Encapsulation adhesive composition for optoelectronic device package, porous hybrid encapsulation film layer and preparation method thereof

Abstract

The application discloses a packaging glue composition for photoelectric device packaging, a porous hybrid packaging film layer and a preparation method thereof. The packaging glue composition comprises a transparent polymer precursor, a POSS structure reinforcing component with a reactive functional group matched with the polymer precursor, and a photo-functional pore-forming phase capable of releasing volatile components under heat, and the difference between the refractive index of the photo-functional pore-forming phase and the refractive index of the transparent polymer precursor after curing is less than or equal to 0.05. The packaging glue composition is coated on the surface of a photoelectric device chip array; a pre-crosslinking treatment is performed, and then a heat treatment is performed at a high temperature, so that an unordered connected pore structure is formed in a nano-hybrid network skeleton, and a porous hybrid packaging film layer is obtained. The rigid nano-hybrid network skeleton is used for supporting and preventing the collapse of high-temperature pore-forming, and the refractive index matching is used for inhibiting light scattering, so that the synergy of low effective refractive index and high light transmittance is realized, and the light extraction efficiency and the thermal management reliability of a device are improved.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic device packaging technology, specifically relating to an encapsulating adhesive composition for optoelectronic device packaging, a porous hybrid encapsulating film layer, and a method for preparing the same. Background Technology

[0002] In the packaging technology of high-density optoelectronic devices such as Micro LEDs, the heat generation per unit area increases dramatically with the miniaturization of chip size and the increase in integration. While traditional dense polymer encapsulants offer good light transmittance, their low thermal conductivity and mismatched coefficient of thermal expansion with the chip lead to thermal stress under high-power operation, causing encapsulation layer cracking or internal quantum dot (QD) thermal quenching. To improve thermal management, existing technologies attempt to introduce porous structures to reduce the refractive index and provide thermal insulation. Although these structures possess good thermal insulation and low refractive index properties, existing porous encapsulation materials are prone to pore structure collapse during the high-temperature manufacturing process of Micro LEDs. Furthermore, the refractive index difference between the pores and the substrate often leads to severe light scattering, making it difficult to simultaneously achieve high light transmittance, low effective refractive index, and high-temperature mechanical structural stability. Therefore, there is an urgent need to develop an encapsulation film that can maintain the stability of the micropore structure at high temperatures while simultaneously achieving synergistic optimization of optical and thermal management performance. Summary of the Invention

[0003] The main objective of this invention is to provide an encapsulating adhesive composition for optoelectronic device packaging, as well as a porous hybrid encapsulating film layer with high thermal stability and high light yield for optoelectronic device packaging and its preparation method, so as to overcome the shortcomings of the prior art.

[0004] Another object of the present invention is to provide the application of the porous hybrid encapsulation film layer.

[0005] To achieve the above-mentioned objectives, the present invention adopts the following technical solution: This invention provides an encapsulating adhesive composition for optoelectronic device packaging, comprising: a transparent polymer precursor, a POSS structure reinforcing component having reactive functional groups matching the polymer precursor, and a photofunctional porous phase that releases volatile components upon heating, wherein the difference between the refractive index of the photofunctional porous phase and the refractive index of the cured transparent polymer precursor is ≤0.05.

[0006] This invention also provides a porous hybrid encapsulation film layer for optoelectronic device packaging, comprising: Transparent polymer matrix; And a nano-hybrid network formed by crosslinking of a POSS structure reinforcing component with reactive functional groups dispersed and embedded in the transparent polymer matrix; the nano-hybrid network has a disordered interconnected pore structure distributed inside, and the pore walls of the disordered interconnected pore structure are supported by rigid chain segments containing the POSS structure reinforcing component. The disordered interconnected pore structure is induced to form in the glassy state of the nano-hybrid network during the release of volatile components from the photofunctional porous phase.

[0007] This invention also provides a method for preparing a porous hybrid encapsulation film for optoelectronic device packaging, comprising: The aforementioned encapsulating adhesive composition for optoelectronic device packaging is applied to the surface of the optoelectronic device chip array; The coated encapsulating adhesive composition is pre-crosslinked to form a nano-hybrid network framework; The temperature is then raised for heat treatment, causing the photofunctional porous phase to release volatile components, thereby forming a disordered interconnected pore structure within the nano-hybrid network framework, resulting in a porous hybrid encapsulation film.

[0008] This invention also provides the application of the porous hybrid encapsulation film layer for optoelectronic device packaging in the field of optoelectronic device packaging.

[0009] Compared with the prior art, the beneficial effects of the present invention are at least as follows: The porous hybrid encapsulation film provided by this invention constructs a continuous cross-linked network by reinforcing components with reactive functional groups in a POSS structure. Combined with a refractive index-matched photofunctional pore-forming phase and an in-situ confined pore-forming process, it achieves synergistic effects of multiple technologies: First, the continuous nano-hybrid network provides high-temperature rigid support for the porous structure, solving the reliability problem of porous encapsulation layers being prone to collapse and cracking during high-temperature processes such as reflow soldering. The film maintains its pore morphology unchanged after a 260 °C reflow soldering process, with no visible shrinkage. Second, the strict refractive index matching and nanoscale disordered interconnected pore design reduce the effective refractive index of the film to improve light extraction efficiency while maximally suppressing light scattering and maintaining high transmittance, thereby improving the light extraction efficiency of optoelectronic devices by more than 15%. Third, the synergistic effect of the porous structure and the nano-hybrid network effectively buffers the thermal stress between the chip and the encapsulation layer and reduces heat diffusion to non-light-emitting areas, lowering the chip's operating center temperature by 5-10 °C and improving the device's thermal management and long-term operational stability. Detailed Implementation

[0010] Given the problems of existing porous encapsulation materials being prone to collapse during high-temperature processes and the difficulty in simultaneously achieving high light transmittance and thermal management performance, the inventors of this invention, through long-term research and extensive practice, have proposed the technical solution of this invention. This invention mainly proposes a porous hybrid film layer, an encapsulating adhesive composition, and a preparation method for optoelectronic device encapsulation, achieving a synergistic improvement in the optical performance, thermal stability, and mechanical reliability of the encapsulation layer. Based on the construction of a hybrid network using POSS structure reinforcement components to achieve glassy confined pore formation, this invention further optimizes the refractive index matching between the POSS structure reinforcement components and the polymer matrix, and controls the porosity distribution, achieving a synergistic effect between the optical and thermal management performance of the encapsulation layer. Although existing technologies propose introducing rigid components to lock the polymer network to achieve confined pore formation, in specific fields such as optoelectronic device encapsulation, simple structural locking cannot meet the special requirements of optical coupling efficiency, high light transmittance, and chip-level thermal stress matching.

[0011] The technical solution of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0012] Specifically, as one aspect of the technical solution of the present invention, an encapsulating adhesive composition for optoelectronic device packaging includes: a transparent polymer precursor, a POSS structure reinforcing component having reactive functional groups that match the polymer precursor, and a photofunctional porous phase that releases volatile components upon heating, wherein the difference between the refractive index of the photofunctional porous phase and the refractive index of the cured transparent polymer precursor is ≤0.05.

[0013] The encapsulating adhesive composition of the present invention serves as a precursor material for preparing porous hybrid films. By pre-matching the refractive indices of the pore-forming phase and the cured substrate, and combining it with reactive POSS structure-enhancing components, it ensures that optically uniform and structurally stable porous hybrid films can be formed in situ during subsequent coating, curing, and pore-forming processes, exhibiting good process adaptability and storage stability.

[0014] In some embodiments, the transparent polymer precursor may include, but is not limited to, one or more of acrylates, silicones, or modified systems thereof that have high light transmittance.

[0015] In some preferred embodiments, the transparent polymer precursor may include, but is not limited to, one or more of vinyl-terminated polydimethylsiloxane, hydrogen-containing polysiloxane, alkoxysilane-modified acrylate, etc.

[0016] In some embodiments, the POSS structure-reinforcing component (polyhedral oligomeric silsesquioxane) has the structural formula (RSiO). 1.5 ) n Where n is 6 to 12, specifically 6, 8, 10, or 12 (most commonly a cage-like structure with n=8). Furthermore, to ensure that the POSS structure-enhancing component can participate in network construction, the POSS structure-enhancing component contains reactive functional groups, which may include one or more combinations of acryloyloxy, methacryloxy, vinyl, etc.

[0017] In some embodiments, the photofunctional pore-forming phase is an organic compound that can release volatile components at 120~250 °C, specifically including one or more combinations of small molecule thermally degradable pore-forming agents, pyrolytic block copolymers, etc., but not limited to this.

[0018] In some preferred embodiments, the photofunctional porous phase may include azobisisobutyronitrile (AIBN), ammonium bicarbonate, and number-average molecular weight (NMR) () is one or more of the following: polydiethylene glycol esters of 1000-5000, modified ester compounds that are easily volatile when heated, but not limited to these.

[0019] Furthermore, the modified ester compound may include one or more combinations of triethyl citrate, acetyl tributyl citrate, diethyl oxalate, and dimethyl succinate, but is not limited thereto.

[0020] In some embodiments, the encapsulating adhesive composition contains 60-80 wt% of a transparent polymer precursor, 5-15 wt% of a POSS structure-reinforcing component, and 10-30 wt% of a photofunctional pore-forming phase. This invention defines the weight ratio of each core component in the encapsulating adhesive composition, and this ratio range corresponds to the component content of the final film layer, ensuring that after the pore-forming agent evaporates, the remaining solid components can still maintain the integrity of the continuous hybrid network and the stability of optical properties.

[0021] In some preferred embodiments, the encapsulating adhesive composition further includes quantum dot phosphor, the quantum dot phosphor being 0.5 to 10% of the mass of the transparent polymer precursor.

[0022] As another aspect of the technical solution of the present invention, it also relates to a porous hybrid encapsulation film layer for optoelectronic device packaging, comprising: Transparent polymer matrix; And a nano-hybrid network formed by crosslinking of a POSS structure reinforcing component with reactive functional groups dispersed and embedded in the transparent polymer matrix; the nano-hybrid network has a disordered interconnected pore structure distributed inside, and the pore walls of the disordered interconnected pore structure are supported by rigid chain segments containing the POSS structure reinforcing component. The disordered interconnected pore structure is induced to form in the glassy state of the nano-hybrid network during the release of volatile components from the photofunctional porous phase.

[0023] The above-mentioned solution of the present invention uses a POSS structure with reactive functional groups to reinforce the crosslinking and construct a continuous hybrid network, providing a rigid skeleton support for the film layer at high temperature and preventing the collapse of the interconnecting pores during the thermal process. At the same time, by limiting the refractive index matching relationship between the thermally volatile pore-forming agent and the transparent polymer matrix, the interfacial light scattering caused by the introduction of pores is suppressed from the source, thereby maintaining high light transmittance while ensuring a low effective refractive index, and solving the problem of the difficulty in balancing the optical and mechanical properties of porous structures.

[0024] In some embodiments, the POSS structure-reinforcing component participates in the construction of the nano-hybrid network as a rigid crosslinking node. This invention selects the POSS structure-reinforcing component as the rigid nano-hybrid component; its unique cage-like inorganic-organic hybrid structure enhances the rigidity and thermal stability of the network at the molecular scale. Reactive functional groups such as acryloyloxy or vinyl groups ensure that the POSS can be chemically bonded into the polymer network, rather than simply physically filled, thereby avoiding inorganic particle agglomeration and interface defects. The acrylate or silicone matrix provides a basis for excellent optical transparency and weather resistance.

[0025] Furthermore, the types of the POSS structure-enhancing components are as described above and will not be repeated here.

[0026] In some embodiments, the aperture of the disordered interconnected hole structure is 10~100nm. Compared with closed or ordered holes, this disordered interconnected hole network is more conducive to isotropic stress release and thermal expansion buffering; the aperture range is much smaller than the wavelength of visible light, which further reduces light scattering loss, and the small aperture combined with the continuous hybrid network significantly improves the crack propagation resistance of the film.

[0027] In some embodiments, the porosity of the porous hybrid encapsulation film is 20% or more, preferably 30-50%. This invention reduces the refractive index by adjusting the porosity, thereby increasing the light extraction efficiency of Micro LEDs by more than 15%.

[0028] In some implementations, the thickness of the porous hybrid encapsulation film is 1~50µm.

[0029] In some embodiments, due to the introduction of disordered interconnected hole structures, the effective refractive index of the porous hybrid encapsulation film is 1.20~1.40. This invention, by controlling the effective refractive index within the low refractive index range of 1.20 to 1.40, can significantly reduce total internal reflection losses at the light-emitting interface of the Micro LED chip and improve light extraction efficiency. This refractive index range is the result of the synergistic effect of the matching degree between the porosity of the interconnected holes and the refractive index of the substrate, ensuring both optical gain and avoiding mechanical strength degradation caused by excessive porosity.

[0030] In some implementations, the introduction of the POSS structure-enhancing component enables the porous hybrid encapsulation film to maintain its pore morphology after a 260 °C reflow soldering process, with no visible shrinkage.

[0031] In some implementations, the porous hybrid encapsulation film layer is also uniformly dispersed with quantum dot phosphors.

[0032] In some embodiments, the porous structure in the porous hybrid packaging film of the present invention significantly reduces heat diffusion to the surrounding non-light-emitting areas, thereby reducing the chip operating center temperature by 5-10 °C.

[0033] This invention directly integrates quantum dot phosphors into a porous hybrid film, utilizing the low thermal conductivity of the porous structure to reduce heat transfer to the quantum dots and alleviate the thermal quenching effect. At the same time, the low refractive index film environment helps to improve the light extraction efficiency of the quantum dots, achieving synergy between color conversion and light management.

[0034] In summary, the nano-hybrid network formed by the POSS structure enhancement components of this invention, in synergy with the interconnecting hole structure, can absorb the thermal expansion stress during chip operation and prevent the encapsulation layer from peeling off.

[0035] As another aspect of the technical solution of the present invention, it also relates to a method for preparing the porous hybrid encapsulation film layer for optoelectronic device packaging, comprising the following steps: The aforementioned encapsulating adhesive composition for optoelectronic device packaging is applied to the surface of the optoelectronic device chip array; The coated encapsulating adhesive composition is pre-crosslinked to form a nano-hybrid network framework; The material is then heated to allow it to release volatile components from the photofunctional porous phase, thereby forming a disordered interconnected pore structure within the nano-hybrid network framework, resulting in a porous hybrid encapsulation film.

[0036] The above preparation method constructs a preliminary POSS hybrid framework through photopolymerization, followed by in-situ confined pore formation. Specifically, during the controlled heating process, the rigid support of the POSS framework is used to allow the pore-forming phase to release gas under glassy conditions, forming a non-collapsed interconnected pore network. This effectively avoids the collapse and merging of the pore structure caused by polymer softening during the traditional thermally induced pore process, ensuring the precise controllability of the final film microstructure.

[0037] In some embodiments, the pre-crosslinking treatment is a UV curing treatment, which can achieve rapid, low-temperature pre-locking of the skeleton. Further, the UV wavelength is 300–400 nm, the irradiation intensity is 20–150 mW / cm², and the time is 30–120 s.

[0038] In some embodiments, the heat treatment is a staged heating heat treatment, specifically including first holding at 120~150 °C for 0.5~2 h to initiate pore formation, and then heating to 180~250 °C and holding for 0.5~2 h for final network curing. The temperature range of 120 °C~250 °C covers the decomposition / volatilization temperature range of most pore-forming phases, while being lower than the thermal decomposition temperature of the hybrid network; in particular, setting a holding-volatilization stage near the glass transition temperature utilizes the physical state where polymer chain segment movement is frozen while the free volume still allows small molecule diffusion.

[0039] As another aspect of the technical solution of the present invention, it also relates to the application of the porous hybrid encapsulation film layer for optoelectronic device packaging in the field of optoelectronic device packaging.

[0040] Furthermore, the optoelectronic device includes, but is not limited to, Micro LEDs.

[0041] By employing the above technical solution, the present invention achieves "in-situ locking" of micro-channels during the pore-forming process through the rigid network pre-constructed by the POSS structure reinforcement component, thereby solving the structural failure problem of ultra-thin encapsulation layers at high temperatures.

[0042] The technical solution of the present invention will be further described in detail below through specific embodiments. Experimental methods in the following embodiments that do not specify specific conditions are generally performed under conventional conditions or according to the conditions recommended by the manufacturer. Unless otherwise specified, the experimental materials used in the embodiments below can be purchased from conventional biochemical reagent companies.

[0043] The POSS-induced confined pore formation process of this invention follows the polymer system at T g The microporous mechanism is similar to that of nearby micro-LEDs, but the following embodiments specifically use POSS of the methacryloyl or acrylic type with a specific refractive index to adapt to the light emission requirements of Micro LEDs.

[0044] Example 1 (1) The raw material composition and ratio of the encapsulating adhesive composition are: 70wt% acrylate, 10wt% MAP-POSS (methacryloyloxy polyhedral oligomeric silsesquioxane), 10wt% azobisisobutyronitrile (AIBN), and red CdSe / ZnS quantum dots (average particle size 10 nm, accounting for 10wt% of the polymer precursor).

[0045] (2) The preparation methods of porous hybrid encapsulation films include: The encapsulating adhesive composition from step (1) is coated onto the surface of the Micro LED chip array; The coated encapsulant composition was subjected to ultraviolet curing treatment at a wavelength of 365 nm, a radiation intensity of 50 mW / cm², and an irradiation time of 60 s. Then, heat treatment is performed by heating at 2 °C / min to 140 °C and holding for 1 h (initiating pore formation), and then heating to 200 °C for 1 h to cure, so that the photofunctional porous phase releases volatile components, thereby forming a disordered interconnected pore structure in the nano-hybrid network framework, and obtaining a porous hybrid encapsulation film.

[0046] The porous hybrid encapsulation film has a thickness of 5 μm, a transmittance of 92% at 450 nm, a porosity of 35%, an effective refractive index of 1.32, and maintains its pore morphology unchanged after a 260 °C reflow soldering process with no visible shrinkage.

[0047] Reliability testing: After 1000 hours of high-power aging test, the encapsulated Micro LED showed no cracking of the encapsulation film, and the quantum dot fluorescence intensity retention rate (PL) was 95% of the initial value.

[0048] Example 2 (1) The raw material composition and ratio of the encapsulating adhesive composition are as follows: 60wt% vinyl-terminated polydimethylsiloxane, 5wt% hydrogen-containing polysiloxane, 15wt% vinyl POSS, 20wt% polydiglycol with a number average molecular weight of 3000, and perovskite quantum dot phosphor (CsPbBr3) is added, accounting for 1% of the polymer precursor.

[0049] (2) The preparation methods of porous hybrid encapsulation films include: The encapsulating adhesive composition from step (1) is coated onto the surface of the Micro LED chip array; The coated encapsulant composition was subjected to ultraviolet curing treatment at a wavelength of 365 nm, a radiation intensity of 80 mW / cm², and an irradiation time of 90 s. Then, heat treatment is performed by heating at 2 °C / min to 150 °C and holding for 1.5 h (initiating pore formation), and then heating to 220 °C for 2 h to cure, so that the photofunctional porous phase releases volatile components, thereby forming a disordered interconnected pore structure in the nano-hybrid network framework, and obtaining a porous hybrid encapsulation film.

[0050] The porous hybrid encapsulation film has a thickness of 4 μm, a transmittance of 90% at 450 nm (excluding quantum dot absorption), a porosity of 48%, an effective refractive index of 1.23, and maintains its pore morphology unchanged after a 260 °C reflow soldering process with no visible shrinkage.

[0051] Reliability testing: After 1000 hours of high-power aging test, the encapsulated Micro LED showed no cracking of the encapsulation film, and the quantum dot fluorescence intensity retention rate (PL) was 93% of the initial value.

[0052] Example 3 (1) The raw material composition and ratio of the encapsulating adhesive composition are: 80wt% alkoxysilane modified acrylate, 5wt% MAP-POSS, and 15wt% ammonium bicarbonate.

[0053] (2) The preparation methods of porous hybrid encapsulation films include: The encapsulating adhesive composition from step (1) is coated onto the surface of the Micro LED chip array; The coated encapsulant composition was subjected to ultraviolet curing treatment at a wavelength of 395 nm, a radiation intensity of 100 mW / cm², and an irradiation time of 45 s. Then, heat treatment is performed by heating at 2 °C / min to 120 °C and holding for 2 h (initiating pore formation), and then heating to 180 °C for 1 h to cure, so that the photofunctional porous phase releases volatile components, thereby forming a disordered interconnected pore structure in the nano-hybrid network framework, and obtaining a porous hybrid encapsulation film.

[0054] The porous hybrid encapsulation film has a thickness of 3 μm, a transmittance of 94% at 450 nm, a porosity of 22%, an effective refractive index of 1.39, and maintains its pore morphology unchanged after a 260 °C reflow soldering process with no visible shrinkage.

[0055] Reliability testing: After 1000 hours of high-power aging test, the encapsulated Micro LED showed no cracking of the encapsulation film, and the quantum dot fluorescence intensity retention rate (PL) was 96% of the initial value.

[0056] Example 4 (1) The raw material composition and ratio of the encapsulating adhesive composition are: 60wt% acrylate, 10wt% MAP-POSS (methacryloyloxy polyhedral oligomeric silsesquioxane), 30wt% azobisisobutyronitrile (AIBN), and red CdSe / ZnS quantum dots (accounting for 5wt% of the polymer precursor).

[0057] (2) The preparation methods of porous hybrid encapsulation films include: The encapsulating adhesive composition from step (1) is coated onto the surface of the Micro LED chip array; The coated encapsulant composition was subjected to ultraviolet curing treatment at a wavelength of 300 nm, a radiation intensity of 150 mW / cm², and an irradiation time of 120 s. Then, heat treatment is performed by heating at 2 °C / min to 150 °C and holding for 0.5 h (initiating pore formation), and then heating to 250 °C for curing for 0.5 h, so that the photofunctional porous phase releases volatile components, thereby forming a disordered interconnected pore structure in the nano-hybrid network framework, and obtaining a porous hybrid encapsulation film.

[0058] Tests showed that the performance of the porous hybrid encapsulation film layer in this embodiment is basically the same as that in Embodiment 1.

[0059] Comparative Example 1 The difference between this comparative example and Example 1 is that ordinary inorganic nano-silica (SiO2) is used instead of MAP-POSS.

[0060] The results showed that although the modulus was improved, cracks appeared on the film surface during the pore-forming heat treatment because SiO2 could not form a continuous cross-linked network, and the pore structure distribution was extremely uneven, resulting in a significantly worse light emission uniformity than in Example 1.

[0061] Reliability testing: After 1000 hours of high-power aging test, the packaged Micro LEDs retained 62% of their initial quantum dot fluorescence intensity (PL).

[0062] Comparative Example 2 The only difference between this comparative example and Example 1 is that the amount of MAP-POSS was adjusted to 3 wt%.

[0063] The effective refractive index of the porous hybrid encapsulation film is 1.48. After 1000 hours of high-power aging test, cracks appeared on the surface of the film after the encapsulated Micro LED was tested, and the quantum dot fluorescence intensity retention rate (PL) was 70% of the initial value.

[0064] Comparative Example 3 The only difference between this comparative example and Example 1 is that the amount of MAP-POSS was adjusted to 20 wt%.

[0065] The effective refractive index of the porous hybrid encapsulation film is 1.34. After 1000 hours of high-power aging test, cracks appeared on the surface of the film after the encapsulated Micro LED was tested, and the quantum dot fluorescence intensity retention rate (PL) was 55% of the initial value.

[0066] In addition, the inventors of this case also conducted experiments with other raw materials, process operations, and process conditions described in this specification, referring to the aforementioned embodiments, and obtained relatively ideal results in all cases.

[0067] The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement it accordingly. They should not be construed as limiting the scope of protection of the present invention. All equivalent changes or modifications made in accordance with the spirit and essence of the present invention should be covered within the scope of protection of the present invention.

Claims

1. An encapsulating adhesive composition for encapsulating optoelectronic devices, characterized in that, include: The transparent polymer precursor, the POSS structure reinforcing component having reactive functional groups that match the polymer precursor, and the photofunctional porous phase that releases volatile components upon heating, wherein the difference between the refractive index of the photofunctional porous phase and the refractive index of the cured transparent polymer precursor is ≤0.

05.

2. The encapsulating adhesive composition according to claim 1, characterized in that: The transparent polymer precursor includes one or more combinations of acrylates, organosilicones, or modified systems thereof.

3. The encapsulating adhesive composition according to claim 2, characterized in that: The transparent polymer precursor includes one or more of vinyl-terminated polydimethylsiloxane, hydrogen-containing polysiloxane, and alkoxysilane-modified acrylate.

4. The encapsulating adhesive composition according to claim 1, characterized in that: The structural formula of the POSS structure-enhancing component is (RSiO 1.5 ) n Where n is 6 to 12; the POSS structure reinforcing component contains reactive functional groups, which include one or more combinations of acryloyloxy, methacryloxy, and vinyl groups.

5. The encapsulating adhesive composition according to claim 1, characterized in that: The photofunctional pore-forming phase includes one or more combinations of small molecule thermally degradable pore-forming agents and pyrolytic block copolymers.

6. The encapsulating adhesive composition according to claim 5, characterized in that: The photofunctional porous phase includes one or more of azobisisobutyronitrile, ammonium bicarbonate, polydiethylene glycol ester with a number average molecular weight of 1000-5000, and modified ester compounds, wherein the modified ester compounds include one or more of triethyl citrate, acetyl tributyl citrate, diethyl oxalate, and dimethyl succinate.

7. The encapsulating adhesive composition according to claim 1, characterized in that: The encapsulating adhesive composition contains 60-80 wt% transparent polymer precursor, 5-15 wt% POSS structure reinforcing component, and 10-30 wt% photofunctional porous phase. And / or, the encapsulating adhesive composition further includes quantum dot phosphor, the quantum dot phosphor being 0.5 to 10% of the mass of the transparent polymer precursor.

8. A porous hybrid encapsulation film layer for packaging optoelectronic devices, characterized in that, include: Transparent polymer matrix; And a nano-hybrid network formed by crosslinking of POSS structure reinforcing components with reactive functional groups dispersed and embedded in the transparent polymer matrix; The nano-hybrid network contains disordered interconnected pore structures, and the pore walls of the disordered interconnected pore structures are supported by rigid chain segments containing the POSS structure reinforcing components. The disordered interconnected pore structure is induced to form in the glassy state of the nano-hybrid network during the release of volatile components from the photofunctional porous phase.

9. The porous hybrid encapsulation film layer according to claim 8, characterized in that: The POSS structure reinforcement component participates in the construction of the nano-hybrid network as a rigid cross-linking node. And / or, the structural formula of the POSS structure-enhancing component is (RSiO 1.5 ) n Where n is 6 to 12; the POSS structure reinforcing component contains reactive functional groups, which include one or more combinations of acryloyloxy, methacryloxy, and vinyl groups.

10. The porous hybrid encapsulation film layer according to claim 8, characterized in that: The aperture of the disordered interconnected hole structure is 10~100nm; And / or, the porosity of the porous hybrid encapsulation film layer is 20% or more; The thickness of the porous hybrid encapsulation film is 1~50µm.

11. The porous hybrid encapsulation film layer according to claim 8, characterized in that: The porosity of the porous hybrid encapsulation film is 30-50%; And / or, the effective refractive index of the porous hybrid encapsulation film is 1.20~1.40; And / or, the porous hybrid encapsulation film layer can maintain the pore morphology unchanged after a 260 °C reflow soldering process, with no visible shrinkage; And / or, the porous hybrid encapsulation film layer is also uniformly dispersed with quantum dot phosphors.

12. A method for preparing a porous hybrid encapsulation film layer for optoelectronic device packaging, characterized in that, include: The encapsulating adhesive composition for optoelectronic device encapsulation as described in any one of claims 1 to 7 is coated onto the surface of the optoelectronic device chip array; The coated encapsulating adhesive composition is pre-crosslinked to form a nano-hybrid network framework; The material is then heated to allow it to release volatile components from the photofunctional porous phase, thereby forming a disordered interconnected pore structure within the nano-hybrid network framework, resulting in a porous hybrid encapsulation film.

13. The preparation method according to claim 12, characterized in that: The pre-crosslinking treatment is a UV curing treatment with a UV wavelength of 300~400 nm, an irradiation intensity of 20~150 mW / cm², and a time of 30~120 s; And / or, the heat treatment is a segmented heating heat treatment, including first holding at 120~150 ℃ for 0.5~2 h, and then raising the temperature to 180~250 ℃ and holding for 0.5~2 h.