System and method for determining when to trigger a stop process during a semiconductor manufacturing process

Abstract

Methods and systems for determining when to trigger a halt process during a semiconductor manufacturing process are disclosed. An example method includes measuring a plurality of resistances of a heating lamp during a time period, making N consecutive comparisons of a previous resistance of the plurality of measured resistances to a current resistance of the plurality of measured resistances to determine whether a difference between each comparison of the previous resistance and the current resistance exceeds a threshold, triggering the halt process based on the difference between each of the N consecutive comparisons of the previous resistance and the current resistance exceeding the threshold, and generating one or more instructions to pause the semiconductor manufacturing process based on triggering the halt process. An example system can perform the method of determining when to trigger the halt process.

Description

Technical Field

[0001] This disclosure generally relates to systems including lamps used in semiconductor manufacturing processes and methods of using such systems. More specifically, this disclosure relates to systems and methods for determining when to trigger an abort process during a semiconductor manufacturing process. Background Technology

[0002] The use of one or more lamps in semiconductor manufacturing processes is known, and in this example, such lamps may be positioned near and outside the reaction chamber used for semiconductor manufacturing. These lamps can be used to provide heat in the form of infrared (IR) energy to the chamber containing the substrate during one or more stages of the semiconductor manufacturing process, for example, maintaining the desired deposition temperature within the chamber as the substrate is introduced into the reaction chamber and crosses the substrate. Because such lamps are repeatedly used in subsequent semiconductor manufacturing processes, their efficiency or lifespan decreases and / or they fail over time and require replacement.

[0003] It is known to replace such lamps after a predetermined amount of time, for example, a predetermined amount of time after the installation of a new lamp, or after a lamp failure. However, this periodic lamp replacement method based on such predetermined time or lamp failure may lead to the prolonged use of lamps that are no longer effective or reliable and / or may lead to the unnecessary replacement of lamps that are still effective and reliable. This occurs because each lamp can have an individualized power ratio applied to it, such that some lamps in the system may have more power applied to them within the same amount of time.

[0004] Furthermore, if the lamp's health deteriorates to the point where it ceases to function properly, its use during semiconductor manufacturing processes can lead to adverse results regarding substrate quality. Additionally, using degraded lamps may result in substrate rejection and the need to restart the semiconductor manufacturing process, leading to low yields.

[0005] Any discussion set forth in this section (including discussions of problems and solutions) has been included in this disclosure for the purpose of providing context for this disclosure only. Such discussion should not be construed as an admission that any or all information was known at the time of making this invention or otherwise constitutes prior art. Summary of the Invention

[0006] Therefore, a system and method are desired for determining when to trigger an interruption process during semiconductor manufacturing based on monitoring the condition of one or more lamps. In doing so, the lamps can be replaced to avoid prolonged use of inefficient or unreliable lamps. Furthermore, the semiconductor manufacturing process can be paused based on determining that the condition of a lamp has deteriorated to the point where lamp replacement may be necessary.

[0007] The example systems disclosed herein are configured to determine when to trigger an abort process during a semiconductor manufacturing process. In the example, the semiconductor manufacturing process utilizes a reactor including a reaction chamber. A substrate support or base is disposed within the reaction chamber, and a lamp is disposed outside the reaction chamber and optically coupled to the base via the chamber wall. In the example, the lamp can be any lamp used in a semiconductor manufacturing process. In the example, the lamp is a heating lamp that provides radiant energy or heat inside the chamber. Furthermore, the systems and methods described herein can suitably use multiple such lamps around the exterior of the reaction chamber.

[0008] The example system includes a controller configured or programmed to determine when to trigger an abort process during a semiconductor manufacturing process. In the example, the controller is configured or programmed to measure multiple resistances of a heating lamp over a time period. In the example, the controller is configured or programmed to compare a first resistance among the measured resistances with a second resistance among the measured resistances to determine if the difference between the first and second resistances exceeds a threshold, wherein the first resistance is measured before the second resistance. In the example, the controller is configured or programmed to compare the second resistance with a third resistance among the measured resistances to determine if the difference between the second and third resistances exceeds a threshold, wherein the second resistance is measured before the third resistance. In the example, the controller is configured or programmed to trigger an abort process based on both the difference between the first and second resistances exceeding a threshold and the difference between the second and third resistances exceeding a threshold. In the example, the controller is configured or programmed to generate one or more instructions to pause the semiconductor process based on triggering the abort process.

[0009] In this example, the threshold can be between 0.5 ohms and 2 ohms. In this example, the measurement of multiple resistances is performed after the etching process and before the pre-coating process in the semiconductor manufacturing process.

[0010] In the example, the controller is also configured or programmed to control the user interface based on the termination process being triggered, so as to display an indication that the termination process has been triggered.

[0011] In the example, the exemplary system also includes a plurality of heating lamps disposed outside the reaction chamber and optically coupled to the base via the walls of the reaction chamber. In the example, the controller is also programmed or configured to determine when to trigger a termination process for each of the plurality of heating lamps.

[0012] In the example, the exemplary system also includes a sensor for determining the heating lamp current, wherein the controller measures multiple resistors based on the heating lamp current determined by the sensor and the amount of electrical power used to power the heating lamp.

[0013] In the example, the mathematical equation P=I is used. 2R is used to measure each of several resistors. In this example, one or more pyrometers are used to determine the amount of electrical power.

[0014] In the example, the system includes a controller configured or programmed to measure multiple resistances of a heating lamp over a time period. In the example, the controller is configured or programmed to perform N consecutive comparisons of a previous resistance among the measured resistances with a current resistance among the measured resistances to determine whether the difference between each comparison of the previous and current resistances exceeds a threshold. In the example, the controller is configured or programmed to trigger a halt process based on the difference between each of the N consecutive comparisons of the previous and current resistances exceeding the threshold. In the example, the controller is configured or programmed to generate one or more instructions to pause the semiconductor manufacturing process based on triggering the halt process.

[0015] In the example, according to the aspects described herein, the system includes a controller, which includes one or more processors and a memory storing computer-executable instructions that, when executed by the one or more processors, cause the controller to determine when to trigger an abort process during a semiconductor manufacturing process.

[0016] In the example, according to the aspects described herein, the system includes a controller, which includes one or more computer-readable media that, when executed by the controller, cause the controller to determine when to trigger an abort process during a semiconductor manufacturing process.

[0017] In the example, a method for determining when to trigger an abort process during a semiconductor process is performed by the following steps: measuring multiple resistances of a heating lamp during a time period; comparing a first resistance among the measured multiple resistances with a second resistance among the measured multiple resistances to determine whether the difference between the first resistance and the second resistance exceeds a threshold, wherein the first resistance is measured before the second resistance; comparing the second resistance with a third resistance among the measured multiple resistances to determine whether the difference between the second resistance and the third resistance exceeds a threshold, wherein the second resistance is measured before the third resistance; triggering an abort process based on the difference between the first resistance and the second resistance exceeding the threshold, and the difference between the second resistance and the third resistance exceeding the threshold; and generating one or more instructions for pausing the semiconductor process based on triggering the abort process.

[0018] In the example, the method for determining when to trigger an abort process during a semiconductor process is performed by: measuring multiple resistances of a heating lamp over a period of time; making N consecutive comparisons between a previous resistance among the measured multiple resistances and a current resistance among the measured multiple resistances to determine whether the difference between each comparison of the previous resistance and the current resistance exceeds a threshold; triggering an abort process based on the difference between each comparison of the N consecutive comparisons of the previous resistance and the current resistance exceeding the threshold; and generating one or more instructions to pause the semiconductor manufacturing process based on triggering the abort process.

[0019] The example systems and methods disclosed herein enable the independent monitoring of the condition of one or more heating lamps during use in a semiconductor manufacturing process, providing a more reliable method for determining when to pause the semiconductor manufacturing process in order to replace deteriorated heating lamps that have been determined to be nearing the end of their defined effective lifespan. Attached Figure Description

[0020] Exemplary embodiments of this disclosure can be more fully understood by considering the following illustrative drawings, and by referring to the detailed embodiments and claims.

[0021] Figure 1 This is a schematic diagram of a heating lamp system according to an exemplary embodiment of the present disclosure;

[0022] Figure 2 This is a cross-sectional view of a reactor system according to another exemplary embodiment of the present disclosure;

[0023] Figure 3 This is a cross-sectional view of a reactor system according to another exemplary embodiment of the present disclosure;

[0024] Figure 4 This is a cross-sectional top view of a reactor system according to another exemplary embodiment of the present disclosure;

[0025] Figure 5 This is a schematic diagram of a heating lamp system according to another exemplary embodiment of the present disclosure;

[0026] Figure 6 This is a diagram illustrating a method for determining when to trigger an abort process according to exemplary embodiments of the present disclosure;

[0027] Figure 7 This is a diagram illustrating a method for determining when to trigger an abort process according to exemplary embodiments of the present disclosure; and

[0028] Figure 8 A user interface according to an exemplary embodiment of the present disclosure is shown. Detailed Implementation

[0029] Reference will now be made to the accompanying drawings, wherein the same reference numerals identify similar structural features or aspects of this disclosure. Although the systems or methods disclosed herein may be described in this specification as being used with heating lamps used during semiconductor manufacturing processes, it should be understood that the systems and methods disclosed herein for determining when to trigger an abort process can be used with heating lamps or any other type of lamp that may be used in semiconductor manufacturing processes.

[0030] Furthermore, in this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any indicated range may include or exclude endpoints. Additionally, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value and include equivalents, and may refer to an average, median, representative value, multi-value, or other derived representative value. Furthermore, in some embodiments of this disclosure, the terms “include,” “including,” “consisting of,” and “having” may independently mean “generally or broadly includes,” “comprising,” “substantially constitutes,” or “consisting of.” The meaning of any definition in this disclosure does not necessarily exclude the common and customary meanings in some embodiments.

[0031] Figure 1 An exemplary heating lamp system 100 suitable for a reactor system is shown. The heating lamp system 100 includes a heating lamp 120 and a controller 102. The heating lamp 120 may include any suitable heating lamp, such as an infrared heating lamp. The heating lamp 120 may be a linear lamp. The heating lamp 120 may be a spotlight. The heating lamp system 100 may include a linear lamp, a spotlight, or both. The controller 102 may be configured to provide independent control to the heating lamp 120. An electric power source 116 may communicate electronically with the heating lamp 120 and is configured to send power to the heating lamp 120. The electric power source 116 also communicates electronically with the controller 102. As an example, the controller 102 may be configured to generate a signal (e.g., power ratio output) for independently controlling the heating lamp 120 based on sensed temperature. An exemplary method for generating the control signal is described below.

[0032] In the example shown, controller 102 includes processor 104 and program module 110. Processor 104 manages (or is accessible by) memory 112 of controller 102, and program module 110 may include software or executable instructions or code executable by processor 104 to provide the temperature monitoring and control functions described herein. Controller 102 may also include user interface 108 for facilitating operator selection between control or program module 110, interaction with monitored temperature data, modification or updating deposition or processing parameters, etc. User interface 108 may include a graphical user interface (GUI) generated by processor 104, which may be displayed on a monitor, touchscreen, etc. The GUI may be used, for example, to display indications for triggering abort processes, as described herein. Device interface 106 (including, for example, data registers, data buses, data lines, address lines, etc.) may be provided as part of controller 102, having one or more input / output (I / O) components to facilitate wired or wireless communication between controller 102 and heating lamp 120.

[0033] Figure 2 An exemplary reactor system 200 suitable for use in chemical vapor deposition (CVD) for semiconductor manufacturing is shown. The reactor system 200 includes a reaction chamber 202, a substrate support or base 204 configured to house a substrate 214, a heating lamp array 225 having one or more heating lamps 120, a first pyrometer 208, a second pyrometer 210, and a controller 102. The reactor system 200 may also include a reflector or reflective surface 232, wherein at least a portion of the heating lamp array 225 is located between the reflective surface 232 and the reaction chamber 202. The reactor system 200 may be an epitaxial reactor system utilizing atmospheric pressure (e.g., between about 500 Torr and about 760 Torr) or reduced pressure (e.g., between about 3 Torr and about 500 Torr) during deposition. The controller 102 may be as described above and may be configured to individually control the power ratio output from an electrical power source 116 to each heating lamp 120 of the heating lamp array 225.

[0034] As discussed in more detail below, the heating lamp array 225 may include one or more heating lamps aligned in a first direction and one or more heating lamps aligned in a second direction (e.g., substantially perpendicular—e.g., offset 85-95 degrees from the first direction). For example, the heating lamp array 225 may include a first portion of heating lamps 235 aligned in the first direction and a second portion of heating lamps 236 aligned in the second direction. Heating lamp 120 may be or include linear lamps. Additionally, the heating lamp array 225 may include one or more (e.g., infrared) spotlights 216. The heating lamp array 225 is supported outside the reaction chamber 202 to provide heat energy within the reaction chamber 202 without significant absorption by the reaction chamber walls.

[0035] In this example, reactor system 200 is used to perform epitaxial deposition of a material including silicon on a single substrate. In this example, reactor system 200 is capable of performing multiple deposition steps within reaction chamber 202. While reaction chamber 202 has been described for depositing a material including silicon, it should be understood that reaction chamber 202 can be used to deposit materials other than silicon during semiconductor manufacturing processes. Furthermore, although exemplary embodiments are described in the context of chemical vapor deposition or epitaxial reactors for processing semiconductor wafers, the processing methods described herein can be used in conjunction with other heating and / or cooling systems, such as systems employing induction or resistance heating.

[0036] The reaction chamber 202 can be formed of any suitable material, such as ceramic materials including quartz and sapphire, or any other material that is transparent to the radiation emitted from the lamps 120, 216. As a specific example, the reaction chamber 202 can be formed of quartz, which transmits the electromagnetic radiation emitted by the lamps 120, 216 and the radiation emitted by the substrate supported on the substrate support 204 to the pyrometers 208, 210, from which the pyrometers 208, 210 determine, for example, the temperatures at a first substrate position 218 and a second substrate position 220 corresponding to the spacing between the pyrometers 208, 210. In some examples, the reaction chamber 202 can have planar walls, such as a planar upper wall and a planar lower wall. According to some examples, one or more of the upper and lower walls can have an arcuate or dome-shaped form.

[0037] The substrate support 204 may be formed of, for example, graphite and may have a silicon carbide coating. In some cases, the substrate support 204 is formed of a material that emits radiation, which is used by pyrometers 208 and 210 to measure the temperature of the substrate support 204. As shown, the substrate support 204 may be connected to a rotatable shaft 223, which is configured to rotate the substrate support 204 in the direction R.

[0038] Although Figure 2 A single reactor (e.g., single-wafer, cold-wall, cross-flow reactor) for semiconductor device fabrication is illustrated; however, it should be understood that semiconductor manufacturing processes can utilize equipment comprising two or more such reactors, which are operated to facilitate the scaling up of the fabrication of multiple semiconductors. Therefore, the systems and methods disclosed herein can be configured to monitor the lamps of a single reactor or multiple reactors, depending on the specific type of semiconductor manufacturing equipment used.

[0039] In an example embodiment, heating lamp 120 is powered by power source 116, which is independent of powering other components used during the semiconductor manufacturing process and provides a known amount or level of electrical power, such that each individual heating lamp independently receives a known amount of electrical power. In the example, the heating lamps may each be powered by a corresponding individual power source, or they may each be powered by the same power source 116. Whether powered by the same power source 116 or by multiple power sources 116, each lamp 120, 216 can receive individualized power based on, for example, the direct heat distribution within the reaction chamber or on the substrate. Individualized or independent power can be based on a ratio of the total power output of one or more power sources.

[0040] Figure 3 Another exemplary reactor system 300 suitable for semiconductor manufacturing is shown. The reactor system 300 includes a reaction chamber 302, a substrate support or base 304, a heating lamp array 335 having one or more heating lamps 120, a first pyrometer 308, a second pyrometer 310, and a controller 102. The reactor system 300 may also include a reflector or reflective surface 332, wherein at least a portion of the heating lamp array 325 is located between the reflective surface 332 and the reaction chamber 302. The reactor system 300 may be, for example, an epitaxial reactor system that utilizes depressurization, for example, the pressure in the reaction chamber 302 during operation may be between about 3 Torr and about 500 Torr. The controller 102 may be as described above and may independently control the power ratio output from one or more electrical power sources 116 to each heating lamp 120 of the heating lamp array 325.

[0041] The reactor system 300 also includes a separator 338 disposed within the reaction chamber 302. The separator 338 helps separate the top section 360 and the bottom section 362 of the reaction chamber 302. An injection flange 342 is disposed at one end of the reactor system 300 and is configured and arranged to introduce precursors and / or reactants into the reaction chamber 302. A gate valve 344 may be disposed at the same end and can be used to open and close to allow loading and unloading of the substrate. An exhaust flange 340 is disposed at the other end of the reactor system 300, and is configured and arranged to remove exhaust gases from the reaction chamber 302 during or after deposition.

[0042] As discussed in more detail below, the heating lamp array 325 may include one or more heating lamps aligned in a first direction and one or more heating lamps aligned in a second direction (e.g., substantially perpendicular—e.g., offset 85-95 degrees from the first direction). For example, the heating lamp array 325 may include a first portion of a heating lamp array 335 aligned in the first direction and a second portion of a heating lamp 336 aligned in the second direction. The heating lamp 120 may be or include linear lamps. Additionally, the heating lamp array 325 may include one or more (e.g., infrared) spotlights 316. The heating lamp array 325 is supported outside the reaction chamber 302 to provide heat energy within the reaction chamber 302 without significant absorption by the reaction chamber walls.

[0043] In this example, reactor system 300 is used to perform epitaxial deposition of a material including silicon on a single substrate. In this example, reactor system 300 is capable of performing multiple deposition steps within reaction chamber 302. Additionally or alternatively, reaction chamber 302 can be used to deposit materials other than silicon during semiconductor manufacturing processes, and / or etch surfaces, and / or clean surfaces. The processing methods described herein can also be used in conjunction with other heating and / or cooling systems, such as systems employing induction or resistance heating.

[0044] The reaction chamber 302 can be formed of any suitable material, such as ceramic materials including quartz and sapphire, or any other material that is transparent to the radiation emitted from the lamps 120, 316. As a specific example, the reaction chamber 302 can be formed of quartz, which transmits the electromagnetic radiation emitted by the lamps 120, 316 and the radiation emitted by the substrate supported on the substrate support 304 to the pyrometers 308, 310, from which the pyrometers 308, 310 determine, for example, the temperatures at a first substrate position 318 and a second substrate position 320 corresponding to the spacing between the pyrometers 308, 310. Other reactor system 300 components 102, 116, 120, and 214 can be combined as described above. Figure 2 As stated above.

[0045] Although Figure 3 A single reactor for semiconductor manufacturing is shown; however, it should be understood that semiconductor manufacturing processes can utilize equipment comprising two or more such reactors, which are operated to facilitate the scaling up of the manufacturing of multiple semiconductors. Therefore, the systems and methods disclosed herein can be configured to monitor the lamps of a single reactor or multiple reactors, depending on the specific type of semiconductor manufacturing equipment used.

[0046] Figure 4An exemplary heating lamp array 400 suitable for use as heating lamp arrays 225 and 325 according to examples of this disclosure is shown. The heating lamp array 400 includes a first region of one or more heating lamps 402 and a second region of one or more heating lamps 404. The exemplary heating lamp array may suitably include more than two heating lamp regions. For example, the exemplary heating lamp array may include 3, 4, 5, 7, or more regions. Although a specific number of heating lamps are shown in the first region of heating lamp 402 and the second region of heating lamp 404, any suitable number of heating lamps may be used in the respective regions. Furthermore, the first region of one or more heating lamps 402 and the second region of one or more heating lamps 404 may include heating lamps described herein as heating lamp 120.

[0047] For example, the first region of the heating lamp 402 may be included in the substrate support 204. Figure 2 ), substrate support 304 ( Figure 3 Above and / or below, or in reaction chamber 202 Figure 2 ), reaction chamber 302 ( Figure 3 One or more linear heating lamps above and / or below the substrate support 204, substrate support 304, or reaction chamber 202, reaction chamber 302. The linear heating lamps may be, for example, SCR linear lamps. Each linear lamp may exhibit a maximum output of, for example, approximately 10,000 W. Additionally or alternatively, a second region of heating lamp 404 may include one or more linear lamps above and / or below the substrate support 204, substrate support 304, or reaction chamber 202, reaction chamber 302. Furthermore, one or more of the first region of heating lamp 402 or the second region of heating lamp 404 may include one or more spotlights 406-412 above and / or below the substrate support 204, substrate support 304, or reaction chamber 202, reaction chamber 302. The spotlights may each be formed, for example, by four separate dots, and may be located, for example, on the substrate support 204 and reaction chamber 202. Figure 2 Below, or on the substrate support 304 and the reaction chamber 302 ( Figure 3 Below. The maximum capacity of each (e.g., round) spotlight can be approximately 1000-2000 W.

[0048] exist Figure 4 In the example shown, the heating lamp array 400 includes a substrate support 204 ( Figure 2 ) and substrate support 304 ( Figure 3 ) or reaction chamber 202 ( Figure 2 ) and reaction chamber 302 ( Figure 3The heating lamps 1-11 are located above the substrate support 204 and substrate support 304, or below the reaction chamber 202 and reaction chamber 302, and the heating lamps 12-23 and spotlights 406-412 are located below the substrate support 204 and substrate support 304, or below the reaction chamber 202 and reaction chamber 302. Various configurations and numbers of heating lamps are conceivable, and the heating lamps may include linear heating lamps. For example, a first region of one or more heating lamps 402 may include 2 to 12, 2 to 8, or 2 to 4 (e.g., linear) first region heating lamps above and / or below the substrate support 204 and substrate support 304, or below the reaction chambers 202 and 302 (a total of 2 to 24, 2 to 16, or 2 to 8 linear heating lamps). Additionally or alternatively, the second region of one or more heating lamps 404 may include 2 to 12, 2 to 8, or 2 to 4 (e.g., linear) second region heating lamps—above or below substrate supports 204 and 304 and / or reaction chambers 202 and 302 (a total of 2 to 24, 2 to 16, or 2 to 8 heating lamps). Furthermore, one or more of the first region of heating lamps 402 and the second region of heating lamps 404 may optionally be 1 to 10, 2 to 6, or about 4 spotlights above and / or below substrate supports 204 and 304 or reaction chambers 202 and 302. Figure 4 The specific example shown includes a first region of one or more heating lamps 402, which includes seven first region heating lamps (heating lamps 3-9) above reaction chambers 202 and 302, eight first region heating lamps (heating lamps 14-21) below reaction chambers 202 and 302, and four first region spotlights 406-412 below reaction chambers 202 and 302. A second region of one or more heating lamps 404 includes four (e.g., linear) second region heating lamps (heating lamps 1, 2, 10, and 11) above reaction chambers 202 and 302 and four (e.g., linear) second region heating lamps (heating lamps 12, 13, 22, and 23) below reaction chambers 202 and 302.

[0049] According to the examples of this disclosure, the heating lamps in the first region of heating lamp 402 (e.g., heating lamps 3-9 and 14-21) are located inside the heating lamps in the second region of heating lamp 404 (e.g., heating lamps 1, 2, 10, 13, 22, and 23). Other configurations are also contemplated. For example, the heating lamps in the second region of heating lamp 404 may be located inside the heating lamps in the first region of heating lamp 402. Alternatively, the heating lamps in the first region of heating lamp 402 may be alternated or grouped in other configurations.

[0050] Refer again Figure 2 and Figure 3The controller 102 can be configured to provide independent control to one or more areas of the heating lamps (e.g., areas of heating lamps 402 and 404) and / or one or more heating lamps (e.g., heating lamps 1-23) within each area of ​​the heating lamps. Power offset can be used to provide different power levels to the individual heating lamps within the heating lamp area to obtain a desired temperature profile and / or to account for the different efficiencies of one or more heating lamps within the heating lamp area.

[0051] For example, controller 102 can be configured to generate a signal (e.g., a proportional power output) for use based on a first substrate or base location 218 ( Figure 2 ) and 318 ( Figure 3 The controller 102 independently controls a first region of heating lamp 402 based on the temperature sensed at locations 220 and 320 on the second substrate or base, and independently controls a second region of heating lamp 404 based on the temperature sensed at locations 220 and 320 on the second substrate or base. For this purpose, temperature information or pyrometer temperature output is transmitted to the controller 102 for processing, and in response, the controller 102 generates (e.g., a corresponding power ratio) outputs to the regions of heating lamps 1-23 or heating lamps 402 and 404. These (e.g., power ratio) outputs from the controller 102 can be individually assigned to each heating lamp or each heating lamp within a region, depending on the desired control profile determined by the sensed temperature within the reaction system.

[0052] Although all heating lamps can operate for the same amount of time and accumulate the same total operating hours, some heating lamps may age faster than others due to factors such as the power ratio output allocated to each heating lamp for the process occurring in the reaction chamber. Individual monitoring of each heating lamp can identify those aging faster, facilitating lamp replacement and / or repositioning, for example, moving a heating lamp from a high power ratio output position to a low power ratio output position once monitoring data shows that a lamp is beginning to fail. This allows for avoiding a time-based total lamp array replacement strategy, instead replacing or repositioning lamps when the controller 102 triggers an abort process, as discussed in more detail below.

[0053] Figure 5This is a diagram illustrating another system 500. System 500 includes a plurality of heating lamps 120 used in semiconductor manufacturing processes and disposed in a reactor system. Heating lamp array 520 may be used as heating lamp arrays 225, 325 and / or 400. In an exemplary embodiment, the heating lamps 120 receive power from an electrical power source 116 as described above. In the example shown, each heating lamp 120 receives electrical power from a corresponding separate electrical power source 501 that may form part of the power source 116. Each power source 501 may be configured to provide a certain ratio of power to the respective heating lamps 120 and / or the areas of the heating lamps 120. In the example, a sensor 502 may be inserted between each heating lamp 120 and the corresponding electrical power source 501, and each sensor 502 (e.g., a power sensor, a current sensor, etc.) is configured to receive electrical power from the corresponding electrical power source 501 via a suitable electrical conductor, wire or cable 504. The electrical power received by each sensor 502 is transferred to the corresponding heating lamp 120 via a suitable electrical conductor, wire, or cable 506. Alternatively, the sensor 502 may be configured to be directly connected to the conductive terminals of the heating lamp, thereby avoiding the use of wires or cables. In this example, the sensor 502 is configured to transfer or transfer electrical power received from the power source to the heating lamp without altering the amount of electrical power. In this example, the sensor is configured to measure the amount of current or current quantity associated with the corresponding heating lamp.

[0054] In this example, the heating lamps are direct current (DC) devices, and one or more power sources 501 are configured to provide DC power to each heating lamp 120. In such an example, each power source 501 may be provided in the form of a rectifier such as a silicon controlled rectifier (SCR). In this example, the current of each heating lamp 120, determined by a corresponding sensor 502 (which may form part of the SCR), is transmitted to a controller (e.g., controller 102) via a suitable electrical conductor, wire, or cable 508. Alternatively, the current information measured by each sensor 502 may be wirelessly transmitted from each sensor 502 to controller 102 using a wireless transmitter and receiver. The provided and measured power can be used to obtain the resistance value of each heating lamp, which can be recorded and stored in controller 102.

[0055] As briefly pointed out above, refer to Figure 1-5 The systems and methods disclosed herein for determining when to trigger an abort process include a controller 102 utilizing heating lamp data or information storage or memory, and a program for determining and / or comparing the resistance of the heating lamp. (Reference) Figure 5In this example, controller 102 is configured to provide indications of the status or condition of each heating lamp. These indications can be customized or varied according to user preferences, etc. In this example, controller 102 can be connected to device 514 via wire 512 or wirelessly for the purpose of displaying the status or condition of the heating lamps (e.g., providing a visual indication of the status or condition of the heating lamps), and / or for the purpose of providing an indication of when controller 102 triggers an abort process for subsequent action to replace the heating lamps. Furthermore, it should be understood that device 514 for providing indications of the status or condition of the heating lamps can be located near or away from the semiconductor manufacturing process machinery, depending on specific user preferences or circumstances.

[0056] As described above, in this example, the system includes a storage device or memory containing all determined heating lamp resistance values ​​for each heating lamp. In this example, each determined heating lamp resistance value includes the date and time for condition monitoring or tracking purposes. Additionally, the system can be configured such that user input 516 can store certain heating lamp information, such as information about the type of each individual heating lamp, information about the date and time a new heating lamp was installed, and information about the lamp's placement relative to the reactor. These are just a few examples of the different types of heating lamp-related information that can be input into the system, and it should be understood that other types of information that may help track and monitor the health of the heating lamps can also be included, and all such other information is intended to fall within the scope of determining when an abort process is triggered during semiconductor manufacturing, as disclosed herein.

[0057] In the example, system 500 can be configured to provide a desired user interface viewable on a device (such as device 514), which can be customized according to desired user preferences, etc. In the example, system 500 can provide a display menu that allows the user to select different display formats or pages, such as graphical displays, chart displays, etc., showing the determined resistance value or effective lifespan history of each individual lamp, or the most recently determined resistance value or effective lifespan of an individual lamp. These are just a few examples of heating lamp health display formats that can be provided by the system, and it should be understood that display formats other than those specifically disclosed are intended to fall within the scope of determining when an interruption process is triggered, as disclosed herein. In the example, the device can be in the form of a touchscreen display, etc., to facilitate user input or interaction with the heating lamp information menu.

[0058] Figure 6 An exemplary method 600 for determining when to trigger an abort process is shown, according to one or more aspects of this disclosure. Figure 1-5A heating lamp system and reactor system suitable for use in conjunction with method 600 are shown. Method 600 can be used in depressurized and atmospheric pressure epitaxial reaction chambers, such as those disclosed herein. Rearrangements, omissions, and / or other modifications may be made without departing from the scope of this disclosure. Figure 6 One or more steps are shown, and / or additional steps are added.

[0059] Method 600 may begin at step 602, which involves measuring multiple resistances of heating lamps within a reactor system (e.g., reactor system 200 or 300). In the example, controller 102 is configured and / or programmed to include or measure a known amount of electrical power directed to each heating lamp, and to determine the resistance of each individual heating lamp 120 based on the known amount of electrical power and the measured current of the heating lamp (provided by each sensor). In the example, controller 102 is programmed to use the mathematical equation P=I 2 R determines the resistance of each individual heating lamp, where "P" equals electrical power (watts), "I" equals current (amperes), and "R" is resistance (ohms). Power can be the power supplied to the heating lamps to achieve the desired temperature measured and controlled using one or more pyrometers 208, 210, 308, and 310. Configured in this way, controller 102 is programmed to determine the resistance associated with each individual heating lamp. In this example, the resistance value can be stored in the memory 112 of controller 102 or otherwise recorded. In this example, controller 102 can base the measured resistance on either depressurized baseline power or atmospheric pressure baseline power based on which reactor system is being used.

[0060] Resistance can be measured at the beginning or end of each process, and / or at periodic intervals and / or before and / or after the semiconductor manufacturing process. In the example, for the purpose of determining the resistance value of each heating lamp under known or consistent operating or heating conditions during the semiconductor manufacturing process (i.e., for consistency purposes), controller 102 is programmed by a user, etc., to determine the heating lamp resistance under the same or similar determined operating or heating conditions during each subsequent semiconductor manufacturing process. The specific operating conditions determined for such heating lamp resistance determination can vary based on many factors, such as user preferences associated with the semiconductor manufacturing process (e.g., preferences associated with the yield of one or more substrates, etc.), the specific type of semiconductor manufacturing process and its different operating conditions, and / or the type of heating lamp or other lamp to be measured.

[0061] When the reactor is not very busy, such as during reactor cleaning or etching, for example after a deposition process, it may be advantageous to measure multiple resistances. In the example, depending on the specific name given to the different operating cycles, the desired consistent operating cycle for determining the heating lamp resistance could be during a period that might be referred to as "pre-idle formulation." While the specific operating cycle chosen for determining the heating lamp resistance may vary, it should be understood that a characteristic of such a cycle is that it is identical for each subsequent heating lamp resistance determination, with the aim of providing consistent heating lamp operating conditions each time so that each subsequent heating lamp resistance determination is performed under the same operating conditions.

[0062] During step 602, a constant, predetermined power can be supplied to each lamp. A sensor, such as sensor 502, can be used, for example, to measure and calculate the average, mean, or median resistance of each lamp. In this example, multiple resistances are measured after the etching process in the semiconductor manufacturing process and before the pre-coating process.

[0063] In step 604, the controller 102 can compare the first resistance of the heating lamp with the second resistance of the heating lamp. In this example, the first resistance is measured before the second resistance is measured.

[0064] In step 606, the controller 102 can compare the second resistance of the heating lamp with the third resistance of the heating lamp. In this example, the second resistance is measured before the third resistance is measured.

[0065] In step 608, controller 102 can determine whether the difference between the first resistor and the second resistor exceeds a threshold. If the difference exceeds the threshold, method 600 can proceed to step 610. If the difference does not exceed the threshold, method 600 can return to step 602.

[0066] In the example, a threshold is determined and entered, stored, or otherwise recorded for controller access (e.g., entered via user interface 108 and stored in memory 112). The threshold can vary based on factors such as the specific type of heating lamp being used and / or the specific position of the heating lamp relative to the reactor. In the example, the threshold can be configured based on user preferences, depending on how conservative or aggressive the user desires regarding determining when to trigger the shutdown process. The user might prefer to be more conservative in triggering the shutdown process, so as to replace the heating lamp as soon as possible, rather than more aggressive in triggering the shutdown process, so as to maximize the lifespan / use of the heating lamp. In the example, the threshold is 0.5 ohms, representing a more conservative threshold. In another example, the threshold is 2 ohms, representing a more aggressive threshold. In yet another example, the threshold is between 0.5 ohms and 2 ohms. Different thresholds (e.g., thresholds between 0.5 ohms and 1.5 ohms, thresholds between 0.5 ohms and 1 ohm, etc.) can be configured without departing from the scope of this disclosure.

[0067] At step 610, controller 102 can determine whether the difference between the second resistor and the third resistor exceeds a threshold. If the difference exceeds the threshold, method 600 can proceed to step 612. If the difference does not exceed the threshold, method 600 can return to step 602.

[0068] At step 612, controller 102 may trigger a termination process based on the determinations made at steps 608 and 610. This may indicate, for example, that the heating lamp is approaching an inefficient operating state, which is nearing or approaching the end of the heating lamp's effective lifespan.

[0069] In step 614, controller 102 can pause the semiconductor manufacturing process by generating one or more instructions stored, for example, in memory 112 and executed by processor 104. In this way, controller 102 can advantageously prevent the semiconductor manufacturing process from continuing with potentially defective heating lamps, which could lead to poor quality associated with substrate production.

[0070] Figure 7 An exemplary method 700 for determining when to trigger an abort process is shown, according to one or more aspects of this disclosure. Figure 1-5 A heating lamp system and reactor system suitable for use in conjunction with method 700 are shown. Method 700 can be used in depressurized and atmospheric pressure epitaxial reaction chambers, such as those disclosed herein. Rearrangements, omissions, and / or other modifications may be made without departing from the scope of this disclosure. Figure 7 One or more steps are shown, and / or additional steps are added.

[0071] Method 700 may begin at step 702, which may involve measuring multiple resistances of heating lamps within a reactor system (e.g., reactor system 200 or 300). In an example, controller 102 is configured and / or programmed to include or measure a known amount of electrical power directed to each heating lamp, and to determine the resistance of each individual heating lamp 120 based on the known amount of electrical power and the measured current of the heating lamp (provided by each sensor). In an example, controller 102 is programmed to use the mathematical equation P=I 2 R determines the resistance of each individual heating lamp, where "P" equals electrical power (watts), "I" equals current (amperes), and "R" is resistance (ohms). Power can be the power supplied to the heating lamps to achieve the desired temperature measured and controlled using one or more pyrometers 208, 210, 308, and 310. Configured in this way, controller 102 is programmed to determine the resistance associated with each individual heating lamp. In this example, the resistance value may be stored in the memory 112 of controller 102 or otherwise recorded. In this example, controller 102 may base the measured resistance on either depressurized baseline power or atmospheric pressure baseline power based on which reactor system is being used.

[0072] Resistance can be measured at the beginning or end of each process and / or at periodic intervals and / or before and / or after the process. In the example, for the purpose of determining the resistance value of each heating lamp under known or consistent operating or heating conditions during a semiconductor manufacturing process (i.e., for consistency purposes), controller 102 is programmed by a user, etc., to determine the heating lamp resistance under the same or similar determined operating or heating conditions during each subsequent semiconductor manufacturing process. The specific operating conditions determined for this heating lamp resistance determination can vary based on many factors, such as user preferences related to the semiconductor manufacturing process (e.g., preferences related to the yield of one or more substrates, etc.), the specific type of semiconductor manufacturing process and its different operating conditions, and / or the type of heating lamp or other lamp to be measured.

[0073] When the reactor is not very busy, such as during reactor cleaning or etching, for example after a deposition process, it may be advantageous to measure multiple resistances. In the example, depending on the specific name given to the different operating cycles, the desired consistent operating cycle for determining the heating lamp resistance could be during a period that might be referred to as "pre-idle formulation." While the specific operating cycle chosen for determining the heating lamp resistance may vary, it should be understood that a characteristic of such a cycle is that it is identical for each subsequent heating lamp resistance determination, with the aim of providing consistent heating lamp operating conditions each time so that each subsequent heating lamp resistance determination is performed under the same operating conditions.

[0074] During step 702, a constant, predetermined power can be supplied to each lamp. A sensor, such as sensor 502, can be used, for example, to measure and calculate the average, mean, or median resistance of each lamp. In this example, multiple resistances are measured after the etching process in the semiconductor manufacturing process and before the pre-coating process.

[0075] At step 704, the controller may perform N comparisons between the previous resistor and the current resistor. In the example, N may refer to a real number, which may be customized by the user and stored in the memory 112 of the controller 102, and is further described below.

[0076] At step 706, controller 102 can determine whether the difference between each N comparison of the previous resistor and the current resistor exceeds a threshold. If the difference exceeds the threshold, method 700 can proceed to step 708. If the difference does not exceed the threshold, method 700 can return to step 702.

[0077] In the example, a threshold is determined and entered, stored, or otherwise recorded for controller access (e.g., entered via user interface 108 and stored in memory 112). The threshold can vary based on factors such as the specific type of heating lamp being used and / or the specific position of the heating lamp relative to the reactor. In the example, the threshold can be configured based on user preferences, depending on how conservative or aggressive the user desires regarding determining when to trigger the termination process. The user might prefer to be more conservative in triggering the termination process, so as to replace the heating lamp as soon as possible, rather than more aggressive in triggering the termination process, so as to maximize the lifespan / use of the heating lamp. In the example, the threshold is 0.5 ohms, representing a more conservative threshold. In another example, the threshold is 1 ohm, representing a more aggressive threshold. In yet another example, the threshold is between 0.5 ohms and 2 ohms. Different thresholds (e.g., thresholds between 0.5 ohms and 1.5 ohms, thresholds between 0.5 ohms and 1 ohm, etc.) can be configured without departing from the scope of this disclosure.

[0078] At step 708, controller 102 may trigger a halt process based on the difference between each of N consecutive comparisons of the previous and current resistors exceeding a threshold. This can indicate, for example, that the heating lamp is approaching an inefficient operating state that is nearing or nearing the end of its effective lifespan.

[0079] In the example, the value of N is determined and entered, stored, or otherwise recorded for controller access (e.g., entered via user interface 108 and stored in memory 112). In the example, for N=2, two consecutive comparisons are performed; in this case, method 700 can be similar to the reference. Figure 6Method 600 is described. The value of N can be configured based on user preferences, which can depend on how conservative or aggressive the user desires regarding determining when to trigger the abort process (similar to configuring the threshold described in step 706). In the example, setting N=2 represents a more conservative approach to determining when to trigger the abort process. In another example, setting N=5 represents a more aggressive approach to determining when to trigger the abort process.

[0080] In step 710, controller 102 can pause the semiconductor manufacturing process by generating one or more instructions stored, for example, in memory 112 and executed by processor 104. In this way, controller 102 can advantageously prevent the semiconductor manufacturing process from continuing with potentially defective heating lamps, which could lead to poor quality associated with substrate production.

[0081] For further reference Figure 8 An exemplary graphical user interface (GUI) is illustrated. In the example, the GUI (using, for example, user interface 108 and controlled by controller 102) can be displayed or output based on a termination process triggered by controller 102 (e.g., displayed as part of an action performed at step 612 or step 708). In the example, the GUI can be configured to display information such as the time of day when the termination process was triggered, an indication of a heating lamp that needs to be replaced, a resistance drop threshold (e.g., the threshold described at steps 608-610 or step 706), one or more resistance drops that triggered the termination process, and / or other similar information.

[0082] Although several example systems and methods for determining when an interruption process is triggered during a semiconductor manufacturing process have been disclosed in detail above, those skilled in the art will readily appreciate that many modifications can be made to the example embodiments without substantially departing from the intent and purpose of the example systems and methods disclosed herein. For example, as stated above, the systems and methods disclosed herein can be used not only to monitor the health or condition of heating lamps but also to monitor the health or condition of other lamps used during a semiconductor manufacturing process. Furthermore, while specific methods or approaches for providing a user with a visual or auditory indication of when an interruption process is determined to be triggered are described in the systems and methods disclosed herein, the systems and methods disclosed herein can be configured to provide such indications via other technologies, such as providing a user with a text message alert or other types of signaling through the use of wireless or cellular communication devices. Therefore, all such modifications to the systems and methods for determining when an interruption process is triggered during a semiconductor manufacturing process are intended to be included within the scope of this disclosure as defined in the following claims.

Claims

1. A system comprising: A reaction chamber, comprising a base disposed within the reaction chamber; A heating lamp is disposed outside the reaction chamber and optically coupled to the base through the wall of the reaction chamber; as well as A controller for determining when to trigger an abort process during a semiconductor manufacturing process, wherein the controller is configured to: Measure multiple resistances of the heating lamp over a period of time; A first resistance among a plurality of measured resistances is compared with a second resistance among a plurality of measured resistances to determine whether the difference between the first resistance and the second resistance exceeds a threshold, wherein the first resistance is measured before the second resistance; The second resistor is compared with a third resistor among a plurality of measured resistors to determine whether the difference between the second resistor and the third resistor exceeds the threshold, wherein the second resistor is measured before the third resistor; The termination process is triggered based on the following: The difference between the first resistor and the second resistor exceeds the threshold; and The difference between the second resistor and the third resistor exceeds the threshold; and Based on triggering the abort process, one or more instructions are generated to suspend the semiconductor manufacturing process.

2. The system according to claim 1, wherein, The threshold is between 0.5 ohms and 2 ohms.

3. The system according to claim 1, wherein, The measurements of the plurality of resistors are performed after the etching process and before the pre-coating process in the semiconductor manufacturing process.

4. The system according to claim 1, wherein, The controller is also configured to: Based on the termination process being triggered, the user interface is controlled to display an indication that the termination process has been triggered.

5. The system according to claim 1, wherein, The system further includes a plurality of heating lamps disposed outside the reaction chamber and optically coupled to the base through the wall of the reaction chamber, wherein the controller is further configured to determine when to trigger the termination process of each of the plurality of heating lamps.

6. The system according to claim 1, further comprising: A sensor that determines the current of the heating lamp, and wherein the controller measures multiple resistors based on the current of the heating lamp determined by the sensor and the amount of electrical power used to supply power to the heating lamp.

7. The system according to claim 6, wherein, The amount of electrical power is determined using one or more pyrometers.

8. A system comprising: A reaction chamber, comprising a base disposed within the reaction chamber; A heating lamp is disposed outside the reaction chamber and optically coupled to the base through the wall of the reaction chamber; as well as A controller for determining when to trigger an abort process during a semiconductor manufacturing process, wherein the controller is configured to: Measure multiple resistances of the heating lamp over a period of time; The previous resistance among the multiple resistors being measured is compared with the current resistance among the multiple resistors being measured N times in order to determine whether the difference between each comparison of the previous resistance and the current resistance exceeds a threshold. The abort process is triggered based on the difference between each of the N consecutive comparisons between the previous resistor and the current resistor exceeding the threshold; and Based on triggering the abort process, one or more instructions are generated to suspend the semiconductor manufacturing process.

9. The system according to claim 8, wherein, The threshold is between 0.5 ohms and 2 ohms.

10. The system according to claim 8, wherein, The measurements of the plurality of resistors are performed after the etching process and before the pre-coating process in the semiconductor manufacturing process.

11. The system according to claim 8, wherein, The controller is also configured to: Based on the termination process being triggered, the user interface is controlled to display an indication that the termination process has been triggered.

12. The system according to claim 8, wherein, The system further includes a plurality of heating lamps disposed outside the reaction chamber and optically coupled to the base through the wall of the reaction chamber, wherein the controller is further configured to determine when to trigger the termination process of each of the plurality of heating lamps.

13. The system according to claim 8, further comprising: A sensor that determines the current of the heating lamp, and wherein the controller measures multiple resistors based on the current of the heating lamp determined by the sensor and the amount of electrical power used to supply power to the heating lamp.

14. The system according to claim 13, wherein, One or more pyrometers are used to control the amount of electrical power.

15. A controller for determining when to trigger an abort process during a semiconductor manufacturing process, comprising: One or more processors; as well as A memory storing computer-executable instructions that, when executed by the one or more processors, cause the controller to perform the following operations at a reaction chamber, the reaction chamber including a base disposed within the reaction chamber and a heating lamp disposed outside the reaction chamber and optically coupled to the base through the wall of the reaction chamber: Measure multiple resistances of the heating lamp over a period of time; A first resistance among a plurality of measured resistances is compared with a second resistance among a plurality of measured resistances to determine whether the difference between the first resistance and the second resistance exceeds a threshold, wherein the first resistance is measured before the second resistance; The second resistor is compared with a third resistor among a plurality of measured resistors to determine whether the difference between the second resistor and the third resistor exceeds the threshold, wherein the second resistor is measured before the third resistor; The termination process is triggered based on the following: The difference between the first resistor and the second resistor exceeds the threshold; and The difference between the second resistor and the third resistor exceeds the threshold; and Based on triggering the abort process, one or more instructions are generated to suspend the semiconductor manufacturing process.

16. The controller according to claim 15, wherein, The threshold is between 0.5 ohms and 2 ohms.

17. The controller according to claim 15, wherein, The measurements of the plurality of resistors are performed after the etching process and before the pre-coating process in the semiconductor manufacturing process.

18. The controller according to claim 15, wherein, The memory stores computer-executable instructions, which, when executed by the one or more processors, further cause the controller to: Based on the termination process being triggered, the user interface is controlled to display an indication that the termination process has been triggered.

19. The controller of claim 15, further comprising a plurality of heating lamps disposed outside the reaction chamber and optically coupled to the base through the wall of the reaction chamber, wherein, The memory stores computer-executable instructions, which, when executed by the one or more processors, further cause the controller to: Determine when to trigger the stop process for each of the plurality of heating lamps.

20. The controller of claim 15, further comprising: A sensor that determines the current of the heating lamp, and wherein the controller measures the plurality of resistors based on the current of the heating lamp determined by the sensor and the amount of electrical power used to supply power to the heating lamp.

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