Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method capable of suppressing contamination of a substrate are provided. A substrate processing apparatus (1) includes a processing liquid supply section (20), a heating section (60) that heats a substrate (Wp), a substrate (Wd) by irradiating light to the substrate (Wp), the substrate (Wd), a cover (63) that has a facing surface (631) facing the substrate (Wp), the substrate (Wd) held by a rotary holding section (10), and that transmits light irradiated by the heating section (60), and a control device (80) that controls the supply of a processing liquid (Lp) to the substrate (Wp) being rotated, thereby performing processing of the substrate (Wp), and performs a first drying process that dries the facing surface (631) of the cover (63) by heating the substrate (Wd) held by the rotary holding section (10) by irradiating light to the substrate (Wd).

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] A monolithic substrate processing apparatus is known in which a processing liquid is supplied to a substrate, such as a semiconductor wafer, while the substrate is rotated to perform etching or resist removal processes. In this substrate processing apparatus, the substrate being processed or the processing liquid on the substrate is heated by a heating unit, such as a heater, thereby increasing the temperature of the processing liquid and thus increasing the processing efficiency.

[0003] [Existing technical documents]

[0004] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2015-211201 Summary of the Invention

[0006] [The problem the invention aims to solve]

[0007] For example, a cover having a facing surface opposite to the substrate is provided between the held substrate and the heating section that heats the processing liquid, so as to cover the heating section. Since the substrate is processed with the processing liquid, droplets sometimes adhere to the facing surface of the cover.

[0008] When the heating element is heated by light irradiation, the light passes through the cover and irradiates the substrate, so the cover itself is sometimes not heated. If the cover is not heated, droplets adhering to the opposite surface of the cover will remain. These residual droplets may fall onto the substrate, raising concerns about contaminating the substrate.

[0009] The embodiments of the present invention are proposed to solve the problems described above, and the purpose is to provide a substrate processing apparatus and a substrate processing method that can suppress substrate contamination.

[0010] [Technical means to solve the problem]

[0011] The substrate processing apparatus according to an embodiment of the present invention includes: a rotation holding section for holding and rotating a substrate; a processing liquid supply section for supplying processing liquid to the substrate held and rotated by the rotation holding section; a heating section for heating the substrate by irradiating the substrate held by the rotation holding section with light; a cover having a facing surface facing the substrate held by the rotation holding section, disposed between the held substrate and the heating section, allowing the light irradiated by the heating section to pass through; and a control device for controlling the rotation holding section, the processing liquid supply section, and the heating section, wherein the control device controls the supply of processing liquid to the substrate rotating by the rotation holding section, thereby processing the substrate and performing a first drying process, wherein the first drying process is performed by heating the substrate held by the rotation holding section by irradiating it with light, thereby drying the facing surface of the cover.

[0012] The substrate processing method according to an embodiment of the present invention includes: a rotation step in which a substrate is held and rotated; a processing step in which a processing liquid is supplied to the rotating substrate to process the substrate; and a drying step in which a cover disposed between the held substrate and a heating unit is dried, wherein the heating unit heats the substrate by irradiating the held substrate with light, and the cover allows the light irradiated by the heating unit to pass through, and in the drying step, the heating unit irradiates the substrate with light to heat the substrate, thereby drying the opposing surface of the cover facing the held substrate.

[0013] [The effects of the invention]

[0014] Through the embodiments of the present invention, substrate contamination can be suppressed. Attached Figure Description

[0015] Figure 1 This is a partial axial cross-sectional view showing the loading and unloading of a substrate in the substrate processing apparatus of the embodiment.

[0016] Figure 2 It means Figure 1 A partial axial cross-sectional view of the substrate processing apparatus during the supply of processing liquid.

[0017] Figure 3 It means Figure 1 A partial axial cross-sectional view of the substrate processing apparatus during the supply of rinsing solution.

[0018] Figure 4 It means Figure 1 A partial axial cross-sectional view of the cover during cleaning in the substrate processing apparatus.

[0019] Figure 5 It means Figure 1A partial axial cross-sectional view of the substrate processing apparatus during the second drying process.

[0020] Figure 6 yes Figure 1 A block diagram of the control device for the substrate processing apparatus.

[0021] Figure 7 It means Figure 1 A partial axial cross-sectional view of the substrate processing apparatus during the first drying process.

[0022] Figure 8 This is a flowchart illustrating the etching process of the implementation method.

[0023] Figure 9 This is a flowchart illustrating the maintenance procedure for the cover in the implementation method.

[0024] Explanation of icon numbers

[0025] 1: Substrate processing device

[0026] 10: Rotary retaining part

[0027] 11: Rotating Platform

[0028] 11a: Cover

[0029] 12: Chuck pin

[0030] 13: Drive Unit

[0031] 20: Processing Fluid Supply Department

[0032] 21: First nozzle

[0033] 21a: Exhaust nozzle

[0034] 22: Processing fluid supply pipe

[0035] 23: Heater

[0036] 24: Valve

[0037] 25: Processing fluid supply source

[0038] 30: Rinse Fluid Supply Department

[0039] 31: Second nozzle

[0040] 31a: Spray outlet

[0041] 32: Rinse solution supply pipe

[0042] 33: Valve

[0043] 34: Rinse Fluid Supply Source

[0044] 40: Gas Supply Department

[0045] 41: Gas supply pipe

[0046] 42: Valve

[0047] 43: Gas supply source

[0048] 50: Liquid receiving part

[0049] 51: Cup section

[0050] 52: Contracting Department

[0051] 60: Heating section

[0052] 61: Light-emitting element

[0053] 62: Support section

[0054] 621: Top Slab

[0055] 621a, 621b: Through holes

[0056] 63: Cover

[0057] 631: Opposing planes

[0058] 63a, 63b: Through holes

[0059] 70: Lifting mechanism

[0060] 71: Arm

[0061] 72: Pillar

[0062] 80: Control device

[0063] 81: Mechanism Control Department

[0064] 82: Storage Department

[0065] 82a: Substrate processing information

[0066] 82b: Cover Cleaning and Processing Information

[0067] 82c: First drying process information

[0068] 82d: Information on the second drying process

[0069] 83: Judgment Department

[0070] d: droplet

[0071] Lc: Eluent

[0072] Lp: Processing fluid

[0073] P1: Move out / move in location

[0074] P2: Heating position

[0075] P3: Approaching position

[0076] P4: Rinse location

[0077] S: Space

[0078] S01, S02, S03, S04, S05, S06, S07, S08, S09, S10, S11, S12, S13, S14, S15, S16, S17, S18, S21, S22, S23, S24, S25, S26, S27, S28, S29, S30, S31, S32, S33, S34, S35, S36, S37: Steps

[0079] W, Wd, Wp: substrate Detailed Implementation

[0080] [Implementation Method]

[0081] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below. Furthermore, in the various drawings, for ease of understanding, thickness, dimensions, positional relationships, ratios, or shapes are sometimes emphasized; the present invention is not limited to these emphasis.

[0082] [summary]

[0083] In this embodiment, the substrates used include substrate Wp, which is the object to be processed using processing solution Lp, and substrate Wd, which is moved in during the maintenance process of the cover 63 described later. Substrate Wp is the substrate that becomes the product, and is an example of the first substrate. Substrate Wp, which becomes the product, is, for example, a disc-shaped silicon wafer on which a silicon nitride film and a silicon oxide film are formed on the surface to be processed. Substrate Wd is a dummy substrate, and is an example of the second substrate. Dummy substrate Wd is, for example, a disc-shaped silicon wafer with the same diameter as substrate Wp, but without any film formed. Hereinafter, substrate W will be described as substrate W without distinguishing between substrate Wp and substrate Wd.

[0084] like Figure 1 As shown, the substrate processing apparatus 1 rotates the substrate Wp held by the rotation holding unit 10 while supplying processing liquid Lp to the substrate Wp from the processing liquid supply unit 20, thereby processing the substrate Wp. Figure 2 As shown, the substrate processing apparatus 1 of this embodiment is a monolithic device that supplies an etching-capable processing liquid Lp to a rotating substrate Wp for etching processing. Furthermore, in this embodiment, as... Figure 3 As shown, before and after the supply of the processing liquid Lp, the substrate Wp is subjected to rinsing treatment by the rinsing liquid supply section 30, which supplies the rinsing liquid Lc.

[0085] The substrate processing apparatus 1 includes a heating section 60 having a light-emitting element 61. The light-emitting element 61 is a light-emitting diode (LED) that irradiates light of a wavelength absorbed by the substrate W to heat the substrate W itself. Additionally, the substrate processing apparatus 1 includes a cover 63 having a facing surface 631 facing the substrate W and covering the heating section 60. The cover 63 allows light emitted from the light-emitting element 61 to pass through without heating the substrate W by the light. The heating section 60 irradiates light from the light-emitting element 61 onto the substrate W through the cover 63, thereby heating the substrate W.

[0086] In this embodiment, the substrate processing apparatus 1 performs maintenance processing on the cover 63. This maintenance processing of the cover 63 involves removing droplets d containing processing liquid Lp or rinsing liquid Lc adhering to the opposing surfaces 631 of the cover 63 during etching and rinsing processes (see reference). Figure 5 , Figure 7 In the maintenance process of the cover 63, the facing surfaces 631 of the cover 63 are cleaned and dried. In the maintenance process of the cover 63, a dummy substrate Wd is used instead of the substrate Wp of the product.

[0087] The maintenance process for the cover 63 includes a cover cleaning process, a first drying process, and a second drying process. The cover cleaning process involves bringing the facing surface 631 into contact with the rinsing solution Lc supplied to the substrate Wd to rinse away the droplets d containing the processing solution Lp adhering to the facing surface 631 (see reference). Figure 4 The first drying process involves irradiating the substrate Wd with light by the light-emitting element 61 to heat the substrate Wd. The radiant heat generated from the heated substrate Wd then heats the droplets d adhering to the opposing surface 631 of the cover 63, thereby drying the opposing surface 631 (see reference). Figure 7 Furthermore, the heating of the droplet d includes the following: directly heating the droplet d attached to the facing surface 631 using radiant heat generated from the heated substrate Wd; heating the facing surface 631 using radiant heat generated from the heated substrate Wd, and then heating the droplet d using the heated facing surface 631. The second drying process involves supplying gas to the space S formed between the substrate Wd and the facing surface 631 of the cover 63, blowing the droplet d attached to the facing surface 631 of the cover 63 outwards, thereby drying the facing surface 631 (see [reference]). Figure 5 ).

[0088] Regarding the first and second drying processes, as long as the droplets d adhering to the facing surface 631 can be removed to the extent that they do not contaminate the substrate Wp, the droplets d can also adhere to the facing surface 631 after the maintenance process of the cover 63 is completed. Drying the facing surface 631 means reducing the number of droplets d adhering to the facing surface 631 compared to before the first and second drying processes.

[0089] In this embodiment, the treatment solution Lp is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). The concentration of phosphoric acid in the treatment solution Lp is, for example, 85 wt% to 94 wt%. The rinsing solution Lc is, for example, pure water (H2O).

[0090] [structure]

[0091] like Figure 1 As shown, the substrate processing apparatus 1 includes a rotating holding part 10, a processing liquid supply part 20, a rinsing liquid supply part 30, a gas supply part 40, a liquid receiving part 50, a heating part 60, a lifting mechanism 70, and a control device 80.

[0092] (Rotational retaining part)

[0093] The rotation holding part 10 holds the substrate W and rotates it. For example... Figure 1 As shown, the rotating holding part 10 includes a rotating platform 11, a chuck pin 12, and a drive part 13. The rotating platform 11 is a cylindrical component, with one end closed by a cover part 11a. The cover part 11a is a circular surface with a diameter larger than that of the substrate W, and is spaced apart and faces the holding substrate W.

[0094] The chuck pins 12 are retaining members that hold the substrate W in place on the cover 11a of the rotating platform 11 by spacing. Multiple chuck pins 12 protrude from the rotating platform 11 and are evenly spaced along positions corresponding to the outer periphery of the substrate W. Furthermore, the chuck pins 12 are movably positioned between a closed position (contacting the outer periphery of the substrate W to hold it) and an open position (moving away from the outer periphery of the substrate W to release it) via an opening and closing mechanism (not shown).

[0095] The drive unit 13 is a drive source (motor) that rotates the rotary platform 11. The drive unit 13 rotates the base plate W held by the chuck pin 12 by rotating the rotary platform 11.

[0096] (Processing Fluid Supply Department)

[0097] like Figure 2As shown, the processing liquid supply unit 20 supplies processing liquid Lp to the substrate Wp held and rotated by the rotating holding unit 10. The processing liquid supply unit 20 has a first nozzle 21, a processing liquid supply pipe 22, a heater 23, and a valve 24. The first nozzle 21 is inserted into the support 62 and the cover 63 of the heating unit 60 (described later), and the nozzle outlet 21a at the front end is positioned facing the center of the substrate W held by the rotating holding unit 10.

[0098] The first nozzle 21 is connected to a processing liquid supply source 25, such as a storage tank containing processing liquid Lp, via a processing liquid supply pipe 22. In this embodiment, the processing liquid Lp supplied from the processing liquid supply source 25 is preheated. A heater 23 is provided midway through the processing liquid supply pipe 22. After being heated by the heater 23 through the processing liquid supply pipe 22, the processing liquid Lp supplied from the processing liquid supply source 25 is ejected from the nozzle outlet 21a of the first nozzle 21 to the vicinity of the center of the substrate Wp.

[0099] The temperature of the treatment fluid Lp ejected from the first nozzle 21 is, for example, 160°C. Furthermore, a valve 24 is provided midway through the treatment fluid supply pipe 22. By opening and closing the valve 24, the ejection of the treatment fluid Lp from the first nozzle 21 is initiated and stopped. The valve 24 is electrically connected to the control device 80, which will be described later, and its opening and closing are controlled by the control device 80.

[0100] (Leaching Fluid Supply Department)

[0101] like Figure 3 As shown, the rinsing solution supply unit 30 supplies rinsing solution Lc to the substrate Wp held by the rotating holding unit 10. Additionally, as... Figure 4 As shown, the rinsing fluid supply unit 30 supplies rinsing fluid Lc to the substrate Wd held by the rotating holding unit 10. For example, pure water can be used as the rinsing fluid Lc. The rinsing fluid supply unit 30 includes a second nozzle 31, a rinsing fluid supply pipe 32, and a valve 33. The second nozzle 31 is inserted into the support portion 62 and the cover 63 of the heating unit 60 (described later), and its front nozzle outlet 31a is positioned facing the vicinity of the center of the substrates Wp and Wd held by the rotating holding unit 10.

[0102] The second nozzle 31 is connected to a rinsing liquid supply source 34, such as a storage tank containing rinsing liquid Lc, via a rinsing liquid supply pipe 32. The rinsing liquid Lc supplied from the rinsing liquid supply source 34 is ejected from the nozzle outlet 31a of the second nozzle 31 through the rinsing liquid supply pipe 32 to the vicinity of the center of substrates Wp and Wd. A valve 33 is provided midway through the rinsing liquid supply pipe 32. The ejection of rinsing liquid Lc from the second nozzle 31 is initiated and stopped by opening and closing the valve 33. The valve 33 is electrically connected to a control device 80 (described later) and its opening and closing are controlled by the control device 80.

[0103] (Gas Supply Department)

[0104] like Figure 5 As shown, the gas supply unit 40 supplies gas to the space S formed between the substrate Wd held by the rotating holding unit 10 and the facing surfaces 631 of the cover 63. Nitrogen gas can be used as an example of the gas. The gas supply unit 40 includes a gas supply pipe 41 and a valve 42. Furthermore, in Figure 5 For ease of explanation, the distance between the facing surface 631 of the cover 63 and the dummy substrate Wd is represented as large, but the separation distance between the facing surface 631 of the cover 63 and the substrate Wd is... Figure 4 same.

[0105] One end of the gas supply pipe 41 is connected to the rinsing liquid supply pipe 32 of the rinsing liquid supply unit 30, and the gas supply pipe 41 is in communication with the rinsing liquid supply pipe 32. That is, the gas through the gas supply pipe 41 is supplied to the space S through the rinsing liquid supply pipe 32 from the second nozzle 31. That is, the second nozzle 31 is also part of the gas supply unit 40. The gas supplied to the space S from the second nozzle 31 blows the droplets d adhering to the opposing surface 631 of the cover 63 toward the cup portion 51, thereby removing the droplets d.

[0106] The other end of the gas supply pipe 41 is connected to the gas supply source 43. A valve 42 is installed midway through the gas supply pipe 41. Gas supply is started and stopped by opening and closing the valve 42. The valve 42 is electrically connected to the control device 80 (described later) and is controlled by the control device 80 to open and close.

[0107] (Liquid receiving part)

[0108] The liquid receiving section 50 is provided to surround the rotating holding section 10, and receives the processing liquid Lp and rinsing liquid Lc that are scattered from the rotating substrate W. Additionally, during the second drying process described later, the liquid receiving section 50 receives droplets d adhering to the opposing surfaces 631 of the cover 63. The liquid receiving section 50 discharges the received processing liquid Lp, rinsing liquid Lc, and droplets d outside the substrate processing apparatus 1.

[0109] The liquid receiving part 50 has a cup part 51 and a receiving part 52. The cup part 51 is a curved cylindrical body that covers the periphery of the rotating holding part 10 at intervals and narrows in diameter at the upper part. The cup part 51 is lowered and in a standby position (see reference) via a lifting mechanism (not shown) so that substrates Wp and Wd can be moved out / in. Figure 1 The processing position that rises to receive the processing liquid Lp, rinsing liquid Lc, and droplets d scattered from the substrate W (refer to the processing position). Figures 2-5 The receiving part 52 is a ring-shaped container located below the cup part 51 and open at the top.

[0110] The processing liquid Lp and rinsing liquid Lc that scatter from the substrate W are caught by the cup portion 51 and fall downwards along the inner wall of the cup portion 51, thus flowing into the receiving portion 52. Additionally, during the second drying process, droplets d adhering to the opposing surface 631 are scattered outwards by the gas supplied to the space S. The scattered droplets d are caught by the cup portion 51 and fall downwards along the inner wall of the cup portion 51, thus flowing into the receiving portion 52. The processing liquid Lp, rinsing liquid Lc, and droplets d that flow into the receiving portion 52 are discharged from the substrate processing apparatus 1 outside through a discharge port (not shown) formed on the bottom surface of the receiving portion 52.

[0111] (Heating section)

[0112] The heating unit 60 irradiates the substrate W, held by the rotating holding unit 10, with light from the light-emitting element 61, thereby heating the substrate W. By heating the substrate Wp, the heating unit 60 can heat the processing liquid Lp on the substrate Wp through thermal conduction, thus maintaining the processing liquid Lp on the substrate Wp at a high temperature. Furthermore, the output of the heating unit 60 can be controlled to not only maintain the temperature of the processing liquid Lp but also further raise the temperature of the substrate Wp.

[0113] The heating unit 60 has multiple light-emitting elements 61 that irradiate light onto the held substrate W. Each light-emitting element 61 emits light (electromagnetic waves) of a wavelength that is absorbed by the substrate W and thus heats the substrate W. Furthermore, the light emitted by the light-emitting element 61 is light of a wavelength that is transmitted through the processing liquid Lp. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to a degree sufficient to heat the substrate W; this includes not only complete absorption by the substrate W, but also cases where a portion of the light is reflected or transmitted through the substrate W. Similarly, "transmitted through the processing liquid Lp" means that the light incident on the processing liquid Lp is transmitted through the processing liquid Lp to a degree sufficient to heat the substrate Wp, and also cases where a portion of the light is absorbed or reflected by the processing liquid Lp.

[0114] As the light-emitting element 61, an LED that emits light for heating is used, for example. The wavelength of the light emitted by the LED is, for example, 350 nm to 1060 nm (350 nm or more and 1060 nm or less). More preferably, the center wavelength is 395 nm to 940 nm (395 nm or more and 940 nm or less). In this embodiment, an LED with a center wavelength of 395 nm is used. Furthermore, the output of the light-emitting element 61 is controlled by the control device 80 described later.

[0115] Therefore, even if light from the light-emitting element 61 is shone from above the processing liquid Lp supplied to the substrate Wp, which is above the space above the substrate Wp, the light can be absorbed by the processing liquid Lp on the substrate Wp, thereby heating the substrate Wp. Then, through heat conduction from the substrate Wp, the temperature of the processing liquid Lp rises, thereby increasing the etching rate (processing rate).

[0116] In addition to the light-emitting elements 61, the heating unit 60 also has a support unit 62. The support unit 62 is a member that supports the plurality of light-emitting elements 61. The support unit 62 is a cylindrical member whose upper end is closed by a top plate 621. The diameter of the support unit 62 is the same as or larger than the diameter of the substrate W. The support unit 62 is disposed above the rotating platform 11 at a distance from the cover 11a. Thus, the heating unit 60 is configured to irradiate light from the light-emitting elements 61 from above the space where the substrate W is held by the rotating holding part 10. In addition, two through holes 621a and 621b are provided near the center of the top plate 621 of the support unit 62.

[0117] The substrate processing apparatus 1 also includes a cover 63. The cover 63 is disposed between the substrate W held by the rotating holding part 10 and the heating part 60, covering the light-emitting element 61. The heating part 60 irradiates light onto the held substrate W via the cover 63. The cover 63 is a circular plate-shaped member covering the end of the support part 62 facing the rotating platform 11. That is, the cover 63 is disposed on the end of the support part 62 opposite to the end where the top plate 621 is provided. The cover 63 is formed of a material that is resistant to the processing liquid Lp and allows light emitted from the light-emitting element 61 to pass through. That is, the cover 63 is not directly heated even when light is emitted from the light-emitting element 61. The cover 63 is, for example, formed of quartz. Furthermore, two through holes 63a and 63b are formed near the center of the cover 63.

[0118] like Figure 1 As shown, the first nozzle 21 protrudes from the cover 63 at its front end outlet 21a and is inserted into the through holes 621a and 63a, facing the substrate W. The second nozzle 31 protrudes from the cover 63 at its front end outlet 31a and is inserted into the through holes 621b and 63b, facing the substrate W. The cover 63 has an facing surface 631 facing the substrate W held by the rotation holding part 10.

[0119] In the support portion 62, a plurality of light-emitting elements 61 are mounted facing the rotating platform 11, clamping the cover 63. The heating portion 60 has multiple regions for arranging the light-emitting elements 61. That is, the plurality of light-emitting elements 61 are arranged in multiple regions. In this embodiment, the light-emitting elements 61 are provided in regions corresponding to different positions in the radial direction of the substrate W, and the output of the light-emitting elements 61 can be controlled according to each region. In addition, the plurality of light-emitting elements 61 are arranged so that they can illuminate the entire surface of the substrate W to be processed.

[0120] (Lifting mechanism)

[0121] like Figure 1 As shown, the lifting mechanism 70 supports the heating unit 60, causing the facing surfaces 631 of the cover 63 to move closer to or further away from the substrates Wp and Wd. By raising and lowering the heating unit 60, the lifting mechanism 70 can raise and lower the cover 63 of the heating unit 60, which is mounted on the support 62. The lifting mechanism 70 has an arm 71 and a support column 72. The arm 71 is a member extending in a direction parallel to the substrate W, and one end is connected to the outer periphery of the support 62. The arm 71 supports the heating unit 60 by supporting the support 62. The support column 72 extends in a direction orthogonal to the substrate W and is erected, supporting the other end of the arm 71. A drive source, such as a ball screw mechanism or a cylinder (not shown), is provided on the support column 72. By raising and lowering the arm 71 using the drive source, the heating unit 60 can be raised and lowered.

[0122] The lifting mechanism 70 positions the opposing surface 631 of the cover 63 at any height among the following positions: the moving / moving position P1, the heating position P2, the approach position P3, and the rinsing position P4, by raising and lowering the heating unit 60. The positions are as follows.

[0123] Move-out / Move-in Position P1: When moving out / into substrates Wp and Wd, the height position is separated upwards from the rotating platform 11 to allow the hand of the transfer robot to be inserted (see reference). Figure 1 ).

[0124] Heating position P2: This is a position closer to the height of substrate Wp and substrate Wd than the moving-out / moving-in position P1, and where the light-emitting element 61 will not be damaged by the radiant heat generated when heating substrate Wp and substrate Wd (see reference). Figure 2 , Figure 7 The facing surface 631 of the cover 63 is not in contact with the processing liquid Lp on the substrate Wp.

[0125] Approach position P3: A position closer to substrates Wp and Wd than heating position P2, where the facing surface 631 of the cover 63 can contact the rinsing liquid Lc on substrates Wp and Wd (refer to...). Figure 4 , Figure 5 )

[0126] Rinse position P4: The height position between the move-out / move-in position P1 and the heating position P2, and the position when the rinsing solution Lc is supplied to the substrate Wp (refer to...). Figure 3 ).

[0127] Furthermore, the separation distance between the substrate W held by the rotating holding part 10 and the facing surface 631 of the cover 63 positioned at the transfer / in position P1 is an example of a first distance. Additionally, the separation distance between the substrate W held by the rotating holding part 10 and the facing surface 631 of the cover 63 positioned at the heating position P2 is an example of a second distance. Furthermore, the separation distance between the substrate W held by the rotating holding part 10 and the facing surface 631 of the cover 63 positioned at the approach position P3 is an example of a third distance. And the separation distance between the substrate W held by the rotating holding part 10 and the facing surface 631 of the cover 63 positioned at the rinsing position P4 is an example of a fourth distance.

[0128] (Control device)

[0129] The control device 80 controls each part of the substrate processing apparatus 1. To realize the various functions of the substrate processing apparatus 1, the control device 80 includes a processor for executing programs, a memory for storing various information such as programs and operating conditions, and drive circuits for driving each component. Specifically, the control device 80 controls the rotary holding unit 10, the processing liquid supply unit 20, the rinsing liquid supply unit 30, the gas supply unit 40, the liquid receiving unit 50, the heating unit 60, the lifting mechanism 70, etc.

[0130] More specifically, such as Figure 6 As shown, the control device 80 includes a mechanism control unit 81, a storage unit 82, and a determination unit 83. The mechanism control unit 81 controls the operation of the opening and closing mechanism of the rotary holding unit 10, the drive unit 13, the heater 23 of the processing liquid supply unit 20, the valve 24, the valve 33 of the rinsing liquid supply unit 30, the valve 42 of the gas supply unit 40, the lifting mechanism of the liquid receiving unit 50, the light-emitting element 61 of the heating unit 60, and the drive source of the lifting mechanism 70, etc., according to the program stored in the storage unit 82.

[0131] The storage unit 82 stores programs, data, and other information used to implement the actions of each structure that becomes the control object of the mechanism control unit 81. The storage unit 82 stores substrate processing information 82a, cover cleaning processing information 82b, first drying processing information 82c, and second drying processing information 82d. The substrate processing information 82a, cover cleaning processing information 82b, first drying processing information 82c, and second drying processing information 82d are action information of the control object of the mechanism control unit 81 in each process performed by the substrate processing apparatus 1.

[0132] Substrate processing information 82a is information for processing substrate Wp. Cover cleaning processing information 82b is information for cleaning the facing surface 631 of cover 63. First drying processing information 82c is information for drying the facing surface 631 of cover 63 by heating substrate Wd. Second drying processing information 82d is information for supplying gas to the space S between substrate Wd and the facing surface 631 of cover 63 to dry the facing surface 631 of cover 63.

[0133] In addition, the storage unit 82 also stores a predetermined number of substrates Wp to be processed before the maintenance process of the cover 63, and the number of processed substrates Wp counted by the determination unit 83. The maintenance process of the cover 63 is a process of cleaning and drying the facing surface 631 of the cover 63. In this embodiment, the maintenance process of the cover 63 includes a cover cleaning process, a first drying process, and a second drying process.

[0134] The determination unit 83 counts the number of substrates Wp processed by the substrate processing apparatus 1. Furthermore, the determination unit 83 determines whether the number of processed substrates Wp has reached a predetermined number.

[0135] When the determination unit 83 determines that the number of processed substrates Wp has reached a predetermined number, maintenance processing of the cover 63 is performed. That is, the maintenance processing of the cover 63 is not performed after each substrate Wp has been processed, but after the predetermined number of substrates has been processed. In the maintenance processing of the cover 63 in this embodiment, a dummy substrate Wd is used instead of the substrate Wp that becomes the product.

[0136] If the determination unit 83 determines that the number of processed substrates Wp has reached the predetermined number, the maintenance process of the cover 63 begins, and the determination unit 83 resets the count of substrates Wp. Then, after the maintenance process of the cover 63 ends, if a new substrate Wp has been processed, the determination unit 83 starts counting from the processed substrate Wp as the first one.

[0137] [action]

[0138] Next, in addition to referring to the above Figures 1 to 7 In addition, refer to Figure 8 and Figure 9 The flowchart below explains the operation of the substrate processing apparatus 1 of this embodiment, which is controlled by the control device 80. First, referring to... Figure 8 The flowchart illustrates the processing of substrate Wp based on substrate processing information 82a.

[0139] like Figure 1As shown, the heating unit 60 is pre-positioned with the opposing surface 631 of the cover 63 in the out / in position P1, and the cup part 51 is positioned in the standby position. The valve 24 of the processing liquid supply unit 20, the valve 33 of the rinsing liquid supply unit 30, and the valve 42 of the gas supply unit 40 are closed.

[0140] In this state, the chuck pin 12 is in the open position. After the substrate Wp, mounted on the hand of the transfer robot, is moved between the heating unit 60 and the rotating platform 11, the chuck pin 12 is in the closed position, thereby supporting the outer periphery of the substrate Wp. Thus, the substrate Wp is held on the cover 11a of the rotating platform 11, spaced apart from the cover 11a (step S01). At this time, the substrate Wp is positioned so that its center aligns with the rotation axis of the rotating platform 11. Subsequently, the cup 51 rises and is positioned in the processing position (step S02).

[0141] Then, as Figure 3 As shown, the substrate Wp held by the chuck pin 12 starts to rotate as the rotating platform 11 rotates, and the heating part 60 descends to position the facing surface 631 of the cover 63 at the rinsing position P4 (step S03).

[0142] Then, the rinsing process begins. Specifically, the valve 33 of the rinsing solution supply unit 30 is opened, and rinsing solution Lc is sprayed from the second nozzle 31 near the center of the substrate Wp (step S04). When rinsing solution Lc is supplied to the rotating substrate Wp, the rinsing solution Lc moves sequentially toward the outer periphery of the substrate Wp and expands to the entire surface of the substrate Wp to be processed.

[0143] If this rinsing solution Lc is not supplied, when the processing solution Lp is supplied, the surface tension will prevent the processing solution Lp from wetting and spreading to the entire surface of the substrate Wp to be processed, resulting in uneven processing. In this embodiment, in order to prevent such uneven processing, the rinsing solution Lc is supplied before the processing solution Lp is supplied, before a predetermined time has elapsed (step S05 No). When the predetermined rinsing time has elapsed (step S05 Yes), the valve 33 of the rinsing solution supply unit 30 is closed, and the spraying of the rinsing solution Lc from the second nozzle 31 stops (step S06).

[0144] Next, as Figure 2As shown, the heating unit 60 descends, and the opposing surface 631 of the cover 63 is positioned at the heating position P2 (step S07). Then, the valve 24 of the processing liquid supply unit 20 opens, and processing liquid Lp is sprayed from the first nozzle 21 near the center of the substrate Wp (step S08). When processing liquid Lp is supplied to the rotating substrate Wp, the processing liquid Lp moves sequentially toward the outer periphery of the substrate Wp and expands to the entire surface of the substrate Wp to be processed. Since rinsing liquid Lc is pre-supplied to the surface of the substrate Wp to be processed, the processing liquid Lp wets and expands to the entire surface of the substrate Wp to be processed, thereby preventing uneven processing.

[0145] Simultaneously with the ejection of the processing liquid Lp, heating of the substrate Wp begins by irradiation with light from the light-emitting element 61. Before the predetermined processing time has elapsed, heating of the substrate Wp continues, and etching is performed (step S09, no). During the etching process, the processing liquid Lp spreads and sometimes adheres to the opposing surface 631 of the cover 63 in the form of droplets d.

[0146] After the prescribed processing time has elapsed (step S09), the valve 24 of the processing liquid supply unit 20 closes, stopping the ejection of processing liquid Lp from the first nozzle 21 (step S10). At the same time, the irradiation of light from the light-emitting element 61 is stopped.

[0147] like Figure 3 As shown, the heating unit 60 rises, and the opposing surface 631 of the cover 63 is positioned at the rinsing position P4 (step S11). Then, the valve 33 of the rinsing liquid supply unit 30 opens, and rinsing liquid Lc is sprayed from the second nozzle 31 near the center of the substrate Wp (step S12). When rinsing liquid Lc is supplied to the rotating substrate Wp, the rinsing liquid Lc moves sequentially towards the outer periphery of the substrate Wp and expands to the entire treated surface of the substrate Wp. The rinsing liquid supply unit 30 supplies rinsing liquid Lc before a predetermined time has elapsed (step S13 No).

[0148] When the rinsing solution Lc is supplied to the phosphoric acid solution Lp, a large amount of water vapor is generated. At this time, since the facing surface 631 of the cover 63 is located further away from the substrate Wp than the heating position P2, i.e., the rinsing position P4, the adhesion of water vapor to the facing surface 631 of the cover 63 can be suppressed. In addition, since the rinsing position P4 is closer to the substrate Wp than the removal / removal position P1, liquid splashing caused by the supply of rinsing solution Lc can be suppressed.

[0149] When the prescribed rinsing time has elapsed (step S13 Yes), the valve 33 of the rinsing liquid supply unit 30 closes, and the spraying of rinsing liquid Lc from the second nozzle 31 stops (step S14). The rotation of the rotating platform 11 stops, and the substrate Wp held by the chuck pin 12 stops rotating (step S15).

[0150] like Figure 1 As shown, the heating unit 60 rises, and the facing surface 631 of the cover 63 is positioned at the transfer / in position P1. Subsequently, the cup part 51 descends and is positioned in the standby position. In this state, the hand of the transfer robot is inserted under the substrate Wp, and the chuck pin 12 is in the open position, thereby placing the substrate Wp on the hand of the transfer robot and transferring it to the outside of the substrate processing device 1 (step S16).

[0151] The determination unit 83 counts the number of processed substrates Wp. When a substrate Wp is removed, the determination unit 83 counts the removed substrates Wp as processed substrates Wp and determines whether the number of processed substrates Wp has reached a predetermined number. If the number of processed substrates Wp has not reached the predetermined number (step S17 No), the maintenance process of the cover 63 described later is not performed, and the process ends. Subsequently, when processing the next substrate Wp, the process from step S01 is executed again. On the other hand, if the number of processed substrates Wp has reached the predetermined number (step S17 Yes), the maintenance process of the cover 63 is performed (step S18). Then, after the maintenance process of the cover 63 is performed, the process performed by the substrate processing apparatus 1 ends.

[0152] Next, refer to Figure 9 The flowchart below details the maintenance process (step S18) for the cover 63. In the substrate processing apparatus 1, the maintenance process for the cover 63 includes cover cleaning, a first drying process, and a second drying process. The cover cleaning process is performed based on cover cleaning information 82b, the first drying process is performed based on first drying information 82c, and the second drying process is performed based on second drying information 82d. As described above, the maintenance process for the cover 63 is performed whenever the number of processed substrates Wp reaches a predetermined number.

[0153] At the start of the maintenance process for the cover 63, the facing surfaces 631 of the cover 63 are positioned in the move-out / move-in position P1 (step S21). Additionally, the cup portion 51 is positioned in the standby position. During the maintenance process for the cover 63, a dummy substrate Wd, different from the substrate Wp that becomes the product, is used. Therefore, the substrate Wd, mounted on the hand of the transfer robot, is moved in and held by the chuck pin 12 (step S22).

[0154] As the rotating platform 11 rotates, the substrate Wd held by the chuck pin 12 begins to rotate (step S23). At this time, the cup portion 51 rises and is positioned in the processing position.

[0155] When the substrate Wd is held and begins to rotate, the shroud cleaning process begins. Specifically, the heating unit 60 descends, and the facing surface 631 of the shroud 63 is positioned at a proximity position P3 (step S24). Furthermore, the rotation of the substrate Wd can begin after the facing surface 631 of the shroud 63 is positioned at the proximity position P3, or it can begin midway through the movement of the heating unit 60. Then, the valve 33 of the rinsing liquid supply unit 30 opens, and rinsing liquid Lc is sprayed from the second nozzle 31 near the center of the substrate Wd (step S25). When rinsing liquid Lc is supplied to the rotating substrate Wd, the rinsing liquid Lc moves sequentially towards the outer periphery of the substrate Wd and expands to the entire treated surface of the substrate Wd, forming a liquid film of rinsing liquid Lc. Since the facing surface 631 of the shroud 63 is at the proximity position P3, therefore... Figure 4 As shown, the liquid film of the rinsing liquid Lc on the substrate Wd comes into contact with the liquid film. As a result, the droplets d containing the processing liquid Lp adhering to the facing surface 631 are rinsed together with the rinsing liquid Lc, thereby cleaning the facing surface 631 of the cover 63.

[0156] Before the specified time has elapsed, the rinsing fluid Lc is supplied (step S26 No). When the specified time has elapsed (step S26 Yes), the valve 33 of the rinsing fluid supply unit 30 is closed, and the spraying of the rinsing fluid Lc from the second nozzle 31 stops (step S27). Thus, the hood cleaning process is completed.

[0157] Next, the process proceeds to the first and second drying processes. Firstly, as... Figure 7 As shown, the heating unit 60 rises, and the facing surface 631 of the cover 63 is positioned at the heating position P2 (step S28). Then, heating of the substrate Wd begins, and gas supply begins (step S29). That is, the first drying process and the second drying process begin simultaneously. Specifically, as the first drying process, light is irradiated onto the substrate Wd from the light-emitting element 61 of the heating unit 60, thereby heating the substrate Wd. The facing surface 631 of the cover 63 is heated by radiant heat from the heated substrate Wd. Therefore, the droplets d adhering to the facing surface 631 of the cover 63 are heated, removed from the facing surface 631, or reduced in size.

[0158] Additionally, as a second drying process, gas is supplied to the space S between the opposing surfaces 631 of the cover 63 and the substrate Wd. Simultaneously with the start of light irradiation from the light-emitting element 61, the valve 42 of the gas supply unit 40 is opened, and gas is supplied from the second nozzle 31 to the space S between the opposing surfaces 631 of the cover 63 and the substrate Wd. This gas blows away the droplets d adhering to the opposing surfaces 631 of the cover 63, thereby drying the opposing surfaces 631. Furthermore, since the outlet 31a of the second nozzle 31 faces the vicinity of the center of the rotating substrate Wd, the gas supplied to the space S flows from the center toward the outside where the cup portion 51 is located. Therefore, the gas blows the droplets d toward the cup portion 51.

[0159] Here, the heating of the substrate Wd and the gas supply begin simultaneously, so the first drying process and the second drying process are performed in parallel for at least a portion of the time. By performing the first and second drying processes in parallel, the gas in the space S is also heated by the radiant heat from the substrate Wd, and the droplets d attached to the facing surface 631 are heated by the heated gas. Therefore, the heating of the droplets d attached to the facing surface 631 is promoted, thereby shortening the drying time of the facing surface 631 of the cover 63.

[0160] Heating is performed using the heating unit 60 before the predetermined time has elapsed (step S30 No). When the predetermined time has elapsed (step S30 Yes), irradiation using the light-emitting element 61 is stopped, and heating of the substrate Wd is stopped (step S31).

[0161] The first drying process is completed in the manner described. Furthermore, the gas supply does not cease during the heating shutdown phase. That is, the second drying process continues even after the first drying process has ended. At the end of the first drying process, the droplets d adhering to the opposing surfaces 631 of the enclosure 63 are smaller than before the start of the first drying process. Alternatively, the droplets d adhering to the opposing surfaces 631 of the enclosure 63 are removed by heating and gas supply.

[0162] When heating of substrate Wd is stopped, such as Figure 5As shown, the heating unit 60 descends via the lifting mechanism 70, and the facing surface 631 of the cover 63 is positioned at a near position P3 (step S32). That is, compared to when the substrate Wd is heated, the space S between the facing surface 631 of the cover 63 and the substrate Wd becomes narrower. Therefore, the flow rate of the gas ejected from the second nozzle 31 into the space S and towards the outside is increased compared to the case when it is positioned at the heating position P2. Therefore, it is easier to blow away the droplets d attached to the facing surface 631. In addition, the droplets d become smaller due to the heating during the first drying process. Therefore, the droplets d attached to the facing surface 631 are easily blown away. By supplying a high-velocity gas to the facing surface 631 of the cover 63, which is covered with droplets d that have become smaller by the first drying process, the droplets d can be removed efficiently. The droplets d blown away from the facing surface 631 are received by the cup portion 51.

[0163] Gas is supplied before the predetermined time has elapsed (step S33 No). When the predetermined time has elapsed after the gas supply begins (step S33 Yes), valve 42 of the gas supply unit 40 is closed, and the gas supply is stopped (step S34). The second drying process ends in this manner. Furthermore, in this embodiment, the time from the start of gas supply to its stop is longer than the time from the start of heating the substrate Wd to its stop. Therefore, after performing the first and second drying processes in parallel, only the second drying process is performed.

[0164] When the second drying process is completed, the rotating platform 11 stops rotating, thereby stopping the rotation of the substrate Wd (step S35). Then, the cup portion 51 descends and is positioned in the standby position. Next, the heating unit 60 rises, and the facing surface 631 of the cover 63 is positioned at the transfer / in position P1 (step S36). Furthermore, the rotation of the substrate Wd can be stopped after moving to the transfer / in position P1, or it can be done midway from the approach position P3 towards the transfer / in position P1. The heating unit 60 is moved, and with the facing surface 631 of the cover 63 positioned at the transfer / in position P1 and the cup portion 51 positioned in the standby position, the hand of the transfer robot is inserted under the substrate Wd, and the chuck pin 12 is in the open position, thereby placing the substrate Wp on the hand of the transfer robot and moving it outside the substrate processing apparatus 1 (step S37).

[0165] [Effect]

[0166] (1) The substrate processing apparatus 1 of this embodiment includes: a rotation holding section 10 for holding and rotating a substrate W; a processing liquid supply section 20 for supplying processing liquid Lp to the substrate Wp held and rotated by the rotation holding section 10; a heating section 60 for heating the substrate Wp and substrate Wd held by the rotation holding section 10 by irradiating them with light; and a cover 63 having a facing surface 631 facing the substrate Wp and substrate Wd held by the rotation holding section 10, and being disposed on the held substrate Wp and substrate Wd. Between d and the heating part 60, light irradiated by the heating part 60 is transmitted; and the control device 80 controls the rotating holding part 10, the processing liquid supply part 20 and the heating part 60. The control device 80 controls the supply of processing liquid Lp to the substrate Wp that is rotating through the rotating holding part 10, thereby processing the substrate Wp and performing a first drying process. The first drying process is to heat the substrate Wd by irradiating it with light, thereby drying the opposing surface 631 of the cover 63.

[0167] Furthermore, the substrate processing method of this embodiment includes: a rotation step, in which substrates Wp and Wd are held and rotated; a processing step, in which processing liquid Lp is supplied to the rotating substrate Wp to process the substrate Wp; and a drying step, in which a cover 63 disposed between the held substrate Wd and the heating unit 60 is dried, wherein the heating unit 60 heats the held substrate Wd by irradiating it with light, and the cover 63 allows the light irradiated by the heating unit 60 to pass through. In the drying step, the heating unit 60 irradiates the substrate Wd with light to heat the substrate Wd, thereby drying the facing surface 631 of the cover 63 facing the held substrate Wd.

[0168] As a comparative example of processing a substrate by heating, when the substrate is processed by heating the processing liquid on the substrate through a heating unit covered by a cover and having a heater, even if droplets are attached to the opposite side of the cover during substrate processing, the cover itself will also be heated to a high temperature, so the droplets will evaporate and be removed after the substrate processing is completed.

[0169] On the other hand, in this embodiment, the heating unit 60 has a light-emitting element 61, which heats the substrate Wp using light for processing. Since the light emitted from the light-emitting element 61 passes through the cover 63, the cover 63 is not heated when the substrate Wp is heated by the irradiated light, and the cover 63 does not become hot. Therefore, during the processing of the substrate Wp, the droplets d adhering to the opposing surface 631 of the cover 63 are not removed and remain. Therefore, independent of the processing of the substrate Wp, as a maintenance process for the cover 63, a first drying process is performed using the substrate Wd. In the first drying process, the substrate Wd is heated, and the opposing surface 631 of the cover 63 is heated using the radiant heat from the heated substrate Wd. As a result, the droplets d adhering to the opposing surface 631 of the cover 63 can be heated and removed. Therefore, during the processing of the substrate Wp, it is possible to prevent the droplets d adhering to the opposing surface 631 of the cover 63 from falling onto the substrate Wp and causing contamination of the substrate Wp.

[0170] (2) The control device 80 controls the supply of processing liquid Lp to the first substrate (substrate Wp) of the substrate W (substrate Wp, substrate Wd) held by the rotating holding part 10, thereby processing the first substrate and performing a first drying process. The first drying process involves irradiating the second substrate (substrate Wd) of the substrate (substrate Wp, substrate Wd) held by the rotating holding part 10 with light to heat it, thereby drying the opposing surface 631 of the cover 63.

[0171] (3) The first substrate (substrate Wp) is the substrate that becomes the product, and the second substrate (substrate Wd) is a fictitious substrate.

[0172] Since the first drying process is performed using a substrate Wd that is different from the substrate Wp treated with the processing liquid Lp, the facing surface 631 of the cover 63 can be dried without contaminating the substrate Wp, which is the object to be treated with the processing liquid Lp.

[0173] (4) It also includes a lifting mechanism 70, which moves the cover 63 to change the distance between the substrate W held by the rotating holding part 10 and the facing surface 631 of the cover 63. The control device 80 controls the first drying process to be performed when the distance between the substrate Wd held by the rotating holding part 10 and the facing surface 631 of the cover 63 is shorter than the distance when the substrate Wd is moved in, i.e., the first distance.

[0174] Therefore, the first drying process can be performed when the substrate Wd is close to the cover 63, thereby efficiently transferring the radiative heat from the substrate Wd to the facing surface 631 of the cover 63. Thus, droplets d adhering to the facing surface 631 of the cover 63 can be efficiently removed.

[0175] (5) It also includes: a rinsing liquid supply unit 30, which supplies rinsing liquid to the substrate Wd; and a lifting mechanism 70, which moves the cover 63 to change the distance between the substrate W held by the rotating holding unit 10 and the facing surface 631 of the cover 63. The control device 80 controls the cover cleaning process, wherein the cover cleaning process involves moving the cover 63 so that the facing surface 631 of the cover 63 comes into contact with the rinsing liquid Lc supplied to the substrate Wd by the rinsing liquid supply unit 30, thereby cleaning the facing surface 631 of the cover 63. The cover cleaning process is performed before the first drying process.

[0176] Thus, during the maintenance of the cover 63, by performing a cover cleaning process before the first drying process, the droplets d adhering to the facing surfaces 631 of the cover 63 can be rinsed off using the rinsing liquid Lc. Therefore, after rinsing off the treatment liquid Lp or particles contained in the droplets d, the facing surfaces 631 of the cover 63 can be dried, thereby keeping the facing surfaces 631 of the cover 63 clean.

[0177] (6) It also includes a gas supply unit 40, which supplies gas to the space S formed between the substrate Wd and the facing surface 631 of the cover 63, and the control device 80 controls it to perform a second drying process, which dries the facing surface 631 by supplying gas to the space S formed between the substrate Wd and the facing surface 631.

[0178] By using the gas supplied to space S, the droplets d adhering to the opposing surfaces 631 of the enclosure 63 can be blown outward, thereby removing the droplets d from the opposing surfaces 631. That is, not only is the heating drying in the first drying process performed, but also the gas-supply-based drying in the second drying process is performed, thus the removal of droplets d can be carried out efficiently.

[0179] (7) The second drying process begins simultaneously with or after the first drying process. Through the heat-based drying of the first drying process, the droplets d become smaller and easier to blow away. Therefore, by performing the second drying process on the droplets d that are undergoing or have undergone the heat-based drying of the first drying process, the droplets d can be blown away toward the cup 51 in a short time, thereby improving the processing efficiency.

[0180] (8) It also includes a gas supply unit 40, which supplies gas to the space S formed between the substrate Wd and the opposing surface 631 of the cover 63. The control device 80 controls the second drying process to be performed when the distance between the substrate W held by the rotation holding unit 10 and the opposing surface 631 of the cover 63 is a third distance shorter than the second distance. The second drying process is to supply gas to the space S formed between the substrate Wd and the opposing surface 631, thereby drying the opposing surface 631.

[0181] Thus, by performing the second drying process when the substrate W is closer to the facing surface 631 of the cover 63 during heating, the flow rate of the supplied gas increases, and therefore the force that blows away the droplets d increases, so that the droplets d attached to the facing surface 631 of the cover 63 can be efficiently blown away and removed from the cup portion 51.

[0182] Furthermore, by performing the first drying process at the second distance, damage to the light-emitting element 61 and the like can be suppressed. In the first drying process, the light-emitting element 61 and peripheral components such as the support portion 62 are also heated by radiant heat from the heated substrate Wd. If the radiant heat is large, there is a concern that these light-emitting elements 61 and the like may be damaged. Therefore, the first drying process is preferably performed at a second distance, where the distance between the substrate Wd held by the rotating holding portion 10 and the facing surfaces 631 of the cover 63 is longer than the third distance.

[0183] (9) The first drying process and the second drying process are carried out in parallel for at least a portion of the time.

[0184] Therefore, during the parallel execution of the first and second drying processes, the gas supplied to the space S is heated by the radiant heat of the heated substrate Wd. Thus, by utilizing the heated gas, the heating of the droplets d attached to the facing surface 631 can be promoted, thereby shortening the drying time of the facing surface 631.

[0185] [Variation Example]

[0186] (1) In the described embodiment, the lifting mechanism 70 raises and lowers the heating unit 60, but it is not limited to this as long as the distance between the substrate W and the facing surfaces 631 of the cover 63 can be changed. For example, the lifting mechanism 70 can also raise and lower the substrate W by raising and lowering the rotating platform 11 while the chuck pin 12 holds the substrate W. In addition, the lifting mechanism 70 can raise and lower both the substrate W and the heating unit 60. The lifting mechanism 70 can change the distance between the substrate W held by the rotating holding part 10 and the cover 63 by moving at least one of the substrate W held by the rotating holding part 10 and the cover 63.

[0187] (2) The height of the opposing surfaces 631 of the cover 63 during each process is not limited to P1 to P4. For example, if the opposing surfaces 631 of the cover 63 can be dried, the second drying process can also be performed after the opposing surfaces 631 of the cover 63 are positioned between the heating position P2 and the approach position P3. In addition, the removal / removal position P1 and the rinsing position P4 can also be at the same height.

[0188] As long as the opposing surfaces 631 of the cover 63 can be dried in the first drying process, the heating position P2 can be at the same height as the removal / removal position P1 or the rinsing position P4, or it can be between the removal / removal position P1 and the rinsing position P4. Alternatively, the heating position P2 can also be at the same height as the approach position P3. By changing the height of the heating position P2 in this way, the output of the light-emitting element 61 can be changed so that the light-emitting element 61 is not damaged by the radiant heat generated when heating the substrates Wp and Wd, thereby allowing for efficient heating of the substrates Wp and Wd. Furthermore, as long as the output of the light-emitting element 61 can be changed to avoid damage to the light-emitting element 61, the heating position P2 for heating the substrate Wp during the processing of the substrate Wp can also be different from the heating position P2 for heating the substrate Wd during the first drying process.

[0189] (3) The cleaning process of the cover can also be omitted. In addition, the second drying process can also be omitted. If the second drying process is omitted, the droplets d adhering to the opposing surfaces 631 of the cover 63 can be removed by extending the time of the first drying process.

[0190] (4) In the cover cleaning process, the product substrate Wp can be used instead of the dummy substrate Wd. That is, when the rinsing solution Lc is supplied to the product substrate Wp, the opposing surface 631 of the cover 63 can be positioned at the proximity position P3, and the cover cleaning process can be performed simultaneously and in parallel during the rinsing process of the substrate Wp. In this case, if the determination unit 83 determines that the number of processed substrates Wp has reached the predetermined number, the cover cleaning process is performed in parallel with the rinsing process of the substrates Wp to be processed next. Subsequently, after the substrate Wp is removed, the dummy substrate Wd is brought in and subjected to the first drying process and the second drying process. As a result, the maintenance efficiency of the cover 63 is improved compared to the case where the dummy substrate Wd is used for the cover cleaning process.

[0191] (5) In the above embodiment, the second drying process starts simultaneously with the start of the first drying process. However, as long as the droplets d adhering to the opposing surface 631 can be removed and the opposing surface 631 can be dried, the second drying process may not start simultaneously with the start of the first drying process. For example, the second drying process may start after the start of the first drying process. That is, the first drying process may start, and the second drying process may start in the middle of the first drying process. In addition, in the above embodiment, the process is carried out in a manner that includes the parallel execution of the first drying process and the second drying process, but it may not include the parallel execution of the first drying process and the second drying process. For example, the second drying process may start after the end of the first drying process. In this case, the opposing surface 631 may be positioned at the heating position P2 for the first drying process, and the second drying process may be carried out after it is moved to the approach position P3.

[0192] In addition, the second drying process ends after the first drying process ends, but as long as the droplets d attached to the opposing surface 631 can be removed and the opposing surface 631 can be dried, it can end before the first drying process ends, or it can end at the same time as the first drying process ends.

[0193] (6) The gas supply unit 40 can also remove the droplets d on the facing surface 631 by supplying gas from the outside of the facing surface 631 of the cover 63 to the space S between the facing surface 631 of the cover 63 and the substrate Wd. In this case, the height of the facing surface 631 of the cover 63 in the second drying process is not limited to the approach position P3.

[0194] (7) In the above embodiment, the gas supply pipe 41 of the gas supply unit 40 is connected to the rinsing liquid supply pipe 32, but the gas supply pipe 41 may also be connected to the processing liquid supply pipe 22 of the processing liquid supply unit 20, and the gas is ejected from the first nozzle 21. When the gas is ejected, the processing liquid Lp remaining in the processing liquid supply pipe 22 may be ejected along with the gas passing through the processing liquid supply pipe 22 and adhere to the opposing surface 631. Therefore, it is preferable to connect the gas supply pipe 41 to the rinsing liquid supply pipe 32, which supplies rinsing liquid Lc that has minimal impact even if it adheres to the opposing surface 631, as in the above embodiment, and eject the gas from the second nozzle 31. Additionally, the gas supply unit 40 may also have a third nozzle, independent of the first nozzle 21 and the second nozzle 31, connected to the gas supply pipe 41 and ejecting gas. In this case, the third nozzle of the gas supply unit 40 is inserted into the support unit 62 and the cover 63, and its outlet is set to face the center of the substrate W held by the rotation holding unit 10.

[0195] (8) The substrate processing apparatus 1 may also include a liquid detection unit that detects droplets d adhering to the opposing surface 631 of the cover 63. The liquid detection unit may be, for example, a camera that takes pictures of the opposing surface 631 of the cover 63. The control device 80 determines whether the result detected by the liquid detection unit exceeds a threshold. The threshold may be based on whether droplets d are attached or not, or it may be based on a predetermined amount of droplets d being attached in large quantities. Furthermore, when the determination unit 83 determines that droplets d are attached to the opposing surface 631, maintenance processing of the cover 63 is performed. Thus, maintenance processing can be performed only when maintenance processing of the cover 63 is required, thereby improving processing efficiency.

[0196] (9) In addition, in the above embodiment, the cover 63 is maintained whenever the number of processed substrates Wp reaches a predetermined number. However, the predetermined number can be multiple or just one. That is, the cover 63 can be maintained every time a substrate Wp is processed.

[0197] (10) The processing performed by the substrate processing apparatus 1 is not limited to etching. Any apparatus that heats the substrate Wp while supplying processing liquid Lp for processing is acceptable. For example, it can also be a resist removal process to remove the resist film formed on the surface of the substrate Wp to be processed.

[0198] (11) A thermometer may also be provided to measure the temperature of the substrate Wd, and during the first drying process, the heating unit 60 may be controlled to reach the temperature required for drying the substrate Wd to become the facing surface 631. Furthermore, heating by the heating unit 60 may be stopped after a predetermined time has elapsed after the substrate Wd has reached the temperature required for drying the facing surface 631. Thus, the first drying process can be performed at an appropriate temperature and for an appropriate time, thereby achieving efficient drying of the facing surface 631.

[0199] (12) The rinsing solution Lc supplied during the hood cleaning process can also be heated to a temperature higher than room temperature. In this case, a heating mechanism can be installed midway through the rinsing solution supply pipe 32. This allows the opposing surface 631 to be preheated before the first drying process of heating the opposing surface 631. Alternatively, the gas supplied during the second drying process can also be heated to a high temperature. In this case, a heating mechanism can be installed midway through the gas supply pipe 41. This improves the drying efficiency of the opposing surface 631.

[0200] The dummy substrate Wd does not necessarily have to be a silicon wafer. The dummy substrate Wd can be made of any material that can absorb the light emitted by the light-emitting element 61 and radiate heat. In addition, as long as the rotating holding part 10 can hold the dummy substrate Wd and keep the facing surface 631 dry, the dummy substrate Wd may not have the same diameter as the substrate Wp that becomes the product.

[0201] [Other Implementation Methods]

[0202] This specification describes embodiments of the invention, but these embodiments are provided as examples and are not intended to limit the scope of the invention. Such embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the scope of the invention. Embodiments or variations thereof are included within the scope or spirit of the invention, and likewise within the scope of the claims and their equivalents.

Claims

1. A substrate processing apparatus, characterized in that... include: The rotating holding part holds the substrate and rotates it. The processing liquid supply unit supplies processing liquid to the substrate held and rotated by the rotating holding unit; The heating unit heats the substrate by irradiating it with light, which is held by the rotating holding unit. The cover has a facing surface that faces the substrate held by the rotating holding part, and is disposed between the held substrate and the heating part, so that the light irradiated by the heating part can pass through; as well as The control device controls the rotating holding part, the processing liquid supply part, and the heating part. The control device performs control, in order to The processing liquid is supplied to the substrate, which is rotated by the rotating holding part, thereby processing the substrate. A first drying process is performed, which involves heating the substrate by irradiating it with light while it is held by the rotating holding part, thereby drying the opposing surfaces of the cover.

2. The substrate processing apparatus according to claim 1, characterized in that, The control device performs control, in order to The processing liquid is supplied to the first substrate held by the rotating holding part, thereby processing the first substrate. A first drying process is performed, in which a second substrate, which is different from the first substrate and is held by the rotating holding part, is heated by irradiating light, thereby drying the opposing surfaces of the cover.

3. The substrate processing apparatus according to claim 2, characterized in that, The first substrate is the substrate that becomes the product. The second substrate is a dummy substrate.

4. The substrate processing apparatus according to claim 1, characterized in that, It also includes a lifting mechanism that moves at least one of the substrate held by the rotating holding part and the cover, thereby changing the distance between the opposing surfaces of the substrate held by the rotating holding part and the cover. The control device controls the first drying process to be performed when the distance between the substrate held by the rotating holding part and the opposing surfaces of the cover is a second distance that is shorter than the distance when the substrate was moved in, i.e., the first distance.

5. The substrate processing apparatus according to claim 1, characterized in that... Also includes: The rinsing solution supply unit supplies rinsing solution to the substrate; as well as A lifting mechanism moves at least one of the substrate held by the rotating holding part and the cover, thereby changing the distance between the opposing surfaces of the substrate held by the rotating holding part and the cover. The control device controls the cleaning process of the cover, which involves moving at least one of the substrate held by the rotating holding part and the cover, so that the opposing surfaces of the cover come into contact with the rinsing liquid supplied to the substrate through the rinsing liquid supply part, thereby cleaning the opposing surfaces. The cleaning process for the cover is performed before the first drying process.

6. The substrate processing apparatus according to claim 1, characterized in that, It also includes a gas supply unit that supplies gas to the space formed between the opposing surfaces of the substrate and the cover. The control device controls the second drying process, which involves supplying gas to the space formed between the substrate and the opposing surface, thereby drying the opposing surface.

7. The substrate processing apparatus according to claim 6, characterized in that, The second drying process begins at the same time as the first drying process begins, or after the first drying process begins.

8. The substrate processing apparatus according to claim 4, characterized in that, It also includes a gas supply unit that supplies gas to the space formed between the opposing surfaces of the substrate and the cover. The control device controls the second drying process to perform a second drying process in a state where the distance between the substrate held by the rotating holding part and the opposing surface of the cover is a third distance shorter than the second distance. The second drying process involves supplying gas to the space formed between the substrate and the opposing surface, thereby drying the opposing surface.

9. The substrate processing apparatus according to claim 6, characterized in that, The first drying process and the second drying process are performed in parallel for at least a portion of the time.

10. The substrate processing apparatus according to any one of claims 1 to 9, characterized in that, It also includes a liquid detection unit that detects liquid droplets adhering to the opposing surfaces of the cover. The control device controls the process to perform the first drying treatment when the result detected by the liquid detection unit exceeds a threshold.

11. A substrate processing method, characterized in that... include: The rotation process involves holding the substrate and rotating it. The processing step involves supplying a processing liquid to the rotating substrate to process it. as well as The drying process dries the cover disposed between the held substrate and the heating unit, which heats the substrate by irradiating it with light. The cover allows the light irradiated by the heating element to pass through. In the drying process, the heating unit irradiates the substrate with light to heat the substrate, thereby drying the opposing surfaces of the substrate held in the cover.

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