Chemical mechanical planarization (CMP) machine with improved architecture

Abstract

Chemical mechanical planarization (CMP) machines having improved architecture are provided. In one aspect, a chemical mechanical planarization apparatus includes a column, a first substrate carrier head system, and a second substrate carrier head system. Each of the first and second carrier head systems includes a polishing arm coupled to the column and a wafer carrier coupled to the polishing arm and configured to hold a substrate. The CMP apparatus also includes a platen configured to polish at least one of a first substrate held by the first carrier head system and a second substrate held by the second carrier head system. The column overlaps at least a portion of the platen.

Description

[0001] Cross-references to related applications

[0002] Any and all applications that identify foreign or domestic priority claims in the application data sheet filed with this application are incorporated herein by reference in accordance with 37 CFR 1.57. This application claims the benefit of U.S. Provisional Application No. 63 / 776,786, filed March 24, 2025, the entire contents of which are incorporated herein by reference in accordance with 37 CFR 1.57. Technical Field

[0003] The disclosed technology relates to semiconductor processing equipment, and more specifically, to chemical mechanical planarization (CMP) systems and devices that have a reduced footprint and allow for the handling and manipulation of objects in a compact space. Background Technology

[0004] CMP machines are widely used in the semiconductor manufacturing industry.

[0005] A machine with a fundamentally different architecture is needed to provide a solution to some of the demands in today's market. The types of machines available today limit throughput due to limited wafer handling and multi-wafer processing options. Summary of the Invention

[0006] The purpose of the disclosed technology is to provide an improved chemical mechanical planarization (CMP) apparatus with reduced footprint and increased yield and functionality.

[0007] In one aspect, a chemical mechanical planarization (CMP) apparatus is provided. The CMP apparatus includes pillars, a first substrate carrier head system, and a second substrate carrier head system. Each of the first and second substrate carrier head systems includes a polishing arm connected to the pillar and a wafer carrier connected to the polishing arm and configured to hold the substrate. The CMP apparatus also includes a pressure plate configured to polish at least one of a first substrate held by the first substrate carrier head system and a second substrate held by the second substrate carrier head system, wherein at least a portion of the pillar overlaps with the pressure plate.

[0008] In some embodiments, the CMP apparatus further includes a pillar support disposed above the pressure plate, wherein the pillar support is configured to support the pillar and the first and second substrate carrier head systems.

[0009] In some embodiments, the pressure plate is configured to simultaneously polish the first substrate and the second substrate in different regions of the pressure plate. In some embodiments, the pillar substantially completely overlaps with the pressure plate.

[0010] In some embodiments, the CMP apparatus further includes a pad conditioner configured to sweep substantially the entire pressure plate during simultaneous polishing of the first and second substrates.

[0011] In some embodiments, the CMP apparatus further includes a first arcuate sweep pad conditioner configured to sweep a portion of a pressure plate upstream of a first substrate carrier head system during simultaneous polishing of the first and second substrates, and a second arcuate sweep pad conditioner configured to sweep a portion of a pressure plate upstream of a second substrate carrier head system during simultaneous polishing of the first and second substrates.

[0012] In some embodiments, the CMP apparatus further includes multiple transfer stations configured to hold the substrate before and after polishing. In some embodiments, the CMP apparatus further includes a central wafer handling robot configured to load the substrate into and unload the substrate from the transfer stations.

[0013] In some embodiments, the CMP apparatus also includes multiple wafer handling robots configured to load substrates to and unload substrates from transfer stations.

[0014] In another aspect, a chemical mechanical planarization apparatus is provided, comprising: a pillar support; a first pillar and a second pillar, the first and second pillars being structurally supported by the pillar support; a first substrate carrier head system and a second substrate carrier head system, the first and second substrate carrier head systems being structurally supported by the first pillar; and a third substrate carrier head system and a fourth substrate carrier head system, the third and fourth substrate carrier head systems being structurally supported by the second pillar. The apparatus further includes a first pressure plate configured to polish at least one of a first substrate held by the first substrate carrier head system and a second substrate held by the second substrate carrier head system, and a second pressure plate configured to polish at least one of a third substrate held by the third substrate carrier head system and a fourth substrate held by the fourth substrate carrier head system, wherein at least a portion of the first pillar overlaps with at least a portion of the first pressure plate, and at least a portion of the second pillar overlaps with at least a portion of the second pressure plate.

[0015] In some embodiments, the first pressure plate is configured to simultaneously polish the first substrate and the second substrate in different regions of the first pressure plate, and the second pressure plate is configured to simultaneously polish the third substrate and the fourth substrate in different regions of the second pressure plate.

[0016] In some embodiments, the device further includes a third pressure plate configured to polish a second substrate and a fourth pressure plate configured to polish a fourth substrate, wherein the first pillar overlaps with at least a portion of the first pressure plate and a portion of the third pressure plate, and the second pillar overlaps with at least a portion of the second pressure plate and a portion of the fourth pressure plate.

[0017] In some embodiments, the first substrate carrier head system includes a polishing arm connected to a first post and a wafer carrier connected to the polishing arm and configured to hold the first substrate.

[0018] In some embodiments, pillar supports are arranged above pressure plates. In some embodiments, a first pillar is located above the plane of a first pressure plate, and a second pillar is located above the plane of a second pressure plate. In some embodiments, the apparatus further includes a plurality of transfer stations configured to hold substrates before and after polishing, and a central wafer handling robot configured to load substrates into and unload substrates from the transfer stations.

[0019] In another aspect, an inverted column assembly for a chemical mechanical planarization apparatus is provided. The inverted column assembly includes a column support and a first column and a second column, the first and second columns being structurally supported by the column support. Each of the first and second columns is configured to support one or more substrate carrier head systems, wherein the first and second columns are located above the plane of one or more pressure plates of the chemical mechanical planarization apparatus.

[0020] In some embodiments, the column support is fixed to a top plate. In some embodiments, the column support is fixed to a support structure located above the chemical mechanical planarization apparatus.

[0021] In some embodiments, the first post overlaps with at least a portion of a first pressure plate in one or more pressure plates, and the second post overlaps with at least a portion of a second pressure plate in one or more pressure plates.

[0022] In another aspect, a chemical mechanical planarization apparatus is provided, comprising: a pillar; a first substrate carrier head system and a second substrate carrier head system, each of the first substrate carrier head system and the second substrate carrier head system including (i) a polishing arm connected to the pillar and (ii) a wafer carrier connected to the polishing arm and configured to hold a substrate; and a pressure plate configured to polish at least one of a first substrate held by the first substrate carrier head system and a second substrate held by the second substrate carrier head system, wherein at least a portion of the pillar overlaps with the pressure plate.

[0023] In some embodiments, the chemical mechanical planarization apparatus further includes a column support disposed above the pressure plate, the column support being configured to support the column, the first substrate carrier head system, and the second substrate carrier head system.

[0024] In some embodiments, the column is located above the plane of the pressure plate.

[0025] In some embodiments, the pressure plate is configured to simultaneously polish the first substrate and the second substrate in different regions of the pressure plate.

[0026] In some embodiments, the column substantially overlaps the pressure plate.

[0027] In some embodiments, the chemical mechanical planarization apparatus further includes a pad conditioner configured to sweep substantially the entire pressure plate during simultaneous polishing of the first and second substrates.

[0028] In some embodiments, the chemical mechanical planarization apparatus further includes a first arcuate sweep pad conditioner configured to sweep a portion of a pressure plate upstream of the first substrate carrier head system during simultaneous polishing of the first and second substrates, and a second arcuate sweep pad conditioner configured to sweep a portion of a pressure plate upstream of the second substrate carrier head system during simultaneous polishing of the first and second substrates.

[0029] In some embodiments, the chemical mechanical planarization apparatus further includes a plurality of transfer stations configured to hold the substrate before and after polishing the substrate.

[0030] In some embodiments, the chemical mechanical planarization apparatus further includes a central wafer handling robot configured to load substrates to and unload substrates from multiple transfer stations.

[0031] In some embodiments, the chemical mechanical planarization apparatus further includes multiple wafer handling robots configured to load substrates to and unload substrates from multiple transfer stations.

[0032] In some embodiments, the column is rotatably coupled to a column support such that the column is configured to rotate relative to the column support about a generally vertical axis.

[0033] In some embodiments, the chemical mechanical planarization apparatus further includes: a motor configured to drive rotation of a column; at least one bearing supporting the column during rotation; and a sensor configured to provide rotational position feedback to a controller.

[0034] In some embodiments, the column support includes one or more internal routing paths, raceways, or channels configured to route one or more of the following between the elevated power source and the column: electricity, control signals, data communications, pneumatic pressure, vacuum, coolant, or processing fluid.

[0035] In some embodiments, the chemical mechanical planarization apparatus further includes one or more rotary couplings configured to maintain connectivity of one or more of the following during rotation of the column relative to the column support: electrical power, control signals, data communication, pneumatic pressure, vacuum, coolant, or process fluid.

[0036] In another aspect, a chemical mechanical planarization apparatus is provided, comprising: a column support; a first column and a second column, the first column and the second column being structurally supported by the column support; a first substrate carrier head system and a second substrate carrier head system, the first substrate carrier head system and the second substrate carrier head system being structurally supported by the first column; a third substrate carrier head system and a fourth substrate carrier head system, the third substrate carrier head system and the fourth substrate carrier head system being structurally supported by the second column; a first pressure plate configured to polish at least one of a first substrate held by the first substrate carrier head system and a second substrate held by the second substrate carrier head system; and a second pressure plate configured to polish at least one of a third substrate held by the third substrate carrier head system and a fourth substrate held by the fourth substrate carrier head system, wherein at least a portion of the first column overlaps with at least a portion of the first pressure plate, and at least a portion of the second column overlaps with at least a portion of the second pressure plate.

[0037] In some embodiments, the first pressure plate is configured to simultaneously polish the first substrate and the second substrate in different regions of the first pressure plate, and the second pressure plate is configured to simultaneously polish the third substrate and the fourth substrate in different regions of the second pressure plate.

[0038] In some embodiments, the chemical mechanical planarization apparatus further includes a pad dresser for each of the first and second pressure plates, each pad dresser being configured to sweep across substantially the entire diameter of the corresponding pressure plate during simultaneous polishing.

[0039] In some embodiments, the chemical mechanical planarization apparatus further includes, for each of the first and second pressure plates, a first arcuate sweep pad conditioner configured to sweep a portion of the corresponding pressure plate upstream of the first wafer carrier during simultaneous polishing; and a second arcuate sweep pad conditioner configured to sweep a portion of the corresponding pressure plate upstream of the second wafer carrier during simultaneous polishing.

[0040] In some embodiments, the column support is arranged above the first pressure plate and the second pressure plate, with the first column located above the plane of the first pressure plate and the second column located above the plane of the second pressure plate.

[0041] In some embodiments, the column support includes an elevated frame or platform configured to support multiple columns and distribute one or more functions to the multiple columns via one or more shared function manifolds, distribution blocks, or routing channels.

[0042] On the other hand, an inverted column assembly for a chemical mechanical planarization apparatus is provided, the inverted column assembly for the chemical mechanical planarization apparatus comprising: a column support; and a first column and a second column, the first column and the second column being structurally supported by the column support, each of the first column and the second column being configured to support one or more substrate carrier head systems, the first column and the second column being located above the plane of one or more pressure plates of the chemical mechanical planarization apparatus.

[0043] In some embodiments, the column support is fixed to the top plate.

[0044] In some embodiments, the column support is fixed to a support structure located above the chemical mechanical planarization apparatus.

[0045] In some embodiments, the first post overlaps with at least a portion of a first pressure plate in one or more pressure plates, and the second post overlaps with at least a portion of a second pressure plate in one or more pressure plates.

[0046] In some embodiments, the column support includes one or more internal routing paths, raceways, or channels configured to route one or more of power, control signals, data communications, pneumatic pressure, vacuum, coolant, or processing fluid to at least one of the first or second columns.

[0047] In some embodiments, the inverted column assembly for a chemical mechanical planarization apparatus further includes vibration isolation between the facility structure and the column support and / or between the column support and at least one of the first or second columns.

[0048] In another aspect, a chemical mechanical planarization apparatus is provided, comprising: a pillar support disposed above one or more pressure plates; a pillar structurally supported by the pillar support; two or more substrate carrier head systems structurally supported by the pillar, each substrate carrier head system comprising: (i) a polishing arm connected to the pillar; and (ii) a wafer carrier connected to the polishing arm and configured to hold a substrate; and one or more pressure plates configured to polish one or more substrates held by the two or more substrate carrier head systems, wherein the pillar overlaps at least a portion of at least one of the one or more pressure plates.

[0049] In some embodiments, the column is located above the plane of at least one pressure plate.

[0050] In some embodiments, one or more pressure plates include pressure plates configured to simultaneously polish a first substrate held by a first substrate carrier head system in two or more substrate carrier head systems and a second substrate held by a second substrate carrier head system in two or more substrate carrier head systems on different regions of the pressure plate.

[0051] In some embodiments, the chemical mechanical planarization apparatus further includes a pad conditioner configured to condition polishing pads on a pressure plate in a single-substrate polishing mode and a dual-substrate polishing mode.

[0052] In some embodiments, the pad trimmer is configured to sweep substantially the entire pressure plate.

[0053] In some embodiments, the chemical mechanical planarization apparatus further includes a first arcuate sweep pad trimmer configured to sweep a portion of a pressure plate upstream of a first substrate carrier head system, and a second arcuate sweep pad trimmer configured to sweep a portion of a pressure plate upstream of a second substrate carrier head system.

[0054] On another front, a chemical mechanical planarization apparatus is provided, comprising: a pillar support; a first pillar and a second pillar, the first and second pillars being structurally supported by the pillar support; a first substrate carrier head system and a second substrate carrier head system, the first and second substrate carrier head systems being structurally supported by the first pillar, each of the first and second substrate carrier head systems including (i) a polishing arm connected to the first pillar and (ii) a wafer carrier connected to the polishing arm and configured to hold a substrate; a third substrate carrier head system and a fourth substrate carrier head system, the third and fourth substrate carrier head systems being structurally supported by a second pillar, the third substrate carrier... Each of the body head system and the fourth substrate carrier head system includes (i) a polishing arm connected to the second post and (ii) a wafer carrier connected to the polishing arm and configured to hold the substrate; a first pressure plate configured to polish at least one of a first substrate held by the first substrate carrier head system and a second substrate held by the second substrate carrier head system; a second pressure plate configured to polish at least one of a third substrate held by the third substrate carrier head system and a fourth substrate held by the fourth substrate carrier head system; and a third pressure plate and a fourth pressure plate, wherein the first post overlaps at least a portion of the first pressure plate or at least one of the third pressure plate, and the second post overlaps at least a portion of the second pressure plate or at least one of the fourth pressure plate.

[0055] In some embodiments, the column support is arranged above the first pressure plate, the second pressure plate, the third pressure plate, and the fourth pressure plate.

[0056] In some embodiments, the first post is located above the plane of the first pressure plate and above the plane of the third pressure plate, and the second post is located above the plane of the second pressure plate and above the plane of the fourth pressure plate.

[0057] In some embodiments, the chemical mechanical planarization apparatus further includes: a plurality of transfer stations configured to hold the substrate before and after polishing the substrate; and a central wafer handling robot configured to load the substrate onto and unload the substrate from the plurality of transfer stations.

[0058] In some embodiments, at least one of the first or second pressure plates is configured to simultaneously polish two substrates on different areas of the pressure plates.

[0059] In some embodiments, the column support includes an elevated frame or platform configured to support multiple columns and distribute one or more functions to the multiple columns via one or more shared function manifolds, distribution blocks, or routing channels. Attached Figure Description

[0060] The above and additional objects, features, and advantages of the disclosed technology will be better understood from the following illustrative and non-limiting detailed description of embodiments thereof, with reference to the accompanying drawings. In the drawings, the same reference numerals will be used for the same elements unless otherwise stated.

[0061] Figure 1A This is a plan view of a chemical mechanical planarization (CMP) system according to an embodiment of the disclosed technology.

[0062] Figure 1B This is a side view of a CMP system according to an embodiment of the disclosed technology.

[0063] Figure 2 This is a cross-sectional view of an example carrier head assembly of a CMP system.

[0064] Figure 3A and Figure 3B This is a plan view of a CMP device including links according to an embodiment of the disclosed technology.

[0065] Figure 4 This is a plan view of a CMP system including a pressure plate according to an embodiment of the disclosed technology.

[0066] Figure 5 This is an isometric view of an example CMP system according to an embodiment of the disclosed technology.

[0067] Figure 6 This is a flowchart illustrating an example method for operating a CMP system according to an embodiment of the disclosed technology.

[0068] Figure 7 An embodiment of a CMP system with an inverted column assembly according to various aspects of this disclosure is shown.

[0069] Figure 8A and Figure 8B An embodiment of a CMP system with an inverted column assembly according to various aspects of this disclosure is shown.

[0070] Figure 9 A side view of a CMP system with inverted column assemblies according to various aspects of this disclosure is provided. Detailed Implementation

[0071] The disclosed technology relates to a CMP machine that occupies less space than a typical CMP machine and has the operational capability to handle and manipulate wafer objects in a compact space. The disclosed technology also relates to a CMP machine with an articulated arm having an elbow joint and shoulder connected to a support. The disclosed technology further relates to a CMP machine capable of polishing two or more wafers on a single polishing platen as part of an interleaved process, ensuring that critical time periods for wafer polishing are not interrupted or disrupted by polishing subsequent wafers. The disclosed technology also relates to improving offline consumable preparation by providing a system in which platen pads can be efficiently removed and replaced with pre-trimmed platen pads without causing machine downtime, as it relates to utilizing other platens within the system.

[0072] A machine with a fundamentally different architecture is needed to provide a solution to certain needs in today's market. The types of machines available today and their respective drawbacks include: machines that result in reduced throughput due to the need to perform wafer handling and loading / unloading sequentially; machines that can only handle a single wafer per platen; machines that require wafer carriers (also known as carrier heads or wafer carrier head or substrate carrier head systems) to move simultaneously between polishing plates with all other heads due to their fixed connections; machines that cannot use a single platen while the wafer carriers wait for processing and / or wafer loading / unloading operations to be completed on other heads and / or platens; and machines that require transferring wafers from one wafer carrier to another to process wafers between multiple platens.

[0073] The disclosed technology will be described with reference to specific embodiments and certain accompanying drawings. This disclosure is not limited thereto, but is limited only by the claims. The described drawings are illustrative only and not restrictive. In the drawings, the dimensions of some elements may be exaggerated and not drawn to scale for illustrative purposes. Dimensions and relative dimensions do not necessarily correspond to actual reductions in practice of this disclosure.

[0074] Chemical mechanical polishing (CMP) for thin film planarization is common across all companies manufacturing the “chips” for these types of devices, including semiconductor ICs, MEMS devices, LEDs, and many other similar applications. This adoption includes the manufacture of chips for mobile phones, tablets, and other portable devices, as well as desktop and laptop computers. Advances in nanotechnology and microfabrication have brought immense promise for the widespread use and adaptation of digital devices in the medical, automotive, and Internet of Things (“IoT”) fields. Chemical mechanical polishing for thin film planarization was invented and developed by scientists and engineers at IBM in the early 1980s. Today, the process is widely used globally and is one of the truly enabling technologies in the manufacture of virtually all digital devices.

[0075] Integrated circuits are fabricated using multiple and alternating layers of conductive materials (copper, tungsten, aluminum, etc.), insulating layers (silicon dioxide, silicon nitride, etc.), and semiconductor materials (polycrystalline silicon). These layers are sequentially applied to the wafer surface, but due to implanted devices on the surface, topographic undulations are created in the device structure, as in the case of silicon dioxide insulating layers. These unwanted topographic undulations must be flattened or “planarized” before the next layer can be deposited. In the case of copper layers, copper is deposited on the surface to fill contact vias and create efficient vertical paths for the transfer of electrons from one device to another and from one layer to another. This process continues for each applied layer (usually applied via a deposition process). In the case of multilayer conductive materials (multilayer metals), this may result in numerous polishing procedures (one for each layer of conductor, insulator, and semiconductor material) to achieve a successful circuit.

[0076] The CMP process is an enabling technology in multilayer circuit fabrication, making all of this possible.

[0077] Detailed embodiments of the disclosed technology will now be described with reference to the accompanying drawings.

[0078] Figure 1A This is a plan view illustrating an embodiment of a chemical mechanical planarization (CMP) system 100, which includes a support 102 (e.g., a body, column, base, polishing arm support, etc.), an arm 104 (e.g., an elongated member or polishing arm), and a carrier head 106. The arm 104 is attached to the support 102 and has the attached carrier head 106. The CMP system 100 may also include means for rotating the arm attachment (not shown), as discussed further below. The support 102 is a structural support configured to hold the arm 104 and carrier head 106 in a suitable position above one or more polishing plates. Figure 4 and Figure 5(As shown). Additionally, the support 102 is configured to be rotatably attached to the arm 104 of the support 102. In some embodiments, the support 102 or a portion thereof may be rotatable such that the arm 104 attached to the support 102 rotates about the support 102. Alternatively, the support 102 may be configured to be stationary, while the arm 104 attached to the support 102 rotates about the support 102. Figure 1B This is a side view of CMP system 100.

[0079] In some embodiments, the support member 102 is configured to provide electrical and fluid connections to the remainder of the CMP system 100. Therefore, the support member 102 has electrical / electromechanical and fluid connections disposed within the support member 102 and / or along its outer periphery. The electrical connections are configured to transmit power and electrical signals to one or more components of the CMP system 100 and to receive electrical signals from the CMP system 100 as feedback. For example, the CMP system 100 may have wiring, such as Ethernet connections and electrical slip ring assemblies, which can be fed through the bottom of the support member 102 and to various components of the CMP system 100. Furthermore, fluid connections may be included, configured to supply various fluids (e.g., CMP polishing slurries) to the CMP system 100. The fluid connections may provide pneumatic pressure and vacuum forces to the system.

[0080] In an embodiment, the CMP system 100 may be configured to rotate about a rotation axis. Therefore, the support 102 includes means for rotating the arm 104 about the rotation axis. The support 102 may include, for example, an electric motor (e.g., a stepper motor, brushless motor, torque motor, etc.), mechanical gears, magnetic or rotary couplings, or any other means for generating rotational movement on the arm 104 or the support 102.

[0081] exist Figure 1A In the example, the axis of rotation passes through support 102. The degree of rotation is determined by... Figure 1A The θ symbol indicates this. However, the direction of rotation can be either clockwise or counterclockwise. Additionally, the arm 104 and the carrier head 106 can rotate (i.e., coil or unwind) about the axis of rotation in a single direction by at least approximately 270° (i.e., an angular displacement ≥270°). In another embodiment, the rotation of the arm 104 about the axis of rotation can be continuous (i.e., unrestricted), thus the CMP system 100 can have an angular displacement of 360° or greater (i.e., ≥2π radians).

[0082] Additionally, the carrier head 106 attached to the arm can be actuated in both downward (i.e., lowering) and upward (i.e., raising) directions. Therefore, the carrier head 106 can be lowered or raised based on the desired configuration for CMP processing. For example, in a raised configuration, the carrier head 106 or the arm 104 can receive a control signal commanding the carrier head 106 to lower. The carrier head 106 can be lowered until it presses against a polishing pad (not shown). For example, the carrier head 106 can press a wafer held below the base of the carrier head 106 against the polishing pad.

[0083] Figure 2 This is a cross-sectional view of the carrier head 106. The carrier head 106 may include a membrane assembly 205 and a support base 280, to which the membrane assembly 205 is mounted. The support base 280 may be any suitable configuration to provide support to the membrane assembly. The support base 280 may attach and engage the remainder of the carrier head 106 with the CMP system 100.

[0084] As shown in the figure, membrane module 205 may include a support plate 210, an elastic membrane 220, a membrane clamp 230, and an outer pressure ring 240. The support plate 210 can be in any suitable configuration for attaching the membrane module 205 to the support base 280. For example, the support plate 210 can be mounted to the support base 280 using one or more bolts or other suitable attachment elements. The support plate 210 can be mounted to the support base 280 at various locations, such as along the outer periphery of the support base 280.

[0085] The support plate 210 can be any suitable configuration supporting the elastic membrane 220. The elastic membrane 220 can be secured to the support plate 210 in a variety of different ways. The elastic membrane 220 can be secured to the support plate 210 before or after it is secured to the support base 280. The elastic membrane 220 can be secured to the support plate 210 using any of a number of suitable different retaining elements (e.g., membrane clamp 230). In some embodiments, the membrane clamp 230 can be spring-loaded. In other embodiments, the membrane clamp 230 can be securely tightened using fastening mechanisms (e.g., nuts and bolts).

[0086] The elastic membrane 220 can be fixed to the support plate 210, so that the membrane 220 can hold the wafer 270 against the polishing pad and process the wafer, for example, as shown in the reference above. Figure 1B The terms “substrate” and “wafer” are used interchangeably herein and include, for example, semiconductor or silicon wafers, flat panel displays, glass plates or disks, plastic workpieces, and other generally rigid, flat, and thin workpieces of various shapes (e.g., circular, square, rectangular, etc.) and sizes on which one or more embodiments of the devices and processes disclosed herein may be implemented.

[0087] The membrane 220 can have sufficient elasticity and flexibility to reduce wafer breakage when combined with polishing pad materials and process parameters. The membrane 220 and support plate 210 can be configured to allow gas pressure between the membrane 220 and support plate 210 and to press the membrane 220 against the wafer 270 during CMP processing. For example, a basic seal can be formed between the membrane 220 and plate 210. The support plate 210 can be spaced apart from the membrane 220 to form a gap or cavity 260 between them. The cavity 260 can be formed when the membrane 220 is in a static (e.g., unpressurized) state. In some embodiments, when the membrane 220 is in a static state, the membrane 220 rests on or near plate 210, and the cavity 260 is formed when the membrane 220 expands (e.g., pressurized). During planarization, the cavity 260 can redistribute and accommodate changes in gas pressure against the membrane 220, thereby accommodating changes in gas pressure against the wafer 270. As shown, gas pressure can be supplied to the back side of membrane 220 through pneumatic channel 250. Pneumatic channel 250 can be disposed within support plate 210, or gas can be supplied through other configurations. Pneumatic channel 250 can be modified differently depending on the application (e.g., circular tube, square tube, etc.). In some embodiments, the pneumatic channel can provide a vacuum for holding wafer 270 to the underside of the membrane assembly. Membrane 220 may include apertures to provide this vacuum and / or allow positive pressure to disengage wafer 270 from membrane 220.

[0088] In some embodiments, cavity 260 can be formed by spaced the membrane 220 from the support plate 210. For example, the support plate 210 may include a recessed interior portion to form the cavity. In the illustrated embodiment, membrane assembly 205 may include an outer pressure ring 240 to form cavity 260. In other embodiments, the membrane assembly may be assembled without pressure rings. For example, the membrane 220 may rest directly against the support plate 210 without cavity 260 separating the membrane 220 from the support plate 210. In some embodiments, membrane assembly may include one or more pressure rings 240 arranged concentrically.

[0089] In another embodiment, the membrane 220 used may be a multi-region membrane. For example, the membrane 220 may have grooves (e.g., notches) and / or protrusions that effectively isolate the individual regions of the membrane 220. In a non-limiting example, the grooves may be arranged as a series of concentric circles originating from the center of the membrane. In another example, the grooves and protrusions may be irregular shapes (e.g., interconnected circles, non-circular notches, circular patterns scattered on the membrane surface) to improve the pressure distribution applied to the wafer 270 when attached to the membrane assembly.

[0090] The film 220 can be flexible, allowing it to conform to the structure it surrounds. In some cases, the film 220 can be convex. For example, the film 220 can droop at the center. The film 220 can even be shaped into a cone, allowing a small area of ​​the film 220 to contact the wafer surface for finer polishing.

[0091] The membrane material can be any elastic material suitable for planarization, as described herein, and is used, for example, within a carrier head for CMP processes. In some embodiments, the membrane material can be one of rubber or synthetic rubber materials. The membrane material can also be one of ethylene propylene diene monomer (M grade) (EPDM) rubber or silicone resin. Alternatively, it can be one or more combinations of vinyl, rubber, silicone rubber, synthetic rubber, nitrile, thermoplastic elastomer, fluorinated elastomer, hydrated acrylonitrile butadiene rubber, or urethane and polyurethane formulations.

[0092] One or more membrane modules can be implemented within a single CMP system. The CMP system can have control that utilizes feedback from the system during operation to more accurately control the CMP process (e.g., variable speed motor control).

[0093] In some embodiments, refer to Figure 1A , Figure 1B and Figure 2 One or more arms of the described CMP system can be bent or rotated about a second axis of rotation, such that the carrier head can be folded inward toward the support and / or folded outward away from the support. In some cases, the elongated arm may include multiple links that can all rotate about various axes of rotation (i.e., articulated arms or jointed arms).

[0094] Figure 3A and Figure 3B A plan view of an embodiment of a chemical mechanical planarization (CMP) system 300, including links 304 and 306, is shown. The CMP system 300 is substantially similar to... Figures 1A to 1B and Figure 2 The CMP system 100 described herein. However, the CMP system 300 differs in that one or more arms can be bent or rotated about a second axis of rotation, allowing the carrier head 308 to be positioned as described above. Figure 3B The support member is folded inwards as shown, or as... Figure 3A The figure shows a fold that folds outward away from the support in the opposite direction. For example, the CMP system 300 may include a first link 304 attached to the support 302, a second link 306 attached to the first link 304, and a carrier head 308 attached to the second link 306. In a non-limiting example, the links may engage at a central joint (i.e., the elbow).

[0095] In some embodiments, the first link 304 is rotatably attached to the support 302 and defines a first axis of rotation through the support 302. Alternatively, the first link 304 may be rotatably attached to a second link 306, defining a second axis of rotation through the attachment region between the links. Alternatively, the first link 304 may not be configured to rotate, wherein only the second link 306 is configured to rotate about the second axis of rotation. The attachment portion includes means for rotating the second link about the second axis of rotation, including as referenced. Figures 1A to 1B Similar features as described above. (See reference...) Figures 1A to 1B The description also states that electrical and fluid connections can be included throughout the linkage.

[0096] Therefore, the links, including the first link 304 and / or the second link 306, can be configured to rotate about their respective axes of rotation (i.e., a first axis of rotation, a second axis of rotation, etc.). For example, the second link 306 can be configured to rotate about a second axis of rotation passing through the attachment portion of the link. In some embodiments, the second link 306 can be configured to rotate about the second axis of rotation such that the second link 306 extends outward to create a straight line with the other link and the first axis of rotation. In other embodiments, the second link 306 can rotate about the second axis of rotation between 0° and 180°, between 180° and 270°, and between 270° and 360°. For example, the second link 306 can rotate about the second axis of rotation in a substantially unrestricted manner.

[0097] In some embodiments, the links can rotate independently of other links in the link chain and independently of the support 302. In other embodiments, certain links can be coupled together such that their movement depends on the movement of another link or the support 302. For example, one or more links and the support 302 can be coupled together by a rotating gear or a magnet such that when the support or another link rotates, the coupled links or support also move.

[0098] Furthermore, the CMP system may include multiple supports, each having one or more arms attached to it. For example, each support may have two arms. Additionally, each arm may include, as referenced... Figures 3A to 3B The discussion focuses on the linkage. Additionally, multiple pressure plates can be configured near each support member. For example, two pressure plates can be located between two supports, such that each carrier head of the two supports can approach each pressure plate for CMP processing. In another example, a single pressure plate can be configured near two supports, where each carrier head is configured to approach the pressure plate for processing, such as... Figure 4 As shown.

[0099] In some embodiments, the wafer is presented to a designated loading station (not shown) and prepared for loading onto carrier head 308. The transfer of the wafer from the device front-end module (EFEM) to the loading / unloading station is accomplished, for example, by an overhead gantry robot mechanism.

[0100] The carrier head 308 is concentrically positioned above the loading / unloading station (not shown), and the wafer is transferred from the station to the carrier head 106. Those skilled in the art will understand various methods and apparatus for loading and unloading wafers onto the carrier head.

[0101] The carrier head 308 is positioned above the pressure plate as shown in the figure to perform the polishing process. While the polishing process is in progress, the next wafer can be placed onto the loading / unloading station (not shown) for subsequent processing. Once the polishing process is complete, the links 304 and 306 supporting the carrier head 308, and the elbows (i.e., joints) between the links, can be hinged so that the carrier head 308 "folds in" toward the support 302 (as if from...). Figures 3A to 3B As shown in the progress report, this allows the carrier to rotate around the support 302 within a smaller spatial envelope than it would be when folded up. Therefore, this allows the carrier head 308 to be concentrically positioned above the unloading station.

[0102] Then, the carrier head 308 can be rotatably positioned back to the position for transferring subsequent wafers from the loading station to the carrier 308, and the carrier 308 can then be positioned for processing on the pressure plate.

[0103] The processed wafer can then be unloaded onto an unloading station and retrieved by a transfer robot to be returned to EFEM, or more commonly, to the cleaning system.

[0104] To increase system throughput, the same sequence can be applied to a corresponding set of components symmetrically located opposite the pressure plate, such that carrier 308 is processed on the pressure plate while additional loading and unloading stations are used to load wafers onto or unload them from the second carrier head.

[0105] Figure 4 An example embodiment of CMP system 400, similar to the previously described CMP systems 300 and 100, is shown, including a pressure plate 414 configured to process a substrate held by each carrier head 410 and 412. In some embodiments, arms 406 and 408 are substantially similar to arm 104. Alternatively, arms 406 and 408 may include links, such as reference links. Figures 3A to 3B Links 304 and 306 are described. Furthermore, carrier heads 410 and 412 can be substantially similar to carrier head 106 or 308, and supports 404 and 402 can be substantially similar to support 102 or 302. In the illustrative example, pressure plate 414 can be configured in any number of shapes (e.g., circular, square, etc.) and will therefore have a center. Figure 4 In the example, pressure plate 414 is a circle with a center 416. Additionally, the CMP system 400 can be configured with any number of pressure plates, where, for example, each pressure plate or a pair of adjacent pressure plates has multiple corresponding supports.

[0106] Additionally, each arm 406 and 408 can rotate about its respective axis of rotation, which passes through each support 402 and 404. Furthermore, each arm can be configured to rotate about its respective axis of rotation with an angular displacement of 270° or greater. In some cases, arms 406 and / or 408 can be configured to rotate about their respective axes of rotation in a substantially unrestricted manner.

[0107] In some embodiments, the CMP system 400 may include one or more stations for loading wafer objects onto and / or unloading wafer objects from one or more carrier heads. For example, each carrier head may have a dedicated loading and / or unloading station for loading wafers onto or unloading wafers from the carrier head. Two or more carrier heads may have a common loading / unloading station relative to each other for processing on the same or different pressure plates. Additionally, each station may be positioned at approximately the same radial distance from each support 404 and 402. Alternatively, each station may be located at a different radial distance from each support 404 and 402. Each station may be positioned at the same or different radial distances from the supports relative to other stations. Therefore, in Figure 4 In embodiments where one or more arms include linkages, the arms can be hinged to achieve various configurations of various stations, providing greater flexibility in different configurations and positions of various supports.

[0108] Therefore, multiple wafers can be processed on a common platen. This may be desirable in some applications to increase throughput compared to processing a single wafer on a single platen. In a non-limiting example, two or more wafers can be loaded onto carrier heads 410 and 412. Loading can be completed at a loading station (not shown). Additionally, an unloading station may be present, and in some examples, the unloading station has a separate configuration from the loading station. The two carrier heads 410 and 412 can be positioned above platen 414 (as shown) so that two wafers can be processed substantially simultaneously. Once processing of two wafers is complete, the carriers are positioned above a suitable unloading station (not shown) and then above a suitable loading station (not shown) for loading additional wafers onto carriers 410 and 412 for subsequent processing. Alternatively, the carrier heads can process their respective wafers alternately or interleaved. For example, carrier head 410 may process the first wafer on platen 414 for a specified amount of time or a specific percentage of the entire process. Simultaneously, carrier head 412 can be configured in an elevated position, such that carrier head 412 does not press against pressure plate 414 until it receives a control signal to lower its head and process the second wafer against pressure plate 414. When carrier head 412 receives a control signal to lower its head, carrier head 410 can receive a control signal to raise its head, thus ceasing processing of the first wafer. Alternatively, carrier head 410 can remain with its head facing downwards, allowing both carrier heads to be processed simultaneously.

[0109] In addition, regarding Figures 1A to 1B , Figure 2 Figure 3 or Figure 4 The described CMP system can be implemented in many different combinations, for example, such as Figure 5 As shown. For example, Figure 5 A CMP apparatus 500 is shown, comprising a first CMP system 520 and a second CMP system 530. In this illustrated embodiment, each CMP system includes two arms containing linkages and two pressure plates. Thus, each pressure plate is configured to process one or more wafers from each CMP system.

[0110] exist Figure 5 In the example embodiments, CMP systems 520 and 530 have two arms with linkages. Although Figure 5 CMP systems 520 and 530 are shown as having arms including links, but it should be understood that the system can be configured to have one or more arms without links, as shown in Figure 1 and... Figure 4The CMP systems 520 and 530 may have any number of arms extending from their respective supports 502. Furthermore, the CMP device 500 may have any number of pressure plates 512. In some embodiments, two arms attached to a single support 502 may rotate substantially simultaneously in the same direction about a common axis of rotation, thereby changing their positions relative to each other.

[0111] Furthermore, CMP systems 520 and 530 may be equipped with a controller 510 as shown in the figure. Alternatively, the controller 510 may be located within the CMP system (e.g., within the support 502 of CMP systems 520 and / or 530). Additionally, the controller 510 may be an electronic controller, a mechanical controller, a pneumatic controller, or a combination thereof. Furthermore, any of the devices and systems described herein may include a controller configurable to provide the functions and additional functions of the methods described herein (e.g., Figure 5 The controller 510. Additionally, any device and system described herein may include means (e.g., an absolute encoder, etc.) for tracking the orientation and angular displacement of the CMP carrier head. Furthermore, any of the devices and systems described herein may include a pressure plate 512 having a polishing pad configured to rotate or spin. Moreover, any device and system described herein may include a carrier head configured to rotate or spin. For example, a carrier head holding a wafer can rotate the wafer while processing it against a rotating pressure plate 512.

[0112] Furthermore, the aforementioned wafer carrier is attached to the outside of an external linkage (or arm, if there is no linkage), providing pressure to the wafer being processed. The wafer carrier head can descend toward and rise away from the pressure plate 512 as required. The wafer carrier is also configured to support wafer loading and unloading operations before and after CMP processing. Due to the synchronized rotational movement of the two linkages, the carrier head is also configured to move linearly (or radially, if the pressure plate 512 is circular) toward the center of the pressure plate 512 (as described above with respect to center 416). For example, the carrier head can press the wafer against the area of ​​the pressure plate 512. The controller can then command the two linkages to rotate in a synchronized motion, causing the wafer to move toward the center of the pressure plate 512. Furthermore, the carrier head is further configured to oscillate inward and outward along a line or radius.

[0113] In addition, each platen 512 may include a pad conditioner system 540. The pad conditioner 540 may sweep across the entire polishing platen 512 or any portion thereof. The pad conditioner 540 may be configured to condition the pads before, during, and / or after polishing the wafer. For example, the pad conditioner 540 may be configured to sweep across substantially the entire diameter of the platen 512.

[0114] exist Figure 5In one embodiment, the pad conditioner 540 includes an abrasive pad having an abrasive surface facing the pressure plate 512. For example... Figure 5 As shown, the pad trimmer 540 can form a track across the pressure plate 512, and the abrasive pad can travel along the track to sweep across the pressure plate 512.

[0115] Advantageously, the pad conditioner 540 can be configured to sweep the pressure plate 512 during simultaneous processing of the first and second substrates. This can reduce the difference in surface conditions experienced by the two substrates being processed. For example, in some embodiments, by causing the pad conditioner 540 to substantially sweep the entire pressure plate 512, the pad conditioner 540 can alternate between being located upstream of the first substrate carrier head system and upstream of the second substrate carrier head system. Therefore, the pad conditioner 540 is able to provide a more consistent pad surface condition to the substrates held by the first and second substrate carrier head systems. In contrast, a pad conditioner that does not sweep the entire pressure plate 512 will result in different pad surface conditions experienced by the two substrates.

[0116] In another embodiment, in a system having at least two CMP carrier head systems, the CMP controller may be further configured to control any carrier head system to replace the polishing pad (e.g., consumable) on the first platen. In such an embodiment, when the first platen is temporarily offline, the second carrier head system can continue processing the wafer on the second platen. For example, the polishing pad can be prepared or pre-trimmed offline (i.e., away from the CMP processing station). The controller can place the first carrier head system offline (e.g., when the first carrier head is not processing a wafer, such as in maintenance or repair mode). The second carrier head system can continue processing. Thus, the controller can command the first carrier head system to attach the pre-trimmed polishing pad to the system. In some embodiments, this attachment will require removing the carrier head so that the pre-trimmed polishing pad can be attached in its place. In other embodiments, it may be necessary to install a separate attachment in place of the carrier head so that the pre-trimmed polishing pad can be attached to the separate attachment.

[0117] In some embodiments, the CMP system 500 can be configured to advantageously interleave the processing of multiple wafers on multiple pressure plates. For example, the CMP system may include a first carrier head system and a second carrier head system, wherein each system has a first arm and a second arm. Additionally, each arm has a carrier head attached to one end.

[0118] A first carrier head system can process a first wafer on a first platen using a first arm, while a second carrier head system can process a second wafer on a second platen using a second arm. Once the first wafer has been processed for a predetermined amount of time or reached a predetermined percentage of total processing (e.g., 80% processed), the first arm can rotate to move the first wafer to the second platen for a second CMP process. In some embodiments, the first and second CMP processes are different. For example, the first process can be a bulk removal process, while the second process can be a fine removal process, wherein the bulk removal process removes more material from the wafer than the fine removal process. For example, in some embodiments, for the entire process, the bulk removal process removes 80% of the total material removed from the wafer, and the fine removal process removes 20%. Additionally, processing of the second wafer can continue at the second platen. Simultaneously, a third wafer can be loaded using the second arm of the first carrier head system, and once the first wafer has been removed, the third wafer is processed on the first platen, and this process can be repeated for subsequent wafer processing.

[0119] Figure 6 This is a flowchart illustrating an example method 600 for operating a CMP system according to certain embodiments disclosed herein. In some aspects, method 600 may be... Figures 1A to 1B System 100 executes this. In some respects, method 600 can be executed by... Figures 3A to 3B System 300 executes. In some respects, method 600 can be executed by... Figure 4 System 400 executes. In some respects, method 600 can be executed by... Figure 5 The system 500 or other systems will execute.

[0120] In block 610, a CMP system for processing a wafer is provided. The CMP system includes an elongated arm rotatably attached to a support. In block 620, the arm rotates from a first position to a second position. The rotation from the first position to the second position results in an angular displacement greater than 270°.

[0121] Therefore, this invention enables high throughput of processing a single wafer on a single platen by simultaneously processing one wafer during sequential wafer loading and unloading, where two wafers are processed sequentially on the same platen. Furthermore, this disclosure enables high throughput of processing two wafers on a single platen by simultaneously processing two wafers during sequential wafer loading and unloading, where two wafers are processed on the same platen. Moreover, the disclosed technology is configured to result in a duty cycle of approximately 100% for the entire system. For example, due to the configuration and embodiments described herein, the system can experience little to no downtime related to wafer processing. Furthermore, the disclosed technology is configured to result in a reduction in the footprint of each CMP system (i.e., the support and arm) and the entire system as a whole.

[0122] Inverted column assembly for CMP systems

[0123] Combination Figures 1A to 5 The described embodiments of the CMP system include vertical column assemblies (e.g., those shown in Figures 1 and 3 to 3). Figure 5 The vertical column assembly (including supports 102, 302, 402, 404, and 502) can support two or more independent articulated polishing arms. The lower end of the column may include a mounting base for mechanically securing the column to a horizontal deck that structurally supports the column. The column may extend through the plane of the pressure plate, with the lower end of the column attaching to the horizontal deck below the plane of the pressure plate.

[0124] One disadvantage of using columns supported from below the CMP system is that the columns increase the total area occupied by the CMP system. That is, since the pressure plate can have the largest area of ​​components within the CMP system, any component occupying the same plane as the pressure plate will increase the area occupied by the CMP system.

[0125] The aspects of this disclosure improve upon previous embodiments by inverting the column assembly and mounting it onto a support plate located above the polishing plate. For example, the support plate may be mounted onto a top plate or other support structure located above the CMP system. Thus, the column assembly mounted onto a support plate located above the CMP system is inverted compared to a CMP system having a column assembly mounted onto a support member located below the CMP system.

[0126] The pillar assembly of an inverted CMP system allows the horizontal space (e.g., area or footprint) occupied by the pillars to vertically overlap with the space occupied by other machine parts (e.g., polishing plates and dresser assemblies). This arrangement significantly reduces the footprint of the CMP system compared to other conventional CMP systems. This reduction in footprint, in turn, reduces the corresponding area required to operate the CMP system within a semiconductor manufacturing facility, thereby lowering costs and overhead.

[0127] Figure 7 An embodiment of a CMP system 700 with an inverted column assembly according to various aspects of this disclosure is shown. In particular, Figure 7 This is a top view of a CMP system 700, which includes a pillar 702 (also referred to as a "support" or "support pillar"), a polishing arm 704, a polishing platen 706, a transfer station 708, and a wafer carrier 710. In some embodiments, the CMP system 700 may also include a pad cooling system, a polishing slurry delivery system, and / or a pad conditioner (e.g., Figure 5 (Pad trimmer 540).

[0128] As in Figures 1A to 5In one embodiment, the CMP system 700 is configured to polish multiple substrates on a polishing platen 706. For example, the polishing platen 706 is configured to polish at least one substrate held by one of the wafer carriers 710. The wafer carrier 710 can position the substrate above the polishing platen 706 and apply pressure between the substrate and the polishing platen 706 as the polishing platen 706 rotates to polish the substrate. This process can be combined with Figures 1 to 12. Figure 6 The polishing process discussed is basically the same.

[0129] like Figure 7 As shown, each post 702 overlaps with one or more polishing plates 706. The posts 702 are arranged above the polishing plates 706 such that the polishing plates 706 can support the polishing arms 704 and the wafer carrier 710 at a position above the polishing plates 706. In this embodiment, the CMP system 700 includes two posts 702, four polishing arms 704, and four plates 706. However, aspects of this disclosure are not limited thereto, and the CMP system may include more or fewer posts 702, arms 704, and / or plates 706 without departing from aspects of this disclosure. Figure 7 As shown in the configuration, the CMP system 700 can process one wafer at a time on each of the four pressure plates 706. In this case, the design of the trimming arm 704 is not particularly limited because there is only one wafer / wafer carrier 710 on each pressure plate 706.

[0130] In some embodiments, the CMP system 700 may further include a central wafer handling robot 716 configured to handle wafers within the CMP system 700. For example, the central wafer handling robot 716 may include vacuum suction configured to lift the wafer and move / move the wafer from transfer station 708. Transfer station 708 may be configured to hold the substrate before and after polishing the substrate on polishing platen 706.

[0131] Figure 8A and Figure 8B Embodiments of a CMP system with inverted column assemblies according to various aspects of this disclosure are shown. Specifically, Figure 8A A CMP system 800 using a pad dresser with a sweep polishing plate is shown, while Figure 8B A CMP system 850 using arc-shaped sweep pad dressers is shown, with each arc-shaped sweep pad dresser sweeping a portion of the polishing plate.

[0132] CMP system 800 includes pillars 802, polishing arms 804, polishing plates 806, transfer station 808, wafer carrier 810, and pad conditioner 812. In the illustrated embodiment, CMP system 800 includes two pillars 802, four polishing arms 804, and two plates 806. Furthermore, in this embodiment, each pillar 802 substantially completely overlaps with its corresponding polishing plate 806.

[0133] Figure 8A The CMP system 800 can perform both single-wafer polishing and dual-wafer polishing modes. Therefore, the CMP system 800 can be configured to simultaneously polish two substrates on different areas of one of the polishing plates 806. In summary, this allows the CMP system 800 to polish up to four substrates simultaneously using only two polishing plates 806.

[0134] In some embodiments, the CMP system 800 may further include a pad conditioner 812 for each polishing plate 806. The pad conditioner 812 may be similar to a combination Figure 5 The pad dresser 540 is described. By including the pad dresser 812, dual-mode polishing can be improved by sweeping a single pad dresser disc across the entire diameter of the corresponding polishing plate 806 using the pad dresser 812.

[0135] refer to Figure 8B The CMP system 850 includes two arc-shaped sweep pad dressers 814 for each polishing plate 806. Other components of the CMP system 850 can be integrated with… Figure 8A The CMP system 800 is essentially the same. For each polishing platen 806, an arc-shaped sweep pad conditioner 814 can be placed upstream of the first one in the wafer carrier 810, and a second arc-shaped sweep pad conditioner 814 can be placed upstream of the second one in the wafer carrier 810.

[0136] exist Figure 8A and Figure 8B In some embodiments, each of the pad dresser 812 or the arc-shaped sweep pad dresser 814 may include a pad dressing disc, which may have a grinding surface facing the pressure plate 806. Figure 8A As shown, the pad trimmer 812 can form a track across the pressure plate 806, and the pad trimmer disc can travel along the track to sweep the pressure plate 806. Figure 8B The arc-shaped sweep pad dresser 814 shown is arranged along the arc-shaped sweep pad dressing disc formed between the center of the polishing plate 806 and the edge of the polishing plate 806.

[0137] Advantageously, the pad conditioner 812 or the arc-swept pad conditioner 814 can be configured to condition the pressure plate 806 while simultaneously processing two substrates. This can reduce the difference in surface conditions experienced by the two substrates processed by a single pressure plate 806. For example, in some embodiments, by causing the pad conditioner 812 to sweep substantially the entire pressure plate 806, the pad conditioner 812 can alternate between being located upstream of the first wafer carrier 810 and upstream of the second wafer carrier 810. Thus, the pad conditioner 812 is able to provide a more consistent pad surface condition to the substrate held by the wafer carrier 810. Similarly, because the arc-swept pad conditioners 814 are each located upstream of their respective wafer carriers 810, the arc-swept pad conditioners 814 are also able to provide a more consistent pad surface condition to the substrate held by the wafer carrier 810. In contrast, a pad conditioner that does not sweep the entire pressure plate 806 will result in the two substrates experiencing different pad surface conditions.

[0138] In some embodiments, the CMP system 800 may further include a central wafer handling robot 816 configured to handle wafers within the CMP system 800. For example, the central wafer handling robot 816 may include vacuum suction configured to lift the wafer and move / move the wafer to / from transfer station 808. In other embodiments, the CMP system 800 may include two or more wafer handling robots 818 configured to move / move wafers to / from transfer station 808. In the illustrated embodiment, the CMP system 800 may include two wafer handling robots 818 arranged on opposite sides of the CMP system 800. Advantageously, including two or more wafer handling robots 818 can increase the system's throughput.

[0139] Figure 9 A side view of a CMP system 800 with an inverted column assembly is provided according to various aspects of this disclosure. Figure 9 The CMP system 800 can be used with Figure 8A The CMP system is basically the same as the 800.

[0140] exist Figure 9 In one embodiment, the CMP system includes a pillar 802, a polishing arm 804, a polishing platen 806, a transfer station 808, a wafer carrier 810, and a pad conditioner 812. For example... Figure 9 As shown in the side view, post 802 does not extend through the plane containing polishing plate 806. Therefore, post 802 is located above the plane of polishing plate 806.

[0141] The CMP system 800 also includes column supports 820 configured to support two columns 802 from above. The column supports 820 can be secured to a top plate and / or support structure located above the CMP system 800. Therefore, the CMP system 800 includes structurally top-supported, inverted-oriented columns.

[0142] The column support 820 is configured to support the weight of each of the column 802, the polishing arm 804, and the wafer carrier 810. Therefore, the column support 820 provides structural support for the polishing arm 804 and the wafer carrier 810 via the column 802. Although not in... Figure 7 , Figure 8A and Figure 8B As shown, but CMP systems 700, 800 and 850 may each include column supports configured to support columns 702 and 802.

[0143] In some embodiments, one or more of the columns (e.g., column 802) are rotatably coupled to a column support (e.g., column support 820) such that the column is configured to rotate relative to the column support about a substantially vertical axis. In such embodiments, rotation of the column can be used to align one or more polishing arms with one or more pressure plates, one or more transfer stations, and / or one or more maintenance positions. The column may be driven by a motor (e.g., a torque motor or a servo motor) coupled to the column via a gearbox, belt driver, direct drive coupling, and / or other rotary transmission means. The CMP system may include one or more bearings supporting the rotating column and one or more sensors (e.g., absolute encoders) configured to provide rotational position feedback to a controller.

[0144] In some embodiments, the column support includes one or more internal routing paths, raceways, or channels configured to route power, control signals, data communications, pneumatic pressure, vacuum, coolant, and / or process fluids between the overhead power source and one or more columns. In some embodiments, one or more such powers pass downward through the interior of the column and further through one or more arms to reach the wafer carrier. In embodiments including rotatable columns, the CMP system may include one or more rotating electrical couplings (e.g., slip rings) and / or rotating fluid couplings (e.g., rotary joints) to facilitate continuous or repetitive rotation while maintaining electrical and / or fluid connectivity.

[0145] In some embodiments, the column is removably coupled to a column support for easy maintenance and replacement. For example, the column can be mechanically coupled to the column support using one or more removable fasteners, motion mounts, clamps, bayonet couplings, and / or quick-release couplings. In some embodiments, the CMP system includes quick-disconnect functional couplings for one or more of electrical, data, pneumatic, vacuum, coolant, and / or process fluid lines, allowing the column and / or column mounting subassemblies to be removed from the CMP system with reduced downtime.

[0146] In some embodiments, the CMP system includes vibration isolation between the facility structure and column assemblies. For example, vibration isolators may be positioned between the top plate or elevated facility frame and the column supports, and / or between the column supports and one or more columns. Vibration isolators may include elastomeric mounts, spring isolators, pneumatic isolators, viscous dampers, tuned mass dampers, and / or combinations thereof. In some embodiments, vibration isolation is configured to reduce the transmission of facility vibrations to one or more wafer carriers and / or reduce the transmission of vibrations generated by one or more motors of the CMP system to the facility structure.

[0147] In some embodiments, the column support includes an elevated frame or platform configured to support multiple columns and / or multiple CMP modules. In some embodiments, the elevated frame includes standardized mounting interfaces that allow for the installation, repositioning, or replacement of columns. In some embodiments, the elevated frame also includes one or more shared utility manifolds, distribution blocks, and / or routing channels configured to distribute one or more of power, data, pneumatic pressure, vacuum, coolant, and / or process fluids to the multiple columns.

[0148] In some embodiments, the CMP system includes one or more sensors disposed in the arm, arm joint, column, and / or wafer carrier, and a controller configured to operate the CMP system at least in part based on sensor outputs. For example, the sensors may include one or more torque sensors, strain gauges, accelerometers, vibration sensors, pressure sensors, temperature sensors, and / or acoustic emission sensors. In some embodiments, the controller is configured to use the sensor outputs to control one or more of the following: downward force applied to the substrate, carrier head movement, arm movement, platen speed, polishing slurry flow rate, pad dressing parameters, vibration suppression, and / or endpoint detection.

[0149] In some embodiments, one or more pressure plates include an integrated subsystem configured to support polishing in a footprint-reduced architecture. For example, the pressure plate may include one or more integrated coolant channels, fluid pathways, and / or thermal control elements configured to cool the polishing pad, and one or more polishing slurry dispensing components configured to dispense polishing slurry to the polishing pad. In some embodiments, one or more sensors are disposed in or on the pressure plate and / or polishing pad, including temperature sensors, acoustic sensors, optical sensors, impedance sensors, and / or eddy current sensors, and a controller is configured to control at least one CMP parameter based on the sensor outputs.

[0150] In some embodiments, the pad dresser (including a full sweep dresser and / or an arc sweep dresser) is configured with a motion path selected to minimize interference with overhead suspension posts, polishing arms, and / or wafer carriers. For example, the dresser track, scan radius, and / or retraction position can be selected such that the dresser disk clears the range of motion of one or more wafer carriers during single-wafer polishing, dual-wafer polishing, loading, unloading, and / or maintenance operations.

[0151] include Figures 7 to 9 The aspects of this disclosure in the illustrated embodiments can reduce the overall footprint of a CMP system by providing an inverted column assembly, wherein the polishing arms are supported by columns fixed to a support structure located above the CMP system, such that the columns do not overlap with the plane occupied by the polishing plate. This frees up space that would otherwise be occupied by the columns, allowing the CMP system to occupy a smaller area, which can improve space efficiency by allowing a greater number of CMP systems to be arranged within the same size work area.

[0152] in conclusion

[0153] Many variations and modifications can be made to the above embodiments, and the elements therein should be understood as existing in other acceptable examples. All such modifications and variations are intended to be included within the scope of this disclosure. The foregoing description details certain embodiments. However, it should be understood that, however detailed the foregoing may appear in the text, the systems and methods can be practiced in many ways and implemented in other forms. As noted above, the use of specific terms in describing certain features or aspects of systems and methods should not be construed as implying that the term is redefined herein as limited to any particular characteristic of the system and method that includes the features or aspects of the system and method associated with that term.

[0154] Unless otherwise expressly stated or otherwise understood in the context in which they are used, conditional language, such as “can,” “may,” “may,” etc., is generally intended to express that certain embodiments include certain features, elements, and / or steps that are not included in other embodiments. Therefore, such conditional language is not generally intended to imply that features, elements, and / or steps are necessary in any way for one or more embodiments, or that one or more embodiments must include logic for determining whether such features, elements, and / or steps are included in or will be performed in any particular embodiment, with or without user input or prompting.

[0155] Unless otherwise specifically stated, connective language such as the phrases "at least one of X, Y, and Z" or "at least one of X, Y, or Z" should be understood, in context, as generally used to convey that an item, term, etc., may be X, Y, or Z, or a combination thereof. For example, the term "or" is used in its inclusive meaning (rather than its exclusive meaning) such that, when used, for example, to connect a list of elements, the term "or" indicates one, some, or all of the elements in the list. Therefore, such connective language is generally not intended to imply that some embodiments require at least one X, at least one Y, and at least one Z to each be present.

[0156] Furthermore, the terms first, second, third, etc., used in the specification and claims are used to distinguish similar elements and are not necessarily used to describe a sequence or chronological order. These terms are interchangeable where appropriate, and embodiments of this disclosure may differ from other sequences of operation described or shown herein.

[0157] Furthermore, the terms top, bottom, above, below, etc., used in the specification and claims are for descriptive purposes and not necessarily for describing relative positions. Such terms are interchangeable where appropriate, and the embodiments of this disclosure described herein may operate differently from other orientations described or shown herein.

[0158] The term “a” as used herein should be interpreted inclusively rather than exclusively. For example, unless otherwise specified, the term “a” should not be understood to mean “exactly one” or “one and only one”; rather, the term “a” means “one or more” or “at least one”, whether used in the claims or elsewhere in the specification, and regardless of whether quantifiers such as “at least one,” “one or more,” or “multiple” are used in the claims or elsewhere in the specification.

[0159] As used herein, the term "comprising" should be interpreted in an inclusive rather than exclusive sense. For example, a general-purpose computer that includes one or more processors should not be construed as excluding other computer components and may include components such as memory, input / output devices, and / or network interfaces.

[0160] While the detailed description above has shown, described, and pointed out novel features applicable to various embodiments, it will be understood that various omissions, substitutions, and changes may be made to the form and details of the illustrated apparatus or process without departing from the spirit of this disclosure. It will be appreciated that some embodiments of the disclosed technology described herein may be embodied in forms that do not provide all the features and benefits set forth herein, as some features may be used or practiced separately from others. The scope of certain aspects of the technology disclosed herein is indicated by the appended claims rather than the foregoing description. All variations within the meaning and scope of equivalents of the claims will be included within their scope.

Claims

1. A chemical mechanical planarization apparatus, comprising: column; A first substrate carrier head system and a second substrate carrier head system, each of the first and second substrate carrier head systems comprising: Polishing arm, which is connected to the column; and A wafer carrier, which is connected to a polishing arm and configured to hold a substrate; and A pressure plate configured to polish at least one of a first substrate held by a first substrate carrier head system and a second substrate held by a second substrate carrier head system. In this case, at least a portion of the column overlaps with the pressure plate.

2. The device according to claim 1, further comprising: A column support is arranged above the pressure plate, wherein the column support is configured to support the column, the first substrate carrier head system and the second substrate carrier head system.

3. The device according to claim 1, wherein, The pressure plate is configured to simultaneously polish the first substrate and the second substrate in different areas of the pressure plate.

4. The device according to claim 3, wherein, The column almost completely overlaps with the pressure plate.

5. The device according to claim 3, further comprising: A pad conditioner configured to sweep substantially the entire pressure plate while simultaneously polishing the first substrate and the second substrate.

6. The device according to claim 3, further comprising: A first arc-shaped sweep pad conditioner is configured to sweep a portion of the pressure plate upstream of the first substrate carrier head system during simultaneous polishing of the first substrate and the second substrate; as well as A second arc-shaped sweep pad conditioner is configured to sweep a portion of the pressure plate upstream of the second substrate carrier head system during simultaneous polishing of the first substrate and the second substrate.

7. The device according to claim 1, further comprising: Multiple transfer stations are configured to hold the substrate before and after polishing.

8. The device according to claim 7, further comprising: A central wafer handling robot configured to load the substrate into the transfer station and unload the substrate from the transfer station.

9. The device according to claim 7, further comprising: Multiple wafer handling robots configured to load the substrate into the transfer station and unload the substrate from the transfer station.

10. A chemical mechanical planarization apparatus, comprising: Column support components; The first and second columns are structurally supported by column support members; The first substrate carrier head system and the second substrate carrier head system are structurally supported by the first pillar; The third substrate carrier head system and the fourth substrate carrier head system are structurally supported by the second pillar; A first pressure plate is configured to polish at least one of a first substrate held by a first substrate carrier head system and a second substrate held by a second substrate carrier head system; as well as A second pressure plate is configured to polish at least one of a third substrate held by a third substrate carrier head system and a fourth substrate held by a fourth substrate carrier head system. The first column overlaps with at least a portion of the first pressure plate, and the second column overlaps with at least a portion of the second pressure plate.

11. The device according to claim 10, wherein, The first pressure plate is configured to simultaneously polish the first substrate and the second substrate in different areas of the first pressure plate, and the second pressure plate is configured to simultaneously polish the third substrate and the fourth substrate in different areas of the second pressure plate.

12. The device according to claim 10, further comprising: A third pressure plate is configured to polish the second substrate; as well as A fourth pressure plate, configured to polish the fourth substrate, Wherein, the first column overlaps with a portion of the first pressure plate and a portion of the third pressure plate, and the second column overlaps with a portion of the second pressure plate and a portion of the fourth pressure plate.

13. The device according to claim 10, wherein, The first substrate carrier head system includes: Polishing arm, which is connected to the first post; and A wafer carrier, which is connected to a polishing arm and configured to hold the first substrate.

14. The device according to claim 10, wherein, The column support is arranged above the pressure plate.

15. The device according to claim 10, wherein, The first column is located above the plane of the first pressure plate, and the second column is located above the plane of the second pressure plate.

16. The device according to claim 10, further comprising: Multiple transfer stations configured to hold the substrate before and after polishing the substrate; as well as A central wafer handling robot configured to load substrates into and unload substrates from a transfer station.

17. An inverted column assembly for a chemical mechanical planarization apparatus, comprising: Column support components; as well as The first and second pillars are structurally supported by pillar supports, and each of the first and second pillars is configured to support one or more substrate carrier head systems. The first and second columns are located above the plane of one or more pressure plates of the chemical mechanical planarization device.

18. The inverted column assembly according to claim 17, wherein, The column support is fixed to the top plate.

19. The inverted column assembly according to claim 17, wherein, The column support is fixed to a support structure located above the chemical mechanical planarization device.

20. The inverted column assembly according to claim 17, wherein, The first post overlaps with at least a portion of the first pressure plate of the one or more pressure plates, and the second post overlaps with at least a portion of the second pressure plate of the one or more pressure plates.

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