Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method for improving yield of products are provided. The substrate processing apparatus includes a control unit that cooperates with a memory to perform the following controls: (1) immersing a substrate in a processing liquid stored in a processing tank, (2) making a chamber an organic solvent gas atmosphere, (3) supplying the organic solvent gas to a region including a contact position of a lifter and the substrate in a state where the substrate is lifted from the processing tank, and (4) supplying the organic solvent gas to the region including the contact position of the lifter and the substrate in a state where the chamber is depressurized and continuing the supply for a predetermined time.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Batch substrate processing apparatuses that process multiple substrates at once are known. For example, the substrate processing apparatus described in Patent Document 1 performs a cleaning process by immersing the substrates held in a lifter in pure water stored in a processing tank for cleaning. After the cleaning process, the substrate processing apparatus performs a drying process by drying the substrates using a drying gas.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-273819 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] Furthermore, it is known that unique particles adhere to the area near the support plate of the lifting device in the dried substrate. In recent years, with the continuous miniaturization of semiconductor devices, the width of edge exclusion regions has gradually narrowed. Under these circumstances, it is believed that these unique particles adhering to the area near the support plate of the substrate have a direct impact on the product yield, and therefore it is necessary to reduce their occurrence.

[0008] The purpose of one aspect of this invention is to improve the yield of the product.

[0009] Solution for solving the problem

[0010] To address the aforementioned issues, the substrate processing apparatus of the present invention performs a predetermined processing on a substrate, comprising: a processing tank storing a processing liquid; a chamber housing the processing tank; a lifter holding the substrate; a moving mechanism that moves the lifter up and down between a first position in which the substrate is immersed in the processing liquid in the processing tank and a second position in which the substrate is located outside the processing tank; a processing liquid nozzle supplying processing liquid to the processing tank; a gas nozzle supplying inactive gas or organic solvent gas to the chamber; and a control unit that controls the operation of the moving mechanism and controls the supply of processing liquid by the processing liquid nozzle and the supply of inactive gas by the gas nozzle. The gas supply operation and the organic solvent gas supply operation performed by the gas nozzle; and the memory, which stores information representing the control operation of the control unit, wherein the control unit cooperates with the memory to perform the following control: (1) immersing the substrate in the processing liquid stored in the processing tank, (2) making the chamber an organic solvent gas atmosphere, (3) supplying the organic solvent gas to the area including the contact position between the lifter and the substrate while the substrate is lifted from the processing tank, and (4) supplying the organic solvent gas to the area including the contact position between the lifter and the substrate while the chamber is depressurized, and continuing the supply for a predetermined time.

[0011] To solve the above-mentioned problems, the substrate processing method of the present invention is a substrate processing apparatus for performing a predetermined processing on a substrate, wherein the substrate processing apparatus comprises: a processing tank for storing a processing liquid; a chamber for housing the processing tank; a lifter for holding the substrate; a moving mechanism for moving the lifter up and down between a first position in which the substrate is immersed in the processing liquid in the processing tank and a second position in which the substrate is located outside the processing tank; a processing liquid nozzle for supplying processing liquid to the processing tank; and a gas nozzle for supplying an inactive gas or an organic solvent gas to the chamber. In this substrate processing method, (1) the substrate is immersed in the processing liquid stored in the processing tank; (2) the chamber is made into an atmosphere of the organic solvent gas; (3) while the substrate is lifted from the processing tank, the organic solvent gas is supplied to a region including the contact position between the lifter and the substrate; and (4) after the chamber is depressurized, the organic solvent gas is supplied to the region including the contact position between the lifter and the substrate, and the supply is continued for a predetermined time.

[0012] Invention Effects

[0013] According to one aspect of the present invention, the yield of the product can be improved. Attached Figure Description

[0014] Figure 1 This is a schematic diagram illustrating an example of the general structure of a substrate processing apparatus.

[0015] Figure 2 This is a block diagram showing the structure of the substrate processing device.

[0016] Figure 3 It is a schematic three-dimensional diagram showing the structure of the elevator.

[0017] Figure 4 This is a general front view of the elevator.

[0018] Figure 5 This diagram illustrates an example of a substrate processing method performed by a substrate processing apparatus.

[0019] Figure 6 This is a schematic diagram used to illustrate one reason why unique particles adhere to the substrate.

[0020] Symbol Explanation

[0021] 1—Cavity, 3—Processing tank, 5—Lifter, 5A—First position, 5B—Second position, 6—Moving mechanism, 11—Processing liquid nozzle, 12—Gas nozzle (inactive gas nozzle, organic solvent nozzle), 13—Gas nozzle, 31—Processor (control unit), 32—Memory, 100—Substrate processing device, C1—Center. Detailed Implementation

[0022] [Implementation Method 1]

[0023] Hereinafter, one embodiment of the present invention will be described in detail.

[0024] [Overview of the substrate processing apparatus]

[0025] Reference Figure 1 and Figure 2 An example of the general structure of the substrate processing apparatus 100 will be described. Figure 1 This is a schematic diagram showing an example of the general structure of the substrate processing apparatus 100. Figure 2 This is a block diagram showing the structure of the substrate processing apparatus 100. The substrate processing apparatus 100 is an apparatus for performing predetermined processing on a substrate. The substrate processing apparatus 100 uses processing liquids and processing gases to perform various processing on the substrate W. The substrate W is, for example, a semiconductor substrate such as a silicon wafer. The substrate processing apparatus 100 includes a chamber 1, a processing tank 3, a lifting device 5, and a moving mechanism 6 (see reference). Figure 2 ), processing liquid nozzle 11 and gas nozzles 12 and 13.

[0026] like Figure 1As shown, chamber 1 houses processing tank 3. An opening / closing cover 2 is provided above chamber 1 to open and close an opening formed in the upper part of chamber 1. The opening / closing cover 2 is movable between a closed position 2A that blocks the opening formed in the upper part of chamber 1 and an open position 2B that opens the opening.

[0027] Treatment tank 3 stores the treatment solution. The treatment solution is not particularly limited; examples include chemical solutions and pure water. Pure water examples include ultrapure water (DIW: De-ionized Water). Chemical solutions examples include ammonia-hydrogen peroxide-water mixture (SC-1), hydrochloric acid-hydrogen peroxide mixture (SC-2), hydrogen fluoride (HF), isopropanol (IPA), and tetramethylammonium hydroxide (TMAH).

[0028] A treatment fluid nozzle 11 connected to a treatment fluid supply pipe 21 is provided in the treatment tank 3. The treatment fluid nozzle 11 supplies treatment fluid to the treatment tank 3. More specifically, from the treatment fluid supply section 20 (see reference 20)... Figure 2 Processing liquid is supplied to processing liquid nozzle 11 via processing liquid supply pipe 21. The substrate W, which is raised and lowered by lifting device 5, is immersed in the processing liquid stored in processing tank 3.

[0029] A discharge port 4 is formed at the lower part of the processing tank 3 for discharging the processing liquid inside the processing tank 3 to the outside of the processing tank 3. The discharge port 4 is connected to a discharge pipe 7 equipped with an on / off valve 41. When the on / off valve 41 is in the open state, the processing liquid inside the processing tank 3 is discharged to the bottom of the chamber 1 through the discharge pipe 7; when the on / off valve 41 is in the closed state, it is not discharged to the bottom of the chamber 1 through the discharge pipe 7. A drain pipe 9 is connected to the bottom of the chamber 1. When the on / off valve (not shown) is in the open state, the liquid stored at the bottom of the chamber 1 is discharged to the outside of the chamber 1 through the drain pipe 9.

[0030] The lifter 5 holds the substrate W. More specifically, the lifter 5 supports the outer peripheral end of the substrate W and holds the plurality of substrates W in an upright position, arranged in a manner normal to the substrate surface. The lifter 5 is raised and lowered relative to the chamber 1 by the moving mechanism 6 described later.

[0031] The lifting device 5 can move to a first position 5A, a second position 5B, and a third position 5C. The first position 5A is a position where the substrate W supported by the lifting device 5 is immersed in the processing liquid within the processing tank 3. The second position 5B is a position where the substrate W supported by the lifting device 5 is located outside the processing tank 3. Furthermore, in this embodiment, the second position 5B is a position where the substrate W supported by the lifting device 5 is located inside the chamber 1. The second position 5B is located above the first position 5A inside the chamber 1. The third position 5C is a position where the substrate W supported by the lifting device 5 is located outside the chamber 1.

[0032] An exhaust pipe 25 is connected to chamber 1. The exhaust pipe 25 is connected to a pressure-reducing mechanism 26 that reduces pressure within chamber 1 (see reference). Figure 2 )connect.

[0033] Gas nozzle 12 and gas nozzle 13 are provided in chamber 1. Gas nozzle 12 and gas nozzle 13 are nozzles for supplying organic solvent gas or inert gas to chamber 1. That is, gas nozzle 12 and gas nozzle 13 respectively function as gas nozzles for supplying inert gas to chamber 1 and gas nozzles for supplying organic solvent gas to chamber 1. Gas nozzle 12 and gas nozzle 13 are respectively connected to gas supply pipe 22.

[0034] Gas nozzles 12 and 13 are respectively disposed on the upper part of chamber 1. In this embodiment, gas nozzle 12 supplies organic solvent gas or inactive gas to the region including the contact position between the lifting device 5 located at the second position 5B and the substrate W. Gas nozzle 12 is disposed at a position lower than the height of the center C1 of the substrate W held by the lifting device 5 located at the second position 5B.

[0035] Although details will be described later, the substrate W is held in the lifter 5 by being placed on the side holding arm 60 and the central holding arm 70. That is, the contact position between the lifter 5 and the substrate W is at a position lower than the height of the center C1 of the substrate W at the outer edge of the substrate W. In contrast, as described above, the gas nozzle 12 is positioned lower than the height of the center C1 of the substrate W held by the lifter 5 at the second position 5B. In other words, it is configured such that there is no substrate surface of the substrate W between the contact position between the lifter 5 and the substrate W and the gas nozzle 12. As a result, the organic solvent gas or inactive gas ejected from the gas nozzle 12 reaches the contact position between the lifter 5 and the substrate W directly without passing through the substrate surface of the substrate W. Therefore, it is possible to efficiently blow organic solvent gas or inactive gas to the contact position between the lifter 5 and the substrate W.

[0036] Furthermore, the gas nozzle 12 is preferably positioned higher than the height of the central retaining arm 70 of the lifter 5 located at the second position 5B. In this case, the gas nozzle 12 is positioned closer to the side retaining arm 60, thus enabling more efficient blowing of organic solvent gas or inactive gas to the contact position between the lifter 5 and the substrate W.

[0037] Gas nozzle 13 is positioned above gas nozzle 12. Vertically, gas nozzle 13 is positioned above the upper end of the substrate W held by the lifter 5 at the second position 5B. In this embodiment, gas nozzle 13 emits organic solvent gas or inactive gas towards the upper part of chamber 1, i.e., in the direction of the opening / closing cover 2. That is, the purpose of gas nozzle 13 is to ensure that organic solvent gas or inactive gas permeates the entire interior of chamber 1.

[0038] An on / off valve 42 and an on / off valve 43 are provided in the gas supply pipe 22. More specifically, the on / off valve 42 is provided in the gas supply pipe 22 connected to the gas nozzle 12. When the on / off valve 42 is in the open state, organic solvent gas or inactive gas is discharged from the gas nozzle 12 into the chamber 1; when the on / off valve 42 is in the closed state, organic solvent gas or inactive gas is not discharged from the gas nozzle 12 into the chamber 1. The on / off valve 43 is provided in the gas supply pipe 22 connected to the gas nozzle 13. When the on / off valve 43 is in the open state, organic solvent gas or inactive gas is discharged from the gas nozzle 13 into the chamber 1; when the on / off valve 43 is in the closed state, organic solvent gas or inactive gas is not discharged from the gas nozzle 13 into the chamber 1.

[0039] like Figure 2 As shown, the substrate processing apparatus 100 includes a moving mechanism 6 and a controller 30. In this embodiment, the substrate processing apparatus 100 may also include a processing liquid supply unit 20, a pressure reducing mechanism 26, an organic solvent supply unit 28, and a gas supply unit 29.

[0040] The moving mechanism 6 is a mechanism that moves the lifting device 5 vertically between the first position 5A and the second position 5B. In this embodiment, the moving mechanism 6 further moves the lifting device 5 vertically between the second position 5B and the third position 5C, and between the third position 5C and the first position 5A. The moving mechanism 6 includes a drive motor (not shown), and the lifting device 5 is moved vertically by the driving force from the drive motor.

[0041] The processing fluid supply unit 20 supplies processing fluid to the processing fluid nozzle 11. When the drive unit (not shown) is activated, the processing fluid supply unit 20 supplies processing fluid from a storage tank (not shown) to the processing fluid supply pipe 21. An on / off valve (not shown) is provided on the processing fluid supply pipe 21. When the valve is open, the processing fluid supplied from the processing fluid supply pipe 21 is ejected from the processing fluid nozzle 11.

[0042] Pressure reducing mechanism 26 reduces the pressure inside chamber 1. Pressure reducing mechanism 26 includes, for example, an exhaust pump (not shown) and an exhaust valve (not shown). For example, the exhaust valve is located in exhaust pipe 25. When the exhaust pump is driven while the exhaust valve is open, gas inside chamber 1 is discharged to the outside of chamber 1 via exhaust pipe 25. Pressure reducing mechanism 26 exhausts gas from chamber 1 via exhaust pipe 25, thereby reducing the pressure inside chamber 1.

[0043] The organic solvent supply unit 28 supplies organic solvent vapor, which is an organic solvent gas, into the chamber 1 via the gas supply pipe 22 from the gas nozzle 12 or the gas nozzle 13. The organic solvent supply unit 28 includes, for example, an organic solvent tank (not shown), an organic solvent vapor supply pipe (not shown), and a vapor on / off valve (not shown). The organic solvent tank is a tank that stores organic solvent and generates organic solvent vapor. The organic solvent vapor supply pipe is connected to the gas supply pipe 22. The vapor on / off valve is provided on the organic solvent vapor supply pipe. When the vapor on / off valve is open, organic solvent vapor is supplied from the organic solvent vapor supply pipe to the gas supply pipe 22. Examples of organic solvents supplied from the organic solvent supply unit 28 include liquids containing at least one of isopropanol (IPA), hydrofluoroether (HFE), methanol, ethanol, acetone, and trans-1,2-dichloroethylene.

[0044] For example, when the on / off valve 42 and / or the on / off valve 43 are in the open state, when the pressure in the chamber 1 is reduced by the pressure reducing mechanism 26, the organic solvent vapor generated by the organic solvent tank is supplied to the organic solvent vapor supply pipe and the gas supply pipe 22. The gas nozzle 12 and / or the gas nozzle 13 discharge the organic solvent vapor supplied through the gas supply pipe 22 into the chamber 1.

[0045] The gas supply unit 29 supplies inert gas into the chamber 1 from the gas nozzle 12 or the gas nozzle 13 via the gas supply pipe 22. For example, when the drive unit (not shown) is activated, the gas supply unit 29 supplies inert gas from an inert gas container (not shown) to the gas supply pipe 22. The gas supply unit 29 may also include a gas on / off valve provided on the inert gas supply pipe (not shown) connected to the gas supply pipe 22. When the gas on / off valve is open, inert gas is supplied from the inert gas supply pipe to the gas supply pipe 22. Examples of inert gases supplied by the gas supply unit 29 include nitrogen (N2) and argon (Ar).

[0046] For example, when the on / off valve 42 and / or the on / off valve 43 are in the open state, when the gas supply unit 29 is activated, the inactive gas contained in the inactive gas tank is supplied to the inactive gas supply pipe and the gas supply pipe 22. The gas nozzle 12 and / or the gas nozzle 13 discharge the inactive gas supplied through the gas supply pipe 22 into the chamber 1.

[0047] The controller 30 controls the various components included in the board processing device 100. The controller 30 includes a processor 31 and a memory 32. The processor 31 is an example of a control unit.

[0048] The processor 31 and memory 32 cooperate to perform various processes. The memory 32 stores information representing the control actions of the processor 31. The processor 31 executes the various processes described later, for example, according to a program stored in the memory 32 that represents the control actions of the processor 31. The processor 31 may include, for example, a CPU (Central Processing Unit), a DSP (Digital Signal Processor), a GPU (Graphics Processing Unit), and an MPU (Micro Processing Unit). The memory 32 may include, for example, ROM (Read Only Memory), RAM (Random Access Memory), flash memory, and HDD (Hard Disk Drive).

[0049] The processor 31 controls the operation of the moving mechanism 6. Additionally, the processor 31 controls the supply of processing liquid to the processing liquid by the processing liquid nozzle 11, the supply of inactive gas by the gas nozzles 12 and 13, and the supply of organic solvent gas by the gas nozzles 12 and 13. More specifically, when controlling the supply of processing liquid to the processing liquid by the processing liquid nozzle 11, the processor 31 controls the processing liquid supply unit 20. Furthermore, when controlling the supply of inactive gas by the gas nozzles 12 and 13, the processor 31 controls the pressure reducing mechanism 26, the gas supply unit 29, and the on / off valves 42 and 43. Furthermore, when controlling the supply of organic solvent gas by the gas nozzles 12 and 13, the processor 31 controls at least one of the pressure reducing mechanism 26, the organic solvent supply unit 28, and the on / off valves 42 and 43. In this embodiment, the processor 31 also controls the on / off valve 41.

[0050] [Structure of the elevator]

[0051] Next, refer to Figure 3 and Figure 4 The detailed structure of the elevator 5 will be explained. Figure 3 This is a schematic three-dimensional diagram showing the structure of the elevator 5. Figure 4 This is a schematic front view of the elevator 5. Furthermore, in the following description, as... Figure 3 The XYZ coordinate system is defined as shown in the figure. The X-axis is horizontal. The Y-axis is vertical, with the positive Y-axis pointing upwards and the negative Y-axis pointing downwards. The Z-axis is horizontal and orthogonal to the X-axis. The XZ plane is a horizontal plane.

[0052] like Figure 3 and Figure 4As shown, the lift 5 has at least a fixed arm 51 and a side retaining arm 60. In this embodiment, the lift 5 also has a connecting arm 52 and a central retaining arm 70.

[0053] The fixed arm 51 holds the side holding arm 60. In this embodiment, the fixed arm 51 also holds the central holding arm 70. The fixed arm 51 is a rectangular component extending along the Y-axis direction. More specifically, the fixed arm 51 is a plate-shaped component with the Y-axis as its long side and the X-axis as its short side. The thickness direction of the fixed arm 51 is the Z-axis direction. When the moving mechanism 6 is driven, the fixed arm 51 moves in the vertical direction. Along with the vertical movement of the fixed arm 51, the side holding arm 60 and the central holding arm 70 held by the fixed arm 51 also move in the vertical direction.

[0054] Here, in Figure 4 The diagram shows an imaginary plane S1. Additionally, in... Figure 4 The outer periphery of the base plate W held in the lifting device 5 is represented by a single-dotted line. Plane S1 is a plane including a line passing through the center C1, and its normal direction is horizontal. Plane S1 is located at the center position of the fixed arm 51 in the X-axis direction. In this embodiment, the normal direction of plane S1 is the X-axis direction, and plane S1 is the YZ plane. Furthermore, one end of the fixed arm 51 in the X-axis direction is designated as the first end 51A. The end opposite to the first end 51A in the X-axis direction is designated as the second end 51B. In this embodiment, plane S1 is located at the center position between the first end 51A and the second end 51B in the X-axis direction.

[0055] Connecting arm 52 is a component that connects the side retaining arm 60 and the central retaining arm 70. Connecting arm 52 extends along the X-axis direction, i.e., with the X-axis direction as its long side. Connecting arm 52 has a centrally recessed shape in the X-axis direction. When viewed from the Z-axis direction, connecting arm 52 is a V-shaped component. The position of connecting arm 52 corresponding to plane S1 is located at the bottom.

[0056] A side retaining arm 60 holds the substrate W. The side retaining arm 60 includes a first side retaining arm 60A and a second side retaining arm 60B. Relative to plane S1, the first side retaining arm 60A is disposed on one side of plane S1, and the second side retaining arm 60B is disposed on the other side of plane S1. That is, in the X-axis direction, the first side retaining arm 60A is located on the side closer to the first end 51A of plane S1, and the second side retaining arm 60B is located on the side closer to the second end 51B of plane S1.

[0057] In this embodiment, a first lateral retaining arm 60A is disposed at the first end 51A of the fixed arm 51, and a second lateral retaining arm 60B is disposed at the second end 51B of the fixed arm 51. In the X-axis direction, the first lateral retaining arm 60A is located on the first end 51A side relative to the central retaining arm 70, and the second lateral retaining arm 60B is located on the second end 51B side relative to the central retaining arm 70. Furthermore, in this specification, the first lateral retaining arm 60A and the second lateral retaining arm 60B are simply referred to as "lateral retaining arm 60" without distinction.

[0058] like Figure 3 and Figure 4 As shown, the side retaining arm 60 has a retaining body 61, an inner support plate 62, an outer support plate 63, a bolt 64, and a nut 65.

[0059] like Figure 3 As shown, the retaining body 61 is a rod-shaped component with the Z-axis as its long side. One end of the retaining body 61 in the Z-axis direction is fixed to the lower part of the fixing arm 51, and the other end of the retaining body 61 in the Z-axis direction is fixed to the connecting arm 52. In this embodiment, the retaining body 61 of the first lateral retaining arm 60A is adjacent to the first end 51A of the fixing arm 51 and is fixed to the lower part of the fixing arm 51. In addition, the retaining body 61 of the second lateral retaining arm 60B is adjacent to the second end 51B of the fixing arm 51 and is fixed to the lower part of the fixing arm 51.

[0060] The retaining body 61 has a fixing hole (not shown) formed on its side. A bolt 64 is inserted into the fixing hole of the retaining body 61. Figure 4 As shown, the main body 61 is positioned between the inner support plate 62 and the outer support plate 63 in the X-axis direction.

[0061] An inner support plate 62 is disposed on the side of the retaining body 61 closest to plane S1. That is, the inner support plate 62 is located on the side closer to plane S1 than the retaining body 61 in the X-axis direction. When separated from the fixing arm 51 and connecting arm 52, the inner support plate 62 is fixed to the retaining body 61 by bolts 64 and nuts 65. The inner support plate 62 has fixing holes (not shown) formed on its side. Bolts 64 are inserted into the fixing holes of the inner support plate 62. Figure 3 As shown, a groove portion 622 is formed at the end of the inner support plate 62 in the positive direction of the Y-axis, with multiple grooves arranged in the Z-axis direction. The groove portion 622 is comb-shaped. The substrate W is fitted into the groove of the groove portion 622.

[0062] like Figure 4As shown, the outer support plate 63 is disposed on the side of the retaining body 61 away from plane S1. That is, the retaining body 61 is located on the side closer to plane S1 than the outer support plate 63 in the X-axis direction. The outer support plate 63 is fixed to the retaining body 61 by bolts 64 and nuts 65 when separated from the fixing arm 51 and connecting arm 52. The outer support plate 63 has fixing holes (not shown) formed on its side. Bolts 64 are inserted into the fixing holes of the outer support plate 63. Figure 3 As shown, a groove portion 632 is formed at the end of the outer support plate 63 in the positive direction of the Y-axis, with multiple grooves arranged in the Z-axis direction. The groove portion 632 is comb-shaped. The substrate W is fitted into the groove of the groove portion 632.

[0063] like Figure 4 As shown, the length of the outer support plate 63 in the Y-axis direction is longer than the length of the inner support plate 62 in the Y-axis direction. The position of the end of the outer support plate 63 on the positive Y-axis side is closer to the positive Y-axis side than the position of the end of the inner support plate 62 on the positive Y-axis side. That is, the position of the groove 632 of the outer support plate 63 is higher than the position of the groove 622 of the inner support plate 62 in the Y-axis direction.

[0064] Bolt 64 and nut 65 are components that secure the retaining body 61, the inner support plate 62, and the outer support plate 63. Specifically, the inner support plate 62 and the outer support plate 63 are respectively mounted to the retaining body 61 using bolt 64 and nut 65. By tightening the nut 65 to the bolt 64, the inner support plate 62 and the outer support plate 63 are fixed to the retaining body 61. In the X-axis direction, the head of bolt 64 is located on the inner support plate 62 side relative to the retaining body 61, and the nut 65 is positioned on the outer support plate 63 side relative to the retaining body 61. Alternatively, in the X-axis direction, the head of bolt 64 may be located on the outer support plate 63 side relative to the retaining body 61, and the nut 65 may be positioned on the inner support plate 62 side relative to the retaining body 61.

[0065] The lateral retaining arm 60 may have a washer 66. The washer 66 may be disposed between the inner support plate 62 and the head of the bolt 64. The washer 66 may also be disposed between the outer support plate 63 and the nut 65.

[0066] like Figure 4 As shown, the central holding arm 70 holds the outer periphery of the lowermost end of the substrate W held by the lifter 5 at a position including the plane S1. In this embodiment, the central holding arm 70 is located at the center between the first end 51A and the second end 51B of the fixed arm 51 in the X-axis direction. The central holding arm 70 has a central holding body 71, a first central support plate 72, a second central support plate 73, a central bolt 74, and a central nut 75.

[0067] like Figure 3 As shown, the central retaining body 71 is a rod-shaped component with the Z-axis as its long side. One end of the central retaining body 71 in the Z-axis direction is fixed to the lower part of the fixing arm 51, and the other end of the central retaining body 71 in the Z-axis direction is fixed to the connecting arm 52. The central retaining body 71 has a fixing hole (not shown) formed on its side. A central bolt 74 is inserted into the fixing hole of the central retaining body 71. Figure 4 As shown, the central retaining body 71 is located between the first central support plate 72 and the second central support plate 73 in the X-axis direction. That is, the central retaining body 71 is located at a position overlapping with plane S1.

[0068] A first central support plate 72 is disposed on one side of the central retaining body 71. In this embodiment, the first central support plate 72 is located in the X-axis direction on the side closer to the second end 51B of the fixing arm 51 than the central retaining body 71. A fixing hole (not shown) is formed on the side of the first central support plate 72. A central bolt 74 is inserted into the fixing hole of the first central support plate 72. When the first central support plate 72 is separated from the fixing arm 51 and the connecting arm 52, it is fixed to the central retaining body 71 by the central bolt 74 and the central nut 75.

[0069] The second central support plate 73 is disposed on the other side of the central retaining body 71. In this embodiment, the second central support plate 73 is located in the X-axis direction on the side closer to the first end 51A of the fixing arm 51 than the central retaining body 71. The second central support plate 73 has a fixing hole (not shown) formed on its side. A central bolt 74 is inserted into the fixing hole of the second central support plate 73. When the second central support plate 73 is separated from the fixing arm 51 and the connecting arm 52, it is fixed to the central retaining body 71 by the central bolt 74 and the central nut 75.

[0070] Grooves 722 and 732, which have multiple grooves arranged in the Z-axis direction, are formed at the positive Y-axis ends of the first central support plate 72 and the second central support plate 73, respectively. The grooves 722 and 732 are comb-shaped. The substrate W is fitted into the grooves 722 and 732. The length of the first central support plate 72 in the Y-axis direction and the length of the second central support plate 73 in the Y-axis direction are substantially the same. Therefore, in the Y-axis direction, the position of the positive Y-axis end of the first central support plate 72 is substantially the same as the position of the positive Y-axis end of the second central support plate 73. That is, in the Y-axis direction, the position of the groove 722 of the first central support plate 72 and the position of the groove 732 of the second central support plate 73 are substantially the same.

[0071] The central bolt 74 and central nut 75 are components that secure the central retaining body 71, the first central support plate 72, and the second central support plate 73. Specifically, the first central support plate 72 and the second central support plate 73 are respectively mounted to the central retaining body 71 via the central bolt 74 and the central nut 75. By tightening the central nut 75 to the central bolt 74, the first central support plate 72 and the second central support plate 73 are thus fixed to the central retaining body 71. In the X-axis direction, the head of the central bolt 74 is located at the second end 51B side relative to the central retaining body 71, and the central nut 75 is disposed at the first end 51A side relative to the central retaining body 71. Alternatively, in the X-axis direction, the head of the central bolt 74 may be located at the first end 51A side relative to the central retaining body 71, and the central nut 75 may be disposed at the second end 51B side relative to the central retaining body 71.

[0072] The central retaining arm 70 may have a central washer 76. The central washer 76 may be disposed between the head of the first central support plate 72 and the central bolt 74 and / or between the second central support plate 73 and the central nut 75.

[0073] [Substrate processing method]

[0074] Next, refer to Figure 5 An example of a substrate processing method performed by the substrate processing apparatus 100 will be described. Figure 5 This diagram illustrates an example of a substrate processing method performed by the substrate processing apparatus 100. Furthermore, in Figure 5 In this drawing, for ease of understanding, only the main structural components of the substrate processing apparatus 100 are shown, and illustrations of other structures are omitted. Furthermore, in Figure 5 In order to make the accompanying drawings easy to understand, symbols are sometimes used to mark a portion of the main parts of the substrate processing apparatus 100 shown in the drawings, while symbols are omitted for other main parts.

[0075] like Figure 5 As shown, in step S1, the substrate W is immersed in the processing liquid stored in the processing tank 3. In step S1, the processor 31 controls the on / off valve 41 to be closed and drives the processing liquid supply unit 20 for a predetermined time. As a result, the processing liquid nozzle 11 ejects the processing liquid supplied to the processing liquid supply pipe 21 into the processing tank 3, where the processing liquid is stored. In step S1, after the processing liquid is stored in the processing tank 3, the processor 31 controls the moving mechanism 6 to move the lifting device 5 holding the substrate W to the first position 5A. As a result, the substrate W is immersed in the processing liquid in the processing tank 3.

[0076] In step S1, after immersing the substrate W in the processing liquid, the processor 31 supplies inert gas into the chamber 1 using gas nozzles 12 and 13. More specifically, in step S1, the processor 31 controls the on / off valves 42 and 43 to be open, and drives the gas supply unit 29 for a predetermined time. Gas nozzles 12 and 13 discharge the inert gas supplied to the gas supply pipe 22 into the chamber 1, thereby filling the chamber 1 with inert gas. In step S1, after filling the chamber 1 with inert gas, the processor 31 drives the pressure reducing mechanism 26 for a predetermined time to discharge the gas in the chamber 1 to the outside. As a result, the pressure in the chamber 1 is reduced.

[0077] In step S2, a process is performed to create an organic solvent gas atmosphere in chamber 1. In step S2, processor 31 controls the supply of organic solvent gas to gas nozzle 13. More specifically, processor 31 drives organic solvent supply unit 28 for a predetermined time to supply organic solvent vapor as organic solvent gas to gas supply pipe 22. In step S2, processor 31 controls on / off valve 42 to be closed and on / off valve 43 to be open. Gas nozzle 13 discharges the organic solvent vapor supplied to gas supply pipe 22 into chamber 1, creating an organic solvent vapor atmosphere in chamber 1. In step S2, processor 31 drives pressure reducing mechanism 26 for a predetermined time to discharge gas from chamber 1 to the outside. Thus, the pressure inside chamber 1 is reduced.

[0078] In step S3, the substrate W is lifted from the processing tank 3. In step S3, the processor 31 controls the moving mechanism 6 to move the lifter 5 to the second position 5B. Thus, the substrate W is positioned outside the processing tank 3. In step S3, the processor 31 drives the organic solvent supply unit 28 for a predetermined time to supply organic solvent vapor to the gas supply pipe 22. In step S3, the processor 31 controls the on / off valve 42 to be closed and the on / off valve 43 to be open. The gas nozzle 13 discharges the organic solvent vapor supplied to the gas supply pipe 22 into the chamber 1, creating an organic solvent vapor atmosphere inside the chamber 1. In step S3, the processor 31 stops driving the pressure reducing mechanism 26.

[0079] In step S4, organic solvent gas is supplied to the region including the contact position between the lifting device 5 and the substrate W while the substrate W is lifted from the processing tank 3. In step S4, the processor 31 controls the moving mechanism 6 to continuously keep the lifting device 5 in the second position 5B. In step S4, the processor 31 drives the organic solvent supply unit 28 for a predetermined time. In addition, in step S4, the processor 31 controls the on / off valves 42 and 43 to be in the open state. As a result, the gas nozzles 12 and 13 supply organic solvent vapor into the chamber 1. That is, the gas nozzle 12 supplies organic solvent vapor to the region including the grooves 622 and 632 of the side holding arms 60 and the grooves 722 and 732 of the central holding arm 70.

[0080] In step S4, the processor 31 stops driving the pressure reducing mechanism 26. Additionally, in step S4, the processor 31 controls the on / off valve 41 to be open, and also controls the on / off valve located on the drain pipe 9 to be open. Thus, the processing liquid in the processing tank 3, after being discharged to the bottom of the chamber 1, is discharged to the outside of the chamber 1 via the drain pipe 9.

[0081] In step S5, the following process is performed: while the chamber 1 is depressurized, organic solvent gas is supplied to the area including the contact position between the lifter 5 and the substrate W, and this supply is continued for a predetermined time. In step S5, the processor 31 continuously supplies organic solvent vapor into the chamber 1 from gas nozzles 12 and 13 from step S4. In step S5, the processor 31 drives the depressurization mechanism 26 for a predetermined time to discharge the gas in the chamber 1 to the outside. This reduces the pressure inside the chamber 1. For example, in step S5, the processor 31 continues the supply of organic solvent vapor to the area including the contact position between the lifter 5 and the substrate W while the chamber 1 is depressurized for a range of 3 to 10 seconds. Additionally, the processor 31 continuously discharges the processing liquid in the processing tank 3 to the outside of the chamber 1 from step S4.

[0082] In step S6, the following process is performed: While the chamber 1 is depressurized, an inert gas, used as a drying gas, is supplied to the area including the contact position between the lifter 5 and the substrate W, and this supply is continued for a predetermined time. In step S6, the processor 31 drives the gas supply unit 29 for a predetermined time. Additionally, in step S6, the processor 31 controls the on / off valves 42 and 43 to be in the open state. Gas nozzles 12 and 13 discharge the inert gas supplied to the gas supply pipe 22 into the chamber 1, thereby drying the substrate W. Furthermore, in step S6, the processor 31 continues the process of depressurizing the pressure inside the chamber 1 from step S5. Steps S5 and S6 are processes for drying the substrate W.

[0083] In step S7, the pressure inside chamber 1 is brought to atmospheric pressure. In step S7, processor 31 drives gas supply unit 29. In step S7, processor 31 controls the on / off valves 42 and 43 to be open. As a result, inactive gas is supplied to chamber 1 from gas nozzles 12 and 13. In step S7, processor 31 stops driving pressure reducing mechanism 26. As a result, the pressure inside chamber 1 is brought to atmospheric pressure.

[0084] In step S8, the substrate W is moved out of the chamber 1. In step S8, the processor 31 drives the gas supply unit 29. In step S8, the processor 31 controls the on / off valve 42 to be closed and the on / off valve 43 to be open. In step S8, the processor 31 controls the moving mechanism 6 to move the elevator 5 to the third position 5C. Thus, while supplying inactive gas into the chamber 1 from the gas nozzle 13, the substrate W is moved out of the chamber 1.

[0085] Here, it is known that in the substrate after drying, unique particles are attached near the portions supported by the support plates 62, 63, 72, and 73 of the lifting device 5. When the edge exclusion region of the substrate W is less than 2 mm, these unique particles are detected as undesirable particles. That is, as the edge exclusion region becomes smaller and the structure formed on the substrate W becomes more refined, the tolerance criteria for particles become stricter, and previously permissible particles are now detected as unique particles.

[0086] The inventors believe that one reason for the unique particle adhesion to the substrate W is the presence of droplets of processing liquid remaining on the substrate W at the locations where it contacts the support plates 62, 63, 72, and 73 of the lifting device 5. For example, when the substrate W is removed from the processing tank 3, droplets of DIW may sometimes remain on the substrate W at the locations where it contacts the support plates 62, 63, 72, and 73. Hereinafter, the case where droplets of processing liquid remain on the substrate W at the locations where it contacts the inner support plate 62 and the outer support plate 63 of the side holding arm 60 will be described as an example.

[0087] Reference Figure 6 One reason for the unique particles adhering to the substrate W is explained. Figure 6 This is a schematic diagram illustrating one reason why unique particles adhere to the substrate W. Figure 6 The symbol 600 schematically illustrates the state of the DIW droplet A1 when the atmosphere in chamber 1 is an IPA atmosphere. Figure 6 The symbol 601 schematically illustrates the state of the DIW droplet A2 when the atmosphere in chamber 1 is changed from an IPA atmosphere to an N2 gas atmosphere.

[0088] Figure 6 The symbols 600 and 601 represent droplets A1 and A2 of DIW remaining on the substrate W at the locations where it contacts the inner support plate 62 and the outer support plate 63 of the side holding arm 60, respectively. Droplets A1 and A2 are droplets of DIW remaining on the substrate W when the substrate W immersed in the processing tank 3 is removed from the processing tank 3.

[0089] The states of droplets A1 and A2 attached to substrate W are affected by the differences in surface tension between substrate W and droplets A1 and A2, and between the atmosphere in chamber 1 and droplets A1 and A2. Figure 6 As indicated by symbol 600, in the case of an IPA atmosphere within chamber 1, droplets A1 in contact with the low surface tension of the IPA atmosphere concentrate without diffusing. For example... Figure 6 As indicated by symbol 601, when the chamber 1 is initially filled with an IPA atmosphere and then becomes an N2 gas atmosphere, the droplet A2 becomes a liquid composed of a mixture of DIW and IPA. Therefore, the droplet A2, with its reduced surface tension, diffuses under the influence of the substrate W, which has a high surface tension. In particular, if, for example, a silicon oxide film is formed on the surface of the substrate W, or if the surface of the substrate W is hydrophilic, the droplet A2 diffuses more easily.

[0090] Droplets A1 and A2 may contain particles. When particles are present in droplets A1 and A2, convection occurs within them, causing the particles to move within the droplets. This convection occurs, for example, during a drying process to dry the substrate W. On the surface of the substrate W undergoing drying, the surface tension increases due to the temperature rise caused by the evaporation of the liquid. Therefore, within droplets A1 and A2 on the substrate W undergoing drying, convection occurs from the top of the center of the droplet's shape toward the substrate W. When convection occurs from its top toward the substrate W, near the substrate W, convection occurs along the surface of the substrate W toward the outer periphery of the droplet's shape. Furthermore, droplets A1 and A2 on the substrate W undergoing drying gradually evaporate from the center of their shape, eventually evaporating at the outer periphery. That is, it is assumed that when there are particles in droplets A1 and A2, when droplets A1 and A2 on substrate W evaporate, the particles adhere to substrate W in a manner that follows the shape of droplets A1 and A2.

[0091] Figure 6 The droplet A1, indicated by symbol 600, is concentrated and does not diffuse. Therefore, it is believed that even if droplet A1 dries and particles adhere to the substrate W, the area of ​​particle adhesion can be relatively narrow. However, Figure 6The diffusion of droplet A2, as indicated by symbol 601, suggests that the range of particles adhering to substrate W increases when droplet A2 is dry. Therefore, it is believed that after replacing the processing liquid with an organic solvent gas, performing a drying process of substrate W in an organic solvent gas atmosphere, and then performing a drying process of substrate W in a drying gas atmosphere, the possibility of unique particles adhering to substrate W can be reduced.

[0092] According to the substrate processing apparatus 100 described above, in a state where the chamber 1 is depressurized, an organic solvent gas is supplied for a predetermined time toward the area including the contact position between the lifting device 5 and the substrate W. Therefore, even if droplets of processing liquid remain near the contact position between the substrate W and the lifting device 5, the substrate W can be dried while preventing the droplets from spreading. This reduces the possibility of unique particles adhering to the substrate W. Consequently, the product yield can be improved. This invention is particularly effective for substrates W with hydrophilic surfaces such as those having a silicon oxide film formed on their surface.

[0093] Furthermore, by continuously supplying the organic solvent gas in the depressurized state of chamber 1 within a range of 3 to 10 seconds, the diffusion of droplets of the processing liquid adhering to the substrate W can be reduced while the substrate W is being dried. Additionally, by limiting the supply time of the organic solvent gas, the substrate processing time of the substrate processing apparatus 100 can be reduced.

[0094] Furthermore, by positioning the gas nozzle 12 at a height lower than the center C1 of the substrate W held by the lifter 5 located at the second position 5B, the organic solvent gas supplied from the gas nozzle 12 can be supplied more efficiently to the area including the contact position between the lifter 5 and the substrate W. This reduces the likelihood of unique particles adhering to the substrate W.

[0095] In addition, regarding the gas supply in chamber 1, it can also be configured such that, instead of switching between organic solvent vapor and inactive gas in gas supply pipe 22, there is a gas supply pipe 22A that supplies only inactive gas and a gas supply pipe 22B that supplies only organic solvent vapor, and gas nozzles 12A and 12B corresponding to each gas supply pipe are arranged instead of gas nozzle 12, and similarly gas nozzles 13A and 13B are arranged instead of gas nozzle 13.

[0096] 〔Summarize〕

[0097] A substrate processing apparatus according to one aspect of the present invention performs a predetermined processing on a substrate, comprising: a processing tank for storing a processing liquid; a chamber for housing the processing tank; a lifter for holding the substrate; a moving mechanism for moving the lifter up and down between a first position in which the substrate is immersed in the processing liquid in the processing tank and a second position in which the substrate is located outside the processing tank; a processing liquid nozzle for supplying processing liquid to the processing tank; a gas nozzle for supplying inactive gas or organic solvent gas to the chamber; and a control unit for controlling the operation of the moving mechanism and controlling the supply of processing liquid by the processing liquid nozzle and the supply of inactive gas by the gas nozzle. The control unit provides the following control actions: (1) immersing the substrate in the processing liquid stored in the processing tank; (2) making the chamber an atmosphere of organic solvent gas; (3) supplying the organic solvent gas to the area including the contact position between the lifting device and the substrate while the substrate is lifted from the processing tank; and (4) supplying the organic solvent gas to the area including the contact position between the lifting device and the substrate while the chamber is depressurized, and continuing the supply for a predetermined time.

[0098] Furthermore, in a substrate processing apparatus according to one aspect of the present invention, the control unit continuously supplies the organic solvent gas to the region including the contact position between the elevator and the substrate for a period of 3 to 10 seconds after the chamber is depressurized.

[0099] Furthermore, in a substrate processing apparatus according to one aspect of the present invention, the gas nozzle is positioned at a height lower than the center of the substrate held by the lifter located at the second position.

[0100] One aspect of the present invention is a substrate processing method of a substrate processing apparatus for performing a predetermined processing on a substrate. The substrate processing apparatus includes: a processing tank for storing a processing liquid; a chamber for housing the processing tank; a lifter for holding the substrate; a moving mechanism for moving the lifter up and down between a first position in which the substrate is immersed in the processing liquid in the processing tank and a second position in which the substrate is located outside the processing tank; a processing liquid nozzle for supplying processing liquid to the processing tank; and a gas nozzle for supplying an inactive gas or an organic solvent gas to the chamber. In this substrate processing method, (1) the substrate is immersed in the processing liquid stored in the processing tank; (2) the chamber is made into an atmosphere of the organic solvent gas; (3) while the substrate is lifted from the processing tank, the organic solvent gas is supplied to a region including the contact position between the lifter and the substrate; and (4) after the chamber is depressurized, the organic solvent gas is supplied to the region including the contact position between the lifter and the substrate, and the supply is continued for a predetermined time.

Claims

1. A substrate processing apparatus for performing a predetermined process on a substrate, characterized in that, have: A treatment tank for storing the treatment solution; A chamber that houses the processing tank; A lifter that holds the substrate; A moving mechanism that causes the lifter to move up and down between a first position in which the substrate is immersed in the processing liquid in the processing tank and a second position in which the substrate is located outside the processing tank. A treatment fluid nozzle supplies treatment fluid to the treatment tank; A gas nozzle that supplies an inactive gas or organic solvent gas into the chamber; The control unit controls the operation of the moving mechanism, and controls the supply of treatment liquid by the treatment liquid nozzle, the supply of inactive gas by the gas nozzle, and the supply of organic solvent gas by the gas nozzle; and The memory stores information representing the control actions of the control unit. The control unit works in conjunction with the memory to perform the following control: (1) Immerse the substrate in the processing solution stored in the processing tank. (2) Make the chamber a gaseous atmosphere of the organic solvent. (3) With the substrate lifted from the processing tank, the organic solvent gas is supplied toward the area including the contact position between the lifter and the substrate. (4) In the state after the chamber is depressurized, the organic solvent gas is supplied to the area including the contact position between the elevator and the substrate, and the supply is continued for a predetermined time.

2. The substrate processing apparatus according to claim 1, characterized in that, The control unit ensures that the supply of organic solvent gas to the region including the contact position between the elevator and the substrate is continuous within a range of 3 to 10 seconds after the chamber is depressurized.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, The gas nozzle is positioned at a height lower than the center of the substrate held by the lifter located in the second position.

4. A substrate processing method using a substrate processing apparatus, wherein the substrate processing apparatus performs a predetermined processing on a substrate, characterized in that, The substrate processing apparatus includes: A treatment tank for storing the treatment solution; A chamber that houses the processing tank; A lifter that holds the substrate; A moving mechanism that causes the lifter to move up and down between a first position in which the substrate is immersed in the processing liquid in the processing tank and a second position in which the substrate is located outside the processing tank. A treatment fluid nozzle supplies treatment fluid to the treatment tank; and A gas nozzle supplies the chamber with an inert gas or an organic solvent gas. In this substrate processing method, (1) Immerse the substrate in the processing solution stored in the processing tank. (2) Make the chamber a gaseous atmosphere of the organic solvent. (3) With the substrate lifted from the processing tank, the organic solvent gas is supplied toward the area including the contact position between the lifter and the substrate. (4) In the state after the chamber is depressurized, the organic solvent gas is supplied to the area including the contact position between the elevator and the substrate, and the supply is continued for a predetermined time.

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