An auxiliary chemical mechanical polishing device

Abstract

The application provides an auxiliary chemical mechanical polishing device, which comprises a polishing disc, a polishing pad arranged on the polishing disc, and a polishing head for pressing a workpiece against the polishing pad for polishing; the device further comprises an acoustic field auxiliary assembly comprising a plurality of acoustic wave transducers; a plurality of installation cavities are arranged in the polishing disc, a plurality of groove structures are arranged on the top of the polishing disc, a plurality of through holes are arranged on the polishing pad, at least part of the through holes are communicated with at least part of the groove structures to form a liquid storage cavity, the installation cavities are located below the liquid storage cavity and close to the liquid storage cavity, and the acoustic wave transducers are arranged in the installation cavities. Since the acoustic wave transducers are integrated in the installation cavities in the polishing disc, and the installation cavities are arranged close to the liquid storage cavity, the acoustic wave energy can be conducted to the polishing liquid in the liquid storage cavity in the shortest path, the problem that the acoustic wave needs to be transmitted through multiple medium interfaces in the prior art is avoided, the energy loss is reduced, the acoustic field intensity acting on the polishing area is higher, and the acoustic field auxiliary polishing efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and in particular to an auxiliary chemical mechanical polishing apparatus. Background Technology

[0002] Chemical mechanical polishing (CMP) is a key technology for achieving global planarization of wafers. However, traditional CMP suffers from low material removal rates and low processing efficiency, making it difficult to meet the growing processing demands.

[0003] To improve polishing efficiency, existing technologies attempt to introduce acoustic assistance during the polishing process. Specifically, by placing acoustic transducers on the outside or side of the polishing disc or pad, the acoustic field is used to enhance the mechanical removal effect and promote the flow and renewal of the polishing slurry, thereby increasing the material removal rate.

[0004] However, in the aforementioned methods, the acoustic transducer is typically located outside or to the side of the polishing pad. The sound field needs to pass through multiple medium interfaces to reach the polishing area, resulting in significant energy loss during transmission. Consequently, the actual sound field energy acting on the polishing area is quite limited, leading to a less than ideal improvement in material removal rate. Furthermore, the low distribution and renewal efficiency of the polishing slurry on the polishing pad surface further restricts the effectiveness of sound-assisted polishing.

[0005] Therefore, how to improve the efficiency of sound field energy transfer to the polishing area, thereby further improving the material removal rate of sound field-assisted chemical mechanical polishing, is a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0006] This application provides an auxiliary chemical mechanical polishing device in which acoustic wave energy can be conducted to the polishing slurry in the reservoir cavity through the shortest path, which helps to improve the efficiency of acoustic field-assisted polishing.

[0007] The technical solution adopted in this application is as follows: An auxiliary chemical mechanical polishing apparatus, the apparatus comprising a polishing disc, a polishing pad disposed on the polishing disc, and a polishing head for pressing a workpiece against the polishing pad for polishing, characterized in that the apparatus further comprises: Acoustic field auxiliary components, including several acoustic transducers; The polishing disc has several mounting cavities inside, several groove structures are formed on the top of the polishing disc, and several through holes are formed on the polishing pad. At least some of the through holes communicate with at least some of the groove structures to form a liquid storage cavity. The mounting cavity is located below and close to the liquid storage cavity. The acoustic transducer is located in the mounting cavity.

[0008] Preferably, the sound field auxiliary component further includes a sound wave generator, which is disposed on the outside of the polishing disk and electrically connected to the sound wave transducer, for driving the sound wave transducer to generate a sound field with a preset frequency, preset power and preset vibration mode.

[0009] Preferably, the plurality of through holes are distributed in a ring array, spiral array, grid array, radial array or fan array on the polishing pad.

[0010] Preferably, the inner wall of the mounting cavity is provided with a connector, and the end face of the acoustic transducer is provided with a mating hole, through which the acoustic transducer is fixedly connected to the connector.

[0011] Preferably, an adhesive layer is provided between the acoustic transducer and the inner wall of the mounting cavity.

[0012] Preferably, the device further includes a light field auxiliary component, which includes at least one light source located above the polishing pad and the light emission direction of the light source is toward the polishing liquid on the polishing pad.

[0013] Preferably, the device further includes an electric field auxiliary component, which includes an anode component, a cathode component, and an adjustable power supply. The anode component is mounted on the polishing head and is in electrical contact with the workpiece. The cathode component is the polishing disc, a cathode ring embedded in the polishing disc, or a cathode plate disposed above the polishing pad and in contact with the polishing liquid. The positive and negative terminals of the adjustable power supply are respectively connected to the anode component and the cathode component.

[0014] Preferably, the device further includes a magnetic field auxiliary component, which includes at least one magnetic field generator. The magnetic field generator is located below the polishing disc or around the polishing pad, and the magnetic field range of the magnetic field generator covers the polishing area of ​​the polishing pad.

[0015] Preferably, the device further includes a thermal field auxiliary component, which includes at least one heat source disposed around the polishing area of ​​the polishing pad, the heating range of the heat source covering the workpiece and / or the polishing liquid on the polishing pad.

[0016] Preferably, the device further includes a plasma field auxiliary component, which includes at least one plasma generator located beside the polishing area of ​​the polishing pad, with the plasma generator's jet direction directed toward the polishing area of ​​the polishing pad.

[0017] According to the specific embodiments provided in this application, the following technical effects are disclosed: This application provides an auxiliary chemical mechanical polishing device, comprising a polishing disc, a polishing pad disposed on the polishing disc, and a polishing head for pressing a workpiece against the polishing pad for polishing. The device further includes a sound field auxiliary component comprising several acoustic transducers. The polishing disc has several mounting cavities inside, several groove structures on its top, and several through holes on the polishing pad. At least some of the through holes communicate with at least some of the groove structures to form a liquid storage cavity. The mounting cavities are located below and close to the liquid storage cavity. The acoustic transducers are disposed within the mounting cavities. Because the acoustic transducers are integrated into the mounting cavities inside the polishing disc, and the mounting cavities are adjacent to the liquid storage cavity, acoustic energy can be transmitted to the polishing fluid in the liquid storage cavity via the shortest path, avoiding the problem of acoustic waves needing to pass through multiple medium interfaces in the prior art. This reduces energy loss and increases the acoustic field intensity acting on the polishing area, thus improving the efficiency of sound field-assisted polishing. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is an overall schematic diagram of the auxiliary chemical mechanical polishing apparatus provided in the embodiments of this application; Figure 2 This is a schematic diagram of an acoustic transducer provided in an embodiment of this application disposed in an installation cavity; Figure 3 This is a schematic diagram of the through-hole distribution on the polishing pad provided in the embodiments of this application, wherein: (a) is a schematic diagram of the circular through-holes on the polishing pad provided in the embodiments of this application distributed in a concentric ring array, (b) is a schematic diagram of the circular through-holes on the polishing pad provided in the embodiments of this application distributed in a radially radial array, (c) is a schematic diagram of the square through-holes on the polishing pad provided in the embodiments of this application distributed in a grid array, and (d) is a schematic diagram of the diamond, square and circular through-holes on the polishing pad provided in the embodiments of this application distributed in a grid array; Figure 4 This is a schematic diagram of the connection of the electric field component provided in the embodiment of this application.

[0020] Figure label: 1. Polishing disc; 10. Mounting cavity; 11. Groove structure; 2. Polishing pad; 20. Through hole; 3. Workpiece; 4. Polishing head; 5. Acoustic transducer; 50. Power cord; 6. Light source; 7. Adjustable power supply; 8. Magnetic field generator; 9. Heat source; 12. Liquid supply assembly; 120. Polishing fluid; 13. Plasma generator. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] As described in the background section, acoustic transducers are typically positioned externally or to the side of the polishing pad. The sound field needs to pass through multiple media interfaces to reach the polishing area, resulting in significant energy loss during transmission. Consequently, the actual sound field energy acting on the polishing area is quite limited, leading to a less than ideal improvement in material removal rate. Furthermore, the low distribution and renewal efficiency of the polishing slurry on the polishing pad surface further restricts the effectiveness of sound-assisted polishing.

[0023] Based on this, this application provides an auxiliary chemical mechanical polishing device, which aims to solve the technical problem in the prior art where the acoustic transducer is located on the outside of the polishing disc, resulting in low acoustic energy transfer efficiency and poor auxiliary chemical mechanical polishing effect.

[0024] The embodiments of this application will be analyzed in detail below with reference to the accompanying drawings.

[0025] refer to Figure 1 and Figure 2 The auxiliary chemical mechanical polishing device includes a polishing disc 1, a polishing pad 2 disposed on the polishing disc 1, and a polishing head 4 for pressing the workpiece 3 against the polishing pad 2 for polishing.

[0026] The polishing disc 1 is driven to rotate by a spindle motor below it, and the polishing pad 2 rotates synchronously with the polishing disc 1. The polishing head 4 is rotatably mounted above the polishing disc 1, and the polishing head 4 can clamp and rotate the workpiece 3 while applying pressure to the workpiece 3 towards the polishing pad 2. Through the relative rotational motion of the polishing disc 1 and the polishing head 4, and the chemical action of the polishing fluid, the material on the surface of the workpiece 3 is removed. In this embodiment, the workpiece 3 can be a silicon carbide wafer, a sapphire wafer, or a single-crystal silicon wafer.

[0027] Continue to refer to Figure 1 and Figure 2The device also includes: a sound field auxiliary component, including a plurality of sound wave transducers 5; a plurality of mounting cavities 10 are opened inside the polishing disk 1, a plurality of groove structures 11 are opened on the top of the polishing disk 1, a plurality of through holes 20 are opened on the polishing pad 2, at least some of the through holes 20 communicate with at least some of the groove structures 11 to form a liquid storage cavity, the mounting cavity 10 is located below and close to the liquid storage cavity; the sound wave transducers 5 are disposed in the mounting cavity 10.

[0028] The mounting cavity 10 is a blind-hole-shaped cavity extending upward from the bottom of the polishing disk 1, used to accommodate the acoustic transducer 5 and provide it with a fixed space. The liquid storage cavity is formed by the through-hole 20 communicating with the groove structure 11, where polishing fluid can accumulate, forming a localized liquid environment. In some cases, the through-hole 20 communicates with the groove structure 11 to form the liquid storage cavity, and the polishing fluid accumulates in the liquid storage cavity; in other cases, the through-hole 20 is not aligned with the groove structure 11, and the bottom opening of the through-hole 20 is blocked by the top of the polishing disk 1, allowing the polishing fluid to accumulate in the through-hole 20. Compared to a blocked through-hole 20, the liquid storage cavity, formed by the through-hole 20 communicating with the groove structure 11, extends deeper inward, providing a larger accommodating space and a more stable liquid environment, which is beneficial for the accumulation and flow renewal of the polishing fluid, while also providing more favorable medium conditions for the propagation of the sound field. Therefore, by placing the mounting cavity 10 below and close to the liquid storage cavity, rather than below the blocked through hole 20, it is possible to ensure that the sound field generated by the acoustic transducer 5 is transmitted to the liquid storage cavity where the polishing liquid is more fully accumulated via the shortest path, thereby improving the efficiency of sound field energy transfer to the polishing area.

[0029] As an example, refer to Figure 2 The mounting cavity 10 is preferably located directly below the liquid storage cavity and maintains a preset distance from the liquid storage cavity. The sound field generated by the acoustic transducer 5 is transmitted to the polishing liquid in the liquid storage cavity through the polishing disk 1, generating cavitation effect and micro-stirring effect in the polishing area. On the one hand, it enhances the mechanical removal of the workpiece 3 surface by the abrasive particles, and on the other hand, it promotes the transport of reactants and the discharge of by-products, thereby improving the material removal rate.

[0030] Furthermore, the polishing slurry in the reservoir is distributed in the polishing area of ​​the polishing pad 2. After the acoustic energy is conducted to the polishing slurry in the reservoir through the polishing disk 1, it has an auxiliary effect on the surface of the workpiece 3 in the polishing area. The accumulation of polishing slurry in the reservoir is conducive to the uniform propagation of the sound field. At the same time, the polishing slurry can flow and renew itself between the through hole 20 and the groove structure 11, which is conducive to the transport and discharge of reactants and by-products. The aforementioned polishing area refers to the annular or circular area where the workpiece 3 is in direct contact with the polishing pad 2 and material removal occurs. This area is covered with polishing slurry 120 and is within the range of the sound field generated by the acoustic transducer 5.

[0031] refer to Figure 1 and Figure 2The device also includes a liquid supply assembly 12, which is positioned above the polishing pad 2 and is used to supply polishing liquid 120 to the surface of the polishing pad 2. The liquid supply assembly 12 can be positioned above or to the side of the central area of ​​the polishing pad 2; its specific position is not limited in this embodiment. After the polishing liquid 120 supplied by the liquid supply assembly 12 flows to the surface of the polishing pad 2, a portion of the polishing liquid 120 flows into the liquid storage cavity formed by the through hole 20 and the groove structure 11, and accumulates therein. The liquid storage cavity has a certain volume, which can maintain a certain amount of polishing liquid 120, forming a local liquid environment, thereby providing a stable medium for the propagation of the sound field. As the polishing process proceeds, the polishing liquid 120 continuously flows and renews itself between the through hole 20 and the groove structure 11, which is beneficial for the transport and discharge of reactants and byproducts.

[0032] Polishing slurry 120 covers the surface of polishing pad 2, and some of it accumulates in the reservoir. Since the polishing slurry 120 on the surface of polishing pad 2 and the polishing slurry 120 in the reservoir are connected through through-hole 20, they belong to the same continuous liquid. The sound field generated by the acoustic transducer 5 is conducted through the polishing disk 1 to the polishing slurry 120 accumulated in the reservoir, and then further transmitted in the liquid, passing through through-hole 20 to the polishing slurry 120 on the surface of polishing pad 2, ultimately producing an auxiliary polishing effect on the surface of workpiece 3 in the polishing area. Therefore, the polishing slurry 120 in the reservoir also serves as an intermediate medium for sound field transmission, efficiently transferring sound energy to the polishing slurry 120 on the surface of polishing pad 2, allowing the sound field energy to act directly on the polishing area along the shortest path.

[0033] In a preferred embodiment, the sound field auxiliary component also includes a sound wave generator, which is located on the outside of the polishing disk 1 and electrically connected to the sound wave transducer 5, for driving the sound wave transducer 5 to generate a sound field with a preset frequency, preset power and preset vibration mode.

[0034] The acoustic generator can be fixed on the frame outside the polishing disc 1, and its output end is electrically connected to the acoustic transducer 5 through the power cable 50 passing through the inside of the spindle. The acoustic generator can output drive signals with corresponding frequency and power according to different workpiece materials or polishing stages, and can adjust the vibration mode to longitudinal vibration, torsional vibration or composite vibration to drive the acoustic transducer 5 to generate a sound field with corresponding parameters, thereby adapting to different polishing process requirements.

[0035] As a preferred embodiment, refer to Figure 3 Multiple through holes 20 are distributed on the polishing pad 2 in a ring array, spiral array, grid array, radial array or fan array.

[0036] As an example, refer to Figure 3 (a) The polishing pad 2 has circular through holes 20, and multiple through holes 20 are distributed in a concentric ring array; Reference Figure 3 (b) The polishing pad 2 has circular through holes 20, and multiple through holes 20 are arranged in a radially radial array; Reference Figure 3 (c) The polishing pad 2 has square through holes 20, and the multiple through holes 20 are distributed in a grid array; Reference Figure 3 (d) The polishing pad 2 has through holes 20 in the shapes of rhombuses, squares, and circles, and the through holes 20 are distributed in a grid array. The array distribution of the through holes 20 is conducive to the uniform distribution and flow of polishing fluid on the surface of the polishing pad 2, and at the same time provides a more uniform liquid environment for the propagation of the sound field.

[0037] In a preferred embodiment, the inner wall of the mounting cavity 10 is provided with a connector, and the end face of the acoustic transducer 5 is provided with a mating hole. The acoustic transducer 5 is fixedly connected to the connector through the mating hole.

[0038] As an example, the connector can be a screw or bolt welded to the inner wall of the mounting cavity 10, and the mating hole is a threaded hole. The acoustic transducer 5 is fixed in the mounting cavity 10 by the threaded connection. The threaded connection structure is simple and facilitates the disassembly, assembly, and maintenance of the acoustic transducer 5.

[0039] In a preferred embodiment, an adhesive layer is provided between the acoustic transducer 5 and the inner wall of the mounting cavity 10.

[0040] The adhesive layer can be applied between the outer peripheral wall of the acoustic transducer 5 and the inner wall of the mounting cavity 10. The adhesive method can be applied in at least two situations: First, as an independent fixing method, the acoustic transducer 5 is fixed to the inner wall of the mounting cavity 10 solely by the adhesive layer, without the need for the aforementioned connectors and mating holes, suitable for high-frequency transducers or mounting cavities where welding is inconvenient; Second, as an auxiliary reinforcement method for threaded connections, the acoustic transducer 5 is first initially fixed through the threaded connection of the connectors and mating holes, and then reinforced by the adhesive layer to prevent the acoustic transducer 5 from loosening under long-term vibration conditions and improve the durability of the fixation.

[0041] As a preferred embodiment, refer to Figure 1 The device also includes a light field auxiliary component, which includes at least one light source 6 located above the polishing pad 2, with the light emission direction of the light source 6 directed toward the polishing liquid on the polishing pad 2.

[0042] With the assistance of a light field, photocatalysts in the polishing slurry, such as TiO2 nanoparticles, can be excited to generate highly oxidizing active species, accelerating the oxidation of the workpiece surface and improving material removal efficiency. Photocatalytic oxidation is a mild chemical process that helps reduce surface damage.

[0043] As an example, the light source 6 can be an ultraviolet LED lamp assembly, which is positioned towards the polishing slurry on the polishing pad 2, emitting ultraviolet light with a wavelength of 365nm. TiO2 nanoparticles are added to the polishing slurry 120. When the workpiece 3 is a silicon carbide wafer, the ultraviolet light is turned on to irradiate the polishing area. The TiO2 is excited to generate hydroxyl radicals, which oxidize the SiC surface into a softer SiO2 layer, facilitating subsequent mechanical removal.

[0044] As a preferred embodiment, refer to Figure 4 The device also includes an electric field auxiliary component, which includes an anode component, a cathode component, and an adjustable power supply 7. The anode component is installed on the polishing head 4 and is in electrical contact with the workpiece 3. The cathode component is a polishing disc 1, a cathode ring embedded in the polishing disc 1, or a cathode plate located above the polishing pad 2 and in contact with the polishing liquid. The positive and negative terminals of the adjustable power supply 7 are respectively connected to the anode component and the cathode component.

[0045] In this process, workpiece 3, sharing the same electrical potential as the anode component, undergoes an electrochemical reaction under the influence of an electric field, generating a soft oxide layer or passivation film on its surface. This oxide layer has a lower hardness than the substrate material and can be easily removed by mechanical polishing, thereby improving material removal rate and reducing processing damage. The adjustable power supply 7 can provide DC or pulse signals to adapt to the electrochemical characteristics of different materials.

[0046] It should be noted that, since the polishing head 4 needs to rotate during operation, the electrical connection between the adjustable power supply 7 and the polishing head 4 is achieved through an electric slip ring to avoid wire entanglement. Specifically, the electric slip ring is located at the rotating connection of the polishing head 4, with its stator connected to the external power supply line and its rotor rotating together with the polishing head 4, thus maintaining stable electrical contact during rotation. Similarly, if the cathode component is a polishing disc 1 made of conductive material, its electrical connection with the adjustable power supply 7 can also be achieved through an electric slip ring or an electric brush. Furthermore, among the three forms of the cathode component, one is a polishing disc 1 made of conductive material, which has a simple structure; the second is a cathode ring embedded in the polishing disc 1, which rotates with the polishing disc 1 in a concentric ring shape and is suitable for situations where the polishing disc 1 is non-conductive; the third is a cathode plate independently set above the polishing pad 2 and in contact with the polishing liquid 120, which is fixed and easy to isolate from other auxiliary components. Operators can choose any one of these according to actual needs.

[0047] As an example, workpiece 3 is a silicon carbide wafer, polishing liquid 120 is a water-based polishing liquid containing an appropriate amount of potassium chloride electrolyte, and adjustable power supply 7 is an electrochemical workstation that can apply a DC voltage of 50V. The surface of workpiece 3 undergoes anodic oxidation to generate a soft SiO2 layer, which is then removed by mechanical polishing.

[0048] As a preferred embodiment, refer to Figure 1The device also includes a magnetic field auxiliary component, which includes at least one magnetic field generator 8. The magnetic field generator 8 is located below the polishing disk 1 or around the polishing pad 2. The magnetic field of the magnetic field generator 8 covers the polishing area of ​​the polishing pad 2.

[0049] The magnetic field generated by the magnetic field generator 8 couples with the magnetic abrasive particles or magnetically sensitive medium in the polishing fluid 120, which can enhance the mechanical action of the abrasive particles on the workpiece surface. The alternating magnetic field can also generate a magnetohydrodynamic effect, improve the hydrodynamic characteristics of the polishing area, make the abrasive particle distribution more uniform, and thus improve the polishing uniformity.

[0050] As an example, the magnetic field generator 8 uses an electromagnet and is positioned below the polishing disc 1. Magnetic abrasive particles, such as diamond particles coated with carbonyl iron powder, are added to the polishing slurry. After the magnetic field is activated, the magnetic abrasive particles are attracted to the surface of the workpiece 3 under the action of the magnetic field force, increasing the effective abrasive particle concentration and cutting edge, and improving the material removal rate.

[0051] As a preferred embodiment, refer to Figure 1 The device also includes a thermal field auxiliary component, which includes at least one heat source 9 disposed around the polishing area of ​​the polishing pad 2, and the heating range of the heat source 9 covers the workpiece 3 and / or the polishing liquid on the polishing pad 2.

[0052] Heating the workpiece surface through a thermal field softens the material, reducing its hardness and brittleness, thereby decreasing the cutting force required for mechanical polishing and increasing the rate of chemical reactions. The thermal field can also combine with the aforementioned optical and electric fields to create a synergistic thermo-optical-electric effect, further optimizing the polishing result.

[0053] As an example, heat source 9 uses infrared lamps arranged around the polishing area of ​​polishing pad 2. When the workpiece 3 is a sapphire wafer, heating the polishing area to a preset temperature significantly reduces the surface hardness of the sapphire. Combined with other auxiliary components, this can greatly improve removal efficiency and reduce subsurface damage.

[0054] As a preferred embodiment, refer to Figure 1 The device also includes a plasma field auxiliary component, which includes at least one plasma generator 13. The plasma generator 13 is located beside the polishing area of ​​the polishing pad 2, and the jetting direction of the plasma generator 13 is toward the polishing area of ​​the polishing pad 2.

[0055] The plasma generator 13 produces low-temperature plasma, which acts on the surface of the workpiece 3, altering its surface chemical state and thus enhancing the chemical reactivity during subsequent chemical mechanical polishing. Plasma treatment is a dry modification method that does not introduce additional liquid contamination.

[0056] As an example, plasma generator 13 employs a dielectric barrier discharge electrode, and the working gas is oxygen or a mixture of argon and oxygen. When the workpiece 3 is a single-crystal silicon wafer, the plasma is activated before or during polishing to oxidize and activate the surface, making it easier for the oxidant in the subsequent polishing slurry to react with the silicon surface and improving the removal rate.

[0057] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0058] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0059] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. An auxiliary chemical mechanical polishing apparatus, the apparatus comprising a polishing disc (1), a polishing pad (2) disposed on the polishing disc (1), and a polishing head (4) for pressing a workpiece (3) against the polishing pad (2) for polishing, characterized in that, The device further includes: The acoustic field auxiliary components include several acoustic transducers (5). The polishing disc (1) has several mounting cavities (10) inside, and several groove structures (11) are provided on the top of the polishing disc (1). The polishing pad (2) has several through holes (20). At least some of the through holes (20) are connected to at least some of the groove structures (11) to form a liquid storage cavity. The mounting cavity (10) is located below and close to the liquid storage cavity. The acoustic transducer (5) is located in the mounting cavity (10).

2. The auxiliary chemical mechanical polishing apparatus according to claim 1, characterized in that, The sound field auxiliary component also includes a sound wave generator, which is located on the outside of the polishing disk (1) and electrically connected to the sound wave transducer (5) to drive the sound wave transducer (5) to generate a sound field with a preset frequency, preset power and preset vibration mode.

3. The auxiliary chemical mechanical polishing apparatus according to claim 1, characterized in that, The multiple through holes (20) are distributed in a ring array, spiral array, grid array, radial array or fan array on the polishing pad (2).

4. The auxiliary chemical mechanical polishing apparatus according to claim 1, characterized in that, The inner wall of the mounting cavity (10) is provided with a connector, and the end face of the acoustic transducer (5) is provided with a mating hole. The acoustic transducer (5) is fixedly connected to the connector through the mating hole.

5. The auxiliary chemical mechanical polishing apparatus according to claim 4, characterized in that, An adhesive layer is provided between the acoustic transducer (5) and the inner wall of the mounting cavity (10).

6. The auxiliary chemical mechanical polishing apparatus according to any one of claims 1 to 5, characterized in that, The device further includes a light field auxiliary component, which includes at least one light source (6) located above the polishing pad (2) and the light emission direction of the light source (6) is toward the polishing liquid on the polishing pad (2).

7. The auxiliary chemical mechanical polishing apparatus according to any one of claims 1 to 5, characterized in that, The device also includes an electric field auxiliary component, which includes an anode component, a cathode component and an adjustable power supply (7). The anode component is installed on the polishing head (4) and is in electrical contact with the workpiece (3). The cathode component is the polishing disc (1), a cathode ring embedded in the polishing disc (1), or a cathode plate located above the polishing pad (2) and in contact with the polishing liquid. The positive and negative terminals of the adjustable power supply (7) are respectively connected to the anode component and the cathode component.

8. The auxiliary chemical mechanical polishing apparatus according to any one of claims 1 to 5, characterized in that, The device also includes a magnetic field auxiliary component, which includes at least one magnetic field generator (8). The magnetic field generator (8) is located below the polishing disc (1) or around the polishing pad (2). The magnetic field of the magnetic field generator (8) covers the polishing area of ​​the polishing pad (2).

9. The auxiliary chemical mechanical polishing apparatus according to any one of claims 1 to 5, characterized in that, The device further includes a thermal field auxiliary component, which includes at least one heat source (9) disposed around the polishing area of ​​the polishing pad (2), and the heating range of the heat source (9) covers the workpiece (3) and / or the polishing liquid on the polishing pad (2).

10. The auxiliary chemical mechanical polishing apparatus according to any one of claims 1 to 5, characterized in that, The device also includes a plasma field auxiliary component, which includes at least one plasma generator (13). The plasma generator (13) is located on the side of the polishing area of ​​the polishing pad (2), and the jetting direction of the plasma generator (13) is toward the polishing area of ​​the polishing pad (2).

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