Circuit breaker circuitry with microelectromechanical system switch

Abstract

The disclosed technology generally relates to microelectromechanical systems (MEMS) switches, and more specifically to MEMS switches configured for high-voltage and high-current applications; and circuits and systems including such MEMS switches. In one aspect, a circuit breaker circuit system includes input terminals and output terminals, and a MEMS switch electrically connected between the input and output terminals. The MEMS switch includes a conductive beam pivoted over a substrate via conductive posts to tilt in opposite directions; and a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts. The first contact electrode is electrically short-circuited to the conductive posts. The MEMS switch further includes a first control electrode and a second control electrode formed on the substrate at opposite sides of the conductive posts. Each of the first and second control electrodes is laterally disposed between the conductive posts and a corresponding one of the first and second contact electrodes. The input terminals, the first contact electrodes, and the conductive posts are commonly electrically connected. After the MEMS switch is activated, the conductive beam tilts in a first direction such that: the first side of the conductive beam is electromechanically coupled to the first contact electrode, and the second side of the conductive beam is mechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

Description

[0001] By incorporating any priority claim

[0002] Any and all applications that identify foreign or domestic priority claims in the application data sheet filed with this application are incorporated herein by reference in accordance with 37 CFR 1.57.

[0003] This application claims U.S. Provisional Application No. 63 / 614081, filed December 22, 2023; U.S. Provisional Application No. 63 / 626428, filed January 29, 2024; U.S. Provisional Application No. 63 / 705960, filed October 10, 2024; U.S. Provisional Application No. 63 / 706442, filed October 11, 2024; and U.S. Provisional Application No. 63 / 706442, filed October 21, 2024. Priority claims to U.S. Provisional Application No. 63 / 709987; U.S. Provisional Application No. 63 / 720719, filed November 14, 2024; U.S. Provisional Application No. 63 / 725883, filed November 27, 2024; U.S. Provisional Application No. 63 / 711622, filed October 24, 2024; and U.S. Provisional Application No. 63 / 725468, filed November 26, 2024. The entire contents of each application cited in this paragraph are hereby incorporated, in their entirety, for all purposes and constitute a part of this specification. Technical Field

[0004] The disclosed technology generally relates to microelectromechanical systems (MEMS) switches, and more specifically to MEMS switches configured for high-voltage and high-current applications; and circuits and systems including the MEMS switches. Background Technology

[0005] MEMS switches, such as cantilever-based MEMS switches, are used in various electrical circuits to control electrical connections between different parts of the circuit. A MEMS switch can be configured as part of a circuit between input and output terminals to form a switchable conductive path between the input and output terminals, allowing current to flow through that conductive path when it is in an ON state. Reliably operating a MEMS switch for extended periods between input and output terminals with a large voltage difference can be challenging, for example, because the MEMS switch structure may degrade over time due to repeated switching operations over extended periods. Summary of the Invention

[0006] In some aspects, the technology described herein relates to a microelectromechanical (MEMS) switch comprising: a conductive beam anchored to a substrate by conductive posts, the conductive posts serving simultaneously as a mechanical pivot and a conductive path between the conductive beam and an intermediate electrode on the substrate; and a pair of contact electrodes formed on the substrate at opposite lateral sides of the conductive posts; wherein, upon activation of the MEMS switch, the conductive beam is configured to tilt such that one side of the conductive beam contacts one of the contact electrodes to form an additional conductive path, and wherein the conductive posts are closer to the first end of the conductive beam than to a second end of the conductive beam opposite to the first end of the conductive beam.

[0007] In some aspects, the technology described herein relates to a microelectromechanical (MEMS) switch comprising: a conductive beam anchored to a substrate by conductive posts, the conductive posts serving simultaneously as a mechanical pivot and a conductive path between the conductive beam and an intermediate electrode on the substrate; and a pair of contact electrodes formed on the substrate at opposite lateral sides of the conductive posts; wherein, upon activation of the MEMS switch, the conductive beam is configured to tilt such that one side of the conductive beam contacts one of the contact electrodes to form an additional conductive path, and the conductive path and the additional conductive path become electrically short-circuited to each other.

[0008] In some aspects, the technology described herein relates to a microelectromechanical (MEMS) switch comprising: a conductive beam anchored to a substrate by conductive posts, the conductive posts serving simultaneously as a mechanical pivot and a conductive path between the conductive beam and an intermediate electrode on the substrate; a pair of contact electrodes formed on the substrate at opposite lateral sides of the conductive posts; and a mechanical stopper formed on the bottom surface of the conductive beam and extending toward the substrate, wherein, upon activation of the MEMS switch, the conductive beam is configured to tilt such that one side of the conductive beam contacts one of the contact electrodes to form an additional conductive path, and the mechanical stopper is configured to substantially suppress elastic deformation of one or both of the conductive beam and the conductive posts.

[0009] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: an input terminal and an output terminal; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post, wherein the first contact electrode is electrically short-circuited to the conductive post; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes, wherein the input terminal, the first contact electrode, and the conductive post are commonly electrically connected, wherein upon activation of the MEMS switch, the conductive beam tilts in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, and a second side of the conductive beam is mechanically decoupled from the second contact electrode, thereby opening the path between the input and output terminals.

[0010] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting on a substrate via conductive posts to tilt in opposite directions, wherein the conductive posts are closer to the first end of the conductive beam relative to a second end of the conductive beam opposite to a first end; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts; and a first control. The first and second control electrodes are formed on a substrate at opposite lateral sides of a conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes. Upon activation of the MEMS switch, the conductive beam is tilted in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

[0011] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: an input terminal and an output terminal; a pair of microelectromechanical systems (MEMS) switches connected in series, the MEMS switches being electrically connected between the input terminal and the output terminal, wherein each of the MEMS switches comprises: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; and a first control electrode and a second control electrode. The second control electrode is formed on the substrate at the opposite lateral side of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes, wherein upon activation of the pair of MEMS switches, each conductive beam tilts such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal, wherein the first contact electrodes of the pair of MEMS switches are electrically short-circuited to each other.

[0012] In some aspects, the technology described herein relates to a circuit breaker system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via conductive posts to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive posts, wherein the first control electrode... Each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes, wherein, upon activation of the MEMS switch, the conductive beam is tilted in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode; and an isolation circuit comprising a first transformer configured to provide an activation voltage to the first control electrode as an isolation voltage for activating the MEMS switch.

[0013] In some aspects, the technology described herein relates to a circuit breaker system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via conductive posts to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive posts, wherein the first control electrode and the second control electrode... Each of the electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes, wherein, upon activation of the MEMS switch, the conductive beam is tilted in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode; and an isolation circuit comprising a plurality of transformers and configured to maintain a substantially constant voltage difference between the first control electrode and the conductive beam in the event of voltage variations at the input terminal connected to the conductive post.

[0014] In some aspects, the technology described herein relates to a circuit breaker system comprising: an input terminal and an output terminal; a pair of microelectromechanical systems (MEMS) switches connected in series, the MEMS switches being electrically connected between the input terminal and the output terminal, wherein each of the MEMS switches comprises: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein the first control electrode and the second control electrode... Each of the electrodes is laterally positioned between a conductive post and a corresponding one of the first and second contact electrodes. Upon activation of the pair of MEMS switches, each conductive beam tilts such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting an input or output terminal to the corresponding conductive post; and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input or output terminal and the second contact electrode; an isolation circuit comprising multiple transformers and configured to maintain a substantially constant voltage difference between the first and second control electrodes and the corresponding conductive beams in the event of voltage variations at the input terminal connected to the first contact electrode.

[0015] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: an input terminal and an output terminal; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes, wherein upon activation of the MEMS switch, the conductive beam tilts in a first direction, thereby opening a path between the input and output terminals; and a protection switch electrically connected in parallel between the MEMS switch and the input and output terminals, wherein the protection switch is configured to shunt at least a portion of the current flowing between the input and output terminals during activation of the MEMS switch and before the path opening is completed.

[0016] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input terminals and the output terminals, the MEMS switch comprising: a conductive beam pivoting on a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first control electrode and the second control electrode is laterally disposed between the conductive post and a corresponding one of the first contact electrode and the second contact electrode, wherein upon activation of the MEMS switch, the conductive beam tilts in a first direction, thereby opening the path between the input terminals and the output terminals for a time period of 0.1–10 ms until the MEMS switch reaches an open-circuit state; and a protection switch electrically connected in parallel to the MEMS switch between the input terminals and the output terminals.

[0017] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: input terminals and output terminals; a plurality of microelectromechanical systems (MEMS) switches electrically connected in parallel between the input terminals and the output terminals, each of the MEMS switches comprising: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first control electrode and the second control electrode is laterally disposed between the conductive post and a corresponding one of the first contact electrode and the second contact electrode, wherein upon activation of each MEMS switch, the conductive beam tilts in a first direction, thereby opening the path between the input terminals and the output terminals; and a protection switch electrically connected in parallel between the input terminals and the output terminals to the MEMS switches.

[0018] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input terminals and the output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first control electrode and the second control electrode is laterally disposed between the conductive post and a corresponding one of the first contact electrode and the second contact electrode; and an electrical overstress (EOS) protection device electrically connected between the input terminals and the output terminals to the MEMS switch, wherein in response to an EOS event, the EOS protection device is configured to be activated to provide a shunt current path.

[0019] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input terminals and the output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first control electrode and the second control electrode is laterally disposed between the conductive post and a corresponding one of the first contact electrode and the second contact electrode; and a spark gap device electrically connected to the MEMS switch and comprising a pair of conductive arc electrodes separated by a gap.

[0020] In some aspects, the technology described herein relates to a circuit breaker circuit system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input terminals and the output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first control electrode and the second control electrode is laterally disposed between the conductive post and a corresponding one of the first contact electrode and the second contact electrode; and an electrical overstress (EOS) protection device electrically connected between the input terminals and the output terminals to the MEMS switch, wherein the MEMS switch and the EOS protection device are fabricated on a common substrate using semiconductor manufacturing processes.

[0021] In some aspects, the technology described herein relates to a circuit breaker system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via conductive posts to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive posts, wherein the first control electrode... Each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes, wherein, upon activation of the MEMS switch, the conductive beam is tilted in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode; and an isolation circuit comprising a first opto-isolator configured to provide an activation voltage to the first control electrode as an isolation voltage for activating the MEMS switch.

[0022] In some aspects, the technology described herein relates to a circuit breaker system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via conductive posts to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive posts, wherein the first control electrode and the second control electrode... Each of the electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes, wherein, upon activation of the MEMS switch, the conductive beam is tilted in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode; and an isolation circuit comprising a plurality of opto-isolators and configured to maintain a substantially constant voltage difference between the first control electrode and the conductive beam in the event of voltage variations at the input terminal connected to the conductive post.

[0023] In some aspects, the technology described herein relates to a circuit breaker system comprising: an input terminal and an output terminal; a pair of microelectromechanical systems (MEMS) switches connected in series, the MEMS switches being electrically connected between the input terminal and the output terminal, wherein each of the MEMS switches comprises: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein the first control electrode and the second control electrode... Each of the electrodes is laterally disposed between a conductive post and a corresponding one of the first and second contact electrodes, wherein upon activation of the pair of MEMS switches, each conductive beam tilts such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting an input or output terminal to the corresponding conductive post, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input or output terminal and the second contact electrode; an isolation circuit comprising a plurality of opto-isolators and configured to maintain a substantially constant voltage difference between the first and second control electrodes and the corresponding conductive beams in the event of voltage variations at the input terminal connected to the first contact electrode.

[0024] In some aspects, the technology described herein relates to a circuit breaker system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input and output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via conductive posts to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive posts, wherein each of the first and second control electrodes is laterally disposed. Between a conductive post and a corresponding one of a first contact electrode and a second contact electrode; a current sensor connected in series with a MEMS switch between an input terminal and an output terminal; and a microcontroller communicatively coupled to the MEMS switch and the current sensor, wherein after the microcontroller determines that the current sensed from the current sensor exceeds a predetermined threshold, the microcontroller is configured to activate the MEMS switch by tilting the conductive beam in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode.

[0025] In some aspects, the technology described herein relates to a circuit breaker system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input terminals and the output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via conductive posts to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive posts; and a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive posts, wherein each of the first control electrode and the second control electrode is... The device comprises: a conductive beam laterally disposed between a conductive post and a corresponding one of a first contact electrode and a second contact electrode; a temperature sensor thermally connected to the MEMS switch; and a microcontroller communicatively coupled to the MEMS switch and the temperature sensor, wherein, upon determining that the temperature sensed from the temperature sensor exceeds a predetermined threshold, the microcontroller is configured to activate the MEMS switch by tilting the conductive beam in a first direction such that: a first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode; and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode.

[0026] In some aspects, the technology described herein relates to a circuit breaker system comprising: input terminals and output terminals; a microelectromechanical system (MEMS) switch electrically connected between the input terminals and the output terminals, the MEMS switch comprising: a conductive beam pivoting over a substrate via a conductive post to tilt in opposite directions; a first contact electrode and a second contact electrode formed on the substrate at opposite lateral sides of the conductive post; a first control electrode and a second control electrode formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first control electrode and the second control electrode is laterally disposed between the conductive post and a corresponding one of the first contact electrode and the second contact electrode; and one or more thin-film-based sensors co-fabricated on the same substrate to have at least one common physical dimension with the layers of the MEMS switch. Attached Figure Description

[0027] Embodiments of this disclosure will now be described by way of non-limiting examples with reference to the accompanying drawings.

[0028] Figure 1AThis is a schematic diagram illustrating a symmetrical microelectromechanical system (MEMS) teeter-totter switch.

[0029] Figure 1B This is a schematic diagram illustrating an asymmetric microelectromechanical system (MEMS) rocker switch.

[0030] Figures 2A to 2C An illustrative example Figure 1B The asymmetric MEMS rocker switch shown is in a neutral state. Figure 2A ), is in the first off state actuated by the first actuation voltage (OFF state) Figure 2B ) and in a second disconnected state actuated by a second actuation voltage greater than the first actuation voltage ( Figure 2C ).

[0031] Figures 3A to 3C The illustration schematically depicts an example asymmetric MEMS rocker switch with a stop in the neutral state. Figure 3A ), is in the first disconnected state actuated by the first actuation voltage ( Figure 3B ) and in a second disconnected state actuated by a second actuation voltage greater than the first actuation voltage ( Figure 3C ).

[0032] Figure 4A This is a schematic diagram illustrating a top view of an example symmetrical MEMS seesaw switch.

[0033] Figure 4B This is a schematic top view illustrating an example asymmetrical MEMS seesaw switch with two mechanical stops.

[0034] Figures 5A to 5B This is a top view illustrating an example asymmetric MEMS rocker switch with two mechanical stops. Figure 5A ) and side view section ( Figure 5B A schematic diagram of ( ).

[0035] Figures 6A to 6C Examples are shown in the manufacturing process. Figures 5A to 5B The image shows a side cross-sectional view of the intermediate structure of the asymmetric MEMS seesaw switch at different stages.

[0036] Figure 7 This is a schematic diagram illustrating an example MEMS switching circuit (e.g., a circuit breaker circuit) formed by connecting two seesaw switches.

[0037] Figure 8An example MEMS switching circuit (e.g., a circuit breaker) is schematically illustrated, which includes multiple MEMS rocker switches configured to connect / disconnect terminals of electronic circuitry and allow high current and high voltage connections between the terminals.

[0038] Figure 9A A MEMS seesaw switch is schematically illustrated, which is configured to electrically connect the contact electrode to an input voltage relative to the same reference voltage applied to the intermediate electrode when a control voltage relative to a reference voltage is provided to the control electrode of the seesaw switch.

[0039] Figure 9B A MEMS seesaw switch is schematically illustrated, which is configured to electrically connect a contact electrode to an input voltage applied to an intermediate electrode relative to a first reference voltage when a control voltage relative to a second reference voltage is provided to the control electrode of the seesaw switch. The second reference voltage is different from the first reference voltage.

[0040] Figure 9C It is an illustrative example of the... Figure 9A The seesaw switch shown (solid line) and Figure 9B The graph shown is a function of the input voltage supplied to the intermediate electrode, representing the resistance of the conductive path established between the post and the contact electrode in the seesaw switch (dashed line).

[0041] Figure 10 An example switching circuit is schematically illustrated, which includes a MEMS switch and control circuitry configured to control the state of the MEMS switch.

[0042] Figure 11A Another example switching circuit is schematically illustrated, which includes control circuitry and a MEMS switching network comprising two or more MEMS switches.

[0043] Figure 11B An example control signal voltage and the voltage supplied are schematically illustrated. Figure 10 and Figure 11A The time variation of the control voltage of the seesaw switch or seesaw switch network shown depicts the time alignment between the control signal voltage and the corresponding preceding and following control voltages.

[0044] Figure 12A An example of a packaged isolator circuit used in a control circuit is illustrated schematically.

[0045] Figure 12B Another example of an integrated isolator circuit, which includes a transformer chip and two integrated electronic circuits, is illustrated schematically.

[0046] Figure 12C An illustrative example Figure 12B The internal circuitry of the packaged integrated isolator circuit is shown.

[0047] Figure 13 An example switching circuit (e.g., a circuit breaker circuit system) including an optical isolator is illustrated schematically.

[0048] Figure 14 An example MEMS switching network controlled by an optically isolated control voltage is schematically illustrated.

[0049] Figure 15 An example integrated MEMS switching system is schematically illustrated, which includes a MEMS switching device, a voltage supply, and control circuitry configured to control the MEMS switching device.

[0050] Figures 16A to 16D The diagram illustrates the current flowing through the equivalent circuit of a MEMS switch protected by a protection switch during the transition of the MEMS switch from the ON state to the OFF state.

[0051] Figures 17A to 17B This schematically illustrates what happens when the protective switch is off ( Figure 17A ) and connect ( Figure 17B During the transition of the MEMS switch from the ON state to the OFF state, Figures 16A to 16C The calculated time variations of the current and voltage drop between the input and output terminals of the equivalent circuit shown.

[0052] Figures 17C to 17D This schematically illustrates what happens when the protective switch is off ( Figure 17C ) and connect ( Figure 17D During the transition of the MEMS switch from the off state to the on state, Figures 16A to 16C The calculated time variations of the current and voltage drop between the input and output terminals of the equivalent circuit shown.

[0053] Figure 18 An example switching circuit is schematically illustrated, which includes a MEMS switch protected by a field-effect transistor (FET) used as a protective switch; and a control circuit configured to control the state of the MEMS switch.

[0054] Figure 19 This schematically illustrates the provision during the transition from the off state to the on state. Figure 18 The control signal voltage of the MEMS switch, as well as the pre-control voltage, post-control voltage, and the gate voltage (V) supplied to the FET are shown. g Example time variations, and

[0055] Figure 20 An example circuit breaker is schematically illustrated, including a MEMS switch and an electrical overstress (EOS) protection device configured to protect the MEMS switch from transient signals.

[0056] Figure 21A Another example of a circuit breaker is illustrated schematically, which includes a MEMS switch; an electrical overstress (EOS) protection device configured to protect the MEMS switch from unexpected transient signals; and a protection switch configured to protect the MEMS switch during transitions between an on and off state.

[0057] Figure 21B Another example of a circuit breaker is illustrated schematically, which includes a MEMS switch; an electrical overstress (EOS) protection device configured to protect the MEMS switch from unexpected transient signals; and a protection switch configured to protect the MEMS switch during transitions between an on and off state.

[0058] Figure 22 A cross-sectional side view of a portion of an example circuit breaker is schematically illustrated, which includes a rocker switch and a multi-gap vertical spark gap array co-manufactured on a common substrate.

[0059] Figure 23 A system is schematically illustrated, which includes a MEMS switch module integrating one or more sensors and control circuitry for controlling the MEMS switch module and the one or more sensors.

[0060] Figures 24A to 24B A top view schematically illustrating an example MEMS switch including one or more integrated sensors is shown. Figure 24A ) and cross-sectional side view ( Figure 24B ).

[0061] Figure 25 The diagram illustrates a block diagram of an example circuit breaker, which includes a MEMS switching module protected by a protective switch and an EOS protection device and monitored using one or more sensors, including a temperature sensor and a current sensor.

[0062] Figure 26 This is an example Figure 25 The block diagram shown is of an example implementation of a circuit breaker system, which includes a MEMS switching module and various protection, monitoring, and control modules fabricated on separate dies.

[0063] Figure 27A yes Figure 25 and Figure 26The diagram shows a perspective view of an example implementation of a modular circuit breaker system, which includes multiple MEMS switching modules and various protection, monitoring, and control modules manufactured on individual dies and integrated on a circuit board.

[0064] Figure 27B This is a perspective view of another example of a modular circuit breaker system, which includes multiple MEMS switch modules and isolator modules integrated on a circuit board.

[0065] Figure 27C This is an example of... Figure 27B The diagram shows a block diagram of a single MEMS switch module among the multiple MEMS switch modules used in the modular circuit breaker system.

[0066] Figure 28A An example of a magnetically actuated MEMS switch is illustrated schematically.

[0067] Figure 28B A cross-sectional side view of a MEMS switch based on a magnetically actuated cantilever is schematically illustrated.

[0068] Figure 28C A cross-sectional side view of a magnetically actuated seesaw MEMS switch is schematically illustrated. Detailed Implementation

[0069] The following detailed description of certain embodiments presents various descriptions of particular embodiments. However, the innovations described herein can be embodied in many different ways, for example, as defined and covered by the claims. Reference is made to the accompanying drawings in this description, wherein the same reference numerals may indicate the same or functionally similar elements. It should be understood that the elements illustrated in the drawings are not necessarily drawn to scale. Furthermore, it should be understood that some embodiments may include more elements and / or a subset of the illustrated elements than are illustrated in the drawings. Additionally, some embodiments may incorporate any suitable combination of features from two or more drawings. The headings provided herein are for convenience only and do not necessarily affect the scope or meaning of the claims.

[0070] Switches are integral to a wide range of applications across various industrial sectors, including telecommunications, aerospace, healthcare, and consumer electronics. Different switching technologies offer different advantages and disadvantages. For some applications, desired switching technology characteristics include wide bandwidth, fast switching speed, reliability, scalability, and high-volume manufacturability. For example, disadvantages of electromechanical relay technology can include narrow bandwidth, limited actuation life, and large package size. In contrast, microelectromechanical systems (MEMS) switching technology offers the potential to provide higher bandwidth, higher reliability, and smaller form factor, among other advantages, compared to electromechanical relays. At the heart of MEMS switching technology is a micromachined beam switching element that is electrostatically actuated using metal-to-metal contacts.

[0071] An example application of MEMS switching technology is in circuit breakers. Circuit breakers are used in a wide variety of applications, including electric vehicle charging, secondary battery management, motor drives, and industrial power supplies, to name just a few. Circuit breakers use switches to interrupt power to sensitive electronic loads in the event of overcurrent and / or overvoltage conditions. The inventors have recognized that MEMS switches have the potential to improve upon conventional electromechanical circuit breakers by addressing the aforementioned drawbacks. However, existing MEMS switching technologies still face challenges for applications in circuit breaker technology, particularly due to limited current and voltage handling capabilities. For example, under high voltage and high current conditions, some MEMS switches may be prone to rapid wear or arcing of the beam switching elements. To address these and other needs, this paper discloses MEMS switches configured for high-voltage and high-current applications, as well as various systems and applications incorporating such MEMS switches.

[0072] MEMS switches for high current and / or high power

[0073] Various aspects of this disclosure provide microelectromechanical systems (MEMS) switches with a seesaw configuration, as well as methods for operating and manufacturing such switches.

[0074] In some implementations, a MEMS switch (e.g., a cantilever-based switch) may include a conductive beam connected to a post formed on or above a substrate and configured to be pulled toward the substrate upon actuation. When the MEMS switch is not actuated, the elastic restoring force of the beam (or hinge) can restore a predetermined separation between the free end of the conductive beam and a contact electrode formed on the substrate, causing the MEMS switch to become open or enter an off state. In some cases, when the MEMS switch is actuated, the free end of the conductive beam is pulled into contact with the contact electrode (e.g., by electricity), causing the switch to become closed (enter an on state) and establishing an electrical path between the contact electrode and the post. In some applications, the MEMS switch can be used to controllably connect or disconnect two terminals of a circuit (e.g., a circuit breaker circuit system) connected to the MEMS switch.

[0075] In some embodiments, a MEMS switch may include a beam anchored to a substrate via its midpoint, such that both ends of the beam can be actuated to move toward the substrate. Such a MEMS switch (referred to herein as a seesaw switch) may include a beam (e.g., a conductive beam) mechanically connected to the underlying substrate via a post (e.g., a conductive post) supporting the beam at a point between two opposite ends (e.g., free ends). In some cases, the beam may be connected to the post via a hinge or hinge structure that allows the beam to rotate relative to the post. In some embodiments, the post may be symmetrically positioned relative to the two opposite ends of the beam. In some such embodiments, the vertical spacing between the other end and the substrate may be substantially independent of which end is actuated, regardless of which end is actuated. In some embodiments, the post may be asymmetrically positioned relative to the two opposite ends of the beam. For example, the post may be closer to the first end of the beam relative to the second end opposite the first end. In some such embodiments, actuating a different end when the post is closer to one end of the beam may result in a different vertical spacing between the other end and the substrate.

[0076] In some cases, the post can serve as one or both of a mechanical pivot and a conductive path between the conductive beam and an intermediate conductive electrode (referred to herein as the intermediate electrode) formed on or within the substrate. In some embodiments, the beam can be configured to pivot or tilt controllably relative to the substrate (e.g., by an electrostatic actuation mechanism) to electromechanically couple one end of the beam to one of a pair of contact electrodes formed on the substrate. For example, the end of the beam may include a contact tip, and upon actuation of this end, the contact tip may make electrical contact with a corresponding contact electrode on the substrate. In some cases, one of the intermediate electrode and the contact electrode may be electrically connected to two different terminals of a circuit.

[0077] In some cases, in the ON state, the second end of the beam can contact (electromechanically coupled to) one of a pair of contact electrodes to establish a conductive path between the contact electrode and the intermediate electrode via the beam and, in some cases, via a contact end located at the second end. In some cases, in the OFF state, the rocker switch can be in a neutral state, wherein one or both ends of the beam are disconnected from the corresponding contact electrode. In some examples, in the OFF state, the vertical distance between the end of the beam and the corresponding contact electrode can be configured to prevent discharge or arcing under a target potential difference between that end and the corresponding contact electrode.

[0078] In some embodiments, the seesaw switch can be used as a two-port switch, for example, by electrically short-circuiting one of the contact electrodes, the intermediate electrode and the contact electrode. For example, the first contact electrode of the seesaw switch can be electrically connected to its intermediate electrode, and the seesaw switch can be configured to control the electrical connection between the second contact electrode and the intermediate electrode (and the post). In some such embodiments, in the off state, the second end of the beam can be disconnected from the second contact electrode, and the first end of the beam can be in contact with the first contact electrode. In some embodiments, for example, when the first electrode is short-circuited with the intermediate electrode, the seesaw switch can be actuated from the off state to the on state by actuating the beam (e.g., by pulling the second end toward the substrate) to mechanically disconnect its first end from the first contact electrode and mechanically connect its second end to the second contact electrode. In these embodiments, the seesaw switch can be actuated from the on state back to the off state by actuating the beam (e.g., by pulling the first end toward the substrate) to mechanically disconnect its second end from the second contact electrode and mechanically connect its first end to the first contact. In some implementations, for example, when a rocker switch is used in a circuit breaker between two terminals, the intermediate electrode may be electrically connected to the first terminal, and the second contact electrode may be electrically connected to the second terminal. In these implementations, the open state may be referred to as the active state of the MEMS switch, where the electrical connection between the two terminals is broken by the circuit breaker. Therefore, in these implementations, the closed state may be referred to as the deactivated state of the MEMS switch, where an electrical connection is established between the two terminals via the beam of the rocker switch.

[0079] In some examples, when the column is asymmetrically positioned relative to the first and second ends of the beam and the rocker switch is in the off state, the vertical distance between the second end of the beam and the second contact electrode (referred to herein as the off-state gap) can be greater than the corresponding vertical distance for a rocker switch with a column symmetrically positioned relative to the first and second ends of the beam. Advantageously, a larger off-state gap allows the rocker switch to be used for high-voltage switching because the larger vertical distance between the second end and the corresponding contact electrode in the off state (e.g., when the switch is activated) can provide electrical isolation at higher voltages by increasing the breakdown voltage at which electric arcing may occur. Therefore, asymmetrical rocker switches can be used for higher voltage applications compared to some existing symmetrical rocker switches. In some cases, the upper limit of the voltage that can be switched by the rocker switch can be referred to as the operating voltage (V) of the rocker switch. m The off-state gap of a rocker switch configured as a two-port device can be further increased by positioning the post closer to the end of the beam (e.g., the second end) and / or increasing the length of the beam, the end of which is closer to the contact electrode short-circuited with the intermediate electrode. The inventors have discovered that the operating voltage of the rocker switch can be increased by adjusting the off-state gap.

[0080] In some embodiments, a larger open-state gap provided by a longer beam or positioning the column closer to one end of the beam can increase stress on the hinge, column, and / or beam, particularly when the seesaw switch is in the open state. In some cases, excessive stress can reduce the lifespan of the seesaw switch and increase the complexity of the reliable mechanical design for anchoring the beam to the base plate (e.g., the complexity of the hinge connecting the beam to the column). The inventors have discovered that stress transmitted to the beam, column, and / or hinge can be reduced by forming a mechanical stop under the beam. In some embodiments, after actuating the seesaw switch, the mechanical stop contacts the base plate and allows the beam to tilt or pivot about the contact point between the mechanical stop and the base plate, thereby reducing stress on the beam, hinge, and / or column. In some embodiments, the mechanical stop can be positioned near or at the longitudinal location of the column relative to both ends of the beam. In some embodiments, the mechanical stop can be positioned longitudinally between one end of the column and the beam (e.g., the first end when the first contact electrode is short-circuited to the intermediate electrode). In various implementations, the seesaw switch may include two mechanical posts (e.g., at the same longitudinal position and different lateral positions relative to the beam).

[0081] In some embodiments, the electrostatic actuation mechanism for controlling or actuating the seesaw switch may include an electrostatic force applied to a beam by two capacitors formed on opposite sides of a column, each capacitor including a conductive control electrode (referred to herein as a control electrode) formed on a substrate and a portion of the beam above the control electrode. Therefore, in order to change the state of the seesaw switch from an off state to an on state (e.g., to bring a second end of the beam into contact with a corresponding contact electrode) and vice versa, a sufficiently large voltage (referred herein as the switching voltage V) can be applied across one of the two capacitors. s ).

[0082] Figure 1A This is a schematic diagram of a symmetrical MEMS rocker switch 100. In some embodiments, the symmetrical MEMS rocker switch 100 may include a beam 105, a column 121, two contact electrodes 106, 109, two control electrodes 108, 110, and an intermediate electrode 120 formed on a substrate (not shown).

[0083] In some embodiments, beam 105 may extend from a first end (or first edge) 112 to a second end 114 (or second edge) and have a width (w) in a transverse direction perpendicular to the longitudinal direction (e.g., perpendicular to the x-axis and z-axis). In some embodiments, beam 105 may be positioned to form one or more mechanical connections (e.g., via one or more hinges) with anchors or posts 121, which may be disposed on a substrate (e.g., a silicon substrate). In some cases, the anchoring point or anchoring region 119 of beam 105 mechanically connected to post 121 may be symmetrically positioned relative to the first end 112 and the second end 114 of beam 105, such that a first distance (L) between the anchoring point or anchoring region 119 and the first end 112 is substantially equal to a second distance (L) between the anchoring point or anchoring region 119 and the second end 114.

[0084] In some embodiments, beam 105 and column 121 may comprise conductive materials such as gold, aluminum, copper, nickel, metallic alloys, or any other suitable conductive material. In some cases, the structural material of the beam (e.g., a conductive material) may be selected to provide beam 105 with a desired level of stiffness, for example, to prevent bending when subjected to forces or torques (e.g., electrostatic forces or torques used to actuate the beam) during operation of the seesaw switch. In some embodiments, beam 105 may comprise a single material or a homogeneous material composition (e.g., a single alloy). In other embodiments, beam 105 may comprise a multi-layered structure, wherein at least two layers are composed of different materials. For example, beam 105 may comprise a first structural material providing mechanical stiffness and a second structural material providing conductivity. In some cases, beam 105 may comprise two separate zones with different material compositions.

[0085] In some cases, beam 105 may be configured to adequately resist bending during operation of the seesaw switch 100, and the hinge connecting beam 105 to column 121 may be configured to allow beam to rotate about column 121.

[0086] In some embodiments, the intermediate electrode 120 may be electrically connected to the post 121. In some such embodiments, the intermediate electrode 120 may be formed between the post 121 and a substrate (not shown) and may be in direct contact with the post 121. In some embodiments, the intermediate electrode 120 may be electrically connected to a first terminal 102 (e.g., an input terminal), and one of the first contact electrode 106 and the second contact electrode 109 (the second contact electrode 109 in the illustrated example) may be electrically connected to a second terminal 104 (e.g., an output terminal) of an electronic circuit (e.g., a circuit breaker). In some embodiments, the first terminal 102 and the second terminal 104 may be respectively the high-voltage input and low-voltage output terminals of the circuit breaker. In some embodiments, the rocker switch 100 may be configured to control the electrical connection between the first terminal 102 and the second terminal 104 by closing and opening the electrical path between the first terminal 102 and the second terminal 104 via the beam 105 and the post 121. In some examples, when the rocker switch is in the ON state, the second end 114 of beam 105 can make electrical contact with the second contact electrode 109 to establish a conductive path between the first terminal 102 and the second terminal 104. In some examples, when the rocker switch 100 is in the OFF state, the first end of beam 105 can make electrical contact with the first contact electrode 106, and the second end 114 of beam 105 can be separated from the second contact electrode 109 by a vertical distance (Z1, along the z-axis) to electrically isolate the first terminal 102 and the second terminal 104. In some embodiments, contact tips can be formed on either end of beam 105 to improve the electrical contact between beam 105 and the corresponding contact electrodes 106, 109.

[0087] In some embodiments, the seesaw switch 100 may include a pair of control electrodes 108, 110 configured to form two capacitive actuators on opposite sides of the post 121 relative to the lateral direction (x-axis), wherein each capacitive actuator is formed between the control electrode and a portion of the beam 105 above the control electrode, and is configured to apply an attraction force to a receiving portion of the beam 105 to pull down the end of the beam closer to the control electrode. In some examples, the first control electrode 108 may be formed between the first contact electrode 106 and the intermediate electrode 120 and / or the post 121, and the second control electrode 110 may be formed between the second contact electrode 109 and the intermediate electrode 120 and / or the post 121. In some cases, in order to change the state of the seesaw switch 100 from an off state to an on state (e.g., to bring the second end 114 of the beam 105 into contact with the second contact electrode 109), a sufficiently large voltage (referred herein to as the switching voltage V) may be applied across the second capacitor formed between the beam 105 and the second control electrode 110. s In order to change the state of the seesaw switch 100 from the on state to the off state (e.g., to disconnect the first end 114 of the beam 105 from the second contact electrode), a sufficiently large voltage (equal to or greater than V) can be applied across the first capacitor formed between the beam 105 and the first control electrode 108. s In some cases, in the open state, the first end 112 of beam 105 can contact the first contact electrode 106 (e.g., when the intermediate electrode 120 is electrically connected to the first contact electrode 106, maximizing the open state gap size Z1 and further closing the electrical circuit between beam 105 and column 121). In some cases, the rocker switch 100 can be in a neutral state when both ends of beam 105 are disconnected from their respective contact electrodes.

[0088] In some embodiments, when the second contact electrode 109 contacts the second end 114 in the ON state, the resistance of the electrical path established by the seesaw switch 100 (e.g., the electrical path between the first terminal 102 and the second terminal 104) can vary with the electrostatic force applied to the beam 105, for example, by providing a potential difference between the second control electrode 110 and the beam 105. Therefore, in some cases, the switching voltage V supplied to the control electrode 110... s The voltage can be greater than the voltage that not only contacts the second end 114 with the second contact electrode 109 but also provides a conductive path with a resistance lower than the desired value. In some cases, the switching voltage V used to actuate the MEMS switch from an off state to an on state is... s It can be the actuation voltage that establishes a conductive path via a MEMS switch, the conductive path having a resistance equal to or lower than the specified on-state resistance.

[0089] In some embodiments, when the rocker switch 100 is in the off state, the voltage difference between the first terminal 102 and the second terminal 104 can be limited by the vertical distance Z1 or the off-state gap of the rocker switch 100 and the corresponding breakdown voltage between the second end 114 of the beam 105. Therefore, increasing the vertical distance Z1 may be advantageous, allowing the rocker switch 100 to switch at a higher voltage. In various embodiments, Z1 can be increased by increasing one or both of the height of the column 121 (e.g., along the z-axis), the total length (2L) of the beam 105, and / or by bringing the column 121 closer to the first end 112 (making the rocker switch asymmetrical).

[0090] Figure 1B An asymmetric MEMS seesaw switch 150 according to an embodiment is schematically illustrated. The seesaw switch 150 includes a conductive post 123 positioned closer to the first end 116 of the conductive beam 107 relative to a second end 118 opposite the first end 116. In some embodiments, the seesaw switch 150 may include one or more features described above with respect to seesaw switch 100. In some examples, a first distance (L1) between the anchor point or anchoring region 127 of the beam 107 (where the beam 107 is mechanically connected to the post 123) and the first end 116 is at least 3%, at least 5%, at least 7%, at least 10%, at least 15%, or at least 20% of the total length of the conductive beam (e.g., L1+L2), or a value within a range defined by any of these values, than a second distance (L2) between the anchoring region 127 of the beam 107 and the second end 118. In some embodiments, the column 123 can be positioned closer to the first end 116 than the second end 118 of the beam 107 by at least 3%, at least 5%, at least 7%, at least 10%, at least 15%, or at least 20% of the length of the conductive beam 107 (e.g., L1+L2). Advantageously, when the total lengths of the beams 105 and 107 and the heights of the columns 121 and 123 are substantially equal and the rocker switches 100 and 150 are in the off state, the vertical distance Z2 can be greater than the vertical distance Z1. As a result, the dielectric (air) gap between the second contact electrode 109 and the second end 118 of the beam 107 (the off state gap of the asymmetrical rocker switch 150) can have a larger breakdown voltage compared to the dielectric (air) gap between the second contact electrode 109 and the second end 114 of the beam 105 (the off state gap of the symmetrical rocker switch 100). Therefore, in some embodiments, the asymmetrical rocker switch 150 ( Figure 1B Operating voltage (V) m The upper limit can be greater than that of a symmetrical seesaw switch 100 ( Figure 1AThe upper limit of ). Advantageously, the asymmetrical seesaw switch 150 can be used in high-voltage electronic circuits (e.g., high-voltage circuit breakers) to control electrical connections between terminals having voltage differences greater than 100 volts, 150 volts, 200 volts, 300 volts, 400 volts, 500 volts, or a range of voltages defined by any or greater of these values.

[0091] As disclosed herein, the first contact electrode 106 of the asymmetric rocker switch 150, closer to post 123, may be referred to as the rear contact electrode of the asymmetric rocker switch 150, and the second contact electrode 109 of the asymmetric rocker switch 150, further away from post 123 (compared to the first contact electrode 106), may be referred to as the front contact electrode of the asymmetric rocker switch 150. In some cases, terminals of electronic circuitry (e.g., a circuit breaker circuit system) may be electrically connected to the intermediate electrode 125 and the front contact electrode 109 of the asymmetric rocker switch 150, such that in the open state, electrical isolation is provided by the larger gap between the second end 118 of beam 107 and the front contact electrode 109, thereby allowing tolerance to larger voltage differences. In some such cases, the rocker switch 150 may be configured as a two-port device, and the intermediate electrode 125 may be electrically connected to the first contact electrode 106.

[0092] As disclosed herein, a MEMS switch, such as an asymmetric rocker switch, can be said to be activated when the end of the conductive beam further away from the conductive post is lifted and not in electrical contact with the corresponding contact electrode. For example, as Figure 1B The illustrated asymmetric rocker switch 150 can be described as being in an active state, wherein the second contact electrode 109 and the second end 118 of the beam 107 are electrically disconnected from each other. Conversely, a MEMS switch (such as an asymmetric rocker switch) can be described as being deactivated when the end of the conductive beam closer to the conductive post is raised and not in electrical contact with the corresponding contact electrode. For example, the asymmetric rocker switch 150 can be described as being deactivated when the first contact electrode 106 and the first end 116 of the beam 107 are electrically disconnected from each other.

[0093] In various implementations, MEMS rocker switches 100 and 150 can be used to disable / enable an electrical connection between two circuit elements, or to route a signal to or from one of the two circuit elements. In other implementations, multiple rocker switches can be used to perform more complex functions.

[0094] Figures 2A to 2C This schematically illustrates the situation when the voltage difference between control electrodes 108 and 110 and beam 107 is substantially zero. Figure 2A), and when the first voltage difference V1 and the second voltage difference V2 are applied between the control electrode 108 and the beam 107 (respectively... Figure 2B and 2C When the seesaw switch is actuated to the open state (e.g., the state in which the first end 116 of beam 107 is in contact with the first contact electrode 106), it is in a neutral state. Figure 2A An asymmetric MEMS seesaw switch 150. In some cases, V1 and V2 can be configured to counteract the electrostatic force applied between the second end 118 and the second contact electrode 109 (e.g., due to the voltage difference between the intermediate electrode 125 and the second contact electrode 109) and maintain an open state gap (e.g., Z2). In some cases, with Figure 2B In comparison, the voltage difference between the second end 118 of beam 107 and the front contact electrode 109 is... Figure 2C The value of V2 can be larger. Therefore, V2 can be greater than V1 to counteract the larger electrostatic attraction between the second end 118 and the front contact electrode 109, and to maintain the vertical distance Z2 between them. Figures 2A to 2C As shown, actuating beam 107 and tilting it can induce mechanical stress in the hinge 303 that connects beam 107 to column 123, and a larger electrostatic force (F2) applied closer to the first end 116 (via control electrode 108) (e.g., to counteract the electrostatic force pulling the second end 118) can cause significant elastic deformation of hinge 303 (e.g. Figure 2C (As shown). In some examples, the elastic deformation of hinge 303 can reduce the vertical distance Z2 and the corresponding breakdown voltage. In some embodiments, when the length L2 is increased to increase the operating voltage of the seesaw switch, the mechanical stress and deformation induced in hinge 303 and beam 107 will increase.

[0095] The inventors have discovered that the mechanical stresses and deformations induced in the hinge 303, column 123, and / or beam 107 can be reduced by providing a mechanical stop between the beam 107 and the substrate on which the seesaw switch is formed, such that the bulk of the mechanical load generated by the electrostatic force applied to the seesaw switch structure is carried by the mechanical stop and transferred to the substrate. In some embodiments, the mechanical stop may be formed at the bottom surface of the beam 107 and extend toward the substrate. In some cases, the mechanical stop may not be connected to the substrate and may move or rotate freely relative to the substrate while contacting the substrate via the bottom surface (e.g., a curved surface). In some cases, after actuation (e.g., activation or deactivation) of the MEMS switch, the mechanical stop may contact the substrate to act as a fulcrum and substantially limit the elastic deformation of one or more of the beam 107, column 123, or hinge 303.

[0096] Figures 3A to 3CThe illustration schematically illustrates the situation when the voltage difference between control electrodes 108 and 110 and beam 107 is substantially zero, and when a first voltage difference V1 and a second voltage difference V2 (respectively) are applied between control electrodes 108 and beam 107. Figure 3B and Figure 3C When the rocker switch is actuated to the open state (e.g., the first end 116 of beam 107 contacts the first contact electrode 106), the asymmetric MEMS rocker switch 300 with mechanical stop 504 is in a neutral state. Figure 3A ).and Figures 2A to 2C Similarly, with Figure 3B In comparison, the voltage difference between the second end 118 of beam 107 and the front contact electrode 109 is... Figure 3C The medium can be larger. In some implementation schemes, Figures 3A to 3C The rocker switch 300 shown may include the features described above. Figure 1B and Figures 2A to 2C The rocker switch 150 shown describes one or more features. In some embodiments, a mechanical stop 504 may be formed on the bottom surface of the beam 107 and extend toward the substrate (not shown). In some cases, when the rocker switch is in the neutral state ( Figure 3A The mechanical stop 504 may not contact the substrate. In some embodiments, the seesaw switch is actuated, for example, by applying a voltage difference between the first control electrode 108 and the beam 107, causing the beam 107 to tilt. Figure 3B When the MEMS rocker switch 300 is actuated, the mechanical stop 504 can contact the substrate to limit (e.g., substantially limit) the stresses in the hinge 304 and, in some cases, in the post 123 and / or beam 107 that generate elastic deformation. In some embodiments, when the MEMS rocker switch 300 is actuated, the mechanical stop 504 can act as a mechanical pivot (or fulcrum), and the post 123 can act as a conductive path between the beam 107 and the intermediate electrode 125, and as an anchor providing a mechanical connection between the beam 107 and the substrate (via the hinge 304). In some cases, the hinge 304 can be configured to provide a mechanical connection between the post 123 and the beam 107 without significantly limiting the movement (e.g., rotational movement) of the beam 107 relative to the post 123. For example, the hinge 304 can be thinner, narrower, or otherwise smaller in size compared to the hinge 303 of a rocker switch 150 without a mechanical stop. For example, hinge 303 may include multiple segments connecting column 123 to beam 107, and hinge 304 may include a single segment connecting column 123 to beam 107.

[0097] like Figures 3A to 3CAs shown, actuating beam 107 and tilting beam 107 can bring stop 504 into contact with the substrate, and once stop 504 contacts the substrate, it can be used as a mechanical pivot to reduce mechanical stress in hinge 304, so that the large electrostatic force (F2) applied near the first end 116 (via control electrode 108) does not cause significant deformation of hinge 304 (e.g.) Figure 3C (As shown). In other words, when the force applied to beam 107 increases (e.g., to switch a larger voltage), mechanical stop 504 can significantly reduce or substantially eliminate the elastic deformation of hinge 304 and can maintain the vertical distance Z2 at a desired value (or within a desired range). In some cases, stop 504 can allow an increase in length L2, and thus allow for an increase in the operating voltage (V) of the seesaw switch. m The increase of ).

[0098] In some embodiments, the mechanical stop 504 may comprise a conductive material. In some such embodiments, the mechanical stop 504 may simultaneously serve as a conductive path or supplementary conductive path between the mechanical pivot and the beam 107 and the intermediate electrode 125. In some examples, an additional intermediate electrode 511 may be formed on a substrate below the stop 504 such that when the rocker switch 300 is actuated, the stop 504 contacts the additional intermediate electrode 506, establishing a conductive path between the beam 107 and the additional intermediate electrode 506. In some embodiments, the additional intermediate electrode may be electrically connected to the intermediate electrode 125. Thus, in some embodiments, the mechanical stop 504 may provide a conductive path parallel to the conductive path provided by the post 123 to reduce the resistance between the beam 107 and the intermediate contact electrode 125, and thereby increase the current handling limit of the rocker switch 300.

[0099] In various embodiments, the mechanical stop 504 may be positioned at the same or different longitudinal locations as the column 125 relative to the beam 107. For example, the mechanical stop may be closer to the first end 116, for instance, to provide a larger open-state gap (Z2) and / or to support more mechanical load during the open state. It should be understood that in the open state, a greater actuating force may be applied to the beam 107 to counteract the attractive force generated by the voltage between the beam 107 and the front contact electrode 109, compared to the on state in which the actuating force does not counteract any opposing electrostatic force.

[0100] In addition to high-voltage enabling features such as asymmetric positioning of the column and mechanical stop, the rocker switch can be further configured for high-current applications by distributing current between the beam and multiple contact electrodes (e.g., multiple electrically connected contact electrodes distributed below the ends of the beam).

[0101] Figure 4AThis is a schematic top view illustrating a symmetrical MEMS seesaw switch (similar to MEMS seesaw switch 100), which includes a conductive beam 505 connected to a rectangular post 521 via a multi-segment hinge 502. The post 521 anchors the beam 107 to a substrate via the multi-segment hinge 502 and serves as a mechanical pivot. In the example shown, the symmetrical MEMS seesaw switch includes a first pair of contact electrodes 506 below a first longitudinal end (edge) of the beam 505 and a second pair of contact electrodes 509 below a second longitudinal end (edge) of the beam 505.

[0102] Figure 4B This is a schematic top view illustrating an asymmetric MEMS rocker switch, which includes a conductive beam 507 connected to a square post 523 via a hinge 514, and two mechanical stops 525a, 525b formed on opposite sides (e.g., opposite lateral sides) of the post 523 below the beam 507. In some cases, the hinge 514 may be a single-segment hinge and / or may be more than a single-segment hinge. Figure 4A The multi-segment hinge 502 is thicker. In some cases, the column 523 may have a smaller cross-sectional area compared to the rectangular column 521. In some embodiments, the column 523 can anchor the beam 507 to the substrate and can electrically connect the beam 507 to an intermediate electrode (not shown) formed on the substrate. In some cases, mechanical stops 525a, 525b below the beam 507 can act as mechanical pivots when the beam 507 rotates relative to the column 523. In some such cases, the hinge 514 can stabilize the beam 507 by maintaining its lateral and longitudinal positions relative to the column 523 when the beam 507 pivots. Figure 4B The asymmetric MEMS seesaw switch shown may include a first pair of contact electrodes 508 below a first longitudinal end (edge) of beam 507 and a second pair of contact electrodes 510 below a second longitudinal end (edge) of beam 507.

[0103] Figures 5A to 5B This is a top view illustrating an example asymmetric MEMS seesaw switch according to some embodiments disclosed herein. Figure 5A ) and side view section ( Figure 5B A schematic diagram of ). In the example shown, Figures 5A to 5BThe illustrated seesaw switch may include a rectangular beam 407 mechanically connected to a substrate 700 via two hinges 403a, 403b and a post (anchor) 402. In some embodiments, the post 402 may be formed on the substrate 700, and the two hinges 403a, 403b may connect a portion of the beam 407 closer to a first end of the beam 407 to the post 402. In some embodiments, the post 402 may be configured to electrically connect the beam 404 to an intermediate electrode 125. In some embodiments, the post 402 may be formed of a conductive material, or at least include a conductive path extending from the hinges 403a, 403b to the intermediate electrode 125 and, for example, electrically connecting the intermediate electrode 125 to the post 407 via the hinges 403a, 403b. In some examples, the post 402 may comprise gold, doped gold, nickel, doped nickel, platinum, ruthenium, or an alloy formed of these materials or other conductive materials.

[0104] In some implementation schemes, Figures 5A to 5BThe illustrated seesaw switch may include two mechanical stops 406a, 406b disposed on opposite lateral sides of post 402 and configured to mechanically support beam 407, for example, when beam 407 is actuated and rotates relative to post 402 and base plate 700. In some embodiments, the mechanical stops may be formed on the bottom surface of beam 407 (facing base plate 700) and may extend vertically toward base plate 700. In some cases, stops 406, 406b may be configured to provide additional mechanical connection between beam 407 and base plate 700, allowing beam 407 to pivot about a contact point between stop 404 and base plate 700, and reducing mechanical stress on hinges 403a / b and post 402 when the seesaw switch is actuated. In some examples, the bottom surfaces of one or both mechanical stops 406a, 406b may be shaped to allow each mechanical stop to pivot about a contact point between the mechanical stop and base plate 700. For example, the bottom surface of the mechanical stop may include a circular shape. In some examples, mechanical stops 406a, 406b may comprise gold, doped gold, nickel, doped nickel, platinum, ruthenium, or an alloy formed from these materials or other conductive materials. In some cases, hinges 403a, 403b may be configured to allow beam 407 to tilt relative to substrate 700 while maintaining the mechanical connection between beam 407 and post 402. In some examples, the area of ​​beam 407 connected to post 402 may include an opening 405 configured to allow beam 407 to rotate within a specified angular range without contacting post 402. In some embodiments, at least a portion of each of beam 407, post 402, and hinges 403a, 403b may comprise a conductive material and may be configured to provide a conductive path between the end area of ​​beam 407 above the respective contact electrode and the contact electrode 125 formed on substrate 700. In various embodiments, hinges 403a and 403b may comprise gold, doped gold, nickel, platinum, ruthenium, or other conductive materials. In some cases, an intermediate electrode 125 may be formed between the post 402 and the substrate 700. In some embodiments, the width of hinges 403a and 403b (e.g., along the x-axis) may be 1 to 3 micrometers, 3 to 5 micrometers, 5 to 10 micrometers, or any range formed by these values ​​or greater or less. In some embodiments, the length of hinges 403a and 403b (e.g., along the y-axis) may be 1 to 5 micrometers, 5 to 10 micrometers, 10 to 15 micrometers, 15 to 20 micrometers, or any range formed by these values ​​or greater or less.

[0105] In some embodiments, the column 402, opening 405, and mechanical stops 406a, 406b may be closer to the first end or edge (e.g., the rear end) of the beam 407. For example, the longitudinal distance L1 between the column 402 and the rear end of the beam 407 (e.g., along the length of the beam 407) may be greater than the longitudinal distance L2 between the column 402 and the front end of the beam 407. In some embodiments, the ratio between L2 and L1 (L2 / L1) may be greater than 1.05, greater than 1.1, greater than 1.2, greater than 1.3, greater than 1.5, greater than 1.7, greater than 2, or a greater value. In some embodiments, L2 may be at least 3%, at least 5%, at least 7%, at least 10%, at least 15%, or at least 20% greater than L1 of the total length of the beam 407 (e.g., L1+L2). In some embodiments, the column 402 may be configured to be at least 3%, at least 5%, at least 7%, at least 10%, at least 15%, or at least 20% of the length of the conductive beam 407 (e.g., L1+L2) closer to the first end relative to the second end of the beam 407.

[0106] In various embodiments, at least a portion of beam 407 may comprise a conductive material. In some examples, beam 407 may include conductive regions providing electrical connections between contact ends 716a, 716b disposed at a first edge of the lugs of beam 407, hinges 403a, 403b, and thus post 402 and contact ends 718a, 718b disposed near a second edge of beam 407. In various embodiments, beam 407 may comprise gold, doped gold, nickel, doped nickel, platinum, ruthenium, or alloys comprising these materials or other conductive materials.

[0107] Continue to refer to Figures 5A to 5B In some cases, beam 107 may include a first pair of conductive contact ends 716a, 716b near a first end or end region (e.g., a rear end) of beam 407, and a second pair of conductive contact ends 718a, 718b near a second end or end region (e.g., a front end) of beam 407 opposite to the first end. In some examples, beam 107 and contact ends 716a / 716b or 718a / 718b may contain conductive material. In some cases, contact ends 716a / 716b or 718a / 718b may be electrically connected to column 402 via conductive areas of beam 407 and two hinges 403a, 403b.

[0108] In some cases, the first pair of contact terminals 716a / 716b may be positioned above the first pair of contact electrodes 106a / 106b formed on the substrate 700, and the second pair of contact terminals 718a / 718b may be positioned above the second pair of front contact electrodes 109a / 109b to allow electrical contact between the first pair of contact electrodes 106a / b and the first pair of contact terminals 716a / b, or between the second pair of contact electrodes 109a / b and the second pair of contact terminals 718a / b, when the rocker switch is actuated.

[0109] In some cases, the first (front) control electrode 108 and the second (rear) control electrode 110 formed on the substrate 700 can be configured to capacitively actuate the seesaw switch and cause the beam 407 to pivot about the contact point between the stops 406a, 406b and the substrate 700. In some cases, the bottom surface of the stops 406a, 406b that comes into contact with the substrate 700 may include a curved surface having a radius of curvature of 0.5 to 1 micrometer, 1 to 5 micrometers, 5 to 10 micrometers, or any range formed by these values ​​or greater or less. In some cases, the width of the stops 406a, 406b (e.g., along the x-axis) may be 0.5 to 1 micrometer, 1 to 5 micrometers, 5 to 10 micrometers, or any range formed by these values ​​or greater or less. In some implementations, for example, when the rocker switch is configured as a two-port device, such as in a circuit breaker, the rocker switch can be deactivated from an open state to an on state by providing a voltage difference between the front control electrode 110 and beam 407 to pull the front end of beam 407 toward substrate 700 so that contact ends 718a / 718b contact the corresponding front contact electrodes 109a / 109b. In some such implementations, the rocker switch can be activated from an on state to an open state by providing a voltage difference between the rear control electrode 108 and beam 407 to pull the rear end of beam 407 toward substrate 700 so that contact ends 716a / 716b contact the corresponding rear contact electrodes 106a / 106b. It should be understood that in the competition of circuit breaker circuit systems, activation (e.g., activation of the circuit breaker and the MEMS switch therein) can include disconnecting the electrical connection between two terminals, and deactivation (which can include the electrical connection between two terminals, and deactivation can include establishing an electrical connection between two terminals).

[0110] In some embodiments, the rear contact electrodes 106a / 106b may be electrically connected to the intermediate electrode 125 and the post 402, for example, via one or more wires formed on or in the substrate 700.

[0111] It should be understood that Figures 5A to 5BThe illustrated embodiment is a non-limiting example of an asymmetric seesaw switch with a stop, and other configurations are possible. For example, beam 407 may include one or more than two contact ends near each edge (end), the number of contact ends near the two edges may be different, the contact ends of a pair of contact ends near the same edge may be positioned at two different distances from post 402, opening 405 may have different geometries, more than two hinges may secure beam 407 to post 402, multiple posts may be used to anchor beam 107 to base plate 700, and stop 504 may have different geometries; other variations are possible, for example, the thickness of the corresponding layer, the shape of the stop, the shape of the post, etc., may vary in different examples.

[0112] In some implementations, a seesaw switch (e.g., Figure 5A The width (W) of the seesaw switch shown can be 20 micrometers to 50 micrometers, 50 micrometers to 70 micrometers, 70 micrometers to 100 micrometers, 100 micrometers to 150 micrometers, 150 micrometers to 200 micrometers, or a value within a range defined by any one of these values ​​or a value greater or smaller than a value. In some embodiments, the seesaw switch (e.g., Figure 5A The length (L=L1+L2) of the seesaw switch shown can be 30 to 60 micrometers, 60 to 100 micrometers, 100 to 150 micrometers, 150 to 200 micrometers, 200 to 250 micrometers, or 250 to 300 micrometers, within a range defined by any one of these values ​​or a value greater or less than a certain value. In some embodiments, the width of the opening 405 (e.g., along the y-axis) can be 10 to 50 micrometers, 50 to 100 micrometers, or 100 to 150 micrometers, or within a range defined by any one of these values ​​or a value greater or less than a certain value. In some embodiments, the length of the opening 405 (e.g., along the x-axis) can be 10 to 50 micrometers, 50 to 100 micrometers, or 100 to 150 micrometers, or within a range defined by any one of these values ​​or a value greater or less than a certain value.

[0113] Figures 6A to 6C Examples are shown in the reference above. Figures 5A to 5B Side cross-sectional view of the intermediate structure of the asymmetric MEMS rocker switch at various manufacturing stages.

[0114] refer to Figure 6AA substrate 700 may be provided, and rear contact electrodes 106 / a / b, front contact electrodes 109a / b, intermediate electrode 125, and control electrodes 108 and 110 may be formed on the main top surface of the substrate 700, for example, by forming (e.g., depositing) and patterning a conductive layer on the substrate 700. In some embodiments, the main top surface of the substrate 700 may include a silicon dioxide layer (or another dielectric layer), and electrodes 106, 109, 125, 108, and 110 may be formed on the silicon dioxide layer. In some cases, the conductive layer may include a metal layer, and patterning the conductive layer may include photolithographic patterning of a photoresist layer deposited on the metal layer and etching of uncovered portions of the conductive layer. In some embodiments, the substrate 700 may comprise silicon, aluminum oxide, and / or silicon dioxide, or another suitable material or combination of materials. In some embodiments, the metal layer may comprise gold, aluminum, copper, or alloys including these other metals.

[0115] refer to Figure 6B A sacrificial layer 801 may be formed on the substrate 700 and on the electrodes 106, 108, 125, 110, and 109 thereon, and beam 407 may be formed on the sacrificial layer 801, for example, by depositing and patterning a structural material (e.g., a metal). In some embodiments, the sacrificial layer 801 may comprise silicon dioxide, a polymer, and / or a metal. In some examples, the thickness of the sacrificial layer 801 may be from 50 nm to 5 μm. In some examples, when the seesaw switch is in a neutral state, the thickness of the sacrificial layer 801 may define a vertical spacing between beam 407 and the top main surface of the substrate 700.

[0116] In some cases, the structural material of beam 407 may include a conductive material (e.g., a metal). In some cases, forming beam 407 may include patterning a sacrificial layer such that depositing a metal layer (or another structural material) on the patterned sacrificial layer results in the formation of at least two conductive contact ends 716a / b, 718a / b and a stop 406 beneath beam 407. For example, sacrificial layer 801 may be patterned and / or completely etched to form one or more openings, and metal may be deposited in the openings to form conductive contact ends 716a / b, 718a / b and a stop 406 beneath beam 407. In some examples, contact ends 716a / b, 718a / b and a stop 406 may be connected to the main bottom surface of beam 407. Furthermore, in some embodiments, forming beam 407 may include forming one or more pillars 402 on substrate 700 and one or more hinges 403 mechanically connecting beam 407 to pillars 402.

[0117] In some cases, the sacrificial layer 801 may be completely etched in the area where the beam 407 is mechanically supported and connected to the substrate 700 via pillars (anchors). In some embodiments, the sacrificial layer 801 may be partially etched in the area corresponding to the area forming the conductive contact ends 716a / b, 718a / b and the stop 406.

[0118] In some implementations, metal can be deposited as a blanket on the sacrificial layer 801, and conductive contact terminals 716a / b, 718a / b, stop 406, or post 402 can be formed by etching the metal outside the desired area.

[0119] In some embodiments, at least the conductive beam 407, contact ends 716a / b, 718a / b, and stop 406 may be different portions of a single structure formed on the sacrificial layer 801. In some embodiments, the two contact ends 716a / b, 718a / b may be formed above the rear contact electrode 106 and the front contact electrode 109, and the pillar 402 may be formed above the intermediate electrode 125. In some embodiments, a thin portion of the sacrificial layer may exist between the stop 406 and the substrate 700. In some examples, the stop 406 may contact but not be connected to the substrate 700, such that the stop 406 can move away from the substrate 700 without the sacrificial layer. In some embodiments, the intermediate electrode 125 may be formed below the pillar 402, wherein the pillar 402 mechanically connects the beam 407 to the substrate 700.

[0120] refer to Figure 6C The sacrificial layer 801 can be removed to release the beam 407 and the stop 406 connected to the beam 407, and to form a large gap between the beams 407, and in some cases a small gap between the stop 504 and the substrate 700. In some embodiments, the sacrificial layer 801 can be removed by a wet etching process.

[0121] It should be understood that Figures 6A to 6C An example manufacturing sequence for fabricating an asymmetric MEMS seesaw switch using a single sacrificial layer and two electroplating steps is illustrated; however, the asymmetric MEMS seesaw switch according to at least some aspects of this application can be fabricated using different numbers of sacrificial layers and / or electroplating steps, and can also be fabricated using a combination of structures and materials chosen depending on the specific requirements of the application.

[0122] Circuit breaker circuit systems including MEMS switches

[0123] In some implementations, the various MEMS switches disclosed herein include, for example, a symmetrical rocker switch 100 ( Figure 1A ) or asymmetrical seesaw switch 150 ( Figure 1B and Figures 2A to 2C ), 300 ( Figures 3A to 3C It can be used as part of a circuit breaker system to electrically connect or disconnect its two terminals. In various embodiments, the state of the seesaw switch can be controlled by a user or by electronic circuitry configured to change the state of the seesaw switch from on to off upon receiving a sensor signal indicating a fault in the circuit (e.g., excessive voltage or current).

[0124] In some embodiments, two terminals (e.g., input and output terminals) of the circuit (e.g., a circuit breaker circuit system) may be electrically connected to intermediate electrodes 120, 125 (and thus to posts 121, 123) and one of the two contact electrodes of the seesaw switch (e.g., a symmetrical seesaw switch 100 or an asymmetrical seesaw switch 150, 300). In some embodiments, a high-voltage terminal (e.g., a high-voltage input terminal) may be electrically connected to intermediate electrodes 120, 125, and a low-voltage terminal (e.g., a low-voltage output terminal) may be connected to the contact electrodes. In some of these embodiments, intermediate electrodes 120, 125 may be electrically connected to other contact electrodes of the seesaw switch, and the seesaw switch may be configured as a two-port MEMS switch. Advantageously, in some cases, such seesaw switches configured as two-port MEMS switches can be controlled with a smaller actuation voltage compared to cantilever-based MEMS switches, can be used to switch larger voltages, and may be less prone to mechanical failure.

[0125] As described above, the first contact electrode 106 of the asymmetrical rocker switch 150 (or 300) (referred to herein as the rear contact electrode) may be closer to the post 123, and the second contact electrode 109 of the asymmetrical rocker switch 150 (or 300) (referred to herein as the front contact electrode) may be further away from the post 123 (compared to the rear contact electrode). In some embodiments, when the asymmetrical rocker switch is configured as a two-port switch, the intermediate electrode 125 (and therefore the post 123) may be electrically connected to the high-voltage terminal of the circuit (e.g., a circuit breaker circuit system), and the front contact electrode 109 of the asymmetrical switch may be electrically connected to the low-voltage terminal of the circuit. However, the embodiments are not limited to this, and in some cases, when the asymmetrical rocker switch is configured as a two-port switch, the intermediate electrode 125 (and therefore the post 123) may be electrically connected to the low-voltage terminal of the circuit, and the front contact electrode 109 may be electrically connected to the high-voltage terminal of the circuit. In some such embodiments, the rear contact electrode 106 may be electrically short-circuited with the intermediate electrode 125 and the conductive post 123. Advantageously, using the front contact electrode 109 (instead of the rear contact electrode 106) and the intermediate electrode 125 of the asymmetrical rocker switch 150 as ports to control the electrical connection between the two terminals of the circuit can increase the operating voltage of the rocker switch, because in the off state, the voltage drops above the larger gap (Z2) between the second end 118 of the rocker switch 150, 300 and the front contact electrode 109.

[0126] In some implementations, multiple MEMS rocker switches may be combined to form a MEMS switch network or circuit configured to switch voltages greater than the operating voltage of individual switches. In some implementations, the MEMS switch network or circuit may include any MEMS rocker switch disclosed herein, such as MEMS rocker switch 100, 150, or 300. In some examples, the MEMS switch network or circuit may include at least one MEMS rocker switch. In some examples, as described above, at least one rocker switch may be configured as a two-port device by electrically connecting its intermediate electrode 125 to one of its contact electrodes (e.g., the rear contact electrode 106 for an asymmetric rocker switch).

[0127] In some implementations, two MEMS rocker switches (e.g., symmetrical or asymmetrical rocker switches) can be connected in series to control the electrical connection between two terminals of an electronic circuit (e.g., the two terminals of a circuit breaker), thereby increasing the upper limit of the voltage difference between the two terminals. For example, when two rocker switches (e.g., two identical rocker switches) can each disconnect at most a corresponding operating voltage (V... m When the voltage is ), they can be connected in series to disconnect up to 2V.m The voltage across each rocker switch, wherein the voltage drop does not exceed V. m It should be understood that the implementation is not limited to this, and in some implementations, the two rocker switches connected in series may be different (e.g., they may have different operating voltages), and / or more than two rocker switches may be connected in series for applications with even higher voltages.

[0128] Figure 7 This is a schematic diagram illustrating an example MEMS switching circuit (e.g., a circuit breaker) comprising a MEMS switching network formed by connecting two rocker switches in series. For example, in the illustrated embodiment, two asymmetrical rocker switches 200a, 200b (e.g., similar to...) Figure 1B The rocker switch 150 is electrically connected in series between the first terminal 102 and the second terminal 104 (e.g., the two terminals of a circuit breaker). However, the implementation is not limited to this, and in some embodiments, one or both of the two rocker switches may be symmetrical rocker switches connected in series. In some cases, rocker switches 200a, 200b may include one or more features described above with respect to asymmetrical rocker switches 150, 300. In some examples, two resistors R1, R2 may be connected in series between the first terminal 102 and the second terminal 104 to transmit the voltage V between the two terminals 102, 104. 12 The first voltage V between the first terminal 102 and the intermediate node 215 is divided. 12,1 And the second voltage V between intermediate node 215 and second terminal 104 12,2 In some implementations, R1 or R2 can be 1 to 10 kΩ, 10 to 100 kΩ, 0.1 to 1 MΩ, 1 to 50 MΩ, 50 to 100 MΩ, 100 to 500 MΩ, 500 MΩ to 1 GΩ, or have values ​​within any range formed by these values ​​or larger or smaller values.

[0129] In some embodiments, a first asymmetrical rocker switch 200a can be configured to electrically connect / disconnect the first terminal 102 and intermediate node 215, and a second asymmetrical rocker switch 200b can be configured to connect / disconnect the second terminal 104 and intermediate node 215. In various embodiments, the first resistor R1 and the second resistor R2 can be substantially equal or different. Therefore, the first rocker switch 200a and the second rocker switch 200b can have the same or different operating voltages. In one example, where R1 = R2 = R, V 12,1 = V 12,2 = V 12 / 2, and in the off state, the voltage drop across each seesaw switch can be V. 12 / 2.

[0130] In some embodiments, the first rocker switch 200a may include a first front contact electrode 206a electrically connected to a first terminal 102 and a first post 223a electrically connecting a first conductive beam 202a to a first intermediate electrode 220a, wherein the first intermediate electrode 220a is electrically connected to an intermediate node 215. In some embodiments, the second rocker switch 200b may include a second front contact electrode 206b electrically connected to a second terminal 104 and a second post 223b electrically connecting a second conductive beam 202b to a second intermediate electrode 220b, wherein the second intermediate electrode 220b is electrically connected to an intermediate node 215. Therefore, the first intermediate electrode 220a and the second intermediate electrode 220b are electrically connected to each other and to the intermediate node 215. In some cases, the first rear contact electrode and the second rear contact electrode of the first rocker switch 200a and the second rocker switch 200b may be electrically connected to each other and to the intermediate node 215, and thus electrically connected to the first intermediate electrode 220a and the second intermediate electrode 220b. In some implementations, the first rocker switch 200a and the second rocker switch 200b may share a common rear electrode 204, wherein the common rear electrode 204 may be electrically connected to the intermediate node 215 and the first intermediate electrode 220a and the second intermediate electrode 220b.

[0131] In some embodiments, the first pair of control electrodes 208a, 210a can be configured to control the first beam 202a of the first rocker switch 200a, thereby changing the state of the first rocker switch 200a, and the second pair of control electrodes 208b, 210b can be configured to control the second first beam 202b of the second rocker switch 200b, thereby changing the state of the second rocker switch 200b. In various embodiments, the first rocker switch 200a and the second rocker switch 200b can be controlled by the same or different control signals and the resulting actuation voltage.

[0132] In some embodiments, the front control electrodes 208a, 208b of the first rocker switch 200a and the second rocker switch 200b can be electrically connected and receive a first common actuation voltage, and the rear control electrodes 210a, 210b of the first rocker switch 200a and the second rocker switch 200b can be electrically connected and receive a second common actuation voltage. Therefore, in these embodiments, the first rocker switch 200a and the second rocker switch 200b can be simultaneously in an on or off state. In some cases, when both rocker switches 200a and 200b are in the on state, an electrical path can be established between the first terminal 102 and the second terminal 104 through the first beam 202a, the first post 223a, the first intermediate electrode 220a, the second intermediate electrode 220b, the second post 223b, and the second beam 202b. In some embodiments, when both switches are in the off state, the electrical path between the first terminal 102 and the second terminal 104 can be electrically disconnected. In some such cases, the disconnection gap between the first front contact electrode 206a and the second front contact electrode 206b and the corresponding front ends of the first beam 202a and the second beam 202b can be configured to maintain electrical isolation under voltage drops substantially equal to V×R1 / (R1+R2) and V×R2 / (R1+R2), respectively, where V is the voltage difference between the first terminal 206a and the second terminal 206b. Therefore, in some embodiments, L2 / L1, L1, L2, L (=L1+L2), and the disconnection gap can be different for the first rocker switch 200a and the second rocker switch 200b. Advantageously, by connecting the front contact electrodes 206a, 206b of the two exemplified asymmetrical seesaw switches 200a, 200b to the first terminal 102 and the second terminal 104, a larger voltage can be isolated relative to a similar symmetrical switch having the same beam length, because the gap formed above the front contact electrode in the off state (e.g., the off state gap) is larger than the gap formed above the front contact electrode of the symmetrical seesaw switch.

[0133] As disclosed herein, in a manner similar to that discussed above, within the context of MEMS switching circuits, a MEMS switch (such as an asymmetric rocker switch) can be said to be activated when the end of the conductive beam further away from the conductive post is lifted and not in electrical contact with the corresponding contact electrode. For example, as Figure 7The illustrated asymmetric rocker switches 200a and 200b can be described as being in an active state, wherein the front contact electrodes 206a and 206b and the second ends of beam 107 further away from the posts 223a and 223b are electrically disconnected from each other. Conversely, in the context of a MEMS switching circuit, a MEMS switch (such as an asymmetric rocker switch) can be described as being deactivated when the end of the conductive beam closer to the conductive post is lifted and not in electrical contact with the corresponding contact electrode. For example, the asymmetric rocker switches 200a and 200b can be described as being in a deactivated state when the rear contact electrode 204 and the first ends of beam 107 closer to the posts 223a and 223b are electrically disconnected from each other.

[0134] In some implementations, two or more MEMS switch networks may be connected in parallel, allowing a larger current to flow between the first terminal 102 and the second terminal 104. In some examples, at least one MEMS switch network may include... Figure 7 The configuration shown. Figure 8 An example circuit breaker 200 or MEMS switch network is schematically illustrated, including multiple MEMS rocker switches configured to connect / disconnect terminals 102, 104, and allowing high-current and high-voltage connections between these terminals. As described above, the rocker switches in the circuit breaker 200 can be symmetrical or asymmetrical. In some cases, the circuit breaker 200 may include N pairs of rocker switches connected in parallel, wherein a single pair comprises two rocker switches connected in series between the first terminal 102 and the second terminal 104 (e.g., Figure 7 The MEMS switch network shown is similar to... Figure 7 The configuration shown uses two resistors R1 and R2 connected in series between the first terminal 102 and the second terminal 104 to transmit the voltage V between the two terminals 102 and 104. 12 The voltage divider is the first voltage V between the first terminal 102 and the intermediate node 215. 12,1 And the second voltage V between intermediate node 215 and second terminal 104 12,2 As an example, R1 = R2 = R, V 12,1 =V 12,2 = V 12 / 2, and in the off state, the voltage drop across each seesaw switch can be V. 12 / 2.

[0135] Therefore, in some cases, the operating voltage of the first seesaw switches 252-1, 252-2, ..., 252-n in each pair can be equal to or less than V. 12,1Furthermore, the operating voltage of each pair of second seesaw switches 254-1, 254-2, ..., 254-n can be equal to or less than V. 12,21 .

[0136] In some examples, when circuit breaker 200 is in the open state, all rocker switches 252-1, 252-2, ..., 252-n and 254-1, 254-2, ..., 254-n can be in the open state, and the first terminal 102 can be electrically disconnected from the second terminal 104. In some examples, when circuit breaker 200 is in the closed state, all rocker switches 252-1, 252-2, ..., 252-n and 254-1, 254-2, ..., 254-n can be in the closed state, and the first terminal 102 can be electrically connected to the second terminal 104.

[0137] In various embodiments, the two rocker switches in a pair of switches (e.g., 252-1 and 254-1, 252-2 and 254-2, ...) in circuit breaker 200 may be substantially the same or different. In various embodiments, at least one rocker switch in a pair of switches (e.g., 252-1 and 254-1, 252-2 and 254-2, ...) in circuit breaker 200 may be asymmetrical rocker switches (e.g., rocker switches 150 or 300). In various embodiments, at least two pairs of switches in circuit breaker 200 may be substantially the same.

[0138] In some cases, all the rocker switches 252-1, 252-2, ..., 252-n and 254-1, 254-2, ..., 254-n of the circuit breaker 200 may be substantially identical. In some such cases, the upper limit of the voltage difference between the first terminal 102 and the second terminal 104 may be substantially equal to twice the operating voltage of the individual rocker switch, and the upper limit of the current flowing between the first terminal 102 and the second terminal 104 may be substantially equal to N times the operating current of the individual rocker switch, wherein the operating current of the individual rocker switch is the maximum current that can pass through the rocker switch in the ON state without damaging the beam, column, hinge, contact end of the beam and / or the front contact electrode of the rocker switch.

[0139] In some implementations, when the potentials of the control electrode and intermediate electrode of the seesaw switch are controlled relative to a common reference voltage (e.g., ground potential), the switching voltage (V) s It can be based on the voltage applied between the intermediate electrode and the corresponding contact electrode (e.g., the operating voltage V of a seesaw switch). m And change. For example, when a rocker switch is used to switch on a circuit with V m When an electrical connection is provided between the two terminals of the potential difference, Vs It can be basically equal to V m + V0, where V0 is the switching voltage (or actuation voltage) of the isolated rocker switch (e.g., when no voltage is applied between the intermediate electrode and one of the contact electrodes). Therefore, when the rocker switch is used for high-voltage switching (e.g., when V...), m For voltages greater than 100 volts, 300 volts, or 500 volts, a larger V may be required. s This changes the state of the seesaw switch (from on to off, and vice versa). Furthermore, as the voltage applied across the seesaw switch changes (e.g., the voltage supplied to the first terminal 102 and the second terminal 104), a control voltage (e.g., the switching voltage V) is supplied to the control electrode to activate or deactivate the seesaw switch. s It can vary with the applied voltage (e.g., vary proportionally).

[0140] In various implementations, V0 can be 20 to 40 volts, 40 to 60 volts, 60 to 80 volts, 80 to 100 volts, or any range formed by these values ​​or values ​​greater or less.

[0141] In various implementations, the number (N) of a pair of MEMS seesaw switches connected in parallel can be 5 to 10, 10 to 20, 20 to 30, 30 to 40, 40 to 50, 50 to 60, 60 to 80, 80 to 100, or any range of these values ​​or values ​​greater or less.

[0142] In some cases, a standalone MEMS rocker switch (e.g., an asymmetric MEMS rocker switch) may have an operating voltage V of 20 to 40 volts, 40 to 60 volts, 60 to 80 volts, 80 to 100 volts, 100 to 150 volts, 150 to 200 volts, or any range of these values ​​or values ​​greater or less. m .

[0143] In some cases, the upper limit of the current through a single MEMS rocker switch can be 10 to 40 mA, 40 to 60 mA, 60 to 80 mA, 80 to 100 mA, 100 to 150 mA, 150 to 200 mA, or any range of values ​​formed by these values ​​or larger or smaller.

[0144] In some cases, the characteristics and number of individual MEMS rocker switches used in circuit breaker 200 can be selected to allow a voltage difference between the first terminal 102 and the second terminal 103 greater than 100 volts, 200 volts, 300 volts, 400 volts, 500 volts or greater, and a current through circuit breaker 200 (when all MEMS switches are in the ON state) greater than 0.5 amps, 1 amp, 2 amps, 3 amps, 4 amps, 5 amps, 8 amps, 10 amps or greater.

[0145] For example, when the V of the individual rocker switch of circuit breaker 200 m With current limits of 65 mA and 200 volts respectively and N=60, circuit breaker 200 can be used to switch voltages of up to 400 volts and currents of up to 4 amps.

[0146] In some implementations, the circuit breaker 200 can be fabricated on a single chip by using N rows of MEMS switch pairs formed on a common substrate and connected in parallel by two wires formed on the common substrate. In some cases, in order to limit the voltage across each MEMS switch (e.g., each asymmetric MEMS seesaw switch) to a corresponding V... m A hierarchical network, such as a voltage divider, can be formed on the substrate to divide the voltage applied between the first terminal and the second terminal. In other words, resistors R1 and R2 in FIG200 may include a hierarchical network (e.g., multiple resistors or resistive electrical paths configured to distribute the applied voltage according to the operating voltage of individual MEMS switches).

[0147] Figure 9A A rocker switch 900 is schematically illustrated, configured to electrically connect / disconnect the front contact electrode 109 to an input voltage source 902, which is configured to provide a voltage relative to a reference voltage (V). G The voltage V in In some cases, when the rocker switch 900 is in the ON state, the conductive path between the input voltage source 902 and the front contact electrode 109 can be established via the post 123, the beam 107, and the electrical connection between the post 123 and the front contact electrode 109. In some embodiments, to change the state of the rocker switch 900 from the OFF state to the ON state, the front control electrode 110 can be connected to a control voltage source 904, which is configured to provide the same reference voltage (V) relative to that used by the input voltage source 902. G The first control voltage V) C1 (For example, greater than or equal to the switching voltage V) s In some such cases, when V C1When V is constant, the resistance of the conductive path can change with V. in It changes with the change (e.g., when V) in (When time-dependent). In some cases, when V in When V changes (e.g., when V changes) in When time-dependent), V s This can vary because the potential difference between beam 107 and control electrode 110 depends on the voltage applied to beam 107 (e.g., V). in In other words, in Figure 9A In the configuration shown, V s It can be V in A function of time. In some examples, this is a resistance that varies with time or a voltage that varies with time. s This may adversely affect the performance of electronic circuits (e.g., circuit breakers) that use a seesaw switch for voltage and / or current switching. In various embodiments, the input voltage value provided by the input voltage source 902 can be 10 to 100 volts, 100 to 300 volts, 300 to 500 volts, 500 to 1000 volts, or have a voltage value within a range defined by any one of these values ​​or a value greater or less. In various embodiments, the current value provided by the input voltage source 902 can be 1 to 5 amps, 5 to 10 amps, 10 to 20 amps, 20 to 40 amps, or have a current value within a range defined by any one of these values ​​or a value greater or less.

[0148] The inventors have discovered that by referencing the voltage of the beam (e.g., V), in ) provides control voltage, switching voltage (V) s It can maintain a voltage V that is substantially independent of the voltage applied between the terminals of the corresponding electronic circuit (e.g., a circuit breaker circuit system). in , so that when V in When the voltage changes, the control voltage can remain constant.

[0149] Figure 9B A rocker switch 901 is schematically illustrated, configured to electrically connect / disconnect the front contact electrode 109 to an input voltage source 902, which is configured to provide a voltage relative to a first reference voltage (V). G1 The voltage V in In some implementations, in order to change the state of the seesaw switch 901 from an off state to an on state, the front control electrode 110 may be connected to a control voltage source 906, which is configured to provide a voltage relative to a second reference voltage (V). G2 The second control voltage V) C2 In some cases, V G2It can be the voltage supplied to beam 107 (e.g., V). in For example, V G2 It can be basically equal to V in - V G1 Furthermore, the control voltage source 906 can provide voltages that are essentially independent of V. in V C2 = V s = V0 (where V0 is the switching or actuation voltage of the isolated rocker switch) to actuate the rocker switch from the off state to the on state. In some embodiments, the control voltage source 906 may include electronic circuitry configured to receive a control signal from the control circuitry and actuate it substantially equal to V0. s The second control voltage V C2 Provided to the front control electrode 110. As described above, V s Sufficient force may be applied between the second ends 118 of the beam 107 to establish a voltage for an electrical contact between the front contact electrode 109 and the second ends 118, the electrical contact having a resistance below a threshold.

[0150] Figure 9C This schematically illustrates the constant V supplied by voltage sources 902 and 904 to rocker switches 900 and 901, respectively. C1 =V C2 =V C The resistance of the conductive path established between the column 123 and the front contact electrode 109 by the seesaw switch 900 (solid line) and the seesaw switch 901 (dashed line) varies with the voltage (V) supplied to the beam 107. in A graph showing the change in V. In some cases, when V... in When the voltage is close to zero, for both rocker switches 900 and 901, the voltage difference between beam 107 and the front control electrode 110 can be approximately equal to V. s This results in a sufficiently low resistance (e.g., less than 50 ohms) in the conductive path between the front contact electrode 109 and the post 123. In some cases, when V in When increased, the voltage difference between the beam 107 of the rocker switch 900 and the front control electrode 110 can be reduced to below V. s (Because V) C1 and V in Relative to common reference V G (Applied), while the voltage difference between the beam 107 of the seesaw switch 901 and the front control electrode 110 can remain substantially equal to V. s (Because V) C2 and V in Relative to different reference voltages V G1 and V G2(Applied). In some cases, the resistance of the electrical connection between the second end 118 of beam 107 and the front contact electrode 109 can be proportional to the electrostatic force applied to beam 107, and the electrostatic force applied to beam 101 can be proportional to the square of the voltage difference between beam 107 and control electrode 110. Therefore, when V in When increased, the resistance of the conductive path established between the front contact electrode 109 and the post 123 can be increased to a value higher than the expected value of the rocker switch 900. Figure 9C (solid line in the middle), and remains constant for rocker switch 901 ( Figure 9C (The dashed line in the middle).

[0151] Advantageously, the actuation configuration of the rocker switch 901 can maintain V s The resistance is substantially constant (e.g., close to or equal to V0), and when the switch is on, a constant Vc close to or substantially equal to Vs can be used to keep the resistance of the conductive path between post 123 and the front contact electrode 109 below a threshold value, which is substantially independent of Vs. in The magnitude and / or time variation.

[0152] It should be understood that Figure 9B The illustrated electro-actuated configuration (which causes a switching voltage V supplied to the control electrode to be applied) s Basically independent of V in It can be used to actuate both symmetrical and asymmetrical MEMS rocker switches, as well as cantilever-based MEMS switches.

[0153] Circuit breaker circuit system with isolation circuit

[0154] Figure 10 An example switching circuit 1000 (e.g., a circuit breaker circuit system) is schematically illustrated, which includes a MEMS switch 1002 and a control circuit 1001 configured to, according to the above description... Figure 9B The described electrical configuration is based on control signal 1011 and input voltage V provided to MEMS switch 1002 by input voltage source 902. in This controls the state of the MEMS switch 1002. In some implementations, the amplitude of the control voltage Vc supplied to the MEMS switch 1002 can be substantially independent of V. in In some cases, control signal 1011 may include digital control data. In some examples, control signal 1011 may include a deactivation signal indicating an on state or an activation signal indicating a off state.

[0155] In various implementations, the MEMS switch 1002 may include a rocker switch (e.g., rocker switch 100, 150, or 300) or a cantilever-based switch.

[0156] In the illustrated example, the MEMS switch 1002 includes, but is not limited to, an asymmetric switch having a rear contact electrode 106 electrically connected to a first terminal 102 (e.g., an input terminal), a front contact electrode 110 electrically connected to a second terminal 104 (e.g., an output terminal), an intermediate electrode 125 electrically connected to the rear contact electrode 106, and a beam 107, wherein the beam 107 is electrically connected to the intermediate electrode 125 by conductive posts anchoring the beam 107 to a substrate, as described herein. In some embodiments, the first terminal 102 may be electrically connected to an input voltage source 902 relative to a first reference voltage (V). G1 (e.g., ground potential) provides an input voltage V to the first terminal 102. in Furthermore, the second terminal 104 can be electrically connected to the first reference voltage (or another reference voltage) via resistor R3.

[0157] In some embodiments, the seesaw switch 1002 may include a front control electrode 110 and a rear control electrode 106, the front control electrode 110 and the rear control electrode 106 being configured to receive a front control voltage V from the control circuit 1001. Cf and subsequent control voltage V Cb The position of the control beam 107 is then controlled (and thus the state of the MEMS switch 1002 is controlled). In some examples, the control circuit 1001 can be configured to receive V from the input voltage source 902. in It receives control signal 1011 from the electronic circuit and actuation voltage V from the actuation voltage source. DD And using V DD And based on control signal 1011 and V in To generate the pre-control voltage V Cf and subsequent control voltage V CbIn some cases, control circuitry 1001 may generate a deactivation voltage for deactivating MEMS switch 1002 from an off state to an on state, or an activation voltage for activating MEMS switch 1002 from an on state to an off state. In some cases, activation voltage and deactivation voltage may be collectively referred to as actuation voltage. In some examples, deactivation voltage may include providing a pre-control voltage and a post-control voltage configured to electromechanically couple beam 107 to front contact electrode 109 and decouple it from rear contact electrode 106. In some examples, activation voltage may include providing a pre-control voltage and a post-control voltage configured to electromechanically couple beam 107 to rear contact electrode 106 and decouple it from front contact electrode 109. In some cases, deactivation voltage may include a voltage provided to front control electrode 110, and activation voltage may include a voltage provided to rear control electrode 108.

[0158] In some cases, the control circuit 1001 can control V DD Amplify (e.g., using a DC-to-DC converter) to a value relative to V. in The switching voltage V of the rocker switch 1002 s And in response to receiving a control signal 1011 indicating an on (or off) state, generate a signal having a value substantially equal to V. s + V in The amplitude of V Cf (or V) Cb In such cases, the control circuit 1001 may include at least a first isolator 1006, which will be activated by the actuation source 1010 relative to the initial reference signal V. G0 V provided DD Electrically isolated from the electronic circuitry of control circuit 1001 (e.g., a voltage converter). In some examples, isolator 1006 may allow V... DD Magnified relative to V in A fixed voltage (e.g., V) s In some embodiments, control circuit 1001 may include a second isolator 1008 that electrically isolates control signal 1011 from the electronic circuitry of control circuit 1001 (e.g., driver circuitry). Advantageously, by isolating the voltage amplification and control circuitry from the actuation source 1010 and the source of control signal 1011, control circuit 1001 can effectively amplify V... Cf and V Cb From self-bootstrapping to V in This causes the voltage of the corresponding control electrode (e.g., the front control electrode 110 in the on state and the rear control electrode 108 in the off state) to be greater than that determined by V. sVoltage applied to beam 107.

[0159] In some embodiments, the control circuit 1001 may include actuation and control circuitry 1004, a first isolator 1006, and a second isolator 1008. In some embodiments, the actuation and control circuitry 1004 may include a DC-to-DC converter 1004a and a driver 1004b. In some cases, the first isolator 1006 may be configured to receive an actuation voltage V from the actuation source 1010. DD It provides an isolated actuation voltage V to the DC-to-DC converter 1004a. DD-IS In some cases, the second isolator 1008 can be configured to receive control signal voltage V. CS The control signal 1011 is provided to the driver 1004b, and an isolated control signal voltage V is supplied. CS-IS In some implementations, the DC-to-DC converter 1004a and the driver 1004b can be configured to receive an input voltage V from the input voltage source 902. in And using V in This serves as the operating reference voltage supplied to the reference voltage port / terminal 1012 of the actuation and control circuit 1004. In some cases, the voltage connected to port / terminal 1012 may be referred to as the second reference voltage V. G2 The DC-to-DC converter 1004a and driver 1004b can be relative to the second reference voltage V. G2 Operation. In some implementations, the DC-to-DC converter 1004a can be configured to amplify the isolated actuation voltage V via a voltage amplification factor M. DD-IS To produce relative to V G2 (=V) in It is basically equal to M×V DD-IS And therefore relative to V G1 Basically equal to M×V DD-IS + V in The control voltage. In some implementations, M×V DD-IS It can be basically equal to or greater than V s = V0. In some implementations, driver 1004b can be configured to receive an amplified voltage from DC-to-DC converter 1004a, based on an isolated control signal voltage V received from second isolator 1008. Cs-IS The pre-control voltage V Cf Provided to the front control electrode 110 or the rear control electrode 108. For example, when V CS-IS When the indicator is off, the driver 1004b can use the amplified voltage as V. Cb (= M×V) DD-IS + V inThis is provided to the rear control electrode 108 to electrically disconnect the beam 107 from the front contact electrode 109. Similarly, when V... CS-IS When the indicator is on, the driver 1004b can use the amplified voltage as V. Cf (= M×V) DD-IS +V in A current is supplied to the front control electrode 110 to electrically connect the beam 107 to the front contact electrode 109. In some embodiments, when V... CS-IS When the indicator is off, V Cf It can be relative to V G1 Basically equal to V in (or relative to V) G2 (is zero), and when V CS-IS When indicating the on state, V Cb It can be relative to V G1 Basically equal to V in (or relative to V) G2 (It is zero). Therefore, the first isolator 1006 and the second isolator 1008 are used, and the second reference voltage V is passed through. G2 Set to V in The control circuit 1001 can control V Cf V Cb From self-bootstrapping to V in And based on V CS Control them.

[0160] In some embodiments, in addition to the first isolator 1006 and the second isolator 1008, the control circuit 1001 may include a third isolator 1022, which is configured to receive sensor signals from the sensor 1020 and output an isolated sensor signal 1024. In some embodiments, the sensor 1020 may include a temperature sensor, a current sensor, or other types of sensors that generate sensor signals indicating operating conditions or parameters of the seesaw switch 1002 or an electrical circuit system (e.g., a circuit breaker) controlled by the seesaw switch 1002. In some cases, the isolated sensor signal 1024 output by the control circuit 1001 may be used by a signal processing circuit to control the control signal 1011 and / or the actuation voltage source 1010. In some embodiments, the control circuit 1001 may include a readout circuit (not shown) configured to receive sensor signals from the sensor 1020 and provide the processed sensor signals to the third isolator 1022. In some examples, the sensor signal may include an analog signal, the readout circuitry may include an analog-to-digital converter (ADC), and the processed sensor signal may include a digital signal.

[0161] Figure 11AAnother example switching circuit 1100 (e.g., a circuit breaker circuit system) is schematically illustrated, which includes a control circuit 1101 and a MEMS switching network 1102 comprising two or more MEMS switches. In various embodiments, the MEMS switching network 1102 may include any of the following: a rocker switch 100, 150, 300, a cantilever-based switch, or a combination thereof. For illustrative purposes, the MEMS switching network 1102 includes two rocker switches (e.g., each similar to a rocker switch 100, 150, or 300) connected in series between an input terminal 102 and an output terminal 104 of electronic circuitry (e.g., electronic circuitry protected / controlled by the switching circuit 1100 formed by the control circuit 1101 and the MEMS switching network 1102). In some embodiments, the MEMS switching network 1102 may include the components described above. Figure 7 The MEMS switching circuit shown describes one or more features. In some embodiments, control circuit 1101 may include features similar to those described above regarding control circuit 1001 ( Figure 10 The features described herein may be one or more of those features, and for the sake of brevity, their details may not be repeated in this article.

[0162] In some embodiments, the control circuit 1101 may be configured to provide a front control voltage V to the first front control electrode 208a and the second front control electrode 208b of the first rocker switch and the second rocker switch of the switching network 1102. Cf And provides a post-control voltage V to the first post-control electrode 210a and the second post-control electrode 210b of the first rocker switch and the second rocker switch of the switching network 1102. Cb In some implementations, the control circuit 1101 may be configured to receive a midpoint voltage V from a common rear contact electrode 204 shared between two seesaw switches in the MEMS switch network 1102. mid In some implementations, input terminal 102 can be connected to input voltage source 902, and output terminal 104 can be connected to a first reference voltage V via resistor R3. G1For example, ground voltage. In some embodiments, the first front contact electrode 206a of the first rocker switch can be connected to the input terminal 102, the second front contact electrode 206b of the second rocker switch can be connected to the output terminal 104, and the two rocker switches can share a common rear contact electrode 204. In some examples, a first resistor can be connected in parallel with the first rocker switch between the first front contact electrode 206a and the common rear contact electrode 204, and a second resistor can be connected in parallel with the second rocker switch between the common rear contact electrode 204 and the second front contact electrode 206b. In some embodiments, the first resistor and the second resistor can have substantially equal resistances, thereby equally dividing the input voltage V between the first rocker switch and the second rocker switch. in In some such embodiments, the midpoint voltage V of the common rear contact electrode 204 mid It can be basically equal to (V) in -V G1 ) / 2. In some embodiments, the common rear contact electrode 204 of the first and second rocker switches, as well as the first intermediate electrode 220a and the second intermediate electrode 220b, may be electrically connected (e.g., short-circuited). In some embodiments, the first resistor and the second resistor may be different, and the midpoint voltage V of the common rear contact electrode 204 may be... mid It can be different from (V) in -V G1 ) / 2. In some implementations, the MEMS switches of the MEMS switch network 1102 may be different (e.g., having different switching voltages, different off-state gaps, operating voltages, etc.).

[0163] In some embodiments, the control circuit 1101 may include an isolator circuit 1106 and an actuation and control circuit 1104, wherein the isolator circuit 1106 is configured to receive one or more voltages from an external circuit and provide isolated voltages to the actuation and control circuit 1104. In some embodiments, the actuation and control circuit 1104 may be configured to receive a midpoint voltage V from a common rear contact electrode 204. mid And using V mid The isolated voltage received from isolator circuit 1106 is used to generate the pre-control voltage V. Cf and subsequent control voltage V Cb This makes V Cf V Cb Compared to V mid And thus generated relative to the voltage of the beams of the first and second seesaw switches connected to the respective first intermediate electrode 220a and second intermediate electrode 220b.

[0164] In some embodiments, the isolator circuit 1106 may include a first isolator 1106a, which is configured relative to an initial reference signal V. G0 Receives actuation voltage V from actuation source 1010 DD And provides an isolated actuation voltage V to the DC-to-DC converter 1104a of the actuation and control circuit 1104. DD-IS and relative to the isolation reference voltage V G-IS The isolated reference signal V G-IS In some implementations, the control circuit 1104 can be configured to use an isolated actuation voltage V. DD-IS To provide activation or deactivation voltage to the control electrodes of MEMS switch network 1102, so as to electrically connect and disconnect input terminal 102 and output terminal 104.

[0165] In some embodiments, the isolator circuit 1106 may include a second isolator 1106b, which is configured to receive a control signal 1011 from the microcontroller 1110 and provide a reference voltage V relative to the isolation to the first driver 1104b and the second driver 1104c of the actuation and control circuit 1104. G-IS isolated control signal voltage V CS-IS .

[0166] In some implementations, the DC-to-DC converter 1104a, the first driver 1104b, and the second driver 1104c can be configured to use V DD-IS and V CS-IS To generate relative to V mid V Cf and V Cb The V mid The reference operating voltage can be provided to the actuation and control circuit 1104, for example, by electrically connecting the common rear contact electrode 204 to the reference voltage port / terminal 1112 of the actuation and control circuit 1104.

[0167] In some implementations, the DC-to-DC converter 1104a can be configured to amplify the isolated control voltage V via a voltage amplification factor M. DD-IS To produce relative to V G2 (=V) in It is basically equal to M×V DD-IS (or relative to V) G1 Equal to M×V DD-IS + V in The control voltage, where M×V DD-ISIt can be essentially equal to V0. In some implementations, the first driver 1104b and the second driver 1104c can be configured to receive the amplified voltage from the DC-to-DC converter 1104a, and based on the isolated control signal voltage V received from the second isolator 1106b. CS-IS A control voltage V is provided to the first front control electrode 208a and the second front control electrode 208b. Cf Alternatively, a control voltage V can be provided to the first rear control electrode 210a and the second rear control electrode 210b. Cb For example, when V CS-IS When the indicator is in the off state, the first driver 1104b can use the amplified voltage as V. Cb (= M×V) DD-IS + V in The first rear control electrode 210a and the second rear control electrode 210b are provided to the rear control electrodes to electrically disconnect the corresponding beam from the first front contact electrode 206a and the second front contact electrode 206b. Similarly, when V CS-IS When the indicator is on, the second driver 1004c can use the amplified voltage as V. Cf (= M×V) DD-IS + V in The first front control electrode 208a and the second front control electrode 208b are provided to electrically connect the respective beams to the first front contact electrode 206a and the second front contact electrode 206b.

[0168] In some embodiments, in addition to the first isolator 1106a and the second isolator 1106b, the control circuit 1101 may include a third isolator 1106c, which is configured to receive sensor signals from the sensor 1120 and output isolated sensor signals. In some embodiments, the sensor 1120 may include a temperature sensor, a current sensor, or other types of sensors that can generate sensor signals indicating operating conditions of the seesaw switch network 1102. In some cases, the isolated sensor signals output by the control circuit 1101 may be used by the microcontroller 1110 to control the control signal 1011 and / or the actuation voltage source 1010. Additionally or alternatively, the third isolator 1106c may be configured to receive data signals (e.g., from the microcontroller 1110 and provide isolated data signals to one or more sensors, the control circuit 1104, or another circuit directly or indirectly connected to the MEMS switch network).

[0169] In various embodiments, the first isolator 1006, the second isolator 1008, and the third isolator 1022 of the switching circuit 1000 ( Figure 10The first isolator 1106a, the second isolator 1106b, and the third isolator 1106c (Figure 11) of the switching circuit 1100 may include galvanic isolators (e.g., capacitive, inductive, radial, optical, acoustic). In some cases, the first isolator 1006, the second isolator 1008, and the third isolator 1022 ( Figure 10 At least one of the first isolator 1106a, the second isolator 1106b, and the third isolator 1106c may include a transformer (e.g., an inductive isolator including magnetically coupled coils). In some examples, the transformer may include an integrated circuit including two coils (e.g., helical coils) formed (e.g., monolithically formed) on opposite sides of a core layer, the two coils being magnetically coupled through the core layer. In some examples, the transformer may include an integrated circuit including laterally isolated primary and secondary coils wound around a winding axis parallel to the main surface of the core layer formed on a substrate. In some cases, the first isolator 1006, the second isolator 1008, and the third isolator 1022 ( Figure 10 Or at least one of the first isolator 1106a, the second isolator 1106b, and the third isolator 1106c may not include a transformer. In some such cases, one of the isolators may include a coupler (isolation) circuit configured to provide a bidirectional isolated electrical connection.

[0170] Figure 11B The illustration shows the provision provided Figure 10 and Figure 11A The example control signal voltage (e.g., isolated control signal voltage V) of the seesaw switch or seesaw switch network shown is an example. CS-IS ) and the preceding control voltage V Cf and subsequent control voltage V Cb The time change, which describes V CS-IS With V Cf and V Cb The timing is aligned between them. In some implementations, at time t0, V CS-IS It can be zero or close to zero (e.g., logic level 0), V Cf It can be close to or essentially equal to V. in (or V) mid ), V Cb It can be close to or essentially equal to V. in +V0 (or V) mid +V0), and the rocker switch (or switch network) can be in the off state. At time t on At that time, V CS-IS Transform to the maximum value V CSm(For example, logic level 1) and triggers control circuit 1004 (or 1104) to generate the preceding control voltage V. Cf and subsequent control voltage V Cb This is used to change the state of a rocker switch (or switch network) from an off state to an on state. In some embodiments, to change the state of the rocker switch (or switch network) from an off state to an on state, control circuit 1004 (or 1104) can reduce V. Cb And increase V Cf This disconnects beam 107 (or beams 202a, 202b) from the rear contact pad (or contact pad) and connects it to the rear contact pad (front contact pad). In some such embodiments, V is used to change the state of the rocker switch (or switch network) between an on and off state. Cb and V Cf It can change in opposite directions with the same slope (or two different slopes). Furthermore, in some cases, V... Cb or V Cf It is possible to not start from V Ref Increase (e.g., V) in or V mid ), until V Cb and VC f The other one in the middle decreases to V Ref .

[0171] exist Figure 11B In the example shown, in response to V CS-IS The change turns on the seesaw switch (or switch network) at time t1 (which can be relative to t). on (Delay) V Cb The slope decreases with a gradient of 1130a until V is reached (or nearly reached) at time t2. Ref And at time t3 (which may be delayed relative to t2), V Cf The slope increases with 1131a until it reaches (or approaches) V at time t4. Cm = V Ref +V0. Similarly, as Figure 11B As shown, in order to respond to at time t off Time V CS-IS From V CSm The transition to zero (or near zero) disconnects the seesaw switch (or switch network) at time t5 (which can be relative to t). off (Delay) V Cf With a slope of 1130b from V Cm Decrease until V reaches (or approaches) at time t6. Ref And at time t7 (which may be delayed relative to t6), V CbWith a slope of 1131b from V Ref Increase until it reaches (or approaches) V at time t8. Cm = V Ref + V0. In some implementations, slopes 1130a, 1131a, 1130b, and 1131b may be substantially equal. In some implementations, the differences between t2 and t1, t4 and t3, t6 and t5, and / or t8 and t7 may be 10 to 30 microseconds, 30 to 50 microseconds, 50 to 80 microseconds, 80 to 100 microseconds, or any range formed by these values ​​or values ​​greater or less. In some examples, V CSm It can be roughly equal to 3 volts. In some examples, V0 (=V Cm - V Ref It can be roughly equal to 80 volts.

[0172] In some examples, when the rocker switch is activated from the off state to the on state, the current flowing through the rocker switch can decrease within a time period of 0.1 to 1 microsecond, 1 to 10 microseconds, 10 to 20 microseconds, 20 to 30 microseconds, 30 to 40 microseconds, 40 to 50 microseconds, 50 to 60 microseconds, 60 to 80 microseconds, or any range of values ​​larger or smaller than these.

[0173] In some examples, when the rocker switch is deactivated from the ON state to the OFF state, the current flowing through the rocker switch can increase within a time period of 1 to 5 microseconds, 5 to 10 microseconds, 10 to 30 microseconds, 30 to 50 microseconds, 50 to 70 microseconds, 70 to 90 microseconds, 90 to 100 microseconds, 100 to 150 microseconds, 150 to 200 microseconds, or any range of values ​​larger or smaller than these.

[0174] In various embodiments, the first isolator 1006, the second isolator 1008, and the third isolator 1022 of the switching circuit 1000 ( Figure 10 The first isolator 1106a, the second isolator 1106b, and the third isolator 1106c (FIG. 11) of the switching circuit 1100 may include magnetic isolators or other types of isolators. In some cases, the magnetic isolator may include two magnetically coupled coils, and in some cases, it includes electronic circuitry configured to convert DC voltage to AC voltage and / or convert AC voltage to DC voltage, regulating the output voltage. In some embodiments, the first isolator 1006, the second isolator 1008, and the third isolator 1022 of the switching circuit 1000 (FIG. 1106a, 1106b, and 1106c) may include magnetic isolators or other types of isolators. Figure 10The first isolator 1106a, the second isolator 1106b, and the third isolator 1106c (FIG. 11) of the switching circuit 1100 may include other types of isolators, such as field-based isolators, such as capacitive isolators that include discrete DC high-voltage capacitors.

[0175] In various embodiments, the first isolator 1006, the second isolator 1008, and the third isolator 1022 of the switching circuit 1000 ( Figure 10 Alternatively, the first isolator 1106a, the second isolator 1106b, and the third isolator 1106c (FIG. 11) of the switching circuit 1100 can be fabricated on a separate substrate. In some examples, the first isolator 1006, the second isolator 1008, and the third isolator 1022 of the switching circuit 1000 (FIG. 1106a, 1106b, and 1106c) can be fabricated on a separate substrate. Figure 10 At least two of the isolators in the first isolator 1106a, the second isolator 1106b, and the third isolator 1106c (FIG. 11) of the switching circuit 1100 can be fabricated on a common substrate.

[0176] In some implementations, the isolator circuit 1106 may include an integrated circuit packaged in a single package. Figure 12A Examples of such isolator circuits are schematically illustrated. In some such embodiments, the first isolator 1106a, the second isolator 1106b, and the third isolator 1106c (FIG. 11) of the isolator circuit 1106 may include an integrated transformer formed on a common substrate or a separate substrate and included in a single package 1200. Figure 12A As illustrated in the illustrations, in some examples, the individual integrated transformer of the isolator circuit 1106 may include a pair of helical conductive coils 1206 formed on the top and bottom surfaces of a core layer 1204 formed on a substrate 1208. The materials and geometries used for the substrate, core layer, and coils can be selected based on the specific requirements of the application. In some embodiments, the laminated structure may be integrated with an integrated circuit to provide specific performance and / or functionality.

[0177] Figure 12B Another example of a packaged integrated isolator circuit 1210 is schematically illustrated. This integrated isolator circuit 1210 includes a transformer chip 1210a and a transformer circuit system comprising two integrated electronic circuit chips 1210b and 1210c. The transformer chip 1210a, the first electronic circuit chip 1210b, and the second electronic circuit chip 1210c are electrically connected to each other via multiple wire bonds and electrically connected to conductive pins of the package. In some examples, the first electronic circuit chip 1210b may include a DC-to-AC converter configured to convert one or more input DC voltages (e.g., V0) into AC voltages.CS and / or V DD The AC voltage induced in the transformer's secondary coil is converted to an AC voltage, which can be magnetically coupled from the primary coil of the transformer formed on the transformer chip 1210a to the secondary coil. In some examples, the second electronic circuit chip 1210b may include an AC-to-DC converter (e.g., a rectifier circuit) configured to convert the AC voltage induced in the secondary coil of the transformer into an isolated DC voltage (e.g., V0). CS-IS and / or V DD-IS The isolated DC voltage can be provided to the control circuit 1101 (FIG. 11). In some embodiments, the laminated structure can be integrated with the integrated circuit in the package construction where specific performance and / or functionality are required. For example, one or more coils of the transformer chip 1210a can be embedded in the laminated material (e.g., a rigid or flexible laminate disposed on a substrate).

[0178] Figure 12C An illustrative example Figure 12B The internal circuitry of the integrated isolator circuit 1210 illustrated herein includes components configured to provide control signals V. CS The bidirectional isolated electrical connection of the coupler (isolation) circuit 1212 and the transformer 1213 and configured to receive the actuation voltage V DD and initial reference voltage V G0 And generate an isolated actuation voltage V DD-IS and the isolated reference voltage V G-IS The corresponding circuit system (as described above). In some examples, the coupler (isolation) circuit 1212 may be configured for isolating signaling and may include a signal conditioning circuit system. In some examples, the transformer 1213 may include a power transformer using a voltage conditioning circuit system combined with the transformer.

[0179] In some implementations, isolator circuit 1106 may include one or more optical isolators configured to generate isolated control, actuation, and reference voltages by converting an input voltage into a beam and detecting the beam to generate an isolated voltage.

[0180] Circuit breaker circuit system with optical isolation

[0181] In some embodiments, the control circuit 1000 includes a first isolator 1006, a second isolator 1008, and a third isolator 1022. Figure 10 One or more of the isolators 1106a, 1106b and 1106c (FIG. 11) of the control circuit 1101 may include an optical isolator.

[0182] In some implementations, the optical isolator may include at least one light source or photon generating source (e.g., a semiconductor light source, such as a light-emitting diode or laser diode) optically coupled to at least one photosensitive device or photon detection device (e.g., a semiconductor photoconductive device or a photovoltaic device). In some cases, the light source may be configured to receive an input voltage or signal (e.g., V). DD or V CS This generates a beam of light with optical power or intensity proportional to the amplitude of the input voltage or signal. Therefore, an opto-isolator can electrically isolate external circuitry and devices that generate or provide control signals and actuation voltages for the control circuitry of a MEMS switch from the internal circuitry of the control circuitry. Similar to the transformer-based (magnetic) isolation described above, opto-isolator allows the control voltage supplied to the control electrodes of a MEMS switch (e.g., a seesaw switch) to reference the input voltage switched by the MEMS switch.

[0183] Advantageously, replacing one or more magnetic isolators (transformers) in the control circuit with opto-isolators can allow for a reduction in the cost and size of the control circuitry. Since opto-isolators can be smaller than transformers, in some cases, a large number of opto-isolators can be integrated onto a single chip to provide optical isolation for multiple control circuits or multi-channel control circuits that control multiple MEMS switches.

[0184] Figure 13 An example switching circuit 1300 (e.g., a circuit breaker circuit system) is schematically illustrated, which includes a MEMS switch 1002 and a control circuit 1301 configured to operate based on a control signal voltage V provided to the MEMS switch 1002 by an input voltage source 902. CS and input voltage V in To control the state of MEMS switch 1002, for example, similar to the above description. Figure 9B The electrical configuration described. Control circuit 1301 may include, as previously mentioned above, control circuit 1001 ( Figure 10 Some features described in 1101 (Figure 11) may be omitted in detail herein for brevity. Unlike control circuits 1001 and 1101, control circuit 1301 can use an opto-isolator (reference, transformer) from the corresponding actuation or control voltage (V). DD or V CS Provides isolated actuation or control voltage (V) DD-IS or V CS-IS At least one of the following. In some embodiments, the control circuit 1301 may include an actuation and control circuit 1306 and a first opto-isolator 1302 and a second opto-isolator 1304, which are configured to provide isolated actuation and control voltages (V) to the actuation and control circuit 1306. DD-IS and VCS-IS In some embodiments, the control circuit 1301 can be configured relative to the voltage of the intermediate electrode 125 (and thus relative to the voltage of the beam 107), and substantially independent of the input voltage V of the input voltage source 902. in A control voltage V is provided to the front control electrode 110 and the rear control electrode 108 of the MEMS switch 1002. Cf or V Cb .

[0185] In various embodiments, the MEMS switch 1002 may include a rocker switch (e.g., rocker switch 100, 150, or 300) or a cantilever-based switch. In the illustrated example, the MEMS switch 1002 includes, but is not limited to, an asymmetric switch having a rear contact electrode 106 electrically connected to a first terminal 102 (e.g., an input terminal), a front contact electrode 110 electrically connected to a second terminal 104 (e.g., an output terminal), an intermediate electrode 125 electrically connected to the rear contact electrode 106, and a beam 107, wherein the beam 107 is electrically connected to the intermediate electrode 125 by conductive posts anchoring the beam 107 to a substrate, as described herein. In some embodiments, the first terminal 102 may be electrically connected to an input voltage source 902 relative to a first reference voltage (V). G1 (e.g., ground) provides an input voltage V to the first terminal 102. in Furthermore, the second terminal 104 can be electrically connected to the first reference voltage via resistor R3. In some embodiments, the seesaw switch 1002 may include a front control electrode 110 and a rear control electrode 108, which are configured to respond to a front control voltage V received from the control circuit 1001. Cf and subsequent control voltage V Cb The position of the control beam 107 is then controlled (and thus the state of the MEMS switch 1002 is controlled).

[0186] In some embodiments, the actuation and control circuit 1306 may include an actuation and control circuit 1004 similar to those described above with respect to control circuits 1001 and 1101, respectively. Figure 10 One or more of the features described in 1104 (Figure 11) may be omitted in detail herein for the sake of brevity. For example, control circuit 1306 may be configured to receive an isolated actuation voltage V. DD-IS , isolated control voltage V CS-IS and reference voltage V G2 And using V DD-IS And based on V CS-IS Generate relative to V G2 Two control voltages V Cf and VCf For example, when V CS-IS When indicating the on state, V Cf It can be essentially equal to V0, and V Cb It can be essentially equal to zero (e.g., relative to V). G2 ), and when V CS-IS When the indicator is off, V Cb It can be essentially equal to V0, and V Cf It can be essentially equal to zero. In some examples, the reference voltage port 1312 of the actuation and control circuit 1306 can be electrically connected (e.g., short-circuited) to the output of the input voltage source 902, and thus electrically connected to the rear contact electrode 103, intermediate electrode 125, and beam 107 of the MEMS switch 107. In these examples, V G2 It can be basically equal to V in .

[0187] In some implementations, the first optical isolator 1302 may be configured to receive voltage from a voltage source external to the control circuit 1301 relative to an initial reference voltage V. G0 Actuation voltage V DD And provides an isolated actuation V to the actuation and control circuit 1306 relative to a first isolated reference voltage (e.g., isolated ground). DD-IS .

[0188] In some implementations, the second optical isolator 1304 can be configured to receive a signal from a signal source external to the control circuit 1301 relative to the initial reference voltage V. G0 Control voltage V CS And provides the actuation and control circuit 1306 with an isolated control voltage V relative to the second isolated reference voltage. CS-IS .

[0189] In some embodiments, the isolation reference voltage ports (e.g., local output ground ports) of the first opto-isolator 1302 and the second opto-isolator 1304 can be electrically connected (e.g., short-circuited) to the reference voltage port 1312 of the actuation and control circuit 1306, such that the reference voltage of the first isolation and the reference voltage of the second isolation are substantially equal to the reference voltage V of the actuation and control circuit 1306. G2 In some such embodiments, the reference voltage port 1312 may be electrically connected (e.g., short-circuited) to the input voltage source 902 and the first isolated reference voltage and the second isolated reference voltage of the first isolator and the second isolator, and V G2 It can be basically equal to V in In these implementations, the actuation and control circuit 1306 can be configured to amplify V. DD-IS This makes V CfThe voltage (V) of beam 107 in V0 is the switching voltage of the isolated rocker switch (e.g., when no voltage is applied between the intermediate electrode 125 and one of the contact electrodes 106, 110; and when V...). CS-IS When indicating the on state, V Cb It is essentially equal to the voltage of beam 107; and when V CS-IS When the indicator is off, V Cb The voltage (V) of beam 107 in ) Big V0, and V Cf It is basically equal to the voltage of beam 107.

[0190] In some embodiments, the actuation and control circuitry 1306 may include a DC-to-DC converter configured to amplify V DD-IS ; and the driver, which is configured to be based on V CS-IS The indicated switch state provides an amplified V signal to the forward control electrode 108 or the rear control electrode 106. DD-IS or V G2 As a control voltage.

[0191] In some embodiments, at least one of the first optical isolator 1302 and the second optical isolator 1304 may include a light source and an externally unbiased photoelectric power converter configured to use light received from the light source to generate a photovoltage and / or photocurrent proportional to the received light and isolated from the electronic circuitry driving the light source. In some examples, the photoelectric power converter may include an unbiased semiconductor diode and / or transistor (e.g., a photodiode and / or phototransistor) comprising a semiconductor junction such as a PN junction and configured to operate in photovoltaic mode. In some embodiments, the photoelectric power converter may include a plurality of photodiodes connected in series and configured to generate a photovoltage relative to a reference voltage (e.g., V) upon receiving light generated by the light source. G2 The isolated voltage may include multiple photovoltages generated along individual photodiodes and summed in series to provide a large photovoltage proportional to the received light.

[0192] In some embodiments, at least one of the first optical isolator 1302 and the second optical isolator 1304 may include a light source and an externally biased photosensitive device (e.g., a photodetector such as a semiconductor photodiode or phototransistor), the externally biased photosensitive device being configured to use light received from the light source and a bias voltage to generate a photovoltage and / or photocurrent proportional to the received light, and being isolated from the electronic circuitry system driving the light source. In some examples, the semiconductor photodiode may be configured to operate in photoconductive mode, generating a photocurrent and generating a photovoltage by passing the photocurrent through a resistor. In some embodiments, the photodetector may be biased by a voltage source of control circuitry 1301, which generates V DD and V CS Electronic circuit isolation for driving the light source of the first optical isolator 1302 and the second optical isolator 1304.

[0193] In some embodiments, in addition to the first optical isolator 1302 and the second optical isolator 1304, the control circuit 1301 may include a third isolator 1308, which is configured to receive a sensor signal from the sensor 1020 and output an isolated sensor signal 1024. In some embodiments, the sensor 1020 may include a temperature sensor, a current sensor, or other types of sensors capable of generating sensor signals indicative of operating conditions of the seesaw switch 1002. In some cases, the isolated sensor signal 1024 output by the control circuit 1301 may be used by a signal processing circuit to control the V supplied to the control circuit 1301. DD and V CS In some embodiments, the third isolator 1308 of the control circuit 1301 may be an optical isolator that includes a light source optically coupled to a photodetector or photoconverter. In some cases, the light source may be configured to receive an electrical signal from the sensor 1020 and generate light with a light intensity or power proportional to the electrical signal, and the photodetector (or photoconverter) may be configured to receive the light generated by the light source and generate an isolated sensor signal 1024.

[0194] In some implementations, at least one of the second isolator 1304 and the third isolator 1308 may include two pairs of light sources and photodetectors, wherein the first pair of electrical isolations provides input signals and data to the control circuit 1301, and the second pair of electrical isolations provides output signals and data to the control circuit 1301.

[0195] In some implementations, at least the first optical isolator 1302 and the second optical isolator 1304 may be fabricated on a common substrate and / or may be included in a common package.

[0196] In some examples, at least one of the first optical isolator 1302, the second optical isolator 1304, and the third optical isolator 1308 may include an optical coupler or an optical isolator. In some such examples, the optical coupler may include a phototransistor, a pair of phototransistors (e.g., a photodarlington circuit), a photoelectric SCR, a photoelectric TRIAC, or a combination thereof. However, the implementation is not limited to this, and other photosensitive devices may be used to form the optical coupler to provide optical isolation between the external circuitry and the circuitry of the control circuitry 1301.

[0197] In some implementations, the control circuit 1301 may be configured to provide a front control voltage V to the two front control electrodes 208a, 208b. Cf And provide a post-control voltage V to the two post-control electrodes 208a and 208b. Cb To control a MEMS switch network 1102 similar to the MEMS switch network described above with respect to Figure 11.

[0198] Figure 14 This is a schematic diagram illustrating a MEMS switch network comprising two MEMS switches connected in series and actuated by an optically isolated control voltage provided by two optical isolators 1402, 1404. In various embodiments, the individual MEMS switches of the MEMS switch network may include any of the seesaw switches 100, 150, 300 described herein, or cantilever-based switches, or combinations thereof. For illustrative purposes, Figure 14 The MEMS switch network includes two rocker switches (e.g., each similar to rocker switch 100, 150, or 300) connected in series between the input terminal 102 and the output terminal 104 of an electronic circuit (e.g., an electronic circuit protected by two MEMS switches). In some embodiments, Figure 14 The MEMS switch network shown may include, for example, the above-mentioned MEMS switch network. Figure 7 The MEMS switching circuit shown and the MEMS switching network 1102 shown in FIG11 describe one or more features. In some embodiments, the MEMS switching network can be configured to receive a voltage relative to a first reference voltage V from a voltage source 902 via an input terminal 102. G1 Input voltage Vᵢ n And controllably supply Vᵢ to output terminal 104 n In some cases, Figure 14 The beam of the MEMS switch network shown can be provided with an optically isolated front control voltage V to the front control electrodes 208a, 208b. Cf and the optically isolated rear control voltage V provided to the rear control electrodes 210a, 210bCb To control it. In some examples, the preceding control voltage V can be received from the first opto-isolator 1402. Cf And can receive the subsequent control voltage V from the second optical isolator 1404. Cb In some embodiments, each of the first optical isolator 1402 and the second optical isolator 1404 may include a light source and a high-voltage photoconverter. In some embodiments, the high-voltage photoconverter may be implemented as a photodiode array. In some embodiments, other types of photoconverters may be used. In some embodiments, the first optical isolator 1402 and the second optical isolator 1404 may include multiple light sources. In some examples, the number of light sources and the number of photoconverters in each of the first optical isolator 1402 and the second optical isolator 1404 may be selected based on the switching voltage V0 of the optical switches in the optical switch network. In some embodiments, the photoconverter of the first optical isolator 1402 may be electrically connected between the first front control electrode 208a and the second front control electrode 208b and a common rear contact electrode 204 shared between the two switches in the MEMS switch network, which is electrically connected (e.g., short-circuited) to the first intermediate electrode 220a and the second intermediate electrode 220b. Therefore, the first optical isolator 1402 can provide a front control voltage V relative to the voltage of the common rear electrode 204. Cf The preceding control voltage V Cf Used as a second reference V G2 The second reference V G2 Unlike V G1 And can be essentially equal to (V) in - V G1 ) / 2. Similarly, the second opto-isolator 1404 can provide relative to the second reference voltage V. G2 Post-control voltage V Cf .

[0199] In some implementations, an essentially zero actuation voltage V is supplied to the light source of the second optical isolator 1404. DD-C2 And provide an actuation voltage V to the light source of the first optical isolator 1402. DD-C1 This can deactivate the optical switch network from an off state to an on state, where V DD-C1 The amplitude is configured such that the output of the first optical isolator 1402 is substantially equal to or greater than V. s The pre-control voltage V Cf The preceding control voltage V Cf It can be substantially equal to V0 of the individual MEMS switches in the MEMS switch network (e.g., 80 volts), where V0 is the switching voltage of the isolated individual MEMS switches.

[0200] In some implementations, an essentially zero actuation voltage V is supplied to the light source of the first optical isolator 1402. DD-C1 And provide an actuation voltage V to the light source of the second optical isolator 1404. DD-C2 This can activate the optical switch network from the on state to the off state, where V DD-C2 The amplitude is configured such that the output of the second opto-isolator 1404 is substantially equal to or greater than the post-control voltage V0. Cb .

[0201] In some implementations, the control voltage V provided by the photoelectric converter of the first optical isolator 1402 and the second optical isolator 1404 Cf (or V) Cb It can be greater than V. DD-C1 (or V) DD-C2 For example, by irradiating the photoconverter over an extended period of time, the optically generated charge accumulated on the control electrode can accumulate to generate a charge greater than V between the control electrode and the corresponding beam. DD-C1 (or V) DD-C2 The voltage difference. Therefore, in some embodiments, the first opto-isolator 1402 and the second opto-isolator 1404 can be used to generate the voltage required to actuate the beams of the two MEMS switches, and the corresponding MEMS switch system may not require additional electronic circuitry (e.g., DC-to-DC converters and drivers) and separate control signals for actuation. In some cases, regarding Figure 14 MEMS switching systems of the type described may lack high-voltage generators, such as high-voltage power supplies (e.g., supplying more than 20V) and charge pumps. Removing the charge pump and / or high-voltage power supply can provide a significant noise reduction. In some examples, certain circuits with charge pumps and / or high-voltage power supplies may exhibit noise of up to 115 dBm. For example, removing the charge pump and / or high-voltage power supply can reduce noise to less than -135 dBm or less than -157 dBm.

[0202] In some implementations, the opto-isolator (or at least a portion thereof) and the MEMS control circuitry, including the actuation and control circuitry of the MEMS switch, can be integrated on a common substrate and / or co-packaged, for example, to reduce manufacturing costs and form factor. Furthermore, in some implementations, the MEMS switch controlled by the control circuitry can be integrated on a common substrate and / or packaged together with the control circuitry or a portion thereof (e.g., the opto-isolator and / or the actuation and control circuitry). Figure 15An example integrated MEMS switching system is illustrated, which includes a MEMS switching device 1506, a voltage supply and control circuitry 1504 configured to control the MEMS switching device 1506, and an actuation and control circuitry 1504 configured to supply a voltage to the actuation and control circuitry 1504. DD and V CS Another circuit system electrically isolated optical isolator 1502. In various embodiments, MEMS switching device 1506 may include a rocker switch (e.g., rocker switch 100, 150, or 300), a MEMS switching network (e.g., MEMS switching network 1102 or...). Figure 7 (e.g., the MEMS switch network shown), or another type of MEMS switch. In some embodiments, two or more of the MEMS switch device 1506, actuation and control circuitry 1504, and opto-isolator 1502 may be disposed on a common substrate. In some embodiments, the MEMS switch device 1506, actuation and control circuitry 1504, and opto-isolator 1502 may be fabricated on separate chips, which are then disposed and / or mounted on the common substrate 1510 after fabrication. In some cases, the MEMS switch device 1506 may be configured to control the electrical connection between the input terminal 102 and the output terminal 104 of electronic circuitry (e.g., electronic circuitry formed on the substrate 1510).

[0203] In some embodiments, the optical isolator 1502 may include a light source and a photoconverter configured to receive light generated by the light source. In some examples, the optical isolator 1502 may include a first layer 1502a comprising a light source disposed over a second layer 1502b including the photoconverter; and an intermediate layer 1502c (e.g., an optically transparent layer) configured to allow light generated by the light source to be received by the photoconverter, or configured to redirect or direct light generated by the light source to the photoconverter. The light source may include one or more light-emitting diodes or laser diodes, and the photoconverter may include one or more photodiodes, phototransistors, or other photosensitive devices (e.g., photosensitive semiconductor devices). In some embodiments, the optical isolator 1502 may include multiple pairs of light sources and photoconverters, each configured to isolate one of the signals or voltages supplied to the actuation and control circuitry 1504. In some cases, at least one pair of light sources and photoconverters may use different wavelengths compared to other pairs. In some cases, the optical isolator 1502 may include a single light source and multiple photoelectric converters configured to receive light from the single light source.

[0204] In various embodiments, the intermediate layer 1502c may include an optically transparent medium, such as a transparent adhesive, paste, or film, having high optical transmittance in a wavelength range including the wavelength generated by the light source. In some cases, the intermediate layer 1502c may include an optical interposer configured to guide light generated by a light source in the first layer 1502a to a photoelectric converter (e.g., a photodetector) in the first layer 1502b. In some examples, the interposer may include a Fresnel lens (e.g., a planar Fresnel lens), a composite structure including a waveguide, a structure including a filter (e.g., a planar filter, such as a grating or a multilayer coating), an optical waveguide, or a combination thereof. Therefore, in various embodiments, the intermediate layer 1502c may be fabricated (or integrated into a package / SIP structure) using different methods (e.g., layer deposition, photolithographic patterning, hybrid integration, bonding, etc.) and different materials, depending on the requirements of the chosen structure and application.

[0205] In some embodiments, the optical isolator 1502 may include a light source and a photoconverter fabricated side-by-side on a common surface (e.g., the top surface of substrate 1510) such that the photoconverter can receive at least a portion of the light generated by the light source via an optical path extending substantially laterally over the common surface. In some examples, the optical path may be established by an intervening layer formed on or over a common surface between the laterally separated light source and photoconverter. The intervening layer may be configured to facilitate light transmission from the light source to the photoconverter. In various embodiments, the intervening layer may include a transparent adhesive, paste, or film having high optical transmittance in a wavelength range including the wavelength of the light source. In some cases, the intervening layer may include an optical interpolator configured to guide or direct light generated by the light source to the photoconverter (e.g., a photodetector) via the optical path. In some examples, the interpolator may include a Fresnel lens, a composite structure including a waveguide, a structure including a filter (e.g., a planar filter, such as a grating or a multilayer coating), or a combination thereof. Therefore, in various implementations, the interposer can be fabricated (or integrated into the package / SIP structure) using different methods (e.g., layer deposition, photolithographic patterning, hybrid integration, bonding, etc.) and different materials, depending on the structure chosen and the requirements of the application.

[0206] In some embodiments, the MEMS switching device 1506, the actuation and control circuit 1504, and the opto-isolator 1502 can be electrically coupled to each other via wire bonding. In some embodiments, two or more of the MEMS switching device 1506, the actuation and control circuit 1504, and the opto-isolator 1502 can be electrically coupled via wires formed on or on the substrate 1510.

[0207] In some cases, Figure 15 The integrated MEMS switching system shown may include a switching circuit 1300.

[0208] In some cases, Figure 14 The MEMS switches in the illustrated MEMS switch network can be fabricated on a first chip, and the first opto-isolator 1402 and the second opto-isolator 1404 can be fabricated on a second chip. The corresponding MEMS system can be formed by placing the first chip and the second chip on a common substrate and electrically connecting them. For example, Figure 15 The MEMS device 1506 may include a first chip, the opto-isolator 1502 may include a second chip, and the voltage supply and actuation and control circuitry 1504 may be removed to directly electrically connect the opto-isolator 1502 to the MEMS device 1506.

[0209] MEMS switch protection with field-effect transistors

[0210] As described above, the resistive behavior of the conductive path established by a seesaw switch (or a typical MEMS switch) can vary with the voltage difference between the front control electrode (e.g., control electrode 110) and the conductive beam (e.g., conductive beam 107). It has been observed that the electrical path between the front contact electrode (e.g., front contact electrode 109) and the conductive beam can vary asymptotically (e.g., in steps) between on-resistance and open-circuit. Without being bound by any theory, such behavior can be attributed to a physical arrangement in which the number of contact areas or contact points between the front contact electrode and the conductive beam gradually decreases. This could be due to, for example, a rough or uneven contact surface between the contact electrode and the beam. Furthermore, similar effects can be observed when the contact area depends on the amount of force applied between the contact electrode and the beam (e.g., proportional to the amount of force applied between the contact electrode and the beam). The inventors have discovered that this behavior can be understood by modeling a seesaw switch (or a typical MEMS switch) as multiple MEMS switching elements connected in parallel, where the electrical path established by individual MEMS switching elements can have very large resistance (e.g., similar to an open circuit) or on-resistance (e.g., low resistance between 5 and 10 ohms). Therefore, as the voltage between the front control electrode and the conductive beam increases to transition from an off state to an on state, the number of MEMS switching elements providing on-resistance gradually increases, and thus the resistance of the conductive junction established by the MEMS switch gradually decreases. Similarly, as the voltage between the front control electrode and the conductive beam decreases to transition from an on state to an off state, the number of MEMS switching elements providing on-resistance gradually decreases, and thus the resistance of the remaining conductive junction established by the MEMS switch gradually increases. In some cases, during such switching events, a very large current can flow through the last one or a few MEMS switching elements transitioning from on-resistance to open circuit, and similarly, a very large voltage drop can occur across the first one or a few MEMS switching elements transitioning from open circuit to on-resistance. In some cases, when MEMS switches (e.g., rocker switches) are used in circuit breakers to switch large voltages (e.g., greater than 100, 200, or 300 volts), the discharge and / or high current through several MEMS switching elements (each with a few ohms of on-resistance) during such transitions can severely damage the MEMS switching elements, and equivalently, severely damage the contact area of ​​the conductive beam and the front contact electrode of the MEMS switch, resulting in a high-resistance on-state, or in some cases, causing MEMS switch malfunction.

[0211] In some implementations, to avoid extreme voltage and current conditions that may occur in small, localized areas at the contact surfaces of the front contact electrode and the conductive beam (equivalent to several MEMS switching elements in a plurality of MEMS switching elements), a protection switch (e.g., a transistor such as a field-effect transistor), which may be referred to herein as a thermal switch or protection switch, may be electrically connected in parallel with a rocker switch to reduce the current flowing through the rocker switch during transition from an off state to an on state, and to reduce the voltage between the conductive beam and the front contact electrode of the rocker switch during transition from an on state to an off state. In some such implementations, a control voltage (e.g., a gate voltage Vg) supplied to the transistor may be configured to turn on the protection switch before an activation or deactivation voltage is supplied to the rocker switch, and to turn off the protection switch when the rocker switch has completed its transition to the on or off state. In some cases, assuming a relatively short transition period, the current handled by the transistor may not impose extreme current / voltage handling requirements on the transistor, thus allowing the use of transistors with reasonable size and cost.

[0212] It should also be understood that although this document describes the thermal switching conditions with reference to a model equivalent circuit of MEMS elements with multiple parallel electrical connections, the inventors have found that protective switches to prevent thermal switching conditions are particularly useful in the context of high-current applications of circuit breakers that can handle high currents using multiple MEMS switches connected in parallel. Therefore, as disclosed herein, multiple MEMS elements depicted as electrically parallel can represent an equivalent circuit of either multiple actual MEMS switches or a single MEMS switch.

[0213] Figures 16A to 16DThe illustration schematically depicts the current flowing through an equivalent circuit during the transition from an on state to an off state. This equivalent circuit includes one or more MEMS switches (e.g., a rocker switch) 1602 protected by a protective switch (e.g., a field-effect transistor FET) 1600. In this example, the MEMS switch 1602 is configured to control the electrical connection between a first terminal 102 (e.g., an input terminal) and a second terminal 104 (e.g., an output terminal) connected to a voltage source 902 via a resistor R3. As described above, one or more MEMS switches 1602 may represent multiple MEMS switching elements or a single MEMS switch with multiple contacts. One or more MEMS switches 1602 include a main group 1604a (e.g., with a total on-resistance of approximately 66 milliohms for illustrative purposes only) and a single MEMS switching element 1604b with an on-resistance (e.g., with a total on-resistance of approximately 6 milliohms for illustrative purposes only), representing the last MEMS switch or the last area of ​​the contact surface to be disconnected during the transition to the off state. In some cases, when one or more MEMS switches 1602 are in the ON state ( Figure 16A The current Ip through group 1604a can be, for example, 2.96 A, and the current I through a single element 1604b can be... L The current can be 33 mA, and the protection switch 1600 is off (no current flows through FET 1600). In some cases, FET 1600 is turned on by providing sufficient voltage (Vg) to the gate contacts before activating one or more MEMS switches 1602. Figure 16B As a result, a portion of the current can be diverted to the protective switch 1600, which can have an on-resistance of 90 milliohms. For illustrative purposes only, 1.2 A (approximately 40% of the total current) can pass through the protective switch 1600, Ip can be approximately 1.8 A, Ip can be 2.96 A, I... L The current can be 20 mA, and the protection switch 1600 can be in the off state (e.g., Vg = 0, and no current or negligible current flows through FET 1600). All MEMS switching elements in group 1604a are switched to open circuits. Figure 16C After that, approximately 2 A can be passed through the protection switch 1600, and I LThe current can be 45 mA. Therefore, because the FET 1600 handles most of the current, the current flowing through the individual MEMS switching element 1604b (the last contact area) remains low and is unlikely to cause significant damage to one or more MEMS switches 1602. When the individual MEMS switching element 1604b goes open, the entire current (approximately 3 A) is diverted to the protection switch 1600, preventing the formation of a high voltage and potential discharge across the individual MEMS element 1604b. Once the individual MEMS switching element 1604b is turned off, the FET 1600 can be turned off by reducing the gate voltage Vg to zero or below a threshold. Through a similar process, the MEMS switch can be turned on before transitioning from the off state to the on state, protecting the MEMS switch 1602 from extreme voltage / current.

[0214] Figures 17A to 17B Examples are given for Figures 16A to 16C The circuit shown, when the protection switch 1600 is in the off state (A) and when the protection switch 1600 is in the on state (B), during the transition of one or more MEMS switches 1602 from the on state to the off state, Ip and I L and the voltage drop (V) between input terminal 102 and output terminal 104 IO The simulation of the time variation of the MEMS switch 1602 from an on state to an off state is shown in this example calculation. The transition of one or more MEMS switches 1602 from an on state to an off state is modeled by the transition of a set of MEMS switching elements 1604a and a single MEMS switching element 1604b, where the resistance R changes during the transition. P Gradually increasing (as more MEMS switching elements switch to off), and the resistance R of a single MEMS switching element 1604b L It suddenly jumps from the connected state to the disconnected state. For example... Figure 17A As shown, when the protection switch 1600 is open, I L The sudden increase is due to all MEMS switching elements in group 1604a switching to the off state, and exactly before the last MEMS switching element 1604b switches off, and because the last MEMS switching element 1604b switches off; and during the transition of the last MEMS switching element 1604b to the off state, V IO Rapidly increased to V in In contrast, such as Figure 17B As shown, when the protection switch 1600 is turned on, I L There is no significant change because when the protective switch is open, all MEMS switching elements in group 1604a switch to open, and V IO The voltage increases with a delay after the last MEMS switching element 1604b is turned off, increasing to V. inThe calculations show that by turning on the protection switch 1600 before activating the MEMS switch 1602 and turning off the protection switch 1600 after the MEMS switch 1602 is deactivated, the MEMS switch 1602 can be protected from sudden current flows through localized areas of the contact pads and / or conductive beams.

[0215] Figures 17C to 17D This illustration demonstrates the situation when the protective switch 1600 is in the open state (A) and the protective switch 1600 is in the closed state (B), during the transition of one or more MEMS switches 1602 from the open state to the closed state. Figures 16A to 16C The circuit shown, I P and I L and the voltage drop (V) between input terminal 102 and output terminal 104 IO The simulation of time variation. Similar to... Figures 17A to 17B In this example calculation, the transition of one or more MEMS switches 1602 from an off state to an on state is modeled by the transition of a group of MEMS switching elements 1604a and a single MEMS switching element 1604b, where the resistance R during the transition... P Gradually decreasing (as more MEMS switching elements are turned on), and the resistance R of a single MEMS switching element 1604b... L Suddenly jumps from the disconnected state to the connected state. For example... Figure 17C As shown, when the protection switch 1600 is open, I L The sudden increase occurs because all MEMS switching elements in group 1604a are turned on, and just before the last MEMS switching element 1604b is turned on, and because the last MEMS switching element 1604b is turned on; and during the transition of the last MEMS switching element 1604b to the on state, V IO It rapidly decreases to near zero. In contrast, such as Figure 17B As shown, when the protection switch 1600 is turned on, I L There is no significant change because all MEMS switching elements in group 1604a are on, and V is off when the protection switch is off. IO The current decreases to near zero with a delay after the last MEMS switch element 1604b is turned on. This calculation shows that by turning on the protection switch 1600 before deactivating the MEMS switch 1602 and turning off the protection switch 1600 after the MEMS switch 1602 is turned on, the MEMS switch 1602 can be protected from sudden current flows through localized areas of the contact pads and / or conductive beams.

[0216] In some implementations, the protection switch 1600 may include a transistor such as a field-effect transistor (FET). The FET may include a metal-oxide-semiconductor (MOS) FET, and one or more MEMS switches 1602 may include... Figure 10 The MEMS switch 1002 (including a single rocker switch) or the MEMS switch network 1102 (including two rocker switches) in Figure 11 is used to protect one or more of the rocker switches during the transition between an on and off state. In various embodiments, the protection switch 1600 may include a power FET. In some examples, FET 1600 may include a GaN FET or a SiC FET. In some embodiments, a one-shot circuit may be used to control FET 1600. In some examples, the one-shot circuit may include an XOR gate and a delay circuit (e.g., formed by one or more resistors and capacitors). In some examples, the one-shot circuit may include several inverter gates connected in series.

[0217] Figure 18 An example switching circuit 1800 is schematically illustrated, which includes a MEMS switch 1002 (mentioned above). Figure 10 (Described) and control circuit 1801, which is configured to provide a front control voltage V to the front control electrode 110 and the rear control electrode 108 of the MEMS switch 1002, respectively. Cf and subsequent control voltage V Cb This controls the state of the MEMS switch 1002. In some examples, the control circuit 1801 may include an actuation and control circuit 1804 configured to generate a pre-control voltage V. Cf and subsequent control voltage V Cb MEMS switch 1002 can be connected, for example, via resistor R3 to input terminal 102 connected to voltage source 902 and connected to electrical ground or another reference voltage (V). G1 The output terminals 104 of the control circuit are located between the control circuit 1001 and the control circuit 1002. In some cases, the control circuit 1802 may include the control circuit 1001 described above. Figure 10 The features described herein are omitted for brevity. For example, control circuit 1801 may be configured to provide the conductive beam 107 with a voltage (V) relative to the input voltage provided by voltage source 902 via input terminal 102, rear contact electrode 106, and intermediate electrode 125. in The pre-control voltage V) Cf and subsequent control voltage V Cb The intermediate electrode 125 can be electrically connected to the rear contact electrode 106.

[0218] It should be understood that, as described above, the MEMS switch 1002 may include multiple MEMS switching elements, or behave similarly to multiple parallel MEMS elements.

[0219] In some implementations, the protection switch 1807 (e.g., a MOS FET) may be connected in parallel with the MEMS switch 1002 of the switching circuit 1800 to protect the contact surfaces of the conductive beam 107 and the front contact pad 109 during transitions between on and off states. Similar to protection switch 1600 ( Figures 16A to 16D In some implementations, the protection switch 1807 may be turned on, for example, by providing a gate voltage Vg to the gate 1810 of the protection switch 1807, to establish a low-resistance electrical path in parallel with the MEMS switch 1002, thereby reducing the amount of current through the conductive junction formed between the conductive beam 107 and the front contact electrode 109 when transitioning from the on state to the off state, or reducing the voltage difference between the conductive beam 107 and the front contact electrode 109 when transitioning from the off state to the on state.

[0220] In some different implementations, the state of the protection switch 1807 can be determined by the gate voltage (V) generated by the control circuit 1801 or a separate thermal switch control circuit (not shown) different from the control circuit 1801. g The thermal switch control circuit can be controlled by a circuit that is integrated into the control circuit 1801 or can be an external circuit connected to the control circuit 1801.

[0221] In some implementations, the gate voltage V g This may include an isolated gate voltage signal generated by isolator circuit 1106 in response to receiving an external gate control voltage from external thermal switch control circuitry. In some such embodiments, isolator circuit 1106 may include a fourth isolator configured to receive the external gate control voltage and generate an isolated gate voltage. In some examples, the fourth isolator 1106d may be separate from the first isolator 1106a, the second isolator 1106b, and the third isolator 1106c. In some such embodiments, the external thermal switch control circuitry may be at least partially based on V CS or V CS-IS To generate and / or control the gate voltage V g For example, an external thermal switch control circuit can time-couple the external gate control voltage with V. CS or V CS-IS Alignment is performed such that the protection switch 1807 is turned on before the MEMS switch 1002 is activated or deactivated, and is turned off after the MEMS switch 1002 is activated or deactivated.

[0222] In some implementations, the actuation and control circuit 1804 of the control circuit 1801 can be configured to be at least partially based on V. CS or V CS-IS This is used to generate and / or control the gate voltage Vg. In some such embodiments, the actuation and control circuit 1804 or the thermal switch control circuit can use an isolated control signal V. CS-IS (For example, received from the isolator of control circuit 1801) and / or V Cf and V Cb And at least in part based on V Cf and V Cb and / or V CS-IS To generate and / or control the gate voltage Vg. For example, the actuation and control circuit 1804 can time-dependently cause Vg to... g With V CS-IS Alignment and / or ensuring that the protection switch 1807 is turned on before the MEMS switch 1002 is activated or deactivated.

[0223] Figure 19 The schematic illustration illustrates the control signal voltage (e.g., isolated control signal voltage V) provided to the MEMS switch 1002 during the transition from an off state to an on state (and vice versa). CS-IS ) and the preceding control voltage V Cf and subsequent control voltage V Cb and the gate voltage (V) supplied to the protection switch 1807. g Example of time variation.

[0224] In the example shown, at time t on At that time, V CS-IS You can switch from 0 to V CSm To change the state of MEMS switch 1002 from off to on, and at time t9, the gate voltage (V g The switching voltage (V) can be changed from 0 to the on-state voltage of the protection switch 1807. gm This is to activate protection switch 1807 to protect MEMS switch 1002. In some cases, once the transition to the ON state is complete (e.g., at time t4, V...), the protection switch 1807 is activated to protect MEMS switch 1002. g From V gm Switch back to 0 to turn on protection switch 1807. Furthermore, in the example shown, at time t... off At that time, V CS-IS From V Cm Switching to 0 changes the state of MEMS switch 1002 from the ON state to the OFF state, and at time t 11 At that time, the gate voltage (V g The switching voltage (V) can be changed from 0 to the on-state voltage of the protection switch 1807.gm This is to activate protection switch 1807 to protect MEMS switch 1002. In some cases, once the transition to the off state is complete (e.g., at time t8, V...), the protection switch 1807 is activated to protect MEMS switch 1002. g From V gm Switch back to 0 to disconnect the protection switch F1807.

[0225] As referenced above Figure 11B In order to change the state of MEMS switch 1002 from the off state to the on state, from t on From time t1 to time t2, V can be... Cb From V Cm Decrease to 0, and from time t3 (which can be after t2) to time t4, V Cf It can increase from 0 to V Cm In some cases, t9 can be earlier than t1, such that when V Cb When the reduction begins, FET1807 is already turned on. In some such cases, depending on the delay between ton and t1, t9 can precede t1. on 、and t on Overlapping or later than t on In some cases, t on The delay between t1 and t2 can be a predetermined value (e.g., a setting parameter of the actuation and control circuit 1804), and the actuation and control circuit 1804 or the thermal switch control circuit can be configured relative to t1. on Align the time to t9, such that t9 < t1. Similarly, to change the state of MEMS switch 1002 from the ON state to the OFF state, from t... off From time t5 to time t2, V Cf From V Cm Decrease to 0, and start from time t7 (which can be after t6), V Cb It can increase from 0 to V Cm In some cases, t 11 It can be less than t5, such that when V Cf When the decrease begins, the protective switch 1807 is already turned on. In some such cases, depending on t off The delay between t5 and t 11 It can be less than, equal to or greater than t off In some cases, t off The delay between t5 and t6 can be a predetermined value (e.g., a setting parameter of the actuation and control circuit 1804), and the actuation and control circuit 1804 or the thermal switch control circuit can be configured relative to t6. off Aligning with t in time 11 , making t 11< t5. In some cases, once the transition to the ON state is complete (e.g., at time t8), V can be switched off. g From V gm Switch back to 0 to disconnect protection switch 1807. In some examples, t on The edge of the MEMS control signal can be delayed relative to t9 (the edge of the protection switch control signal) for a duration of 0.1 to 1 microsecond, 1 to 100 microseconds, 100 microseconds to 1 millisecond, 1 to 100 milliseconds, or a time value within a range defined by any one of these values ​​or a value greater or less than a certain value. In some examples, t1 (the time when the MEMS control voltage begins to change) can be relative to t... on The duration of a delay of 0.1 to 1 microsecond, 1 to 100 microseconds, 100 microseconds to 1 millisecond, 1 millisecond to 100 milliseconds, or a time value within a range defined by any one of these values ​​or a value greater or less than a value.

[0226] In some implementations, the protection switch 1807 may be replaced by two or more protection switches connected in parallel with the MEMS switch 1002 between the input terminal 102 and the output terminal 104.

[0227] In some implementations, one or more protective switches may be connected in parallel between the input terminal 102 and the output terminal 104 of the MEMS switch network 1102 of switch system 1100 or the MEMS switch 1002 of switch system 1300, for protection against damage during the transition between an on and off state. In some cases, these protective switches may be controlled by control circuitry of switch systems 1100 and 1300 or a separate thermal switch control circuit, for example, based on the above description regarding... Figure 18 The timing signal alignment described is used for control; for the sake of brevity, the details will not be repeated in this article.

[0228] In some implementations, two or more protection switches may be connected in parallel with a MEMS switch or MEMS switch network to provide protection during activation or deactivation processes. In some examples, two or more protection switches may be connected in series between input terminals 102 and 104 to protect a MEMS switch or MEMS switch network having an operating voltage greater than the operating voltage of a single protection switch. In some examples, two or more protection switches may be connected in parallel between input terminals 102 and 104 to protect a MEMS switch or MEMS switch network having an operating current greater than the operating current of a single protection switch. In some examples, three or more protection switches may be connected in parallel and in series between input terminals 102 and 104 to protect a MEMS switch or MEMS switch network having an operating voltage and current greater than the operating voltage and current of a single protection switch. For example, two pairs of series-connected protection switches may be connected in parallel with a MEMS switch or MEMS switch network. In some implementations, two or more protection switches may be controlled by a single gate voltage distributed within the protection switches, or by individual gate voltages synchronized to control the protection switches.

[0229] Circuit breakers with MEMS switches and electrical overstress (EOS) protection

[0230] In some cases, MEMS switches may be exposed to electrical overstress (EOS) events, which can damage the switch by, for example, generating a high voltage between the conductive beam and the contact electrode and a high current exceeding the specified limits of the MEMS switch (e.g., exceeding one or both of the operating voltage and operating current of the MEMS switch). For example, a MEMS switch (e.g., a rocker switch) may experience transient signal events, or electrical signals of short duration with rapidly changing voltage and / or current and high power. Transient signal events can include, for example, electrostatic discharge (ESD) events caused by the sudden release of charge (e.g., voltage / current spikes) from a device or system electrically connected to the MEMS. In some cases, EOS events occur when the MEMS switch is in the on or off state. EOS events can cause high current to flow through the contact area of ​​the MEMS switch (e.g., the end of the conductive beam that contacts the corresponding contact electrode) and may even cause arcing between the non-contact areas of the MEMS switch (e.g., the end of the conductive beam that is separated from the corresponding contact electrode). Such high current or arcing events can damage the MEMS switch. To prevent such EOS events from damaging the MEMS switch, according to various embodiments, an EOS protection device can be integrated with the MEMS switch and configured to shunt the discharge current caused by the EOS event. Specifically, a spark gap can be configured to generate an arc in response to an overvoltage applied to the MEMS switch to protect it from damage, for example, when the switch is in the ON or OFF state. In some such embodiments, the EOS or protection device can be electrically connected in parallel with the MEMS switch between the input and output terminals (e.g., the input and output terminals of the MEMS switch). In some embodiments, the EOS device can be electrically connected between the input (or output) terminal and ground voltage or a reference voltage (e.g., ...). Figure 11A The isolated reference voltage V G-IS The EOS protection device can have an activation voltage lower than the voltage that would damage the MEMS switch (e.g., arc voltage). For example, in the open state, the EOS protection device can have an activation voltage lower than the breakdown voltage between the conductive beam and the open contact electrode in the contact electrode. In the closed state, the EOS protection device can have an activation voltage lower than the voltage that would cause excessive current flow between the conductive beam and the contact electrode in the contact electrode, thus damaging the MEMS switch.

[0231] Figure 20A circuit breaker 2000 connected between a first terminal 102 and a second terminal 104 is schematically illustrated. For example, the first terminal 102 is illustrated as connected to an electric power source (e.g., a voltage source) 902, and the second terminal 104 is illustrated as connected to an electrical system 2006 (e.g., a motor such as an electric motor). The circuit breaker 2000 is configured to use at least one MEMS switch 2002 to control the electrical connection between the power source 902 and the electrical system 2006. In some embodiments, the circuit breaker 2000 may include a MEMS switch 2002 and an EOS protection device 2004 connected in parallel with the MEMS switch and configured to protect the MEMS switch 2002 from EOS events. In some embodiments, the MEMS switch 2002 may include a rocker switch or a network of rocker switches (e.g., Figure 1B , Figure 2A , Figure 3A , Figure 5A , Figure 10 The seesaw switch or Figure 7 , Figure 8 and Figure 11A , Figure 8 (A seesaw switch network in the circuit). In some embodiments, the seesaw switch 2002 and the EOS protection device 2004 may be connected between the input terminal 102 and the output terminal 104 of the circuit breaker 2000, which are connected to the power supply 902 and the electrical system 2006, respectively. In some examples, the electrical system may include an inductive load or device (e.g., a motor) that may generate a very large transient voltage 2008 (e.g., greater than 500 volts or 1000 volts) between the input terminal 102 and the output terminal 104 in response to a large transient current (di / dt). In some such examples, the EOS protection device 2004 may be configured as a protector for the generated voltage (L×di / dt) of the MEMS circuit breaker, for example, by providing a shunt path (e.g., by generating an arc) when the transient voltage exceeds a threshold voltage (e.g., breakdown voltage) of the EOS protection device 2004.

[0232] In some cases, the EOS protection device 2004 may include a spark gap (e.g., an integrated spark gap or an on-chip spark gap). Compared to solid-state EOS protection devices, in some cases, the spark gap may not transmit high voltage across the circuit breaker due to leakage current.

[0233] In some embodiments, the EOS protection device 2004 may include a lateral spark gap device 2012 comprising a pair of spaced-apart conductive structures, wherein an electric arc can typically occur in a horizontal direction, for example, in a direction parallel to the main surface of the substrate on which the conductive structures are formed. For example, the conductive structures may be formed at substantially the same vertical height or may be coplanar. The conductive structures may have suitable shapes, including sharp or substantially flat ends. In some such embodiments, the lateral spark gap 2012 may include an array of one or more spark gaps, such as coplanar gaps, formed between a pair of coplanar electrode arrays formed on or above the substrate. Each electrode array in the pair of coplanar electrode arrays may be connected to one of a pair of terminals through which the EOS protection device 2004 can be connected to input terminal 102 and output terminal 104.

[0234] In some embodiments, the EOS protection device 2004 may include a vertical spark gap device 2010 comprising a pair of vertically separated conductive structures, wherein an electric arc can typically occur in a vertical direction, for example, in a direction intersecting with the main surface of a substrate on which the conductive structures are formed. The conductive structures may have suitable shapes, including sharp or substantially flat ends. In some such embodiments, the vertical spark gap device 2010 may include one or more spark gaps, for example, a vertical gap array formed between a pair of vertically separated electrode arrays formed on or above the substrate. Each of the pair of vertically separated electrode arrays may be connected to one of a pair of terminals through which the EOS protection device 2004 can be connected to input terminal 102 and output terminal 104.

[0235] In some embodiments, the EOS protection device 2004 may include a microplasma chamber configured to form microplasma (e.g., with low resistance) upon receiving a high-voltage signal (e.g., an unexpected transient signal). In some such embodiments, the microplasma chamber may include a closed volume or sealed chamber (e.g., hermetically sealed) formed on a chip (e.g., a semiconductor chip). For example, the sealed chamber may include a cavity formed within a substrate and a dielectric layer formed over the cavity. In some cases, the sealed chamber may be filled with a gas or gas mixture at a specified pressure. The EOS protection device 2004 may further include a pair of electrodes connected to a pair of terminals, through which the EOS protection device 2004 can be connected to an input terminal 102 and an output terminal 104. In some cases, at least one of the electrodes may be in contact with gas molecules contained in the chamber and may be configured to form microplasma upon receiving a high voltage via the input terminal 102 and the output terminal 104.

[0236] In some embodiments, circuit breaker 2000 may include an EOS protection device 2005 electrically connected between an input port 102 (or an output port 104) of circuit breaker 2000 and a reference potential such as ground (e.g., an isolated reference potential such as an isolated ground). In various embodiments, circuit breaker 2000 may include one or two EOS protection devices 2005 and 2004.

[0237] Figure 21A An example circuit breaker 2100 is schematically illustrated, comprising a MEMS switch 2002 and an EOS protection device 2004 configured to protect the MEMS switch 2002 from unexpected external transient signals (e.g., when the MEMS switch 2002 is in the open state). The EOS protection device 2004 is also configured to protect a protection switch 2102 (e.g., a transistor) from the formation of high current and / or high voltage between the contact electrodes and the conductive beam of the MEMS switch 2002 during transitions between the on and off states (as described above). Figures 16A to 16D and Figure 18 The effects described above. In some embodiments, MEMS switch 2002, EOS protection device 2004, and protection switch 2102 may be connected in parallel between input terminal 102 and output terminal 104 of circuit breaker 2100. In some embodiments, protection switch 2102 may include one or more features described above with respect to protection switches 1600 and 1807, such as... Figures 16A to 16D and Figure 18 For the sake of brevity, the details of the examples will not be repeated in this article.

[0238] In some implementations, circuit breaker 2100 may be configured to supply power from electric source 902 connected to input terminal 102 to a device or system connected to output terminal 104, and allow the system or user to control the connection between the power source and the device or system using MEMS switch 2002.

[0239] In some implementations, circuit breaker 2100 may include the components described above regarding the respective aspects. Figure 10 , Figure 11A and Figure 13 The features described in the switching circuits 1000, 1100, and 1300 may be omitted in this document for the sake of brevity.

[0240] In some embodiments, circuit breaker 2100 may include isolator module 2106, which includes one or more isolators (e.g., optical isolators, magnetic isolators, etc.) configured to provide electrical isolation between circuits and components within circuit breaker 2100 and one or more external systems and devices. In some embodiments, isolator module 2106 may include the components described above. Figure 11A and Figure 18 The isolator circuit 1106 describes one or more features. External systems and devices can provide signals or supply voltages to the circuit breaker 2100 and / or receive signals from the circuit breaker 2100. In some embodiments, the circuit breaker 2100 may include a voltage control and supply circuit 2104 configured to receive signals from the isolator module 2106 and provide control signals to the MEMS switch 2002 and the protection switch 2102. For example, the isolator module 2106 may receive a supply voltage from the actuation voltage supply 2108, receive a switch control signal from the switch control circuit 2112 and a protection switch control signal from the protection switch control circuit 2114, and may be configured to provide corresponding isolated voltages and signals to the voltage control and supply circuit 2104. In some cases, the supply voltage received from the actuation voltage supply 2108, the switch control signal received from the switch control circuit 2112, and the protection switch control signal received from the protection switch control circuit 2114 can be generated relative to a first common reference voltage 2110 (e.g., common ground), which is electrically isolated from a second common reference signal, generating corresponding isolated supply voltages, isolated switch control signals, and isolated protection switch control signals relative to the second common reference signal. In some cases, the second common reference can be substantially equal to the potential of one or more conductive beams of the MEMS switch 2102. In some embodiments, the protection switch 2102 can directly receive an isolated protection switch control signal corresponding to the protection switch control signal generated by the protection switch control circuit 2114 from the isolator 2106. In some embodiments, the voltage control and supply circuit 2104 can use the switch control signal received from the switch control circuit 2112 (via the isolator module 2106) to generate the protection switch control signal. In some such implementations, the circuit breaker 2100 may not receive protection switch control signals from the protection switch control circuit 2114.

[0241] In some implementations, the actuation voltage provided by the actuation voltage supply 2108 may be 1 to 2 volts, 2 to 3 volts, 3 to 4 volts, 4 to 5 volts, or any range formed by these values ​​or values ​​greater or less.

[0242] In some implementations, the MEMS control signal provided by the MEMS switch control circuit 2112 may be 1 to 2 volts, 2 to 3 volts, 3 to 4 volts, 4 to 5 volts, or have a voltage value within a range defined by any one of these values ​​or a value greater or less than a value.

[0243] In some implementations, the protection control signal provided by the protection switch control circuit 2114 can be 1 to 5 volts, 5 to 10 volts, 10 to 20 volts, 20 to 30 volts, or any range formed by these values ​​or values ​​greater or less.

[0244] In some implementations, the circuit breaker may include an EOS protection device connected between the input terminal 102 pr and the output terminal 104 and an internal isolation reference voltage or an external reference voltage. Figure 21B Another example circuit breaker 2101 is schematically illustrated, which includes a MEMS switch 2002 and an EOS protection device 2005 configured to protect the MEMS switch 2002 from unexpected external transient signals (e.g., when the MEMS switch 2002 is in the open state). In some embodiments, the EOS protection device 2005 may be electrically connected at input port 102 (or output port 104) to a reference potential of the circuit breaker 2101 (e.g., an isolated reference potential, such as...). Figure 11A V in G-IS Between. In various embodiments, the EOS protection device 2005 of circuit breaker 2101 can provide the same or similar protection to the MEMS switch 2002 and the protection switch 2102 as the protection device 2004 of circuit breaker 2100.

[0245] In some embodiments, the MEMS switch 2002 device may be integrated with and / or co-manufactured with an electrical overstress (EOS) protection device 2004 configured to protect the MEMS switch 2002. In some examples, the EOS protection device 2004 may be co-manufactured with the MEMS switch 2002 on a common substrate. In some such examples, the EOS protection device 2004 may be electrically connected to the MEMS switch 2002 via wires formed on or over the common substrate. Advantageously, the MEMS switch 2002 and the EOS protection device 2004 may have corresponding structures that may be co-manufactured from a common layer formed over the substrate. In various embodiments, the EOS protection device 2004 may include a vertical spark gap device or a lateral spark gap device. In various embodiments, at least a portion of the EOS protection device 2004 may be co-manufactured with a portion of the MEMS switch 2002. As described herein, co-manufacturing refers to a manufacturing process in which two or more structures are formed at least partially by common process steps (such as deposition or patterning steps). In these embodiments, the corresponding features produced by co-manufacturing can have a characteristic signature. For example, the structure of the EOS protection device 2004 co-manufactured with the MEMS switch 2002 can have substantially the same physical dimensions as the corresponding structure of the MEMS switch 2002.

[0246] Figure 22A side cross-sectional view of a portion of an example circuit breaker (e.g., circuit breaker 2000) is schematically illustrated. The circuit breaker includes a rocker switch 2201 and a vertical spark gap device having one or more spark gaps configured to generate an arc in the vertical direction. The illustrated vertical spark gap device includes a multi-gap vertical spark gap array 2202 configured to protect the rocker switch 2201 from high-voltage transient signals. In some embodiments, the rocker switch 2201 and the multi-gap vertical spark gap array 2202 may be fabricated on or co-fabricated on a common substrate 2204. In some cases, the substrate 2204 may include a top layer 2204b disposed on a base layer 2204a. In some cases, the top layer 2204b may include wires configured to provide electrical connections between the contact electrodes of the rocker switch 2201 and the multi-gap vertical spark gap array 2202 and input terminals 102 and 104. Furthermore, the top layer 2204b may include wires configured to provide electrical connections between the contact electrodes of the rocker switch 2201 and the control circuit 2018, and wires configured to provide electrical connections between the electrodes of the multi-gap vertical spark gap array 2202. In some cases, the multi-gap vertical spark gap array 2202 may include gas-filled chambers formed on the substrate 2204.

[0247] In some embodiments, the base layer 2204a may include silicon (e.g., a silicon wafer), and the top layer 2204b may include a dielectric (e.g., silicon dioxide). In some embodiments, the rocker switch 2201 may include the rocker switches 100, 150, 300, or 150 described above. Figures 5A to 5B , Figures 6A to 6C The seesaw switch shown describes one or more features, the details of which will not be repeated in this article for the sake of brevity.

[0248] In some embodiments, the spark gap array 2202 may include conductive bridges 2206 or conductive beams disposed above a horizontal main surface of the substrate. The conductive bridges 2206 may be anchored at opposite ends and may include a plurality of upper arc electrodes 2209 protruding from the bottom surface of the conductive bridges 2206 and a plurality of lower arc electrodes 2208 formed on the top surface of the top layer 2204b (e.g., protruding from the top surface), wherein the plurality of top fingers and bottom fingers are configured to form a plurality of arc gaps (spark gaps) in a region below the conductive bridges 2206 and the top surface of the top layer 2204b.

[0249] In some examples, multiple upper arc electrodes 2209 may be electrically connected to each other via a conductive bridge 2206 and connected to one of the input terminal 102 or the output terminal 104, and multiple lower arc electrodes 2208 may be electrically connected to each other and connected to the other of the input terminal 102 or the output terminal 104.

[0250] In some embodiments, the spark gap array 2202 may include a capping layer 2214 that encloses the conductive bridge 2206, the electrode fingers, and the arc gap formed below the conductive bridge 2206 and above the top layer 2204b. The capping layer 2214 may be hermetically sealed to form a gas-filled cavity such that the arc medium of the arc gap formed between the plurality of top electrode fingers comprises a gas or gas mixture having a specified composition and pressure. In some embodiments, the capping layer 2214 may be hermetically sealed to a structure therein such that the gas or gas mixture within its enclosed volume is substantially not mixed with external air. For example, the enclosure may be manufactured under sufficient pressure in an atmosphere other than air such that the cavity inside the capping layer 2204 remains isolated from an internal pressure that is approximately the same as or slightly higher than that of external air. In some embodiments, the capping layer 2214 may be manufactured separately from the substrate 2204 and then bonded or otherwise attached to the substrate 2204 on which the arc gap is formed via one or more hermetically sealed connections. In some embodiments, the cover player 2214 can be configured to protect the seesaw switch 2201 from environmental influences. For example, the cover layer 2214 can suppress contamination and provide a desired atmosphere for the operation of the spark gap array 2202. In some examples, the cover layer may include a sealed chamber filled with a gas (e.g., an inert gas) and configured to maintain the gas pressure within a specified range. In some embodiments, the MEMS switch 2201 and the spark gap array 2202 (e.g., having at least one co-fabricated portion) may be covered by two separate cover layers. In these arrangements, the different cover layers may be configured differently, for example, to provide different atmospheres around the MEMS switch 2201 and the spark gap array 2202.

[0251] In some implementations, at least a portion of the spark gap array 2202 may be fabricated using microelectromechanical systems (MEMS) fabrication techniques in conjunction with corresponding portions of the MEMS switch 2201. For example, the conductive bridge 2206 and the top electrode fingers 2209 may be fabricated using methods employed to fabricate the conductive beam 107. In some examples, the conductive bridge 2206 may be fabricated using an electroplating process (e.g., gold plating). As another example, the capping layer 2204 may be fabricated and bonded to the substrate 2204 using common MEMS fabrication and bonding techniques.

[0252] Circuit breaker circuit system with sensors

[0253] In some implementations, a system including a MEMS switch may include one or more sensors configured to monitor various parameters of the MEMS switch or MEMS switch network, and in some cases, a circuit system (e.g., a circuit breaker) is connected to or includes a MEMS switch or MEMS switch network. For example, one or more sensors may include sensors that measure the current flowing through the MEMS switch, the temperature of the MEMS switch, or other parameters that can be used to determine the operating conditions of the MEMS switch or to determine that the state of the MEMS switch should change (e.g., from an on state to an off state). For example, a temperature sensor may be used to measure and / or estimate the temperature of a MEMS switch in the on state. In response to determining that the temperature is above a threshold, a microcontroller (e.g., Figure 11A The microcontroller 1110 in the middle can send signals to the control circuit (e.g., Figure 11A The control circuit 1101 in the microcontroller provides an actuation control signal to change the state of the MEMS switch to an open state, for example, to protect a core circuit system protected by a circuit breaker circuit system. As another example, a current sensor can be used to measure and / or estimate the current conducted by the MEMS switch when it is in the closed state. In response to determining that the current is higher than a threshold (e.g., the operating current of the MEMS switch), the microcontroller (e.g., ...) provides an actuation control signal to change the state of the MEMS switch to an open state, for example, to protect a core circuit system protected by a circuit breaker circuit system. Figure 11A The microcontroller 1110 in the MEMS switch can provide an activation control signal to the control circuitry to change the state of the MEMS switch to an off state. In various embodiments, at least a portion of the sensor can be integrated with and / or co-fabricated with the MEMS switch on a common substrate. In some embodiments, a system including a MEMS switch (e.g., the system's control circuitry) can include a sensor block configured to receive sensor signals (e.g., analog signals) from a sensor or sensor element and generate processed sensor signals or measured values ​​(e.g., digitized sensor signals or digitized measured values) usable by the microcontroller. In some examples, the sensor block (e.g., sensor readout circuitry) can include an analog-to-digital converter (ADC) configured to receive analog sensor signals from a sensor element and generate digital sensor signals usable by the microcontroller.

[0254] Figure 23An electrical (or electronic) system 2300 or a portion thereof is schematically illustrated, including a MEMS switching module 2302 (e.g., a single MEMS switch or a network of MEMS switches) and control circuitry 2301 configured to control the MEMS switching module 2302. In some embodiments, the MEMS switching module 2302 may include various circuit breakers described above, such as circuit breaker 200. Figure 7 One or more features described. For example, MEMS switch 2302 can be similar to rocker switch 150 ( Figures 2A to 2C ) or seesaw switch 300 ( Figures 3A to 3C The control circuit 2301 may include a configuration similar to that described above for control circuit 1101. Figure 10 , Figure 11A ), 1301 Figure 13 ) or 1801 ( Figure 18 (This refers to one or more features described, and for the sake of brevity, their details may not be repeated in this article.)

[0255] In some embodiments, the electrical system 2300 may be a circuit breaker configured to control the electrical connection between the power supply 902 and a load (e.g., a resistive load with resistor R3) via input terminal 102 and output terminal 104. In some examples, the MEMS switching module 2302 may include one or more rocker switches connected in parallel and / or series. In some embodiments, the electrical system 2300 may include one or both of a temperature sensor 2305 and a current sensor 2304, the temperature sensor 2305 being configured to monitor and measure the temperature of the MEMS switch 1002, and the current sensor 2304 being configured to monitor and measure the current conducted by the MEMS switching module 2302 between input terminal 102 and output terminal 104. In some embodiments, the temperature sensor 2305 and / or the current sensor 2304 may include one or more sensor elements configured to generate one or more analog sensor signals, respectively, indicating the temperature of the MEMS switching module 2302 and / or the current conducted through the MEMS switching module 2302.

[0256] In some embodiments, control circuitry 2301 may include a sensor block or sensor readout circuitry 2307 configured to receive sensor signals (e.g., analog sensor signals) from temperature sensor 2305 and / or current sensor 2304, and generate processed sensor signals that can be used by microcontroller 1110, such as generating control signals that can cause the microcontroller to change the state of MEMS switching module 2302. In some examples, the processed signals may include digital signals (e.g., digitized sensor signals).

[0257] In some embodiments, temperature sensor 2305 may include a first resistor. The resistance of the resistor changes with temperature or temperature coefficient of resistance (TCR). A positive TCR indicates that the resistance of the resistor increases with increasing temperature, as is the case with metallic materials. On the other hand, a negative TCR indicates that the resistance of the resistor decreases with increasing temperature, as is the case with semiconductor materials. The resistor of temperature sensor 2305 may be formed as a thin-film resistor with a positive TCR or a positive TCR. The temperature sensor is positioned close to MEMS switch module 2302, for example, on the same substrate. In some such examples, control circuitry 2307 may include a first amplifier 2306 (e.g., a differential amplifier) ​​configured to generate a sensor signal proportional to the resistance of the first resistor. In some embodiments, temperature sensor 2305 may include a thermoelectric element configured to generate a temperature-dependent signal (e.g., current or voltage) indicating the temperature of the MEMS switch.

[0258] In some embodiments, the current sensor 2304 may include a second resistor connecting the power supply 902 to the MEMS switching module 2302. In some such examples, the sensor block 2307 may include a second amplifier 2308 (e.g., a differential amplifier) ​​configured to generate a sensor signal proportional to the voltage drop across the second resistor, and thus generate a current transmitted via the current sensor 2304 and thereby through the MEMS switching module 2302 when the MEMS switching module is in the ON state. In some embodiments, the current sensor 2304 may include a Hall sensor configured to generate a sensor signal indicating the current transmitted between the power supply 902 and the MEMS switching module 2302. In some embodiments, the current sensor 2304 may be part of a Delta-Sigma measurement system configured to measure the current transmitted between the power supply 902 and the MEMS switching module 2302. In some implementations, sensor block 2307 may include analog-to-digital converter (ADC) 2310, which is configured to receive one or both sensor signals indicating the temperature of the MEMS switch and the current through the MEMS switch, generate corresponding digital sensor signals, and transmit the digital sensor signals to microcontroller 110 via a third isolator 1106c, such that microcontroller 110 receives the isolated digital sensor signals.

[0259] In some implementations, microcontroller 1110 can compare sensor signals (e.g., isolated digital sensor signals) received from control circuitry 2301 to determine whether one or both of the temperature of MEMS switch module 2302, as indicated by the corresponding signal, and the current through the MEMS switch exceed a corresponding predetermined threshold. In some cases, the predetermined threshold (e.g., threshold current and / or threshold temperature) can be stored in non-transitory memory of microcontroller 1110. For example, after microcontroller 1110 determines that the temperature sensed from temperature sensor 2305 (e.g., the indicated sensor signal) exceeds the predetermined threshold temperature, microcontroller 1110 can activate MEMS switch module 2302 by changing the state of the MEMS switch from an on state to an off state, for example, by tilting the beam of seesaw switch 1002 to connect the first end of beam 107 to the rear contact electrode 106 and disconnect the second end of beam 107 from the front contact electrode 106. As another example, after the microcontroller 1110 determines that the current sensed from the current sensor 2304 (e.g., the indicated sensor signal) exceeds a predetermined threshold current, the microcontroller 1110 can activate the MEMS switch module 2302 by changing the state of the MEMS switch from the on state to the off state.

[0260] In some embodiments, one or both of the temperature sensor 2305 and the current sensor 2304 may be fabricated or disposed on a substrate on which at least a portion of the MEMS switch module 2302 (e.g., at least one of a plurality of MEMS switches) is formed. In some such embodiments, one or both of the temperature sensor 2305 and the current sensor 2304 may be co-fabricated with at least a portion of the MEMS switch module 2302 (e.g., a portion of the MEMS switch therein). In some examples, one or more thin-film based sensors may include a thin-film resistor patterned from the same layer as one or more of the first contact electrode 106 and the second contact electrode 109 or one or more of the first control electrode 108 and the second control electrode 110. In some such examples, the thin-film resistor may have the same thickness as one or more of the first contact electrode 106 and the second contact electrode 109 or one or more of the first control electrode 108 and the second control electrode 110.

[0261] In some implementations, sensor block 2307 can provide an isolator with a processed sensor signal generated using sensor signals received from temperature sensor 2305 and current sensor 2304, the isolator being configured to provide isolated, processed sensor signals to microcontroller 1110. In some examples, the isolator can be, for example, a third isolator 1106c of isolator circuit 1106 (mentioned above). Figure 11A and Figure 18 The described unit further includes a first isolator 1106a, a second isolator 1106b, and a fourth isolator 1106d, which are respectively configured to isolate the supply voltage, the MEMS switch control signal, and the protection switch control signal.

[0262] Figures 24A to 24B A top view schematically illustrating an example MEMS switch 2400 (e.g., a MEMS switch in a MEMS switch module 2302) including one or more integrated sensors is shown. Figure 24A ) and side view section ( Figure 24B In some cases, the MEMS switch 2400 can be a rocker switch, which includes the features described above. Figures 6A to 6C The illustrated seesaw switch describes one or more features. In some cases, the MEMS switch 2400 may be formed on a top layer 2401 of a substrate (e.g., a chip or wafer). In some such cases, an integrated sensor may be formed or disposed on the top surface of or within the top layer 2401. In some cases, the integrated sensor may include a resistor 2402 formed on or above the top layer 2401, wherein the resistor 2402 may be connected to a readout circuit (e.g., sensor block 2307) via a wire 2412. In various embodiments, the wire 2412 may be formed on, above, or within the top layer 2401. In the example, at least a portion of the wire 2410 may be formed within the top layer 2401. In some cases, the integrated sensor may include a resistor 2404 formed within the top layer 2401 (below the top surface), and the resistor 2404 may be connected to a readout circuit (e.g., sensor block 2307) via a wire 2410 formed at least partially within the top layer 2401. In examples, the resistor 2404, and in some cases, the wire 2410, may be co-fabricated with another wire or conductive via (e.g., conductive via 2413) connected to a control electrode of the MEMS switch 2400 (e.g., the front control electrode 110 or rear control electrode 108 of a seesaw switch). In some examples, the resistor 2404 may comprise polysilicon. In some other examples, the resistor 2404 may comprise metal. In some examples, the resistor 2404 may be co-fabricated with via 2413 by depositing and patterning a polysilicon layer during the formation of the top layer 2401. In some examples, the wire 2412 may comprise polysilicon or metal.

[0263] Figure 25This is a block diagram illustrating an example circuit breaker 2500, which includes a MEMS switching module 2302, a protective switch 2102, an EOS protection device 2004 (described above with respect to FIG. 21), a temperature sensor 2305, and a current sensor 2304. In some embodiments, the circuit breaker 2500 may include signal control and processing circuitry 2504 and isolator circuitry 1106. In some embodiments, the signal control and processing circuitry 2504 may be configured to generate a control voltage using an isolated signal received from isolator circuitry 1106 and to process sensor signals received from temperature sensor 2305 and current sensor 2304. In some embodiments, isolator circuitry 1106 may receive one or more of an actuation supply voltage 2108, a MEMS control signal, and a protective switch control signal, and provides one or more of the isolated supply voltage, the isolated MEMS control signal, and the isolated protective switch control signal to signal control and processing circuitry 2504. In some examples, the isolator circuit 1106 can be connected to the microcontroller 1110 and the external reference voltage 2110.

[0264] Furthermore, in some cases, the signal control and processing circuitry 2504 can be configured to encrypt sensor signals or isolate control signals. In some embodiments, the signal control and processing circuitry 2504 may include one or more of the following: a sensor readout module 2504a, an actuation and control circuitry (referred to herein as MEMS actuation and control module 2504b), a protection switch control module 2504c, and a processing and analysis module 2504d. In some cases, the MEMS actuation and control module 2504b may include voltage control and supply circuitry 1004, 1104, 1804, and 2104.

[0265] In some implementations, two or more of the isolation circuit 1106, MEMS switch module 2302, MEMS actuation and control module 2504b, sensor readout module 2504a, processing and analysis module 2504d, EOS protection device 2004, and protection switch 2102 may be fabricated on a separate die and, in some cases, contained in a separate package. In some cases, the separate package and / or die may be electrically connected via conductors on a circuit board (e.g., a printed circuit board PCB), and they may be mounted on the circuit board. Figure 26This is a block diagram illustrating an example implementation of the circuit breaker 2500 described above. In the example shown, the isolation circuit 1106, MEMS switch module 2302, MEMS actuation and control module 2504b, sensor readout module 2504a, processing and analysis module 2504d, EOS protection device 2004, and protection switch 2102 are fabricated on separate dies, and the protection switch control module is included in the MEMS actuation and control module 2504b.

[0266] Figure 27A This is a perspective view of an example modular circuit breaker 2700, which includes six MEMS switch modules 2302, six MEMS actuation and control modules 2504b, an isolator circuit 1106, a sensor readout module 2504a, a processing and analysis module 2504d, an EOS protection device 2004, and a protection switch 2102, each fabricated on a separate die. In some cases, the sensor readout module 2504a, the EOS protection device 2004, the isolator circuit 1106, and the protection switch 2102 may each be contained in a separate package. In some cases, each MEMS switch module 2302 may be controlled by a MEMS actuation and control module 2504b integrated with (e.g., mounted on and connected to) the MEMS switch module. In some cases, the sensor readout module 2504a, the EOS protection device 2004, the isolator circuit 1106, the protection switch 2102, and each of the six MEMS modules (and the corresponding MEMS switch control module thereon) can be mounted on a separate area of ​​the circuit board 2702 and can be connected by wires formed on and / or within the circuit board 2702 to form a modular circuit breaker 2700.

[0267] Figure 27B This is a perspective view of another example modular circuit breaker 2720 including six MEMS switch modules 2302, each MEMS switch module 2302 integrating a MEMS actuation and control module 2504b and an isolator circuit 1106. In some embodiments, at least the MEMS switch modules 23024 and the isolator circuit 1106 may be fabricated on separate dies and contained in separate packages. In some cases, the MEMS switch modules 2302 and the isolator circuit 1106 may be mounted on separate areas of a circuit board 2702 and may be connected by wires formed on and / or within the circuit board 2704 to form the modular circuit breaker 2720.

[0268] Figure 27CThe internal circuitry and components of a separate MEMS switch module 2302 connected to the corresponding MEMS actuation control module 2504b are schematically illustrated. In some embodiments, the MEMS switch module 2302 may include a MEMS switch network (e.g., Figure 8 The circuit breaker 200 shown has a MEMS switching network, and the MEMS actuation and control module 2504b may include voltage control and supply circuits 1004, 1104, 1804 and 2104.

[0269] In some implementations, MEMS switches can be actuated using mechanisms different from the electrostatic or capacitive actuation described above (e.g., cantilever-based switches or rocker switches). In some such implementations, alternative actuation mechanisms can be used to change the switching voltage (V) of the MEMS switch. S It is essentially independent of the voltage switched by the MEMS switch, and thus eliminates the need to provide a differential reference voltage to the voltage control and supply circuitry that actuates the MEMS switch (as mentioned above). Figure 10 and Figure 11A In some cases, alternative actuation mechanisms not based on electric field control can improve the isolation of MEMS switch operation from surrounding circuitry and devices that may communicate directly (e.g., via conductive connections) or indirectly (e.g., via electric field coupling) with the MEMS switch. In some embodiments, the MEMS switch can be actuated using magnetic force generated by the interaction between a magnetic field and a magnetic material (e.g., a ferromagnetic material). In some such embodiments, the main beam of the MEMS switch (e.g., conductive beams 105, 107, and 407) may contain a magnetic material that can interact with a magnetic field applied to the beam by a magnetic actuator to pull the beam toward the substrate. In various embodiments, the magnetic material may be confined in one or more regions of the beam (e.g., a region near the magnetic actuator) or distributed across the entire structure of the beam. In some cases, the beam may include a magnetic region configured to interact with a magnetic field to actuate the beam and a conductive region configured to establish a conductive path between one or both ends of the beam and a conductive post through which the beam is anchored to the substrate. For example, a beam may include a primary magnetic structure (e.g., formed by patterning and etching a magnetic layer) and wires disposed on (or formed within) the primary magnetic structure. In some examples, the beam may include a magnetic layer made of a ferromagnetic material and a conductive layer made of a conductive material.

[0270] In some examples, the magnetic actuator may include a coil configured to generate a magnetic field near or at a region of the beam comprising a magnetic material in response to receiving current from a control circuit. In some cases, when the current flowing through the coil exceeds the switching current (I0), SWhen the magnetic field generated interacts with the magnetic region of the beam, it can pull down the section of the beam near the magnetic actuator, causing the state of the MEMS switch to change from the off state to the on state, or vice versa.

[0271] Figure 28A An example of a magnetically actuated MEMS switch 2800 including a hybrid beam 2802 comprising a magnetic (e.g., ferromagnetic) region and a conductive region is schematically illustrated. In some cases, the beam 2802 may be configured to be actuated by a magnetic field and provide a conductive path (e.g., via a conductive hinge 2803) between at least one contact electrode 2806 and a conductive post 2804 when the MEMS switch is in the ON state. In various embodiments, the MEMS switch 2800 may include a cantilever-based MEMS switch having a single contact electrode 2806 and a magnetic actuator on one side of the post 2804; or a seesaw MEMS switch having a front contact electrode 2806 and a rear contact electrode 2808 and two magnetic actuators on opposite sides of the post 2804 in the longitudinal direction (e.g., along the beam). In some examples, magnetic actuators 2810, 2812 may include conductive structures (e.g., coils, helices, rings, etc.) configured to generate a magnetic field having a component perpendicular to the substrate on which the MEMS switch 2800 is fabricated. In various embodiments, magnetic actuators 2810 (or 2812) may be formed on the substrate or may be embedded in the substrate below the top main surface of the substrate. In some embodiments, at least the region of the hybrid beam 2802 located above the magnetic actuators 2810, 2812 may contain a magnetic material.

[0272] Figure 28B A schematic side cross-sectional view of a magnetoactuated cantilever-based MEMS switch fabricated on a substrate 2805 is illustrated. The MEMS switch includes a hybrid beam 2807 mechanically and electrically connected to conductive posts 2804, and a magnetic actuator 2814 formed below the main top surface of the substrate 2805. In some examples, the magnetic actuator 2814 may include a conductive spiral formed in a plane substantially parallel to the main top surface of the substrate 2805 and configured to generate a magnetic field that can pull the hybrid beam 2807 downward toward the substrate 2805 to establish a conductive path between contact electrodes 2806 and posts 2804.

[0273] Figure 28CA side cross-sectional view of a magnetically actuated seesaw MEMS switch fabricated on a substrate 700 is schematically illustrated. The seesaw MEMS switch includes a hybrid beam 2818 mechanically and electrically connected to a conductive post 2804 via a hinge 2803, and two magnetic actuators 2816a, 2816b formed on the top main surface of the substrate 700. In some embodiments, the seesaw MEMS switch may include the features described above. Figure 1B , Figures 3A to 3C and Figure 5A The seesaw switch shown in Figure 5 describes one or more features. In some examples, the magnetic actuators 2816a, 2816b may include conductive spirals formed on the top main surface of the substrate 700 and configured to generate a magnetic field that can pull a corresponding portion of the hybrid beam 2818 downward toward the substrate 700 to establish a conductive path between the front contact electrode 109 (or the rear contact electrode 106) and the post 2804. In some examples, the hinge 2803 and the post 2804 may contain conductive material. In some examples, the hinge 2803 may contain the same magnetic material used to form the hybrid beam 2818 and additionally include conductive regions configured to electrically connect the conductive regions of the hybrid post to the conductive regions of the post 2804.

[0274] In various embodiments, the magnetic material used in the structure of the hybrid beams 2807, 2818 may include a ferromagnetic material configured to interact with a magnetic field to generate a magnetic force having a component in a direction perpendicular to the main surface of the substrate 2805 or the substrate 700.

[0275] In some embodiments, the magnetic material may include: permalloy (NiFe), iron-silicon alloy (Fe-Si), neodymium iron boron (NdFeB), ferrite, cobalt (Co), nickel (Ni), iron, AlNiCo (an alloy of aluminum, nickel, and cobalt), permalloy (a nickel-iron alloy), neodymium magnets (e.g., NdFeB), samarium cobalt (SmCo) magnets, or other materials, alloys, or compounds (e.g., ferromagnetic alloys or compounds).

[0276] In some embodiments, the hybrid beams 2807 and 2818 may include a magnetic thin film (e.g., one or more of the magnetic materials described above) formed on the bottom surface (facing the substrates 2805, 700) of the hybrid beams 2807 and 2818.

[0277] Example Implementation Plan

[0278] Various additional exemplary embodiments of this disclosure can be described through the following examples:

[0279] Example 1

[0280] Example 1. A microelectromechanical (MEMS) switch, comprising:

[0281] A conductive beam, anchored to a substrate by conductive posts, the conductive posts serving simultaneously as mechanical pivots and conductive paths between the conductive beam and intermediate electrodes on the substrate; and

[0282] A pair of contact electrodes, the pair of contact electrodes being formed on the substrate at opposite lateral sides of the conductive pillar;

[0283] When the MEMS switch is activated, the conductive beam is configured to tilt, such that one side of the conductive beam contacts one of the pair of contact electrodes to form an additional conductive path.

[0284] The conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

[0285] Example 2. The MEMS switch according to Example 1, wherein the conductive post is configured to be at least 5% closer to the first end than the second end by the length of the conductive beam.

[0286] Example 3. The MEMS switch according to Example 1 further includes a pair of control electrodes formed on the substrate at opposite lateral sides of the conductive post, wherein each of the control electrodes is laterally disposed between the conductive post and a corresponding contact electrode of the pair of contact electrodes.

[0287] Example 4. The MEMS switch according to Example 3, wherein activation of the MEMS switch includes applying a voltage to one of the control electrodes closer to the first end of the conductive beam to generate an electrostatic attraction between one of the control electrodes and the conductive beam.

[0288] Example 5. The MEMS switch according to Example 1, wherein after the MEMS switch is activated, the conductive path and the other conductive path are electrically short-circuited to each other.

[0289] Example 6. The MEMS switch according to Example 5, wherein the additional conductive path extends between the terminal and the intermediate contact electrode.

[0290] Example 7. The MEMS switch according to Example 1 further includes a mechanical stop formed on the bottom surface of the conductive beam and extending toward the substrate, wherein, upon activation of the MEMS switch, the mechanical stop contacts the substrate to substantially limit elastic deformation of one or more of the conductive beam, the conductive post, and the hinge connecting the conductive beam to the conductive post.

[0291] Example 8. The MEMS switch according to Example 7, wherein the portion of the mechanical stop that contacts the substrate includes a curved surface.

[0292] Example 9. The MEMS switch according to Example 1 further includes a mechanical stop formed on the bottom surface of the conductive beam and extending toward the substrate, wherein the mechanical stop is configured to act as a fulcrum when the MEMS switch is activated to substantially limit elastic deformation of the hinge connecting the conductive beam to the conductive post.

[0293] Example 10. The MEMS switch according to Example 1, wherein the MEMS switch is configured as part of a circuit breaker disposed between an input terminal at a first voltage and an output terminal at a second voltage, and configured to allow current to pass through the conductive path and the additional conductive path when activated.

[0294] Example 11. A microelectromechanical (MEMS) switch, comprising:

[0295] A conductive beam, anchored to a substrate by conductive posts, the conductive posts serving simultaneously as mechanical pivots and conductive paths between the conductive beam and intermediate electrodes on the substrate; and

[0296] A pair of contact electrodes, the pair of contact electrodes being formed on the substrate at opposite lateral sides of the conductive pillar;

[0297] When the MEMS switch is activated, the conductive beam is configured to tilt such that one side of the conductive beam contacts one of the pair of contact electrodes to form an additional conductive path, and the conductive path and the additional conductive path become electrically short-circuited with each other.

[0298] Example 12. The MEMS switch according to Example 11, wherein the MEMS switch is configured as part of a circuit breaker disposed between a high-voltage input terminal at a first voltage and a low-voltage output terminal at a second voltage, and is configured to allow current to flow through the conductive path and the additional conductive path when activated.

[0299] Example 13. The MEMS switch according to Example 12, wherein after the MEMS switch is deactivated, one side of the conductive beam is configured to be separated from one of the pair of contact electrodes to form an open circuit between the high voltage input terminal and the low voltage output terminal.

[0300] Example 14. The MEMS switch according to Example 11, wherein the conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

[0301] Example 15. The MEMS switch according to Example 11 further includes a pair of control electrodes formed on the substrate at opposite lateral sides of the conductive post, wherein each of the control electrodes is laterally disposed between the conductive post and a corresponding contact electrode of the pair of contact electrodes.

[0302] Example 16. The MEMS switch according to Example 14, wherein activation of the MEMS switch includes applying a voltage to one of the control electrodes closer to the first end of the conductive beam to generate an electrostatic attraction between one of the control electrodes and the conductive beam.

[0303] Example 17. The MEMS switch according to Example 11 further includes a mechanical stop formed on the bottom surface of the conductive beam and extending toward the substrate, wherein, upon activation of the MEMS switch, the mechanical stop contacts the substrate to substantially limit elastic deformation of one or more of the conductive beam, the conductive post, and the hinge connecting the conductive beam to the conductive post.

[0304] Example 18. A microelectromechanical (MEMS) switch, comprising:

[0305] A conductive beam is anchored to the substrate by conductive posts, which also serve as a mechanical pivot and a conductive path between the conductive beam and an intermediate electrode on the substrate.

[0306] A pair of contact electrodes, the pair of contact electrodes being formed on the substrate at opposite lateral sides of the conductive pillar;

[0307] A mechanical stop is formed on the bottom surface of the conductive beam and extends toward the substrate.

[0308] When the MEMS switch is activated, the conductive beam is configured to tilt such that one side of the conductive beam contacts one of the pair of contact electrodes to form an additional conductive path, and the mechanical stop is configured to substantially suppress elastic deformation of one or both of the conductive beam and the conductive post.

[0309] Example 19. The MEMS switch according to Example 18, wherein when the MEMS switch is deactivated, one side of the conductive beam is separated from one of the pair of contact electrodes, and the mechanical stop is separated from the substrate by a gap.

[0310] Example 20. The MEMS switch according to Example 19, wherein when the MEMS switch is activated, the mechanical stop contacts the substrate.

[0311] Example 21. The MEMS switch according to Example 18, wherein the conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

[0312] Example 22. The MEMS switch according to Example 18, wherein after the MEMS switch is activated, the conductive path and the other conductive path are electrically short-circuited to each other.

[0313] Example 23. The MEMS switch according to Example 18, wherein the MEMS switch is configured as part of a circuit breaker disposed between an input terminal at a first voltage and an output terminal at a second voltage, and is configured to allow current to pass through the conductive path and the additional conductive path when activated.

[0314] Example 2

[0315] Example 1. A circuit breaker circuit system, comprising:

[0316] Input terminals and output terminals;

[0317] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0318] A conductive beam that pivots on a substrate via conductive posts to tilt in opposite directions;

[0319] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar, wherein the first contact electrode is electrically short-circuited to the conductive pillar, and

[0320] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0321] The input terminal, the first contact electrode, and the conductive post are electrically connected together.

[0322] After the MEMS switch is activated, the conductive beam tilts in a first direction such that:

[0323] The first side of the conductive beam is electromechanically coupled to the first contact electrode, and

[0324] The second side of the conductive beam is mechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

[0325] Example 2. The circuit breaker circuit system according to Example 1 further includes a resistor electrically connected to the input terminal and arranged in parallel with the MEMS switch, such that after the MEMS switch is activated, the input terminal is electrically connected to the first contact electrode and the conductive post through the resistor.

[0326] Example 3. The circuit breaker circuit system according to Example 1, wherein after deactivating the MEMS switch, the conductive beam is tilted in a second direction such that:

[0327] The second side of the conductive beam is electromechanically coupled to the second contact electrode, thereby creating a DC path between the input terminal and the conductive post through the conductive beam.

[0328] Example 4. The circuit breaker circuit system according to Example 3, wherein one or both of the activation and deactivation of the MEMS switch includes applying an isolated voltage through an isolated power supply circuit including a transformer.

[0329] Example 5. The circuit breaker circuit system according to Example 3, wherein the conductive beam is electrically connected to an isolated ground, and a first control voltage is provided to the first control electrode relative to the isolated ground, such that the voltage difference between the first control electrode and the conductive beam remains substantially constant in the event of voltage variations at the input terminal.

[0330] Example 6. The circuit breaker circuit system according to Example 1, wherein the conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

[0331] Example 7. The circuit breaker circuit system according to Example 6, wherein the conductive post is configured to be at least 5% of the length of the conductive beam closer to the first end than the second end.

[0332] Example 8. The circuit breaker circuit system according to Example 1 further includes a second MEMS switch, the second MEMS switch being arranged substantially the same as the MEMS switch and connected in series with the MEMS switch, wherein the first contact electrodes of the MEMS switch and the second MEMS switch are electrically short-circuited with each other, and are configured to be connected together to the input terminal after the MEMS switch and the second MEMS switch are activated, and wherein the second contact electrode of the second MEMS switch is directly connected to the output terminal.

[0333] Example 9. A circuit breaker circuit system, comprising:

[0334] Input terminals and output terminals;

[0335] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0336] A conductive beam that is pivoted on a substrate via conductive posts to tilt in opposite directions, wherein the conductive posts are closer to the first end of the conductive beam relative to a second end of the conductive beam opposite to the first end.

[0337] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0338] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0339] After the MEMS switch is activated, the conductive beam tilts in a first direction such that:

[0340] The first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminals together to the first contact electrode, and

[0341] The second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

[0342] Example 10. The circuit breaker circuit system according to Example 9, wherein the conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

[0343] Example 11. The circuit breaker circuit system according to Example 10, wherein the conductive post is configured to be at least 5% of the length of the conductive beam closer to the first end than the second end.

[0344] Example 12. The circuit breaker circuit system according to Example 9, wherein the first contact electrode is electrically short-circuited with the conductive post, and wherein, after the MEMS switch is activated, the first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the conductive post.

[0345] Example 13. The circuit breaker circuit system according to Example 12 further includes a resistor electrically connected to the input terminal and arranged in parallel with the MEMS switch, such that after the MEMS switch is activated, the input terminal is electrically connected to the first contact electrode and the conductive post through the resistor.

[0346] Example 14. The circuit breaker circuit system according to Example 9 further includes a second MEMS switch, the second MEMS switch being arranged substantially the same as the MEMS switch and connected in series with the MEMS switch, wherein the first contact electrode, the MEMS switch, and the second MEMS switch are electrically short-circuited with each other and configured to be commonly connected to the input terminal after the MEMS switch and the second MEMS switch are activated, and wherein the second contact electrode of the second MEMS switch is directly connected to the output terminal.

[0347] Example 15. A circuit breaker circuit system, comprising:

[0348] Input terminals and output terminals;

[0349] A pair of microelectromechanical system (MEMS) switches connected in series, the MEMS switches being electrically connected between the input terminal and the output terminal, wherein each MEMS switch comprises:

[0350] A conductive beam that pivots on a substrate via conductive posts to tilt in opposite directions;

[0351] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0352] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0353] After the pair of MEMS switches are activated, each of the conductive beams tilts such that:

[0354] The first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and

[0355] The second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

[0356] The first contact electrodes of the pair of MEMS switches are electrically short-circuited with each other.

[0357] Example 16. The circuit breaker circuit system according to Example 15, wherein for each of the pair of MEMS switches, the first contact electrode is electrically short-circuited with the conductive post, and wherein upon activation of each of the pair of MEMS switches, the first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal together to the first contact electrode and the conductive post.

[0358] Example 17. The circuit breaker circuit system according to Example 16 further includes a resistor connected in parallel with each of the pair of MEMS switches, such that upon activation, for each of the pair of MEMS switches, the input terminal is electrically connected to the first contact electrode and the conductive post via the resistor.

[0359] Example 18. The circuit breaker circuit system according to Example 17, wherein the resistor connected in parallel with each of the pair of MEMS switches is connected in series to act as a voltage divider between the input terminal and the output terminal when each of the pair of MEMS switches is activated.

[0360] Example 19. The circuit breaker circuit system according to Example 15, wherein after deactivating each of the pair of MEMS switches, the conductive beam is tilted in a second direction such that:

[0361] The second side of each conductive beam in the conductive beam is electromechanically coupled to a corresponding second contact electrode in the second contact electrode, thereby creating a DC path between the input terminal and the output terminal through each conductive post in the conductive pillar and through each conductive beam in the conductive beam.

[0362] Example 20. The circuit breaker circuit system according to Example 15, wherein the conductive beam of each of the pair of MEMS switches is electrically connected to an isolated ground, and a control voltage is provided to the first control electrode relative to the isolated ground, such that for each of the pair of MEMS switches, the voltage difference between the first control electrode and the first contact electrode remains substantially constant in the event of voltage variations at the input terminal.

[0363] Example 3

[0364] Example 1. A circuit breaker system comprising:

[0365] Input terminals and output terminals;

[0366] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0367] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0368] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0369] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0370] After the MEMS switch is activated, the conductive beam tilts in a first direction such that:

[0371] The first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and

[0372] The second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode; and

[0373] An isolation circuit, comprising a first transformer configured to provide an activation voltage to the first control electrode as an isolation voltage for activating the MEMS switch.

[0374] Example 2. The circuit breaker system according to Example 1, wherein the isolation circuit is further configured to provide an isolated ground electrically connected to the conductive beam, and a control voltage is provided to the first control electrode relative to the isolated ground, such that the voltage difference between the first control electrode and the conductive beam remains substantially constant in the event of voltage variations at the input terminal.

[0375] Example 3. The circuit breaker system according to Example 2, wherein after deactivating the MEMS switch, the conductive beam is tilted in a second direction such that:

[0376] The second side of the conductive beam is electromechanically coupled to the second contact electrode, thereby creating a DC path between the second contact electrode and the conductive post through the conductive beam.

[0377] Example 4. The circuit breaker system according to Example 3, wherein the isolation circuit is further configured to provide a deactivation voltage to the second control electrode as an isolation voltage for deactivating the MEMS switch.

[0378] Example 5. The circuit breaker system according to Example 4, wherein the isolation circuit further includes a second transformer configured to provide isolated control signals.

[0379] Example 6. The circuit breaker system according to Example 5 further includes actuation and control circuitry configured to receive the isolated control signal from the second transformer and generate the activation voltage or the deactivation voltage based on the isolated control signal.

[0380] Example 7. The circuit breaker system according to Example 5 further includes a microcontroller connected to the isolation circuit, wherein the isolation circuit further includes a third transformer configured to receive data from a sensor and provide an isolated data signal to the microcontroller, wherein the data indicates the operating conditions or parameters of the MEMS switch.

[0381] Example 8. The circuit breaker system according to Example 1, wherein the first contact electrode is electrically short-circuited with the conductive post.

[0382] Example 9. The circuit breaker system according to Example 1 further includes a resistor electrically connected to the output terminal and the ground potential.

[0383] Example 10. A circuit breaker system comprising:

[0384] Input terminals and output terminals;

[0385] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0386] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0387] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0388] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0389] After the MEMS switch is activated, the conductive beam tilts in a first direction such that:

[0390] The first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and

[0391] The second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the second contact electrode; and

[0392] An isolation circuit comprising a plurality of transformers and configured to maintain a substantially constant voltage difference between the first control electrode and the conductive beam in the event of voltage variations at the input terminals connected to the conductive post.

[0393] Example 11. The circuit breaker system according to Example 10, wherein the plurality of transformers includes a first transformer configured to provide an activation voltage to the first control electrode as an isolation voltage for activating the MEMS switch.

[0394] Example 12. The circuit breaker system according to Example 11, wherein the isolation circuit is further configured to provide an isolated ground connected to the conductive beam, such that a substantially constant voltage difference between the first control electrode and the conductive beam is maintained in the event of voltage variations at the input terminal.

[0395] Example 13. The circuit breaker system according to Example 9, wherein after deactivating the MEMS switch, the conductive beam is tilted in a second direction such that:

[0396] The second side of the conductive beam is electromechanically coupled to the second contact electrode, thereby creating a DC path between the second contact electrode and the conductive post through the conductive beam.

[0397] Example 14. The circuit breaker system according to Example 13, wherein the first transformer is further configured to provide a deactivation voltage to the second control electrode as an isolation voltage for deactivating the MEMS switch.

[0398] Example 15. The circuit breaker system according to Example 14 further includes a microcontroller connected to the isolation circuit, wherein the isolation circuit further includes a second transformer configured to receive control signals from the microcontroller and provide isolated control signals to an actuation and control circuit configured to generate an activation voltage or a deactivation voltage based on the isolated control signals.

[0399] Example 16. The circuit breaker system according to Example 10, wherein the conductive post is closer to the first end of the conductive beam than to the second end of the conductive beam opposite to the first end.

[0400] Example 17. The circuit breaker system according to Example 16, wherein the conductive post is configured to be at least 5% closer to the first end than the second end by the length of the conductive beam.

[0401] Example 18. The circuit breaker system according to Example 10, wherein the first contact electrode is electrically short-circuited with the conductive post.

[0402] Example 19. A circuit breaker system comprising:

[0403] Input terminals and output terminals;

[0404] A pair of microelectromechanical system (MEMS) switches connected in series, the MEMS switches being electrically connected between the input terminal and the output terminal, wherein each MEMS switch comprises:

[0405] A conductive beam that pivots on a substrate via conductive posts to tilt in opposite directions;

[0406] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0407] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0408] After the pair of MEMS switches are activated, each of the conductive beams tilts such that:

[0409] The first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal or the output terminal to the corresponding conductive post, and

[0410] The second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal or the output terminal and the second contact electrode.

[0411] An isolation circuit comprising a plurality of transformers and configured to maintain a substantially constant voltage difference between the first control electrode and the second control electrode and the respective conductive beam in the event of voltage variations at the input terminals connected to the first contact electrode.

[0412] Example 20. The circuit breaker system according to Example 19, wherein the plurality of transformers includes a first transformer configured to provide an activation voltage as an isolation voltage to the first control electrode of each MEMS switch for activating the MEMS switch.

[0413] Example 21. The circuit breaker system according to Example 20, wherein the isolation circuit is further configured to provide an isolated ground connected to the conductive beam, such that the substantially constant voltage difference between the first control electrode and the corresponding conductive beam is maintained in the event of voltage variations at the input terminal.

[0414] Example 22. The circuit breaker system according to Example 21, wherein after deactivating the MEMS switch, the conductive beam is tilted in a second direction such that:

[0415] The second side of the conductive beam is electromechanically coupled to the second contact electrode, thereby creating a DC path between the conductive post and the second contact electrode through the conductive beam.

[0416] Example 23. The circuit breaker system according to Example 20, wherein the first transformer is further configured to provide a deactivation voltage as an isolation voltage to the second control electrode of each MEMS switch for deactivating the MEMS switch.

[0417] Example 4

[0418] Example 1. A circuit breaker circuit system, comprising:

[0419] Input terminals and output terminals;

[0420] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0421] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0422] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0423] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0424] When the MEMS switch is activated, the conductive beam tilts in a first direction, thereby opening the path between the input terminal and the output terminal; and

[0425] A protection switch is electrically connected in parallel with the MEMS switch between the input terminal and the output terminal.

[0426] The protection switch is configured to shunt at least a portion of the current flowing between the input terminal and the output terminal during the activation of the MEMS switch and before the path is opened.

[0427] Example 2. The circuit breaker circuit system according to Example 1, wherein during activation of the MEMS switch, a first side of the conductive beam is electromechanically coupled to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal, wherein during activation, the current flowing through the MEMS switch decreases over a period of 0.1-50 microseconds until the MEMS switch reaches an open-circuit state.

[0428] Example 3. The circuit breaker circuit system according to Example 1, wherein after the MEMS switch is deactivated, the conductive beam is tilted in a second direction, thereby short-circuiting the DC path between the input terminal and the output terminal, wherein the protective switch is configured to shunt at least a portion of the current flowing between the input terminal and the output terminal during the deactivation of the MEMS switch and before the coupling with the second contact electrode on the second side of the conductive beam is completed.

[0429] Example 4. The circuit breaker circuit system according to Example 3, wherein during the deactivation of the MEMS switch, the second side of the conductive beam is electromechanically coupled to the second contact electrode, thereby short-circuiting the path between the input terminal and the output terminal, wherein during the deactivation, the current flowing through the MEMS switch increases over a period of 5-100 microseconds until the MEMS switch reaches a short-circuit state.

[0430] Example 5. The circuit breaker circuit system according to Example 3 further includes a controller circuit system for controlling the protection switch such that, prior to the deactivation and activation of the MEMS switch, the protection switch is activated to shunt a portion of the current flowing between the input terminals.

[0431] Example 6. According to the circuit breaker circuit system of Example 5, the activation of the protection switch includes receiving a protection control signal, and the deactivation and activation of the MEMS switch include receiving a deactivation voltage and an activation voltage, respectively, wherein the deactivation voltage and the activation voltage are delayed by at least 0.1 microseconds relative to the protection control signal.

[0432] Example 7. The circuit breaker circuit system according to Example 1, wherein the protective switch includes at least one field-effect transistor.

[0433] Example 8. The circuit breaker circuit system according to Example 6, wherein the protective switch comprises two field-effect transistors connected in series.

[0434] Example 9. The circuit breaker circuit system according to Example 1, wherein the first contact electrode is electrically short-circuited with the conductive post, thereby electrically connecting the input terminal together with the first contact electrode and the conductive post.

[0435] Example 10. The circuit breaker circuit system according to Example 3, wherein one or both of the activation and deactivation of the MEMS switch includes applying an isolated voltage through an isolated power supply circuit including a transformer.

[0436] Example 11. The circuit breaker circuit system according to Example 1, wherein the first contact electrode is electrically short-circuited with the conductive post.

[0437] Example 12. The circuit breaker circuit system according to Example 1, wherein the conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

[0438] Example 13. A circuit breaker circuit system, comprising:

[0439] Input terminals and output terminals;

[0440] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0441] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0442] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0443] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0444] When the MEMS switch is activated, the conductive beam tilts in the first direction, thereby adjusting the angle between 0.1 and 10. For a period of s seconds, the path between the input terminal and the output terminal is opened until the MEMS switch reaches the open-circuit state; and

[0445] A protection switch is electrically connected in parallel between the input terminal and the output terminal to the MEMS switch.

[0446] Example 14. The circuit breaker circuit system according to Example 13, wherein during the activation of the MEMS switch, a first side of the conductive beam is electromechanically coupled to the first contact electrode, and a second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

[0447] Example 15. The circuit breaker circuit system according to Example 14, wherein the MEMS switch is configured such that during the time period, the contact area between the second side of the conductive beam and the second contact electrode continuously decreases until the second side of the conductive beam is completely electromechanically decoupled from the second contact electrode.

[0448] Example 16. The circuit breaker circuit system according to Example 14, wherein the protection switch is configured to shunt at least a portion of the current flowing between the input terminal and the output terminal during the activation of the MEMS switch and before the path is opened.

[0449] Example 17. The circuit breaker circuit system according to Example 13, wherein the first contact electrode is electrically short-circuited with the conductive post.

[0450] Example 18. A circuit breaker circuit system, comprising:

[0451] Input terminals and output terminals;

[0452] Multiple microelectromechanical system (MEMS) switches are connected in parallel between the input terminal and the output terminal.

[0453] Each of the MEMS switches includes:

[0454] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0455] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0456] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes.

[0457] Upon activation of each MEMS switch, the conductive beam tilts in a first direction, thereby opening the path between the input terminal and the output terminal; and

[0458] A protection switch is electrically connected in parallel with the MEMS switch between the input terminal and the output terminal.

[0459] Example 19. The circuit breaker circuit system according to Example 18, wherein the activation of the MEMS switch occurs between 0.1 and 10. During a time period of s seconds, each MEMS switch in the MEMS switches reaches an open circuit state.

[0460] Example 20. The circuit breaker circuit system according to Example 19, wherein the protection switch is configured to shunt at least a portion of the current flowing between the input terminal and the output terminal during the activation of the MEMS switch and before the path is opened.

[0461] Example 21. The circuit breaker circuit system according to Example 18, wherein the first contact electrode of each MEMS switch in the MEMS switch is electrically short-circuited with the conductive post.

[0462] Example 22. The circuit breaker circuit system according to Example 18, wherein the protective switch includes a field-effect transistor.

[0463] Example 5

[0464] Example 1. A circuit breaker circuit system, comprising:

[0465] Input terminals and output terminals;

[0466] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0467] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0468] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0469] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes; and

[0470] An electrical overstress (EOS) protection device is electrically connected to the MEMS switch between the input terminal and the output terminal.

[0471] In response to an EOS event, the EOS protection device is configured to be activated to provide a shunt current path.

[0472] Example 2. The circuit breaker circuit system according to Example 1, wherein the EOS protection device includes a spark gap structure configured to generate an electric arc in response to the EOS event.

[0473] Example 3. The circuit breaker circuit system according to Example 1, wherein after the MEMS switch is activated, the conductive beam tilts in a first direction, thereby opening the path between the input terminal and the output terminal, and wherein the EOS protection device has an activation voltage lower than the breakdown voltage of the open path.

[0474] Example 4. The circuit breaker circuit system according to Example 3, wherein the breakdown voltage of the open path corresponds to the breakdown voltage between the conductive beam and one of the open circuits of the first contact electrode and the second contact electrode.

[0475] Example 5. The circuit breaker circuit system according to Example 1 further includes a protection switch, which is electrically connected in parallel to the MEMS switch and the EOS protection device.

[0476] Example 6. The circuit breaker circuit system according to Example 5, wherein the protection switch includes a field-effect transistor having a breakdown voltage, and wherein the EOS protection device has an activation voltage lower than the breakdown voltage of the field-effect transistor.

[0477] Example 7. The circuit breaker circuit system according to Example 2, wherein the spark gap structure is manufactured using a semiconductor manufacturing process including photolithography and packaged in a semiconductor package.

[0478] Example 8. The circuit breaker circuit system according to Example 1, wherein the EOS protection device is electrically connected in parallel with the MEMS switch and is configured to provide the shunt current path between the input terminal and the output terminal.

[0479] Example 9. The circuit breaker circuit system according to Example 1, wherein the EOS protection device is electrically connected to the MEMS switch at a first end and electrically connected to a reference voltage at a second end to provide the shunt current path between the input terminal or the output terminal and the reference voltage.

[0480] Example 10. The circuit breaker circuit system according to Example 1, wherein the first contact electrode is electrically short-circuited with the conductive post.

[0481] Example 11. The circuit breaker circuit system according to Example 1, wherein the conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

[0482] Example 12. A circuit breaker circuit system, comprising:

[0483] Input terminals and output terminals;

[0484] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0485] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0486] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0487] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes; and

[0488] A spark gap device, the spark gap device being electrically connected to the MEMS switch and including a pair of conductive arc electrodes separated by a gap.

[0489] Example 13. The circuit breaker circuit system according to Example 12, wherein the spark gap device is electrically connected in parallel to the MEMS switch, and wherein, in response to an EOS event, the spark gap is configured to generate an arc to provide a shunt current path between the input terminal and the output terminal.

[0490] Example 14. The circuit breaker circuit system according to Example 12, wherein after the MEMS switch is activated, the conductive beam is tilted in a first direction, thereby opening the path between the input terminal and the output terminal, and wherein the spark gap has an arc voltage lower than the breakdown voltage of the open path.

[0491] Example 15. The circuit breaker circuit system according to Example 14, wherein the breakdown voltage of the open path corresponds to the breakdown voltage between the conductive beam and one of the open circuits of the first contact electrode and the second contact electrode.

[0492] Example 16. The circuit breaker circuit system according to Example 12 further includes a protection switch, which is electrically connected in parallel with the MEMS switch and the spark gap device.

[0493] Example 17. The circuit breaker circuit system according to Example 16, wherein the protective switch includes a field-effect transistor having a breakdown voltage, and wherein the spark gap device has an activation voltage lower than the breakdown voltage of the field-effect transistor.

[0494] Example 18. The circuit breaker circuit system according to Example 10, wherein the first contact electrode is electrically short-circuited with the conductive post.

[0495] Example 19. The circuit breaker circuit system according to Example 13, wherein the first electrode of the spark gap device is electrically connected to the MEMS switch at a first end, and the second electrode of the spark gap device is electrically connected to a reference voltage at a second end to provide the shunt current path between the input terminal or the output terminal and the reference voltage.

[0496] Example 20. A circuit breaker circuit system, comprising:

[0497] Input terminals and output terminals;

[0498] A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising:

[0499] A conductive beam, which pivots on a substrate via conductive posts to tilt in opposite directions.

[0500] A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar.

[0501] A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes; and

[0502] An electrical overstress (EOS) protection device is electrically connected to the MEMS switch between the input terminal and the output terminal.

[0503] The MEMS switch and the EOS protection device are manufactured on a common substrate using semiconductor manufacturing processes.

[0504] Example 21. The circuit breaker circuit system according to Example 20, wherein the MEMS switch and the EOS protection device have one or more corresponding features that are co-manufactured.

[0505] Example 22. The circuit breaker circuit system according to Example 21, wherein the features that are jointly manufactured have at least one common physical dimension.

[0506] Example 23. The circuit breaker circuit system according to Example 22, wherein the EOS protection device includes a spark gap structure configured to generate an arc in response to the EOS event.

[0507] Example 24. The circuit breaker circuit system according to Example 23, wherein the spark gap structure includes a pair of conductive arc electrodes separated by a gap, wherein the conductive electrodes are configured to generate an arc in a direction substantially perpendicular to the main surface of the common substrate.

[0508] Example 25. The circuit breaker circuit system according to Example 20, wherein the EOS protection device is el...

Claims

1. A circuit breaker circuit system, comprising: Input terminals and output terminals; A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising: A conductive beam that pivots on a substrate via conductive posts to tilt in opposite directions; A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar, wherein the first contact electrode is electrically short-circuited to the conductive pillar, and A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes. The input terminal, the first contact electrode, and the conductive post are electrically connected together. After the MEMS switch is activated, the conductive beam tilts in a first direction such that: The first side of the conductive beam is electromechanically coupled to the first contact electrode, and The second side of the conductive beam is mechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

2. The circuit breaker circuit system of claim 1, further comprising a resistor electrically connected to the input terminal and arranged in parallel with the MEMS switch, such that after the MEMS switch is activated, the input terminal is electrically connected to the first contact electrode and the conductive post through the resistor.

3. The circuit breaker circuit system according to claim 1 or 2, wherein after deactivating the MEMS switch, the conductive beam is tilted in a second direction such that: The second side of the conductive beam is electromechanically coupled to the second contact electrode, thereby creating a DC path between the input terminal and the conductive post through the conductive beam.

4. The circuit breaker circuit system of claim 3, wherein one or both of the activation and deactivation of the MEMS switch comprises applying an isolated voltage via an isolated power supply circuit including a transformer.

5. The circuit breaker circuit system of claim 3 or 4, wherein the conductive beam is electrically connected to an isolated ground, and a first control voltage is provided to the first control electrode relative to the isolated ground, such that the voltage difference between the first control electrode and the conductive beam remains substantially constant in the event of voltage variations at the input terminal.

6. The circuit breaker system according to any one of claims 1 to 5, wherein the conductive post is closer to the first end of the conductive beam than the second end of the conductive beam opposite to the first end.

7. The circuit breaker system of claim 6, wherein the conductive post is configured to be at least 5% of the length of the conductive beam relative to the second end, closer to the first end.

8. The circuit breaker circuit system according to any one of claims 1 to 7, further comprising a second MEMS switch arranged substantially identical to and connected in series with the MEMS switch, wherein the first contact electrodes of the MEMS switch and the second MEMS switch are electrically short-circuited to each other and configured to be commonly connected to the input terminal after the MEMS switch and the second MEMS switch are activated, and wherein the second contact electrode of the second MEMS switch is directly connected to the output terminal.

9. The circuit breaker circuit system according to any one of claims 1 to 8, further comprising an isolation circuit configured to provide an actuation voltage as an isolation voltage to the first control electrode or the second control electrode for activating the MEMS switch.

10. The circuit breaker circuit system of claim 9, wherein the isolation circuit includes an optical isolator, the optical isolator including a light source and a photoelectric power converter.

11. The circuit breaker circuit system according to claim 9 or 10, wherein the isolation circuit comprises a transformer or coupler circuit.

12. The circuit breaker system according to any one of claims 9 to 11, wherein the isolation circuit is further configured to provide an isolated ground electrically connected to the conductive beam, and to provide an actuation voltage to the first control electrode or the second control electrode relative to the isolated ground, such that the voltage difference between the first control electrode or the second control electrode and the conductive beam remains substantially constant in the event of voltage variations at the input terminal.

13. The circuit breaker system according to any one of claims 1 to 12, further comprising a protection switch electrically connected in parallel to the MEMS switch between the input terminal and the output terminal, wherein the protection switch is configured to shunt at least a portion of the current flowing between the input terminal and the output terminal during activation of the MEMS switch and before the path is opened.

14. The circuit breaker system according to any one of claims 1 to 13, further comprising an electrical overstress (EOS) protection device electrically connected between the input terminal and the output terminal of the MEMS switch, wherein the EOS protection device is configured to be activated to provide a shunt current path in response to an EOS event.

15. The circuit breaker system of claim 14, wherein the EOS protection device includes a spark gap structure configured to generate an arc in response to the EOS event.

16. The circuit breaker system according to any one of claims 1 to 15, further comprising a sensor and a microcontroller communicatively coupled to the sensor, wherein the sensor is configured to generate a sensor signal indicating the temperature of the MEMS switch or the current through the conductive beam.

17. The circuit breaker system of claim 16, wherein the microcontroller is configured to activate the MEMS switch after the microcontroller determines that the current sensed from the current sensor exceeds a predetermined threshold.

18. A circuit breaker circuit system, comprising: Input terminals and output terminals; A microelectromechanical system (MEMS) switch, electrically connected between the input terminal and the output terminal, the MEMS switch comprising: A conductive beam that is pivoted on a substrate via conductive posts to tilt in opposite directions, wherein the conductive posts are closer to the first end of the conductive beam relative to a second end of the conductive beam opposite to the first end. A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar. A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes. After the MEMS switch is activated, the conductive beam tilts in a first direction such that: The first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminals together to the first contact electrode, and The second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal.

19. The circuit breaker system of claim 18, wherein the conductive post is closer to the first end of the conductive beam than to the second end of the conductive beam opposite to the first end.

20. The circuit breaker circuit system of claim 19, wherein the conductive post is configured to be at least 5% of the length of the conductive beam relative to the second end, closer to the first end.

21. The circuit breaker circuit system of claim 19 or 20, wherein the first contact electrode is electrically short-circuited with the conductive post, and wherein, upon activation of the MEMS switch, the first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the conductive post.

22. The circuit breaker circuit system of claim 21, further comprising a resistor electrically connected to the input terminal and arranged in parallel with the MEMS switch, such that, upon activation of the MEMS switch, the input terminal is electrically connected to the first contact electrode and the conductive post via the resistor.

23. The circuit breaker circuit system according to any one of claims 18 to 22, further comprising a second MEMS switch, the second MEMS switch being arranged substantially the same as the MEMS switch and connected in series with the MEMS switch, wherein the first contact electrode, the MEMS switch, and the second MEMS switch are electrically short-circuited with each other and configured to be commonly connected to the input terminal after the MEMS switch and the second MEMS switch are activated, and wherein the second contact electrode of the second MEMS switch is directly connected to the output terminal.

24. A circuit breaker circuit system, comprising: Input terminals and output terminals; A pair of microelectromechanical system (MEMS) switches connected in series, the MEMS switches being electrically connected between the input terminal and the output terminal, wherein each MEMS switch comprises: A conductive beam that pivots on a substrate via conductive posts to tilt in opposite directions; A first contact electrode and a second contact electrode are formed on the substrate at opposite lateral sides of the conductive pillar. A first control electrode and a second control electrode are formed on the substrate at opposite lateral sides of the conductive post, wherein each of the first and second control electrodes is laterally disposed between the conductive post and a corresponding one of the first and second contact electrodes. After the pair of MEMS switches are activated, each of the conductive beams tilts such that: The first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminal to the first contact electrode, and The second side of the conductive beam is electromechanically decoupled from the second contact electrode, thereby opening the path between the input terminal and the output terminal. The first contact electrodes of the pair of MEMS switches are electrically short-circuited with each other.

25. The circuit breaker circuit system of claim 24, wherein for each of the pair of MEMS switches, the first contact electrode is electrically short-circuited with the conductive post, and wherein upon activation of each of the pair of MEMS switches, the first side of the conductive beam is electromechanically coupled to the first contact electrode, thereby electrically connecting the input terminals together to the first contact electrode and the conductive post.

26. The circuit breaker circuit system of claim 25, further comprising a resistor electrically connected in parallel with each of the pair of MEMS switches, such that, upon activation, for each of the pair of MEMS switches, the input terminal is electrically connected via the resistor to the first contact electrode and the conductive post.

27. The circuit breaker circuit system of claim 26, wherein the resistor connected in parallel with each of the pair of MEMS switches is connected in series to function as a voltage divider between the input terminal and the output terminal when each of the pair of MEMS switches is activated.

28. The circuit breaker circuit system according to any one of claims 24 to 27, wherein after deactivating each of the pair of MEMS switches, the conductive beam is tilted in a second direction such that: The second side of each conductive beam in the conductive beam is electromechanically coupled to a corresponding second contact electrode in the second contact electrode, thereby creating a DC path between the input terminal and the output terminal through each conductive post in the conductive pillar and through each conductive beam in the conductive beam.

29. The circuit breaker circuit system according to any one of claims 24 to 28, wherein the conductive beam of each of the pair of MEMS switches is electrically connected to an isolated ground, and a control voltage is provided to the first control electrode relative to the isolated ground, such that for each of the pair of MEMS switches, the voltage difference between the first control electrode and the first contact electrode remains substantially constant in the event of voltage variations at the input terminal.

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