Gas mixing device and chemical vapor deposition apparatus

Abstract

The application discloses a kind of mixing gas device and chemical vapor deposition equipment, the mixing gas device includes main pipeline, the inside of the main pipeline is provided with gas passage, the side wall of the main pipeline is provided with and the side surface gas inlet of the gas passage intercommunication, the side surface gas inlet and the gas passage between there is flow guide structure, the flow guide structure includes flow guide slope, the flow guide slope from the side surface gas inlet to the gas passage is inclined and extends, and the side wall in the main pipeline forms the flow guide space of gradually expanding caliber.The flow guide space of gradually expanding caliber by being provided with flow guide slope, eliminates the flow dead zone of the side surface gas inlet, so that purge gas more easily enters the vicinity of side surface gas inlet, realizes the effective replacement to residual gas, and then improves film deposition uniformity.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and in particular to a gas mixing device and a chemical vapor deposition device. Background Technology

[0002] Atomic Layer Deposition Tungsten (ALDW) is widely used in semiconductor manufacturing, employing alternating reactive gas introduction and utilizing a surface self-limiting reaction mechanism. Current ALDW processes typically employ a cyclical sequence of "H2dose → Ar purge → WF6 dose → Ar purge," relying on the purge gas to completely remove residual gases to ensure the self-limiting reaction proceeds.

[0003] However, the ALDW process requires rapid, large-volume gas exchange. If the gas channels cannot complete the gas exchange quickly enough, incomplete gas replacement will occur, leading to residual gases coming into contact with each other and triggering a chemical vapor deposition reaction. This results in defects such as increased thin film resistivity, poor uniformity, and reduced structural filling. Therefore, how to improve gas replacement efficiency to avoid chemical vapor deposition reactions is a technical problem that urgently needs to be solved by those skilled in the art.

[0004] The statements herein provide only background information in relation to this invention and do not necessarily constitute prior art. Summary of the Invention

[0005] The purpose of this invention is to provide a gas mixing device and a chemical vapor deposition equipment to reduce gas flow dead zones, improve the efficiency of gas transport and replacement, avoid residual gas from undergoing chemical vapor deposition reactions in the gas flow dead zones, and thereby improve the uniformity of thin film deposition.

[0006] To achieve the above objectives, the present invention provides a gas mixing device for chemical vapor deposition equipment, comprising a main pipeline, wherein a gas channel is provided inside the main pipeline, and a side air inlet communicating with the gas channel is provided on the side wall of the main pipeline. A flow guiding structure is provided between the side air inlet and the gas channel, the flow guiding structure including a flow guiding slope, the flow guiding slope extending obliquely from the side air inlet toward the gas channel, forming a flow guiding space with a gradually widening diameter within the side wall of the main pipeline.

[0007] In one embodiment, the flow guiding structure further includes a connecting section located between the side air inlet and the flow guiding slope, the connecting section being a straight hole extending along a first direction, the first direction being a direction perpendicular to the axis of the gas channel.

[0008] In one embodiment, the ratio of the depth of the connecting segment in the first direction to the width of the connecting segment in the second direction is in the range of 0.02 to 0.5, and the second direction is a direction parallel to the axis of the gas channel.

[0009] In one embodiment, the width of the connecting segment in the second direction is less than or equal to 50 mm, and the depth of the connecting segment in the first direction ranges from 1 mm to 25 mm.

[0010] In one embodiment, the angle between the guide slope and the axis of the gas channel is an acute angle.

[0011] In one embodiment, the angle between the guide slope and the axis of the gas channel ranges from 10° to 45°.

[0012] In one embodiment, a pairing flow guiding structure is further provided on the side wall of the main pipeline, and the pairing flow guiding structure is arranged opposite to the flow guiding structure along the axis of the gas channel.

[0013] In one embodiment, the mixing device further includes an isolation valve disposed at the side air inlet for opening or closing the side air inlet.

[0014] In one embodiment, the gas mixing device further includes a clean gas pipeline connected to the side air inlet for introducing clean gas into the gas channel, and the isolation valve is located between the clean gas pipeline and the side air inlet.

[0015] The present invention also provides a chemical vapor deposition apparatus, comprising: a reaction chamber, wherein an air inlet channel is provided on the top cover of the reaction chamber; a gas mixing device as described above is provided above the top cover, and the outlet of the gas channel inside the main pipeline is connected to the air inlet channel; a gas spray head is disposed below the top cover and communicates with the air inlet channel for conveying gas; and a base is located at the lower part of the reaction chamber and is disposed opposite to the gas spray head for supporting a substrate.

[0016] In one embodiment, the gas inlet inside the main pipeline is connected to a process gas source, and the side inlet is connected to a remote plasma source via a cleaning gas pipeline.

[0017] Compared with existing technologies, the gas mixing device and chemical vapor deposition equipment provided by this invention have at least the following beneficial effects: By setting a gradually expanding guide space with a guide slope between the side air inlet and the gas channel, the dead zone of airflow present in the side air inlet in the prior art is eliminated. When the purge gas is delivered downward from the gas channel, it can more easily enter the side space of the side air inlet and fully replace the residual process gas, avoiding the CVD side reaction caused by the contact between the residual process gas and the subsequent process gas, thereby reducing the thin film resistivity and ensuring the step coverage and fill rate. Furthermore, by setting an approximately symmetrical paired guide structure, the flow field interference of the single-sided air inlet structure on the gas channel is eliminated, making the flow field distribution more uniform and improving the uniformity of the thin film thickness. Attached Figure Description

[0018] Figure 1 A schematic cross-sectional view of a gas mixing device; Figure 2 This is a schematic diagram of non-uniformity of wafer thin-film resistors; Figure 3 This is a cross-sectional schematic diagram of a gas mixing device according to the present invention; Figure 4 This is a cross-sectional schematic diagram of another gas mixing device according to the present invention; Figures 5-6 This is a cross-sectional schematic diagram of some other gas mixing devices of the present invention; Figure 7 This is a schematic diagram of the non-uniformity of wafer thin-film resistance using the gas mixing device of the present invention; Figure 8 This is a schematic diagram of a chemical vapor deposition apparatus according to the present invention. Detailed Implementation

[0019] The gas mixing device and chemical vapor deposition equipment proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clarify the illustration of the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0020] like Figure 1 As shown, Figure 1 A gas mixing device includes a first conduit 10 for introducing process gas and purge gas, and a second conduit 20 for introducing cleaning gas. The second conduit 20 is vertically connected to a side opening of the first conduit 10. However, a dead zone 11 is easily formed at the vertical connection between the second conduit 20 and the side wall of the first conduit 10, making it difficult for the process gas entering the dead zone 11 to be effectively purged and replaced. When the residual process gas comes into direct contact with the subsequently introduced process gas, a chemical vapor deposition (CVD) reaction occurs, resulting in increased resistivity of the deposited film, defects such as edge deviation in film thickness, and poor step coverage and fill rate.

[0021] To address the airflow dead zone caused by the side air intake of the cleaning pipeline connected vertically to the process pipeline, such as... Figure 3 As shown, an embodiment of the present invention provides a gas mixing device 200 for chemical vapor deposition equipment (such as CVD, ALD, or MOCVD equipment). The gas mixing device 200 includes a main pipeline 201, inside which a gas channel 211 extending along its axis AA is provided. During the process, process gas and purge gas can flow axially along the gas channel 211 and be transmitted to a gas spray head located at the top of the reaction chamber. A side inlet 213 communicating with the gas channel 211 is provided on the side wall 212 of the main pipeline 201, and this side inlet 213 is used to transmit cleaning gas into the gas channel 211. A flow guiding structure 202 is provided between the side air inlet 213 and the gas passage 211. The flow guiding structure 202 includes a flow guiding slope 221, which extends obliquely from the side air inlet 213 towards the gas passage 211, thereby forming a gradually expanding flow guiding space 222 within the side wall 212 of the main pipeline 201. That is, the diameter of the flow guiding space 222 is smaller at the end near the side air inlet 213 and larger at the end near the gas passage 211, making the flow guiding space 222 gradually expanding. Figure 3 In the illustrated embodiment, the guide slope 221 is a straight slope, and the guide space 222 is a frustum-shaped cavity. In other embodiments, the guide slope 221 may also be a curved slope, and the guide space 222 may be a funnel-shaped cavity; the specific form is not specifically limited here.

[0022] During the process purging stage, the purging gas flows at high speed along the gas channel 211. When the purging gas flows through the inlet area of ​​the guide space 222, according to the entrainment effect in fluid mechanics, the high-speed airflow generates a negative pressure suction force in the direction of the side inlet 213, causing the purging gas in the gas channel 211 to be drawn into the guide space 222. Simultaneously, because the inlet of the guide space 222 adopts a gradually expanding design, it effectively reduces the local resistance when the airflow converges, allowing the purging gas to enter and fill the guide space 222 more smoothly, thereby enhancing the purging and replacement efficiency of the guide space 222. The process gas remaining in the guide space 222 can be effectively replaced and carried away by the purging gas, eliminating the airflow dead zone 11 formed near the side inlet due to airflow stagnation. By eliminating the airflow dead zone, CVD side reactions and particulate contaminants caused by residual gas near the side inlet 213 are avoided, thereby improving the film quality and the uniformity of film thickness.

[0023] In another embodiment, since the side air inlet 213 typically needs to be flanged to the external clean gas pipeline 204, in order to improve the connection strength at the side air inlet 213 and avoid deformation or leakage of the side wall 212 of the main pipeline 201 due to pipeline stress, this embodiment further optimizes the flow guiding structure 202 based on the above embodiment. For example... Figure 4 As shown, the flow guiding structure 202 also includes a connecting section 223 located between the side air inlet 213 and the flow guiding slope 221. The connecting section 223 is a straight hole extending along a first direction 205, which is perpendicular to the axis AA of the gas passage 211. By providing the straight connecting section 223, a sufficiently strong and flat sealing connection surface is provided for the clean gas pipeline 204 located outside the main pipeline 201, improving the connection strength and sealing reliability of the side air inlet 213. Specifically, the connecting section 223 can be a circular hole, such as... Figure 4 As shown in the cross section, the connecting segment 223 has a rectangular cross section.

[0024] Furthermore, since the cross-sectional dimensions of the connecting segment 223 affect the gas flow state within the gas channel 211 and the displacement efficiency at the side air inlet 213, this embodiment limits the proportional relationship and numerical range of the dimensions of the connecting segment 223. Specifically, the depth of the connecting segment 223 in the first direction 205 is H (i.e., the radial dimension of the rectangular cross-section), and the width of the connecting segment 223 in the second direction 206 is L (i.e., the axial dimension of the rectangular cross-section). The second direction 206 is parallel to the axis AA of the gas channel 211. In this embodiment, the ratio of the depth H to the width L of the connecting segment 223 ranges from 0.02 to 0.5. Compared to Figure 1 In In cases where the value is as high as 1.3, the present invention will The value is significantly reduced, decreasing the diffusion space depth of the purge gas within the side wall of the main pipeline 201. When the purge gas flows within the gas channel 211, on the one hand, the gradually widening guide space 222 makes it easier for the purge gas to enter the vicinity of the side air inlet 213; on the other hand, the shallower connecting section 223 allows the purge airflow to quickly carry away the residual gas in this area, avoiding the retention of residual gas.

[0025] Specifically, when When the depth H of the connecting section 223 in the first direction 205 is less than its width L in the second direction 206, it effectively prevents the connecting section 223 from forming a dead zone at the bottom that the purging gas cannot reach due to excessive depth. This allows the purging gas to enter quickly and replace and carry away the residual process gas, enhancing the efficiency of gas transmission and replacement. This ensures that the connecting section 223 has sufficient depth in the first direction 205 to meet the structural requirements for connection strength and sealing. By limiting the aforementioned size ratios, the potential deep-hole airflow dead zone near the side air inlet is eliminated, avoiding CVD side reactions caused by the airflow dead zone, thereby improving the uniformity of thin film deposition. As an optional embodiment, the width L of the connecting section 223 in the second direction 206 is less than or equal to 50 mm, and the depth H of the connecting section 223 in the first direction 205 ranges from 1 mm to 25 mm. Within this size range, it avoids the side air inlet 213 being too large, which would cause gas flow field deviation, reduces the volume compression of the airflow dead zone, and simultaneously ensures the connection strength and sealing reliability between the side air inlet 213 and the clean gas pipeline 204.

[0026] In any of the above embodiments, such as Figure 3 and Figure 4 As shown, the angle between the guide slope 221 and the axis AA of the gas channel 211 It is an acute angle. For example, the included angle... The range is 10° to 45°. When the included angle... If the angle is too small (e.g., less than 10°), the inclination angle of the cross-section of the guide space 222 will be too large. Due to inertia, the purging airflow is prone to generate local vortices at the side air inlet 213, disrupting the smoothness of airflow transmission and reducing transmission efficiency. When the angle is too small... When the angle is too large (e.g., greater than 45°), the inclination angle of the cross-section of the guide space 222 is too small, resulting in an excessively large corner on the guide slope. This prevents the purging gas from entering the guide space 222, thus reducing the replacement efficiency. By adjusting the included angle... By limiting the angle to the above range, the purge gas can more easily enter the area near the side air inlet, effectively replacing the residual gas and thus improving the uniformity of film deposition.

[0027] The inventors also discovered that a single-sided intake pipe affects the flow field distribution of the process gas output from the mixing device, causing a shift in the flow field within the reaction chamber. This asymmetry in the flow field manifests in offline testing as a special morphology where the thin-film resistor or thickness on the wafer shows an off-center edge (e.g., Figure 2 As shown), this leads to a deterioration in resistivity nonuniformity (RSU), for example in... Figure 1 The resistance nonuniformity (RSU) of the existing structure shown is 3.93%.

[0028] Therefore, based on the above embodiments, in order to eliminate the influence of unilateral air intake on the overall flow field symmetry, in some other embodiments of the present invention, such as... Figure 5 As shown, a paired flow guide structure 302 is provided on the side wall 212 of the main pipeline 201 opposite to the side air inlet 213. The paired flow guide structure 302 and the flow guide structure 202 are arranged opposite each other along the axis AA of the gas channel 211 and have similar shapes. The paired flow guide structure 302 includes a paired flow guide space 322 with a shape approximately the same as the flow guide space 222 of the flow guide structure 202. It can be understood that the paired flow guide structure 302 is not continuous, and the side wall 212 at its location still retains thickness. Therefore, the paired flow guide structure 302 and the flow guide structure 202 are opposite each other and have similar shapes, but are not completely symmetrical.

[0029] Correspondingly, Figure 6 The paired flow guiding structure 402 includes a paired flow guiding space 422 and a paired flow guiding section 423, which are similar in shape to the flow guiding space 222 and the connecting section 223. It is understood that the paired flow guiding structure is not directly connected to the clean gas pipeline; that is, the paired flow guiding structure is not used for gas intake. Setting the paired flow guiding structure on the side wall 212 of the main pipeline 201 can play a symmetrical guiding role in the flow field, making the purge airflow distribution within the gas channel 211 more symmetrical, thereby solving the edge deviation problem caused by a single-sided pipeline space. Compared with existing designs, this significantly improves the uniformity of thin film deposition, such as... Figure 7 As shown, a gas mixing device with a flow guiding structure and a paired flow guiding structure is used for thin film deposition process, which reduces the resistivity non-uniformity (RSU) of the formed thin film to 2.15% and improves the uniformity of the film deposition thickness.

[0030] Because fluorinated cleaning gases such as NF3 can corrode stainless steel pipelines, cleaning gas pipelines must be separated from process gas pipelines. Figure 3 As shown, the gas mixing device in this embodiment of the invention further includes a clean gas pipeline 204, which is connected to a side air inlet 213 for introducing clean gas (such as NF3) into the gas channel 211. The process gas and purge gas enter from directly above the gas channel 211, thereby achieving physical isolation between corrosive gases and non-corrosive process / purge gases.

[0031] Furthermore, an isolation valve 241 is provided between the clean gas pipeline 204 and the side air inlet 213 to open or close the side air inlet 213. During the process stage, the isolation valve 241 is in the closed state to prevent process gas from flowing back into the clean pipeline; during the cleaning stage, the isolation valve 241 is in the open state, and clean gases such as NF3 enter the gas channel 211 through the guide structure 202, and are then transmitted to the reaction chamber through the gas channel 211.

[0032] Accordingly, embodiments of the present invention also provide a chemical vapor deposition apparatus, such as... Figure 8 As shown, the chemical vapor deposition apparatus 500 includes a reaction chamber 501, which provides a sealed space for thin film deposition reactions on the substrate surface. A through-hole gas inlet channel 521 is provided on the top cover 502 of the reaction chamber 501 for supplying gas into the reaction chamber; a gas mixing device (in this embodiment, a gas mixing device is fixedly installed above the top cover 502)... Figure 3 (Taking the gas mixing device 200 as an example), the outlet 211b of the gas channel 211 inside the main pipeline 201 is sealed to the inlet channel 521 on the top cover 101 through a connection method such as a flange, sealing sleeve, or welding to ensure the airtightness of the gas transmission path. Below the top cover 502, a gas spray head 503 is provided inside the reaction chamber 501. The gas spray head 503 is connected to the inlet channel 521 on the top cover 502 and is used to uniformly deliver gas to the reaction area below. At the lower part of the reaction chamber 501, opposite to the gas spray head 503, a base 504 is provided to support the substrate to be processed.

[0033] In some embodiments, such as Figure 8 As shown, the inlet 211a (i.e., the inlet end) of the gas channel 211 inside the main pipeline 201 is connected to the process / purge gas source 505, and the side inlet 213 is connected to the remote plasma source 506 through the clean gas pipeline 204. The clean free radicals generated by the remote plasma source 506 enter the gas channel 211 in sequence through the clean gas pipeline 204, the side inlet 213 and the guide structure 202, and are transported to the gas spray head 203 along the gas channel 211 and the inlet channel 521.

[0034] In one specific embodiment, combined with Figure 3 and Figure 8As shown, taking the ALDW process as an example, the working process of the chemical vapor deposition equipment of the present invention is described in detail: In the process stage, the isolation valve 241 is closed, and process gases such as H2 and / or WF6 are output from the process / purge gas source 505, enter from the inlet 211a of the gas channel 211 and are transported downward; subsequently, Ar gas, as the purge gas, also enters from the inlet 211a of the gas channel 211 and flows downward. When the Ar purge gas flows through the area where the side inlet 213 is located, due to the guide slope 221 forming a gradually expanding guide space 222, the downward purge gas can easily enter the guide space, carrying away and replacing the process gas that may remain near the side inlet 213, eliminating the airflow dead zone, and avoiding the contact between the residual gas and the subsequent process gas to cause CVD side reactions. During the cleaning phase, the isolation valve 241 is opened, and the fluorine-containing cleaning gas generated by the remote plasma source 506 enters the side air inlet 213 from the cleaning gas pipeline 204. The cleaning gas smoothly flows into the gas channel 211 along the guide slope 221, and then flows downward through the air inlet channel 521 and the gas spray head 503 into the reaction chamber 501 for cleaning.

[0035] In summary, the gas mixing device and chemical deposition equipment provided by this invention eliminate the airflow dead zone present in the side air inlet in the prior art by setting a gradually expanding guide space 222 with a guide slope 221 between the side air inlet 213 and the gas channel 211. When the purge gas is delivered downward from the gas channel 211, it can more easily enter the side space of the side air inlet 213 and fully replace the residual process gas, avoiding CVD side reactions caused by contact between the residual process gas and the subsequent process gas, thereby reducing the thin film resistivity and ensuring the step coverage and fill rate.

[0036] Furthermore, by setting a paired flow guiding structure, the interference of the single-sided air intake structure on the flow field of the gas channel 211 is eliminated, making the flow field distribution more uniform. Experimental data show that when using the existing straight pipe side vertical air intake structure, the wafer thin film resistance non-uniformity RSU is 3.93%, with obvious edge defects; while after adopting the flow guiding structure with gradually expanding diameter of the present invention, the wafer thin film resistance non-uniformity RSU is reduced to 2.15%, improving the uniformity of the film thickness.

[0037] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0038] In the description of this invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0039] In the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0040] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0041] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas mixing device for use in a chemical vapor deposition (CVD) apparatus, characterized in that, The system includes a main pipeline with a gas channel inside. The side wall of the main pipeline has a side air inlet communicating with the gas channel. A flow guiding structure is provided between the side air inlet and the gas channel. The flow guiding structure includes a flow guiding slope that extends obliquely from the side air inlet toward the gas channel, forming a flow guiding space with a gradually widening diameter within the side wall of the main pipeline.

2. The gas mixing device as described in claim 1, characterized in that, The flow guiding structure further includes a connecting section located between the side air inlet and the flow guiding slope. The connecting section is a straight hole extending along a first direction, which is perpendicular to the axis of the gas channel.

3. The gas mixing device as described in claim 2, characterized in that, The ratio of the depth of the connecting segment in the first direction to the width of the connecting segment in the second direction is in the range of 0.02 to 0.5, where the second direction is a direction parallel to the axis of the gas channel.

4. The gas mixing device as described in claim 3, characterized in that, The width of the connecting segment in the second direction is less than or equal to 50 mm, and the depth of the connecting segment in the first direction ranges from 1 mm to 25 mm.

5. The gas mixing device as described in claim 1 or 2, characterized in that, The angle between the guide slope and the axis of the gas channel is an acute angle.

6. The gas mixing device as described in claim 5, characterized in that, The angle between the guide slope and the axis of the gas channel ranges from 10° to 45°.

7. The gas mixing device as described in claim 1 or 2, characterized in that, The side wall of the main pipeline is also provided with a pairing flow guiding structure, which is arranged opposite to the flow guiding structure along the axis of the gas channel.

8. The gas mixing device as described in claim 1, characterized in that, It also includes an isolation valve located at the side air inlet for opening or closing the side air inlet.

9. The gas mixing device as described in claim 8, characterized in that, It also includes a cleaning gas pipeline connected to the side air inlet for introducing cleaning gas into the gas channel, and the isolation valve is located between the cleaning gas pipeline and the side air inlet.

10. A chemical vapor deposition apparatus, characterized in that, include: The reaction chamber has an air inlet channel on its top cover; The top cover is provided with a gas mixing device as described in any one of claims 1 to 9, and the outlet of the gas passage inside the main pipeline is connected to the inlet passage. A gas spray head is located below the top cover and communicates with the air inlet channel for conveying gas; The base, located at the lower part of the reaction chamber and opposite to the gas spray head, is used to support the substrate.

11. The chemical vapor deposition apparatus as described in claim 10, characterized in that, The gas inlet inside the main pipeline is connected to the process / purge gas source, and the side inlet is connected to a remote plasma source via a cleaning gas pipeline.

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