Semiconductor device assembly, pin assembly and method of producing a semiconductor device assembly

Abstract

A semiconductor device assembly, a lead assembly, and a method of producing a semiconductor device assembly are provided. The semiconductor device assembly can include a module including a molding compound layer and a substrate on an inner side of the molding compound layer, a semiconductor die electrically coupled with the substrate, a leadframe coupled with the substrate, the leadframe including a lead terminal extending from the molding compound layer, and a lead assembly including a base coupled to the module, the base including a lead receptacle and a lead terminal opening, the lead terminal disposed in the lead terminal opening, and a lead disposed in the lead receptacle and coupled to the lead terminal.

Description

Technical Field

[0001] This application relates to semiconductor technology, and more particularly to a semiconductor device assembly, a pin assembly, and a method for manufacturing the semiconductor device assembly. Background Technology

[0002] Semiconductor device assemblies (such as assemblies including power semiconductor devices, which may be referred to as power modules, multi-chip power modules, etc.) can be implemented using semiconductor dies, substrates (e.g., directly bonded metal substrates, ceramic substrates, etc.), wire bonding, etc. These semiconductor device assemblies can be coupled to printed circuit boards (PCBs) of electrical systems, such as inverter systems, via pins. Pins can be solder pins soldered to the PCB or press-fit pins pressed into plated through-holes in the PCB. Summary of the Invention

[0003] In some aspects, the technology described herein relates to a semiconductor device assembly comprising: a module including: a semiconductor die electrically coupled to a substrate; a lead frame coupled to the substrate and the semiconductor die; and a molding compound encapsulating the substrate, the semiconductor die, and the lead frame, wherein the lead frame includes pin terminals extending from the molding compound; and a pin assembly including: a base coupled to the module; and pins disposed in pin sockets of the base; wherein pin terminals are inserted into the base, and terminal ends of the pins are coupled to pin terminals.

[0004] In some aspects, the technology described herein relates to a pin assembly comprising: a base including a pin socket in a top side of the base and a pin terminal opening in a first side of the base; and a pin configured to be disposed in the pin socket, wherein the pin includes a non-conductive body configured to be inserted into the pin socket; wherein the pin terminal opening intersects the pin socket and is configured to receive a pin terminal of a semiconductor device assembly for coupling the pin to the pin terminal.

[0005] In some aspects, the techniques described herein relate to methods for producing semiconductor device assemblies, the methods including: electrically coupling a semiconductor die to a substrate; coupling a lead frame to the substrate; applying a molding compound to the lead frame and the substrate to form a module, the module including pin terminals extending from one side of the module; coupling a base to the module by inserting the pin terminals into a base of a pin assembly; inserting pins into pin sockets in the base; and coupling pins to end portions of the pin terminals located in the base. Attached Figure Description

[0006] Figure 1A This is a front view of an example semiconductor device assembly disclosed herein.

[0007] Figures 1B to 1D These are, respectively, a front view, a first side view, and a bottom view of an example semiconductor device assembly of this disclosure.

[0008] Figure 2 yes Figures 1B to 1D A front view of a semiconductor device assembly, showing a first pin assembly and a second pin assembly spaced apart from the module portion of the semiconductor device assembly.

[0009] Figure 3A It is along Figure 1B The section line 3-3 is cut off Figure 1A A cross-sectional side view of a semiconductor device assembly.

[0010] Figure 3B It is along Figure 1B The section line 3-3 is cut off Figure 1A A cross-sectional side view of a semiconductor device assembly with pins removed.

[0011] Figure 3C yes Figures 1B to 1D A detailed cross-sectional view of the end of a semiconductor device assembly, showing one of the pins in the insertion position and coupled to the pin terminal.

[0012] Figure 3D yes Figures 1B to 1D A front view of one of the pins in a semiconductor device assembly.

[0013] Figure 4A and Figure 4B These are the front and side views of the pins in this disclosure.

[0014] Figure 5A and Figure 5B These are the front and side views of the pins in this disclosure.

[0015] Figure 5C and Figure 5D They are Figure 5A and Figure 5B The front and side views of the pins, and a detailed cross-sectional view of the portion of the electrical system into which the pins are inserted.

[0016] Figure 6A yes Figures 1B to 1D A front view of an example substrate assembly of a semiconductor device component.

[0017] Figure 6B Before the molding operation Figures 1B to 1D A front view of a semiconductor device assembly.

[0018] Figure 7This is a front view of an example pass-molded press-fit pin frame assembly.

[0019] Figures 8A to 8C These are the front view, first side view, and bottom view of the example semiconductor device assembly.

[0020] Figures 9A to 9D These are the front view, first side view, second side view, and bottom view of the example semiconductor device assembly.

[0021] Figures 10A to 10D These are the front view, first side view, second side view, and bottom view of the example semiconductor device assembly.

[0022] Figure 11 This is a flowchart illustrating an example method for producing semiconductor device components of this disclosure.

[0023] The same reference numerals in the various figures indicate the same elements. For all such elements, some reference numerals for similar elements may not be repeated. In some cases, different reference numerals may be used for the same or similar elements. Some reference numerals for certain elements of a given embodiment may not be repeated in every figure corresponding to that embodiment. Some reference numerals for certain elements of a given embodiment may be repeated in other figures corresponding to that embodiment, but may not be discussed specifically with reference to each corresponding figure. The figures are for illustrative purposes and may not be drawn to scale. Detailed Implementation

[0024] This disclosure relates to packaged semiconductor device devices, which may be referred to as semiconductor device modules, and associated methods for manufacturing such devices. The methods illustrated and described herein can be used to implement molded (e.g., transfer-molded) semiconductor device modules that overcome at least some of the disadvantages of prior art modules. In some embodiments, the described methods can be used to implement, for example, half-bridge power modules, full-bridge power modules, three-phase half-bridge power modules, multi-phase half-bridge power modules, etc., which are suitable for automotive, industrial, and / or consumer electronics applications. In some embodiments, the semiconductor device module may be referred to as an assembly, module, power semiconductor device module, semiconductor device assembly, electronic device assembly, etc.

[0025] At least one technical problem with existing power module implementations with press-fit pins is the overall cost and complexity associated with the components used to couple the fins to the power module. Another technical problem is the manufacturing cost and complexity of the lead frame for coupling the pins to the power module. Yet another technical problem is the lack of flexibility in the number and placement of pins relative to the module package.

[0026] At least one technical solution to the aforementioned technical problem is to implement such a power module using a modular pin assembly that is separate from the power module and can be easily attached to the power module, for example, near the end of the manufacturing process.

[0027] The technical benefits of the aforementioned technical solutions include reduced manufacturing costs and complexity, smaller overall size of the power module, and increased design flexibility, whereby the same power module can be used for applications with different pin requirements by changing the design of the modular pin assembly.

[0028] Figure 1A This is a front view of an example semiconductor device assembly 10 made according to the present disclosure. In the illustrated example, the semiconductor device assembly 10 may include a module 108 that may include a semiconductor die 102 electrically coupled to a substrate 104. The semiconductor device assembly 10 may also include a lead frame 106 coupled to the substrate 104 and the semiconductor die 102. The semiconductor device assembly 10 may also include a molding compound 130 encapsulating the substrate 104, the semiconductor die 102, and the lead frame 106.

[0029] In the illustrated example, semiconductor device assembly 10 is a press-fit lead package design in which at least one pin 140 extends vertically from semiconductor device assembly 10. Semiconductor device assembly 10 may be configured to be at least partially coupled to a PCB of an electrical system (not illustrated) via solderless press-fit lead connections through pin 140. In the illustrated example, pin 140 may be part of pin assembly 110 configured to be coupled to module 108. In the illustrated example, pin assembly 110 includes a base 120 formed of a molding compound. Base 120 may define a pin socket 135 including an opening in base 120 into which the end of pin 140 is inserted. Figure 1A An example semiconductor device assembly 10 with a pin socket 135 is shown. In one example, the pin assembly of this disclosure may include any number of pin sockets and corresponding pins. As described herein, the modular nature of the pin assembly 110 provides several benefits, including reduced manufacturing costs and complexity and increased design flexibility.

[0030] In some embodiments, the molding compound 130 and / or the base 120 may be formed of a molding material or compound, an encapsulating material, etc., and may be or may include a non-conductive layer or material. In some embodiments, the molding compound 130 and / or the base 120 are formed of a non-conductive material (such as epoxy resin), which may be formed (applied, etc.) using a transfer molding process or a compression molding process in conjunction with corresponding tools (e.g., molding jigs). In some embodiments, the molding compound may include a separate plastic housing that is included in a semiconductor device assembly.

[0031] Module 108 may also include at least one pin terminal 112, which is coupled to lead frame 106 and is designed and configured to be mechanically and electrically coupled to pin 140. In one example, pin terminal 112 extends from molding compound 130 of module 108. In one example, pin terminal 112 includes pin opening 116, which is designed and configured to receive a first end or terminal end of pin 140. In one example, opening 116 is spaced apart from side 118 of molding compound 130 of module 108 such that when pin assembly 110 is coupled to module 108, opening 116 aligns with pin socket 135 and pin 140.

[0032] Figure 1A The pin assembly 110 removed from module 108 is shown. During an example assembly or manufacturing process, pin terminals 112 may be inserted into the base 120 of pin assembly 110, with sides 122 of base 120 in close proximity or contact with sides 118 of module 108. This creates an interface between base 120 and module 108, extending between the front and rear sides of module 108 and between the front and rear sides of base 120 of pin assembly 110. After pin terminals 112 are inserted into base 120 and brought into contact with module 108, pin 140 may be inserted into pin socket 135, with the tip of pin 140 inserted into opening 116 of pin terminal 112, thereby connecting pin 140 to pin terminal 112. In one example, pin 140 provides an interlock to interlock base 120 to module 108. In some examples, the mechanical coupling of base 120 to module 108 can be further enhanced by adding an adhesive or sealant at the interface to adhere or seal side 122 of base 120 to side 118 of the module. In some examples, side 122 and side 118 may also include complementary recesses and protrusions that provide mechanical interlocking between base 120 and module 108.

[0033] Figures 1B to 1D These are illustrations showing the front view, first side view, and bottom side view of an example semiconductor device assembly 100, respectively. (See reference) Figures 1B to 1D The semiconductor device assembly 100 includes terminals 105a to 105d, which may be included in the lead frame of the semiconductor device assembly 100 (such as...). Figure 6B The example lead frame 602 shown below. As described in further detail below, the lead frame of the semiconductor device assembly 100 may include multiple lead frame portions, each including terminals 105a to 105d.

[0034] Although referred to by way of example as a leadframe in at least some portions of this embodiment, a leadframe may include any type of conductive portion (e.g., conductive portion, conductive terminal) of a package or semiconductor device assembly that provides an external connection point from the assembly to (e.g., a component encapsulated within the assembly, such as a semiconductor die). Therefore, a leadframe may be referred to as a conductive portion of a package. Furthermore, as mentioned above, the semiconductor device assembly described herein may include multiple terminals, such as those mentioned above. These multiple terminals may be power terminals, input signal terminals, output signal terminals, pins, etc. In some embodiments, multiple terminals may be included in, coupled to, and / or attached to a leadframe, as described herein.

[0035] In some specific implementations, one or more portions of the leadframe may be coupled to a substrate (such as a direct-bonded metal (DBM) substrate, for example, as described below at least regarding Figure 6A The pad (e.g., a bonding pad) on at least a portion of the described substrate. However, in short, also as Figures 1B to 1D As shown, the semiconductor device assembly 100 includes a module 108 that may include a molding compound 130 formed of a molding compound or other encapsulating material. Module 108 may include a metal layer 125 exposed on the rear side of the semiconductor device assembly 100 by the molding compound 130. In some embodiments, the metal layer 125 may be included in a substrate (e.g., a DBM substrate or other substrate) and used for attachment of the semiconductor device assembly 100 to heat dissipation components (such as heat sinks or fluid cooling jackets). In one example, the molding compound 130 is one or more components encapsulating the semiconductor device assembly 100 (including, for example, substrate assembly 604). Figure 6A ) and part of the lead frame 602 ( Figure 6B The outer layer of )).

[0036] In the illustrated example, semiconductor device assembly 100 is a press-fit package design in which a plurality of pins 140 (e.g., press-fit pins) extend vertically from semiconductor device assembly 100. Semiconductor device assembly 100 may be configured to be coupled at least partially to a PCB of an electrical system via solderless press-fit pin connections of pins 140. In the illustrated example, semiconductor device assembly 100 includes one or more pin assemblies 110, such as pin assembly 110a and pin assembly 110b, configured to be coupled to module 108. In the illustrated example, each pin assembly 110 includes a base 120 that can be formed by molding compound. Base 120 may define a plurality of pin sockets 135. The plurality of pins 140 are respectively disposed in the plurality of pin sockets 135. In the illustrated example, semiconductor device assembly 100 includes four pin sockets 135 in each pin assembly of pin assembly 110. In other examples, pin assemblies may include more or fewer pin sockets 135 and corresponding pins 140. As described herein, the modular nature of the pin assembly 110 offers several benefits, including reduced manufacturing costs and complexity and increased design flexibility. For ease of illustration, the base 120 of the pin assembly 110 is shown as transparent to illustrate a plurality of pin terminals 202 and a plurality of pin terminal openings 226 within the corresponding base 120 (hereinafter referred to as...). Figure 2 (as described).

[0037] In some embodiments, the molding compound 130 and / or the base 120 may be formed of a molding material or compound, an encapsulating material, etc., and may be or may include a non-conductive layer or material. In some embodiments, the molding compound 130 and / or the base 120 are formed of a non-conductive material (such as epoxy resin), which may be formed (applied, etc.) using a transfer molding process or a compression molding process in conjunction with corresponding tools (e.g., molding jigs). In some embodiments, the molding compound may include a separate plastic housing that is included in a semiconductor device assembly.

[0038] Figure 1C A side view of the semiconductor device assembly 100 is illustrated, for example, from the right side of the semiconductor device assembly 100, and Figure 1D Example of a bottom side view. (For instance...) Figure 1B and Figure 1CAs shown, pin 140 extends vertically from the front of module 108 through base 120 and away from the front of the module. In some embodiments, the portion of pin 140 extending outside base 120 may be inserted into a socket (or sockets) on a PCB of a corresponding electrical system (such as an inverter system for electric or hybrid vehicles, or other electrical systems). In some embodiments, pin 140 (and terminals 105a to 105d) may be plated or partially plated, for example, using solder plating. Such plating facilitates electrical attachment of the semiconductor device assembly 100 in the corresponding electrical system, for example, using a solder reflow process.

[0039] Figure 2 This is an exploded front view of the semiconductor device assembly 100, showing the pin assembly 110 removed from module 108 of the semiconductor device assembly 100. In one example, the pin assembly 110 and module 108 may be manufactured as separate components and then coupled together to form the semiconductor device assembly 100.

[0040] like Figure 2 As shown, module 108 includes a front side 204, opposing first sides 206a and second sides 206b, and opposing top and bottom sides 208. Terminal 105a extends from the top side 208 along a first direction, and terminals 105b to 105c extend from the bottom side 210 along a second direction. Module 108 may also include a plurality of pin terminals 202 that are coupled to a lead frame, such as the lead conductors of the lead frame, and are designed and configured to be mechanically and electrically coupled to corresponding pins in pins 140. In one example, pin terminal 202a extends from the first side 206a along a third direction, and pin terminal 202b extends from the second side 206b along a fourth direction (pin terminals 202a and 202b may be referred to individually or collectively as pin terminals 202). In one example, the third and fourth directions are substantially parallel and substantially perpendicular to the first and second directions. In one example, one or more pin terminals of pin terminals 202 have corresponding ends 211 and pin openings 212. Figure 2 (Only one of each is marked in the text), the pin opening is designed and constructed to receive a first end or terminal end of a pin (such as one of the pins in pin 140). In one example, the opening 212 on a given pin terminal is spaced apart from the corresponding side 206a or 206b of module 108 such that the opening 212 aligns with the corresponding pin socket 135 and pin 140 of pin assembly 110. Similarly, in one example, the pin socket 135 on a given pin assembly 110 is spaced apart from the corresponding side 222 of pin assembly 110 such that the pin socket 135 aligns with the opening 212 of the corresponding pin terminal 202.

[0041] In one example, the pin assembly 110 has a front side 220 and opposing first side 222 and second side 224, wherein the first side 222 is configured to be one of the sides 206 of the module 108 of the semiconductor device assembly 100. The first side 222 includes a plurality of pin terminal openings 226 (only one is marked on each pin assembly 110), which are designed and configured to slidably receive corresponding pin terminals among a plurality of pin terminals 202.

[0042] In one example, sides 206a, 206b of module 108 have shapes complementary to the shape of the first side 222 of pin assembly 110 to facilitate engagement and coupling between pin assembly 110 and module 108. In the illustrated example, sides 206a, 206b include a plurality of recesses 228 and protrusions 230 (one of which is marked on each side). The first side 222 of pin assembly 110 similarly includes a plurality of recesses 232 and protrusions 234. The recesses 228 of module 108 may have shapes and dimensions complementary to the shapes and dimensions of the protrusions 234 of pin assembly 110. The protrusions 230 of module 108 may have shapes and dimensions complementary to the shapes and dimensions of the plurality of recesses 232 of pin assembly 110. In one example, a plurality of pin terminals 202 are located at the midpoint of a corresponding recess 228, and a plurality of pin terminal openings 226 are located at the midpoint of a corresponding recess 232 for alignment of the plurality of pin terminals 202 and the plurality of pin terminal openings 226. In one example, the number of the plurality of recesses 228 in module 108 may be the same as the number of the plurality of pin terminals 202, and the number of the plurality of pin terminal openings 226 in pin assembly 110 may be the same as the number of the plurality of protrusions 234 in pin assembly 110.

[0043] refer to Figures 1B to 2In an exemplary assembly or manufacturing process, pin terminals 202 may be inserted into corresponding pin terminal openings 226 of one of the bases 120, and a first side 222 of the base 120 is in close proximity to or in contact with a side 206 of the module 108. This forms an interface 124 between the base 120 and the module 108, extending between the front side 204 and the rear side 150 of the module 108 and between the front side 220 and the rear side 152 of the corresponding base 120 of the pin assembly 110. In the illustrated example, the front side 204 of the module 108 is substantially aligned with the front side 220 of the base 120, the rear side 150 of the module 108 is substantially aligned with the rear side 152 of the base 120, and the thickness of the module 108 at its side 206 is substantially the same as the thickness of the base 120. In other examples, the thickness of one or more bases 120 may differ from that of the other bases in the base 120 and may differ from the thickness of the module 108. In some examples, the front side 204 of module 108 may be offset from one or both front sides 220 of base 120. In some examples, the rear side 150 of module 108 may be offset from one or both rear sides 152 of base 120.

[0044] After the pin terminal 112 is inserted into the corresponding base 120 and the base 120 is brought into contact with the module 108, the pin 140 can be inserted into the pin socket 135, and the end of the pin 140 is inserted into the opening 116 of the pin terminal 112, thereby connecting the pin 140 to the pin terminal 112. In one example, inserting or otherwise coupling or connecting the pin 140 to the pin terminal 112 acts as an interlock to lock the base 120 to the module 108. In some examples, the mechanical coupling of the base 120 to the module 108 can be further enhanced by applying an adhesive or sealant at the interface 124 to adhere the side 222 of the base 120 to the side 206 of the module 108. An adhesive or sealant may be applied to one or both of the first side 222 of the base 120 and / or the side 206 of the module 108 before bringing the first side 222 and the side 206 into contact. Alternatively or additionally, after the base 120 is coupled to the module 108, an adhesive or sealant may be applied to the interface 124 at the front side 204 of the module 108, the front side 220 of the base 120, and / or the rear side 150 of the module 108 and the rear side 152 of the base 120.

[0045] Semiconductor device assembly 100 is provided by way of example. In some examples, the number of plurality of pin terminals 202 and the number of plurality of pin terminal openings 226 may differ from the numbers shown. In one example, the shape of the sides 206a, 206b of module 108 and the shape of the first side 222 of pin assembly 110, or the number and position of pin terminals and pin terminal openings relative to recesses and protrusions, may differ from the illustrated example. For example, module 108 may define a protrusion including pin terminals extending therefrom (instead of pin terminals extending into recesses 228 or pin terminals other than those extending into recesses 228), and pin assembly 110 may define a recess including pin terminal openings (instead of pin terminal openings in protrusions or pin terminal openings other than those in protrusions), the recess being configured to engage the protrusion of module 108. In some examples, shapes other than square or rectangular recesses and protrusions, such as triangles or other polygons, may be used. In some examples, pin terminals may extend from both recesses and protrusions of the body of the semiconductor device assembly. In some examples, two or more pin terminals may extend from corresponding recesses or protrusions. In some examples, pin terminal openings may be located in both recesses and protrusions of the pin assembly. In some examples, two or more pin terminal openings may be located in corresponding recesses or protrusions.

[0046] Figure 3A It is along Figure 1B The cross-sectional side view of the semiconductor device assembly 100 taken by section line 3-3. Figure 3B It is along Figure 1B The cross-sectional view of the semiconductor device assembly 100 taken by section line 3-3, with pin 140 removed. Figure 3C This is a cross-sectional view of the end of one of the pins 140 in the insertion position and coupled to pin terminal 202, and Figure 3D One pin of pin 140 is shown. (Reference) Figures 3A to 3D In the illustrated example, the base 120 of the pin assembly 110 defines a plurality of pin sockets 135 in which pins 140 are disposed. In one example, each of the plurality of pin sockets 135 extends through the thickness of the base 120. The pin sockets 135 intersect with corresponding pin terminal openings in a plurality of pin terminal openings 226 in the base 120 (see also...). Figure 2 ( ) to receive pin terminal 202.

[0047] Each pin 140 may include a non-conductive body 304 molded to the pin 140 and may be formed of a molding compound, which may be, for example, thermoplastic or thermosetting, such as polybutylene terephthalate (PBT) or epoxy molding compound (EMC). In one example, the non-conductive body 304 may have a shape and size complementary to the shape and size of the first portions 302 of the plurality of pin sockets 135, such that the non-conductive body 304 is slidably disposed in the corresponding pin socket 135. The outer wall 306 of the non-conductive body 304 may be configured to engage the inner wall 308 of the corresponding first portion 302 of one of the pin sockets 135, thereby providing a support base for the pin 140 in the base 120 and for coupling the pin 140 to the base 120. The pin socket 135 may also include a second portion 310, which in one example may be a flared portion, in which a first end portion 312 corresponding to the pin 140 (also referred to herein as a terminal portion) is configured to be disposed.

[0048] For example Figure 3C As shown, in the assembled configuration, the first end portion 312 of the pin 140 is configured to insert into a corresponding opening in the opening 212 of the pin terminal 202, thereby effectively locking the pin assembly 110 into engagement with the module 108 of the semiconductor device assembly 100. In one example, the size or shape of the first end portion 312 of the pin 140 may be designed and configured to interfere with the opening 212 of the pin terminal 202 and / or deform the opening. For example, the size of the first end portion 312 may be larger than the size of the opening 212. For example, the cross-sectional shape of the first end portion 312 may be different from the shape of the opening 212. By way of example, the first end portion 312 may have a square cross-sectional shape, and the opening 212 may have a circular cross-sectional shape.

[0049] During the assembly process, the base 120 of the pin assembly 110 can be coupled to the module 108 by first inserting a plurality of pin terminals 202 into the corresponding pin terminal openings 226 and pressing them into engagement until a plurality of recesses 228 and protrusions 230 of the module 108 engage with and are inserted into a plurality of recesses 232 and protrusions 234 of the base 120 of the pin assembly 110 (see [link]). Figure 2 After the base 120 is engaged with the module 108, the pin 140 can then be inserted into the corresponding pin socket 135, and the first end portion 312 of the pin is inserted into the opening 212 of the plurality of pin terminals 202 to mechanically and electrically couple the pin 140 to the lead frame 602 of the module 108.

[0050] In the illustrated example, pin 140 is a press-fit pin and includes a press-fit end 320 that includes a deformable press-fit eye 322 configured to insert into an opening in the PCB. In other examples, in addition to or instead of press-fit pins, the pin assembly 110 of this disclosure may include solder pins.

[0051] Figure 4A This is the front view of pin 402, and Figure 4B This is a side view of pin 402. Pin 402 is a press-fit pin and includes a non-conductive body 404 configured to be disposed in a pin socket of a pin assembly (such as a pin socket 135 of pin assembly 110). Similar to the non-conductive body 304 of pin 140 (see, for example, [link to previous section]). Figure 3D Similar to the example shown, the non-conductive body 404 includes a first end 406 having a shape and dimensions complementary to the shape and dimensions of a pin socket at the base of the pin assembly (such as a pin socket in pin socket 135 of base 120). The non-conductive body 404 also has a second end 408 configured as a pin guide for engaging a socket of an electrical system (such as an inverter system) to which the semiconductor device assembly 100 is configured to be coupled. In the illustrated example, the second end 408 of the non-conductive body 404 has a tapered shape for guiding a pin 402 into the socket.

[0052] Figure 5A This is the front view of pin 502, and Figure 5B This is a side view of pin 502. Figure 5C This is a front cross-sectional view of pin 502 inserted into socket 520 of an electrical system (such as an inverter system), and Figure 5D This is a cross-sectional side view of pin 502 inserted into socket 520. (Reference) Figures 5A to 5D In the illustrated example, pin 502 includes a non-conductive body 504 configured to be disposed in a pin socket of a pin assembly (such as a pin socket 135 of pin assembly 110). Pin 502 has a first end portion 510 or terminal end portion configured to be coupled to a terminal of semiconductor device assembly 100 (such as a pin terminal of pin terminal 202). Pin 502 has a second end portion 512 or press-fit end portion including a deformable press-fit eye configured to press-fit into an opening 524 of PCB 526 of socket 520.

[0053] With pin 402, the non-conductive body 404 ( Figure 4A , Figure 4BSimilar to the example shown, the non-conductive body 504 includes a first end 506 having a shape and dimensions complementary to the shape and dimensions of a socket of a pin assembly (such as a pin socket 135 of pin assembly 110). The non-conductive body 504 also has a second end 508 configured to engage a pin guide 522 of a socket 520 of an electrical system (such as an inverter system). In the illustrated example, the second end 508 of the non-conductive body 504 has a tapered shape for guiding a pin 502 into the socket 520. Figure 5C and Figure 5D As shown, the second end 508 has a shape and size that are complementary to the shape and size of the pin guide 522.

[0054] In one example, the non-conductive body 504 may be designed and configured as a multifunctional component providing one or more functions. For example, the non-conductive body 504 may provide a base for coupling pin 502 to the base of a pin assembly (such as base 120) (see, for example, see...). Figure 3A The non-conductive body 504 may also be designed and configured to serve as a guide member for guiding the pin 502 into the socket 520. The non-conductive body 504 may also be designed and configured to act as a structural member that structurally supports the pin 502 when the semiconductor device assembly 100 is coupled to the PCB 526. For example, the non-conductive body 504 may have a length designed and configured to extend from the pin guide 522 to the base 120 when the semiconductor device assembly 100 is coupled to the PCB 526, and act as a structural support member for the portion of the pin 502 extending between the base 120 and the pin guide 522.

[0055] Refer again Figure 4A and Figure 4B The non-conductive body 404 can be similarly designed and constructed as a multifunctional component. Non-conductive bodies 404 and 504 are two non-limiting examples and illustrate the ability to customize semiconductor device assembly 100 for a given application. For example, the pin assembly 110 can be customizable, allowing the same module 108 to be used in various electrical systems requiring different numbers and locations of pins and sockets of different shapes and sizes. The body portions of the pins, such as non-conductive bodies 304, 404, or 504, can be customized for a given application, allowing the shape or size to vary depending on the application.

[0056] Figure 6A An example substrate assembly 604 is illustrated that can be implemented in module 108 of semiconductor device assembly 100. Figure 6BAn example is illustrated of a semiconductor device assembly 100 prior to the application of a molding compound to module 108 and pin assembly 110 via, for example, an injection molding process. For reference purposes, Figure 6B The dashed lines in the diagram indicate the outer periphery of the molding compound 130 and the base 120 after the molding process is performed.

[0057] refer to Figure 6A and Figure 6B In the illustrated example, module 108 and pin assembly 110 can be formed from a common lead frame 602 component, which simplifies manufacturing and reduces manufacturing costs compared to manufacturing them separately. In other examples, module 108 and pin assembly 110 can be formed separately. Figure 6A An example substrate assembly 604 is shown, which may include a substrate 605 that may be a DBM substrate and a plurality of semiconductor dies 625 (only one is labeled) and a plurality of semiconductor dies 635 (only one is labeled) coupled (electrically coupled, physically coupled) to the substrate 605.

[0058] In some embodiments, the direct-bonded metal (DBM) substrate may include an insulating layer disposed between a first metal layer and a second metal layer. The insulating layer may be, for example, a ceramic layer. In some embodiments, the insulating layer may be or may include, for example, a ceramic material, such as alumina (Al2O3) or aluminum nitride (AlN). In some embodiments, the DBM substrate can be formed by bonding one or more metal layers (e.g., a first metal layer, a second metal layer) to an insulating layer. In some embodiments, one or more metal layers may be bonded to an insulating layer using, for example, high-temperature processes and / or lamination processes. In some embodiments, the first metal layer and / or the second metal layer of the DBM substrate may be or may be used as a heat sink. In some embodiments, the first metal layer and / or the second metal layer (such as metal layer 125 of semiconductor device assembly 100) may be coupled to a heat sink or other heat dissipation component. In some embodiments, at least a portion of one or more of the first metal layer or the second metal layer may be formed by, for example, a heat sink or other heat dissipation component. Figure 1B The molded material shown is exposed.

[0059] In some embodiments, the first and / or second metal layers of the DBM substrate may be or may include patterned metal layers comprising one or more conductive traces. In some embodiments, the first and / or second metal layers may be or may include patterned layers configured to form one or more circuits, one or more patterned metal layers or metal layer portions, one or more conductive blind vias and / or through-holes, etc.

[0060] In some embodiments, the DBM substrate may be or may include a direct-bonded copper (DBC) substrate (e.g., a DBM having copper metal layers). In some embodiments, such as in a DBC substrate embodiment, the first metal layer and / or the second metal layer is a copper layer.

[0061] For example, in Figure 6A In this example, substrate 605 includes at least one metal layer 610a (e.g., at least one first patterned metal layer or metal layer portion) and metal layer 610b (e.g., a second patterned metal layer or metal layer portion). In this example, Figure 1B The metal layer 125 shown can be as follows Figure 1B and Figure 1C The shown arrangement is on opposite sides of substrate 605 (e.g., on opposite sides of the insulating layer of substrate 605).

[0062] like Figure 6A As shown, substrate assembly 604 includes a plurality of semiconductor dies 625 (only one is labeled) coupled (electrically or physically) to at least one metal layer 610a. Substrate assembly 604 also includes a plurality of semiconductor dies 635 coupled (electrically or physically) to metal layer 610b. In some embodiments, the plurality of semiconductor dies 625 and 635 may be coupled to their respective metal layers using a variety of different processes (such as soldering or sintering).

[0063] In some specific implementations, welding may be or may include a process of joining two surfaces (e.g., a metal surface and a semiconductor surface) together using a molten filler metal (e.g., a metal alloy, tin (Sn), lead (Pb), silver (Ag), copper (Cu)) that may be referred to as solder.

[0064] In some embodiments, sintering can be, or can include, a process of fusing particles together into a solid substance using, for example, a combination of pressure and / or heat without melting the material. In some embodiments, sintering can include agglomerating a material (e.g., a powdered material) into a solid or porous substance by heating the material and typically also compressing it without liquefying it. In some embodiments, materials that can be used for sintering can include metals such as silver (Ag), copper (Cu), and / or metal alloys. In some embodiments, sintered joints can have desired electrical and / or thermal conductivity, durability, and a relatively high melting temperature.

[0065] In some specific implementations, one or more components of the parts described herein may be coupled using materials such as solder, sintered (e.g., silver, copper) and / or other metal-to-metal or metal-to-semiconductor bonding materials.

[0066] In some specific implementations, component coupling can be performed using, for example, soldering processes, sintering processes (e.g., silver sintering, copper sintering) and / or other metal-to-metal or metal-to-semiconductor bonding processes.

[0067] By way of example, and for illustrative purposes, the plurality of semiconductor dies 625 and the plurality of semiconductor dies 635 may include corresponding SiC power transistors (e.g., MOSFET transistors) that can be used to implement high-side switching (where the corresponding transistors are connected in parallel) and low-side switching (where the corresponding transistors are connected in parallel) of a half-bridge circuit. In some specific embodiments, other circuitry may be implemented and / or combinations of transistors may be included in the substrate assembly 604.

[0068] For example, in some embodiments, one or more semiconductor dies (e.g., one or more semiconductor components) may be or may include power semiconductor dies. In some embodiments, one or more semiconductor dies may be one or more of the following (e.g., may be part of one or more of such dies) or may include one or more of the following: metal-oxide-semiconductor field-effect transistor (MOSFET) devices, insulated-gate bipolar transistors (IGBTs), integrated circuits (ICs), inverters, power conversion circuits, bridge circuits, fast recovery diodes (FRDs), and / or diodes, etc. In some embodiments, one or more semiconductor dies may be components for electric vehicles (EVs) (e.g., may be part of such components) or may include such components.

[0069] The specific embodiments described herein may include more than one semiconductor die, as in substrate assembly 604. In some embodiments, different semiconductor substrates (e.g., silicon carbide (SiC) substrates, silicon (Si) substrates, gallium nitride (GaN) substrates) may be used to fabricate different semiconductor dies (when more than one semiconductor die is included). In other words, different semiconductor dies may be fabricated, for example, on different semiconductor wafers or materials. This may be referred to as a hybrid die configuration. For example, a first semiconductor die may be formed using a SiC substrate, and a second semiconductor die (separate from the first semiconductor die) may be formed using a silicon substrate. As another example, an IGBT or MOSFET may be fabricated using a SiC substrate, while a controller may be fabricated using a silicon substrate.

[0070] In an example implementation, the first semiconductor die may be connected to the second die, for example, via an electrical connection (e.g., a wire bond, an electrical clamp) extending directly from the first die into the second die, or via a trace formed in a first conductive layer (e.g., a metal layer) of the electronic power substrate. The first semiconductor dies among a plurality of semiconductor dies may also be connected to leadframe posts, leadframe portions, and / or leadframe terminals via electrical connections (such as wire bonds or conductive clamps).

[0071] refer to Figure 6B In the illustrated example, leadframe 602 includes an outer frame 612 that is removed during the trimming process and after the molding process. The outer frame 612 may include multiple alignment features 613 (only one is labeled), such as openings in the leadframe, for performing alignment processes during manufacturing. Leadframe 602 also includes a module portion 614 that includes leadframe components of module 108 and pin assembly portions 616a, 616b, wherein a base 120 of pin assembly 110 is formed.

[0072] The module portion 614 of the leadframe 602 includes multiple leadframe portions 620 (two only) for connecting the substrate assembly 604 to external components. Terminals 105a-105d are also included in the multiple leadframe portions 620. The module portion 614 also includes multiple lead conductors 622 (two only) for connection to pins 140 via multiple lead terminals 202. Various components of the leadframe 602 can be connected using tie rods 624 (one marked), which are removed as part of a trimming operation performed during the manufacturing process for producing a semiconductor device assembly (e.g., semiconductor device assembly 100). For example, such tie rods can maintain the relative arrangement of the components of the leadframe 602 during the assembly manufacturing process.

[0073] The lead frame 602 may be coupled to the substrate assembly 604 (stacked, vertically stacked) using methods described herein, such as soldering and / or sintering. In addition to electrically coupling one or more portions of the lead frame 602 to the substrate assembly 604, one or more other portions of the lead frame 602 may be coupled to the substrate assembly 604 without establishing an electrical connection to the substrate assembly 604.

[0074] In one example, terminal 105c of leadframe 602 serves as the negative power supply terminal (e.g., DC-, electrical ground, etc.) for the half-bridge circuit, and terminals 105b and 105d serve as the power supply terminals (DC+, Vcc, etc.) for the half-bridge circuit. Terminals 105b and 105d may be physically and electrically coupled to metal layer 610a, which provides electrical connections from terminals 105b and 105d to the corresponding drain terminals of the high-side transistors of the half-bridge circuit (e.g., of a plurality of semiconductor dies 625). Terminal 105a may serve as the output AC terminal.

[0075] Figure 6B Also shown is a lead bonding (e.g., an attached bonding lead 640 (only one is labeled)). The bonding lead 640 can electrically couple the module portion 614 of the lead frame 602 to a plurality of semiconductor dies 625, a plurality of semiconductor dies 635, or other parts of the assembly.

[0076] Figure 7 An example of a transfer-molded press-fit pinframe assembly 700, also referred to herein as a pinframe assembly, is shown, which includes a plurality of pins 402 coupled to a frame 702 (see also...). Figure 4A , Figure 4B The lead frame assembly 700 can be used to efficiently manufacture multiple leads, such as those disclosed herein. For example, the lead frame assembly 700 can be used to manufacture multiple pre-molded press-fit leads, such as lead 402, which can then be detached from or trimmed from the frame 702 and inserted into the base 120 to form the lead assembly 110.

[0077] Frame 702 may include gate 704, such as an epoxy molding compound (EMC) gate, for forming the non-conductive body 404 of pin 402 during transfer molding. Pin frame assemblies (such as pin frame assembly 700) can provide customization benefits, allowing semiconductor device assembly 100 to be tailored to a given electrical system. For example, frame 702 and gate 704, together with the transfer molding system, can be varied to adjust the size and shape of the non-conductive body (such as non-conductive body 404) to conform to the shape and size of a given electrical system, thereby allowing semiconductor device assembly 100 to be easily compatible with different systems having different pin interface designs.

[0078] The modular nature of the pin assemblies disclosed herein provides new degrees of freedom or flexibility in the design and configuration of the number and location of pins, which can facilitate the configuration of semiconductor device assemblies for a given application. For example, the number and location of pins in the semiconductor device assemblies of this disclosure, as well as the size of the pin assemblies and the sides of the module to which the pin assemblies are attached, can vary. For example, semiconductor device assembly 100 includes two pin assemblies 110 coupled to opposite sides 206a, 206b of module 108. In other examples, the semiconductor device assemblies of this disclosure may include pin assemblies coupled to additional or other parts of the module. For example, in addition to or instead of being coupled to opposite left and right sides 206a and 206b of the module, pin assemblies may be coupled to the top side 208 or the bottom side 210 or to the front side 204.

[0079] In one example, pin assembly 110 has a track shape and includes a linear array of pins 140. In other examples, the pin assembly of this disclosure may have other shapes and may have different numbers of pins located at different positions on the base of the pin assembly, and may have different pin-to-pin pitches. For example, the pin-to-pin pitch may be greater than or less than that of semiconductor device assembly 100, the pin-to-pin pitch may vary on the pin assembly, the pin pattern may not be linear, for example, it may be arranged in a square, rectangle or other pattern, and the number of pins in the pin assembly may be different.

[0080] Figures 8A to 10D Examples of specific implementations of semiconductor device assemblies with different numbers and locations of pins are illustrated. The examples shown are provided by way of example only.

[0081] Figures 8A to 8C An example of a semiconductor device assembly 800 is shown, comprising pin assemblies 810a, 810b having a different pin arrangement than that of semiconductor device assembly 100. For example, the number of pin rows may vary, and the number of pin rows in two or more pin assemblies may be different. Figure 8A This is a front view of semiconductor device assembly 800. Figure 8B This is a right-side view of semiconductor device assembly 800, and Figure 8C This is a bottom view of semiconductor device assembly 800. (Reference) Figures 8A to 8C Semiconductor device assembly 800 has a similarity to semiconductor device assembly 100 ( Figures 1B to 1DThe semiconductor device assembly 800 includes a configuration and terminals 805a, 805b, 805c, and 805d, which may be included in a lead frame of the semiconductor device assembly 800. The lead frame may be coupled to a pad (e.g., a bonding pad) on at least a portion of a substrate, such as a direct bond metal (DBM) substrate, which may include a metal layer 825. The semiconductor device assembly 800 includes a module 808, which may include a molding compound layer 830 formed of a molding compound or other encapsulating material. The metal layer 825 of the DBM substrate may be exposed through the molding compound layer 830 and used to attach the semiconductor device assembly 800 to a heat dissipation component, such as a heat sink or fluid cooling jacket.

[0082] In the illustrated example, semiconductor device assembly 800 is a press-fit package design in which a plurality of pins 840 (e.g., press-fit pins) extend vertically from semiconductor device assembly 800. Semiconductor device assembly 800 may be configured to be coupled at least partially to a PCB of an electrical system via solderless press-fit pin connections of pins 840. In the illustrated example, semiconductor device assembly 800 includes one or more pin assemblies 810, such as pin assemblies 810a and 810b, configured to be coupled to module 808. (Compared to semiconductor device assembly 100...) Figures 1B to 1D Similarly, the pin assembly 810 is configured to be removably coupled to the module 808 by inserting pin terminals (not shown) into corresponding pin terminal openings in the base 820 of the pin assembly 810. Moreover, like the semiconductor device assembly 100, the side of the module 808 may have a series of recesses and protrusions, and the side of the pin assembly 810 may have a set of mating recesses and protrusions for engagement between the two to facilitate a secure alignment and engagement between the module 808 and the pin assembly 810.

[0083] In the illustrated example, the pin assembly 810 includes corresponding bases 820a, 820b that can be formed from a molding compound. The bases 820 may define a plurality of pin sockets 835 (each base is marked with one pin socket). A plurality of pins 840 are respectively disposed in the plurality of pin sockets 835. In one example, one or more pins of the pins 840 may include a corresponding non-conductive body 804 that can be disposed (e.g., inserted) into the corresponding pin socket 835.

[0084] Unlike semiconductor device assembly 100, which includes two pin assemblies 110 having substantially the same configuration and number of pins 140, pin assemblies 810a and 810b have different configurations. Pin assembly 810a has a configuration similar to pin assembly 110a and includes a linear array or column of pins 840 and substantially equal pin-to-pin spacing or pitch. Pin assembly 810b includes two columns 842a, 842b or a linear array of pins 840, and the pins in the two columns are substantially aligned in corresponding rows 844a, 844b, 844c, 844d, 844d. In other examples, the pin assembly of this disclosure may have three or more columns of pins 840.

[0085] The pin-to-pin spacing or pitch of the pins 840 in the pin assembly 810b may be substantially the same. In one example, the pins 840 in a given row 844 of the pin assembly 810b may be coupled to a common pin terminal (not shown) of the lead frame of the semiconductor device assembly 800. Thus, in the illustrated example, the pin assembly 810b includes four pairs of pins 840 located in corresponding rows 844, and each pair is coupled to a common pin terminal. In one example, the current capability of a given pin terminal coupled to two pins may be greater than the current capability of a pin terminal coupled to one pin. For example, the current capability of a pin terminal coupled to two pins 840 and its corresponding lead terminal may be in the range of approximately 40A to approximately 50A compared to approximately 20A to approximately 25A for a pin terminal coupled to one pin.

[0086] Pin assemblies 810a and 810b have corresponding widths Wa and Wb and lengths La and Lb. The lengths La and Lb of pin assemblies 810 are substantially the same, and may be substantially the same as the length Lm of module 808. In one example, the width Wb of pin assembly 810b is greater than the width Wa of pin assembly 810a to accommodate an additional column 842 of pins 840. For example, the size of the base of the pin assembly (such as one of the bases 820 of pin assembly 810) may vary to take into account the number and spatial pattern of pins (such as pins 840) that may be required in the base for a given application. In the illustrated example, semiconductor device assembly 800 is designed and configured to be coupled to an electrical system that requires two columns of pins 840 on one side of module 808 and one column of pins 840 on the other side of the module. Base 820b has a wider width Wb than base 820a to accommodate the additional column of pins 840.

[0087] Figures 9A to 9D An example of a semiconductor device assembly 900 is shown, including a pin assembly 910 having a different pin arrangement than that of semiconductor device assembly 100. For example, the number and spacing of pins may vary between columns of pins, and the columns of pins may be staggered. Figure 9A This is a front view of semiconductor device assembly 900. Figure 9B This is a left-side view of semiconductor device assembly 900. Figure 9C This is a right-side view of semiconductor device assembly 900, and Figure 9D This is a bottom view of semiconductor device assembly 900. Figure 9B Pin 940 coupled to pin assembly 910a is shown, and pins coupled to pin assembly 910b are omitted for clarity. Figure 9C Pin 940 coupled to pin assembly 910b is shown, and pins coupled to pin assembly 910a are omitted for clarity.

[0088] refer to Figures 9A to 9D Semiconductor device assembly 900 has a similarity to semiconductor device assembly 100 ( Figures 1B to 1D The semiconductor device assembly 900 includes a configuration and terminals 905a, 905b, 905c, and 905d, which may be included in a lead frame of the semiconductor device assembly 900. The lead frame may be coupled to a pad (e.g., a bonding pad) on at least a portion of a substrate, such as a direct bond metal (DBM) substrate, which may include a metal layer 925. The semiconductor device assembly 900 includes a module 908 that may include a molding compound layer 930 formed of a molding compound or other encapsulating material. The metal layer 925 of the DBM substrate may be exposed through the molding compound layer 930 and used to attach the semiconductor device assembly 900 to a heat dissipation component, such as a heat sink or fluid cooling jacket.

[0089] In the illustrated example, semiconductor device assembly 900 is a press-fit package design in which a plurality of pins 940 (e.g., press-fit pins) extend vertically from semiconductor device assembly 900. Semiconductor device assembly 900 may be configured to be coupled at least partially to a PCB of an electrical system via solderless press-fit pin connections of pins 940. In the illustrated example, semiconductor device assembly 900 includes one or more pin assemblies 910, such as pin assemblies 910a and 910b, configured to be coupled to module 908. (Compared to semiconductor device assembly 100...) Figures 1B to 1DSimilarly, pin assembly 910 is configured to be removably coupled to module 908 by inserting pin terminals (not shown) into corresponding pin terminal openings in base 920 of pin assembly 910. Pin assembly 910a is coupled to left side 912 of module 908, and pin assembly 910b is coupled to right side 914 of module 908. Moreover, as with semiconductor device assembly 100, the side of module 908 may have a series of recesses and protrusions, and the side of pin assembly 910 may have a set of mating recesses and protrusions for engagement between the two to facilitate secure alignment and engagement between module 908 and pin assembly 910.

[0090] In the illustrated example, pin assemblies 910a, 910b include corresponding bases 920a, 920b that can be formed from a molding compound. Base 920 may define a plurality of pin sockets 935 (each base is marked with one pin socket). A plurality of pins 940 are respectively disposed in the plurality of pin sockets 935. In one example, one or more pins of pins 940 may include a corresponding non-conductive body 904 that can be disposed (e.g., inserted) into the corresponding pin socket 935.

[0091] Unlike semiconductor device assembly 100, which includes two pin assemblies 110 having substantially the same configuration and number of pins 140, pin assemblies 910a and 910b have different configurations. The configuration of pin assembly 910a is similar to that of semiconductor device assembly 800. Figure 8A The pin assembly 810b, with two columns 942a, 942b or linear arrays of pins 940, and the pins in the two columns substantially aligned in corresponding rows 944a, 944b, 944c, 944d. The pin-to-pin spacing or pitch of the pins 940 in the pin assembly 910b may be substantially the same. In one example, the pins 940 in a given row 944 of the pin assembly 910b may be coupled to a common pin terminal (not illustrated) of the lead frame of the semiconductor device assembly 900. Thus, in the illustrated example, the pin assembly 910b includes four pairs of pins 940 located in corresponding rows 944, and each pair is coupled to a common pin terminal.

[0092] Similar to pin assembly 910a, pin assembly 910b includes two columns 946a, 946b of pins 940. Unlike pin assembly 910a, the columns of pin assembly 910b are interleaved or offset, resulting in eight rows 948a, 948b, 948c, 948d, 948e, 948f, 948g, 948h of pins 940, with only one pin in each row, and each pin can be coupled to a different corresponding pin terminal (not illustrated). Therefore, the lead frame of semiconductor device assembly 900 can have a greater number of pin terminals on the right side 914 of module 908 than on the left side 912, and the base 920b can have a greater number of pin terminal openings than the base 920a.

[0093] Pin assemblies 910a and 910b have corresponding widths Wa and Wb and lengths La and Lb. The lengths La and Lb of pin assemblies 910 are substantially the same, and the length can be substantially the same as the length Lm of module 908. In one example, the width Wb of pin assembly 910b is substantially the same as the width Wa of pin assembly 910a.

[0094] Figures 10A to 10D An example of a semiconductor device assembly 1000 is shown, including a pin assembly 1010 having a different pin arrangement than that of semiconductor device assembly 100. For example, the number and spacing of the pins may vary between columns of pins, and the columns of pins may be staggered. Figure 10A This is a front view of semiconductor device assembly 1000. Figure 10B This is a left-side view of semiconductor device assembly 1000. Figure 10C This is a right-side view of the semiconductor device assembly 1000, and Figure 10D This is a bottom side view of the semiconductor device assembly 1000. Figure 10B Pin 1040 coupled to pin assembly 1010a is shown, and pins coupled to pin assembly 1010b are omitted for clarity. Figure 10C Pin 1040 coupled to pin assembly 1010b is shown, and pins coupled to pin assembly 1010a are omitted for clarity.

[0095] refer to Figures 10A to 10D Semiconductor device assembly 1000 has a similar structure to semiconductor device assembly 100 ( Figures 1B to 1DThe semiconductor device assembly 1000 includes a configuration and terminals 1005a, 1005b, 1005c, and 1005d, which may be included in a lead frame of the semiconductor device assembly 1000. The lead frame may be coupled to a pad (e.g., a bonding pad) on at least a portion of a substrate, such as a direct bond metal (DBM) substrate, which may include a metal layer 1025. The semiconductor device assembly 1000 includes a module 1008, which may include a molding compound layer 1030 formed of a molding compound or other encapsulating material. The metal layer 1025 of the DBM substrate may be exposed through the molding compound layer 1030 and used to attach the semiconductor device assembly 1000 to a heat dissipation component, such as a heat sink or fluid cooling jacket.

[0096] In the illustrated example, semiconductor device assembly 1000 is a press-fit package design in which a plurality of pins 1040 (e.g., press-fit pins) extend vertically from semiconductor device assembly 1000. Semiconductor device assembly 1000 may be configured to be coupled at least partially to a PCB of an electrical system via solderless press-fit pin connections of pins 1040. In the illustrated example, semiconductor device assembly 1000 includes one or more pin assemblies 1010, such as pin assemblies 1010a and 1010b, configured to be coupled to module 1008. (The last sentence appears to be incomplete and possibly refers to a different example.) Figures 1B to 1D Similarly, pin assembly 1010 is configured to be removably coupled to module 1008 by inserting pin terminals (not shown) into corresponding pin terminal openings in base 1020 of pin assembly 1010. Pin assembly 1010a is coupled to left side 1012 of module 1008, and pin assembly 1010b is coupled to right side 1014 of module 1008. Moreover, like semiconductor device assembly 100, the side of module 1008 may have a series of recesses and protrusions, and the side of pin assembly 1010 may have a set of mating recesses and protrusions for engagement between the two to facilitate secure alignment and engagement between module 1008 and pin assembly 1010.

[0097] In the illustrated example, pin assemblies 1010a and 1010b include corresponding bases 1020a and 1020b that can be formed from a molding compound. Base 1020 may define a plurality of pin sockets 1035 (one pin socket is marked on each base). A plurality of pins 1040 are respectively disposed in the plurality of pin sockets 1035. In one example, one or more pins of pins 1040 may include a corresponding non-conductive body 1004 that can be disposed (e.g., inserted) into the corresponding pin socket 1035.

[0098] Unlike semiconductor device assembly 100, which includes two pin assemblies 110 having substantially the same configuration and number of pins 140, pin assemblies 1010a and 1010b have different configurations. Pin assembly 1010a includes two columns 1042a, 1042b or linear arrays of pins 1040, wherein the number and spacing of pins 1040 in the two columns 1042 are different. Pin assembly 1010a includes six rows 1044a, 1044b, 1044c, 1044d, 1044e, and 1044f of pins 1040. Some rows of 1044 have two pins 1040 (e.g., rows 1044a and 1044f), while other rows of 1044 have only one pin (e.g., rows 1044b to 1044e). The pin-to-pin spacing or pitch of pins 1040 in column 1042a varies, while the spacing in column 1042b is substantially the same. Pins 1040 in rows 1044a and 1044f can be coupled to a common pin terminal, while pins 1040 in rows 1044b to 1044e can each be coupled to different pin terminals.

[0099] Pin assembly 1010b may similarly include two columns 1046a, 1046b or a linear array of pins 1040, wherein the number and spacing of pins 1040 in the two columns 1046 are different. Pin assembly 1010b includes four rows 1048a, 1048b, 1048c, 1048d of pins 1040. A row (e.g., row 1048d) includes two pins 1040, while rows 1048a to 1048c each include only one pin. The pin-to-pin spacing or pitch of pins 1040 in both columns 1046a and 1046b is varied. Pins 1040 in row 1048d may be coupled to a common pin terminal, while pins 1040 in rows 1048a to 1048c may each be coupled to a different pin terminal.

[0100] Therefore, the lead frame of the semiconductor device assembly 1000 may have a larger number of pin terminals on the left side 1012 than on the right side 1014 of the module 1008 (e.g., six pin terminals in six rows 1044a to 1040f for coupling to pins 1044), and the base 1020a may have a larger number of pin terminal openings than the corresponding base 1020b.

[0101] Pin assemblies 1010a and 1010b have corresponding widths Wa and Wb and lengths La and Lb. The lengths La and Lb of pin assemblies 1010 are substantially the same, and the length may be substantially the same as the length Lm of module 1008. In one example, the width Wb of pin assembly 1010b is substantially the same as the width Wa of pin assembly 1010a.

[0102] Figure 11 This is an example of something used in the production of semiconductor device components (such as...) Figures 1B to 1D The flowchart of example method 1100 for component 100 (and the various sub-components described herein) is also provided. Therefore, for illustrative purposes, reference is also made to... Figures 1B to 7 Description method 1100.

[0103] At operation 1105, the method includes attaching a semiconductor die to, for example, a substrate. For example, operation 1105 may include depositing (printing, dispensing, placing, etc.) an adhesive material on substrate 605 of substrate assembly 604 (e.g., on metal layers 610a and 610b). After applying the adhesive material (which may be a solder preform, solder paste, sintered preform, sintered paste, and / or other conductive adhesive material), a plurality of semiconductor dies 625 and a plurality of semiconductor dies 635 may be positioned (placed, etc.) on corresponding portions of the deposited adhesive material.

[0104] At operation 1110, the method may include attaching the lead frame 602 to the substrate assembly 604, such as by means of... Figure 6B The layout shown.

[0105] At operation 1115, method 1100 may include an adhesive printing operation (or dispensing operation) to apply a conductive adhesive for attaching conductive clips to corresponding contact pads on leadframe 602 and a plurality of semiconductor dies 625 and a plurality of semiconductor dies 635. At operation 1120, the method may include soldering and / or sintering operations to physically and electrically couple components of substrate assembly 604 and leadframe 602 to each other using the conductive adhesive of operations 1105 and 1115. In some embodiments, operations other than soldering or sintering may be performed, such as a curing operation for a conductive epoxy adhesive.

[0106] At operation 1125, a bonding lead (e.g., bonding lead 640) can be used to form a lead bond.

[0107] At operation 1130, method 1100 may include a molding operation (e.g., pass molding) to apply a molding compound, such as to form molding compound 130 of module 108 and base 120 of pin assembly 110.

[0108] At operation 1135, method 1100 may include trimming and forming operations, which may include removing the tie rod 624 of the lead frame 602 and, in some examples, forming (e.g., bending) terminals, such as terminal 105a.

[0109] At operation 1140, the method may include attaching the base of the pin assembly 110 to the module 108. For example, pin terminals 202 of the module 108 may be inserted into a plurality of pin terminal openings 226 of the base 120 until the sides of the base 120 are coupled and engaged with the sides 206a, 206b of the module 108.

[0110] At operation 1145, method 1100 may include inserting pin 140 into a plurality of pin sockets 135 of pin assembly 110 and into an opening 212 of a corresponding pin terminal 202.

[0111] At operation 1150, the completed semiconductor device assembly 100 can be functionally tested and then shipped to, for example, a customer for inclusion in a corresponding electrical or electronic system.

[0112] In some aspects, the technology described herein relates to a semiconductor device assembly comprising: a module including: a semiconductor die electrically coupled to a substrate; a lead frame coupled to the substrate and the semiconductor die; and a molding compound encapsulating the substrate, the semiconductor die, and the lead frame, wherein the lead frame includes pin terminals extending from the molding compound; and a pin assembly including: a base coupled to the module; and pins disposed in pin sockets of the base; wherein pin terminals are inserted into the base, and terminal ends of the pins are coupled to pin terminals.

[0113] In some respects, the techniques described herein relate to semiconductor device assemblies in which the base includes pin terminal openings into which pin terminals are inserted.

[0114] In some respects, the techniques described herein relate to semiconductor device components, wherein the molding compound is a first molding compound and the base is formed of a second molding compound.

[0115] In some respects, the techniques described herein relate to semiconductor device assemblies in which a first side of a base contacts a second side of a module, the first and second sides forming an interface extending between the front and rear sides of the module.

[0116] In some respects, the techniques described herein relate to semiconductor device assemblies that also include at least one of an adhesive or sealant applied at the interface.

[0117] In some respects, the techniques described herein relate to semiconductor device assemblies, wherein a molding compound is a first molding compound, a base is formed of a second molding compound, and the second molding compound of the base defines an interface with the first molding compound of the module.

[0118] In some respects, the techniques described herein relate to semiconductor device assemblies in which the pins lock the base to the module when the pins are positioned in a pin socket and coupled to pin terminals.

[0119] In some respects, the techniques described herein relate to semiconductor device assemblies, wherein modules include a front side, a rear side, a first side, and a second side, wherein pin assemblies are coupled to the first side of the module.

[0120] In some respects, the techniques described herein relate to semiconductor device assemblies in which a substrate includes a metal layer located on the rear side of a module, wherein the metal layer is configured to be coupled to a heat dissipation component.

[0121] In some respects, the techniques described herein relate to semiconductor device assemblies in which pins are press-fit pins that extend vertically from the base of a pin assembly and are substantially perpendicular to a metal layer.

[0122] In some respects, the techniques described herein relate to semiconductor device assemblies in which a first side of a module includes at least one recess or protrusion, and a base includes at least one recess or protrusion, wherein at least one recess or protrusion of the module is configured to engage at least one recess or protrusion of the base when the base is coupled to the module.

[0123] In some respects, the techniques described herein relate to semiconductor device assemblies in which pins include non-conductive bodies having a first end and a second end, wherein the first end has a shape complementary to the shape of the pin socket.

[0124] In some respects, the techniques described herein relate to semiconductor device assemblies in which a second end of a non-conductive body is configured as a pin guide for a socket of an electrical system.

[0125] In some respects, the techniques described herein relate to semiconductor device assemblies in which a second end of a non-conductive body has a shape complementary to the shape of a pin guide.

[0126] In some aspects, the technology described herein relates to a pin assembly comprising: a base including a pin socket in a top side of the base and a pin terminal opening in a first side of the base; and a pin configured to be disposed in the pin socket, wherein the pin includes a non-conductive body configured to be inserted into the pin socket; wherein the pin terminal opening intersects the pin socket and is configured to receive a pin terminal of a semiconductor device assembly for coupling the pin to the pin terminal.

[0127] In some respects, the techniques described herein relate to pin assemblies, wherein a first side of the base includes at least one recess or protrusion, the at least one recess or protrusion being configured to engage at least one recess or protrusion of the module when the base is coupled to a module of a semiconductor device assembly.

[0128] In some respects, the techniques described herein relate to semiconductor device assemblies in which a non-conductive body is configured as a pin guide for a socket of an electrical system.

[0129] In some respects, the techniques described herein relate to semiconductor device assemblies in which the ends of a non-conductive body have a shape complementary to the shape of a pin guide.

[0130] In some aspects, the techniques described herein relate to methods for producing semiconductor device assemblies, the methods including: electrically coupling a semiconductor die to a substrate; coupling a lead frame to the substrate; applying a molding compound to the lead frame and the substrate to form a module, the module including pin terminals extending from one side of the module; coupling a base of a pin assembly to the module by inserting the pin terminals into a base; inserting pins into pin sockets in the base; and coupling pins to the ends of the pin terminals located in the base.

[0131] In some respects, the techniques described herein relate to methods in which coupling the base of a pin assembly to a module includes inserting pin terminals into pin terminal openings in the base.

[0132] In some respects, the techniques described herein relate to methods in which coupling a pin to an end portion of a pin terminal includes inserting the terminal end of the pin into an opening in the pin terminal.

[0133] In some respects, the techniques described herein relate to methods that also include applying a molding compound to form a base.

[0134] In some aspects, the techniques described herein relate to methods in which coupling a leadframe to a substrate includes coupling a modular portion of the leadframe to the substrate, wherein the leadframe includes a pin assembly portion, and the method further includes applying a molding compound to the pin assembly portion to form a base of the pin assembly.

[0135] In some respects, the techniques described herein relate to methods that also include applying a molding compound to a pin frame assembly to form a non-conductive body on the pin.

[0136] In some respects, the techniques described herein relate to methods in which inserting a pin into a pin socket of a base includes inserting a non-conductive body into the pin socket.

[0137] It should be understood that in the foregoing description, when an element such as a layer, region, or substrate is mentioned as being on, connected to, electrically connected to, coupled to, or electrically coupled to another element, the element may be directly on, connected to, or coupled to the other element, or one or more intermediate elements may be present. Conversely, when an element is mentioned as being directly on, directly connected to, or directly coupled to another element or layer, no intermediate element or layer is present. Although the terms "directly on," "directly connected to," or "directly coupled to" may not be used throughout the detailed description, elements shown as being directly on, directly connected to, or directly coupled to may be so referred to. The claims of this application may be amended to set forth the exemplary relationships described in the specification or shown in the drawings.

[0138] As used herein, the singular form may include the plural form unless the context clearly indicates otherwise. In addition to the orientations depicted in the figures, spatial relative terms (e.g., above, on, above, below, under, beneath, below, on top, at the bottom, etc.) are intended to cover different orientations of the device in use or operation. In some embodiments, the relative terms above and below may respectively include vertically above and vertically below. In some embodiments, the term adjacent may include laterally adjacent or horizontally adjacent.

[0139] Some specific implementations can be achieved using various semiconductor processing and / or packaging techniques. Some specific implementations can be achieved using various types of semiconductor device processing techniques associated with semiconductor substrates, including but not limited to, silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), etc.

[0140] In some embodiments, one or more semiconductor dies associated with the embodiments described herein may be embedded within a layer (rather than surface mounted). For example, one or more semiconductor dies may be disposed within a recess (or cavity) of a layer (e.g., a substrate, printed circuit board, conductive layer, insulating layer).

[0141] In some implementations, a module (e.g., a package including a semiconductor device) may be included within another module. A module may be referred to as a package. For example, one or more modules may be one or more sub-modules included within another module. In other words, a first module may be included as a sub-module within a second module.

[0142] In some specific implementations, the spacer material can be epoxy resin, silicone adhesive, conductive material, non-conductive material, organic material, semiconductor material, metal alloy, metal foam, phase change material, etc.

[0143] In some exemplary embodiments, the package (e.g., a power module) may be a hybrid device package comprising one or more semiconductor dies integrated onto a unified electronic power substrate (e.g., a ceramic substrate, a DBM or DBC substrate, an AMB substrate, an elastomer substrate, an organic substrate, a phenolic substrate, or a PCB / FR-4 substrate). In some embodiments, multiple semiconductor devices may be fabricated, for example, on the same substrate (such as a SiC substrate) suitable for high-power applications.

[0144] While certain features of the described embodiments have been exemplified as described herein, many modifications, alternatives, variations, and equivalents will now occur to those skilled in the art. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations falling within the scope of the embodiments. It should be understood that these modifications and variations are presented by way of example only and not limitation, and various changes in form and detail are possible. Any parts of the apparatus and / or method described herein can be combined in any way, except for mutually exclusive combinations. The embodiments described herein may include various combinations and / or sub-combinations of the functions, components, and / or features of the different embodiments described.

Claims

1. A semiconductor device assembly, the semiconductor device assembly comprising: Module, the module includes: A semiconductor die, wherein the semiconductor die is electrically coupled to a substrate; Lead frame, the lead frame being coupled to the substrate and the semiconductor die; and A molding compound encapsulating the substrate, the semiconductor die, and the lead frame, wherein the lead frame includes pin terminals extending from the molding compound; and Pin assembly, the pin assembly comprising: Base, the base being coupled to the module; and Pins, wherein the pins are disposed in pin sockets in the base; The pin terminal is inserted into the base, and the terminal end of the pin is coupled to the pin terminal.

2. The semiconductor device assembly according to claim 1, wherein, The base includes a pin terminal opening into which the pin terminal is inserted.

3. The semiconductor device assembly according to claim 1, wherein, The molding compound is a first molding compound, and the base is formed of a second molding compound.

4. The semiconductor device assembly according to claim 3, wherein, The first side of the base contacts the second side of the module, and the first side and the second side form an interface extending between the front and rear sides of the module.

5. The semiconductor device assembly of claim 4, further comprising at least one of an adhesive or a sealant applied at the interface.

6. The semiconductor device assembly according to claim 1, wherein, The molding compound is a first molding compound, the base is formed of a second molding compound, and the second molding compound of the base defines an interface with the first molding compound of the module.

7. The semiconductor device assembly according to claim 1, wherein, When the pin is disposed in the pin socket and coupled to the pin terminal, the pin locks the base to the module.

8. The semiconductor device assembly according to claim 1, wherein, The module includes a front side, a rear side, a first side, and a second side, and the pin assembly is coupled to the first side of the module.

9. The semiconductor device assembly of claim 8, wherein, The substrate includes a metal layer located on the rear side of the module, the metal layer being configured to be coupled to a heat dissipation component.

10. The semiconductor device assembly of claim 9, wherein, The pin is a press-fit pin that extends vertically from the base of the pin assembly and is substantially perpendicular to the metal layer.

11. The semiconductor device assembly of claim 8, wherein, The first side of the module includes at least one recess or protrusion, and the base includes at least one recess or protrusion, wherein the at least one recess or protrusion of the module is configured to engage with the at least one recess or protrusion of the base when the base is coupled to the module.

12. The semiconductor device assembly of claim 1, wherein, The pin includes a non-conductive body having a first end and a second end, the first end having a shape complementary to the shape of the pin socket.

13. The semiconductor device assembly of claim 12, wherein, The second end of the non-conductive body is configured to engage with the pin guide of the electrical system's socket.

14. The semiconductor device assembly of claim 13, wherein, The second end of the non-conductive body has a shape complementary to the shape of the pin guide.

15. A pin assembly, the pin assembly comprising: A base, the base including a pin socket in a top side of the base and a pin terminal opening in a first side of the base; as well as A pin, the pin being configured to be disposed in the pin socket, wherein the pin includes a non-conductive body configured to be inserted into the pin socket; The pin terminal opening intersects with the pin socket and is configured to receive the pin terminal of a semiconductor device assembly for coupling the pin to the pin terminal.

16. The pin assembly of claim 15, wherein, The first side of the base includes at least one recess or protrusion, the at least one recess or protrusion being configured to engage with at least one recess or protrusion of the module when the base is coupled to the module of the semiconductor device assembly.

17. The pin assembly of claim 16, wherein, The non-conductive body is configured to engage with the pin guides of the electrical system's socket.

18. The pin assembly of claim 17, wherein, The end of the non-conductive body has a shape complementary to the shape of the pin guide.

19. A method for producing a semiconductor device assembly, the method comprising: Electrically couple the semiconductor die to the substrate; The lead frame is coupled to the substrate; A molding compound is applied to the lead frame and the substrate to form a module, the module including pin terminals extending from one side of the module; The base is coupled to the module by inserting the pin terminals into the base of the pin assembly; Insert the pins into the pin sockets of the base; as well as The pin is coupled to the end portion of the pin terminal located in the base.

20. The method according to claim 19, wherein, Coupling the base of the pin assembly to the module includes inserting the pin terminals into pin terminal openings in the base.

21. The method according to claim 20, wherein, Coupling the pin to the end portion of the pin terminal includes inserting the terminal end of the pin into an opening in the pin terminal.

22. The method of claim 19, further comprising applying a molding compound to form the base.

23. The method according to claim 22, wherein, Coupling the lead frame to the substrate includes: coupling a module portion of the lead frame to the substrate, wherein the lead frame includes a pin assembly portion, the method further including: applying a molding compound to the pin assembly portion to form the base of the pin assembly.

24. The method according to claim 19, further comprising: A molding compound is applied to the pin frame assembly to form a non-conductive body on the pin.

25. The method according to claim 24, wherein, Inserting the pin into the pin socket of the base includes: inserting the non-conductive body into the pin socket.

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