Semiconductor device

Abstract

A semiconductor device capable of improving heat dissipation characteristics without being large-sized is provided. A semiconductor device of one embodiment has at least one semiconductor chip, a plate member made of metal, a substrate, and a resin body. The plate member is electrically connected to the semiconductor chip on the side of a first surface of the plate member that faces the semiconductor chip in a first direction. The substrate is arranged on the side of the semiconductor chip opposite to the plate member in the first direction. The resin body covers the semiconductor chip, the first surface of the plate member, and the substrate. At least a second surface of the plate member is exposed outside the resin body, and the second surface is a surface on the side opposite to the first surface in the first direction. The substrate includes a first conductive portion, a second conductive portion, a third conductive portion, and a transfer portion. The first conductive portion and the second conductive portion are electrically connected to the semiconductor chip. The third conductive portion is supplied with a control current. The transfer portion is electrically connected to the first conductive portion, the second conductive portion, and the third conductive portion, and can transfer the control current in an insulating state.

Description

[0001] Related applications

[0002] This application claims priority to Japanese Patent Application No. 2025-043654, filed on March 18, 2025, the contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the present invention relate to semiconductor devices. Background Technology

[0004] There are semiconductor devices that use semiconductor relays as a means of switching current on / off, and use semiconductor chips such as MOS field-effect transistors (hereinafter referred to as MOSFETs) as output switching elements in semiconductor relays.

[0005] In the aforementioned semiconductor device, to improve the heat dissipation characteristics of a semiconductor relay handling high currents, it is necessary to increase the thermal conductivity of the components in contact with the semiconductor chip, which is a heat source. Therefore, for example, mounting the semiconductor chip on a printed wiring substrate is considered; however, the heat dissipation of the resin portion constituting the substrate is insufficient.

[0006] Furthermore, when using a copper frame, manufacturing requires the use of hangers to keep the wiring and electrodes, which are part of the copper frame and located inside the package, exposed from the package. Since these hangers have potential, the design must ensure creepage distances to the nearby electrodes, and the application must ensure insulation; therefore, large-scale design becomes an issue. Summary of the Invention

[0007] One embodiment of the present invention provides a semiconductor device that can improve heat dissipation characteristics without scaling up.

[0008] One embodiment of the semiconductor device includes at least one semiconductor chip, a metal plate member, a substrate, and a resin body. The plate member is electrically connected to the semiconductor chip on a first side facing it in a first direction. The substrate is disposed on the side of the semiconductor chip opposite to the plate member in the first direction. The resin body covers the semiconductor chip, the first side of the plate member, and the substrate. At least a second side of the plate member is exposed outside the resin body; this second side is the side opposite to the first side in the first direction. The substrate has a first conductive portion, a second conductive portion, a third conductive portion, and a transmission portion. The first and second conductive portions are electrically connected to the semiconductor chip. The third conductive portion is used for inputting control current. The transmission portion is electrically connected to the first, second, and third conductive portions and is capable of transmitting control current in an insulated state. Attached Figure Description

[0009] Figure 1 This is a top view showing a construction example of the semiconductor device according to the first embodiment.

[0010] Figure 2 yes Figure 1 Sectional view II-II in the middle.

[0011] Figure 3 This is a top view of the semiconductor device after removing components on the +Z side relative to the substrate.

[0012] Figure 4 This is a circuit diagram showing the circuit configuration of the semiconductor device according to the first embodiment.

[0013] Figure 5 This is a top view showing a construction example of the semiconductor device according to the second embodiment.

[0014] Figure 6 yes Figure 5 Sectional view II-II in the middle. Detailed Implementation

[0015] Hereinafter, the semiconductor device according to the embodiments will be described with reference to the accompanying drawings. In the following description, components having the same or similar functions will be labeled with the same reference numerals. Furthermore, repeated descriptions of these components will sometimes be omitted.

[0016] Furthermore, in the following embodiments, for components (e.g., circuits, wiring, various voltages, and signals, etc.) that are marked with numbers / letters at the end for differentiation, sometimes a description with the numbers / letters at the end omitted (see reference numerals) is used where they may not be distinguishable from each other.

[0017] (First Implementation)

[0018] The configuration of the first embodiment of the semiconductor device will be described below.

[0019] Figure 1 This is a schematic top view illustrating the structure of the semiconductor device 100 in the embodiment. Figure 2 yes Figure 1 Sectional view II-II in the diagram. (See example...) Figure 1 as well as Figure 2 As shown, the semiconductor device 100 includes a transfer section 1, semiconductor chips 2 (2A, 2B), a substrate 3, a resin body 4, a first frame (plate component) 10 (10A, 10B), and a second frame (second plate component) 20 (20A, 20B).

[0020] Semiconductor chip 2 is rectangular in shape when viewed from above, and has at least one [unclear - possibly a component or part]. Figure 1In the example shown, two semiconductor chips 2A and 2B are used. The two semiconductor chips 2A and 2B are... Figure 1 The two semiconductor chips 2A and 2B are arranged separately in the left and right directions. Each semiconductor chip is a semiconductor element. For example, the two semiconductor chips 2A and 2B are field-effect transistors. As a more specific example, the two semiconductor chips 2A and 2B are MOSFETs (e.g., power MOSFETs). The semiconductor chips 2A and 2B are used to control the current of the photorelay, which will be described later. The current controlled by the photorelay can be either direct current (DC) or alternating current (AC).

[0021] Semiconductor chip 2 has a first electrode 21 and a second electrode 22. The first electrode 21 and the second electrode 22 are arranged in a first direction opposite to the semiconductor chip 2 and the substrate 3. Figure 2 The opposing surface 2C side (in the left-right direction) is opposite to the substrate 3. As an example, the first electrode 21 is the source electrode in the semiconductor chip 2. As an example, the second electrode 22 is the gate electrode in the semiconductor chip 2.

[0022] In the XYZ coordinate system shown in each figure, the Z direction is the direction in which the semiconductor chip 2 and the substrate 3 are aligned in section II-II. Figure 2 The direction parallel to the left-right direction is defined as the up-down direction. The Z direction corresponds to the first direction. The side in the Z direction where the substrate 3 is disposed is designated as the positive side (+Z side), and the side where the semiconductor chip 2 is disposed is designated as the negative side (-Z side). Additionally, the positive side of the Z direction is sometimes referred to as the "upper side," and the negative side as the "lower side." Furthermore, when viewed from above, the direction parallel to the direction in which the two semiconductor chips 2A and 2B are arranged is defined as the up-down direction. Figure 1 The left and right directions are called the X direction. The X direction corresponds to the third direction. The direction in which the first frame 10 (10A, 10B) and the second frame 20 (20A, 20B), described later, are arranged when viewed from above and orthogonal to the X and Z directions (viewed from above) is... Figure 1 The direction above and below is called the Y direction. The Y direction corresponds to the second direction. In addition, the terms "upper and lower," "upper side," and "lower side" are merely descriptive names and do not limit the actual positional relationship or direction.

[0023] Figure 3 This is a top view of the semiconductor device 100 after removing the components on the +Z side of the substrate 3. However, the conductor on the -Z side of the substrate 3, located on the third surface 13 opposite to the semiconductor chips 2A and 2B, is shown in dashed lines.

[0024] like Figures 1 to 3As shown, the first frame 10 (10A, 10B) is a rectangular plate component in plan view and is made of metal. The first frames 10A and 10B overlap with the semiconductor chips 2A and 2B in plan view. The first frames 10A and 10B are larger than the semiconductor chips 2A and 2B in both the X and Y directions, respectively, in plan view. The first frames 10A and 10B each have hangers (60A and 60B). The hangers 60A and 60B are axial shapes extending from the -Y side of the first frames 10A and 10B towards the -Y side. The hangers 60A and 60B are portions supported by the mold in the semiconductor device 100, for example, when the resin body 4 is formed using a mold. The hangers are cut off and removed in a process after resin sealing, becoming the same surface as the generally formed resin body 4, but the remaining portions are not insulated and remain exposed.

[0025] As an example, the first frames 10A and 10B are formed of copper (Cu) or a copper alloy. The first frames 10A and 10B are separately arranged in the X direction. The first frames 10A and 10B are electrically connected to the first surface 11 side of the semiconductor chips 2A and 2B, which faces each other in the Z direction. The drain D of the semiconductor chip 2 is electrically connected to the first frame 10. The first frames 10A and 10B are electrically connected to the semiconductor chips 2A and 2B, for example, via a conductive metal component 61 such as silver paste, silver sintering, or solder. Therefore, the entire -Z side of the semiconductor chips 2A and 2B is in metal contact. The second surface 12 of the first frames 10A and 10B is exposed outside the resin body 4, and the second surface 12 is located in the Z direction opposite to the first surface 11 and faces the -Z side.

[0026] The second frame 20 (20A, 20B) is an L-shaped plate component when viewed from above, and is made of metal. For example, the second frames 20A and 20B are formed of copper (Cu) or a copper alloy. The second frames 20 (20A, 20B) are separately arranged from the first frames 10 (10A, 10B) in the Y direction. The second frames 20 (20A, 20B) are separately arranged from the first frames 10 (10A, 10B) on the +Y side. Figure 2 As shown, the fifth surface 24 of the second frame 20 (20A, 20B) is exposed outside the resin body 4. This fifth surface 24 is located in the Z direction on the opposite side of the opposing surface 23 opposite to the substrate 3 and faces the -Z side. The exposed second frames 20A and 20B constitute external connection terminals for the control current input of the photorelay, which will be described later. The second frames 20A and 20B are arranged separately in the X direction. The second frames 20A and 20B are linearly symmetrical about the line AX passing through the center of the XY plane of the transmission section 1.

[0027] The second frames 20A and 20B each have a first portion 41 and a second portion 42. The first portion 41 has a fifth surface 24. The first portion 41 is opposite to the first frame 10 in the Y direction. The first portion 41 extends in the X direction with a constant creepage distance from the first frame 10. Figure 3 As shown, the second part 42 is positioned in the X direction at the end of the first part 41 on the line AX side. (As...) Figure 2 As shown, the second portion 42 is disposed on the substrate 3 side (+Z side) of the first portion 41 in the Z direction. The second portion 42 is located closer to the +Z side than the first frame 10, and is not opposite in the Y direction. The second portion 42 protrudes towards the first frame 10 in the Y direction further towards the -Y side than the first portion 41. The second portion 42, which protrudes towards the -Y side than the first portion 41, is not exposed outside the resin body 4.

[0028] Therefore, the creepage distance between the first frame 10 and the second frame 20 is determined by the distance in the Y direction between the first frame 10 and the first portion 41, independent of the position of the second portion 42. That is, the creepage distance between the first frame 10 and the second frame 20 is not determined by the second portion 42, which is closer to the first frame 10, but by the first portion 41, which is farther from the first frame 10, thus ensuring a sufficient creepage distance.

[0029] The second frames 20A and 20B each have a hanging pin 62 (62A, 62B). The hanging pins 62A and 62B have an axle shape extending from the side of the second frames 20A and 20B on the +Y side toward the +Y side. The hanging pins 62A and 62B are portions of the semiconductor device 100 supported by a mold, for example, when the resin body 4 is molded using a mold.

[0030] The substrate 3 is disposed separately from the semiconductor chip 2 in the Z direction towards the +Z side, opposite to the first frame 10 and the second frame 20. The substrate 3 is, for example, made of resin. The substrate 3 is, for example, a printed wiring substrate. The substrate 3 is, for example, formed of glass epoxy resin. Figure 1 As shown, substrate 3 is rectangular when viewed from above. The shape of substrate 3 on the -Y side is closer to the +Y side than the shape of semiconductor chip 2 on the -Y side. The shape of substrate 3 on the +Y side is closer to the -Y side than the shape of the second frame 20 on the +Y side. The shape of substrate 3 in the X direction is closer to line AX than the outer shape of semiconductor chip 2 in the X direction.

[0031] The substrate 3 has a third surface 13 located on the -Z side and opposite to the semiconductor chip 2, and a fourth surface 14 located on the +Z side opposite to the third surface 13. A fourth conductive portion 34, a fifth conductive portion 35, and a connecting wiring 36 are provided on the third surface 13. A first conductive portion 31, a second conductive portion 32, and a third conductive portion 33 are provided on the fourth surface 14.

[0032] The connecting wiring 36 has a third portion 36A extending along the X direction and a fourth portion 36B extending from the center of the third portion 36A in the X direction toward the +Y side. The third portion 36A is electrically connected to the first electrode 21 in the Z direction at both ends in the X direction. That is, the third portion 36A of the connecting wiring 36 electrically connects the first electrode 21 of the two semiconductor chips 2A and 2B. Figure 2 As shown, the fourth part 36B of the connecting wiring 36 is connected to the first conductive part 31 via the through hole 51.

[0033] The semiconductor device 100 has a first conductor 71 disposed between the connection wiring 36 and the first electrode 21. The first conductor 71 is formed of a conductive material (e.g., copper). The first conductor 71 is electrically connected to the first electrode 21 via a conductive component 63, such as silver paste, silver sintering, or solder, and is connected to the connection wiring 36 via a conductive component 64. Therefore, the first conductive portion 31 is electrically connected to the first electrode 21 (source electrode) in the two semiconductor chips 2A and 2B via the through-hole 51, the connection wiring 36, and the first conductor 71.

[0034] The first conductor 71 adjusts the distance between the connecting wire 36 and the first electrode 21. By adjusting the distance between the connecting wire 36 and the first electrode 21 using the first conductor 71, the connecting wire 36 and the first electrode 21 are separated in the Z direction, which can suppress contact between the substrate 3 and the semiconductor chip 2 and ensure the voltage resistance of the semiconductor chip 2.

[0035] A fourth conductive portion 34 is disposed in semiconductor chips 2A and 2B at a position opposite to the second electrode 22 in the Z direction and is electrically connected to the second electrode 22. The fourth conductive portion 34 is electrically connected to the second conductive portion 32 via a through-hole 52. The second conductive portion 32 has: a fifth portion 32A that extends in the X direction across line AX; and a sixth portion 32B that extends from the fifth portion 32A toward the -Y side at a position closer to the -X side than the first conductive portion 31. The fifth portion 32A is connected to the through-hole 52 at both ends in the X direction.

[0036] The semiconductor device 100 has a second conductor 72 disposed between a fourth conductive portion 34 and a second electrode 22. The second conductor 72 is formed of a conductive material (e.g., copper). The second conductor 72 is electrically connected to the second electrode 22 via a conductive component 65, such as silver paste, silver sintering, or solder, and is connected to the fourth conductive portion 34 via a conductive component 66. Therefore, the sixth portion 32B of the second conductive portion 32 is electrically connected to the second electrode 22 (gate electrode) in two semiconductor chips 2A and 2B via two through holes 52, the fourth conductive portion 34, and the second conductor 72, respectively.

[0037] The second conductor 72 adjusts the distance between the fourth conductive part 34 and the second electrode 22. By adjusting the distance between the fourth conductive part 34 and the second electrode 22 using the second conductor 72, the fourth conductive part 34 and the second electrode 22 are separated in the Z direction, which can suppress contact between the substrate 3 and the semiconductor chip 2 and ensure the voltage withstand capability of the semiconductor chip 2. In addition, the parallelism between the semiconductor chips 2A, 2B and the substrate 3 can be easily adjusted.

[0038] The fifth conductive part 35 is disposed opposite to the second part 42 of the second frame 20A and 20B in the Z direction and is electrically connected to the second part 42. The fifth conductive part 35 is electrically connected to the third conductive part 33 via the through hole 53. The third conductive part 33 receives control current.

[0039] The semiconductor device 100 has a third conductor 73 disposed between a fifth conductive portion 35 and a second portion 42 of a second frame 20A, 20B. The third conductor 73 is formed of a conductive material (e.g., copper). The third conductor 73 is electrically connected to the second portion 42 of the second frame 20A, 20B via a conductive component 67, such as silver paste, silver sinter, or solder, and is connected to the fifth conductive portion 35 via a conductive component 68. Therefore, the third conductive portion 33 is electrically connected to the second portion 42 of the second frame 20A, 20B via a through-hole 53, the fifth conductive portion 35, and the third conductor 73.

[0040] Since the second frame 20 has a second portion 42 located on the +Z side of the first frame 10 and not opposite to the first frame 10 in the Y direction, and the second portion 42 is configured to protrude on the -Y side than the first portion 41, it is possible to make the connection position of the fifth conductive portion 35 based on the third conductor 73 and the second frame 20 close to the first frame 10 while ensuring sufficient creepage distance between the first frame 10 and the second frame 20, which can help to miniaturize the substrate 3.

[0041] The third conductor 73 adjusts the distance between the fifth conductive part 35 and the second part 42 of the second frame 20A, 20B. By adjusting the distance between the fifth conductive part 35 and the second part 42 of the second frame 20A, 20B using the third conductor 73, the parallelism between the second frame 20A, 20B and the substrate 3 can be easily adjusted.

[0042] The semiconductor device 100 in this embodiment is, for example, an opto-relay. In this case, the transmission unit 1 includes an optocoupler (optical coupling device). The optocoupler includes an optically coupled insulating circuit. The transmission unit 1 is electrically connected to the semiconductor chips 2A and 2B via a first conductive part 31, a second conductive part 32, a fourth conductive part 34, and a connecting wiring 36. Figure 1 and Figure 4As shown, the transmission unit 1 includes a light-emitting element 80 and a light-receiving element 81 as components of an optically coupled insulated circuit. The light-emitting element 80 is, for example, an LED (Light Emitting Diode).

[0043] The transmission unit 1 has connection terminals 83A, 83B, 83C, and 83D. One node (e.g., cathode) of the light-emitting element 80 is connected to connection terminal 83C. The other node (e.g., anode) of the light-emitting element 80 is connected to connection terminal 83D. Connection terminals 83C and 83D are input terminals of the transmission unit 1. Control current for controlling the photorelay of the transmission unit 1 is applied to connection terminals 83C and 83D via the second frames 20A and 20B and the third conductive parts 33A and 33B, which serve as external connection terminals.

[0044] The light-receiving element 81 is, for example, a photodiode array. The light-receiving element 81 may include, for example, several to dozens of photodiodes 82 connected in series. The light-receiving element 81 may also be a phototransistor. One node (e.g., cathode) of the light-receiving element 81 is connected to connection terminal 83B. The other node (e.g., anode) of the light-receiving element 81 is connected to connection terminal 83A. Connection terminals 83A and 83B are the output terminals of the optocoupler.

[0045] The second electrodes (gate electrodes) 22A and 22B of semiconductor chips 2A and 2B are commonly connected to the connection terminal (anode) 83A of the light-receiving element 81 via the fourth conductive portion 34 and the second conductive portion 32. The first electrodes (source electrodes) 21A and 21B of semiconductor chips 2A and 2B are commonly connected to the connection terminal (cathode) 83B of the light-receiving element 81 via the connection wiring 36 and the first conductive portion 31. The drain D of semiconductor chip 2A is connected to the first frame 10A, which serves as an external connection terminal. The drain D of semiconductor chip 2B is connected to the first frame 10B, which serves as an external connection terminal.

[0046] The second frames 20A and 20B, which serve as external connection terminals, become the input terminals of the photorelay in the semiconductor device 100 of the embodiment. The first frames 10A and 10B, which serve as external connection terminals, become the output terminals of the photorelay in the semiconductor device 100 of the embodiment.

[0047] In the transmission section 1, which serves as an optical coupler, the light-emitting element 80 outputs light according to the voltage applied to the second frames 20A and 20B. That is, the light-emitting element 80 converts an electrical signal into an optical signal.

[0048] The light-receiving element 81 receives light signals from the light-emitting element 80. Based on the received light signal, the light-receiving element 81 generates a voltage of, for example, 7V to tens of volts. That is, the light-receiving element 81 converts the light signal into an electrical signal. The generated voltage is used as the gate voltage of the semiconductor chip 2 and supplied to the semiconductor chip 2 via the second conductive portion 32 and the fourth conductive portion 34.

[0049] Semiconductor chips 2A and 2B are driven by the voltage generated by the light-receiving element 81. Semiconductor chips 2A and 2B output current according to the voltage applied to their gates. Therefore, when semiconductor chips 2A and 2B are in the ON state, current flows through the photorelay.

[0050] In the transmission section 1, when the light-emitting element 80 is in the off state, the voltage output from the light-receiving element 81 stops. Therefore, the semiconductor chips 2A and 2B are in the off state. As a result, the first frames 10A and 10B, which are the output terminals of the photorelay, are in an electrically non-conductive state. Therefore, when the semiconductor chips 2A and 2B are in the off state, the photorelay cuts off the current. Thus, the semiconductor device 100 of this embodiment operates as a photorelay.

[0051] The resin body 4 covers the semiconductor chip 2, the first surface 11 of the first frame 10, and the substrate 3. Figures 1 to 3 In the image, to ensure visibility, resin body 4 is represented by a double-dotted line. (For example...) Figure 2 As shown, the resin body 4 is positioned on the +Z side closer to the +Z side than the transfer part 1. The resin body 4 is positioned on the -Z side so that it is coplanar with the second surface 12 and the fifth surface 24 of the first frame 10 and the second frame 20, respectively, with the second surface 12 and the fifth surface 24 exposed.

[0052] like Figures 1 to 3 As shown, the resin body 4 is positioned on the -Y side so that the -Y side of the first frames 10A and 10B is exposed and coplanar with that side. The resin body 4 is positioned on the +Y side so that the +Y side of the second frames 20A and 20B is exposed and coplanar with that side. The resin body 4 is positioned on both sides in the X direction so that the outer sides of the first frames 10A and 10B and the second frames 20A and 20B are exposed and coplanar with those sides.

[0053] The second surface 12, the side surface on the -Y side, and the outer sides on both sides in the X direction of the first frames 10A and 10B are not covered by the resin body 4 and are exposed to the outside. This allows heat generated by the semiconductor chip 2 in the on-state to be transferred to the first frame 10 via the conductive component 61, effectively dissipating heat from the exposed surfaces. The resin body 4 can also be made of other resins such as epoxy resin or polyimide resin.

[0054] The first frames 10A and 10B have pins 60A and 60B, and the second frames 20A and 20B have pins 62A and 62B. However, the first frames 10A and 10B and the second frames 20A and 20B are external connection terminals, presumably exposed to the outside. Therefore, the pins 60A and 60B, which are cut off but retained, as well as the pins 62A and 62B, can ensure creepage distances with other components. Furthermore, since the end faces of the pins 60A and 60B, which are cut off during assembly, as well as the end faces of the pins 62A and 62B, are exposed and coplanar with the side faces of the resin body 4, the heat generated in the semiconductor chip 2 can be effectively dissipated from the end faces.

[0055] As a method for manufacturing the semiconductor device 100 with the above-described configuration, firstly, a semiconductor chip 2 is mounted on the first surface 11 of the first frames 10A and 10B via a conductive member 61. A first conductor 71 is connected to the first electrode 21 of the semiconductor chip 2 via a conductive member 63, and a second conductor 72 is connected to the second electrode 22 via a conductive member 65. Additionally, a third conductor 73 is connected to the opposing surface 23 of the second frames 20A and 20B via a conductive member 67.

[0056] On the other hand, in the substrate 3, a first conductive part 31, a second conductive part 32, and a third conductive part 33 are formed on the fourth surface 14 and a transmission part 1 is mounted thereon. A fourth conductive part 34, a fifth conductive part 35, and a connecting wire 36 are formed on the third surface 13 in such a way as to connect with through holes 51, through holes 52, and through holes 53.

[0057] Subsequently, with the first frames 10A and 10B and the second frames 20A and 20B positioned by supporting the lifting pins 60A and 60B and the lifting pins 62A and 62B respectively, the connecting wiring 36, the fourth conductive part 34, and the fifth conductive part 35 of the substrate 3 are connected to the first conductor 71, the second conductor 72, and the third conductor 73 via the conductive member 63, the conductive member 66, and the conductive member 68 respectively. Thus, the first frames 10A and 10B, the second frames 20A and 20B, the semiconductor chip 2, and the substrate 3 are integrated. Then, with the lifting pins 60A and 60B and the lifting pins 62A and 62B supported by the mold and the second surface 12 of the first frames 10A and 10B and the fifth surface 24 of the second frames 20A and 20B in contact with the mold, the resin body 4 is formed by injection molding. Thus, the semiconductor device 100 is obtained.

[0058] According to at least one embodiment described above, a first conductive part and a second conductive part electrically connected to the semiconductor chips 2A and 2B, a third conductive part for controlling current input, and a transmission part 1 are provided on the substrate 3 disposed on the +Z side of the semiconductor chips 2A and 2B. The semiconductor chips 2A and 2B are electrically connected to the first frames 10A and 10B disposed on the -Z side of the semiconductor chips 2A and 2B. The first frames 10A and 10B are exposed to the outside of the resin body 4 on the second surface 12. Therefore, even with the resin body 4, the heat generated by the semiconductor chip 2 in the on state can be effectively dissipated through the first frames 10A and 10B in full-surface contact, which can cope with large current.

[0059] In addition, according to at least one embodiment, the lifting pins 60A, 60B and 62A, 62B are respectively provided on the first frame 10A, 10B and the second frame 20A, 20B, which serve as external connection terminals. Since heat dissipation from the lifting pins 60A, 60B and 62A, 62B is also increased, the heat dissipation characteristics can be improved.

[0060] (Second Implementation)

[0061] Next, refer to Figures 5 to 6 A second embodiment of the semiconductor device 100 will be described. In these figures, [the following is a description of the semiconductor device 100]. Figures 1 to 4 The same elements as those in the first embodiment shown are labeled with the same reference numerals, and their descriptions are omitted.

[0062] Figure 5 This is a top view showing a construction example of the semiconductor device 100 according to the second embodiment. Figure 6 yes Figure 5 Sectional view II-II in the diagram. (See example...) Figure 5 and Figure 6 As shown, the semiconductor device 100 of the embodiment includes a connection conductor 37. The connection conductor 37 is disposed on the fourth surface 14 of the substrate 3. The connection conductor 37 is plate-shaped and extends along the X direction. The connection conductor 37 and the third portion 36A of the connection wiring 36 (see reference) Figure 3 They are positioned opposite each other in the Z direction across the substrate 3. The connecting conductor 37 is electrically connected via the through hole 54. Other configurations are the same as in the first embodiment.

[0063] In the semiconductor device 100 configured as described above, the current flowing through the connecting wiring 36 between semiconductor chips 2A and 2B also flows through the connecting conductor 37 via the via 54. The connecting wiring 36 is a metal foil, so its resistance is relatively high, but the connecting conductor 37 is plate-shaped, so its resistance is low. Therefore, the resistance of the current flowing between semiconductor chips 2A and 2B is reduced.

[0064] According to at least one embodiment, in addition to achieving the same function and effect as the first embodiment, it is also possible to reduce the resistance of the current flowing between semiconductor chips 2A and 2B, and to handle larger currents.

[0065] In at least one embodiment, a configuration with two semiconductor chips 2 is illustrated, but a configuration with only one chip is also possible. In this case, for example, without any semiconductor chips 2... Figure 1 as well as Figure 5 In the case of the semiconductor chip 2B shown, it is sufficient to electrically connect the portion of the connecting wiring 36 opposite to the first frame 10B and the first surface 11 of the first frame 10B through the first conductor 71 and the conductive components 63 and 64.

[0066] In at least one embodiment, an example of an optical coupler using optical insulation is shown as the transmission unit 1 capable of transmitting control current in an insulated state (insulation transmission), but it is not limited to this configuration. The transmission unit 1 can be a discrete device such as a transistor, a semiconductor circuit (e.g., an integrated circuit), or a capacitively insulated device using a capacitor.

[0067] The semiconductor elements in semiconductor chip 2 are not limited to field-effect transistors. For example, semiconductor chip 2 may include bipolar transistors or IGBTs (Insulated Gate Bipolar Transistors). Semiconductor chip 2 may also be a semiconductor circuit.

[0068] The semiconductor device 100 of the embodiment may include two or more transfer units 1. Furthermore, the semiconductor device 100 of the embodiment may include three or more semiconductor chips 2.

[0069] In the semiconductor device 100 of the embodiment, a configuration in which the transfer portion 1 is provided on the fourth surface 14 side of the substrate 3 is illustrated, but the embodiment is not limited to this configuration. The transfer portion 1 may also be provided on both the fourth surface 14 side and the third surface 13 side of the substrate 3.

[0070] Several embodiments of the present invention have been described, but these embodiments are given by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the scope of the invention as set forth in the claims and its equivalents.

Claims

1. A semiconductor device, wherein, have: At least one semiconductor chip; A metal plate component is electrically connected to the semiconductor chip on a first side facing the semiconductor chip in a first direction; A substrate is disposed on the side of the semiconductor chip opposite to the plate component in the first direction; as well as A resin body covers the semiconductor chip, the first surface of the plate component, and the substrate. At least a second surface of the plate component is exposed to the outside of the resin body, and the second surface is the surface opposite to the first surface in the first direction. The substrate has: The first conductive portion and the second conductive portion are electrically connected to the semiconductor chip; The third conductive section provides control current input; as well as The transmission part is electrically connected to the first conductive part, the second conductive part and the third conductive part, and is capable of transmitting the control current in an insulated state.

2. The semiconductor device according to claim 1, wherein, The semiconductor chip has two first electrodes, each electrically connected to the first conductive portion. The substrate has a connection wiring on a third surface opposite the semiconductor chip in the first direction. The connection wiring is connected to the first conductive portion and electrically connects the two first electrodes.

3. The semiconductor device according to claim 1, wherein, The semiconductor chip has a first electrode that is electrically connected to the first conductive portion. The semiconductor device has a second metal plate component, which is disposed separately from the first plate component at the same position as the first plate component in the first direction along a second direction orthogonal to the first direction, and one side of the second plate component is exposed on the outside of the resin body. The substrate has a connection wiring on a third surface opposite the semiconductor chip in the first direction. The connection wiring is connected to the first conductive part and electrically connected to the first electrode and the second plate component.

4. The semiconductor device according to claim 2, wherein, The substrate has a plate-shaped connecting conductor on a fourth surface opposite to the third surface in the first direction, which is electrically connected to the connecting wiring.

5. The semiconductor device according to claim 2, wherein, The semiconductor device includes a second metal plate component electrically connected to the third conductive portion. The second plate component is separately disposed from the plate component in a second direction orthogonal to the first direction. A fifth surface of the second plate component is exposed outside the resin body, and this fifth surface is the side opposite to the opposing surface of the substrate in the first direction. The second plate component has: The first part has the fifth surface, which extends upward at a third surface with a constant creepage distance from the plate component; as well as The second part is disposed on the substrate side of the first part in the first direction, protrudes toward the plate component in the second direction from the first part, and is electrically connected to the third conductive part.

6. The semiconductor device according to claim 2, wherein, The semiconductor chip has a second electrode that is electrically connected to the second conductive portion. The substrate has a fourth conductive portion connected to the second conductive portion and a fifth conductive portion connected to the third conductive portion on the third surface. The semiconductor device includes a second metal plate component electrically connected to the third conductive portion. The second plate component is separately disposed from the plate component in a second direction orthogonal to the first direction. A fifth surface of the second plate component is exposed outside the resin body, and this fifth surface is the side opposite to the opposing surface of the substrate in the first direction. The semiconductor device has: A first conductor is disposed between the connecting wire and the first electrode to adjust the distance between the connecting wire and the first electrode; A second conductor is disposed between the fourth conductive part and the second electrode to adjust the distance between the fourth conductive part and the second electrode; as well as A third conductor is disposed between the fifth conductive part and the second plate component to adjust the distance between the fifth conductive part and the second plate component.

7. The semiconductor device according to claim 1, wherein, The transmission unit includes an optical coupling device. The semiconductor chip includes transistors.

8. The semiconductor device according to claim 1, wherein, The transmission unit includes an optical coupler.

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