Semiconductor device

Abstract

The present application aims to provide a technology capable of improving the reliability of a semiconductor device by suppressing moisture intrusion around a semiconductor element. The semiconductor device includes: a base member (1); an insulating substrate (2) disposed on the base member (1) and having a circuit pattern (2a) on an upper surface; a plurality of semiconductor elements (3) mounted on the circuit pattern (2a) of the insulating substrate (2); a housing member (4) disposed around the insulating substrate (2) in plan view and having an opening (4a); a main electrode (7, 8) having one end connected to the circuit pattern (2a) and having a shape that overlaps at least a portion of each of all the semiconductor elements (3) mounted on the insulating substrate (2) in plan view; a sealing material (9) filled in the housing member (4); and a cover member (5) that plugs the opening (4a) of the housing member (4) in a manner to cover an upper surface of the sealing material (9).

Description

Technical Field

[0001] This disclosure relates to semiconductor devices. Background Technology

[0002] For example, Patent Document 1 discloses a semiconductor device including a base member, a housing member, an insulating substrate, a semiconductor element, a sealing material, a main electrode, and a cover member. Furthermore, it discloses that the semiconductor device can employ a structure where the main electrode covers the semiconductor element, or it can employ a structure where the main electrode is replaced by a wire or the like without a main electrode.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2021 / 144980 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] In the semiconductor device described in Patent Document 1, the upper side of the semiconductor element is covered by a sealing material, a housing, and a cover member. When the semiconductor device is exposed to a high-humidity environment, the high-humidity atmosphere can enter through gaps between components that are not completely sealed, such as the gap between the main electrode and the housing member, or through the housing member or cover member, causing moisture to penetrate into the semiconductor device. As a result, moisture can easily penetrate the sealing material and reach the area around the semiconductor element, leading to a decrease in the reliability of the semiconductor device due to semiconductor element degradation.

[0008] Therefore, the purpose of this disclosure is to provide a technique that can improve the reliability of semiconductor devices by inhibiting the intrusion of moisture into the area surrounding the semiconductor element.

[0009] Technical means for solving technical problems

[0010] The semiconductor device disclosed herein includes: a base member; an insulating substrate disposed on the base member and having a circuit pattern on its upper surface; a plurality of semiconductor elements mounted on the circuit pattern on the insulating substrate; a housing member configured to surround the insulating substrate in a top view and having an opening; a main electrode having one end connected to the circuit pattern and having a shape that overlaps at least a portion of each of the semiconductor elements mounted on the insulating substrate in a top view; a sealing material filling the housing member; and a cover member blocking the opening of the housing member in a manner that covers the upper surface of the sealing material.

[0011] Invention Effects

[0012] According to this disclosure, since at least a portion of each of the semiconductor elements mounted on the insulating substrate is covered by the main electrode when viewed from above, the intrusion of moisture into the area surrounding the semiconductor elements can be suppressed by increasing the pathway for moisture to reach the area surrounding the semiconductor elements. As a result, the reliability of the semiconductor device can be improved.

[0013] The purpose, features, aspects, and advantages of this disclosure will become more apparent from the following detailed description and accompanying drawings. Attached Figure Description

[0014] Figure 1 This is a cross-sectional view of the semiconductor device according to Embodiment 1.

[0015] Figure 2 This is a top view of the semiconductor device according to Embodiment 1.

[0016] Figure 3 This is a cross-sectional view of the semiconductor device involved in a variation of Embodiment 1.

[0017] Figure 4 This is a top view of the semiconductor device involved in a variation of Embodiment 1.

[0018] Figure 5 This is a top view of the semiconductor device involved in Variation 2 of Embodiment 1.

[0019] Figure 6 This is a cross-sectional view of the semiconductor device according to Embodiment 2.

[0020] Figure 7 This is a top view of the semiconductor device involved in Embodiment 2.

[0021] Figure 8 This is a cross-sectional view of the semiconductor device according to Embodiment 3.

[0022] Figure 9 This is a cross-sectional view of the semiconductor device according to Embodiment 4.

[0023] Figure 10 This is a top view of the semiconductor device involved in Embodiment 4.

[0024] Figure 11 This is a cross-sectional view of the semiconductor device according to Embodiment 5.

[0025] Figure 12 This is a top view of the semiconductor device according to Embodiment 5.

[0026] Figure 13 This is a cross-sectional view of the semiconductor device involved in a variation of Embodiment 5, Example 1.

[0027] Figure 14 This is a top view of the semiconductor device involved in a variation of Embodiment 5, Example 1.

[0028] Figure 15 This is a top view of the semiconductor device involved in Variation 2 of Embodiment 5.

[0029] Figure 16 This is a cross-sectional view of the semiconductor device according to Embodiment 6.

[0030] Figure 17 This is a top view of the semiconductor device involved in Embodiment 6.

[0031] Figure 18 This is a cross-sectional view of the semiconductor device according to Embodiment 7.

[0032] Figure 19 This is a top view of the semiconductor device according to Embodiment 7.

[0033] Figure 20 This is a cross-sectional view of the semiconductor device according to Embodiment 8.

[0034] Figure 21 This is a top view of the semiconductor device according to Embodiment 8.

[0035] Figure 22 This is a cross-sectional view of a semiconductor device according to a variation of Embodiment 8.

[0036] Figure 23 This is a top view of the semiconductor device involved in a variation of Embodiment 8.

[0037] Figure 24 This is a cross-sectional view of the semiconductor device according to Embodiment 9.

[0038] Figure 25 This is a top view of the semiconductor device according to Embodiment 9.

[0039] Figure 26 This is a cross-sectional view of the semiconductor device according to Embodiment 10.

[0040] Figure 27 This is a top view of the semiconductor device according to Embodiment 10.

[0041] Figure 28 This is a cross-sectional view of the semiconductor device according to Embodiment 11.

[0042] Figure 29 This is a top view of the semiconductor device according to Embodiment 11.

[0043] Figure 30This is a cross-sectional view of a semiconductor device according to a variation of Embodiment 11.

[0044] Figure 31 This is a top view of a semiconductor device according to a variation of Embodiment 11.

[0045] Figure 32 This is a cross-sectional view of the semiconductor device according to Embodiment 12.

[0046] Figure 33 This is a top view of the semiconductor device according to Embodiment 12.

[0047] Figure 34 This is a cross-sectional view of the semiconductor device according to Embodiment 13.

[0048] Figure 35 This is a top view of the semiconductor device according to Embodiment 13.

[0049] Figure 36 This is a cross-sectional view of a semiconductor device according to a variation of Embodiment 13.

[0050] Figure 37 This is a top view of the semiconductor device involved in a variation of Embodiment 13.

[0051] Figure 38 This is a cross-sectional view of the semiconductor device according to Embodiment 14.

[0052] Figure 39 This is a top view of the semiconductor device according to Embodiment 14. Detailed Implementation

[0053] <Implementation Method 1>

[0054] The following description uses the accompanying drawings to illustrate Embodiment 1. Figure 1 This is a cross-sectional view of the semiconductor device according to Embodiment 1. Figure 2 This is a top view of the semiconductor device according to Embodiment 1.

[0055] like Figure 1 and Figure 2 As shown, the semiconductor device includes: a base component 1, an insulating substrate 2, a plurality of (e.g., four) semiconductor elements 3, a housing component 4, main electrodes 7 and 8, a sealing material 9, and a cover component 5. Additionally, in Figure 2 In order to facilitate observation of the internal structure, the illustrations of shell component 4, sealing material 9 and cover component 5 are omitted. The illustrations of these components are also omitted in the subsequent top view.

[0056] The base member 1 is made of a metal such as copper and is quadrilateral when viewed from above. An insulating substrate 2 is provided on the upper surface of the base member 1, excluding the peripheral portion. Multiple circuit patterns 2a are provided on the upper surface of the insulating substrate 2. The circuit patterns 2a are made of a metal such as copper. The housing member 4 is formed into a quadrilateral frame when viewed from above and is joined to the outer periphery of the base member 1. Furthermore, the housing member 4 is made of resin and has insulating properties.

[0057] Multiple semiconductor elements 3 are mounted on a circuit pattern 2a on an insulating substrate 2. The multiple semiconductor elements 3 are connected via wiring 6. The semiconductor elements 3 include, for example, power semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), or diodes. The semiconductor material of the semiconductor elements 3 can be Si or SiC, but SiC is preferred. Since SiC semiconductor elements have a higher operating temperature than Si semiconductor elements, mounting SiC semiconductor elements enables high-temperature operation of the semiconductor device and improves reliability in response to humidity.

[0058] The main electrodes 7 and 8 are made of metal and have a shape that overlaps at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. Specifically, the main electrode 7... Figure 1 and Figure 2 The central portion of the insulating substrate 2 extends to the left end, covering the substrate mounted on... Figure 1 and Figure 2 The upper surface of each of the two semiconductor elements 3 on the left side of the insulating substrate 2. Since the main electrode 7 is made of metal, it is possible to prevent moisture from penetrating the semiconductor device from entering the underside of the main electrode 7. In addition, one end of the main electrode 7 is connected to the circuit pattern 2a, and the other end protrudes outward from the through hole 5a of the cover member 5, which will be described later.

[0059] In addition, the main electrode 8 from Figure 1 and Figure 2 The central portion of the insulating substrate 2 extends to the right end, covering the substrate mounted on it. Figure 1 and Figure 2 The upper surface of each of the two semiconductor elements 3 on the right side of the insulating substrate 2. Since the main electrode 8 is made of metal, it is possible to prevent moisture from penetrating the semiconductor device from entering the underside of the main electrode 8. In addition, one end of the main electrode 8 is connected to the circuit pattern 2a, and the other end protrudes outward from the through hole 5b of the cover member 5, which will be described later.

[0060] In addition, the main electrode 7 can also have a covering Figure 1 and Figure 2 The shape of the entire upper surface of each of the two semiconductor elements 3 mounted on the left side of the insulating substrate 2, and the main electrode 8 may also have a covering Figure 1 and Figure 2 The shape of the entire upper surface of each of the two semiconductor elements 3 mounted on the right side of the insulating substrate 2. This is also the case in subsequent embodiments.

[0061] The sealing material 9, such as epoxy resin or silicone gel, fills the housing member 4. The cover member 5, also made of resin, is quadrilateral when viewed from above. The cover member 5 is installed at the upper end of the housing member 4 such that it covers the upper surface of the sealing material 9 and blocks the opening 4a of the housing member 4. Through holes 5a and 5b are formed on the cover member 5.

[0062] As described above, the semiconductor device according to Embodiment 1 includes: a base member 1; an insulating substrate 2 disposed on the base member 1 and having a circuit pattern 2a on its upper surface; a plurality of semiconductor elements 3 mounted on the circuit pattern 2a of the insulating substrate 2; a housing member 4 configured to surround the insulating substrate 2 when viewed from above and having an opening 4a; main electrodes 7 and 8, one end of which is connected to the circuit pattern 2a and having a shape that overlaps at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above; a sealing material 9 filled within the housing member 4; and a cover member 5 that blocks the opening 4a of the housing member 4 by covering the upper surface of the sealing material 9.

[0063] Therefore, since at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 is covered by the main electrodes 7 and 8 when viewed from above, the intrusion of moisture into the area surrounding the semiconductor elements 3 can be suppressed by increasing the pathway for moisture to reach the area surrounding the semiconductor elements 3. As a result, the reliability of the semiconductor device can be improved.

[0064] Furthermore, since there is no need to install components such as resin insulating sheets to prevent moisture intrusion, the increase in manufacturing costs can be suppressed without the need for additional processes.

[0065] In addition, since the semiconductor material of semiconductor element 3 is SiC, the semiconductor device can operate at high temperatures and its reliability in response to humidity can be improved.

[0066] Next, a variation of Implementation 1 will be described. Figure 3 This is a cross-sectional view of the semiconductor device involved in a variation of Embodiment 1. Figure 4 This is a top view of the semiconductor device involved in a variation of Embodiment 1. Figure 5 This is a top view of the semiconductor device involved in Variation 2 of Embodiment 1.

[0067] like Figure 3 and Figure 4 As shown, the main electrode 8 can also extend vertically without covering the semiconductor element 3 when viewed from above, with only the main electrode 7 covering a portion of each of the four semiconductor elements 3 mounted on the insulating substrate 2. Specifically, the main electrode 7 extends from... Figure 3 and Figure 4 The portion of the insulating substrate 2 that is closer to the center than the right end extends to the left end.

[0068] In addition, such as Figure 5 As shown, the main electrode 7 can also be divided into two parts, front and back. When viewed from above, the front main electrode 7 covers a portion of each of the two semiconductor elements 3 mounted on the front portion of the insulating substrate 2, and the rear main electrode 7 covers a portion of each of the two semiconductor elements 3 mounted on the rear portion of the insulating substrate 2. As described above, in variations 1 and 2 of Embodiment 1, the same effects as in Embodiment 1 can be obtained.

[0069] <Implementation Method 2>

[0070] Next, the semiconductor device according to Embodiment 2 will be described. Figure 6 This is a cross-sectional view of the semiconductor device according to Embodiment 2. Figure 7 This is a top view of the semiconductor device according to Embodiment 2. Furthermore, in Embodiment 2, the same reference numerals are used for the same structural elements as described in Embodiment 1, and descriptions are omitted.

[0071] like Figure 6 and Figure 7 As shown, in Embodiment 2, each main electrode 7, 8 has a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. Specifically, similar to Variation 1 of Embodiment 1, the main electrodes 7 from... Figure 6 and Figure 7 The portion of the insulating substrate 2, closer to the center than the right end, extends to the left end, covering a portion of each of the four semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. The main electrode 8 is located above the main electrode 7, from... Figure 6 and Figure 7 The right end of the insulating substrate 2 extends to the left end, covering a portion of each of the four semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. In addition, one end of the main electrode 8 is connected to the circuit pattern 2a, and the other end protrudes outward from the through hole 5a of the cover member 5.

[0072] As described above, the semiconductor device involved in Embodiment 2 includes a plurality of main electrodes, each main electrode 7, 8 having a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0073] Therefore, since the semiconductor elements 3 are covered by multiple main electrodes 7 and 8 when viewed from above, moisture that needs to penetrate the semiconductor device must bypass the multiple main electrodes 7 and 8. Therefore, compared with embodiment 1, the effect of making it more difficult for moisture to reach the semiconductor elements 3 is increased, which can further improve the reliability of the semiconductor device.

[0074] <Implementation Method 3>

[0075] Next, the semiconductor device according to Embodiment 3 will be described. Figure 8 This is a cross-sectional view of the semiconductor device according to Embodiment 3. Furthermore, in Embodiment 3, structural elements identical to those described in Embodiments 1 and 2 are labeled with the same reference numerals and their descriptions are omitted.

[0076] like Figure 8 As shown, in embodiment 3, the main electrode 8 extends vertically without covering the semiconductor element 3 when viewed from above, while only the main electrode 7 covers a portion of each of the four semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. Furthermore, multiple connection points are provided between the main electrode 7 and the circuit pattern 2a. Specifically, the connection points between the main electrode 7 and the circuit pattern 2a are... Figure 8 The two locations are the left end and the part closer to the center than the right end of the insulating substrate 2. In addition, there can be more than three connection points between the main electrode 7 and the circuit pattern 2a.

[0077] When a structure is adopted in which the semiconductor element 3 and the main electrode 7 overlap in a top view, the main electrode 7 may sometimes be arranged in a relatively long manner. In this case, the inductance of the main electrode 7 itself increases, which can lead to problems such as increased surge voltage when the semiconductor element 3 is switched on. In embodiment 3, multiple connection points are provided between the main electrode 7 and the circuit pattern 2a, which reduces the inductance of the main electrode 7 itself and suppresses the surge voltage when the semiconductor element 3 is switched on.

[0078] As described above, in the semiconductor device according to Embodiment 3, since there are multiple connection points between the main electrode 7 and the circuit pattern 2a, the wiring inductance of the semiconductor device can be reduced.

[0079] <Implementation Method 4>

[0080] Next, the semiconductor device according to Embodiment 4 will be described. Figure 9 This is a cross-sectional view of the semiconductor device according to Embodiment 4. Figure 10 This is a top view of the semiconductor device according to Embodiment 4. Furthermore, in Embodiment 4, structural elements identical to those described in Embodiments 1-3 are labeled with the same reference numerals and their descriptions are omitted.

[0081] like Figure 9 and Figure 10 As shown, in Embodiment 4, similar to Embodiment 2, each main electrode 7, 8 has a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. Furthermore, multiple connection points are provided between the main electrodes 7, 8 and the circuit pattern 2a. Specifically, the connection points between the main electrodes 7 and the circuit pattern 2a are... Figure 9 The insulating substrate 2 is located at two points: the portion closer to the center than the left end and the portion closer to the center than the right end. Additionally, the connection point between the main electrode 8 and the circuit pattern 2a is... Figure 9 The two connection points are at the left and right ends of the insulating substrate 2. Alternatively, there can be three or more of these connection points.

[0082] As described above, the same effects as in Embodiment 2 can be obtained in the semiconductor device according to Embodiment 4.

[0083] <Implementation Method 5>

[0084] Next, the semiconductor device according to Embodiment 5 will be described. Figure 11 This is a cross-sectional view of the semiconductor device according to Embodiment 5. Figure 12 This is a top view of the semiconductor device according to Embodiment 5. Furthermore, in Embodiment 5, structural elements identical to those described in Embodiments 1-4 are labeled with the same reference numerals and their descriptions are omitted.

[0085] like Figure 11 and Figure 12 As shown, the main electrodes 7 and 8 have protrusions 17 and 18, one end of which is connected to the middle part of the main electrode 7, and the other end is a free end that is not connected to the circuit pattern 2a. The protrusions 17 and 18 have a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0086] Extending part 17 from Figure 11 and Figure 12 The main electrode 7, located at the left end, extends from the middle to the center, covering a portion of each of the two semiconductor elements 3 mounted on the left side of the insulating substrate 2 when viewed from above. The other end of the protrusion 17 is a free end, therefore the protrusion 17 does not become a current path. Furthermore, the protrusion 18 extends from... Figure 11 and Figure 12 The main electrode 8, located at the right end, extends from the middle to the center, covering a portion of each of the two semiconductor elements 3 mounted on the right side of the insulating substrate 2 when viewed from above. The other end of the protrusion 18 is a free end, so the protrusion 18 does not become a current path.

[0087] As described above, in the semiconductor device according to Embodiment 5, the main electrodes 7 and 8 have protrusions 17 and 18, one end of which is connected to the middle part of the main electrode 7, and the other end is a free end that is not connected to the circuit pattern 2a. The protrusions 17 and 18 have a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0088] Therefore, since the inductance of the portion of the current path that serves as the main electrodes 7 and 8 can be reduced, surge voltages caused by the inductance of the main electrodes 7 and 8 can be suppressed when the semiconductor element 3 is switched.

[0089] Next, a variation of embodiment 5 will be described. Figure 13 This is a cross-sectional view of the semiconductor device involved in a variation of Embodiment 5, Example 1. Figure 14 This is a top view of the semiconductor device involved in a variation of Embodiment 5, Example 1. Figure 15 This is a top view of the semiconductor device involved in Variation 2 of Embodiment 5.

[0090] like Figure 13 and Figure 14 As shown, the main electrode 8 can also extend vertically without covering the semiconductor element 3 when viewed from above, with only the protrusion 17 of the main electrode 7 covering a portion of each of the four semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. Specifically, the protrusion 17 extends from... Figure 13 and Figure 14 The left end of the insulating substrate 2 extends to a portion that is closer to the center than the right end.

[0091] In addition, such as Figure 15 As shown, the protrusion 17 of the main electrode 7 can also be divided into two parts, front and back. When viewed from above, the front protrusion 17 covers a portion of each of the two semiconductor elements 3 mounted on the front part of the insulating substrate 2, and the rear protrusion 17 covers a portion of each of the two semiconductor elements 3 mounted on the rear part of the insulating substrate 2 when viewed from above.

[0092] As described above, the same effects as in Embodiment 5 can be obtained in the semiconductor devices involved in the variations 1 and 2 of Embodiment 5.

[0093] <Implementation Method 6>

[0094] Next, the semiconductor device according to Embodiment 6 will be described. Figure 16 This is a cross-sectional view of the semiconductor device according to Embodiment 6. Figure 17 This is a top view of the semiconductor device according to Embodiment 6. Furthermore, in Embodiment 6, structural elements identical to those described in Embodiments 1-5 are labeled with the same reference numerals and their descriptions are omitted.

[0095] like Figure 16 and Figure 17 As shown, in Embodiment 6, apart from the structure of Embodiment 5, the protrusion 18 of the main electrode 8 has a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0096] The protrusion 18 is located above the protrusion 17, from Figure 16 and Figure 17 The main electrode 8 located at the right end extends from the middle to the left end, covering a portion of each of the four semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0097] As described above, the semiconductor device according to Embodiment 6 includes a plurality of main electrodes, and the protrusions 17 and 18 of each main electrode 7, 8 have a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0098] Therefore, in addition to reducing the inductance of the main electrodes 7 and 8, the multiple main electrodes 7 and 8 cover each semiconductor element 3 when viewed from above, so that water entering the semiconductor device needs to bypass the multiple main electrodes 7 and 8. Therefore, compared with embodiment 1, the effect of making it more difficult for water to reach the semiconductor element 3 is increased, which can further improve the reliability of the semiconductor device.

[0099] <Implementation Method 7>

[0100] Next, the semiconductor device according to Embodiment 7 will be described. Figure 18 This is a cross-sectional view of the semiconductor device according to Embodiment 7. Figure 19 This is a top view of the semiconductor device according to Embodiment 7. Furthermore, in Embodiment 7, structural elements identical to those described in Embodiments 1-6 are labeled with the same reference numerals and their descriptions are omitted.

[0101] like Figure 18 and Figure 19 As shown, in embodiment 7, the main electrode 7 has a plurality of (two) protrusions 17. The two protrusions 17 are spaced apart in the vertical direction. The two protrusions 17 extend from... Figure 18 and Figure 19 The main electrode 7 located at the left end extends to a portion that is more central than the right end, covering a portion of the upper surface of each of the four semiconductor elements 3 mounted on the insulating substrate 2.

[0102] Alternatively, the main electrode 8 can have multiple protrusions 18 instead of the main electrode 7. Furthermore, there can be multiple protrusions 17 or 18, and it is not limited to two.

[0103] As described above, in the semiconductor device according to Embodiment 7, the main electrode 7 (or main electrode 8) has a plurality of protrusions 17 (or protrusions 18). Therefore, the same effect as in Embodiment 6 can be obtained. In addition, since the protrusions 17 (or protrusions 18) are provided from the main electrode 7 (or main electrode 8) at the same potential, the insulation design between the main electrodes 7 and 8 becomes easier.

[0104] <Implementation Method 8>

[0105] Next, the semiconductor device according to Embodiment 8 will be described. Figure 20 This is a cross-sectional view of the semiconductor device according to Embodiment 8. Figure 21 This is a top view of the semiconductor device according to Embodiment 8. Furthermore, in Embodiment 8, structural elements identical to those described in Embodiments 1-7 are labeled with the same reference numerals and their descriptions are omitted.

[0106] like Figure 20 and Figure 21 As shown, in Embodiment 8, the plurality of semiconductor elements 3 include a plurality of switching elements. Specifically, the plurality of semiconductor elements 3 include two pairs (corresponding to the two bridge arms) of diodes and IGBTs. The semiconductor device involved in Embodiment 8 is a so-called "2-in-1" power module. The switching circuit of the 2-in-1 module is provided on the insulating substrate 2.

[0107] The semiconductor device includes main electrodes 7, 8, and 10. Main electrode 7... Figure 20 and Figure 21 The central portion of the insulating substrate 2 extends to the left end, covering the substrate mounted on it when viewed from above. Figure 20 and Figure 21 A portion of each of the two semiconductor elements 3 on the left side of the insulating substrate 2.

[0108] The main electrode 10 is located above the main electrode 7, from Figure 20 and Figure 21 The central portion of the insulating substrate 2 extends to the left end, covering the substrate mounted on it when viewed from above. Figure 20 and Figure 21 A portion of each of the two semiconductor elements 3 on the left side of the insulating substrate 2.

[0109] Main electrode 8 from Figure 20 and Figure 21 The central portion of the insulating substrate 2 extends to the right end, covering the substrate mounted on it when viewed from above. Figure 20 and Figure 21 A portion of each of the two semiconductor elements 3 on the right side of the insulating substrate 2.

[0110] In addition, the multiple circuit patterns 2a corresponding to the multiple switching circuits can be set on one insulating substrate 2 or on multiple insulating substrates 2.

[0111] As described above, in the semiconductor device according to Embodiment 8, a plurality of semiconductor elements 3 constitute a plurality of switching circuits.

[0112] Compared to embodiment 1, since the number of main electrodes 7, 8, and 10 used to energize the multiple switching circuits is increased, the options for which main electrode is formed to overlap with at least a portion of each of the semiconductor elements 3 are also increased. As a result, the design of the main electrodes 7, 8, and 10 becomes easier.

[0113] Next, a variation of embodiment 8 will be described. Figure 22 This is a cross-sectional view of a semiconductor device according to a variation of Embodiment 8. Figure 23 This is a top view of the semiconductor device involved in a variation of Embodiment 8.

[0114] like Figure 22 and Figure 23 As shown, only the main electrodes 7 and 10 may have a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above, while the main electrode 8 extends in the vertical direction without overlapping with the semiconductor elements 3. As described above, the same effects as in Embodiment 8 can be obtained in the semiconductor device according to the variation of Embodiment 8.

[0115] <Implementation Method 9>

[0116] Next, the semiconductor device according to Embodiment 9 will be described. Figure 24 This is a cross-sectional view of the semiconductor device according to Embodiment 9. Figure 25 This is a top view of the semiconductor device according to Embodiment 9. Furthermore, in Embodiment 9, structural elements identical to those described in Embodiments 1-8 are labeled with the same reference numerals and their descriptions are omitted.

[0117] like Figure 24 and Figure 25 As shown, in embodiment 9, compared to embodiment 8, each main electrode 7, 8, 10 has a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0118] As described above, the semiconductor device according to Embodiment 9 includes a plurality of main electrodes, each of the main electrodes 7, 8, 10 having a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0119] Therefore, since the semiconductor elements 3 are covered by multiple main electrodes 7, 8, 10 when viewed from above, moisture that needs to penetrate the semiconductor device must bypass the multiple main electrodes 7, 8, 10. Therefore, compared with embodiment 8, the effect of making it more difficult for moisture to reach the area around the semiconductor elements 3 is increased, and the reliability of the semiconductor device can be further improved.

[0120] <Implementation Method 10>

[0121] Next, the semiconductor device according to Embodiment 10 will be described. Figure 26 This is a cross-sectional view of the semiconductor device according to Embodiment 10. Figure 27 This is a top view of the semiconductor device according to Embodiment 10. Furthermore, in Embodiment 10, structural elements identical to those described in Embodiments 1-9 are labeled with the same reference numerals and their descriptions are omitted.

[0122] like Figure 26 and Figure 27 As shown, in Embodiment 10, compared to Embodiment 8, multiple connection points are provided between the main electrodes 7, 8, and 10 and the circuit pattern 2a. This reduces the wiring inductance of the semiconductor device.

[0123] <Implementation Method 11>

[0124] Next, the semiconductor device according to Embodiment 11 will be described. Figure 28 This is a cross-sectional view of the semiconductor device according to Embodiment 11. Figure 29 This is a top view of the semiconductor device according to Embodiment 11. Furthermore, in Embodiment 11, structural elements identical to those described in Embodiments 1 to 10 are labeled with the same reference numerals and their descriptions are omitted.

[0125] like Figure 28 and Figure 29 As shown, in embodiment 11, compared to embodiment 8, the main electrode 7 has a protrusion 17, one end of which is connected to the middle portion of the main electrode 7, and the other end is a free end not connected to the circuit pattern 2a. The protrusion 17 has a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above. The main electrodes 8 and 10 extend in the vertical direction without overlapping with the semiconductor elements 3.

[0126] As described above, in embodiment 11, the main electrode 7 has a protrusion 17, one end of which is connected to the middle part of the main electrode 7, and the other end is a free end that is not connected to the circuit pattern 2a. The protrusion 17 has a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0127] Therefore, since the inductance of the portion of the current path that serves as the main electrode 7 can be reduced, surge voltage generated by the inductance of the main electrode 7 can be suppressed when the semiconductor element 3 is switched.

[0128] Next, a variation of embodiment 11 will be described. Figure 30 This is a cross-sectional view of a semiconductor device according to a variation of Embodiment 11. Figure 31 This is a top view of a semiconductor device according to a variation of Embodiment 11.

[0129] like Figure 30 and Figure 31 As shown, in addition to the protrusion 17 of the main electrode 7, the protrusion 20 of the main electrode 10 may also have a shape that, when viewed from above, overlaps with the portion mounted on the insulating substrate 2. Figure 30 and Figure 31 The semiconductor elements 3 on the left side of the image have at least a partially overlapping shape, and the protruding portion 18 of the main electrode 8 may also have a shape that overlaps with the portion mounted on the insulating substrate 2 when viewed from above. Figure 30 and Figure 31 The semiconductor elements 3 on the right side of the image have at least a partially overlapping shape. Therefore, compared to embodiment 11, the effect of making it more difficult for moisture to reach the area around the semiconductor elements 3 is increased, further improving the reliability of the semiconductor device.

[0130] <Implementation Method 12>

[0131] Next, the semiconductor device according to Embodiment 12 will be described. Figure 32 This is a cross-sectional view of the semiconductor device according to Embodiment 12. Figure 33 This is a top view of the semiconductor device according to Embodiment 12. Furthermore, in Embodiment 12, structural elements identical to those described in Embodiments 1-11 are labeled with the same reference numerals and their descriptions are omitted.

[0132] like Figure 32 and Figure 33 As shown, in Embodiment 12, compared to Embodiment 11, the protrusions 17, 18, and 20 of each main electrode 7, 8, and 10 have a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0133] As described above, the semiconductor device according to Embodiment 12 includes a plurality of main electrodes, and the protrusions 17, 18, 20 of each main electrode 7, 8, 10 have a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above.

[0134] Therefore, compared with embodiment 11, the effect of making it more difficult for moisture to reach the area around the semiconductor element 3 is increased, which can further improve the reliability of the semiconductor device.

[0135] <Implementation Method 13>

[0136] Next, the semiconductor device according to Embodiment 13 will be described. Figure 34 This is a cross-sectional view of the semiconductor device according to Embodiment 13. Figure 35 This is a top view of the semiconductor device according to Embodiment 13. Furthermore, in Embodiment 13, structural elements identical to those described in Embodiments 1-12 are labeled with the same reference numerals and their descriptions are omitted.

[0137] like Figure 34 and Figure 35 As shown, in embodiment 13, the main electrode 7, the main electrode 10, and the main electrode 8 are respectively the P main electrode, the N main electrode, and the AC main electrode.

[0138] Main electrode 7 from Figure 34 and Figure 35 The central portion of the insulating substrate 2 extends to the left end, covering the substrate mounted on it when viewed from above. Figure 34 and Figure 35 A portion of each of the two semiconductor elements 3 on the left side of the insulating substrate 2.

[0139] The main electrode 10 is located above the main electrode 7, from Figure 34 and Figure 35 The central portion of the insulating substrate 2 extends to the left end, covering the substrate mounted on it when viewed from above. Figure 34 and Figure 35 The insulating substrate 2 is a portion of each of the two semiconductor elements 3 on the left side. Therefore, the main electrode 7, which is the P main electrode, and the main electrode 10, which is the N main electrode, extend parallel to each other.

[0140] Main electrode 8 from Figure 34 and Figure 35 The central portion of the insulating substrate 2 extends to the right end, covering the substrate mounted on it when viewed from above. Figure 34 and Figure 35 A portion of each of the two semiconductor elements 3 on the right side of the insulating substrate 2.

[0141] As described above, the semiconductor device according to Embodiment 13 includes a plurality of main electrodes, the plurality of main electrodes 7, 10, 8 including a P main electrode, an N main electrode and an AC main electrode, the main electrode 7 as a P main electrode and the main electrode 10 as an N main electrode extend parallel to each other.

[0142] Therefore, when one of the semiconductor elements 3 in the multiple switching circuits switches, mutually canceling induced electromotive forces are generated on the main electrode 7 and the main electrode 10, thus suppressing the surge voltage generated by the inductance of the main electrode 7 and the main electrode 10.

[0143] Next, a variation of embodiment 13 will be described. Figure 36 This is a cross-sectional view of a semiconductor device according to a variation of Embodiment 13. Figure 37 This is a top view of the semiconductor device involved in a variation of Embodiment 13.

[0144] like Figure 36 and Figure 37 As shown, only the main electrodes 7 and 10 may have a shape that overlaps with at least a portion of each of the semiconductor elements 3 mounted on the insulating substrate 2 when viewed from above, while the main electrode 8 extends in the vertical direction without overlapping with the semiconductor elements 3.

[0145] As described above, the same effects as in Embodiment 13 can be obtained in the variations of Embodiment 13.

[0146] <Implementation Method 14>

[0147] Next, the semiconductor device according to Embodiment 14 will be described. Figure 38 This is a cross-sectional view of the semiconductor device according to Embodiment 14. Figure 39 This is a top view of the semiconductor device according to Embodiment 14. Furthermore, in Embodiment 14, structural elements identical to those described in Embodiments 1-13 are labeled with the same reference numerals and their descriptions are omitted.

[0148] like Figure 38 and Figure 39 As shown, in Embodiment 14, compared to Embodiment 1, when the top view area of ​​the sealing material 9 exposed when the cover member 5 is removed is defined as A, and the top view area of ​​the overlapping area between the sealing material 9 and the main electrodes 7 and 8 is defined as B, B is an area of ​​50% or more of A. As the ratio of B to A increases to 50%, 70%, and 90%, the path for moisture to penetrate into the semiconductor device to bypass the main electrodes 7 and 8 becomes longer, making it more difficult to reach the vicinity of the semiconductor element 3.

[0149] In addition, Figure 39 Although the sealing material 9 is not shown in the diagram, since it is filled inside the housing component 4, its top view area is similar to that of the sealing material 9. Figure 39 The base component 1 in each embodiment has the same top view area. Alternatively, the structure of embodiment 14 can be used in embodiments 2 to 13.

[0150] As described above, in the semiconductor device according to Embodiment 14, the top view area of ​​the portion where the sealing material 9 overlaps with the main electrodes 7 and 8 is 50% or more of the top view area of ​​the sealing material 9.

[0151] Therefore, the path of water entering the semiconductor device around the main electrodes 7 and 8 becomes longer, making it more difficult for water to reach the vicinity of the semiconductor element 3. Thus, compared with embodiment 1, the reliability of the semiconductor device can be further improved.

[0152] While this disclosure has been described in detail, the foregoing description is exemplary in all respects and not restrictive. It is to be understood that numerous variations not illustrated are conceivable.

[0153] Furthermore, it is possible to freely combine the various implementation methods, or appropriately modify or omit the various implementation methods.

[0154] Label Explanation

[0155] 1 Base component, 2 Insulating substrate, 2a Circuit pattern, 3 Semiconductor element, 4 Housing component, 4a Opening, 5 Cover component, 7 Main electrode, 8 Main electrode, 9 Sealing material, 10 Main electrode, 17 Protrusion, 18 Protrusion, 20 Protrusion.

Claims

1. A semiconductor device, characterized in that, include: Base components; An insulating substrate disposed on the base member and having a circuit pattern on its upper surface; Multiple semiconductor elements are mounted on the circuit pattern of the insulating substrate; A housing component, configured to surround the insulating substrate when viewed from above, and having an opening; A main electrode, one end of which is connected to the circuit pattern and has a shape that overlaps with at least a portion of each of the semiconductor elements mounted on the insulating substrate when viewed from above; A sealing material that fills the housing component; as well as A cover member that blocks the opening of the housing member by covering the upper surface of the sealing material.

2. The semiconductor device as claimed in claim 1, characterized in that, Includes multiple main electrodes, Each of the main electrodes has a shape that overlaps with at least a portion of each of the semiconductor elements mounted on the insulating substrate when viewed from above.

3. The semiconductor device as claimed in claim 1 or 2, characterized in that, The main electrode is provided with multiple connection points to the circuit pattern.

4. The semiconductor device as claimed in claim 1, characterized in that, The main electrode has a protruding portion, one end of which is connected to the middle portion of the main electrode, and the other end is a free end that is not connected to the circuit pattern. The protrusion has a shape that overlaps with at least a portion of each of the semiconductor elements mounted on the insulating substrate when viewed from above.

5. The semiconductor device as claimed in claim 4, characterized in that, Includes multiple main electrodes, The protrusion of each of the main electrodes has a shape that overlaps with at least a portion of each of the semiconductor elements mounted on the insulating substrate when viewed from above.

6. The semiconductor device as claimed in claim 4, characterized in that, The main electrode has a plurality of the aforementioned protrusions.

7. The semiconductor device as claimed in claim 1, characterized in that, The semiconductor elements constitute multiple switching circuits.

8. The semiconductor device as claimed in claim 7, characterized in that, Includes multiple main electrodes, Each of the main electrodes has a shape that overlaps with at least a portion of each of the semiconductor elements mounted on the insulating substrate when viewed from above.

9. The semiconductor device as claimed in claim 7, characterized in that, The main electrode is provided with multiple connection points to the circuit pattern.

10. The semiconductor device as claimed in claim 7, characterized in that, The main electrode has a protruding portion, one end of which is connected to the middle portion of the main electrode, and the other end is a free end that is not connected to the circuit pattern. The protrusion has a shape that overlaps with at least a portion of each of the semiconductor elements mounted on the insulating substrate when viewed from above.

11. The semiconductor device as claimed in claim 10, characterized in that, Includes multiple main electrodes, The protrusion of each of the main electrodes has a shape that overlaps with at least a portion of each of the semiconductor elements mounted on the insulating substrate when viewed from above.

12. The semiconductor device as claimed in claim 7, characterized in that, Includes multiple main electrodes, The plurality of main electrodes include a P main electrode, an N main electrode, and an AC main electrode. The P main electrode and the N main electrode extend parallel to each other.

13. The semiconductor device according to any one of claims 1 to 12, characterized in that, The top view area of ​​the portion where the sealing material overlaps with the main electrode is more than 50% of the top view area of ​​the sealing material.

14. The semiconductor device according to any one of claims 1 to 13, characterized in that, The semiconductor material of the semiconductor element is SiC.

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