Gaskets with flow openings for semiconductor manufacturing, and associated chamber kits, processing chambers, and methods

Abstract

This disclosure relates to a liner with flow openings for use in semiconductor manufacturing, and related chamber assemblies, processing chambers, and methods thereof. In one or more embodiments, the liner suitable for semiconductor manufacturing includes an inner surface and an outer surface opposite to the inner surface. The liner includes an inlet opening extending into the inner surface and an outlet opening extending into the inner surface. The liner includes a curved flow opening extending into the outer surface and at least partially surrounding the liner. The curved flow opening extends along an azimuth angle greater than 90 degrees.

Description

Technical Field

[0001] This disclosure relates to a liner with flow openings for use in semiconductor manufacturing, and related chamber kits, processing chambers, and methods thereof. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor material or a conductive material, on the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials onto the surface of a substrate within a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition operations) can involve corrosion, deposition, and / or contamination of the chamber components. For example, gas can leak between the surfaces of the chamber components, and gas can condense on the surfaces of the chamber components. Such leaks can shorten component life, increase gas consumption, and / or contaminate the treated substrate.

[0004] Therefore, there is a need for improved equipment and methods for semiconductor processing. Summary of the Invention

[0005] This disclosure relates to a liner with flow openings for use in semiconductor manufacturing, and related chamber kits, processing chambers, and methods thereof.

[0006] In one or more embodiments, the pad suitable for semiconductor manufacturing includes an inner surface and an outer surface opposite the inner surface. An inlet opening extends into the inner surface, and an outlet opening extends into the inner surface. A tortuous flow opening extends into the outer surface and at least partially surrounds the pad. The tortuous flow opening extends along an azimuth angle greater than 90 degrees.

[0007] In one or more embodiments, a chamber assembly suitable for semiconductor manufacturing includes a first liner. The first liner includes a first inner surface and a first outer surface opposite the first inner surface. The first liner includes a first flow opening extending into the first outer surface and at least partially surrounding the first liner. The first flow opening extends along a first azimuth angle greater than 90 degrees. The chamber assembly also includes a second liner. The second liner includes a second inner surface and a second outer surface opposite the first inner surface. The second liner includes a second flow opening sized and shaped to at least partially align with the first flow opening. The second flow opening extends into the second outer surface and at least partially surrounding the second liner. The second flow opening extends along a second azimuth angle greater than 90 degrees.

[0008] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes: one or more sidewalls at least partially defining a processing volume; a substrate support disposed within the processing volume; and one or more heat sources operable to heat the processing volume. The processing chamber also includes a first liner disposed within the processing volume. The first liner includes a first inner surface, a first outer surface opposite the first inner surface, and a first flow opening extending into the first outer surface and at least partially surrounding the first liner. The first flow opening extends along a first azimuth angle greater than 90 degrees. The processing chamber also includes a second liner at least partially supporting the first liner. The second liner includes a second inner surface, a second outer surface opposite the first inner surface, and a second flow opening at least partially aligned with the first flow opening. The second flow opening extends into the second outer surface and at least partially surrounding the second liner. The second flow opening extends along a second azimuth angle greater than 90 degrees. Attached Figure Description

[0009] To provide a detailed understanding of the features and methods described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be made with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate exemplary embodiments of this disclosure and should not be considered as limiting the scope of this disclosure; other equally effective embodiments are permissible.

[0010] Figure 1 It is a side cross-sectional schematic diagram of a processing chamber according to one or more embodiments.

[0011] Figure 2 It is based on one or more implementation methods. Figure 1 The diagram shows a partial top cross-sectional view of the processing chamber.

[0012] Figure 3 It is based on one or more implementation methods. Figure 1 The diagram shows a partial front view of the upper and lower flow modules.

[0013] Figure 4 This is an isometric schematic diagram of a chamber kit suitable for semiconductor manufacturing.

[0014] Figure 5 This is an isometric schematic diagram of a chamber kit suitable for semiconductor manufacturing.

[0015] Figure 6A A perspective cross-sectional view showing the accumulation of material on a chamber body using the configuration described herein, according to one or more embodiments.

[0016] Figure 6B It is a perspective cross-sectional view of material accumulation on the main body of the chamber using other configurations.

[0017] Figure 7A It is based on one or more implementation methods. Figure 1 and Figure 4 The diagram shows a top-view isometric view of the upper padding.

[0018] Figure 7B It is based on one or more implementation methods. Figure 7A The diagram shows a bottom-view isometric view of the upper chamber liner.

[0019] Figure 7C It is based on one or more implementation methods. Figure 7A The diagram shows a bottom view of the upper chamber liner.

[0020] Figure 8A It is based on one or more implementation methods. Figure 1 and Figure 4 An isometric schematic diagram of the intermediate chamber liner shown.

[0021] Figure 8B It is based on one or more implementation methods. Figure 8A The diagram shows a top view of the intermediate pad.

[0022] Figure 8C It is based on one or more implementation methods. Figure 8A The diagram shows a bottom view of the intermediate pad.

[0023] Figure 9A It is based on one or more implementation methods. Figure 1 and Figure 4 The diagram shows an isometric view of the lower padding.

[0024] Figure 9B It is based on one or more implementation methods. Figure 9A The diagram shows a top view of the lower padding.

[0025] Figure 10 It is a schematic block diagram of a substrate processing method for semiconductor manufacturing according to one or more embodiments.

[0026] To facilitate understanding, the same reference numerals have been used where possible to designate common elements in the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further explanation. Detailed Implementation

[0027] This disclosure relates to a liner with flow openings for use in semiconductor manufacturing, and related chamber kits, processing chambers, and methods thereof.

[0028] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 creates a crossflow of a precursor across the top surface 150 of the substrate 102. Figure 1 The image shows the processing chamber 100 under processing conditions.

[0029] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, an upper flow module 113, and a lower flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the upper flow module 113, the lower flow module 112, and the lower body 148 form the chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (such as an upper dome), a lower window 110 (such as a lower dome), and one or more heat sources 141, 143. These one or more heat sources 141, 143 include multiple upper heat sources 141 and multiple lower heat sources 143. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. In one or more embodiments, the lamp includes a halogen lamp. In one or more embodiments, the lamp is operable to emit infrared and / or ultraviolet light. This disclosure contemplates that other heat sources can be used (as a supplement or alternative to the lamp) for the various heat sources described herein. For example, resistive heaters, light-emitting diodes (LEDs), and / or lasers can be used for the various heat sources described herein.

[0030] A substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a base. Other substrate supports are contemplated in this disclosure (including, for example, a substrate carrier and / or one or more ring segments supporting one or more external regions of the substrate 102). The plurality of upper heat sources 141 are disposed between the upper window and the cover 154. The plurality of upper heat sources 141 form part of the upper heat source module 155.

[0031] The plurality of lower heat sources 143 are disposed between the lower window 110 and the base plate 152. The plurality of lower heat sources 143 form part of the lower heat source module 145. The upper window 108 is an upper dome and / or is formed of an energy transfer material (such as quartz). The lower window 110 is a lower dome and / or is formed of an energy transfer material (such as quartz).

[0032] Processing volume 136 and purification volume 138 are formed between upper window 108 and lower window 110. Processing volume 136 and purification volume 138 are portions of the internal volume defined at least partially by upper window 108, lower window 110, and one or more gaskets 163, 115, 117. In one or more embodiments, the chamber includes three gaskets 163, 115, 117. In one or more embodiments, the chamber includes an upper gasket 163, a middle gasket 115, and a lower gasket 117. The one or more gaskets 163, 115, 117 are disposed inside the chamber body.

[0033] The internal volume has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0034] The substrate support 106 may include lifting rod holes 107 disposed therein. Each lifting rod hole 107 is sized to receive a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. When the substrate support 106 descends from the processing position to the transport position, the lifting rod 132 may rest on a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0035] The upper flow module 113 and the lower flow module 112 include one or more gas inlets 114 (e.g., multiple gas inlets), one or more purified gas inlets 164 (e.g., multiple purified gas inlets), and one or more gas outlets 116. The one or more gas inlets 114 and the one or more purified gas inlets 164 are disposed on the side of the flow module 112 opposite to the one or more gas outlets 116. The one or more gas outlets 116 are formed in one or more flow housings 158 (e.g., gas boxes). In one or more embodiments, the upper flow module 113 and / or the lower flow module 112 include one or more metal bodies. These metal bodies may include, for example, stainless steel and / or aluminum. Other materials are contemplated. In one or more embodiments, the upper flow module 113 and the lower flow module 112 respectively abut against the outside of the gaskets 163, 115, 117. A preheating ring 123 is disposed below one or more gas inlets 114 and one or more gas outlets 116. The preheating ring 123 comprises a complete ring or one or more ring segments. The preheating ring 123 is disposed on top of the support pad 111, above one or more purge gas inlets 164. One or more pads 163, 115, 117 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from the reactive gases used during deposition and / or cleaning operations. The gas inlets 114 and purge gas inlets 164 are each positioned such that one or more process gases P1 and one or more purge gases P2 flow parallel to the top surface 150 of the substrate 102 disposed within the processing volume 136. The gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to one or more exhaust pumps 157. Exhaust pumps 157 may assist in the controlled deposition of layers on substrate 102. One or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purifying gases P2 supplied using one or more purifying gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0036] In one or more embodiments, one or more gases P3 flow through the upper liner purification inlet 210 to the first curved flow opening 159 of the upper liner 163 and the second curved flow opening 259 of the intermediate liner 115. In addition to the flow of one or more purified gases P2, one or more gases P3 also flow. In one or more embodiments, the one or more gases P3 comprise one or more purified gases. The one or more gases P3 may have the same or different composition as the one or more purified gases P2. The first curved flow opening 159 and the second curved flow opening 259 are located between the upper flow module 113 and the upper liner 163 and the intermediate liner 115. The first curved flow opening 159 and the second curved flow opening 259 together define a flow channel between the upper flow module 113 and the lower flow module 112 on one side and the upper liner 163 and the intermediate liner 115 on the other side. Then, one or more gases P3 flow around the outer sides of the upper liner 163 and the intermediate liner 115 along a tortuous path in the flow channel toward the gas discharge outlet 116. One or more gases P3 flow from the flow channel through one or more through holes 161 located in the intermediate liner 115. Then, one or more gases P3 flow through the through holes 161 to the gas discharge outlet 116, wherein one or more gases P3 can be discharged through one or more flow housings 158.

[0037] The upper flow module 113 and the lower flow module 112 (which may be at least a portion of the sidewall of the processing chamber 100) include one or more gas inlets 114 in fluid communication with the processing volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and the intermediate liner 115.

[0038] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, and into a processing volume 136 to flow over the substrate 102.

[0039] This disclosure envisions that, during deposition operations, one or more purge gases P2 can be supplied to the purge volume 138 (through one or more purge gas inlets 164) and discharged from the purge volume 138. One or more purge gases P2 flow simultaneously with one or more process gases P1 and / or one or more gases P3. One or more process gases P1 are discharged through the gap between the upper liner 163 and the intermediate liner 115. One or more process gases P1, one or more purge gases P2, and one or more gases P3 are discharged through one or more gas discharge outlets 116.

[0040] In one or more embodiments, one or more gases P3 flow in the second flow channel 261. One or more gases P3 flow from the second flow channel 261 and around the outside of one or more flow housings 158, passing through one or more gaps 187 between the one or more flow housings 158 and the lower flow module 112. One or more gases P3 flow from the one or more gaps 187 to an external discharge volume 188 fluidly connected to the discharge pump 157. This disclosure envisions that one or more gases P3 can be discharged individually through one or more second gas discharge outlets separate from one or more gas discharge outlets 116.

[0041] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the intermediate liner 115), and into the treatment volume 136.

[0042] The processing system includes one or more sensor devices 195, 196, 197, 198 (e.g., temperature sensors) configured to measure parameters (e.g., temperature) within the processing chamber 100. In one or more embodiments, the one or more temperature sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more external sensor devices 195, 197, 198. A controller 190 (described below) can control the one or more sensor devices 195, 196, 197, 198 and can perform methods for analyzing the uniformity of substrate processing using at least one of the one or more sensor devices 195, 196, 197, 198. In one or more embodiments, each of the one or more sensor devices 195, 196, 197, 198 includes a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, each of the sensor devices 195, 196, 197, and 198 includes a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, each sensor device 195, 196, 197, and 198 is a pyrometer and / or an optical sensor, such as an optical pyrometer. This disclosure contemplates the use of sensor devices other than pyrometers, and / or the ability of one or more of the sensor devices 195, 196, 197, and 198 to measure properties other than temperature (such as metrological properties).

[0043] In one or more embodiments, one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed above the substrate 102 and adjacent to the cover 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent to the bottom plate 152. This disclosure envisions that at least one of the lower sensor devices 195 can be vertically aligned below at least one of the upper sensor devices 196, 197 (such as external sensor device 197).

[0044] Each sensor device 195, 196, 197, 198 may be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the system including the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, 198. In one or more embodiments, in addition to sensor devices 195, 196, 197, 198, the processing chamber 100 may also include one or more additional sensor devices. In one or more embodiments, the processing chamber 100 may include sensor devices located at different positions from the illustrated sensor devices 195, 196, 197, 198 and / or having a different orientation than those sensor devices.

[0045] As shown, controller 190 communicates with processing chamber 100 and is used to control the operation of processes and methods, such as those described herein. Controller 190 is configured to receive data or input as sensor readings from sensors (such as one or more sensor devices 195, 196, 197, 198). Sensor devices may include, for example, sensor devices monitoring the growth of layers on substrate 102; and / or sensor devices monitoring the temperature of substrate 102, substrate support 106, and / or pads 163, 115, 117. As described, one or more sensor devices may include, for example, pyrometers.

[0046] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), instruction-containing memory 191, and support circuitry 192 for CPU 193. Controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, and controller 190 functions as a central controller.

[0047] The controller 190 has any form of general-purpose computer processor for industrial settings, used to control various substrate processing chambers and devices, and subprocessors thereon or therein. The memory 191 or non-transitory computer-readable medium is one or more readily available memory types, such as random access memory (RAM), dynamic random access memory (DRAM), static random access memory (SRAM), synchronous dynamic random access memory (SDRAM) (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.), read-only memory (ROM), floppy disk, hard disk, USB flash drive, or any other form of local or remote digital storage device. Support circuitry 192 of the controller 190 is coupled to the CPU 193 to support the CPU 193. Support circuitry 192 includes cache, power supply, clock circuitry, input / output circuitry systems and subsystems, and the like. Operating parameters (e.g., power applied to heat sources 141, 143, cleaning formula, and / or treatment formula) and operations are stored as software routines in memory 191. These software routines are executed or invoked to convert controller 190 into a dedicated controller to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. Instructions stored in memory, when executed, cause one or more of the operations described herein to be performed with respect to processing chamber 100. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0048] The various operations described herein can be performed automatically using the controller 190, or can be performed manually using certain operations performed by the user.

[0049] The controller 190 is configured to control the deposition, cleaning, rotational position, heating and gas flow through the processing chamber 100 by providing controls to the sensor devices 195, 196, 197, 198, upper heat source 141, lower heat source 143, process gas source 151, purified gas source 162, motion component 121 and / or exhaust pump 157.

[0050] Figure 2 It is based on one or more implementation methods. Figure 1 The diagram shows a partial top cross-sectional view of the processing chamber 100. For visual clarity, Figure 2 The upper flow module 113 is shown schematically without shading.

[0051] In one or more embodiments, the purified gas P2 flows through the upper liner purification inlet 210 and into the first curved flow opening 159 and the second curved flow opening 259. The first curved flow opening 159 and the second curved flow opening 259 are located between the upper liner 163 and the intermediate liner 115. Figure 1 The upper flow module 113 is located on the outside of the upper liner 163. A first curved flow opening 159 and a second curved flow opening 259 extend around the upper liner 163 and the middle liner 115, respectively, at corresponding azimuth angles A1 and A2 greater than 90 degrees. The first curved flow opening 159 and the second curved flow opening 259 define the volume between the upper flow module 113 and the outside of the upper liner 163 and the middle liner 115. One or more gases P3 flow along the first curved flow opening 159 and the second curved flow opening 259 from the upper liner purification inlet 210 toward one or more through holes 161.

[0052] Figure 3 It is based on one or more implementation methods. Figure 1 The diagram shows a partial front view of the upper flow module 113 and the lower flow module 112.

[0053] In one or more embodiments, the upper flow module 113 includes a front face 310. The lower flow module 112 includes a front face 320. The upper flow module 113 includes a plurality of upper liner purification inlets 210, which are disposed on opposite sides of each other in the upper flow module 113 relative to the front face 310. The upper liner purification inlets 210 are connected to a first curved flow opening 159. Figure 2 The first curved flow opening extends along a first azimuth angle A1 of at least 90 degrees, along the upper liner 163 ( Figure 2 The outer surface of the lower flow module 112 extends between multiple upper liner purification inlets 210. The lower flow module 112 includes multiple lower purification gas inlets 364, which are positioned on opposite sides of each other relative to the front 320 within the lower flow module 112. The lower purification gas inlets 364 supply one or more gases P3 to the second flow channel 261.

[0054] Figure 4 This is an isometric schematic diagram of a chamber assembly 400 suitable for semiconductor manufacturing according to one or more embodiments. The chamber assembly 400 includes... Figures 1 to 4 One or more aspects, features, components, operation and / or properties of the processing chamber 100 shown.

[0055] The chamber kit 400 includes, for example, Figure 1The diagram shows an upper liner 163, a middle liner 115, and a lower liner 117. Liners 163, 115, and 117 are made of opaque materials, such as silicon carbide (SiC), opaque quartz (e.g., black quartz, white quartz, and / or gray quartz), and / or graphite coated with silicon carbide and / or opaque quartz. The upper liner 163 includes a side inlet 414 through which one or more process gases can flow relative to the side inlet 414. Figure 1 One or more process gases P1, as shown, flow through the side inlet at an angle into the processing volume 136. One or more gases P3 flow through the upper liner purification inlet 210. Figure 3 The gas flows into a first curved flow opening 159 and a second curved flow opening 259. The first curved flow opening 159 extends around the outside of the upper liner 163 at a first azimuth angle A1 greater than 90 degrees. The second curved flow opening 259 extends along the outside of the intermediate liner 115 at a second azimuth angle A2 greater than 90 degrees. Then, one or more gases P3 flow through one or more through holes 161 extending into the intermediate liner 115 (a pair of through holes 161 are shown). One or more through holes 161 extend between the second curved flow opening 259 and one or more gas discharge outlets 116.

[0056] In one or more embodiments, one or more gases P3 flow through the purified gas inlet ( Figure 3 The flow proceeds into the second flow channel 261. The second flow channel 261 is defined by a third curved flow opening 359 formed in the intermediate liner 115 and a fourth curved flow opening 459 formed in the lower liner 117. The third curved flow opening 359 is located between the intermediate liner 115 and the lower flow module 112, and the fourth curved flow opening 459 is located between the lower liner 117 and the lower flow module 112, thereby defining the second flow channel 261. The third curved flow opening 359 extends around the outside of the intermediate liner 115 along a third azimuth angle A3 greater than 90 degrees. The fourth curved flow opening 459 extends around the outside of the lower liner 117 along a fourth azimuth angle A4 greater than 90 degrees. The third curved flow opening 359 is a groove in the outside of the intermediate liner 115, and the fourth curved flow opening 459 is a groove in the outside of the lower liner 117. One or more gases P3 flow through one or more gaps 187 around the flow housing 158 along the third curved flow opening 359 and the fourth curved flow opening 459.

[0057] In one or more embodiments, one or more (such as one or all) of the azimuth angles A1 to A4 of the first, second, third, and tortuous flow openings are the same. In one or more embodiments, the first azimuth angle A1 is equal to the second azimuth angle A1. In one or more embodiments, one or more (such as one or all) of the azimuth angles A1 to A4 of the first, second, third, and fourth flow openings are different from each other. In one or more embodiments, the third angle A3 and / or the fourth angle A4 is smaller than the first angle A1 and / or the second angle A2. In one or more embodiments, one or more (such as one or all) of the azimuth angles A1 to A4 of the first, second, third, and fourth flow openings are greater than 180 degrees, such as greater than 270 degrees, for example, about 360 degrees. In one or more embodiments, the first azimuth angle A1 and / or the second azimuth angle A2 are greater than 270 degrees, for example, about 360 degrees.

[0058] Figure 5 This is an isometric schematic diagram of a chamber assembly 500 suitable for semiconductor manufacturing, according to one or more embodiments. The chamber assembly 500 includes... Figure 4 One or more aspects, features, components, operation and / or properties of the chamber kit 400 shown.

[0059] In one or more embodiments, one or more gases P3 flow through the upper liner purification inlet 210 ( Figure 3 The gas P3 flows into the first curved flow opening 559. The first curved flow opening 559 extends around the outside of the upper gasket 563 along a first azimuth angle AA1 greater than 90 degrees. The second curved flow opening 561 extends around the outside of the intermediate gasket 515 along a second azimuth angle AA2 greater than 90 degrees. One or more gases P3 flow along the first curved flow opening 559 and the second curved flow opening 561 and into one or more flow housings 158. Figure 1 In one or more embodiments, the first azimuth angle AA1 and the second azimuth angle AA2 are each less than 330 degrees, such as less than 300 degrees. In one or more embodiments, the first azimuth angle AA1 and the second azimuth angle AA2 are each greater than 180 degrees.

[0060] In one or more embodiments, one or more gases P3 flow through the lower purified gas inlet 364 ( Figure 3 And into the third curved flow opening 562 and the fourth curved flow opening 564. The third curved flow opening 562 is a groove in the outer side of the intermediate liner 515, and the fourth curved flow opening 564 is a groove in the outer side of the lower liner 517. One or more gases P3 flow around one or more flow housings 158 along the third curved flow opening 562 and the fourth curved flow opening 564, and through the gap 187 ( Figure 1The third curved flow opening 562 extends around the outside of the intermediate liner 515 along a third azimuth angle AA3 of less than 180 degrees (such as less than 90 degrees). The fourth curved flow opening 564 extends around the outside of the lower liner 517 along a fourth azimuth angle AA4 of less than 180 degrees (such as less than 90 degrees).

[0061] This disclosure envisions that the intermediate pad 515 and the lower pad 517 may be located on opposite sides of the intermediate pad 515 and the lower pad 517, respectively (e.g., Figure 5 The view shown on the back side includes an additional third curved flow opening 562 and an additional fourth curved flow opening 564.

[0062] Figure 6A This is a perspective cross-sectional view of material accumulation on a chamber body using the configuration described herein, according to one or more embodiments. The material accumulation is, for example, on the inner surfaces of the lower flow module 112 and the upper flow module 113. In one or more embodiments, the material accumulation includes chlorine.

[0063] The cross-sectional view includes a first cross-section 601 having a first material concentration, a second cross-section 602 having a second material concentration higher than the first material concentration, and a third cross-section 603 having a third material concentration higher than the third material concentration.

[0064] Figure 6B It is a perspective cross-sectional view of material accumulation on the main body of the chamber using other configurations.

[0065] For example, through comparison Figure 6A and Figure 6B As demonstrated, the objectives described in this paper facilitate a reduction in accumulation on the chamber body, at least compared to Figure 6B Section 603 of the middle section Figure 6A As shown in the smaller third section 603, reduced accumulation is facilitated, for example, in the injection and discharge areas of the chamber body and / or in their vicinity.

[0066] Figure 7A It is based on one or more implementation methods. Figure 1 and Figure 4 The diagram shows a top-view isometric view of the upper pad 163.

[0067] The upper liner 163 includes an inner surface 701 and an outer surface 702 opposite to the inner surface 701. The upper liner 163 includes an inlet opening 703 extending into the inner surface 701 and an outlet opening 704 extending into the inner surface 701. A first curved flow opening 159 extends into the outer surface 702. The upper liner 163 includes a first side surface 715 (e.g., a top surface) and a second side surface 712 (e.g., a bottom surface) opposite to the first side surface 715. The first side surface 715 and the second side surface 712 extend between the inner surface 701 and the outer surface 702. In one or more embodiments, the first curved flow opening 159 is a groove extending into the second side surface 712 of the upper liner 163 to define a shoulder 711 relative to the second side surface 712. The upper liner 163 includes a flow protrusion 710 located on the outer surface of the upper liner 163. The flow protrusion 710 includes a protrusion extending into a first curved flow opening 159 that extends around the outer edge 702 of the upper gasket along a first azimuth angle A1. In one or more embodiments, crossflow gas can be injected through the flow protrusion 710 and is substantially perpendicular to the process gas P1. Figure 1 ) spanning a processing volume of 136 ( Figure 4 The flow protrusion 710 is sized and shaped to extend into the first curved flow opening 159, allowing one or more gases P3 flowing in the first curved flow opening 159 to flow around the flow protrusion 710 (e.g., above and / or below the flow protrusion). One or more gases P3 flow from the upper liner purification inlet 210 (…). Figure 2 ) through the first curved flow opening 159, and around the flow protrusion 710 and toward 161 ( Figure 4 )flow.

[0068] Figure 7B It is based on one or more implementation methods. Figure 7A The diagram shows a bottom-view isometric view of the upper pad 163.

[0069] Figure 7C It is based on one or more implementation methods. Figure 7A The diagram shows a bottom view of the upper pad 163.

[0070] Figure 8A It is based on one or more implementation methods. Figure 1 and Figure 4 An isometric schematic diagram of the intermediate pad 115 shown.

[0071] Intermediate liner 115 includes an inner surface 801, an outer surface 802, an inlet opening 803, and one or more outlet openings 804 (shown as multiple). A second curved flow opening 259 extends into the outer surface 802. In one or more embodiments, the second curved flow opening 259 is a recess extending into a first side surface 812 (e.g., a top surface) of the intermediate liner 115 to define a shoulder 814 relative to the first side surface 812. The intermediate liner 115 includes a second side surface 815 (e.g., a bottom surface) opposite the first side surface 812. The first side surface 812 and the second side surface 815 extend between the inner surface 801 and the outer surface 802. The intermediate liner 115 includes a protrusion 810 located on the outer surface 802 of the intermediate liner 115. The protrusion 810 extends into the second curved flow opening 259, which extends around the outer surface 802 of the intermediate liner 115 along a second azimuth angle A2. In one or more embodiments, the crossflow gas can be injected through the protrusion 810 and is generally perpendicular to the process gas P1. Figure 1 ) spanning a processing volume of 136 ( Figure 4 The protrusion 810 is sized and shaped to extend into the second curved flow opening 259, allowing one or more gases P3 flowing in the second curved flow opening 259 to flow around the protrusion 810 (e.g., above and / or below the protrusion). One or more gases P3 flow from the upper liner purification inlet 210 (… Figure 2 The gas flows within the second curved flow opening 159 and around the protrusion 810, through the through hole 161, and to the discharge opening 804 at the opposite end of the intermediate liner 115. The intermediate liner 115 includes one or more lower flow openings 811 through which one or more purge gases P2 can flow through the discharge opening 804 to one or more gas discharge outlets 116. Figure 1 The intermediate gasket 115 includes a third curved flow opening 359 that extends around the outer surface 802 along a third azimuth angle A3. In one or more embodiments, one or more through holes 161 interface with one or more discharge openings 804 formed in the intermediate gasket 115. The one or more discharge openings 804 are Figure 1 At least a portion of one or more gas discharge outlets 116 shown. One or more through holes 161 extend into a recessed outer surface 813 at least partially defined by a second curved flow opening 259 of an intermediate liner 115.

[0072] Figure 8B It is based on one or more implementation methods. Figure 8A The diagram shows a top view of the intermediate pad 115.

[0073] Figure 8C It is based on one or more implementation methods. Figure 8AThe diagram shows a bottom view of the intermediate pad 115.

[0074] Figure 9A It is based on one or more implementation methods. Figure 1 and Figure 4 An isometric schematic diagram of the lower pad 117 shown.

[0075] The lower liner 117 includes an inner surface 901, an outer surface 902, an inlet opening 903, one or more outlet openings 904 (shown as multiple), one or more ridges 905 (shown as multiple), and a fourth curved flow opening 459 that extends around the outer surface 902 along a fourth azimuth angle A4.

[0076] Figure 9B It is based on one or more implementation methods. Figure 9A A top view of the lower pad 117 shown.

[0077] This disclosure envisions that the upper pad 163 may be referred to as the first pad, the middle pad 115 may be referred to as the second pad, and / or the lower pad 117 may be referred to as the third pad.

[0078] Figure 10 This is a schematic block diagram of a substrate processing method 1000 for semiconductor manufacturing according to one or more embodiments.

[0079] Operation 1001 includes positioning the substrate on a substrate support within the processing volume of the processing chamber. In one or more embodiments, positioning includes moving the substrate support and / or a plurality of lifting rods relative to each other to bring the substrate onto the substrate support.

[0080] Operation 1002 of method 1000 includes heating the substrate to a target temperature.

[0081] Operation 1003 includes causing one or more process gases to flow over the substrate.

[0082] Operation 1004 includes flowing one or more purge gases. In one or more embodiments, at least a portion of the purge gases flows around a chamber liner within a tortuous flow opening to a gas outlet. In one or more embodiments, a pressure is maintained within the tortuous flow opening. In one or more embodiments, operation 1004 and operation 1103 are performed at least partially simultaneously.

[0083] The benefits of this disclosure include reduced or eliminated chamber component corrosion, chamber component deposition, and / or chamber substrate contamination; reduced process gas leakage; and reduced or eliminated condensation of process gases on chamber components; reduced gas consumption and gas waste; increased chamber component lifespan; improved growth rate; and more uniform film growth and / or dopant concentration. The processing chamber components may include, for example, flow modules (e.g., stainless steel or aluminum flow modules) and / or gaskets (e.g., transparent or opaque gaskets).

[0084] It is conceivable that one or more aspects disclosed herein can be combined. As an example, the following components, features, parts, operations, and / or properties of the following can be combined: processing chamber 100; upper liner 163; intermediate liner 115; lower liner 117; upper flow module 113; lower flow module 112; upper liner purification inlet 210; lower purification gas inlet 364; gas inlet 114; purification gas inlet 164; gas exhaust outlet 116; first curved flow opening 159; second curved flow opening 259; through hole 161; flow housing 158; gap 187; external discharge volume 188; third curved flow opening 359; fourth curved flow opening 459; upper liner 563; intermediate liner 515; lower liner 517; flow protrusion 710; protrusion 810; and / or method 1000. Furthermore, it is conceivable that one or more aspects disclosed herein may include some or all of the benefits described above.

[0085] Although the foregoing describes embodiments of this disclosure, other and additional embodiments of this disclosure may be devised without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the foregoing claims.

Claims

1. A substrate processing chamber, the substrate processing chamber comprising: One or more sidewalls, the one or more sidewalls at least partially defining the processing volume, the one or more sidewalls comprising a metal body; A substrate support member, wherein the substrate support member is disposed in the processing volume; One or more heat sources, said one or more heat sources being operable to heat the processing volume; A first liner, disposed within the processing volume, the first liner being disposed inside and adjacent to the metal body, the first liner comprising: First inner surface; The first outer surface is opposite to the first inner surface; as well as A first flow opening extends into the first outer surface and at least partially surrounds the first liner, the first flow opening extending along a first azimuth angle greater than 90 degrees, the first flow opening defining a flow channel between the first liner and the metal body.

2. The processing chamber of claim 1, wherein the processing chamber further comprises: A second pad, which at least partially supports the first pad, comprises: Second inner surface; The second outer surface is opposite to the first inner surface; A second flow opening is at least partially aligned with the first flow opening, the second flow opening extends into the second outer surface and at least partially around the second gasket, and the second flow opening extends along a second azimuth angle greater than 90 degrees. as well as A third flow opening extends into the second outer surface and at least partially surrounds the second gasket, the third flow opening extending along a third azimuth angle greater than 90 degrees.

3. The processing chamber as described in claim 2, wherein the third azimuth angle is greater than 180 degrees.

4. The processing chamber of claim 2, wherein the processing chamber further comprises a third liner, the third liner at least partially supporting the second liner, the third liner comprising: Third inner surface; The third outer surface is opposite to the first inner surface; as well as A fourth flow opening is at least partially aligned with the third flow opening, the fourth flow opening extends into the third outer surface and at least partially around the third gasket, and the fourth flow opening extends along a fourth azimuth angle greater than 90 degrees.

5. The processing chamber of claim 2, wherein the first flow opening is a groove extending into the first outer surface, and the processing chamber further comprises: A ring, wherein the ring is disposed between the first pad and the second pad.

6. The processing chamber of claim 2, wherein the processing chamber further comprises: Gas inlet; and Gas exhaust port.

7. The processing chamber of claim 6, wherein the second liner further comprises: One or more through holes extending between the second inner surface and the second outer surface.

8. The processing chamber of claim 7, wherein the one or more through holes interface with one or more discharge openings formed in the second liner.

9. A liner for a substrate processing chamber, the liner comprising: inner surface; The outside is opposite to the inside. An inlet opening that extends into the inner surface; An outlet opening that extends into the inner surface; as well as A curved flow opening extends into the outside and at least partially around the liner, the curved flow opening extending along an azimuth angle greater than 90 degrees.

10. The liner of claim 9, wherein the liner comprises an opaque material.

11. The pad as claimed in claim 9, wherein the azimuth angle is greater than 180 degrees.

12. The pad of claim 9, wherein the curved flow opening is a groove that at least partially defines a shoulder along the outer side.

13. The liner of claim 9, wherein the liner further comprises: A first side surface, the first side surface extending between the inner surface and the outer surface; and A second side extends between the inner surface and the outer surface, and the second side is opposite to the first side. The curved flow opening, the inlet opening, and the outlet opening extend into the second side.

14. A chamber kit for a substrate processing chamber, the chamber kit comprising: A first liner, the first liner comprising: First inner surface; A first outer surface, which is opposite to the first inner surface; and A first flow opening extends into the first outer surface and at least partially surrounds the first liner, the first flow opening extending along a first azimuth angle greater than 90 degrees. as well as The second liner, the second liner comprising: Second inner surface; The second outer surface is opposite to the first inner surface; as well as A second flow opening, which is of a certain size and shape to be at least partially aligned with the first flow opening, extends into the second outer surface and at least partially around the second gasket, and extends along a second azimuth angle greater than 90 degrees.

15. The chamber assembly of claim 14, wherein the second flow opening is a groove.

16. The chamber kit of claim 14, wherein the second liner further comprises: A third flow opening extends into the second outer surface and at least partially surrounds the second gasket, the third flow opening extending along a third azimuth angle greater than 90 degrees.

17. The chamber kit of claim 16, wherein the second liner further comprises: A first side surface, extending between the second inner surface and the second outer surface; and A second side surface extends between the second inner surface and the second outer surface, and the second side surface is opposite to the first side surface. The second flow opening extends into the first side and the third flow opening extends into the second side.

18. The chamber kit of claim 14, wherein the second liner further comprises: One or more through holes extending between the second inner surface and the second outer surface.

19. The chamber assembly of claim 18, wherein the one or more through holes extend into a recessed outer surface at least partially defined by the second flow opening of the second liner.

20. The chamber assembly of claim 14, wherein the first azimuth angle and the second azimuth angle are each greater than 180 degrees.

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