Plasma processing apparatus, pre-mounting processing apparatus, mounting system, and pre-mounting processing method

Abstract

The present application provides a plasma processing device, a pre-bonding processing device, a mounting system and a pre-bonding processing method which can inhibit the reduction of the bonding strength at the bonding surface of an electronic component and a mounting substrate. The plasma processing device 101 of an embodiment has: a stage 20 which supports a component supply body TW in which a sheet T having a surface with an adhesive portion is supported by a ring R and an electronic component E is adhered to the sheet T; a chamber 10 which is provided with the stage 20 and can be depressurized inside; an exhaust port 60 which exhausts the inside of the chamber 10; a gas introduction port 30 which introduces a reaction gas into the depressurized chamber 10; a plasma generator 40 which plasmaizes the reaction gas; and a control device 200 which plasmaizes the reaction gas by the plasma generator 40, exposes the component supply body TW to the plasma, performs surface processing using the plasma after determining that a volatilization time for volatilizing volatile components from the component supply body TW is ensured, and ends the surface processing after determining that a surface processing time for the electronic component E is ensured.

Description

Technical Field

[0001] This invention relates to a plasma treatment apparatus, a pre-installation treatment apparatus, an installation system, and a pre-installation treatment method. Background Technology

[0002] One method for mounting electronic components, i.e., semiconductor chips, onto a mounting substrate is direct bonding. Direct bonding is a mounting method that directly connects the mounting substrate and the semiconductor chip's terminals without using bonding components such as solder bumps. For example, hydroxyl groups are used to seal the surfaces (protective films such as SiO2 films) of the mounting substrate and the semiconductor chip. By bringing their surfaces into contact and applying pressure and heat, the mounting substrate and the semiconductor chip are bonded together by hydrogen bonds between the hydroxyl groups, eventually transforming into covalent bonds via oxygen atoms. Thus, the terminals of the mounting substrate and the semiconductor chip are diffusely bonded together in a largely integrated manner.

[0003] "Jointing" includes "temporary bonding" and "formal bonding". Temporary bonding is the direct mounting (bonding) of electronic components onto the mounting substrate, while formal bonding refers to the covalent bonding between the temporarily bonded electronic components and the mounting substrate through annealing. In the following description, "temporary bonding" will be referred to as "mounting".

[0004] A semiconductor chip is an electronic component that is miniaturized by dicing and then mounted on a ring. The assembly comprising this miniaturized chip and the ring is called a component supply. The chip on which the electronic component is detached from the component supply is called a mounting substrate.

[0005] In cases where electronic components from a component supplier are directly bonded to a mounting substrate, pre-treatment and cleaning processes are performed on the miniaturized wafer and the mounting substrate prior to this. The pre-treatment includes surface treatment (activation treatment and cleaning treatment). Activation treatment utilizes reactive species such as ions and free radicals generated by plasma atomizing a reactive gas to activate the surfaces of the electronic components and the mounting substrate. Activation treatment involves breaking the chemical bonds of surface molecules, specifically etching the oxide film formed on the surfaces of the electronic components and the mounting substrate, and sealing the surfaces of the electronic components and the mounting substrate using hydroxyl groups. Cleaning treatment utilizes the generated reactive species such as ions and free radicals to clean the surfaces of the electronic components and the mounting substrate. Cleaning treatment involves ejecting and removing particles adhering to the surface or decomposing and removing organic matter.

[0006] In the following description, the activation and cleaning processes performed using plasma are referred to as surface treatment, and the apparatus for performing the surface treatment is referred to as a plasma treatment apparatus. Furthermore, plasma treatment apparatuses can generally perform processes other than surface treatment, and processes including surface treatment performed by plasma treatment apparatuses are broadly referred to as plasma treatment. Additionally, plasma treatment includes depressurization for generating plasma and depressurization for releasing the depressurization. Furthermore, pretreatment is sometimes referred to as pre-mounting treatment. Cleaning is a process that uses liquids such as water to clean particles and other contaminants present on the surfaces of electronic components and mounting substrates; the apparatus for performing this cleaning process is referred to as a cleaning apparatus.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: Japanese Patent Application Publication No. 2020-021966 Summary of the Invention

[0010] The problem that the invention aims to solve

[0011] However, in this direct bonding process, a decrease in bonding strength sometimes occurs at the bonding surfaces of the electronic components and the mounting substrate. This decrease in bonding strength raises concerns about the potential for poor quality in products manufactured through the bonding (mounting) of electronic components to the mounting substrate.

[0012] The purpose of embodiments of the present invention is to provide a plasma processing apparatus, a pre-installation processing apparatus, a mounting system, and a pre-installation processing method that can suppress the reduction of bonding strength at the interface between electronic components and mounting substrates.

[0013] Technical means to solve the problem

[0014] The plasma processing apparatus of this embodiment performs surface treatment on the mating surfaces of the electronic components and the mounting substrate using plasma before mounting the electronic components onto the mounting substrate. The plasma processing apparatus includes: a stage for supporting a component supply body, in which a sheet with an adhesive portion on its surface is supported by a ring and the electronic components are adhered to the sheet; a chamber in which the stage is disposed and capable of depressurizing its interior; an exhaust port for venting gas from the chamber; a gas inlet for introducing reactive gas into the depressurized chamber; a plasma generator for plasmaizing the reactive gas; and a control device that exposes the component supply body to plasma by plasma generator, performs surface treatment using plasma after determining that sufficient evaporation time has been ensured for volatile components to evaporate from the component supply body, and terminates the plasma treatment after determining that sufficient surface treatment time for the electronic components has been ensured.

[0015] The pre-installation treatment apparatus of the embodiment includes: the plasma treatment apparatus; a loading port for loading / unloading the part supply body and the mounting substrate; a supply body cleaning apparatus for cleaning the part supply body; a mounting substrate cleaning apparatus for cleaning the mounting substrate; and a conveying apparatus for conveying the part supply body.

[0016] The mounting system of the embodiment includes: the pre-mounting processing device; and a bonding device for detaching the electronic component processed by the pre-mounting processing device from the component supply body and mounting it on the mounting substrate.

[0017] The pre-installation processing method of this embodiment performs pre-installation processing on the mating surfaces of the electronic components and the mounting substrate before mounting the electronic components onto the mounting substrate. The pre-installation processing method includes the following steps: a loading process, in which a component supply body is loaded into a chamber, wherein a sheet with an adhesive portion on its surface is supported by a ring and the electronic component is adhered to the sheet; a reactive gas introduction process, in which a reactive gas is introduced from a gas inlet; a plasma heating process, in which the introduced reactive gas is plasmaized, exposing the component supply body to the plasma; a determination process, in which the plasma heating process determines that sufficient evaporation time has been ensured for the volatile components to evaporate from the component supply body; and a termination process, in which surface treatment is performed using plasma after the determination process, and the plasma treatment is terminated after determining that sufficient surface treatment time for the electronic components has been ensured.

[0018] The effects of the invention

[0019] Embodiments of the present invention can suppress the reduction of bonding strength at the interface between electronic components and mounting substrate. Attached Figure Description

[0020] [ Figure 1 [ ] is an explanatory diagram showing the processing of each part of the installation system in the implementation method.

[0021] [ Figure 2 [ ] is a simplified perspective plan view showing the structure of the installation system in the implementation method.

[0022] [ Figure 3 [ ] is a cross-sectional view of the plasma processing apparatus according to the embodiment.

[0023] [ Figure 4 [ ] is a simplified structural diagram showing the supply body cleaning device and the mounting substrate cleaning device of the installation system.

[0024] [ Figure 5[A] is a graph showing the pressure change inside the chamber of the plasma processing device. (A) shows the case where the part supply body is subjected to plasma processing, and (B) shows the case where the chamber is empty and the part supply body is subjected to plasma heating processing.

[0025] [ Figure 6 [] is a flowchart representing the action flow of the implementation method.

[0026] [ Figure 7 [Image] is a cross-sectional view of a plasma processing device with a luminescence intensity detector.

[0027] [ Figure 8 [ ] is a cross-sectional view of a plasma processing device with a composition detector.

[0028] [ Figure 9 [] is a cross-sectional view of the stage of a plasma processing device with a heating section.

[0029] [ Figure 10 [ ] is a cross-sectional view of a modified plasma processing apparatus.

[0030] [ Figure 11 [ ] is a simplified perspective plan view of an installation system with multiple joint devices in the mounting section. Detailed Implementation

[0031] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the drawings are schematic diagrams, and the dimensions, proportions, etc., of each part include exaggerated portions for ease of understanding.

[0032] [summary]

[0033] like Figure 1 , Figure 2 As shown, the mounting system 100 of this embodiment is an example of a system for mounting an electronic component E supplied by a component supplier TW onto a mounting substrate BW. The mounting system 100 includes a pre-mounting treatment unit X and a mounting unit Y. The pre-mounting treatment device 300, which carries out the pre-mounting treatment unit X, performs surface treatment (activation treatment, cleaning treatment) on the component supplier TW and the mounting substrate BW before mounting. The bonding device 180, which carries out the mounting unit Y, mounts the electronic component E (semiconductor chip) picked up from the component supplier TW that has undergone pre-mounting treatment onto the mounting substrate BW that has undergone pre-mounting treatment.

[0034] like Figure 1As shown, the component supply body TW is a component in which a sheet T with an adhesive portion on its surface is supported by a ring R, and an electronic component E is adhered to the sheet T. Regarding the component supply body TW of this embodiment, a wafer (semiconductor wafer) W is adhered to the center within the ring R of the sheet T. The wafer W is then miniaturized into the electronic component E. The electronic component E is, for example, a semiconductor chip. The sheet T is a thin, stretchable component containing resin, and its surface is provided with an adhesive portion having adhesive properties. This adhesive portion contains a UV-curable resin whose adhesive strength can be reduced by irradiation with ultraviolet (UV) light. The mounting substrate BW is used to mount (bond) the wafer (semiconductor wafer, substrate) W, which is detached from the component supply body TW.

[0035] The pre-installation processing apparatus 300 performs pre-installation processing on the mating surfaces of the electronic component E and the mounting substrate BW before mounting the electronic component E onto the mounting substrate BW. For example... Figure 2 As shown, the pre-mount processing apparatus 300 of this embodiment can perform pre-mount processing (surface treatment) on each component supply body TW and mounting substrate BW that are housed in a transport container F such as a front-opening unified pod (FOUP) or a front-opening shipping box (FOSB) and supplied from a previous process device. Additionally, the pre-mount processing apparatus 300 may include a cleaning device for cleaning the electronic components E or the mounting substrate BW.

[0036] The installation system 100 is configured by arranging multiple chambers 11b, which house various processing devices, around the base 11a of a box-shaped container that serves as a transport chamber, according to the processing requirements. That is, the pre-installation processing device 300 that supports the pre-installation processing unit X and the joining device 180 that supports the installation unit Y are composed of the chambers 11b that support various processing requirements.

[0037] The configuration includes a fan filter unit (FFU, not shown) installed on the top plate of the substrate 11a, which generates a downflow of clean air, thereby maintaining a clean environment inside the substrate 11a. This FFU may also be installed in the chamber 11b if needed. A conveying device 190 is installed inside the substrate 11a.

[0038] Additionally, a loading port 11c for mounting the transfer container F is provided on the base 11a. The transfer container F, which holds unprocessed part supply bodies TW and mounting substrates BW, is mounted on the loading port 11c. One part supply body TW and one mounting substrate BW are each taken out of the transfer container F by the transfer device 190. The part supply body TW or mounting substrate BW taken out by the transfer device 190 are transferred into, processed, and removed from each chamber 11b.

[0039] The mounting system 100 of this embodiment may have a buffer device for temporarily storing the component supply body TW and the mounting substrate BW. The buffer device may be included in the pre-mounting processing unit X, or it may be included in the mounting unit Y.

[0040] More specifically, the mounting system 100 of this embodiment includes a plasma processing apparatus 101, a supply cleaning apparatus 110, a mounting substrate cleaning apparatus 120, an adjustment processing apparatus 130, a measuring apparatus 140, an alignment apparatus 150, a supply buffer apparatus 160, a mounting substrate buffer apparatus 170, a bonding apparatus 180, a conveying apparatus 190, and a control apparatus 200. Furthermore, the plasma processing apparatus 101, the supply cleaning apparatus 110, the mounting substrate cleaning apparatus 120, the adjustment processing apparatus 130, the measuring apparatus 140, the alignment apparatus 150, the supply buffer apparatus 160, the mounting substrate buffer apparatus 170, the conveying apparatus 190, and the control apparatus 200 constitute the pre-mounting processing section X, and the bonding apparatus 180 and the control apparatus 200 constitute the mounting section Y.

[0041] The plasma treatment apparatus 101 removes volatile components from the component supply body TW. The plasma treatment apparatus 101 performs surface treatment on the component supply body TW and the mounting substrate BW. The component supply body cleaning apparatus 110 cleans the component supply body TW, and the mounting substrate cleaning apparatus 120 cleans the mounting substrate BW. The adjustment treatment apparatus 130 reduces the adhesion of the sheet T of the component supply body TW. The measuring apparatus 140 positions the component supply body TW, and the alignment apparatus 150 positions the mounting substrate BW. The component supply body buffer apparatus 160 temporarily stores the component supply body TW, and the mounting substrate buffer apparatus 170 temporarily stores the mounting substrate BW. The bonding apparatus 180 detaches the electronic component E from the component supply body TW and mounts it onto the mounting substrate BW. The conveying apparatus 190 transports the component supply body TW and the mounting substrate BW between different parts and devices. Then, the control apparatus 200 controls each part of the mounting system 100. Details of each part will be described later.

[0042] [Plasma Processing Device]

[0043] The plasma treatment apparatus 101 is a surface treatment unit that uses plasma to treat the mating surfaces of the electronic component E and / or the mounting substrate BW before mounting the electronic component E onto the mounting substrate BW. Surface treatment is a process that activates and cleans the (mounted) surfaces (matting surfaces) of the electronic component E and the mounting substrate BW. Furthermore, the plasma treatment apparatus 101 also serves as a removal device for removing volatile components from the component supply TW before surface treatment using plasma.

[0044] In this embodiment, the process of exposing the component supply body TW to plasma before surface treatment to remove volatile components volatilized from the component supply body TW is called plasma heating treatment, and the duration of plasma heating treatment is called volatilization time. Furthermore, the process of surface activation and cleaning of the component supply body TW that bonds to the electronic component E is called surface treatment, and the duration of surface treatment is called surface treatment time. Additionally, the process of treating the component supply body TW that includes both plasma heating treatment and surface treatment is called plasma treatment. Moreover, plasma treatment also includes depressurization and pressurization.

[0045] like Figure 3 As shown, the plasma processing apparatus 101 of this embodiment is provided with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60 in a chamber 10 configured as one of the chambers 11b, which is capable of depressurizing the interior. Furthermore, the plasma processing apparatus 101 includes a pressure detector 80 and a temperature detector 74. Additionally, a transfer / inlet port LN for a component supply body TW and a mounting substrate BW is provided in the chamber 10, and the transfer / inlet port LN is configured to be openable and closable via a stop gate SH. Figure 3 In the middle, the door blocking SH is represented by a dashed line.

[0046] (Platform)

[0047] (Platform)

[0048] The stage 20 supports the part supply body TW or the mounting base BW. In this embodiment, the stage 20 holds the part supply body TW or the mounting base BW, which is moved into the chamber 10 via a loading / unloading inlet LN opened by a stop door SH. In this embodiment, the stage 20 is configured as a placement area on the inner bottom surface of the chamber 10. In the following description, the direction from the stage 20 toward the part supply body TW is defined as upward or rising, and the direction from the part supply body TW toward the stage 20 is defined as downward or falling.

[0049] like Figure 3As shown, a drive unit 21 is provided on the stage 20 to raise and lower the part supply body TW or the mounting substrate BW. The drive unit 21 has rods 21a and 21b, and a drive mechanism 21c. Rods 21a and 21b are vertical rod-shaped members that can move up and down and airtightly through the bottom of the chamber 10. Rods 21a are arranged in multiple positions to support the lower surface of the part supply body TW and are used to carry the part supply body TW relative to the chamber 10 for loading and unloading. Rods 21b are arranged in multiple positions to support the lower surface of the mounting substrate BW and are used to carry the mounting substrate BW relative to the chamber 10 for loading and unloading.

[0050] The drive mechanism 21c causes the part supply body TW and the mounting base plate BW to rise and fall by moving the rods 21a and 21b up and down.

[0051] (Gas inlet)

[0052] The gas inlet 30 is an opening for introducing the reaction gas into the depressurized chamber 10. The gas inlet 30 is located on the side of the chamber 10 so that the reaction gas can be introduced upwards onto the stage 20. The gas inlet 30 is connected to the supply device 31 via a pipe 31a.

[0053] The supply device 31 supplies a reactive gas into the chamber 10 through the gas inlet 30. For example, N2 gas is used as the reactive gas. By using the reactive gas, cleaning can be performed to remove organic matter from the surface of the object being processed, and the oxide film formed on the surface of the object being processed can be etched and the surface end caps can be activated using hydroxyl groups. Additionally, the reactive gas is also used to flush the chamber 10. Hereinafter, the space for supplying the reactive gas will be designated as the gas space GA.

[0054] (Plasma generator)

[0055] Plasma generator 40 plasmaizes the reactive gas. This plasmaization generates reactive species such as ions and free radicals. These reactive species are then irradiated onto the surfaces of the component supply TW and the mounting substrate BW, thereby activating or cleaning their respective surfaces. Figure 3 As shown, the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is disposed outside the chamber 10 and at a position corresponding to the upper part of the gas space GA. A window member 11d is disposed in the chamber 10 between the antenna 41 and the gas space GA. The window member 11d is a dielectric material such as quartz. The antenna 41 generates plasma P based on inductive coupling in the gas space GA via the window member 11d by applying a high-frequency voltage.

[0056] Power supply 42 is connected to antenna 41, applying a high-frequency voltage to antenna 41. Matching box 43 is a matching circuit connected between power supply 42 and antenna 41. Matching box 43 stabilizes the discharge of plasma P by matching the impedance of the input and output sides.

[0057] (mask)

[0058] like Figure 3 As shown, a mask 50 is disposed within the chamber 10. The mask 50 exposes the miniaturized wafer W (electronic component E) of the component supply body TW and covers a portion of the ring R and the wafer T. The mask 50 is configured to surround the central miniaturized wafer W within the ring R. More specifically, the mask 50 is an annular member that covers the exposed surface of the wafer T and the upper surface of the ring R, excluding the area where the miniaturized wafer W is attached.

[0059] At the lower part of the mask 50, a plurality of support shafts 50a protrude along the inner side of the outer circumference of the mask 50. The support shafts 50a are inserted into holes 11e provided at the bottom of the chamber 10 in a way that allows them to be raised and lowered. A stop 11f is provided at the upper edge of the hole 11e. The stop 11f is a protrusion formed in a way that restricts the descent of the mask 50 to a predetermined height position. In this embodiment, when the mounting substrate BW is placed on the mask, the stop 11f maintains the height of the mask 50 at the same height as when the mask 50 covers the part supply body TW.

[0060] The mask 50 is configured to be raised and lowered by a drive unit 51. The drive unit 51 has a rod 51a and a drive mechanism 51b. The rod 51a is a vertically oriented rod-shaped member that can move up and down and airtightly through the bottom of the chamber 10.

[0061] Multiple rods 51a are arranged at positions that can support the lower surface of the mask 50. In this embodiment, three rods 51a protrude through holes 11e and contact three support shafts 50a respectively. That is, the hole 11e has a through-hole portion through which the rods 51a pass. Furthermore, in Figure 3 To facilitate understanding of the operation, the support shaft 50a and rod 51a, which are not shown in the actual cross-section, are illustrated. The drive mechanism 51b moves the mask 50 up and down by moving the rod 51a up and down. In addition, another support shaft is forced downward by a force-applying member, which forces the mask 50 downward.

[0062] (Exhaust port)

[0063] like Figure 3As shown, the exhaust port 60 is an opening for discharging gas (e.g., reactant gas) from the chamber 10. In this embodiment, the exhaust port 60 is provided on the side of the chamber 10. The exhaust port 60 is connected to a pressure reducing device 61, such as a vacuum pump, via a pipe 61a. The pressure reducing device 61 reduces the pressure inside the chamber 10 via the exhaust port 60. In addition, reactant gas is discharged from the chamber 10. Furthermore, the pressure reducing device 61 discharges volatile components that evaporate from the part supply TW before surface treatment using plasma within the chamber 10.

[0064] (Pressure detector)

[0065] Pressure detector 80 is a pressure gauge that detects the pressure inside chamber 10. Pressure detector 80 is connected to a detection port 11j located in chamber 10. Furthermore, pressure detector 80 is connected to control device 200 (described later), which controls plasma generator 40 based on the pressure detected by pressure detector 80. Specifically, plasma generator 40 is controlled based on the pressure change calculated using pressure detected by pressure detector 80 (hereinafter referred to as the calculated pressure change). Additionally, pressure detector 80 can also calculate the pressure change and output the calculation result to control device 200.

[0066] (Temperature detector)

[0067] Temperature detector 74 is a thermometer that detects the temperature of the component supply TW within chamber 10, particularly the heating temperature of the component supply TW during the evaporation time. Temperature detector 74 is, for example, a thermocouple. Figure 3 As shown, the temperature detector 74 is inserted into the interior of the chamber 10 from the side in a sealed state. The front end of the temperature detector 74 is positioned between the stage 20 and the mask 50. For example, the front end of the temperature detector 74 is positioned near the ring R of the part supply body TW in a manner that does not interfere with the support shaft 50a, the stop 11f, the rod 21a, the rod 21b, and the robot arm 191a.

[0068] [Supply Body Cleaning Device]

[0069] The supply body cleaning apparatus 110 is a cleaning apparatus for cleaning electronic components E before and / or after plasma treatment performed using the plasma treatment apparatus 101. In this embodiment, the supply body cleaning apparatus 110 is a processing chamber for cleaning the component supply body TW. The supply body cleaning apparatus 110 performs a cleaning process using a liquid such as water to remove particles present on the component supply body TW. In this embodiment, a cleaning liquid L is used to clean particles remaining on the plasma-treated component supply body TW or particles generated during plasma treatment. The cleaning targets are the surfaces of the electronic components E, the adhesion surfaces between the electronic components E, and the surfaces of the sheets T; particles adhering to them are cleaned and removed. Figure 4 As shown, the supply body cleaning device 110 includes: a cleaning chamber 111 (cavity 11b), which is a container for cleaning treatment inside; a support 112 for supporting the part supply body TW; a rotating mechanism 113 for rotating the support 112; a cup 114 for receiving the scattered cleaning liquid L from around the part supply body TW; and a supply unit 115 for supplying the cleaning liquid L.

[0070] The cleaning chamber 111 is provided with an opening 111a for loading / unloading the part supply body TW. The opening 111a is configured to be opened and closed via a stop gate 111b. The part supply body TW is loaded / unloaded relative to the cleaning chamber 111 by the conveying device 190 through the opening 111a opened via the stop gate 111b. At this time, the cup 114 is retracted by a lifting mechanism (not shown). An eccentric pin is included on the upper surface of the support 112 to rotatably hold the outer periphery of the part supply body TW. The supply section 115 is provided with a nozzle 115a for dripping cleaning fluid L and a moving mechanism 115b for moving the nozzle 115a.

[0071] Cleaning is performed by supplying cleaning fluid L to the surface of the part supply body TW, which is held by the eccentric pin of the supported portion 112 through the nozzle 115a and rotated by the rotating mechanism 113. The cleaning fluid L is, for example, deionized water (DIW). In this case, water rinsing is performed while simultaneously imparting hydroxyl groups to the surface of the electronic part E.

[0072] Furthermore, although not shown, the rotation mechanism 113 of the supply body cleaning device 110 includes an extension device. The extension device elongates (expands) the sheet T of the component supply body TW supported by the support portion 112 to increase the spacing between the electronic components E. With this configuration, the supply body cleaning device 110 also cleans particles present in the spacing between the electronic components E.

[0073] [Install substrate cleaning equipment]

[0074] The mounting substrate cleaning apparatus 120 is a cleaning apparatus that cleans the mounting substrate BW before and / or after plasma treatment performed using the plasma treatment apparatus 101. In this embodiment, the mounting substrate cleaning apparatus 120 is a processing chamber for cleaning the mounting substrate BW. The mounting substrate cleaning apparatus 120 performs a cleaning process using a liquid such as water to remove particles present on the mounting substrate BW. In this embodiment, a cleaning solution L is used to clean particles remaining on the plasma-treated mounting substrate BW or particles generated during plasma treatment. The mounting substrate cleaning apparatus 120 and... Figure 4 The supply body cleaning apparatus 110 shown also includes: a cleaning chamber 111, which is a container for cleaning treatment inside; a support 112, which supports the mounting substrate BW; a rotation mechanism 113, which rotates the support 112; a cup 114, which receives the spilled cleaning liquid L from around the mounting substrate BW; and a supply unit 115, which supplies the cleaning liquid L. For example, when DIW is used as the cleaning liquid L, water cleaning can be performed, and hydroxyl groups can be applied to the surface of the mounting substrate BW at the same time.

[0075] [Adjust processing device]

[0076] The adjustment processing device 130 adjusts the sheet T of the cleaned parts supply body TW by irradiating it with UV light to reduce the adhesion of the sheet T. For example... Figure 1 As shown, the adjustment processing apparatus 130 has an irradiation device 131, which irradiates UV light by scanning the entire area below the housed part supply body TW with a UV light source.

[0077] [Measurement Device]

[0078] The measuring device 140 positions the part supply body TW. The measuring device 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the part supply body TW so that the center of the part supply body TW is aligned with a reference position set inside.

[0079] [Alignment device]

[0080] The alignment device 150 positions the mounting substrate BW. The alignment device 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW is aligned with a reference position set inside.

[0081] [Supply body buffer device]

[0082] The supply body buffer device 160 temporarily houses the part supply body TW before it is moved into the engagement device 180. For example... Figure 1As shown, the supply body buffer device 160 has a storage chamber 161, which is capable of stacking and storing multiple component supplies TW at intervals.

[0083] [Installation of substrate buffer device]

[0084] The mounting substrate buffer device 170 temporarily stores the mounting substrates BW before they are moved into the bonding device 180. The mounting substrate buffer device 170 has a storage compartment 171, which is capable of stacking and storing multiple mounting substrates BW at intervals.

[0085] [Connecting device]

[0086] The bonding device 180 is included in the mounting section Y and is a processing chamber that detaches the electronic component E from the component supply body TW processed by the plasma processing apparatus 102 and mounts it on the mounting substrate BW. The bonding device 180 includes a supply mechanism, a pick-up mechanism, and a mounting mechanism (not shown). The bonding device 180 picks up the electronic component E from the component supply body TW, which is moved into the supply mechanism by the conveying device 190, and transfers it to the mounting mechanism. The electronic component E is mounted on the mounting substrate BW, which is moved into the bonding device 180 by the conveying device 190, via the mounting mechanism. Furthermore, as... Figure 1 As shown, the bonding device 180 of this embodiment reverses the picked-up electronic component E and mounts the pre-installation treated surface onto the surface of the pre-installation treated mounting substrate BW.

[0087] [Conveying device]

[0088] The conveying device 190 conveys the part supply body TW and the mounting substrate BW between the loading port 11c and each chamber 11b, between each chamber 11b, between the supply body buffer device 160 and the mounting substrate buffer device 170 and the joining device 180. That is, the conveying performed by the conveying device 190 also includes conveying the part supply body TW and the mounting substrate BW between the pre-installation processing section X and the installation section Y. Figure 2 As shown, the conveying device 190 includes a conveying robot 191 and a moving mechanism 192. The conveying robot 191 is a dual-arm type, with a pair of robotic arms 191a supporting the part supply body TW and the mounting base plate BW respectively. The moving mechanism 192 moves and positions the conveying robot 191 at the loading port 11c, each chamber 11b, and the joining device 180. The robotic arms 191a move the part supply body TW and the mounting base plate BW into and out of each conveying container F, each chamber 11b, and the joining device 180.

[0089] [Control Device]

[0090] The control device 200 is a computer that controls various parts of the mounting system 100. The control device 200 includes: a processor to execute programs; a memory to store various information such as programs or operating conditions; and drive circuits to drive each component. Specifically, the control device 200 controls the plasma processing device 101, the supply cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the measuring device 140, the alignment device 150, the supply buffer device 160, the mounting substrate buffer device 170, the bonding device 180, and the conveying device 190. In other words, the control device 200 is also a computer that controls various parts of the pre-mounting processing unit X and the mounting unit Y.

[0091] Furthermore, the control device 200 initiates plasma heating treatment with the plasma generator 40, determines that sufficient evaporation time is available for the volatile components to evaporate from the component supply TW, and then continues surface treatment using plasma. After determining that sufficient surface treatment time has been available for the electronic component E, the surface treatment ends. Details regarding the operation of the control device 200 will be described later.

[0092] [Regarding the reasons for the decrease in bond strength]

[0093] In direct bonding where electronic components E are directly bonded to the substrate without the use of bonding components such as solder bumps, the bond strength may be reduced. Various factors can affect bond strength, and one contributing factor is insufficient pretreatment before mounting. Specifically, it is believed that factors hindering bonding may remain at the bonding surfaces between the electronic components and the mounting substrate.

[0094] Therefore, factors in the pretreatment process were investigated. Among these, the effect of plasma treatment was studied. The results showed that pressure changes during plasma treatment differed between plasma treatment of the part supply body (TW) and plasma treatment of the mounting substrate (BW). In the plasma treatment of the part supply body (TW), pressure changes that were not observed in the case of plasma treatment of the mounting substrate (BW) occurred towards the end of the surface treatment using plasma.

[0095] Figure 5 An example of pressure change inside chamber 10 during plasma processing in plasma processing apparatus 101 is shown. Figure 5 This is a graph with pressure on the vertical axis and time on the horizontal axis. Surface treatment using plasma is performed in a depressurized environment. Therefore, the chamber 10 is first depressurized, and surface treatment using plasma begins when a predetermined pressure is reached. In this embodiment, the predetermined pressure is referred to as the base pressure.

[0096] Figure 5 (A) indicates the pressure change (displacement) within chamber 10 during plasma treatment of the part supply body TW in the plasma processing apparatus 101. For example... Figure 5 As shown in (A), if the pressure inside chamber 10 is reduced to the base pressure, then plasma-enhanced reactive gas is introduced into chamber 10. By introducing the reactive gas, the pressure inside chamber 10 rises to the surface treatment pressure.

[0097] Moreover, such as Figure 5 As shown by the straight line roughly on the front side in (A), the surface treatment pressure is maintained at a constant level through the balance between exhaust and introduction. In this state, electricity is applied to the reactive gas to ionize it. The part supply body TW, which is transported into the plasma treatment apparatus 101, is surface treated using the active species generated by the plasmaization of the reactive gas. After a predetermined treatment time t0, the surface treatment using plasma is ended. The supply of reactive gas is stopped, and the application of electricity is stopped. Then, the pressure inside the chamber 10 is reduced by continuing to exhaust. Then, exhaust is also stopped and the atmosphere is introduced, thereby increasing the pressure inside the chamber 10 to atmospheric pressure. Thus, the plasma treatment ends.

[0098] Figure 5 In (A), the pressure variation observed at the end of the surface treatment of the part supply body TW is indicated by a circle. This variation in surface treatment pressure was not observed when the mounting substrate BW was surface treated. The inventors of this application focused on the amplitude variation caused by the increase or decrease in pressure during the surface treatment.

[0099] The component supply body TW and the mounting substrate BW have different structures. The component supply body TW is a component on a sheet T mounted on a ring R, on which miniature wafers (semiconductor wafers) W are attached. In contrast, the mounting substrate BW is a substrate containing only semiconductor wafers. The difference lies in the presence or absence of the sheet T. Therefore, it is presumed that pressure variations during the surface treatment of the component supply body TW are caused by the sheet T.

[0100] The adhesive portion of sheet T uses a component that holds the electronic component E and whose adhesiveness disappears when the electronic component E is peeled off during installation. This component uses a curable resin such as a UV-curable resin or a thermosetting resin. During installation, just before the electronic component E is peeled off sheet T, the resin is cured, causing the adhesiveness to disappear. Therefore, it is in an uncured state before this process to hold the electronic component E. Moisture easily dissolves in the uncured resin. Furthermore, sheet T itself is also made of resin and is hygroscopic.

[0101] If a part supply body TW with this type of component is subjected to plasma treatment, firstly, with depressurization, highly volatile adhesive parts, moisture absorbed by the sheet T, water dissolved in the resin, solvent components, and other volatile components begin to evaporate. If surface treatment using plasma begins, the temperature of the part supply body TW rises due to the heat of the plasma. As a result, the temperature of the surface-treated sheet T, or the adhesive parts on its surface, i.e., the hardened resin, gradually rises, and subsequently, moisture absorbed by the sheet T, water or solvent components dissolved in the resin, and the resin components themselves evaporate as gases. Therefore, it is believed that after a certain period of surface treatment, pressure changes are caused by the evaporating gases (volatile components).

[0102] Furthermore, if volatilization occurs from the sheet T or the adhesive portion, i.e., the hardened resin, its temperature decreases due to the heat of vaporization, thus stopping the volatilization. If volatilization stops, volatilization will resume due to the heat of the plasma. It is speculated that vibrational pressure variations are observed through this repetition.

[0103] The reason for the pressure variation that causes the vibration is explained using the following formula. If the pressure inside chamber 10 is set as P, the small amount of gas flowing into chamber 10 (leakage) is set as Le, the amount of volatile components volatilized from the component supply body TW is set as Vo, the amount of reaction gas introduced into chamber 11b is set as RG, and the exhaust volume of pressure reducing device 61 (exhaust device) is set as Ex, then the following relationship (1) holds.

[0104] P = Le + Vo + RG - Ex (1)

[0105] Without volatile components evaporating from the component supply body TW, P = Le + RG - Ex. When the sum of the leakage amount Le and the amount of reactant gas introduced RG is balanced with the exhaust amount Ex, the pressure becomes constant. With volatile components, according to equation (1), the pressure in chamber 10 is higher by Vo than when only reactant gas is introduced.

[0106] The amount of Vo is related to the following four events, which repeatedly increase or decrease.

[0107] (a) As the pressure inside chamber 10 decreases, the boiling point also decreases.

[0108] (b) Boiling point varies depending on the volatile components.

[0109] (c) When the volatile components vaporize, they take away the heat of vaporization from the surroundings (e.g., the sheet T or the adhesive part), thus lowering the ambient temperature.

[0110] (d) Even with the same composition, there are components that are easily volatile and components that are not easily volatile (for example, volatile components adsorbed on the surface or adhesive portion of sheet T are easily volatile, while volatile components adsorbed inside sheet T or adhesive portion are not easily volatile). Therefore, when the inflow rate Le, the inlet rate RG, and the exhaust rate Ex are constant, P varies according to the change in Vo.

[0111] Specifically, according to event (a), the pressure inside chamber 10 decreases, thereby lowering the boiling point of the volatile component, and the volatile component begins to evaporate. If a reactive gas is introduced for surface treatment using plasma, the pressure inside chamber 10 increases, thus raising the boiling point of the volatile component, and the evaporation of the volatile component temporarily stops. Then, the part supply body TW is heated using the heat of the plasma, and the temperature of the sheet T or adhesive portion reaches the boiling point of the volatile component contained in the sheet T or adhesive portion. The volatile component then begins to evaporate from the part supply body TW, and the pressure inside chamber 10 increases. However, according to event (c), the temperature of the sheet T or adhesive portion decreases, thus lowering the temperature of the volatile component. Therefore, the temperature drops below the boiling point as the pressure of the volatile component decreases with the decompression, evaporation stops, and the pressure inside chamber 10 returns to its original level.

[0112] However, as the component supply TW continues to be exposed to the plasma, the temperature rises again, causing the volatile components to begin evaporating again. Through this repetition, the amount of Vo also repeatedly increases and decreases. Furthermore, the events in (b) and (d) are also related, thus within a certain pressure range, different volatile components repeatedly begin and stop evaporating. Therefore, the amount of Vo will repeatedly increase and decrease in a more complex manner. This is expressed as the pressure change per unit time (ΔP / Δt). The greater the amount of volatile component, the greater the pressure change.

[0113] Furthermore, if the evaporation of volatile components continues, the amount of evaporation (Vo) decreases or disappears, therefore P ≒ Le + RG - Ex. Thus, the vibrational pressure change converges.

[0114] The volatile components evaporating from the resin-containing sheet T or adhesive portion of the component supplier TW generally contain carbon. Furthermore, substances with low molecular weight tend to be volatile. It is speculated that if volatile components containing low molecular weight carbon evaporate from the component supplier TW during plasma surface treatment, they are ionized by being introduced into the plasma environment. The ionized volatile components collide with and react with a portion of the surface of the electronic component E. It is speculated that a compound or carbon-containing functional group is formed on a portion of the surface of the electronic component E that reacts with the ionized volatile components; this portion is inert. The compound or carbon-containing functional group cannot be removed even by cleaning with the supplier cleaning device 110. As a result, it is speculated that a decrease in the bonding strength at the interface between the component supplier TW and the mounting substrate BW occurs.

[0115] That is, the reason for the decrease in bonding strength takes into account various factors. One of the factors is that the surface treatment of the part supply body TW using plasma is insufficient, which is considered to be due to the volatiles volatilized from the sheet T or the adhesive part.

[0116] This reduction in joint strength can be attributed to poor pre-treatment procedures. Alternatively, it can be attributed to poor installation procedures.

[0117] Here, in Figure 5 In (B), a dashed line represents the pressure shift during decompression in an empty chamber 10, similar to plasma treatment. Although not illustrated for ease of observation, the pressure shift when the mounting substrate BW is housed in chamber 10 and decompression is performed in the same manner is the same as when chamber 10 is empty. That is, it is the same as the shift shown by the dashed line. In other words, it is confirmed that no evaporation occurs from the mounting substrate BW, from which no vibrational pressure changes were observed during surface treatment.

[0118] [Eliminating obstacles to the connection]

[0119] Based on the above observations and speculations, it can be concluded that to eliminate one of the obstacles to bonding, it is sufficient to remove volatile components from the part supply TW before surface treatment. Therefore, in the plasma treatment apparatus 101 of the pre-treatment device 300 of the mounting system 100 of this embodiment, the evaporation time for removing volatile components from the part supply TW is ensured before the start of surface treatment. In the plasma treatment apparatus 101 of this embodiment, in order to promote the evaporation of volatile components from the part supply TW, the part supply TW is heated by plasma heating treatment in a depressurized chamber 10.

[0120] In other words, to prevent the volatilization of unwanted components during plasma-based surface treatment, the amount of volatile components generated from the component supplier TW is reduced to a level that does not affect the bonding strength before surface treatment. That is, it is not necessary to remove all volatile components. This operation is called a removal process. Furthermore, "not affecting the bonding strength" here means that the bonding strength at the interface between the component supplier TW and the mounting substrate BW will not decrease compared to the required specified strength. The specified strength is the bonding strength obtained when, after temporary bonding during mounting treatment and annealing, the interface between the component supplier TW and the mounting substrate BW is finally bonded in a substantially integrated form via covalent bonds of oxygen atoms. This relationship between bonding strength and volatilization amount can be determined in advance through experiments, etc. The volatilization amount can be observed by the pressure within the chamber 10, as explained below.

[0121] Figure 5(B) Shows an example of the pressure change during depressurization within the chamber 10 of the plasma processing apparatus 101 of this embodiment. As described above, Figure 5 The dashed line in graph (B) represents the pressure change during decompression in an empty chamber 10. Therefore, it represents the pressure change when the chamber 10 does not contain the part supply TW and no volatile components. In this case, surface treatment is not performed using plasma. Figure 5 The solid line in (B) represents the pressure change when the part supply body TW of this embodiment is subjected to plasma treatment.

[0122] Referring to the above Figure 5 The solid line in graph (B) illustrates the shift in pressure inside chamber 10 during plasma processing in the plasma processing apparatus 101 of this embodiment.

[0123] When the part supply body TW is present in chamber 10, i.e., when volatile components are present, the pressure rises due to evaporation. Therefore, the pressure from decompression plus the pressure from evaporation results in a higher pressure. Starting from a pressure reduction of 4000 Pa in chamber 10, the pressure decrease becomes gradual relative to the empty state (dashed line), resulting in slight pressure fluctuations. This is believed to be mainly due to the evaporation of moisture adsorbed on sheet T or the adhesive portion. Therefore, along with the evaporation of moisture, the pressure in chamber 10 decreases. Of course, the volatile components are not limited to moisture; volatile components such as solvents from the resin component are also considered.

[0124] To ensure sufficient evaporation time for the removal of volatile components, a reaction gas is introduced after reaching the base pressure, thereby raising the pressure within chamber 10 to a predetermined pressure. This pressure is the plasma heating treatment pressure. The plasma heating treatment pressure is the pressure at which plasma heating treatment is performed, and it is also the pressure at which the volatile components evaporate. In this embodiment, the plasma heating treatment pressure is set to a pressure lower than the surface treatment pressure. That is, the plasma heating treatment is performed as follows: while maintaining a constant plasma heating treatment pressure lower than the surface treatment pressure within chamber 10, the introduced reaction gas is plasmaified, and the heat from the plasma is used to heat the part supply body TW under reduced pressure. Furthermore, setting the plasma heating treatment pressure lower than the surface treatment pressure is a result of considering the event described in (a). However, the plasma heating treatment pressure may also be set to the same or higher pressure than the surface treatment pressure.

[0125] If, after a certain period of time has elapsed since the start of plasma heating treatment, there is a time range during which the amplitude of pressure increases and decreases within chamber 10 becomes drastic (the amount of pressure change becomes large). At this time, the amount of reactant gas introduced (RG) and the amount of gas exhausted (Ex) are set to a constant, thus generating pressure fluctuations based on the amount of evaporation (Vo). Then, the amount of pressure change within chamber 10 decreases. As described above, the point at which the amount of pressure change decreases is the point at which the amount of volatile components that cannot be evaporated from the component supply TW or the amount of evaporation decreases. In other words, at this point in time, volatile components have been removed from the component supply TW.

[0126] The pressure fluctuation is measured by the pressure detector 80, and the pressure change is calculated in the control device 200. Then, if the calculated pressure change falls within a predetermined range, the control device 200 determines that the evaporation time for removing volatile components has been ensured. The predetermined range of the pressure change is such that the amount of volatile components evaporating from the part supply body TW is such that it will not cause adverse effects during pre-installation treatment (surface treatment). That is, it can be set to an amount that does not affect the bonding strength without requiring complete removal of volatile components. Furthermore, the point in time when the pressure change is reduced to within the predetermined range is called the endpoint.

[0127] Insufficient removal treatment will result in the volatilization of unwanted components during plasma surface treatment, affecting bond strength. Excessive removal treatment, on the other hand, will lead to reduced productivity. Therefore, proper control of the removal treatment endpoint is necessary. That is, the endpoint of the removal treatment is the point in time when the amount of volatile components volatilized from the part feeder TW decreases to a level that does not affect bond strength.

[0128] Therefore, the pressure change at the point in time that the amount of volatile components volatilized from the part supply body TW is reduced to an amount that does not cause adverse effects during surface treatment is used as the endpoint threshold. The pressure change amount that becomes this threshold is used as the set pressure change amount. Figure 5 (B) The white circle on the solid line represents the time point (end point) when the pressure change calculated based on the measured pressure value in chamber 10 is below the set pressure change.

[0129] That is, the endpoint is determined by ensuring the volatilization time. It is also the end point of the plasma heating treatment. The time for performing the plasma heating treatment is set as t1. The method for determining whether the volatilization time has been ensured is to compare the calculated pressure change with a set pressure change to confirm whether the calculated pressure change is below the set pressure change. Furthermore, when comparing the calculated pressure change with the set pressure change, each value is corrected to its absolute value before comparison.

[0130] After the plasma treatment of the component supply unit TW reaches its end, it transitions from plasma heating treatment to surface treatment. Therefore, by further introducing the reactive gas from the gas inlet 30 into the chamber 10b, the pressure within the chamber 10 is increased. This pressure within the chamber 10 then becomes the surface treatment pressure.

[0131] That is, when the control device 200 determines that the evaporation time has been ensured, it adjusts the amount of reactive gas introduced from the gas inlet 30. More specifically, when the control device 200 determines that the evaporation time has been ensured, it increases the amount of reactive gas supplied to the chamber 10 to a surface treatment pressure higher than the plasma heating treatment pressure. Here, when the plasma heating treatment pressure and the surface treatment pressure are the same, the amount of reactive gas introduced remains constant; when it is higher than the surface treatment pressure, the amount of reactive gas introduced is reduced until it reaches the surface treatment pressure. Surface treatment is performed in the chamber 10 with the surface treatment pressure maintained at a constant level. In this case, the volatile components of the part supply TW are removed beforehand, so the volatile components do not evaporate during surface treatment. Therefore, no change in amplitude due to pressure increases or decreases occurs during surface treatment.

[0132] In this embodiment, the control device 200 increases the applied power to the plasma generator 40 when it is determined that the evaporation time has been ensured. That is, during plasma heating treatment, the power applied to the antenna 41 by the power source 42 is weaker than that during surface treatment, and becomes the applied power required for surface treatment after plasma heating treatment.

[0133] That is, the energy in the ions, free radicals, and other active species generated during plasma heating becomes the heating that promotes the volatilization of volatile components from the component feedstock TW, thus minimizing the etching effect. As a result, the impact on the electronic component E can be suppressed during plasma heating. Furthermore, if no impact on the electronic component E is observed, the applied power can be set to be the same as that during surface treatment.

[0134] The control device 200 terminates the plasma treatment when the surface treatment has undergone a predetermined treatment time t0. The surface treatment time t0 can be set to a time sufficient to activate and clean the mating surfaces of the part supply body TW to a level that yields a predetermined bonding strength. This surface treatment time t0 can be determined in advance through experiments, etc.

[0135] After surface treatment, the control device 200 controls various parts of the plasma treatment device 101, stopping the power applied to the antenna 41, stopping the exhaust, and stopping the supply of reactive gas. Figure 5As shown by the solid line in (B), the pressure inside chamber 10 temporarily decreases before exhaust stops, but rises to atmospheric pressure through further atmospheric opening. At this point, the plasma treatment is complete.

[0136] As described above, in the plasma processing apparatus 101 that houses the component supply body TW, volatile components are removed by plasma heating treatment, and then surface treatment is performed using plasma, thereby preventing reactions that would hinder bonding from occurring during surface treatment.

[0137] Furthermore, as Figure 5 As shown by the solid line in (B), there is almost no pressure change within chamber 10 in the short period after the plasma heating process begins. Therefore, if the pressure change calculated immediately after the start of the plasma heating process is compared with the set pressure change, the calculated pressure change is below the set pressure change, raising concerns about ending the plasma heating process. Consequently, there is concern that the removal of volatile components from the component supply TW may become insufficient.

[0138] Therefore, it is preferable to set the timing for starting the detection of the endpoint, i.e., the calculation of the pressure change, is predetermined through experiments. Alternatively, a pressure change larger than the set pressure change, i.e., the evaporation start pressure change, can be set in the control device 200, and the timing for starting the endpoint detection can be set based on its detection. Figure 5 (B) In the solid line shown, the white-colored triangle represents the time point when the pressure change in chamber 10 becomes the pressure change at the start of volatilization.

[0139] The pressure change at the start of evaporation and the set pressure change can be set to the pressure change when the measured pressure value changes above or below the threshold, respectively, by setting a pressure threshold.

[0140] Furthermore, the control device 200 controls the drive unit 51 to switch the position of the mask 50 before and after the evaporation of the volatile component is completed. Before it is determined that the evaporation of the volatile component from the part supply body TW is completed, the mask 50 is moved away from the sheet T to the maximum extent, and when it is determined that the evaporation of the volatile component from the part supply body TW is completed, the mask 50 is moved away from the sheet T to the minimum extent.

[0141] [action]

[0142] In addition to the above Figures 1-5 In addition, refer to Figure 6 The flowchart below explains the operation of the mounting system 100 of this embodiment as described above. A mounting method for mounting electronic components E onto the mounting substrate BW via the following process is also a form of this embodiment. Furthermore, the following description is based on... Figure 6The flowchart shows that each process includes states that occur simultaneously and in parallel.

[0143] like Figure 2 As shown, a transport container F containing a component supply body TW and a transport container F containing a mounting substrate BW are mounted on a loading port 11c. A transport robot 191 receives the component supply body TW from the transport container F in the loading port 11c and transports the component supply body TW to the plasma processing device 101.

[0144] The plasma treatment apparatus 101 removes volatile components from the adhesive portions or sheet T in the part supply body TW (volatile component removal process: step S100). First, the drive unit 51 raises the rod 51a, causing the mask 50 to rise against the force applied by the force-applying member. At this time, the mask 50 is set to the position where it is maximally away from the sheet T. Figure 3 (The state is shown by the dashed line). By raising the mask 50, the mask 50 retracts in a manner that does not obstruct the entry of the manipulator 191a of the transfer robot 191 into the chamber 10. Next, the stop door SH opens, and the manipulator 191a of the transfer robot 191, which supports the part supply body TW, is inserted from the loading / unloading inlet LN. The manipulator 191a positions the part supply body TW above the lever 21a.

[0145] Drive mechanism 21c raises rod 21a, lifting the part supply body TW from robot arm 191a, which then retracts. After robot arm 191a retracts, gate SH closes. Drive mechanism 21c lowers rod 21a, placing the part supply body TW onto stage 20. At this time, rod 51a does not lower, and mask 50 remains raised.

[0146] In this state, the plasma processing apparatus 101 begins heating using the plasma generator 40. That is, the volatile component removal process corresponds to the plasma heating treatment. After the pressure inside the chamber 10 reaches the baseline pressure due to the venting of the pressure reducing device 61, the supply device 31 supplies the reaction gas into the gas space GA. The pressure inside the chamber 10 becomes the plasma heating treatment pressure. In this state, the power supply 42 applies high-frequency power to the antenna 41, thereby generating plasma P in the gas space GA.

[0147] The component supply TW is heated by plasmaizing the reactive gas. The component supply TW is heated by maintaining the plasma heating pressure P, and volatile components evaporate from the component supply TW. The evaporated volatile components, along with the reactive gas, are discharged from the exhaust port 60 by the pressure reducing device 61. Because the mask 50 rises, the area of ​​the sheet T exposed to the plasma P increases, thus shortening the heating time (evaporation time).

[0148] Furthermore, the heating temperature of the component supply body TW in plasma processing is the temperature at which volatile components evaporate from the component supply body TW and is a temperature at which the sheet T or the adhesive portion is not damaged (burned, dissolved, softened, etc.), which is 40°C to 200°C, preferably 40°C to 80°C. The temperature varies depending on the material of the sheet T or the adhesive portion. Therefore, it is preferable to determine this temperature beforehand through experiments, etc.

[0149] After the plasma heating process begins, the pressure detector 80 starts outputting the detected pressure within the chamber 10 to the control device 200. The control device 200 then compares the pressure change calculated based on the pressure detected by the pressure detector 80 with the vaporization start pressure change. Once the calculated pressure change exceeds the vaporization start pressure change, the control device 200 compares the calculated pressure change with a set pressure change.

[0150] In this embodiment, when the calculated pressure change is below a set pressure change, the power supply 42 increases the power applied to the antenna 41, and then surface treatment is performed. That is, after ensuring the evaporation time, the plasma treatment apparatus 101 then activates and cleans the surface of the electronic component E through surface treatment (supply body surface treatment process: step S101). In other words, the supply body surface treatment process is equivalent to the surface treatment described above. In this process, after the control device 200 determines that the evaporation time has been ensured, the power supply 42 increases the power applied to the plasma generator 40 (antenna 41).

[0151] Before increasing the power applied to the antenna 41, the control device 200, such as Figure 3 As shown, the drive unit 51 lowers the rod 51a. When the rod 51a lowers, the mask 50 lowers due to the force applied by the force-applying member. The mask 50 contacts the ring R and stops, covering the ring R and the sheet T. That is, the mask 50 is positioned with minimal separation from the sheet T. Furthermore, increasing the amount of reaction gas supplied from the gas inlet 30 increases the pressure within the chamber 10. Thus, the pressure within the chamber 10 is set as the surface treatment pressure.

[0152] In the surface treatment, active species such as ions and free radicals generated by plasmaizing the reactive gas are used to activate and clean the surface of the electronic component E. The reactive gas is discharged from the exhaust port 60 by the pressure reducing device 61. The active species that are directed toward the outer periphery of the wafer W, i.e., the vicinity between the ring R and the electronic component E, are prevented from contacting the exposed surfaces of the ring R and the wafer T by the mask 50 (indicated by arrows in the figure). Therefore, etching of the exposed surfaces of the ring R and the wafer T by the active species can be suppressed. When the control device 200 determines that the surface treatment time (t0) has elapsed, it ends the surface treatment using plasma treatment.

[0153] After the surface treatment of the part supply body TW, the drive unit 51 raises the rod 51a. The drive unit 51 causes the mask 50 to rise against the force applied by the force-applying member, thereby moving the mask 50 away from the ring R. The part supply body TW is lifted by raising the rod 21a via the drive mechanism 21c. The stop gate SH opens, and the robot arm 191a is inserted through the loading / unloading inlet LN. The drive mechanism 21c lowers the rod 21a, loading the part supply body TW and transferring it to the robot arm 191a, one of the two arms. Then, the robot arm 191a removes the part supply body TW from the loading / unloading inlet LN.

[0154] Furthermore, during the surface treatment of the part supply body TW, the transfer robot 191 receives the mounting substrate BW from the transfer container F to another robotic arm 191a in the twin arms. The transfer robot 191 receives the part supply body TW from the rod 21a of the plasma processing device 101 and passes the mounting substrate BW to the plasma processing device 101. The plasma processing device 101 activates and cleans the surface of the mounting substrate BW by surface treatment using plasma (mounting substrate surface treatment step: step S102).

[0155] The plasma treatment process for mounting substrate BW is the same as the surface treatment process for the supply body. However, when mounting substrate BW, the volatile component removal process, i.e., plasma heating treatment, is not performed; only surface treatment is performed.

[0156] The transfer robot 191 transfers the surface-treated component supply TW to the support 112 of the component cleaning device 110. The component cleaning device 110 rotates the surface-treated component supply TW transferred to the support 112 via the support 112 and the rotation mechanism 113, while simultaneously supplying cleaning fluid L to the component supply TW. This cleans the component supply TW (component cleaning process: step S103). This removes particles generated by the etching effect of the plasma-based surface treatment. Furthermore, at this time, the plate T of the component cleaning device 110 is expanded by the expansion device, and cleaning is performed with the spacing of the electronic components E increased. Cleaning fluid L is supplied for cleaning, followed by high-speed rotation to splatter the cleaning fluid L and allow for drying. After drying, the rotation of the support 112 is stopped, the expansion device releases the plate T, causing it to retract to its original state, restoring the spacing of the electronic components E to its original position.

[0157] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 101 is completed, the transfer robot 191 receives the mounting substrate BW from the plasma processing apparatus 101. The transfer robot 191 transfers the received mounting substrate BW to the mounting substrate cleaning apparatus 120. The mounting substrate cleaning apparatus 120 rotates the mounting substrate BW while supplying cleaning fluid L to the mounting substrate BW. This cleans the mounting substrate BW (mounting substrate cleaning step: step S104). After cleaning with cleaning fluid L, the substrate is dried by high-speed rotation to dissipate the cleaning fluid L. The mounting substrate cleaning step includes a state where it is performed simultaneously with the component supply body cleaning step. That is, the time for cleaning the component supply body TW overlaps with the time for cleaning the mounting substrate BW.

[0158] After the cleaning process of the component supply body TW is completed, the transfer robot 191 receives the component supply body TW from the supply body cleaning device 110 and passes it to the measuring device 140. The measuring device 140 aligns the component supply body TW (positioning process: step S105). After alignment, the transfer robot 191 receives the component supply body TW from the measuring device 140 and passes it to the adjustment processing device 130. The adjustment processing device 130 performs an adjustment process by irradiating the component supply body TW with UV light to reduce the adhesion of the sheet T (adjustment process: step S106). This positioning process and adjustment process overlap with the mounting substrate cleaning process.

[0159] After the cleaning process of the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning device 120 and passes it to the alignment device 150. The alignment device 150 aligns the mounting substrate BW (positioning process: step S107).

[0160] After the adjustment process is completed, the transfer robot 191 receives the part supply body TW from the adjustment processing device 130 and passes it to the supply body buffer device 160. After the mounting substrate BW is aligned, the transfer robot 191 receives the mounting substrate BW from the alignment device 150 and passes it to the mounting substrate buffer device 170.

[0161] Thus, the component supply body TW and the mounting substrate BW are stored in the component buffer 160 and the mounting substrate buffer 170 (storage process: step S108). After storing the component supply body TW and the mounting substrate BW, if the bonding device 180 is acceptable, the transfer robot 191 receives the component supply body TW and the mounting substrate BW and passes them to the bonding device 180. That is, based on the acceptable signal generated by the processing completion from the bonding device 180, the transfer robot 191 removes the component supply body TW and the mounting substrate BW from the component buffer 160 and the mounting substrate buffer 170. Then, the transfer robot 191 moves the component supply body TW and the mounting substrate BW into the bonding device 180. In the bonding device 180, the electronic component E is picked up from the component supply body TW and mounted on the mounting substrate BW (mounting process: step S109).

[0162] [Effect]

[0163] (1) Before mounting the electronic component E onto the mounting substrate BW, the plasma processing apparatus 101 of this embodiment performs surface treatment on the bonding surface between the electronic component E and the mounting substrate BW using plasma. The plasma processing apparatus 101 includes: a stage 20 for supporting the component supply body TW, in which a sheet T with an adhesive portion on its surface is supported by a ring R and the electronic component E is adhered to the sheet T; a chamber 10 on which the stage 20 is provided and which can depressurize the interior; an exhaust port 60 for exhausting the contents of the chamber 10; a gas inlet 30 for introducing the reaction gas into the depressurized chamber 10; a plasma generator 40 for plasmaizing the reaction gas; and a control device 200 for plasmaizing the reaction gas by the plasma generator 40, exposing the component supply body TW to the plasma, and after determining that the evaporation time for the volatile components to evaporate from the component supply body TW has been ensured, then performing surface treatment using plasma, and after determining that the surface treatment time for the electronic component E has been ensured, ending the surface treatment.

[0164] The pre-installation treatment apparatus 300 of this embodiment includes: a plasma treatment apparatus 101; a loading port 11c for loading / unloading a component supply TW and a mounting substrate BW; a supply cleaning apparatus 110 for cleaning the component supply TW; a mounting substrate cleaning apparatus 120 for cleaning the mounting substrate BW; and a conveying apparatus 190 for conveying the component supply TW.

[0165] The mounting system 100 of this embodiment includes: a pre-mounting processing device 300; and a bonding device 180, which causes the electronic component E processed by the pre-mounting processing device 300 to detach from the component supply body TW and be mounted on the mounting substrate BW.

[0166] The pre-installation treatment method of this embodiment performs pre-installation treatment on the mating surface between the electronic component E and the mounting substrate BW before installing the electronic component E on the mounting substrate BW. The pre-installation treatment method includes the following processes: a loading process in which a component supply body TW is loaded into a chamber 10, in which a sheet T with an adhesive portion on its surface is supported by a ring R and the electronic component E is adhered to the sheet T; a reaction gas introduction process in which a reaction gas is introduced into the chamber 10; a plasma heating process in which the introduced reaction gas is plasmaified and the component supply body TW is exposed to the plasma; a determination process in which the plasma heating process determines that the evaporation time for volatile components to evaporate from the component supply body TW has been ensured; and a termination process in which, after the determination process, a surface treatment is performed using plasma, and the plasma treatment is terminated after it is determined that the surface treatment time for the electronic component E has been ensured.

[0167] Therefore, volatile components can be removed from the component supply body TW before surface treatment using plasma. After heating using plasma heating treatment, especially after removing volatile components from the sheet T with adhesive portions, surface treatment can continue using plasma. Thus, the amount of volatile components volatilized from the component supply body TW during plasma surface treatment can be reduced. As a result, volatile components volatilized from the component supply body TW can be prevented from bonding to the surface of the electronic component E of the component supply body TW in the form of compounds or carbon-containing functional groups. That is, the activity and cleanliness of the surface of the electronic component E are not contaminated by volatile components volatilized from the sheet T or adhesive portions. Therefore, the reduction in bonding strength at the interface between the component supply body TW and the mounting substrate BW can be suppressed.

[0168] Furthermore, volatile components volatilized from the part supply TW can be removed in one chamber 10 of the plasma processing apparatus 101. This configuration allows for continued surface treatment using plasma after the removal of volatile components, thus shortening the processing time and preventing the need for large-scale apparatus. In particular, in this embodiment, heating in a depressurized environment under plasma heating processing pressure allows for more rapid volatilization of volatile components from the part supply TW. Therefore, pretreatment time can be shortened, enabling high-speed installation.

[0169] (2) The plasma processing apparatus 101 has a pressure detector 80 that detects the pressure inside the chamber 10. The control device 200 determines that the evaporation time can be ensured when the pressure change calculated based on the pressure detected by the pressure detector 80 is below a preset pressure change. In this case, the reduction in evaporation means that the volatile components are removed from the component supply TW. Therefore, the amount of evaporation of the volatile components evaporating from the component supply TW can be easily detected based on the pressure change to a level that does not cause adverse conditions during the pre-bonding treatment. That is, it can be determined whether the evaporation time for the volatile components can be ensured based on the pressure change. Therefore, the component supply TW can be set to a state in which the volatile components are removed at least to a degree that does not cause adverse conditions during the assembly process.

[0170] During plasma heating treatment under plasma heating pressure, the amplitude of the pressure changes due to the volatile components volatilized from the part feed body TW. However, if the volatile adhesive components volatilized from sheet T are removed to the extent that they do not cause adverse conditions during the pre-bonding treatment, a point in time (endpoint) with approximately a certain amount of pressure change will occur.

[0171] Therefore, plasma heating is performed under plasma heating treatment pressure, and the pressure change at the endpoint is used as the set pressure change, which is compared with the pressure change calculated based on the pressure inside chamber 10. This allows for the setting of the transition timing to surface treatment. If the removal of volatile components is insufficient, unwanted components will volatilize during plasma treatment, affecting the bonding strength. Excessive removal leads to reduced productivity. By properly controlling the endpoint of the removal process, necessary volatile components can be reliably removed, and productivity can be improved.

[0172] (3) The plasma processing apparatus 101 has a mask 50 disposed in the chamber 10 to expose the electronic component E and cover a portion of the ring R and the sheet T. The control device 200 moves the mask 50 away to the maximum extent before determining that the volatile component has been volatilized from the component supply TW, and moves the mask 50 away to the minimum extent when determining that the volatile component has been volatilized from the component supply TW.

[0173] Therefore, during the evaporation of volatile components, the mask 50 is maximally separated from the sheet T, thus not hindering the evaporation of volatile parts. Furthermore, when surface treatment is performed using plasma after the evaporation of volatile components is complete, the separation between the mask 50 and the sheet T is minimized, and a portion of the ring R and the sheet T is covered, thus suppressing the etching of exposed portions of the ring R and the sheet T. In the plasma processing apparatus 101, after removing a certain amount of volatile components from the component supply body TW, the surface of the electronic component E is activated and cleaned. This suppresses the reduction in bonding strength at the interface between the component supply body TW and the mounting substrate BW.

[0174] Furthermore, it is possible to achieve narrow connection terminal spacing that is impossible due to contact between bonding components containing solder, gold, copper, aluminum, etc. on the connection terminals, thus forming a high-density package.

[0175] [Variation Example]

[0176] The plasma processing apparatus 101, the pre-installation processing apparatus 300 (which is the pre-installation processing unit X), and the installation system 100 of this embodiment, as described above, can also be configured in the following variations.

[0177] (1) such as Figure 7 As shown, the plasma processing apparatus 101 of this embodiment may also be equipped with a luminescence intensity detector 90 for detecting the luminescence intensity of the plasma within the chamber 10. The control device 200 determines that the evaporation time can be ensured at the specified time point (end point) if the change in luminescence intensity detected by the luminescence intensity detector 90 is below a preset set amount. More specifically, a plasma luminescence monitor 91 is used, which detects the luminescence intensity of the plasma via a quartz window 92 embedded in a hole formed in the chamber 10.

[0178] For example, the luminescence intensity detector 90 can detect the amount of volatile components volatilized based on the luminescence intensity at the wavelength position of the spectral lines that are excited and emitted in the plasma. For example, it can monitor any of the wavelengths of light from CO2, CO, C, CH3, CH, C6H6, etc. Wavelengths that do not overlap with the emission from N2 and have high luminescence intensity are preferred for monitoring. Furthermore, a value larger than the set amount used to determine whether the volatilization of the volatile component has begun, i.e., the change in luminescence intensity at the start of volatilization, is stored in the control device 200. The change in luminescence intensity at the start of volatilization serves the same function as the change in pressure at the start of volatilization. The process after ensuring that the volatilization time can be guaranteed is omitted since it is the same as that of the plasma processing device 101 of the described form.

[0179] (2) For example Figure 8As shown, the plasma processing apparatus 101 of this embodiment may be equipped with a component detector 93 that detects the amount of a specific component in the gas within the detection chamber 10. In this case, the component detector 93 detects the amount of volatile component volatilized from the component supply TW as the amount of the specific component. The control device 200 determines that the volatilization time can be ensured at a time point (end point) when the amount of the specific component detected by the component detector 93 or the change in the amount of the specific component reaches or falls below a preset set amount. In this case, the control device 200 also moves the mask 50 away from the sheet T to the maximum extent before determining that the volatilization time of the volatile component from the component supply TW can be ensured, and moves the mask 50 away from the sheet T to the minimum extent when determining that the volatilization time of the volatile component from the component supply TW can be ensured.

[0180] More specifically, the component detector 93 uses a quadrupole mass spectrometer (Q-mass) that detects components via a detection port 11k formed in chamber 10. The component detector 93 ionizes the gas present in chamber 10, and separates and measures the generated ions according to their mass. That is, the component detector 93 analyzes the mass of ions generated from the gas present in chamber 11b and detects the amount present according to their mass.

[0181] At this time, a specific component, such as a component unique to the component supply body TW, can be selected. If a component from the sheet T or adhesive portion of the component supply body TW, which is different from the volatile components present in the chamber 10 (such as moisture adsorbed by the chamber wall), is selected, the volatilization of volatile components during surface treatment can be suppressed.

[0182] The components volatilized from the plasma processing device 101 appear as noise in the pressure change. In this embodiment, the amount of ions from the volatile components volatilized from the component supply TW is detected. Therefore, the amount of volatile components volatilized from the component supply TW can be measured more accurately.

[0183] Therefore, the mass of ions of the volatile component evaporating from the component supplier TW is calculated in advance, and the amount of ions with the same mass as the calculated mass is monitored as the evaporation amount of the volatile component from the component supplier TW. Thus, the amount of ions of the volatile component evaporating from the component supplier TW is detected. That is, the component amount is detected by monitoring ions with the same mass as the ions of the volatile component evaporating from the component supplier TW. If the detected amount of ions of the volatile component evaporating from the component supplier TW, or the change in the detected amount, reaches or falls below a set amount, the control device 200 determines that the evaporation time has been ensured.

[0184] Furthermore, the ions generated in the component detector 93 need to be protected from forces caused by collisions with other molecules during the period from ionization to detection. Therefore, in order to suppress collisions between the generated ions and other molecules, the component detector 93 is preferably installed at the detection port 11k of the chamber 10 via a differential exhaust system.

[0185] Additionally, a value larger than the set amount used to determine whether the volatilization of the adhesive component has begun, namely the change in volatilization start component, is stored in the control device 200. The change in volatilization start component plays the same role as the change in volatilization start pressure. The process after determining whether the volatilization time can be ensured is omitted since it is the same as that of the plasma processing device 101 of the described form.

[0186] (3) The control device 200 can also determine that the volatilization time can be ensured if a preset time has elapsed since the start of plasma treatment. More specifically, the time (volatilization time) from the start of plasma treatment to the endpoint when the pressure detected by the pressure detector 80, the plasma luminescence intensity detected by the luminescence intensity detector 90, or the amount of a specific component detected by the component detector 93 reaches the endpoint is determined in advance through experiments, etc. This time is set as the preset time in the control device 200, and if the preset time has elapsed since the start of heating using plasma treatment, the control device 200 determines that the volatilization time can be ensured. As a result, the determination process becomes simple, and the treatment time can be kept constant. Furthermore, the treatment after the determination that the volatilization time can be ensured is the same as that of the plasma treatment apparatus 101 of the above form, and therefore is omitted.

[0187] Furthermore, the set time is not limited to the stated time. For example, the control device 200 may add the input evaporation time and surface treatment time to calculate the total processing time and store it as the set time. Alternatively, the total processing time may be directly input into the control device 200 and stored by the control device 200 as the set time. That is, the control device 200 also includes a method to ensure that the evaporation time and surface treatment time are combined for determination.

[0188] (4) It may also include a temperature adjustment unit for adjusting the heating temperature of the part supply body TW. That is, the plasma processing apparatus 101 may also include a temperature adjustment unit for adjusting the heating temperature of the part supply body TW based on plasma heating processing. For example, it may also include a heating unit 70 for heating the part supply body TW. Figure 9As shown, the heating element 70 is disposed below the mounting surface on which the component supply body TW is placed. In this embodiment, the heating element 70 is built into the cavity 11b below the stage 20. When the component supply body TW is supported by the stage 20, the heating element 70 faces the side of the wafer T opposite to the side on which the wafer W is attached. The heating element 70 is, for example, a heater that generates heat by energizing.

[0189] The heating unit 70 is adjusted to match the heating performed using plasma heating treatment, so that the temperature of the sheet T is between 40°C and 200°C, preferably between 40°C and 80°C. The heating unit 70 is controlled by the control device 200, and heating is stopped after the volatilization time for the volatile components has elapsed after heating begins. This promotes the volatilization of volatile components and shortens the volatilization time.

[0190] Additionally, as a temperature adjustment unit, a cooling unit (not shown) may be provided similarly to the heating unit 70 to prevent overheating of the part supply body TW during plasma processing by cooling it. The cooling unit may, for example, be a flow path for circulating cooled liquid. In this case, while performing plasma heating processing, the cooling unit of the temperature adjustment unit is adjusted to make the temperature of the sheet T between 40°C and 200°C, preferably between 40°C and 80°C. Furthermore, as a temperature adjustment unit, both a heating unit and a cooling unit may be provided and adjusted to achieve the aforementioned temperature.

[0191] (5) In the described configuration, the mask 50 of the plasma processing apparatus 101 is a structure in which it is supported from below and raised and lowered, but it may also be a structure in which it is supported from above and raised and lowered. Alternatively, the plasma processing apparatus 101 may not have a mask 50.

[0192] (6) Alternatively, an irradiation device 72 for irradiating the component supply TW with UV light may be provided in the plasma processing apparatus 101, and the component supply TW may be irradiated with UV light during and / or after the volatile component removal process. Therefore, even if volatile components volatilized during the volatile component removal process re-adhere to the wafer W, the volatile components adhering to the surface of the wafer W can be decomposed and removed. Furthermore, when UV light irradiation is performed during the volatile component removal process, the volatilized volatile components can be easily decomposed and discharged, thereby suppressing re-adhesion to the wafer W.

[0193] For example, Figure 10 As shown, multiple irradiation devices 72 may also be provided above the chamber 10. In this case, the irradiation devices 72 may be provided near the side wall of the chamber 10 and positioned away from the plasma P. As shown, UV light can easily reach the sheet T from the gap of the rising mask.

[0194] (7) Alternatively, a heating lamp may be provided instead of the heating unit 70. For example, multiple heating lamps may be provided above the chamber 10, such as the irradiation device 72. Of course, both the heating unit 70 for heating the part supply body TW and the irradiation device 72 for irradiating the part supply body TW with UV light may be provided in the plasma processing apparatus 101, or both the heating unit 70 and the irradiation device 72 may be provided as the part being heated.

[0195] (8) The control device 200 can also determine whether the evaporation time has been ensured by setting a preset pressure value instead of the pressure change. In this case, instead of the preset pressure change or the evaporation start pressure change, a threshold value corresponding to the pressure value relative to the plasma heating treatment pressure is used as the preset pressure value. The threshold value is determined in advance through experiments, etc. This configuration is suitable for situations where, for example, there are many volatile components from the component supply TW, and it is clear whether the pressure value is below the preset pressure value.

[0196] (9) In the described embodiment, the mounting system 100 consists of one connecting device 180, but is not limited thereto. For example... Figure 11 As shown, the mounting section Y can also be a mounting system 100 with multiple joining devices 180. The number of joining devices 180 in the mounting section Y can be determined by the cycle time, which is determined by the size of the part supply body TW, the mounting base plate BW, and the required processing time. By increasing the number of devices, efficiency can be improved.

[0197] Thus, when multiple coupling devices 180 are installed in the mounting section Y, such as Figure 11 As shown, a base 11m can be provided in the mounting section Y, and multiple engaging devices 180 can be arranged to connect with the periphery of the base 11m. Figure 11 Two joining devices 180 are shown, but the number of joining devices 180 connected is not limited; it can be one or more. Additionally, a conveying device 190α, different from the conveying device 190, can be installed inside the base 11m for distributing, supplying, and retrieving part supply bodies TW and mounting substrates BW to each joining device 180. Multiple conveying devices 190α can also be installed as needed.

[0198] Alternatively, a buffer device 11n that can accommodate the component supply body TW and the mounting substrate BW can be provided inside the substrate 11m.

[0199] Alternatively, the pre-processed component supply TW and mounting substrate BW can be stored in the buffer device 11n instead of in the component buffer device 160 and mounting substrate buffer device 170 of the pre-mounting processing unit X. Furthermore, the mounting-processed component supply TW and mounting substrate BW can also be stored in the buffer device 11n.

[0200] In addition, such as Figure 11 As shown, a dedicated conveying device 190β can also be provided at the loading port 11c. Alternatively, a supply body buffer device 160 and a mounting substrate buffer device 170 can be provided on the loading port 11c side of the base 11a, housing the part supply body TW and mounting substrate BW conveyed by the conveying device 190β in the supply body buffer device 160 and mounting substrate buffer device 170. The part supply body TW and mounting substrate BW housed in the supply body buffer device 160 and mounting substrate buffer device 170 can be conveyed by the conveying device 190 to each chamber 11b.

[0201] The buffer device 11n can also be a storage container capable of holding multiple component suppliers TW and mounting substrates BW. The storage container can be stacked at intervals and hold the component suppliers TW and mounting substrates BW.

[0202] The buffer device 11n can hold the pre-processed part supply body TW and the mounting substrate BW for subsequent installation, or it can hold the part supply body TW and the mounting substrate BW after the installation process is completed.

[0203] Alternatively, multiple buffer devices 11n can be provided within the base 11m.

[0204] Furthermore, the buffer device 11n can also be configured as a stage capable of holding only one component supply TW or mounting substrate BW. In this case, the component supply TW or mounting substrate BW to be mounted is housed in the supply buffer device 160 or mounting substrate buffer device 170 as described in the embodiment. Alternatively, the buffer device 11n can also be configured as a storage container capable of holding multiple component supply TWs or mounting substrates BW. In this case, similar to the supply buffer device 160 or mounting substrate buffer device 170, the component supply TWs or mounting substrates BW can be stacked and housed.

[0205] Alternatively, a single conveying device 190 can distribute the part supply body TW and the mounting base plate BW to each of the multiple joining devices 180. In this case, it is sufficient to install the conveying device 190 inside the base into which the base 11a and the base 11m are joined.

[0206] (10) As described above, the base 11m is provided in the mounting section Y, and the mounting section Y and the pre-installation treatment section X can also be separate components. That is, the mounting system 100 can be configured to independently construct the mounting section Y and the pre-installation treatment section X. The pre-installation treatment section X can be configured to include the plasma processing device 101. In this case, the control device 200 can control both the pre-installation treatment section X and the mounting section Y, which are separately provided therewith, or separate control devices can be provided for each.

[0207] In the various variations described above, it is also possible to achieve narrow connection terminal spacing that is impossible to achieve due to contact between mounting components containing solder, gold, copper, aluminum, etc. on the connection terminals, thereby forming a high-density package.

[0208] [Other Implementation Methods]

[0209] The embodiments and variations of the present invention have been described above. However, these embodiments and variations are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other ways, and various omissions, substitutions, changes, and combinations can be made without departing from the spirit of the invention. These embodiments and variations are included in the scope or spirit of the invention and are included in the invention as described in the claims.

[0210] Explanation of icon numbers

[0211] 11a, 11m: Matrix

[0212] 11b: Chamber

[0213] 11c: Loading port

[0214] 11d: Window component

[0215] 11e: Hole

[0216] 11f: Stop

[0217] 11j, 11k: Detection port

[0218] 11n: Buffer device

[0219] 10: Chamber

[0220] 20: Platform

[0221] 21: Drive Unit

[0222] 21a, 21b: Rods

[0223] 21c: Drive mechanism

[0224] 30: Gas inlet

[0225] 31: Supply device

[0226] 31a: Piping

[0227] 40: Plasma generator

[0228] 41: Antenna

[0229] 42: Power supply

[0230] 43: Matching Box

[0231] 50: Mask

[0232] 50a: Support shaft

[0233] 51: Drive Unit

[0234] 51a: Rod

[0235] 51b: Drive mechanism

[0236] 60: Exhaust port

[0237] 61: Pressure reducing device

[0238] 61a: Piping

[0239] 70: Heating section

[0240] 72: Irradiation device

[0241] 74: Temperature detector

[0242] 80: Pressure detector

[0243] 90: Luminous intensity detector

[0244] 91: Plasma Emission Monitor

[0245] 92: Window

[0246] 93: Composition Detector

[0247] 100: Install the system

[0248] 101: Plasma Processing Unit

[0249] 110: Supply body cleaning device

[0250] 111: Cleaning Room

[0251] 111a: Opening

[0252] 111b: Door blocking

[0253] 112: Support section

[0254] 113: Rotating mechanism

[0255] 114: Cup

[0256] 115: Supply Department

[0257] 115a: Nozzle

[0258] 115b: Moving mechanism

[0259] 120: Install substrate cleaning equipment

[0260] 130: Adjust the processing device

[0261] 131: Irradiation device

[0262] 140: Measurement device

[0263] 150: Alignment device

[0264] 160: Supply buffer device

[0265] 161: Storage

[0266] 170: Install substrate buffer device

[0267] 171: Storage

[0268] 180: Engaging device

[0269] 190, 190α, 190β: conveying device

[0270] 191: Transport Robot

[0271] 191a: Robotic Arm

[0272] 192: Mobile mechanism

[0273] 200: Control device

[0274] 300: Pre-treatment device installation

[0275] TW: Parts Supply Unit

[0276] BW: Mounting substrate

[0277] X: Pre-installation processing unit

[0278] Y: Installation Department

Claims

1. A plasma processing apparatus, wherein, before mounting electronic components onto a mounting substrate, a surface treatment is performed on the mating surface between the electronic components and the mounting substrate using plasma, the plasma processing apparatus being characterized by having: A stage supports a component supply body in which a sheet with an adhesive portion on its surface is supported by a ring and the electronic component is adhered to the sheet. The chamber is equipped with the aforementioned stage and is capable of decompression of the interior. An exhaust port is used to vent air from the chamber. A gas inlet is used to introduce the reactant gas into the depressurized chamber; A plasma generator that plasmaizes the reactive gases; as well as The control device plasmaizes the reactive gas via the plasma generator, exposes the component supply to the plasma, and after determining that sufficient evaporation time has been ensured for the volatile components to evaporate from the component supply, performs surface treatment using the plasma. After determining that sufficient surface treatment time has been ensured for the electronic component, the surface treatment ends.

2. The plasma processing apparatus according to claim 1, characterized in that... It has a pressure detector for detecting the pressure inside the chamber. If the pressure value detected by the pressure detector or the pressure change calculated based on the pressure value is below a preset pressure value or a preset pressure change, the control device determines that the evaporation time can be ensured.

3. The plasma processing apparatus according to claim 1, characterized in that... It has a luminescence intensity detector for detecting the plasma luminescence intensity within the chamber. If the luminous intensity detected by the luminous intensity detector or the change in luminous intensity is below a preset value, the control device determines that the evaporation time can be ensured.

4. The plasma processing apparatus according to claim 1, characterized in that... A component detector has a component detector that can detect the amount of a specific component in the gas within the chamber. If the amount of a specific component detected by the component detector or the change in the amount of a specific component is at or below a preset value, the control device determines that the evaporation time can be ensured.

5. The plasma processing apparatus according to claim 1, characterized in that, The control device adjusts the amount of reactant gas introduced from the gas inlet when it determines that the evaporation time has been ensured.

6. The plasma processing apparatus according to claim 1, characterized in that... It has a temperature adjustment unit that adjusts the temperature of the part supply body.

7. The plasma processing apparatus according to claim 1, characterized in that, With a mask, The mask is disposed within the cavity, exposing the electronic components and covering a portion of the ring and the sheet. Before determining that the volatile component has completely evaporated from the part supply, the control device moves the mask away from the sheet to the maximum extent, and when determining that the volatile component has completely evaporated from the part supply, moves the mask away from the sheet to the minimum extent.

8. A pre-treatment device for installation, characterized in that... have: The plasma processing apparatus as described in any one of claims 1 to 7; Loading port for loading / unloading the parts supply body and the mounting base plate; A supply body cleaning device is used to clean the part supply body. The mounting substrate cleaning device is used to clean the mounting substrate. as well as A conveying device for conveying the parts supply body.

9. An installation system, characterized in that... have: The pre-installation treatment apparatus as described in claim 8; as well as A bonding device that detaches the electronic component, after being processed by the pre-mounting processing device, from the component supply body and mounts it onto the mounting substrate.

10. A pre-installation treatment method, wherein before mounting electronic components onto a mounting substrate, pre-installation treatment is performed on the mating surfaces of the electronic components and the mounting substrate, the pre-installation treatment method being characterized by performing the following treatment: The component supply body is moved into the chamber during the loading process. In the component supply body, a sheet with an adhesive portion on its surface is supported by a ring and the electronic component is adhered to the sheet. The reactive gas is introduced into the chamber. Plasma heating treatment plasmaizes the introduced reactive gas, exposing the part supply body to the plasma; In the plasma heating process, a determination is made to ensure that the evaporation time for the volatile components to evaporate from the component supply is sufficient; and The process ends after the determination process, and surface treatment is performed using plasma. After determining that the surface treatment time for the electronic component has been ensured, the surface treatment ends.

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