Conveyance apparatus, semiconductor manufacturing apparatus, and method for manufacturing semiconductor device

Abstract

The present invention prevents unnecessary contact of a semiconductor wafer with a transport hand caused by warping of the semiconductor wafer. A transport device has a transport hand that transports a semiconductor wafer, a guide connected to the transport hand that supports the semiconductor wafer, and a member disposed below the guide that can adjust the height of the contact point of the guide with the semiconductor wafer according to the shape of the warping of the semiconductor wafer.

Description

Technical Field

[0001] Embodiments of the present invention relate to a conveying device, a semiconductor manufacturing apparatus, and a method for manufacturing a semiconductor device. Background Technology

[0002] It is known that semiconductor devices such as three-dimensional memory are manufactured by using semiconductor manufacturing equipment to perform film formation or heat treatment. Summary of the Invention

[0003] The technical problem to be solved by the invention of the implementation method is to prevent unnecessary contact between the semiconductor wafer and the transport hand caused by the warping of the semiconductor wafer.

[0004] The conveying device of the embodiment includes: a conveyor for conveying a semiconductor wafer; a guide connected to the conveyor for supporting the semiconductor wafer; and a component disposed below the guide that can adjust the height of the contact point between the guide and the semiconductor wafer according to the warped shape of the semiconductor wafer. Attached Figure Description

[0005] Figure 1 This is a schematic diagram illustrating an example of the configuration of a semiconductor manufacturing apparatus.

[0006] Figure 2 This is a top view schematic diagram showing a construction example of the conveying device 41.

[0007] Figure 3 This is a top view schematic diagram showing another construction example of the conveying device 41.

[0008] Figure 4 This is a top view schematic diagram showing another construction example of the conveying device 41.

[0009] Figure 5 This is a schematic diagram showing an example of a semiconductor wafer 10.

[0010] Figure 6 This is a schematic diagram showing an example of a semiconductor wafer 10.

[0011] Figure 7 This is a schematic diagram showing an example of a semiconductor wafer 10.

[0012] Figure 8 This is a cross-sectional schematic diagram showing a construction example of the component in the first embodiment.

[0013] Figure 9 This is a bottom view schematic diagram showing an example of the construction of the components in the first embodiment.

[0014] Figure 10 This is a cross-sectional schematic diagram showing a modified example of the first embodiment.

[0015] Figure 11 This is a cross-sectional schematic diagram showing a construction example of the component in the second embodiment.

[0016] Figure 12 This is a cross-sectional schematic diagram showing a construction example of the component in the second embodiment.

[0017] Figure 13 This is a cross-sectional schematic diagram showing a modified example of the second embodiment.

[0018] Figure 14 This is a top view schematic diagram showing a modified example of the conveying device 41.

[0019] Figure 15 This is a top view schematic diagram showing a modified example of the conveying device 41.

[0020] Figure 16 This is a top view schematic diagram showing a modified example of the conveying device 41.

[0021] Figure 17 This is a top view schematic diagram showing a modified example of the conveying device 41.

[0022] Figure 18 This is a cross-sectional schematic diagram showing a modified example of the conveying device 41.

[0023] Figure 19 This is a cross-sectional schematic diagram showing a modified example of the conveying device 41. Detailed Implementation

[0024] The embodiments will now be described with reference to the accompanying drawings. The relationships between the thickness and planar dimensions of each component, and the proportions of the thicknesses of each component shown in the drawings, may sometimes differ from the actual object. Furthermore, in the embodiments, substantially identical components are labeled with the same reference numerals, and descriptions are appropriately omitted.

[0025] (Semiconductor manufacturing equipment)

[0026] Figure 1 This is a schematic diagram illustrating an example of the configuration of a semiconductor manufacturing apparatus. Figure 1 An example of the configuration of a vertically oriented LP-CVD (Low Pressure Chemical Vapor Deposition) apparatus 1 is shown. However, the semiconductor manufacturing apparatus of this embodiment is not limited to an LP-CVD apparatus.

[0027] The LP-CVD apparatus 1 includes a processing unit 100, a gas supply unit 200 for supplying gas to the processing unit 100, an exhaust unit 300 for discharging gas from the processing unit 100, and a transport unit 400 for transporting semiconductor wafers 10 between the processing unit 100 and the processing unit 100, such as moving them in and out. Figure 1The flow of gas, indicated by arrows, is also shown. The LP-CVD apparatus 1 is also connected to a power source (not shown) and has electrodes that apply voltage from the power source to the processing unit 100.

[0028] The processing unit 100 includes a processing container 11. The processing container 11 has a space 11a for accommodating a crystal boat 12. A heater may also be provided around the processing container 11. The space 11a constitutes a process chamber for processing the semiconductor wafer 10. Examples of processing the semiconductor wafer 10 include film deposition processes, such as introducing a raw material gas to form a film on the surface of the semiconductor wafer 10, and heat treatments such as annealing the semiconductor wafer 10, in semiconductor device manufacturing methods.

[0029] The crystal boat 12 is a carrier for housing the semiconductor wafer 10. The crystal boat 12 has a space 12b for housing the semiconductor wafer 10. The periphery of the semiconductor wafer 10 is held, for example, by a holding portion 12a of the crystal boat 12. The holding portion 12a is a protrusion provided on the inner side of the crystal boat 12 and protruding inward. The crystal boat 12 has a plurality of holding portions 12a arranged along the longitudinal direction. A gap for arranging the semiconductor wafer 10 is formed between each of the plurality of holding portions 12a. The length of the gap, i.e., the spacing P between the holding portions 12a, varies depending on the size of the semiconductor wafer 10 and the specifications of the LP-CVD apparatus 1, and is therefore not particularly limited, but is, for example, 6 mm or more.

[0030] Semiconductor wafer 10 is, for example, a semiconductor substrate processed by LP-CVD. Examples of semiconductor wafer 10 include semiconductor wafers that have been used to manufacture semiconductor devices or are in the process of manufacturing semiconductor devices. Semiconductor wafer 10 includes silicon wafers.

[0031] The gas supply unit 200, for example, is capable of controlling the supply of gas to the processing unit 100. The gas supply unit 200, for example, is capable of supplying raw material gas or inert gas to the space 11a. The gas supply unit 200, for example, includes at least one gas supply source, a flow regulator for adjusting the flow rate of gas from the gas supply source, and piping connecting the gas supply source to the processing unit 100 via the flow regulator.

[0032] The exhaust unit 300 controls the discharge of exhaust gas from the treatment unit 100. The exhaust unit 300 includes, for example: a piping for the flow of exhaust gas discharged from the space 11a; a pressure controller for controlling the pressure of the exhaust path including the piping; a purging device for treating the exhaust gas to remove harmful substances from the exhaust gas; and a pump for supplying the exhaust gas to the purging device.

[0033] The transport unit 400 is disposed below the processing unit 100. The transport unit 400 includes a transport device 41. The transport device 41 is controlled by a control device 42 and is capable of transporting semiconductor wafers 10 in and out between the processing unit 100 and the transport unit. The control device 42 is configured, for example, using hardware such as a processor. Alternatively, each action can be stored as an action program in a computer-readable recording medium such as a memory, and each action can be executed by appropriately reading the action program stored in the recording medium by the hardware. The control device 42 may have the aforementioned memory. For example, the control device 42 may also control the transport device 41 using information obtained inside the LP-CVD apparatus 1 or information obtained through communication with the outside of the LP-CVD apparatus 1 for process control of the semiconductor device using semiconductor wafers 10.

[0034] Figure 2 This is a top view schematic diagram showing a construction example of the conveying device 41. Figure 2 The X-axis, Y-axis, and Z-axis are shown. The X-axis, Y-axis, and Z-axis intersect each other perpendicularly.

[0035] The conveying device 41 has a conveyor arm 401 and a guide 402. The X-axis and Y-axis directions are the surface directions of the conveyor arm 401 and the guide 402. The Z-axis direction is the thickness direction of the conveyor arm 401 and the guide 402.

[0036] The conveyor 401 includes forks 411 and a connecting portion 412. The conveyor 401 includes multiple forks 411. The connecting portion 412 connects the multiple forks 411. Figure 2 Two forks 411 are shown, but the number of forks 411 is not particularly limited. The surface of the conveyor 401 may also have a U-shape, for example.

[0037] For example, the fork 411 extends from the joint 412 along the Y-axis direction, which is parallel to the XY surface of the surface 401a. In the XY plane, one of the forks 411 forms a gap G between it and another of the forks 411.

[0038] Guide members 402 are disposed on the surface of the transport hand 401. When transporting the semiconductor wafer 10 using the transport device 41, the guide members 402 contact the semiconductor wafer 10 and support it. The transport device 41 has a plurality of guide members 402. The plurality of guide members 402 are disposed, for example, at a position overlapping with the edge of the semiconductor wafer 10. The guide members 402 are preferably disposed, for example, with at least one on each side, and at least two on each side, such that they are disposed across the centerline C of the semiconductor wafer 10 perpendicular to the long axis direction on the surface of the transport hand 401.

[0039] The lateral width L1 and longitudinal width L2 of the guide 402 in the XY plane are not particularly limited, for example, less than 5 cm. The thickness of the guide 402 in the Z-axis direction is not particularly limited, for example, more than 0.5 mm and less than 5.0 mm. The guide 402 can also make 10-point contact with the semiconductor wafer. According to the required strength and other specifications of the guide 402, the size of the guide 402 is preferably as small as possible.

[0040] Figure 2 Four guides 402 are shown, but the number of guides 402 is not particularly limited. Figure 3 and Figure 4 This is a top view schematic diagram showing another construction example of the conveying device 41. Figure 3 An example with 3 guides 402 is shown. Figure 4 An example with eight guides 402 is shown. Additionally, as... Figure 4 As shown, the surface of the conveyor 401 can also have a horseshoe shape. Figure 3 and Figure 4 Other explanations may be cited appropriately. Figure 2 Explanation.

[0041] When performing film deposition, heat treatment, or other processes using the LP-CVD apparatus 1, the semiconductor wafer 10 may sometimes warp. Furthermore, the warping direction of the semiconductor wafer 10 may sometimes change before and after the processing.

[0042] Figure 5 This is a schematic diagram showing an example of a semiconductor wafer 10 housed in a crystal boat 12 and having a warp that bends upward along the Z-axis. Figure 6 This is a schematic diagram showing an example of a semiconductor wafer 10 housed in a crystal boat 12 and having a warp that bends downward along the Z-axis.

[0043] Figure 7 This is a schematic diagram illustrating an example of a semiconductor wafer 10 with three-dimensional warping. For example... Figure 7 As shown, after being processed, semiconductor wafer 10 sometimes warps in different directions between the X-axis and Y-axis directions. Figure 7 Examples are shown that bend downwards in the X-axis direction and upwards in the Y-axis direction, but the shape of the warp is not limited to these.

[0044] To remove the semiconductor wafers 10 housed in the crystal boat 12, a transport device 41 needs to be inserted between the semiconductor wafers 10. However, when the warpage of the semiconductor wafers 10 is large, the gap between the semiconductor wafers 10 is narrow. Therefore, it is necessary to increase the spacing P of the longitudinal holding portions 12a of the crystal boat 12 in a way that prevents the transport device 41 from contacting the semiconductor wafers 10 unnecessarily. In this case, the number of semiconductor wafers 10 that can be disposed in the crystal boat 12 is reduced, thus causing a decrease in productivity.

[0045] It is also considered to form grooves on the surface of the transport hand 401 to prevent contact with the semiconductor wafer 10 in unnecessary areas, so as to prevent the transport device 41 from contacting the semiconductor wafer 10. However, since the thickness of the transport hand 401 increases, the allowable range of warpage will be narrowed.

[0046] Here, the semiconductor manufacturing apparatus equipped with the transport device in this embodiment includes a component capable of adjusting the height of the contact point between the transport device 41 and the semiconductor wafer 10. Specific examples of the component will be described below.

[0047] (First Implementation)

[0048] Figure 8 This is a cross-sectional schematic diagram showing a construction example of the component in the first embodiment. Figure 8 The periphery of the transport hand 401, guide 402, and semiconductor wafer 10 is shown. Figure 8 The longitudinal width L2 and the thickness T of the guide 402 are also shown.

[0049] The conveying device 41 also includes a screw 403A, such as a set screw, as a component. The screw 403A is disposed below the guide 402. The screw 403A extends through the conveying hand 401 in the Z-axis direction perpendicular to the surface 401a and extends within the guide 402, engaging with the guide 402. By rotating the screw 403A, the threaded portion of the screw 403A advances within the conveying hand 401 in the Z-axis direction, thus changing the height of the guide 402. The conveying device 41 may also have multiple screws 403A for one guide 402.

[0050] For example, in such Figure 5 When the semiconductor wafer 10 shown is warped upwards, it is preferable to adjust the height of the guide 402 from the surface 401a to be lower than the reference value. Furthermore, in cases such as... Figure 6 When the semiconductor wafer 10 shown is warped downwards, it is preferable to adjust the height of the guide 402 from the surface 401a to be higher than the reference value.

[0051] Figure 9 This is a bottom view schematic diagram showing an example of the construction of the components in the first embodiment. Figure 9This is a schematic diagram viewed from the side of the conveyor 401, which is opposite to the side of the surface 401a, on the surface 401b.

[0052] The threaded portion of screw 403A may also be smaller than the opening of conveyor 401. Therefore, the distance between conveyor 401 and guide 402 can be adjusted by rotating screw 403A without rotating conveyor 401. Screw 403A may also have a groove (cut groove) 403a engraved on its head. Examples of the shape of groove 403a include shapes with an arrow or similar directional orientation. Furthermore, surface 401b may also have a dial-like scale 413 engraved around the groove 403a. By combining groove 403a and scale 413, when adjusting the height of guide 402 by rotating screw 403A, the height of guide 402 can be determined, for example, by the orientation of groove 403a, thus allowing for quantitative adjustment of the height of guide 402.

[0053] Figure 10 This is a cross-sectional schematic diagram showing a modified example of the first embodiment. For example... Figure 10 As shown, the guide 402 may also have a shape that extends to the gap G in a direction parallel to the surface 401a. Figure 10 An example is shown where the guide 402 contacts the periphery of the semiconductor wafer 10 above the gap G, but is not limited thereto. Figure 10 Other explanations may be cited appropriately. Figure 8 and Figure 9 Explanation.

[0054] As described above, in the first embodiment, by adjusting the height of the guide 402 from the surface 401a using screw 403A, the height of the contact surface between the guide 402 and the semiconductor wafer 10 can be adjusted according to the warped shape of the semiconductor wafer 10 before processing. Therefore, unnecessary contact between the transport device 41 and the semiconductor wafer 10 can be suppressed. Furthermore, even if the warping direction changes vertically depending on the application, the height of the contact surface between the guide 402 and the semiconductor wafer 10 can be changed according to the application using screw 403A. Therefore, the allowable range of warping can be expanded without increasing the spacing P of the holding portion 12a or without replacing the guide 402. Furthermore, in the semiconductor wafer 10 having... Figure 7 In cases of complex warping as shown, screws 403A can be provided for each of the multiple guides 402 to individually adjust the height of the multiple guides 402. Therefore, unnecessary contact between the transport device 41 and the semiconductor wafer 10 caused by warping of the semiconductor wafer 10 can be suppressed.

[0055] (Second Implementation)

[0056] Figure 11 and Figure 12 This is a cross-sectional schematic diagram showing a construction example of the component in the second embodiment. Figure 11 and Figure 12 The periphery of the transport hand 401, guide 402, and semiconductor wafer 10 is shown. Figure 11 and Figure 12 The longitudinal width L2 and the thickness T of the guide 402 are also shown.

[0057] The conveying device 41 also includes a piezoelectric element 403B as the aforementioned component. The piezoelectric element 403B is disposed below the guide 402 and fixed to the lower part of the guide 402. The piezoelectric element 403B is fixed to the surface 401a at one end, while the remaining portion is not fixed but simply contacts the surface 401a. The piezoelectric element 403B is connected to, for example, a control device 42 via wiring 414. The piezoelectric element 403B deforms into its shape according to the voltage applied from the control device 42, for example, by bending upwards. Figure 12 As shown, the deformation of the piezoelectric element 403B varies according to the applied voltage, thereby enabling the height of the guide 402 to change. The conveying device 41 may also have multiple piezoelectric elements 403B for one guide 402.

[0058] For example, in such Figure 5 When the semiconductor wafer 10 shown is warped upwards, it is preferable to adjust the height of the guide 402 from the surface 401a to be lower than the reference value. Furthermore, in cases such as... Figure 6 When the semiconductor wafer 10 shown is warped downwards, it is preferable to adjust the height of the guide 402 from the surface 401a to be higher than the reference value.

[0059] Figure 13 This is a cross-sectional schematic diagram showing a modified example of the second embodiment. For example... Figure 13 As shown, the guide 402 can also be configured, for example, to extend from above the surface 401a to the gap G in a direction parallel to the surface 401a. Figure 13 An example is shown where the guide 402 contacts the semiconductor wafer 10 above the gap G, but this is not a limitation. Furthermore, wiring 414 may extend into the interior of the transport hand 401. Figure 13 Other explanations may be cited appropriately. Figure 11 and Figure 12 Explanation.

[0060] As described above, in the second embodiment, by using the piezoelectric element 403B to adjust the height of the guide 402 from the surface 401a, for example, the height of the contact surface between the guide 402 and the semiconductor wafer 10 can be adjusted according to the warped shape of the semiconductor wafer 10 before processing the semiconductor wafer 10. Furthermore, even when the warping direction changes vertically depending on the application, the height of the contact surface between the guide 402 and the semiconductor wafer 10 can be changed according to the application by using the piezoelectric element 403B, thus expanding the allowable range of warping without increasing the spacing P of the holding portion 12a or replacing the guide 402. Further, in the semiconductor wafer 10 having... Figure 7 In cases of complex warping as shown, for example, a piezoelectric element 403B can be provided for each of the multiple guides 402, and the height of the multiple guides 402 can be adjusted individually. Therefore, unnecessary contact between the transport device 41 and the semiconductor wafer 10 caused by warping of the semiconductor wafer 10 can be suppressed.

[0061] The control device 42 can also control the voltage applied to the piezoelectric element 403B using information obtained inside the LP-CVD apparatus 1 or through communication with the outside of the LP-CVD apparatus 1 in order to control the manufacturing process of the semiconductor device using the semiconductor wafer 10, thereby adjusting the height of the guide 402 from the surface 401a. For example, based on information such as the warpage information of the semiconductor wafer 10 measured before processing, the warpage variation of semiconductor wafers 10 in previous batches processed, and processing conditions, the warpage after processing can be predicted, thereby automatically adjusting the guide 402 before and after processing to a height suitable for the warpage of the semiconductor wafer 10.

[0062] (Modified example of conveying device 41)

[0063] Figure 14 This is a top view schematic diagram showing a modified example of the conveying device 41. Figure 14 An example with four guides 402 is shown. Figure 14 The conveying device 41 shown has a structure in which, when the semiconductor wafer 10 is disposed, the plurality of forks 411 are not connected below the semiconductor wafer 10. In other words, Figure 14 The conveying device 41 shown has a configuration in which the semiconductor wafer 10 is separated from the junction 412 in the Y-axis direction when the semiconductor wafer 10 is disposed thereon. The method for forming this configuration is not particularly limited; for example, a method in which the length of the plurality of forks 411 in the Y-axis direction is longer than the diameter of the semiconductor wafer 10 can be cited. In this case, four guides 402 are provided at the end side (junction 412 side) and the front end side (opposite side of the junction 412) of the plurality of forks 411. Figure 14 Other explanations may be cited appropriately. Figure 2 Explanation.

[0064] By configuring the above structure, contact between the transport hand 401 and the semiconductor wafer 10 can be suppressed on the lower side of the semiconductor wafer 10. Therefore, unnecessary contact between the transport device 41 and the semiconductor wafer 10 caused by the warping of the semiconductor wafer 10 can be suppressed without increasing the height of the guide 402 or the thickness of the transport hand 401. The above structure is particularly effective when the semiconductor wafer 10 is bent downwards.

[0065] The variations of the conveying device 41 are not limited to Figure 14 The structure shown. Figure 15 , Figure 16 , Figure 17 This is a top view schematic diagram showing other construction examples of the conveying device 41. Figure 18 and Figure 19 This is a cross-sectional schematic diagram showing other construction examples of the conveying device 41.

[0066] Figure 15 The conveying device 41 shown and Figure 14 Compared to the conveying device 41 shown, the latter differs in at least the following aspects: the joint 412 has an inner surface 412a, which is a curved surface opposite to the disposed semiconductor wafer 10 in the Y-axis direction and along the periphery of the semiconductor wafer 10. The curvature of the inner surface 412a is preferably the same as the curvature of the end of the semiconductor wafer 10. By making the inner surface 412a curved, for example, the cross-sectional area of ​​the joint 412 can be increased, thereby improving the rigidity of the conveying hand 401. Therefore, deformation of the conveying hand 401 caused by the placement of the semiconductor wafer 10 can be suppressed.

[0067] Figure 16 The conveying device 41 shown and Figure 15 Compared to the conveying device 41 shown, it differs at least in having four forks 411. Two of the four forks 411 are arranged side-by-side in the X-axis direction and have a first length La in the Y-axis direction. The remaining two forks 411 are arranged outside the forks 411 with the first length La in the X-axis direction and have a second length Lb shorter than the first length La in the Y-axis direction. At this time, four guides 402 are respectively provided on the front end side of the plurality of forks 411 (opposite to the joint 412). By providing a plurality of forks 411 with different lengths in the Y-axis direction, the load on the longer forks 411 can be reduced when the semiconductor wafer 10 is arranged. Therefore, deformation of the conveying hand 401 caused by the arrangement of the semiconductor wafer 10 can be suppressed.

[0068] Figure 17 The conveying device 41 shown and Figure 15Compared to the conveying device 41 shown, it differs in at least the following aspects: it has a structure in which the width D1 of the joint 412 in the X-axis direction is wider than the distance D2 in the X-axis direction between the farthest forks 411. The method of increasing the width D1 of the joint 412 is not particularly limited; for example, the method of providing the protrusion 401c can be cited. The protrusion 401c is a protrusion that protrudes outward from the forks 411 in the X-axis direction. The planar shape of the protrusion 401c is not particularly limited; for example, it can be triangular. The protrusion 401c may also extend from the joint 412 along a portion of the forks 411 in the Y-axis direction. The protrusion 401c is preferably separated from the semiconductor wafer 10 when it is disposed. By providing the protrusion 401c, for example, the cross-sectional area of ​​the joint 412 can be increased, thus improving the rigidity of the conveyor 401. Therefore, deformation of the conveyor 401 caused by the disposal of the semiconductor wafer 10 can be suppressed.

[0069] Figure 18 and Figure 19 The conveying device 41 shown and Figure 15 Compared to the conveying device 41 shown, the difference lies in that, in a cross-section including the X-axis and Z-axis directions, the width of the upper surface (surface 401a) of the fork 411 in the X-axis direction is narrower than that of the lower surface (surface 401b) of the fork 411. The shape of the XZ cross-section of the fork 411 is not particularly limited, for example, it can be trapezoidal. By narrowing the width of the upper surface of the fork 411, the distance between the fork 411 and the semiconductor wafer 10 can be increased. Therefore, the height of the guide 402 required to avoid contact between the fork 411 and the semiconductor wafer 10 can be reduced. The above configuration is... Figure 18 The semiconductor wafer 10 shown is bent downwards, or Figure 19 This is particularly effective when the semiconductor wafer 10 is bent upwards as shown. Furthermore, compared to the case where the XZ cross-section of the fork 411 is rectangular, the cross-sectional area can be easily increased, thus improving the rigidity of the transport hand 401. Therefore, deformation of the transport hand 401 caused by the arrangement of the semiconductor wafer 10 can be suppressed.

[0070] in addition, Figures 14 to 19 The modified examples of the conveying device 41 shown can be appropriately combined with the first and second embodiments. However, this is not a limitation. Figures 14 to 19 The modified example of the conveying device 41 shown does not necessarily have a component that can adjust the height of the contact point between the conveying device 41 and the semiconductor wafer 10, as shown in the first and second embodiments.

[0071] While several embodiments of the invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are included within the scope of the invention as described in the claims and its equivalents.

[0072] [Explanation of reference numerals in the attached figures]

[0073] 1: LP-CVD apparatus, 10: Semiconductor wafer, 11: Processing container, 11a: Space, 12: Boat, 12a: Holding part, 12b: Space, 41: Transport device, 42: Control device, 100: Processing part, 200: Gas supply part, 300: Exhaust part, 400: Transport part, 401: Transport hand, 401a: Surface, 401b: Surface, 401c: Protrusion, 402: Guide, 403A: Screw, 403B: Piezoelectric element, 403a: Groove, 411: Fork, 412: Joint, 412a: Inner side, 413: Scale, 414: Width, C: Centerline, D1: Width, D2: Distance, G: Gap, L1: Lateral width, L2: Longitudinal width, La: First length, Lb: Second length, P: Spacing.

Claims

1. A conveying device comprising: A conveyor that transports semiconductor wafers; A guide element, connected to the conveyor hand, supports the semiconductor wafer; and A component, disposed below the guide, is capable of adjusting the height of the junction between the guide and the semiconductor wafer according to the warped shape of the semiconductor wafer.

2. The conveying device according to claim 1, wherein, The conveyor arm has: Multiple forks extending in a first direction parallel to the surface of the conveyor hand; as well as The joint connects multiple forks. The guide is disposed on the surface of the conveyor and extends from the surface of the conveyor to the gap between the plurality of forks along a second direction parallel to the surface of the conveyor.

3. The conveying device according to claim 1, wherein, The component includes a screw that passes through the conveyor in a third direction perpendicular to the surface of the conveyor and engages with the guide, enabling adjustment of the height of the guide relative to the surface of the conveyor.

4. The conveying device according to claim 1, wherein, The component is fixed to the lower part of the guide and can deform the shape of the component.

5. The conveying device according to claim 4, wherein, In order to control the manufacturing process of a semiconductor device using the semiconductor wafer, the amount of deformation of the component is controlled using information obtained inside the semiconductor manufacturing apparatus including the transport device, or through communication with the outside of the semiconductor manufacturing apparatus.

6. The conveying device according to claim 1, wherein, The conveying device has multiple of the aforementioned guides. The component is provided for each of the multiple guides.

7. The conveying device according to claim 2, wherein, When the semiconductor wafer is disposed, the junction is separated from the semiconductor wafer in the first direction.

8. The conveying device according to claim 2, wherein, The junction has an inner surface that is a curved surface that is opposite to the disposed semiconductor wafer in the first direction and along the periphery of the semiconductor wafer.

9. The conveying device according to claim 2, wherein, The plurality of forks include: A plurality of first forks having a first length in the first direction; and A plurality of second forks are disposed on the outside of the plurality of first forks in a fourth direction perpendicular to the first direction, and have a second length shorter than the first length in the first direction.

10. The conveying device according to claim 2, wherein, The width of the joint in the fourth direction perpendicular to the first direction is wider than the distance in the fourth direction between the plurality of forks that are furthest apart.

11. The conveying device according to claim 2, wherein, In a cross-section of the plurality of forks including a third direction perpendicular to the surface of the conveyor and a fourth direction perpendicular to the first direction, the width of the upper surface of one of the plurality of forks in the fourth direction is narrower than the width of the lower surface of one of the plurality of forks in the fourth direction.

12. A semiconductor manufacturing apparatus, comprising: A container that houses a boat capable of arranging semiconductor wafers; and A conveying device comprising: a conveyor for conveying the semiconductor wafer; a guide connected to the conveyor for supporting the semiconductor wafer; and a component capable of adjusting the height of the contact point between the guide and the semiconductor wafer according to the warped shape of the semiconductor wafer.

13. The semiconductor manufacturing apparatus according to claim 12, wherein, The conveyor arm has: Multiple forks extending in a first direction parallel to the surface of the conveyor hand; as well as The joint connects multiple forks. The guide is disposed on the surface of the conveyor and extends from the surface of the conveyor to the gap between the plurality of forks along a second direction parallel to the surface of the conveyor.

14. The semiconductor manufacturing apparatus according to claim 12, wherein, The component includes a screw that passes through the conveyor in a third direction perpendicular to the surface of the conveyor and engages with the guide, enabling adjustment of the height of the guide relative to the surface of the conveyor.

15. The semiconductor manufacturing apparatus according to claim 12, wherein, The component is fixed to the lower part of the guide and can deform the shape of the component.

16. The semiconductor manufacturing apparatus according to claim 15, wherein, In order to control the manufacturing process of a semiconductor device using the semiconductor wafer, the amount of deformation of the component is controlled using information obtained inside the semiconductor manufacturing apparatus or through communication with the outside of the semiconductor manufacturing apparatus.

17. The semiconductor manufacturing apparatus according to claim 12, wherein, The semiconductor manufacturing apparatus has a plurality of the aforementioned guides. The component is provided for each of the multiple guides.

18. A method for manufacturing a semiconductor device, wherein: Using a transport device, semiconductor wafers are positioned in a crystal boat housed in a container. The semiconductor wafer is processed in the container. The conveying device includes: a conveyor for conveying the semiconductor wafer; and a guide connected to the conveyor for supporting the semiconductor wafer. And components, the components being capable of adjusting the height of the contact point between the guide and the semiconductor wafer, Before processing the semiconductor wafer, the height of the contact point between the guide and the semiconductor wafer is adjusted according to the warped shape of the semiconductor wafer.

19. The method of manufacturing a semiconductor device according to claim 18, wherein, The conveyor arm has: Multiple forks extending in a first direction parallel to the surface of the conveyor hand; as well as The joint connects multiple forks. The guide is disposed on the surface of the conveyor and extends from the surface of the conveyor to the gap between the plurality of forks along a second direction parallel to the surface of the conveyor.

20. The method of manufacturing a semiconductor device according to claim 18, wherein, The component includes a screw that passes through the conveyor in a third direction perpendicular to the surface of the conveyor and engages with the guide, enabling adjustment of the height of the guide relative to the surface of the conveyor.

21. The method of manufacturing a semiconductor device according to claim 18, wherein, The component is fixed to the lower part of the guide and can deform the shape of the component.

22. The method of manufacturing a semiconductor device according to claim 21, wherein, In order to control the manufacturing process of a semiconductor device using the semiconductor wafer, the amount of deformation of the component is controlled using information obtained inside the semiconductor manufacturing apparatus including the transport device, or through communication with the outside of the semiconductor manufacturing apparatus.

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