Semiconductor device

Abstract

The semiconductor device (A1) of the present application includes a first semiconductor element (9A), a second semiconductor element (9B), a first conduction member (1), a second conduction member (2), a third conduction member (3), a fourth conduction member (4), and a sealing resin (8). The first semiconductor element (9A) has a first electrode (91), a second electrode (92), and a third electrode (93). The second semiconductor element (9B) has a fourth electrode (94), a fifth electrode (95), and a sixth electrode (96). The third terminal (31) is in conduction with the first electrode (91) and the fourth electrode (94). The fourth terminal (41) is in conduction with the second electrode (92) and the fifth electrode (95). The first terminal (11) is in conduction with the third electrode (93) and is insulated from the sixth electrode (96). The second terminal (21) is in conduction with the sixth electrode (96) and is insulated from the third electrode (93). With such a configuration, the first semiconductor element (9A) and the second semiconductor element (9B) can more appropriately function.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device. Background Technology

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, a first lead, a second lead, a third lead, and a sealing resin. The first lead is connected to the drain electrode of the semiconductor element. The second lead is connected to the gate electrode of the semiconductor element. The third lead is connected to the source electrode of the semiconductor element. The first, second, and third leads protrude from the sealing resin.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-174951 Summary of the Invention

[0006] As a semiconductor device, it is sometimes desirable to have multiple semiconductor elements.

[0007] This disclosure is made based on the above circumstances, and its objective is to provide a semiconductor device that enables multiple semiconductor elements to function more appropriately.

[0008] The semiconductor device provided by this disclosure includes: a first semiconductor element; a second semiconductor element; a first conducting member having a first terminal; a second conducting member having a second terminal; a third conducting member having a third terminal; a fourth conducting member having a fourth terminal; and a sealing resin covering the first semiconductor element and the second semiconductor element. The first semiconductor element has a first electrode and a second electrode and a third electrode for controlling the conduction and insulation of the first electrode and the second electrode. The second semiconductor element has a fourth electrode and a fifth electrode and a sixth electrode for controlling the conduction and insulation of the fourth electrode and the fifth electrode. The third terminal is connected to the first electrode and the fourth electrode, the fourth terminal is connected to the second electrode and the fifth electrode, the first terminal is connected to the third electrode and is insulated from the sixth electrode, and the second terminal is connected to the sixth electrode and is insulated from the third electrode.

[0009] Other features and advantages of this disclosure will become more apparent from the following detailed description with reference to the accompanying drawings. Attached Figure Description

[0010] Figure 1 This is a perspective view showing the semiconductor device according to the first embodiment of this disclosure.

[0011] Figure 2 This is a partial perspective view of a semiconductor device according to the first embodiment of this disclosure.

[0012] Figure 3 This is a top view showing the semiconductor device according to the first embodiment of this disclosure.

[0013] Figure 4 This is a partial top view of the semiconductor device according to the first embodiment of this disclosure.

[0014] Figure 5 This is a bottom view showing the semiconductor device according to the first embodiment of this disclosure.

[0015] Figure 6 It is along Figure 4 A sectional view along line VI-VI.

[0016] Figure 7 It is along Figure 4 A sectional view along line VII-VII.

[0017] Figure 8 It is along Figure 4 A cross-sectional view of line VIII-VIII.

[0018] Figure 9 This is a circuit diagram illustrating a semiconductor device according to the first embodiment of this disclosure.

[0019] Figure 10 This is a partial top view showing a first modified example of a semiconductor device according to the first embodiment of the present disclosure.

[0020] Figure 11 This is a circuit diagram illustrating a semiconductor device according to the second embodiment of this disclosure.

[0021] Figure 12 This is a circuit diagram illustrating the semiconductor device according to the third embodiment of this disclosure.

[0022] Figure 13 This is a partial perspective view showing the semiconductor device according to the fourth embodiment of this disclosure.

[0023] Figure 14 This is a partial top view of the semiconductor device according to the fourth embodiment of this disclosure.

[0024] Figure 15 This is a circuit diagram illustrating the semiconductor device according to the fourth embodiment of this disclosure.

[0025] Figure 16This is a partial top view showing a first modified example of the semiconductor device according to the fourth embodiment of this disclosure.

[0026] Figure 17 This is a perspective view showing the semiconductor device according to the fifth embodiment of this disclosure.

[0027] Figure 18 This is a partial perspective view of the semiconductor device according to the fifth embodiment of this disclosure.

[0028] Figure 19 This is a partial top view of the semiconductor device according to the fifth embodiment of this disclosure.

[0029] Figure 20 This is a bottom view showing the semiconductor device according to the fifth embodiment of this disclosure.

[0030] Figure 21 It is along Figure 19 A cross-sectional view of the XXI-XXI line.

[0031] Figure 22 This is a partial top view of the semiconductor device according to the sixth embodiment of this disclosure.

[0032] Figure 23 This is a partial top view showing a first modified example of the semiconductor device according to the sixth embodiment of this disclosure.

[0033] Figure 24 This is a partial top view showing a second variation of the semiconductor device according to the sixth embodiment of this disclosure.

[0034] Figure 25 This is a perspective view showing the semiconductor device according to the seventh embodiment of this disclosure.

[0035] Figure 26 This is a partial perspective view of the semiconductor device according to the seventh embodiment of this disclosure.

[0036] Figure 27 This is a partial perspective view of the semiconductor device according to the seventh embodiment of this disclosure.

[0037] Figure 28 This is a partial top view showing the semiconductor device according to the seventh embodiment of this disclosure.

[0038] Figure 29 This is a partial top view showing the semiconductor device according to the seventh embodiment of this disclosure.

[0039] Figure 30 This is a bottom view showing the semiconductor device according to the seventh embodiment of this disclosure.

[0040] Figure 31 It is along Figure 28 A sectional view of the XXXI-XXXI line.

[0041] Figure 32 It is along Figure 28 A sectional view of the XXXII-XXXII line. Detailed Implementation

[0042] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0043] The terms “first,” “second,” “third,” etc., used in this disclosure are for identification purposes only and are not intended to assign any order to these objects.

[0044] In this disclosure, unless otherwise specified, "object A is formed on object B" and "object A is formed on object B" include "object A is directly formed on object B" and "object A is formed on object B while other objects exist between object A and object B." Similarly, unless otherwise specified, "object A is disposed on object B" and "object A is disposed on object B" include "object A is directly disposed on object B" and "object A is disposed on object B while other objects exist between object A and object B." Likewise, unless otherwise specified, "object A is located on object B" includes "object A is in contact with object B, and object A is located on object B" and "object A is located on object B while other objects exist between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed from a certain direction" includes both "the complete overlap of object A and object B" and "the partial overlap of object A and object B". Additionally, in this disclosure, "a surface A facing direction B (either side or side)" is not limited to the case where the angle between surface A and direction B is 90°, but also includes the case where surface A is tilted relative to direction B.

[0045] Figures 1-9 This refers to the semiconductor device according to the first embodiment of this disclosure. The semiconductor device A1 of this embodiment includes a first semiconductor element 9A, a second semiconductor element 9B, a first conductive member 1, a second conductive member 2, a third conductive member 3, a fourth conductive member 4, and a sealing resin 8.

[0046] In these diagrams, one side of the first direction x is defined as the first side x1, and the other side is defined as the second side x2. Similarly, one side of the second direction y, which is orthogonal to the first direction x, is defined as the first side y1, and the other side as the second side y2. Finally, one side of the third direction z, which is orthogonal to both the first and second directions y, is defined as the first side z1, and the other side as the second side z2.

[0047] The first semiconductor element 9A can be, for example, a bipolar transistor. The first semiconductor element 9A can be an IGBT (Insulated Gate Bipolar Transistor) or a Si-IGBT. Alternatively, the first semiconductor element 9A can be a bipolar junction transistor (BJT). In the following description, unless otherwise specified, the case where the first semiconductor element 9A is a Si-IGBT will be used as an example. A Si-IGBT has a semiconductor layer containing Si as a constituent element. The first semiconductor element 9A can have a first electrode 91, a second electrode 92, and a third electrode 93.

[0048] The first electrode 91 can be a collector electrode. The first electrode 91 can be located on the second side z2 of the third direction z of the first semiconductor element 9A. The second electrode 92 can be an emitter electrode. The second electrode 92 can be located on the first side z1 of the third direction z of the first semiconductor element 9A. The third electrode 93 can be a gate electrode. The third electrode 93 can be located on the first side z1 of the third direction z of the first semiconductor element 9A. The third electrode 93 can be smaller than the second electrode 92 when viewed in the third direction z. The third electrode 93 can be located on the first side x1 of the first direction x relative to the second electrode 92.

[0049] The second semiconductor element 9B can be, for example, a unipolar n-type transistor. The second semiconductor element 9B can be a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or a SiC-MOSFET. In the following description, unless otherwise specified, the case where the second semiconductor element 9B is a SiC-MOSFET will be used as an example. A SiC-MOSFET has a semiconductor layer containing SiC as a constituent element. The second semiconductor element 9B can have a fourth electrode 94, a fifth electrode 95, and a sixth electrode 96.

[0050] The fourth electrode 94 can be a drain electrode. The fourth electrode 94 can be located on the second side z2 of the third direction z of the second semiconductor element 9B. The fifth electrode 95 can be a source electrode. The fifth electrode 95 can be located on the first side z1 of the third direction z of the second semiconductor element 9B. The sixth electrode 96 can be a gate electrode. The sixth electrode 96 can be located on the first side z1 of the third direction z of the second semiconductor element 9B. The sixth electrode 96 can be smaller than the fifth electrode 95 when viewed in the third direction z. The sixth electrode 96 can be located on the first side x1 of the first direction x relative to the fifth electrode 95. The second semiconductor element 9B can be located on the first side x1 of the first direction x relative to the first semiconductor element 9A.

[0051] When the first semiconductor element 9A is a Si-IGBT and the second semiconductor element 9B is a SiC-MOSFET, the second semiconductor element 9B may tend to have a faster switching speed than the first semiconductor element 9A. The first semiconductor element 9A may tend to have lower conduction losses than the second semiconductor element 9B when carrying large currents. In the illustrated example, the second semiconductor element 9B can be observed to have lower losses than the first semiconductor element 9A in the third direction z.

[0052] The sealing resin 8 covers the first semiconductor element 9A and the second semiconductor element 9B. The sealing resin 8 may contain insulating materials such as epoxy resin. The specific structure of the sealing resin 8 is not limited, and it may have a first resin surface 81, a second resin surface 82, a third resin surface 83, a fourth resin surface 84, a fifth resin surface 85, and a sixth resin surface 86.

[0053] The first resin surface 81 is the surface facing the first side z1 in the third direction z. The second resin surface 82 is the surface facing the second side z2 in the third direction z. The third resin surface 83 is the surface facing the first side x1 in the first direction x. The fourth resin surface 84 is the surface facing the second side x2 in the first direction x. The fifth resin surface 85 is the surface facing the first side y1 in the second direction y. The sixth resin surface 86 is the surface facing the second side y2 in the second direction y. The first resin surface 81, the second resin surface 82, the third resin surface 83, the fourth resin surface 84, the fifth resin surface 85, and the sixth resin surface 86 can be surfaces of various shapes, such as planes, curved surfaces, and bent surfaces.

[0054] In the illustrated example, the sealing resin 8 may have a through hole 801, two recesses 802, and a recess 803. The through hole 801 penetrates the sealing resin 8 in a third direction z, opening at a first resin surface 81 and a second resin surface 82. The two recesses are located separately on opposite sides of a first direction x. The recess 802 is recessed from the first resin surface 81 toward a second side z2 in the third direction z. The recess 802 located on the first side x1 in the first direction x is recessed from the third resin surface 83 toward the second side x2 in the first direction x. The recess 802 located on the second side x2 in the first direction x is recessed from the fourth resin surface 84 toward the first side x1 in the first direction x. The recess 803 is recessed from the sixth resin surface 86 toward the first side y1 in the second direction y. The recess 803 opens at both the first resin surface 81 and the second resin surface 82.

[0055] The first conductive component 1 comprises a conductive material. The conductive material may include, for example, metals such as Cu (copper), Ni (nickel), and Fe (iron), or alloys thereof. At appropriate locations on the surface of the first conductive component 1, a surface layer containing a metal such as Ag (silver) may be provided (illustration omitted).

[0056] The first conductive component 1 may have a first terminal 11 and a first pad 12. The first terminal 11 is exposed to the outside of the sealing resin 8 and can protrude from the sixth surface 86 of the resin towards the second side y2 in the second direction y. The first terminal 11 may extend along the second direction y. The first pad 12 is covered by the sealing resin 8.

[0057] The first pad 12 is connected to the third electrode 93 via a wire 71. Thus, the first terminal 11 can function as the gate terminal of the first semiconductor element 9A.

[0058] The second conductive component 2 comprises a conductive material. The conductive material may include, for example, metals such as Cu (copper), Ni (nickel), and Fe (iron), or alloys thereof. A surface layer containing a metal such as Ag (silver) may be provided at a suitable location on the surface of the second conductive component 2 (illustration omitted). In the illustrated example, the second conductive component 2 is positioned on a first side x1 relative to the first conductive component 1 in the first direction x.

[0059] The second conductive component 2 may have a second terminal 21 and a second pad 22. The second terminal 21 is exposed to the outside of the sealing resin 8 and can protrude from the sixth surface 86 of the resin towards the second side y2 in the second direction y. The second terminal 21 may extend along the second direction y. The second pad 22 is covered by the sealing resin 8.

[0060] The second pad 22 is connected to the sixth electrode 96 via a wire 72. Thus, the second terminal 21 can function as the gate terminal of the second semiconductor element 9B.

[0061] The third conductive component 3 comprises a conductive material. The conductive material may include, for example, metals such as Cu (copper), Ni (nickel), and Fe (iron), or alloys thereof. At appropriate locations on the surface of the third conductive component 3, a surface layer containing a metal such as Ag (silver) may be provided (illustration omitted).

[0062] The third conductive member 3 may have a third terminal 31 and an island portion 30. The third terminal 31 is exposed to the outside of the sealing resin 8 and can protrude from the sixth surface 86 of the resin toward a second side y2 in the second direction y. The third terminal 31 may extend along the second direction y. In the illustrated example, the third terminal 31 may be located on the second side x2 in the first direction x relative to the first terminal 11.

[0063] The island portion 30 is covered by sealing resin 8. When viewed in the third direction z, the island portion 30 may be larger than the first terminal 11 and the first pad 12. The island portion 30 may be exposed from the second surface 82 of the resin to the second side z2 in the third direction z. The island portion 30 may be located on the first side y1 in the second direction y relative to the first pad 12 and the second pad 22.

[0064] The specific structure of the island portion 30 is not limited, and it may have a through hole 301. The through hole 301 can penetrate the island portion 30 in the third direction z. When viewed in the third direction z, the through hole 301 can be located inside the through hole 301. The island portion 30 can be exposed from the recess 802.

[0065] A first semiconductor element 9A and a second semiconductor element 9B may be mounted on the island portion 30. A first electrode 91 may be electrically bonded to the island portion 30 via a conductive bonding material 99. The conductive bonding material 99 may be, for example, solder, silver paste, etc. A fourth electrode 94 may be electrically bonded to the island portion 30 via the conductive bonding material 99. In the illustrated example, the first semiconductor element 9A and the second semiconductor element 9B may be arranged on the island portion 30 along a first direction x. The first semiconductor element 9A may be located on a second side x2 relative to the second semiconductor element 9B in the first direction x.

[0066] The fourth conductive component 4 comprises a conductive material. The conductive material may include, for example, metals such as Cu (copper), Ni (nickel), and Fe (iron), or alloys thereof. A surface layer containing a metal such as Ag (silver) may be provided at appropriate locations on the surface of the fourth conductive component 4 (illustration omitted). In the illustrated example, the fourth conductive component 4 may be located between the first conductive component 1 and the third terminal 31 in the first direction x.

[0067] The fourth conductive component 4 may have a fourth terminal 41 and a fourth pad portion 42. The fourth terminal 41 is exposed to the outside of the sealing resin 8 and can protrude from the sixth surface 86 of the resin towards the second side y2 in the second direction y. The fourth terminal 41 may extend along the second direction y. The fourth pad portion 42 is covered by the sealing resin 8. In the illustrated example, the fourth pad portion 42 may be larger than the first pad 12 and the second pad 22.

[0068] The fourth pad portion 42 is connected to the second electrode 92 via wire 73. Additionally, the fourth pad portion 42 is connected to the fifth electrode 95 via wire 74. Thus, the second terminal 21 can function as the emitter electrode of the first semiconductor element 9A and the source electrode of the second semiconductor element 9B. In the illustrated example, when viewed in the third direction z, wire 74 can intersect with wire 71.

[0069] like Figure 9 As shown, the first semiconductor element 9A and the second semiconductor element 9B are connected in parallel. The third terminal 31 is conductive to the first electrode 91 and the fourth electrode 94. The fourth terminal 41 is conductive to the second electrode 92 and the fifth electrode 95. The first terminal 11 is conductive to the third electrode 93 and is insulated from the sixth electrode 96. The second terminal 21 is conductive to the sixth electrode 96 and is insulated from the third electrode 93. In the illustrated example, the second semiconductor element 9B may include a body diode 902. The body diode 902 is positively oriented from the fourth terminal 41 toward the third terminal 31.

[0070] Next, the function of semiconductor device A1 will be explained.

[0071] The first terminal 11 is connected to the third electrode 93 and insulated from the sixth electrode 96, while the second terminal 21 is connected to the sixth electrode 96 and insulated from the third electrode 93. Therefore, the switching operations of the first semiconductor element 9A and the second semiconductor element 9B can be controlled using the third electrode 93 and the sixth electrode 96, respectively. Thus, multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately.

[0072] When the first semiconductor element 9A is a Si-IGBT and the second semiconductor element 9B is a SiC-MOSFET, the first semiconductor element 9A has the advantage of lower conduction loss when carrying high current than the second semiconductor element 9B, and the second semiconductor element 9B has the advantage of faster switching operation than the first semiconductor element 9A. For example, drive control can be performed such that when the switch is turned on, the second semiconductor element 9B is switched on earlier than the first semiconductor element 9A, and when the switch is turned off, the first semiconductor element 9A is switched off earlier than the second semiconductor element 9B. This speeds up the switching operation when the semiconductor device A1 is turned on and reduces conduction loss at high current.

[0073] Figures 10-32 The figures illustrate variations and other embodiments of this disclosure. It should be noted that in these figures, elements that are the same as or similar to those in the above embodiments are labeled with the same reference numerals as those in the above embodiments. Furthermore, the structures of the various variations and components in each embodiment can be appropriately combined with each other without creating technical inconsistencies.

[0074] Figure 10 This represents a first modification of the semiconductor device A1. In this modification of the semiconductor device A11, the third electrode 93 may be located on the second side x2 of the first direction x relative to the second electrode 92.

[0075] The second terminal 21 may be located on a first side x1 relative to the first terminal 11 in the first direction x. The third terminal 31 may be located between the first terminal 11 and the second terminal 21 in the first direction x. The fourth terminal 41 may be located between the first terminal 11 and the third terminal 31 in the first direction x. In this modified example, when viewed in the third direction z, the wires 71 and 74 may not cross.

[0076] According to this modification, the multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, when viewed in the third direction z, the conductors 71 and 74 do not cross, making the manufacture of the semiconductor device A11 easier, and enabling more reliable insulation of the conductors 71 and 74.

[0077] Figure 11 This refers to the semiconductor device according to the second embodiment of this disclosure. The structure of the first semiconductor element 9A of the semiconductor device A2 in this embodiment differs from that in the above-described embodiment.

[0078] The first semiconductor element 9A in this embodiment includes a diode 901. The diode 901 is positive in the direction from the fourth terminal 41 toward the third terminal 31. The first semiconductor element 9A in this embodiment may be an RC-IGBT (reverse-conduction insulated gate bipolar transistor). For example, the first semiconductor element 9A may be a structure in which the functional part of an IGBT and the diode 901 are integrated in a first body portion 90A containing Si.

[0079] According to this embodiment, the multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, by including a diode 901 in the first semiconductor element 9A, the first semiconductor element 9A can be protected from large reverse currents. Additionally, compared to using separate diodes, space saving is achieved.

[0080] Figure 12 This refers to the semiconductor device according to the third embodiment of this disclosure. The structure of the second semiconductor element 9B in the semiconductor device A3 of this embodiment differs from that of the embodiments described above.

[0081] The second semiconductor element 9B in this embodiment also includes a Schottky barrier diode 903. The Schottky barrier diode 903 is positive in the direction from the fourth terminal 41 toward the third terminal 31. The second semiconductor element 9B may, for example, be a structure in which a MOSFET functional portion and a Schottky barrier diode 903 are integrated in a second body portion 90B containing SiC.

[0082] According to this embodiment, the multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, by including a Schottky barrier diode 903 in the second semiconductor element 9B, the second semiconductor element 9B can be more reliably protected from large reverse currents. Additionally, compared to the case of separate diodes, space saving is achieved.

[0083] Figures 13-15 This indicates a semiconductor device according to a fourth embodiment of the present invention. The semiconductor device A4 of this embodiment further includes a diode element 9C.

[0084] Diode element 9C is a diode that is forward-biased from the fourth terminal 41 toward the third terminal 31, and is a separate electronic component consisting of the first semiconductor element 9A and the second semiconductor element 9B. Diode element 9C can be, for example, a Si-FRD (Fast Recovery Diode) or a SiC-SBD (Schottky Barrier Diode).

[0085] Diode element 9C may be mounted on island portion 30, for example. Diode element 9C may be located between first semiconductor element 9A and second semiconductor element 9B in the first direction x. The cathode electrode of diode element 9C may be conductively connected to island portion 30. The anode electrode of diode element 9C may be connected to fourth pad portion 42 via wire 75.

[0086] The second terminal 21 can be located on a first side x1 relative to the first terminal 11 in the first direction x. The third terminal 31 can be located on a second side x2 relative to the first terminal 11 in the first direction x. The fourth terminal 41 can be located between the first terminal 11 and the third terminal 31 in the first direction x. When viewed in the third direction z, the wires 71, 73, and 75 can cross each other.

[0087] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. By including the diode element 9C, a diode element 9C of a specification suitable for providing electrical protection to the first semiconductor elements 9A and second semiconductor elements 9B can be appropriately selected.

[0088] Figure 16 This represents a first modification of the semiconductor device A4. In this modification of the semiconductor device A41, the third electrode 93 may be located on the second side x2 of the first direction x relative to the second electrode 92.

[0089] The second terminal 21 may be located on a first side x1 relative to the first terminal 11 in the first direction x. The third terminal 31 may be located between the first terminal 11 and the second terminal 21 in the first direction x. The fourth terminal 41 may be located between the first terminal 11 and the third terminal 31 in the first direction x. In this modified example, when viewed in the third direction z, the wire 71 may not cross the wires 73 and 75.

[0090] According to this modification, the multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, when viewed in the third direction z, the conductor 71 does not cross the conductors 73 and 75, making the manufacture of the semiconductor device A41 easier and enabling more reliable insulation of the conductors 71 from the conductors 73 and 75.

[0091] Figures 17-21 This refers to the semiconductor device according to the fifth embodiment of the present invention.

[0092] The third conductive component 3 may have an island portion 30, a third terminal 31, and a connecting portion 32. The connecting portion 32 is connected to the island portion 30 and may extend relative to the island portion 30 toward a first side y1 in the second direction y. The connecting portion 32 may protrude from the resin fifth surface 85 of the sealing resin 8 toward the first side y1 in the second direction y.

[0093] The third terminal 31 can be formed by the second side z2 of the island portion 30 and the connecting portion 32 facing the third direction z.

[0094] The fourth conductive component 4 may include a plurality of fourth terminals 41. The plurality of fourth terminals 41 are arranged in the first direction x. The first terminal 11, the first pad 12, and the plurality of fourth terminals 41 may be in a curved shape when viewed in the first direction x.

[0095] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. When mounting the semiconductor device A5 onto a circuit board (not shown), the circuit board is positioned on a second side z2 relative to the semiconductor device A5 in the third direction z. So-called surface mounting of the semiconductor device A5 can be achieved using the portions of the first terminal 11, the second terminal 21, and the plurality of fourth terminals 41 facing the second side z2 in the third direction z, and the third terminal 31.

[0096] Figure 22 This refers to the semiconductor device according to the sixth embodiment of this disclosure. The semiconductor device A6 of this embodiment differs from semiconductor device A5 in that it also includes a diode element 9C. The diode element 9C may have the same structure as the diode element 9C in the semiconductor device A4 described above.

[0097] Semiconductor device A6 may further include a fifth conductive component 5. The fifth conductive component 5 comprises a conductive material. The conductive material may include, for example, metals such as Cu (copper), Ni (nickel), and Fe (iron), or alloys thereof. At appropriate locations on the surface of the fifth conductive component 5, a surface layer containing a metal such as Ag (silver) may be provided (illustration omitted). In the illustrated example, the fifth conductive component 5 is positioned between the first conductive component 1 and the fourth terminal 41 in the first direction x.

[0098] The fifth conductive component 5 may have a fifth terminal 51 and a fifth pad 52. The fifth terminal 51 is exposed to the outside of the sealing resin 8 and can protrude from the sixth surface 86 of the resin towards the second side y2 in the second direction y. The fifth terminal 51 may extend along the second direction y. The fifth pad 52 is covered by the sealing resin 8.

[0099] The fifth pad 52 is connected to the second electrode 92 via wire 76. The fifth pad 52 is connected to the fifth electrode 95 via wire 77. Thus, the fifth terminal 51 can function as the source sensing terminal of the first semiconductor element 9A and the second semiconductor element 9B.

[0100] The second terminal 21 can be located on a second side x2 relative to the first terminal 11 in the first direction x. A plurality of fourth terminals 41 can be located on a first side x1 relative to the first terminal 11 in the first direction x. A fifth terminal 51 can be located between the first terminal 11 and the plurality of fourth terminals 41 in the first direction x. When viewed in the third direction z, wire 71 can cross wires 74, 75, and 77. When viewed in the third direction z, wire 76 can cross wires 74 and 75.

[0101] According to this embodiment, the multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. By including a diode element 9C, a diode element 9C of a specification suitable for providing electrical protection to the first semiconductor elements 9A and second semiconductor elements 9B can be appropriately selected. By including a fifth terminal 51, the first semiconductor elements 9A and second semiconductor elements 9B can be driven and controlled more appropriately.

[0102] Figure 23 This represents a first modification of the semiconductor device A6. In this modification, the semiconductor device A61 may omit the fifth conducting component 5, the wire 76, and the wire 77 found in the semiconductor device A6. The third electrode 93 may be located on a first side x1 relative to the second electrode 92 in the first direction x.

[0103] The second terminal 21 can be located on a second side x2 relative to the first terminal 11 in the first direction x. A plurality of fourth terminals 41 can be located between the first terminal 11 and the second terminal 21 in the first direction x. When viewed in the third direction z, wires 71, 74, and 75 can be non-intersecting.

[0104] According to this modification, the multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, when viewed in the third direction z, the wires 71, 74, and 75 do not cross, the manufacture of the semiconductor device A61 becomes easier, and the wires 71, 74, and 75 can be more reliably insulated.

[0105] Figure 24 This represents a second modification of the semiconductor device A6. In this modification, the semiconductor device A62 may include a fifth conducting member 5A and a fifth conducting member 5B.

[0106] The fifth conductive component 5A comprises a conductive material. The conductive material may include, for example, metals such as Cu (copper), Ni (nickel), and Fe (iron), or alloys thereof. A surface layer containing a metal such as Ag (silver) may be provided at appropriate locations on the surface of the fifth conductive component 5A (illustration omitted). In the illustrated example, the fifth conductive component 5A is positioned between the first conductive component 1 and the fourth terminal 41 in the first direction x.

[0107] The fifth conductive component 5A may have a fifth terminal 51A and a fifth pad 52A. The fifth terminal 51A is exposed to the outside of the sealing resin 8 and can protrude from the sixth surface 86 of the resin towards the second side y2 in the second direction y. The fifth terminal 51A may extend along the second direction y. The fifth pad 52A is covered by the sealing resin 8.

[0108] The fifth pad 52A is connected to the second electrode 92 via wire 76. The fifth terminal 51A can function as the source sensing terminal of the first semiconductor element 9A.

[0109] The fifth conductive component 5B comprises a conductive material. The conductive material may include, for example, metals such as Cu (copper), Ni (nickel), and Fe (iron), or alloys thereof. A surface layer containing a metal such as Ag (silver) may be provided at appropriate locations on the surface of the fifth conductive component 5B (illustration omitted). In the illustrated example, the fifth conductive component 5B is positioned between the second conductive component 2 and the fourth terminal 41 in the first direction x.

[0110] The fifth conductive component 5B may have a fifth terminal 51B and a fifth pad 52B. The fifth terminal 51B is exposed to the outside of the sealing resin 8 and can protrude from the sixth surface 86 of the resin towards the second side y2 in the second direction y. The fifth terminal 51B may extend along the second direction y. The fifth pad 52B is covered by the sealing resin 8.

[0111] The fifth pad 52B is connected to the fifth electrode 95 via wire 77. The fifth terminal 51B can function as the source sensing terminal of the second semiconductor element 9B.

[0112] The third electrode 93 can be located on the first side x1 of the first direction x relative to the second electrode 92. When viewed in the third direction z, wires 71, 74, 75, 76 and 77 can be non-intersecting.

[0113] According to this modification, the multiple first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. In addition, when viewed in the third direction z, the wires 71, 74, 75, 76 and 77 do not cross, the manufacture of the semiconductor device A62 becomes easier, and the wires 71, 74, 75, 76 and 77 can be more reliably insulated.

[0114] Figures 25-32 This refers to the semiconductor device according to the seventh embodiment of this disclosure. The semiconductor device A7 of this embodiment is characterized by having a substrate 6, and has a structure different from that of the embodiments described above.

[0115] The substrate 6 may have, for example, an insulating layer 60, a surface metal layer 61, and a back metal layer 62. The substrate 6 may be, for example, a DBC (Direct Bonded Copper) substrate, an AMB (Active Metal Brazing Substrate) substrate, etc.

[0116] The insulating layer 60 comprises insulating materials such as ceramics. The surface metal layer 61 may comprise a metal such as Cu (copper) and may be laminated on the first side z1 of the third direction z of the insulating layer 60. The back metal layer 62 may comprise a metal such as Cu (copper) and may be laminated on the second side z2 of the third direction z of the insulating layer 60.

[0117] The surface metal layer 61 may include a first portion 611, a second portion 612, and a third portion 613. The first portion 611 may occupy most of the surface metal layer 61. The second portion 612 may be smaller than the first portion 611 and may be located on a second side y2 relative to the first portion 611 in the second direction y. The third portion 613 may be located on a second side y2 relative to the first portion 611 in the second direction y, and may be located on a second side x2 relative to the second portion 612 in the first direction x. The third portion 613 may be smaller than the first portion 611 or larger than the second portion 612. The third portion 613 may be an elongated shape with the first direction x as its long side.

[0118] The back metal layer 62 can be exposed from the second side z2 of the resin second side 82 toward the third side z.

[0119] The first terminal 11 and the second terminal 21 can be in a shape that bends towards the first side z1 of the z direction.

[0120] The third conductive component 3 may have a third terminal 31 and multiple connecting portions 32. The third terminal 31 may protrude from the fifth surface 85 of the resin toward the first side y1 in the second direction y. The multiple connecting portions 32 may be conductively connected to the first part 611 via a conductive bonding material 39, for example. The conductive bonding material 39 may be, for example, solder, silver paste, etc. The connecting portions 32 may be conductively connected to the first part 611 by laser bonding, ultrasonic bonding, etc.

[0121] The fourth terminal 41 is located along the second direction y, and its size in the first direction x can be larger than that of the first terminal 11 and the first pad 12. The fourth pad portion 42 may include multiple curved portions, and the portion bulging out to the second side z2 in the third direction z can be electrically connected to the second electrode 92 and the fifth electrode 95. The fourth conductive member 4 may include a portion located on the first side z1 in the third direction z relative to the third portion 613, and has a shape that spans the third portion 613 in the second direction y.

[0122] The fourth conductive component 4 may include a fifth terminal 49. The fifth terminal 49 may protrude from the sixth resin surface 86 toward the second side y2 in the second direction y. The fifth terminal 49 may be in a shape bent toward the first side z1 in the third direction z. The fifth terminal 49 may be located between the fourth terminal 41 and the second terminal 21 in the first direction x.

[0123] The first semiconductor element 9A and the second semiconductor element 9B can be mounted on the first part 611. The first electrode 91 and the fourth electrode 94 can be electrically connected to the first part 611.

[0124] The third electrode 93 can be connected to the first pad 12 via a wire 71. A portion of the wire 71 can be bonded to the second part 612.

[0125] The sixth electrode 96 can be connected to the third part 613 via the wire 72. The third part 613 can be connected to the second pad 22 via the wire 79. Thus, the first conductive component 1 is connected to the sixth electrode 96 via the wire 79, the third part 613, and the wire 72.

[0126] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. The back metal layer 62 is insulated from the first semiconductor elements 9A and second semiconductor elements 9B by the insulating layer 60, and is exposed from the second resin surface 82 to the second side z2 in the third direction z. Therefore, by bonding the back metal layer 62 to a heat sink (not shown), heat dissipation of the semiconductor device A7 can be promoted. It should be understood from this embodiment that the specific structure of the semiconductor device disclosed herein is not limited.

[0127] The semiconductor device disclosed herein is not limited to the embodiments described above. The specific structure of each part of the semiconductor device disclosed herein can be freely modified in various ways.

[0128] [Postscript 1]

[0129] A semiconductor device A1, comprising:

[0130] First semiconductor element 9A;

[0131] Second semiconductor element 9B;

[0132] The first conductive component 1 has a first terminal 11;

[0133] The second conductive component 2 has a second terminal 21;

[0134] The third conductive component 3 has a third terminal 31;

[0135] The fourth conductive component 4 has a fourth terminal 41; and

[0136] Sealing resin 8 covers the first semiconductor element 9A and the second semiconductor element 9B.

[0137] The first semiconductor element 9A has a first electrode 91, a second electrode 92, and a third electrode 93 for controlling the conduction and insulation of the first electrode 91 and the second electrode 92.

[0138] The second semiconductor element 9B has a fourth electrode 94 and a fifth electrode 95, and a sixth electrode 96 for controlling the conduction and insulation of the fourth electrode 94 and the fifth electrode 95.

[0139] The third terminal 31 is connected to the first electrode 91 and the fourth electrode 94.

[0140] The fourth terminal 41 is connected to the second electrode 92 and the fifth electrode 95.

[0141] The first terminal 11 is connected to the third electrode 93 and insulated from the sixth electrode 96.

[0142] The second terminal 21 is connected to the sixth electrode 96 and is insulated from the third electrode 93.

[0143] [Postscript 2]

[0144] According to the semiconductor device A1 described in Appendix 1, wherein,

[0145] The first semiconductor element 9A is a bipolar transistor.

[0146] The second semiconductor element 9B is a unipolar n-type transistor.

[0147] [Postscript 3]

[0148] According to the semiconductor device A1 described in Appendix 2, wherein,

[0149] The first semiconductor element 9A is an IGBT.

[0150] The second semiconductor element 9B is a MOSFET.

[0151] [Postscript 4]

[0152] According to the semiconductor device A1 described in Appendix 3, wherein...

[0153] The first semiconductor device 9A is a Si-IGBT.

[0154] The second semiconductor element 9B is a SiC-MOSFET.

[0155] [Postscript 5]

[0156] The semiconductor device A1 according to any one of Appendices 1 to 4, wherein,

[0157] The third conductive component 3 has an island portion 30 on which the first semiconductor element 9A and the second semiconductor element 9B are mounted.

[0158] [Postscript 6]

[0159] According to the semiconductor device A2 described in Appendix 5, wherein,

[0160] The first semiconductor element 9A includes a body diode 901 that is positively oriented from the fourth terminal 41 toward the third terminal 31.

[0161] [Postscript 7]

[0162] According to the semiconductor device A3 described in Appendix 5, wherein...

[0163] The second semiconductor element 9B includes a Schottky barrier diode 901 that is positively oriented from the fourth terminal 41 toward the third terminal 31.

[0164] [Postscript 8]

[0165] According to the semiconductor device A4 described in Appendix 5, wherein...

[0166] It also includes a diode element 9C, which is mounted on the island portion 30 and is oriented in the direction from the fourth terminal 41 toward the third terminal 31.

[0167] [Postscript 9]

[0168] The semiconductor device A5 according to any one of Appendices 1 to 4, wherein,

[0169] The third conductive component 3 has an island portion 30 on which the first semiconductor element 9A and the second semiconductor element 9B are mounted.

[0170] The surface of the island portion 30 exposed from the sealing resin 8 constitutes the third terminal 31.

[0171] [Postscript 10]

[0172] According to the semiconductor device A6 described in Appendix 9, wherein...

[0173] It also includes a diode element 9C, which is mounted on the island portion 30 and is oriented in the direction from the fourth terminal 41 toward the third terminal 31.

[0174] [Postscript 11]

[0175] The semiconductor device A7 according to any one of Appendices 1 to 4, wherein...

[0176] The substrate 6 includes an insulating layer 60 and a surface metal layer 61 and a back metal layer 62 stacked therebetween, sandwiching the insulating layer 60.

[0177] The surface metal layer 61 includes a sixth conductive component 611, a seventh conductive component 612, and an eighth electrode conductive component 613 that are separated from each other.

[0178] The first semiconductor element 9A and the second semiconductor element 9B are mounted on the sixth conductive component 611.

[0179] [Postscript 12]

[0180] According to the semiconductor device A7 described in Appendix 11, wherein,

[0181] The third conductive component 3 is conductively connected to the sixth conductive component 611.

[0182] [Postscript 13]

[0183] According to Appendix 11 or 12, the semiconductor device A7, wherein,

[0184] The conduction path of the first conducting component 1 and the third electrode 93 is connected via the seventh conducting component 612.

[0185] [Postscript 14]

[0186] The semiconductor device A7 according to any one of Appendices 11 to 13, wherein,

[0187] The second conductive component 2 and the sixth electrode 96 are connected via the eighth electrode conductive component 613.

[0188] [Postscript 15]

[0189] The semiconductor device A7 according to any one of Appendices 11 to 14, wherein,

[0190] The fourth conductive component 4 also includes a fifth terminal 49 that is separate from the fourth terminal 41 and protrudes from the sealing resin 8.

[0191] Symbol Explanation

[0192] A1, A2, A3, A4, A5, A6, A7—Semiconductor devices; 1—First conducting component; 2—Second conducting component; 3—Third conducting component; 4—Fourth conducting component; 5, 5A—Fifth conducting component; 6—Substrate; 8—Sealing resin; 9A—First semiconductor element; 9B—Second semiconductor element; 9C—Diode element; 11—First terminal; 12—First pad; 21—Second terminal; 22—Second pad; 30—Island portion; 31—Third terminal; 32—Connecting portion; 39—Conductive bonding material; 41—Fourth terminal; 42—Fourth pad portion; 49—Fifth terminal; 51, 51A, 51B—Fifth terminal; 52, 52A, 52B—Fifth pad; 60—Insulating layer; 61—Surface metal layer; 62—Back metal layer; 71, 72, 73, 74, 75, 76, 77. 79—Wire; 81—First resin surface; 82—Second resin surface; 83—Third resin surface; 84—Fourth resin surface; 85—Fifth resin surface; 86—Sixth resin surface; 90A—First main body; 90B—Second main body; 91—First electrode; 92—Second electrode; 93—Third electrode; 94—Fourth electrode; 95—Fifth electrode; 96—Sixth electrode; 99—Conductive bonding material; 301—Through hole; 611—First part; 612—Second part; 613—Third part; 801—Through hole; 802—Recess; 803—Recess; 901—Diode; 902—Body diode; 903—Schottky barrier diode; x—First direction; x1—First side; x2—Second side; y—Second direction; y1—First side; y2—Second side; z—Third direction; z1—First side; z2—Second side.

Claims

1. A semiconductor device, characterized in that, have: First semiconductor element; Second semiconductor element; A first conductive component has a first terminal; The second conductive component has a second terminal; The third conductive component has a third terminal; The fourth conductive component has a fourth terminal; and A sealing resin is used to cover the first semiconductor element and the second semiconductor element. The first semiconductor element has a first electrode, a second electrode, and a third electrode for controlling the conduction and insulation of the first electrode and the second electrode. The second semiconductor element has a fourth electrode and a fifth electrode, and a sixth electrode for controlling the conduction and insulation of the fourth electrode and the fifth electrode. The third terminal is connected to the first electrode and the fourth electrode. The fourth terminal is connected to both the second electrode and the fifth electrode. The first terminal is connected to the third electrode and insulated from the sixth electrode. The second terminal is connected to the sixth electrode and is insulated from the third electrode.

2. The semiconductor device according to claim 1, characterized in that, The first semiconductor element is a bipolar transistor. The second semiconductor element is a unipolar n-type transistor.

3. The semiconductor device according to claim 2, characterized in that, The first semiconductor element is an IGBT. The second semiconductor element is a MOSFET.

4. The semiconductor device according to claim 3, characterized in that, The first semiconductor element is a Si-IGBT. The second semiconductor element is a SiC-MOSFET.

5. The semiconductor device according to any one of claims 1 to 4, characterized in that, The third conductive component has an island portion on which the first semiconductor element and the second semiconductor element are mounted.

6. The semiconductor device according to claim 5, characterized in that, The first semiconductor element includes a body diode that is positively oriented from the fourth terminal toward the third terminal.

7. The semiconductor device according to claim 5, characterized in that, The second semiconductor element includes a Schottky barrier diode with the direction of forward orientation from the fourth terminal toward the third terminal.

8. The semiconductor device according to claim 5, characterized in that, It also includes a diode element mounted on the island portion, with the direction from the fourth terminal toward the third terminal being positive.

9. The semiconductor device according to any one of claims 1 to 4, characterized in that, The third conductive component has an island portion on which the first semiconductor element and the second semiconductor element are mounted. The surface of the island portion exposed from the sealing resin constitutes the third terminal.

10. The semiconductor device according to claim 9, characterized in that, It also includes a diode element mounted on the island portion, with the direction from the fourth terminal toward the third terminal being positive.

11. The semiconductor device according to any one of claims 1 to 4, characterized in that, The substrate includes an insulating layer and a surface metal layer and a back metal layer laminated therebetween, sandwiching the insulating layer. The surface metal layer includes a sixth conductive component, a seventh conductive component, and an eighth electrode conductive component that are separated from each other. The first semiconductor element and the second semiconductor element are mounted on the sixth conductive component.

12. The semiconductor device according to claim 11, characterized in that, The third conductive component is conductively connected to the sixth conductive component.

13. The semiconductor device according to claim 11 or 12, characterized in that, The conduction path of the first conducting component and the third electrode is connected via the seventh conducting component.

14. The semiconductor device according to any one of claims 11 to 13, characterized in that, The second conductive component and the sixth electrode are connected via the eighth electrode conductive component.

15. The semiconductor device according to any one of claims 11 to 14, characterized in that, The fourth conductive component also includes a fifth terminal that is separate from the fourth terminal and protrudes from the sealing resin.

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