A process kit and semiconductor apparatus

Abstract

The application discloses a process kit and a semiconductor device, and relates to the field of semiconductor devices, wherein the process kit comprises an air inlet, a first air outlet, at least two air uniformizing warehouses and air holes, the air uniformizing warehouses are annular structures, and a process space, the air inlet, the at least two air uniformizing warehouses and the first air outlet are sequentially communicated; the air inlet is an annular opening and is coaxially arranged with the process space, or the air inlet comprises at least two air permeable holes which are symmetrically arranged about a central axis of the process space; the at least two air holes are communicated with the at least two adjacent air uniformizing warehouses, and the total air passage area of the at least two air holes in the region close to the first air outlet is smaller than the total air passage area of the at least two air holes in the region far from the first air outlet. The process kit and the semiconductor device are used to solve the problem of non-uniform film deposition thickness and composition on the wafer surface caused by the non-uniform distribution of reaction gas in the process chamber.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment, and more particularly to a process kit and semiconductor equipment. Background Technology

[0002] Thin film deposition is one of the most widely used processes in semiconductor manufacturing. It is mainly used for the preparation of various thin films on wafers and the modification of surface functional films.

[0003] In thin film deposition processes such as CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition), the wafer is typically placed in a process chamber for reaction, and a certain concentration of reaction gas and carrier gas is introduced into the process chamber. The reaction gas reacts on the wafer surface, thereby depositing a thin film on the wafer surface. The reaction byproduct gas is discharged through the exhaust port of the process chamber by a molecular pump and a plant evacuation system.

[0004] In the above-mentioned reaction process, there are problems such as uneven distribution of reactant gases in the process chamber, deposition of reactant gases on the inner wall of the process chamber causing process chamber contamination, contact between charged particles and the inner wall of the process chamber causing radio frequency short circuits, arc discharge damaging the wafer, and particulate matter contaminating the wafer due to the shedding of the thin film deposited on the inner wall of the process chamber. In the prior art, the solution is usually to add process kits to the inner wall of the process chamber to prevent reactant gases from depositing on the inner wall of the process chamber, contact short circuits, and arc discharges caused by contact between reactant gases and the inner wall of the process chamber. However, the problems of uneven distribution of reactant gases in the process chamber and uneven thickness and composition of thin film deposition on the wafer surface still exist.

[0005] In summary, how to solve the problem of uneven film deposition thickness and composition on the wafer surface caused by uneven distribution of reactive gases in the process chamber is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] This application discloses a process kit and semiconductor equipment to solve the problem of uneven film deposition thickness and composition on the wafer surface caused by uneven distribution of reactive gases in the process chamber.

[0007] In a first aspect, this application provides a process kit that encloses a process space; the process kit includes an air inlet, a first exhaust outlet, at least two gas distribution chambers, and air vents, wherein the gas distribution chambers are annular structures, and the process space, the air inlet, the at least two gas distribution chambers, and the first exhaust outlet are sequentially connected; the air inlet is an annular opening and is coaxially arranged with the process space, or the air inlet includes at least two vents symmetrically arranged about the central axis of the process space; the at least two air vents are connected to at least two adjacent gas distribution chambers, and the total ventilation area of ​​the at least two air vents in the region near the first exhaust outlet is smaller than the total ventilation area in the region away from the first exhaust outlet.

[0008] A ring-shaped process kit encloses a process space. The process space, air inlet, at least two gas distribution chambers, and a first exhaust port are sequentially connected. The gas distribution chambers are designed as ring structures, and the total ventilation area of ​​the at least two vents near the first exhaust port is smaller than the total ventilation area away from the first exhaust port. Therefore, after the first exhaust port is connected to negative pressure, the gas in different areas of adjacent gas distribution chambers can pass through the vents at the same or similar flow rates. This makes the gas pressure in different areas of the gas distribution chambers near the process space close to or consistent, thus enabling the air inlets corresponding to different areas in the process space to obtain the same or similar negative pressure suction. Furthermore, the air inlet adopts a ring-shaped opening or at least two vents symmetrically arranged about the central axis of the process space. This allows the gas in the process space to enter from different directions into the corresponding different areas of the gas distribution chambers directly connected to the process space. Combined with the fact that the air inlets corresponding to different areas in the process space have the same or similar negative pressure suction, the different areas in the process space have similar or the same gas flow rates. This allows the reactive gas to be evenly distributed in the process space, improving the uniformity of the thin film deposition thickness and composition on the wafer surface.

[0009] In one possible implementation, the process kit further includes a first positioning structure for positioning with the process chamber; the first positioning structure includes at least two first positioning protrusions disposed on the outer wall or bottom wall of the process kit, the at least two first positioning protrusions being non-uniformly arranged circumferentially with respect to the process kit.

[0010] When the process kit is placed in the process chamber, a first positioning structure is used to position the process kit and the process chamber, restricting their relative rotation. The first positioning structure includes at least two first positioning protrusions located on the bottom or outer peripheral wall of the process kit, which engage with corresponding grooves on the bottom or inner peripheral wall of the process chamber to achieve positioning and improve the stability of the assembly of the process kit and the process chamber. In this embodiment, three first positioning protrusions are provided, and the positioning of the process kit and the process chamber is completed by combining the characteristics of three points forming a surface. In one possible implementation, more than three, such as four, five or more, first positioning protrusions can be provided. In this embodiment, the three first positioning protrusions are non-uniformly arranged circumferentially with respect to the process kit, thereby preventing mistaken assembly of the process kit and the process chamber. For example, the included angles between the centers of the three first positioning protrusions are different, or the shapes and specifications of the three first positioning protrusions themselves are different, so that each first positioning protrusion has a unique corresponding assembly relationship with the groove used for engagement in the process chamber.

[0011] In one possible implementation, at least two gas equalization chambers include a first gas equalization chamber and a second gas equalization chamber. The process kit includes an annular upper bushing, a middle bushing, and a lower bushing. The upper bushing and the middle bushing form a first gas equalization chamber, and an air inlet is disposed on the side wall of the first gas equalization chamber near the process space. The lower bushing and the middle bushing form a second gas equalization chamber, and a first exhaust port is disposed on the side wall of the second gas equalization chamber away from the process space. An air vent is disposed on the middle bushing and connects the first gas equalization chamber and the second gas equalization chamber.

[0012] The process kit adopts a three-layer structure design (upper, middle, and lower), which facilitates the processing of the internal air distribution chamber and air pores, effectively reducing processing difficulty and cost.

[0013] In this embodiment, the upper bushing, middle bushing, and lower bushing are arranged sequentially from top to bottom. The upper and middle bushings have L-shaped cross-sections, and together they form an annular space, which is the first gas equalization chamber. The lower bushing has a U-shaped cross-section, and together with the bottom wall of the middle bushing, it forms an annular space, which is the second gas equalization chamber. An opening is provided on the side wall of the lower bushing away from the process space to form the first exhaust port. The air hole is directly opened on the bottom wall of the middle bushing, which can conduct the first and second gas equalization chambers. Before the upper, middle, and lower bushings are assembled, both sides of the bottom wall of the middle bushing are exposed, which facilitates the processing of the air hole. The upper, middle, and lower bushings are arranged along the central axis of the process chamber, which effectively reduces the radial space occupied by the process chamber.

[0014] In one possible implementation, the process kit includes more than two gas equalization chambers, such as three, four or more, with non-uniformly arranged air vents between adjacent gas equalization chambers, which can further improve the pressure consistency of various areas within the gas equalization chambers that are directly connected to the process space.

[0015] In one possible implementation, the connection point between the side wall of the upper bushing near the process space and the side wall of the middle bushing near the process space forms an air inlet.

[0016] During assembly, the annular upper and middle bushings have uniformly wide assembly seams on the side closest to the process space. These assembly seams form annular air inlets, allowing gases from different areas within the process space to enter the gas uniform chamber from different directions. This helps to ensure that gases from different areas within the process space receive the same or similar flow rates, thereby ensuring that the reactant gases are evenly distributed within the process space and improving the deposition process quality on the wafer surface.

[0017] In one possible implementation, a second positioning structure is provided between the bottom of the upper bushing and the top of the middle bushing; a third positioning structure is provided between the bottom of the middle bushing and the top of the lower bushing.

[0018] A second positioning structure is provided between the upper bushing and the middle bushing, and a third positioning structure is provided between the middle bushing and the lower bushing to limit the relative rotation between the upper bushing and the middle bushing, and between the middle bushing and the lower bushing, thereby improving the structural stability of the process kit.

[0019] Furthermore, the second positioning structure is located at the top or bottom of the upper and middle bushings, and the third positioning structure is located at the top or bottom of the middle and lower bushings, which helps with the assembly and positioning of the upper, middle, and lower bushings when they are stacked vertically. Moreover, compared to setting the second and third positioning structures on the side walls of the upper and middle bushings and the middle and lower bushings respectively, setting the second and third positioning structures on the top or bottom of the upper and middle bushings and the middle and lower bushings respectively helps to reduce the processing difficulty and processing cost.

[0020] In one possible implementation, the second positioning structure includes a second positioning protrusion and a first positioning groove that cooperate with each other, the second positioning protrusion and the first positioning groove being respectively disposed on the upper bushing and the middle bushing; both the second positioning protrusion and the first positioning groove are provided in at least two, and are respectively arranged non-uniformly in the circumferential direction with respect to the upper bushing and the middle bushing.

[0021] The second positioning structure includes a second positioning protrusion and a first positioning groove, which are respectively disposed at the bottom of the upper bushing and the top of the middle bushing. This reduces the processing difficulty and cost of the second positioning structure and helps to reduce the radial wall thickness of the upper bushing and the middle bushing, that is, to reduce the radial space occupied by the process kit.

[0022] Furthermore, both the second positioning protrusion and the first positioning groove are set to at least two, such as three, four or more. Combining the characteristics of three points forming a surface, the stability of the upper bushing and the middle bushing assembly structure is further improved. In addition, the second positioning protrusion and the first positioning groove are arranged in a non-uniform circumferential direction, which effectively prevents mistakes during assembly and ensures the uniqueness of the upper bushing and the middle bushing assembly relationship.

[0023] In one possible implementation, the third positioning structure includes a third positioning protrusion and a second positioning groove that cooperate with each other, the third positioning protrusion and the second positioning groove being respectively disposed on the lower bushing and the middle bushing; the third positioning protrusion and the second positioning groove are each provided as at least two, and are respectively arranged non-uniformly in the circumferential direction with respect to the lower bushing and the middle bushing.

[0024] The third positioning structure includes a third positioning protrusion and a second positioning groove, which are respectively disposed on the top of the lower bushing and the bottom of the middle bushing. This reduces the processing difficulty and cost of the second positioning structure and helps to reduce the radial wall thickness of the lower bushing and the middle bushing, thereby reducing the radial space occupied by the process kit.

[0025] Furthermore, the third positioning protrusion and the second positioning groove are both set to at least two, such as three, four or more. Combined with the characteristic of three points forming a surface, the stability of the assembly structure of the lower bushing and the middle bushing is further improved. In addition, the third positioning protrusion and the second positioning groove are arranged in a non-uniform circumferential direction, which effectively prevents mistakes during assembly and ensures the uniqueness of the assembly relationship between the lower bushing and the middle bushing.

[0026] In one possible implementation, the ventilation area of ​​each vent is equal, and the number of vents near the first exhaust port area is less than the number of vents far from the first exhaust port area.

[0027] Using vents with equal ventilation area facilitates the processing of the process kit. By simply controlling the number of vents in different areas, the total ventilation area of ​​the corresponding area can be controlled.

[0028] In one possible implementation, the vents can be circular, strip-shaped, or polygonal, as long as they can connect adjacent uniform air chambers. For example, in this embodiment, the vents are elongated strips, and their length direction is consistent with the radial direction of the process kit.

[0029] In one possible implementation, the process kit is made of insulating material.

[0030] The process kit can be made of ceramic materials, such as alumina and silicon nitride, which effectively improves its insulation performance, reduces the damage of plasma discharge in the process space to the components outside the process kit, and can withstand the corrosion of corrosive reactive gases such as Cl2 and HF, and reduces the impact of impurities on thin film deposition.

[0031] Secondly, this application also provides a semiconductor device, comprising: The aforementioned process kit; Process chamber, with process kits located inside the process chamber; The cavity cover is installed on top of the process chamber; The shower head is fixedly connected to the chamber cover and located at the top opening of the process chamber; An insulating ring is placed between the shower head and the chamber cover.

[0032] By setting the above-mentioned process kit in the process chamber, the reactive gas can be uniformly distributed in the process space, thereby improving the uniformity of wafer surface thin film deposition thickness and composition in the semiconductor equipment.

[0033] In one possible implementation, an extension at one end of the insulating ring extends into the interior of the process chamber, and the extension extends axially along the process chamber and at least partially overlaps with the process kit.

[0034] An extension is provided at one end of the insulating ring near the process chamber. When the chamber cover is sealed with the process chamber, the extension can penetrate deep into the process chamber and at least partially overlap with the process kit inside the process chamber. This can prevent radio frequency short circuits, prevent arc discharge from damaging other components, and reduce the corrosion of the process kit by corrosive reactive gases such as Cl2 and HF inside the process chamber. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a schematic diagram of the structure of the process kit in the embodiments of this application; Figure 2 This is a schematic diagram of the process kit from another perspective in the embodiments of this application; Figure 3 This is a cross-sectional view of the process kit in an embodiment of this application; Figure 4 This is a schematic diagram of the bushing structure in an embodiment of this application; Figure 5 This is a schematic diagram of the lower bushing structure in an embodiment of this application; Figure 6 This is a structural schematic diagram of the lower bushing from another perspective in an embodiment of this application; Figure 7 This is a side view of the lower bushing in an embodiment of this application; Figure 8 This is an exploded view of the semiconductor device components in an embodiment of this application; Figure 9 This is a cross-sectional view of a semiconductor device in an embodiment of this application.

[0037] Explanation of reference numerals in the attached figures: 1-Upper bushing; 11-Second positioning protrusion; 2-Inner bushing; 21-Air hole; 22-First positioning groove; 23-Second positioning groove; 3-Lower bushing; 31-Avoidance section; 32-First exhaust port; 33-Third positioning protrusion; 34-First positioning protrusion; 4-Process chamber; 41-Cavity; 42-Plate transfer port; 43-Second exhaust port; 5-Insulating ring; 51-Extension; 6-Cavity cover; 7-Shower head; 100 - Process kit; 101 - First gas equalization chamber; 102 - Second gas equalization chamber; 103 - Air inlet; 200 - Semiconductor equipment; 201 - Process space; 202 - Support platform. Detailed Implementation

[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0040] In processes such as CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition), a common approach is to add process kits to the inner wall of the process chamber to prevent reactant gases from depositing on the inner wall, causing short circuits and arcing. However, the problem of uneven distribution of reactant gases within the process chamber and uneven film thickness and composition on the wafer surface still exists.

[0041] Based on this, this application provides a process kit and semiconductor equipment to solve the problem of uneven film deposition thickness and composition on the wafer surface caused by uneven distribution of reactive gases in the process chamber.

[0042] In the description of this invention, it should be understood that the terms "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the position or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations of this invention.

[0043] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a” or “an” are intended to include expressions such as “a or at least two”, unless the context clearly indicates otherwise.

[0044] Example 1

[0045] like Figures 1-9 As shown, this application provides a process kit 100, which encloses a process space 201. The process kit 100 includes an air inlet 103, a first exhaust outlet 32, at least two gas distribution chambers 101 and 102, and vents 21. Each gas distribution chamber 101 and 102 is an annular structure. The process space 201, the air inlet 103, the at least two gas distribution chambers 101 and 102, and the first exhaust outlet 32 ​​are sequentially connected. The air inlet 103 is an annular opening and is coaxially arranged with the process space 201, or the air inlet 103 includes at least two vents symmetrically arranged about the central axis of the process space 201. The at least two vents 21 connect at least two adjacent gas distribution chambers 101 and 102. The total ventilation area of ​​the at least two vents 21 in the region near the first exhaust outlet 32 ​​is less than the total ventilation area in the region away from the first exhaust outlet 32. The total ventilation area is the sum of the areas of the vents 21 used for gas flow.

[0046] In one possible implementation, each vent 21 has an equal ventilation area, and the number of vents 21 near the first exhaust port 32 is less than the number of vents 21 far from the first exhaust port 32. The ventilation area is the area of ​​the vent 21 used for gas flow. Using vents 21 with equal ventilation areas facilitates the processing of the process kit 100; only the number of vents 21 in different areas needs to be controlled to control the total ventilation area of ​​the corresponding area. In another possible implementation, each vent 21 has a different ventilation area, and the sum of the ventilation areas of at least one vent 21 near the first exhaust port 32 is less than the sum of the ventilation areas of at least one vent 21 far from the first exhaust port 32.

[0047] In one possible implementation, the vent 21 can be a circular hole, a strip hole, or a polygonal hole, as long as it can connect adjacent air distribution chambers 101 and 102. For example, in this embodiment, the vent 21 is a long strip hole, and the length direction of the vent 21 is consistent with the radial direction of the process kit 100.

[0048] like Figure 2 As shown in the figure, the double-dotted line is the center line of the first exhaust port 32, and the dashed line is the perpendicular line to the center line of the first exhaust port 32. The process kit 100 is divided into two symmetrical parts by the perpendicular line to the center line of the first exhaust port 32. The area close to the first exhaust port 32 is one part close to the first exhaust port 32, and the area away from the first exhaust port 32 is the other part away from the first exhaust port 32.

[0049] like Figure 4 and Figure 9 As shown, the process kit 100 with an annular structure, the support platform 202, and the shower head 7 enclose the process space 201. The process space 201, the air inlet 103, at least two gas equalization chambers 101 and 102, and the first exhaust port 32 are connected in sequence. The gas equalization chambers 101 and 102 are set as annular structures, and the total ventilation area of ​​the at least two air holes 21 in the area near the first exhaust port 32 is smaller than the total ventilation area in the area away from the first exhaust port 32. Therefore, after the first exhaust port 32 is connected to negative pressure, the gas in different areas of the two adjacent gas equalization chambers 101 and 102 can pass through the air holes 21 at the same or similar flow rate. This makes the gas pressure in different areas of the gas equalization chambers 101 and 102 near the process space 201 close or consistent. This allows the air inlets 103 corresponding to different areas in the process space 201 to obtain the same or similar negative pressure suction, thereby improving the uniformity of the reaction gas in the process chamber 4.

[0050] The air inlet 103 adopts an annular opening or at least two vent holes symmetrically arranged about the central axis of the process space 201. This allows the gas in the process space 201 to enter different areas of the gas uniform chambers 101 and 102 that are connected to the process space 201 from different directions through the air inlet 103. Combined with the fact that the air inlets 103 corresponding to different areas of the process space 201 have the same or similar negative pressure suction, the different areas of the process space 201 have similar or the same gas flow rate. This allows the reaction gas to be evenly distributed in the process space 201, improving the uniformity of the thin film deposition thickness and composition on the wafer surface.

[0051] like Figure 2 , 6As shown in Figure 7, in one possible embodiment, the process kit 100 further includes a first positioning structure for positioning with the process chamber 4. The first positioning structure includes at least two first positioning protrusions 34 disposed on the outer wall or bottom wall of the process kit 100, and the at least two first positioning protrusions 34 are arranged non-uniformly around the process kit 100. "Non-uniformly arranged around the circumference" in this context means that the structure, distribution position, spacing, size, or angle of the various features on the circumference of the process kit 100 are not all equal or symmetrical, but rather differ.

[0052] When the process kit 100 is placed in the process chamber 4, the process kit 100 and the process chamber 4 are positioned by the first positioning structure, which restricts the relative rotation between the process kit 100 and the process chamber 4.

[0053] The first positioning structure includes at least two first positioning protrusions 34 disposed on the bottom or outer peripheral wall of the process kit 100, which respectively engage with the grooves at corresponding positions on the bottom wall or inner peripheral wall of the process chamber 4 to achieve positioning and improve the stability of the assembly of the process kit 100 and the process chamber 4. In this embodiment, a total of three first positioning protrusions 34 are provided. Combining the characteristics of three points forming a surface, the positioning of the process kit 100 and the process chamber 4 is completed. In one possible implementation, more than three, such as four, five or more, first positioning protrusions 34 can be provided.

[0054] In this embodiment, the three first positioning protrusions 34 are arranged non-uniformly around the process kit 100, thereby preventing mistake-proofing when assembling the process kit 100 with the process chamber 4. For example, if the included angle between the centers of adjacent first positioning protrusions 34 is different, or if the shapes and specifications of the three first positioning protrusions 34 are different, each first positioning protrusion 34 and the groove in the process chamber 4 for engaging are uniquely corresponding in the assembly relationship.

[0055] like Figure 3 As shown, in this embodiment, at least two gas equalization chambers 101 and 102 include a first gas equalization chamber 101 and a second gas equalization chamber 102. The first gas equalization chamber 101 and the second gas equalization chamber 102 are connected through at least two air holes 21. The first gas equalization chamber 101 is connected to the process space 201 through an air inlet 103, and the second gas equalization chamber 102 is connected to the first exhaust port 32. That is, gas equalization is achieved through two-stage gas equalization chambers 101 and 102, thereby improving the consistency of the airflow in different areas through the air inlet 103.

[0056] In one possible implementation, the process kit 100 is provided with more than two gas equalization chambers 101 and 102, such as three, four or more, and non-uniformly arranged air holes 21 are provided between two adjacent gas equalization chambers 101 and 102, which can further improve the pressure consistency of each area in the gas equalization chambers 101 and 102 that are connected to the process space 201.

[0057] In one possible implementation, the process kit 100 includes an annular upper bushing 1, a middle bushing 2, and a lower bushing 3; the upper bushing 1 and the middle bushing 2 form a first gas equalization chamber 101, and an air inlet 103 is disposed on the side wall of the first gas equalization chamber 101 near the process space 201; the lower bushing 3 and the middle bushing 2 form a second gas equalization chamber 102, and a first exhaust port 32 is disposed on the side wall of the second gas equalization chamber 102 away from the process space 201; an air hole 21 is disposed on the middle bushing 2 and connects the first gas equalization chamber 101 and the second gas equalization chamber 102.

[0058] The process kit 100 adopts a three-layer structure design (upper, middle, and lower), which facilitates the processing of the internal air distribution chambers 101 and 102 and the air vents 21, effectively reducing processing difficulty and cost.

[0059] like Figure 2 and Figure 3 As shown, in this embodiment, the upper bushing 1, the middle bushing 2, and the lower bushing 3 are arranged sequentially from top to bottom. The upper bushing 1 and the middle bushing 2 have L-shaped cross-sections, and together they form an annular space, which is the first gas equalization chamber 101. A gap is reserved at the connection position of the upper bushing 1 and the middle bushing 2 near the process space 201 to form an air inlet 103. The lower bushing 3 has a U-shaped cross-section, and together with the bottom wall of the middle bushing 2, it forms an annular space, which is the second gas equalization chamber 102. The lower bushing 3 is located away from the process space 201. An opening is provided on one side wall of the process space 201 to form a first exhaust port 32; the air hole 21 is directly opened on the bottom wall of the middle bushing 2, which can conduct the first uniform air chamber 101 and the second uniform air chamber 102. Before the upper bushing 1, the middle bushing 2 and the lower bushing 3 are assembled, both sides of the bottom wall of the middle bushing 2 are exposed, which facilitates the processing of the air hole 21. The upper bushing 1, the middle bushing 2 and the lower bushing 3 are arranged along the central axis of the process chamber 4, which effectively reduces the radial space occupation of the process chamber 4.

[0060] In one possible implementation, an air inlet 103 is formed at the junction of the side wall of the upper bushing 1 near the process space 201 and the side wall of the middle bushing 2 near the process space 201.

[0061] During assembly, the annular upper bushing 1 and middle bushing 2 are provided with a uniformly wide assembly seam on the side near the process space 201. The assembly seam is used as an air inlet 103, thus forming an annular air inlet 103. This allows gas from different regions within the process space 201 to enter the gas uniform chambers 101 and 102 in different directions through the air inlet 103. It also helps to ensure that the gas in different regions within the process space 201 obtains the same or similar flow rate, thereby making the reaction gas evenly distributed within the process space 201 and ultimately improving the deposition process quality on the wafer surface.

[0062] like Figure 2 , 4 As shown in Figure 7, in one possible implementation, a second positioning structure is provided between the bottom of the upper bushing 1 and the top of the middle bushing 2; and a third positioning structure is provided between the bottom of the middle bushing 2 and the top of the lower bushing 3.

[0063] A second positioning structure and a third positioning structure are respectively provided between the upper bushing 1 and the middle bushing 2, and between the middle bushing 2 and the lower bushing 3, to restrict the relative rotation between the upper bushing 1 and the middle bushing 2, and between the middle bushing 2 and the lower bushing 3, thereby improving the structural stability of the process kit 100.

[0064] Furthermore, the second and third positioning structures are respectively located at the top or bottom of the upper bushing 1 and the middle bushing 2, and the middle bushing 2 and the lower bushing 3, which helps with the assembly and positioning of the upper bushing 1, the middle bushing 2, and the lower bushing 3 when stacked vertically. Moreover, compared to setting the second and third positioning structures on the side walls of the upper bushing 1 and the middle bushing 2, and the middle bushing 2 and the lower bushing 3, setting the second and third positioning structures on the top or bottom of the upper bushing 1 and the middle bushing 2, and the middle bushing 2 and the lower bushing 3 helps to reduce the processing difficulty and processing cost.

[0065] In one possible implementation, the second positioning structure includes a second positioning protrusion 11 and a first positioning groove 22 that cooperate with each other. The second positioning protrusion 11 and the first positioning groove 22 are respectively disposed on the upper bushing 1 and the middle bushing 2. The second positioning protrusion 11 and the first positioning groove 22 are each provided as at least two, and are respectively arranged non-uniformly in the circumferential direction about the upper bushing 1 and the middle bushing 2.

[0066] The second positioning structure includes a second positioning protrusion 11 and a first positioning groove 22, which are respectively disposed at the bottom of the upper bushing 1 and the top of the middle bushing 2, thereby reducing the processing difficulty and cost of the second positioning structure, and also helping to reduce the radial wall thickness of the upper bushing 1 and the middle bushing 2, that is, reducing the radial space occupied by the process kit 100.

[0067] Furthermore, the second positioning protrusion 11 and the first positioning groove 22 are both set to at least two, such as three, four or more. Combined with the characteristic of three points forming a surface, the stability of the assembly structure of the upper bushing 1 and the middle bushing 2 is further improved. Moreover, the second positioning protrusion 11 and the first positioning groove 22 are arranged in a non-uniform circumferential direction, which effectively prevents mistakes during assembly and ensures the uniqueness of the assembly relationship between the upper bushing 1 and the middle bushing 2.

[0068] In one possible implementation, the third positioning structure includes a third positioning protrusion 33 and a second positioning groove 23 that cooperate with each other. The third positioning protrusion 33 and the second positioning groove 23 are respectively disposed on the lower bushing 3 and the middle bushing 2. The third positioning protrusion 33 and the second positioning groove 23 are each provided as at least two, and are respectively arranged non-uniformly in the circumferential direction with respect to the lower bushing 3 and the middle bushing 2.

[0069] The second positioning structure includes a third positioning protrusion 33 and a second positioning groove 23, which are respectively disposed on the top of the lower bushing 3 and the bottom of the middle bushing 2, thereby reducing the processing difficulty and cost of the second positioning structure, and also helping to reduce the radial wall thickness of the lower bushing 3 and the middle bushing 2, that is, reducing the radial space occupied by the process kit 100.

[0070] Furthermore, the third positioning protrusion 33 and the second positioning groove 23 are both set to at least two, such as three, four or more. Combined with the characteristic of three points forming a surface, the stability of the assembly structure of the lower bushing 3 and the middle bushing 2 is further improved. Moreover, the third positioning protrusion 33 and the second positioning groove 23 are arranged in a non-uniform circumferential manner, which effectively prevents mistakes during assembly and ensures the uniqueness of the assembly relationship between the lower bushing 3 and the middle bushing 2.

[0071] In one possible implementation, the process kit 100 is made of insulating material.

[0072] Specifically, the process kit 100 can be made of ceramic materials, such as alumina and silicon nitride, which effectively improves its insulation performance, reduces the damage of plasma discharge in the process space 201 to the components outside the process kit 100, and can withstand the corrosion of corrosive reactive gases such as Cl2 and HF, and reduces the impact of impurities on thin film deposition.

[0073] Example 2: like Figure 8 and 9 As shown, this application also provides a semiconductor device, including: a process kit 100 of the above embodiment 1, a process chamber 4, a chamber cover 6, a shower head 7, and an insulating ring 5; the process kit 100 is disposed inside the process chamber 4; the chamber cover 6 is installed on the top of the process chamber 4; the shower head 7 is fixedly connected to the chamber cover 6 and is located at the top opening of the process chamber 4; the insulating ring 5 is disposed between the shower head 7 and the chamber cover 6.

[0074] By installing the process kit 100 from Embodiment 1 within the process chamber 4, problems such as reactant gas deposition, contact short circuits, and arc discharge caused by contact between reactant gas and the inner wall of the process chamber 4 are prevented. An insulating ring 5 is added between the shower head 7 and the chamber cover 6 to achieve insulation between the shower head 7 and the chamber cover 6, preventing charged ions or electrons from contacting and discharging with the chamber cover 6. This also allows the reactant gas to be uniformly distributed within the process space 201, thereby improving the uniformity of wafer surface thin film deposition thickness and composition within the semiconductor equipment.

[0075] In one possible implementation, the process chamber 4 includes a cavity 41, a wafer transfer port 42, and a second exhaust port 43. Both the wafer transfer port 42 and the second exhaust port 43 are disposed on the side wall of the cavity 41. The side wall of the process kit 100 is provided with a through clearance portion 31. When the process kit 100 is assembled with the process chamber 4, the clearance portion 31 corresponds to and is connected to the wafer transfer port 42, so that the wafer can enter the process chamber 4 of the semiconductor device 200 through the wafer transfer port 42 and the clearance portion 31.

[0076] Furthermore, when the process kit 100 is assembled with the process chamber 4, the first exhaust port 32 and the second exhaust port 43 are positioned and connected, enabling the gas in the gas equalization chambers 101 and 102 to be discharged under the negative pressure of the second exhaust port 43. In actual use, the working height of the support platform 202 used to support the wafer is higher than the air inlet 103 and lower than the shower head 7. Therefore, after the gas is diffused by the shower head 7, it flows evenly across the surface of the wafer supported by the support platform 202 and reacts before being drawn in by the air inlet 103 and discharged from the process space 201.

[0077] In one possible implementation, an extension 51 at one end of the insulating ring 5 extends into the interior of the process chamber 4, and the extension 51 extends axially along the process chamber 4 and at least partially overlaps with the process kit 100.

[0078] In one possible implementation, an extension 51 is provided at one end of the insulating ring 5 near the process chamber 4. When the chamber cover 6 is sealed with the process chamber 4, the extension 51 can penetrate deep into the process chamber 4 and at least partially overlap with the process kit 100 inside the process chamber 4. This can prevent radio frequency short circuits, prevent arc discharge from damaging other components, and reduce the corrosion of the process kit 100 by corrosive reactive gases such as Cl2 and HF inside the process chamber 4.

[0079] The above-described preferred embodiments have further illustrated the purpose, technical solutions, and advantages of the present invention. It should be understood that the above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A process kit enclosing a process space (201), characterized in that, The process kit (100) includes an air inlet (103), a first exhaust port (32), at least two gas equalization chambers (101, 102) and an air hole (21). The gas equalization chambers (101, 102) are annular structures. The process space (201), the air inlet (103), the at least two gas equalization chambers (101, 102) and the first exhaust port (32) are connected in sequence. The air inlet (103) is an annular opening and is arranged coaxially with the process space (201), or the air inlet (103) includes at least two ventilation holes symmetrically arranged about the central axis of the process space (201); At least two of the vents (21) are connected to at least two adjacent air chambers (101, 102), and the total ventilation area of ​​the at least two vents (21) in the region near the first exhaust port (32) is smaller than the total ventilation area in the region away from the first exhaust port (32).

2. The process kit according to claim 1, characterized in that, It also includes a first positioning structure, which is used to position the process chamber (4); The first positioning structure includes at least two first positioning protrusions (34) disposed on the outer wall or bottom wall of the process kit, and the at least two first positioning protrusions (34) are arranged non-uniformly in the circumferential direction with respect to the process kit.

3. The process kit according to claim 1 or 2, characterized in that, At least two of the gas equalization chambers (101, 102) include a first gas equalization chamber (101) and a second gas equalization chamber (102), and the process kit includes an annular upper bushing (1), a middle bushing (2) and a lower bushing (3). The upper bushing (1) and the middle bushing (2) form the first gas equalization chamber (101), and the air inlet (103) is located on the side wall of the first gas equalization chamber (101) near the process space (201). The lower bushing (3) and the middle bushing (2) form the second gas equalization chamber (102), and the first exhaust port (32) is located on the side wall of the second gas equalization chamber (102) away from the process space (201). The air hole (21) is provided in the middle bushing (2) and connects the first air distribution chamber (101) and the second air distribution chamber (102).

4. The process kit according to claim 3, characterized in that, The air inlet (103) is formed at the junction of the upper bushing (1) near the side wall of the process space (201) and the middle bushing (2) near the side wall of the process space (201).

5. The process kit according to claim 3 or 4, characterized in that, A second positioning structure is provided between the bottom of the upper bushing (1) and the top of the middle bushing (2); A third positioning structure is provided between the bottom of the middle bushing (2) and the top of the lower bushing (3).

6. The process kit according to claim 5, characterized in that, The second positioning structure includes a second positioning protrusion (11) and a first positioning groove (22) that cooperate with each other. The second positioning protrusion (11) and the first positioning groove (22) are respectively disposed on the upper bushing (1) and the middle bushing (2). The second positioning protrusion (11) and the first positioning groove (22) are both provided as at least two, and are arranged non-uniformly in the circumferential direction about the upper bushing (1) and the middle bushing (2), respectively; The third positioning structure includes a third positioning protrusion (33) and a second positioning groove (23) that cooperate with each other. The third positioning protrusion (33) and the second positioning groove (23) are respectively disposed on the lower bushing (3) and the middle bushing (2). The third positioning protrusion (33) and the second positioning groove (23) are both provided in at least two forms, and are arranged non-uniformly in the circumferential direction with respect to the lower bushing (3) and the middle bushing (2), respectively.

7. The process kit according to any one of claims 1-6, characterized in that, The ventilation area of ​​each of the vents (21) is equal, and the number of vents (21) near the first exhaust port (32) is less than the number of vents (21) far from the first exhaust port (32).

8. The process kit according to any one of claims 1-7, characterized in that, The process kit is made of insulating material.

9. A semiconductor device, characterized in that, include: The process kit (100) as described in any one of claims 1-8; Process chamber (4), the process kit (100) is disposed inside the process chamber (4); A cavity cover (6) is installed on top of the process chamber (4); Shower head (7), the shower head (7) is fixedly connected to the chamber cover (6) and located at the top opening of the process chamber (4); An insulating ring (5) is disposed between the shower head (7) and the cavity cover (6).

10. The semiconductor device according to claim 9, characterized in that, The extension (51) at one end of the insulating ring (5) extends into the interior of the process chamber (4), and the extension (51) extends axially along the process chamber (4) and at least partially overlaps with the process kit (100).

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