and the pre-obtained relationship between the wafer thickness change and temperature, the temperature of the relative position of the wafer and the target circumference is determined.

15. The wafer inspection method according to claim 13 or 14, characterized in that, The wafer inspection method further includes: Before the process begins, the thickness detected by multiple second sensors at the top of the process chamber is used to determine whether the focusing ring has shifted position. The focusing ring surrounds the bearing surface of the support device and has at least one test area. Along the radial direction of the focusing ring, the test area has multiple different thicknesses, and in each test area, any two positions at the same distance from the center of the focusing ring have the same thickness. Multiple second sensors are equidistant from the central axis of the support device and are positioned opposite the test area. These second sensors are used to detect the thickness at the position directly opposite the second sensor within the test area. When it is determined that the focusing ring has shifted position, the position of the focusing ring is adjusted.

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