Method of determining misalignment of semiconductor device

Abstract

According to an embodiment of this disclosure, a method for determining misalignment in a semiconductor device includes contacts arranged along a first direction and a second direction intersecting the first direction, and wiring connected to at least one of the contacts and spaced apart from each other along the first direction. The method may include: measuring a first distance between a first contact and a second contact that are adjacent to each other in the first direction; measuring a second distance between a side surface of a first wiring and a side surface of a first contact, wherein the first wiring is connected to the first contact; and determining whether misalignment exists based on the first distance and the second distance.

Description

Cross-reference to related applications

[0001] This application claims priority to Korean Patent Application No. 10-2025-0036531, filed on March 21, 2025, which is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure relates to a method for determining misalignment in a semiconductor device. Background Technology

[0003] Storage devices are gaining attention as crucial components in the electronics industry due to their characteristics such as miniaturization, versatility, and / or low manufacturing costs. As the electronics industry evolves, storage devices are becoming increasingly integrated, and the complexity of incorporating the various wirings and components within them is increasing. For example, as the size of the multiple wirings included in storage devices decreases and the distance between wirings decreases, an increase in associated defects, such as interference between wirings, has been observed. Summary of the Invention

[0004] This disclosure aims to provide a method for determining misalignment in a semiconductor device. The embodiments provide the ability to accurately identify the causes of misalignment between adjacent wirings.

[0005] The purposes of this disclosure are not limited to those set forth herein, and other purposes not mentioned will be apparent to those skilled in the art from the following description.

[0006] In one embodiment, a method for determining misalignment in a semiconductor device, the semiconductor device including contacts arranged along a first direction and a second direction intersecting the first direction, and wiring connected to at least one of the contacts and spaced apart from each other in the first direction, the method may include: measuring a first spacing between first and second contacts that are adjacent to each other in the first direction; measuring a second spacing between a side surface of a first wiring and a side surface of a first contact, wherein the first wiring is connected to the first contact; and determining whether misalignment exists based on the first spacing and the second spacing.

[0007] In one embodiment, a method for determining misalignment in a semiconductor device, the semiconductor device including a first contact and a second contact spaced apart from each other in a first direction by a first pitch, and a first wiring connected to the first contact, the first wiring having side surfaces facing each other in the first direction, the method may include: measuring a second pitch between a side surface of the first wiring farther from the first contact and a side surface of the first contact; and determining whether misalignment exists based on the first pitch and the second pitch.

[0008] According to embodiments of this disclosure, the ability to determine misalignment of a semiconductor device and accurately identify the cause of misalignment between adjacent wirings and / or contacts is provided.

[0009] The effects of this disclosure are not limited to the foregoing objectives, and other effects will be apparent to those skilled in the art from the following detailed description. Attached Figure Description

[0010] This disclosure will be more fully understood from the following detailed description and accompanying drawings, which are provided for illustration only and are not intended to limit the disclosure.

[0011] Figure 1 This is a flowchart illustrating an example of a method for determining misalignment of a semiconductor device according to an embodiment of the present disclosure.

[0012] Figure 2 This illustrates an embodiment according to the present disclosure. Figure 1 A flowchart illustrating an example of the misalignment determination step.

[0013] Figure 3 This illustrates an embodiment according to the present disclosure. Figure 1 A flowchart of another example of the misalignment determination step.

[0014] Figure 4 This is a view showing the planar structure of a semiconductor device according to an embodiment of the present disclosure.

[0015] Figures 5 to 7 This illustrates an embodiment of the present disclosure. Figure 4 The line I-I' indicates an example view of the cross-sectional structure of the portion.

[0016] Figure 8 This is a view illustrating an example of a semiconductor device according to an embodiment of this disclosure. Detailed Implementation

[0017] In the following description, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the following description, although the same elements are shown in different drawings, the same elements will be designated by the same reference numerals. Furthermore, in the following description of the present disclosure, detailed descriptions of known functions and configurations incorporated herein will be omitted where such omissions may make the subject matter of the disclosure considerably unclear. It should be noted that the terms “comprising,” “having,” “including,” etc., used in the specification and claims should not be construed as limiting to the means listed thereafter unless specifically stated otherwise. Where non-qualifying or qualifying words (e.g., “a,” “an,” and “the”) are used when referring to a singular noun, this may include the plural form of the noun unless specifically stated otherwise.

[0018] Furthermore, in describing the components of this disclosure, terms such as first, second, A, B, (a), and (b) may be used. These are merely for the purpose of distinguishing one component from another and are not intended to limit the subject, order, sequence, or number of components.

[0019] When referring to a first element as "connected or coupled to," "contact or overlapped to," etc., as a second element, it should be interpreted as meaning that not only can the first element be "directly connected or coupled to" or "directly contacted or overlapped to" the second element, but a third element can also be "intermediate" between the first and second elements, or the first and second elements can be "connected or coupled," "contacted or overlapped to" each other via a fourth element. Here, another component can be included in at least one of at least two components that are "connected," "coupled," or "linked" to each other.

[0020] In the description of the temporal flow relationship of components, operating methods, or manufacturing methods, non-continuous situations may be included where temporal or process-related relationships are described, for example, by "after," "following," "next," or "before," unless "immediately" or "directly" is used.

[0021] When a numerical value or its corresponding information (e.g., level, etc.) for a component is mentioned, even if there is no separate explicit description, the numerical value or its corresponding information can be interpreted as including a range of errors that may be caused by a variety of factors (e.g., process variables, internal or external shocks, noise, etc.).

[0022] Figure 1 This is a flowchart illustrating an example of a method for determining misalignment of a semiconductor device according to an embodiment of the present disclosure. Figure 2 It is shown Figure 1 A flowchart illustrating an example of the misalignment determination step. Figure 3 It is shown Figure 1 A flowchart of another example of the misalignment determination step.

[0023] refer to Figure 1 The method S100 for determining misalignment of a semiconductor device according to embodiments of the present disclosure may include a first pitch measurement step S110, a second pitch measurement step S120, and a misalignment determination step S130. The second pitch measurement step S120 may be performed after the first pitch measurement step S110, but is not limited thereto. The second pitch measurement step S120 may be performed before the first pitch measurement step S110, or may be performed at the same stage as the first pitch measurement step S110.

[0024] A semiconductor device according to embodiments of this disclosure may include contacts and one or more wirings connected to the contacts and spaced apart from each other. In this specification, a contact may refer to a structure extending in one direction (e.g., vertical) to connect structures disposed at different locations (e.g., different layers). In one embodiment, the contact may be a pillar having a circular or elliptical cross-section. The wiring may extend in one direction. In one embodiment, each wiring may be connected to at least one of the contacts.

[0025] In one embodiment of the present disclosure, a method S100 for determining misalignment in a semiconductor device may include determining whether misalignment exists between contacts and wiring included in the semiconductor device. For example, in the semiconductor device, wiring may be configured to connect to contacts after contacts are arranged. Wiring may be aligned based on the location where contacts are arranged. Misalignment between wiring and contacts may occur when the spacing between contacts does not match the spacing of wiring, for example, being too narrow or too wide. Even when the spacing between contacts is properly formed, one or more defects may occur during the wiring alignment process, causing misalignment between wiring and contacts.

[0026] The method S100 for determining misalignment of a semiconductor device according to an embodiment of the present disclosure can determine whether there is a misalignment between a contact and a wiring that occurs during the process of forming the semiconductor device, and the cause of the misalignment.

[0027] The first spacing measurement step S110 may include measuring a first spacing between a first contact and a second contact that are adjacent to each other among the contact elements. The first contact and the second contact may be different contact elements included in the contact elements.

[0028] In one embodiment, the first distance between the first contact and the second contact can be the minimum distance from the side surface of the first contact to the side surface of the second contact. For example, the first distance can be the minimum length of a line segment connecting a point on the side surface of the first contact and a point on the side surface of the second contact. For example, the first distance can be the distance between the upper surfaces of the first contact and the upper surfaces of the second contact.

[0029] The second spacing measurement step S120 may include measuring a second spacing between the side surface of the first wiring connected to the first contact and the side surface of the first contact. The first wiring may be any of the wirings included in the wiring.

[0030] In one embodiment, the second spacing may be the minimum distance between the side surface of the first wiring that is farther from the first contact connected to the first wiring and the side surface of the first contact. For example, when one of the side surfaces of the first wiring is configured to overlap with the first contact, the second spacing may be the minimum distance between the side surface of the first wiring that does not overlap with the first contact and the side surface of the first contact. Alternatively, when the first contact is located between the side surfaces of the first wiring, the second spacing may be the minimum distance between the side surface of the first wiring that is farther from the first contact and the side surface of the first contact.

[0031] In the misalignment determination step S130, misalignment can be determined by subtracting the second spacing from the first spacing to obtain a value (which can reflect the degree of misalignment).

[0032] refer to Figure 2 In one embodiment, the misalignment determination step S130 may include a step S310 of checking whether the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value. When it is found that the value obtained by subtracting the second spacing from the first spacing is less than or equal to the preset value (i.e., S310 - Yes), it can be determined that misalignment has occurred between the contact and the wiring (S321). Conversely, when it is found that the value obtained by subtracting the second spacing from the first spacing is greater than the preset value (i.e., S310 - No), it can be determined that misalignment has not yet occurred between the contact and the wiring (S322).

[0033] refer to Figure 3 In one embodiment, the misalignment determination step S130 may include a step S310 of checking whether the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value, and a step S421 of checking whether the first spacing is outside a preset range. When it is found that the value obtained by subtracting the second spacing from the first spacing is less than or equal to the preset value and the first spacing is outside the preset range (i.e., S421 - Yes), it can be determined that misalignment has occurred due to the contact or due to both the contact and the wiring (e.g., caused by the wiring) (S431). Conversely, when it is found that the value obtained by subtracting the second spacing from the first spacing is less than or equal to the preset value and the first spacing is within the preset range (i.e., S421 - No), it can be determined that misalignment has occurred due to the wiring (e.g., caused by the wiring) (S432). When the value obtained by subtracting the second spacing from the first spacing is greater than the preset value (i.e., S310 - No), it can be determined that misalignment has not yet occurred (S322).

[0034] Figure 4 This is a view illustrating an example of a planar structure of a semiconductor device according to an embodiment of the present disclosure. Figures 5 to 7 It is shown by Figure 4The line I-I' indicates an example view of the cross-sectional structure of the portion.

[0035] In the accompanying drawings, two directions parallel to the upper surface of the substrate are defined as the first direction FD and the second direction SD, respectively, and a direction projecting perpendicularly from the upper surface of the substrate is defined as the third direction VD. The first direction FD and the second direction SD may be substantially perpendicular to each other. The third direction VD is a direction perpendicular to the first direction FD and the second direction SD (e.g., in a manner that forms a three-dimensional (3D) axis). In the following description, the term "perpendicular" or "perpendicular direction" will be used to have the same meaning as the third direction VD. In the accompanying drawings, the direction indicated by the arrow and the direction opposite to it represent the same direction (i.e., along the same axis).

[0036] refer to Figure 4 and Figure 5 The semiconductor device may include a substrate 500, an interlayer insulating layer 501 on the substrate 500, landing pads 510, contacts 520, an insulating layer 530, and wiring 540. The landing pads 510 may include a first landing pad 511, a second landing pad 512, a third landing pad 513, and a fourth landing pad 514. The contacts 520 may include a first contact 521, a second contact 522, a third contact 523, and a fourth contact 524.

[0037] The landing pads 510 can be arranged along the first direction FD and the second direction SD. The landing pads 510 can be configured to be spaced apart from each other in the first direction FD and the second direction SD.

[0038] Contacts 520 can be disposed on landing pads 510. Each contact 520 can be configured to correspond to one of the landing pads 510. For example, a first contact 521 can be disposed on a first landing pad 511. A second contact 522 can be disposed on a second landing pad 512. The contacts 520 can be arranged along a first direction FD and a second direction SD. The contacts 520 can be configured to be spaced apart from each other in the first direction FD and the second direction SD. For example, the first contact 521 can be configured to be spaced apart from the second contact 522 in the first direction FD.

[0039] refer to Figure 5 In one embodiment, the width w1 of each contact 520 may be constant. For example, the width of the upper surface of each contact 520 may be the same as the width of its lower surface. For example, the side surfaces of the contact 520 may be substantially perpendicular to the upper surface of their corresponding landing pads 510. The corresponding upper surfaces of the contacts 520 may form substantially identical planes. For example, the upper surfaces of the first contact 521 and the second contact 522 may form substantially identical planes.

[0040] An insulating layer 530 and wiring 540 may be disposed on the contact 520. Wiring 540 may include a first wiring 541 and a second wiring 542. Each wiring 540 may be connected to at least one of the contacts 520. Figure 4 and Figure 5 In the example shown, the first wiring 541 can be connected to the first contact 521 and the third contact 523. The lower surface of the first wiring 541 can directly contact the upper surface of the first contact 521. The width of each wiring 540 in the first direction FD can be greater than the width w1 of each contact 520.

[0041] In one embodiment, the second side surface 541b of the first wiring 541 may overlap with the first contact 521. The upper surface of the first contact 521 may contact the first wiring 541 and the insulating layer 530. The first side surface 541a of the first wiring 541 may be spaced apart from the side surface of the first contact 521.

[0042] The landing pad 510, contact 520, and wiring 540 may include conductive materials such as metals, metal oxides, metal nitrides, metal silicides, polysilicon, conductive carbon, or combinations thereof. The insulating layer 530 may include silicon oxide, silicon nitride, silicon oxynitride, low-k dielectrics, high-k dielectrics, or combinations thereof.

[0043] In one embodiment, the first spacing between the contacts 520 may be the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522. For example, the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 may be the distance in the first direction FD between the upper surface of the first contact 521 and the upper surface of the second contact 522, or the distance in the first direction FD between the lower surface of the first contact 521 and the lower surface of the second contact 522.

[0044] In one embodiment, the distance between the side surface of the first contact 521 and the side surface of the second contact 522 can be measured after the first contact 521 and the second contact 522 are formed. For example, the distance between the upper surface of the first contact 521 and the upper surface of the second contact 522 can be measured on a planar image obtained using a device such as a scanning electron microscope (SEM).

[0045] In one embodiment, the second spacing may be the spacing between the side surface 541a and 541b of the first wiring 541 that is farther from the first contact 521 and the side surface of the first contact 521. For example, the second spacing may be the minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521. Therefore, the first side surface 541a of the first wiring 541 is farther from the side surface of the first contact 521 than the second side surface 541b is.

[0046] In one embodiment, the minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521 can be measured before the wiring 540 is formed. In one embodiment, the insulating layer 530 can be formed before the wiring 540. The wiring 540 can be formed to be disposed between portions of the insulating layer 530. The side surface of the wiring 540 can contact the side surface of a portion of the insulating layer 530. For example, the first side surface 541a of the first wiring 541 can contact a side surface of the insulating layer 530 adjacent to the first wiring 541. The minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521 can be the minimum distance between a side surface of the insulating layer 530 that contacts the first side surface 541a and the side surface of the first contact 521.

[0047] In one embodiment, the minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521 can be measured on a planar image obtained using a device such as a scanning electron microscope (SEM).

[0048] In one embodiment according to this disclosure, misalignment between the contact 520 and the wiring 540 can be determined based on a value obtained by subtracting a second spacing from a first spacing. For example, misalignment between the contact 520 and the wiring 540 can be determined by subtracting a minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521 from a minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522.

[0049] For example, when the value obtained by subtracting the minimum distance d2 between the first side surface 541a and the side surface of the first wiring 541 from the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is less than or equal to a reference value, it can be determined that the contact 520 and the wiring 540 are misaligned. For example, the reference value may be 15 nm. In one embodiment, when the value obtained by subtracting the minimum distance d2 between the first side surface 541a and the side surface of the first contact 521 from the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is less than the reference value, the first wiring 541 may be short-circuited with the second contact 522. In this case, because the first wiring 541 is connected to both the first contact 521 and the second contact 522, defects may occur when transmitting signals or supplying voltage through the first wiring 541. Therefore, if the value obtained by subtracting the minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521 from the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is less than or equal to the reference value, it can be determined that the contact 520 and the wiring 540 are misaligned.

[0050] In one embodiment according to this disclosure, when the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value and the first spacing is within a preset range, it can be determined that misalignment caused by the wiring 540 has occurred between the contact 520 and the wiring 540. When the value obtained by subtracting the second spacing from the first spacing is less than or equal to the preset value and the first spacing is outside the preset range, it can be determined that misalignment caused by the contact 520 has occurred between the contact 520 and the wiring 540, or it can be determined that the misalignment is caused by both the contact 520 and the wiring 540.

[0051] For example, when the value obtained by subtracting the minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521 from the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is less than or equal to a reference value, and the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is within a preset range, it can be determined that misalignment has occurred between the contact 520 and the wiring 540 due to the wiring 540. For example, the preset range can be 100nm to 110nm. That is, when the contact 520 is correctly aligned with the landing pad 510, but the wiring 540 is not correctly aligned on the contact 520, it can be determined that misalignment has occurred between the contact 520 and the wiring 540.

[0052] Conversely, for example, when the value obtained by subtracting the minimum distance d2 between the first side surface 541a of the first wiring 541 and the side surface of the first contact 521 from the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is less than or equal to the reference value, and the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is outside the preset range, it can be determined that misalignment has occurred between the contact 520 and the wiring 540 due to the wiring 540 or due to both the contact 520 and the wiring 540.

[0053] For example, when the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is less than a preset range, it can be determined that misalignment of the contact 520 has occurred between the contact 520 and the wiring 540. In other words, it can be determined that misalignment has occurred between the contact 520 and the wiring 540 because the contact 520 is not properly aligned on the landing pad 510.

[0054] When the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522 is greater than a preset range, it can be determined that misalignment has occurred between the contact 520 and the wiring 540. In other words, it can be determined that misalignment has occurred between the contact 520 and the wiring 540 because the contact 520 is not properly aligned on the landing pad 510 and the wiring 540 is not properly aligned on the contact 520.

[0055] refer to Figure 6 Each contact 520 can be configured to be located between the side surfaces of each wiring 540 in the first direction FD. For example, a first contact 521 can be located between the side surfaces 541a and 541b of the first wiring 541 in the first direction FD. The distance from the first side surface 541a of the first wiring 541 to the side surface of the first contact 521 can be greater than the distance from the second side surface 541b of the first wiring 541 to the side surface of the first contact 521.

[0056] The first spacing between the contacts 520 can be referenced above. Figure 5The first spacing between the described contacts 520 is measured in the same manner. In one embodiment, the second spacing may be the minimum distance d2 between the side surfaces 541a and 541b of the first wiring 541 that are farther from the first contact 521 and the side surface of the first contact 521. Conversely, the second spacing may be the minimum distance between the second side surface 541b and the side surface of the first contact 521 when the distance from the first side surface 541a of the first wiring 541 to the side surface of the first contact 521 is less than the distance from the second side surface 541b of the first wiring 541 to the side surface of the first contact 521.

[0057] In one embodiment, the misalignment between the contact 520 and the wiring 540 can be determined by subtracting the minimum distance d2 between the first side surface 541a, which is farther from the first contact 521, and the side surface of the first contact 521 from the minimum distance d1 between the side surface of the first contact 521 and the side surface of the second contact 522.

[0058] refer to Figure 7 The width w3 of the upper surface of each contact 520 may be greater than the width w2 of the lower surface of each contact 520. For example, the width w3 of the upper surface of the first contact 521 may be greater than the width w2 of the lower surface of the first contact 521. The width of each contact 520 may increase as it moves away from the upper surface of the substrate 500 (i.e., measured further downward).

[0059] In one embodiment, the first spacing between the contacts 520 may be the minimum distance between the side surfaces of the first contact 521 and the second contact 522. For example, the first spacing between the contacts 520 may be the distance d1' between the upper surfaces of the first contact 521 and the upper surfaces of the second contact 522 in the first direction FD.

[0060] In one embodiment, the second spacing may be the spacing between the side surface of the first wiring 541 that is farther from the first contact 521 than the side surface of the first wiring 541. For example, the second spacing may be the minimum distance d2' in the first direction FD between the first side surface 541a of the first wiring 541 and the upper surface of the first contact 521.

[0061] In one embodiment, the misalignment between the contact 520 and the wiring 540 can be determined by subtracting the distance d2' between the first side surface 541a, which is farther from the first contact 521, and the side surface of the first contact 521 from the distance d1' between the upper surface of the first contact 521 and the upper surface of the second contact 522.

[0062] Figure 8 This is a view illustrating an example of a semiconductor device according to an embodiment of this disclosure. Figure 8 The semiconductor devices shown are examples of semiconductor devices according to this disclosure, and semiconductor devices according to this disclosure are not necessarily limited thereto.

[0063] refer to Figure 8 The semiconductor device according to embodiments of this disclosure may include a substrate 800, an interlayer insulating layer 810, a storage node contact 811, a first landing pad 812, a first peripheral contact 813, a second landing pad 814, an etch stop layer 815, a capacitor 820, a first support 817s, a second support 819s, a first insulating layer 830, a second insulating layer 840, a first contact plug 851, a second contact plug 861, a first wiring layer 870, and a second wiring layer 880. The capacitor 820 includes a lower electrode 821, a dielectric layer 822, and an upper electrode 823.

[0064] The first contact plug 851 corresponds to the above reference. Figures 1 to 7 Each contact 520 is described. The first wiring layer 870 can correspond to the above reference. Figures 1 to 7 The wiring described is 540.

[0065] After the first contact plug 851 is formed, a first distance d1" between the first contact plugs 851 can be measured. In one embodiment, the first distance d1" between the first contact plugs 851 can be the minimum distance from the side surface of one first contact plug 851 to the side surface of the other first contact plug 851.

[0066] After the second insulating layer 840 is formed on the first contact plug 851, a second distance d2" between a side surface of the first contact plug 851 and a side surface of the first wiring layer 870 can be measured. In one embodiment, the second distance d2" may be the minimum distance from the side surface of the first wiring layer 870 that is farther from the first contact plug 851 to the side surface of the first contact plug 851 (e.g., the minimum distance along a line from the side surface of the first wiring layer 870 to the side surface of the first contact plug 851, such as...). Figure 8 (As shown).

[0067] According to embodiments of this disclosure, misalignment between the first contact plug 851 and the first wiring layer 870 can be determined based on a value obtained by subtracting a second distance d2 from a first distance d1. For example, when the value obtained by subtracting the second distance d2 from the first distance d1 is less than or equal to a reference value, it can be determined that the first contact plug 851 and the first wiring layer 870 are misaligned. For example, the reference value can be 15 nm.

[0068] When the value obtained by subtracting the second distance d2 from the first distance d1" is less than or equal to the reference value and the first distance d1" is within a preset range, it can be determined that misalignment has occurred between the first contact plug 851 and the first wiring layer 870 due to the positioning or arrangement of the first wiring layer 870. When the value obtained by subtracting the second distance d2 from the first distance d1" is less than or equal to the preset value and the first distance d1" is outside the preset range, it can be determined that misalignment has occurred between the first contact plug 851 and the first wiring layer 870 due to the first contact plug 851, or it can be determined that misalignment has occurred between the first contact plug 851 and the first wiring layer 870 due to both the first contact plug 851 and the first wiring layer 870.

[0069] Refer again Figures 1 to 3 The first distance between the first contact 521 and the second contact 522 that are adjacent to each other can be measured, and the second distance between the side surface of the first wiring 541 connected to the first contact 521 and the side surface of the first contact 521 can be measured. Then, the misalignment between the contact 520 and the wiring 540 can be determined based on the value obtained by subtracting the second distance from the first distance.

[0070] When the value obtained by subtracting the second spacing from the first spacing is equal to or less than the reference value, it can be determined that misalignment has occurred between the contact 520 and the wiring 540. Furthermore, when the value obtained by subtracting the second spacing from the first spacing is less than or equal to the reference value, it can be determined which components in the contact 520 and wiring 540 have caused the misalignment, depending on whether the first spacing is within a preset range.

[0071] According to embodiments of this disclosure, misalignment between the contact 520 and the wiring 540 is determined based on whether the difference between the spacing between the contacts 520 and the spacing between the side surface of the wiring 540 connected to the contact 520 and the contact 520 is less than or equal to a reference value. Therefore, misalignment that may cause process defects can be effectively measured. Furthermore, since the cause of misalignment is identified differently depending on whether the spacing between the contacts 520 is within a preset range, it is possible to accurately identify which elements of the contacts 520 and wiring 540 caused the misalignment.

[0072] The foregoing description has been presented to enable any person skilled in the art to make, use, and practice the technical features of this disclosure, and has been provided as examples in the context of specific applications and their requirements. Various modifications, additions, and substitutions to the described embodiments will be readily apparent to those skilled in the art, and the principles described herein can be applied to other embodiments and applications without departing from the scope of the invention. Furthermore, the embodiments disclosed in this disclosure are not intended to limit but rather to explain the technical ideas of this disclosure, and therefore the scope of the technical ideas of this disclosure is not limited to these embodiments.

Claims

1. A method for determining misalignment in a semiconductor device, the semiconductor device comprising contacts arranged along a first direction and a second direction intersecting the first direction, and wiring connected to at least one of the contacts and spaced apart from each other in the first direction, the method comprising: Measure the first distance between the first contact and the second contact that are adjacent to each other in the first direction; Measure the second distance between the side surface of the first wiring and the side surface of the first contact member in the wiring, wherein, The first wiring is connected to the first contact; as well as The presence of misalignment is determined based on the first spacing and the second spacing.

2. The method according to claim 1, wherein, The first spacing is the minimum distance between the side surface of the first contact and the side surface of the second contact.

3. The method according to claim 2, wherein, The first spacing is the distance between the upper surface of the first contact and the upper surface of the second contact in the first direction.

4. The method according to claim 1, wherein, The side surface of the first wiring is the side surface of the first wiring that is farther from the first contact in the first direction.

5. The method according to claim 1, wherein, Determining whether misalignment exists includes: When the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value, it is determined that misalignment has occurred between the contact and the wiring.

6. The method according to claim 1, wherein, Determining whether misalignment exists includes: When the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value and the first spacing is within a preset range, it is determined that the misalignment between the contact and the wiring has been caused by the wiring.

7. The method according to claim 1, wherein, Determining whether misalignment exists includes: When the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value and the first spacing is outside the preset range, it is determined that misalignment between the contact and the wiring has been caused by the contact or by the contact and the wiring.

8. The method according to claim 1, wherein, The upper surface of the first contact and the upper surface of the second contact form the same plane.

9. The method according to claim 1, wherein, The lower surface of the first wiring directly contacts the upper surface of the first contact.

10. The method according to claim 1, wherein, The width of each of the wires is greater than the width of each of the contacts.

11. A method for determining misalignment in a semiconductor device, the semiconductor device including a first contact and a second contact disposed at a first distance spaced apart from each other in a first direction, and a first wiring connected to the first contact, the first wiring having side surfaces facing each other in the first direction, the method comprising: Measure the second distance between the side surface of the first wiring that is farther from the first contact and the side surface of the first contact. as well as The presence of misalignment is determined based on the first spacing and the second spacing.

12. The method according to claim 11, wherein, The first spacing is the minimum distance between the side surface of the first contact and the side surface of the second contact.

13. The method according to claim 11, wherein, The first spacing is the distance between the upper surface of the first contact and the upper surface of the second contact in the first direction.

14. The method according to claim 11, wherein, Determining whether misalignment exists includes: When the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value, it is determined that misalignment has occurred between the contact and the wiring.

15. The method according to claim 11, wherein, Determining whether misalignment exists includes: When the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value and the first spacing is within a preset range, it is determined that the misalignment between the contact and the wiring has been caused by the first wiring.

16. The method according to claim 11, wherein, Determining whether misalignment exists includes: When the value obtained by subtracting the second spacing from the first spacing is less than or equal to a preset value and the first spacing is outside the preset range, it is determined that misalignment between the contact and the wiring has been caused by the first contact and the second contact, or by the first contact, the second contact and the wiring.

17. The method according to claim 11, wherein, The upper surface of the first contact and the upper surface of the second contact form the same plane.

18. The method according to claim 11, wherein, The lower surface of the first wiring directly contacts the upper surface of the first contact.

19. The method according to claim 11, wherein, The width of the first wiring is greater than the width of both the first contact and the second contact.

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