Metal stripping method and stripping device

Abstract

The present disclosure provides a metal stripping method and a stripping device, and belongs to the technical field of semiconductor manufacturing. The metal stripping method comprises the following steps: preparing a patterned photoresist layer on a wafer surface; depositing a metal layer on the surface of the patterned photoresist layer; and spraying a stripping solvent on the entire wafer surface to dissolve the photoresist layer and strip the metal layer. The present disclosure can improve the problem of low efficiency and easy damage to the metal layer in the metal stripping process.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to a metal stripping method and stripping apparatus. Background Technology

[0002] Metal stripping is a common process in semiconductor device fabrication. Metal stripping uses photoresist as a sacrificial layer. First, the outline of the metal pattern is defined on the wafer using photolithography. Then, a thin metal film is deposited to cover the surface. Finally, the sacrificial layer is stripped to preserve the metal pattern within the window.

[0003] In related technologies, metal stripping includes two types: the first type involves initially stripping part of the metal or photoresist manually or mechanically, and then using a single-wafer stripper to complete the subsequent removal of the photoresist; the second type involves first pre-soaking the wafer in a solvent in an immersion chamber to soften the bonding layer between the photoresist and the metal, then stripping the metal and photoresist, and finally cleaning and drying.

[0004] However, the first type of physical gold peeling and single-wafer stripping method not only adds an extra step of physical gold peeling, reducing process efficiency, but also easily causes problems such as ESD (electrostatic discharge) and metal crushing (mechanical contact causing damage to the metal layer or underlying structure) during operation; the second type of immersion process is time-consuming, and the large metal fragments generated by peeling will float in the solvent and may re-adhere to the wafer surface, directly affecting the yield and reliability of the product. Summary of the Invention

[0005] This disclosure provides a metal stripping method and apparatus, which can improve the problems of low efficiency and easy damage to the metal layer in metal stripping processes. The technical solution is as follows: This disclosure provides a metal stripping method, which includes: preparing a patterned photoresist layer on the surface of a wafer; depositing a metal layer on the surface of the patterned photoresist layer; and spraying a stripping solvent onto the entire surface of the wafer to dissolve the photoresist layer and strip the metal layer.

[0006] In another implementation of the present disclosure, spraying the entire wafer with stripping solvent includes: mounting the wafer on a stage, controlling the stage to rotate during the spraying process, and spraying the stripping solvent onto the wafer from one edge to the other in a fan-shaped spray pattern.

[0007] In another implementation of the present disclosure, spraying the entire wafer with a stripping solvent includes: performing a first spraying stage and a second spraying stage in sequence, wherein the oscillation frequency of the spray head in the first spraying stage is lower than the oscillation frequency of the spray head in the second spraying stage.

[0008] In another implementation of the present disclosure, in the first spraying stage, the spray head oscillates at a frequency of 3 to 8 seconds each time, and the duration of the first spraying stage is 3 to 15 seconds; in the second spraying stage, the spray head oscillates at a frequency of 1 to 5 seconds each time.

[0009] In another implementation of the present disclosure, controlling the rotation of the platform during the spraying process includes: controlling the platform to stop rotating during the first spraying stage; and controlling the platform to rotate at a set speed during the second spraying stage.

[0010] In another implementation of the present disclosure, the set rotational speed is greater than or equal to 1000 rpm.

[0011] In another implementation of the present disclosure, spraying the entire wafer with a stripping solvent includes controlling the temperature of the stripping solvent to be between 80°C and 90°C.

[0012] In another implementation of the present disclosure, spraying the entire wafer with a stripping solvent includes controlling the spray pressure of the spray head to be between 800 psi and 1500 psi.

[0013] In another implementation of the embodiments of this disclosure, the stripping solvent includes N-methylpyrrolidone.

[0014] This disclosure provides a stripping device for implementing the metal stripping method described above. The stripping device includes a stage and a spray head.

[0015] The beneficial effects of the technical solutions provided in this disclosure include at least the following: The metal stripping method provided in this disclosure employs a spray solvent approach, eliminating the need for physical gold removal or prolonged solvent immersion. This ensures process effectiveness while improving operational safety, efficiency, and product yield. Firstly, this disclosure achieves a completely non-contact metal stripping process, effectively avoiding the electrostatic discharge (ESD) risks and metal damage associated with physical gold removal. Since no mechanical contact with the wafer surface is required, electrostatically sensitive or structurally delicate components are adequately protected, significantly enhancing the reliability of the final product. Simultaneously, this eliminates problems such as metal layer depressions, fractures, or damage to the underlying structure that could result from mechanical operations.

[0016] Secondly, the embodiments disclosed herein eliminate the lengthy solvent immersion step required in related technologies, instead directly spraying the solvent to dissolve the photoresist onto the entire wafer surface. This effectively shortens the process cycle, increases the processing speed of a single wafer, and improves overall production capacity. Furthermore, by reducing multiple independent steps such as immersion and rinsing, the process flow is more compact, saving equipment downtime, reducing labor and material management costs, and facilitating the continuous and stable operation of automated production lines. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart of a metal stripping method provided in an embodiment of this disclosure; Figure 2 This is a schematic diagram of a peeling device provided in an embodiment of this disclosure; Figure 3 This is a schematic diagram of the swing path of a spray head provided in an embodiment of this disclosure.

[0019] The markings in the diagram are explained as follows: 10. Wafers; 20. Sprinkler head; 21. Swing arm; 30. Platform. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0021] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” “top,” and “bottom,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0022] Figure 1 This is a flowchart of a metal stripping method provided in an embodiment of this disclosure. Figure 1 As shown, the metal stripping method includes: Step S11: Prepare a patterned photoresist layer on the wafer surface.

[0023] The photoresist layer has an opening on its surface that exposes the wafer.

[0024] Step S12: Deposit a metal layer on the surface of the patterned photoresist layer.

[0025] For example, a metal layer is formed on the surface of the photoresist layer and within the openings.

[0026] Step S13: Spray stripping solvent onto the entire wafer to dissolve the photoresist layer and strip the metal layer.

[0027] The metal stripping method provided in this disclosure employs a combination of solvent spraying and stage rotation, eliminating the need for physical gold removal or prolonged solvent immersion. This ensures process effectiveness while improving operational safety, efficiency, and product yield. Firstly, this disclosure achieves fully non-contact metal stripping, effectively avoiding the electrostatic discharge (ESD) risks and metal damage associated with physical gold removal. Since no mechanical contact with the wafer surface is required, electrostatically sensitive or structurally delicate components are adequately protected, significantly enhancing the reliability of the final product. Simultaneously, this eliminates problems such as metal layer depressions, fractures, or damage to the underlying structure that can occur during mechanical operations.

[0028] Secondly, the embodiments disclosed herein eliminate the lengthy solvent immersion step required in related technologies, instead directly spraying the solvent to dissolve the photoresist onto the entire wafer surface. This effectively shortens the process cycle, increases the processing speed of a single wafer, and improves overall production capacity. Furthermore, by reducing multiple independent steps such as immersion and rinsing, the process flow is more compact, saving equipment downtime, reducing labor and material management costs, and facilitating the continuous and stable operation of automated production lines.

[0029] The first type of method in related technologies relies on manual or mechanical peeling of gold followed by single-piece stripping. This process is not only cumbersome but also prone to introducing static electricity and mechanical stress during operation, causing device damage. Its efficiency is low, and the pace is limited by the switching between manual and equipment operations, making it difficult to meet the high-speed and high-consistency requirements of modern manufacturing. In contrast, the embodiments disclosed herein utilize full chemical dissolution and fluid dynamics-assisted stripping, eliminating the need for physical intervention. This improves operational safety and achieves greater process consistency.

[0030] The second type of immersion method in related technologies, while reducing some mechanical stress by softening the photoresist through pre-immersion, not only slows down the overall process due to prolonged immersion but also leads to difficulties in controlling metal debris in the solvent, increasing the burden on subsequent cleaning processes and raising yield risks. The embodiments disclosed in this disclosure, however, directly dissolve the photoresist through spraying and enhance chip removal capabilities through rotation. This accelerates the reaction speed while controlling the contamination range, resulting in a cleaner and more efficient process, making it particularly suitable for semiconductor manufacturing scenarios with high requirements for efficiency and yield.

[0031] This disclosure embodiment verifies the results through actual metal stripping operations. Comparative experiments were conducted using the first type of related technology (physical gold stripping combined with a single-wafer stripper), the second type (solvent immersion combined with stripping and cleaning), and the stripping method provided in this disclosure embodiment. Yield measurements were performed on three wafers processed by each method. Experimental results show that the yield of the first type of method is 90%, the yield of the second type is 94%, while the metal stripping yield achieved using the stripping method provided in this disclosure embodiment reaches 99%. Compared to the first type of method, the yield is improved by 9%; compared to the second type of method, the yield is improved by 5%.

[0032] The above experimental results fully demonstrate that the non-contact metal stripping method using a combination of immersion-free, spray-dissolution, and stage rotation, as employed in the stripping method provided in this disclosure, can effectively avoid electrostatic damage and mechanical crushing caused by physical gold peeling, while overcoming problems such as metal debris re-adhesion during the immersion process, thereby improving product yield. By reducing process steps, optimizing solvent action, and enhancing contaminant control capabilities, it exhibits higher pattern integrity and process stability in practical applications.

[0033] Step S11 may include the following steps: First, standard cleaning and pretreatment are performed on the substrate surface to ensure that the surface is clean, free of impurities, and has a good foundation for film formation and patterning.

[0034] For example, the substrate material includes silicon (Si), sapphire, silicon carbide (SiC), and other substrates suitable for the manufacture of semiconductors and optoelectronic devices.

[0035] Then, a layer of photoresist is uniformly coated on the substrate surface by spin coating or spray coating.

[0036] To ensure the effectiveness of subsequent metal stripping processes, the thickness of the photoresist is typically 5 to 10 times the thickness of the metal to be deposited. A sufficiently thick photoresist layer can leave some space after the metal covers its surface, allowing the stripping solvent to penetrate smoothly into the sidewalls and bottom interface of the photoresist during subsequent processing, thereby ensuring that the photoresist and metal can be completely and cleanly removed.

[0037] After coating, a pre-baking process is performed to evaporate the solvent components in the photoresist, thereby enhancing the density and adhesion of the film layer.

[0038] Next, the pre-made mask is precisely aligned with the wafer, and then exposed to ultraviolet light or other suitable wavelength light sources to transfer the pattern information on the mask to the photoresist layer.

[0039] The development process removes the soluble photoresist, creating openings with a predetermined pattern within the previously continuous photoresist layer. By carefully designing the mask pattern and exposure conditions, these openings can be made to exhibit an inverted trapezoidal cross-section structure that is wider at the top and narrower at the bottom. This type of cross-section structure facilitates the penetration of the stripping solvent during the lift-off process, reducing the risk of metal residue and incomplete stripping.

[0040] Step S12 may include: on the basis of the patterned photoresist layer, using a metal film deposition process such as physical vapor deposition (PVD), chemical vapor deposition (CVD) or electroplating, uniformly depositing a metal thin film on the entire wafer surface.

[0041] Since the photoresist surface and the opening area it defines are both exposed, metal atoms or ions will simultaneously cover the upper surface of the photoresist and the wafer surface exposed within the opening, thus forming a continuous metal layer structure.

[0042] In this process, the metal inside the opening is in direct contact with the wafer surface to achieve an electrical connection, while the metal on the photoresist surface is removed along with the photoresist in subsequent processes.

[0043] Step S13 may include: mounting the wafer on a stage, controlling the stage to rotate during the spraying process, and spraying stripping solvent onto the wafer from one edge to the other in a fan-shaped spray pattern.

[0044] Figure 2 This is a schematic diagram of a peeling device provided in an embodiment of this disclosure. Figure 2 As shown, the fan-shaped spray pattern refers to the spray head expanding its spray path at a certain angle during movement, causing the stripping solvent to be distributed in a fan shape and cover the wafer surface. Compared with point-like, linear, or single-point high-pressure impact spraying, this spraying method has a wider coverage area and a gentler impact characteristic, enabling the formation of a continuous and uniform solvent film across the entire wafer. This results in a more even distribution of heat and stress on the photoresist layer during chemical dissolution. Simultaneously, because the solvent front of the fan-shaped spray is relatively gentle, its impact on the formed metal layer and pattern structure is smaller, helping to reduce the risk of metal edge erosion or pattern structure damage, thus improving the integrity of the product's morphology and dimensional accuracy.

[0045] like Figure 2 As shown, in addition to spraying in a fan-shaped manner, the spray head 20 also swings back and forth in the horizontal direction via the swing arm 21.

[0046] Figure 3 This is a schematic diagram of the swing path of a spray head provided in an embodiment of this disclosure. Figure 3 As shown, driven by the swing arm 21, the spray head 20 swings in an arc within a certain angle range. The swing angle α of the spray head 20 can be less than or equal to 90°.

[0047] In the above implementation method, the problem of metal debris contamination generated during the metal stripping process is also well controlled. In related technologies, the immersion method often results in large pieces of metal floating in the solvent after stripping, posing a risk of re-adhesion to the wafer surface, thus affecting pattern quality and electrical performance. However, the spraying process, combined with stage rotation, enhances solvent flow, continuously flushing away dissolved products and metal debris, causing them to quickly detach from the wafer surface and be removed from the operating area, reducing the possibility of secondary contamination and further ensuring product cleanliness and yield.

[0048] For example, the stripping solvent includes N-methylpyrrolidone. N-methylpyrrolidone is a commonly used, highly efficient polar organic solvent with good solubility for a variety of photoresists, and is particularly suitable for scenarios requiring rapid and thorough removal of thick photoresist layers. Its moderate volatility and strong penetrability help to quickly soften and break down the photoresist molecular chains during the spraying process, accelerating the stripping process.

[0049] Optionally, the spraying process may include: performing a first spraying stage and a second spraying stage in sequence, wherein the oscillation frequency of the spray head in the first spraying stage is lower than the oscillation frequency of the spray head in the second spraying stage.

[0050] For example, in the first spraying phase, the spray head oscillates at a frequency of 3 to 8 seconds per cycle, for example, 5 seconds per cycle. The duration of the first spraying phase is 3 to 15 seconds, for example, 5 seconds.

[0051] For example, in the second spraying phase, the spray head oscillates at a frequency of 1 to 5 seconds per cycle, for example, 2 seconds per cycle.

[0052] In this embodiment of the disclosure, the staged spraying includes a first spraying stage with a low oscillation frequency and a second spraying stage with a high oscillation frequency.

[0053] In the first spraying stage, the spray head oscillates once every 3 to 8 seconds, with a total duration controlled between 3 and 15 seconds. The lower oscillation frequency, combined with the appropriate spraying time, allows the solvent to spread slowly and fully on the wafer surface, prioritizing the establishment of a basic dissolution environment globally. This gently initiates the swelling and softening process of the photoresist, helping to prevent uneven stripping of the pattern edges or excessive stress on the metal layer due to excessively rapid solvent impact in the initial stage.

[0054] In the second spraying stage, the oscillation frequency of the spray head is increased to once every 1 to 5 seconds. At this time, the photoresist is already in a swollen state. Increasing the spraying frequency can enhance the renewal and convection of the solvent on the wafer surface, accelerate the dissolution reaction, and quickly flush away the softened photoresist and metal debris from the surface, thereby improving the stripping efficiency and cleanliness.

[0055] In the above implementation method, this two-stage spraying method, which proceeds gradually from slow to fast, ensures the uniformity of initial wetting and the rate of subsequent reaction, which is conducive to achieving a highly consistent stripping effect on large-area wafers.

[0056] Optionally, the temperature of the stripping solvent is controlled to be between 80°C and 90°C. For example, the temperature of the stripping solvent is 90°C.

[0057] Controlling the stripping solvent temperature within the aforementioned range can enhance the chemical activity and dissolution rate of solvents such as NMP, accelerating the decomposition and desorption process of photoresist and shortening the overall processing time. Simultaneously, it can reduce solvent viscosity, making it easier to penetrate the micro-gaps between the photoresist and the wafer, strengthening its penetration ability into the inverted trapezoidal cross-section structure and reducing the risk of residue.

[0058] Optionally, the spray pressure of the shower head can be controlled from 800 psi to 1500 psi. For example, the spray pressure of the shower head is 1000 psi.

[0059] By controlling the spray pressure of the spray head within the aforementioned range, it is possible to ensure that the stripping solvent effectively covers and penetrates the patterned structure, while preventing excessive pressure from eroding the metal layer edges or causing the pattern to collapse. Appropriate spray pressure combined with a fan-shaped spray pattern can create a strong and uniform solvent flow field on the wafer surface, promoting dissolution and chip removal, and improving the integrity and cleanliness of the stripping process.

[0060] Optionally, a solvent with strong penetrating power can be used to soften the photoresist in the first spraying stage, and then switched to a solvent with stronger dissolving power or higher volatility in the second spraying stage to accelerate stripping and drying.

[0061] In the first spraying stage, a low-concentration mixture of NMP and water can be used, for example, NMP:H2O=7:3, or a small amount of alcohol (ethanol, isopropanol) can be added to reduce surface tension.

[0062] In the second spraying stage, high-concentration NMP (pure or near-pure) can be used. Its strong dissolving power and high boiling point make it suitable for high-temperature spraying. After the photoresist has softened sufficiently, the intermolecular forces are rapidly disrupted, causing it to disintegrate and detach from the wafer surface.

[0063] Step S13, controlling the rotation of the stage, may include the following steps: During the first spraying stage, the control platform stops rotating.

[0064] During this stage, the wafer is fixed stationary on the stage, and the spray head sprays a fan-shaped stripping solvent onto the entire wafer surface at a low oscillation frequency. Because the stage does not rotate, the solvent can form a relatively stable flow and coverage area on the wafer surface, allowing the photoresist, especially in the areas located on the sidewalls and bottom of the openings, to be uniformly wetted and swollen. For photoresist layers with an inverted trapezoidal cross-section structure that is wider at the top and narrower at the bottom, solvent penetration in a stationary state is more controllable. It can gradually penetrate into the interface between the photoresist and the wafer by relying on the concentration gradient and capillary action, initiating the softening process. Simultaneously, avoiding the shearing effect caused by rotation prevents breakage or premature stripping due to mechanical disturbance before the photoresist is fully dissolved, thereby reducing the risk of damage to the metal layer edges or residual photoresist.

[0065] In the second spraying stage, the platform is controlled to rotate at a set speed.

[0066] Optionally, the rotation speed can be set to 1000 rpm or higher. Example: The rotation speed is set to 1000 rpm. Setting the rotation speed above 1000 rpm ensures sufficient centrifugal force to overcome the adhesion between the photoresist and the metal layer, preventing incomplete peeling due to too low a speed or droplet spray due to too high a speed.

[0067] In the second spraying stage, the spray head oscillation frequency increases, enhancing the renewal and convection of the stripping solvent. At this point, the stage rotation is initiated, causing the wafer to rotate at a set speed of at least 1000 rpm, with the stage accelerating to an acceleration greater than or equal to 300 rpm / s. The centrifugal force generated by the rotation rapidly moves the dissolved or softened photoresist and its accompanying metal debris to the outer periphery, where continuous fan-shaped solvent flushing removes and disposes them from the wafer surface. This process strengthens physical removal, effectively overcoming the potential localized residue problems that may occur with chemical dissolution alone. The high-speed rotation also allows the solvent to penetrate deeper into the micro-gaps of the photoresist layer under inertial action, improving the completeness of the stripping.

[0068] This disclosure provides a stripping apparatus. This stripping apparatus is used to perform the metal stripping method as described above. Figure 2 As shown, the stripping device includes a platform 30 and a spray head 20.

[0069] Optionally, the surface of the stage 30 can be a vacuum adsorption platform, that is, a micropore array is arranged inside the stage 30 and connected to a vacuum system. When the wafer 10 is placed in the center of the stage 30, a negative pressure is formed by pumping air to firmly adsorb the wafer 10, preventing displacement or warping under spray liquid flow or rotation.

[0070] Optionally, the stage 30 can be connected to a rotary drive unit with variable speed control capability.

[0071] In the example selection, the rotary drive unit can be a servo motor or a stepper motor to achieve precise speed adjustment from standstill to high speed (≥800 rpm). The rotation of the motor can be transmitted to the spindle of the stage 30 through a coupling to ensure smooth operation and sufficient torque, and to avoid eccentricity or vibration during high-speed rotation.

[0072] Optionally, the platform 30 can be equipped with a controller that can monitor and feed back the rotation speed signal in real time to achieve closed-loop control, thereby ensuring complete stillness in the first spraying stage and rotation speed output in the second spraying stage.

[0073] In the example selection, the controller can be a PLC.

[0074] Optionally, a heating element can be embedded inside the stage 30, in conjunction with a temperature sensor, to uniformly heat the back side of the wafer 10 or the stage 30 body, reducing temperature fluctuations of the solvent when it comes into contact with the surface of the wafer 10, and improving the dissolution rate and consistency.

[0075] Optionally, a corrosion-resistant material layer may be provided on the surface of the stage 30. For example, the corrosion-resistant material layer may be made of stainless steel, Teflon-coated aluminum alloy, or ceramic composite material.

[0076] Optionally, the spray head 20 is equipped with a fan-shaped atomizing nozzle at its front end, which can convert the input liquid solvent into a flat fan-shaped spray to ensure that the coverage diameter is greater than the radius of the wafer 10, thereby achieving uniform spraying of the entire surface.

[0077] Optionally, the spray head 20 may be configured with an electric swing arm, which drives the spray head 20 to reciprocate above the wafer 10 during the spraying process.

[0078] Optionally, the spray head 20 can be connected to a thermostatic storage tank, which is equipped with a heating device and a temperature sensor to ensure that the stripping solvent reaches the set temperature before entering the nozzle.

[0079] The above is not intended to limit this disclosure in any way. Although this disclosure has been disclosed above through embodiments, it is not intended to limit this disclosure. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of this disclosure. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this disclosure without departing from the content of the technical solution of this disclosure shall still fall within the scope of the technical solution of this disclosure.

Claims

1. A method for metal stripping, characterized in that, The metal stripping method includes: A patterned photoresist layer is prepared on the wafer surface; A metal layer is deposited on the surface of the patterned photoresist layer; The entire wafer is sprayed with a stripping solvent to dissolve the photoresist layer and thus strip the metal layer.

2. The metal stripping method according to claim 1, characterized in that, The stripping solvent sprayed onto the entire wafer surface includes: The wafer is mounted on a carrier stage, and the carrier stage is rotated during the spraying process. The spray head sprays the stripping solvent onto the wafer from one edge to the other in a fan-shaped spray pattern.

3. The metal stripping method according to claim 2, characterized in that, The stripping solvent sprayed onto the entire wafer surface includes: The first spraying stage and the second spraying stage are performed sequentially. In the first spraying stage, the oscillation frequency of the spray head is lower than that in the second spraying stage.

4. The metal stripping method according to claim 3, characterized in that, In the first spraying phase, the spray head oscillates every 3 to 8 seconds, and the duration of the first spraying phase is 3 to 15 seconds. In the second spraying stage, the spray head oscillates at a frequency of 1 to 5 seconds each time.

5. The metal stripping method according to claim 3, characterized in that, Controlling the rotation of the platform during the spraying process includes: During the first spraying phase, the platform is controlled to stop rotating; In the second spraying stage, the platform is controlled to rotate at a set speed.

6. The metal stripping method according to claim 5, characterized in that, The set speed is greater than or equal to 1000 rpm.

7. The metal stripping method according to any one of claims 1 to 6, characterized in that, The stripping solvent sprayed onto the entire wafer surface includes: The temperature of the stripping solvent is controlled to be between 80°C and 90°C.

8. The metal stripping method according to any one of claims 2 to 6, characterized in that, The stripping solvent sprayed onto the entire wafer surface includes: The spray pressure of the spray head is controlled to be between 800 psi and 1500 psi.

9. The metal stripping method according to any one of claims 1 to 6, characterized in that, The stripping solvent includes N-methylpyrrolidone.

10. A peeling device, characterized in that, The stripping device is used to implement the metal stripping method as described in any one of claims 1 to 9, the stripping device comprising: a stage (30) and a spray head (20).

Images