Electrostatic chuck for wafer bow control and non-uniformity improvement using polarity switching and / or polarity balancing

Abstract

A substrate processing system includes an electrostatic chuck (ESC) including a base plate, a ceramic top plate, and a bonding layer disposed between the base plate and the ceramic top plate. The ceramic top plate includes a first electrostatic electrode and a second electrostatic electrode embedded therein. A controller is configured to clamp a substrate during one of N portions of substrate processing by supplying a first polarity to the first electrostatic electrode of the ESC and a second polarity to the second electrostatic electrode of the ESC, where N is an integer greater than 1. During another of the N portions of substrate processing, the controller is configured to clamp the substrate by supplying the second polarity to the first electrostatic electrode of the ESC and the first polarity to the second electrostatic electrode of the ESC.

Description

[0001] Cross-references to related applications This case claims the benefit of U.S. Provisional Application No. 63 / 627,499, filed January 31, 2024. The entire contents of the aforementioned application are incorporated herein by reference. Technical Field

[0002] This invention relates to substrate processing systems, and more particularly to electrostatic chucks (ESCs) that have polarity exchange and / or polarity balance during substrate processing. Background Technology

[0003] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors within the scope described in this background section, as well as aspects of the specification that could not be identified as prior art at the time of filing, are neither express nor implied admissions of prior art to this disclosure.

[0004] Substrate processing systems are used to process substrates, such as semiconductor wafers. This processing may include deposition, etching, cleaning, and / or other treatments. During processing, the substrate is placed on an electrostatic chuck (ESC) within the processing chamber of the substrate processing system. A mixture of process gases is introduced into the processing chamber using gas delivery equipment. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.

[0005] During processing, the substrate is clamped to the ceramic top plate of the ESC. To clamp the substrate, a direct current (DC) voltage of the same magnitude but opposite polarity is output to a pair of electrostatic electrodes embedded in the ceramic top plate of the ESC. For example, during high-bow and long deposition processes, electrostatic clamping is used to maintain constant bow control and prevent back-side discharge, back-side deposition, and / or arcing. For example, 3D NAND fabrication may involve high-bow substrates and long deposition processes for thick layers. In these and other processes, it is important to limit substrate non-uniformity. Summary of the Invention

[0006] The substrate processing system includes an electrostatic chuck (ESC) comprising a base plate, a ceramic top plate, and a bonding layer disposed between the base plate and the ceramic top plate. The ceramic top plate includes a first electrostatic electrode and a second electrostatic electrode embedded therein. A controller is configured to clamp the substrate during one of N portions of substrate processing by supplying a first polarity to the first electrostatic electrode of the ESC and a second polarity to the second electrostatic electrode of the ESC, where N is an integer greater than 1. During another of the N portions of substrate processing, the controller is configured to clamp the substrate by supplying a second polarity to the first electrostatic electrode of the ESC and a first polarity to the second electrostatic electrode of the ESC.

[0007] In some examples, the process includes deposition. The first and second electrostatic electrodes have a semi-circular shape. A plasma generator is configured to generate plasma. A controller is configured to ignite the plasma during one of the N portions of the process, extinguish the plasma between one of the N portions and another of the N portions of the process, and re-ignite the plasma during the other of the N portions of the process.

[0008] Among other features, the controller is configured to release the clamping grip on the substrate after the plasma is extinguished. The controller is also configured to clamp the substrate before the plasma is ignited during the other of the N portions of the process.

[0009] The substrate processing tool includes S processing chambers, each containing S electrostatic discharge cells (ESCs), where S is an integer greater than 1. Each of the S ESCs includes a base plate, a ceramic top plate, and a bonding layer disposed between the base plate and the ceramic top plate. The ceramic top plate of each of the S ESCs includes a first electrostatic electrode and a second electrostatic electrode. A controller is configured to clamp the S substrates in the S processing chambers, respectively, by supplying a first polarity to the first electrostatic electrode of the S ESCs and a second polarity to the second electrostatic electrode of the S ESCs, during one of the N portions of the S processing of the S substrates in the S processing chambers, where N is an integer greater than 1. During another of the N portions of the S processing of the S substrates, the controller is configured to clamp the S substrates in the S processing chambers, respectively, by supplying a second polarity to the first electrostatic electrode of the S ESCs and a first polarity to the second electrostatic electrode of the S ESCs.

[0010] Among other features, the S processes include deposition. The S plasma generators are configured to generate plasma in the S processing chambers. The controller is configured to ignite the plasma using the S plasma generators during one of the N portions of the S processes in the S processing chambers, extinguish the plasma in the S processing chambers between one and another of the N portions, and ignite the plasma in the S processing chambers during the other of the N portions of the S processes.

[0011] Among other features, the controller is configured to release the clamping of the S substrates after the plasma is extinguished. The controller is also configured to clamp the S substrates before the plasma is ignited during the other of the N portions of the S processes. The first and second electrostatic electrodes in each of the S processing chambers are energized in a balanced configuration.

[0012] Among other features, S equals 4, the S processing chambers are arranged in a 2×2 array, and the first and second electrostatic electrodes in each of the S processing chambers are energized in a balanced configuration.

[0013] Among other features, S equals 4, the S processing chambers are arranged in a 2×2 array, and the first and second electrostatic electrodes in each of the S processing chambers are energized by opposing electrodes of opposite polarity in adjacent chambers of the S processing chambers.

[0014] Among other features, S equals 4, the S processing chambers are arranged in a 2×2 array, and the first and second electrostatic electrodes in adjacent chambers of the S processing chambers are rotated 90º relative to each other.

[0015] A method for clamping a substrate in a substrate processing system includes: providing an electrostatic chuck (ESC) comprising a base plate, a top plate, and a bonding layer disposed between the base plate and the top plate, wherein the top plate includes a first electrostatic electrode and a second electrostatic electrode embedded therein. During one of N portions of the substrate processing, the method includes clamping the substrate by supplying a first polarity to the first electrostatic electrode of the ESC and a second polarity to the second electrostatic electrode of the ESC, wherein N is an integer greater than 1. During another of the N portions of the substrate processing, the method includes clamping the substrate by supplying a second polarity to the first electrostatic electrode of the ESC and a first polarity to the second electrostatic electrode of the ESC.

[0016] Among other features, the process includes deposition. The first and second electrostatic electrodes have a semi-circular shape. The method includes igniting the plasma during one of the N portions of the process; extinguishing the plasma between one of the N portions and another of the N portions of the process; and re-igniting the plasma during the other of the N portions of the process.

[0017] Among other features, the method includes releasing the clamp on the substrate after the plasma is extinguished. The method also includes clamping the substrate during the other of the N portions of the process before igniting the plasma. N=2.

[0018] A method for clamping a substrate in a substrate processing tool includes providing S processing chambers, each containing S electrostatic discharge cells (ESCs), where S is an integer greater than 1. Each of the S ESCs includes a base plate, a top plate, and a bonding layer disposed between the base plate and the top plate. The top plate of each of the S ESCs includes a first electrostatic electrode and a second electrostatic electrode. During one of N portions of S processing of the S substrates in the S processing chambers, the method includes clamping the S substrates in the S processing chambers respectively by supplying a first polarity to the first electrostatic electrode of the S ESCs and a second polarity to the second electrostatic electrode of the S ESCs, where N is an integer greater than 1. During another of the N portions of S processing of the S substrates, the S substrates in the S processing chambers are clamped respectively by supplying a second polarity to the first electrostatic electrode of the S ESCs and a first polarity to the second electrostatic electrode of the S ESCs.

[0019] Among other features, the S processes include deposition. Among other features, the method includes igniting plasma using S plasma generators during one of the N portions of the S processes in the S processing chambers; extinguishing the plasma in the S processing chambers between the one portion and the other portion of the N portions; and igniting plasma in the S processing chambers during the other portion of the N portions of the S processes.

[0020] Among other features, the method includes releasing the clamps on the S substrates after the plasma is extinguished. Among other features, the method includes clamping the S substrates before igniting the plasma during the other of the N portions of the S processes. A first electrostatic electrode and a second electrostatic electrode in each of the S process chambers are energized in a balanced configuration.

[0021] In other features, S equals 4, and the method includes arranging the S processing chambers in a 2×2 array and energizing the first and second electrostatic electrodes in each of the S processing chambers in a balanced configuration.

[0022] In other features, S equals 4, and the method includes arranging the S processing chambers in a 2×2 array and energizing the first and second electrostatic electrodes in each of the S processing chambers with opposite polarities in adjacent chambers.

[0023] Among other features, S equals 4, and the method includes arranging the S processing chambers in a 2×2 array, and orienting the first and second electrostatic electrodes of adjacent chambers in the S processing chambers at 90º relative to each other. N=2.

[0024] The further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0025] This disclosure will be more fully understood in light of the detailed description and accompanying drawings, in which: Figure 1 This is a functional block diagram of an example substrate processing system with an ESC having electrostatic electrodes, in accordance with this disclosure. Figure 2A The following is a plan view of an example of an ESC ceramic top plate containing an embedded electrostatic electrode according to the present disclosure, wherein the electrostatic electrode is biased by a DC voltage having a first polarity and a second polarity. Figure 2B This is a plan view of the ESC ceramic top plate after the first polarity and the second polarity of the electrostatic electrodes have been exchanged in accordance with this disclosure; Figure 3AA plan view of an example semiconductor tool comprising multiple processing chambers having an ESC, in accordance with this disclosure; Figure 3B A plan view of a semiconductor tool following the first and second polarities of the electrostatic electrodes in the exchange processing chamber, according to this disclosure; Figure 4A This is a plan view of another example of a semiconductor tool comprising multiple processing chambers having a top plate, the top plate including electrostatic electrodes that are balanced and exchanged during processing; Figure 4B A plan view of a semiconductor tool after the first polarity and second polarity of the electrostatic electrodes in the exchange processing chamber, according to this disclosure; Figure 5 Example diagram illustrating the variation of clamping voltage over time according to this disclosure; Figure 6 To illustrate the variation of substrate radius with respect to the improved substrate thickness after deposition according to this disclosure, both without and with exchange / equilibration; and Figure 7 This is a flowchart illustrating an example of a method for controlling an ESC electrostatic electrode during substrate processing in accordance with this disclosure.

[0026] In the accompanying drawings, reference numerals may be used repeatedly to identify similar and / or identical elements. Detailed Implementation

[0027] This disclosure relates to systems and methods for controlling the voltage output to a pair of electrostatic electrodes embedded in the top plate of an electrostatic chuck (ESC). During clamping in some processes, a high DC voltage (e.g., 1000V) may be applied to the electrostatic electrodes. Due to the asymmetry between the sides of the ESC, the process may exhibit non-uniformity, such as uneven deposition thickness.

[0028] Systems and methods for controlling the voltage output to a pair of electrostatic electrodes significantly reduce nonuniformity (e.g., a reduction of 2% to 3%). In some examples, nonuniformity refers to thickness variation. For semiconductor tools with a single processing chamber, polarity reversal is performed. By way of example only, for a 26 kA deposited film, a deposition process with nonuniformity exceeding 2.5 kA is reduced to less than 2 kA. For semiconductor tools with multiple processing chambers or stations, polarity reversal and / or polarity balancing can be performed to reduce nonuniformity per station and reduce crosstalk between stations.

[0029] During one portion of the substrate processing, the controller outputs DC voltages of the same amplitude but opposite polarity to the pair of electrostatic electrodes. During another portion of the same substrate processing, the controller swaps or reverses the polarity of the DC voltages supplied to the pair of electrostatic electrodes. Swapping the DC voltages during substrate processing reduces processing non-uniformity (e.g., such as deposited film thickness). In some examples, the processing includes chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD), but other processes may also be performed.

[0030] In some examples, the semiconductor tool includes a single processing chamber with an ESC (containing two electrostatic electrodes). In other examples, the semiconductor tool includes multiple processing chambers or stations arranged adjacent to each other. For example, four processing chambers are arranged in an array (e.g., rows and columns of a 2×2 array). In other examples, the semiconductor tool may include additional or fewer processing chambers arranged in other configurations. During substrate processing, the polarity of the DC voltage supplied to the electrostatic electrodes of the ESC is simultaneously exchanged.

[0031] In the example containing four processing chambers, the electrostatic electrodes of two of the processing chambers are oriented at a predetermined angle relative to a line parallel to the columns of the array. The electrostatic electrodes of the other two processing chambers are oriented at a predetermined angle relative to a line parallel to the rows of the array.

[0032] In some examples, the electrostatic electrodes in each processing chamber are also balanced. As used herein, the term balanced refers to the situation where the electrostatic electrodes in each processing chamber of a semiconductor tool face (or substantially face, as described below) electrostatic electrodes with opposite polarities in adjacent processing chambers.

[0033] For reference Figure 1 The substrate processing system 100 includes a processing chamber 102 containing a gas distribution device 104 and an electrostatic chuck (ESC) 106. During operation, a substrate 108 is disposed on and clamped to the ESC 106. The ESC 106 includes a base plate 110. In some examples, the base plate 110 is made of a conductive material (e.g., aluminum). The base plate 110 supports a ceramic top plate 112, which may be made of ceramic or another plasma-resistant material.

[0034] A bonding layer 114 bonds the ceramic top plate 112 to the bottom plate 110. The ceramic top plate 112 includes a pair of electrostatic electrodes 113 embedded therein, which are energized or de-energized to clamp or release the substrate 108 on the ceramic top plate 112, respectively. The bottom plate 110 may include one or more coolant channels 116 for allowing coolant to flow through the bottom plate 110 to control the substrate temperature. In some examples, one or more edge rings 118 are arranged around the ESC 106 to control the plasma shape.

[0035] The gas delivery system 130 includes one or more gas sources 132. Gas sources 132 supply one or more mixtures of process gases. For deposition processes, the process gas mixture may include carrier gas, inert gas, deposition precursor gas, etc. For etching processes, the process gas mixture may include carrier gas, inert gas, etching gas, etc. Gas sources 132 are connected to manifold 140 via flow metering devices 134 (e.g., mass flow controllers and valves). The output of manifold 140 is fed to gas distribution device 104.

[0036] In some examples, the vapor delivery system 170 includes one or more vapor delivery sources that supply vapor to manifold 140 or a gas distribution device 104 connected downstream of manifold 140. In some examples, the vapor delivery system 170 includes one or more ampoules 174, a vaporizer 176, and a flow metering device 178 to controllably supply vapor to the processing chamber.

[0037] In some examples, temperature controller 142 is connected to heating element 144 (e.g., thermally controlled element (TCE) or resistance heater) disposed in ceramic top plate 112. Temperature controller 142 can be used to supply power to heating element 144 to control the temperature of ESC 106 and substrate 108 during processing. Temperature controller 142 also operates coolant assembly 146 to control coolant flow through coolant channel 116. For example, coolant assembly 146 may include a coolant pump and coolant container (not shown). Temperature controller 142 operates coolant assembly 146 to selectively flow coolant through coolant channel 116 to cool ESC 106.

[0038] Valve 150 and pump 152 are connected to gas line 148 (e.g., exhaust line) and are used to control the pressure within processing chamber 102 and / or to expel reactants from processing chamber 102. Plasma generator 154 includes radio frequency (RF) source 156 to output RF voltage / power to matching network 158. Matching network 158 matches the impedance of RF source 156 to the impedance of the load comprising the processing chamber and plasma. Controller 160 can be used to monitor system parameters and control components of substrate processing system 100 based on the recipe. One or more robots 161 can be used to transport substrates onto ESC 106 and remove substrates from ESC 106 via ports (not shown).

[0039] The gas distribution device 104 includes a gas chamber 182 that distributes gas from the gas delivery system 130 or vapor from the vapor delivery system 170 to a gas through-hole 184 passing through an electrode 186 (grounded). In some examples, the electrode 186 comprises a circular plate made of a conductive material that is shorted to ground.

[0040] For reference Figure 2AThe ceramic top plate 112 of the ESC includes a first electrode 113A and a second electrode 113B. In some examples, the first electrode 113A and the second electrode 113B have a semi-circular shape with their flat edges facing each other (with a gap between them) and their curved edges facing outwards, but other shapes may also be used (e.g., a rectangle may be used for a rectangular ESC).

[0041] exist Figure 2A During the first part of the processing, the first electrode 113A has a positive polarity (or negative polarity), while the second electrode 113B has a negative polarity (or positive polarity). Figure 2B During the second part of the processing, the first electrode 113A has a negative polarity (or a positive polarity), while the second electrode 113B has a positive polarity (or a negative polarity).

[0042] In some examples, the first part of the process roughly corresponds to the first half of the process, and the second part of the process corresponds to the second half of the process. In other examples, the process is divided into N parts, and the polarity is switched N times during the process (where N is an integer greater than 1). In some examples, N is an even number greater than 2. It should be understood that a trade-off must be made between reducing non-uniformity and the time cost (which is required to extinguish the plasma, loosen the substrate clamp, and re-clamp the substrate with the opposite polarity). In some examples, the process involves depositing a film on substrate 108, but other types of processes can be performed with or without plasma.

[0043] For reference Figure 3A and 3B The semiconductor tool 200 includes a plurality of processing chambers 210-1, 210-2, 210-3, and 210-4. Although four are shown, additional or fewer processing chambers may be used. In some examples, processing chambers 210-1, 210-2, 210-3, and 210-4 are arranged in a 2×2 array with rows and columns. Processing chambers 210-1 and 210-3, and processing chambers 210-2 and 210-4, are located diagonally opposite each other in the array.

[0044] In some examples, the electrostatic electrodes of processing chambers 210-1 and 210-3 are rotated 90° relative to the electrostatic electrodes of processing chambers 210-2 and 210-4. In some examples, the electrostatic electrodes of processing chambers 210-1 and 210-3 are rotated counterclockwise by a predetermined offset angle relative to a line parallel to the columns of the array. In some examples, the electrostatic electrodes of processing chambers 210-1 and 210-3 are rotated counterclockwise by a predetermined offset angle relative to a line parallel to the rows of the array. In some examples, the predetermined offset angle is in the range of 5° to 60°.

[0045] exist Figure 3ADuring the first part of the process, the electrodes 113-A1, 113-A2, 113-A3, and 113-A4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a first polarity (e.g., negative or positive polarity), while the electrodes 113-B1, 113-B2, 113-B3, and 113-B4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a second polarity (e.g., positive or negative polarity).

[0046] exist Figure 3B During the second part of the process, the electrodes 113-A1, 113-A2, 113-A3, and 113-A4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a second polarity (e.g., positive or negative polarity), while the electrodes 113-B1, 113-B2, 113-B3, and 113-B4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a first polarity (e.g., negative or positive polarity).

[0047] exist Figure 3A and 3B In the example shown, the polarities of the electrostatic electrodes are reversed but not balanced. The electrostatic electrodes in the processing chamber are substantially facing the electrodes of the same polarity in the adjacent processing chamber. Due to a predetermined offset angle, the relative positions of the electrodes are not mirror images, so the electrodes are substantially facing each other. For example, the electrostatic electrode 113-A1 of processing chamber 210-1 is substantially facing the electrode 113-A4 of the same polarity in processing chamber 210-4.

[0048] For reference Figure 4A Up to 4C, an electrostatic electrode can be applied with Figure 3A and 3B Different bias voltages are used to balance the electrodes. Figure 4A During the first part of the process, the electrodes 113-A1, 113-A2, 113-A3, and 113-A4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a first polarity (e.g., negative or positive polarity), while the electrodes 113-B1, 113-B2, 113-B3, and 113-B4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a second polarity (e.g., positive or negative polarity).

[0049] exist Figure 4BDuring the second part of the process, the electrodes 113-A1, 113-A2, 113-A3, and 113-A4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a second polarity (e.g., positive or negative polarity), while the electrodes 113-B1, 113-B2, 113-B3, and 113-B4 of the ceramic top plates 112-1, 112-2, 112-3, and 112-4 each have a first polarity (e.g., negative or positive polarity).

[0050] exist Figure 4A and 4B In the example shown, the polarities of the electrodes are balanced because the electrostatic electrodes of the processing chambers are essentially facing the opposite polarities of the electrodes in adjacent processing chambers (rather than as shown). Figure 3A and 3B Electrodes of the same polarity. For example, the electrostatic electrode 113-A1 of the processing chamber 210-1 is basically facing the electrode 113-A4 of the processing chamber 210-4, which has a different polarity.

[0051] For reference Figure 5 The diagram illustrates an example of DC voltages with a first polarity 260 and a second polarity 262. During the first part of the processing, the DC voltage of the first polarity increases from zero to a positive voltage peak 270 above the steady-state positive voltage 272, and then decreases to the steady-state positive voltage 272. The DC voltage of the first polarity remains at the steady-state positive voltage 272 until a polarity reversal occurs. During the polarity reversal, the DC voltage of the first polarity decreases from the steady-state positive voltage 272 to zero at 274 and remains at zero for a predetermined time. Then, during the second part of the processing, the DC voltage of the first polarity has a similar but reversed half-cycle. The DC voltage of the second polarity is a mirror image of the DC voltage of the first polarity.

[0052] For reference Figure 6 For depositions performed without exchange or equilibrium (left) and with exchange and equilibrium (right), the normalized thickness is shown as a variation with substrate radius. It can be seen that substrate treatment with exchange and equilibrium (right) reduces non-uniformity.

[0053] For reference Figure 7 This diagram illustrates a method flowchart for controlling the electrostatic clamping of one or more substrates on one or more electrostatic discharge cells (ESCs) during substrate processing. At 308, the substrate is transferred to the ESC. At 310, the substrate is clamped by applying a first polarity to a first electrostatic electrode of the ESC and a second polarity to a second electrostatic electrode of the ESC. At 314, the first part of the processing is performed. In some examples, plasma is ignited. At 318, the method determines whether the first part is complete. If not, the method returns to 314.

[0054] If 318 is yes, then the substrate clamping is released at 322. If plasma is used, the plasma is extinguished. At 326, the substrate is clamped by applying a second polarity to the first electrostatic electrode of the ESC and a first polarity to the second electrostatic electrode of the ESC. At 334, the second part of the process is performed. If plasma is used, the plasma is ignited. At 336, the method determines whether the second part is complete. If no, the method returns to 334. If yes, then the substrate clamping is released at 337. If plasma is used, the plasma is extinguished. At 338, the method determines whether the process is complete. If no, the method returns to 310. If yes, the method ends.

[0055] The foregoing description is merely illustrative in nature and is in no way intended to limit this disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon examination of the drawings, specification, and appended claims. It should be understood that one or more steps in the method may be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, while each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of this disclosure may be implemented in and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for each other remains within the scope of this disclosure.

[0056] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including “connection,” “joint,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “set.” Unless the relationship between the first and second elements is explicitly described as “direct,” the relationship described in the above disclosure can be a direct relationship, where no other intermediate element exists between the first and second elements, but it can also be an indirect relationship, where one or more intermediate elements exist between the first and second elements (spatially or functionally). As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the use of a non-exclusive logical OR (A or B or C) logic and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0057] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing apparatus, which includes one or more semiconductor processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics may be referred to as a “controller”, which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any process disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of semiconductor tools and other semiconductor transfer tools, and / or loading locks that are connected to or docked with a specific system.

[0058] In a broad sense, a controller can be defined as an electronic device having various integrated circuits, logic, non-transient memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0059] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of semiconductor tool to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on-site communicating with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control the process on-site.

[0060] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary rinsing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfering edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0061] As described above, depending on one or more processing steps to be performed by the semiconductor tool, the controller may communicate with one or more other semiconductor tool circuits or modules, other semiconductor tool components, cluster semiconductor tools, other semiconductor tool interfaces, adjacent semiconductor tools, neighboring semiconductor tools, semiconductor tools located throughout the plant, a host computer, another controller, or semiconductor tools used in the transport of materials to and from the semiconductor tool location and / or loading port in the semiconductor manufacturing plant.

Claims

1. A substrate processing system, comprising: An electrostatic chuck (ESC) includes a base plate, a top plate, and a bonding layer disposed between the base plate and the top plate. The top plate includes a first electrostatic electrode and a second electrostatic electrode embedded therein; as well as The controller is configured to: During one of the N portions of the substrate processing, the substrate is clamped by supplying a first polarity to the first electrostatic electrode of the ESC and a second polarity to the second electrostatic electrode of the ESC, where N is an integer greater than 1. as well as During another of the N portions of the processing of the substrate, the second polarity is supplied to the first electrostatic electrode of the ESC and the first polarity is supplied to the second electrostatic electrode of the ESC to clamp the substrate.

2. The substrate processing system of claim 1, wherein the processing includes deposition.

3. The substrate processing system according to claim 1, wherein the first electrostatic electrode and the second electrostatic electrode have a semi-circular shape.

4. The substrate processing system of claim 1, further comprising a plasma generator configured to generate plasma, wherein the controller is configured to: The plasma is ignited during one of the N portions of the process; The plasma is extinguished between one of the N portions of the process and the other of the N portions; and The plasma is re-ignited during one of the N parts of the process.

5. The substrate processing system of claim 4, wherein the controller is configured to release the clamping of the substrate after the plasma is extinguished.

6. The substrate processing system of claim 5, wherein the controller is configured to clamp the substrate prior to ignition of the plasma during the other of the N portions of the processing.

7. The substrate processing system according to claim 1, wherein N=2.

8. A substrate processing tool, comprising: There are S processing chambers, each containing S ESCs, where S is an integer greater than 1; Each of the S ESCs includes a base plate, a top plate, and a bonding layer disposed between the base plate and the top plate. The top plate of the S ESCs includes a first electrostatic electrode and a second electrostatic electrode; as well as The controller is configured to: During one of the N portions of the S processing of the S substrates in the S processing chambers, the S substrates in the S processing chambers are clamped by supplying a first polarity to the first electrostatic electrode of the S ESCs and a second polarity to the second electrostatic electrode of the S ESCs, respectively, where N is an integer greater than 1. as well as During another of the N portions of the S processes on the S substrates, the S substrates in the S processing chambers are clamped by supplying the second polarity to the first electrostatic electrode of the S ESCs and the first polarity to the second electrostatic electrode of the S ESCs, respectively.

9. The substrate processing tool according to claim 8, wherein the S processing comprises deposition.

10. The substrate processing tool of claim 8, further comprising S plasma generators configured to generate plasma in the S processing chambers, wherein the controller is configured to: During one of the N portions of the S processes in the S processing chambers, plasma is ignited using the S plasma generators; The plasma in the S processing chambers is extinguished between one of the N sections and the other of the N sections; and The plasma is ignited in the S processing chambers during the other of the N parts of the S processes.

11. The substrate processing tool of claim 10, wherein the controller is configured to release the clamping of the S substrates after the plasma is extinguished.

12. The substrate processing tool of claim 10, wherein the controller is configured to clamp the S substrates prior to ignition of the plasma during the other of the N portions of the S processing.

13. The substrate processing tool of claim 8, wherein the first electrostatic electrode and the second electrostatic electrode in each of the S processing chambers are energized in a balanced configuration.

14. The substrate processing tool according to claim 8, wherein: S equals 4, and the S processing chambers are arranged in a 2×2 array. The first electrostatic electrode and the second electrostatic electrode in each of the S processing chambers are energized in a balanced configuration.

15. The substrate processing tool according to claim 8, wherein: S equals 4, and the S processing chambers are arranged in a 2×2 array. The first electrostatic electrode and the second electrostatic electrode in each of the S processing chambers are energized by opposing electrodes of opposite polarity in adjacent chambers of the S processing chambers.

16. The substrate processing tool according to claim 8, wherein: S equals 4, and the S processing chambers are arranged in a 2×2 array. The first and second electrostatic electrodes in adjacent cells of the S processing chambers are rotated 90° relative to each other.

17. The substrate processing tool according to claim 8, wherein N=2.

18. A method for holding a substrate in a substrate processing system, comprising: An electrostatic chuck (ESC) is provided, comprising a base plate, a top plate, and a bonding layer disposed between the base plate and the top plate, wherein the top plate includes a first electrostatic electrode and a second electrostatic electrode embedded therein; During one of the N portions of the substrate processing, the substrate is clamped by supplying a first polarity to the first electrostatic electrode of the ESC and a second polarity to the second electrostatic electrode of the ESC, where N is an integer greater than 1. as well as During another of the N portions of the processing of the substrate, the second polarity is supplied to the first electrostatic electrode of the ESC and the first polarity is supplied to the second electrostatic electrode of the ESC to clamp the substrate.

19. The method of claim 18, wherein the processing includes deposition.

20. The method of claim 18, wherein the first electrostatic electrode and the second electrostatic electrode have a semi-circular shape.

21. The method of claim 18, further comprising: The plasma is ignited during one of the N portions of the process; The plasma is extinguished between one of the N portions of the process and the other of the N portions; as well as The plasma is re-ignited during one of the N parts of the process.

22. The method of claim 21, further comprising releasing the clamp on the substrate after extinguishing the plasma.

23. The method of claim 22, further comprising clamping the substrate prior to igniting the plasma during the other of the N portions of the process.

24. The method of claim 18, wherein N=2.

25. A method for holding a substrate in a substrate processing tool, comprising: S processing chambers are provided, each containing S ESCs, where S is an integer greater than 1; wherein each of the S ESCs includes a base plate, a top plate, and a bonding layer disposed between the base plate and the top plate, and wherein the top plate of the S ESCs includes a first electrostatic electrode and a second electrostatic electrode. During one of the N portions of the S processing of the S substrates in the S processing chambers, the S substrates in the S processing chambers are clamped by supplying a first polarity to the first electrostatic electrode of the S ESCs and a second polarity to the second electrostatic electrode of the S ESCs, respectively, where N is an integer greater than 1. as well as During another of the N portions of the S processes on the S substrates, the S substrates in the S processing chambers are clamped by supplying the second polarity to the first electrostatic electrode of the S ESCs and the first polarity to the second electrostatic electrode of the S ESCs, respectively.

26. The method of claim 25, wherein the S processes comprise deposition.

27. The method of claim 26, further comprising: During one of the N portions of the S processes in the S processing chambers, plasma is ignited using S plasma generators; The plasma in the S processing chambers is extinguished between one of the N sections and the other of the N sections; as well as The plasma is ignited in the S processing chambers during the other of the N parts of the S processes.

28. The method of claim 27, further comprising releasing the clamping of the S substrates after extinguishing the plasma.

29. The method of claim 28, further comprising clamping the S substrates prior to igniting the plasma during the other of the N portions of the S processes.

30. The method of claim 26, wherein the first electrostatic electrode and the second electrostatic electrode in each of the S processing chambers are energized in a balanced configuration.

31. The method of claim 26, wherein S equals 4, and further comprising: The S processing chambers are arranged in a 2×2 array, and The first electrostatic electrode and the second electrostatic electrode in each of the S processing chambers are energized in a balanced configuration.

32. The method of claim 26, wherein S equals 4, and further comprising: The S processing chambers are arranged in a 2×2 array, and The first electrostatic electrode and the second electrostatic electrode in each of the S processing chambers are energized by opposing electrodes of opposite polarity in adjacent chambers of the S processing chambers.

33. The method of claim 26, wherein S equals 4, and further comprising: The S processing chambers are arranged in a 2×2 array, and The first electrostatic electrode and the second electrostatic electrode in adjacent cells of the S processing chambers are rotated 90° relative to each other.

34. The method of claim 26, wherein N=2.

Images