Plasma processing apparatus

Abstract

A plasma processing apparatus includes a plasma processing chamber, a plasma generation section that generates plasma in the plasma processing chamber and includes a first matcher, a substrate support section that is disposed in the plasma processing chamber and includes a pedestal and an electrostatic chuck, an edge ring that is disposed on a ring support surface of the electrostatic chuck, a direct current power supply that supplies direct current power to the edge ring, a bias electrode that is provided to the substrate support section, a second matcher that is electrically connected to the bias electrode, a bias power supply that is electrically connected to the second matcher, and a control section that controls to stop matching processing in the first matcher and the second matcher during a period in which the direct current power supply does not apply direct current power to the edge ring.

Description

Technical Field

[0001] This disclosure relates to a plasma processing apparatus. Background Technology

[0002] Patent document 1 discloses a technique for applying a negative DC voltage to an edge ring in order to control the tilt angle of the edge region of a substrate during plasma processing.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2023-043151 Summary of the Invention <Problem to be solved by this invention> This disclosure provides techniques for enabling the matcher to operate stably.

[0004] <Methods for solving problems> According to one aspect of this disclosure, a plasma processing apparatus is provided, comprising: a plasma processing chamber; a plasma generation unit that generates plasma within the plasma processing chamber and includes a first matching unit; a substrate support unit disposed within the plasma processing chamber and including a base and an electrostatic chuck; an edge ring disposed on a ring support surface of the electrostatic chuck; a DC power supply that supplies DC power to the edge ring; a bias electrode disposed on the substrate support unit; a second matching unit electrically connected to the bias electrode; a biasing power supply electrically connected to the second matching unit; and a control unit that controls to stop matching processing in the first matching unit and the second matching unit during periods when the DC power supply does not apply DC power to the edge ring.

[0005] <The Effects of the Invention> This disclosure provides techniques for enabling the matcher to operate stably. Attached Figure Description

[0006] Figure 1 This is a diagram illustrating the configuration of a plasma processing system including the plasma processing apparatus of this embodiment.

[0007] Figure 2 This is a diagram illustrating the configuration of the plasma processing apparatus according to this embodiment.

[0008] Figure 3 This diagram illustrates the processing of the plasma processing apparatus according to this embodiment.

[0009] Figure 4 This diagram illustrates the processing of the plasma processing apparatus according to this embodiment.

[0010] Figure 5 This diagram illustrates the process of generating plasma with a continuous wave in the plasma processing apparatus of this embodiment.

[0011] Figure 6 This diagram illustrates the process of generating plasma using pulse waves in the plasma processing apparatus of this embodiment. Detailed Implementation

[0012] Hereinafter, the embodiments for implementing this disclosure will be described with reference to the accompanying drawings. Note that in this specification and the drawings, repetitive descriptions of substantially the same components are omitted by using the same reference numerals. Note that for ease of understanding, the scales of the parts in the drawings may differ from the actual figures. Deviations to a degree that do not impair the effects of the embodiments are permissible in directions such as parallel, right angle, orthogonal, horizontal, vertical, up and down, and left and right. The shape of the corners is not limited to right angles and may also be rounded. Parallel, right angle, orthogonal, horizontal, and vertical may also include approximately parallel, approximately right angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0013] The following describes an example of the configuration of a plasma processing system. Figure 1 This diagram illustrates the configuration of a plasma processing system, including plasma processing apparatus 1, which is an example of a plasma processing apparatus according to this embodiment.

[0014] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, an exhaust system 40, and a bias voltage supply unit 60. Additionally, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the top (ceiling) of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for discharging gas from the plasma processing space. The side wall 10a is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. In one embodiment, the main body portion 111 includes a base 111A and an electrostatic chuck 111B. The base 111A includes a conductive component. The conductive component of the base 111A functions as a lower electrode as a bias electrode. The electrostatic chuck 111B is disposed on the base 111A. The upper surface of the electrostatic chuck 111B has a substrate support surface 111a. The ring assembly 112 includes one or more annular components. At least one of the one or more annular components is an edge ring (hereinafter referred to as edge ring 112). Additionally, although not shown in the figure, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 111B, the ring assembly 112, and the substrate to a target temperature. The temperature control module may also include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path. Furthermore, the substrate support 11 may also include a heat transfer gas supply section configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a. Note that a bias electrode may also be disposed inside the electrostatic chuck 111B instead of the base 111A.

[0016] The spray head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Additionally, the spray head 13 includes a conductive component. The conductive component of the spray head 13 functions as an upper electrode. Note that, in addition to the spray head 13, the gas inlet may also include one or more side gas injectors (SGIs) mounted on one or more openings formed on the sidewall 10a.

[0017] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to a spray head 13 via a corresponding flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsedizing the flow rate of the at least one process gas.

[0018] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to conductive components of the substrate support 11 and / or the spray head 13. As a result, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the conductive components of the substrate support 11, a bias potential can be generated on the substrate W, thereby introducing ionic components from the formed plasma into the substrate W.

[0019] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to a conductive component of the substrate support 11 and / or a conductive component of the spray head 13 via at least one impedance matching circuit (an example of a first matching circuit), and is configured to generate a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive components of the substrate support 11 and / or the conductive components of the spray head 13. The second RF generation unit 31b is coupled to a conductive component of the substrate support 11 via at least one impedance matching circuit (an example of a second matching circuit), and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate a plurality of bias RF signals with different frequencies. One or more of the generated bias RF signals are supplied to the conductive components of the substrate support unit 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0020] Alternatively, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to a conductive component of the substrate support 11 and is configured to generate a first DC signal. The generated first DC signal is applied to the conductive component of the substrate support 11. In one embodiment, the first DC signal may also be applied to other electrodes, such as electrodes within an electrostatic chuck. In one embodiment, the second DC generating unit 32b is connected to a conductive component of the spray head 13 and is configured to generate a second DC signal. The generated second DC signal is applied to the conductive component of the spray head 13. In various embodiments, at least one of the first DC signal and the second DC signal may be pulsed. Furthermore, the first DC generating unit 32a and the second DC generating unit 32b may be added outside the RF power supply 31, and the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0021] The exhaust system 40 can be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted via the pressure regulating valve. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination thereof.

[0022] The bias voltage supply unit 60 supplies DC power to the edge ring 112. The bias voltage supply unit 60 includes a DC power supply 61 and a filter 62. The DC power supply 61 supplies a constant negative voltage relative to the bias voltage to the edge ring 112. To ensure that the DC power supply 61 supplies a constant negative voltage relative to the bias voltage to the edge ring 112, the bias voltage supply unit 60 stops supplying bias power and measures the bias voltage. The filter 62 attenuates high-frequency signals to prevent high-frequency signals from the power supply 30 from being input to the DC power supply 61.

[0023] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the components of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may, for example, include a computer 2a. The computer 2a may, for example, include a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control actions based on a program stored in the storage unit 2a2. The storage unit 2a2 may also include RAM (Random Access Memory), ROM (Read-Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0024] The plasma processing apparatus of this embodiment will be described. The plasma processing apparatus of this embodiment includes: a plasma processing chamber; a plasma generation unit that generates plasma within the plasma processing chamber and includes a first matching unit; and a substrate support unit disposed within the plasma processing chamber and including a base and an electrostatic chuck. Furthermore, the plasma processing apparatus of this embodiment includes: an edge ring 112 disposed on the ring support surface of the electrostatic chuck; a DC power supply that supplies DC power to the edge ring 112; a bias electrode disposed on the substrate support unit; and a second matching unit electrically connected to the bias electrode. The plasma processing apparatus of this embodiment also includes: a bias power supply electrically connected to the second matching unit; and a control unit. The control unit in the plasma processing apparatus of this embodiment controls the matching process in the first and second matching units to stop when the DC power supply is not supplying DC power to the edge ring 112.

[0025] The details of the plasma processing apparatus of this embodiment will be described using the accompanying drawings. Figure 2 This is a diagram illustrating the configuration of plasma processing apparatus 1, which is an example of a plasma processing apparatus according to this embodiment.

[0026] The plasma processing apparatus 1 includes a plasma processing chamber 110, a high-frequency power supply 130, a matching unit 135, a synchronization control unit 150, and a DC power supply 160.

[0027] A high-frequency power supply 130 supplies high-frequency power RF to the plasma processing chamber 110 via a matching unit 135. The high-frequency power RF is, for example, high-frequency power for plasma generation or high-frequency power for biasing. That is, the high-frequency power supply 130 is, for example, a high-frequency power supply for plasma generation (…). Figure 1 The first RF generation unit 31a) or the high-frequency power supply for bias ( Figure 1 The power supply for the second RF generation unit 31b) in the plasma processing chamber. Note that the plasma processing chamber 110, as described above, includes a substrate support unit 11.

[0028] Matching unit 135 performs impedance matching to ensure that the high-frequency power RF supplied to the plasma processing chamber 110 is not reflected and returns to the high-frequency power supply 130. Matching unit 135 is constructed, for example, by an inductor, capacitor, etc. Alternatively, matching unit 135 may also be constructed by a transistor, etc.

[0029] Matcher 135 is, for example, connected to a high-frequency power supply for plasma generation ( Figure 1 The first RF generation unit 31a) or the high-frequency power supply for bias ( Figure 1 The matcher of the second RF generation unit 31b in the middle.

[0030] DC power supply 160 ( Figure 1 The DC power supply 61 in the plasma processing chamber 110 supplies DC power to the edge ring 112.

[0031] The synchronization control unit 150 adjusts the timing of the matching process in the matching unit 135 and the supply of DC power from the DC power supply 160. In other words, the synchronization control unit 150 controls the matching unit 135 and the DC power supply 160 to operate synchronously. To control the matching process in the matching unit 135, the synchronization control unit 150 outputs a control signal SS1 to the matching unit 135. Additionally, to control the supply of DC power to the DC power supply 160, the synchronization control unit 150 outputs a control signal SS2 to the DC power supply 160. Note that synchronization includes not only the case where the control timing of the matching unit 135 is the same as the control timing of the DC power supply 160, but also the case where the control timing of the matching unit 135 is shifted (offset) from the control timing of the DC power supply 160 by a certain time.

[0032] Note that the processing performed by the synchronization control unit 150, for example, is by Figure 1 The control unit 2 in the middle is responsible for execution.

[0033] Next, the processing in the synchronization control unit 150 will be explained. Figure 3 This diagram illustrates the processing in plasma processing apparatus 1, which is an example of a plasma processing apparatus according to this embodiment.

[0034] Figure 3 The horizontal axis represents time, and the vertical axis represents voltage. The intersection of the vertical axis and the horizontal axis represents a reference potential. The reference potential, for example, is ground (GND) level. Figure 3 In this context, DC represents the voltage of the DC power supplied by DC power supply 160. Figure 3 In this context, SS1 represents the control signal SS1 output from the synchronization control unit 150 to the matching unit 135. Figure 3 In this context, SS2 represents the control signal SS2 output from the synchronization control unit 150 to the DC power supply 160. Note that control signal SS1 is an example of the first control signal, and control signal SS2 is an example of the second control signal.

[0035] The DC power is supplied by the DC power supply 160. The DC power supply 160 supplies DC power to the edge ring 112 inside the plasma processing chamber 110 based on the control signal SS2 output from the synchronization control unit 150.

[0036] When the control signal SS2 is high, the DC power supply 160 operates as follows: Figure 3 During period D, the supply of DC power to the plasma processing chamber 110 is stopped. Therefore, as... Figure 3 As shown in the diagram, the DC power supplied to the plasma processing chamber 110 during period A is stopped during period B.

[0037] During periods when the DC power supplied by the DC power supply 160 is stopped (periods B and D), the plasma processing apparatus 1 measures the self-bias voltage of the edge ring 112.

[0038] From the state where DC power (DC) is stopped being applied to the edge ring 112 (time E), the synchronization control unit 150, after a certain period of time (time F) (after the offset time), sets the control signal SS1 to a high level to enable the matching unit 135 to perform matching processing. During the time when the control signal SS1 is high (time G), the matching unit 135 performs matching operation. Note that during the time when the control signal SS1 is low (times E, F, and H), the matching unit 135 stops matching processing to operate with a constant impedance. That is, the matching unit 135 monitors the impedance and performs matching processing during period C.

[0039] The synchronization control unit 150 uses the time TC, which is the sum of time E, time F, time G and time H, as a cycle, and repeats the above processing at each time of time E, time F, time G and time H.

[0040] A more detailed explanation of the plasma processing device is provided. Figure 4 This diagram illustrates the processing in plasma processing apparatus 1, which is an example of a plasma processing apparatus according to this embodiment.

[0041] Figure 4 The horizontal axis represents time, and the vertical axis represents voltage. Figure 4 In this context, Z represents the impedance in the matching circuit 135. Figure 4 In this context, DC represents the voltage of the DC power supplied by DC power supply 160.

[0042] Notice, Figure 4 The symbols A, B, E, F, G, and H marked in the text each correspond to... Figure 3 The symbols in the text.

[0043] In the plasma processing apparatus 1, during the period Pn (indicated by the shaded line), the matching process in the matching unit 135 is stopped. That is, the synchronization control unit 150 in the plasma processing apparatus 1 stops the matching process of the matching unit 135 at least during the period when the DC power supply 160 is not applying DC power DC to the edge ring 112 in the plasma processing chamber 110. The synchronization control unit 150 controls it to, for example, stop connecting to the high-frequency power supply for plasma generation (…). Figure 1The first matching unit of the first RF generation section 31a) and the high-frequency power supply connected to the bias ( Figure 1 The matching process in the second matcher of the second RF generation unit 31b).

[0044] Furthermore, the synchronization control unit 150 controls the matching process in the matcher 135 to be performed within the period Pa (the interval of time G), that is, after a certain time (time F) has elapsed since the state of stopping DC power (time E) (after the offset time), that is, after the margin period. In this embodiment, the period Pa is 1000 μsec. In addition, time H is 1000 μsec, time E is 300 μsec, and time F is 7700 μsec. That is, the period Pn is 9000 μsec. However, the values ​​of period Pa, period Pn, time H, time E, and time F are not limited to these, and the optimal values ​​can be selected according to the conditions of plasma processing. Alternatively, a certain time (time F) and / or a certain time (time H) may not be set. That is, the margin period may not be set. Note that the synchronization control unit 150 controls it to perform matching processes, for example, on at least one of the first matcher connected to the high-frequency power supply for plasma generation (first RF generation unit 31a) and the second matcher connected to the high-frequency power supply for biasing (second RF generation unit 31b).

[0045] Let's explain the more specific processing. First, let's explain the case of supplying high-frequency power with continuous wave. Figure 5 This diagram illustrates the process of generating plasma with a continuous wave in plasma processing apparatus 1, which is an example of a plasma processing apparatus in this embodiment.

[0046] Figure 5 The horizontal axis represents time, and the vertical axis represents voltage. Figure 5 In this context, RF represents the voltage of the high-frequency power RF supplied by the high-frequency power supply 130. Figure 5 In this process, the high-frequency power supply 130 continuously supplies RF power. That is, in Figure 5 In the plasma processing device 1, the control unit 2 generates plasma using continuous waves. Figure 5 In this context, DC represents the voltage of the DC power supplied by DC power supply 160. Figure 5 In this context, SS1 represents the control signal SS1 output from the synchronization control unit 150 to the matching unit 135. Figure 5 SS2 in the text refers to the control signal SS2 output from the synchronization control unit 150 to the DC power supply 160.

[0047] In the case of supplying high-frequency power with continuous wave, through Figure 5 The measurement period Ta1 shown measures the bias voltage. Additionally, in... Figure 5During the matcher monitoring period Pm1, the matcher 135 performs the matching process.

[0048] Next, the case of supplying high-frequency power with pulse waves will be explained. Figure 6 This diagram illustrates the process of generating plasma with pulse waves in plasma processing apparatus 1, which is an example of a plasma processing apparatus in this embodiment.

[0049] Figure 6 The horizontal axis represents time, and the vertical axis represents voltage. Figure 6 In this context, RF represents the voltage of the high-frequency power RF supplied by the high-frequency power supply 130. Figure 6 In this process, the high-frequency power supply 130 intermittently supplies RF power. That is, in Figure 6 In the plasma processing device 1, the control unit 2 generates plasma using pulse waves. Figure 6 In this context, DC represents the voltage of the DC power supplied by DC power supply 160. Figure 6 In this context, SS1 represents the control signal SS1 output from the synchronization control unit 150 to the matching unit 135. Figure 6 SS2 in the text refers to the control signal SS2 output from the synchronization control unit 150 to the DC power supply 160.

[0050] In the case of supplying high-frequency power with pulse waves, through Figure 6 The measurement period Ta2 shown measures the bias voltage. Additionally, in... Figure 6 During the matcher monitoring period in Pm2, the matching process of matcher 135 is performed.

[0051] According to the plasma processing apparatus of this embodiment, the matching device can operate stably. In the plasma processing apparatus, if the DC power supplied to the edge ring 112 changes, the plasma load changes, which may cause the impedance setting of the matching device to become unstable. Therefore, the plasma processing apparatus of this embodiment can ensure stable operation of the matching device by stopping the matching process in the first and second matching devices during the period when the DC power supply is not applying DC power to the edge ring 112.

[0052] In particular, when the measured reflection coefficient is 0.8 or higher, if matching processing is performed when DC power is stopped being applied to the edge ring 112, the impedance variation during the transition period from the application of DC power to its stop and / or from the stop of DC power to its application will be large. This may result in the matching process of the matching device becoming unstable due to insufficient time. However, according to the plasma processing apparatus of this embodiment, even when the reflection coefficient is as high as 0.8 or higher, by stopping the matching process in the matching device during the period when DC power is not applied to the edge ring, the matching process of the matching device can be made to operate stably. Note that according to the plasma processing apparatus of this embodiment, the matching device can operate stably even when the reflection coefficient is less than 0.8. Note that the reflection coefficient can be calculated by at least one of the first and second matching devices using electrical parameters measured by at least one of the first and second matching devices, or it can be calculated by the control unit 2.

[0053] It should be considered that the plasma processing apparatus of this embodiment disclosed herein is illustrative and not restrictive in all respects. The above embodiments can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The items described in the above embodiments can also be configured in other ways and combined without contradiction.

[0054] The plasma processing apparatus disclosed herein is applicable to any type of plasma, including capacitively coupled plasma (CCP), inductively coupled plasma (ICP), microwave-generated plasma, such as plasma generated by a radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP).

[0055] Hereinafter, various exemplary embodiments included in this disclosure are described in (Note 1) to (Note 10).

[0056] (Note 1) A plasma processing apparatus, comprising: Plasma processing chamber; A plasma generation unit that generates plasma within the plasma processing chamber and includes a first matching unit; A substrate support portion is disposed within the plasma processing chamber and includes a base and an electrostatic chuck; An edge ring is disposed on the ring support surface of the electrostatic chuck; A DC power supply that supplies DC power to the edge ring; A bias electrode is disposed on the substrate support portion; A second matching device is electrically connected to the bias electrode; A bias power supply, which is electrically connected to the second matching unit; and Control Department The control unit performs control to stop the matching process in the first matcher and the second matcher during the period when the DC power supply does not apply DC power to the edge ring.

[0057] (Note 2) According to the plasma processing apparatus described in (Note 1), wherein, During the period when the DC power supply applies DC power to the edge ring, the control unit performs a matching process for at least one of the first matcher and the second matcher.

[0058] (Note 3) According to the plasma processing apparatus described in (Note 1) or (Note 2), wherein, After an offset time has elapsed since the DC power supply applied DC power from a state where no DC power was applied to the edge ring, the control unit performs a matching process for at least one of the first matcher and the second matcher.

[0059] (Note 4) The plasma processing apparatus according to any one of (Note 1) to (Note 3), wherein, The control unit supplies a first control signal to at least one of the first matcher and the second matcher, and supplies a second control signal to the DC power supply.

[0060] (Note 5) According to the plasma processing apparatus described in (Note 4), wherein, The plasma processing device also includes a synchronization control unit. The first control signal and the second control signal are output synchronously from the synchronization control unit.

[0061] (Note 6) According to the plasma processing apparatus described in (Note 4) or (Note 5), wherein, At least one of the first matcher and the second matcher performs a matching process when supplied with the first control signal.

[0062] (Note 7) The plasma processing apparatus according to any one of (Note 4) to (Note 6), wherein, The DC power supply stops applying DC power to the edge ring when the second control signal is supplied.

[0063] (Note 8) The plasma processing apparatus according to any one of (Note 5) to (Note 7), wherein, After the offset time has elapsed after the output of the second control signal, the synchronization control unit outputs the first control signal.

[0064] (Note 9) The plasma processing apparatus according to any one of (Note 1) to (Note 8), wherein, When the control unit stops the matching process in the first matcher and the second matcher, the reflection coefficient of the first matcher or the second matcher is 0.8 or higher.

[0065] (Note 10) According to the plasma processing apparatus described in (Note 9), wherein, The reflection coefficient is calculated by any one of the first matcher, the second matcher, and the control unit.

[0066] This application claims priority to Basic Invention Patent Application No. 2024-028047, filed with the Japan Patent Office on February 28, 2024, the entire contents of which are incorporated herein by reference.

[0067] Explanation of reference numerals in the attached figures 1: Plasma processing device 2: Control Department 10: Plasma processing chamber 10s: Plasma processing space 11: Substrate support portion 30: Power supply 31: RF power supply 31a: First RF Generation Unit 31b: Second RF Generation Unit 32: DC power supply 32a: First DC Generator 32b: Second DC generation unit 60: Bias Voltage Supply Section 61: DC power supply 110: Plasma processing chamber 111: Main body 111A: Base 112: Ring Component 130: High-frequency power supply 135: Matcher 150: Synchronization Control Unit 160: DC power supply SS1, SS2: Control signals W: substrate

Claims

1. A plasma processing apparatus, comprising: Plasma processing chamber; A plasma generation unit that generates plasma within the plasma processing chamber and includes a first matching unit; A substrate support portion is disposed within the plasma processing chamber and includes a base and an electrostatic chuck; An edge ring is disposed on the ring support surface of the electrostatic chuck; A DC power supply that supplies DC power to the edge ring; A bias electrode is disposed on the substrate support portion; A second matching device is electrically connected to the bias electrode; A bias power supply, which is electrically connected to the second matching unit; as well as Control Department The control unit performs control to stop the matching process in the first matcher and the second matcher during the period when the DC power supply does not apply DC power to the edge ring.

2. The plasma processing apparatus according to claim 1, wherein, During the period when the DC power supply applies DC power to the edge ring, the control unit performs a matching process for at least one of the first matcher and the second matcher.

3. The plasma processing apparatus according to claim 1 or 2, wherein, After an offset time has elapsed since the DC power supply applied DC power from a state where no DC power was applied to the edge ring, the control unit performs a matching process for at least one of the first matcher and the second matcher.

4. The plasma processing apparatus according to claim 3, wherein, The control unit supplies a first control signal to at least one of the first matcher and the second matcher, and supplies a second control signal to the DC power supply.

5. The plasma processing apparatus according to claim 4, wherein, The plasma processing device also includes a synchronization control unit. The first control signal and the second control signal are output synchronously from the synchronization control unit.

6. The plasma processing apparatus according to claim 5, wherein, At least one of the first matcher and the second matcher performs a matching process when supplied with the first control signal.

7. The plasma processing apparatus according to claim 6, wherein, The DC power supply stops applying DC power to the edge ring when the second control signal is supplied.

8. The plasma processing apparatus according to claim 5, wherein, After the offset time has elapsed after the output of the second control signal, the synchronization control unit outputs the first control signal.

9. The plasma processing apparatus according to claim 1 or 2, wherein, When the control unit stops the matching process in the first matcher and the second matcher, the reflection coefficient of the first matcher or the second matcher is 0.8 or higher.

10. The plasma processing apparatus according to claim 9, wherein, The reflection coefficient is calculated by any one of the first matcher, the second matcher, and the control unit.

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