Plasma processing apparatus, pre-mounting processing apparatus, mounting system, and pre-mounting processing method

Abstract

This invention provides a plasma treatment apparatus, a pre-installation treatment apparatus, a mounting system, and a pre-installation treatment method for suppressing the reduction of bonding strength at the interface between an electronic component and a mounting substrate. A plasma treatment apparatus 102, before mounting an electronic component E (according to an embodiment) onto a mounting substrate BW, performs surface treatment on the interface between the electronic component E and the mounting substrate BW using plasma. The plasma treatment apparatus 102 includes: a stage 20 for supporting a component supply body TW, in which a sheet T with an adhesive portion on its surface is supported by a ring R and the electronic component E is adhered to the sheet T; a chamber 10 for depressurizing the interior; an exhaust port 60; a gas inlet 30; a plasma generator 40 for plasmaizing a reactive gas; and a control device that determines that the volatile components in the chamber 10 have completely evaporated from the component supply body TW during depressurization, and based on this determination, introduces a reactive gas from the gas inlet 30, causing the plasma generator 40 to plasmaize the reactive gas.

Description

Technical Field

[0001] This invention relates to a plasma treatment apparatus, a pre-installation treatment apparatus, an installation system, and a pre-installation treatment method. Background Technology

[0002] One method for mounting electronic components, i.e., semiconductor chips, onto a mounting substrate is direct bonding. Direct bonding is a mounting method that directly connects the mounting substrate and the semiconductor chip's terminals without using bonding components such as solder bumps. For example, hydroxyl groups are used to seal the surfaces (protective films such as SiO2 films) of the mounting substrate and the semiconductor chip. By bringing their surfaces into contact and applying pressure and heat, the mounting substrate and the semiconductor chip are bonded together by hydrogen bonds between the hydroxyl groups, eventually transforming into covalent bonds via oxygen atoms. Thus, the terminals of the mounting substrate and the semiconductor chip are diffusely bonded together in a largely integrated manner.

[0003] "Jointing" includes "temporary bonding" and "formal bonding". Temporary bonding is the direct mounting (bonding) of electronic components onto the mounting substrate, while formal bonding refers to the covalent bonding between the temporarily bonded electronic components and the mounting substrate through annealing. In the following description, "temporary bonding" will be referred to as "mounting".

[0004] A semiconductor chip is an electronic component that is miniaturized by dicing and then mounted on a ring. The assembly comprising this miniaturized chip and the ring is called a component supply. The chip on which the electronic component is detached from the component supply is called a mounting substrate.

[0005] In cases where electronic components from a component supplier are directly bonded to a mounting substrate, pre-treatment and cleaning processes are performed on the miniaturized wafer and the mounting substrate prior to this. The pre-treatment includes surface treatment (activation treatment and cleaning treatment). Activation treatment utilizes reactive species such as ions and free radicals generated by plasma atomizing a reactive gas to activate the surfaces of the electronic components and the mounting substrate. Activation treatment involves breaking the chemical bonds of surface molecules, specifically etching the oxide film formed on the surfaces of the electronic components and the mounting substrate, and sealing the surfaces of the electronic components and the mounting substrate using hydroxyl groups. Cleaning treatment utilizes the generated reactive species such as ions and free radicals to clean the surfaces of the electronic components and the mounting substrate. Cleaning treatment involves ejecting and removing particles adhering to the surface or decomposing and removing organic matter.

[0006] In the following description, the activation and cleaning processes performed using plasma are referred to as surface treatment, and the apparatus for performing the surface treatment is referred to as a plasma treatment apparatus. Furthermore, plasma treatment apparatuses can generally perform processes other than surface treatment, and processes including surface treatment performed by plasma treatment apparatuses are broadly referred to as plasma treatment. Additionally, plasma treatment includes depressurization for generating plasma and depressurization for releasing the depressurization. Furthermore, pretreatment is sometimes referred to as pre-mounting treatment. Cleaning is a process that uses liquids such as water to clean particles and other contaminants present on the surfaces of electronic components and mounting substrates; the apparatus for performing this cleaning process is referred to as a cleaning apparatus.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: Japanese Patent Application Publication No. 2020-021966 Summary of the Invention

[0010] The problem that the invention aims to solve

[0011] However, in this direct bonding process, a decrease in bonding strength sometimes occurs at the bonding surfaces of the electronic components and the mounting substrate. This decrease in bonding strength raises concerns about the potential for poor quality in products manufactured through the bonding (mounting) of electronic components to the mounting substrate.

[0012] The purpose of this invention is to provide a plasma processing apparatus, a pre-installation processing apparatus, a mounting system, and a pre-installation processing method that can suppress the reduction of bonding strength at the interface between electronic components and mounting substrates.

[0013] Technical means to solve the problem

[0014] One embodiment is a plasma processing apparatus that, before mounting electronic components onto a mounting substrate, uses plasma to perform surface treatment on the mating surfaces of the electronic components and the mounting substrate. The plasma processing apparatus includes: a stage for supporting a component supply body, in which a sheet with an adhesive portion on its surface is supported by a ring and the electronic component is adhered to the sheet; a chamber housing the stage and capable of depressurizing its interior; an exhaust port for venting gas from the chamber; a gas inlet for introducing reactive gas into the depressurized chamber; a plasma generator for plasmaizing the reactive gas; and a control device that determines that the volatile components in the chamber have completely evaporated from the component supply body during depressurization, and based on this determination, introduces the reactive gas from the gas inlet, causing the plasma generator to plasmaize the reactive gas.

[0015] The pre-installation treatment apparatus of the embodiment includes: the plasma treatment apparatus; a loading port for loading / unloading the part supply body and the mounting substrate; a supply body cleaning apparatus for cleaning the part supply body; a mounting substrate cleaning apparatus for cleaning the mounting substrate; and a conveying device for conveying the part supply body.

[0016] The mounting system of the embodiment includes: the plasma processing apparatus; a loading port for loading / unloading the part supply body and the mounting substrate; a supply body cleaning apparatus for cleaning the part supply body; a mounting substrate cleaning apparatus for cleaning the mounting substrate; and a conveying device for conveying the part supply body.

[0017] The pre-installation treatment method of the embodiment performs pre-installation treatment on the mating surface between the electronic component and the mounting substrate before mounting the electronic component on the mounting substrate. The pre-installation treatment method performs the following processes: a loading process in which a component supply body is loaded into a chamber, wherein a sheet with an adhesive portion on its surface is supported by a ring and the electronic component is adhered to the sheet; a determination process in which it is determined that the volatile components have evaporated from the component supply body during depressurization in the chamber where the component supply body has been loaded; a reaction gas introduction process in which, based on the determination process, the reaction gas is introduced from the gas inlet; and a surface treatment process in which the reaction gas is plasmaized by the plasma generator and the surface of the component supply body is treated by plasma.

[0018] The effects of the invention

[0019] The embodiments of the present invention can suppress the reduction of the bonding strength at the interface between the electronic component and the mounting substrate. Attached Figure Description

[0020] [ Figure 1 [ ] is an explanatory diagram showing the processing of each part of the installation system in the implementation method.

[0021] [ Figure 2 [ ] is a simplified perspective plan view showing the structure of the installation system in the implementation method.

[0022] [ Figure 3 [ ] is a cross-sectional view of the plasma processing apparatus according to the embodiment.

[0023] [ Figure 4 [This is a simplified structural diagram showing the supply body cleaning device and the mounting substrate cleaning device of the installation system.]

[0024] [ Figure 5[A] is a graph showing the pressure change inside the chamber of the removal device. (A) represents the case where the part supply body is subjected to plasma treatment. (B) represents the case where the chamber is empty and the case where the part supply body is contained without plasma treatment. (C) represents the case where the part supply body is heated based on (B). (D) represents the case where surface treatment is performed using plasma.

[0025] [ Figure 6 [] is a flowchart representing the action flow of the implementation method.

[0026] [ Figure 7 [ ] is a cross-sectional view of a plasma processing device with a composition detector.

[0027] [ Figure 8 [This is a cross-sectional view of a plasma processing device with a blower and a trap.]

[0028] [ Figure 9 [ ] is a cross-sectional view of a modified plasma processing apparatus.

[0029] [ Figure 10 [ ] is a simplified perspective plan view of an installation system with multiple joints in the mounting section. Detailed Implementation

[0030] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the drawings are schematic diagrams, and the dimensions, proportions, etc., of each part include exaggerated portions for ease of understanding.

[0031] [summary]

[0032] like Figure 1 , Figure 2 As shown, the mounting system 100 of this embodiment is an example of a system for mounting an electronic component E supplied by a component supplier TW onto a mounting substrate BW. The mounting system 100 includes a pre-mounting treatment unit X and a mounting unit Y. The pre-mounting treatment device 300, which carries out the pre-mounting treatment unit X, performs surface treatment (activation treatment, cleaning treatment) on the component supplier TW and the mounting substrate BW before mounting. The bonding device 180, which carries out the mounting unit Y, mounts the electronic component E (semiconductor chip) picked up from the component supplier TW that has undergone pre-mounting treatment onto the mounting substrate BW that has undergone pre-mounting treatment.

[0033] like Figure 1As shown, the component supply body TW is a component in which a sheet T with an adhesive portion on its surface is supported by a ring R, and an electronic component E is adhered to the sheet T. Regarding the component supply body TW of this embodiment, a wafer (semiconductor wafer) W is adhered to the center within the ring R of the sheet T. The wafer W is then miniaturized into the electronic component E. The electronic component E is, for example, a semiconductor chip. The sheet T is a thin, stretchable component containing resin, and its surface is provided with an adhesive portion having adhesive properties. This adhesive portion contains a UV-curable resin whose adhesive strength can be reduced by irradiation with ultraviolet (UV) light. The mounting substrate BW is used to mount (bond) the wafer (semiconductor wafer, substrate) W, which is detached from the component supply body TW.

[0034] The pre-installation processing apparatus 300 performs pre-installation processing on the mating surfaces of the electronic component E and the mounting substrate BW before mounting the electronic component E onto the mounting substrate BW. For example... Figure 2 As shown, the pre-mount processing apparatus 300 can perform pre-mount processing (surface treatment) on each of the component supply units TW and mounting substrates BW that are housed in a transport container F such as a front-opening unified pod (FOUP) or a front-opening shipping box (FOSB) and supplied from the equipment of the previous process. Additionally, the pre-mount processing apparatus 300 may include a cleaning device for cleaning the electronic components E or the mounting substrates BW.

[0035] The installation system 100 is configured by arranging multiple chambers 11b, which house various processing devices, around the base 11a of a box-shaped container that serves as a transport chamber, according to the processing requirements. That is, the pre-installation processing device 300 that supports the pre-installation processing unit X and the joining device 180 that supports the installation unit Y are composed of the chambers 11b that support various processing requirements.

[0036] The substrate 11a is configured such that a fan filter unit (FFU, not shown) is installed on the top plate of the substrate 11a, which generates a downflow of clean air, thereby maintaining a clean environment inside the substrate 11a. This FFU may also be installed in the chamber 11b if needed. A conveying device 190 is installed inside the substrate 11a.

[0037] Additionally, a loading port 11c for mounting the transfer container F is provided on the base 11a. The transfer container F, which holds unprocessed part supply bodies TW and mounting substrates BW, is mounted on the loading port 11c. One part supply body TW and one mounting substrate BW are each taken out of the transfer container F by the transfer device 190. The part supply body TW or mounting substrate BW taken out by the transfer device 190 are transferred into, processed, and removed from each chamber 11b.

[0038] The mounting system 100 of this embodiment may have a buffer device for temporarily storing the component supply body TW and the mounting substrate BW. The buffer device may be included in the pre-mounting processing unit X, or it may be included in the mounting unit Y.

[0039] More specifically, the mounting system 100 of this embodiment includes a plasma processing apparatus 101, a supply cleaning apparatus 110, a mounting substrate cleaning apparatus 120, an adjustment processing apparatus 130, a measuring apparatus 140, an alignment apparatus 150, a supply buffer apparatus 160, a mounting substrate buffer apparatus 170, a bonding apparatus 180, a conveying apparatus 190, and a control apparatus 200. Furthermore, the plasma processing apparatus 101, the supply cleaning apparatus 110, the mounting substrate cleaning apparatus 120, the adjustment processing apparatus 130, the measuring apparatus 140, the alignment apparatus 150, the supply buffer apparatus 160, the mounting substrate buffer apparatus 170, the conveying apparatus 190, and the control apparatus 200 constitute the pre-mounting processing section X, and the bonding apparatus 180 and the control apparatus 200 constitute the mounting section Y.

[0040] The plasma treatment apparatus 101 removes volatile components from the component supply body TW. The plasma treatment apparatus 101 performs surface treatment on the component supply body TW and the mounting substrate BW. The component supply body cleaning apparatus 110 cleans the component supply body TW, and the mounting substrate cleaning apparatus 120 cleans the mounting substrate BW. The adjustment treatment apparatus 130 reduces the adhesion of the sheet T of the component supply body TW. The measuring apparatus 140 positions the component supply body TW, and the alignment apparatus 150 positions the mounting substrate BW. The component supply body buffer apparatus 160 temporarily stores the component supply body TW, and the mounting substrate buffer apparatus 170 temporarily stores the mounting substrate BW. The bonding apparatus 180 detaches the electronic component E from the component supply body TW and mounts it onto the mounting substrate BW. The conveying apparatus 190 transports the component supply body TW and the mounting substrate BW between different parts and devices. Then, the control apparatus 200 controls each part of the mounting system 100. Details of each part will be described later.

[0041] [Plasma Processing Device]

[0042] The plasma treatment apparatus 101 is a surface treatment unit that uses plasma to treat the mating surfaces of the electronic component E and / or the mounting substrate BW before mounting the electronic component E onto the mounting substrate BW. Surface treatment is a process that activates and cleans the (mounted) surfaces (matting surfaces) of the electronic component E and the mounting substrate BW. Furthermore, the plasma treatment apparatus 101 also serves as a removal device for removing volatile components from the component supply TW before surface treatment using plasma.

[0043] like Figure 3As shown, the plasma processing apparatus 101 of this embodiment is provided with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60 in a chamber 10 configured as one of the chambers 11b, which is capable of depressurizing the interior. Furthermore, the plasma processing apparatus 101 includes a heating unit 70 and a pressure detector 80. Additionally, a transfer / inlet port LN for a component supply unit TW and a mounting substrate BW is provided in the chamber 10, and the transfer / inlet port LN is configured to be openable and closable via a stop gate SH. Figure 3 In the middle, the door blocking SH is represented by a dashed line.

[0044] (Platform)

[0045] The stage 20 supports the part supply body TW or the mounting base BW. In this embodiment, the stage 20 holds the part supply body TW or the mounting base BW, which is moved into the chamber 10 via a loading / unloading inlet LN opened by a stop door SH. In this embodiment, the stage 20 is configured as a placement area on the inner bottom surface of the chamber 10. In the following description, the direction from the stage 20 toward the part supply body TW is defined as upward or rising, and the direction from the part supply body TW toward the stage 20 is defined as downward or falling.

[0046] like Figure 3 As shown, a drive unit 21 is provided on the stage 20 to raise and lower the part supply body TW or the mounting substrate BW. The drive unit 21 has rods 21a and 21b, and a drive mechanism 21c. Rods 21a and 21b are vertical rod-shaped members that can move up and down and airtightly through the bottom of the chamber 10. Rods 21a are arranged in multiple positions to support the lower surface of the part supply body TW and are used to carry the part supply body TW relative to the chamber 10 for loading and unloading. Rods 21b are arranged in multiple positions to support the lower surface of the mounting substrate BW and are used to carry the mounting substrate BW relative to the chamber 10 for loading and unloading.

[0047] The drive mechanism 21c causes the part supply body TW and the mounting base plate BW to rise and fall by moving the rods 21a and 21b up and down.

[0048] (Gas inlet)

[0049] The gas inlet 30 is an opening for introducing the reaction gas into the depressurized chamber 10. The gas inlet 30 is located on the side of the chamber 10 so that the reaction gas can be introduced upwards onto the stage 20. The gas inlet 30 is connected to the supply device 31 via a pipe 31a.

[0050] The supply device 31 supplies a reactive gas into the chamber 10 through the gas inlet 30. For example, N2 gas is used as the reactive gas. By using the reactive gas, cleaning can be performed to remove organic matter from the surface of the object being processed, and the oxide film formed on the surface of the object being processed can be etched and the surface end caps can be activated using hydroxyl groups. Additionally, the reactive gas is also used to flush the chamber 10. Hereinafter, the space for supplying the reactive gas will be designated as the gas space GA.

[0051] (Plasma generator)

[0052] Plasma generator 40 plasmaizes the reactive gas. This plasmaization generates reactive species such as ions and free radicals. These reactive species are then irradiated onto the surfaces of the component supply TW and the mounting substrate BW, thereby activating or cleaning their respective surfaces. Figure 3 As shown, the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is disposed outside the chamber 10 and at a position corresponding to the upper part of the gas space GA. A window member 11d is disposed in the chamber 10 between the antenna 41 and the gas space GA. The window member 11d is a dielectric material such as quartz. The antenna 41 generates plasma P based on inductive coupling in the gas space GA via the window member 11d by applying a high-frequency voltage.

[0053] Power supply 42 is connected to antenna 41, applying a high-frequency voltage to antenna 41. Matching box 43 is a matching circuit connected between power supply 42 and antenna 41. Matching box 43 stabilizes the discharge of plasma P by matching the impedance of the input and output sides.

[0054] (mask)

[0055] like Figure 3 As shown, a mask 50 is disposed within the chamber 10. The mask 50 exposes the miniaturized wafer W (electronic component E) of the component supply body TW and covers a portion of the ring R and the wafer T. The mask 50 is configured to surround the central miniaturized wafer W within the ring R. More specifically, the mask 50 is an annular member that covers the exposed surface of the wafer T and the upper surface of the ring R, excluding the area where the miniaturized wafer W is attached.

[0056] At the lower part of the mask 50, a plurality of support shafts 50a protrude along the inner side of the outer circumference of the mask 50. The support shafts 50a are inserted into holes 11e provided at the bottom of the chamber 10 in a way that allows them to be raised and lowered. A stop 11f is provided at the upper edge of the hole 11e. The stop 11f is a protrusion formed in a way that restricts the descent of the mask 50 to a predetermined height position. In this embodiment, when the mounting substrate BW is placed on the mask, the stop 11f maintains the height of the mask 50 at the same height as when the mask 50 covers the part supply body TW.

[0057] The mask 50 is configured to be raised and lowered by a drive unit 51. The drive unit 51 has a rod 51a and a drive mechanism 51b. The rod 51a is a vertically oriented rod-shaped member that can move up and down and airtightly through the bottom of the chamber 10.

[0058] Multiple rods 51a are arranged at positions that can support the lower surface of the mask 50. In this embodiment, three rods 51a protrude through holes 11e and contact three support shafts 50a respectively. That is, the hole 11e has a through-hole portion through which the rods 51a pass. Furthermore, in Figure 3 To facilitate understanding of the operation, the support shaft 50a and rod 51a, which are not shown in the actual cross-section, are illustrated. The drive mechanism 51b moves the mask 50 up and down by moving the rod 51a up and down. In addition, another support shaft is forced downward by a force-applying member, which forces the mask 50 downward.

[0059] (Exhaust port)

[0060] like Figure 3 As shown, the exhaust port 60 is an opening for discharging gas (e.g., reactant gas) from the chamber 10. In this embodiment, the exhaust port 60 is provided on the side of the chamber 10. The exhaust port 60 is connected to a pressure reducing device 61, such as a vacuum pump, via a pipe 61a. The pressure reducing device 61 reduces the pressure inside the chamber 10 via the exhaust port 60. In addition, reactant gas is discharged from the chamber 10. Furthermore, the pressure reducing device 61 discharges volatile components that evaporate from the part supply TW before surface treatment using plasma within the chamber 10.

[0061] (Heating section)

[0062] The heating unit 70 heats the component supply TW before plasma treatment within the chamber 10, thereby promoting the evaporation of volatile components from the component supply TW. In this embodiment, the heating unit 70 for heating the component supply TW is provided on the stage 20. More specifically, the heating unit 70 is built into the chamber 10 below the stage 20. Thus, when the component supply TW is supported by the stage 20, the heating unit 70 and the surface of the component supply TW opposite to the surface where the wafer W is attached face each other. The heating unit 70 is, for example, a heater that generates heat by energizing, and a plurality of cylindrical heaters are arranged thereon. Figure 3 The middle part is a cylindrical shape extending along the view direction.

[0063] The heating temperature of the heating section 70 is the temperature at which the volatile components evaporate from the part supply body TW, and is a temperature at which the sheet T or the adhesive part is not damaged (burned, melted, softened, etc.), for example, 40°C to 200°C, preferably 40°C to 80°C. The temperature varies depending on the material of the sheet T or the adhesive part. Therefore, it is preferable to determine this temperature in advance through experiments or the like.

[0064] (Pressure detector)

[0065] The pressure detector 80 is a pressure gauge that detects the pressure inside the chamber 10. The pressure detector 80 is connected to the detection port 11j provided in the chamber 10. In addition, the pressure detector 80 is connected to the control device 200, which will be described later, and the control device 200 controls the pressure reducing device 61 and the heating unit 70 based on the pressure detected by the pressure detector 80.

[0066] [Supply Body Cleaning Device]

[0067] The supply body cleaning apparatus 110 is a cleaning apparatus for cleaning electronic components E before and / or after plasma treatment performed using the plasma treatment apparatus 101. In this embodiment, the supply body cleaning apparatus 110 is a processing chamber for cleaning the component supply body TW. The supply body cleaning apparatus 110 performs a cleaning process using a liquid such as water to remove particles present on the component supply body TW. In this embodiment, a cleaning liquid L is used to clean particles remaining on the plasma-treated component supply body TW or particles generated during plasma treatment. The cleaning targets are the surfaces of the electronic components E, the adhesion surfaces between the electronic components E, and the surfaces of the sheets T; particles adhering to them are cleaned and removed. Figure 4 As shown, the supply body cleaning device 110 includes: a cleaning chamber 111 (cavity 11b), which is a container for cleaning treatment inside; a support 112 for supporting the part supply body TW; a rotating mechanism 113 for rotating the support 112; a cup 114 for receiving the scattered cleaning liquid L from around the part supply body TW; and a supply unit 115 for supplying the cleaning liquid L.

[0068] The cleaning chamber 111 is provided with an opening 111a for loading / unloading the part supply body TW. The opening 111a is configured to be opened and closed via a stop gate 111b. The part supply body TW is loaded / unloaded relative to the cleaning chamber 111 by the conveying device 190 through the opening 111a opened via the stop gate 111b. At this time, the cup 114 is retracted by a lifting mechanism (not shown). An eccentric pin is included on the upper surface of the support 112 to rotatably hold the outer periphery of the part supply body TW. The supply section 115 is provided with a nozzle 115a for dripping cleaning fluid L and a moving mechanism 115b for moving the nozzle 115a.

[0069] Cleaning is performed by supplying cleaning fluid L to the surface of the part supply body TW, which is held by the eccentric pin of the supported portion 112 through the nozzle 115a and rotated by the rotating mechanism 113. The cleaning fluid L is, for example, deionized water (DIW). In this case, water rinsing is performed while simultaneously imparting hydroxyl groups to the surface of the electronic part E.

[0070] Furthermore, although not shown, the rotation mechanism 113 of the supply body cleaning device 110 includes an extension device. The extension device elongates (expands) the sheet T of the component supply body TW supported by the support portion 112 to increase the spacing between the electronic components E. With this configuration, the supply body cleaning device 110 also cleans particles present in the spacing between the electronic components E.

[0071] [Install substrate cleaning equipment]

[0072] The mounting substrate cleaning apparatus 120 is a cleaning apparatus that cleans the mounting substrate BW before and / or after plasma treatment performed using the plasma treatment apparatus 101. In this embodiment, the mounting substrate cleaning apparatus 120 is a processing chamber for cleaning the mounting substrate BW. The mounting substrate cleaning apparatus 120 performs a cleaning process using a liquid such as water to remove particles present on the mounting substrate BW. In this embodiment, a cleaning solution L is used to clean particles remaining on the plasma-treated mounting substrate BW or particles generated during plasma treatment. The mounting substrate cleaning apparatus 120 and... Figure 4 The supply body cleaning apparatus 110 shown also includes: a cleaning chamber 111, which is a container for cleaning treatment inside; a support 112, which supports the mounting substrate BW; a rotation mechanism 113, which rotates the support 112; a cup 114, which receives the spilled cleaning liquid L from around the mounting substrate BW; and a supply unit 115, which supplies the cleaning liquid L. For example, when DIW is used as the cleaning liquid L, water cleaning can be performed, and hydroxyl groups can be applied to the surface of the mounting substrate BW at the same time.

[0073] [Adjust processing device]

[0074] The adjustment processing device 130 adjusts the sheet T of the cleaned parts supply body TW by irradiating it with UV light to reduce the adhesion of the sheet T. For example... Figure 1 As shown, the adjustment processing apparatus 130 has an irradiation device 131, which irradiates UV light by scanning the entire area below the housed part supply body TW with a UV light source.

[0075] [Measurement Device]

[0076] The measuring device 140 positions the part supply body TW. The measuring device 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the part supply body TW so that the center of the part supply body TW is aligned with a reference position set inside.

[0077] [Alignment device]

[0078] The alignment device 150 positions the mounting substrate BW. The alignment device 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW is aligned with a reference position set inside.

[0079] [Supply body buffer device]

[0080] The supply body buffer device 160 temporarily houses the part supply body TW before it is moved into the engagement device 180. For example... Figure 1 As shown, the supply body buffer device 160 has a storage chamber 161, which is capable of stacking and storing multiple component supplies TW at intervals.

[0081] [Installation of substrate buffer device]

[0082] The mounting substrate buffer device 170 temporarily stores the mounting substrates BW before they are moved into the bonding device 180. The mounting substrate buffer device 170 has a storage compartment 171, which is capable of stacking and storing multiple mounting substrates BW at intervals.

[0083] [Connecting device]

[0084] The bonding device 180 is included in the mounting section Y and is a processing chamber that detaches the electronic component E from the component supply body TW processed by the plasma processing apparatus 102 and mounts it on the mounting substrate BW. The bonding device 180 includes a supply mechanism, a pick-up mechanism, and a mounting mechanism (not shown). The bonding device 180 picks up the electronic component E from the component supply body TW, which is moved into the supply mechanism by the conveying device 190, and transfers it to the mounting mechanism. The electronic component E is mounted on the mounting substrate BW, which is moved into the bonding device 180 by the conveying device 190, via the mounting mechanism. Furthermore, as... Figure 1 As shown, the bonding device 180 of this embodiment reverses the picked-up electronic component E and mounts the pre-installation treated surface onto the surface of the pre-installation treated mounting substrate BW.

[0085] [Conveying device]

[0086] The conveying device 190 conveys the component supply TW and the mounting substrate BW between the loading port 11c and each chamber 11b, between each chamber 11b, between the supply body buffer device 160 and the mounting substrate buffer device 170 and the joining device 180. That is, the conveying performed by the conveying device 190 also includes conveying the component supply TW and the mounting substrate BW between the pre-installation processing device X and the mounting section Y. Figure 2As shown, the conveying device 190 includes a conveying robot 191 and a moving mechanism 192. The conveying robot 191 is a dual-arm type, with a pair of robotic arms 191a supporting the part supply body TW and the mounting base plate BW respectively. The moving mechanism 192 moves and positions the conveying robot 191 at the loading port 11c, each chamber 11b, and the joining device 180. The robotic arms 191a move the part supply body TW and the mounting base plate BW into and out of each conveying container F, each chamber 11b, and the joining device 180.

[0087] [Control Device]

[0088] The control device 200 is a computer that controls various parts of the mounting system 100. The control device 200 includes: a processor to execute programs; a memory to store various information such as programs or operating conditions; and drive circuits to drive each component. Specifically, the control device 200 controls the plasma processing device 101, the supply cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the measuring device 140, the alignment device 150, the supply buffer device 160, the mounting substrate buffer device 170, the bonding device 180, and the conveying device 190. In other words, the control device 200 is also a computer that controls various parts of the pre-mounting processing unit X and the mounting unit Y.

[0089] [Regarding the reasons for the decrease in bond strength]

[0090] In direct bonding where electronic components E are directly bonded to the substrate without the use of bonding components such as solder bumps, the bond strength may be reduced. Various factors can affect bond strength, and one contributing factor is insufficient pretreatment before mounting. Specifically, it is believed that factors hindering bonding may remain at the bonding surfaces between the electronic components and the mounting substrate.

[0091] Therefore, factors in the pretreatment process were investigated. Among these, the effect of plasma treatment was studied. The results showed that pressure changes during plasma treatment differed between plasma treatment of the part supply body (TW) and plasma treatment of the mounting substrate (BW). In the plasma treatment of the part supply body (TW), pressure changes that were not observed in the case of plasma treatment of the mounting substrate (BW) occurred towards the end of the surface treatment using plasma.

[0092] Figure 5 The diagram shows an example of pressure changes during decompression within chamber 10. Figure 5This is a graph with pressure on the vertical axis and time on the horizontal axis. Surface treatment using plasma is performed in a depressurized environment. Therefore, the chamber 10 is first depressurized, and surface treatment using plasma begins when a predetermined pressure is reached. In this embodiment, the predetermined pressure is referred to as the base pressure.

[0093] Figure 5 (A) indicates the pressure change (displacement) within chamber 10 during plasma treatment of the part supply body TW in the plasma processing apparatus 101. For example... Figure 5 As shown in (A), if the pressure inside chamber 10 is reduced to the base pressure, then plasma-enhanced reactive gas is introduced into chamber 10. By introducing the reactive gas, the pressure inside chamber 10 rises to the surface treatment pressure.

[0094] Moreover, such as Figure 5 As shown by the straight line roughly on the front side in (A), the surface treatment pressure is maintained at a constant level through the balance between exhaust and introduction. In this state, electricity is applied to the reactive gas to ionize it. The part supply body TW, which is transported into the plasma treatment apparatus 101, is surface treated using the active species generated by the plasmaization of the reactive gas. After a predetermined treatment time t0, the surface treatment using plasma is ended. The supply of reactive gas is stopped, and the application of electricity is stopped. Then, the pressure inside the chamber 10 is reduced by continuing to exhaust. Then, exhaust is also stopped and the atmosphere is introduced, thereby increasing the pressure inside the chamber 10 to atmospheric pressure. Thus, the plasma treatment ends.

[0095] Figure 5 In (A), the pressure variation observed at the end of the surface treatment of the part supply body TW is indicated by a circle. This variation in surface treatment pressure was not observed when the mounting substrate BW was surface treated. The inventors of this application focused on the amplitude variation caused by the increase or decrease in pressure during the surface treatment.

[0096] The component supply body TW and the mounting substrate BW have different structures. The component supply body TW is a component on a sheet T mounted on a ring R, on which miniature wafers (semiconductor wafers) W are attached. In contrast, the mounting substrate BW is a substrate containing only semiconductor wafers. The difference lies in the presence or absence of the sheet T. Therefore, it is presumed that pressure variations during the surface treatment of the component supply body TW are caused by the sheet T.

[0097] The adhesive portion of sheet T uses a component that holds the electronic component E and whose adhesiveness disappears when the electronic component E is peeled off during installation. This component uses a curable resin such as a UV-curable resin or a thermosetting resin. During installation, just before the electronic component E is peeled off sheet T, the resin is cured, causing the adhesiveness to disappear. Therefore, it is in an uncured state before this process to hold the electronic component E. Moisture easily dissolves in the uncured resin. Furthermore, sheet T itself is also made of resin and is hygroscopic.

[0098] If a part supply body TW with this type of component is subjected to plasma treatment, firstly, with depressurization, highly volatile adhesive parts, moisture absorbed by the sheet T, water dissolved in the resin, solvent components, and other volatile components begin to evaporate. If surface treatment using plasma begins, the temperature of the part supply body TW rises due to the heat of the plasma. As a result, the temperature of the surface-treated sheet T, or the adhesive parts on its surface, i.e., the hardened resin, gradually rises, and subsequently, moisture absorbed by the sheet T, water or solvent components dissolved in the resin, and the resin components themselves evaporate as gases. Therefore, it is believed that after a certain period of surface treatment, pressure changes are caused by the evaporating gases (volatile components).

[0099] Furthermore, if volatilization occurs from the sheet T or the adhesive portion, i.e., the hardened resin, its temperature decreases due to the heat of vaporization, thus stopping the volatilization. If volatilization stops, volatilization will resume due to the heat of the plasma. It is speculated that vibrational pressure variations are observed through this repetition.

[0100] The volatile components evaporating from the resin-containing sheet T or adhesive portion of the component supplier TW generally contain carbon. Furthermore, substances with low molecular weight tend to be volatile. It is speculated that if volatile components containing low molecular weight carbon evaporate from the component supplier TW during plasma surface treatment, they are ionized by being introduced into the plasma environment. The ionized volatile components collide with and react with a portion of the surface of the electronic component E. It is speculated that a compound or carbon-containing functional group is formed on a portion of the surface of the electronic component E that reacts with the ionized volatile components; this portion is inert. The compound or carbon-containing functional group cannot be removed even by cleaning with the supplier cleaning device 110. As a result, it is speculated that a decrease in the bonding strength at the interface between the component supplier TW and the mounting substrate BW occurs.

[0101] That is, the reduction in bonding strength takes into account various factors. One factor is the inadequate surface treatment of the component supply body TW using plasma, which is attributed to volatiles emanating from the sheet T or the adhesive portion. This reduction in bonding strength can be attributed to poor pre-assembly treatment. Alternatively, it can be attributed to poor installation treatment.

[0102] Here, in Figure 5 In (B), a dashed line represents the pressure change when the chamber 10 is vented and depressurized in the same manner as plasma processing, while a dashed line represents the pressure change when the part supply body TW is housed in the chamber 10, without surface treatment, and the pressure is vented and depressurized in the same manner. Although not illustrated for ease of observation, the pressure change when the mounting substrate BW is housed in the chamber 10 and depressurized in the same manner is the same as when the chamber 10 is empty. That is, it is the same as the change shown by the dashed line.

[0103] like Figure 5 As shown in (B), without surface treatment, venting continues, so the pressure in both the component supply body TW and the mounting substrate BW exceeds the base pressure and continues to decrease. Furthermore, although the pressure change in the component supply body TW is consistent with that in the mounting substrate BW when the chamber 10 is empty, the pressure changes in the component supply body TW and the mounting substrate BW are inconsistent.

[0104] From the start of venting, within the same elapsed time, the pressure in chamber 10 containing the component supply body TW is consistently higher than that in chamber 10 containing the mounting substrate BW. As described above, this can be interpreted as volatile components evaporating from the component supply body TW. That is, evaporation occurs from the component supply body TW simultaneously with pressure reduction, and the pressure rises due to this evaporation. Since the pressure from pressure reduction is added to the pressure from evaporation, the amount of pressure increase corresponding to the amount of evaporation can be inferred. Figure 5 In case (B), the pressure difference increases near the base pressure. This indicates that the amount of evaporation from the component supply TW increases near the base pressure. This is believed to be because more volatile components evaporate in pressure regions above the base pressure, while less volatile components also evaporate at pressures below the base pressure.

[0105] [Eliminating obstacles to the connection]

[0106] Based on the above observations and speculations, it can be concluded that in order to eliminate one of the obstacles to bonding, it is sufficient to remove volatile components from the component supply TW before surface treatment. Therefore, in the plasma treatment apparatus 101 of the pre-installation treatment device 300 of this embodiment, the mounting system 100 removes volatile components from the component supply TW before activating and cleaning the surface of the electronic component E. In addition, in the plasma treatment apparatus 101 of this embodiment, in order to promote the volatilization of volatile components from the component supply TW, the heating unit 70 heats the component supply TW in the depressurized chamber 10.

[0107] In other words, to prevent the volatilization of unwanted components during plasma-based surface treatment, the amount of volatile components generated from the component supplier TW is reduced to a level that does not affect the bonding strength before surface treatment. That is, it is not necessary to remove all volatile components. This operation is called a removal process. Furthermore, "not affecting the bonding strength" here means that the bonding strength at the interface between the component supplier TW and the mounting substrate BW will not decrease compared to the required specified strength. The specified strength is the bonding strength obtained when, after temporary bonding during mounting treatment and annealing, the interface between the component supplier TW and the mounting substrate BW is finally bonded in a substantially integrated form via covalent bonds of oxygen atoms. This relationship between bonding strength and volatilization amount can be determined in advance through experiments, etc. The volatilization amount can be observed by the pressure within the chamber 10, as explained below.

[0108] Figure 5 (C) shows an example of the pressure change during decompression in the chamber 10 of the plasma processing apparatus 101 of this embodiment. Figure 5 (C) The dashed line on the curve and Figure 5 (B) Same, representing the pressure change during decompression in an empty chamber 10. Therefore, it represents the pressure change when there is no component supply TW or volatile components in the chamber 10. Figure 5 The dashed line in the curve of (C) is also... Figure 5 (B) Same, indicating the pressure change when there is a component supply body TW and volatile components in chamber 10. Figure 5 The solid line in graph (C) represents the pressure change when the part supply body TW (containing volatile components) is present in chamber 10 and heated by the heating unit 70 to further promote volatilization. Furthermore, the exhaust volume is constant in all states.

[0109] like Figure 5 As shown in (C), in any case, starting from the decompression, the pressure inside chamber 10 decreases sharply and gradually reaches a certain level. As shown by the dashed or solid lines, in the presence of volatile components such as the component supply body TW, starting from the decompression of the pressure inside chamber 10 to 4000 Pa, the pressure decrease becomes gradual relative to the empty case (dotted line), resulting in slight pressure fluctuations. This is believed to be mainly due to the evaporation of moisture adsorbed on sheet T or the adhesive portion. Therefore, along with the evaporation of moisture, the pressure inside chamber 10 decreases simultaneously.

[0110] like Figure 5As shown by the solid line in graph (C), the pressure decrease becomes more gradual when heated compared to the empty state (dotted line). This is believed to be because the moisture evaporates more rapidly due to heating. Of course, the evaporating components are not limited to moisture; other volatile components, such as solvents from the resin, are also considered.

[0111] like Figure 5 As shown by the dashed or solid line in the graph of (C), when the part supply body TW is present in chamber 10, i.e., when volatile components are present, a period arrives where the pressure decrease becomes more gradual as decompression progresses. Moreover, during this period, the pressure fluctuates erratically. This tendency is more pronounced when heating is performed compared to when no heating is performed. It is believed that as the pressure decreases, less volatile components evaporate in large quantities, thus slowing down the pressure decrease. Regarding this evaporation, it is believed that the reason is increased evaporation from the adhesive portion of sheet T or its surface. It is believed that the adhesive portion is uncured hardened resin, and air or moisture drawn into it flows out of the resin, solvent components or the resin itself also evaporate, etc.

[0112] Here, the reason why the pressure drop becomes more gradual during the period when the volatile components continue to evaporate from the component supply body TW compared to the case where there is no such evaporation is explained using the following formula. If the pressure in the chamber 10 is set as P, the small amount of gas flowing into the chamber 10 (leakage) is set as Le, the amount of volatile components evaporating from the component supply body TW is set as Vo, and the exhaust volume of the pressure reducing device 61 (exhaust device) is set as Ex, then the following relationship (1) holds.

[0113] P = Le + Vo - Ex (1)

[0114] In the absence of volatile components evaporating from the component supply body TW, P = Le - Ex, and the pressure becomes constant when Le and Ex are in equilibrium. In the presence of volatile components evaporating, according to equation (1), the pressure in chamber 10 is higher than usual by an amount of Vo.

[0115] The amount of Vo is related to the following four events, which repeatedly increase or decrease.

[0116] (a) As the pressure inside chamber 10 decreases, the boiling point also decreases.

[0117] (b) Boiling point varies depending on the volatile components.

[0118] (c) When the volatile components vaporize, they take away the heat of vaporization from the surroundings (e.g., the sheet T or the adhesive part), thus lowering the ambient temperature.

[0119] (d) Even with the same composition, there are components that are easily volatile and components that are not easily volatile (for example, volatile components adsorbed on the surface or adhesive portion of sheet T are easily volatile, while volatile components adsorbed inside sheet T or adhesive portion are not easily volatile). Therefore, with a fixed inflow rate Le and exhaust rate Ex, P changes according to the change in Vo.

[0120] Specifically, according to event (a), the pressure inside chamber 10 decreases, thereby lowering the boiling point of the volatile component, and the volatile component begins to evaporate. However, according to event (c), due to the decrease in temperature of sheet T or the adhesive portion, the temperature of the volatile component also decreases. Thus, it falls below the boiling point of the volatile component as the pressure decreases, and evaporation stops. However, by further decreasing the pressure inside chamber 10, event (a) occurs again, the boiling point of the volatile component decreases further, and the volatile component begins to evaporate again. Through this repetition, the amount of Vo also repeatedly increases and decreases. In addition, events (b) and (d) are also related, so within a certain pressure range, different volatile components repeatedly begin and stop evaporating. Therefore, the amount of Vo will repeatedly increase and decrease in a more complex manner.

[0121] Furthermore, in the plasma processing using the plasma processing apparatus 101, if a reactive gas is introduced for surface treatment using plasma, the pressure inside the chamber 10 increases, thus increasing the boiling point of the volatile components, and the volatilization of the volatile components is temporarily stopped. Then, the part supply body TW is heated using the heat of the plasma, and if the boiling point of the volatile components is exceeded, volatilization occurs.

[0122] If the evaporation of volatile components continues, the amount of evaporation decreases or disappears, thus the rate of pressure reduction will increase again through exhaust. Figure 5 (C) shows, within the dashed and solid lines, the pressure line is nearly horizontal, the pressure decrease becomes slow, and after a pulsating pressure change, the slope of the pressure decrease becomes steeper. At the point where the slope becomes steeper, it can be said that the evaporation of the volatile components has almost disappeared. In other words, at this point in time, the volatile components have been removed from the component supply body TW.

[0123] That is, the TW component supply body can be exposed to a reduced pressure environment or further heated before surface treatment using plasma to promote the volatilization of volatile components and remove volatile components in advance.

[0124] Based on the above, in the plasma processing apparatus 101 that houses the component supply body TW, the point in time when the pressure reduction rate and reduction rate decreases and then increases during the depressurization of the chamber 10 is determined to be the point at which the evaporation of the component supply body TW stops, i.e., the volatile components are removed, and then surface treatment is performed using plasma, thereby preventing reactions that would hinder bonding from occurring during surface treatment.

[0125] Furthermore, insufficient removal treatment will result in the volatilization of unwanted components during plasma surface treatment, affecting bond strength. Excessive removal treatment, on the other hand, will lead to reduced productivity. Therefore, proper control of the end point (terminus) of the removal treatment is necessary. That is, the end point of the removal treatment is the time point at which the amount of volatile components volatilized from the part feeder TW decreases to a level that does not affect the bond strength.

[0126] In order to rapidly reduce the amount of volatile components evaporating from the component supply TW to a level that does not affect the bonding strength, the evaporation of volatile components is promoted. Therefore, in the plasma processing apparatus 101, the component supply TW is subjected to treatment by exposure to a reduced pressure environment or treatment by exposure to a reduced pressure environment while being heated, prior to surface treatment.

[0127] In the plasma processing apparatus 101, heating is performed simultaneously with depressurization, such as Figure 5 As shown by the solid line in graph (C), the pressure within chamber 10 changes. Simultaneously with the decrease in pressure, moisture evaporates first from the adhesive portion of sheet T or its surface. Therefore, in conjunction with... Figure 5 (C) Under the same exhaust volume where no volatile components are present, the pressure decreases more gradually than when no volatile components are present. Evaporation mainly occurs from the adhesive portion after and / or simultaneously with the evaporation of moisture. Therefore, due to the increased evaporation, the pressure decrease becomes more gradual, and the amplitude of pressure increases and decreases becomes more drastic. After the time range where the slope of the pressure change is small and the amplitude becomes drastic, the amplitude of pressure increases and decreases decreases, and the time when the pressure drops sharply arrives. At this point, it means that evaporation from the component supply body TW has ended. Thus, the time point at which the slope of the pressure change changes is switched is taken as the end point (end point) of the removal process. Furthermore, the pressure in chamber 10 at the end point, from the time t1 when depressurization begins, is set as pressure Ep1. Figure 5 (C) is represented by a circle that is painted white.

[0128] In the plasma processing apparatus 101 of this embodiment, the control device 200 determines that the evaporation of volatile components from the component supply TW during depressurization within the chamber 10 is complete. The control device 200 determines that the evaporation of volatile components is complete when the pressure within the chamber 10, detected by the pressure detector 80, reaches a preset pressure. Simultaneously with the start of depressurization in the chamber 10, the control device 200 begins heating using the heating unit 70. Based on the determination that the evaporation of volatile components is complete, the control device 200 stops heating the heating unit 70, ending the removal process. This pressure can be set to the final pressure Ep1. This pressure is, for example, 3 Pa to 50 Pa, and is preset in the memory of the control device 200. Based on the determination that the evaporation of volatile components is complete, the control device 200 introduces reactive gas through the gas inlet 30, causing the plasma generator 40 to plasmaize the reactive gas.

[0129] In the plasma processing apparatus 101, under conditions where no heating is applied and the plasma is only exposed to a reduced pressure environment, such as... Figure 5 The dashed line in graph (C) shows the pressure change within chamber 10. As the pressure decreases, moisture evaporates. Therefore, at the same exhaust volume as when there are no volatile components (represented by a dashed line), the pressure decreases more gradually than when there are no volatile components. Specifically, compared to the case with accompanying heating, the amount of evaporation per hour is less, and the pressure decreases more rapidly.

[0130] After and / or simultaneously with the evaporation of moisture, volatile components originating from the sheet T or adhesive portion evaporate. Consequently, due to the increased evaporation, the pressure decrease becomes gradual, and the time range during which the amplitude of pressure increases and decreases becomes drastic. After a period of time during which the amplitude of the pressure change is drastic and the slope decreases, the time period arrives where the amplitude of the pressure increase and decrease decreases, and the pressure decrease becomes rapid. In this case, the time point at which the slope of the pressure change switches (the time t2 from the start of decompression) is also taken as the endpoint. Figure 5 (C) The pressure Ep2 at the time point is represented by a white circle. The pressure Ep2 is, for example, 0.01 Pa to 10 Pa. The pressure Ep2 is preset as a set pressure in the memory of the control device 200.

[0131] In this case, the plasma processing device 101 only needs to be set to... Figure 3The structure shown can be simplified by removing the heating element 70. Furthermore, the control device 200 controls each part of the plasma processing apparatus 101 based on the pressure detected by the pressure detector 80. The control device 200 controls each part of the plasma processing apparatus 101 and begins surface treatment when the pressure detected by the pressure detector 80 reaches a preset set pressure. Alternatively, surface treatment begins when the rate of pressure reduction detected by the pressure detector 80 is lower than immediately after venting and then rises. During the decompression period before surface treatment, volatile components volatilized from the part supply TW, which is moved into the chamber 10 and supported by the stage 20, are discharged through the decompression device 61.

[0132] Furthermore, the control device 200 controls the drive unit 51 to switch the position of the mask 50 before and after the evaporation of the volatile component is completed. Before it is determined that the evaporation of the volatile component from the part supply body TW is completed, the mask 50 is moved away from the sheet T to the maximum extent, and when it is determined that the evaporation of the volatile component from the part supply body TW is completed, the mask 50 is moved away from the sheet T to the minimum extent.

[0133] [action]

[0134] In addition to the above Figures 1-5 In addition, refer to Figure 6 The flowchart below explains the operation of the mounting system 100 of this embodiment as described above. A mounting method for mounting electronic components E onto the mounting substrate BW via the following process is also a form of this embodiment. Furthermore, the following description is based on... Figure 6 The flowchart shows that each process includes states that occur simultaneously and in parallel.

[0135] like Figure 2 As shown, a transport container F containing a component supply body TW and a transport container F containing a mounting substrate BW are mounted on a loading port 11c. A transport robot 191 receives the component supply body TW from the transport container F in the loading port 11c and transports the component supply body TW to the plasma processing device 101.

[0136] The plasma treatment apparatus 101 removes volatile components from the adhesive portions or sheet T in the part supply body TW (volatile component removal process: step S100). First, the drive unit 51 raises the rod 51a, causing the mask 50 to rise against the force applied by the force-applying member. At this time, the mask 50 is positioned as far away from the sheet T as possible. Figure 3(The state is shown by the dashed line). By raising the mask 50, the mask 50 retracts in a manner that does not obstruct the entry of the manipulator 191a of the transfer robot 191 into the chamber 10. Next, the stop door SH opens, and the manipulator 191a of the transfer robot 191, which supports the part supply body TW, is inserted from the loading / unloading inlet LN. The manipulator 191a positions the part supply body TW above the lever 21a.

[0137] Drive mechanism 21c raises rod 21a, lifting the part supply body TW from robot arm 191a, which then retracts. After robot arm 191a retracts, gate SH closes. Drive mechanism 21c lowers rod 21a, placing the part supply body TW onto stage 20. At this time, rod 51a does not lower, and mask 50 remains raised.

[0138] In this state, the pressure reducing device 61 begins to exhaust air. Simultaneously, the heating unit 70 begins to heat. This depressurizes the chamber 10 while simultaneously heating the part supply body TW, causing volatile components to evaporate from the part supply body TW. When the pressure detected by the pressure detector 80 reaches the set pressure, the heating unit 70 stops heating. Heating by the heating unit 70 is stopped because the part supply body TW will also be heated during the next plasma-based surface treatment, and evaporation during surface treatment would hinder the process. Furthermore, this is to prevent the adhesive portions or sheets T of the part supply body TW from becoming too hot and melting or softening. If the heating temperature of the heating unit 70 is close to the heat resistance temperature or glass transition temperature of the adhesive portions or sheets T, a standby time can be set after heating by the heating unit 70 stops.

[0139] Next, the plasma treatment apparatus 101 activates and cleans the surface of the electronic component E through surface treatment using plasma (supply body surface treatment process: step S101). That is, while the depressurization device 61 is in a vacuum state by continuing to exhaust air from the chamber 10, as... Figure 3 As shown, the drive unit 51 lowers the rod 51a. When the rod 51a lowers, the mask 50 lowers due to the force applied by the force-applying member. The mask 50 contacts the ring R and stops, covering the ring R and the sheet T. That is, the mask 50 is positioned with minimal separation from the sheet T.

[0140] In the stated state, such as Figure 3As shown, the supply device 31 supplies the reactive gas to the gas space GA, and the power supply 42 applies high-frequency power to the antenna 41, thereby generating plasma P in the gas space GA. By plasmaifying the reactive gas, reactive species such as ions and free radicals are generated, which activate and clean the surface of the electronic component E. The reactive gas is discharged from the exhaust port 60 by the pressure reducing device 61. Reactive species directed towards the outer periphery of the wafer W, i.e., the vicinity between the ring R and the electronic component E, are prevented from contacting the exposed surfaces of the ring R and the wafer T by the mask 50 (indicated by arrows in the figure). Therefore, etching of the exposed surfaces of the ring R and the wafer T by the reactive species can be suppressed. When the control device 200 determines that the surface treatment time (t0) has elapsed, it terminates the surface treatment using plasma. Thus, the plasma treatment device 101 activates and cleans the surface of the component supply body TW through surface treatment (supply body surface treatment process: step S101).

[0141] The pressure change within chamber 10 during surface treatment using plasma in the plasma process is shown in the figure. Figure 5 (D) In ​​the case of using Ep1 as the endpoint, as shown by the solid line, after the pressure reaches Ep1, the reactive gas is introduced into chamber 10, and the pressure inside chamber 10 is adjusted to the surface treatment pressure. Then, surface treatment is performed during the preset surface treatment time t0. Alternatively, in the case of using Ep2 as the endpoint, as shown by the dashed line, after the pressure reaches Ep2, the reactive gas is introduced into chamber 10, and the pressure inside chamber 10 is adjusted to the surface treatment pressure. Then, surface treatment is performed during the preset surface treatment time t0.

[0142] After the surface treatment of the part supply body TW, the drive unit 51 raises the rod 51a. The drive unit 51 causes the mask 50 to rise against the force applied by the force-applying member, thereby moving the mask 50 away from the ring R. The part supply body TW is lifted by raising the rod 21a via the drive mechanism 21c. The stop gate SH opens, and the robot arm 191a is inserted through the loading / unloading inlet LN. The drive mechanism 21c lowers the rod 21a, loading the part supply body TW and transferring it to the robot arm 191a, one of the two arms. Then, the robot arm 191a removes the part supply body TW from the loading / unloading inlet LN.

[0143] Furthermore, during the surface treatment of the part supply body TW, the transfer robot 191 receives the mounting substrate BW from the transfer container F to another robotic arm 191a in the twin arms. The transfer robot 191 receives the part supply body TW from the rod 21a of the plasma processing device 101 and passes the mounting substrate BW to the plasma processing device 101. The plasma processing device 101 activates and cleans the surface of the mounting substrate BW by surface treatment using plasma (mounting substrate surface treatment step: step S102).

[0144] The plasma treatment process for mounting substrate BW is the same as the surface treatment process for the supply body. However, when mounting substrate BW, the volatile component removal process is not performed; only surface treatment using plasma is performed.

[0145] The transfer robot 191 transfers the surface-treated component supply TW to the support 112 of the component cleaning device 110. The component cleaning device 110 rotates the surface-treated component supply TW transferred to the support 112 via the support 112 and the rotation mechanism 113, while simultaneously supplying cleaning fluid L to the component supply TW. This cleans the component supply TW (component cleaning process: step S103). This removes particles generated by the etching effect of the plasma-based surface treatment. Furthermore, at this time, the plate T of the component cleaning device 110 is expanded by the expansion device, and cleaning is performed with the spacing of the electronic components E increased. Cleaning fluid L is supplied for cleaning, followed by high-speed rotation to splatter the cleaning fluid L and allow for drying. After drying, the rotation of the support 112 is stopped, the expansion device releases the plate T, causing it to retract to its original state, restoring the spacing of the electronic components E to its original position.

[0146] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 101 is completed, the transfer robot 191 receives the mounting substrate BW from the plasma processing apparatus 101. The transfer robot 191 transfers the received mounting substrate BW to the mounting substrate cleaning apparatus 120. The mounting substrate cleaning apparatus 120 rotates the mounting substrate BW while supplying cleaning fluid L to the mounting substrate BW. This cleans the mounting substrate BW (mounting substrate cleaning step: step S104). After cleaning with cleaning fluid L, the substrate is dried by high-speed rotation to dissipate the cleaning fluid L. The mounting substrate cleaning step includes a state where it is performed simultaneously with the component supply body cleaning step. That is, the time for cleaning the component supply body TW overlaps with the time for cleaning the mounting substrate BW.

[0147] After the cleaning process of the component supply body TW is completed, the transfer robot 191 receives the component supply body TW from the supply body cleaning device 110 and passes it to the measuring device 140. The measuring device 140 aligns the component supply body TW (positioning process: step S105). After alignment, the transfer robot 191 receives the component supply body TW from the measuring device 140 and passes it to the adjustment processing device 130. The adjustment processing device 130 performs an adjustment process by irradiating the component supply body TW with UV light to reduce the adhesion of the sheet T (adjustment process: step S106). This positioning process and adjustment process overlap with the mounting substrate cleaning process.

[0148] After the cleaning process of the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning device 120 and passes it to the alignment device 150. The alignment device 150 aligns the mounting substrate BW (positioning process: step S107).

[0149] After the adjustment process is completed, the transfer robot 191 receives the part supply body TW from the adjustment processing device 130 and passes it to the supply body buffer device 160. After the mounting substrate BW is aligned, the transfer robot 191 receives the mounting substrate BW from the alignment device 150 and passes it to the mounting substrate buffer device 170.

[0150] Thus, the component supply body TW and the mounting substrate BW are stored in the component buffer 160 and the mounting substrate buffer 170 (storage process: step S108). After storing the component supply body TW and the mounting substrate BW, if the bonding device 180 is acceptable, the transfer robot 191 receives the component supply body TW and the mounting substrate BW and passes them to the bonding device 180. That is, based on the acceptable signal generated by the processing completion from the bonding device 180, the transfer robot 191 removes the component supply body TW and the mounting substrate BW from the component buffer 160 and the mounting substrate buffer 170. Then, the transfer robot 191 moves the component supply body TW and the mounting substrate BW into the bonding device 180. In the bonding device 180, the electronic component E is picked up from the component supply body TW and mounted on the mounting substrate BW (mounting process: step S109).

[0151] [Effect]

[0152] (1) This embodiment is a plasma processing apparatus 102. Before mounting the electronic component E on the mounting substrate BW, the surface of the bonding surface between the electronic component E and the mounting substrate BW is treated by plasma. The plasma processing apparatus 102 includes: a stage 20 for supporting the component supply body TW, in which a sheet T with an adhesive portion on its surface is supported by a ring R and the electronic component E is adhered to the sheet T; a chamber 10 on which the stage 20 is provided to depressurize the interior; an exhaust port 60 for exhausting the contents of the chamber 10; a gas inlet 30 for introducing the reaction gas into the depressurized chamber 10; a plasma generator 40 for plasmaizing the reaction gas; and a control device for determining that the volatile components in the chamber 10 have completed volatilization from the component supply body TW during depressurization, and based on the determination, introducing the reaction gas from the gas inlet 30 and plasmaizing the reaction gas by the plasma generator 40.

[0153] This embodiment is a pre-installation treatment method. Before installing the electronic component E onto the mounting substrate BW, pre-installation treatment is performed on the mating surface between the electronic component E and the mounting substrate BW. The pre-installation treatment method includes the following processes: a loading process, in which a component supply body TW is loaded into a chamber 10, wherein a sheet T with an adhesive portion on its surface is supported by a ring R and the electronic component E is adhered to the sheet T; a determination process, in which it is determined that the volatile components in the chamber 10 containing the component supply body TW have completely evaporated from the component supply body TW under reduced pressure; a reaction gas introduction process, in which a reaction gas is introduced from a gas inlet 30 based on the determination process; and a surface treatment process, in which the reaction gas is plasmaized by a plasma generator 40 and the surface of the component supply body TW is treated using plasma.

[0154] The pre-installation treatment apparatus 300 of this embodiment includes: a plasma treatment apparatus 101; a loading port 11c for loading / unloading a component supply TW and a mounting substrate BW; a supply cleaning apparatus 110 for cleaning the component supply TW; a mounting substrate cleaning apparatus 120 for cleaning the mounting substrate BW; and a conveying apparatus 190 for conveying the component supply TW.

[0155] The mounting system 100 of this embodiment includes: a pre-mounting processing device 300; and a bonding device for detaching the electronic component E processed by the pre-mounting processing device 300 from the component supply body TW and mounting it on the mounting substrate BW.

[0156] Therefore, volatile components can be removed from the component supply body TW before surface treatment using plasma. In particular, volatile components can be removed from the sheet T with adhesive portions. Thus, the amount of volatile components volatilized from the component supply body TW during plasma surface treatment can be reduced. Therefore, the bonding of volatile components volatilized from the component supply body TW to the surface of the electronic component E of the component supply body TW in the form of compounds or carbon-containing functional groups can be suppressed. That is, the activity and cleanliness of the surface of the electronic component E are not contaminated by volatile components volatilized from the sheet T or adhesive portions. Therefore, the reduction in bonding strength at the interface between the component supply body TW and the mounting substrate BW can be suppressed.

[0157] Furthermore, volatile components volatilized from the part supply TW can be removed in one chamber 10 of the plasma processing apparatus 101. This configuration allows for continued surface treatment using plasma after the removal of volatile components, thus shortening the processing time and preventing the need for large-scale apparatus. In particular, in this embodiment, heating in a reduced-pressure environment allows for more rapid volatilization of volatile components from the part supply TW. Therefore, pretreatment time can be shortened, enabling high-speed installation.

[0158] (2) A heating unit 70 for heating the part supply body TW is provided on the stage 20. The control device 200 starts heating using the heating unit 70 at the same time as the depressurization of the chamber 10 begins, and stops heating using the heating unit 70 based on the determination that the volatile components have completed volatilization. Thus, in the plasma processing apparatus 101, when heating is performed simultaneously with depressurization, the volatilization of volatile components is promoted, therefore, according to Figure 5 (C) Clearly, the endpoint can be reached ahead of schedule. That is, the removal process can be carried out reliably and quickly.

[0159] (3) The plasma processing apparatus 101 has a pressure detector 80 that detects the pressure inside the chamber 10. When the pressure detected by the pressure detector 80 becomes a preset pressure, the control device 200 determines that the evaporation of the volatile component from the component supply TW is complete. The pressure inside the exhaust chamber 10 is affected by the evaporation of the component supply TW inside the chamber 10. If the volatile component evaporates from the component supply TW into the chamber 10, the rate of pressure decrease inside the chamber 10 slows down. If evaporation continues and the amount of evaporation decreases, the rate of pressure decrease accelerates. Thus, based on the state of evaporation from the component supply TW, the change in the state of pressure decrease caused by the exhaust in the chamber 10 (the rate of pressure decrease changes) generates the time point (end point) of the pressure change slope switching.

[0160] In this case, a reduction in evaporation means that the volatile components have been removed from the part supply unit TW. Therefore, the endpoint can be considered as the pressure that ensures sufficient evaporation time for the volatile components to evaporate. That is, by observing the pressure change within the chamber 10 using the pressure detector 80, it is possible to detect (determine) that the volatile components have been removed and that sufficient evaporation time has been ensured. Therefore, the part supply unit TW can be set to a state where the volatile components have been removed to at least a degree that does not cause adverse effects during the installation process.

[0161] according to Figure 5 (D) indicates that the surface treatment using plasma is performed after the endpoints (Ep1, Ep2) where volatile components are removed from the part supply TW. Therefore, the volatilization of volatile components during surface treatment can be suppressed, ensuring thorough surface treatment. This reduces defects during the installation process.

[0162] Additionally, heating is performed under reduced pressure, while simultaneously adjusting the endpoint pressure (refer to...). Figure 5(D) Ep1) is set to the set pressure, thereby allowing the setting of the heating stop time. Insufficient removal of volatile components will result in the volatilization of unwanted components during plasma treatment, affecting bond strength. Excessive removal will lead to reduced productivity. By properly controlling the end point (terminal point) of the removal process, necessary volatile components can be reliably removed, and productivity can be improved. Furthermore, even without heating under reduced pressure, the pressure at the endpoint (refer to...) can be controlled... Figure 5 (D) Ep2) is set to the set pressure, which takes longer than heating, but can suppress the effect of volatile components on the bonding strength and achieve high productivity.

[0163] (4) The plasma processing apparatus 101 has a mask 50 disposed in the chamber 10 to expose the wafer W and cover a portion of the ring R and the wafer T. The control device 200 moves the mask 50 away from the wafer T to the maximum extent before determining that the volatile component has been volatilized from the component supply TW, and moves the mask 50 away from the wafer T to the minimum extent when determining that the volatile component has been volatilized from the component supply TW.

[0164] Therefore, during the evaporation of volatile components, the mask 50 is maximally separated from the sheet T, thus not hindering the evaporation of volatile parts. Furthermore, when surface treatment is performed using plasma after the evaporation of volatile components is complete, the separation between the mask 50 and the sheet T is minimized, and a portion of the ring R and the sheet T is covered, thus suppressing the etching of exposed portions of the ring R and the sheet T. In the plasma processing apparatus 101, after removing a certain amount of volatile components from the component supply body TW, the surface of the electronic component E is activated and cleaned. This suppresses the reduction in bonding strength at the interface between the component supply body TW and the mounting substrate BW.

[0165] In addition, it can achieve narrow connection terminal spacing that is impossible to achieve due to contact between the bonding members containing solder, gold, copper, aluminum and other bumps on the connection terminals, thus forming a high-density package.

[0166] [Variation Example]

[0167] The plasma processing apparatus 101, the pre-installation processing apparatus 300 (which is the pre-installation processing unit X), and the installation system 100 of this embodiment, as described above, can also be configured in the following variations.

[0168] (1) such as Figure 7As shown, the plasma processing apparatus 101 of this embodiment may be equipped with a component detector 90 that detects the amount of a specific component in the gas within the detection chamber 10. In this case, the component detector 90 detects the amount of volatile component volatilized from the part supply TW as the amount of the specific component. When the amount of the specific component detected by the component detector 90 or the change in the amount of the specific component becomes or falls below a preset value, the control device 200 determines that the volatilization of the volatile component from the part supply TW is complete and begins surface treatment. In the case where heating is performed using the heating unit 70, when the amount of the specific component or the change in the amount of the specific component becomes or falls below a preset value (end point), it is determined that the volatilization time can be ensured, and the heating unit 70 stops heating. In the aforementioned case, the control device 200 also moves the mask 50 away from the sheet T to the maximum extent before determining that the volatile component can be ensured from the part supply TW, and moves the mask 50 away from the sheet T to the minimum extent when determining that the volatile component can be ensured from the part supply TW.

[0169] More specifically, the component detector 90 uses a quadrupole mass spectrometer (Q-mass) that detects components via a detection port 11k formed in the chamber 10. The component detector 90 ionizes the gas present in the chamber 10, and separates and measures the generated ions according to their mass. That is, the component detector 90 analyzes the mass of ions generated from the gas present in the chamber 10 and detects the amount present according to their mass.

[0170] At this time, a specific component, such as a component unique to the component supply body TW, can be selected. If a component from the sheet T or adhesive portion of the component supply body TW, which is different from the volatile components present in the chamber 10 (such as moisture adsorbed by the chamber wall), is selected, the volatilization of volatile components during surface treatment can be suppressed.

[0171] The components volatilized from the plasma processing device 101 appear as noise in the pressure change. In this embodiment, the amount of ions from the volatile components volatilized from the component supply TW is detected. Therefore, the amount of volatile components volatilized from the component supply TW can be measured more accurately.

[0172] Therefore, the mass of ions of the volatile component evaporating from the component supplier TW is predetermined, and the amount of ions with the same mass as the volatile component evaporating from the component supplier TW is monitored. Thus, the amount of ions of the volatile component evaporating from the component supplier TW is detected. That is, the component amount is detected by monitoring ions with the same mass as the ions of the volatile component evaporating from the component supplier TW. If the detected amount of ions of the volatile component evaporating from the component supplier TW, or the change in the detected amount, reaches or falls below a set amount, the control device 200 stops the heating performed by the heating unit 70.

[0173] Furthermore, the ions generated in the component detector 90 need to be protected from forces caused by collisions with other molecules during the period from ionization to detection. Therefore, in order to suppress collisions between the generated ions and other molecules, the component detector 90 is preferably installed at the detection port 11k of the chamber 10 via a differential exhaust system.

[0174] (2) The heating unit 70 can also stop heating after a predetermined time has elapsed since heating has started in a depressurized environment and the volatile components have evaporated. More specifically, the time from the start of heating to the point where the pressure detected by the pressure detector 80 or the amount of a specific component detected by the component detector 90 decreases to a level that does not affect the bonding strength is determined in advance through experiments, etc. This time is set as a set time (predetermined time) in the control device 200, and when the set time has elapsed since the start of heating, the control device 200 stops the heating performed by the heating unit 70. As a result, the judgment process becomes simple, and the processing time can be kept constant. In addition, the start of heating can be set when depressurization begins.

[0175] (3) In embodiments where the heating is not performed, the plasma processing apparatus 101 may also be without the heating unit 70. That is, the chamber 10 may be vented and the pressure reduced by the pressure reducing device 61 to remove the volatile components that evaporate from the component supply TW. This simplifies the structure of the plasma processing apparatus 101.

[0176] Alternatively, in the aforementioned case, the component detector 90 can be used instead of the pressure detector 80 to control the pressure reduction device 61. That is, the control device 200 can also control each part of the plasma processing device 101 and start surface treatment using plasma when the amount of a specific component detected by the component detector 90 reaches a preset set amount.

[0177] Alternatively, the volatilization time, which is the time during which the volatile components volatilize to a level that does not affect the bonding strength, can be set in the control device 200. After the set time elapses from the start of depressurization, the control device 200 controls each part of the plasma processing apparatus 101 and begins surface treatment. That is, the control device 200 can also start the surface treatment of the plasma processing apparatus 101 after the time elapsed from the start of venting using the depressurization device 61 until the volatilization of the volatile components is completed, which is determined in advance through experiments, etc.

[0178] (4) such as Figure 8 As shown, in addition to the heating unit 70, the chamber 10 may also have an air supply port 11o, to which a blower 62, a collector 63, and a supply device 64 are connected. The air supply port 11o is an opening for supplying gas into the chamber 10. The supply device 64 is connected to the air supply port 11o as a source for supplying gas into the chamber 10. The gas supplied into the chamber 10 may be, for example, ambient air, clean dry air (CDA), or N2 gas. In this embodiment, N2 gas is used.

[0179] The blower 62 circulates the gas supplied from the supply device 64 into the chamber 10. The blower 62 is a device that draws in gas from one surface and exits gas from the other surface. The blower 62 can be used simply to move the gas. For example, a fan or pump can be used.

[0180] The trap 63 captures volatile components evaporating from the component supply TW. The trap 63 is a hollow, tubular shape, allowing it to trap volatile components evaporating from the component supply TW within its interior. For example, the interior of the trap 63 can be cooled. If volatile components evaporating from the component supply TW collide with the interior of the trap 63, heat is dissipated, causing the volatile components to sublimate (precipitate) from the gas into a solid. As a result, the volatile components adhere to the interior of the trap 63.

[0181] In this embodiment, the pressure reducing device 61, the blower 62, the supply device 64, the filter 63, the exhaust port 60, and the air supply port 11o are connected via piping 651-653 and valve 66. For example, as... Figure 8 As shown, one of the three ends of the first T-shaped pipe 651 is connected to the exhaust port 60 via valve 66a. Valves 66b and 66c are connected to the remaining two ends of the pipe 651. Furthermore, a pressure reducing device 61 is connected to the end of the pipe 651 connected to valve 66b, and a trap 63 is connected to the end of the pipe 651 connected to valve 66c.

[0182] One end of the second T-shaped pipe 652 is connected to the air supply port 11o via valve 66d. Valves 66e and 66f are connected to the remaining two ends of the pipe 652. Furthermore, a supply device 64 is connected to the end of the pipe 652 connected to valve 66e, and another surface of the blower 62 is connected to the end of the pipe 652 connected to valve 66f.

[0183] The other end of the trap 63 is connected to one surface of the blower 62 via a pipe 653. This configuration allows for the supply and circulation of N2 gas into the chamber 10.

[0184] Furthermore, the blower 62 can also be connected to the gas inlet 30 instead of the gas supply port 11o. That is, the end of the piping 652 can also be connected to the gas inlet 30 via the valve 66d. In this case, the gas supply port 11o is not required.

[0185] Next, the operation of the plasma processing apparatus 101 in this embodiment will be described. First, the part supply body TW is pre-loaded into the chamber 10 and supported by the stage 20, with all valves 66 closed. The control device 200 opens valves 66a and 66b, and begins to exhaust the gas in the chamber 10 using the pressure reducing device 61. After exhausting the gas in the chamber 10, valves 66a and 66b are closed. Furthermore, at this time, the mask 50 is positioned at its maximum elevation, away from the sheet T.

[0186] Next, valves 66d and 66e are opened, and N2 gas is supplied to chamber 10 through supply device 64. After supplying N2 gas until the pressure inside chamber 10 reaches the same as atmospheric pressure, valves 66d and 66e are closed, and heating by heating unit 70 begins. After the heating temperature reaches the preset temperature, control device 200 opens valves 66a, 66c, 66d, and 66f, causing blower 62 to operate.

[0187] If the heating temperature reaches a preset temperature (e.g., 40°C to 200°C), the volatile components begin to evaporate from the component supply body TW. That is, the volatile components that evaporate from the component supply body TW within the chamber 10 are emitted as gas.

[0188] When the evaporation begins, the control device 200 opens valves 66a, 66c, 66d, and 66f, causing the blower 62 to operate, thereby initiating the circulation of gas within chamber 10. Volatile components evaporating from the part supply unit TW are captured by the collector 63. The gas within chamber 10 is discharged from chamber 10 and, after the volatile components are removed, is returned to chamber 10. This circulation of gas within chamber 10 captures and gradually removes volatile components from the gas within chamber 10. Furthermore, in this case, the blower 62 and the collector 63 function as an exhaust device for removing volatile components evaporating from the part supply unit TW.

[0189] The removal of this volatile component is carried out for a predetermined time. This predetermined time can be set as the time required for the volatile component to be removed without affecting the bond strength, as determined in advance through experiments. This determined time is set as the predetermined time in the control device 200. After the predetermined time, the control device 200 stops the circulation, allowing the gas inside the chamber 10 to be discharged outside. That is, after the predetermined time has elapsed, the control device 200 stops the blower 62 and closes valves 66c, 66d, and 66f. Then, valves 66a and 66b are opened, and the gas inside the chamber 10 is discharged through the pressure reducing device 61.

[0190] As described above, in this embodiment, the gas inside chamber 10 is heated and circulated to remove volatile components from the part supply unit TW. After the predetermined time has elapsed, gas circulation and heating are stopped. Then, surface treatment using plasma is initiated. That is, the pressure inside chamber 10 is reduced, a reactive gas is introduced to create pressure for surface treatment, plasma is generated, and surface treatment is performed for a predetermined time (t0). After the surface treatment is completed, the environment inside chamber 10 is restored to atmospheric conditions, and the part supply unit TW is removed from chamber 10.

[0191] According to this embodiment, even without depressurization, heating the component supply body TW can promote the evaporation of volatile components from the component supply body TW and efficiently remove the volatile components. Furthermore, since the gas used to remove volatile components is recycled, the amount of CDA or N2 gas used can be suppressed, for example.

[0192] The endpoint (predetermined time) for removing volatile components is preferably set such that the volatile components are reliably removed to the extent that they do not affect the bonding, and this is done within the shortest possible time. This endpoint in this embodiment is referred to as the second evaporation time. The second evaporation time is determined, for example, as follows.

[0193] The second evaporation time is set based on the exhaust time t1 from the start of depressurization to reaching pressure Ep1 in the embodiment where volatile components are removed by simultaneous heating and depressurization. Pressure Ep1 is... Figure 5 The pressure at the position indicated by the white circle in the solid line of (C) is the pressure at the endpoint when heat is applied to the part supply body TW in a depressurized environment. In this embodiment, the pressure Ep1 and the exhaust time t1 from the start of depressurization to reaching pressure Ep1 are also predetermined. The determined pressure Ep1 and exhaust time t1 are stored in the control device 200.

[0194] Additionally, the control device 200 stores any heating time during which the gas supplied to chamber 10 is circulated while being heated. For example, the heating time is set to the exhaust time t1 plus 30 seconds. Then, the control device 200 performs heating during the arbitrary heating time. After heating, the gas in chamber 10 is exhausted. The pressure limit at the exhaust time t1 from the start of exhaust is detected by the pressure detector 80, and the control device 200 stores the pressure limit.

[0195] Next, the control device 200 compares the ultimate pressure with pressure Ep1. When the ultimate pressure is below pressure Ep1, the amount of volatile components evaporating from the component supply TW is reduced to an amount that does not cause adverse effects during installation. Therefore, the control device 200 stores any heating time as a second evaporation time.

[0196] If the ultimate pressure is higher than pressure Ep1, the control device 200 resets the arbitrary heating time to a longer duration. For example, it adds 30 seconds to the current arbitrary heating time and stores it as a new arbitrary heating time. Then, during the re-stored heating time, for another component supply TW, heating is performed while the gas supplied to chamber 10 is circulated, and the ultimate pressure at exhaust time t1 is compared with pressure Ep1 again. The control device 200 repeats this operation until the ultimate pressure falls below pressure Ep1.

[0197] Furthermore, in the initial measurement where the ultimate pressure is below pressure Ep1, the possibility of excessive heating time is also considered. Therefore, for example, if the ultimate pressure is more than 10% lower than pressure Ep1, it is preferable to optimize the heating time, just as it is preferable if the ultimate pressure is higher than pressure Ep1. Specifically, a heating time that is shortened by 30 seconds from an arbitrary heating time is stored again as an arbitrary heating time, and heating treatment is performed in another part supply body TW. The ultimate pressure at exhaust time t1 is measured, and the ultimate pressure is compared with pressure Ep1. The control device 200 repeats this operation until the ultimate pressure is within 10% lower than pressure Ep1. Assuming that the ultimate pressure becomes higher than pressure Ep1, the optimal heating time is determined by adding up to 30 seconds, for example, 15 seconds, to the heating time.

[0198] In the example described, the prescribed width for appropriate pressure is set to 10%, but this value can be set by determining the optimal value through experiments, etc.

[0199] Furthermore, while the description compares the ultimate pressure with pressure Ep1, it is also possible to measure the time from the start of exhaust to reaching pressure Ep1 and compare it with the exhaust time t1. In this case, similarly, any determined heating time (second evaporation time) can be optimized.

[0200] Thus, the second evaporation time (end point) is determined, and based on the second evaporation time, the gas is circulated to remove the volatile components. This allows for efficient removal without having to measure the pressure every time the pressure is reduced to near Ep1.

[0201] Alternatively, a component detector 90, as described above, can be set to determine when the amount of a specific component in the circulating gas reaches a preset amount (end point), thus ensuring sufficient evaporation time, and causing the heating unit 70 to stop heating.

[0202] (5) In the described configuration, the mask 50 of the plasma processing apparatus 101 is a structure in which it is supported from below and raised and lowered, but it may also be a structure in which it is supported from above and raised and lowered. Alternatively, the plasma processing apparatus 101 may not have a mask 50.

[0203] (6) An irradiation device 72 for irradiating the component supply TW with UV light may also be provided in the plasma processing apparatus 101. The component supply TW is irradiated with UV light during and / or after the volatile component removal process. This can decompose and remove volatile components adhering to the surface of the wafer W. In addition, when UV light irradiation is performed during the volatile component removal process, the volatile components can be easily decomposed and discharged, thereby suppressing re-adhesion to the wafer W.

[0204] For example, Figure 9 As shown, multiple irradiation devices 72 may also be provided above the chamber 10. In this case, the irradiation devices 72 may be provided near the sidewall of the chamber 10 and positioned away from the plasma P. Furthermore, when irradiating the wafer W with UV light during and / or after the volatile component removal process, the mask 5 is positioned to be as far away from the rising position of the wafer T as possible. As a result, UV light can easily reach the wafer T through the gap of the rising mask 50.

[0205] (7) The heaters of the heating section 70 can be configured as multiple cylindrical or circular plates. Alternatively, multiple annular heaters of different diameters can be arranged on concentric circles. The annular heaters can also be positioned corresponding to the exposed portion of the sheet T. In this way, by arranging the heaters only on the exposed portion of the sheet T where the volatile components have a large evaporation area, the structure can be simplified and the power consumption reduced.

[0206] (8) Alternatively, a heating lamp may be provided instead of the heating unit 70. For example, multiple heating lamps may be provided above the chamber 10, such as the irradiation device 72. Of course, both the heating unit 70 for heating the part supply body TW and the irradiation device 72 for irradiating the part supply body TW with UV light may be provided in the plasma processing apparatus 101, or both the heating unit 70 and the irradiation device 72 may be provided as the part being heated.

[0207] (9) The heating temperature of the component supply body TW can also be determined by temperature detector 74. Temperature detector 74 is, for example, a thermocouple. Figure 9 As shown, the temperature detector 74 is inserted into the interior of the chamber 10 from the side. The front end of the temperature detector 74 is positioned between the stage 20 and the mask 50. For example, the front end of the temperature detector 74 is positioned near the ring R of the part supply body TW in a manner that does not interfere with the support shaft 50a, the stop 11f, the rod 21a, the rod 21b, and the robot arm 191a.

[0208] (10) In the embodiment described above, the pressure at the time point when the slope of the pressure change is switched is set as the set pressure (endpoint). However, the endpoint can also be set based on the pressure change per unit time (ΔP / Δt). For example, the control device 200 stores the pressure change when there is no part supply body TW. Then, the control device 200 associates the pressure in the chamber 10 with the pressure change per unit time (ΔP / Δt) at the stored pressure based on the stored data. Then, in step S100, the control device 200 monitors the pressure in the chamber 10 and the pressure change per unit time (ΔP / Δt) at the stored pressure. The control device 200 compares the stored pressure change per unit time (ΔP / Δt) with the monitored pressure change per unit time (ΔP / Δt), and determines that the endpoint has been reached when the difference in pressure change is below a threshold.

[0209] (11) The control device 200 may also determine that the evaporation of volatile components from the component supply TW is complete if the rate of pressure reduction detected by the pressure detector 80 from the start of exhaust is lower than the state after the start of exhaust, and then rises. For example, Figure 5As shown in (C), after the initial decompression, the rate of pressure reduction increases, and then decreases. The point at which the rate of pressure reduction increases after that is taken as the endpoint. Alternatively, the point at which the rate of change increases after observing micro-vibrations in pressure variation can also be taken as the endpoint.

[0210] (12) In the configuration where gas is circulated using both the heating unit 70 and the blower 62, after the heating unit 70 stops heating due to the completion of volatile component evaporation, gas can be supplied by the supply device 31 or the supply device 64 for a certain period of time, while the blower 62 circulates the gas and / or the pressure reducing device 61 exhausts the gas, thereby ventilating and cooling the chamber 10 and promoting the discharge of volatile components. Alternatively, during heating using the heating unit 70, pressure can be reduced without gas circulation. After the heating unit 70 stops heating due to the completion of volatile component evaporation, a reactive gas or an inert gas is introduced to form surface pressure, and the blower 62 circulates and / or exhausts the gas for a certain period of time, thereby cooling the chamber. In the case of introducing a reactive gas, after cooling by circulation and / or exhaust for a certain period of time, the chamber can be directly transferred to surface treatment using plasma, thus increasing throughput. When an inert gas is introduced, after cooling by circulation and / or exhaust for a certain period of time, a reactive gas is introduced and the mixture is transferred to the surface treatment.

[0211] (13) In the plasma treatment apparatus 101, pressure reduction may not be performed when removing volatile components by evaporation. That is, before starting surface treatment using plasma, gas is introduced and heated by the heating unit 70, thereby causing volatile components to evaporate from the part supply TW. At this time, either the pressure reducing device 61 is used for exhaust, or the blower 62 is used to circulate the gas, while the collector 63 captures and removes the volatile components. The heating using the heating unit 70 and the circulation using the blower 62 are stopped when the amount of a specific component detected by the component detector 90 reaches a preset set amount. Then, pressure reduction is started, and surface treatment using plasma is started at the time point when the pressure reaches the base pressure.

[0212] In this configuration, after heating using the heating unit 70 is stopped, gas can be supplied for a certain period of time using the supply device 31 or the supply device 64, while the gas is circulated using the blower 62 and / or exhausted using the pressure reducing device 61. This ventilates and cools the chamber 10, thereby promoting the removal of volatile components. In this case, a certain period of time is defined as the end point from the time when the amount of a specific component detected by the component detector 90 reaches a preset amount. As a result, volatile components in the chamber 10 can be further removed during surface treatment, thus enabling thorough surface treatment. In this case, the temperature of the part supply body TW decreases during surface treatment, so even if volatile components remain, evaporation due to heating during surface treatment can be suppressed.

[0213] (14) In the case of heating using the heating unit 4, the heating can be delayed by a preset time after the endpoint is reached, ensuring sufficient evaporation time. This further reduces the amount of volatile components in the chamber 10, more reliably suppresses the re-adhesion of volatile components, and makes it less likely that the surface treatment will be insufficient. In addition, a certain allowable range can be added to the endpoint instead of delaying the heating from the endpoint. For example, the endpoint can be set by adding a certain margin to the pressure or component quantity detection value, thereby more reliably completing the evaporation.

[0214] (15) In the described embodiment, the mounting system 100 consists of one connecting device 180, but is not limited thereto. For example... Figure 10 As shown, the mounting section Y can also be a mounting system 100 with multiple joining devices 180. The number of joining devices 180 in the mounting section Y can be determined by the cycle time, which is determined by the size of the part supply body TW, the mounting base plate BW, and the required processing time. By increasing the number of devices, efficiency can be improved.

[0215] Thus, when multiple coupling devices 180 are installed in the mounting section Y, such as Figure 10 As shown, a base 11m can be provided in the mounting section Y, and multiple engaging devices 180 can be arranged to connect with the periphery of the base 11m. Figure 10 Two joining devices 180 are shown, but the number of joining devices 180 connected is not limited; it can be one or more. Additionally, a conveying device 190α, different from the conveying device 190, can be installed inside the base 11m for distributing, supplying, and retrieving part supply bodies TW and mounting substrates BW to each joining device 180. Multiple conveying devices 190α can also be installed as needed.

[0216] Alternatively, a buffer device 11n that can accommodate the component supply body TW and the mounting substrate BW can be provided inside the substrate 11m.

[0217] Alternatively, the pre-processed component supply TW and mounting substrate BW can be stored in the buffer device 11n instead of in the component buffer device 160 and mounting substrate buffer device 170 of the pre-mounting processing unit X. Furthermore, the mounting-processed component supply TW and mounting substrate BW can also be stored in the buffer device 11n.

[0218] In addition, such as Figure 10 As shown, a dedicated conveying device 190β can also be provided at the loading port 11c. Alternatively, a supply body buffer device 160 and a mounting substrate buffer device 170 can be provided on the loading port 11c side of the base 11a, housing the part supply body TW and mounting substrate BW conveyed by the conveying device 190β in the supply body buffer device 160 and mounting substrate buffer device 170. The part supply body TW and mounting substrate BW housed in the supply body buffer device 160 and mounting substrate buffer device 170 can be conveyed by the conveying device 190 to each chamber 11b.

[0219] The buffer device 11n can also be a storage container capable of holding multiple component suppliers TW and mounting substrates BW. The storage container can be stacked at intervals and hold the component suppliers TW and mounting substrates BW.

[0220] The buffer device 11n can hold the pre-processed part supply body TW and the mounting substrate BW for subsequent installation, or it can hold the part supply body TW and the mounting substrate BW after the installation process is completed.

[0221] Alternatively, multiple buffer devices 11n can be installed within the base 11m.

[0222] Furthermore, the buffer device 11n can also be configured as a stage capable of holding only one component supply TW or mounting substrate BW. In this case, the component supply TW or mounting substrate BW to be mounted is housed in the supply buffer device 160 or mounting substrate buffer device 170 as described in the embodiment. Alternatively, the buffer device 11n can also be configured as a storage container capable of holding multiple component supply TWs or mounting substrates BW. In this case, similar to the supply buffer device 160 or mounting substrate buffer device 170, the component supply TWs or mounting substrates BW can be stacked and housed.

[0223] Alternatively, a single conveying device 190 can distribute the part supply body TW and the mounting base plate BW to each of the multiple joining devices 180. In this case, it is sufficient to install the conveying device 190 inside the base into which the base 11a and the base 11m are joined.

[0224] (16) As described above, the base 11m is provided in the mounting section Y, and the mounting section Y and the pre-installation treatment section X can also be separate components. That is, the mounting system 100 can be configured to independently construct the mounting section Y and the pre-installation treatment section X. The pre-installation treatment section X can be configured to include a removal device. In this case, the control device 200 can control both the pre-installation treatment section X and the mounting section Y, which are separately provided therewith, or it can be provided to provide independent control devices that control them separately.

[0225] In the various variations described above, it is also possible to achieve narrow connection terminal spacing that is impossible to achieve due to contact between mounting components containing solder, gold, copper, aluminum, etc. on the connection terminals, thereby forming a high-density package.

[0226] [Other Implementation Methods]

[0227] The embodiments and variations of the present invention have been described above. However, these embodiments and variations are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, changes, and combinations can be made without departing from the spirit of the invention. These embodiments and variations are included in the scope or spirit of the invention and are included in the invention as described in the claims.

[0228] Explanation of icon numbers

[0229] 11a, 11m: Matrix

[0230] 11b: Chamber

[0231] 11c: Loading port

[0232] 11d: Window component

[0233] 11e: Hole

[0234] 11f: Stop

[0235] 11j, 11k: Detection port

[0236] 11o: Gas supply port

[0237] 11n: Buffer device

[0238] 10: Chamber

[0239] 20: Platform

[0240] 21: Drive Unit

[0241] 21a, 21b: Rods

[0242] 21c: Drive mechanism

[0243] 30: Gas inlet

[0244] 31: Supply device

[0245] 31a: Piping

[0246] 40: Plasma generator

[0247] 41: Antenna

[0248] 42: Power supply

[0249] 43: Matching Box

[0250] 50: Mask

[0251] 50a: Support shaft

[0252] 51: Drive Unit

[0253] 51a: Rod

[0254] 51b: Drive mechanism

[0255] 60: Exhaust port

[0256] 61: Pressure reducing device

[0257] 61a: Piping

[0258] 62: Blower

[0259] 63: Trapper

[0260] 64: Supply device

[0261] 651, 652, 653: Piping

[0262] 66, 66a~66f: Valves

[0263] 70: Heating section

[0264] 71: Cooling device

[0265] 72: Irradiation device

[0266] 74: Temperature detector

[0267] 80: Pressure detector

[0268] 90: Composition Detector

[0269] 92: Window

[0270] 100: Install the system

[0271] 101: Plasma Processing Unit

[0272] 110: Supply body cleaning device

[0273] 111: Cleaning Room

[0274] 111a: Opening

[0275] 111b: Door blocking

[0276] 112: Support section

[0277] 113: Rotating mechanism

[0278] 114: Cup

[0279] 115: Supply Department

[0280] 115a: Nozzle

[0281] 115b: Mobile mechanism

[0282] 120: Install substrate cleaning equipment

[0283] 130: Adjust the processing device

[0284] 131: Irradiation device

[0285] 140: Measurement device

[0286] 150: Alignment device

[0287] 160: Supply buffer device

[0288] 161: Storage

[0289] 170: Install substrate buffer device

[0290] 171: Storage

[0291] 180: Engaging device

[0292] 190, 190α, 190β: conveying device

[0293] 191: Transport Robot

[0294] 191a: Robotic Arm

[0295] 192: Mobile mechanism

[0296] 200: Control device

[0297] 300: Pre-treatment device installation

[0298] TW: Parts Supply Unit

[0299] BW: Mounting substrate

[0300] X: Pre-installation processing unit

[0301] Y: Installation Department

Claims

1. A plasma processing apparatus, wherein, before mounting electronic components onto a mounting substrate, a surface treatment is performed on the mating surface between the electronic components and the mounting substrate using plasma, the plasma processing apparatus being characterized by having: A stage supports a component supply body in which a sheet with an adhesive portion on its surface is supported by a ring and the electronic component is adhered to the sheet. The chamber is equipped with the aforementioned stage and is capable of decompression of the interior. An exhaust port is used to vent air from the chamber. A gas inlet is used to introduce the reactant gas into the depressurized chamber; A plasma generator that plasmaizes the reactive gases; as well as The control device determines that the volatile components have completed volatilization from the component supply body during the depressurization in the chamber, and based on the determination, introduces the reaction gas from the gas inlet, so that the plasma generator plasmaizes the reaction gas.

2. The plasma processing apparatus according to claim 1, characterized in that, It has a pressure detector for detecting the pressure inside the chamber. When the pressure detected by the pressure detector becomes a preset pressure or pressure change, the control device determines that the evaporation of the volatile components from the component supply body is complete.

3. The plasma processing apparatus according to claim 1, characterized in that, It has a pressure detector for detecting the pressure inside the chamber. If the pressure decrease rate detected by the pressure detector from the start of exhaust is lower than the state after exhaust begins and then increases, the control device determines that the volatile components have completed evaporation from the component supply.

4. The plasma processing apparatus according to claim 1, characterized in that, A component detector has a component detector that can detect the amount of a specific component in the gas within the chamber. When the amount of a specific component detected by the component detector or the change in the amount of the specific component is at or below a preset value, the control device determines that the evaporation of the volatile component from the component supply body is complete.

5. The plasma processing apparatus according to claim 1, characterized in that, The platform is equipped with a heating unit for heating the part supply body. The control device starts heating using the heating unit at the same time as the decompression of the chamber begins, and stops heating using the heating unit based on the determination.

6. The plasma processing apparatus according to claim 1, characterized in that, The chamber It has a gas supply port for supplying gas into the chamber. A blower for circulating the gas supplied to the chamber and a trap for capturing volatile components that evaporate from the component supply are connected to the gas supply port and the exhaust port.

7. The plasma processing apparatus according to claim 1, characterized in that, A blower for circulating the gas supplied to the chamber and a trap for capturing volatile components evaporating from the component supply are connected to the gas inlet and the exhaust outlet.

8. The plasma processing apparatus according to claim 1, characterized in that... With a mask, The mask is disposed within the cavity, exposing the electronic components and covering a portion of the ring and the sheet. Before determining that the volatile component has completely evaporated from the part supply, the control device moves the mask away from the sheet to the maximum extent, and when determining that the volatile component has completely evaporated from the part supply, moves the mask away from the sheet to the minimum extent.

9. A pre-treatment device for installation, characterized in that... have: The plasma processing apparatus as described in any one of claims 1 to 8; Loading port for loading / unloading the parts supply body and the mounting base plate; A supply body cleaning device is used to clean the part supply body. The mounting substrate cleaning device is used to clean the mounting substrate. as well as A conveying device for conveying the parts supply body.

10. An installation system, characterized in that... have: The pre-installation treatment apparatus as described in claim 9; as well as A bonding device that detaches the electronic component, after being processed by the pre-mounting processing device, from the component supply body and mounts it onto the mounting substrate.

11. A pre-installation treatment method, wherein before mounting electronic components onto a mounting substrate, pre-installation treatment is performed on the mating surfaces of the electronic components and the mounting substrate, the pre-installation treatment method being characterized by performing the following treatment: The component supply body is moved into the chamber during the loading process. In the component supply body, a sheet with an adhesive portion on its surface is supported by a ring and the electronic component is adhered to the sheet. The determination process determines that the volatile components have completely evaporated from the part supply body during the decompression process in the chamber where the part supply body was moved in. The reaction gas introduction process involves introducing the reaction gas through a gas inlet based on the aforementioned determination process; and Surface treatment involves plasmaizing the reactive gas using a plasma generator to treat the surface of the part supply body using plasma.

12. The pre-installation treatment method according to claim 11, characterized in that, The determination process is based on the pressure or pressure change within the chamber to determine whether the volatile components have completed volatilization from the component supply.

13. The pre-installation treatment method according to claim 11, characterized in that, The determination process determines that the evaporation of volatile components from the component supply is complete when the rate of pressure reduction in the chamber starting from exhaust is lower than the rate of pressure reduction after exhaust begins and then increases.

14. The pre-installation treatment method according to claim 11, characterized in that, When the amount of a specific component in the gas in the chamber is determined to be a preset amount, it is determined that the evaporation of the volatile component from the component supply body is complete.

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