Support reinforcement embedded in a substrate

Abstract

In one aspect, an apparatus can include a package substrate including a metallization structure disposed in the package substrate. The metallization structure includes a plurality of conductive layers and a plurality of dielectric layers. The package substrate includes an embedded standoff stiffener disposed on a perimeter of the metallization structure outside the metallization structure. The embedded standoff stiffener includes a plurality of standoff posts and a plurality of standoff layers stacked vertically.

Description

Technical Field

[0001] This disclosure relates in its entirety to semiconductor devices including integrated circuit (IC) packages, and more specifically, but not exclusively, to devices including substrates with embedded support reinforcements and the techniques for manufacturing such devices. Background Technology

[0002] IC technology has made significant strides in improving computing power through the miniaturization of electronic components. A semiconductor device (commonly referred to as an IC chip, IC die, chip, or die) may include a set of circuitry integrated thereon. In some specific embodiments, an IC device may be formed by incorporating and protecting one or more IC chips or dies within an IC package, wherein various power and signal nodes of the one or more IC chips are electrically coupled to corresponding conductive terminals of the IC package via electrical paths formed in one or more packaging substrates of the IC package. Unless otherwise stated, the term "substrate" in this disclosure refers to a packaging substrate used to encapsulate one or more dies into an IC package, which is distinct from the semiconductor substrate used to form the die.

[0003] Various packaging technologies are found in many electronic devices, including processors, servers, and radio frequency (RF) ICs. Advanced packaging and processing technologies enable complex devices such as multi-die devices and system-on-a-chip (SoC) devices, which may include multiple functional blocks, each designed to perform a specific function, such as microprocessor functions, graphics processing unit (GPU) functions, communication functions (e.g., Wi-Fi, Bluetooth, and other communications). As used herein, the term "functional block" should not be construed as a power line or signal line, trace, conductor, pad, etc., used only for transmitting voltage and / or current.

[0004] As designs become increasingly complex, package warpage control is crucial for achieving high yields during final integration into end devices such as mount / electrocoupled dies, packages, interposers, surface mount technology (SMT) devices, SOC devices, motherboards / printed circuit boards (PCBs), etc. Significant efforts have been made to modify substrate materials and molding compounds, as well as to utilize external reinforcements / caps to control package warpage. Warpage control becomes even more challenging as package footprint increases and package thickness decreases.

[0005] Therefore, there is a need to improve the packaging substrates of semiconductor devices and their manufacturing methods to address the shortcomings in conventional designs, as disclosed herein. Summary of the Invention

[0006] The following is a simplified summary of the invention relating to one or more aspects disclosed herein. Therefore, this summary should not be considered an exhaustive overview relating to all conceived aspects, nor should it be considered to identify key or decisive elements relating to all conceived aspects or to depict the scope associated with any particular aspect. Thus, the sole purpose of this summary is to present, in a simplified form, certain concepts relating to one or more aspects involving the mechanisms disclosed herein, prior to the detailed description presented below.

[0007] At least one aspect described herein includes an apparatus having a packaging substrate, the apparatus comprising: a metallization structure disposed in the packaging substrate, wherein the metallization structure includes a plurality of conductive layers and a plurality of dielectric layers; and an embedded support reinforcement disposed on the periphery of the metallization structure outside the metallization structure, wherein the embedded support reinforcement includes a plurality of support pillars and a plurality of vertically stacked support layers, each support layer including: a metal layer; a plurality of short pillars coupled to the metal layer; a dielectric layer disposed above the metal layer and the plurality of short pillars; and a plurality of vias configured to pass through the dielectric layer and coupled to the plurality of short pillars, wherein the plurality of support pillars includes vertically aligned short pillars and vias coupled to the metal layer in each of the plurality of support layers.

[0008] At least one aspect described herein includes a method of manufacturing an apparatus, the method comprising: forming a metallization structure disposed in a package substrate, wherein the metallization structure includes a plurality of conductive layers and a plurality of dielectric layers; and forming an embedded support reinforcement disposed on the periphery of the metallization structure outside the metallization structure, wherein the embedded support reinforcement includes a plurality of support pillars and a plurality of vertically stacked support layers, each support layer being formed by: forming a metal layer; forming a plurality of short pillars coupled to the metal layer; depositing a dielectric layer over the metal layer and the plurality of short pillars; and forming a plurality of vias configured to pass through the dielectric layer and coupled to the plurality of short pillars, wherein the plurality of support pillars includes vertically aligned short pillars and vias coupled to the metal layer in each of the plurality of support layers.

[0009] Based on the accompanying drawings and detailed description, other objects and advantages associated with the aspects disclosed herein will be apparent to those skilled in the art. Attached Figure Description

[0010] The accompanying drawings are provided to help describe various aspects of this disclosure, and are provided for illustrative purposes only and not to limit the aspects.

[0011] Figure 1A and Figure 1BThis is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0012] Figure 2A and Figure 2B This is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0013] Figure 3 This is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0014] Figure 4 This is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0015] Figure 5A and Figure 5B This is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0016] Figure 6 This is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0017] Figure 7 This is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0018] Figure 8 This is a partial cross-sectional view of the apparatus according to various aspects of this disclosure.

[0019] Figure 9 These are partial plan views and partial cross-sectional views of the apparatus according to various aspects of this disclosure.

[0020] Figure 10 These are partial plan views and partial cross-sectional views of the apparatus according to various aspects of this disclosure.

[0021] Figure 11 These are partial plan views and partial cross-sectional views of the apparatus according to various aspects of this disclosure.

[0022] Figures 12A to 12H Structures of various stages of the manufacturing / fabricating apparatus according to various aspects of this disclosure are illustrated.

[0023] Figure 13 A method of apparatus for manufacturing / fabricating a substrate having an embedded support reinforcement is illustrated according to various aspects of this disclosure.

[0024] Figure 14 Mobile devices according to various aspects of this disclosure are illustrated.

[0025] Figure 15 Various electronic devices that can be incorporated with a substrate having an embedded support reinforcement as disclosed herein are illustrated according to various aspects of this disclosure.

[0026] By convention, the features depicted in the accompanying drawings may not be drawn to scale. Accordingly, for clarity, the dimensions of the depicted features may be arbitrarily enlarged or reduced. By convention, some drawings are simplified for clarity. Therefore, the drawings may not depict all components of a particular device or method. Furthermore, similar reference numerals are used throughout the specification and drawings to represent similar features. Detailed Implementation

[0027] Various aspects of this disclosure are provided in the following description and accompanying drawings of various examples provided for illustrative purposes. Alternative aspects may be devised without departing from the scope of this disclosure. Additionally, well-known elements of this disclosure will not be described in detail or will be omitted so as not to obscure the relevant details of this disclosure.

[0028] The terms “exemplary” and / or “example” are used herein to mean “serving as an example, instance, or illustration.” Any aspect described herein as “exemplary” and / or “example” is not necessarily to be construed as superior to or better than other aspects. Similarly, the term “aspects of this disclosure” does not require that all aspects of this disclosure include the features, advantages, or modes of operation discussed.

[0029] In some of the described example implementations, instances are identified where various component structures and operational parts are derived from known conventional techniques and subsequently arranged according to one or more aspects. In such instances, internal details of known conventional component structures and / or operational parts may be omitted to help avoid potential confusion with the concepts illustrated in the exemplary aspects disclosed herein.

[0030] The terminology used herein is for descriptive purposes only and is not intended to be limiting. As used herein, the singular forms “a,” “some,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the term “comprising,” as used herein, indicates the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Additionally, as used herein, terms such as “about,” “approximately,” “generally,” “substantially within,” etc., indicate that the examples provided are not intended to be limited to precise numerical values, geometries, angles, etc., and include normal variations due to manufacturing tolerances and variations, material variations, and other design considerations. Furthermore, as used herein, terms such as “top,” “bottom,” “above,” “below,” “first,” “last,” “front,” “back,” “adjacent,” etc., indicate convenient indications of the orientation, assembly, or arrangement of the various elements in the examples provided and should not be construed as absolute orientation, assembly, or arrangement.

[0031] As noted above, conventional designs cannot adequately address the warpage issue of substrates used in package substrates. The disclosed aspects provide additional design options for controlling warpage, such as adding reinforcements within the substrate (e.g., embedded bracket reinforcements). In some aspects, if the additional embedded bracket reinforcement is used as a ring around the periphery of the metallized structure / package substrate, it can increase the xy footprint of the IC package, but the improvement in warpage is sufficient to justify the increased area. In some aspects, the embedded bracket reinforcement can also be grounded. In some aspects, the embedded bracket reinforcement can be used as part of a Faraday cage to reduce noise and improve the isolation of sensitive circuitry across the package substrate. In some aspects, a metal cap or external reinforcement can be used in conjunction with the embedded bracket reinforcement.

[0032] In various aspects disclosed, embedded support reinforcements can be provided to enhance design flexibility, which reduces substrate warping compared to conventional designs.

[0033] Figure 1A and Figure 1B This is a partial cross-sectional view of the apparatus 100 according to various aspects of this disclosure. In some aspects, Figure 1A and Figure 1B This is a simplified cross-sectional view of device 100 and... Figure 1A and Figure 1B Some details and components of device 100 may be simplified or omitted. In some respects, device 100 may be part of an IC package and / or a larger device (such as a mobile phone).

[0034] like Figure 1A As shown, in some aspects, device 100 includes: a die 110 disposed on a top surface of package substrate 120; an embedded support reinforcement 150; and a connector 130 disposed on a bottom surface of package substrate 120. In various disclosed aspects, the embedded support reinforcement 150 is part of package substrate 120. In some aspects, package substrate 120 may include: a metallization structure 121 disposed within package substrate 120. The metallization structure may include a plurality of conductive layers 124 and a plurality of dielectric layers 122. In some aspects, the metallization structure 121 may serve at least partially as a redistribution layer (RDL) or otherwise provide connectivity from die 110 to connector 130. In some aspects, connector 130 may be a ball grid array (BGA) including a plurality of solder balls, a planar grid array (LGA) including a plurality of pins configured to mat with a socket connector on an external device (e.g., a PCB), copper pillars, or any suitable electrical connector.

[0035] Figure 1BA more detailed view of the embedded bracket reinforcement 150 is illustrated. In some aspects, the embedded bracket reinforcement 150 includes a plurality of bracket posts 155 and a plurality of bracket layers 151 (e.g., 151a to 151n). The plurality of bracket layers 151 are formed by a plurality of metal layers 152, a plurality of short posts 153 encapsulated in a plurality of dielectric layers 122, and a plurality of vias 154 configured to pass through the plurality of dielectric layers 122 and couple to the plurality of short posts 153, as discussed herein. The plurality of bracket posts 155 include vertically aligned short posts 153 and vias 154 coupled to the metal layers 152 in each of the plurality of bracket layers 151. A common label (e.g., dielectric layer 122) may be used to refer to a single element or multiple elements, particularly if each element is functionally identical and / or the final assembly can be integrated into a common unit. Additionally, as used herein, elements with subscripts may indicate a specific element within a plurality of elements for ease of reference. For example, the plurality of support layers 151 include: a support layer 151a, the support layer including a metal layer 152a; a plurality of short pillars 153a coupled to the metal layer 152a; and a dielectric layer 122a disposed above the metal layer 152a and the short pillars 153a. The support layer 151a further includes: a plurality of vias 154a configured to pass through the dielectric layer 122a and coupled to the plurality of short pillars 153a. Each of the plurality of vias 154a is coupled to a next metal layer (e.g., metal layer 151b) of the next support layer in the plurality of support layers 151a to 151n. Therefore, the bracket layers 151a to 151n of the embedded bracket reinforcement 150 can be designed as any number of layers and sequentially coupled until the last bracket layer 151n, wherein a plurality of vias 154n are coupled to the base metal layer 156 of the last bracket layer 151n adjacent to the plurality of bracket layers 151a to 151n.

[0036] The embedded bracket reinforcement 150 may be disposed on the periphery of the metallized structure 121 outside the metallized structure 121 (or on the periphery of the package substrate 120), as illustrated. It should be understood that the periphery of the metallized structure 121 defines a specific area within the package substrate 120, which may be associated with one or more dies 110 and associated components (if any), one or more functional blocks, or the entire package substrate. Furthermore, for ease of illustration, the periphery of the package substrate 120 and / or the periphery of the metallized structure 121 may be used to describe the location of the embedded bracket reinforcement 150 and may be substantially the same in many configurations. Moreover, it should be understood that the various aspects disclosed and claimed herein should not be construed as limited to these specific examples.

[0037] In some aspects, at least a portion of the top of the embedded bracket reinforcement 150 or the first metal layer (e.g., 151a) may be exposed through openings in the first solder mask layer 126 to allow coupling to other components, as discussed herein. In some aspects, the base metal layer 156 may be coupled to the connector 130 through openings in the second solder mask layer 127 to allow coupling to external components (e.g., PCB, additional package substrate, interposer, etc.) and / or ground potential, as discussed herein.

[0038] Figure 2A and Figure 2B This is a partial cross-sectional view of the apparatus 200 according to various aspects of this disclosure. In some aspects, Figure 2A and Figure 2B It is a simplified cross-sectional view of device 200 and in Figure 2A and Figure 2B Some details and components of the device 200 may be simplified or omitted, especially with Figure 1A and Figure 1B Similar details. In some respects, device 200 may be part of an IC package and / or a larger device (such as a mobile phone).

[0039] like Figure 2A As shown, in some aspects, device 200 includes: a die 210 coupled to package substrate 220; an embedded support reinforcement 250; a top external reinforcement 260; and a connector 230. In various aspects, the embedded support reinforcement 250 is part of package substrate 220. In some aspects, package substrate 220 may include: a metallization structure 221 disposed within package substrate 220. The metallization structure may include: a plurality of conductive layers 224 including metal layers and vias; and a plurality of dielectric layers 222. The embedded support reinforcement 250 may be disposed on the periphery of metallization structure 221 outside of metallization structure 221 (or on the periphery of package substrate 220), as illustrated.

[0040] Furthermore, the top external reinforcement 260 may be disposed on top of the embedded bracket reinforcement 250 and coupled to the embedded bracket reinforcement 250 via the bonding layer 262. The top external reinforcement 260 may be conductive or non-conductive. Similarly, the bonding layer 262 may be conductive or non-conductive. It should be understood that the top external reinforcement 260 provides further reinforcement to the package substrate 220.

[0041] Figure 2BA more detailed view of the embedded bracket reinforcement 250 and the top external reinforcement 260 is illustrated. In some aspects, the embedded bracket reinforcement 250 includes a plurality of bracket posts 255 and a plurality of bracket layers 251 (e.g., 251a, 251b...251n). As discussed above, each of the other bracket layers includes: a metal layer; a plurality of short posts coupled to the metal layer; a dielectric layer disposed above the metal layer and the short posts; and a via interconnecting the short posts to subsequent metal layers. To avoid redundancy and clutter in the figures, each of these elements may not be individually identified and / or illustrated. In some aspects, the same dielectric layer in the package substrate 220 is used in the embedded bracket reinforcement 250. In some aspects, the metallization structure 221 may be formed using the same material as the embedded bracket reinforcement 250. It should be understood that the support layers 251a to 251n of the embedded support reinforcement 250 can be designed as any number of layers and sequentially coupled until the last support layer 251n of the plurality of support layers 251a to 251n is coupled to the base metal layer 256 adjacent to the last support layer 251n. Furthermore, as illustrated, in some aspects, a bonding layer 262 couples the top external reinforcement 260 to the embedded support reinforcement 250 at the top support layer 251a. In some aspects, the bonding layer 262 can be an adhesive, such as epoxy resin, or it can be a conductive solder to ground the top external reinforcement 260. In some aspects, the top external reinforcement 260 can be a metal, such as stainless steel. In some aspects, the top external reinforcement 260 can be formed of a non-metallic material or another substrate (such as an interposer, PCB, etc.).

[0042] In some aspects, at least a portion of the top metal layer (e.g., 251a) of the top support layer 251a may be exposed through an opening in the first solder mask layer 226 to allow coupling to the top external reinforcement 260 via the bonding layer 262. In some aspects, the base metal layer 256 may be coupled to the connector 230 through an opening in the second solder mask layer 227 to allow coupling to external components and / or ground potentials, as discussed herein.

[0043] Figure 3 This is a partial cross-sectional view of apparatus 300 according to various aspects of this disclosure. In some aspects, Figure 3 This is a simplified cross-sectional view of device 300 and can be viewed in... Figure 3 The simplified or omitted details and components of device 300, particularly those related to the aforementioned Figures 1A to 2B Similar details. In some respects, device 300 may be part of an IC package and / or a larger device (such as a mobile phone).

[0044] like Figure 3As shown, in some aspects, device 300 includes: a die 310 coupled to a package substrate 320; an embedded support reinforcement 350; a top external reinforcement 360; a cover 365; and a connector 330. It should be noted that, depending on the desired cover configuration, the cover 365 and the reinforcement 360 may be separate or a single integral component. In some aspects, the embedded support reinforcement 350 includes a plurality of support pillars 355 and a plurality of support layers 351. In various disclosed aspects, the embedded support reinforcement 350 is part of the package substrate 320. In some aspects, the package substrate 320 may include: a metallization structure 321 disposed within the package substrate 320. The metallization structure 321 may include: a plurality of conductive layers 324 including metal layers and vias; and a plurality of dielectric layers 322 disposed between the metal layers. An embedded bracket reinforcement 350 may be disposed on the periphery of the metallized structure 321 (or the periphery of the package substrate 320) outside the metallized structure 321, as illustrated. Furthermore, a top external reinforcement 360 may be disposed on top of the embedded bracket reinforcement 350 and coupled to the embedded bracket reinforcement 350 via a bonding layer 362. A cover 365 is coupled to the top external reinforcement 360 and, in some respects, may be formed as an integrated (monolithic) structure with the top external reinforcement. In some respects, the cover 365 may be coupled to the die 310 via a cover adhesive 366. It should be understood that the cover 365, in conjunction with the top external reinforcement 360, provides additional rigidity to prevent substrate warping. Furthermore, the cover 365 may provide a thermal cooling path for the die 310 via the cover adhesive 366. In some respects, the cover 365, coupled with the top external reinforcement 360, substantially surrounds the top portion of the die 310 and the package substrate 320. In some respects, the cover 365, combined with the top external reinforcement 360, can be configured to serve as a Faraday cage for the die 310. For example, the cover 365 and the top external reinforcement 360 can be conductive and coupled to ground to provide enhanced EMI shielding and noise suppression.

[0045] In some aspects, the top external reinforcement 360 and / or the cover 365 may be conductive. In other aspects, the top external reinforcement 360 and / or the cover 365 may be non-conductive. Similarly, the bonding layer 362 and / or the cover adhesive 366 may be conductive or non-conductive. It should be understood that the top external reinforcement 360 and the cover 365 provide further reinforcement to the package substrate 320.

[0046] Figure 4 This is a partial cross-sectional view of apparatus 400 according to various aspects of this disclosure. In some aspects, Figure 4 This is a simplified cross-sectional view of device 400 and can be viewed in... Figure 4 The simplified or omitted details and components of device 400, particularly those related to the aforementioned Figures 1A to 3Similar details. In some respects, device 400 may be part of an IC package and / or a larger device (such as a mobile phone).

[0047] Figure 4 Detailed views of the embedded support reinforcement 450 and top external reinforcement 460 of device 400 are illustrated. This device is similar to device 300, except that the top external reinforcement may include: a first portion 460a, which is substantially perpendicularly aligned with the embedded support reinforcement 450; and a second portion 460b, which extends over the wire-wound region (e.g., metallized structure) of the package substrate 420. In some aspects, the embedded support reinforcement 450 includes a plurality of support pillars 455 and a plurality of support layers 451 (e.g., 451a, 451b...451n). As discussed above, each of the other support layers 451 includes: a metal layer; a plurality of short pillars coupled to the metal layer; a via; and a dielectric layer 422 disposed above the metal layer, the short pillars, and the via. To avoid redundancy and clutter in the figures, each of these elements may not be individually identified and / or illustrated. In some aspects, the same dielectric layer 422 in the package substrate 420 is used in the embedded bracket reinforcement 450. In some aspects, the metallization structure may be formed using the same material as the embedded bracket reinforcement 450. It should be understood that the bracket layers 451a to 451n of the embedded bracket reinforcement 450 can be designed as any number of layers and sequentially coupled until the last bracket layer 451n of the plurality of bracket layers 451a to 451n is coupled to the base metal layer 456 adjacent to the last bracket layer 451n. Furthermore, as illustrated, in some aspects, a bonding layer 462 couples the top outer reinforcement 460 to the embedded bracket reinforcement 450 at the top bracket layer 451a. In some aspects, the bonding layer 462 may be an adhesive, such as epoxy resin or solder. In some aspects, the top outer reinforcement 460 may be a metal, such as stainless steel. In some aspects, the top outer reinforcement 460 may be another substrate, such as an interposer, PCB, etc.

[0048] It should be understood that, in the various aspects disclosed, the number of support layers 451a to 451n is not limited to a specific number of layers. In some aspects, the base metal layer 456 may be coupled to the connector 430 through an opening in the second solder mask layer 427 to allow coupling to external components and / or ground potentials, as discussed herein.

[0049] In some aspects, at least a portion of the top metal layer of the top support layer 451a may be exposed through an opening in the first solder mask layer 426 to allow coupling to the top outer reinforcement 460 via the bonding layer 462. In some aspects, the bonding layer 462 may be an adhesive. In some aspects, the bonding layer 462 may be a conductive material, such as solder. In some aspects, the bonding layer 462 may include: an adhesive portion 462b; and a conductive portion 462a that contacts the top support layer 451a. In some aspects, the top outer reinforcement 460 (also referred to in some aspects as a cap foot) is coupled to the bonding layer 462 in an area other than the solder mask opening in the first solder mask layer 426 (e.g., the second portion 460b) to improve warpage performance, reduce the footprint of the embedded support reinforcement 450, and reduce negative impacts on the area available for wire winding (which may be used below the second portion 460b of the top outer reinforcement 460). Furthermore, it should be understood that, in some respects, as discussed above, solder can be used to connect the external top external reinforcement 460 to the embedded bracket reinforcement 450. In some respects, solder provides a strong mechanical connection (e.g., using solder with a melting point higher than that of conventional BGAs used for connector 430) and provides a robust / direct thermal path from the die back side, through the cover (not illustrated), the top external reinforcement 460, and the embedded bracket reinforcement 450 to an external heatsink (e.g., PCB, external component, dedicated heatsink, etc.).

[0050] Figure 5A and Figure 5B This is a partial cross-sectional view of apparatus 500 according to various aspects of this disclosure. In some aspects, Figure 5A and Figure 5B It is a simplified cross-sectional view of device 500 and in Figure 5A and Figure 5B The details and components of device 500 may be simplified or omitted, especially with Figures 1A to 4 Similar details. In some respects, device 500 may be part of an IC package and / or a larger device (such as a mobile phone).

[0051] like Figure 5AAs shown, in some aspects, device 500 includes: a die 510 coupled to a package substrate 520; an embedded support reinforcement 550; a top external reinforcement 560; and a connector 530. In some aspects, the package substrate 520 may include: a metallization structure 521 disposed within the package substrate 520. The metallization structure may include: a plurality of conductive layers 524, the plurality of conductive layers including metal layers and vias; and a plurality of dielectric layers 522. The embedded support reinforcement 550 may be disposed on the periphery of the metallization structure 521 (or the periphery of the package substrate 520) outside the metallization structure 521, as illustrated. Furthermore, the top external reinforcement 560 may be disposed on top of the embedded support reinforcement 550 and coupled to the embedded support reinforcement 550 via a bonding layer 562. The top external reinforcement 560 may be conductive or non-conductive. Similarly, the bonding layer 562 may be conductive or non-conductive. It should be understood that the top external reinforcement 560 provides further reinforcement to the package substrate 520.

[0052] Figure 5B A more detailed view of the embedded bracket reinforcement 550 and the top external reinforcement 560 is illustrated. To avoid redundancy and clutter in the figures, each of these elements may not be individually identified and / or illustrated. As discussed above, each of the other bracket layers generally includes: a metal layer; a plurality of short posts and vias coupled to the metal layer; and a dielectric layer disposed above the metal layer, short posts, and vias. In some aspects, the embedded bracket reinforcement 550 may include a winding portion 550a comprising a plurality of bracket layers 551a to 551n, which allows for gaps in the bracket posts 555 or portions of the bracket posts, wherein each bracket post 555 (e.g., 555a, 555b, and 555c) includes a vertically aligned metal layer, short post, and via. For example, as illustrated, the embedded support reinforcement 550 has a winding portion 550a, wherein at least one of the plurality of support layers 551 (e.g., 551a, 551b to 551n) has at least one fewer short post and via than the plurality of short posts and vias of the plurality of support layers 551 outside the winding portion 550a. For example, in support layer 551a, the short post and via in support post 555c are removed. In support layer 551b, the short post and via in support post 555a are removed. In support layer 551n, the short post and via in support post 555b and support post 555c are removed. It should be understood that these removed short posts and vias, in conjunction with other removed short posts in the vias of adjacent posts of the embedded support reinforcement 550, can provide an escape path for the winding from the metallized structure 521 through the embedded support reinforcement 550, as will be discussed further below.

[0053] It should be understood that the support layers 551a to 551n of the embedded support reinforcement 550 can be designed as any number of layers and sequentially coupled until the last support layer 551n of the plurality of support layers 551a to 551n is coupled to the base metal layer 556 adjacent to the last support layer 551n. Furthermore, as illustrated, in some aspects, a bonding layer 562 couples the top outer reinforcement 560 to the embedded support reinforcement 550 at the top support layer 551a. In some aspects, the bonding layer 562 can be an adhesive, such as epoxy resin or solder. In some aspects, the top outer reinforcement 560 can be a metal, such as stainless steel. In some aspects, the top outer reinforcement 560 can be another substrate, such as an interposer, PCB, etc.

[0054] It should be understood that, in the various aspects disclosed, the number of support layers 551a to 551n is not limited to a specific number of layers. In some aspects, at least a portion of the top metal layer of the top support layer 551a may be exposed through an opening in the first solder mask layer 526 to allow coupling to the top external reinforcement 560 via the bonding layer 562. In some aspects, the base metal layer 556 may be coupled to the connector 530 through an opening in the second solder mask layer 527 to allow coupling to external components and / or ground potentials, as discussed herein.

[0055] Figure 6 This is a partial cross-sectional view of apparatus 600 according to various aspects of this disclosure. In some aspects, Figure 6 It is a simplified cross-sectional view of device 600 and can be viewed in... Figure 6 The simplified or omitted details and components of device 600, particularly those related to the aforementioned Figures 1A to 5B Similar details. In some respects, device 600 may be part of an IC package and / or a larger device (such as a mobile phone).

[0056] like Figure 6As shown, in some aspects, device 600 includes: a die 610 coupled to a package substrate 620; an embedded support reinforcement 650; a top external reinforcement 660; a bottom external reinforcement 670; and a connector 630. In some aspects, the embedded support reinforcement 650 includes a plurality of support pillars 655 and a plurality of support layers 651. In some aspects, the package substrate 620 may include: a metallization structure 621 disposed in the package substrate 620. The metallization structure 621 may include: a plurality of conductive layers 624, the plurality of conductive layers including metal layers and vias; and a plurality of dielectric layers 622. The embedded support reinforcement 650 may be disposed on the periphery of the metallization structure 621 outside the metallization structure 621 (or on the periphery of the package substrate 620), as illustrated. Furthermore, the top external reinforcement 660 may be disposed on top of the embedded support reinforcement 650 and coupled to the embedded support reinforcement 650 via a bonding layer 662. The top external reinforcement 660 may be conductive or non-conductive. Additionally, the bonding layer 662 may be conductive or non-conductive. It should be understood that the top external reinforcement 660 provides further reinforcement to the package substrate 620. Similarly, the bottom external reinforcement 670 disposed on the back side of the package substrate 620 may provide even further reinforcement / warping prevention for the package substrate 620. In some aspects, the bottom external reinforcement 670 may be used without the top external reinforcement 660. In some aspects, the bottom external reinforcement 670 may extend to cover substantially the same peripheral area as the embedded support reinforcement 650. In some aspects, the bottom external reinforcement 670 may cover only a portion of the embedded support reinforcement 650 to further reinforce areas requiring additional support, such as wire portions with reduced support column strength, portions without the top external reinforcement 660, and / or areas in the package substrate 620 where stress may concentrate. It should be understood that the bottom external reinforcement 670 is thinner than the connector 630 (e.g., the height of a BGA ball pitch, the height of an LGA socket pin, or the height of a PGA package pin), i.e., has a smaller height, to prevent interference with the connection to external components. In some aspects, the bottom external reinforcement 670 may be conductive or non-conductive. In some aspects, the bottom external reinforcement 670 may be formed of a metal such as stainless steel. In some aspects, the bottom external reinforcement 670 may be coupled to the embedded bracket reinforcement 650 through multiple openings, or through a large opening in the solder mask. In some aspects, a polymer or solder material may be used to couple the bottom external reinforcement 670 to the embedded bracket reinforcement 650.

[0057] Figure 7 This is a partial cross-sectional view of apparatus 700 according to various aspects of this disclosure. In some aspects, Figure 7 It is a simplified cross-sectional view of device 700 and can be viewed in... Figure 7The simplified or omitted details and components of device 700, particularly those related to the aforementioned Figures 1A to 6 Similar details. In some respects, device 700 may be part of an IC package and / or a larger device (such as a mobile phone).

[0058] Figure 7 A more detailed view of the embedded bracket reinforcement 750 and the top external reinforcement 760 of the device 700 is shown. To avoid redundancy and clutter in the figures, each of the aforementioned introduced elements is not individually identified and / or illustrated. In some aspects, the same dielectric layer in the package substrate 720 is used in the embedded bracket reinforcement 750. In some aspects, the embedded bracket reinforcement 750 includes a plurality of bracket posts 755 and a plurality of bracket layers 751. It should be understood that the metallization structure (not illustrated) is formed using the same material as the embedded bracket reinforcement 750. As discussed above, each of the plurality of bracket layers 751 generally includes: a metal layer; a plurality of short posts coupled to the metal layer; and a dielectric layer disposed above the metal layer, as well as the short posts and vias, to couple the short posts to adjacent metal layers via the dielectric layer 722. In some aspects, the embedded support reinforcement 750 may include a plurality of support layers 751 (e.g., 751a, 751b...751n), wherein a first subset 751x of the plurality of support layers 751 includes a first metal and a second subset 751y of the plurality of support layers includes a second metal. For example, the first metal may be copper and the second metal may be molybdenum. However, it should be understood that the various aspects disclosed and claimed herein are not limited to these examples and any highly conductive metal, alloy, and combination thereof may be used. It should be understood that employing two metals with different properties can improve the coefficient of thermal expansion (CTE) in the package substrate 720 and device 700, which will improve warpage reduction over a wider temperature range. As illustrated, each support post (755a, 755b, and 755c) includes vertically aligned metal layers, short posts, and vias, and therefore each support post (755a, 755b, and 755c) will be formed of both the first metal and the second metal. Additionally, the various aspects are not limited to the illustrated configuration and alternative configurations may include different combinations of metal layers (e.g., copper, molybdenum, copper), such that molybdenum is located at the center of two copper layers. Furthermore, the various aspects may include more than two different metals.

[0059] It should be understood that the support layers 751a to 751n of the embedded support reinforcement 750 can be designed as any number of layers and sequentially coupled until the last support layer 751n of the plurality of support layers 751a to 751n is coupled to the base metal layer 756 adjacent to the last support layer 751n. In some aspects, the base metal layer 756 may include a second metal. In some aspects, the base metal layer 756 may include a first metal. Furthermore, as illustrated, in some aspects, the bonding layer 762 couples the top outer reinforcement 760 to the embedded support reinforcement 750 at the top support layer 751a through an opening in the solder mask layer 726. In some aspects, the bonding layer 762 may be an adhesive, such as epoxy resin or solder. In some aspects, the top outer reinforcement 760 may be a metal, such as stainless steel. In some aspects, the top outer reinforcement 760 may be another substrate, such as an interposer, PCB, etc. In some respects, the base metal layer 756 may be coupled to the connector 730 through an opening in the second solder mask layer 727 to allow coupling to external components and / or ground potentials, as discussed herein.

[0060] Figure 8 This is a partial cross-sectional view of the apparatus 800 according to various aspects of this disclosure. In some aspects, Figure 8 This is a simplified cross-sectional view of device 800 and can be viewed in... Figure 8 The simplified or omitted details and components of device 800, particularly those related to the aforementioned Figures 1A to 7 Similar details. In some respects, device 800 may be part of an IC package and / or a larger device (such as a mobile phone).

[0061] like Figure 8As shown, in some aspects, device 800 includes: a die 810 coupled to a package substrate 820; embedded bracket reinforcements 850a and 850b; a top external reinforcement 860; a substrate core 840; and a connector 830. In some aspects, embedded bracket reinforcements 850a and 850b may be part of the package substrate 820. In some aspects, the package substrate 820 may include: metallization structures 821a and 821b disposed within the package substrate 820. Metallization structures 821a and 821b may include: a plurality of conductive layers 824a and 824b, the conductive layers including metal layers and vias; and a plurality of dielectric layers 822a and 822b. Embedded bracket reinforcements 850a and 850b may be disposed on the periphery of the packaging substrate 820 outside the metallized structures 821a and 821b, as illustrated. Furthermore, a top external reinforcement 860 may be disposed on top of the embedded bracket reinforcement 850a and coupled to the embedded bracket reinforcement 850a via a bonding layer 862. The top external reinforcement 860 may be conductive or non-conductive. Additionally, the bonding layer 862 may be conductive or non-conductive. In some aspects, the embedded bracket reinforcement includes a top embedded bracket reinforcement 850a disposed on the top side of the substrate core 840; and a bottom embedded bracket reinforcement 850b disposed on the bottom side of the substrate core 840. In some aspects, the substrate core is a glass core or a glass fiber reinforced core material. In some aspects, the core support (which may include multiple core supports (e.g., 842, 844, 846)) is configured to couple (thermally and / or mechanically) the top embedded core reinforcement 850a and the bottom embedded core reinforcement 850b. It should be understood that in some aspects providing both thermal and mechanical coupling, a heat conduction path is provided through the package substrate 820 including the core 840, along with the transmission of any load / stress, which increases the rigidity of the package substrate and reduces warpage. In some aspects, the core support may include at least one of the following: embedded rods 842, plated through-holes (PTH) 844 (which may be blocked, blocked and copper-covered, or copper-filled), double-sided laser-drilled (DSLD) vias 846, or combinations thereof. In some aspects, the core support is formed by a plurality of embedded rods 842, plated through-holes (PTH) 844, or double-sided laser-drilled (DSLD) vias 846 disposed around the periphery of the package substrate 820.

[0062] Figure 9 These are partial plan views and partial cross-sectional views of the apparatus 900 according to various aspects of this disclosure. In some aspects, Figure 9 It is a simplified cross-sectional view of device 900 and can be viewed in... Figure 9 The simplified or omitted details and components of device 900, particularly those related to the aforementioned Figures 1A to 8 Similar details. In some respects, device 900 may be part of an IC package and / or a larger device (such as a mobile phone).

[0063] Figure 9 A partial plan view of the embedded support reinforcement 950 of the package substrate 920 of device 900 is illustrated, which may be similar to other devices discussed herein. In some aspects, the embedded support reinforcement 950 includes a plurality of support layers 951 (which may be any number from 1 to n, as discussed above). Furthermore, as discussed above, each of the plurality of support layers includes: a metal layer 952; a plurality of short pillars 953 coupled to the metal layer 952; and a dielectric layer 922 disposed above the metal layer and the plurality of short pillars 953. A plurality of vias 954 are coupled to the plurality of short pillars 953 and the adjacent metal layer 952 of the embedded support reinforcement 950. Vertically aligned short pillars 953 and vias 954 in each layer form a plurality of support pillars 955. To avoid redundancy and clutter in the figures, each of these elements may not be individually identified and / or illustrated. It should be understood that the support layers 951 of the embedded support reinforcement 950 can be designed as any number of layers and sequentially coupled until the last support layer of the plurality of support layers 951 is coupled to the base metal layer 956 adjacent to the last support layer. Furthermore, as illustrated, in some aspects, the embedded support reinforcement 950 is configured as a ring surrounding all sides of the periphery of the package substrate 920. In some aspects, the support posts 955 can be configured in a grid pattern within the ring, as illustrated. However, it should be understood that the various aspects disclosed and claimed herein are not limited to the examples illustrated herein. For example, in some aspects, the embedded support reinforcement 950 can have portions of different widths and different numbers of support posts 955. Furthermore, the support posts 955 can have different patterns (e.g., circular patterns, diagonal patterns, random patterns, etc.), different sizes, and / or shapes. Therefore, in some aspects, the short posts 953 and through holes 954 forming the support posts 955 may have different dimensions (e.g., different diameters, lengths, widths, and / or heights) and / or different shapes (e.g., circular, elliptical, rectangular, square, conical, etc.). Additionally, the various support layers may include a common material or may include different materials. The following paragraphs will provide additional non-limiting examples.

[0064] Figure 10 These are partial plan views and partial cross-sectional views of the apparatus 1000 according to various aspects of this disclosure. In some aspects, Figure 10 It is a simplified cross-sectional view of device 1000 and can be viewed in... Figure 10The simplified or omitted details and components of the device 1000, particularly those related to the aforementioned Figures 1A to 9 Similar details. In some respects, device 1000 may be part of an IC package and / or a larger device (such as a mobile phone).

[0065] Figure 10 A partial plan view of an embedded support reinforcement 1050 of a package substrate 1020 of device 1000 is illustrated, which may be similar to other devices discussed herein. In some aspects, the embedded support reinforcement 1050 includes a plurality of support layers 1051. Furthermore, as discussed above, each of the plurality of support layers 1051 includes: a metal layer 1052; a plurality of short pillars 1053 coupled to the metal layer 1052; and a dielectric layer 1022 disposed above the metal layer and the plurality of short pillars 1053. A plurality of vias 1054 are coupled to the plurality of short pillars 1053 and adjacent metal layers 1052 of the embedded support reinforcement 1050. Vertically aligned short pillars 1053 and vias 1054 in each layer form a plurality of support pillars 1055. To avoid redundancy and clutter in the figures, each of these elements is not individually identified. In some aspects, the same dielectric layer 1022 in the package substrate 1020 is used in the embedded support reinforcement 1050. It should be understood that the support layers 1051 of the embedded support reinforcement 1050 can be designed as any number of layers and sequentially coupled until the last support layer of the plurality of support layers 1051 is coupled to the base metal layer 1056 adjacent to the last support layer. Furthermore, as illustrated, in some aspects, the embedded support reinforcement 1050 is configured as a ring surrounding all sides of the periphery of the package substrate 1020 and also includes at least one internal channel disposed between opposite sides of the ring (in the illustrated example, two channels are illustrated, each channel being orthogonal to the other, forming a cross shape within the ring). In some aspects, the support posts 1055 can be configured as a grid pattern, as illustrated. However, it should be understood that the various aspects disclosed and claimed herein are not limited to the illustrated examples provided herein.

[0066] Figure 11 These are partial plan views and partial cross-sectional views of the apparatus 1100 according to various aspects of this disclosure. In some aspects, Figure 11 It is a simplified cross-sectional view of device 1100 and can be viewed in... Figure 11 The simplified or omitted details and components of the device 1100, particularly those related to the aforementioned Figures 1A to 10 Similar details. In some respects, device 1100 may be part of an IC package and / or a larger device (such as a mobile phone).

[0067] Figure 11A partial plan view of the embedded support reinforcement 1150 of the package substrate 1120 of device 1100 is illustrated, which may be similar to other devices discussed herein. In some aspects, the embedded support reinforcement 1150 includes a plurality of support layers 1151. Furthermore, as discussed above, each of the plurality of support layers 1151 includes: a metal layer 1152; a plurality of short pillars 1153 coupled to the metal layer 1152; and a dielectric layer 1122 disposed above the metal layer 1152 and the plurality of short pillars 1153. A plurality of vias 1154 are coupled to the plurality of short pillars 1153 and adjacent metal layers 1152 of the embedded support reinforcement 1150. Vertically aligned short pillars 1153 and vias 1154 in each layer form a plurality of support pillars 1155. To avoid redundancy and clutter in the figures, each of these elements may not be individually identified and / or illustrated. It should be understood that the support layers 1151 of the embedded support reinforcement 1150 can be designed as any number of layers and sequentially coupled until the last support layer of the plurality of support layers 1151 is coupled to the base metal layer 1156 adjacent to the last support layer. Furthermore, as illustrated, in some aspects, the embedded support reinforcement 1150 is configured as a ring surrounding all sides of the periphery of the package substrate 1120, wherein at least one winding portion 1150b has a reduced number of short posts and vias compared to a portion 1150a in the ring that has no openings. It should be understood that, depending on various design parameters, the openings formed by the short posts and vias omitted in the winding portion can be staggered on the various support layers 1151 and in the various support posts 1155. It should be understood that having one or more winding portions 1150b allows for increased winding flexibility while still maintaining increased stiffness, which reduces warpage of the package substrate 1120. In some aspects, the support post 1155 may be configured in a grid pattern within the ring, and the winding portion 1150b may be configured to allow the winding path to be at an angle to the grid pattern of the support post 1155, as illustrated. However, it should be understood that the various aspects disclosed and claimed herein are not limited to the illustrative examples provided herein.

[0068] To fully illustrate the various aspects of this disclosure, manufacturing methods are proposed. Furthermore, many details of the manufacturing processes known to those skilled in the art may be omitted or combined in the various overview process sections to facilitate understanding of the disclosed aspects without presenting every detail and / or all possible process variations in detail. Other manufacturing methods are also possible, and the manufacturing methods discussed are only for the purpose of aiding in understanding the concepts disclosed herein.

[0069] Figures 12A to 12HStructures of the manufacturing / fabricating apparatus 1200 at various stages according to various aspects of this disclosure are illustrated (such as the example apparatuses 100 to 1100 discussed above as non-limiting examples). Figures 12A to 12H Many of the elements illustrated herein are the same as or similar to those discussed above and illustrated in the accompanying drawings, and therefore their detailed descriptions may be omitted.

[0070] like Figure 12A As shown, the manufacturing process of device 1200 may begin by providing a temporary carrier 1201 having a copper foil applied to a first surface. A first dry film resist (DFR) may be deposited, exposed, developed, and electroplated to pattern and form a first metal layer 1252a (e.g., an M1 copper layer). In some aspects, the first metal layer 1252a forms part of the embedded support reinforcement 1250 and the metallized structure 1221.

[0071] exist Figure 12B In this process, the manufacturing process of device 1200 can continue, wherein the temporary carrier 1201 has an attached first metal layer 1252a. In some aspects, the manufacturing process can continue further, wherein the first DFR is stripped, a second DFR is deposited and patterned, and then a first short post 1253a is formed in the M1.5 layer using an electroplating process. In some aspects, the first metal layer 1252a and the first short post 1253a form part of the embedded support reinforcement 1250.

[0072] exist Figure 12C In this process, the manufacturing process of device 1200 can continue, wherein the temporary carrier 1201 has an attached first metal layer 1252a and a first short post 1253a. In some aspects, the manufacturing process can continue further, wherein a dielectric 1222 is deposited / laminated over the first metal layer 1252a and the first short post 1253a. In some aspects, the first metal layer 1252a, the first short post 1253a, and the dielectric 1222 form part of the embedded support reinforcement 1250 and the metallized structure 1221. In some aspects, the dielectric 1222 may comprise resin-impregnated glass fiber (prepreg), Ajinomoto laminate (ABF), other laminates, or any similar material.

[0073] exist Figure 12D In this process, the fabrication of device 1200 can continue, wherein the temporary carrier 1201 has an attached first metal layer 1252a, a first short post 1253a, and a dielectric 1222. In some aspects, the fabrication process can continue further, wherein an opening 1202 is formed in the dielectric 1222 to allow access to the first short post 1253a. In some aspects, the opening 1202 can be formed by laser drilling through the dielectric 1222.

[0074] exist Figure 12E In this process, the fabrication of device 1200 can continue, wherein the temporary carrier 1201 has an attached first metal layer 1252a, a first short post 1253a, and a dielectric 1222. In some aspects, the fabrication process can continue further, wherein the opening in the dielectric 1222 is filled with a conductive material (e.g., copper) to form a first via 1254a coupled to the first short post 1253a. A second metal layer 1252b is further deposited and patterned. In some aspects, the first metal layer 1252a, the first short post 1253a, the first via 1254a, the second metal layer 1252b, and the dielectric 1222 can form part of the embedded support reinforcement 1250 and the metallized structure 1221.

[0075] exist Figure 12F In this process, the manufacturing process of device 1200 can continue, wherein the temporary carrier 1201 has an attached first metal layer 1252a, a first short post 1253a, a first via 1254a, a second metal layer 1252b, and a dielectric 1222. In some aspects, the manufacturing process can continue further, wherein processes 12B to 12E are repeated to form a plurality of support layers 1251 (e.g., 1251a, 1251b to 1251n) until all metal layers are formed and patterned, including the base metal layer 1256 of both the embedded support reinforcement 1250 of the package substrate 1220 and the metallized structure 1221. Additionally, the embedded support reinforcement 1250 has a plurality of support posts 1255 formed by vertically aligned short posts and vias.

[0076] exist Figure 12G During this process, the manufacturing process of device 1200 can continue, wherein the encapsulation substrate is removed from temporary carrier 1201 (e.g., demounted from temporary carrier). First solder resist (SR) 1226 and second solder resist (SR) 1227 are deposited and processed to form openings 1206 and 1207, respectively, in desired portions of the first SR 1226 and second SR 1227. At this stage, the encapsulation substrate 1220 has the formed first SR 1226, second SR 1227, multiple support layers 1251 and multiple support pillars 1255 of the embedded support reinforcement 1250, and a metallization structure 1221.

[0077] exist Figure 12HIn this process, the fabrication of device 1200 can continue, wherein die 1210 is attached and electrically coupled to the metallization structure 1221 of package substrate 1220. Connector 1230 (e.g., solder ball) is attached to metallization structure 1221 and embedded bracket reinforcement 1250. Embedded bracket reinforcement 1250 includes multiple bracket layers 1251 and multiple bracket posts 1255. Optionally, top external reinforcement 1260 may be disposed on top of embedded bracket reinforcement 1250 and coupled to embedded bracket reinforcement 1250 via bonding layer 1262.

[0078] It should be understood that known techniques can be used to perform additional processing to form and / or attach additional structures (e.g., covers, PCBs, additional dies, SMT assemblies, etc.). Therefore, it should be understood that the various aspects disclosed in this invention are not limited to the specific configurations illustrated in the drawings.

[0079] It should be understood that the foregoing manufacturing processes are provided only as general examples of some aspects of this disclosure and are not intended to limit this disclosure or the appended claims. Furthermore, many details of the manufacturing processes known to those skilled in the art may be omitted or combined in the various overview process sections to facilitate an understanding of the various aspects disclosed without presenting every detail and / or all possible process variations in detail.

[0080] In some aspects, the disclosed various top external reinforcements (e.g., 260, 360) may have a height ranging from 1 mm to 3 mm. In some aspects, the height of the disclosed various vias (e.g., 154, 254, etc.) may range from 10 micrometers to 50 micrometers (µm), and the diameter of the disclosed vias (e.g., 154, 254, etc.) and short posts (e.g., 153, 254, etc.) may range from 50 micrometers to 100 micrometers (µm). In some aspects, the diameters of the vias and short posts may vary, for example, a larger diameter may appear in one or more support posts (e.g., central support post, external support post, etc.). In some aspects, the number of disclosed support posts (e.g., 155, 255, etc.) may range from 2 to 5.

[0081] It should be understood that various metal layers (e.g., 152, etc.) and other metal structures (e.g., vias (e.g., 154, etc.), short pillars (e.g., 153, etc.)) may comprise any highly conductive material, such as copper (Cu), aluminum (Al), silver (Ag), gold (Au), titanium (Ti), nickel (Ni), molybdenum, alloys, or combinations thereof. Furthermore, it should be understood that various dielectric layers (e.g., 122, 222, etc.) may comprise resin-impregnated glass fiber (prepreg), Ajinomoto additive film (ABF), photosensitive dielectric materials, or other additive films, or any similar materials. Therefore, it should be understood that the various aspects disclosed and claimed herein are not limited to the various example configurations and materials provided herein.

[0082] Figure 13 A method 1300 illustrating an apparatus for manufacturing / fabricating a substrate having embedded support reinforcements according to various aspects of this disclosure (e.g., any of example apparatuses 100 to 1200) is shown. In some aspects, Figures 12A to 12H The substrate at different manufacturing stages according to method 1300 can be depicted. As can be understood from the above, there are various methods for manufacturing a substrate including an apparatus having an embedded support reinforcement as disclosed herein.

[0083] At operation 1310, the process includes: forming a metallization structure disposed in a package substrate (e.g., 120, 220, 320, 420, 520, 620, 720, 820, 920, 1020, 1120, or 1220), wherein the metallization structure (e.g., metallization structure 121, 221, 321, etc.) includes multiple conductive layers (e.g., conductive layers 124, 224, 324, etc.) and multiple dielectric layers (e.g., dielectric layers 122, 222, 322, etc.).

[0084] At operation 1320, the process includes: forming an embedded support reinforcement (e.g., 150, 250, 350, 450, 550, 650, 750, 850a, 850b, 950, 1050, 1150, or 1250) disposed on the periphery of a metallized structure outside a metallized structure (e.g., metallized structures 121, 221, 321, etc.), which may be the periphery of a packaging substrate (e.g., packaging substrates 120, 220, 320, 420, 520, 620, 720, 820, 920, 1020, 1120, 1220)), wherein the embedded support reinforcement includes a plurality of support pillars (e.g., support pillars 155, 255, 355, etc.) and a plurality of vertically stacked support layers (e.g., support layers 151, 251, 351, etc.), each support layer being formed by operations 1330 to 1360. In various respects, it should be understood that the formation of the metallized structure (operation 1310) and the formation of the embedded support reinforcement (operation 1320) are performed in parallel during the manufacture of each layer.

[0085] At operation 1330, the process includes forming a metal layer (e.g., metal layer 152).

[0086] At operation 1340, the process includes forming a plurality of short pillars (e.g., short pillar 153) that are coupled to a metal layer (e.g., metal layer 152).

[0087] At operation 1350, the process includes depositing a dielectric layer (e.g., dielectric layer 122) over a metal layer (e.g., metal layer 152) and a plurality of short pillars (e.g., short pillars 153).

[0088] At operation 1350, the process includes forming a plurality of vias (e.g., 154) configured to pass through a dielectric layer (e.g., dielectric layer 122) above a metal layer (e.g., 152) and a plurality of short pillars (e.g., short pillar 153).

[0089] It should be understood that the foregoing manufacturing processes are provided only as general examples of some aspects of this disclosure and are not intended to limit this disclosure or the appended claims. Furthermore, many details of the manufacturing processes known to those skilled in the art may be omitted or combined in the various overview process sections to facilitate an understanding of the various aspects disclosed without presenting every detail and / or all possible process variations in detail.

[0090] Figure 14 A mobile device 1400 according to various aspects of this disclosure is illustrated. In some aspects, the mobile device 1400 may be implemented by including one or more IC devices, which include a hybrid substrate with embedded components as disclosed herein.

[0091] In some aspects, the mobile device 1400 can be configured as a wireless communication device. As shown, the mobile device 1400 includes a processor 1401. The processor 1401 is communicatively coupled to a memory 1432 via a link, which may be a die-to-die or chip-to-chip link. The mobile device 1400 also includes a display 1428 and a display controller 1426, wherein the display controller 1426 is coupled to the processor 1401 and the display 1428. The mobile device 1400 may include an input device 1430 (e.g., a physical or virtual keyboard), a power supply 1444 (e.g., a battery), a speaker 1436, a microphone 1438, and a wireless antenna 1442. In some aspects, the power supply 1444 may directly or indirectly provide power voltages for some or all of the components of the mobile device 1400.

[0092] In some respects, Figure 14 It may include a decoder / decoder (codec) 1434 (e.g., an audio and / or voice codec) coupled to the processor 1401; a speaker 1436 and a microphone 1438 coupled to the codec 1434; and a wireless circuit 1440 (which may include a modem, RF circuitry, filters, etc.) coupled to the wireless antenna 1442 and coupled to the processor 1401.

[0093] In some aspects, one or more of the processor 1401 (e.g., SoC, application processor (AP), central processing unit (CPU), digital signal processor (DSP), etc.), display controller 1426, memory 1432, codec 1434, and wireless circuit 1440 (e.g., baseband interface) include an IC device packaged as an IC package and include a substrate having embedded support reinforcements with various aspects described in this disclosure.

[0094] It should be pointed out that, although Figure 14 Mobile device 1400 is described, but similar architectures can be used to implement devices including microprocessors, servers, set-top boxes, music players, video players, entertainment units, navigation devices, personal digital assistants (PDAs), fixed-location data units, computers, laptops, tablets, communication devices, mobile phones, or other similar devices.

[0095] Figure 15Examples of various electronic devices that may integrate any of the following: the aforementioned devices, semiconductor devices, integrated circuit (IC) packages, integrated circuit (IC) devices, electronic components, interposer packages, stacked package (PoP), system-in-package (SiP), or system-on-a-chip (SoC). For example, mobile phone device 1502, laptop computer device 1504, fixed-location terminal device 1506, wearable device 1508, or motor vehicle 1510 may include semiconductor device 1500 as described herein (e.g., including embedded bracket reinforcement). Figure 15 The illustrated devices 1502, 1504, 1506, and 1508, as well as vehicle 1510, are merely exemplary. Other devices or apparatuses may also feature semiconductor device 1500, including but not limited to devices comprising the following group: mobile devices, handheld personal communication system (PCS) units, portable data units (such as personal digital assistants), GPS-enabled devices, navigation devices, set-top boxes, music players, video players, entertainment units, fixed location data units (such as meter reading devices), communication devices, smartphones, tablet computers, computers, wearable devices (e.g., watches, glasses), Internet of Things (IoT) devices, servers, routers, electronic devices implemented in motor vehicles (e.g., autonomous vehicles), or any other device or any combination thereof that stores or retrieves data or computer instructions.

[0096] Figure 15 The devices illustrated herein are merely non-limiting examples. Other electronic devices may also feature semiconductor devices as described in this disclosure, including, but not limited to, devices comprising the group consisting of: mobile devices, handheld personal communication system (PCS) units, portable data units (such as personal digital assistants), GPS-enabled devices, navigation devices, set-top boxes, music players, video players, entertainment units, fixed-location data units (such as instrument reading devices), communication devices, smartphones, tablet computers, computers, wearable devices, servers, routers, electronic devices implemented in motor vehicles (e.g., autonomous vehicles), Internet of Things (IoT) devices, access points, base stations, or any other device or any combination thereof that stores or retrieves data or computer instructions.

[0097] It should be understood that the various aspects disclosed herein can be described as functional equivalents of structures, materials, and / or devices as described and / or understood by those skilled in the art. For example, in one aspect, the apparatus may include components for performing the various functions discussed above. It should be understood that the foregoing aspects are provided by way of example only, and the claimed aspects are not limited to the specific references and / or illustrations cited as examples.

[0098] Figures 1A to 15 One or more of the components, processes, features, and / or functions illustrated herein may be rearranged and / or combined into a single component, process, feature, or function, or incorporated into several components, processes, or functions. Additional elements, components, processes, and / or functions may also be added without departing from this disclosure. In some specific embodiments, Figures 1A to 15 The corresponding descriptions can be used to manufacture, create, supply, and / or produce integrated devices. In some specific implementations, the equipment may include dies, integrated devices, die packages, ICs, device packages, IC packages, wafers, semiconductor devices, system-in-package (SiP), system-on-a-chip (SoC), and stacked package (PoP) devices, etc.

[0099] As can be seen in the detailed description above, different features are grouped together in the examples. This manner of disclosure should not be construed as an intention to have more features than those explicitly mentioned in each clause. Rather, the various aspects of this disclosure may include fewer features than those in the individual example clauses disclosed. Therefore, the following clauses should be regarded accordingly as incorporated into the description, where each clause may serve as a separate example. Although each dependent clause may refer in the clause to a specific combination with one of the other clauses, the aspect of that dependent clause is not limited to that specific combination. It should be understood that other example clauses may also include combinations of aspects of a dependent clause with the subject matter of any other dependent or independent clause, or combinations of any feature with other dependent and independent clauses. The various aspects disclosed herein explicitly include these combinations unless explicitly stated or readily inferred that a particular combination is not intended for use (e.g., contradictory aspects, such as defining an element as both an electrical insulator and an electrical conductor). Furthermore, it is contemplated that aspects of a clause may be included in any other independent clause, even if that clause does not directly depend on the independent clause.

[0100] Specific implementation examples are described in the following numbered clauses:

[0101] Clause 1. An apparatus comprising: a metallization structure disposed in a package substrate, wherein the metallization structure includes a plurality of conductive layers and a plurality of dielectric layers; and an embedded bracket reinforcement disposed on the periphery of the metallization structure outside the metallization structure, wherein the embedded bracket reinforcement includes a plurality of bracket posts and a plurality of vertically stacked bracket layers, each bracket layer including: a metal layer; a plurality of short posts coupled to the metal layer; a dielectric layer disposed above the metal layer and the plurality of short posts; and a plurality of vias configured to pass through the dielectric layer and coupled to the plurality of short posts, wherein the plurality of bracket posts includes vertically aligned short posts and vias coupled to the metal layer in each of the plurality of bracket layers.

[0102] Clause 2. The apparatus according to Clause 1, wherein each of the plurality of vias is coupled to a next metal layer of the next support layer of the plurality of support layers, or coupled to a base metal layer adjacent to the last support layer of the plurality of support layers.

[0103] Clause 3. The device according to any one of Clauses 1 to 2, the device further comprising: a top external reinforcement, the top external reinforcement being coupled to the embedded bracket reinforcement via a bonding layer.

[0104] Clause 4. The apparatus according to Clause 3, wherein the bonding layer comprises an adhesive or solder.

[0105] Clause 5. The device according to Clause 4, wherein the top external reinforcement comprises metal or another substrate.

[0106] Clause 6. The device according to any one of Clauses 3 to 5, the device further comprising: a cover coupled to the top external reinforcement.

[0107] Clause 7. The apparatus according to Clause 6, wherein the top external reinforcement comprises: a first portion perpendicularly aligned with the embedded support reinforcement; and a second portion extending over the metallized structure of the package substrate.

[0108] Clause 8. The device according to Clause 7, wherein the bonding layer extends at least partially beneath the second portion.

[0109] Clause 9. The apparatus according to Clause 8, wherein the bonding layer comprises: a conductive portion disposed between the embedded support reinforcement and the first portion of the top external reinforcement; and an adhesive portion disposed at least partially below the second portion.

[0110] Clause 10. The apparatus according to any one of Clauses 1 to 9, wherein the embedded support reinforcement comprises a plurality of winding portions, wherein in each winding portion, at least one of the plurality of support layers has at least one fewer short post and through hole than the plurality of short posts and through holes of the plurality of support layers outside each winding portion.

[0111] Clause 11. The apparatus according to any one of Clauses 1 to 10, the apparatus further comprising: a bottom external reinforcement disposed on the back side of the package substrate adjacent to the embedded support reinforcement.

[0112] Clause 12. The apparatus according to any one of Clauses 1 to 11, wherein the packaging substrate further comprises: a substrate core.

[0113] Clause 13. The apparatus according to Clause 12, wherein the embedded bracket reinforcement further comprises: a top embedded bracket reinforcement disposed on a top side of the substrate core; a bottom embedded bracket reinforcement disposed on a bottom side of the substrate core; and a bracket core support configured to couple the top embedded bracket reinforcement and the bottom embedded bracket reinforcement.

[0114] Clause 14. The device according to Clause 13, wherein the bracket core support is at least one of the following: an embedded rod; a plated through-hole (PTH); a double-sided laser-drilled (DSLD) through-hole; or a combination thereof.

[0115] Clause 15. The apparatus according to any one of Clauses 1 to 14, wherein: the embedded support reinforcement is a ring surrounding all sides of the periphery of the metallized structure, the embedded support reinforcement comprising a ring surrounding all sides of the periphery of the metallized structure and at least one internal channel disposed between opposite sides of the ring, the embedded support reinforcement comprising a ring surrounding all sides of the periphery of the metallized structure, wherein at least one winding portion has a reduced number of short posts and through holes, or the embedded support reinforcement comprising a ring surrounding only a portion of the periphery of the metallized structure.

[0116] Clause 16. The apparatus according to any one of Clauses 1 to 15, the apparatus further comprising: a die disposed on a top surface of the package substrate and electrically coupled to the metallization structure of the package substrate; and a plurality of connectors disposed on a bottom surface of the package substrate and electrically coupled to the embedded support reinforcement and the metallization structure of the package substrate.

[0117] Clause 17. The device according to any one of Clauses 1 to 16, wherein the device comprises at least one of: a music player, a video player, an entertainment unit; a navigation device, a communication device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed-location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an Internet of Things (IoT) device, or a device in a motor vehicle.

[0118] Clause 18. A method of manufacturing an apparatus, the method comprising: forming a metallized structure disposed in a package substrate, wherein the metallized structure includes a plurality of conductive layers and a plurality of dielectric layers; and forming an embedded support reinforcement disposed on the periphery of the metallized structure outside the metallized structure, wherein the embedded support reinforcement includes a plurality of support pillars and a plurality of vertically stacked support layers, each support layer being formed by: forming a metal layer; forming a plurality of short pillars coupled to the metal layer; depositing a dielectric layer over the metal layer and the plurality of short pillars; and forming a plurality of vias configured to pass through the dielectric layer and coupled to the plurality of short pillars, wherein the plurality of support pillars includes vertically aligned short pillars and vias coupled to the metal layer in each of the plurality of support layers.

[0119] Clause 19. The method according to Clause 18, the method further comprising: forming a top external reinforcement, the top external reinforcement being coupled to an embedded bracket reinforcement via a bonding layer.

[0120] Clause 20. The method according to any one of Clauses 18 to 19, wherein: the embedded support reinforcement is a ring surrounding all sides of the periphery of the package substrate, the embedded support reinforcement including a ring surrounding all sides of the periphery of the package substrate and at least one internal channel disposed between opposite sides of the ring, the embedded support reinforcement including a ring surrounding all sides of the periphery of the package substrate, wherein at least one winding portion has a reduced number of short posts and vias, or the embedded support reinforcement including a ring surrounding only a portion of the periphery of the package substrate.

[0121] Those skilled in the art will understand that information and signals can be represented using any of a variety of different techniques and arts. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0122] Furthermore, those skilled in the art will understand that the various exemplary logic blocks, modules, circuits, and algorithmic steps described in connection with the aspects disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, various exemplary components, blocks, modules, circuits, and steps have been described above in general terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such specific implementation decisions should not be construed as departing from the scope of this disclosure.

[0123] The various exemplary logic blocks, modules, and circuits described in conjunction with the aspects disclosed herein can be implemented or executed using a general-purpose processor, DSP, ASIC, FPGA, or other programmable logic device, discrete gate or transistor logic unit, discrete hardware component, or any combination thereof designed to perform the functions described herein. The general-purpose processor may be a microprocessor, but in alternative embodiments, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors combined with a DSP core, or any other such configuration.

[0124] The methods, sequences, and / or algorithms described in conjunction with the aspects disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or a combination of both. The software module may reside in random access memory (RAM), flash memory, read-only memory (ROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), registers, hard disks, removable disks, CD-ROMs, or any other form of storage medium known in the art. Example storage media are coupled to a processor such that the processor can read information from and write information to the storage medium. Alternatively, the storage medium may be integral with the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal (e.g., a UE). Alternatively, the processor and storage medium may reside as discrete components in the user terminal.

[0125] In one or more examples, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software, the functionality may be stored as one or more instructions or code on or transmitted via a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, which includes any medium that facilitates the transfer of a computer program from one place to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such computer-readable media may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store the desired program code in the form of instructions or data structures and is accessible to a computer. Furthermore, any connection is appropriately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included within the definition of a medium. As used herein, disks and optical discs include: compact optical discs (CDs), laser discs, optical discs, digital versatile discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while optical discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0126] Furthermore, as used herein, the terms “set,” “group,” etc., are intended to include one or more of the stated elements. Additionally, as used herein, the terms “having,” “comprising,” “including,” etc., do not exclude the presence of one or more additional elements (e.g., element “having” A may also have B). Furthermore, the phrase “based on” is intended to mean “at least partially based on” unless otherwise explicitly stated. Moreover, as used herein, the term “or” is intended to be open-ended when used in a series and may be used interchangeably with “and / or” unless otherwise explicitly stated (e.g., if used in conjunction with “any” or “only one”), or these alternatives are mutually exclusive (e.g., “one or more” should not be interpreted as “one and more”). Furthermore, although components, functions, actions, and instructions may be described or claimed in the singular form, the plural form may also be considered unless explicitly stated to be limited to the singular. Therefore, as used herein, the articles “a,” “an,” “the,” and “described” are intended to include one or more of the stated elements. Additionally, as used herein, the terms “at least one” and “one or more” include performing or being able to perform “one” component, function, action or instruction of the described or claimed functionality, and also include performing or being able to perform “two or more” components, functions, actions or instructions of the described or claimed functionality in combination.

[0127] While the foregoing disclosure illustrates exemplary aspects of this disclosure, it should be noted that various changes and modifications may be made herein without departing from the scope of this disclosure as defined by the appended claims. For example, the functions, steps, and / or actions of the method claims according to the aspects of this disclosure described herein need not be performed in any particular order. Furthermore, no component, function, action, or instruction described or claimed herein should be construed as critical or essential unless explicitly described so.

Claims

1. An apparatus comprising: A metallized structure is disposed in a packaging substrate, wherein the metallized structure includes multiple conductive layers and multiple dielectric layers; and An embedded support reinforcement is disposed on the periphery of the metallized structure outside the metallized structure, wherein the embedded support reinforcement includes a plurality of support columns and a plurality of vertically stacked support layers, each support layer comprising: Metal layer; Multiple short pillars coupled to the metal layer; A dielectric layer disposed above the metal layer and the plurality of short pillars; and Multiple vias are configured to pass through the dielectric layer and couple to the multiple short posts, wherein the multiple support posts include vertically aligned short posts and vias coupled to a metal layer in each of the multiple support layers.

2. The apparatus of claim 1, wherein each of the plurality of vias is coupled to a next metal layer of the next support layer of the plurality of support layers, or coupled to a base metal layer adjacent to the last support layer of the plurality of support layers.

3. The apparatus according to claim 1, further comprising: A top external reinforcement member, which is coupled to an embedded bracket reinforcement member via a bonding layer.

4. The apparatus of claim 3, wherein the bonding layer comprises an adhesive or a solder.

5. The device of claim 4, wherein the top external reinforcement comprises metal or another substrate.

6. The apparatus according to claim 3, further comprising: A cover, which is coupled to the top external reinforcement.

7. The device of claim 6, wherein the top external reinforcement comprises: The first part is perpendicularly aligned with the embedded bracket reinforcement; and The second part extends over the metallized structure of the packaging substrate.

8. The apparatus of claim 7, wherein the bonding layer extends at least partially beneath the second portion.

9. The apparatus of claim 8, wherein the bonding layer comprises: A conductive portion is disposed between the embedded bracket reinforcement and the first portion of the top external reinforcement; and An adhesive portion, which is at least partially disposed below the second portion.

10. The apparatus of claim 1, wherein the embedded support reinforcement comprises a plurality of winding portions, wherein in each winding portion, at least one of the plurality of support layers has at least one fewer short post and through hole than the plurality of short posts and through holes of the plurality of support layers outside each winding portion.

11. The apparatus according to claim 1, further comprising: A bottom external reinforcement is disposed on the back side of the packaging substrate adjacent to the embedded bracket reinforcement.

12. The apparatus of claim 1, wherein the packaging substrate further comprises: substrate core.

13. The apparatus of claim 12, wherein the embedded support reinforcement further comprises: A top-embedded bracket reinforcement is disposed on the top side of the substrate core; A bottom embedded bracket reinforcement is disposed on the bottom side of the substrate core; and A support core member configured to couple the top embedded support reinforcement and the bottom embedded support reinforcement.

14. The apparatus of claim 13, wherein the support core member is at least one of the following: Embedded rod; Electroplated through-hole (PTH); Double-sided laser drilling (DSLD) vias; or Their combination.

15. The apparatus according to claim 1, wherein: The embedded support reinforcement includes rings surrounding all sides of the periphery of the metallized structure. The embedded support reinforcement includes a ring surrounding all sides of the periphery of the metallized structure and at least one internal channel disposed between opposite sides of the ring. The embedded support reinforcement includes a ring surrounding all sides of the periphery of the metallized structure, wherein at least one winding portion has a reduced number of short posts and through holes, or The embedded support reinforcement includes a ring that surrounds only a portion of the periphery of the metallized structure.

16. The apparatus of claim 1, further comprising: A bare die, which is disposed on the top surface of the packaging substrate and electrically coupled to the metallization structure of the packaging substrate; and A plurality of connectors are disposed on the bottom surface of the packaging substrate and electrically coupled to the embedded support reinforcement and the metallized structure of the packaging substrate.

17. The apparatus of claim 1, wherein the apparatus comprises at least one of: a music player, a video player, an entertainment unit, a navigation device, a communication device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed-location terminal, a tablet computer, a computer, a wearable device, a laptop computer, an apparatus in a motor vehicle, an Internet of Things (IoT) device, or a server.

18. A method of manufacturing an apparatus, the method comprising: A metallization structure is formed, the metallization structure being disposed in a packaging substrate, wherein the metallization structure includes multiple conductive layers and multiple dielectric layers; as well as An embedded support reinforcement is formed, the embedded support reinforcement being disposed on the periphery of the metallized structure outside the metallized structure, wherein the embedded support reinforcement includes a plurality of support columns and a plurality of vertically stacked support layers, each support layer being formed by the following operations: Form a metal layer; Multiple short pillars are formed, and the multiple short pillars are coupled to the metal layer; A dielectric layer is deposited over the metal layer and the plurality of short pillars; as well as A plurality of vias are formed, the plurality of vias being configured to pass through the dielectric layer and couple to the plurality of short posts, wherein the plurality of support posts include vertically aligned short posts and vias coupled to a metal layer in each of the plurality of support layers.

19. The method according to claim 18, further comprising: A top external reinforcement is formed, which is coupled to the embedded bracket reinforcement via a bonding layer.

20. The method of claim 18, wherein: The embedded support reinforcement includes rings surrounding all sides of the periphery of the packaging substrate. The embedded support reinforcement includes a ring surrounding all sides of the periphery of the packaging substrate and at least one internal channel disposed between opposite sides of the ring. The embedded support reinforcement includes a ring surrounding all sides of the periphery of the packaging substrate, wherein at least one winding portion has a reduced number of short posts and vias, or The embedded support reinforcement includes a ring that surrounds only a portion of the periphery of the packaging substrate.

Images