Adjustability of extreme edge shell with non-moving edge ring

Abstract

The detailed description set forth herein generally relates to a substrate processing apparatus. In one detailed description, a processing kit for a substrate processing chamber is disclosed. The processing kit includes an edge ring configured to surround a substrate in the semiconductor processing chamber, at least one electrically conductive pin electrically coupled with the edge ring, a sliding ring located below the edge ring and including at least one insertion hole for receiving the at least one electrically conductive body, and an actuator movable relative to the at least one electrically conductive pin in a direction that changes an amount of capacitive coupling between the at least one electrically conductive pin and the sliding ring.

Description

background Technical Field

[0001] The embodiments described herein generally relate to a substrate processing apparatus, and more specifically, to an improved apparatus for controlling the plasma edge profile of a processed substrate. Background Technology

[0002] As semiconductor technology nodes advance and device geometries shrink, the uniformity requirements for critical dimensions at substrate edges become more stringent, impacting die yield. Commercial plasma reactors include multiple adjustable knobs for controlling the process uniformity across the entire substrate, such as temperature control, gas flow rate, and direct current (DC) power. Typically, in etching processes, the silicon substrate is etched while being electrostatically attached to an electrostatic chuck.

[0003] During processing, a substrate placed on a substrate support may undergo processes involving material deposition and partial material removal or etching. These processes are typically performed continuously or alternately. Generally, uniform deposition and etching rates on the substrate surface are beneficial. However, process inhomogeneities are often present across the entire substrate surface, which can be particularly pronounced at or near the substrate edges. These peripheral inhomogeneities may be attributed to electric field terminating effects, sometimes referred to as edge effects. Previous methods for compensating for edge effects have involved placing a deposition ring around the substrate and moving the deposition ring relative to the substrate body to influence the plasma shell at the substrate edges. For example, the deposition ring can be raised relative to the substrate to bend the plasma shell, causing ions to focus towards or away from the edges. One problem with movable deposition rings is particle generation. Particles from movable deposition rings can alter the chemistry of the processing and / or cause undesirable contamination within the processing chamber.

[0004] Therefore, there is a constant need for improved substrate processing equipment. Summary of the Invention

[0005] The specific embodiments described herein generally relate to a substrate processing apparatus, a processing kit, and a method of use.

[0006] In one example, a processing sleeve for a substrate processing chamber is disclosed herein. The processing sleeve includes an edge ring configured to surround a substrate in a semiconductor processing chamber; at least one conductive pin electrically coupled to the edge ring; a sliding ring located below the edge ring and including at least one insertion hole for receiving at least one conductor; and an actuator capable of moving the sliding ring relative to the at least one conductive pin in a direction that changes the amount of capacitive coupling between the at least one conductive pin and the sliding ring.

[0007] In another example, this document discloses a processing sleeve for a substrate processing chamber. The processing sleeve includes an edge ring configured to surround a substrate in a semiconductor processing chamber; a sliding ring located below the edge ring and electromechanically coupled to the edge ring via at least one coupling member; and an actuator capable of moving the sliding ring in a direction that changes the amount of capacitive coupling between the sliding ring and a base plate supporting the substrate.

[0008] In another example, this document discloses a method for processing a substrate. The method includes positioning the substrate on a substrate support disposed in a substrate processing chamber, the substrate being surrounded by an edge ring, forming plasma above the substrate, and controlling the plasma shell near the substrate edge by tuning the voltage on the edge ring by moving a sliding ring in the direction of changing the capacitive coupling between the edge ring and the cathode of the power supply. Attached Figure Description

[0009] To gain a detailed understanding of the features described above, reference can be made to specific embodiments for a more detailed description. The specific embodiments have been briefly summarized above, and some embodiments are illustrated in the accompanying drawings. However, it should be noted that the drawings only illustrate typical embodiments of the present disclosure and should not be considered as limiting its scope, as other equally effective embodiments are permissible with respect to the present disclosure.

[0010] Figure 1A A cross-sectional view of a processing chamber according to a specific embodiment of the present disclosure is shown.

[0011] Figure 1B One specific embodiment according to this disclosure is shown. Figure 1A An enlarged regional cross-sectional view of a portion of the processing chamber.

[0012] Figure 1C A voltage waveform established on a substrate due to a voltage waveform applied to the electrodes of the processing chamber, according to a specific embodiment of the present disclosure, is shown.

[0013] Figure 2A-2C yes Figure 1A A simplified cross-sectional view of a portion of the processing chamber illustrates a capacitive coupling configuration between the sliding ring and the edge ring according to some specific embodiments of the present disclosure.

[0014] Figure 3 One specific embodiment according to this disclosure is shown. Figure 2A A simplified diagram of the sliding ring and edge ring in the diagram.

[0015] Figure 4A A conductive pin is shown in a sliding ring and an edge ring according to a specific embodiment of the present disclosure. Figure 3 Cross-sectional view on plane AA.

[0016] Figure 4B One specific embodiment according to this disclosure is shown. Figure 4A Another cross-sectional view of the sliding ring and conductive pin shown.

[0017] Figure 4C One specific embodiment according to this disclosure is shown. Figure 4A Another cross-sectional view of the sliding ring and conductive pin shown.

[0018] Figure 5A One specific embodiment according to this disclosure is shown. Figure 2A-2C A portion of the sliding ring shown.

[0019] Figure 5B One specific embodiment according to this disclosure is shown. Figure 5A The enlarged portion of the sliding ring shown.

[0020] Figures 6A-6C yes Figure 1A A simplified cross-sectional view of a portion of the processing chamber illustrates a capacitive coupling configuration between a substrate support and a sliding ring according to a specific embodiment of this disclosure.

[0021] Figure 7 This is a specific implementation based on the content of this disclosure. Figure 6A A simplified schematic diagram of the sliding ring, substrate support, and edge ring in the diagram.

[0022] Figure 8A A sliding ring and a base plate support according to a specific embodiment of the present disclosure are shown. Figure 7 Cross-sectional view on plane AA.

[0023] Figure 8B One specific embodiment according to this disclosure is shown. Figure 4A Another cross-sectional view of the sliding ring and base plate support shown.

[0024] Figure 8C One specific embodiment according to this disclosure is shown. Figure 4A Another cross-sectional view of the sliding ring and base plate support shown.

[0025] Figure 9A One specific embodiment according to this disclosure is shown. Figure 7 The enlarged cross-sectional view of the sliding ring is shown.

[0026] Figure 9B One specific embodiment according to this disclosure is shown. Figure 7The enlarged cross-sectional view of the sliding ring is shown.

[0027] Figure 10 This is a specific implementation based on the content of this disclosure. Figure 6A A simplified schematic diagram of the sliding ring, substrate support, and edge ring in the diagram.

[0028] Figure 11A A sliding ring and a base plate support according to a specific embodiment of the present disclosure are shown. Figure 10 Cross-sectional view on plane AA.

[0029] Figure 11B One specific embodiment according to this disclosure is shown. Figure 11A Another cross-sectional view of the sliding ring and base plate support shown.

[0030] Figure 11C One specific embodiment according to this disclosure is shown. Figure 11A Another cross-sectional view of the sliding ring and base plate support shown.

[0031] Figure 12A This is a specific implementation based on the content of this disclosure. Figures 6A-6C A schematic diagram of the coupling component shown.

[0032] Figure 12B One specific embodiment according to this disclosure is shown. Figure 12A The diagram shows the electromechanical coupling of the coupling component with the sliding ring and the edge ring.

[0033] Figure 12C This illustrates the positioning in accordance with a specific embodiment of the present disclosure. Figure 12B Top plan view of the coupling component on the top surface of the sliding ring shown.

[0034] Figure 13 A flowchart illustrating a method for processing a substrate according to a specific embodiment of the present disclosure is shown.

[0035] For clarity, the same reference numerals are used where applicable to identify common elements across the figures. Furthermore, elements of one embodiment may be advantageously adapted for use in other embodiments described herein. Detailed Implementation

[0036] Specific embodiments of this disclosure generally include methods and apparatus for improving the uniformity of etching rate across the entire substrate surface by controlling the shape of a plasma shell formed on a substrate (such as a semiconductor wafer) during plasma processing. Specific embodiments of this disclosure will include adjusting one or more plasma processing variables and / or adjusting the configuration of processing kit hardware proximate to and / or supporting the substrate during processing. Therefore, the uniformity of the plasma shell on the wafer surface can be controlled, thereby improving wafer processing yield.

[0037] More specifically, according to one embodiment of this disclosure, the processing assembly includes a non-movable edge ring and a sliding ring, the sliding ring being capacitively coupled to one or more conductive pins protruding from the bottom surface of the edge ring. The sliding ring is electrically coupled to the cathode of a power source (e.g., a single-output DC pulsed voltage source). The processing assembly is configured to displace the sliding ring (e.g., raise or lower) to change the amount of overlap between the energized sliding ring and the conductive pins electrically connected to the edge ring. The amount of capacitive coupling between the energized sliding ring and the conductive pins is proportional to the amount of overlap between the two components and can be used to adjust or regulate the voltage on the edge ring. Therefore, extreme edge shell control can be achieved by controlling the amount of capacitive coupling between the energized sliding ring and the conductive pins, without requiring physical movement of the edge ring.

[0038] According to another specific embodiment of this disclosure, the processing assembly includes a non-movable edge ring and a sliding ring, the sliding ring being electromechanically connected to the edge ring via a conductive coupling member. The sliding ring is capacitively coupled to a base plate (or substrate support) in the processing chamber, wherein the base plate is electrically coupled to the cathode of a power source (e.g., a single-output DC pulsed voltage source). The processing assembly is configured to displace the sliding ring (e.g., raise or lower) to change the amount of overlap between the energized base plate and the sliding ring electrically connected to the edge ring. The amount of capacitive coupling between the energized base plate and the sliding ring is proportional to the amount of overlap between the two components and can be used to regulate or adjust the voltage on the edge ring. Therefore, extreme edge shell control can be achieved by controlling the amount of capacitive coupling between the energized base plate and the sliding ring, without requiring physical movement of the edge ring.

[0039] Figure 1A This is a cross-sectional view of a processing chamber 100 according to a specific embodiment. As shown, the processing chamber 100 is an etching chamber suitable for etching a substrate (e.g., substrate 101). An example of a processing chamber that can be adapted to benefit from this disclosure is SYM3. ® The processing chamber is available from Applied Materials, Inc., located in Santa Clara, California, USA. It is conceivable that other processing chambers, including deposition chambers and processing chambers from other manufacturers, may also benefit from this disclosure, subject to modification.

[0040] The processing chamber 100 can be used for various plasma processing processes. In one embodiment, the processing chamber 100 can be used for a dry etching process using one or more etchants. In one embodiment, plasma is formed in the processing chamber by a process gas, such as C. x F y (where x and y can be different allowed combinations), O2, NF3, or combinations thereof.

[0041] The processing chamber 100 has a chamber body 113 and a system controller 126. The chamber body 113 includes a cover assembly 176, one or more sidewalls 122, and a chamber base 124, which, together with the chamber cover 123 of the cover assembly 176, define a processing space 129. A substrate support assembly 180 is disposed in the processing space 129.

[0042] Cover assembly 176 includes chamber cover 123 and one or more plasma source assemblies, such as two inductively coupled plasma (ICP) assemblies 196, 197. Each ICP assembly 196, 197 includes coils 181, 182, respectively, configured to inductively couple a radio frequency (RF) waveform generated by radio frequency generator 118 with plasma 103 formed in the processing space 129 of processing chamber 100 during plasma processing. In this configuration, chamber cover 123 includes a dielectric material configured to allow the field generated by coils 181, 182 during the generation of asymmetric voltage waveforms by radio frequency generator 118 to help generate and sustain plasma 103 in processing space 129.

[0043] One or more sidewalls 122 and chamber base 124 generally comprise materials of appropriate size and shape to form structural support for the elements of the processing chamber 100, and these materials are configured to withstand the pressures and additive energy applied to them during processing, when plasma 103 occurs in the vacuum environment maintained within the processing space 129 of the processing chamber 100. In one example, one or more sidewalls 122 and chamber base 124 are formed of metal, such as aluminum, aluminum alloy, or stainless steel alloy.

[0044] Gas inlet 128 passes through chamber cover 123. Gas inlet 128 is used to deliver one or more process gases from process gas source 119 in fluid communication with it to process space 129. Substrate 101 is inserted into and removed from process space 129 through one or more openings (not shown) in sidewall 122, and the openings are sealed with slit valves (not shown) during plasma treatment of substrate 101.

[0045] Vacuum system 120 is coupled to vacuum port 121. Vacuum system 120 may include a vacuum pump and a throttle valve (not shown). The throttle valve regulates the airflow through processing chamber 100. The vacuum pump is coupled to vacuum port 121 located in internal space 108 to evacuate gas from processing chamber 100 through vacuum port.

[0046] A substrate support assembly 180 is disposed in the processing space 129 for supporting the substrate 101 for processing. The substrate support assembly 180 is coupled to a lifting mechanism (not shown) via a shaft 138 extending through a chamber base 124 of the chamber body 113. The lifting mechanism is flexibly sealed to the chamber body 113 via a bellows to prevent vacuum leakage around the shaft 138. The lifting mechanism allows the substrate support assembly 180 to move vertically between a lower transport section within the chamber body 113 and several raised processing chamber positions.

[0047] One or more lifting rods (not shown) may be arranged through the substrate support assembly 180. Three or more lifting rods are configured to extend through the substrate support assembly 180, thereby allowing the substrate 101 to rise from the substrate support surface 105A of the substrate support assembly 180. The three or more lifting rods may be activated by a lifting ring (not shown) coupled to a lifting ring actuator (not shown), the actuator being configured to raise and lower the lifting ring and the three or more lifting rods relative to the substrate support surface 105A.

[0048] The substrate support assembly 180 includes a substrate support 202 (e.g., an electrostatic chuck (ESC) substrate support or base plate) and one or more lower electrodes coupled to a plasma source, such as a capacitively coupled plasma (CCP) assembly. In some embodiments, the substrate support 202 is formed of a dielectric material, such as a bulk sintered ceramic material, such as a corrosion-resistant metal oxide or metal nitride material, such as alumina (Al2O3), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttrium oxide (Y2O3), mixtures thereof, or combinations thereof. In some embodiments, the substrate support 202 further includes a bias electrode 104 embedded in its dielectric material.

[0049] The substrate support assembly 180 also includes a cooling plate 204, a base 206, and a ground plane 112. The base 206 is located between the cooling plate 204 and the ground plane 112. The ground plane 112 is located between the base 206 and the chamber base 124. The substrate support 202 is thermally coupled to and disposed on the cooling plate 204. In some embodiments, the cooling plate 204 is configured to regulate the temperature of the substrate support 202 and the substrate 101 disposed on the substrate support 202 during substrate processing. In some embodiments, the cooling plate 204 may include a plurality of cooling channels (not shown) for circulating coolant therein. The cooling plate 204 may be coupled to or bonded to the substrate support 202 via an adhesive or any suitable mechanism.

[0050] The substrate support assembly 180 also includes a processing sleeve 200 supported on the substrate support assembly 180. The processing sleeve 200 includes an edge ring 210 and a sliding ring 150. The processing sleeve 200 may additionally include a support ring 214 (e.g., Figure 1B (as shown) and outer ring 274 (as shown) Figure 1B (As shown). A support ring 214 may interface with an edge ring 210 and support the edge ring 210 on its top surface. A sliding ring 150 may move vertically up and down relative to the edge ring 210, while the edge ring 210 remains stationary. An actuation assembly 151 is coupled to and positioned below the sliding ring 150. The actuation assembly 151 may include three or more pins coupled to linear actuators, such that the pins contact the bottom surface of the sliding ring 150 to move the sliding ring 150 up and down. In one example, the actuation assembly 151 includes three or more actuators that work together to cause the sliding ring 150 to rise and fall along the z-axis.

[0051] Go to Figure 1B , Figure 1B An embodiment is shown. Figure 1AAn enlarged regional cross-sectional view of a portion of the processing chamber 100. The processing chamber 100 may include a bias assembly 299, which may include one or more plasma source assemblies, each adapted to deliver an asymmetric voltage waveform to one or more electrodes and / or one or more coils disposed within the processing chamber 100. One or more lower electrodes may include a bias electrode 104 and / or an edge electrode 115, which are disposed within the processing sleeve 200 and coupled to one or more plasma source assemblies, such as a waveform generation assembly. For example, a waveform generation assembly 208 may be coupled to the bias electrode 104 via a transmission line 157. In some embodiments, the waveform generation assembly 208 is electrically coupled to the edge electrode 115 via a conductive tube 167, the edge electrode 115 including a sliding ring 150. The waveform generation assembly 208 is configured to deliver a pulsed voltage (PV) waveform generated by a PV waveform generator (e.g., PV waveform generator 208A) to the plasma 103 formed in the processing space 129 of the processing chamber 100 during plasmaification processing.

[0052] In one embodiment, the PV waveform generator 208A of the waveform generation assembly 208 is configured to simultaneously bias the bias electrode 104 and the edge electrode 115. When the PV waveform generator 208A is configured to bias the bias electrode 104 and the edge electrode 115, the edge electrode 115 is capacitively coupled to the edge ring 210 through one or more conductive pins.

[0053] In another specific embodiment, the photovoltaic waveform generator 208A of the waveform generating assembly 208 is configured to bias the bias electrode 104 but not the edge electrode 115. The edge electrode 115 is electromechanically coupled to the edge ring 210 through one or more conductive coupling components (e.g., a strip, a flat spring, etc.) and capacitively coupled to the bias electrode 104 in the substrate support 202 when the bias electrode 104 is biased by the PV waveform generator 208A.

[0054] In some embodiments, the PV waveform generator 208A is configured to deliver multiple asymmetric pulsed voltage waveforms to one or more electrodes within a plasma processing chamber to control and maintain plasma formed in the processing region and / or control the formation of a plasma shell on the substrate surface during processing. The plasma processing method and apparatus described herein are configured to improve control over various characteristics of the generated plasma and to control the ion energy distribution (IED) generated by the plasma interacting with one or more regions of the substrate surface during plasma processing. During the voltage waveform pulses provided in each pulsed voltage waveform applied to the electrodes, waveform characteristics such as frequency, waveform shape, and applied voltage on-time can be synchronously controlled, thereby improving control over the generated plasma. Therefore, higher precision in plasma processing can be achieved, which will be described in more detail herein.

[0055] Figure 1C Two separate voltage waveforms are shown at the substrate 101 disposed on the substrate support surface 105A of the substrate support assembly 180 of the processing chamber 100 due to the delivery of a PV waveform to the bias electrode 104 of the processing chamber 100. The first waveform (e.g., waveform 225) is an example of an uncompensated PV waveform established on the substrate 101 during plasma processing. The second waveform (e.g., waveform 227) is an example of a compensated PV waveform established on the substrate 101 during the "ion current phase" portion of the PV waveform cycle by applying a negative slope waveform to the bias electrode 104 of the processing chamber 100 using a current source (not shown). The compensated PV waveform can also be established by applying a negative voltage ramp during the ion current phase of the PV waveform generated by the PV waveform generator 208A.

[0056] Waveforms 225 and 227 comprise two main phases: an ion current phase and a shell collapse phase. During plasma processing, the two portions of waveforms 225 and 227 (e.g., the ion current phase and the shell collapse phase) can be established alternately and / or separately on substrate 101. At the beginning of the ion current phase, a voltage drop is generated at substrate 101 due to the delivery of the negative portion of the photovoltaic waveform (e.g., the ion current portion) supplied by the photovoltaic waveform generator 208A to the bias electrode 104, thereby forming a high-voltage shell over substrate 101. The high-voltage shell allows positive ions from the plasma generator to be accelerated toward the biased substrate 101 during the ion current phase; therefore, for RIE processes, the amount and characteristics of the etching process occurring on the surface of substrate 101 during plasma processing can be controlled. In some specific embodiments, the ion current phase preferably includes a region of the PV waveform to achieve voltage stability or minimal variation at substrate 101 throughout the phase, such as... Figure 1CWaveform 227 is shown in the figure. One will notice that the significant change in voltage established at substrate 101 during the ion current phase, as shown by the positive slope in waveform 225, will undesirably lead to a change in ion energy distribution (IED), resulting in undesirable properties of the etch features formed in substrate 101 during the RIE process.

[0057] Back Figure 1A and 1B In one configuration, the bias electrode 104 serves as an adsorption electrode to hold (i.e., adsorb) the substrate 101 onto the substrate support surface 105A of the substrate support 202, and also biases the substrate 101 relative to the plasma 103 using one or more voltage waveform bias schemes described herein. In some embodiments, the bias electrode 104 is formed of one or more conductive components, such as one or more metal meshes, foils, plates, or combinations thereof.

[0058] The bias assembly 299 may also include a clamping network 209 for applying a high-voltage bias to the bias electrode 104 and / or the edge electrode 115. In some embodiments, the bias electrode 104 is electrically coupled to the clamping network 209, and the edge electrode 115 is electrically coupled to a separate clamping network (not shown). The clamping network provides an adsorption voltage to the bias electrode 104 and / or the edge electrode 115 using a high-voltage DC power supply, for example, a quiescent DC voltage between approximately -5000V and approximately +5000V.

[0059] In some embodiments, the edge electrode 115 is located below the edge of the substrate and maintains a certain distance from the center of the bias electrode 104. For a processing chamber 100 configured to process a ring substrate, the edge electrode 115 is annular and made of a conductive material. A sliding ring 150 is disposed below the edge ring 210 and movably surrounds at least a portion of the bias electrode 104 in the substrate support 202 when viewed along the normal direction of the substrate support surface 105A.

[0060] In some specific implementations, for example, Figure 2A-2CAs shown in Figures 3 and 4A-4C, the edge electrode 115 includes a sliding ring 150 having one or more insertion holes, each receiving a dielectric insert. Each dielectric insert includes a gap through-hole to allow a conductive pin extending from the bottom surface of the edge ring 210 to extend into the dielectric insert without contact. The sliding ring 150 is configured to move vertically up and down to change the amount of overlap with the conductive pin, for example, from zero to 100%, while the edge ring 210 remains stationary. Thus, when the edge electrode 115 is biased by a power supply, the conductive pin can be capacitively coupled to the edge electrode 115. By moving the sliding ring 150 up and down along the z-axis, the amount of capacitive coupling between the conductive pin and the edge electrode 115 can be adjusted, thereby adjusting the voltage on the edge ring 210 to control the shell around the edge of the substrate 101 without physically moving the edge ring 210.

[0061] In some specific implementations, for example, Figures 6A-6C As shown in Figures 7, 8A-8C, 9A-9B, 10, and 11A-11C, the edge electrode 115 includes a sliding ring 150 having one or more conductive coupling elements (e.g., arc segments, strips, flat springs, etc.) electromechanically coupled to the edge ring 210. The sliding ring 150 is configured to move vertically up and down to control the amount of overlap with the substrate support 202, while the substrate support 202 remains stationary. Therefore, when the bias electrode 104 is biased by a power supply, the edge electrode 115 can be capacitively coupled to the bias electrode 104 in the substrate support 202. By moving the sliding ring 150 up and down along the z-axis, the amount of capacitive coupling between the bias electrode 104 and the edge electrode 115 can be adjusted, thereby adjusting the voltage on the edge ring 210 to control the capacitive shell around the edge of the substrate 101 without physically moving the edge ring 210.

[0062] During operation, the PV waveform generator 208A is configured to provide a PV waveform to the adsorption electrode mesh (e.g., bias electrode 104) on the substrate support 202. In some embodiments, the processing chamber 100 may include a bias assembly 299 configured to provide improved PV waveform delivery to electrodes (e.g., bias electrode 104 and / or sliding ring 150) arranged at least within the processing sleeve 200. In some configurations, the bias assembly 299 is provided to overcome the weak DC coupling to the electrodes in the plasma processing system.

[0063] In some embodiments of the bias assembly 299, in order to provide a photovoltaic waveform to the edge electrode 115, the photovoltaic waveform generator 208A is electrically coupled to the cooling plate 204 through a conductive tube 167, and the conductive tube 167 is electrically coupled to the output of the photovoltaic waveform generator 208A. Generally, the PV waveform generator 208A is a voltage waveform generating power supply used to control the shell formation on the substrate surface during plasma processing.

[0064] In some specific embodiments, during processing, the PV waveform generator 208A of the bias assembly 299 simultaneously sends a voltage waveform (e.g., a pulse voltage waveform) to the bias electrode 104 in the substrate support 202 and the cooling plate 204. The cooling plate 204 is connected via a power coupling mechanism 500 (e.g., Figure 1B (Illustrated schematically) It has electromechanical coupling, the electromechanical coupling mechanism being configured to provide a voltage waveform to an edge electrode 115, which may include a sliding ring 150. The power coupling mechanism 500 may include a conductive cable, wire, strip, or other flexible element configured to transmit the generated voltage waveform from the photovoltaic waveform generator 208A to the components within the edge electrode 115.

[0065] In one embodiment, the power coupling mechanism 500 includes a first end 150B coupled to a conductive tube 167 through a portion of the cooling plate 204, a second end 150C coupled to a portion of the edge electrode 115 (e.g., a sliding ring 150), and a central portion disposed within a channel (not shown) formed within the cooling plate 204 and / or the base 206. In another embodiment, the power coupling mechanism 500 includes a first end 150B coupled to a conductive tube 167 through a portion of the base 206, a second end 150C coupled to a portion of the edge electrode 115 (e.g., a sliding ring 150), and a central portion disposed within a channel (not shown) formed within the cooling plate 204 and / or the base 206. The channel and central portion of the power coupling mechanism 500 are configured to allow the power coupling mechanism 500 to pass through the sliding ring 150 using an actuator assembly 151 (e.g., ...). Figure 1A As shown, the power coupling mechanism 500 moves (e.g., bends, translates, etc.) when it is displaced relative to the substrate support surface 105A. In another specific embodiment, the power coupling mechanism 500 includes a first end 150B directly coupled to the conductive tube 167, a second end 150C coupled to a portion of the edge electrode 115 (e.g., the sliding ring 150), and a central portion disposed in a channel (not shown) formed within the cooling plate 204 and / or the base 206. The channel and the central portion of the power coupling mechanism 500 are configured such that when the sliding ring 150 passes through the actuator assembly 151 (e.g., ... Figure 1A As shown, when the power coupling mechanism 500 is displaced relative to the substrate support surface 105A, it is allowed to move (e.g., bend, translate, etc.).

[0066] like Figure 1B As shown in the schematic diagram, the clamping network 209 can be coupled to the bias electrode 104 via the transmission line 157, and to the edge electrode 115 via the power coupling mechanism 500, a part of the cooling plate 204 or a part of the base 206 and the conductive tube 167.

[0067] In one embodiment, edge electrode 115 (with sliding ring 150) is electromechanically coupled to photovoltaic waveform generator 208A via power coupling mechanism 500, which may include conductive cables, wires, strips, or other flexible elements configured to transmit a generated voltage waveform from photovoltaic waveform generator 208A to sliding ring 150. Since sliding ring 150 can be capacitively coupled to edge ring 210 via conductive pin 292 (e.g., ... Figure 2A-2C As shown, the voltage on the edge ring 210 can be adjusted by moving the sliding ring 150 relative to the conductive pin 292 along the z-axis, thereby controlling the amount of capacitive coupling (e.g., capacitance) between the two components. In another embodiment, when the bias electrode 104 receives the voltage waveform generated by the photovoltaic waveform generator 208A, the bias electrode 104 in the substrate support 202 is capacitively coupled to the edge electrode 115 having the sliding ring 150 (and physically separated from the edge electrode 115). Since the edge ring 210 is electrically connected to the sliding ring 150, and the sliding ring 150 is capacitively coupled to the bias electrode 104 in the substrate support 202, the voltage on the edge ring 210 can be adjusted by moving the sliding ring 150 relative to the substrate support 202 along the z-axis, thereby controlling the amount of capacitive coupling (e.g., capacitance) between the two components.

[0068] like Figure 1AAs shown, system controller 126 (also referred to herein as a processing chamber controller) is used to control the operation of processing chamber 100. For example, system controller 126 may control the operation of bias assembly 299. System controller 126 includes a central processing unit (CPU) 133, memory 134, and support circuitry 135. System controller 126 is used to control the processing sequence for processing substrate 101, including the substrate biasing method described herein. CPU 133 is a general-purpose computer processor configured for industrial environments to control the processing chamber and associated subprocessors. Memory 134, as described herein, is typically non-volatile memory and may include random access memory, read-only memory, floppy disk or hard disk drive, or other suitable forms of local or remote digital storage. Support circuitry 135 is conventionally coupled to CPU 133 and includes cache, clock circuitry, input / output subsystems, power supply, and combinations thereof. Software instructions (programs) and data may be encoded and stored in memory 134 to instruct processors within CPU 133. The CPU 133-readable software program (or computer instructions) in system controller 126 determines which tasks the components in processing chamber 100 can perform. Typically, the CPU 133-readable software program in system controller 126 includes program code that, when executed by a processor (e.g., CPU 133), performs tasks related to the plasma processing method described herein. The program may include instructions for controlling various hardware and electrical components within processing chamber 100 to perform various processing tasks and sequences for implementing the method described herein.

[0069] Figure 2A , 2B and 2C showcase Figure 1A A simplified cross-sectional view of a portion of the processing chamber illustrates, according to one specific embodiment, a capacitive coupling configuration between the sliding ring 150 and the conductive pin 292 for adjusting the voltage on the edge ring 210.

[0070] As described above, the substrate support assembly 180 includes a substrate support 202, a cooling plate 204, and a base 206 (e.g., ...). Figure 1A (As shown). A cooling plate 204 is disposed on a base 206. The cooling plate 204 may include multiple cooling channels (not shown) for circulating coolant therein. The cooling plate 204 may be bonded to the substrate support 202 by adhesive or any suitable mechanism. The substrate support 202 may include one or more heaters (not shown). The one or more heaters may be independently controlled. The one or more heaters enable the substrate support 202 to heat the substrate 101 from the bottom surface of the substrate 101 to a desired temperature. The substrate support 202 may also include one or more bias electrodes (such as...) embedded therein. Figure 1A (As shown).

[0071] like Figure 2AAs shown, the processing sleeve 200 is supported on the substrate support assembly 180 and includes an edge ring 210, a support ring 214, and a sliding ring 150. The support ring 214 and the edge ring 210 are interfaced with each other. The support ring 214 includes a top surface 218, a bottom surface 220, an inner edge 222, and an outer edge 224. The top surface 218 is substantially parallel to the bottom surface 220. The inner edge 222 is substantially parallel to the outer edge 224 and substantially perpendicular to the bottom surface 220. In some embodiments, the support ring 214 also includes a stepped surface 226. In the illustrated embodiment, the stepped surface 226 is formed in the outer edge 224 and is substantially parallel to the bottom surface 220. The stepped surface 226 defines a groove for receiving the edge ring 210. Generally, the height of the support ring 214 is limited by the height of the substrate support 202. For example, the inner edge 222 of the support ring 214 does not extend above the height of the substrate support 202. Therefore, the support ring 214 protects one side of the substrate support 202. In some embodiments, when the substrate 101 is positioned on the substrate support surface 105A of the substrate support 202, it extends partially above the support ring 214.

[0072] like Figure 2A As shown, the edge ring 210 has a ring body 216, which includes a top surface 228, a bottom surface 230, an inner edge 232, and an outer edge 234. The top surface 228 is substantially parallel to the bottom surface 230. The inner edge 232 is substantially parallel to the outer edge 234 and substantially perpendicular to the bottom surface 230. In one embodiment, the edge ring 210 interfaces with the support ring 214 through the bottom surface 230. For example, the bottom surface 230 of the edge ring 210 interfaces with the stepped surface 226 in the support ring 214. In another embodiment, the edge ring 210 may further include a stepped surface (not shown) formed in the inner edge 232, such that the stepped surface interfaces with the stepped surface 226 of the support ring 214. When interfaces with the support ring 214, the inner edge 232 of the edge ring 210 is spaced apart from the substrate 101.

[0073] In one embodiment, when the interface is connected, the edge ring 210 and the support ring 214 form a continuous bottom surface. In another embodiment, when the interface is connected, the support ring 214 and the edge ring 210 do not form a continuous bottom surface. Instead, in some embodiments, the top surface 218 of the support ring 214 may be higher than the top surface 228 of the edge ring 210. In other embodiments, the bottom surface 230 of the edge ring 210 may be located below the bottom surface 220 of the support ring 214. Therefore, in some embodiments, the support ring 214 and the edge ring 210 do not form a continuous top or bottom surface.

[0074] In one embodiment, the edge ring 210 includes one or more conductive pins 292 extending from the bottom surface 230 of the edge ring 210. In one embodiment, the edge ring 210 and / or the conductive pins 292 may be formed of silicon carbide (SiC). In other examples, the edge ring 210 and / or the conductive pins 292 may be formed of other suitable conductive materials.

[0075] like Figure 2A As shown, the sliding ring 150 may include a sliding electrode 152 having a conductive material, such as a metal that may include aluminum, stainless steel, copper, nickel, or other suitable conductive materials. The sliding ring 150 has one or more insertion holes 154 extending from the top surface 254 of the sliding ring 150 to the bottom surface 256. In some embodiments, each insertion hole 154 includes an inner sidewall 158 that tapers toward the bottom surface 256 for receiving a dielectric insert 156. In some embodiments, each dielectric insert 156 has an inverted conical shape adapted to the tapered inner sidewall 158 of the insertion hole 154. In one example, the dielectric insert 156 may be formed by coating the insertion hole 154 with a ceramic material. Each dielectric insert 156 includes a gap through-hole 160 extending through the entire height of the dielectric insert 156 (e.g., along the z-axis), such that when the sliding ring 150 moves up and down along the z-axis, the conductive pin 292 can pass through the gap through-hole 160 without contacting the conductive material in the sliding electrode 152. The tapered inner wall 158 of the insertion hole 154 allows the dielectric insert 156 to have different thicknesses at different depths. Therefore, taking into account the different dielectric thicknesses at different insertion depths, the capacitive coupling between the sliding electrode 152 and the conductive pin 292 can be adjusted with high precision.

[0076] like Figure 2A As shown, the sliding ring 150 is located below the conductive pin 292, wherein the sliding electrode 152 does not overlap with the conductive pin 292 along the z-axis. Therefore, in Figure 2A In this configuration, the conductive pin 292 and the sliding ring 150 are not capacitively coupled. For example... Figure 2B and 2C As shown, the sliding ring 150 is displaced to partially engage and fully engage (or overlap) with the conductive pin 292, respectively. Since the conductive pin 292 overlaps with the sliding ring 150 along the z-axis, the conductive pin 292 is capacitively coupled to the sliding ring 150. In one embodiment, the height of the sliding ring 150 (e.g., along the z-axis) is substantially equal to the height of the conductive pin 292. In another embodiment, the sliding ring 150 may have a height greater than or less than the height of the conductive pin 292. The sliding ring 150 is configured to move toward and away from the edge ring 210 without making physical contact with the edge ring 210 and the conductive pin 292.

[0077] In some embodiments, the power coupling mechanism 500 enables the sliding ring 150 to be biased through a source power supplied by the cooling plate 204 (e.g., a photovoltaic waveform supplied from the photovoltaic waveform generator 208A and / or a DC bias supplied from a DC power supply in the clamping network 209). In some embodiments, the power coupling mechanism 500 enables the sliding ring 150 to be biased from the base 206 (e.g., ...). Figure 1A (As shown) bias. It should be understood that the power coupling mechanism 500 enables the sliding ring 150 to be biased with the cathode (e.g., cooling plate 204 or alternatively described as base 206, or even...). Figure 1B The conductive tube 167 shown is electrically coupled. When the sliding ring 150 is biased by the power supply, the amount of capacitive coupling between the conductive pin 292 and the sliding ring 150 can be controlled by moving the sliding ring 150 along the z-axis, which in turn can adjust the voltage on the edge ring 210.

[0078] like Figure 2A-2C As shown, the lifting rod 260 is operatively coupled to the sliding ring 150 at the bottom surface 258 of the sliding ring 150. For example, the lifting rod 260 may be generated by the actuator assembly 151 (such as...). Figure 1A As shown, actuator assembly 151 may include an actuator assembly driven by a pneumatic actuator or an electric motor. In some embodiments, the lifting rod 260 may be driven by a lifting rod actuation mechanism (not shown) independent of actuator assembly 151. Actuator assembly 151 allows the sliding ring 150 to move and position vertically within processing chamber 100. Actuator assembly 151 may lift the sliding ring 150 to one or more vertical positions, which may be controlled by system controller 126. Figure 2A-2C In the specific embodiment shown, the edge ring 210 remains stationary, while the sliding ring 150 is displaced by the actuator assembly 151, moving up and down along the z-axis.

[0079] In another example, the sliding ring 150 can be moved manually without the use of the lifting lever 260. The sliding ring 150 may include a cavity (not shown) and an access aperture formed therein. The cavity is formed downward to the bottom of the sliding ring 150. The cavity is used to receive a lead screw (not shown). The lead screw is rotatable, causing the sliding ring 150 to rise or fall relative to the edge ring 210.

[0080] During substrate processing, a voltage bias (e.g., a photovoltaic waveform and / or a bias provided from the clamping network 209) can be supplied to the sliding ring 150 from the cooling plate 204 or the cathode. The amount of power coupled to the sliding ring 150 is improved by a power coupling mechanism 500. The power coupling mechanism 500 prevents power variations during the up-and-down movement of the sliding ring 150 by providing direct contact between energized components (e.g., via electromechanical coupling).

[0081] like Figure 2B As shown, in the case of an etching reactor, plasma interacts with the substrate 101 being etched and the chamber body 113 (e.g., Figure 1A A plasma shell 404 is formed between the plasma chamber 100 (as shown) and each other portion of the processing chamber 100 that comes into contact with the plasma. Ions generated in the plasma are accelerated within the plasma shell and move perpendicular to the boundaries of the formed plasma shell. The plasma shell 404 is a thin region of strong electric field formed by space charge that connects the plasma bulk to its material boundaries. Mathematically, the shell thickness d is represented by the Child-Langmuir equation: Equation (1) in i ε is the ion current density, and ε is the dielectric constant of vacuum. e It is a physical charge. m It is the ion mass, V p Plasma potential, and V DC It is a DC voltage, such as a DC voltage applied to the substrate 101 and / or the edge ring 210.

[0082] By moving the sliding ring 150 relative to the conductive pin 292 along the z-axis, the amount of capacitive coupling between the sliding electrode 152 and the conductive pin 292 can be adjusted, thereby adjusting the voltage on the edge ring 210 and controlling the profile of the plasma shell 404 near the edge 406 of the substrate 101 to compensate for critical dimensional uniformity. In other words, controlling the amount of capacitively coupled plasma between the sliding electrode 152 and the conductive pin 292 (connected to the edge ring 210) affects the voltage on the edge ring 210, and thus affects the thickness d of the plasma shell 404.

[0083] The shell thickness d of the plasma shell 404 can be measured relative to the edge ring 210. For example, in Figure 2B In the specific embodiment shown, the sliding ring 150 is composed of an actuator assembly 151 (such as...) Figure 1A (As shown) it rises along the z-axis to partially engage with the conductive pin 292. The overlap z1 between the sliding electrode 152 of the sliding ring 150 and the conductive pin 292 results in capacitive coupling between the sliding electrode 152 and the conductive pin 292. Figure 2B In this process, due to the overlap of z1 between the sliding electrode 152 and the conductive pin 292, the voltage on the edge ring 210 is adjusted to match the voltage on the substrate 101 (e.g., at V). DC ).like Figure 2B As shown, the plasma shell 404 has a uniform thickness near the edge 406 of the substrate 101. It is noteworthy that... Figure 2B In the middle, the edge ring 210 has an initial thickness t1.

[0084] like Figure 2C As shown, the thickness of the edge ring 210 is from Figure 2B The initial thickness t1 decreases to thickness t2, for example, due to erosion occurring during plasma etching in the processing chamber. When erosion occurs on the edge ring 210, the voltage on the edge ring 210 changes (e.g., decreases). For example, due to erosion, the voltage on the edge ring 210 may be lower than the voltage on the substrate 101 (e.g., lower than V). DC This, in turn, affects the contour of the plasma shell 404 near the edge 406 of the substrate 101.

[0085] To compensate for voltage variations on the edge ring 210 and / or maintain the uniformity of the plasma shell thickness near the edge 406 of the substrate 101, such as Figure 2C As shown, the sliding ring 150 is composed of an actuator assembly 151 (such as...). Figure 1A As shown, the lifting rod 260 rises along the z-axis, causing the conductive pin 292 to be further (e.g., fully) inserted into the gap through-hole 160, thereby fully engaging with the sliding electrode 152. Figure 2B Compared to the capacitive coupling amount z1, the overlap amount z2 between the sliding electrode 152 and the conductive pin 292 results in an increase in capacitive coupling between the two components. This increased capacitive coupling adjusts (e.g., increases) the voltage on the edge ring 210 to match the voltage on the substrate 101 (e.g., at V). DC In other words, raising the sliding ring 150 increases the capacitive coupling between the sliding electrode 152 and the conductive pin 292, so as to maintain the voltage on the edge ring 210 equal to the voltage on the substrate 101 when the thickness of the sliding ring 150 is reduced, for example, due to etching. Figure 2C As shown, the outline of the plasma shell 404 remains consistent near the edge 406 of the substrate 101.

[0086] like Figure 2A-2C As shown, the capacitive coupling configuration can control and adjust the amount of capacitive coupling between the conductive pin 292 and the sliding electrode 152 to adjust the voltage on the edge ring 210, for example, to match it with the voltage on the substrate 101 (e.g., at V). DC ).therefore, Figure 2A-2C The specific embodiment shown enables extremely high edge shell adjustability without physically moving (e.g., raising or lowering) the edge ring 210. In other words, moving the sliding ring 150 relative to the conductive pin 292 of the fixed edge ring 210 affects the profile of the plasma shell 404 near the edge 406 of the substrate 101, thereby controlling the direction of ions accelerated through the shell to the surface of the substrate 101.

[0087] When a constant potential (e.g. V) is applied DCIn the configuration where the bias applied to the sliding ring 150 is pulsed, the shell thickness d is controlled during the ion current phase of each pulse, so that the thickness and shape of the plasma shell 404 remain constant throughout the primary etching portion of the PV waveform.

[0088] As described above, in one embodiment, when the cooling plate 204 is energized, the sliding ring 150 is electrically coupled to the cooling plate 204 via the power coupling mechanism 500. In another embodiment, the sliding ring 150 is electrically coupled to the base 206 via the power coupling mechanism 500. For example, the base 206 or the cooling plate 204 may be configured to provide a bias supply voltage to the sliding ring 150. Since the sliding ring 150 is movable relative to both the base 206 and the cooling plate 204 of the substrate support assembly 180, the power coupling mechanism 500 is configured to provide a direct electroplating connection between the sliding ring 150 and the substrate support assembly 180. Figure 2A-2C As shown, the power coupling mechanism 500 is mechanically fastened to the cooling plate 204. For example, a fastener 205 (such as a bolt) can mechanically fasten the power coupling mechanism 500 to the cooling plate 204. The power coupling mechanism 500 forms a physical electrical connection, and a bias voltage can propagate between the sliding ring 150 and the cathode. In another embodiment, the power coupling mechanism 500 is mechanically fixed to the base 206 using a fastener 205.

[0089] Figure 3 A capacitive coupling configuration described according to a specific embodiment is shown. Figure 2A A simplified schematic diagram of the sliding ring 150 and the edge ring 210. (See attached diagram.) Figure 3 As shown, the edge ring 210 includes a ring body 216 and three conductive pins 292 protruding or extending from its bottom surface. The sliding ring 150 includes three insertion holes 154 for allowing the conductive pins 292 to pass through.

[0090] Figure 4A The sliding ring 150 and one of the conductive pins 292 are shown. Figure 3 A cross-sectional view on plane AA. (See diagram below.) Figure 4A As shown, the sliding ring 150 includes an insertion hole 154 in which a dielectric insert 156 is received. In one example, the dielectric insert 156 is formed by coating the insertion hole 154 with a ceramic material. A gap through-hole 160 is formed at the center of the dielectric insert 156 and extends through the entire height of the dielectric insert 156 (and the entire height of the sliding ring 150). Figure 4A As shown, the sliding ring 150 is located below the conductive pin 292, with no overlap along the z-axis. Therefore, there is no capacitive coupling between the sliding electrode 152 and the conductive pin 292.

[0091] Figure 4B The sliding ring 150 and Figure 4A Another cross-sectional view of the conductive pin 292 shown, according to one embodiment, shows the sliding ring 150 being raised such that the conductive pin 292 is partially inserted into the gap through-hole 160. When the sliding ring 150 is biased by power supply, the conductive pin 292 is capacitively coupled to the sliding electrode 152 (capacitance C1) because the sliding ring 150 and the conductive pin 292 are separated by the dielectric insert 156.

[0092] Figure 4C Showing Figure 4A Another cross-sectional view of the sliding ring 150 and conductive pin 292 shown, wherein, according to one embodiment, the sliding ring 150 protrudes such that the conductive pin 292 is fully inserted into the gap through-hole 160 along the z-axis. When the sliding ring 150 is biased by power supply, the conductive pin 292 is capacitively coupled to the sliding electrode 152 (capacitance C2) because the sliding ring 150 and the conductive pin 292 are separated by the dielectric insert 156. Figure 4C The overlap between the sliding electrode 152 and the conductive pin 292 is greater than Figure 4B The overlap in capacitance is such that capacitor C2 is greater than capacitor C1 (i.e., C2>C1).

[0093] Figure 5A According to a specific embodiment, it is shown that Figure 2A-2C A portion of the sliding ring 150 shown. (As shown) Figure 5A As shown, the dielectric insert 156 includes components with magnetic permeability The ceramic material 152 includes a sliding electrode with magnetic permeability. 2. Conductive materials. For example... Figure 5B As shown, for dx, the thickness of the dielectric insert 156 is d1, and the thickness of the sliding electrode 152 is d2. The dielectric thickness is very small, therefore the field inside it is uniform. In reality, there are two capacitive series capacitors: C1 = Equation (2) for 1A / d1, and C2 = Equation (3) is 2A / d2.

[0094] The total capacitance is: Equation (3). Equation (4), and Equation (5).

[0095] It is worth noting that, in Figure 2A-2C , Figure 3 and Figures 4A-4C In the illustrated embodiment, the dielectric insert 156 has an inverted conical shape with varying thicknesses at different depths. This advantageously improves the tuning resolution of the capacitive coupling between the sliding electrode 152 and the conductive pin 292 as the sliding ring 150 moves up and down relative to the conductive pin 292. In another embodiment, the insertion hole 154 and the dielectric insert 156 may be concentrically cylindrical, wherein the cylindrical dielectric insert 156 conformally fits the cylindrical insertion hole 154 in the sliding ring 150. In other embodiments, the insertion hole 154 and the dielectric insert 156 may have any suitable shape to generate capacitive coupling between the sliding electrode 152 and the conductive pin 292.

[0096] Figures 6A-6C It shows Figure 1A A simplified cross-sectional view of a portion of the processing chamber, according to one embodiment, illustrates a capacitive coupling configuration between a substrate support 202 and a sliding ring 150 (capacitively connected to an edge ring 210) for adjusting the voltage on the edge ring 210. In this embodiment, the sliding ring 150 is electromechanically coupled to the edge ring 210 and capacitively coupled to the substrate support 202. In one specific embodiment, the sliding ring 150 is physically separable from the substrate support 202, the cooling plate 204, and the base 206. The sliding ring 150 may be generated by an actuator assembly 151 (such as...). Figure 1A (As shown) One or more lifting rods 260 are raised or lowered by the drive.

[0097] exist Figures 6A-6C In this process, the substrate 101, substrate support 202, cooling plate 204, and support ring 214 can be respectively connected to... Figure 2A-2C The substrate 101, substrate support 202, cooling plate 204 and support ring 214 shown are substantially corresponding, but their details are omitted for simplicity.

[0098] like Figure 6A As shown, the processing assembly 200 includes an edge ring 210, a support ring 214, and a sliding ring 150. The sliding ring 150 may include a sliding electrode 152, which comprises a conductive material, such as a metal that may include aluminum, stainless steel, copper, nickel, or other suitable conductive materials. The sliding ring 150 is electromechanically coupled to the edge ring 210 through one or more conductive coupling components 294 (e.g., arc segments, strips, flat springs, etc.). The sliding electrode 152 may be coupled to a bias electrode 104 in the substrate support 202 (e.g., ...). Figure 1A (As shown) capacitive coupling, because waveform generating component 208 (such as...) Figure 1A The photovoltaic waveform generator 208A (shown) is configured as a bias electrode 104.

[0099] like Figures 6A-6CAs shown, the sliding ring 150 is located below the edge ring 210 and can move up and down along the z-axis, while the edge ring 210 remains stationary. In this specific embodiment, when the sliding ring 150 rises toward the edge ring 210, the conductive coupling member 294 is configured to fall into the groove 162 on the top surface 254 of the sliding ring 150. In some specific embodiments, the sliding ring 150 can be raised to make physical and electrical contact with the bottom surface of the edge ring 210. It should be noted that in this embodiment, the sliding ring 150 is electrically isolated from the substrate support assembly 180 and is not electrically connected to power sources (e.g., photovoltaic waveforms provided from the photovoltaic waveform generator 208A and / or DC bias provided from the DC power supply in the clamping network 209).

[0100] In some embodiments, the sliding ring 150 and the lifting rod 260 are interfaced on the bottom surface 256 of the sliding ring 150. For example, the lifting rod 260 may be operatively coupled to the sliding ring 150. The lifting rod 260 is formed by an actuator assembly 151 (such as...). Figure 1A As shown, actuator assembly 151 may include a pneumatic actuator or an electric motor-driven actuator assembly. In some embodiments, the lifting rod 260 may be driven by a lifting rod actuation mechanism (not shown) independent of actuator assembly 151. Actuator assembly 151 allows the sliding ring 150 to move and be positioned vertically within processing chamber 100. Actuator assembly 151 may lift the sliding ring 150 to one or more vertical positions, which may be controlled by system controller 126.

[0101] In another example, the sliding ring 150 can be moved manually without the use of the lifting lever 260. The sliding ring 150 may include a cavity (not shown) and an access aperture formed therein. The cavity is formed downward to the bottom of the sliding ring 150. The cavity is used to receive a lead screw (not shown). The lead screw is rotatable, causing the sliding ring 150 to rise or fall relative to the edge ring 210.

[0102] During substrate processing, bias electrodes 104 (such as those in substrate support 202) can be applied to the substrate support 202. Figure 1A The sliding ring 150 provides source power (e.g., a PV waveform and / or a bias voltage provided by the clamping network 209). When the sliding ring 150 moves along the z-axis and overlaps with the substrate support 202 coupled to the source power, the sliding ring 150 is capacitively coupled to the substrate support 202.

[0103] like Figure 6A As shown, the sliding ring 150 is located below the substrate support 202, wherein the sliding ring 150 and the substrate support 202 do not overlap along the z-axis. Figure 6A In this case, the sliding ring 150 and the substrate support 202 are not capacitively coupled.

[0104] like Figure 6B and6C As shown, the sliding ring 150 is raised to partially and completely overlap with the substrate support 202, respectively. Since the substrate support 202 and the sliding ring 150 overlap along the z-axis, the sliding electrode 152 is capacitively coupled to the bias electrode 104. In one embodiment, the height of the sliding ring 150 is substantially equal to the height of the substrate support 202. In another embodiment, the sliding ring 150 may have a height greater than or less than the height of the substrate support 202.

[0105] By moving the sliding ring 150 relative to the substrate support 202 along the z-axis, the sliding electrode 152 and the bias electrode 104 can be adjusted (e.g., Figure 1A The amount of capacitive coupling between the substrate support 202 and the sliding ring 150 (connected to the edge ring 210) adjusts the voltage on the edge ring 210, which in turn controls the profile of the plasma shell 404 near the edge 406 of the substrate 101 to compensate for critical dimensional uniformity. In other words, controlling the amount of capacitively coupled plasma between the substrate support 202 and the sliding ring 150 (connected to the edge ring 210) affects the voltage on the edge ring 210, and consequently the thickness d of the plasma shell 404.

[0106] The shell thickness d of the plasma shell 404 can be measured relative to the edge ring 210. For example, in Figure 6B In the specific embodiment shown, the sliding ring 150 is composed of an actuator assembly 151 (such as...) Figure 1A As shown, the sliding ring 150 is raised along the z-axis, causing it to partially overlap with the substrate support 202. The overlap amount z1 between the sliding ring 150 and the substrate support 202 results in capacitive coupling between the substrate support 202 and the sliding ring 150. Figure 6B In this process, since the overlap between the sliding ring 150 and the substrate support 202 is z1, the voltage on the edge ring 210 is adjusted to match the voltage on the substrate 101 (e.g., in V...). DC ).like Figure 6B As shown, the plasma shell 404 has a uniform thickness near the edge 406 of the substrate 101. It is noteworthy that... Figure 6B In the middle, the edge ring 210 has an initial thickness t1.

[0107] like Figure 6C As shown, the thickness of the edge ring 210 is from Figure 6B The initial thickness t1 decreases to thickness t2, for example, due to erosion occurring during plasma etching in the processing chamber. When erosion occurs on the edge ring 210, the voltage on the edge ring 210 changes (e.g., decreases). For example, due to erosion, the voltage on the edge ring 210 may be lower than the voltage on the substrate 101 (e.g., lower than V). DC This, in turn, affects the contour of the plasma shell 404 near the edge 406 of the substrate 101.

[0108] To compensate for voltage variations on edge ring 210 and / or maintain uniformity of plasma shell thickness near edge 406 of substrate 101, such as Figure 6C As shown, actuator assembly 151 (such as Figure 1A (As shown) The sliding ring 150 is raised along the z-axis by the lifting rod 260, so that the sliding ring 150 overlaps with the entire height of the base plate support 202. Figure 6B Compared to the capacitive coupling amount of the overlap z1, the overlap z2 between the substrate support 202 and the sliding ring 150 results in an increase in the capacitive coupling between the two components. This increased capacitive coupling adjusts (e.g., increases) the voltage on the edge ring 210 to match the voltage on the substrate 101 (e.g., at V). DC In other words, raising the sliding ring 150 increases the sliding electrode 152 and the bias electrode 104 (as shown in the image). Figure 1A The capacitive coupling between (as shown) is such that, when the thickness of the sliding ring 150 is reduced, for example due to etching, the voltage on the edge ring 210 remains equal to the voltage on the substrate 101. Figure 6C As shown, the outline of the plasma shell 404 remains consistent near the edge 406 of the substrate 101.

[0109] like Figures 6A-6C As shown, the capacitive coupling configuration can control and adjust the amount of capacitive coupling between the bias electrode 104 in the substrate support 202 and the sliding electrode 152 in the sliding ring 150 to adjust the voltage on the edge ring 210, for example, to match it with the voltage on the substrate 101 (e.g., at V). DC ).therefore, Figures 6A-6C The specific embodiment shown enables extremely high edge shell adjustability without physically moving (e.g., raising or lowering) the edge ring 210. In other words, moving the sliding ring 150 relative to the substrate support 202 affects the profile of the plasma shell 404 near the edge 406 of the substrate 101, thereby controlling the direction of ions accelerated through the shell to the surface of the substrate 101.

[0110] When a constant potential (e.g. V) is applied DC In the configuration where the bias applied to the sliding ring 150 is pulsed, the shell thickness d is controlled during the ion current phase of each pulse, so that the thickness and shape of the plasma shell 404 remain constant throughout the primary etching portion of the PV waveform.

[0111] Figure 7 The illustration shows a capacitive coupling configuration described according to one specific embodiment. Figure 6A A simplified schematic diagram of the sliding ring 150, the substrate support 202, and the edge ring 210. (See attached diagram.) Figure 7 As shown, edge ring 210 and substrate support 202 are stationary. Edge ring 210 is electromechanically coupled to sliding ring 150 via two or more conductive coupling elements 294 (e.g., straps). Sliding ring 150 is movable relative to substrate support 202 and edge ring 210 along the z-axis. When sliding ring 150 is lifted by actuator assembly 151 (e.g.) Figure 1A As shown, the conductive coupling component 294 falls into the groove 162 formed on the top surface of the sliding ring 150. The groove 162 follows the contour of the sliding ring 150.

[0112] Figure 8A The sliding ring 150 and the substrate support 202 are shown in Figure 7 A cross-sectional view on the AA plane. (See diagram below.) Figure 8A As shown, the sliding ring 150 is located below the substrate support 202, and there is no overlap along the z-axis. Therefore, there is no capacitive coupling between the sliding ring 150 and the substrate support 202.

[0113] Figure 8B Showing Figure 8A Another cross-sectional view of the sliding ring 150 and substrate support 202 shown is provided, in which the sliding ring 150 is raised such that it partially overlaps with the substrate support 202 along the z-axis. When the substrate support 202 is biased by a power supply, the sliding ring 150 is capacitively coupled to the substrate support 202 (capacitance C1) because the sliding ring 150 and the substrate support 202 are separated by a dielectric (e.g., air).

[0114] Figure 8C It shows Figure 4A Another cross-sectional view of the sliding ring 150 and substrate support 202 shown in the diagram, according to one embodiment, shows the sliding ring 150 raised such that it completely overlaps the substrate support 202 along the z-axis. When the substrate support 202 is biased by a power supply, the sliding ring 150 is capacitively coupled to the substrate support 202 (capacitance C2) because the sliding ring 150 and the substrate support 202 are separated by a dielectric (e.g., air). Figure 8C The overlap between the sliding ring 150 and the base plate support 202 is greater than Figure 8B The overlap in capacitance is such that capacitor C2 is greater than capacitor C1 (i.e., C2>C1).

[0115] Figure 9A This illustrates a specific embodiment. Figure 7 Cross-sectional view of the sliding ring 150. (See diagram below.) Figure 9AAs shown, the sliding electrode 152 is made of a conductive material and has a substantially uniform thickness (e.g., along the x-axis). The sliding ring 150 includes a groove 162 in its top surface 254, wherein the groove 162 follows the contour of the sliding ring 150. When the sliding ring 150 is lifted toward the edge ring 210, the conductive coupling member 294 falls into the groove 162 along the contour of the sliding ring 150.

[0116] Figure 9B It shows a specific embodiment. Figure 7 A cross-sectional view of the sliding ring 150. In this specific embodiment, the sliding ring 150 has one or more insertion holes 154 extending from the top surface 254 of the sliding ring 150 to the bottom surface 256. Each insertion hole 154 is recessed from the top surface 254 and includes an inner sidewall 158 that tapers towards the bottom surface 256 to receive a dielectric insert 156. Each dielectric insert 156 has an inverted conical shape adapted to the tapered inner sidewall 158 of the insertion hole 154. In one example, the dielectric insert 156 may be formed by coating the insertion hole 154 with a ceramic material. A conductive core 166 is formed in a through-hole at the center of the dielectric insert 156 and extends through the entire height of the dielectric insert 156 (e.g., along the z-axis). The tapered inner sidewall 158 of the insertion hole 154 allows the dielectric insert 156 to have different thicknesses at different depths. Therefore, given the different dielectric thicknesses at different depths, the capacitive coupling between the substrate support 202 and the sliding ring 150 can be adjusted with high precision. For example... Figure 9B As shown, the sliding ring 150 includes a groove 162 in its top surface 254, wherein the groove 162 follows the contour of the sliding ring 150. When the sliding ring 150 is lifted toward the edge ring 210, the conductive coupling member 294 falls into the groove 162 along the contour of the sliding ring 150.

[0117] Figure 10 A simplified schematic diagram of another capacitive coupling configuration according to another specific embodiment is shown. Figure 10 The substrate support 202, edge ring 210, and conductive coupling component 294 can be respectively connected to... Figure 7 The substrate support 202, edge ring 210, and conductive coupling component 294 in the figure correspond substantially to each other; for simplicity, details are omitted. Figure 7 The difference is, Figure 10 The sliding ring 150 has a tapered inner sidewall 164. When the sliding ring 150 moves up and down relative to the substrate support 202 along the z-axis, the sliding ring 150 with the tapered inner sidewall 164 can advantageously improve the tuning resolution of the capacitive coupling between the sliding ring 150 and the substrate support 202.

[0118] Figure 11A The sliding ring 150 and the substrate support 202 are shown in Figure 10 A cross-sectional view on the AA plane. (See diagram below.) Figure 11A As shown, the sliding ring 150 has a tapered inner sidewall 164. Figure 11A Since the sliding ring 150 is located below the substrate support 202, there is no overlap along the z-axis. Therefore, there is no capacitive coupling between the sliding ring 150 and the substrate support 202.

[0119] Figure 11B Showing Figure 11A Another cross-sectional view of the sliding ring 150 and substrate support 202 shown is provided, in which the sliding ring 150 is raised such that it partially overlaps with the substrate support 202 along the z-axis. When the substrate support 202 is biased by a power supply, the sliding ring 150 is capacitively coupled to the substrate support 202 (capacitance C1) because the sliding ring 150 and the substrate support 202 are separated by a dielectric (e.g., air).

[0120] Figure 11C It shows Figure 11A Another cross-sectional view of the sliding ring 150 and substrate support 202 shown, wherein, according to one embodiment, the sliding ring 150 is raised such that the sliding ring 150 completely overlaps with the substrate support 202 along the z-axis. When the substrate support 202 is biased by a power supply, the sliding ring 150 is capacitively coupled to the substrate support 202 (capacitance C2) because the sliding ring 150 and the substrate support 202 are separated by a dielectric (e.g., air). Figure 11C The overlap between the sliding ring 150 and the base plate support 202 is greater than Figure 11B The overlap in capacitance is such that capacitor C2 is greater than capacitor C1 (i.e., C2>C1).

[0121] Figure 12A A schematic diagram of a conductive coupling component for electromechanically connecting a sliding ring and an edge ring, according to a specific embodiment, is shown. Figure 12A As shown, the coupling member 630 includes a body 633 formed of a conductive material. The body 633 includes a first end 631 connected to the second end 632 through a middle section 655. The body 633 also includes connection points 620 on the first end 631 and the second end 632. The connection point 620 can be a hole suitable for fasteners. In one example, the connection point 620 is a through hole suitable for bolt-type fasteners. In another example, the connection point 620 is a threaded hole suitable for receiving screw-type fasteners. In other examples, the connection point 620 can also be welded to the coupling member 630. It should be understood that the connection point 620 can be any suitable mechanism that facilitates electromechanical coupling, such as electromechanical coupling between the coupling member 630 and the sliding ring 150, and between the coupling member 630 and the edge ring 210. It should be noted that in Figure 12AIn the specific embodiment shown, the coupling member 630 includes a stepped surface. In another specific embodiment, the stepped surface may be optional, in which case the coupling member 630 includes a flat body (e.g., a flat spring).

[0122] Figure 12B This illustrates a specific embodiment of... Figure 12A A schematic diagram showing the electromechanical coupling of the conductive coupling components to the sliding ring and the edge ring. (See diagram for example.) Figure 12B As shown, the coupling member 630 is electromechanically connected to the sliding ring 150 at a first connection position 641 on the first end 631 via a fastener 646. For example, the sliding ring 150 may have one or more holes aligned with the connection point 620 of the first connection position 641. Bolts, screws, rivets, welds, or other suitable fasteners may extend through each connection point 620 and the holes on the sliding ring 150 to electromechanically couple the first end 631 of the coupling member 630 to the sliding ring 150.

[0123] like Figure 12B As shown, the coupling member 630 is connected to the edge ring 210 via a fastener 648 at a second connection point 642 on the second end 632. In one embodiment, the edge ring 210 includes a lower edge ring 210A and an upper edge ring 210B located on top of the lower edge ring 210A. The lower edge ring 210A can be coupled or engaged with the upper edge ring 210B via conductive adhesive or any suitable mechanism. The upper edge ring 210B is made of SiC or other suitable conductive material. The lower edge ring 210A, being made of conductive material, provides a strong holding force to secure the coupling member 630 to the edge ring 210 via the fastener 648. For example, the lower edge ring 210A may have one or more holes aligned with the connection point 620 of the second connection point 642. Bolts, screws, rivets, welds, or other suitable fasteners may extend through each connection point 620 and the holes in the lower edge ring 210A for electromechanically coupling the second end 632 of the coupling member 630 to the edge ring 210. In another embodiment, the lower edge ring 210A may be optional, such that the coupling member 630 is connected to the upper edge ring 210B via the fastener 648.

[0124] The coupling member 630 is configured to allow the sliding ring 150 to move relative to the edge ring 210. For example, the middle section 655 of the body 633 is configured to elastically deform while maintaining mechanical and electrical communication between the first end 631 and the second end 632 of the body 633. For example, the middle section 655 may be a thin metal sheet. Alternatively, the middle section 655 may also be a wire. The middle section 655 is configured to allow the first end 631 of the body 633 to move relative to the second end 632 of the body 633. For example, the middle section 655 may deflect or bend when the sliding ring 150 is vertically displaced.

[0125] The coupling member 630 may be formed of aluminum. In some embodiments, the coupling member 630 may be uncoated to ensure good conductivity throughout its service life. In some embodiments, the sliding ring 150 may be formed of aluminum. The sliding ring 150 may be anodized along its top surface 254. The sliding ring 150 may additionally be anodized with a yttrium coating along its top surface 254. The coupling member 630 is electrically connected to the sliding ring 150 via screws or other suitable fasteners.

[0126] Figure 12C An illustration shows a configuration according to a specific embodiment. Figure 12B A top plan view of the coupling member 630 on the top surface 254 of the sliding ring 150 shown. Figure 12C As shown, the coupling member 630 is located on the top surface 254 of the sliding ring 150 and has an arcuate shape along the contour of the sliding ring 150, as shown in the top plan view. When the sliding ring 150 is lifted toward the edge ring 210, the coupling member 630 rests on the top surface 254 along the contour of the sliding ring 150.

[0127] Figure 13 A flowchart of a method 1300 for processing a substrate according to one specific embodiment is shown. Figure 13 As shown, block 1302 includes positioning the substrate on a substrate support disposed in a substrate processing chamber, the substrate being surrounded by an edge ring, such as... Figure 1A As shown. Block 1304 includes the formation of plasma above the substrate, as... Figure 1A As shown. Block 1306 includes adjusting the voltage on the edge ring by moving a sliding ring in a direction that changes the amount of capacitive coupling between the edge ring and the cathode of the power source, to control the plasma shell near the edge of the substrate. According to some specific embodiments, the capacitive coupling between the edge ring and the cathode may be between the sliding ring 150 and the conductive pin 292 (connected to the edge ring 210), wherein the sliding ring 150 is electrically coupled to the cathode, as shown above. Figure 2A-2C As shown in 3 and 4A-4C and refer to Figure 2A-2C 3 and 4A-4C are described. According to some specific embodiments, capacitive coupling between the edge ring and the cathode can occur between the sliding ring 150 (connected to the edge ring 210) and the substrate support 202, wherein the substrate support 202 is electrically coupled to the cathode, as referred to above. Figures 6A-6C Figures 7, 8A-8C, 9A-9B, 10, 11A-11C, and 12A-12C are shown and described. In some specific embodiments, a single-output DC pulsed voltage bias source can be used to bias the voltage on the substrate and capacitively bias the voltage on the edge ring. According to specific embodiments, capacitive coupling can be adjusted while the edge ring remains stationary, thereby substantially reducing particle generation problems.

[0128] While the above description pertains to specific implementation methods, other and further implementation methods can be designed without departing from their essential scope, the scope of which is determined by the preceding claims.

Claims

1. A processing sleeve for a substrate processing chamber, the processing sleeve comprising: An edge ring configured to surround a substrate in the semiconductor processing chamber; At least one conductive pin, the at least one conductive pin being electrically coupled to the edge ring; A sliding ring, located below the edge ring, the sliding ring including at least one insertion hole for receiving the at least one conductive pin; as well as An actuator operable to displace the sliding ring relative to the at least one conductive pin in a direction that can change the amount of capacitive coupling between the at least one conductive pin and the sliding ring.

2. The processing kit as described in claim 1, wherein: A dielectric insert is located in the at least one insertion hole, the dielectric insert having a through hole; and The at least one conductive pin is operable to extend into the through-hole formed in the dielectric insert.

3. The processing kit as described in claim 1, wherein: The at least one insertion hole has a tapered inner sidewall; and A dielectric insert having an inverted conical shape and located in the at least one insertion hole, and conformally fitting along the tapered inner sidewall.

4. The processing sleeve as claimed in claim 1, wherein at least one conductive pin protrudes from the bottom surface of the edge ring.

5. The processing sleeve of claim 1, wherein the displacement of the edge ring relative to the sliding ring in the substrate processing chamber is stationary.

6. The processing kit as claimed in claim 1, wherein the processing kit further comprises: A power coupling mechanism that can electromechanically couple the sliding ring to the cathode of a DC power supply.

7. The processing kit of claim 1, wherein when the sliding ring is electrically coupled to a power source, the voltage on the edge ring is adjusted by changing the amount of capacitive coupling between the at least one conductive pin and the sliding ring to control the plasma shell near the edge of the substrate.

8. A processing sleeve for a substrate processing chamber, the processing sleeve comprising: An edge ring configured to surround a substrate in the semiconductor processing chamber; A sliding ring, located below the edge ring and electromechanically coupled to the edge ring via at least one coupling member; as well as An actuator operable to displace the sliding ring in a direction that can change the amount of capacitive coupling between the sliding ring and the base plate supporting the substrate.

9. The processing sleeve of claim 8, wherein the sliding ring has a tapered inner sidewall.

10. The processing assembly of claim 8, wherein the sliding ring and the base plate are separated by a dielectric material.

11. The processing sleeve of claim 8, wherein the edge ring is stationary in the substrate processing chamber.

12. The processing kit as claimed in claim 8, wherein: The sliding ring includes at least one insertion hole for receiving a dielectric insert, and a conductive core located in the dielectric insert. The conductive core is electromechanically coupled to the at least one coupling component.

13. The processing kit as described in claim 12, wherein: The at least one insertion hole has a tapered inner sidewall; and The dielectric insert has an inverted conical shape and conforms to the tapered inner wall.

14. The processing assembly of claim 8, wherein the at least one coupling member is configured to be fastened to the top surface of the sliding ring.

15. The processing kit of claim 8, wherein the at least one coupling member is configured to be fastened to the bottom surface of the edge ring.

16. The processing assembly of claim 8, wherein the at least one coupling member has a profile along the top surface of the sliding ring.

17. The processing kit as claimed in claim 8, wherein: The edge ring includes a lower edge ring and an upper edge ring located on the lower edge ring; The at least one coupling component electromechanically connects the sliding ring to the lower edge ring.

18. The processing assembly of claim 8, wherein the at least one coupling component comprises one of an arcuate segment, a strap, and a flat spring.

19. The processing assembly of claim 8, wherein when the base plate is electrically coupled to the cathode providing DC power, the voltage on the edge ring is adjusted by changing the amount of capacitive coupling between the base plate and the sliding ring to control the plasma shell near the edge of the substrate.

20. A method for processing a substrate, the method comprising: The substrate is positioned on a substrate support disposed in a substrate processing chamber, and the substrate is surrounded by an edge ring. Plasma is formed above the substrate; as well as The voltage on the edge ring is adjusted by moving the sliding ring in the direction that changes the capacitive coupling between the edge ring and the cathode of the power source, thereby controlling the plasma shell near the edge of the substrate.

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