Method of forming a substrate with conductive pillars

Abstract

This invention discloses a method for forming a substrate with conductive pillars. The method includes perforating a substrate component to form a plurality of through holes with a first aperture; enlarging the plurality of through holes, the enlarging process including a first stage enlarging and a second stage enlarging, wherein the first stage enlarging gives the plurality of through holes a second aperture larger than the first aperture, and the second stage enlarging forms an inclined surface on a portion of the plurality of through holes; filling the plurality of conductive pillars into the plurality of through holes; filling the plurality of through holes with an adhesive to fill the gap between the plurality of conductive pillars and the inner walls of the plurality of through holes, obtaining a substrate semi-finished product; and grinding the substrate semi-finished product to obtain a substrate with conductive pillars. This improves the filling efficiency of the conductive pillars.

Description

Technical Field

[0001] The present invention relates to a method for forming a substrate, and more particularly to a method for forming a substrate having conductive pillars. Background Technology

[0002] With the advancement of technology, semiconductor processes have become increasingly sophisticated. As substrate dimensions become finer, existing methods for filling conductive pillars have low efficiency and are gradually failing to meet the demands of advanced semiconductor packaging processes for transferring large numbers of conductive pillars.

[0003] Therefore, how to improve the filling efficiency of conductive posts through methodological improvements and overcome the above-mentioned defects has become one of the important issues that this project aims to address. Summary of the Invention

[0004] The technical problem to be solved by the invention is to provide a method for forming a substrate with conductive pillars, which addresses the shortcomings of the prior art. The method includes: performing a perforation process on a substrate processing part to form a plurality of through holes having a first aperture on the substrate processing part; performing a hole-enlarging process on the plurality of through holes, the hole-enlarging process including a first-stage hole-enlarging and a second-stage hole-enlarging, wherein the first-stage hole-enlarging is to give the plurality of through holes a second aperture, the second aperture being larger than the first aperture, and the second-stage hole-enlarging is to form an inclined surface on a portion of the plurality of through holes; filling the plurality of conductive pillars into the plurality of through holes; filling the plurality of through holes with an colloid to fill the gap between the plurality of conductive pillars and the inner walls of the plurality of through holes, obtaining a substrate semi-finished product; and grinding the substrate semi-finished product to obtain the substrate with conductive pillars.

[0005] Optionally, the perforation is performed by drilling the substrate using a first processing laser, wherein the wavelength of the first processing laser is 300 to 2000 nm, the pulse width of the first processing laser is 50 to 500 fs, and the pulse energy of the first processing laser is 10 nJ to 1000 μJ; wherein the hole enlargement process is performed by enlarging a plurality of the through holes using a second processing laser or etching, wherein the wavelength of the second processing laser is 300 to 2000 nm, the pulse width of the second processing laser is 50 to 500 fs, and the pulse energy of the second processing laser is 10 nJ to 1000 μJ.

[0006] Optionally, the surface roughness of the inner wall of the plurality of through holes is from 10 nm to 50,000 nm, the first hole diameter is from 1 μm to 10 μm, and the second hole diameter is from 10 μm to 100 μm.

[0007] Optionally, the method further includes using a monitoring module to monitor the substrate processing part in real time; wherein the monitoring module includes an optical module and an image analysis module, the optical module is electrically connected to the image analysis module, and the optical module includes a light emitting unit and a light receiving unit.

[0008] Optionally, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the wavelength range of the monitoring laser beam being 300–2000 nm and the pulse width range being 50 fs to 50 ns. The light receiving part includes a first optical wavefront sensor and a second optical wavefront sensor. The image analysis module includes a waveform generator. The first optical wavefront sensor is located on a first side of the substrate processing part and receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second optical wavefront sensor is located on a second side of the substrate processing part. The light emitting unit emits the monitoring laser beam toward the substrate, and the second optical wavefront sensor receives transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal. The waveform generator is electrically connected to the first and second optical wavefront sensors to receive the reflected light signal and generate a first detection waveform, and to receive the transmitted light signal and generate a second detection waveform.

[0009] Optionally, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the wavelength range of the monitoring laser beam being 300–2000 nm and the pulse width range being 50 fs to 50 ns. The light receiving part includes a first photoelastic sensor and a second photoelastic sensor, and the image analysis module includes an image device. The first photoelastic sensor is located on a first side of the substrate processing part and receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second photoelastic sensor is located on a second side of the substrate processing part. The light emitting unit emits a second laser beam toward the substrate processing part, and the second photoelastic sensor receives transmitted light from the second laser beam passing through the substrate processing part to generate a transmitted light signal. The image device is electrically connected to the first and second photoelastic sensors to receive the reflected light signal and generate a first stress distribution feature map, and to receive the transmitted light signal and generate a second stress distribution feature map.

[0010] Optionally, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the wavelength range of the monitoring laser beam is 300-2000 nm, the pulse width range of the monitoring laser beam is 50 fs to 50 ns, the light receiving part includes a first laser vibrometer and a second laser vibrometer, and the image analysis module includes a waveform generator; wherein the first laser vibrometer is located on a first side of the substrate processing part, and the first laser vibrometer receives a reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected ultrasonic wave; wherein the second laser vibrometer is located on a second side of the substrate processing part; the light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second laser vibrometer receives a transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted ultrasonic wave; wherein the waveform generator is electrically connected to the first laser vibrometer and the second laser vibrometer to receive the reflected ultrasonic wave and generate a first waveform, and to receive the transmitted ultrasonic wave and generate a second waveform.

[0011] Optionally, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the light receiving part includes a first hyperspectral sensor and a second hyperspectral sensor, and the image analysis module includes a hyperspectral generator; wherein, the first hyperspectral sensor is located on a first side of the substrate processing part, and the first hyperspectral sensor receives a reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal; wherein, the second hyperspectral sensor is located on a second side of the substrate processing part; the light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second hyperspectral sensor receives a transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal; wherein, the hyperspectral generator is electrically connected to the first hyperspectral sensor and the second hyperspectral sensor to receive the reflected light signal and generate a first detection spectrum, and to receive the transmitted light signal and generate a second detection spectrum; wherein, the first hyperspectral sensor and the second hyperspectral sensor receive a spectral range of 300 nm to 2500 nm, wherein the spectrum is a continuous spectrum.

[0012] Optionally, the monitoring module further includes an image device that acquires multiple images of a shadowed area of ​​the substrate processing part that is not exposed to a monitoring laser beam; and the image analysis module receives the multiple images and determines and calculates the defects and probabilities of the shadowed area based on the multiple images; or compensates the multiple images and determines and calculates the defects and probabilities of the shadowed area.

[0013] Optionally, the step of grinding the substrate semi-finished product further includes using a cleaning module to remove impurities from the substrate semi-finished product, wherein the cleaning module includes a gas source and a gas nozzle, and the gas nozzle is connected to the gas source.

[0014] Optionally, the method further includes using an artificial intelligence module to learn and pre-train parameters of the perforation process and the via enlargement process, and to automatically select a suitable monitoring module based on the characteristics of the substrate component, and to optimize the settings of multiple monitoring parameters of the monitoring module; wherein the artificial intelligence module includes: a database unit having relevant data on the type, shape, size, thickness, and density of the substrate component, wherein the database unit is connected to a cloud platform via the Internet to update the relevant data; a learning and training unit connected to the database unit, wherein the learning and training unit learns and pre-trains based on the relevant data in the database unit using a deep learning algorithm; a parameter optimization setting unit connected to the database unit to optimize the settings of the perforation process and the via enlargement process based on the relevant data on the type, shape, size, thickness, and density of the substrate component; and a monitoring module setting unit connected to the database unit to select a suitable monitoring module based on the relevant data on the type, shape, size, thickness, and density of the substrate component.

[0015] One of the beneficial effects of the present invention is that the method for forming a substrate with conductive pillars provided by the present invention can improve the filling efficiency of the conductive pillars by "performing a perforation process on a substrate processing part to form a plurality of through holes having a first aperture on the substrate processing part" and "performing a hole enlargement process on the plurality of through holes, the hole enlargement process including a first stage hole enlargement and a second stage hole enlargement, wherein the first stage hole enlargement is to make the plurality of through holes have a second aperture, the second aperture being larger than the first aperture, and the second stage hole enlargement is to make a portion of the plurality of through holes form an inclined surface".

[0016] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Attached Figure Description

[0017] Figure 1 This is a flowchart of a method for forming a substrate with conductive pillars according to the present invention.

[0018] Figure 2 This is a cross-sectional schematic diagram of step S1 of the method for forming a substrate with conductive pillars according to the present invention.

[0019] Figure 3 This is a cross-sectional schematic diagram of the first stage of the method for forming a substrate with conductive pillars according to the present invention, which involves hole enlargement.

[0020] Figure 4 This is a cross-sectional schematic diagram of the second stage of the method for forming a substrate with conductive pillars according to the present invention.

[0021] Figure 5 A schematic diagram of step S3 of a method for forming a substrate with conductive pillars.

[0022] Figure 6 This is a cross-sectional schematic diagram of step S4 of the method for forming a substrate with conductive pillars according to the present invention.

[0023] Figure 7 This is a cross-sectional schematic diagram of step S5 of the method for forming a substrate with conductive pillars according to the present invention.

[0024] Figure 8 This is a schematic diagram of the architecture of a monitoring module used in the method for forming a substrate with conductive pillars according to the present invention.

[0025] Figure 9 This is a functional block diagram of the artificial intelligence module used in the method for forming a substrate with conductive pillars according to the present invention.

[0026] Figure 10 This is a schematic diagram of the cleaning module used in the metal column transfer method of the present invention.

[0027] Reference numerals: 1: First laser unit; 10: Substrate processing part; 11: Through hole; 12: Inclined surface; 2: Second laser unit; 20: Conductive pillar; 30: Adhesive layer; 40: Colloid; 50: Monitoring module; 51: Light emitting unit; 52: Control device; 53: Image device; 54: First light receiving unit; 55: Second light receiving unit; 60: Artificial intelligence module; 61: Database unit; 62: Learning and training unit; 63: Parameter optimization setting unit; 64: Monitoring module setting unit; 70: Cleaning module; 71: Gas source; 72: Gas nozzle; 73: Cleaning substance; D1: First aperture; D2: Second aperture; L1: First processing laser; L2: Second processing laser; La: Reflected light; Lb: Transmitted light; Lm: Monitoring laser beam; R: Vibrating disk; S1: Substrate semi-finished product; S1-S5: Steps; S2: Substrate with conductive pillar. Detailed Implementation

[0028] The following specific embodiments illustrate the implementation of the method for forming a substrate with conductive pillars disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated beforehand. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.

[0029] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the associated listed items.

[0030] See Figures 1 to 7 The diagrams shown are a flowchart of the method for forming a substrate with conductive pillars according to the present invention, a cross-sectional view of step S1, a cross-sectional view of the first stage of hole enlargement, a cross-sectional view of the second stage of hole enlargement, a cross-sectional view of step S3, a cross-sectional view of step S4, and a cross-sectional view of step S5. The present invention provides a method for forming a substrate with conductive pillars, comprising at least the following steps: Step S1: Performing a perforation process on a substrate processing part 10 to form a plurality of through holes 11 having a first aperture D1 on the substrate processing part 10; Step S2: Performing a hole enlargement process on the plurality of through holes 11; Step S3: Filling the plurality of conductive pillars 20 into the plurality of through holes 11; Step S4: Filling the plurality of through holes 11 with a colloid 40 to fill the gap between the plurality of conductive pillars 20 and the inner walls of the plurality of through holes 11, obtaining a substrate semi-finished product S1; and Step S5: Grinding the substrate semi-finished product S1 to obtain a substrate S2 with conductive pillars.

[0031] In step S1, as Figure 2 As shown, a first processing laser L1 emitted by a first laser unit 1 can be used to drill holes in the substrate processing part 10. The wavelength of the first processing laser is 300 to 2000 nm, the pulse width of the first processing laser is 50 to 500 fs, and the pulse energy of the first processing laser is 10 nJ to 1000 μJ. Specifically, the perforation process can be performed by using the first processing laser L1 to form a plurality of through holes 11 with a first aperture D1 on the substrate processing part 10, and the first aperture D1 is between 1 μm and 10 μm (for example, any positive integer between 1 μm and 10 μm).

[0032] In step S2, as Figure 3 As shown, a plurality of through holes 11 can be enlarged. The enlargement process can include a first stage of enlargement and a second stage of enlargement. Specifically, the first stage of enlargement can be to increase the diameter of the plurality of through holes 11 as a whole, that is, to make the plurality of through holes 11 have a second diameter D2 that is larger than the first diameter D1, and the second diameter D2 is between 10 μm and 100 μm (for example, any positive integer between 10 μm and 100 μm).

[0033] Furthermore, after the first stage of hole enlargement, a second stage of hole enlargement can be performed, which means that a portion of the plurality of through holes 11 can form an inclined surface 12. Specifically, as... Figure 4 As shown, by expanding the holes in the second stage, the plurality of through holes 11 can have a funnel-shaped structure when viewed in cross-section, so that the width of the upper half of the through hole 11 is greater than the width of the lower half of the through hole 11, which is conducive to the subsequent filling of the conductive post 20.

[0034] In one embodiment, a second processing laser L2 emitted by a second laser unit 2 can be used to enlarge a plurality of through holes 11. The wavelength of the second processing laser is 300 to 2000 nm, the pulse width of the second processing laser is 50 to 500 fs, and the pulse energy of the second processing laser is 10 nJ to 1000 μJ. In another embodiment, etching can also be used to enlarge the plurality of through holes 11, such that the surface roughness of the inner wall of the through hole 11 is between 10 nm and 50000 nm (e.g., any positive integer between 10 nm and 50000 nm). For example, etching can be wet chemical etching, in which the substrate processing part 10 is immersed in a chemical solution to remove a portion of the substrate processing part 10. Further, the chemical solution can be an inorganic acid or alkali solution such as hydrofluoric acid (HF) or potassium hydroxide (KOH).

[0035] In step S3, as Figure 5 As shown, a plurality of conductive posts 20 can be filled into a plurality of through holes 11. Specifically, a substrate processing part 10 that has undergone drilling and hole enlargement processing can be placed on a vibrating plate R, and a plurality of conductive posts 20 can be placed on the substrate processing part 10. The vibrating plate R is started, and the vibrating plate R can vibrate repeatedly in the horizontal or vertical direction, so that the plurality of conductive posts 20 can move on the substrate processing part 10 and fill into the plurality of through holes 11.

[0036] Furthermore, the bottom of the substrate processing part 10 may have an adhesive layer 30, so that the conductive post 20 falling into the through hole 11 can be fixed in the substrate processing part 10. For example, the material of the adhesive layer 30 may be epoxy resin, benzocyclobutene resin (BCB), silicone resin, perfluorocyclobutane (PFCB), or polyimide.

[0037] Then, the glue-filling step in step S4 can be performed, such as... Figure 6 As shown, the colloid 40 can be filled into the gap between the inner walls of a plurality of conductive pillars 20 and a plurality of through holes 11 to fix the plurality of conductive pillars 20 into the plurality of through holes 11, thereby obtaining a substrate semi-finished product S1. For example, the colloid filling step can be performed by spin coating, and then the colloid 40 is dried to obtain spin-on glass (SOG).

[0038] After the adhesive filling is completed, the adhesive layer 30 can be removed, and step S5 can be performed to grind the substrate semi-finished product S1, such as... Figure 7 As shown, after grinding the substrate semi-finished product S1, a substrate S2 with conductive pillars and flat upper and lower surfaces can be obtained.

[0039] In one embodiment of the present invention, step S3 may further include using a monitoring module 50 to monitor the filling status of the conductive post 20 in real time, so as to control the vibration direction, frequency and amplitude of the vibrating disk R, and further improve the accuracy and efficiency of the conductive post 20 filling the through hole 11. Specifically, as Figure 8 As shown, the monitoring module 50 may include a light emitting unit 51, a control device 52, an image device 53, a first light receiving unit 54, and a second light receiving unit 55. The light emitting unit 51, the image device 53, the first light receiving unit 54, and the second light receiving unit 55 are all electrically connected to the control device 52. The light emitting unit 51 is located on the first side of the substrate processing part 10 and emits a monitoring laser beam Lm toward the substrate processing part 10. The first light receiving unit 54 is located on the first side of the substrate processing part 10 and receives the reflected light La from the monitoring laser beam Lm reflected by the substrate processing part 10 to generate a reflected light signal. The second light receiving unit 55 is located on the second side of the substrate processing part 10 and receives the transmitted light Lb from the monitoring laser beam Lm passing through the substrate processing part 10 to generate a transmitted light signal. The image device 53 is electrically connected to the first light receiving unit 54 and the second light receiving unit 55 to receive the reflected light La and the transmitted light Lb, and generate a detection result.

[0040] The monitoring module 50 may also include a moving device (not shown). For example, a first light receiving unit 54 is connected to a first moving device so that the first light receiving unit 54 can move in three-dimensional space; a second light receiving unit 55 is connected to a second moving device so that the second light receiving unit 55 can move in three-dimensional space; and a light emitting unit 51 is connected to a laser moving device so that the light emitting unit 51 can move in three-dimensional space. This allows adjustment of the light emission position of the light emitting unit 51 and the light receiving positions of the first light receiving unit 54 and the second light receiving unit 55.

[0041] In one embodiment, the monitoring module 50 is a hyperspectral monitoring module, which includes an optical module and an image analysis module (not shown). The optical module is electrically connected to the image analysis module and includes a light emitting unit 51 and a first light receiving unit 54 and a second light receiving unit 55 as light receiving units. The first light receiving unit 54 and the second light receiving unit 55 can be hyperspectral sensors, such as a hyperspectral camera. The first light receiving unit 54 and the second light receiving unit 55 receive a continuous spectrum with a spectral range of 300 nm to 2500 nm. According to one embodiment, during the filling of the conductive pillar 20, the light emitting unit 51 emits a monitoring laser beam Lm to the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, the second light receiving unit 55 receives the transmitted light Lb signal, and provides the corresponding spectrum to the image analysis module, so that the image analysis module analyzes the spectrum to obtain optical results, and transmits the optical results to the processing module (not shown) to control and adjust the vibration frequency and amplitude of the vibrating disk R according to the optical results.

[0042] In one embodiment, the monitoring module 50 can be a wavefront monitoring module, which includes a laser device as a light emitting unit 51, a first light receiving unit 54 and a second light receiving unit 55 as light receiving units, and a waveform generator (not shown). The first light receiving unit 54 and the second light receiving unit 55 can be wavefront sensors and are electrically connected to the waveform generator. The light emitting unit 51 is disposed above the substrate processing part 10. According to one embodiment, during the filling of the conductive pillars 20, the light emitting unit 51 emits a laser beam as a monitoring laser beam Lm onto the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, and the second light receiving unit 55 receives the transmitted light Lb signal. The received reflected light La signal and transmitted light Lb signal are provided to a waveform generator (not shown) to analyze the reflected light La signal and transmitted light Lb signal to obtain a waveform detection result, which is then transmitted to the processing module. The processing module can control and adjust the vibration frequency and amplitude of the vibrating disk R based on the waveform detection result.

[0043] In one embodiment, the monitoring module 50 can be a photoelastic monitoring module, which includes a laser device as a light emitting unit 51, a first light receiving unit 54 and a second light receiving unit 55 as light receiving units, and an image device (not shown). The first light receiving unit 54 and the second light receiving unit 55 can be photoelastic sensors and are electrically connected to the image device. The light emitting unit 51 is disposed above the substrate processing part 10. According to one embodiment, during the filling of the conductive pillar 20, the light emitting unit 51 emits a laser beam as a monitoring laser beam Lm onto the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, and the second light receiving unit 55 receives the transmitted light Lb signal. The received reflected light La signal and transmitted light Lb signal are provided to the image device (not shown) to analyze the reflected light La signal and transmitted light Lb signal to obtain stress distribution characteristic results, and the stress distribution characteristic results are transmitted to the processing module. The processing module can control and adjust the vibration frequency and amplitude of the vibratory plate R based on the stress distribution characteristics.

[0044] In one embodiment, the monitoring module 50 can be a femtosecond ultrasonic monitoring module, comprising a laser device as the light emitting unit 51, a first light receiving unit 54 and a second light receiving unit 55 as light receiving units, and a waveform generator (not shown). The light emitting unit 51 is disposed above the substrate processing part 10. According to one embodiment, during the filling of the conductive pillar 20, the light emitting unit 51 emits a laser beam as a monitoring laser beam Lm onto the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, and the second light receiving unit 55 receives the transmitted light Lb signal. The received reflected light La signal and transmitted light Lb signal are provided to the waveform generator to analyze the reflected light La signal and transmitted light Lb signal to obtain a waveform diagram result, which is then transmitted to the processing module. The processing module can control and adjust the vibration frequency and amplitude of the vibrating disk R based on the waveform diagram result.

[0045] In one embodiment, the monitoring module 50 can be a CCD monitoring module, which includes a CCD camera (not shown). According to one embodiment, during the filling of the conductive pillars 20, the CCD camera can capture images of the surface of the substrate processing part 10 in real time and transmit the images to the processing module. The processing module can analyze the micro-hole filling status based on the images and control and adjust the vibration frequency and amplitude of the vibrating disk R in real time. In addition, the CCD camera can also be used as an image device to acquire multiple images of the shadowed area of ​​the detection part that is not receiving the monitoring laser beam Lm. The image analysis module receives multiple images and judges and calculates the defects and probabilities of the shadowed area based on the multiple images. The analysis module may also compensate for multiple images and judge and calculate the defects and probabilities of the shadowed area.

[0046] For example, the imaging device can be any device capable of acquiring images (such as a camera), capturing the shadowed areas in the detection region of the object under test, particularly areas where the monitoring laser beam Lm cannot be received. The analysis module, such as a computer, can use deep learning to determine the potential defects in the shadowed areas and the probability of those defects occurring. Alternatively, the analysis module can further determine and calculate the defects and probabilities in the shadowed areas by compensating the image. In other words, when the monitoring module 50 of this invention cannot determine the filling status of the conductive post 20 using the monitoring laser beam Lm, the imaging device can be used to assist in determining the filling status of the conductive post 20, thereby improving the accuracy of defect detection.

[0047] In some embodiments, the method for forming a substrate with conductive pillars according to the present invention may further include using an artificial intelligence module 60 to learn and pre-train parameters for through-hole processing and through-hole enlargement processing, and automatically selecting a suitable monitoring module 50 according to the characteristics of the substrate processing part 10, and optimizing the settings of multiple monitoring parameters of the monitoring module 50. For example... Figure 9 As shown, the artificial intelligence module 60 may include at least a database unit 61, a learning and training unit 62, a parameter optimization setting unit 63, and a monitoring module setting unit 64. The database unit 61 stores relevant data about the substrate processing part 10, such as the type, shape, size, thickness, and density of the substrate processing part 10. Furthermore, the database unit 61 can be connected to the Internet via a wireless network unit (not shown) and can further connect to a cloud platform to update relevant data or provide it to the deep learning algorithm used by the learning and training unit 62. The learning and training unit 62 is connected to the database unit 61 and performs learning and pre-training based on the relevant data in the database unit 61 using a deep learning algorithm. The parameter optimization setting unit 63 is connected to the database unit 61 and optimizes the processing parameters based on the relevant data regarding the type, shape, size, thickness, and density of the substrate processing part 10. The monitoring module setting unit 64 is connected to the database unit 61 and selects a suitable monitoring module 50 based on the relevant data regarding the type, shape, size, thickness, and density of the substrate processing part 10.

[0048] The method for forming a substrate with conductive pillars according to the present invention may further include using a cleaning module 70 to remove impurities from the substrate semi-finished product S1 in the polishing step S5. The cleaning module may be disposed above or adjacent to the substrate semi-finished product S1, and the present invention does not particularly limit the arrangement of the cleaning module 70.

[0049] Specifically, please refer to Figure 10The cleaning module 70 may include at least a gas source 71 for storing cleaning material 73 and a gas nozzle 72 for supplying cleaning material 73 to the substrate processing part 10 or the substrate processing part 10. For example, the gas source 71 may contain liquid carbon dioxide and be supplied to the gas nozzle 72 at a pressure between approximately 700 psi and approximately 900 psi (e.g., any positive integer between 700 psi and 900 psi), causing the liquid carbon dioxide to undergo isenthalpic expansion into a stream of solid carbon dioxide particles upon exiting the gas nozzle 72, thereby carrying away impurities from the substrate processing part 10 or the substrate processing part 10. In one embodiment, the distance between the gas nozzle 72 and the substrate processing part 10 may be between approximately 0.5 inches and approximately 2 inches (e.g., any positive integer between 0.5 inches and 2 inches). In one embodiment, the gas nozzle 72 and the substrate processing part 10 may have an angle of inclination between approximately 15 degrees and 45 degrees (e.g., any positive integer between 15 and 45 inches) to prevent the momentum of the carbon dioxide particle stream from being too high and damaging the substrate processing part 10.

[0050] [Beneficial Effects of the Examples]

[0051] One of the beneficial effects of the present invention is that the method for forming a substrate with conductive pillars provided by the present invention can improve the filling efficiency of the conductive pillars by "performing a perforation process on a substrate processing part to form a plurality of through holes having a first aperture on the substrate processing part" and "performing a hole enlargement process on the plurality of through holes, the hole enlargement process including a first stage hole enlargement and a second stage hole enlargement, wherein the first stage hole enlargement is to make the plurality of through holes have a second aperture, the second aperture being larger than the first aperture, and the second stage hole enlargement is to make a portion of the plurality of through holes form an inclined surface".

[0052] Furthermore, due to the cohesive force between liquid molecules and their adhesive force on solid surfaces, liquid adheres to the flow channel openings, making it difficult for the adhesive to flow into the vias during the filling step. The method for forming a substrate with conductive pillars provided by this invention involves a second stage of via enlargement after the first stage, resulting in a surface roughness of the inner wall of the via between 10 nm and 50,000 nm. This disrupts the smoothness of the liquid surface in the via, allowing the adhesive to flow into the vias more easily during filling.

[0053] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made based on the content of the present invention specification and drawings are included in the scope of the patent application of the present invention.

Claims

1. A method for forming a substrate having conductive pillars, characterized in that, The method for forming a substrate having conductive pillars includes: The substrate is perforated to form a plurality of through holes having a first aperture on the substrate. A plurality of through holes are subjected to a hole-expanding process, the hole-expanding process including a first stage hole-expanding and a second stage hole-expanding. The first stage hole-expanding is to give the plurality of through holes a second hole diameter, the second hole diameter being larger than the first hole diameter. The second stage hole-expanding is to form an inclined surface on a portion of the plurality of through holes. A plurality of conductive pillars are filled into a plurality of the through holes; The colloid is filled into a plurality of the through holes to fill the gaps between the plurality of conductive pillars and the inner walls of the plurality of through holes, thereby obtaining a substrate semi-finished product; and The substrate semi-finished product is ground to obtain the substrate with conductive pillars.

2. The method as described in claim 1, characterized in that, The perforation is performed by drilling the substrate using a first processing laser. The wavelength of the first processing laser is 300 to 2000 nm, the pulse width of the first processing laser is 50 to 500 fs, and the pulse energy of the first processing laser is 10 nJ to 1000 μJ. The hole enlargement process involves enlarging a plurality of the through holes using a second processing laser or etching. The wavelength of the second processing laser is 300 to 2000 nm, the pulse width of the second processing laser is 50 to 500 fs, and the pulse energy of the second processing laser is 10 nJ to 1000 μJ. The surface roughness of the inner wall of the plurality of through holes is from 10 nm to 50,000 nm. The first pore size is 1 μm to 10 μm, and the second pore size is 10 μm to 100 μm.

3. The method as described in claim 1, characterized in that, The method for forming a substrate with conductive pillars further includes monitoring the substrate in real time using a monitoring module; wherein the monitoring module includes an optical module and an image analysis module, the optical module being electrically connected to the image analysis module, and the optical module including a light emitting unit and a light receiving unit.

4. The method as described in claim 3, characterized in that, The light emitting unit emits a monitoring laser beam toward the substrate processing part. The wavelength range of the monitoring laser beam is 300 to 2000 nm, and the pulse width range of the monitoring laser beam is 50 fs to 50 ns. The light receiving part includes a first optical wavefront sensor and a second optical wavefront sensor. The image analysis module includes a waveform generator. The first optical wavefront sensor is located on the first side of the substrate processing component, and the first optical wavefront sensor receives the reflected light of the monitoring laser beam reflected by the substrate processing component to generate a reflected light signal. The second wavefront optical sensor is located on the second side of the substrate processing component; the optical emitting unit emits the monitoring laser beam toward the substrate, and the second wavefront optical sensor receives the transmitted light of the monitoring laser beam passing through the substrate processing component to generate a transmitted light signal; The waveform generator is electrically connected to the first optical wavefront sensor and the second optical wavefront sensor to receive the reflected light signal and generate a first detection waveform, and to receive the transmitted light signal and generate a second detection waveform.

5. The method as described in claim 3, characterized in that, The light emitting unit emits a monitoring laser beam toward the substrate processing part. The wavelength range of the monitoring laser beam is 300 to 2000 nm, and the pulse width range of the monitoring laser beam is 50 fs to 50 ns. The light receiving part includes a first photoelastic sensor and a second photoelastic sensor. The image analysis module includes an image device. The first photoelastic sensor is located on the first side of the substrate processing part, and the first photoelastic sensor receives the reflected light of the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second photoelastic sensor is located on the second side of the substrate processing part; the light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second photoelastic sensor receives the transmitted light of the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal; The imaging device is electrically connected to the first photoelastic sensor and the second photoelastic sensor to receive the reflected light signal and generate a first stress distribution feature map, and to receive the transmitted light signal and generate a second stress distribution feature map.

6. The method as described in claim 3, characterized in that, The light emitting unit emits a monitoring laser beam toward the substrate processing part. The wavelength range of the monitoring laser beam is 300 to 2000 nm, and the pulse width range of the monitoring laser beam is 50 fs to 50 ns. The light receiving part includes a first laser vibrometer and a second laser vibrometer. The image analysis module includes a waveform generator. The first laser vibration meter is located on the first side of the substrate processing part, and the first laser vibration meter receives the reflected light of the monitoring laser beam reflected by the substrate processing part to generate reflected ultrasonic waves. The second laser vibrometer is located on the second side of the substrate processing part; the light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second laser vibrometer receives the transmitted light of the monitoring laser beam passing through the substrate processing part to generate penetrating ultrasonic waves; The waveform generator is electrically connected to the first laser vibrometer and the second laser vibrometer to receive the reflected ultrasonic waves and generate a first waveform, and to receive the transmitted ultrasonic waves and generate a second waveform.

7. The method as described in claim 3, characterized in that, The light emitting unit emits a monitoring laser beam toward the substrate processing part, the light receiving part includes a first hyperspectral sensor and a second hyperspectral sensor, and the image analysis module includes a hyperspectral generator; The first hyperspectral sensor is located on the first side of the substrate processing part, and the first hyperspectral sensor receives the reflected light of the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second hyperspectral sensor is located on the second side of the substrate processing part; the light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second hyperspectral sensor receives the transmitted light of the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal; The hyperspectral generator is electrically connected to the first hyperspectral sensor and the second hyperspectral sensor to receive the reflected light signal and generate a first detection spectrum, and to receive the transmitted light signal and generate a second detection spectrum. The first hyperspectral sensor and the second hyperspectral sensor receive spectral ranges from 300 nm to 2500 nm, wherein the spectrum is a continuous spectrum.

8. The method as described in claim 3, characterized in that, The monitoring module further includes an image device that acquires multiple images of the shadowed portion of the substrate processing part that is not subjected to the monitoring laser beam; and the image analysis module receives the multiple images and determines and calculates the defects and probabilities of the shadowed portion based on the multiple images; or compensates the multiple images and determines and calculates the defects and probabilities of the shadowed portion.

9. The method as described in claim 1, characterized in that, The step of grinding the substrate semi-finished product further includes using a cleaning module to remove impurities from the substrate semi-finished product, wherein the cleaning module includes a gas source and a gas nozzle, and the gas nozzle is connected to the gas source.

10. The method as described in claim 1, characterized in that, The method for forming a substrate with conductive pillars further includes using an artificial intelligence module to learn and pre-train parameters of the perforation process and the hole enlargement process, and to automatically select a suitable monitoring module according to the characteristics of the substrate processing part, and to optimize the setting of multiple monitoring parameters of the monitoring module. The artificial intelligence module includes: A database unit, wherein the database unit has relevant data on the type, shape, size, thickness or density of the substrate processing part, wherein the database unit is connected to a cloud platform via the Internet to update the relevant data; A learning and training unit is connected to the database unit. The learning and training unit performs learning and pre-training based on relevant data in the database unit using a deep learning algorithm. A parameter optimization setting unit, connected to the database unit, optimizes the perforation and enlargement processes based on data related to the type, shape, size, thickness, or density of the substrate component. A monitoring module setting unit is connected to the database unit to select a suitable monitoring module based on relevant data on the type, shape, size, thickness, or density of the substrate processing part.

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