Dry etching apparatus and dry etching method

Abstract

This application relates to a dry etching apparatus and a dry etching method. The dry etching apparatus includes an etching chamber, a pressure detection component, and a communication component. The etching chamber forms a cavity structure and includes a first wall and a second wall disposed opposite to each other in a first direction. The pressure detection component is located outside the etching chamber and communicates with the interior of the cavity structure. One end of the communication component communicates with the cavity structure, and the other end communicates with the pressure detection component. The etching chamber also includes a side wall that surrounds the cavity in the first direction and connects to both the first and second walls. The first wall, the side wall, and the second wall together form the cavity structure. A first communication port is provided on the side wall, communicating with the interior of the cavity structure. The communication component communicates with the interior of the cavity structure through the first communication port. The dry etching apparatus and method provided in this application embodiment can improve the service life of the pressure gauge used to detect the internal pressure of the reaction chamber.

Description

Technical Field

[0001] This application relates to the field of semiconductor fabrication equipment technology, and in particular to a dry etching apparatus and a dry etching method. Background Technology

[0002] Dry etching equipment is a key piece of equipment used in semiconductor manufacturing and display device manufacturing for precise material removal. It utilizes etching gas or plasma to react chemically or physically with the surface of the workpiece to be etched, thereby removing the material from the surface of the workpiece and forming a specific pattern on it.

[0003] During the etching process, it is usually necessary to detect and control the pressure inside the reaction chamber within a suitable range. However, in related technologies, the pressure gauges used to detect the pressure inside the reaction chamber have a short lifespan. Summary of the Invention

[0004] The dry etching equipment and dry etching method provided in this application can improve the service life of the pressure gauge that detects the internal pressure of the reaction chamber.

[0005] In a first aspect, embodiments of this application provide a dry etching apparatus, which includes an etching chamber, a support member, a pressure detection component, and a communication component. The etching chamber has an internal cavity structure and includes a first wall and a second wall disposed opposite to each other in a first direction. The support member is located inside the cavity structure and is positioned on one side of the first wall along the first direction. The side of the support member facing away from the first wall is spaced apart from the second wall, and the side of the support member facing away from the first wall is configured to contact and support the workpiece to be etched. The pressure detection component is located outside the etching chamber and communicates with the interior of the cavity structure. One end of the communication component communicates with the cavity structure, and the other end communicates with the pressure detection component. The etching chamber also includes a side wall that surrounds the first direction and connects to both the first and second walls. The first wall, the side wall, and the second wall together form the cavity structure. A first communication port communicating with the interior of the cavity structure is provided on the side wall, and the communication component communicates with the interior of the cavity structure through the first communication port.

[0006] In some embodiments, the first connecting opening is located in the first direction between the first wall and the surface of the support member facing away from the first wall. Optionally, the distance between the first connecting opening and the surface of the first wall and the support member facing away from the first wall in the first direction is D, where 5cm ≤ D ≤ 15cm. Optionally, the first wall is located on one side of the second wall along the direction of gravity. Optionally, the sidewall is arranged in a vertical direction.

[0007] In some embodiments, the dry etching apparatus further includes a gas supply assembly. A second communication port communicating with the cavity structure is provided on the second wall. The gas supply assembly is connected to the second communication port, and the orientation direction of the second communication port relative to the cavity structure intersects with the orientation direction of the first communication port relative to the cavity structure. Optionally, the gas supply assembly is configured to supply at least one of chlorine, boron trichloride, or a fluorine-containing gas to the cavity structure.

[0008] In some embodiments, the dry etching apparatus further includes a vacuum pumping component, and the first wall has a third communication port communicating with the cavity structure. The vacuum pumping component is connected to the third communication port, and the orientation direction of the third communication port relative to the cavity structure intersects with the orientation direction of the first communication port relative to the cavity structure.

[0009] In some embodiments, the air pressure detection assembly includes a first detection element and a second detection element, wherein the range of the first detection element is smaller than the range of the second detection element, and the first and second detection elements are connected in parallel within the cavity structure via a connecting assembly. Optionally, the range of the first detection element is 0 Torr-0.1 Torr, and the range of the second detection element is 0 Torr-2 Torr. Optionally, the connecting assembly includes a main connecting path communicating with the interior of the cavity structure and a first branch and a second branch connected in parallel to the main connecting path, wherein the first branch communicates with the first detection element, and the second branch communicates with the second detection element. Optionally, at least a portion of the main connecting path extends along the direction of gravity, and both the first and second branches extend horizontally. Optionally, both the first and second branches are connected to the middle portion of the main connecting path along its extension direction. Optionally, both the first and second branches are located above the first connecting opening along the direction of gravity. Optionally, a first valve is provided on the first branch, and the first valve is configured to control the opening and closing of the first branch; a second valve is provided on the second branch, and the second valve is configured to control the opening and closing of the second branch.

[0010] In some embodiments, the pressure detection assembly includes a first detection element, the communication assembly includes a first conduit connecting the first detection element to the interior of the cavity structure, and the dry etching apparatus further includes a heating element that wraps around the outer wall of the first conduit. Optionally, the outer wall of the first conduit has a first protrusion protruding outward, and at least a portion of the heating element covers the first protrusion. Optionally, the outer wall of the first conduit is recessed inward to form a first recess, and at least a portion of the heating element covers the first recess. Optionally, the outer wall of the first conduit includes a first arcuate segment, and at least a portion of the heating element covers the first arcuate segment. Optionally, the outer diameter of the first arcuate segment is uniform throughout its extension direction.

[0011] In some embodiments, the air pressure detection assembly includes a first detection element, and the communication assembly includes a first conduit connecting the first detection element to the interior of the cavity structure. The inner wall of the first conduit includes a second arc-shaped segment. Optionally, the second arc-shaped segment communicates with the first detection element. Optionally, the inner diameter of the second arc-shaped segment is uniform throughout. Optionally, the outer wall of the first conduit includes the first arc-shaped segment, and the first arc-shaped segment and the second arc-shaped segment are correspondingly arranged.

[0012] In some embodiments, the dry etching apparatus further includes a blocking structure located inside the cavity structure or the connecting assembly. Optionally, the blocking structure includes a blocking tube located inside the cavity structure, one end of which communicates with a first connecting port, and the other end of which extends into the cavity structure and is spaced apart from the sidewall. Optionally, the blocking structure includes a blocking member located inside the cavity structure, connected to the sidewall and located on one side of the first connecting port, spaced apart from the first connecting port, and the projection of the blocking member on the sidewall at least partially overlaps the projection of the first connecting port on the sidewall. Optionally, the blocking member is inclined toward the first wall in a direction away from the sidewall. Optionally, the blocking structure includes a filter structure located inside the connecting assembly, with the periphery of the filter structure connected to the inner sidewall of the connecting assembly.

[0013] In some embodiments, the dry etching apparatus further includes a heating element configured to heat the connecting assembly. Optionally, the connecting assembly includes a first connecting segment communicating with a first connecting port, and the heating element is wrapped around the outer wall of the first connecting segment. Optionally, the connecting assembly includes a second connecting segment communicating with a pressure detection assembly, and the heating element is wrapped around the outer wall of the second connecting segment. Optionally, the connecting assembly includes a bent segment, and the heating element is wrapped around the outer wall of the bent segment. Optionally, the connecting assembly is provided with a valve structure, and the heating element is wrapped around the outer wall of the valve structure.

[0014] In some embodiments, the connecting component includes a first portion extending along a second direction and communicating with a first connecting port, a second portion extending along a first direction and communicating with the first portion, and a bent portion connecting the first portion and the second portion. Optionally, the bent portion includes a rounded corner structure, and the first portion and the second portion are smoothly connected by the rounded corner structure. Optionally, the inner diameter of the bent portion is larger than the inner diameter of the first portion. Optionally, the inner diameter of the bent portion is larger than the inner diameter of the second portion.

[0015] In some embodiments, the connecting component includes a first connecting segment communicating with a first connecting port, the inner diameter of which gradually decreases in the direction away from the first connecting port. Optionally, the end of the first connecting segment facing the first connecting port forms a first hemispherical end, the diameter of the first hemispherical end facing the first connecting port being larger than the diameter of the side of the first hemispherical end away from the first connecting port. Optionally, the connecting component further includes a second connecting segment communicating with a pressure detection component, the inner diameter of which gradually increases in the direction approaching the pressure detection component.

[0016] Secondly, embodiments of this application provide a dry etching method. Based on the aforementioned dry etching apparatus, the dry etching apparatus further includes a heating element, which is wrapped around the outer wall of the communicating component. The dry etching method includes:

[0017] The heating element heats the connecting component to increase the internal temperature of the connecting component, resulting in a larger detection value from the air pressure detection component and an increase in the temperature of the heating element.

[0018] According to the dry etching apparatus provided in this application, the dry etching apparatus utilizes etching gas or plasma to react chemically or physically with the surface of the workpiece to be etched, thereby removing material from the surface of the workpiece to form a specific pattern. The dry etching apparatus includes an etching chamber and a support member located inside the etching chamber. The interior of the etching chamber forms a cavity structure. The etching chamber includes a first wall and a second wall disposed opposite to each other in a first direction, and the support member can be connected to the first wall. During the etching process, the workpiece to be etched is located within the cavity structure and supported by the support member on the side away from the first wall. To monitor the gas pressure during the etching process, the dry etching apparatus also includes a gas pressure detection component and a communication component connecting the gas pressure detection component and the interior of the cavity structure. During the etching process, the products generated by the reaction between the etching gas or plasma and the surface material of the workpiece to be etched have a certain degree of volatility. When the communication component and the gas pressure detection component are connected to the interior of the cavity structure, the products can flow from the interior of the cavity structure to the communication component and the gas pressure detection component. To reduce the impact of byproducts on the connecting components and the pressure detection components, a first communication port communicating with the cavity structure is provided on the side wall of the etching chamber. The connecting components communicate with the interior of the cavity structure through the first communication port. Positioning the first communication port on the side wall ensures that the opening direction of the first communication port relative to the interior of the cavity structure intersects with a first direction. When byproducts naturally deposit inside the cavity structure under gravity along the first direction, the direction of deposition of the byproducts inside the cavity structure intersects with the opening direction of the first communication port relative to the cavity structure. This reduces the probability of byproducts naturally depositing at the first communication port under gravity, thereby reducing the probability of byproducts entering the connecting components and the pressure detection components. This, in turn, reduces the probability of byproducts depositing on the side walls of the connecting components and the pressure detection components, extending their lifespan. Attached Figure Description

[0019] The features, advantages, and technical effects of exemplary embodiments of this application will now be described with reference to the accompanying drawings.

[0020] Figure 1 A first structural schematic diagram of a dry etching apparatus provided in some embodiments of this application;

[0021] Figure 2 This application provides a second structural schematic diagram of a dry etching apparatus according to some embodiments;

[0022] Figure 3 A third structural schematic diagram of a dry etching apparatus provided in some embodiments of this application;

[0023] Figure 4 A fourth structural schematic diagram of a dry etching apparatus provided in some embodiments of this application;

[0024] Figure 5 A fifth structural schematic diagram of a dry etching apparatus provided in some embodiments of this application;

[0025] Figure 6 A sixth structural schematic diagram of a dry etching apparatus provided in some embodiments of this application;

[0026] Figure 7 This is a seventh structural schematic diagram of a dry etching apparatus provided for some embodiments of this application.

[0027] Marker explanation:

[0028] 10. Etching chamber; 11. First wall; 12. Second wall; 13. Side wall;

[0029] 20. Support components;

[0030] 30. Barometric pressure detection assembly; 31. First detection component; 32. Second detection component;

[0031] 40. Connecting component; 41. Connecting main path; 42. First branch path; 43. Second branch path; 44. First conduit; 441. First protrusion; 442. Second protrusion; 443. First arc segment; 444. Second arc segment; 45. First connecting segment; 46. Second connecting segment; 47. Bend segment;

[0032] 50. Gas supply components;

[0033] 60. Vacuum pumping assembly;

[0034] 70. Heating element;

[0035] 80. Blocking structure; 81. Blocking tube; 82. Blocking component; 83. Filter screen structure;

[0036] Q1. Cavity structure;

[0037] K1, First connecting port; K2, Second connecting port; K3, Third connecting port;

[0038] F1, First valve; F2, Second valve;

[0039] B1, First part; B2, Second part; B3, Bent part; B31, Rounded corner structure;

[0040] X, the first direction; Y, the second direction.

[0041] In the accompanying drawings, the same parts use the same reference numerals. The drawings are not drawn to scale. Detailed Implementation

[0042] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0043] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0044] Dry etching equipment is a key piece of equipment used in semiconductor manufacturing and display device manufacturing for precise material removal. It utilizes etching gas or plasma to react chemically or physically with the surface of the workpiece to be etched, thereby removing the material from the surface of the workpiece and forming a specific pattern on it.

[0045] During the etching process, it is usually necessary to detect and control the pressure inside the reaction chamber within a suitable range. However, in related technologies, the pressure gauges used to detect the pressure inside the reaction chamber have a short lifespan.

[0046] In view of this, firstly, please refer to Figure 1This application provides a dry etching apparatus, which includes an etching chamber 10, a support member 20, a pressure detection component 30, and a communication component 40. The etching chamber 10 forms a cavity structure Q1 inside and includes a first wall 11 and a second wall 12 disposed opposite to each other in a first direction X. The support member 20 is located inside the cavity structure Q1 and is positioned along the first direction X on one side of the first wall 11. The side of the support member 20 facing away from the first wall 11 is spaced apart from the second wall 12. The side of the support member 20 facing away from the first wall 11 is configured to contact and support the workpiece to be etched. The pressure detection component 30 is located outside the etching chamber 10 and communicates with the inside of the cavity structure Q1. One end of the communication component 40 communicates with the cavity structure Q1, and the other end communicates with the pressure detection component 30. The etching chamber 10 also includes a side wall 13 that is arranged in a ring in the first direction X and is connected to both the first wall 11 and the second wall 12. The first wall 11, the side wall 13 and the second wall 12 form a cavity structure Q1. The side wall 13 is provided with a first communication port K1 that communicates with the interior of the cavity structure Q1. The communication component 40 communicates with the interior of the cavity structure Q1 through the first communication port K1.

[0047] The dry etching apparatus provided in this application utilizes etching gas or plasma to undergo a chemical or physical reaction with the surface of the workpiece to be etched, thereby removing material from the surface of the workpiece and forming a specific pattern. This dry etching apparatus can be applied to the manufacture of display devices, such as liquid crystal displays and organic light-emitting diode displays, to achieve high-precision patterning. Alternatively, this dry etching apparatus can also be applied to the semiconductor manufacturing field to manufacture integrated circuits, microprocessors, and memories, achieving high-precision pattern transfer and material removal.

[0048] Specifically, the dry etching apparatus includes an etching chamber 10 and a support member 20 located inside the etching chamber 10. The interior of the etching chamber 10 forms a cavity structure Q1. The etching chamber 10 includes a first wall 11 and a second wall 12 disposed opposite to each other in a first direction X. The support member 20 can be connected to the first wall 11. During the etching process, the workpiece to be etched is located within the cavity structure Q1 and supported by the side of the support member 20 away from the first wall 11. To create a good etching space, the side of the support member 20 away from the first wall 11 is spaced apart from the second wall 12. When the workpiece to be etched is supported by the support member 20, the workpiece to be etched is also spaced apart from the second wall 12, forming a certain space around the workpiece to ensure that the material on the surface of the workpiece has a certain reaction space with the etching gas or plasma, thus ensuring the etching effect on the workpiece.

[0049] Taking the application of dry etching equipment in the manufacture of display devices as an example, display devices typically include display panels, which have multi-layered structures. During the fabrication of the display panel, dry etching is used to shape specific layers into specific forms. For the aluminum layers in the display panel, chlorine (Cl2) or boron trichloride (BCl3) is typically used as the etching gas. The etching gas dissociates in the plasma and reacts with the aluminum to generate volatile aluminum trichloride (AlCl3). For the molybdenum layers in the display panel, a fluorine-containing gas (such as SF6) is typically used. The fluorine radicals generated by the dissociation of the etching gas in the plasma react with the molybdenum to generate volatile molybdenum hexafluoride (MoF6).

[0050] To monitor the gas pressure during the etching process, the dry etching equipment also includes a gas pressure detection component 30 and a communication component 40 connecting the gas pressure detection component 30 to the cavity structure Q1. Since the byproducts generated during the etching process, such as aluminum trichloride (AlCl3) or molybdenum hexafluoride (MoF6), are volatile, when the communication component 40 and the gas pressure detection component 30 are connected to the cavity structure Q1, these byproducts can flow from the cavity structure Q1 to the communication component 40 and the gas pressure detection component 30, and deposit to a certain extent on the sidewall 13 of the communication component 40 or the gas pressure detection component 30, causing corrosion to the communication component 40 and the gas pressure detection component 30 and affecting their service life.

[0051] In order to reduce the impact of the generated material on the connecting component 40 and the pressure detection component 30, the structure of the connecting component 40 and the etching chamber 10 is adjusted to reduce the probability of the generated material entering the interior of the connecting component 40 and the pressure detection component 30, thereby reducing the probability of the generated material depositing on the sidewall 13 of the connecting component 40 and the pressure detection component 30 and extending the lifespan of the connecting component 40 and the pressure detection component 30.

[0052] The etching chamber 10 includes a first wall 11 and a second wall 12 arranged opposite to each other along a first direction X, and a side wall 13 enclosing the first direction X and connected to both the first wall 11 and the second wall 12. The first wall 11, the side wall 13, and the second wall 12 enclose a cavity structure Q1. A support member 20 is located inside the cavity structure Q1 and is disposed on one side of the first wall 11, with the support member 20 spaced apart from the second wall 12. Preferably, the first direction X is vertical, meaning that when the workpiece to be etched is connected to the support member 20, the support member 20 initially supports the bottom of the workpiece, and the workpiece can initially maintain support contact with the support member 20 through its own gravity.

[0053] A first communication port K1, which communicates with the cavity structure Q1, is provided on the side wall 13. The connecting component communicates with the interior of the cavity structure Q1 through the first communication port K1. By placing the first communication port K1 on the side wall 13, the opening direction of the first communication port K1 relative to the interior of the cavity structure Q1 intersects with the first direction X. When the products inside the cavity structure Q1 are naturally deposited along the first direction X under the action of gravity, the direction of deposition of the products inside the cavity structure Q1 intersects with the opening direction of the first communication port K1 relative to the cavity structure Q1. This reduces the probability of the products naturally depositing at the first communication port K1 under the action of gravity, thereby reducing the probability of the products entering the connecting component 40 and the pressure detection component 30 during the natural deposition process. This further reduces the probability of the products depositing on the side wall 13 of the connecting component 40 and the pressure detection component 30, and extends the lifespan of the connecting component 40 and the pressure detection component 30.

[0054] In summary, in this embodiment, the dry etching apparatus utilizes etching gas or plasma to chemically or physically react with the surface of the workpiece to be etched, thereby removing material from the surface of the workpiece and forming a specific pattern. The dry etching apparatus includes an etching chamber 10 and a support member 20 located inside the etching chamber 10. The interior of the etching chamber 10 forms a cavity structure Q1. The etching chamber 10 includes a first wall 11 and a second wall 12 disposed opposite each other in a first direction X. The support member 20 can be connected to the first wall 11. During the etching process, the workpiece to be etched is located within the cavity structure Q1 and supported by the support member 20 on the side facing away from the first wall 11. To monitor the gas pressure during the etching process, the dry etching apparatus also includes a gas pressure detection component 30 and a communication component 40 connecting the gas pressure detection component 30 and the interior of the cavity structure Q1. During the etching process, the products generated by the reaction between the etching gas or plasma and the surface material of the workpiece are volatile. When the connecting component 40 and the pressure detection component 30 are connected to the interior of the cavity structure Q1, these products can flow from the interior of the cavity structure Q1 to the interior of the connecting component 40 and the pressure detection component 30. To reduce the impact of the products on the connecting component 40 and the pressure detection component 30, a first connecting port K1 connected to the cavity structure Q1 is provided on the side wall 13 of the etching chamber 10. The connecting component is connected to the interior of the cavity structure Q1 through the first connecting port K1. By setting the first connecting port K1 on the side wall 13, the opening direction of the first connecting port K1 relative to the cavity structure Q1 intersects with the first direction X. When the product inside the cavity structure Q1 is naturally deposited along the first direction X under the action of gravity, the deposition and falling direction of the product inside the cavity structure Q1 intersects with the opening direction of the first connecting port K1 relative to the cavity structure Q1. This reduces the probability of the product naturally depositing at the first connecting port K1 under the action of gravity, thereby reducing the probability of the product entering the connecting component 40 and the pressure detection component 30. This reduces the probability of the product depositing on the side wall 13 of the connecting component 40 and the pressure detection component 30, and extends the lifespan of the connecting component 40 and the pressure detection component 30.

[0055] In some embodiments, please refer to Figure 1 The dry etching apparatus also includes a gas supply assembly 50. The second wall 12 has a second communication port K2 that communicates with the cavity structure Q1. The gas supply assembly 50 is connected to the second communication port K2, and the orientation of the second communication port K2 relative to the cavity structure Q1 intersects with the orientation of the first communication port K1 relative to the cavity structure Q1. Optionally, the gas supply assembly 50 is configured to supply at least one of chlorine, boron trichloride, or a fluorine-containing gas to the cavity structure Q1.

[0056] The gas supply assembly 50 is connected to the interior of the cavity structure Q1 and is used to supply etching gas to the cavity structure Q1. When etching an aluminum layer structure, the gas supply assembly 50 supplies chlorine or boron trichloride to the cavity structure Q1. When etching a molybdenum layer structure, the gas supply assembly 50 supplies a fluorine-containing gas, such as sulfur hexafluoride (SF6), to the cavity structure Q1. When etching layer structures of other materials, the gas supply assembly 50 can also supply other etching gases to the cavity structure Q1. Alternatively, the gas supply assembly 50 can also supply other gases required during the etching process to the cavity structure Q1.

[0057] The gas supply assembly 50 is connected to the interior of the cavity structure Q1 through the second connection port K2. The second connection port K2 is located on the second wall 12. When the workpiece to be etched is supported by the support member 20, the side of the workpiece to be etched away from the support member 20 faces the second wall 12. By placing the second connection port K2 on the second wall 12, the etching gas can flow directly to the workpiece to be etched after entering the cavity structure Q1, thereby improving the contact efficiency between the etching gas and the workpiece to be etched and thus improving the efficiency of the etching process.

[0058] Furthermore, the orientation of the second connecting port K2 relative to the cavity structure Q1 intersects with the orientation of the first connecting port K1 relative to the cavity structure Q1. During the etching process, the gas pressure detection component 30 is connected to the interior of the cavity structure Q1 through the connecting component 40 and the first connecting port K1. As the etching gas enters the cavity structure Q1 through the second connecting port K2, a certain flow field effect is formed inside the second connecting port K2 and the cavity structure Q1. By intersecting the orientation of the second connecting port K2 relative to the cavity structure Q1 with the orientation of the first connecting port K1 relative to the cavity structure Q1, the flow field effect generated by the etching gas during its entry into the cavity structure Q1 can influence the original gas generation inside the cavity structure Q1. The flow direction intersects with the orientation of the first connecting port K1 relative to the cavity structure Q1, thereby reducing the probability of gas inside the cavity structure Q1 flowing into the connecting component 40, and thus reducing the probability of the products generated during the etching process entering the connecting component 40.

[0059] In some embodiments, please refer to Figure 1 The dry etching equipment also includes a vacuum assembly 60. The first wall 11 has a third communication port K3 that communicates with the cavity structure Q1. The vacuum assembly 60 is connected to the third communication port K3. The orientation of the third communication port K3 relative to the cavity structure Q1 is intersected with the orientation of the first communication port K1 relative to the cavity structure Q1.

[0060] The vacuum assembly 60 is connected to the interior of the cavity structure Q1 and is used to draw gas from the cavity structure Q1 to adjust the internal pressure of the cavity structure Q1, so that the cavity structure Q1 can maintain a suitable pressure range throughout the etching process.

[0061] The vacuum assembly 60 is connected to the interior of the cavity structure Q1 through the third connection port K3. The third connection port K3 is located on the first wall 11. When the part to be etched is supported by the support member 20, the side of the part to be etched facing the support member 20 also faces the first wall 11. During the process of the vacuum assembly 60 evacuating the gas inside the cavity structure Q1, a certain flow field effect is generated in the third connection port K3 and inside the cavity structure Q1, which can make the contact between the part to be etched and the support member 20 more stable.

[0062] The gas supply assembly 50 supplies gas into the cavity structure Q1 through the second communication port K2 on the second wall 12, and the vacuum assembly 60 evacuates the gas inside the cavity structure Q1 through the third communication port K3 on the first wall 11. Under the action of the gas supply assembly 50 and the vacuum assembly 60, the gas inside the cavity structure Q1 has a flow tendency along the first direction X. At the same time, the side wall 13 is arranged around the first direction X, and a first communication port K1 is provided on the side wall 13 to communicate with the communication assembly 40 and the pressure detection assembly 30. The first communication port K1 is located on the side wall 13 so that the direction of the gas inside the cavity structure Q1 passing through the first communication port K1 during the flow process intersects the opening direction of the first communication port K1 relative to the cavity structure Q1. This reduces the probability of the gas inside the cavity structure Q1 flowing into the first communication port K1, thereby reducing the probability of the gas inside the cavity structure Q1 entering the first communication port K1, and thus reducing the probability of the generated products entering the communication assembly 40 and the pressure detection assembly 30.

[0063] In some embodiments, please refer to Figure 1 The first connecting port K1 is located in the first direction X between the first wall 11 and the surface of the support member 20 facing away from the first wall 11. Optionally, the distance D between the first connecting port K1 and the surface of the first wall 11 and the support member 20 facing away from the first wall 11 in the first direction X is 5cm≤D≤15cm. Optionally, the first wall 11 is located on one side of the second wall 12 along the direction of gravity. Optionally, the side wall 13 is arranged in the vertical direction.

[0064] During the etching process, the etching gas enters the cavity structure Q1 through the second connection port K2 on the second wall 12 and reacts with the surface material of the part to be etched. Correspondingly, the generated products are initially located between the support member 20 and the second wall 12. To reduce the probability of the products entering the first connection port K1, the first connection port K1 is located on the side of the support member 20 facing the first wall 11, which reduces the probability of the products contacting the first connection port K1 at the beginning of their formation. After the products are generated, under the suction of the vacuum assembly 60 and the deposition effect of their own gravity, the products tend to flow towards the first wall 11. During the flow of the products, they pass through the first connection port K1 located between the support member 20 and the first wall 11. Since the products already have a certain initial flow action, the products flow through the first connection port K1 under the action of inertia and flow out of the cavity structure Q1 through the third connection port K3.

[0065] Optionally, a plurality of third connecting ports K3 may be provided on the first wall 11. The third connecting ports K3 are located at the edge of the first wall 11. By setting the third connecting ports K3 at the edge of the first wall 11, the third connecting ports K3 can be set close to the side wall 13 and form a suction force along the side wall 13, thereby increasing the inertia of the generated material when it passes through the first connecting port K1 and further reducing the probability of the generated material entering the first connecting port K1.

[0066] To ensure the accuracy of air pressure detection by the air pressure detection component 30 during the etching process, the distance between the first connecting port K1 and the workpiece to be etched should not be too far. Therefore, the distance between the first connecting port K1 and the support member 20 in the first direction X is set between 5cm and 15cm to ensure the accuracy of air pressure detection by the air pressure detection component 30 during the etching process. Preferably, the distance between the first connecting port K1 and the support member 20 in the first direction X is 10cm.

[0067] When the cavity structure Q1 is filled with gas, the direction of gas flow is also affected by the inner walls of the cavity structure Q1, namely the extension direction and shape of the first wall 11, the second wall 12, and the side wall 13. In order to ensure the smooth flow of gas inside the cavity structure Q1, the side wall 13 is arranged vertically, corresponding to the direction of gravity, and the first wall 11 is located on one side of the second wall 12 along the direction of gravity.

[0068] In some embodiments, please refer to Figure 1The air pressure detection assembly 30 includes a first detection element 31 and a second detection element 32. The range of the first detection element 31 is smaller than the range of the second detection element 32. The first detection element 31 and the second detection element 32 are connected in parallel within the cavity structure Q1 via a connecting assembly 40. Optionally, the range of the first detection element 31 is 0 Torr-0.1 Torr, and the range of the second detection element 32 is 0 Torr-2 Torr. Optionally, the connecting assembly 40 includes a main connecting path 41 communicating with the interior of the cavity structure Q1, and a first branch 42 and a second branch 43 connected in parallel to the main connecting path 41. The first branch 42 communicates with the first detection element 31, and the second branch 43 communicates with the second detection element 32. Optionally, at least a portion of the main connecting path 41 extends along the direction of gravity, and both the first branch 42 and the second branch 43 extend horizontally. Optionally, both the first branch 42 and the second branch 43 are connected to the middle of the main connecting path 41 along its extension direction. Optionally, both the first branch 42 and the second branch 43 are located above the first connecting port K1 along the direction of gravity. Optionally, a first valve F1 is provided on the first branch 42, which is configured to control the opening and closing of the first branch 42, and a second valve F2 is provided on the second branch 43, which is configured to control the opening and closing of the second branch 43.

[0069] During the etching process, different etching requirements typically necessitate different pressure conditions. To cover a wide pressure range and ensure accurate measurement of the internal pressure of the cavity structure Q1 under various process conditions, the pressure detection assembly 30 includes a first detection element 31 and a second detection element 32 with different measuring ranges. The measuring range of the first detection element 31 is smaller than that of the second detection element 32. The first detection element 31 and the second detection element 32 are connected in parallel to the interior of the cavity structure Q1 through a connecting assembly 40. In other words, the communication between the first detection element 31 and the second detection element 32 and the interior of the cavity structure Q1 is independent and does not affect each other. For example, the first detection element 31 includes a first barometer, and the second detection element 32 includes a second barometer.

[0070] When the etching process is under low pressure, the first detection element 31 is connected to the interior of the cavity structure Q1 through the connecting component 40, while the second detection element 32 can be isolated from the interior of the cavity structure Q1. The first detection element 31 detects the pressure inside the cavity structure Q1. When the etching process is under high pressure, the second detection element 32 is connected to the interior of the cavity structure Q1 through the connecting component 40, while the first detection element 31 can be isolated from the interior of the cavity structure Q1. The second detection element 32 detects the pressure inside the cavity structure Q1.

[0071] In practical applications, when the first detection element 31 detects lower pressures, its measuring range can be 0 Torr - 0.1 Torr. When the second detection element 32 detects higher pressures, its measuring range can be 0 Torr - 2 Torr.

[0072] To facilitate communication between the pressure detection assembly 30 and the interior of the cavity structure Q1, the communication assembly 40 includes a main communication path 41 and a first branch 42 and a second branch 43 connected in parallel to the main communication path 41. The main communication path 41 communicates with the interior of the cavity structure Q1, the first branch 42 communicates with the first detection element 31, and the second branch 43 communicates with the second detection element 32. Optionally, the pressure detection assembly 30 may further include a third detection element. Correspondingly, the communication assembly 40 also includes a third branch connected to the main communication path 41 and arranged in parallel with the first branch 42 and the second branch 43. The third branch communicates with the third detection element.

[0073] In fact, once the connecting component 40 is connected to the interior of the cavity structure Q1, inevitably some of the generated material will pass from inside the cavity structure Q1 into the connecting component 40. To reduce the probability of the generated material entering the pressure detection component 30 along the connecting component 40, a specific design is made for the shape of the pipe in the connecting component 40.

[0074] At least a portion of the main connecting path 41 extends along the direction of gravity, while the first branch 42 and the second branch 43 both extend horizontally. When the generated material passes through the portion of the main connecting path 41 extending along the direction of gravity, it is limited by the extension of the pipe wall of the main connecting path 41 and can only flow along the direction of gravity. Once the material flows along the direction of gravity, it maintains a certain inertia in its flow direction without being subjected to other external forces. When it flows to the first branch 42 or the second branch 43, the first branch 42 and the second branch 43 bend relative to the main connecting path 41, and most of the generated material will be deposited on the pipe wall of the main connecting path 41, thereby reducing the probability of the generated material entering the interior of the pressure detection component 30.

[0075] Optionally, both the first branch 42 and the second branch 43 are connected to the middle of the connecting main channel 41 along its extension direction. When the product flows inside the connecting main channel 41, it can flow through the connection point between the first branch 42 and the second branch 43 and the connecting main channel 41 to the end of the connecting main channel 41. With the above arrangement, even if the product deposits in the connecting main channel 41, it will not affect the flow at the connection point between the first branch 42 and the second branch 43 and the connecting main channel 41.

[0076] Furthermore, when a portion of the connecting pipe extends along the direction of gravity, the first branch 42 and the second branch 43 are located above the first connecting port K1 along the direction of gravity. When the product is in the connecting pipe, it naturally settles under the influence of gravity. Since the first branch 42 and the second branch 43 are both located at an upper position, the product will not drift to one side of the first branch 42 and the second branch 43 under its own gravity, which can reduce the probability of the product entering the interior of the first branch 42 and the second branch 43, and thus reduce the probability of the product entering the interior of the first detection element 31 and the second detection element 32.

[0077] Optionally, a first valve F1 is provided on the first branch 42 to control the on / off state of the first branch 42, and a second valve F2 is provided on the second branch 43 to control the on / off state of the second branch 43. When the first detection element 31 is needed and the second detection element 32 is not needed, the first valve F1 controls the first branch 42 to be open, and the second valve F2 controls the second branch 43 to be closed. When the second detection element 32 is needed and the first detection element 31 is not needed, the second valve F2 controls the second branch 43 to be open, and the first valve F1 controls the first branch 42 to be closed.

[0078] In some embodiments, please refer to Figure 2 The pressure detection assembly 30 includes a first detection element 31, and the communication assembly 40 includes a first conduit 44 connecting the first detection element 31 to the interior of the cavity structure Q1. The dry etching apparatus also includes a heating element 70, which is wrapped around the outer wall of the first conduit 44. Optionally, the outer wall of the first conduit 44 has a first protrusion 441 protruding outward, and at least a portion of the heating element 70 covers the first protrusion 441. Optionally, the outer wall of the first conduit 44 has a first recess forming inward, and at least a portion of the heating element 70 covers the first recess. Optionally, the outer wall of the first conduit 44 includes a first arcuate segment 443, and at least a portion of the heating element 70 covers the first arcuate segment 443. Optionally, the outer diameter of the first arcuate segment 443 is uniform along its extension direction.

[0079] In this embodiment, the dry etching apparatus further includes a heating element 70, which is wrapped around the outer wall of the first conduit 44. The heating element 70 is used to heat the first conduit 44, increasing the temperature of the internal environment of the first conduit 44. When the product is transported in the first conduit 44, the product may deposit on the wall of the first conduit 44. Increasing the temperature inside the first conduit 44 helps maintain the gas flow state inside the first conduit 44, reducing the deposition of the product.

[0080] To ensure the heating element 70 can more stably enclose the outer wall of the first conduit 44 and reduce the probability of relative displacement between the heating element 70 and the first conduit 44, a first protrusion 441 is provided on the outer wall of the first conduit 44, with at least a portion of the heating element 70 covering the first protrusion 441. Because the first protrusion 441 protrudes, its outer diameter is increased, creating a dimensional change relative to other locations in the first conduit 44. When the heating element 70 covers the first protrusion 441, this dimensional change effectively forms a limiting structure, reducing the probability of relative displacement between the heating element 70 and the first conduit 44, thus ensuring the heating effect of the heating element 70 on the first conduit 44.

[0081] Optionally, the outer wall of the first conduit 44 may be recessed inward to form a first recess, and at least part of the heating element 70 covers the first recess. Due to the recessed design of the first recess, the outer diameter of the first recess is reduced, which can create a size change relative to the rest of the first conduit 44. When the heating element 70 covers the first recess, due to the size change between the first recess and the rest of the position, the first recess is equivalent to forming a certain degree of limiting structure, which can reduce the probability of relative displacement of the heating element 70 relative to the first conduit 44, so as to ensure the heating effect of the heating element 70 on the first conduit 44.

[0082] Optionally, the outer wall of the first conduit 44 may include a first arc-shaped segment 443, and at least part of the heating element 70 covers the first arc-shaped segment 443. In the first arc-shaped segment 443, the outer wall of the first conduit 44 includes a protrusion extending to one side and a recess extending to one side, with the protrusion and recess corresponding to each other. The arrangement of the first arc-shaped segment 443 allows for a dimensional change relative to the rest of the first conduit 44. When the heating element 70 covers the first arc-shaped segment 443, due to the dimensional change between the first arc-shaped segment 443 and other locations, a certain degree of limiting structure is formed at the first arc-shaped segment 443, reducing the probability of relative displacement of the heating element 70 relative to the first conduit 44, thereby ensuring the heating effect of the heating element 70 on the first conduit 44.

[0083] Furthermore, to ensure the effective wrapping of the heating element 70 around the outer wall of the first pipe 44, the outer diameter of the first arc-shaped segment 443 is constant throughout its extension direction. In other words, within the extension range of the first arc-shaped segment 443, the perimeter of its radial cross-section is constant, and the amount of material required for the heating element 70 to wrap around the outer wall of the first arc-shaped segment 443 is also constant. This arrangement improves the uniformity of the wrapping of the heating element 70 around the first arc-shaped segment 443. Preferably, the outer diameter of other locations on the first pipe 44 is equal to the outer diameter of the first arc-shaped segment 443 to further improve the uniformity of the wrapping of the heating element 70 around the first pipe 44.

[0084] In some embodiments, please refer to Figure 2 The air pressure detection assembly 30 includes a first detection element 31, and the connecting assembly 40 includes a first pipe 44 connecting the first detection element 31 to the interior of the cavity structure Q1. The inner sidewall of the first pipe 44 includes a second arc-shaped segment 444. Optionally, the second arc-shaped segment 444 is connected to the first detection element 31. Optionally, the inner diameter of the second arc-shaped segment 444 is uniform everywhere. Optionally, the outer sidewall of the first pipe 44 includes a first arc-shaped segment 443, and the first arc-shaped segment 443 and the second arc-shaped segment 444 are correspondingly arranged.

[0085] When the product is transported in the first pipe, the direction of transport of the product is affected by the shape of the inner wall of the first pipe. In this embodiment, the inner wall of the first pipe 44 includes a second arc-shaped segment 444.

[0086] When the product is transported in the second arc segment 444, some of the product is located in the second arc segment 444 and does not contact the inner wall. The flow velocity of this part of the product is uneven. Inside the specific arc structure, with the center as the reference, the flow velocity of the product on the outer side is usually higher, while the flow velocity of the product on the inner side is lower. The airflow in the high-velocity region can effectively "blow away" the product. This velocity difference makes it difficult for the product to be deposited on the pipe sidewall 13.

[0087] When the product is transported in the second arc segment 444, some of the product comes into contact with the inner wall. In the second arc segment 444, the flow of the product generates centrifugal force, causing the product to shift towards the middle of the pipe and away from the side wall 13 of the pipe, thereby reducing the probability of the product being deposited on the side wall 13 of the pipe.

[0088] Optionally, the second arc-shaped segment 444 is located in the first conduit 44 on the side closer to the first detection element 31. The second arc-shaped segment 444 is connected to the first detection element 31, and its arrangement reduces the probability of the product entering the interior of the first detection element 31. To ensure uniform flow of the product in the second arc-shaped segment 444, its inner diameter is constant throughout. When arc-shaped segments are provided on both the outer and inner walls of the first conduit 44, the first arc-shaped segment 443 and the second arc-shaped segment 444 are positioned correspondingly to reduce the material consumption of the first conduit 44.

[0089] In this embodiment, the second pipeline and the first pipeline 44 can have the same structure. The heating element 70 can also be installed on the second pipeline. The installation method and beneficial effects are similar to those of the first pipeline 44, and will not be described in detail here.

[0090] In some embodiments, please refer to Figures 3 to 5 The dry etching apparatus also includes a blocking structure 80, which is located inside the cavity structure Q1 or the connecting component 40. Optionally, the blocking structure 80 includes a blocking tube 81, which is located inside the cavity structure Q1. One end of the blocking tube 81 is connected to the first connecting port K1, and the other end of the blocking tube 81 extends into the cavity structure Q1 and is spaced apart from the sidewall 13. Optionally, the blocking structure 80 includes a blocking member 82, which is located inside the cavity structure Q1. The blocking member 82 is connected to the sidewall 13 and located on one side of the first connecting port K1. The blocking member 82 is spaced apart from the first connecting port K1, and the projection of the blocking member 82 on the sidewall 13 at least partially overlaps with the projection of the first connecting port K1 on the sidewall 13. Optionally, the blocking member 82 is inclined toward the first wall 11 in a direction away from the side wall 13. Optionally, the blocking structure 80 includes a filter structure 83, which is located inside the connecting component 40, and the periphery of the filter structure 83 is connected to the inner side wall of the connecting component 40.

[0091] The blocking structure 80 can be located inside the cavity structure Q1 to block the product from entering the connecting component 40. Alternatively, the blocking structure 80 can also be located inside the connecting component 40 to block the transmission of the product within the connecting component 40.

[0092] Specifically, when the blocking structure 80 is located inside the cavity structure Q1, the blocking structure 80 includes a blocking tube 81, which is connected to the first connecting port K1 and extends into the cavity structure Q1. That is, with the blocking tube 81 in place, the connecting component 40 is connected to the blocking tube 81, and the connection point between the connecting component 40 and the cavity structure Q1 is inside the cavity structure Q1, not on the sidewall 13. Through this arrangement, when the generated material flowing along the sidewall 13 passes through the first connecting port K1, due to the blocking tube 81, this portion of the generated material does not flow through the first connecting port K1, effectively reducing the probability that the generated material flowing along the sidewall 13 will enter the connecting component 40 through the first connecting port K1.

[0093] Optionally, when the blocking structure 80 is located inside the cavity structure Q1, the blocking structure 80 includes a blocking member 82. The blocking member 82 is connected to the side wall 13 and located on one side of the first communication port K1. The blocking member 82 can shield the first communication port K1. With the above arrangement, when the generated material flowing along the side wall 13 passes through the first communication port K1, due to the setting of the blocking member 82, this part of the generated material flows from the side wall 13 to the blocking member 82. Since the blocking member 82 is spaced apart from the first communication port K1, and the blocking member 82 can partially shield the first communication port, this part of the generated material does not flow through the first communication port K1, which can effectively reduce the probability that the generated material flowing along the side wall 13 enters the interior of the communication component 40 through the first communication port K1.

[0094] Furthermore, to reduce the probability of product deposition on the barrier 82, the barrier 82 is inclined, with the barrier 82 inclined towards the first wall 11 in a direction away from the sidewall 13. When the product flows along the sidewall 13 to the barrier 82, due to the inclined arrangement of the barrier 82, the product has an initial velocity flowing towards the first wall 11 and can continue to flow towards the first wall 11 based on inertia, thereby reducing the probability of product deposition on the barrier 82. At the same time, due to the inclined arrangement of the barrier 82, the product flowing through the barrier 82 flows towards the side away from the first connection port K1, thereby reducing the probability of the product entering the connecting component 40 through the first connection port K1.

[0095] When the blocking structure 80 is located inside the connecting component 40, the blocking structure 80 includes a filter structure 83, which can filter the products flowing through the connecting component 40 to reduce the probability of the products entering the air pressure detection component 30.

[0096] In some embodiments, please refer to Figure 2 and Figure 3The dry etching apparatus also includes a heating element 70, configured to heat the connecting assembly 40. Optionally, the connecting assembly 40 includes a first connecting section 45 communicating with the first connecting port K1, and the heating element 70 is wrapped around the outer wall of the first connecting section 45. Optionally, the connecting assembly 40 includes a second connecting section 46 communicating with the pressure detection assembly 30, and the heating element 70 is wrapped around the outer wall of the second connecting section 46. Optionally, the connecting assembly 40 includes a bent section 47, and the heating element 70 is wrapped around the outer wall of the bent section 47. Optionally, the connecting assembly 40 is provided with a valve structure, and the heating element 70 is wrapped around the outer wall of the valve structure.

[0097] The heating element 70 is used to heat the connecting assembly 40 to increase the temperature of the internal environment of the connecting assembly 40 and reduce the probability of product deposition inside the connecting assembly 40. The connecting assembly 40 is used to connect the cavity structure Q1 and the pressure detection assembly 30.

[0098] Optionally, the connecting component 40 includes a first connecting section 45 communicating with the cavity structure Q1. The inner diameter of the first connecting section 45 is typically smaller than the size of the cavity structure Q1. The flow velocity of the product changes significantly within the first connecting section 45. To reduce the probability of product deposition within the first connecting section 45, the heating element 70 is wrapped around the first connecting section 45. Optionally, the connecting component 40 includes a second connecting section 46 communicating with the pressure detection component 30. The inner diameter of the second connecting section 46 is typically smaller than the inner diameter of the pressure detection component 30. The flow velocity of the product changes significantly within the second connecting section 46. To reduce the probability of product deposition within the second connecting section 46, the heating element 70 is wrapped around the second connecting section 46.

[0099] Optionally, the connecting component 40 includes a bend section 47, where the flow velocity and direction of the product change significantly. To reduce the probability of product deposition within the bend section 47, the heating element 70 is wrapped around the bend section 47. Optionally, the connecting component 40 is provided with a valve structure, the inner diameter of which is generally different from the inner diameter of the connecting component 40. To reduce the probability of product deposition within the valve structure, the heating element 70 is wrapped around the valve structure.

[0100] In some embodiments, please refer to Figure 6 and Figure 7The connecting component 40 includes a first portion B1 extending along the second direction Y and communicating with a first connecting port K1, a second portion B2 extending along the first direction X and communicating with the first portion B1, and a bent portion B3 connecting the first portion B1 and the second portion B2. Optionally, the bent portion B3 includes a rounded corner structure B31, and the first portion B1 and the second portion B2 are smoothly connected by the rounded corner structure B31. Optionally, the inner diameter of the bent portion B3 is larger than the inner diameter of the first portion B1. Optionally, the inner diameter of the bent portion B3 is larger than the inner diameter of the second portion B2.

[0101] In the actual operation of the connecting component 40, the connecting component 40 typically includes a bent structure. When the first connecting port K1 is provided on the side wall 13, the connecting component 40 includes a first portion B1 extending along the second direction Y and communicating with the first connecting port K1, a second portion B2 extending along the first direction X and communicating with the first portion B1, and a bent portion B3 connecting the first portion B1 and the second portion B2. The extension direction of the connecting component 40 changes at the bent portion B3.

[0102] To reduce the probability of product deposition at the bend portion B3, the bend portion B3 includes a rounded corner structure B31, through which the first part B1 and the second part B2 are smoothly connected, thereby improving the uniformity of the change in flow direction of the product when passing through the bend portion B3. Optionally, the inner diameter of the bend portion B3 is larger than that of the first part B1 and larger than that of the second part B2. Increasing the inner diameter of the bend portion B3 relative to the first part B1 and the second part B2 increases the space available for the product when passing through the bend portion B3, thereby reducing the probability of product deposition at the bend portion B3.

[0103] In some embodiments, the connecting component 40 includes a first connecting segment 45 communicating with a first connecting port K1, the inner diameter of the first connecting segment 45 gradually decreasing in the direction away from the first connecting port K1. Optionally, the end of the first connecting segment 45 facing the first connecting port forms a first hemispherical end, the diameter of the side of the first hemispherical end facing the first connecting port K1 being larger than the diameter of the side of the first hemispherical end away from the first connecting port K1. Optionally, the connecting component 40 further includes a second connecting segment 46 communicating with a pressure detection component 30, the inner diameter of the second connecting segment 46 gradually increasing in the direction approaching the pressure detection component 30.

[0104] Under the influence of the gas supply assembly 50 and the vacuum assembly 60 on the interior of the cavity structure Q1, the flow field effect inside the cavity structure Q1 can have a certain impact on the part of the connecting assembly 40 that is directly connected to the first connecting port K1. Therefore, the connecting assembly 40 includes a first connecting section 45 that connects to the first connecting port K1, and the inner diameter of the first connecting section 45 gradually decreases in the direction away from the first connecting port. When the product is inside the first connecting section 45, based on the change in the inner diameter of the first connecting section 45, the product is deposited as much as possible in the first connecting section 45, thereby reducing the amount of product entering the gas pressure detection assembly 30. Since the first connecting section 45 is directly connected to the interior of the cavity structure Q1, the interior of the first connecting section 45 can be affected by the flow field effect inside the cavity structure Q1, and the product deposited inside the first connecting section 45 can be discharged from the cavity structure Q1 under the action of the vacuum assembly 60.

[0105] Specifically, the end of the first connecting segment 45 facing the first connection port forms a first hemispherical end, and the diameter of the side of the first hemispherical end facing the first connection port K1 is larger than the diameter of the side of the first hemispherical end away from the first connection port K1. By setting the end of the first connecting segment 45 facing the first connection port as a first hemispherical end, a transition zone can be formed at the position where the first connecting segment 45 communicates with the cavity structure Q1. The hemispherical structure shape can effectively block the generated material and also facilitate the flow of generated material inside the cavity structure Q1 through the flow field effect.

[0106] Optionally, the connecting component 40 further includes a second connecting section 46 communicating with the pressure detection component 30. The inner diameter of the second connecting section 46 gradually increases along the direction approaching the pressure detection component 30. As the product travels within the second connecting section 46, the increased inner diameter maintains a certain distance between the product and the inner wall of the preceding section 46. This prevents the product from easily contacting the inner wall of the second connecting section 46 along its original flow direction, thereby reducing the probability of product deposition in the second connecting section 46.

[0107] Secondly, embodiments of this application provide a dry etching method based on the dry etching apparatus provided in the first aspect of this application. The dry etching apparatus includes a heating element 70, which is wrapped around the outer wall of the connecting component 40. The dry etching method includes: heating the connecting component 40 by the heating element 70 to increase the internal temperature of the connecting component 40, thereby increasing the detection value of the pressure detection component 30 and further increasing the temperature of the heating element 70.

[0108] In the etching process, when the detection value of the air pressure detection component 30 increases, it indicates that the air pressure inside the cavity structure Q1 is increasing, resulting in more deposits inside the transmission component. By increasing the temperature of the heating element 70, the temperature inside the connecting component 40 is increased, maintaining the gas flow state inside the connecting component 40 and reducing the deposition of deposits.

[0109] Although the invention has been described with reference to preferred embodiments, various modifications can be made and components can be replaced with equivalents without departing from the scope of the invention. In particular, the technical features mentioned in the various embodiments can be combined in any manner as long as there is no structural conflict. The invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A dry etching apparatus, characterized in that, include: An etching chamber with an internal cavity structure, the etching chamber including a first wall and a second wall disposed opposite to each other in a first direction; A support member is located inside the cavity structure and on one side of the first wall along the first direction. The side of the support member facing away from the first wall is spaced apart from the second wall. The side of the support member facing away from the first wall is configured to contact the workpiece to be etched and support the workpiece to be etched. A pressure detection component is located outside the etching chamber and communicates with the interior of the cavity structure; A connecting component, one end of which is connected to the cavity structure and the other end of which is connected to the air pressure detection component; The etching chamber further includes a sidewall that surrounds the first direction and is connected to both the first wall and the second wall. The first wall, the sidewall, and the second wall together form the cavity structure. The sidewall has a first communication port that communicates with the interior of the cavity structure. The communication component communicates with the interior of the cavity structure through the first communication port.

2. The dry etching apparatus according to claim 1, characterized in that, The first communication port is located in the first direction between the first wall and the surface of the support member facing away from the first wall; Preferably, the distance D between the first communication opening and the surface of the first wall and the support member opposite to the first wall in the first direction is 5cm≤D≤15cm; Preferably, the first wall is located on one side of the second wall along the direction of gravity; Preferably, the sidewall is arranged in a vertical direction; Preferably, the dry etching apparatus further includes a gas supply component, the second wall has a second communication port communicating with the cavity structure, the gas supply component is connected to the second communication port, and the orientation direction of the second communication port relative to the cavity structure intersects with the orientation direction of the first communication port relative to the cavity structure; Preferably, the gas supply assembly is configured to supply at least one of chlorine, boron trichloride, or fluorine-containing gas to the cavity structure. Preferably, the dry etching apparatus further includes a vacuum pumping component, the first wall having a third communication port communicating with the cavity structure, the vacuum pumping component communicating with the third communication port, and the orientation direction of the third communication port relative to the cavity structure intersecting the orientation direction of the first communication port relative to the cavity structure.

3. The dry etching apparatus according to claim 1, characterized in that, The air pressure detection component includes a first detection element and a second detection element. The range of the first detection element is smaller than the range of the second detection element. The first detection element and the second detection element are connected in parallel inside the cavity structure through the communication component. Preferably, the measuring range of the first detection element is 0 Torr-0.1 Torr, and the measuring range of the second detection element is 0 Torr-2 Torr; Preferably, the communication component includes a main communication path communicating with the interior of the cavity structure and a first branch and a second branch connected in parallel to the main communication path, wherein the first branch is connected to the first detection element and the second branch is connected to the second detection element; Preferably, at least a portion of the main connecting road extends along the direction of gravity, and both the first branch and the second branch extend in the horizontal direction; Preferably, both the first branch and the second branch are connected to the middle of the main connecting road along its extension direction; Preferably, both the first branch and the second branch are located above the first connecting opening along the direction of gravity; Preferably, a first valve is provided on the first branch, and the first valve is configured to control the opening and closing of the first branch; a second valve is provided on the second branch, and the second valve is configured to control the opening and closing of the second branch.

4. The dry etching apparatus according to claim 1, characterized in that, The air pressure detection component includes a first detection element, the communication component includes a first pipeline connecting the first detection element and the interior of the cavity structure, and the dry etching equipment further includes a heating element, which is wrapped around the outer wall of the first pipeline. Preferably, the outer side wall of the first pipeline has a first protrusion protruding outward, and at least part of the heating element covers the first protrusion; Preferably, the outer wall of the first pipe is recessed inward to form a first recess, and at least a portion of the heating element covers the first recess; Preferably, the outer wall of the first pipeline includes a first arc-shaped segment, and at least a portion of the heating element covers the first arc-shaped segment; Preferably, the outer diameter of the first arc segment is the same everywhere along its extension direction.

5. The dry etching apparatus according to claim 1, characterized in that, The air pressure detection component includes a first detection element, and the communication component includes a first pipeline connecting the first detection element to the interior of the cavity structure, wherein the inner wall of the first pipeline includes a second arc-shaped segment. Preferably, the second arc-shaped segment is connected to the first detection element; Preferably, the inner diameter of the second arc segment is the same everywhere; Preferably, the outer wall of the first pipeline includes a first arc-shaped segment, and the first arc-shaped segment and the second arc-shaped segment are correspondingly arranged.

6. The dry etching apparatus according to claim 1, characterized in that, The dry etching apparatus further includes a barrier structure, which is located inside the cavity structure or the connecting component; Preferably, the blocking structure includes a blocking tube located inside the cavity structure, one end of the blocking tube communicating with the first communication port, and the other end of the blocking tube extending into the cavity structure and spaced apart from the side wall; Preferably, the blocking structure includes a blocking member located inside the cavity structure. The blocking member is connected to the side wall and located on one side of the first communication port. The blocking member and the first communication port are spaced apart. The projection of the blocking member on the side wall and the projection of the first communication port on the side wall at least partially overlap. Preferably, the blocking member is inclined toward the first wall in a direction away from the side wall; Preferably, the blocking structure includes a filter structure located inside the connecting component, and the periphery of the filter structure is connected to the inner wall of the connecting component.

7. The dry etching apparatus according to claim 1, characterized in that, The dry etching apparatus further includes a heating element configured to heat the connecting component; Preferably, the communication component includes a first connecting segment communicating with the first communication port, and the heating element is wrapped around the outer wall of the first connecting segment; Preferably, the communication component includes a second connecting section communicating with the air pressure detection component, and the heating element is wrapped around the outer wall of the second connecting section; Preferably, the connecting component includes a bent section, and the heating element is wrapped around the outer wall of the bent section; Preferably, the connecting component is provided with a valve structure, and the heating element is wrapped around the outer wall of the valve structure.

8. The dry etching apparatus according to claim 1, characterized in that, The connecting component includes a first part extending along a second direction and communicating with the first connecting port, a second part extending along the first direction and communicating with the first part, and a bent portion connecting the first part and the second part, wherein the second direction intersects with the first direction; Preferably, the bent portion includes a rounded corner structure, and the first portion and the second portion are smoothly connected by the rounded corner structure; Preferably, the inner diameter of the bent portion is larger than the inner diameter of the first portion; Preferably, the inner diameter of the bent portion is larger than the inner diameter of the second portion.

9. The dry etching apparatus according to claim 1, characterized in that, The connecting component includes a first connecting segment communicating with the first connecting port, wherein the inner diameter of the first connecting segment gradually decreases in the direction away from the first connecting port; Preferably, the end of the first connecting segment facing the first connecting port forms a first hemispherical end, and the diameter of the first hemispherical end facing the first connecting port is larger than the diameter of the first hemispherical end away from the first connecting port. Preferably, the connecting component further includes a second connecting section communicating with the air pressure detection component, wherein the inner diameter of the second connecting section gradually increases in the direction approaching the air pressure detection component.

10. A dry etching method, characterized in that, Based on the dry etching apparatus according to any one of claims 1-9, the dry etching apparatus further includes a heating element, the heating element being wrapped around the outer wall of the communicating component, and the dry etching method comprising: The heating element heats the connecting component to increase the internal temperature of the connecting component, resulting in a larger detection value from the air pressure detection component and an increase in the temperature of the heating element.

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