Silicon carbide ingot laser hidden cutting method and system

Abstract

The application provides a silicon carbide crystal ingot laser hidden cutting method and system. The method comprises the following steps: forming a pre-modification guide layer near a target cutting layer of a silicon carbide crystal ingot by using a first laser, the pre-modification guide layer is a discrete or quasi-discrete local structure change layer, and the area proportion of the continuous carbonization area is lower than a preset threshold; forming a main modification layer in the adjacent area of the pre-modification guide layer by using a second laser; and peeling the silicon carbide crystal ingot along the main modification layer to obtain a silicon carbide slice. The pre-modification guide layer is not used as a continuous strong absorption carbonization layer, but through local amorphization, defect state, micro stress field or refractive index change, the formation threshold fluctuation of the subsequent main modification layer is reduced, and the energy deposition position, modification layer continuity and crack propagation direction are guided. The application can reduce the risk of heat affected zone expansion, axial deep damage and longitudinal crack early expansion caused by the strong carbonization absorption layer, and improve the controllability of the modification layer, the consistency of the slice thickness and the peeling stability in the laser hidden cutting process of the silicon carbide crystal ingot.

Description

Technical Field

[0001] This invention relates to the field of laser slicing technology for silicon carbide ingots, and particularly to a method and system for laser slicing of silicon carbide ingots. Background Technology

[0002] Laser slicing of silicon carbide ingots typically requires the formation of a continuous or quasi-continuous modified layer inside the ingot, followed by peeling along the modified layer using external force. Because silicon carbide exhibits weak linear absorption in the near-infrared band, the internal modification process often relies on multiphoton absorption, avalanche ionization, and local structural transformations, resulting in a narrow process window.

[0003] To improve the stability of laser energy deposition, existing technologies employ a method of first forming an absorption layer or pre-modified layer before performing the main dicing. This approach can mitigate the instability of laser action within transparent materials to some extent. However, if the pre-absorption layer is characterized by strong carbonization or continuous high absorption, it can easily lead to problems such as expansion of the local heat-affected zone, deepening of axial damage, premature crack propagation, and increased roughness at the subsequent separation interface.

[0004] For large-sized silicon carbide ingots, the material state difference between the central and peripheral regions will further amplify the inhomogeneity of the pre-absorption layer. If the pre-absorption layer is over-carbonized in local areas, it will cause the subsequent master slicing energy deposition to deviate from the target depth, or even form multi-layer modification or longitudinal cracks, thereby affecting the uniformity of slice thickness and separation stability.

[0005] Therefore, a pretreatment method that differs from a continuous strong carbonization absorption layer is needed, so that the pretreatment layer can mainly play the roles of guiding energy deposition, guiding crack direction, and adjusting local threshold, without excessively introducing continuous carbonization absorption and axial deep damage. Summary of the Invention

[0006] The purpose of this invention is to provide a laser stealth cutting method for silicon carbide ingots assisted by a pre-modified guiding layer with continuous carbonization limitation, so as to reduce the risk of thermal damage, deep damage and uncontrolled cracking that may be caused by existing strong absorption pretreatment layers.

[0007] Specifically, the present invention provides a method for laser slicing of silicon carbide ingots, comprising the following steps: A pre-modification guiding layer is formed inside a silicon carbide ingot using a first laser. The pre-modification guiding layer is a discrete or quasi-discrete local structure change layer located near the target slice layer, and the area ratio of the continuous carbonization region is lower than a preset threshold. A second laser is used to form a main modified layer in the region adjacent to the pre-modified guiding layer, wherein the single-pulse energy and / or power density of the second laser is higher than that of the first laser; The silicon carbide ingot is peeled off along the main modified layer to obtain silicon carbide slices; wherein, the pre-modified guiding layer guides the energy deposition position, the continuity of the modified layer and the crack propagation direction of the main modified layer through at least one of local amorphization, defect state, micro-stress field or refractive index change.

[0008] The core of the pre-modified guiding layer lies in the pre-control of the low damage threshold. Phase transition behavior is regulated by the laser energy threshold: when the energy is below the main modification threshold, the modified region is dominated by amorphization, defect state changes, and local stress field reconstruction; when the energy exceeds the main modification threshold, amorphous atomic rheology and local lattice rotation jointly drive lattice slip, potentially inducing the formation of 3C-SiC. The pre-modified guiding layer allows for a small amount of carbonization at locations with excessively high local energy, but does not form a continuous, strongly absorbing layer penetrating the target slice surface.

[0009] The second laser, with its higher single-pulse energy and / or power density, acts on the region adjacent to the pre-modified guiding layer. This reduces the fluctuation of the main modification threshold due to localized amorphization, defect states, and micro-stress fields in the pre-modified region, leading to preferential energy deposition near the target slice layer. Consequently, the initiation location and propagation direction of microcracks are guided, improving the continuity of the main modification layer and reducing the risks of multi-layer modification, longitudinal cracks, and roughening of the peeling surface.

[0010] This invention forms a low-damage, non-penetrating, and continuously carbonized restricted pre-modification guiding layer near the target slice layer using a first laser, and then forms a main modification layer using a second laser. This guides the main modification layer in terms of spatial position, continuity, and crack propagation direction, thereby forming a dual-layer synergistic hidden cutting path that is distinct from the continuous strong carbonization absorption layer.

[0011] Preferably, the pre-modified guiding layer includes a dot matrix, a linear matrix, a grid array, discontinuous stripes, or a combination thereof.

[0012] Preferably, the distance between the pre-modified guiding layer and the main modified layer is 1-50 μm, more preferably 5-30 μm, and even more preferably 8-20 μm. If the distance is too small, it may cause interlayer interference between the two layers, and the pre-modified layer may be directly destroyed by the main modified layer; if the distance is too large, the guiding effect of the pre-modified layer will be weakened, and the energy deposition position of the main modified layer will deviate from the target area.

[0013] Preferably, the thickness of the pre-modified guiding layer is less than the thickness of the main modified layer. The function of the pre-modified guiding layer is to guide, rather than bear, crack propagation. A thinner pre-modified layer is sufficient to induce localized amorphization and stress concentration, while the main modified layer needs sufficient thickness to bear the continuous propagation of cracks and eventual mechanical ablation.

[0014] Preferably, the area ratio of the continuous carbonized region in the pre-modified guiding layer is lower than a preset threshold. The preset threshold can be determined by Raman carbon peak, transmittance change, OCT scattering intensity or microscopic image recognition results. The pre-modified guiding layer guides the energy deposition position, the continuity of the modified layer and the crack propagation direction of the main modified layer.

[0015] Preferably, the single-pulse energy of the first laser is lower than that of the second laser.

[0016] Preferably, both the first and second lasers are pulsed lasers with a center wavelength of 1030 nm or 1064 nm, a pulse width of 100 fs-100 ns, preferably 200 fs-20 ps or 1-10 ns, and a repetition frequency of 20-500 kHz, preferably 50-200 kHz; the numerical aperture of the focusing objective is 0.3-0.8, preferably 0.4-0.65. The single-pulse energy of the first laser is 3-15 μJ, preferably 5-10 μJ, and the scanning speed is 400-1000 mm / s, used to form localized amorphization, defect states, or micro-stress field changes without forming a continuous strong carbonization absorption layer; the single-pulse energy of the second laser is 10-60 μJ, preferably 15-45 μJ, and the scanning speed is 40-800 mm / s, used to form a continuous or quasi-continuous main modification layer. The single-pulse energy of the second laser is 1.5-8 times that of the first laser, preferably 2-5 times. In actual equipment, the average output power is set according to the single-pulse energy and repetition frequency using P=E×f to avoid replacing the single-pulse energy threshold with a fixed average power. The processing focal depth is 100-800 μm, preferably 150-500 μm; the pre-modified particle diameter is 5-25 μm; the main modified particle diameter is 15-60 μm; the point spacing is less than or equal to the corresponding modified particle diameter; and the line spacing is 10-100 μm, preferably 20-75 μm. When femtosecond pulses are used and the single-pulse energy is close to the upper limit, the peak power density is controlled by reducing the focusing numerical aperture, increasing the focal spot, and using at least one of beam shaping or depth-of-focus compensation to reduce the risk of filamentation, multi-layer modification, and abnormal longitudinal cracks.

[0017] Preferably, the following steps are also included: Obtain the three-dimensional distribution information of material parameters of silicon carbide ingots; Based on the three-dimensional distribution information of the material parameters, a topology optimization algorithm is used to generate a geometric topology scheme for the pre-modified guiding layer. The geometric topology scheme includes at least the density distribution, arrangement direction and geometric configuration type of the pre-modified guiding layer. According to the geometric topology scheme, the first laser is controlled to form a pre-modified guiding layer inside the silicon carbide ingot.

[0018] Significant material parameter differences exist between the central and edge regions of large-size silicon carbide ingots (especially 8 inches and above), such as transmittance, residual stress, and crystal orientation deviation, which exhibit radially non-uniform distribution. A uniform guide layer topology scheme is difficult to adapt to this non-uniformity. This invention can establish a parameter rule table based on material parameter partitioning. Alternatively, when historical processing data, simulation models, or experimental calibration data are available, a multi-objective genetic algorithm can be used to jointly optimize the guide layer density distribution (Dc, Dm, De), alignment direction (θc, θm, θe), and geometric configuration type, achieving a customized guide layer design for each ingot.

[0019] Preferably, the geometric topology scheme is generated by a regionalized parameter rule table or a multi-objective genetic algorithm. The regionalized parameter rule table sets the corresponding guiding layer density, arrangement direction, and geometric configuration based on the transmittance, residual stress, or crystal orientation deviation of the central region, middle ring region, and edge region. When using a multi-objective genetic algorithm, its decision variables include: guiding layer density distribution variables, including the central region density Dc, the middle ring region density Dm, and the edge region density De; guiding layer arrangement direction variables, including the central region angle θc, the middle ring region angle θm, and the edge region angle θe, where the angle is the angle between the guiding layer arrangement direction and the crystal orientation; and guiding layer geometric configuration type variables, selected from lattice, linear array, mesh, spiral, concentric ring, or fractal topology.

[0020] Preferably, when using a multi-objective genetic algorithm, the objective function of the multi-objective genetic algorithm is to minimize the weighted comprehensive index F:

[0021] Where Ra is the predicted surface roughness, Δσ is the predicted spalling stress fluctuation amplitude, Ecrack is the probability of crack deflection from the target plane, and T is the total processing time. These are preset weighting coefficients.

[0022] Preferably, the constraints of the regionalization parameter rule table or the multi-objective genetic algorithm include: The proportion of discontinuous carbonization area in the pre-modified guiding layer is lower than a preset threshold. The distance between the pre-modified guiding layer and the main modified layer is 1 μm to 50 μm; The density of the guide layer in the edge region is not lower than that in the center region.

[0023] Preferably, the geometric topology scheme includes at least one of the following topological configurations: Gradient density lattice, with the spacing between dots gradually decreasing from the center to the edge; The concentric ring-shaped guide layer is composed of multiple concentric rings with gradually varying inter-ring spacing. The spiral guide layer is an Archimedean spiral with a gradually changing pitch. The serrated linear array is composed of serrated broken lines, with the serration direction matching the crystal orientation. A biorthogonal grid is formed by lines in a first direction orthogonally intersecting with lines in a second direction. Fractal guided networks have self-similar fractal structures.

[0024] Preferably, the process of controlling the first laser to form a pre-modified guiding layer inside the silicon carbide ingot according to the geometric topology scheme further includes: The spatial location, scattering intensity, or morphological changes of the formed modified particles are characterized by at least one of coaxial scattering detection, optical coherence tomography, or microscopic imaging systems. The intensity of plasma luminescence or the intensity of processed luminescence are monitored by a plasma spectrometer or a processing luminescence detection unit. Based on the characterization data or luminescence intensity data, feedback corrections are made to the single-pulse energy, scanning speed, guide layer density, or arrangement direction of subsequent regions.

[0025] During the formation of the pre-modified guiding layer, optical coherence tomography (OCT), coaxial scattering detection, or microscopic imaging are used to characterize the spatial location, scattering intensity, or morphological changes of the modified points; plasma spectroscopy or processing luminescence intensity is used to characterize energy deposition fluctuations. The above online detection results serve as indicators of modification stability and parameter feedback, and can be combined with Raman spectroscopy, microscopic images, or sampled cross-sectional results to confirm the degree of amorphization and the area ratio of continuous carbonized regions offline.

[0026] Preferably, the step of dynamically adjusting the processing parameters of subsequent areas based on monitoring data includes: When a discontinuity in crack propagation is detected in the edge region, the density of the guide layer in the edge region is increased by 20% or the guide layer is switched to a biorthogonal mesh topology. When the thickness deviation of the modified layer is detected to exceed ±20%, the single pulse energy of the first laser in that area is adjusted by ±10% or the scanning speed by ±15%. When a crack deflection angle exceeding 5° is detected, the orientation of the guiding layer is adjusted to be closer to the orientation of the low fracture toughness cleavage plane. When the detected fluctuation in plasma luminescence intensity exceeds a preset threshold, the scanning speed is reduced or the density of the pre-modified guiding layer is increased.

[0027] The present invention also provides a silicon carbide ingot laser stealth cutting system for performing the aforementioned silicon carbide ingot laser stealth cutting method, comprising a first laser processing module, a second laser processing module, and a control module, wherein the control module controls the first laser processing module to form a pre-modified guiding layer and controls the second laser processing module to form the main modified layer.

[0028] The present invention has the following beneficial effects: The method provided by this invention involves first forming a low-residue, non-penetrating, and continuously carbonized restricted pre-modified guiding layer near the target slice layer using a first laser, and then forming a main modified layer in the region adjacent to the pre-modified guiding layer using a second laser. The pre-modified guiding layer is not intended to form a continuous strong absorption layer, but rather guides the energy deposition position, continuity, and crack propagation direction of the subsequent main modified layer through localized amorphization, defect states, micro-stress fields, or refractive index changes. This reduces the risk of heat-affected zone expansion, axial deep damage, and premature longitudinal crack propagation caused by the strong absorption carbonized layer; it also improves the controllability of the main modified layer position and crack propagation path, thereby improving slice thickness consistency, peeling stability, and separation surface quality.

[0029] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the written description and the accompanying drawings.

[0030] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0031] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings: Figure 1 This is a schematic flowchart illustrating a laser hidden cutting method for silicon carbide ingots, as proposed in this invention. Detailed Implementation

[0032] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0033] like Figure 1 As shown, the present invention provides a laser hidden sectioning method for silicon carbide ingots, comprising the following steps: A pre-modification guiding layer is formed inside a silicon carbide ingot using a first laser. The pre-modification guiding layer is a continuous carbonization-restricted, discrete, or quasi-discrete local structural change layer located near the target slice layer. A second laser is used to form a main modified layer in the region adjacent to the pre-modified guiding layer, wherein the single-pulse energy and / or power density of the second laser is higher than that of the first laser; The silicon carbide ingot is peeled off along the main modified layer to obtain silicon carbide slices; wherein, the pre-modified guiding layer guides the energy deposition position, the continuity of the modified layer and the crack propagation direction of the main modified layer through at least one of local amorphization, defect state, micro-stress field or refractive index change.

[0034] The method provided by this invention reduces the risk of heat-affected zone expansion and deep damage caused by continuous carbonization absorption layer, improves the controllability of the formation location and continuity of the main modified layer, improves the crack propagation direction through lattice, linear array or grid-based guiding structure, and can adjust the density and arrangement direction of the guiding layer according to the difference between the central area and the edge area, which is beneficial to reduce peel load fluctuation and separation surface roughness.

[0035] The “continuous carbonization restriction” of the pre-modified guiding layer has two meanings: Carbonization is limited: the modification is mainly based on amorphization phase transition, defect state changes, and micro-stress field reconstruction, rather than the large-scale decomposition of SiC into free carbon. Carbonization is only allowed to occur in localized high-energy regions, and the total area ratio is controlled below a preset threshold (e.g., ≤15%), thereby utilizing local absorption enhancement to avoid the formation of a continuous strong absorption layer.

[0036] Spatially discontinuous: The guiding layer is spatially lattice-like, linear, grid-like, discontinuous stripe, or a combination thereof, rather than a complete continuous layer. The spacing between adjacent modified regions ensures that the guiding layer only serves a "guiding" function and does not form a penetrating absorption layer or prematurely penetrate the crack surface.

[0037] Pre-modified guiding layers with different densities, spacings, or orientations are formed in the central region, the middle ring region, and the edge region. These pre-modified guiding layers are used to reduce energy threshold fluctuations during the formation of the main modified layer, rather than to form a penetrating absorption layer.

[0038] The pre-modified guiding layer guides the second laser's action by altering local defect states, local stress fields, or local refractive index distributions. Specifically, it guides energy deposition: the amorphous region enhances absorption of the subsequent second laser, causing the energy of the main modified layer to preferentially deposit near the pre-modified region. It also guides crack orientation: the amorphous region in the pre-modified guiding layer acts as a stress concentration point and crack initiation point, coordinating with a local micro-stress field to guide crack propagation along the target slice surface. Finally, it guides threshold adjustment: the altered material properties of the pre-modified region reduce energy threshold fluctuations in the formation of the main modified layer.

[0039] When the second laser forms the main modified layer, its scanning direction has a preset angle relative to the arrangement direction of the pre-modified guiding layer. When discontinuous crack propagation is detected in the edge region, the density of the pre-modified guiding layer in the edge region is increased or its arrangement direction is changed.

[0040] The stripping includes applying shear loads, tensile loads, bending loads, ultrasonic disturbances, or combinations thereof along the main modified layer.

[0041] The silicon carbide ingot is a conductive, semi-insulating, or optical grade silicon carbide ingot.

[0042] The invention will now be described in conjunction with specific application scenarios.

[0043] Example 1: Lattice-type non-carbonized pre-modified guiding layer A lattice-type pre-modified guiding layer is formed 10 μm above the target slice layer of an 8-inch 4H-SiC ingot using a first-pulse laser. The center wavelength of the first laser is 1030 nm or 1064 nm, the pulse width is 200 fs-20 ps or 1-10 ns, the repetition frequency is 50-200 kHz, the single-pulse energy is 5-10 μJ, and the numerical aperture of the focusing objective is 0.4-0.65. The single-pulse energy of the first laser is lower than that of the master dicing laser, and the dot spacing is less than or equal to the diameter of the pre-modified particles, so as to form local structural changes without forming a continuous carbonization layer.

[0044] Subsequently, a second-pulse laser is used to form the primary modified layer at the target slice. The center wavelength of the second laser is 1030 nm or 1064 nm, the repetition frequency is 50-200 kHz, and the single-pulse energy is 15-45 μJ, with the single-pulse energy of the second laser being 2-5 times that of the first laser. The diameter of the primary modified particles is 15-60 μm, and the spacing between the particles is less than or equal to the diameter of the primary modified particles, resulting in a continuous or quasi-continuous modified zone in the primary modified layer. Because the pre-modified particle lattice adjusts the local energy threshold and micro-stress field, the continuity of the primary modified layer is improved, and the crack propagation direction is closer to the target slice surface.

[0045] Example 2: High-density guiding layer in the edge region For ingots with low transmittance and large stress fluctuations in the edge region, the lattice density of the pre-modified guiding layer in the edge region is increased, and the arrangement direction of the guiding layer forms a preset angle with the main scanning direction.

[0046] This setting reduces the probability of discontinuity in the main modified layer and crack deflection in the edge region, and significantly reduces edge breakage after peeling.

[0047] Comparative Example The comparative example uses a continuous carbonized absorber layer as a pretreatment layer.

[0048] As shown in Table 1, although the comparative example can enhance subsequent main shear absorption, the local heat-affected zone is large, and longitudinal cracks propagate prematurely and the roughness of the separation surface increases in some areas. This invention employs a discrete pre-modified guiding layer with limited continuous carbonization, reducing the above risks and improving the controllability of the main modified layer's location, continuity, and crack propagation direction.

[0049] Table 1

[0050] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. A method for laser slicing of silicon carbide ingots, characterized in that, Includes the following steps: A pre-modification guiding layer is formed near the target slice layer of a silicon carbide ingot using a first laser. The pre-modification guiding layer is a discrete or quasi-discrete local structure change layer, and the area ratio of the continuous carbonization region in the pre-modification guiding layer is lower than a preset threshold. A second laser is used to form a main modified layer in the region adjacent to the pre-modified guiding layer, wherein the single-pulse energy and / or power density of the second laser is higher than that of the first laser; The silicon carbide ingot is peeled off along the main modified layer to obtain silicon carbide slices; wherein, the pre-modified guiding layer guides the energy deposition position, the continuity of the modified layer and the crack propagation direction of the main modified layer through at least one of local amorphization, defect state, micro-stress field or refractive index change.

2. The laser slicing method for silicon carbide ingots according to claim 1, characterized in that, The pre-modified guiding layer includes a dot matrix, a linear matrix, a grid array, discontinuous stripes, or a combination thereof.

3. The laser slicing method for silicon carbide ingots according to claim 1, characterized in that, The distance between the pre-modified guiding layer and the main modified layer is 1-50 μm, preferably 5-30 μm, and more preferably 8-20 μm.

4. The laser slicing method for silicon carbide ingots according to claim 1, characterized in that, The thickness of the pre-modified guiding layer is less than the thickness of the main modified layer.

5. The laser hidden sectioning method for silicon carbide ingots according to claim 1, characterized in that, The area ratio of the continuous carbonized region in the pre-modified guiding layer is lower than a preset threshold, which is determined by at least one of Raman carbon peak, transmittance change, OCT scattering intensity or microscopic image recognition results.

6. The laser hidden sectioning method for silicon carbide ingots according to claim 1, characterized in that, The single-pulse energy of the first laser is lower than that of the second laser.

7. The laser hidden sectioning method for silicon carbide ingots according to claim 1, characterized in that, Both the first and second lasers are pulsed lasers with center wavelengths of 1030 nm or 1064 nm, pulse widths of 100 fs-100 ns (preferably 200 fs-20 ps or 1-10 ns), repetition frequencies of 20-500 kHz (preferably 50-200 kHz), and numerical apertures of the focusing objective of 0.3-0.8 (preferably 0.4-0.65). The single-pulse energy of the first laser is 3-15 μJ (preferably 5-10 μJ), and the scanning speed is 400-1000 mm / s. The single-pulse energy of the second laser is 10-60 μJ (preferably 15-45 μJ), and the scanning speed is 40-800 mm / s. The single-pulse energy of the second laser is 1.5-8 times that of the first laser (preferably 2-5 times). The average output power is set according to the single-pulse energy and repetition frequency using the formula P=E×f. The processing focal depth is 100-800 nm. μm, preferably 150-500 μm, pre-modified particle diameter is 5-25 μm, main modified particle diameter is 15-60 μm, the particle spacing is less than or equal to the corresponding modified particle diameter, and the line spacing is 10-100 μm, preferably 20-75 μm.

8. The laser hidden sectioning method for silicon carbide ingots according to claim 1, characterized in that, It also includes the following steps: Obtain the three-dimensional distribution information of material parameters of silicon carbide ingots; Based on the three-dimensional distribution information of the material parameters, a topology optimization algorithm is used to generate a geometric topology scheme for the pre-modified guiding layer. The geometric topology scheme includes at least the density distribution, arrangement direction and geometric configuration type of the pre-modified guiding layer. According to the geometric topology scheme, the first laser is controlled to form a pre-modified guiding layer inside the silicon carbide ingot.

9. The laser hidden sectioning method for silicon carbide ingots according to claim 8, characterized in that, The topology optimization algorithm is a multi-objective genetic algorithm, or the geometric topology scheme is generated by a parameter rule table based on material parameter partitioning; wherein, the decision variables of the multi-objective genetic algorithm or parameter rule table include: a guide layer density distribution variable, including the central region density Dc, the middle ring region density Dm, and the edge region density De; a guide layer alignment direction variable, including the central region angle θc, the middle ring region angle θm, and the edge region angle θe, wherein the angle is the angle between the guide layer alignment direction and the crystal orientation; and a guide layer geometric configuration type variable, selected from lattice, linear array, mesh, spiral, concentric ring, or fractal topology.

10. A laser stealth cutting system for silicon carbide ingots, characterized in that, The method for performing the laser stealth cutting of silicon carbide ingots according to any one of claims 1-9 includes a first laser processing module, a second laser processing module, and a control module, wherein the control module is used to control the first laser processing module to form a pre-modified guiding layer and to control the second laser processing module to form the main modified layer.

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