Slicing machine, slicing method and silicon wafer

Abstract

The application discloses a slicing machine, a slicing method and a silicon wafer. The slicing machine integrates a plating device on a rack of the slicing machine, which can reduce the overall floor area of a cutting line production device and the slicing machine, and reduce equipment investment and land cost. Meanwhile, the manufacturing process of the cutting line and the slicing process of the silicon wafer can be well connected, the completed cutting line can be directly moved to a cutting station for cutting, the overall production process of the silicon wafer is simplified, and the production efficiency of the silicon wafer is improved. Moreover, the two ends of the cutting line are kept connected with a pay-off wheel and a take-up wheel, the cutting line is moved through rotation of the take-up wheel, repeated pay-off and take-up of the cutting line are not needed, the risk of deformation of the cutting line is reduced, the cutting line keeps good cutting performance and cutting precision, and the slicing loss of the silicon wafer is reduced.

Description

Technical Field

[0001] This application relates to the field of wafer manufacturing technology, and in particular to a slicing machine, slicing method and silicon wafer. Background Technology

[0002] Wafers are one of the core components of new energy batteries, and their quality has a significant impact on the reliability of these batteries. Currently, in the production stage, crystal rods are mainly cut into multiple wafers using dicing wires on a slicing machine. Typically, dicing wires need to be manufactured using specific equipment, then transported to the slicing machine and installed. During the transportation of the dicing wires, the abrasive layer on the surface may wear off or detach. Furthermore, the parameters of the finished dicing wires are fixed and cannot be adjusted according to actual needs, resulting in poor coordination between different process stages in wafer production and reduced production efficiency. Summary of the Invention

[0003] The purpose of this application is to provide a slicing machine, slicing method, and silicon wafer that can simplify the wafer manufacturing process, better connect different process steps, and improve wafer production efficiency.

[0004] To solve the above-mentioned technical problems, the first aspect of this application provides a slicer, comprising: frame; A drive device is provided on the frame, the drive device is used to fix the workpiece to be cut and drive the workpiece to be cut to reciprocate along a first direction; A cutting device includes a cutting wire and a plurality of rotating rollers. The plurality of rotating rollers are rotatably mounted on the frame and are spaced apart from the driving device along the first direction. The cutting wire surrounds the outer periphery of the plurality of rotating rollers, and the plurality of rotating rollers are used to drive the cutting wire to reciprocate to cut the object to be cut. A wire feeding reel is disposed on the frame and is spaced apart from a plurality of rotating rollers along a second direction. One end of the cutting wire is connected to the wire feeding reel, and the wire feeding reel is used to release the cutting wire. A take-up reel is provided on the frame and along the second direction on the side of the plurality of rotating rollers away from the feed reel. The other end of the cutting wire is connected to the take-up reel, and the take-up reel is used to wind the cutting wire. A plating apparatus is disposed along the second direction between the wire feeding reel and the plurality of rotating rollers, a portion of the cutting wire passes through the plating apparatus, and the plating apparatus is used to plating an abrasive layer onto the surface of the cutting wire; The second direction is the direction that intersects with the first direction.

[0005] The slicing machine of this application integrates a plating device onto a frame, spaced apart from a cutting device. Both the plating and cutting devices are positioned between a feed reel and a take-up reel. One end of the cutting wire in the cutting device is connected to the feed reel, and the other end is connected to the take-up reel. When the take-up reel rotates, it winds the cutting wire, thereby updating the cutting wire on the plating device and at the cutting position, and moving the cutting wire that was originally plating on the plating device to the cutting position for cutting. As can be seen, the slicing machine of this application, by integrating the plating device onto the frame, reduces the overall footprint of the cutting wire production equipment and the slicing machine, lowering equipment investment and land costs. Simultaneously, it allows for a seamless integration of the cutting wire manufacturing process and the silicon wafer cutting process; the plating-completed cutting wire can be directly moved to the cutting station for cutting, simplifying the overall silicon wafer production process and thus improving silicon wafer production efficiency. Furthermore, the two ends of the cutting wire remain connected to the feed reel and take-up reel. The cutting wire is moved by the rotation of the take-up reel, eliminating the need for repeated feeds and take-ups. This reduces the risk of cutting wire deformation, ensuring good cutting performance and precision, and minimizing silicon wafer cutting losses.

[0006] In some embodiments, the plating apparatus includes a plating chamber, an abrasive application assembly, and an electroplating assembly. The abrasive application assembly and the electroplating assembly are sequentially disposed in the plating chamber along the second direction. The cutting line passes through the plating chamber. The abrasive application assembly is used to attach abrasive to the surface of the cutting line, and the electroplating assembly is used to plate an electroplated layer on the surface of the cutting line.

[0007] In some embodiments, the abrasive assembly includes an abrasive nozzle and a stirring tank disposed in the plating chamber. The abrasive nozzle and the stirring tank are arranged at intervals along the first direction. The abrasive nozzle is used to spray abrasive into the stirring tank, and the stirring tank is used to load electroplating solution. The portion of the cutting line corresponding to the stirring tank is immersed in the electroplating solution. And / or, the electroplating assembly includes a first polar roller and a second polar electroplating element disposed within the plating cavity, the first polar roller being rotatably connected to the plating cavity, the cutting line overlapping the surface of the first polar roller, the second polar electroplating element and the first polar roller being disposed on opposite sides of the cutting line, and the first polar roller being used to drive the cutting line to move along the second direction.

[0008] In some embodiments, the plating apparatus further includes a cleaning component disposed along the second direction on the side of the electroplating component away from the sanding component, the cleaning component being used to clean the cut line after electroplating.

[0009] In some embodiments, the cleaning assembly includes a cleaning nozzle for spraying fluid onto the cutting line to clean the cutting line; And / or, the cleaning component includes a dryer for drying the cutting line.

[0010] In some embodiments, the plating apparatus further includes a detection component disposed along the second direction on the side of the electroplating component away from the sanding component, the detection component being used to detect real-time parameters of the cutting line surface.

[0011] In some embodiments, the detection component includes a thickness sensor and an adhesion detector, wherein the thickness sensor is used to detect the thickness parameter of the electroplated layer, and the adhesion detector is used to detect at least the adhesion parameter of the abrasive layer.

[0012] In some embodiments, the slicing machine further includes a control device electrically connected to the sanding assembly, the electroplating assembly, and the detection assembly. The control device is used to receive the real-time parameters and compare them with target parameters. When the real-time parameters deviate from the target parameters, the control device adjusts the operating parameters of the sanding assembly and the electroplating assembly.

[0013] In some embodiments, the control device is used to adjust the operating parameters of the sand-applying component and the electroplating component when the difference between the real-time parameter and the target parameter exceeds a preset threshold.

[0014] In some embodiments, the control device includes a parameter preset module, which is electrically connected to the sand-applying component, the electroplating component, and the detection component. The parameter preset module stores the target parameters and is used to receive the real-time parameters.

[0015] In some embodiments, the control device further includes an adjustment module electrically connected to the parameter preset module, the sanding component, and the electroplating component, and the adjustment module is used to adjust the operating parameters of the sanding component and the electroplating component according to the instructions of the control module.

[0016] In some embodiments, the slicing machine further includes a tension adjustment device disposed on the frame and located between the wire feeding reel and the plating device, the tension adjustment device being used to keep the tension of the cutting wire within a preset range.

[0017] In some embodiments, the tension adjustment device includes a floating roller and a force sensor. The floating roller is movably disposed on the frame and located between the wire feeding reel and the plating device. The force sensor is electrically connected to the floating roller. The cutting wire is wound around the outer periphery of the floating roller. The force sensor is used to detect the tension of the cutting wire. The floating roller is used to receive the detection data from the force sensor and adjust the tension of the cutting wire according to the detection data.

[0018] A second aspect of this application provides a slicing method, comprising: Predict the cutting wear of the cutting line, and set the target parameters for plating the cutting line based on the cutting wear. The coating device is controlled to coat an abrasive layer onto the surface of the cutting line according to the target parameters; The take-up reel is controlled to wind the cutting wire so that the cutting wire is wound around the outer periphery of the rotating roller; The rotating roller is controlled to reciprocate so that the cutting line reciprocates. The drive device is controlled to move the crystal rod toward the cutting line so that the cutting line cuts the crystal rod.

[0019] A third aspect of this application provides a silicon wafer manufactured by the slicing method described in the second aspect.

[0020] The slicer of this application has at least the following advantages over the prior art: The slicing machine provided in this application, by integrating the plating device onto the slicing machine frame, reduces the overall footprint of the wire cutting production equipment and the slicing machine, thereby lowering equipment investment and land costs. Simultaneously, it allows for seamless integration of the wire cutting process and the silicon wafer cutting process. The plated wire can be directly moved to the cutting station for cutting, simplifying the overall silicon wafer production process and improving production efficiency. Furthermore, with both ends of the wire connected to the feed and take-up reels, the wire is moved by the rotation of the take-up reel, eliminating the need for repeated feed and take-up, reducing the risk of wire deformation, maintaining good cutting performance and precision, and minimizing silicon wafer cutting losses. Attached Figure Description

[0021] One or more embodiments are illustrated by way of example with reference numerals in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.

[0022] Figure 1 This is a schematic diagram of the slicer according to an embodiment of this application; Figure 2 This is a schematic diagram of the cutting device according to an embodiment of this application; Figure 3 This is a schematic diagram of the plating apparatus according to an embodiment of this application; Figure 4 This is a schematic diagram showing the connection between each module of the plating device and each module of the control device in the embodiments of this application; Figure 5 This is a slicing method according to an embodiment of this application; Figure 6 This is another slicing method according to an embodiment of this application.

[0023] Explanation of reference numerals in the attached figures 1. Slicer; 11. Frame; 12. Drive unit; 13. Cutting unit; 131. Cutting wire; 132. Rotating roller; 14. Feeding reel; 15. Taking-up reel; 16. Plating unit; 161. Plating chamber; 162. Sanding assembly; 1621. Sanding nozzle; 1622. Mixing tank; 1623. Abrasive storage bin; 163. Electroplating assembly; 1631. First polarity roller; 1632. Second polarity electroplated part; 164. Cleaning assembly; 1641. Cleaning nozzle; 1642. Dryer; 165. Detection assembly; 17. Control unit; 171. Parameter preset module; 172. Adjustment module; 173. Alarm module; 18. Tension adjustment device; 181. Floating roller; D1, first direction; D2, second direction; D3, third direction. Detailed Implementation

[0024] Silicon wafers in new energy batteries are primarily formed by cutting silicon rods using a slicing machine. Slicing machines typically use diamond wire for cutting, where the diamond wire reciprocates relative to the silicon rod to create friction and achieve the cut. During the cutting process, the diamond abrasive on the surface of the diamond wire wears down and may even detach, significantly reducing the cutting efficiency and affecting the surface properties of the silicon wafer. Furthermore, current diamond wire manufacturing lines and slicing machines are separate, resulting in poor coordination between production stages. When the specifications of the diamond wire need to be changed according to production requirements, the slicing machine often needs to be stopped, diamond wire transported from the production line, and the machine restarted after replacement, leading to reduced production efficiency. In addition, during diamond wire manufacturing, a metal busbar needs to be tensioned to facilitate the coating of abrasive materials such as diamond abrasive on its surface, and then the wire is released after manufacturing. When installing the diamond wire onto the slicing machine, it needs to be tensioned again; this repeated tensioning and releasing can deform the metal busbar, reducing the cutting precision of the diamond wire against the silicon rod and increasing silicon wafer wear.

[0025] This disclosure provides a slicing machine that integrates a plating device onto the slicing machine's frame, reducing the overall footprint of the wire cutting production equipment and the slicing machine, thus lowering equipment investment and land costs. Simultaneously, it allows for seamless integration of the wire cutting process and the silicon wafer cutting process. The plated wire can be directly moved to the cutting station for cutting, simplifying the overall silicon wafer production process and improving production efficiency. Furthermore, since both ends of the wire are connected to the feed reel and take-up reel, the wire is moved by the rotation of the take-up reel, eliminating the need for repeated feeds and take-ups, reducing the risk of wire deformation, maintaining good cutting performance and precision, and minimizing silicon wafer cutting losses.

[0026] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the various embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0027] In the description of the embodiments of this disclosure, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary or secondary relationship of the indicated technical features. In the description of the embodiments of this disclosure, "multiple" means two or more, unless otherwise explicitly defined. Similarly, "multiple sets" refers to two or more sets (including two sets), and "multiple pieces" refers to two or more pieces (including two pieces).

[0028] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this disclosure. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0029] In the description of the embodiments of this disclosure, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0030] In the description of embodiments of this disclosure, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and "vertical," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing embodiments of this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on embodiments of this disclosure. For example, if the device or element in the illustration is inverted, then the element described as "below," "under," "below," or "bottom" of other elements or features will be oriented "above" or "top" of said other elements or features. Therefore, the term "below" may cover both above and below orientations depending on the context in which the term is used, as will be apparent to those skilled in the art. Materials may be oriented in other ways (e.g., rotated 90 degrees, inverted, flipped), and the spatial relative descriptive terms used herein may be interpreted accordingly.

[0031] It should be noted that in the description of the embodiments of this disclosure, "parallel" should not be narrowly interpreted as an angle of 0° between two parts, but should be understood as a reasonable range including 0° with a certain degree of fluctuation, such as -5° to 5°, provided that the technical effect is achieved. Similarly, "perpendicular" should not be interpreted as an angle of 90° between two parts, but should be an angle range including 90° with a certain degree of fluctuation, such as 85° to 95° including 90°; or any angle within a range of no more than 5% with 90° as the reference.

[0032] In the description of the embodiments of this disclosure, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.

[0033] In the description of embodiments of this disclosure, the terms "about," "approximately," "roughly," or "about" for a numerical value referring to a specific parameter include the numerical value, and those skilled in the art will understand that the deviation from the numerical value is within acceptable tolerances of the specific parameter. For example, "about" or "about" for a numerical value may include additional values ​​that are in the range of 90.0% to 110.0% of the numerical value, such as in the range of 95.0% to 105.0%, 97.5% to 102.5%, 99.0% to 101.0%, 99.5% to 100.5%, or 99.9% to 100.1%.

[0034] In the accompanying drawings corresponding to the embodiments of this disclosure, the thickness and / or area of ​​layers, films, panels, regions, etc., are enlarged for better understanding and ease of description. Throughout the specification, the same reference numerals denote the same elements. Furthermore, when describing a component as being "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor on a portion of the edge of the entire surface.

[0035] In the description of embodiments of this disclosure, when a component "includes" another component, other components are not excluded unless otherwise stated, and may be further included. When a component (such as a layer, film, region, or substrate) is described as being on or on the surface of another component, the component may be "directly" located on the surface of the other component, or there may be an intermediate component between the two components. Conversely, when a component is described as being on the surface of another component, or a component is "directly" on another component, or another component is formed or disposed on the surface of a component, it indicates that there is no intermediate component between the two components. For simplicity and clarity, various components may be drawn at any scale. In the drawings, some components may be omitted for simplicity.

[0036] The “components” mentioned above can refer to layers, films, regions, parts, structures, etc.

[0037] The terminology used in the description of the various embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used in the description of the various embodiments and the appended claims, the term "component" is also intended to include the plural form unless the context clearly indicates otherwise. Components include layers, films, regions, or plates, etc.

[0038] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0039] Please see also Figures 1 to 4 , Figure 1 This is a schematic diagram of the slicer according to an embodiment of this application. Figure 2 This is a schematic diagram of the cutting device according to an embodiment of this application. Figure 3 This is a schematic diagram of the plating apparatus according to an embodiment of this application. Figure 4 This is a schematic diagram showing the connection between each module of the plating device and each module of the control device in the embodiments of this application.

[0040] The slicer 1 provided in the first aspect of this embodiment includes a frame 11, a drive unit 12, and a cutting unit 13. The frame 11 serves as the main frame of the slicer 1, primarily providing a platform and support for carrying and installing the other devices. The frame 11 can be a steel frame, ensuring sufficient mechanical strength and stability. The drive unit 12 is movably mounted on the frame 11, primarily carrying the object to be cut 2 and driving it to move along a first direction D1. The cutting unit 13 includes a cutting wire 131 and multiple rotating rollers 132. The multiple rotating rollers 132 are rotatably mounted on the frame 11 and spaced apart from the drive unit 12 along the first direction D1. The cutting wire 131 surrounds the outer periphery of the multiple rotating rollers 132, and the multiple rotating rollers 132 drive the cutting wire 131 to reciprocate to cut the object to be cut. It is understood that when the drive unit 12 drives the object to be cut to the cutting unit 13, the multiple rotating rollers 132 reciprocate, causing the cutting wire 131 to reciprocate and cut the object. In some embodiments, the object to be cut is a silicon rod, which can be cut by cutting line 131 to form a silicon wafer.

[0041] In this embodiment, the first direction D1 can be the height direction of the slicing machine 1, that is, the driving device 12 can drive the silicon rod to move downward along the height direction to the cutting device 13, and when the silicon rod is cut to form multiple silicon wafers, the multiple silicon wafers move upward in the height direction away from the cutting device 13.

[0042] In this embodiment, there are no special limitations on the specific type, specifications, or composition of the driving device 12, as long as it can fix the silicon rod and drive the silicon rod to reciprocate in the height direction.

[0043] In some embodiments, the drive device 12 and the silicon rod can be fixed together by adhesive bonding. In other embodiments, the drive device 12 and the silicon rod can also be fixed together by clamping or other methods. The following description uses the method of fixing the silicon rod to the drive device 12 by adhesive bonding as an example, but it is not intended to imply that the following content is only applicable to this example.

[0044] In some embodiments, the axial direction of the rotating roller 132 is a second direction D2, the plurality of rotating rollers 132 are parallel to each other, and at least two rotating rollers 132 are spaced apart on a third direction D3. In this way, the driving device 12 can drive the silicon rod to move between the two rotating rollers 132 spaced apart on the third direction D3, so that the cutting line 131 located between the two rotating rollers 132 cuts the silicon rod.

[0045] As is understandable, the second direction D2 intersects with the first direction D1, and the third direction D3 is located in the direction where the first direction D1 and the second direction D3 intersect. That is, the angle formed by the first direction D1 and the second direction D2 can be acute, right, or obtuse, and the angle formed by the first direction D1, the second direction D2, and the third direction D3 can also be acute, right, or obtuse. The following explanation uses the example of the first direction D1, the second direction D2, and the third direction D3 forming right angles with each other (i.e., mutually perpendicular), but it is not stated that the following content only applies to this example.

[0046] It should be noted that when the first direction D1, the second direction D2, and the third direction D3 are all perpendicular to each other, the second direction D2 and the third direction D3 are both horizontal directions.

[0047] In this embodiment, the cutting line 131 can spirally wrap around the surface of multiple rotating rollers 132 in a clockwise or counterclockwise direction. The reciprocating rotation of the rotating rollers 132 causes the cutting line 131 to reciprocate, thereby achieving cutting.

[0048] In this embodiment, the slicing machine 1 further includes a feed reel 14 and a take-up reel 15, both of which are rotatably mounted on the frame 11. Furthermore, in the second direction D2, the feed reel 14 and take-up reel 15 are respectively located on opposite sides of a plurality of rotating rollers 132, and the two ends of the cutting wire 131 are respectively connected to the feed reel 14 and the take-up reel 15. The feed reel 14 stores the cutting wire 131. When the take-up reel 15 rotates and takes up the cutting wire 131, the feed reel 14 is driven to rotate and simultaneously releases the cutting wire 131. Thus, when the cutting performance of the portion of the cutting wire 131 originally used for cutting silicon rods decreases due to wear or other reasons, the rotation of the take-up reel 15 can be controlled to cause the portion with decreased cutting performance to be taken up by the take-up reel 15. Simultaneously, the uncut and unworn portion of the cutting wire 131 moves to the rotating rollers 132 to replace the portion wound by the take-up reel 15 for cutting. The above settings allow for rapid replacement of some cutting lines 131 when their performance degrades, ensuring the cutting effect of silicon wafers while reducing the time required to replace cutting lines 131 and improving production efficiency.

[0049] Understandably, the rotation axes of both the pay-off reel 14 and the take-up reel 15 can be set to intersect with the second direction D2, so that the extension direction of the cutting wire 131 is approximately parallel to the second direction D2. This reduces the component force on the cutting wire 131 in other directions, ensuring that the cutting wire 131 has high positional stability. When the take-up reel 15 rotates, the cutting wire 131 moves in a direction approximately parallel to the second direction D2. Preferably, the rotation axes of both the pay-off reel 14 and the take-up reel 15 can be set to be perpendicular to the second direction. In this way, the cutting wire 131 is tensioned along the second direction D2, and during the movement of the cutting wire 131, there is no component force on the cutting wire 131 in the third direction D3, or the component force is small, thus maintaining stability.

[0050] In some embodiments, both the pay-off reel 14 and the take-up reel 15 are spools, which can be fixed to a rotating roller. By controlling the rotation of the rotating roller, the spools rotate synchronously. It is understood that the take-up reel 15 can be connected to the output shaft of a motor, and the motor drives the take-up reel 15 to rotate, thereby winding the cutting wire 131, so that the cutting wire 131 and the pay-off reel 14 move.

[0051] In this embodiment, the slicing machine 1 further includes a plating device 16, which is mounted on the frame 11 along the second direction D2. The plating device 16 is located between the rotating roller 132 and the feed reel 14. A portion of the cutting wire 131 passes through the plating device 16. The plating device 16 is used to plating an abrasive layer (not shown) onto the surface of the cutting wire 131. It is understood that the cutting wire 131 generally includes a metal busbar (not shown) and an abrasive layer attached to the surface of the metal busbar. The two ends of the metal busbar are respectively connected to the feed reel 14 and the take-up reel 15. As the metal busbar is driven by the take-up reel 15 and passes through the plating device 16, the plating device 16 can plating the metal busbar, so that the surface of the metal busbar is attached with an abrasive layer, thereby giving the cutting wire the expected cutting performance.

[0052] In this embodiment, tungsten wire is used as an example for illustration, but it is not to be said that the following content applies only to this example.

[0053] In this embodiment, the slicing machine 1 integrates the plating device 16 onto the frame 11, reducing the overall footprint of the wire cutting production equipment and the slicing machine 1, thus lowering equipment investment and land costs. Simultaneously, it allows for seamless integration of the manufacturing process of the wire cutting 131 and the silicon wafer cutting process. The plated wire cutting 131 can be directly moved to the cutting station for cutting, simplifying the overall silicon wafer production process and improving production efficiency. Furthermore, with both ends of the wire cutting 131 connected to the unloading reel 14 and the take-up reel 15, the wire cutting 131 is moved by the rotation of the take-up reel 15, eliminating the need for repeated unloading and take-up, reducing the risk of wire deformation, maintaining good cutting performance and precision, and minimizing silicon wafer cutting losses.

[0054] In some embodiments, the plating apparatus 16 includes a plating chamber 161, a sanding assembly 162, and an electroplating assembly 163. The plating chamber 161 is fixed to the frame 11. In the second direction D2, through holes (not shown) are respectively formed at opposite ends of the plating chamber 161, through which the cutting wire 131 passes. The sanding assembly 161 and the electroplating assembly 162 are disposed inside the plating chamber 161, and can respectively sand-apply and electroplat the portion of the cutting wire inside the plating chamber 161, thereby forming the desired cutting wire 131. The plating chamber 161 can isolate the sanding assembly 162 and the electroplating assembly 163 from the rest of the slicing machine 1, preventing the processing of the cutting wire 131 from being affected. After sanding and electroplating, the cutting wire 131 can be moved by the winding wheel 15 and wrap around the outer circumference of the rotating roller 132 for cutting silicon rods. As can be seen, the slicing machine 1 in this embodiment can process the cutting line 131 before cutting the silicon rod, saving the silicon wafer production process steps and improving production efficiency.

[0055] Specifically, the plating cavity 161 can be divided into an abrasive application zone and an electroplating zone. The abrasive application assembly 162 is located in the abrasive application zone, and the electroplating assembly 163 is located in the electroplating zone. The abrasive application zone and the electroplating zone can be separated by a partition 1611. This prevents abrasive from entering the electroplating zone and also prevents materials from entering the abrasive application zone, thus ensuring the cleanliness of the abrasive and electroplating materials and ensuring that the cutting line 131 has good cutting performance after processing.

[0056] Understandably, the abrasive coating assembly 162 allows the surface of the metal busbar to adhere particles used for cutting silicon rods, typically corundum. The electroplating assembly 163 can plate a metal layer onto the surface of the metal busbar to fix the corundum and other particles, preventing them from detaching from the metal busbar and ensuring that the cutting wire 131 has good cutting performance.

[0057] In some embodiments, the plating cavity 161 can be made into a closed cavity, which can prevent the diamond particles from leaking out of the plating cavity 161 and prevent it from affecting the normal operation of the slicer 1.

[0058] In some embodiments, a sealing and heat-insulating layer (not shown) is provided on the inner wall of the plating chamber 161. In other embodiments, a sealing and heat-insulating layer is provided between the plating chamber 161 and the frame 11. In still other embodiments, a sealing and heat-insulating layer is provided on both the inner wall of the plating chamber 161 and between the plating chamber 161 and the frame 11. The aforementioned sealing and heat-insulating layer can provide thermal insulation and airtight sealing, which can prevent the heat generated by the cutting device 13 of the slicer 1 during high-speed movement from affecting the plating device 16, and can also prevent the leakage of mist caused by the evaporation of the electroplating electrolyte, as well as prevent external dust and moisture from entering the cavity, thus ensuring the stability of the composition of the electroplating system.

[0059] In some embodiments, the abrasive application assembly 162 includes an abrasive application nozzle 1621 and a stirring tank 1622 disposed within the plating chamber 161. The abrasive application nozzle 1621 and the stirring tank 1622 are arranged at intervals in a first direction D1 (i.e., the height direction). The abrasive application nozzle 1621 is used to spray abrasive into the stirring tank 1622, and the stirring tank 1622 is used to hold the electroplating solution. The portion of the metal busbar corresponding to the stirring tank 1622 is immersed in the electroplating solution. In this way, the abrasive enters the stirring tank 1622 to form an electroplating suspension of abrasive, and the metal busbar is immersed in the electroplating suspension of abrasive, causing particles to adhere to the surface of the metal busbar. It is understood that the stirring tank 1622 can stir the suspension it holds, preventing the deposition of abrasive and ensuring that the abrasive is evenly distributed in the electroplating solution, thereby improving the uniformity of the abrasive distribution on the surface of the metal busbar.

[0060] In some embodiments, the abrasive feeding assembly 162 further includes an abrasive storage bin 1623, which stores abrasive and is connected to the abrasive feeding nozzle 1621 to supply abrasive to the nozzle. It is understood that the abrasive storage bin 1623 stores granular abrasive. The abrasive storage bin 1623 itself may have a grinding function to grind blocky or large abrasive particles into particles of appropriate size as needed. Of course, the abrasive storage bin 1623 may also simply be a storage unit, with abrasive supplied to the bin 1623 according to requirements via an external grinding device (not shown) or manually.

[0061] Optionally, the abrasive storage bin 1623 can be disposed inside the plating cavity 161 or outside the plating cavity 161. This embodiment does not impose any special limitations on the specific location and form of the abrasive storage bin 1623.

[0062] In some embodiments, the electroplating assembly 163 includes a first polar roller 1631 and a second polar electroplating element 1632 disposed in the plating cavity 161. The first polar roller 1631 is rotatably connected to the plating cavity 161. The cutting line 131 overlaps the surface of the first polar roller 1631. The second polar electroplating element 1632 and the first polar roller 1631 are disposed on opposite sides of the cutting line 131. The first polar roller 1631 is used to drive the cutting line 131 to move along the second direction D2.

[0063] Specifically, the first polarity roller 1631 has a first polarity. Since the metal busbar overlaps the surface of the first polarity roller 1631, the metal busbar also possesses a first polarity. Simultaneously, when the first polarity roller 1631 rotates, it can use friction to move the metal busbar, appropriately reducing the load on the take-up reel 15. The second polarity electroplated part 1632 has a second polarity. In this way, the metal busbar and the second polarity electroplated part 1632 can have different polarities, thereby achieving electroplating. Generally, the first polarity is the cathode, meaning the first polarity roller 1631 is the cathode, and the metal busbar in contact with the first polarity roller 1631 also constitutes the cathode, while the second polarity electroplated part 1632 is the anode. It can be understood that the second polarity electroplated part 1632 is the plating metal; that is, through electroplating, the second polarity electroplated part 1632 forms an electroplated layer on the surface of the metal busbar. In this embodiment, by forming an electroplating layer on the surface of the metal busbar, abrasive particles can be embedded in the electroplating layer, and the electroplating layer is used to fix the abrasive particles attached to the surface of the metal busbar. At the same time, the electroplating layer covering the surface of the metal busbar can protect the metal busbar and avoid or reduce the risk of wear and oxidation on the surface of the metal busbar.

[0064] Understandably, since the cutting line 131 cuts the silicon rod using abrasive particles fixed to the surface of the metal busbar, the thickness of the electroplated layer on the surface of the metal busbar is generally smaller than the particle size / diameter of the abrasive particles. This ensures that a portion of the abrasive particles is exposed outside the plating layer, allowing the silicon rod to be cut during the reciprocating motion of the cutting line 131. For example, the particle size of the abrasive particles is generally 4-6 micrometers, and the thickness of the plating layer is generally 1-3 micrometers. The thickness of the plating layer refers to its radial thickness on the metal busbar.

[0065] It should be noted that, to ensure the abrasive coating and electroplating effects meet expectations and remain stable, it is necessary to reasonably control the temperature inside the plating chamber 161, as well as the temperature and level of the suspension. Specifically, multiple temperature sensors can be installed inside the plating chamber 161 to detect the temperature inside the plating chamber 161 and the temperature of the suspension. In addition, a level sensor can be installed in the stirring tank 1622 to detect the level of the suspension in the stirring tank 1622. When the temperature inside the plating chamber 161 and the temperature of the suspension are too low, heating is performed to raise the temperature; when the temperature inside the plating chamber 161 and the temperature of the suspension are too high, cooling is performed to lower the temperature; when the temperature inside the plating chamber 161 and the temperature of the suspension exceed the limit threshold, power can be reduced or the machine can be shut down to avoid scrapping the electroplated layer. When the level of the suspension in the stirring tank 1622 is too low, the abrasive storage hopper 1623 is replenished.

[0066] It should be noted that since the metal busbar is immersed in the electroplating solution at the abrasive assembly 162, the surface of the metal busbar entering the electroplating zone and the surface of the abrasive adhering to the surface of the metal busbar are both wetted by the electroplating solution, which helps to improve electroplating efficiency and electroplating quality.

[0067] In some embodiments, the plating apparatus 16 further includes a cleaning component 164, which is disposed on the side of the electroplating component 163 away from the abrasive application component 162 in the second direction D2. The cleaning component 164 is used to clean the dicing wire 131 after electroplating. Specifically, after the metal busbar undergoes abrasive adhesion and electroplating, there may be some unfixed abrasive particles, dust, and other impurities on the surface of the metal busbar. Therefore, cleaning the dicing wire 131 after electroplating by the cleaning component 164 can reduce impurities on the surface of the dicing wire 131, which helps to improve the cutting performance of the dicing wire 131, improves the cutting accuracy when cutting silicon rods, and reduces the risk of contamination on the surface of silicon wafers.

[0068] In some embodiments, the cleaning assembly 164 includes a cleaning nozzle 1641 for spraying fluid onto the cutting line 131 to clean it by flushing the cutting line 131 with the fluid. It is understood that the cleaning nozzle 1641 is disposed along the second direction D2 on the side of the electroplating assembly 163 away from the sanding assembly 162.

[0069] Optionally, the fluid used for cleaning can be a liquid, a gas, or a gas-liquid mixture. The pressure and flow rate required when spraying the fluid are not particularly limited in this embodiment, as long as the cleaning requirements can be met.

[0070] In some embodiments, the cleaning assembly 164 further includes a dryer 1642 for drying the cutting wire 131. Specifically, in the second direction D2, the dryer 1642 may be positioned on the side of the cleaning nozzle 1641 away from the electroplating assembly 163, and the dryer 1642 may dry the cutting wire 131 by blowing air and / or heating.

[0071] For example, the cleaning nozzle 1641 may be a high-pressure cleaning nozzle, and the dryer 1642 may be a hot air dryer.

[0072] It should be noted that the cleaning nozzle 1641 and the dryer 1642 are both located inside the plating chamber 161. This prevents impurities on the surface of the cutting line 131 from falling onto the frame 11, the cutting device 13, etc., after being removed, thereby preventing contamination of the silicon rod or wafer.

[0073] It is understood that a partition 1611 may be provided inside the plating cavity 161 to form a cleaning and drying zone on the basis of the sanding zone and the electroplating zone, and the aforementioned cleaning component 164 is provided in the cleaning and drying zone.

[0074] In some embodiments, a waste liquid recovery port (not shown) is provided at the bottom of the plating chamber 161. The suspension overflowing from the stirring tank 1622, a portion of the suspension sprayed from the sand spray nozzle 1621, the electroplating solution not plated to the surface of the metal busbar, and the cleaning waste liquid from cleaning the cutting line 131 can all be collected in the waste liquid recovery port and stored in the corresponding container, which can avoid pollution and provide convenience for subsequent waste liquid recycling.

[0075] In some embodiments, the plating apparatus 16 further includes a detection component 165, which detects real-time parameters of the surface of the cutting line 131 to determine whether the processed cutting line 131 meets the expected requirements. This arrangement avoids cutting the silicon rod if the cutting line 131 does not meet the expected requirements, preventing problems such as short lifespan of the cutting line 131 and waste of silicon rod material. Understandably, in the second direction D2, the detection component 165 is positioned on the side of the electroplating assembly 163 away from the sandblasting assembly 162. When the plating apparatus 16 includes a cleaning assembly 164, the detection component 165 is positioned on the side of the cleaning assembly 164 away from the sandblasting assembly 162.

[0076] Optionally, the detection component 165 can be disposed inside the plating cavity 161 or outside the plating cavity 161. This embodiment does not impose any special limitations on this.

[0077] In some embodiments, the detection component 165 includes an adhesion detector (not shown) capable of detecting at least one parameter among the density, particle size, and uniformity of abrasive adhesion on the surface of the cutting line 131. Based on the detection results from the adhesion detector, the operator can adjust the operating parameters of the abrasive application component 162 in real time, thereby adjusting the abrasive adhesion parameters on the surface of the cutting line 131 to meet the expected requirements.

[0078] In some embodiments, the detection component 165 further includes a thickness sensor (not shown) for detecting thickness parameters of the electroplated layer on the surface of the cutting line 131. For example, the thickness sensor can detect at least one parameter of the thickness magnitude and thickness uniformity of the electroplated layer on the cutting line 131. An operator can adjust the electroplating power of the electroplating component 163 in real time based on the detection results of the thickness sensor to adjust the thickness of the electroplated layer.

[0079] It should be noted that when the detection component 165 includes an adhesion detector and a thickness sensor, the adhesion detector and the thickness sensor can be simultaneously disposed inside or outside the plating cavity 161; or, one of the adhesion detector and the thickness sensor can be disposed inside the plating cavity 161 and the other can be disposed outside the plating cavity 161.

[0080] See you again Figure 1 In some embodiments, the slicing machine 1 further includes a control device 17, which is used to receive the above-mentioned real-time parameters, that is, the control device 17 is used to receive at least one of the above-mentioned adhesion parameters and thickness parameters, and compare the received parameters with the target parameters. When the real-time parameters deviate from the target parameters, the operating parameters of the sanding assembly 162 and / or the electroplating assembly 163 are adjusted, thereby changing the surface parameters of the cutting line 131.

[0081] The following description uses the example of the control device 17 simultaneously receiving the above-mentioned adhesion parameters and thickness parameters, comparing the adhesion parameters and thickness parameters with the corresponding target parameters respectively, and controlling the sanding component 162 and the electroplating component 163 according to the comparison structure. However, it is not stated that the following content is only applicable to this example.

[0082] Specifically, the control device 17 is electrically connected to the abrasive application assembly 162, the electroplating assembly 163, and the detection assembly 165. After the detection assembly 165 detects the surface parameters of the processed and dried cutting line 131—namely, the thickness of the electroplated layer and the adhesion of the abrasive—it sends these parameters to the control device 17. The control device 17 then compares the received real-time parameters with the target parameters preset by the operator. When the real-time parameters detected by the detection assembly 165 deviate from the preset target parameters, the control device 17 sends a control command to the abrasive application assembly 162 and / or the electroplating assembly 163, thereby changing the operating parameters of the abrasive application assembly 162 and / or the electroplating assembly 163, and consequently altering the surface parameters of the processed cutting line 131 to conform to the preset target parameters.

[0083] Understandably, the electrical connection between the control device 17 and the sanding assembly 162, the electroplating assembly 163, and the detection assembly 165 can be wired or wireless. For example, the control device 17 can be connected to the sanding assembly 162, the electroplating assembly 163, and the detection assembly 165 via cables; or, the control device 17 can be wirelessly connected to the sanding assembly 162, the electroplating assembly 163, and the detection assembly 165 via wireless communication modules such as WiFi, Bluetooth, or RF modules; or, a portion of the sanding assembly 162, the electroplating assembly 163, and the detection assembly 165 can be connected to the control device 17 via a wired connection, while another portion can be connected to the control device 17 via a wireless connection.

[0084] In some embodiments, the control device 17 adjusts the operating parameters of the sand-coating assembly 162 and / or the electroplating assembly 163 only when it determines that the interpolation difference between the real-time parameters and the target parameters exceeds a preset threshold. In other words, when the real-time parameters deviate from the target parameters, but the deviation is still within the allowable range, the control device 17 will not control the sand-coating assembly 162 and the electroplating assembly 163 to adjust their operating parameters. In this way, while ensuring that the cutting line 131 has the expected cutting performance, the sensitivity of the control device 17 can be appropriately reduced, reducing the risk of equipment jamming or even crashing due to frequent interaction and adjustment between the plating device 16 and the control device 17, avoiding any interruption to the slicing machine 1 during the silicon rod cutting process, thereby avoiding any negative impact on the cutting quality of the silicon wafer.

[0085] In some embodiments, the control device 17 includes a parameter preset module 171, which is electrically connected to the sanding assembly 162, the electroplating assembly 163, and the detection assembly 165. The parameter preset module 171 stores the aforementioned target parameters and is used to receive the aforementioned real-time parameters. It is understood that before the slicing machine 1 performs cutting operations, the operator can input the target parameters through the parameter preset module 171, and upon starting the slicing machine 1, the plating device 16 will process the cutting line 131 according to the target parameters. When necessary, the operator can directly modify the target parameters at the parameter preset module 171.

[0086] In some embodiments, the control device 17 further includes an adjustment module 172, which is electrically connected to the parameter preset module 171, the sanding assembly 162, and the electroplating assembly 163. When the parameter preset module 171 determines that there is a difference between the real-time surface parameters detected by the detection assembly 165 and the preset target parameters, the adjustment module 172 sends control commands to the sanding assembly 162 and the electroplating assembly 163 to adjust their working parameters. It should be noted that the parameter preset module 171 is electrically connected to the sanding assembly 162 and the electroplating assembly 163 through the adjustment module 172. In this way, when the real-time parameters after the cutting line 131 deviate from the target parameters, the adjustment module 172 can automatically adjust and control them, reducing reliance on operators, thereby reducing manpower input and improving production efficiency.

[0087] In some embodiments, the control device 17 further includes an alarm module 173, which is electrically connected to a parameter preset module 171. When the real-time parameters detected by the detection component 165 after multiple adjustments to the sanding component 162 and the electroplating component 163 are still not up to standard, and / or when the adjusted operating parameters of the sanding component 162 and the electroplating component 163 have exceeded a reasonable threshold, the alarm module 173 can issue an alarm signal to remind the operator to take over the control.

[0088] It should be noted that the alarm signal can be one or more of the following: sound signal, optical signal, and graphic signal. This embodiment does not impose any special limitations on this.

[0089] In some embodiments, the alarm module 173 can communicate with the main control system of the slicer 1. When the alarm module 173 issues an alarm signal, it can simultaneously send a signal to the main control system to reduce the working speed or stop the slicer 1. At the same time, it can trigger system log recording to record the abnormal conditions related to the equipment in the log, which is convenient for later fault diagnosis and equipment maintenance.

[0090] In some embodiments, the slicing machine 1 further includes a tension adjustment device 18, which is disposed on the frame 11 and located between the wire feeding reel 14 and the plating device 16. The tension adjustment device 18 is used to maintain the tension of the cutting wire 131 within a preset range. It is understood that in practical applications, the tension of the cutting wire 131 may vary, resulting in it being too low or too high. If the tension is too low, the cutting wire 131 will not be taut, potentially leading to uneven sandblasting and electroplating; if the tension is too high, it may cause the cutting wire 131 to deform or even break. Therefore, by controlling the tension of the cutting wire 131 in real time through the tension adjustment device 18, the cutting wire 131 is kept in a reasonable state, ensuring the smooth progress of the plating process and preventing deformation or breakage of the cutting wire 131.

[0091] In some embodiments, the tension adjustment device 18 includes a floating roller 181 and a force sensor (not shown). The force sensor is mounted on the floating roller 181, and the cutting wire 131 overlaps the force sensor. This allows the force sensor to detect the tension / force of the cutting wire 131 in real time. Specifically, the force sensor and the floating roller 181 are electrically connected. The force sensor can send the detected mechanical parameters to the floating roller 181, which then adjusts the tension / force of the cutting wire 131 in real time based on the received mechanical parameters.

[0092] In other embodiments, the force sensor and the floating roller are electrically connected to the control device 17 or the main control system of the slicer 1. The control device 17 or the main control system of the slicer 1 receives the data detected by the force sensor, and then determines whether the tension / tension of the cutting line 131 needs to be adjusted based on the detected data. If so, relevant data is sent to the floating roller 181 to make the floating roller 181 move.

[0093] In some embodiments, the floating roller 181 is a pneumatic floating roller that can control the tension of the cutting wire 131 to be maintained at 2-10N. For example, the tension of the cutting wire 131 can be maintained at 2N, 3N, 4N, 5N, 6N, 7N, 8N, 9N, 10N or other values ​​within this range.

[0094] To facilitate understanding of the slicer 1 in this embodiment, the following will further explain the linkage relationship between the various devices and modules in the slicer 1.

[0095] Before cutting the silicon rod, the operator can input / edit expected target parameters in the parameter preset module 171, including but not limited to the temperature in the plating chamber 161, the temperature and level of the suspension, the diameter of the metal busbar, the wire feeding speed, the particle size of the abrasive, the adhesion density, the abrasive flow rate, the thickness of the electroplated layer, and the electroplating current. After receiving the target parameters input / edited by the operator through the parameter preset module 171, the adjustment module 172 controls the take-up reel 15 and the plating device 16 to operate according to the target parameters. When the cutting wire 131 is completed and moves to the detection component 165, the detection component 165 detects the real-time parameters on the surface of the cutting wire 131. The parameter preset module 171 acquires the above real-time parameters and compares them with the target parameters input / edited by the operator. When the real-time parameters deviate from the target parameters by more than a preset threshold, the adjustment module 172 issues a control command to adjust the working parameters of the abrasive component 162 and the electroplating component 163 to ensure that the subsequently processed cutting wire 131 meets the target parameters.

[0096] For example, when the detection component 165 detects that the abrasive adhesion density is low, the adjustment module 172 controls the stirring tank 1622 to increase the stirring speed, reducing abrasive deposition. Simultaneously, it can increase the spray flow rate of the sanding nozzle 1621 and increase the electroplating current applied to the second polarity electroplated part 1632. This improves the adhesion and coating effect of the abrasive. In some embodiments, if the relevant parameters still do not meet the standard after multiple adjustments, the alarm module 173 triggers an alarm. The threshold for the number of adjustments can be set according to actual needs, such as 5, 6, or more times, or less than 5 times.

[0097] In another example, when the detection component 165 detects that the thickness of the electroplated layer is less than a preset value, the adjustment module 172 can first increase the electroplating current to accelerate the deposition rate of the metal plating layer. Furthermore, the adjustment module 172 can control the take-up reel 15 to reduce its take-up speed and extend the electroplating time. If the relevant parameters have been adjusted to the equipment's rated limits, but the thickness of the electroplated layer still cannot meet expectations, the alarm module 173 will sound an alarm to remind the operator to inspect the equipment. After inspection and adjustment are completed, the detection component 165 continues to perform detection, thus forming a fully automatic closed-loop control system of detection-comparison-adjustment-retest.

[0098] For automatic temperature regulation and control in the plating chamber 161, specifically, an operator can input an expected electroplating process temperature threshold interval, which is usually 40°C-55°C, into the parameter preset module 171, and can set an upper alarm temperature and a lower alarm temperature at the same time. Then, a plurality of temperature sensors arranged in the plating chamber 161 can detect the temperature in the plating chamber 161 in real time and send corresponding detection data to the parameter preset module 171. After the parameter preset module 171 receives the data detected by the temperature sensors, it determines whether the corresponding temperature value exceeds the upper threshold. If it is detected that the temperature is higher than the upper threshold, the cooling device arranged in the plating chamber 161 is activated to lower the temperature of the electroplating system; meanwhile, the electroplating current can be appropriately reduced to lower the generation rate of electrolytic Joule heat until the temperature in the plating chamber 161 drops to the standard interval. If it is detected that the temperature is lower than the lower threshold, the heating device arranged in the plating chamber 161 can be activated for heating; the electroplating current can also be appropriately increased synchronously for compensation. When it is detected that the temperature is higher than the upper alarm temperature or lower than the lower alarm temperature, the alarm module 173 is triggered, and the operating power of the equipment is automatically reduced to prevent the plating layer from being scrapped.

[0099] It can be understood that the upper alarm temperature is generally higher than the upper threshold of the electroplating process threshold interval, and the lower alarm temperature is generally lower than the lower threshold of the electroplating process threshold interval. For the cooling device in the plating chamber 161, it may be a water-cooled heat exchange coil, and the heating device may be a PTC constant temperature heating assembly.

[0100] For automatic liquid level regulation and control of the stirring tank 1622, specifically, an operator can input a reference liquid level height at the parameter preset module 171, and set an upper safety threshold and a lower safety threshold for the liquid level. Then, the liquid level height of the electroplating solution is detected in real time by a liquid level sensor arranged in the plating chamber 161, and the detection data is uploaded to the parameter preset module 171, and the parameter preset module 171 performs comparison and analysis on the detected data. If it is determined that the detected liquid level height is lower than the lower threshold, the regulation module 172 controls a solution replenishment pump matched with an abrasive storage bin 1623 to replenish solution to the stirring tank 1622 until the liquid level reaches the expected height range; if it is determined that the detected liquid level height is higher than the upper threshold, the regulation module 172 controls to open the discharge port of the stirring tank 1622 for discharging, so that the liquid level height of the stirring tank 1622 drops to the expected range. It can be understood that the discharge port of the stirring tank 1622 can be communicated with the waste liquid recovery port of the plating chamber 161, so that the electroplating solution discharged from the stirring tank 1622 is discharged from the waste liquid recovery port.

[0101] Please also refer to Figure 5 , Figure 5 is a slicing method according to an embodiment of the present application.

[0102] A second aspect of this embodiment also provides a slicing method applied to the slicer 1 described above, the slicing method comprising: S1. Predict the cutting wear of the cutting line and set the target parameters for the plated cutting line based on the cutting wear of the cutting line. S2. Control the plating device to plating an abrasive layer onto the surface of the cutting line according to the target parameters; S3. Control the take-up reel to wind the cutting wire so that the cutting wire is wound around the outer circumference of the rotating roller; S4. Control the rotating roller to reciprocate so that the cutting line moves back and forth; S5. Control the drive device to move the silicon rod toward the cutting line so that the cutting line cuts the silicon rod.

[0103] In step S1, during the actual cutting process, the cutting wire 131 will experience wear. When the wear reaches a certain level, the cutting performance of the cutting wire 131 will significantly decrease, leading to reduced cutting accuracy of the silicon rod and increased loss of silicon rod material. Therefore, operators can predict the degree of wear that the cutting wire 131 may reach after working in the plane for a certain period of time or cutting a certain amount of silicon rod based on experience or by analyzing historical data, and then set appropriate target parameters for the predicted wear.

[0104] For example, during the cutting of silicon rods, the best cutting method for the same silicon rod is uninterrupted cutting. That is, the wear resistance of the cutting wire 131 should be sufficient to ensure the completion of cutting at least one silicon rod. In this case, the operator can predict the wear degree of the cutting wire 131 after cutting one silicon rod based on parameters such as the shape and size of the silicon rod. Then, based on the required number of silicon rods to be cut (at least one), the wear degree of the cutting wire 131 after cutting is obtained. Thus, before manufacturing the cutting wire 131, the target parameters can be set to at least the parameters that meet the above requirements, ensuring that the entire cutting process is uninterrupted.

[0105] Specifically, the operator sets the target parameters in the parameter preset module 171, such as the temperature in the plating chamber 161, the temperature and level of the suspension, the wire diameter of the metal busbar, the wire feeding speed, the particle size of the abrasive, the adhesion density, the abrasive flow rate, the thickness of the electroplating layer, and the electroplating current, as described in the first aspect.

[0106] After setting the target parameters, the plating device 16 needs to manufacture the corresponding cutting lines 131 according to the target parameters. Specifically, in step S2, the abrasive nozzle 1621 sprays abrasive into the stirring tank 1622 according to the target parameters, forming an electroplating suspension that immerses a portion of the metal busbar, allowing the abrasive to adhere to its surface. The metal busbar with the abrasive adhering to its surface moves to the electroplating area to complete electroplating. The electroplating layer covers the surface of the metal busbar and fixes the abrasive on its surface. Afterward, the electroplated metal busbar moves to the cleaning and drying area for cleaning and drying.

[0107] After the cutting line 131 is made, in step S3, specifically, the take-up wheel 15 is controlled to take up the wire, so that the processed cutting line 131 is moved to the position corresponding to the rotating roller 132, so that the cutting line 131 is wrapped around the outer periphery of the rotating roller 132 to form a cutting mesh for subsequent cutting.

[0108] For step S4, the cutting line 131 is reciprocated by rotating the rotating roller 132.

[0109] In step S5, when the silicon rod is driven by the drive device 12 and moves to contact the cutting mesh, the cutting mesh moves synchronously back and forth due to the movement of the rotating roller 132, thereby generating friction between it and the silicon rod, thus achieving the cutting of the silicon rod. It can be understood that throughout the cutting process, the drive device 12 continues to drive the silicon rod to move, ensuring that the silicon rod continuously contacts the cutting line 131.

[0110] Please see also Figure 6 , Figure 6 This is another slicing method according to an embodiment of this application.

[0111] It should be noted that due to factors such as processing errors, even if the operator sets the target parameters, the processed dicing line 131 may still differ from the expected performance. In this case, if the processed dicing line is used directly to cut the silicon rod, the cutting effect may not meet expectations, or even the cut silicon wafer may be unusable. Therefore, before completing step S2 and proceeding to step S3, step S6 can be implemented first to detect the real-time parameters of the dicing line surface. If the real-time parameters deviate from the target parameters, the operating parameters of the plating device should be adjusted and the dicing line reprocessed until the real-time parameters correspond to the target parameters; if the real-time parameters correspond to the target parameters, step S3 can be performed normally.

[0112] Specifically, step S6 involves detecting the surface parameters of the dicing wire 131 after processing using the detection component 165. These parameters include, for example, the abrasive particle size, adhesion density, and the thickness of the electroplated layer. If any of these parameters deviates from the target parameters, the control device 17 controls the plating device 16 to adjust its operating parameters before processing the dicing wire 131 again. For specific detection and control methods, please refer to the description in the first aspect of this embodiment; details will not be repeated here. This setup allows for the detection of whether the dicing wire 131 meets the expected standards before cutting, preventing cutting when the dicing wire 131's performance is substandard and thus avoiding loss of silicon rod material.

[0113] The deviation between the real-time parameter and the target parameter can refer to either interpolation between them or the difference between them exceeding a preset range. In the second case, if the difference between the real-time parameter and the target parameter is within the preset range, then the real-time parameter is considered to correspond to the target parameter.

[0114] Understandably, by employing the aforementioned slicing method and slicing machine 1 to slice silicon rods, the overall footprint of the wire cutting production equipment and slicing machine 1 can be reduced, lowering equipment investment and land costs. Simultaneously, it allows for a seamless integration of the manufacturing process of the wire cutting 131 and the silicon wafer cutting process. The plated wire cutting 131 can be directly moved to the cutting station for cutting, simplifying the overall silicon wafer production process and thus improving silicon wafer production efficiency. Furthermore, with both ends of the wire cutting 131 connected to the unloading reel 14 and the take-up reel 15, the wire cutting 131 is moved by the rotation of the take-up reel 15, eliminating the need for repeated unloading and take-up, reducing the risk of wire cutting 131 deformation, maintaining good cutting performance and precision, and reducing silicon wafer cutting losses.

[0115] The third aspect of this embodiment provides a silicon wafer manufactured by the slicing method described in the second aspect above.

[0116] Understandably, the silicon wafer in this embodiment is formed by slicing a silicon rod using the slicing machine 1 described in the first aspect.

[0117] The slicer, slicing method, and silicon wafer provided in the embodiments of this application have been described in detail above. Specific examples have been used in this document to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the ideas of this application. There may be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A slicer, characterized in that, include: frame; A drive device is provided on the frame, the drive device is used to fix the workpiece to be cut and drive the workpiece to be cut to reciprocate along a first direction; A cutting device includes a cutting wire and a plurality of rotating rollers. The plurality of rotating rollers are rotatably mounted on the frame and are spaced apart from the driving device along the first direction. The cutting wire surrounds the outer periphery of the plurality of rotating rollers, and the plurality of rotating rollers are used to drive the cutting wire to reciprocate to cut the object to be cut. A wire feeding reel is disposed on the frame and is spaced apart from a plurality of rotating rollers along a second direction. One end of the cutting wire is connected to the wire feeding reel, and the wire feeding reel is used to release the cutting wire. A take-up reel is provided on the frame and along the second direction on the side of the plurality of rotating rollers away from the feed reel. The other end of the cutting wire is connected to the take-up reel, and the take-up reel is used to wind the cutting wire. A plating apparatus is disposed along the second direction between the wire feeding reel and the plurality of rotating rollers, a portion of the cutting wire passes through the plating apparatus, and the plating apparatus is used to plating an abrasive layer onto the surface of the cutting wire; The second direction is the direction that intersects with the first direction.

2. The slicer according to claim 1, characterized in that, The plating apparatus includes a plating chamber, an abrasive application component, and an electroplating component. The abrasive application component and the electroplating component are sequentially disposed in the plating chamber along the second direction. The cutting line passes through the plating chamber. The abrasive application component is used to attach abrasive to the surface of the cutting line, and the electroplating component is used to plate an electroplating layer on the surface of the cutting line.

3. The slicer according to claim 2, characterized in that, The abrasive assembly includes an abrasive nozzle and a stirring tank disposed in the plating chamber. The abrasive nozzle and the stirring tank are arranged at intervals along the first direction. The abrasive nozzle is used to spray abrasive into the stirring tank, and the stirring tank is used to load the electroplating solution. The portion of the cutting line corresponding to the stirring tank is immersed in the electroplating solution. And / or, the electroplating assembly includes a first polar roller and a second polar electroplating element disposed within the plating cavity, the first polar roller being rotatably connected to the plating cavity, the cutting line overlapping the surface of the first polar roller, the second polar electroplating element and the first polar roller being disposed on opposite sides of the cutting line, and the first polar roller being used to drive the cutting line to move along the second direction.

4. The slicer according to claim 2, characterized in that, The plating apparatus further includes a cleaning component, which is disposed along the second direction on the side of the electroplating component away from the sanding component, and is used to clean the cutting line after electroplating.

5. The slicer according to claim 4, characterized in that, The cleaning assembly includes a cleaning nozzle for spraying fluid onto the cutting line to clean it. And / or, the cleaning component includes a dryer for drying the cutting line.

6. The slicer according to claim 2, characterized in that, The plating apparatus further includes a detection component disposed along the second direction on the side of the electroplating component away from the sand-applying component, the detection component being used to detect real-time parameters of the cutting line surface.

7. The slicer according to claim 6, characterized in that, The detection assembly includes a thickness sensor and an adhesion detector. The thickness sensor is used to detect the thickness of the electroplated layer, and the adhesion detector is used to detect at least the adhesion density of the abrasive layer.

8. The slicer according to claim 6, characterized in that, The slicing machine also includes a control device electrically connected to the sanding assembly, the electroplating assembly, and the detection assembly. The control device is used to receive the real-time parameters and compare them with the target parameters. When the real-time parameters deviate from the target parameters, the control device adjusts the operating parameters of the sanding assembly and the electroplating assembly.

9. The slicer according to claim 8, characterized in that, The control device is used to adjust the operating parameters of the sand-applying component and the electroplating component when the difference between the real-time parameter and the target parameter exceeds a preset threshold.

10. The slicer according to claim 8, characterized in that, The control device includes a parameter preset module, which is electrically connected to the sand-applying component, the electroplating component, and the detection component. The parameter preset module stores the target parameters and is used to receive the real-time parameters.

11. The slicer according to claim 10, characterized in that, The control device further includes an adjustment module, which is electrically connected to the parameter preset module, the sanding component, and the electroplating component. The adjustment module is used to adjust the operating parameters of the sanding component and the electroplating component according to the instructions of the control module.

12. The slicer according to claim 1, characterized in that, The slicing machine also includes a tension adjustment device, which is disposed on the frame and located between the wire feeding wheel and the plating device. The tension adjustment device is used to keep the tension of the cutting wire within a preset range.

13. The slicer according to claim 12, characterized in that, The tension adjustment device includes a floating roller and a force sensor. The floating roller is movably mounted on the frame and located between the wire feeding reel and the plating device. The force sensor is electrically connected to the floating roller. The cutting wire is wound around the outer periphery of the floating roller. The force sensor is used to detect the tension of the cutting wire. The floating roller is used to receive the detection data from the force sensor and adjust the tension of the cutting wire according to the detection data.

14. A slicing method, applied to the slicer as described in claim 1, characterized in that, include: Predict the cutting wear of the cutting line, and set the target parameters for plating the cutting line based on the cutting wear. The coating device is controlled to coat an abrasive layer onto the surface of the cutting line according to the target parameters; The take-up reel is controlled to wind the cutting wire so that the cutting wire is wound around the outer periphery of the rotating roller; The rotating roller is controlled to reciprocate so that the cutting line reciprocates. The drive device is controlled to move the crystal rod toward the cutting line so that the cutting line cuts the crystal rod.

15. A silicon wafer, characterized in that, The silicon wafer is manufactured by the slicing method as described in claim 14.

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