A coated wave-transparent member, a method for manufacturing the same and use thereof

Abstract

The present application relates to the technical field of 6G communication, and more particularly to a coated wave-transparent component, a preparation method and application thereof.The coated wave-transparent component provided by the present application comprises a substrate and a wave-transparent film layer arranged on the substrate, the wave-transparent film layer comprising a bonding layer, at least one porous structure layer, and a hydrophobic and oleophobic layer;each porous structure layer comprises a first porous layer, a stress buffer barrier layer, and a second porous layer;the porosity of the first porous layer gradually increases from the side close to the bonding layer to the side close to the stress buffer barrier layer along the thickness direction of the first porous layer, the minimum porosity of the first porous layer being 15%-25% and the maximum porosity being 40%-55%;the porosity of the second porous layer is 60%-85%.The coated wave-transparent component provided by the present application has low dielectric properties, small dielectric loss, high mechanical strength, and high wave-transmittance, and meets the stringent requirements of 6G communication for high-quality signal transmission.

Description

Technical Field

[0001] This invention relates to the field of 6G communication technology, and in particular to a coated wave-transparent component, its preparation method, and its application. Background Technology

[0002] As communication technology advances towards the sixth-generation (6G) terahertz (THz) frequency band, more stringent requirements are being placed on the wave-transparent materials used in terminal device components such as smartphone back covers.

[0003] In existing technologies, materials commonly used for 6G transparent applications mainly include liquid crystal polymer (LCP) films and polyimide (PI) films. However, these materials all exhibit inherent technical limitations in the terahertz frequency band.

[0004] Specifically, for LCP films, although they have a low loss tangent (tanδ ≈ 0.002-0.003), their dielectric constant (ε) in the terahertz band is approximately 2.9-3.0. This value is far higher than the dielectric constant required for 6G communication. A higher dielectric constant not only shortens the signal wavelength, increasing the complexity of antenna design, but also increases interface reflection loss, thereby reducing signal transmission efficiency. For PI films, although they possess excellent heat resistance and mechanical strength, their molecular structure contains a large number of polar groups (such as imide rings and carbonyl groups), resulting in a dielectric loss tangent typically in the range of 0.01-0.02 or higher. In the 6G terahertz band, such high loss causes a large amount of signal energy to be absorbed by the material and converted into heat, resulting in severe signal attenuation. Measured data show that in frequency bands above 100GHz, the signal attenuation caused by PI films can be several times that of LCP films, making it difficult to meet the performance requirements of low latency and high throughput for 6G communication. In addition, PI film also has problems such as high hygroscopicity and opacity.

[0005] To address the inherent problems of the aforementioned materials, existing technologies have attempted to use low-dielectric ceramics (such as BaAl2Si2O8) or polymer-based composite materials as coating materials. However, these materials generally suffer from drawbacks such as low hardness, poor adhesion to the substrate, and weak process compatibility. This makes it difficult for them to meet the comprehensive requirements of consumer electronics products in terms of wear resistance (e.g., pencil hardness requirement of not less than 6H), mass production consistency, and adaptability to curved substrates.

[0006] In addition, other studies have also attempted to use coating structures such as magnetron sputtering and sol-gel methods to improve the wave transmission performance of the substrate. However, the inability to effectively construct structures such as gradient refractive index limits the further improvement of wave transmission performance. Moreover, the dielectric constant of general coating layers in the terahertz band is usually higher than 3.5, and the loss tangent is greater than 0.01, so their performance still cannot meet the application standards of 6G communication.

[0007] Therefore, there is an urgent need to develop a coated wave-transparent component that combines low dielectric properties, low dielectric loss, high mechanical strength, meets 6G communication requirements, and is engineerable, as well as its fabrication method and applications. Summary of the Invention

[0008] The purpose of this invention is to provide a coated wave-transparent component with low dielectric properties, low dielectric loss, high mechanical strength, 6G communication capability, and engineerable fabrication, as well as its fabrication method and application.

[0009] According to a first aspect of the present invention, a coated wave-transparent component is provided, comprising: Base; A wave-transparent film layer is deposited on the substrate; along the direction away from the surface of the substrate, the wave-transparent film layer sequentially includes a bonding layer, at least one porous structure layer, and a hydrophobic and oleophobic layer; In this structure, each porous layer, from the bonding layer toward the hydrophobic and oleophobic layer, sequentially includes a first porous layer, a stress buffer barrier layer, and a second porous layer. The porosity of the first porous layer gradually increases along its thickness direction from the side near the bonding layer to the side near the stress buffer barrier layer. The minimum porosity of the first porous layer is 15%-25%, and the maximum porosity is 40%-55%. The porosity of the second porous layer is 60%-85%.

[0010] The coated wave-transparent component provided by this invention features a multi-layered wave-transparent film structure on a substrate. By introducing a second porous layer with a porosity of 60%-85% as the core functional layer, the effective dielectric constant of the entire film layer is significantly reduced, thus meeting the requirements of low signal delay and low loss in high-frequency communication. Simultaneously, a first porous layer with a gradually increasing porosity is incorporated. On one hand, this creates a gradually changing refractive index, achieving smooth impedance matching from the dense substrate to the high-porosity layer, thereby greatly suppressing interface reflection and significantly improving transmittance. On the other hand, the gradual change in porosity ensures a continuous variation in the dielectric constant, avoiding localized field enhancement at abrupt interfaces and reducing dielectric loss. A stress-buffering barrier layer is placed between the first and second porous layers, physically isolating the two porous structures and effectively mitigating stress abrupt changes between different material layers. A hydrophobic and oleophobic layer is placed on the top layer of the wave-transparent film to reduce surface energy and prevent increased dielectric loss caused by the adhesion of environmental pollutants. This layer covers the fragile surface of the second porous layer, preventing pore closure due to surface tension and preventing direct contact of external water vapor with the highly porous surface, thus protecting the highly porous structure of the second porous layer and ensuring long-term maintenance of low dielectric and low-loss characteristics. A bonding layer is placed between the substrate and the porous structure layer to prevent direct bonding between the substrate and the first porous layer, improving interfacial adhesion and increasing film adhesion. It also acts as a transition layer, preventing a decrease in transmittance due to partial reflection caused by abrupt changes in the interfacial refractive index, while reducing reflection loss at the substrate-film interface. The synergistic effect between the various film layers in the wave-transparent film enables the coated wave-transparent component to achieve a comprehensive performance of high transmittance, low dielectric constant, low dielectric loss, and excellent reliability while ensuring high mechanical strength.

[0011] According to a second aspect of the present invention, the present invention also provides a method for preparing the above-described coated wave-transparent component, comprising the following steps: A bonding layer, at least one porous structure layer, and a hydrophobic and oleophobic layer are sequentially deposited on the substrate; wherein, when depositing each porous structure layer, a first porous layer, a stress buffer barrier layer, and a second porous layer are sequentially deposited.

[0012] Preferably, a plasma-enhanced atomic layer deposition (PEALD) method is used to set the transparent film layer. Plasma is used for micro-etching to control the pore distribution during the deposition of the first and second porous layers. By employing PEALD and strictly following a specific deposition sequence, the PEALD process offers atomic-level thickness control and excellent conformability, enabling the precise fabrication of functional films with specific porosity variations and nanoscale dimensions.

[0013] According to a third aspect of the present invention, the present invention also provides the application of the above-described coated wave-transparent component or the coated wave-transparent component prepared by the above-described preparation method in a 6G communication terminal device.

[0014] The beneficial effects of this invention are: This invention develops a coated wave-transparent component that combines excellent high-frequency electromagnetic performance with superior mechanical strength through functional film layer design. The wave-transparent film layer provided by this invention sequentially comprises a bonding layer, a first porous layer with gradually increasing porosity, a stress buffer barrier layer, a second porous layer with a porosity as high as 60%-85%, and a hydrophobic and oleophobic layer. Through the synergistic effect between these film layer structures, the coated wave-transparent component achieves a comprehensive performance of high transmittance, low dielectric constant, and excellent reliability while ensuring high mechanical strength, thus solving the technical problem of brittleness and fragility commonly found in traditional low-dielectric materials.

[0015] The preparation method of this invention can achieve highly uniform coating on complex 3D curved surfaces and endow the product with excellent environmental resistance, providing an ideal solution for next-generation communication terminals such as smartphone back covers and wearable devices that balances signal performance and structural durability. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of a coated wave-transparent component provided in Embodiment 1 of the present invention.

[0018] Figure 2 This is a temperature control diagram of the annealing process in the preparation method of a coated wave-transparent component provided in Embodiment 1 of the present invention.

[0019] Reference numerals: 1: Substrate; 2: Wave-transparent film layer; 21: Bonding layer; 22: Porous structure layer; 23: Hydrophobic and oleophobic layer; 221: First porous layer; 222: Stress buffer barrier layer; 223: Second porous layer. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0021] In a first embodiment of the present invention, a coated wave-transparent component is provided. In some specific embodiments of the present invention, the coated wave-transparent component includes: Base; A wave-transparent film layer is disposed on the substrate; along the direction away from the surface of the substrate, the wave-transparent film layer sequentially includes a bonding layer, at least one porous structure layer, and a hydrophobic and oleophobic layer; In this structure, each porous layer, from the bonding layer toward the hydrophobic and oleophobic layer, sequentially includes a first porous layer, a stress buffer barrier layer, and a second porous layer. The porosity of the first porous layer gradually increases along its thickness direction from the side near the bonding layer to the side near the stress buffer barrier layer. The minimum porosity of the first porous layer is 15%-25%, and the maximum porosity is 40%-55%. The porosity of the second porous layer is 60%-85%.

[0022] The coated wave-transparent component provided by this invention features a multi-layered wave-transparent film structure on a substrate. By introducing a second porous layer with a porosity of 60%-85% as the core functional layer, the effective dielectric constant of the entire film layer is significantly reduced, thus meeting the requirements of low signal delay and low loss in high-frequency communication. Simultaneously, a first porous layer with a gradually increasing porosity is incorporated. On one hand, this creates a gradually changing refractive index, achieving smooth impedance matching from the dense substrate to the high-porosity layer, thereby greatly suppressing interface reflection and significantly improving transmittance. On the other hand, the gradual change in porosity ensures a continuous variation in the dielectric constant, avoiding localized field enhancement at abrupt interfaces and reducing dielectric loss. A stress-buffering barrier layer is placed between the first and second porous layers, physically isolating the two porous structures and effectively mitigating stress abrupt changes between different material layers. A hydrophobic and oleophobic layer is placed on the top layer of the wave-transparent film to reduce surface energy and prevent increased dielectric loss caused by the adhesion of environmental pollutants. This layer covers the fragile surface of the second porous layer, preventing pore closure due to surface tension and preventing direct contact of external water vapor with the highly porous surface, thus protecting the highly porous structure of the second porous layer and ensuring long-term maintenance of low dielectric and low-loss characteristics. A bonding layer is placed between the substrate and the porous structure layer to prevent direct bonding between the substrate and the first porous layer, improving interfacial adhesion and increasing film adhesion. It also acts as a transition layer, preventing a decrease in transmittance due to partial reflection caused by abrupt changes in the interfacial refractive index, while reducing reflection loss at the substrate-film interface. The synergistic effect between the various film layers in the wave-transparent film enables the coated wave-transparent component to achieve a comprehensive performance of high transmittance, low dielectric constant, and excellent reliability while ensuring high mechanical strength.

[0023] In this invention, at least one porous structure layer can be a single porous structure layer, or it can be two, three, four, five, or more porous structure layers. If it is a multi-layer porous structure layer, adjacent porous structure layers are separated by a stress-buffering barrier layer.

[0024] In this invention, if the initial minimum porosity of the first porous layer is less than 15% (e.g., 5%), the refractive index difference with the bonding layer is too small, and the gradient effect is not obvious. If the initial minimum porosity of the first porous layer is greater than 25% (e.g., 30%), the bonding force with the bonding layer deteriorates. 15%-25% can ensure a balance between the bonding force and the starting point of the gradient. If the final maximum porosity of the first porous layer is less than 40%, it is difficult to achieve excellent variation effects, and thus it is difficult to effectively suppress interface reflection, resulting in an insignificant improvement in transmittance. If the final maximum porosity of the first porous layer is greater than 55%, the first porous layer skeleton becomes too sparse, and pores are prone to collapse under surface tension.

[0025] In some specific embodiments of the present invention, the minimum porosity of the first porous layer is 20% and the maximum porosity is 50%.

[0026] In some specific embodiments of the present invention, the difference between the maximum porosity and the minimum porosity of the first porous layer is 15%-30%.

[0027] This invention controls the difference between the maximum and minimum porosity of the first porous layer within a range of 15%-30%. Within this smoothly varying refractive index range, impedance matching over a wide frequency band can be achieved more effectively, electromagnetic wave interface reflection can be effectively suppressed, wave transmittance can be improved, and the frequency range of high-efficiency wave transmission can be broadened, resulting in stable and excellent wave transmission performance.

[0028] According to the coated wave-transparent component of the present invention, the pore sizes of the first porous layer and the second porous layer are each independently 10-50 nm. This pore size range is much smaller than the terahertz wavelength, effectively avoiding scattering. Furthermore, this pore size range ensures the mechanical strength of the porous layer as well as its resistance to moisture absorption and water vapor barrier properties. Simultaneously, combined with the subsequent hydrophobic and oleophobic layers, the pore structure within this size range can maintain a dry gas state in a dry environment, ensuring low loss.

[0029] In this invention, when the pore size is between 10-50 nm, the framework of the porous layer has sufficient bending stiffness to resist surface tension, ensuring that the pore structure remains open and stable after deposition and in subsequent processes.

[0030] In some specific embodiments of the present invention, the thickness of the first porous layer is 100-150 nm. This thickness is sufficient to construct a smooth and effective refractive index gradient profile, allowing its refractive index to smoothly transition between 1.4 and 1.5, thereby minimizing interface reflection. Simultaneously, this thickness is thin enough to effectively control the bulk absorption loss of the material itself, avoiding signal attenuation due to excessive optical path length, thus ensuring the overall performance of the entire coated wave-transparent component in terms of high transmittance and low loss. The refractive index of the first porous layer is 1.4-1.5, which matches the refractive index of the bonding layer, greatly suppressing the reflection loss of terahertz waves at the substrate-film interface, ensuring that signal energy can enter subsequent functional layers to the maximum extent.

[0031] In some specific embodiments of the present invention, the thickness of the second porous layer is 120-180 nm. This thickness range provides sufficient functional layer volume to achieve a porosity of up to 60%-85%, thereby significantly reducing the effective dielectric constant of the film. Simultaneously, this thickness design avoids the problems of internal stress accumulation and decreased mechanical stability caused by excessive film thickness, ensuring stress matching and structural integrity between the second porous layer and the stress buffer barrier layer.

[0032] In some specific embodiments of the present invention, the material of the first porous layer is selected from one or more of silicon dioxide, aluminum oxide, or silicon carbide.

[0033] In some specific embodiments of the present invention, the material of the second porous layer is selected from one or more of silicon dioxide, aluminum oxide, or silicon carbide.

[0034] In some specific embodiments of the present invention, the stress buffer barrier layer satisfies the following characteristics: Young's modulus (E) ≥ 150 GPa, to ensure high modulus, provide rigid support, and prevent the porous layer from collapsing; hardness (H) ≥ 10 GPa, to ensure wear resistance and prevent scratches from causing water vapor intrusion; water vapor permeability < 1 × 10⁻⁶. -6 g·m -2 ·day -1 Density > 95%.

[0035] In some specific embodiments of the present invention, the thickness of the stress buffer barrier layer is 50-80 nm.

[0036] In this invention, the stress-buffered barrier layer acts as an isolation layer between the first and second porous layers, preventing direct stress transmission that could lead to interface failure. The stress-buffered barrier layer also prevents metal ions (such as sodium ions) in the substrate from causing interfacial failure. + These ions diffuse into the film layer, significantly increasing dielectric loss in the terahertz band. The stress-buffered barrier layer also prevents byproducts or environmental pollutants from the upper deposition process from penetrating downwards.

[0037] In some specific embodiments of the present invention, the refractive index of the stress buffer barrier layer is 1.90-2.00.

[0038] This invention limits the refractive index of the stress buffer barrier layer to 1.90-2.00. This high-refractive-index thin film, together with the adjacent low-refractive-index porous layer, forms an efficient high-low refractive-index combination, further suppressing reflection and improving transmittance through the principle of destructive interference. Limiting the thickness of the stress buffer barrier layer to 50-80 nm better achieves the aforementioned functions.

[0039] In some specific embodiments of the present invention, the material of the stress-reducing barrier layer is selected from one or more of silicon nitride, aluminum oxide, titanium oxide, or hafnium oxide. These materials can meet the modulus, hardness, and density requirements of the aforementioned stress-reducing barrier layer.

[0040] In some specific embodiments of the present invention, the stress buffer barrier layer is made of silicon nitride. Silicon nitride has a modulus of approximately 200-300 GPa. When deformation occurs between the upper and lower layers, the silicon nitride layer can bear most of the load, limiting excessive deformation of the porous layer and preventing its collapse. Silicon nitride is more resistant to crack propagation than silicon dioxide. If stress concentration leads to the formation of microcracks, the silicon nitride layer can prevent the cracks from propagating from the second layer to the fourth layer, thus playing a "crack-stopping" role. The CTE of silicon nitride is between that of dense SiO2 and highly porous SiO2. When the temperature changes, it can absorb the energy generated by thermal mismatch, avoiding stress concentration at a single interface. Utilizing the compressive stress characteristics of the silicon nitride layer, the silicon nitride layer neutralizes the tensile stress of the porous layer, keeping the overall film system in a state of mechanical equilibrium and preventing the film layer from spontaneously curling or detaching due to excessive internal stress.

[0041] In some specific embodiments of the present invention, the hydrophobic and oleophobic layer shall meet any or all of the following performance indicators: Young's modulus (E): ≥150 GPa (ensuring high modulus, providing rigid support, and preventing the porous layer from collapsing); Hardness (H): ≥10 GPa (ensuring wear resistance and preventing scratches that could lead to water vapor intrusion); Water vapor transmission rate (WVTR): <1×10 -6 g·m -2 ·day -1 Density: >95%.

[0042] In some specific embodiments of the present invention, the material of the hydrophobic and oleophobic layer is selected from one or more of magnesium fluoride, calcium fluoride, fluoropolymers, or fluorinated silica. These materials can meet the modulus, hardness, and density requirements of the aforementioned hydrophobic and oleophobic layer.

[0043] In some specific embodiments of the present invention, the thickness of the hydrophobic and oleophobic layer is 60-100 nm.

[0044] In this invention, when the thickness of the hydrophobic and oleophobic layer is 60-100nm, the hydrophobic and oleophobic layer can form a continuous and uniform coverage, avoiding defects such as pinholes, satisfying its physical protection and water vapor barrier performance, effectively protecting the internal functional layer, while avoiding the accumulation of excessive internal stress and reducing the risk of film cracking or delamination.

[0045] In some specific embodiments of the present invention, the contact angle of the hydrophobic and oleophobic layer is ≥105° (preferably ≥110°); the surface energy of the hydrophobic and oleophobic layer is <25mN / m; the refractive index of the hydrophobic and oleophobic layer is between 1.35 and 1.60; and the hydrophobic and oleophobic layer does not dissolve or corrode in the pH range of 4-9.

[0046] In some specific embodiments of the present invention, the material of the hydrophobic and oleophobic layer is selected from one or more of magnesium fluoride, calcium fluoride (CaF2), fluoropolymers (such as PTFE nanocoatings), or fluorinated silica.

[0047] In some specific embodiments of the present invention, the material of the hydrophobic and oleophobic layer is selected from magnesium fluoride, which has excellent hydrophobic and oleophobic properties and a contact angle greater than 110°.

[0048] In some specific embodiments of the present invention, the equivalent diameter of the substrate is 30-300 mm; the thickness of the substrate is 0.3-0.8 mm.

[0049] In some specific embodiments of the present invention, the thickness of the bonding layer is 80-120 nm.

[0050] In this invention, the bonding layer provides a stable foundation for the entire film to bond firmly with the substrate. The thickness of the bonding layer is limited to 80-120 nm, which ensures the formation of a complete and uniform film to achieve firm adhesion to the substrate, while being thin enough to avoid introducing unnecessary absorption losses.

[0051] In some specific embodiments of the present invention, the refractive index of the bonding layer is 1.45-1.50. Designing the refractive index of the bonding layer to be 1.45-1.50 matches the initial refractive index of commonly used substrates (such as glass, with a refractive index of about 1.50) and the first porous layer, which can minimize the reflection loss of electromagnetic waves at the substrate-film interface and ensure the efficient transmission of signal energy.

[0052] In some specific embodiments of the present invention, the material of the bonding layer is selected from one or more of fluorine-doped silicon oxide (SiOx:F) or fluorine-doped silicon dioxide network materials. Fluorine-doped silicon dioxide is preferred.

[0053] In this invention, fluorine (F) atoms have extremely high electronegativity and small atomic radii. Selecting a fluorine-doped material as the bonding layer material can reduce polarizability, which helps to reduce the overall equivalent dielectric constant and also enhances the chemical bonding with the substrate.

[0054] In some specific embodiments of the present invention, the fluorine doping amount in the bonding layer is 3-5 at.%.

[0055] Appropriate fluorine doping can adjust the network structure, moderately release tensile stress or introduce slight compressive stress, so that the thermal expansion coefficients of the film and the substrate are more matched, reducing the risk of delamination.

[0056] In some specific embodiments of the present invention, the material of the substrate is selected from glass or sapphire.

[0057] In some specific embodiments of the present invention, the substrate is made of chemically strengthened glass or sapphire.

[0058] In some specific embodiments of the present invention, the substrate is chemically strengthened glass with a side length (or equivalent diameter) of 30 mm to 300 mm; the thickness of the substrate is 0.3 mm to 0.8 mm, preferably 0.5 mm to 0.6 mm.

[0059] In some specific embodiments of the present invention, the coated wave-transparent component satisfies at least one of the following features (1)-(3): (1) The transmittance at 0.3THz, 3THz and 10THz is ≥92% (preferably 93%-94.55%), ≥89% (preferably 89.5%-91%) and ≥86% (preferably 87.5%-89%), respectively. (2) The dielectric constant ε of the coated wave-transparent component is less than 2.6 (preferably 2.45-2.55). (3) The loss tangent tanδ of the coated wave-transmitting component is less than 0.005 (preferably 0.0038-0.0048).

[0060] Preferably, the nanoindentation hardness of the coated wave-transparent component is ≥5.0 GPa (preferably 5.8 GPa-6.2 GPa). The pencil hardness of the coated wave-transparent component is ≥6H (preferably 6H-8H).

[0061] In a second embodiment of the present invention, the present invention also provides a method for preparing the above-mentioned coated wave-transparent component, comprising the following steps: A bonding layer, at least one porous structure layer, and a hydrophobic and oleophobic layer are sequentially deposited on the substrate using plasma-enhanced atomic layer deposition. In the process of depositing each porous structure layer, a first porous layer, a stress buffer barrier layer, and a second porous layer are deposited sequentially; and plasma micro-etching is used to control the pore distribution when depositing the first porous layer and the second porous layer.

[0062] This invention employs plasma-enhanced atomic layer deposition (PEALD) and strictly adheres to a specific deposition sequence. PEALD technology offers atomic-level thickness control and excellent conformability, enabling the precise fabrication of functional films with specific porosity variations and nanoscale dimensions. Plasma micro-etching during the deposition of the first and second porous layers further refines the control of pore distribution. Through bottom-up, ordered deposition, this invention ensures that the thickness, composition, and microstructure of each layer meet requirements, thereby producing coated wave-transparent components with excellent electromagnetic properties and mechanical stability.

[0063] In some specific embodiments of the present invention, the temperature of the plasma-enhanced atomic layer deposition method is 95-220°C. Within this temperature range, the chemical precursor can undergo sufficient and controllable surface reactions, thereby forming a high-purity, highly dense, and uniformly thick film; at the same time, this temperature effectively avoids the thermal decomposition of the precursor due to excessively high temperature or the physical condensation caused by excessively low temperature, thus avoiding the introduction of impurities.

[0064] In some specific embodiments of the present invention, the deposition cycle number of the bonding layer on the substrate is 800-1000 cycles. Such conditions are beneficial for preparing a bonding layer that has both excellent optical matching and strong mechanical adhesion.

[0065] In some specific embodiments of the present invention, during the deposition of the first porous layer, the deposition cycle number is 1000-2000 cycles, and Ar and / or O2 plasma is simultaneously introduced for micro-etching, preferably with an etching power of 200-400W. This allows for the controllable construction of a porous structure with a gradual increase in porosity from low to high.

[0066] In some specific embodiments of the present invention, the deposition cycle number is 600-700 cycles when depositing the stress buffer barrier layer. This condition is conducive to the formation of a high-performance stress buffer barrier layer that can not only effectively block the penetration of water vapor and impurities, but also provide strong mechanical support to prevent the collapse of the porous structure.

[0067] In some specific embodiments of the present invention, during the deposition of the second porous layer, the deposition cycle number is 1000-2000 cycles, and Ar and / or O2 plasma is simultaneously introduced for micro-etching, preferably with an etching power of 200-400W. This enables the in-situ formation of a second porous layer with high porosity.

[0068] In this invention, Ar plasma is introduced during micro-etching. This process does not alter the chemical composition; atoms are removed purely through kinetic energy, making it suitable for controlling pore size (10-50 nm). By adjusting the energy of Ar, the smoothness or sharpness of the pores can be controlled. Introducing O2 plasma during micro-etching ensures that volatile etching products (such as SiO and SiF4) do not remain in the pores and clog them. Simultaneously, O2 prevents surface carbonization and maintains the chemical purity of SiO2, which is crucial for low loss (tanδ). Ar bombardment of the surface exposes fresh bonds, which are then rapidly removed by O2. This synergistic effect achieves higher and more controllable porosity than using either gas alone.

[0069] In micro-etching processes, the porosity of the thin film can be precisely controlled by continuously increasing the oxygen flow rate. The principle lies in the fundamental change in the role of oxygen: at low flow rates (5 sccm-10 sccm), the etching effect of oxygen is weak, mainly acting as an oxidant to form a dense film (corresponding to approximately 20% porosity); as the flow rate increases (10 sccm-20 sccm), reactive oxygen free radicals increase, and chemical etching begins to emerge, significantly etching the SiO2 framework to form nanopores, thus increasing the porosity (corresponding to approximately 55% porosity); at extremely high flow rates (20 sccm-50 sccm), chemical etching dominates, removing a large amount of deposited material, ultimately forming a sparse framework structure with ultra-high porosity (60%-85%). It should be noted that those skilled in the art should understand that plasma power also affects porosity; within a certain range, for the same oxygen flow rate, higher plasma power results in a product with higher porosity.

[0070] In micro-etching processes, the pore structure of thin films can be precisely controlled by continuously increasing the flow rate or power of argon (Ar) gas, utilizing its physical bombardment effect. Increasing the energy of argon ions enables physical etching ranging from gentle to intense. At low power (100W-200W), argon ions can only remove weak surface aggregates, maintaining the film's density; while at high power (200W-400W), high-energy argon ions can penetrate deep into and break down the material's skeletal network, effectively increasing pore size and improving overall porosity.

[0071] In some specific embodiments of the present invention, the deposition cycle number is 700-800 cycles when depositing the hydrophobic and oleophobic layer. This is beneficial for preparing a dense and uniform hydrophobic and oleophobic layer.

[0072] In some specific embodiments of the present invention, the preparation method includes the following steps: Using TEOS as a precursor, O3 as an oxidant, and CF4 as a fluorine source, the deposition cycle number is controlled to be 800-1000 cycles to deposit the bonding layer on the substrate. Using TEOS as a precursor and O3 as an oxidant, the deposition cycle number is controlled at 1000-2000 cycles, and Ar and / or O2 plasma is simultaneously introduced to perform micro-etching at a power of 200-400W to deposit the first porous layer on the bonding layer. Using SiH4 and NH3 as raw materials, the deposition cycle number is controlled to be 600-700 cycles to deposit the stress buffer barrier layer on the first porous layer; Using TEOS as a precursor and O3 as an oxidant, the deposition cycle number is controlled at 1000-2000 cycles, and Ar and / or O2 plasma is simultaneously introduced to perform micro-etching at a power of 200-400W, so as to deposit the second porous layer on the stress buffer barrier layer. Using Mg(C5H5)2 and F2 as raw materials, the deposition cycle number is controlled to be 700-800 cycles to deposit the hydrophobic and oleophobic layer on the second porous surface.

[0073] In some specific embodiments of the present invention, the following steps are also included: annealing and pore-sealing strengthening treatment are performed sequentially on the sample after the hydrophobic and oleophobic layer is deposited.

[0074] In the preparation method of this invention, annealing can eliminate structural defects, such as dangling bonds and microcracks formed during the deposition process, and avoid the formation of charge traps at the defects, thereby avoiding dielectric relaxation loss. The pore-sealing strengthening treatment can eliminate adsorbed water on the surface of the hydrophobic and oleophobic layer, ensuring low loss at high frequencies.

[0075] In some specific embodiments of the present invention, the annealing process is pulse annealing, including alternating rapid thermal annealing and slow cooling annealing. The rapid thermal annealing involves heating to 350-450°C at a heating rate of 40-60°C / s and annealing for 20-40 seconds; the slow cooling annealing involves annealing at 200-300°C for 90-150 seconds.

[0076] Pulse annealing ensures the mechanical reliability and low loss of the film. Significant internal stress is generated during deposition; without annealing, numerous microcracks and defects exist within the film. The atomic arrangement in non-porous regions is not dense enough, resulting in insufficient mechanical strength (low hardness). Microcracks and dangling bonds act as charge traps, increasing dielectric relaxation loss and leading to an increase in tanδ. In particular, the nanoframework of the second porous layer is extremely sensitive to thermal history. If conventional continuous annealing is used, the framework will undergo thermal creep and sintering at high temperatures, causing pore collapse and destroying the designed low dielectric constant structure.

[0077] It should be noted that the pulse annealing process should not be regarded as a necessary technical feature for solving the technical problems that this technical solution needs to address. It is only used to effectively solve the large internal stress and defects generated in the current deposition process, and can effectively improve the technical effect under the current process.

[0078] In some specific embodiments of the present invention, the pore-sealing strengthening treatment involves reacting the annealed sample with a pore-sealing strengthening agent at 60-80°C for 10-20 minutes. The pore-sealing strengthening agent is selected from one or more of 1H,1H,2H,2H-perfluorooctyltriethoxysilane, perfluorodecyltriethoxysilane, or perfluorononyltriethoxysilane.

[0079] In a third embodiment of the present invention, the present invention also provides the application of the above-described coated wave-transparent component or the coated wave-transparent component prepared by the above-described preparation method in 6G communication terminal equipment.

[0080] In this invention, 6G communication terminal equipment refers to various hardware devices that can access 6G networks and utilize their new characteristics such as ultra-high peak speed, ultra-low latency, ultra-high reliability, ultra-large connection capacity, and integrated communication and computing to provide services or perform specific functions for users. Examples include smartphones and tablets, wearable devices (including smartwatches, smart bracelets, smart glasses, smart clothing, and even patch sensors), XR devices, intelligent connected vehicles, industrial IoT terminals and robots, and drones.

[0081] The coated wave-transparent component of the present invention is particularly suitable for scenarios with stringent requirements for high-frequency signal transmission, such as smartphone back covers and wearable device casings.

[0082] The beneficial effects of the present invention will be described below with reference to specific embodiments and comparative examples.

[0083] The performance testing methods used in the following embodiments and comparative examples are as follows: 1. THz transmittance Measurement equipment: Terahertz time-domain spectrometer (THz-TDS) Reference standard: ASTM E1264 2. Dielectric constant Measurement equipment: Terahertz time-domain spectrometer (THz-TDS) Reference standard: ASTM D150 3. Loss tangent Measurement equipment: Terahertz time-domain spectrometer (THz-TDS) Reference standard: ASTM D150 4. Nano-indentation hardness Measuring equipment: Nanoindenter Reference standard: ASTM E2546 5. Pencil hardness Measuring equipment: Pencil hardness tester Reference standard: ASTM D3363 6. Film thickness uniformity (CV) Measurement equipment: Spectroellipsometry (SE) Reference standard: ASTM F1557 7. Contact Angle Measuring equipment: Contact angle measuring instrument Reference standard: ASTM D7334 8. Wear resistance Measuring equipment: Taber abrasion tester Reference standard: ASTM D4060 9. Haze Measuring equipment: Transmission haze meter Reference standard: ASTM D1003 Example 1 This embodiment provides a coated wave-transparent component, such as... Figure 1 As shown, the coated wave-transparent component includes a substrate 1 and a wave-transparent film layer 2 disposed on the substrate 1. Along the direction away from the surface of the substrate 1, the wave-transparent film layer 2 sequentially includes a bonding layer 21, a porous structure layer 22, and a hydrophobic and oleophobic layer 23. From the bonding layer 21 toward the hydrophobic and oleophobic layer 23, each porous structure layer 22 sequentially includes a first porous layer 221, a stress buffer barrier layer 222, and a second porous layer 223.

[0084] The substrate 1 is made of 0.55mm chemically strengthened glass with dimensions of 150mm × 75mm.

[0085] The bonding layer 21 is made of fluorine-doped silicon dioxide with a fluorine doping amount of 4 at.%, a thickness of 90 ± 10 nm, and a refractive index of 1.46.

[0086] The first porous layer 221 is made of silicon dioxide, with a thickness of 120±15nm and a refractive index of 1.45. The first porous layer 221 has a minimum porosity of 20%, a maximum porosity of 50%, and a pore size of 30nm.

[0087] The stress buffer barrier layer 222 is selected from silicon nitride, with a thickness of 65±5nm and a refractive index of 1.98; The second porous layer 223 is made of silicon dioxide and has a thickness of 140±20 nm. The porosity of the second porous layer 223 is 60%, and the pore size is 30 nm.

[0088] The hydrophobic and oleophobic layer 23 is made of magnesium fluoride, with a thickness of 75±10 nm and a refractive index of 1.38.

[0089] This embodiment also provides a method for preparing the coated wave-transparent component, including the following steps: 1. Substrate preparation: 0.55mm chemically strengthened glass is selected as the substrate, with a size of 150mm×75mm.

[0090] 2. Substrate pretreatment: Alkaline washing treatment: Immerse the substrate in a 5% sodium hydroxide (NaOH) solution and ultrasonically clean it for 10 minutes at 50°C to remove surface organic contaminants and slightly etch the surface to increase roughness and improve adhesion.

[0091] Ultrapure water rinsing: Rinse the substrate three times with ultrapure water (resistivity 18.2 MΩ*cm), 5 minutes each time, to thoroughly remove residual alkali.

[0092] Plasma activation: The dried substrate is placed in a plasma cleaning chamber, oxygen (O2) is introduced, the power is set to 150W, and the treatment time is 60 seconds. This step aims to activate the glass surface and introduce a large number of silanol groups (-Si-OH), providing abundant nucleation sites for subsequent atomic layer deposition.

[0093] 3. PEALD deposition: The activated substrate was fed into the plasma-enhanced atomic layer deposition (PEALD) reaction chamber, and the substrate temperature was set to 100±5℃. Five functional films were deposited sequentially.

[0094] The specific parameters are as follows: Bonding layer 21 (fluorine-doped SiO2): TEOS / O3 precursor, F source is CF4, deposition cycle number is 900 cycles, thickness is 90±10nm, reduces the interfacial dielectric constant, and enhances the chemical bonding with the substrate.

[0095] First porous layer 221 (gradiently porous SiO2): A TEOS / O3 precursor. During deposition, the Ar plasma etching power is kept constant at 250W to maintain a stable pore size distribution, while the O2 plasma flow rate is increased linearly in real time, gradually increasing from 5 sccm in the initial stage to 25 sccm in the final stage. The total number of deposition cycles is 1500, and the total thickness is 120±15nm. By continuously increasing the O2 flow rate to enhance the chemical etching effect, a gradual distribution of nanoporosity is achieved within the film, from low porosity near the bonding layer to high porosity near the stress buffer barrier layer.

[0096] Stress buffer barrier layer 222 (Si3N4): SiH4 / NH3 precursor, deposition cycle number 650 cycles, thickness 65±5nm.

[0097] Second porous layer 223 (high porosity SiO2): TEOS / O3 precursor, Ar plasma etching power 350W, deposition cycle number 1600 cycles, thickness 140±20nm.

[0098] Hydrophobic and oleophobic layer 23 (MgF2): Mg(C5H5)2 / F2 precursor, deposition cycle number 750 cycles, thickness 75±10nm, provides hydrophobic and oleophobic protection, further reduces surface reflection and improves light transmittance.

[0099] 4. Pulse annealing: Rapid thermal annealing (RTA) was used: 400℃ / 30s (heating rate 50℃ / s).

[0100] Then, slow cooling annealing (CTA) was performed at 250℃ for 120 seconds. Specifically, such as Figure 2 As shown: 0-6s: RTA heating → from ~100℃ to 400℃ (slope ≈ 50℃ / s); 6-36s: RTA holding → 400℃ constant temperature for 30s; 36-156s: CTA slow cooling → from 400℃ to 250℃ (time 120s, cooling rate = 1.25℃ / s); 156-186s: continued cooling → from 250℃ to ~100℃ (natural cooling).

[0101] 5. In-situ sealing reinforcement: Sealing reaction: The annealed sample was placed in a vacuum reaction chamber, and 1H,1H,2H,2H-perfluorooctyltriethoxysilane (FAS-17) vapor was introduced. The reaction was carried out at 65°C for 15 minutes. FAS-17 molecules reacted with the surface silanol groups to form a dense monomolecular hydrophobic layer, sealing the openings of the nanopores.

[0102] Purging and cleaning: After the reaction is complete, purge with high-purity nitrogen for 10 minutes to remove unreacted residues.

[0103] 6. Performance Testing: Transmittance: 94.1% at 0.3THz, 90.7% at 3THz, and 88.5% at 10THz.

[0104] Dielectric properties: ε=2.48±0.05, tanδ=0.0041±0.0003.

[0105] Adhesion: ASTM D3359 cross-cut adhesion test grade 0.

[0106] Abrasion resistance: Taber abrasion (CS-10 wheel, 1000g) Δhaze < 2%.

[0107] Hardness: Nano-indentation hardness 5.92 GPa, pencil hardness 6H.

[0108] Hydrophobicity: Water contact angle 112°.

[0109] Example 2 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the substrate 1 is made of 0.12mm UTG glass with a radius of curvature of 3.5R.

[0110] This embodiment also provides a method for preparing the coated wave-transparent component, including the following steps: 1. Substrate preparation: 0.12mm UTG glass with a radius of curvature of 3.5R is selected.

[0111] 2. Substrate pretreatment: Same as in Example 1.

[0112] 3. PEALD deposition: Temperature: 200±5℃; Dynamically adjust the spray head angle and gas flow field to ensure uniform film thickness on curved surfaces; Deposition parameters: Same as in Example 1.

[0113] 4. Pulse annealing: Same as in Example 1.

[0114] 5. In-situ sealing reinforcement: Same as Example 1.

[0115] 6. Performance Testing: Film thickness uniformity: edge / center thickness ratio 0.98, CV value <3%.

[0116] Transmittance: 93.8% at 0.3THz, 90.2% at 3THz, and 88.1% at 10THz.

[0117] Dielectric properties: ε=2.51±0.06, tanδ=0.0043±0.0004.

[0118] Folding test: After 100,000 folds, the transmittance fluctuation is less than 1.5%, and there is no cracking of the membrane layer.

[0119] Example 3 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the substrate 1 is a 0.4mm sapphire substrate with a size of 150mm × 75mm.

[0120] This embodiment also provides a method for preparing the coated wave-transparent component, including the following steps: 1. Substrate preparation: Select a 0.4mm sapphire substrate with dimensions of 150mm × 75mm.

[0121] 2. Substrate pretreatment: Same as in Example 1.

[0122] 3. PEALD deposition: Same as in Example 1.

[0123] 4. Pulse annealing: Same as in Example 1.

[0124] 5. In-situ sealing reinforcement: Same as Example 1.

[0125] 6. Performance Testing: Transmittance: 93.5% at 0.3THz, 89.8% at 3THz, and 87.9% at 10THz.

[0126] Dielectric properties: ε=2.53±0.05, tanδ=0.0044±0.0003.

[0127] Adhesion: ASTM D3359 cross-cut adhesion test grade 0.

[0128] Hardness: Nano-indentation hardness 6.15 GPa, pencil hardness 6H.

[0129] Example 4 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the porosity of the first porous layer 221 is 25% at the minimum and 40% at the maximum.

[0130] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: the deposition conditions of the first porous layer 221 are as follows: a TEOS / O3 precursor is used, and Ar / O2 plasma is simultaneously introduced for in-situ micro-etching. The Ar plasma etching power is kept constant at 250W to maintain stable pore size (approximately 30nm), while the flow rate of the O2 plasma is increased linearly in real time, gradually increasing from 8 sccm in the initial stage to 22 sccm in the final stage. The continuous increase in O2 flow rate enhances the chemical etching effect, causing the porosity of the deposited film to gradually increase from 25% near the bonding layer 21 to 40% near the stress buffer barrier layer 222. The total number of deposition cycles is controlled at 1500 cycles, and the thickness is 120±15nm.

[0131] Example 5 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the minimum porosity of the first porous layer 221 is 25% and the maximum porosity is 55%.

[0132] This embodiment also provides a method for fabricating the coated wave-transparent component, which differs from Embodiment 1 in that: the deposition conditions for the first porous layer 221 are as follows: a TEOS / O3 precursor is used, and Ar / O2 plasma is simultaneously introduced for in-situ micro-etching. The Ar plasma etching power is kept constant at 300W, while the flow rate of the O2 plasma is increased linearly in real time, gradually increasing from 10 sccm in the initial stage to 25 sccm in the final stage. Through the linear increase in the O2 flow rate, the porosity of the deposited film gradually increases from 25% near the bonding layer 21 to 55% near the stress buffer barrier layer 222. The total number of deposition cycles is controlled at 1500 cycles, and the thickness is 120±15nm.

[0133] Example 6 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the minimum porosity of the first porous layer 221 is 15% and the maximum porosity is 40%.

[0134] This embodiment also provides a method for fabricating the coated wave-transparent component, which differs from Embodiment 1 in that: the deposition conditions for the first porous layer 221 are: TEOS / O3 precursor; simultaneous introduction of Ar / O2 plasma for in-situ micro-etching. The Ar plasma etching power is kept constant at 200W, while the O2 plasma flow rate is increased linearly in real time, gradually increasing from 5 sccm in the initial stage to 15 sccm in the final stage. Through the small increase in O2 flow rate, the porosity of the deposited film gradually increases from 15% near the bonding layer 21 to 40% near the stress buffer barrier layer 222. The total number of deposition cycles is controlled at 1500 cycles, and the thickness is 120±15nm.

[0135] Example 7 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the minimum porosity of the first porous layer 221 is 25% and the maximum porosity is 45%.

[0136] This embodiment also provides a method for fabricating the coated wave-transparent component, which differs from Embodiment 1 in that: the deposition conditions for the first porous layer 221 are: TEOS / O3 precursor; simultaneous introduction of Ar / O2 plasma for in-situ micro-etching. The Ar plasma etching power is kept constant at 280W, while the O2 plasma flow rate is increased linearly in real time, gradually increasing from 9 sccm in the initial stage to 18 sccm in the final stage. Through precise control of the O2 flow rate, the porosity of the film layer is uniformly transitioned from 25% near the bonding layer 21 to 45% near the stress buffer barrier layer 222. The total deposition cycle number is controlled at 1500 cycles, and the thickness is 120±15nm.

[0137] Example 8 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the porosity of the second porous layer 223 is 70%.

[0138] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: the deposition conditions of the second porous layer 223 are as follows: the total plasma power is kept constant at 350W, the gas flow rate ratio of Ar to O2 is adjusted, and the flow rate ratio of Ar:O2 is set to 3:1 (Ar=30sccm, O2=10sccm). The physical etching effect is enhanced by using a higher concentration of Ar plasma, which inhibits excessive oxidation and densification, thereby forming a porosity of 70%. The total number of deposition cycles is controlled at 1600 cycles, and the thickness is 140±20nm.

[0139] Example 9 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the porosity of the second porous layer 223 is 80%.

[0140] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: the deposition conditions of the second porous layer 223 are as follows: the total plasma power is kept constant at 350W, the proportion of argon (Ar) in the mixed gas is further increased, the flow ratio of Ar to O2 is set to 4:1 (Ar=40sccm, O2=10sccm), and the physical bombardment etching effect is enhanced by high concentration of Ar plasma, which significantly inhibits the oxidation densification process and removes more deposited material, thereby forming a high porosity of 80%, the total number of deposition cycles is controlled at 1600 cycles, and the thickness is 140±20nm.

[0141] Example 10 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the porosity of the second porous layer 223 is 85%.

[0142] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: the deposition conditions of the second porous layer 223 are as follows: the total plasma power is kept constant at 350W, the proportion of argon in the mixed gas is further increased, the flow ratio of Ar to O2 is set to 5:1 (Ar=50sccm, O2=10sccm), and strong physical bombardment etching is performed using extremely high concentration Ar plasma to maximize the removal of deposited skeleton material, thereby forming an ultimate high porosity of 85%, the total number of deposition cycles is controlled at 1600 cycles, and the thickness is 140±20nm.

[0143] Example 11 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the pore size of the first porous layer 221 and the second porous layer 223 is 10 nm.

[0144] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: TEOS is used as the precursor, O3 is used as the oxidant, and Ar / O2 plasma is simultaneously introduced for micro-etching. The total plasma power is controlled at 150W. During the deposition process, the Ar flow rate is kept constant at 10 sccm, and the O2 flow rate is linearly increased from 5 sccm in the initial stage to 30 sccm in the final stage (i.e., the Ar:O2 ratio changes from 2:1 to 1:3). By continuously increasing the O2 flow rate, the chemical etching effect is enhanced, and the nanoporosity inside the film layer gradually changes from low porosity near the bonding layer to high porosity near the stress buffer barrier layer, while the pore size is controlled at 10 nm. The total number of deposition cycles was adjusted to 1500 cycles, and the thickness was 120±15nm. The deposition conditions for the second porous layer 223 were: TEOS / O3 precursor, simultaneous introduction of Ar / O2 plasma for micro-etching, plasma power controlled at 150W, Ar:O2=1:3 (Ar=10sccm, O2=30sccm), thereby controlling the pore size at 10nm, the total number of deposition cycles was adjusted to 1600 cycles, and the thickness was 140±20nm.

[0145] Example 12 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the pore size of the first porous layer 221 and the second porous layer 223 is 20nm.

[0146] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: a TEOS / O3 precursor is simultaneously introduced into Ar / O2 plasma for micro-etching, the plasma power is controlled at 200W, and the Ar flow rate is kept constant at 20. The first porous layer 223 was deposited under the following conditions: The O2 flow rate was linearly increased from 5 sccm at the beginning stage to 10 sccm at the end stage (i.e., the Ar:O2 ratio changed from 4:1 to 2:1) to achieve a gradual change in porosity, forming a nanoporous structure with a pore size of approximately 20 nm. The total number of deposition cycles was controlled at 1500 cycles, and the thickness was 120±15 nm. The second porous layer 223 was deposited under the following conditions: TEOS / O3 precursor, Ar / O2 plasma was simultaneously introduced for micro-etching, the plasma power was controlled at 200 W, and the Ar to O2 gas flow rate ratio was adjusted to 2:1 (Ar=20 sccm, O2=10 sccm) to form a nanoporous structure with a pore size of approximately 20 nm. The total number of deposition cycles was controlled at 1600 cycles, and the thickness was 140±20 nm.

[0147] Example 13 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the pore size of the first porous layer 221 and the second porous layer 223 is 40nm.

[0148] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: a TEOS / O3 precursor is introduced into Ar / O2 plasma for micro-etching, the plasma power is controlled at 300W, and the O2 flow rate is linearly increased from 5 sccm in the initial stage to 10 sccm in the final stage (i.e., the Ar:O2 ratio changes from 8:1 to 4:1) to achieve a gradual change in porosity, forming a nanoporous structure with a pore size of approximately 40nm, the total number of deposition cycles is controlled at 1500 cycles, and the thickness is 120±15nm; the deposition conditions for the second porous layer 223 are: a TEOS / O3 precursor is introduced into Ar / O2 plasma for micro-etching, the plasma power is controlled at 300W, the Ar / O2 gas flow rate ratio is adjusted to 4:1 (Ar=40sccm, O2=10sccm), forming a nanoporous structure with a pore size of approximately 40nm, the total number of deposition cycles is controlled at 1600 cycles, and the thickness is 140±20nm.

[0149] Example 14 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that the pore size of the first porous layer 221 and the second porous layer 223 is 50nm.

[0150] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that: a TEOS / O3 precursor is introduced into Ar / O2 plasma for micro-etching, the plasma power is increased to 400W, and the O2 flow rate is linearly increased from 5 sccm in the initial stage to 10 sccm in the final stage (i.e., the Ar:O2 ratio changes from 10:1 to 5:1) to achieve a gradual change in porosity, forming a nanoporous structure with a pore size of approximately 50 nm, the total deposition cycle number is controlled at 1500 cycles, and the thickness is 120±15 nm; the deposition conditions for the second porous layer 223 are: a TEOS / O3 precursor is introduced into Ar / O2 plasma for micro-etching, the plasma power is increased to 400W, the gas flow rate ratio of Ar to O2 is adjusted to 5:1 (Ar=50 sccm, O2=10 sccm), forming a nanoporous structure with a pore size of approximately 50 nm, the total deposition cycle number is controlled at 1600 cycles, and the thickness is 140±20 nm.

[0151] Example 15 This embodiment provides a coated wave-transparent component, which has a structure similar to that of Embodiment 1.

[0152] This embodiment also provides a method for preparing the coated wave-transparent component, which differs from Embodiment 1 in that it does not include the FAS sealing step.

[0153] Example 16 This embodiment provides a coated wave-transparent component, which differs from Embodiment 1 in that a conventional thermally grown silicon dioxide layer (fluorine-free, refractive index 1.46-1.47) is used instead of fluorine-doped silicon dioxide as the bonding layer.

[0154] Comparative Example 1 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that a commercial AR film is used instead of the wave-transparent film layer, and the thickness of the commercial AR film is 120nm.

[0155] This comparative example also provides a method for preparing the coated wave-transparent component, which differs from Example 1 in that a SiO2 / TiO2 multilayer AR film is prepared by magnetron sputtering.

[0156] Comparative Example 2 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that a non-porous SiO2 monolayer film is used instead of the wave-transparent film layer, and the thickness of the non-porous SiO2 monolayer film is 400 nm.

[0157] This comparative example also provides a method for preparing the coated wave-transparent component, which differs from Example 1 in that a dense SiO2 film is prepared using the PEALD process.

[0158] Comparative Example 3 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that a Murata hollow LCP film is used instead of the wave-transparent film layer, and the thickness of the Murata hollow LCP film is 80 μm.

[0159] Comparative Example 4 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that a DuPont Kapton HN polyimide film is used instead of the wave-transparent film layer, and the thickness of the DuPont Kapton HN polyimide film is 50 μm.

[0160] The performance of the coated wave-transparent components of Examples 1-14 and Comparative Examples 1-4 is shown in Tables 1 and 2 below.

[0161] Table 1

[0162] Table 2

[0163] As can be seen from the experimental results in Tables 1 and 2, the coated wave-transparent component of the present invention is significantly superior to the comparative example in terms of dielectric properties, wave transmittance and mechanical properties. In particular, its tanδ index is one order of magnitude lower than that of LCP film and polyimide film, which can reduce the attenuation of 6G signal by more than 60%.

[0164] Table 3

[0165] The comparison between Example 1 and Example 15 shows that the MgF2 layer may still have nanoscale micropores or surface defects during the deposition process. The MgF2 without FAS treatment has a high surface energy (contact angle ~85°) and cannot achieve good hydrophobic and oleophobic properties. In a humid environment, water molecules will be adsorbed into the surface micropores through capillary action and may even slowly permeate. These adsorbed waters cause significant losses in the terahertz frequency band, leading to an increase in tanδ and a decrease in transmittance. FAS sealing forms low surface energy fluorocarbon chains on the MgF2 surface through chemical bonding, increasing the contact angle to >110° and achieving the "lotus effect," which completely prevents water molecule adsorption, thereby suppressing tanδ to an extremely low level (0.0041).

[0166] Similarly, in this embodiment, the MgF2 layer without FAS treatment (contact angle ~85°) under this process condition is not a strictly hydrophobic and oleophobic layer. The MgF2 layer after FAS treatment increases the contact angle to >110°. At this time, the magnesium fluoride hydrophobic and oleophobic layer and the in-situ sealing treatment have a synergistic effect. MgF2 provides basic physical barrier, while FAS sealing imparts superhydrophobicity to the surface through chemical modification, together ensuring the low loss performance of the film layer in complex environments.

[0167] Experimental data fully demonstrate that this invention successfully suppresses dipole relaxation loss in the 6 GHz terahertz band through a dual synergistic mechanism of pulse annealing and in-situ sealing. The loss tangent (tanδ) is stably controlled below 0.005, meeting the stringent requirements of 6G communication for low-loss transparent materials.

[0168] The comparison between Example 1 and Example 16 shows that the transmittance of Example 16 decreased by 2-3% across the entire frequency band, especially at higher frequencies (10THz), where the decrease was more pronounced. Due to the lack of fluorine passivation, tanδ increased from 0.0041 to 0.0052. It can be seen that while the mechanical properties were not significantly affected by using ordinary silica instead of fluorine-doped silica as the bonding layer, the electromagnetic properties decreased. Because the refractive index of ordinary silica is higher than that of fluorine-doped silica, the refractive index gradient matching between the substrate and the film layer deteriorated, increasing interface reflection and causing the transmittance in the 10THz frequency band to decrease from 88.50% to 85.20%. Residual hydroxyl groups and defects in the ordinary silica network generated dipole relaxation losses in the terahertz frequency band, leading to an increase in the loss tangent.

[0169] Comparative Example 5 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that it does not contain the stress-buffering barrier layer 222.

[0170] Comparative Example 6 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that it does not contain a hydrophobic and oleophobic layer 23.

[0171] Comparative Example 7 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that it does not contain the first porous layer 221.

[0172] Comparative Example 8 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that it does not contain a second porous layer 223.

[0173] Comparative Example 9 This comparative example provides a coated wave-transparent component, which differs from Example 1 in that it does not contain the bonding layer 21.

[0174] The performance of the coated wave-transparent components of Comparative Examples 5-9 is shown in Table 4 below.

[0175] Table 4

[0176] A comparison between Example 1 and Comparative Example 5 shows that the tanδ of Comparative Example 5 soared to 0.0185 (more than 4 times the standard), and the nanoindentation hardness dropped to 2.15 GPa. This indicates that the stress buffer barrier layer was lost, allowing ambient moisture to directly penetrate into the second porous layer. Due to the extremely high dielectric loss of water molecules in the terahertz band, tanδ increased dramatically. Furthermore, the lack of rigid support in the first and second porous layers resulted in a significant decrease in the overall mechanical strength of the film, leading to a significant reduction in nanoindentation hardness and pencil hardness (from 6H to 4H, making it easily scratched). The decrease in transmittance may be due to impedance mismatch caused by the change in dielectric constant after moisture absorption.

[0177] A comparison between Example 1 and Comparative Example 6 shows that the tanδ of Comparative Example 6 increased to 0.0120, and the transmittance in the high-frequency band (10THz) decreased significantly. This indicates that without a hydrophobic and oleophobic layer, the highly porous second layer is directly exposed on the surface. Its large specific surface area makes it highly susceptible to adsorbing water molecules and oil from the air, leading to strong dipole relaxation loss in the high-frequency band due to the adsorbed water layer, which is directly reflected in the increased tanδ.

[0178] A comparison of Example 1 and Comparative Example 7 shows that the transmittance of Comparative Example 7 decreased significantly across the entire frequency band (from 0.3 THz to 84.5%), while tanδ increased slightly. This indicates that the absence of the first porous layer leads to a discontinuity in refractive index between the substrate and subsequent layers, resulting in severe interface reflection. According to the Fresnel equation, increased reflection loss directly leads to a decrease in transmittance, especially noticeable in the low-frequency range (where wavelengths are longer and more sensitive to interfaces); additionally, stress concentration may cause microcracks, slightly increasing the loss.

[0179] As can be seen from the comparison between Example 1 and Comparative Example 8, the dielectric constant ε of Comparative Example 8 soared to 3.25 (far exceeding the requirement of 2.6), while other indicators were acceptable. This indicates that without the second porous layer, the effective dielectric constant of the overall film layer could not be reduced. Although the transmittance and loss effect were acceptable due to the density of the material itself, it could not meet the core indicator requirement of low dielectric constant for 6G radomes, resulting in excessive signal phase delay and communication failure.

[0180] A comparison between Example 1 and Comparative Example 9 shows that Comparative Example 9 exhibits decreased transmittance, decreased nanoindentation hardness (4.8 GPa), and a pencil hardness of 4H. Furthermore, due to the direct bonding between the substrate and the first porous layer, the interfacial adhesion is weak, resulting in poor film adhesion and easy peeling during hardness testing. Secondly, the abrupt change in interfacial refractive index leads to partial reflection and decreased transmittance; additionally, the lack of fluorine doping during the transition may increase the local field strength at the interface, resulting in a slight increase in loss.

[0181] Experimental data fully demonstrate that the five-layer gradient structure and the synergistic effect of the functional parameters of each layer proposed in this invention are an effective way to achieve low dielectric, low loss, high transmission and high reliability in 6G.

[0182] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A coated wave-transparent component, characterized in that, include: Base; A wave-transparent film layer is deposited on the substrate; along the direction away from the surface of the substrate, the wave-transparent film layer sequentially includes a bonding layer, at least one porous structure layer, and a hydrophobic and oleophobic layer; In this structure, each porous layer, from the bonding layer toward the hydrophobic and oleophobic layer, sequentially includes a first porous layer, a stress buffer barrier layer, and a second porous layer. The porosity of the first porous layer gradually increases along its thickness direction from the side near the bonding layer to the side near the stress buffer barrier layer. The minimum porosity of the first porous layer is 15%-25%, and the maximum porosity is 40%-55%. The porosity of the second porous layer is 60%-85%.

2. The coated wave-transparent component according to claim 1, characterized in that, The difference between the maximum and minimum porosity of the first porous layer is 15%-30%.

3. The coated wave-transparent component according to claim 1 or 2, characterized in that, The pore sizes of the first porous layer and the second porous layer are each independently 10-50 nm; Preferably, the thickness of the first porous layer is 100-150 nm; the thickness of the second porous layer is 120-180 nm. Preferably, the materials of the first porous layer and the second porous layer are each independently selected from one or more of silicon dioxide, aluminum oxide, or silicon carbide.

4. The coated wave-transparent component according to claim 1, characterized in that, The stress buffer barrier layer meets any or all of the following performance indicators: Young's modulus ≥ 150 GPa; hardness ≥ 10 GPa; water vapor transmission rate < 1 × 10⁻⁶ -6 g·m -2 ·day -1 Density > 95%; Preferably, the material of the stress buffer barrier layer is selected from one or more of silicon nitride, aluminum oxide, titanium oxide, or hafnium oxide; Preferably, the thickness of the stress buffer barrier layer is 50-80 nm.

5. The coated wave-transparent component according to claim 1, characterized in that, The thickness of the bonding layer is 80-120 nm; the material of the bonding layer is selected from one or more of fluorine-doped silicon oxide or fluorine-doped silicon dioxide network materials; preferably, the doping amount of fluorine in the bonding layer is 3-5 at.

6. The coated wave-transparent component according to claim 1, characterized in that, The water contact angle of the hydrophobic and oleophobic layer is ≥105°; Preferably, the material of the hydrophobic and oleophobic layer is selected from one or more of magnesium fluoride, calcium fluoride, fluoropolymers, or fluorinated silica; Preferably, the thickness of the hydrophobic and oleophobic layer is 60-100 nm.

7. The coated wave-transparent component according to any one of claims 1, 2, 4-6, characterized in that, The coated wave-transparent component satisfies at least one of the following characteristics (1)-(3): (1) The transmittance at 0.3THz, 3THz and 10THz is ≥92%, ≥89% and ≥86%, respectively; (2) The dielectric constant ε of the coated wave-transparent component is less than 2.6; (3) The loss tangent tanδ of the coated wave-transparent component is less than 0.005; Preferably, the nanoindentation hardness of the coated wave-transparent component is ≥5.0 GPa; the pencil hardness of the coated wave-transparent component is ≥6H.

8. The method for preparing the coated wave-transparent component according to any one of claims 1-7, characterized in that, Includes the following steps: A bonding layer, at least one porous structure layer, and a hydrophobic and oleophobic layer are sequentially deposited on the substrate; wherein, when depositing each porous structure layer, a first porous layer, a stress buffer barrier layer, and a second porous layer are sequentially deposited. Preferably, a wave-transparent film layer is formed by plasma-enhanced atomic layer deposition, and plasma micro-etching is used to control the pore distribution when depositing the first porous layer and the second porous layer.

9. The method for preparing the coated wave-transparent component according to claim 8, characterized in that, The process also includes the following steps: sequentially annealing and sealing the sample after depositing the hydrophobic and oleophobic layer; Preferably, the annealing process includes alternating rapid hot annealing and slow cooling annealing; the rapid hot annealing is performed by heating to 350-450℃ at a heating rate of 40-60℃ / s and annealing for 20-40s; the slow cooling annealing is performed by annealing at 200-300℃ for 90-150s. Preferably, the pore-sealing strengthening treatment involves reacting the annealed sample with a pore-sealing strengthening agent at 60-80°C for 10-20 minutes; the pore-sealing strengthening agent is selected from one or more of 1H,1H,2H,2H-perfluorooctyltriethoxysilane, perfluorodecyltriethoxysilane, or perfluorononyltriethoxysilane.

10. The application of the coated wave-transparent component according to any one of claims 1-7 or the coated wave-transparent component prepared by the preparation method according to claim 8 or 9 in a 6G communication terminal device.

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