A perovskite thin film in-situ conversion reaction device of gas phase assisted ion exchange

Abstract

The application provides a perovskite thin film in-situ conversion reaction equipment for gas phase assisted ion exchange, and relates to the technical field of perovskite solar cell production, which comprises a tubular furnace and an atmosphere supply system. The tubular furnace has a reaction cavity, an air inlet end and an air outlet end which are communicated with the reaction cavity. The reaction cavity comprises a high-temperature zone and a low-temperature zone. The high-temperature zone is closer to the air inlet end than the low-temperature zone. The high-temperature zone is used for heating and evaporating FA / MA powder into FA / MA vapor. The low-temperature zone is used for arranging a substrate. The atmosphere supply system comprises an inert gas source tank and a mixing assembly. The inert gas source tank is connected with the air inlet end to supply an inert gas flow to the reaction cavity. The mixing assembly is arranged in the reaction cavity and is used for mixing the inert gas flow and the FA / MA vapor. The inert gas flow drives the FA / MA vapor to flow to the substrate, so that the gasified FA / MA is deposited on the substrate to form a perovskite thin film. The application can make the gasified FA / MA uniformly deposited on the substrate to form a perovskite thin film through gas phase molecular diffusion, so as to obtain a high-purity, high-crystallinity alpha-phase perovskite.

Description

Technical Field

[0001] This invention relates to the field of perovskite solar cell production technology, and in particular to a gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction device. Background Technology

[0002] Perovskite solar cells offer advantages such as high photoelectric conversion efficiency, low cost, and simple fabrication processes. They are typically formed by sequentially depositing an electron transport layer, a perovskite light-absorbing thin film, a hole transport layer, and a top electrode onto a conductive glass substrate. The quality of the perovskite light-absorbing thin film is a crucial factor limiting cell efficiency, improving stability, and even enabling large-scale applications. In related technologies, the conversion of two-dimensional perovskite to three-dimensional α-FAPbI3 (formamidinium lead triiodide) often employs a solution method. However, the solution method frequently encounters the following problems in practical applications:

[0003] 1. Uneven solution soaking results in poor reproducibility of large-area perovskite film preparation; 2. The reaction time is long, and a large amount of waste liquid is generated; 3. It easily introduces impurities, resulting in numerous defects in the finished perovskite thin film; 4. The transformed phase has low purity and is prone to the formation of the δ phase. Summary of the Invention

[0004] The present invention aims to at least partially solve one of the technical problems in the related art.

[0005] Therefore, embodiments of the present invention propose a gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction device. This gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction device can achieve uniform deposition of vaporized FA / MA on the substrate through gas phase molecular diffusion to form a perovskite thin film, so as to obtain high-purity, high-crystallinity α-phase perovskite.

[0006] An in-situ conversion reaction apparatus for perovskite thin films using gas-phase assisted ion exchange according to an embodiment of the present invention includes a tubular furnace and an atmosphere supply system. The tubular furnace has a reaction chamber and an inlet and an outlet communicating with the reaction chamber. The reaction chamber includes a high-temperature zone and a low-temperature zone, with the high-temperature zone being closer to the inlet than the low-temperature zone. The high-temperature zone is used to heat and evaporate FA / MA powder into FA / MA vapor, and the low-temperature zone is used to arrange a substrate. The atmosphere supply system includes an inert gas source tank and a mixing component. The inert gas source tank is connected to the inlet to supply an inert gas flow to the reaction chamber. The mixing component is disposed in the reaction chamber and is used to mix the inert gas flow and the FA / MA vapor, so that the inert gas flow carries the FA / MA vapor to the substrate, thereby causing the vaporized FA / MA to be deposited on the substrate to form a perovskite thin film.

[0007] According to an embodiment of the present invention, the gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction device supplies an inert gas stream to the reaction chamber through an inert gas source tank. FA / MA powder is heated and evaporated in a high-temperature zone, and the vaporized FA / MA flows towards the substrate in a low-temperature zone under the action of the inert gas stream as a carrier gas. During this process, a mixing component mixes the inert gas stream and the FA / MA vapor to ensure that the FA / MA contained in the mixed gas stream flowing towards the substrate is substantially uniform. Therefore, compared with related technologies, the present invention can achieve uniform deposition of vaporized FA / MA on the substrate through gas phase molecular diffusion to form a perovskite thin film, thereby obtaining a high-purity, high-crystallinity α-phase perovskite.

[0008] In some embodiments, the mixing assembly includes a flow guide shroud, a gas guide pipe, and swirl vanes. The flow guide shroud and the gas guide pipe are in communication with each other. One end of the flow guide shroud facing away from the gas guide pipe forms a sealed chamber between the high-temperature zone and the inner wall of the tubular furnace, and the FA / MA powder is located in the sealed chamber. The swirl vanes are connected between the tubular furnace and the gas guide pipe. The swirl vanes, the gas guide pipe, and the tubular furnace together constitute a mixing channel. The mixing channel is in communication with the reaction chamber along the axial direction of the tubular furnace. The swirl vanes have a flow splitting channel and are provided with a first nozzle connecting the flow splitting channel and the mixing channel. One end of the gas guide pipe facing away from the flow guide shroud is in communication with the flow splitting channel.

[0009] In some embodiments, the swirl blade has a first wall surface and a second wall surface arranged opposite to each other in its thickness direction, and both the first wall surface and the second wall surface are provided with the first nozzle; The first nozzles on the first wall and the first nozzles on the second wall are arranged at intervals along the axial direction of the tubular furnace.

[0010] In some embodiments, at least one of the first wall surface and the second wall surface has a plurality of first nozzles arranged at intervals along a first direction, the first direction being angularly arranged relative to the axial direction of the tubular furnace.

[0011] In some embodiments, the swirl blades are multiple and arranged at circumferential intervals along the gas guide pipe. Any two adjacent swirl blades, the gas guide pipe, and the tubular furnace form a mixing channel. The first nozzle on the first wall of one swirl blade and the first nozzle on the second wall of another swirl blade are located in the same mixing channel.

[0012] In some embodiments, the atmosphere supply system further includes a gas distribution box, which is configured to cooperate with the reaction chamber. The gas distribution box is closer to the air inlet end than the high-temperature zone. The inert gas source tank, the air inlet end, and the gas distribution box are connected in sequence. The side of the gas distribution box facing the exhaust end is provided with a second nozzle. There are multiple second nozzles arranged in an array on the gas distribution box.

[0013] In some embodiments, the atmosphere supply system further includes a flow controller disposed between the inert gas source tank and the gas inlet, the flow controller being used to control at least one parameter of the flow rate and mass of the inert gas supplied to the reaction chamber.

[0014] In some embodiments, the tubular furnace includes two heating sections spaced apart along the axial direction of the tubular furnace, and the reaction chamber forms the high-temperature zone or the low-temperature zone at the heating section; The reaction equipment also includes a temperature-controlled heating unit, which includes a heating jacket that is fitted over the heating section and can adjust the temperature of the heating section.

[0015] In some embodiments, the tubular furnace further includes a non-heating section connected to the heating section and both arranged along the axial direction of the tubular furnace. The non-heating section is provided with an insulating coating, or the non-heating section is made of an insulating material.

[0016] In some embodiments, the reaction apparatus further includes an exhaust gas treatment box, which is connected to the exhaust end to treat the exhaust gas generated in the reaction chamber.

[0017] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a perovskite thin film in-situ conversion reaction device for gas-phase assisted ion exchange according to an embodiment of the present invention.

[0019] Figure 2 This is a schematic diagram of the connection structure of the gas guide pipe and the swirl vanes in a perovskite thin film in-situ conversion reaction device for gas-phase assisted ion exchange according to an embodiment of the present invention.

[0020] Figure label: 1. Tube furnace; 11. Reaction chamber; 111. High-temperature zone; 112. Low-temperature zone; 12. Gas inlet; 13. Gas outlet; 14. Quartz boat; 15. Base; 16. Vacuum pump; 17. Heating section; 18. Non-heating section; 2. Atmosphere supply system; 21. Inert gas source tank; 22. Mixing assembly; 221. Flow guide; 222. Gas guide pipe; 223. Swirl vane; 2231. Flow distribution channel; 2232. First nozzle; 2233. First wall surface; 2234. Second wall surface; 224. Sealed chamber; 23. Gas distribution box; 231. Second nozzle; 24. Flow controller; 3. Temperature-controlled heating unit; 31. Heating jacket; 32. Temperature sensing element; 33. Controller; 4. Exhaust gas treatment box. Detailed Implementation

[0021] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0022] like Figure 1 As shown in the figure, an in-situ conversion reaction apparatus for perovskite thin films using gas-phase assisted ion exchange according to an embodiment of the present invention includes a tubular furnace 1 and an atmosphere supply system 2. The tubular furnace 1 has a reaction chamber 11 and an inlet end 12 and an exhaust end 13 connected to the reaction chamber 11. The reaction chamber 11 includes a high-temperature zone 111 and a low-temperature zone 112. The high-temperature zone 111 is closer to the inlet end 12 than the low-temperature zone 112. The high-temperature zone 111 is used to heat and evaporate FA / MA powder into FA / MA vapor, wherein FA / MA is formamidinium / methylamine. The low-temperature zone 112 is used to arrange the substrate. The atmosphere supply system 2 includes an inert gas source tank 21 and a mixing component 22. The inert gas source tank 21 is connected to the inlet end 12 to supply an inert gas flow to the reaction chamber 11. The mixing component 22 is disposed in the reaction chamber 11 and is used to mix the inert gas flow and the FA / MA vapor, so that the inert gas flow carries the FA / MA vapor to the substrate, thereby causing the vaporized FA / MA to be deposited on the substrate to form a perovskite thin film.

[0023] According to an embodiment of the present invention, the gas-assisted ion exchange perovskite thin film in-situ conversion reaction device supplies an inert gas stream to the reaction chamber 11 via an inert gas source tank 21 through an inlet end 12. FA / MA powder is heated and evaporated in the high-temperature zone 111, and the vaporized FA / MA flows towards the substrate in the low-temperature zone 112 under the action of the inert gas stream as a carrier gas. During this process, the mixing component 22 mixes the inert gas stream and the FA / MA vapor to ensure that the FA / MA contained in the mixed gas stream flowing towards the substrate is basically uniform. Therefore, compared with related technologies, the present invention can uniformly deposit the vaporized FA / MA onto the substrate to form a perovskite thin film through gas phase molecular diffusion, thereby obtaining a high-purity, high-crystallinity α-phase perovskite.

[0024] Specifically, the inner cavity of the tube of the tubular furnace 1 is the reaction chamber 11. The tube of the tubular furnace 1 can be made of a transparent material to facilitate in-situ online observation and real-time monitoring of the phase change process. For example, the tube of the tubular furnace 1 can be a quartz tube. The inlet end 12 and the outlet end 13 can be the two ends of the tubular furnace 1 arranged opposite each other along its axial direction. In this case, the inert gas flow direction is the axial direction of the tubular furnace 1, which can be the left-right direction as shown in the figure. Then, the inlet end 12 is the left end of the tubular furnace 1 in the figure, and the outlet end 13 is the right end of the tubular furnace 1 in the figure. The high-temperature zone 111 is adjacent to the left end of the tubular furnace 1, and the low-temperature zone 112 is adjacent to the right end of the tubular furnace 1. The high-temperature zone 111 can be equipped with a quartz boat 14 for holding FA / MA powder. The quartz boat 14 can be detachably connected to the tubular furnace 1 to place FA / MA powder or replace and maintain the quartz boat 14. The low-temperature zone 112 can be equipped with a base 15 for placing a substrate. The base 15 can be detachably connected to the tube furnace 1 and the substrate can be arranged orthogonally to the axis of the tube furnace 1. The substrate can be a single-crystal silicon wafer or a glass plate. The substrate is ultrasonically cleaned in acetone, anhydrous ethanol and deionized water, dried, and then placed on the base 15. The inert gas source tank 21 is not limited to an argon tank, a nitrogen tank or a helium tank.

[0025] In addition, the exhaust end 13 can be connected to a vacuum pump 16, which will evacuate the reaction chamber 11 to 0.01Pa-100Pa, and then raise the temperature of the high temperature zone 111 and the low temperature zone 112 from room temperature.

[0026] like Figure 1 and Figure 2 As shown, in some embodiments, the mixing component 22 includes a flow guide 221, a gas guide pipe 222, and a swirl vane 223. The flow guide 221 and the gas guide pipe 222 are connected to each other. The end of the flow guide 221 facing away from the gas guide pipe 222 forms a sealed chamber 224 between the high-temperature zone 111 and the inner wall of the tubular furnace 1. The FA / MA powder is located in the sealed chamber 224. The swirl vane 223 is connected between the tubular furnace 1 and the gas guide pipe 222. The swirl vane 223, the gas guide pipe 222, and the tubular furnace 1 together constitute a mixing channel (not shown in the figure). The mixing channel is connected to the reaction chamber 11 along the axial direction of the tubular furnace 1. The swirl vane 223 has a diversion channel 2231 and is provided with a first nozzle 2232 that connects the diversion channel 2231 and the mixing channel. The end of the gas guide pipe 222 facing away from the flow guide 221 is connected to the diversion channel 2231.

[0027] Understandably, after the high-temperature zone 111 is heated to the set temperature, the FA / MA powder in the sealed chamber 224 gradually vaporizes. The vaporized FA / MA can enter the diversion channel 2231 of the swirl vane 223 through the gas guide pipe 222 from the sealed chamber 224, and then be ejected from the first nozzle 2232. It is fully mixed with the inert gas flow into the reaction chamber 11 in the mixing channel. Due to the structural characteristics of the swirl vane 223, the mixed medium formed by the inert gas and FA / MA vapor can rotate and flow in the mixing channel, thereby further enhancing the mixing effect of the mixed medium. At the same time, it can also accelerate the mixing medium to a certain extent, which is conducive to the uniform deposition of FA / MA on the substrate to form a perovskite film and shorten the film formation time.

[0028] Specifically, the deflector 221 can be located in the high-temperature zone 111 and covered with FA / MA powder, and the deflector 221 can extend in the vertical direction. The air guide pipe 222 can communicate with the top opening of the deflector 221, and the air guide pipe 222 can extend from the air inlet end 12 towards the exhaust end 13 and extend between the high-temperature zone 111 and the low-temperature zone 112. The swirl vane 223 is located between the high-temperature zone 111 and the low-temperature zone 112.

[0029] It should be noted that the swirl blade 223 can adopt the existing technology in the field. The working principle of the swirl blade 223 is that when the axially flowing fluid passes through the inclined and curved blade channel, the blade surface applies a tangential force to the fluid, which can convert part of the axial kinetic energy into tangential (circumferential) velocity, so that the fluid moves forward while rotating, forming a spiral vortex. Therefore, the swirl blade 223 has the effect of enhancing mixing.

[0030] like Figure 2 As shown, in some embodiments, the swirl blade 223 has a first wall surface 2233 and a second wall surface 2234 arranged opposite to each other in its thickness direction. Both the first wall surface 2233 and the second wall surface 2234 are provided with first nozzles 2232. In this case, the FA / MA vapor in the diversion channel 2231 can be sprayed out from both sides of the swirl blade 223 to optimize the uniformity of the mixing amount of inert gas and FA / MA vapor in the mixing medium in the mixing channel.

[0031] The first nozzles 2232 of the first wall surface 2233 and the first nozzles 2232 of the second wall surface 2234 are arranged at intervals along the axial direction of the tubular furnace 1. In other words, on the same projection plane along the axial direction of the tubular furnace 1, there is a gap between the projection center of the first nozzle 2232 of the first wall surface 2233 and the projection center of the first nozzle 2232 of the second wall surface 2234, so that there is a gap between their ejection positions in the mixing channel, ensuring that the inert gas and FA / MA vapor can be fully mixed in the mixing channel.

[0032] like Figure 2As shown, in some embodiments, at least one of the first wall surface 2233 and the second wall surface 2234 has multiple first nozzles 2232 arranged at intervals along a first direction. That is, the first nozzles 2232 of the first wall surface 2233 are multiple and arranged at intervals along the first direction; or, the first nozzles 2232 of the second wall surface 2234 are multiple and arranged at intervals along the first direction; or, the first nozzles 2232 of each of the first wall surface 2233 and the second wall surface 2234 are multiple and arranged at intervals along the first direction, with the first direction arranged at an angle to the axial direction of the tubular furnace 1.

[0033] Understandably, the above structural design can further ensure the uniformity of mixing of inert gas and FA / MA vapor.

[0034] The number of first nozzles 2232 on the first wall surface 2233 and the number of first nozzles 2232 on the second wall surface 2234 can be the same or different, and their arrangement positions in the axial direction of the tube furnace 1 can also be designed and determined according to actual needs, which will not be elaborated here.

[0035] like Figure 2 As shown, in some embodiments, multiple swirl blades 223 are arranged at circumferential intervals along the gas guide pipe 222. Any two adjacent swirl blades 223 form a mixing channel with the gas guide pipe 222 and the tubular furnace 1. The first nozzle 2232 of the first wall surface 2233 of one swirl blade 223 and the first nozzle 2232 of the second wall surface 2234 of another swirl blade 223 are located in the same mixing channel. The swirl directions of two adjacent swirl blades 223 are the same or different.

[0036] Understandably, the arrangement of multiple swirl vanes 223 allows for the formation of multiple mixing channels in the reaction chamber 11, which is beneficial for further improving the mixing effect of inert gas and FA / MA vapor.

[0037] like Figure 1 As shown, in some embodiments, the atmosphere supply system 2 further includes a gas distribution box 23, which is fitted to the reaction chamber 11. The gas distribution box 23 is closer to the air inlet 12 than the high temperature zone 111. The inert gas source tank 21, the air inlet 12 and the gas distribution box 23 are connected in sequence. The side of the gas distribution box 23 facing the exhaust end 13 is provided with a second nozzle 231. There are multiple second nozzles 231 and they are arranged in an array on the gas distribution box 23.

[0038] It is understandable that, based on the above structure, the gas distribution box 23 and the mixing component 22 can form a two-stage gas distribution structure. The gas distribution box 23 is the primary gas distribution structure for the inert gas flow, and the mixing component 22 is the secondary gas distribution structure for the inert gas flow and FA / MA vapor. Under the action of the two-stage gas distribution structure, the content of vaporized FA / MA contained in the mixed medium flow towards the substrate is basically the same everywhere, which is conducive to the uniform deposition of FA / MA on the substrate, so as to form a high-purity, high-crystallinity α-phase perovskite film.

[0039] Specifically, multiple second nozzles 231 can be arranged at equal intervals on the air distribution box 23.

[0040] like Figure 1 As shown, in some embodiments, the atmosphere supply system 2 further includes a flow controller 24, which is located between the inert gas source tank 21 and the inlet end 12. The flow controller 24 is used to control at least one parameter, namely the flow rate and mass, of the inert gas supplied to the reaction chamber 11. The flow controller 24 can be an MFC (Multi-Fuel Controller) to precisely control the flow rate and mass of the inert gas entering the reaction chamber 11, thereby maintaining a stable FA / MA gaseous atmosphere in the reaction chamber 11 with precisely adjustable concentration.

[0041] It should be noted that MFC is a mass flow controller, which can realize precise measurement of gas flow and closed-loop control, thus helping to ensure the stability of atmosphere concentration. The specific structure and working principle of MFC can be described using current technology in this field, and will not be elaborated here.

[0042] like Figure 1 As shown, in some embodiments, the tubular furnace 1 includes a heating section 17, which consists of two sections spaced apart along the axial direction of the tubular furnace 1. The reaction chamber 11 forms a high-temperature zone 111 or a low-temperature zone 112 at the heating section 17.

[0043] The reaction equipment also includes a temperature control heating unit 3, which includes a heating sleeve 31. The heating sleeve 31 is fitted on the heating section 17 and can adjust the temperature of the heating section 17. That is, the heating sleeve 31 is fitted on the outer wall of the furnace tube of the tube furnace 1.

[0044] It is understandable that the heating jacket 31 can heat the heating section 17 so that the temperature range of the heating section 17 is room temperature to 150°C, and the uniformity is within ±1°C.

[0045] Specifically, the temperature control heating unit 3 also includes a temperature detection element 32 and a controller 33. The temperature detection element 32 is installed at the heating section 17 and is used to monitor the temperature at the heating section 17. The temperature detection element 32 can feed back the monitoring data to the controller 33 so that the controller 33 can control the operation of the heating jacket 31 and achieve precise temperature control of the heating section 17. The temperature detection element 32 may be, but is not limited to, a thermocouple, a temperature sensor or a thermometer.

[0046] like Figure 1 As shown, in some embodiments, the tube furnace 1 further includes a non-heating section 18, which is connected to the heating section 17 and the two are arranged along the axial direction of the tube furnace 1. The non-heating section 18 is provided with a heat-insulating coating, or the non-heating section 18 is made of heat-insulating material, so as to ensure the temperature environment of the high-temperature zone 111 and the low-temperature zone 112 in the reaction chamber 11 and reduce the influence of temperature error on the conversion process.

[0047] like Figure 1 As shown, in some embodiments, the reaction apparatus further includes an exhaust gas treatment box 4, which is connected to the exhaust end 13 to treat the exhaust gas generated by the reaction chamber 11 and reduce environmental pollution.

[0048] Specifically, the exhaust end 13 is connected to the tail gas treatment box 4 through the first branch pipe, and the exhaust end 13 is connected to the vacuum pump 16 through the second branch pipe. Valves can be provided on the first branch pipe and the second branch pipe to control the opening and closing of the corresponding branch pipe, so that the reaction equipment can switch between tail gas treatment operation and vacuum treatment operation.

[0049] Therefore, compared with related technologies, the present invention has the following technical advantages: 1) This invention can achieve precise supply and stable concentration control of gaseous atmosphere through an atmosphere supply system; 2) This invention enables in-situ phase conversion of FA / MA through the coordinated control of temperature and flow rate; 3) The entire perovskite film formation process in this invention is solution-free, making it clean and environmentally friendly.

[0050] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0051] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0052] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0053] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0054] In this invention, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0055] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A gas-phase assisted ion exchange perovskite thin-film in-situ conversion reaction device, characterized in that, include: A tube furnace having a reaction chamber and an inlet and an outlet communicating with the reaction chamber, the reaction chamber including a high-temperature zone and a low-temperature zone, the high-temperature zone being closer to the inlet than the low-temperature zone, the high-temperature zone being used to heat and evaporate FA / MA powder into FA / MA vapor, and the low-temperature zone being used to arrange a substrate; An atmosphere supply system is provided, comprising an inert gas source tank and a mixing component. The inert gas source tank is connected to the gas inlet to supply an inert gas flow to the reaction chamber. The mixing component is disposed in the reaction chamber and is used to mix the inert gas flow and the FA / MA vapor, so that the inert gas flow carries the FA / MA vapor to the substrate, thereby causing the vaporized FA / MA to be deposited on the substrate to form a perovskite thin film.

2. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to claim 1, characterized in that, The hybrid component includes: A flow guide hood and a gas guide pipe are connected to each other. One end of the flow guide hood away from the gas guide pipe forms a sealed chamber between the high-temperature zone and the inner wall of the tubular furnace. The FA / MA powder is located in the sealed chamber. A swirl vane is connected between the tubular furnace and the gas guide pipe. The swirl vane, the gas guide pipe, and the tubular furnace together form a mixing channel. The mixing channel is connected to the reaction chamber along the axial direction of the tubular furnace. The swirl vane has a flow-dividing channel and is provided with a first nozzle that connects the flow-dividing channel and the mixing channel. The end of the gas guide pipe facing away from the flow guide shroud is connected to the flow-dividing channel.

3. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to claim 2, characterized in that, The swirl blade has a first wall and a second wall arranged opposite to each other in its thickness direction, and both the first wall and the second wall are provided with the first spray hole; The first nozzles on the first wall and the first nozzles on the second wall are arranged at intervals along the axial direction of the tubular furnace.

4. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction device according to claim 3, characterized in that, The first spray holes of at least one of the first wall surface and the second wall surface are multiple and arranged at intervals along a first direction, which is angular to the axis of the tubular furnace.

5. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to claim 3, characterized in that, The swirl blades are multiple and arranged at intervals along the circumference of the gas guide pipe. Any two adjacent swirl blades, the gas guide pipe, and the tubular furnace form a mixing channel. The first nozzle on the first wall of one swirl blade and the first nozzle on the second wall of another swirl blade are located in the same mixing channel.

6. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to any one of claims 1-5, characterized in that, The atmosphere supply system also includes a gas distribution box, which is fitted into the reaction chamber. The gas distribution box is closer to the air inlet end than the high temperature zone. The inert gas source tank, the air inlet end and the gas distribution box are connected in sequence. The side of the gas distribution box facing the exhaust end is provided with a second nozzle. There are multiple second nozzles arranged in an array on the gas distribution box.

7. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to claim 1, characterized in that, The atmosphere supply system also includes a flow controller, which is located between the inert gas source tank and the gas inlet. The flow controller is used to control at least one parameter of the flow rate and mass of the inert gas supplied to the reaction chamber.

8. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to claim 1, characterized in that, The tubular furnace includes two heating sections arranged at intervals along the axial direction of the tubular furnace, and the reaction chamber forms the high-temperature zone or the low-temperature zone at the heating section. The reaction equipment also includes a temperature-controlled heating unit, which includes a heating jacket that is fitted over the heating section and can adjust the temperature of the heating section.

9. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to claim 7, characterized in that, The tubular furnace also includes a non-heating section, which is connected to the heating section and the two are arranged along the axial direction of the tubular furnace. The non-heating section is provided with an insulating coating, or the non-heating section is made of insulating material.

10. The gas-phase assisted ion exchange perovskite thin film in-situ conversion reaction apparatus according to claim 1, characterized in that, It also includes an exhaust gas treatment box, which is connected to the exhaust end to treat the exhaust gas generated in the reaction chamber.

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