Electronic component transfer device, semiconductor manufacturing device, and holder

Abstract

Embodiments of the present application relate to an electronic component transfer device, a semiconductor manufacturing apparatus, and a holder. According to one embodiment, an electronic component transfer device is provided with a collet and a holder. The collet has: a suction surface having a rectangular shape including a first edge portion extending in a first direction and a second edge portion extending in a second direction intersecting the first direction in a plan view, the suction surface sucking and holding an electronic component; a first side surface intersecting the suction surface along the first direction; and a second side surface intersecting the suction surface along the second direction. The holder has a first side wall abutting the first side surface and having a first height, and a second side wall abutting the second side surface and having a second height lower than the first height, the holder holding the collet.

Description

Technical Field

[0001] Embodiments of the present invention relate to electronic component transfer apparatus, semiconductor manufacturing apparatus, and holder. Background Technology

[0002] When using a transfer head with a collet to pick up electronic components, it may be difficult to pick up the electronic components properly if the collet's adsorption surface is bent. Summary of the Invention

[0003] The present invention provides an electronic component transfer device, a semiconductor manufacturing apparatus, and a holder capable of properly picking up electronic components.

[0004] According to one embodiment, an electronic component transfer device includes a clip and a holder. The clip has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding an electronic component; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along a second direction. The holder has a first sidewall contacting the first side surface and having a first height, and a second sidewall contacting the second side surface and having a second height lower than the first height, the holder holding the clip. Attached Figure Description

[0005] Figure 1 This is a diagram illustrating an example of the configuration of a semiconductor manufacturing apparatus according to the first embodiment.

[0006] Figure 2 This is a front view showing an example of the configuration of the transfer head according to the first embodiment.

[0007] Figure 3 This is a left view showing an example of the configuration of the transfer head according to the first embodiment.

[0008] Figure 4 This is a top view showing an example of the configuration of the transfer head according to the first embodiment.

[0009] Figure 5A This is a diagram illustrating a method for manufacturing a semiconductor device according to the first embodiment.

[0010] Figure 5B Is following Figure 5A The following figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0011] Figure 5C Is following Figure 5B The following figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0012] Figure 5D Is following Figure 5C The following figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0013] Figure 5E Is following Figure 5D The following figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0014] Figure 5F Is following Figure 5E The following figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0015] Figure 5G Is following Figure 5F The figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0016] Figure 5H Is following Figure 5G The following figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0017] Figure 5I Is following Figure 5H The following figure shows a method for manufacturing a semiconductor device according to the first embodiment.

[0018] Figure 6 This is a front view showing an example of the configuration of the transfer head involved in the comparative example.

[0019] Figure 7 This is a diagram illustrating a method for manufacturing a semiconductor device involved in a comparative example.

[0020] Figure 8 This is a diagram showing the amount of deflection of the adsorption surface of the adsorption clip in the transfer head according to the first embodiment of the first implementation.

[0021] Figure 9 This is a diagram showing the amount of deflection of the adsorption surface of the adsorption clip in the transfer head according to the second embodiment of the first embodiment.

[0022] Figure 10 This is a graph showing the amount of deflection of the adsorption surface of the adsorption clamp in the transfer head involved in the comparative example.

[0023] Figure 11 This is a front view showing the configuration of the transfer head according to the second embodiment.

[0024] Figure 12 This is a front view showing the configuration of the transfer head according to the third embodiment.

[0025] Figure 13This is a top view showing an example of the configuration of the transfer head according to the fourth embodiment.

[0026] Figure 14 This is a front view showing an example of the configuration of the transfer head according to the fifth embodiment.

[0027] Figure 15 This is a left view showing an example of the configuration of the transfer head according to the fifth embodiment.

[0028] Figure 16 This is a top view showing an example of the configuration of the transfer head according to the fifth embodiment.

[0029] Figure 17 This is a diagram showing the amount of deflection of the adsorption surface of the adsorption clamp in the transfer head according to the embodiment of the fifth embodiment.

[0030] Figure 18 This is a front view showing an example of the configuration of the transfer head involved in the comparative example.

[0031] Figure 19 This is a graph showing the amount of deflection of the adsorption surface of the adsorption clamp in the transfer head involved in the comparative example.

[0032] Explanation of reference numerals in the attached figures

[0033] 1: Transfer head; 2: Adsorption clamp; 21: First side; 22: Second side; 23: Adsorption surface; 3: Clamp holder; 31: First side wall; 32: Second side wall. Detailed Implementation

[0034] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. These embodiments do not limit the present invention. The drawings are schematic or conceptual, and the proportions of the parts may not be identical to reality. In the specification and drawings, the same reference numerals are used for elements that have been described with respect to the preceding drawings, and detailed descriptions are appropriately omitted.

[0035] (First Embodiment)

[0036] Figure 1 This diagram illustrates an example of the configuration of a semiconductor manufacturing apparatus according to the first embodiment. The semiconductor manufacturing apparatus includes a pickup device 10, a precision device 7, and a mounting device 8.

[0037] The pickup device 10 picks up a monolithic electronic component from the cutting tape DT. Hereinafter, the electronic component will be described using a semiconductor chip C. However, the electronic component is not limited to the semiconductor chip C.

[0038] The pickup device 10 includes a push mechanism 6, a wafer holding section 5, and a transfer head 1. The push mechanism 6 is an example of a push section. The wafer holding section 5 is an example of an electronic component holding section. The transfer head 1 is an example of an electronic component transfer device.

[0039] The push-up mechanism 6 is capable of pushing up multiple semiconductor chips C, monolithically formed from the semiconductor wafer W. For example, when viewed from a direction approximately perpendicular to the semiconductor wafer W, the semiconductor chip C is rectangular in shape. The push-up mechanism 6 is moved below the semiconductor chip C, which is the object to be picked up. The push-up mechanism 6 pushes the semiconductor chip C and the dicing tape upwards from below. The push-up mechanism 6 can also be configured as a multi-stage push-up mechanism capable of independently raising and lowering multiple push-up members. Figure 1 In the example shown, the pushing mechanism 6 has a central first pushing member 61, a second pushing member 62 disposed adjacent to the outer side of the first pushing member 61, and a third pushing member 63 disposed adjacent to the outer side of the second pushing member 62. The first to third pushing members 61 to 63 can rise and fall independently of each other. The second pushing member 62 can be disposed around the first pushing member 61 as a single configuration, surrounding the entire circumference of the first pushing member 61. Alternatively, the second pushing member 62 can also be disposed in the left-right direction ( Figure 1 The second push member 62 is divided along the d1 direction. When the second push member 62 is divided along the left-right direction, each of the divided second push members 62 can move up and down independently. Alternatively, the third push member 63 can be configured as a single component surrounding the second push member 62, encircling its entire circumference. Or, the third push member 63 can also be configured to be divided along the left-right direction. When the third push member 63 is divided along the left-right direction, each of the divided third push members 63 can move up and down independently.

[0040] A wafer holding section 5 is disposed around the push-up mechanism 6. The wafer holding section 5 holds the semiconductor chip C surrounding the semiconductor chip C pushed up by the push-up mechanism 6. The wafer holding section 5 has suction holes for adsorbing the back side of the dicing tape DT. The wafer holding section 5 is connected to a vacuum pump (not shown). The wafer holding section 5 holds the semiconductor chip C surrounding the semiconductor chip C, which is the object to be pushed up, by adsorption.

[0041] The transfer head 1 picks up the semiconductor chip C pushed up by the push mechanism 6 and transfers it. The transfer head 1 includes an adsorption clamp 2 for adsorbing and holding the semiconductor chip C, and a clamp holder 3 for holding the adsorption clamp 2. The transfer head 1 can transfer a single semiconductor chip C at a time, for example. The transfer head 1 can also transfer multiple semiconductor chips C at a time. Further details about the transfer head 1 will be described later.

[0042] The precision device 7 holds the semiconductor chip C transferred by the transfer head 1. The precision device 7 holds the semiconductor chip C, for example, by adsorption. By including the precision device 7, the pick-up and mounting operations of the semiconductor chip C can be performed independently. This reduces the process time required for pick-up and mounting.

[0043] The precision device 7 is capable of switching between a held state and a non-held state of the semiconductor chip C. The precision device 7 has multiple adsorption sections (not shown) capable of adsorbing the semiconductor chip C. The adsorption sections (e.g., adsorption orifices) are connected to a vacuum pump (not shown).

[0044] The mounting device 8 places the semiconductor chip C onto the substrate. Hereinafter, the substrate will be described using a wiring substrate S. However, the substrate is not limited to the wiring substrate S.

[0045] The mounting device 8 has a mounting head 81.

[0046] The mounting head 81 adsorbs the semiconductor chip C held in the precision device 7 and mounts the adsorbed semiconductor chip C onto the wiring substrate S. Similar to the transfer head 1, the mounting head 81 has, for example, an adsorption clip and a clip holder.

[0047] Next, the detailed structure of the transfer head 1 will be explained.

[0048] Figure 2 This is a front view showing an example of the configuration of the transfer head 1 according to the first embodiment. Figure 3 This is a left view showing an example of the configuration of the transfer head 1 according to the first embodiment. Figure 4 This is a top view showing an example of the configuration of the transfer head 1 according to the first embodiment.

[0049] like Figures 2 to 4 As shown, the transfer head 1 includes the aforementioned adsorption clip 2 and clip holder 3. The adsorption clip 2 is an example of a clip. The clip holder 3 is an example of a holder.

[0050] like Figure 4 As shown, the adsorption clamp 2 has an adsorption surface 23, which has a rectangular shape when viewed from above. This rectangular shape includes a pair of first sides 23a extending in the X direction (an example of a first direction) and a pair of second sides 23b extending in the Y direction (an example of a second direction). The adsorption surface 23 adsorbs and holds the semiconductor chip C. Figure 4 In the example shown, the adsorption surface 23 is a rectangle with the first side 23a as the long side and the second side 23b as the short side. That is, in Figure 4In the example shown, the adsorption surface 23 is rectangular with the X direction as its longitudinal dimension. The adsorption clip 2 also has a first side surface 21 and a second side surface 22. The adsorption clip 2 is formed of resin, for example.

[0051] The first side surface 21 is configured to intersect (i.e., orthogonal) the adsorption surface 23 along the X direction. In other words, the first side surface 21 is configured to intersect the adsorption surface 23 along the Y direction. Figure 4 In the example shown, the first side surface 21 is connected to the adsorption surface 23 at the first edge 23a. Figure 3 In the example shown, the first side portion 23a corresponds to the upper end of the first side surface 21. More specifically, with the direction orthogonal to the X and Y directions defined as the Z direction, the first side surface 21 is arranged along the XZ plane. The Z direction is an example of a third direction. The first side surface 21 is arranged in a pair at intervals in the Y direction.

[0052] The second side surface 22 is configured to intersect the adsorption surface 23 along the Y direction. In other words, the second side surface 22 is configured to intersect the adsorption surface 23 along the X direction. Figure 4 In the example shown, the second side surface 22 is connected to the adsorption surface 23 at the second edge 23b. Figure 2 In the example shown, the second side 23b corresponds to the upper end of the second side 22. More specifically, the second side 22 is disposed along the YZ plane. A pair of second side 22 are disposed at intervals in the X direction. The Y-direction end of the second side 22 is connected to the X-direction end of the first side 21.

[0053] The adsorption surface 23 is configured to intersect with the first side surface 21 and the second side surface 23. An air intake 23c for attracting air is provided on the adsorption surface 23.

[0054] The adsorption surface 23 is a plane intersecting the first side surface 21 and the second side surface 23. This plane is not limited to a strictly flat plane with absolutely no height deviation, but also includes a substantially flat plane that sufficiently suppresses height deviation. If the adsorption surface 23 is deflected, a gap will be generated at some point between the adsorption clip 2 and the clip holder 3, since the volume of the adsorption clip 2 remains unchanged. This gap will cause adsorption leakage of the semiconductor chip C. In contrast, in the first embodiment, by making the adsorption surface 23 flat, the generation of a gap between the adsorption clip 2 and the clip holder 3 can be suppressed compared to the case where the adsorption surface 23 is deflected. Since the generation of the gap can be suppressed, adsorption leakage of the semiconductor chip C can be reduced.

[0055] With the adsorption clip 2 held in place by the clip holder 3, the height deviation of the adsorption surface 23 can be less than 70 μm. This height deviation can also be referred to as the maximum deviation of the height of the adsorption surface 23 from its reference height when the deflection of the adsorption surface 23 is zero. This height deviation can also be referred to as the maximum deflection of the adsorption surface 23. By keeping the height deviation of the adsorption surface 23 below 70 μm, deflection of the adsorption surface 23 can be suppressed. By suppressing the deflection of the adsorption surface 23, adsorption leakage of the semiconductor chip C can be reduced.

[0056] The adsorption surface 23 can also have a height deviation of less than 55 μm. By ensuring that the height deviation of the adsorption surface 23 is less than 55 μm, the deflection of the adsorption surface 23 can be further suppressed. By further suppressing the deflection of the adsorption surface 23, the adsorption leakage of the semiconductor chip C can be further reduced.

[0057] The collet retainer 3 includes a first sidewall 31 along the X direction, a second sidewall 32 along the Y direction, and a base 33. For example... Figure 5B As shown, the collet holder 3 also includes a cylindrical portion 34 connected to the base 33. Inside the cylindrical portion 34, a ventilation path 34a (i.e., an exhaust path) is provided that communicates with the suction port 23c of the adsorption collet 2. The end of the cylindrical portion 34 opposite to the adsorption collet 2 is connected to a vacuum pump (not shown).

[0058] The base 33 has a rectangle extending in the X direction when viewed from above. The base 33 has a predetermined thickness in the Z direction.

[0059] A pair of first sidewalls 31 are provided, extending upwards (i.e., in the Z direction) from their two end edges in the Y direction of the upper surface of the base 33. The first sidewalls 31 are in contact with the first side surface 21 of the adsorption clip 2. In the Z direction, the lower end of the first sidewall 31, which is in contact with the upper surface of the base 33, is at the same position as the lower end of the second sidewall 32, which is also in contact with the upper surface of the base 33. The first sidewall 31 has a first width W1h in the X direction. The first sidewall 31 has a first height H1 that is lower than the height of the adsorption surface 23 relative to the lower end of the first sidewall 31 (i.e., the lower end of the second sidewall 32). That is, the distance H1 from the lower end of the first sidewall 31 to the upper end of the first sidewall 31 is shorter than the distance from the lower end of the first sidewall 31 to the adsorption surface 23.

[0060] A pair of second sidewalls 32 are provided, extending upward (i.e., in the Z direction) from their two end edges in the X direction on the upper surface of the base 33. The second sidewalls 32 are in contact with the second side surface 22 of the adsorption clip 2. The second sidewalls 32 have a second width W2h in the Y direction that is smaller than the first width W1h. The second sidewalls 32 have a second height H2 that is lower than the first height H1. That is, the distance H2 from the lower end to the upper end of the second sidewall 32 is shorter than the distance H1 from the lower end to the upper end of the first sidewall 31.

[0061] The collet holder 3 holds the adsorption collet 2 within a space surrounded by the upper surface of the base 33, a pair of first sidewalls 31, and a pair of second sidewalls 32. The adsorption collet 2 is held in the collet holder 3 by being inserted into it. Because the height of the second sidewall 32 is lower than the height of the first sidewall 31, the deflection of the adsorption surface 23 caused by the insertion of the adsorption collet 2 into the collet holder 3 can be suppressed. By suppressing the deflection of the adsorption surface 23, adsorption leakage of the semiconductor chip C can be appropriately reduced.

[0062] exist Figure 2 As shown by the dashed line L, the second side surface 22 of the adsorption clip 2 may also be such that at least the upper portion adjacent to the adsorption surface 23 does not extend outward from the inner surface of the second sidewall 32. That is, when viewed from the Y direction, the second side surface 22 may also be such that at least the upper portion is located between the X-direction end of the first sidewall 31 and the inner surface of the second sidewall 32. By ensuring that the upper portion of the second side surface 22 does not extend outward from the inner surface of the second sidewall 23, the deflection of the adsorption surface 23 can be more effectively suppressed.

[0063] The second side 22 of the adsorption clip 2 can also be a plane along the inner surface of the second side wall 32 of the clip holder 3. By making the second side 22 a plane, the deflection of the adsorption surface 23 can be suppressed more effectively.

[0064] In the collet retainer 3, the second height H2 of the second sidewall 32 can be less than half the first height of the first sidewall 31. By making the second height H2 less than half the first height, deviations in the height of the adsorption surface 23 can be suppressed. For example, the deviation in the height of the adsorption surface 23 can be suppressed to less than 70 μm. As a result, the deflection of the adsorption surface 23 can be more appropriately suppressed.

[0065] The second height H2 can also be less than 1 / 3 of the first height H1. By making the second height H2 less than 1 / 3 of the first height, the deviation in the height of the adsorption surface 23 can be further suppressed. For example, the deviation in the height of the adsorption surface 23 can be suppressed to less than 55 μm. Thus, the deflection of the adsorption surface 23 can be more appropriately suppressed.

[0066] exist Figure 2 In the example shown, the upper end face 32a of the second sidewall 32 is a plane parallel to the XY plane. The second sidewall 32 as a whole has a second height H2.

[0067] exist Figures 2 to 4 In the example shown, in the X direction, the first width W1h of the first sidewall 31 of the collet holder 3 is shorter than the width W1c of the first side surface 21 of the adsorption collet 2. Furthermore, in the Y direction, the second width W1h of the second sidewall 32 of the collet holder 3 is shorter than the width W2c of the second side surface 22 of the adsorption collet 2. Because the first width W1h of the first sidewall 31 is shorter than the width W1c of the first side surface 21, and the second width W2h of the second sidewall 32 is shorter than the width W2c of the second side surface 22, the adsorption collet 2 can be easily inserted into the collet holder 3.

[0068] The configuration of the collet holder 3 of the transfer head 1 can also be applied to the collet holder of the mounting head 81.

[0069] Next, a method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus having the above-described configuration will be described.

[0070] Figure 5A This is a diagram illustrating a method for manufacturing a semiconductor device according to the first embodiment. First, as... Figure 5A As shown, a semiconductor wafer W is monolithically divided into multiple semiconductor chips C. The semiconductor wafer W is monolithically divided while being adhered to the dicing tape DT via an adhesive layer A.

[0071] Figure 5B Is following Figure 5A The following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. After the semiconductor wafer W is monolithically formed, the semiconductor chip C surrounding the semiconductor chip C, which is to be pushed upwards, is held by the wafer holding part 5. The holding of the semiconductor chip C is performed by adsorption by the wafer holding part 5.

[0072] After holding the semiconductor chips C surrounding the semiconductor chip C that are being pushed up, as Figure 5B As shown, the semiconductor chip C, which is the object to be pushed up, is pushed up by the pushing mechanism 6. Figure 5B The d2 direction indicates the direction of the upward push of the semiconductor chip C by the upward push mechanism 6.

[0073] At this time, the transfer head 1, via a vacuum pump (not shown), through the ventilation path 34a and the suction port 23c, adsorbs and picks up the semiconductor chip C on the adsorption surface 23 of the adsorption clamp 2. Furthermore, by suppressing the deflection of the adsorption surface 23 of the adsorption clamp 2, adsorption leakage can be suppressed, and the semiconductor chip C can be picked up appropriately.

[0074] In addition, Figure 5B In the example shown, the cutting strip DT around the first pushing member 61 is peeled off from the semiconductor chip C by raising the first pushing member 61. The action of peeling the cutting strip DT from the semiconductor chip C can also be performed in stages. For example, after first raising the upper ends of the first pushing member 61 and the second pushing member 62 to the same height and peeling off the cutting strip DT around the second pushing member 62, the cutting strip DT around the first pushing member 61 can be peeled off by further raising the upper end of the first pushing member 61. In addition, the pushing mechanism 6 can perform any action that can be achieved by independently raising and lowering the first to third pushing members 61 to 63.

[0075] Figure 5C Is following Figure 5B The following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. After picking up the semiconductor chip C, as... Figure 5C As shown, the semiconductor chip C is transferred onto the precision instrument 7 via the transfer head 1. Furthermore, in Figure 5C The diagram of ventilation path 34a is omitted in the text.

[0076] Figure 5D Is following Figure 5C The following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. After the semiconductor chip C is transferred, as... Figure 5D As shown, the semiconductor chip C is adsorbed by the mounting head 81. Furthermore, the precision device 7 stops (holds) the adsorption of the semiconductor chip C by the mounting head 81.

[0077] Figure 5E Is following Figure 5D The following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. After the semiconductor chip C is attached by the mounting head 81, as... Figure 5E As shown, a semiconductor chip C is mounted on a wiring substrate S.

[0078] Figure 5F Is following Figure 5E The following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. Figure 5F As shown, by repeatedly performing the process on multiple semiconductor chips C of different sizes and types... Figures 5A-5E The process involves mounting multiple monolithically mounted semiconductor chips C on a wiring substrate S. Figure 5A In the example shown, multiple semiconductor chips C are mounted on the wiring substrate S in a manner that stacks them in a direction that is substantially perpendicular to the wiring substrate S.

[0079] Figure 5G Is following Figure 5FThe following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. After mounting multiple semiconductor chips C, as... Figure 5G As shown, a bonding line BW is formed to electrically connect the wiring substrate S and the semiconductor chip C.

[0080] Figure 5H Is following Figure 5G The following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. After the bonding wire BW is formed, as... Figure 5H As shown, a molding resin M covering the semiconductor chip C and the bonding wire BW is formed on the wiring substrate S. Additionally, a metal bump B is formed on the lower surface of the wiring substrate S. The metal bump B is, for example, a solder ball.

[0081] Figure 5I Is following Figure 5H The following diagram illustrates a method for manufacturing a semiconductor device according to the first embodiment. After forming the molding resin M and the metal protrusion B, as... Figure 5I As shown, the semiconductor package is monolithically assembled. This completes the semiconductor device.

[0082] Figure 6 This is a front view showing an example of the configuration of the transfer head 1 involved in the comparative example. Figure 7 This is a diagram illustrating a method for manufacturing a semiconductor device according to a comparative example. If the height of the second sidewall 32 in the collet holder 3 is the same as the height of the first sidewall 31, in this case, the force by which the second sidewall 32 presses against the collet 2 during the step of inserting the collet 2 into the collet holder 3 will increase.

[0083] Specifically, when the four corners of the adsorption clip 2 are inserted into the clip holder 3 before the center of the adsorption clip 2, the force of the second side wall 32 pressing against the adsorption clip 2 will increase. As the force of the second side wall 32 pressing against the adsorption clip 2 increases, the reaction force of the second side 22 of the adsorption clip 2 pushing back against the second side wall 32 will also increase.

[0084] like Figure 6 As shown, due to the increased reaction force of the adsorption clamp 2, the convex deflection of the adsorption surface 23 will increase. Figure 7 As shown, due to the increased deflection of the adsorption surface 23, adsorption leakage occurs when picking up the semiconductor chip C.

[0085] In contrast, according to the first embodiment, as described above, in the collet holder 3, the height of the second sidewall 32 is lower than the height of the first sidewall 31. Because the second sidewall 32 is lower in height, the force exerted by the second sidewall 32 on the collet 2 can be reduced.

[0086] By reducing the force exerted by the second sidewall 32 on the adsorption clip 2, the reaction force of the second sidewall 22 of the adsorption clip 2 pushing back against the second sidewall 32 can be reduced. For example... Figure 2 As shown, by reducing the reaction force of the adsorption clamp 2, the deflection of the adsorption surface 23 can be suppressed. By suppressing the deflection of the adsorption surface 23, adsorption leakage can be suppressed when picking up the semiconductor chip C.

[0087] Next, an embodiment of the transfer head 1 according to the first embodiment will be described. Figure 8 This is a graph showing the measurement results of the deflection of the adsorption surface 23 of the adsorption clamp 2 in the transfer head 1 according to the first embodiment of the first implementation. Figure 9 This is a graph showing the measurement results of the deflection of the adsorption surface 23 of the adsorption clamp 2 in the transfer head 1 according to the second embodiment of the first embodiment. Figure 10 This is a graph showing the measurement results of the deflection of the adsorption surface 23 of the adsorption clamp 2 in the transfer head 1 involved in the comparative example. Figures 8 to 10 In the examples shown, the adsorption surfaces 23 are all rectangular with the X-direction as the longitudinal direction (see reference). Figure 4 ).

[0088] exist Figure 8 In the first embodiment shown, the second height H2 of the second sidewall 32 is half of the first height H1 of the first sidewall 31.

[0089] Figure 8 The horizontal axis shows the position of the adsorption clamp 2 in the X direction with reference to one end of the adsorption clamp 2 in the X direction (i.e., the long side direction). Figure 8 The vertical axis shows the deflection of the adsorption surface 23 corresponding to its position in the X direction of the adsorption sleeve 2. Figure 8 In the first embodiment shown, the deflection amount is defined as the deviation of the height of the adsorption surface 23 from the reference height 0 (μm) of the adsorption surface 23 when it is not deflected.

[0090] like Figure 8 As shown, when the height of the second sidewall 32 is set to 1 / 2 of the height of the first sidewall 31, the maximum deflection, which is the maximum value of the height of the adsorption surface 23, can be suppressed to αμm or less.

[0091] exist Figure 9 In the second embodiment shown, the second height H2 of the second sidewall 32 is 1 / 4 of the first height H1 of the first sidewall 31. Other conditions and definitions of terms used in the figures are consistent with... Figure 8 It's the same.

[0092] like Figure 9As shown, when the height of the second sidewall 32 is set to 1 / 4 of the height of the first sidewall 31, the maximum deflection of the adsorption surface 23 can be suppressed to below βμm (where β<α).

[0093] exist Figure 10 In the comparative example shown, the height of the second sidewall 32 is the same as the height of the first sidewall 31. Other conditions and definitions of terms used in the figures are consistent with... Figure 8 It's the same.

[0094] like Figure 10 As shown, when the height of the second sidewall 32 is the same as the height of the first sidewall 31, the maximum deflection of the adsorption surface 23 exceeds γμm (where γ>α).

[0095] according to Figures 8 to 10 The measurement results confirm that: [the results are consistent with...] Figure 10 Compared to the situation, in Figure 8 In this case, the adsorption surface 23 is closer to a planar shape than a convex shape. Additionally, with... Figure 8 Compared to the situation, in Figure 9 In this case, the adsorption surface 23 is closer to a planar shape than a convex shape. That is, according to Figures 8 to 10 The measurement results confirm that by making the height of the second sidewall 32 lower than the height of the first sidewall 31, the deflection of the adsorption surface 23 can be suppressed. More specifically, it confirms that by setting the height of the second sidewall 32 to half the height of the first sidewall 31, compared to the case where the height of the second sidewall 32 is the same as the height of the first sidewall 31, the deviation in the height of the adsorption surface 23 can be suppressed. Furthermore, it confirms that by setting the height of the second sidewall 32 to one-quarter of the height of the first sidewall 31, compared to the case where the height of the second sidewall 32 is half the height of the first sidewall 31, the deviation in the height of the adsorption surface 23 can be further suppressed.

[0096] As explained above, according to the first embodiment, by making the second height H2 of the second sidewall 32 lower than the first height H1 of the first sidewall 31 in the collet holder 3, the deflection of the adsorption surface 23 can be suppressed. Therefore, adsorption leakage of the semiconductor chip C can be suppressed, and the semiconductor chip C can be properly picked up.

[0097] (Second Implementation)

[0098] Next, a second embodiment in which the upper end surface 32a of the second sidewall 32 is inclined will be described, focusing on the differences from the above embodiment.

[0099] Figure 11This is a front view showing the configuration of the transfer head 1 according to the second embodiment. Previously, an example of a transfer head 1 in which the upper end surface 32a of the second sidewall 32 is flat was described. In contrast, in the second embodiment, the upper end surface 32a of the second sidewall 32 is inclined. The second sidewall 32 locally has a second height that is lower than the first height of the first sidewall 31.

[0100] exist Figure 11 In the example shown, the inclined surface of the upper end face 32a constituting the second sidewall 32 slopes downwards towards the second side face 22 of the adsorption clip 2. Figure 11 In the example shown, the height of the uppermost part of the outermost upper end face 32a of the second side wall 32 is the same as the height of the first side wall 31. The height of the upper end face 32a other than the uppermost part is lower than the height of the first side wall 31. The height of the short side wall (i.e., the inner end of the upper end face 32a) of the second side wall 32 that contacts the second side surface 22 of the adsorption clip 2 can be the same as the second height H2 of the second side wall 32 shown in the first embodiment. In the case where the upper end face 32a is inclined or has a step as described later, a gap G is formed between the long side wall (i.e., the outer end of the upper end face 32a) of the second side wall 32 furthest from the second side surface 22 and the second side surface 22. When the adsorption clip 2 is inserted into the clip holder 3, the lower end portion of the adsorption clip 2 is pressed and can escape into the gap G. By escaping through the pressure on the lower end of the adsorption clamp 2, deformation of the upper adsorption surface 23 of the adsorption clamp 2 can be absorbed. Thus, the deflection of the adsorption surface 23 can be more effectively suppressed.

[0101] According to the second embodiment, by making the upper end surface 32a of the second sidewall 32 an inclined surface, the height of the second sidewall 32 can be locally made lower than the first height of the first sidewall 31. Therefore, the force of the second sidewall 32 pressing against the adsorption clip 2 and the reaction force of the second side surface 22 pushing back against the second sidewall 32 can be reduced, similar to the first embodiment, thus suppressing the deflection of the adsorption surface 23. Therefore, in the second embodiment, adsorption leakage can also be suppressed when picking up the semiconductor chip C.

[0102] Furthermore, according to the second embodiment, the opening for inserting the adsorption clip 2 can be expanded by the inclined upper end surface 32a. This facilitates the assembly of the adsorption clip 2 into the clip holder 3 while suppressing the deflection of the adsorption surface 23.

[0103] (Third Implementation)

[0104] Next, a third embodiment in which the upper end surface 32a of the second sidewall 32 is a stepped surface will be described, focusing on the differences from the embodiment described above.

[0105] Figure 12This is a front view showing the configuration of the transfer head 1 according to the third embodiment. In the third embodiment, the upper end surface 32a of the second sidewall 32 is a stepped surface. The second sidewall 32 locally has a second height that is lower than the first height of the first sidewall 31.

[0106] exist Figure 12 In the example shown, the stepped surface of the upper end face 32a constituting the second sidewall 32 has a step that reduces the height of the second sidewall 22. Figure 12 In the example shown, the height of the upper end face 32a of the outer portion is the same as the height of the first sidewall 31. Conversely, the height of the upper end face 32a of the inner portion is lower than the height of the first sidewall 31.

[0107] According to the third embodiment, by making the upper end surface 32a of the second sidewall 32 a stepped surface, the height of the second sidewall 32 can be locally made lower than the first height of the first sidewall 31. Therefore, similar to the first embodiment, the force of the second sidewall 32 pressing against the adsorption clip 2 and the reaction force of the second side surface 22 pushing back against the second sidewall 32 can be reduced, thus suppressing the deflection of the adsorption surface 23. Therefore, in the third embodiment, adsorption leakage can also be suppressed when picking up the semiconductor chip C.

[0108] Furthermore, according to the third embodiment, the opening for inserting the adsorption clip 2 can be expanded by the stepped upper end surface 32a. This facilitates the assembly of the adsorption clip 2 into the clip holder 3 while suppressing the deflection of the adsorption surface 23.

[0109] (Fourth implementation)

[0110] Next, a fourth embodiment in which the adsorption surface 23 of the adsorption clip 2 is square will be described, focusing on the differences from the embodiments described above.

[0111] Figure 13 This is a top view showing an example of the configuration of the transfer head according to the fourth embodiment. Previously, an example of an adsorption clip 2 with a rectangular adsorption surface 23 was described. In contrast, in the fourth embodiment, the adsorption surface 23 of the adsorption clip 2 is square. That is, in the fourth embodiment, the length of the first side 23a and the length of the second side 23b are the same. In other words, the dimension in the X direction of the first side 21 is the same as the dimension in the Y direction of the second side 22. Furthermore, the dimension in the X direction of the first sidewall 31 is the same as the dimension in the Y direction of the second sidewall 32. Other configurations are the same as in the first embodiment. For example, the fourth embodiment also... Figure 2 Similarly, the second height H2 of the second sidewall 32 is lower than the first height H1 of the first sidewall 31. Additionally, in Figure 13In the example shown, the second width W2h of the second sidewall 32 is smaller than the first width W1h of the first sidewall 31.

[0112] In the fourth embodiment, the deflection of the adsorption surface 23 can also be suppressed by making the second height H2 of the second sidewall 32 lower than the first height H1 of the first sidewall 31. In addition, the degree of freedom in the shape of the adsorption clip 2 can be increased.

[0113] (Fifth Embodiment)

[0114] Next, a fifth embodiment of the collet retainer 3 that does not have a second sidewall 32 will be described, focusing on the differences from the embodiments described above.

[0115] Figure 14 This is a front view showing an example of the configuration of the transfer head 1 according to the fifth embodiment. Figure 15 This is a left view showing an example of the configuration of the transfer head 1 according to the fifth embodiment. Figure 16 This is a top view showing an example of the configuration of the transfer head 1 according to the fifth embodiment.

[0116] like Figures 14 to 16 As shown, the collet holder 3 in the fifth embodiment has a first sidewall 31 but no second sidewall 32. In other words, the collet holder 3 has a flat surface 33a adjacent to the second side surface 22 of the adsorption collet 2. The position of the flat surface 33a in the Z direction is the same as the position of the lower end of the first sidewall 31 in the Z direction.

[0117] In the X direction, the width W1h of the first sidewall 31 is greater than or equal to the width W1c of the first sidewall 21. Because the width W1h of the first sidewall 31 is greater than or equal to the width W1c of the first sidewall 21, the first sidewall 31 can connect with both ends of the first sidewall 21 of the adsorption clip 2 in the X direction. By connecting the first sidewall 31 with both ends of the first sidewall 21 of the adsorption clip 2 in the X direction, the first sidewall 31 can appropriately hold both ends of the adsorption clip 2 in the X direction even without the second sidewall 32. By appropriately holding both ends of the adsorption clip 2 in the X direction even without the second sidewall 32, the deflection of the adsorption surface 23 caused by the insertion of the adsorption clip 2 into the clip holder 3 can be suppressed. Therefore, adsorption leakage of the semiconductor chip C can be appropriately reduced.

[0118] Figure 17This is a diagram showing the amount of deflection of the adsorption surface 23 of the adsorption clamp 2 in the transfer head 1 according to the fifth embodiment. Furthermore, in the fifth embodiment, since the second sidewall 32 is absent, deflection of the adsorption surface 23 occurs in the direction that causes a central depression in the adsorption surface 23. Therefore, unlike the embodiments described above, in the fifth embodiment, the maximum deflection is defined as the minimum value of the height of the adsorption surface 23. For example, as... Figure 17 As shown, according to the fifth embodiment, since the width W1h of the first sidewall 31 is greater than or equal to the width W1c of the first sidewall 21, the maximum deflection, which is the minimum value of the height of the adsorption surface 23, can be suppressed to δμm or less.

[0119] Figure 18 This is a front view showing an example of the configuration of the transfer head 1 involved in the comparative example. Figure 19 This is a diagram showing the deflection of the adsorption surface 23 of the adsorption clamp 2 in the transfer head 1 involved in the comparative example. On the other hand, in Figure 18 In the example shown, the width W1h of the first sidewall 31 is smaller than the width W1c of the first sidewall 21. Because the width W1h of the first sidewall 31 is smaller than the width W1c of the first sidewall 21, the first sidewall 31 cannot connect with the two ends of the adsorption clamp 2 in the X direction. Therefore, the first sidewall 31 cannot properly hold the two ends of the adsorption clamp 2 in the X direction. Because it is difficult to hold the two ends of the adsorption clamp 2, the two ends of the adsorption clamp 2 deform in a way that protrudes upwards. Therefore, in Figure 18 In the example shown, a deflection occurs at the adsorption surface 23, where the height decreases at the center and increases at both ends in the X direction. For example, as... Figure 19 As shown, Figure 18 The maximum deflection of the transfer head 1 shown exceeds εμm (ε>δ).

[0120] exist Figures 14 to 16 In the example described, an adsorption clamp 2 with a rectangular adsorption surface 23 is illustrated. In contrast, with... Figure 13 Similarly, in the fifth embodiment, the adsorption surface 23 may also be square.

[0121] According to the fifth embodiment, the deflection of the adsorption surface 23 can be suppressed even when the second sidewall is not present.

[0122] The foregoing has described several embodiments of the present invention, but these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in a wide variety of other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention, and likewise within the scope of the invention as described in the claims and its equivalents.

[0123] (Postscript)

[0124] (1) An electronic component transfer device, comprising a collet and a holder.

[0125] The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction.

[0126] The retainer has a first sidewall that is in contact with the first side and has a first height, and a second sidewall that is in contact with the second side and has a second height that is lower than the first height, and the retainer retains the collet.

[0127] (2) The electronic component transfer device according to (1),

[0128] The adsorption surface is a plane that intersects the first side surface and the second side surface.

[0129] (3) The electronic component transfer device according to (1),

[0130] When viewed from the second direction, at least the portion of the upper side adjacent to the adsorption surface of the second sidewall is located between the end of the first sidewall in the first direction and the inner surface of the second sidewall.

[0131] (4) The electronic component transfer device according to (2),

[0132] The second side is a plane along the inner surface of the second sidewall.

[0133] (5) The electronic component transfer device according to (1),

[0134] The second height is less than half of the first height.

[0135] (6) The electronic component transfer device according to (5),

[0136] The second height is less than 1 / 3 of the first height.

[0137] (7) The electronic component transfer device according to (1),

[0138] The upper surface of the second sidewall is a plane, and the second sidewall as a whole has the second height.

[0139] (8) The electronic component transfer device according to (1),

[0140] The upper surface of the second sidewall is an inclined surface, and the second sidewall locally has the second height.

[0141] (9) The electronic component transfer device according to (8),

[0142] The ramp slopes in such a way that its height decreases towards the second side.

[0143] (10) The electronic component transfer device according to (1),

[0144] The upper surface of the second sidewall is a stepped surface, and the second sidewall partially has the second height.

[0145] (11) The electronic component transfer device according to (10),

[0146] The stepped surface has a step that reduces the height of the second side surface.

[0147] (12) The electronic component transfer device according to (1),

[0148] In the first direction, the width of the first sidewall is shorter than the width of the first side surface.

[0149] In the second direction, the width of the second sidewall is shorter than the width of the second side surface.

[0150] (13) The electronic component transfer device according to (1),

[0151] The rectangle is rectangular in shape.

[0152] The first direction is the direction of the longer side of the rectangle.

[0153] The second direction is the direction of the shorter side of the rectangle.

[0154] (14) The electronic component transfer device according to (1),

[0155] The rectangle is square in shape.

[0156] (15) The electronic component transfer device according to any one of (1) to (14),

[0157] The electronic component is a semiconductor chip.

[0158] (16) An electronic component transfer device, comprising a collet and a holder.

[0159] The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction.

[0160] The retainer holds the collet.

[0161] The retainer has a rectangular shape and a first sidewall along the first direction.

[0162] In the first direction, the width of the first sidewall is greater than or equal to the width of the first side surface.

[0163] (17) The electronic component transfer device according to (16),

[0164] The rectangle is rectangular in shape.

[0165] The first direction is the direction of the longer side of the rectangle.

[0166] The second direction is the direction of the shorter side of the rectangle.

[0167] (18) The electronic component transfer device according to (16),

[0168] The rectangle is square in shape.

[0169] (19) The electronic component transfer device according to (16),

[0170] The retainer also has a flat surface adjacent to the second side surface.

[0171] The position of the flat surface in the third direction, which intersects the first and second directions, is the same as the position of the lower end of the first sidewall in the third direction.

[0172] (20) The electronic component transfer device according to any one of (16) to (19),

[0173] The electronic component is a semiconductor chip.

[0174] (21) A semiconductor manufacturing apparatus, comprising:

[0175] Electronic component holding part;

[0176] An upward pushing portion that pushes the electronic component held in the electronic component holding portion upward; and

[0177] An electronic component transfer device that transfers the electronic component by means of the upward push portion.

[0178] The electronic component transfer device includes a clamp and a holder.

[0179] The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction.

[0180] The retainer has a first sidewall that is in contact with the first side and has a first height, and a second sidewall that is in contact with the second side and has a second height that is lower than the first height, and the retainer retains the collet.

[0181] (22) The semiconductor manufacturing apparatus according to (21),

[0182] The adsorption surface is a plane that intersects the first side surface and the second side surface.

[0183] (23) The semiconductor manufacturing apparatus according to (21),

[0184] When viewed from the second direction, at least the portion of the upper side adjacent to the adsorption surface of the second sidewall is located between the end of the first sidewall in the first direction and the inner surface of the second sidewall.

[0185] (24) The semiconductor manufacturing apparatus according to (22),

[0186] The second side is a plane along the inner surface of the second sidewall.

[0187] (25) The semiconductor manufacturing apparatus according to (21),

[0188] The second height is less than half of the first height.

[0189] (26) The semiconductor manufacturing apparatus according to (25),

[0190] The second height is less than 1 / 3 of the first height.

[0191] (27) The semiconductor manufacturing apparatus according to (21),

[0192] The upper surface of the second sidewall is a plane, and the second sidewall as a whole has the second height.

[0193] (28) The semiconductor manufacturing apparatus according to (21),

[0194] The upper surface of the second sidewall is an inclined surface, and the second sidewall locally has the second height.

[0195] (29) The semiconductor manufacturing apparatus according to (28),

[0196] The ramp slopes in such a way that its height decreases towards the second side.

[0197] (30) The semiconductor manufacturing apparatus according to (21),

[0198] The upper surface of the second sidewall is a stepped surface, and the second sidewall partially has the second height.

[0199] (31) The semiconductor manufacturing apparatus according to (30)

[0200] The stepped surface has a step that reduces the height of the second side surface.

[0201] (32) The semiconductor manufacturing apparatus according to (21),

[0202] In the first direction, the width of the first sidewall is shorter than the width of the first side surface.

[0203] In the second direction, the width of the second sidewall is shorter than the width of the second side surface.

[0204] (33) The semiconductor manufacturing apparatus according to (21),

[0205] The rectangle is rectangular in shape.

[0206] The first direction is the direction of the longer side of the rectangle.

[0207] The second direction is the direction of the shorter side of the rectangle.

[0208] (34) The semiconductor manufacturing apparatus according to (21)

[0209] The rectangle is square in shape.

[0210] (35) The semiconductor manufacturing apparatus according to any one of (21) to (34),

[0211] The electronic component is a semiconductor chip.

[0212] (36) A semiconductor manufacturing apparatus, comprising:

[0213] Electronic component holding part;

[0214] An upward pushing portion that pushes the electronic component held in the electronic component holding portion upward; and

[0215] An electronic component transfer device that transfers the electronic component by means of the upward push portion.

[0216] The electronic component transfer device includes a clamp and a holder.

[0217] The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction.

[0218] The retainer holds the collet.

[0219] The retainer has a rectangular shape and a first sidewall along the first direction.

[0220] In the first direction, the width of the first sidewall is greater than or equal to the width of the first side surface.

[0221] (37) The semiconductor manufacturing apparatus according to (36),

[0222] The rectangle is rectangular in shape.

[0223] The first direction is the direction of the longer side of the rectangle.

[0224] The second direction is the direction of the shorter side of the rectangle.

[0225] (38) The semiconductor manufacturing apparatus according to (36),

[0226] The rectangle is square in shape.

[0227] (39) The semiconductor manufacturing apparatus according to (36),

[0228] The retainer also has a flat surface adjacent to the second side surface.

[0229] The position of the flat surface in the third direction, which intersects the first and second directions, is the same as the position of the lower end of the first sidewall in the third direction.

[0230] (40) The semiconductor manufacturing apparatus according to any one of (36) to (39),

[0231] The electronic component is a semiconductor chip.

[0232] (41) A retainer for holding a collet.

[0233] The retainer has a rectangular shape and has a first sidewall along a first direction and a second sidewall along a second direction intersecting the first direction.

[0234] The first sidewall has a first width in the first direction and a first height in the third direction, which intersects the first and second directions.

[0235] The second sidewall has a second width that is smaller than the first width in the second direction, and a second height that is lower than the first height in the third direction.

[0236] (42) The retainer according to (41),

[0237] The second height is less than half of the first height.

[0238] (43) The retainer according to (42),

[0239] The second height is less than 1 / 3 of the first height.

[0240] (44) The retainer according to (41),

[0241] The upper surface of the second sidewall is a plane, and the second sidewall as a whole has the second height.

[0242] (45) The retainer according to (41),

[0243] The upper surface of the second sidewall is an inclined surface, and the second sidewall locally has the second height.

[0244] (46) The retainer according to (45),

[0245] The ramp slopes in such a way that its height decreases towards the second side.

[0246] (47) The retainer according to (41),

[0247] The upper surface of the second sidewall is a stepped surface, and the second sidewall partially has the second height.

[0248] (48) The retainer according to (47),

[0249] The stepped surface has a step that reduces the height of the second side surface.

[0250] (49) The retainer according to (41),

[0251] The rectangle is rectangular in shape.

[0252] The first direction is the direction of the longer side of the rectangle.

[0253] The second direction is the direction of the shorter side of the rectangle.

[0254] (50) The retainer according to (41),

[0255] The rectangle is square in shape.

[0256] (51) The retainer according to any one of (41) to (50),

[0257] The electronic component is a semiconductor chip.

[0258] (52) A retainer for holding a collet.

[0259] The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction.

[0260] The retainer has a rectangular shape and a first sidewall along the first direction.

[0261] In the first direction, the width of the first sidewall is greater than or equal to the width of the first side surface.

[0262] (53) The retainer according to (52),

[0263] The rectangle is rectangular in shape.

[0264] The first direction is the direction of the longer side of the rectangle.

[0265] The second direction is the direction of the shorter side of the rectangle.

[0266] (54) The retainer according to (52),

[0267] The rectangle is square in shape.

[0268] (55) The retainer according to (52),

[0269] It also has a flat surface adjacent to the second side.

[0270] The position of the flat surface in the third direction, which intersects the first and second directions, is the same as the position of the lower end of the first sidewall in the third direction.

[0271] (56) The retainer according to any one of (52) to (55),

[0272] The electronic component is a semiconductor chip.

Claims

1. An electronic component transfer device, comprising a collet and a holder, The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction. The retainer has a first sidewall that is in contact with the first side and has a first height, and a second sidewall that is in contact with the second side and has a second height that is lower than the first height, and the retainer retains the collet.

2. The electronic component transfer device according to claim 1, The adsorption surface is a plane that intersects the first side surface and the second side surface.

3. The electronic component transfer device according to claim 1, When viewed from the second direction, at least the portion of the upper side adjacent to the adsorption surface of the second sidewall is located between the end of the first sidewall in the first direction and the inner surface of the second sidewall.

4. The electronic component transfer device according to claim 2, The second side is a plane along the inner surface of the second sidewall.

5. The electronic component transfer device according to claim 1, The second height is less than half of the first height.

6. The electronic component transfer device according to claim 5, The second height is less than 1 / 3 of the first height.

7. The electronic component transfer device according to claim 1, The upper surface of the second sidewall is a plane, and the second sidewall as a whole has the second height.

8. The electronic component transfer device according to claim 1, The upper surface of the second sidewall is an inclined surface, and the second sidewall locally has the second height.

9. The electronic component transfer device according to claim 8, The ramp slopes in such a way that its height decreases towards the second side.

10. The electronic component transfer device according to claim 1, The upper surface of the second sidewall is a stepped surface, and the second sidewall partially has the second height.

11. The electronic component transfer device according to claim 10, The stepped surface has a step that reduces the height of the second side surface.

12. The electronic component transfer device according to claim 1, In the first direction, the width of the first sidewall is shorter than the width of the first side surface. In the second direction, the width of the second sidewall is shorter than the width of the second side surface.

13. The electronic component transfer device according to claim 1, The rectangle is rectangular in shape. The first direction is the direction of the longer side of the rectangle. The second direction is the direction of the shorter side of the rectangle.

14. The electronic component transfer device according to claim 1, The rectangle is square in shape.

15. The electronic component transfer device according to any one of claims 1 to 14, The electronic component is a semiconductor chip.

16. An electronic component transfer device, comprising a collet and a holder, The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction. The retainer holds the collet. The retainer has a rectangular shape and a first sidewall along the first direction. In the first direction, the width of the first sidewall is greater than or equal to the width of the first side surface.

17. A semiconductor manufacturing apparatus comprising: Electronic component holding part; An upward pushing portion that pushes the electronic component held in the electronic component holding portion upward; and An electronic component transfer device that transfers the electronic component by means of the upward push portion. The electronic component transfer device includes a clamp and a holder. The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction. The retainer has a first sidewall that is in contact with the first side and has a first height, and a second sidewall that is in contact with the second side and has a second height that is lower than the first height, and the retainer retains the collet.

18. A semiconductor manufacturing apparatus comprising: Electronic component holding part; An upward pushing portion that pushes the electronic component held in the electronic component holding portion upward; and An electronic component transfer device that transfers the electronic component by means of the upward push portion. The electronic component transfer device includes a clamp and a holder. The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction. The retainer holds the collet. The retainer has a rectangular shape and a first sidewall along the first direction. In the first direction, the width of the first sidewall is greater than or equal to the width of the first side surface.

19. A retainer for holding a collet. The retainer has a rectangular shape and has a first sidewall along a first direction and a second sidewall along a second direction intersecting the first direction. The first sidewall has a first width in the first direction and a first height in the third direction, which intersects the first and second directions. The second sidewall has a second width that is smaller than the first width in the second direction, and a second height that is lower than the first height in the third direction.

20. A retainer for holding a collet. The collet has: an adsorption surface, which, when viewed from above, has a rectangular shape including a first side extending in a first direction and a second side extending in a second direction intersecting the first direction, the adsorption surface adsorbing and holding electronic components; a first side surface intersecting the adsorption surface along the first direction; and a second side surface intersecting the adsorption surface along the second direction. The retainer has a rectangular shape and a first sidewall along the first direction. In the first direction, the width of the first sidewall is greater than or equal to the width of the first side surface.

21. The retainer according to claim 20, The rectangle is rectangular in shape. The first direction is the direction of the longer side of the rectangle. The second direction is the direction of the shorter side of the rectangle.

22. The retainer according to claim 20, The rectangle is square in shape.

23. The retainer according to claim 16, It also has a flat surface adjacent to the second side. The position of the flat surface in the third direction, which intersects the first and second directions, is the same as the position of the lower end of the first sidewall in the third direction.

24. The retainer according to any one of claims 20 to 23, The electronic component is a semiconductor chip.

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