A semiconductor component, a coating forming method therefor, and a plasma processing apparatus

Abstract

The application discloses a semiconductor component, a coating forming method thereof and a plasma processing device. The semiconductor component comprises a component body, a first transition layer, a second transition layer, a growth layer and a diamond coating layer formed on the surface of the component body in the thickness direction of the component body in sequence, wherein the thermal expansion coefficients of the first transition layer, the second transition layer and the diamond coating layer decrease in sequence. The diamond coating layer greatly improves the hardness, corrosion resistance and thermal uniformity at high temperature of the semiconductor component. Further, the first transition layer and the second transition layer with gradually decreasing thermal expansion coefficients are formed on the surface of the component body with different substrates in sequence, so that the thermal stress can be greatly reduced, coating cracking and peeling can be avoided, and the service life of the semiconductor component is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a semiconductor component, a coating formation method thereof, and a plasma treatment apparatus. Background Technology

[0002] In the semiconductor manufacturing field, Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) are key processes for preparing various functional thin films. These processes typically require a specific temperature to induce a chemical or adsorption reaction between a gaseous precursor and the wafer surface, thereby achieving thin film deposition and growth. During this process, semiconductor components within the reaction chamber play crucial roles, such as the substrate, gas spray head, upper grounding ring, lower grounding ring, and focusing ring. The pedestal, as the core component within the reaction chamber, plays a vital role in supporting and heating the wafer; its performance directly affects the uniformity and repeatability of thin film growth, as well as the yield of the final device.

[0003] Currently used heating plates include aluminum plates, stainless steel plates, and ceramic plates. However, each type of heating plate has revealed its inherent defects in long-term use, making it difficult to achieve an ideal balance in terms of high-temperature stability, thermal uniformity, corrosion resistance, and cost control.

[0004] The statements herein provide only background information in relation to this invention and do not necessarily constitute prior art. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor component whose coating can take into account high temperature stability, excellent thermal uniformity, good corrosion resistance, and is not prone to cracking.

[0006] To achieve the above objectives, the present invention provides a semiconductor component, comprising: Component body; In the thickness direction of the component body, a first transition layer, a second transition layer, a growth layer, and a diamond coating are sequentially formed on the surface of the component body; The coefficients of thermal expansion of the first transition layer, the second transition layer, and the diamond coating decrease sequentially.

[0007] Compared with the prior art, in the semiconductor components of the present invention, the diamond coating greatly improves the hardness, corrosion resistance and thermal uniformity at high temperatures of the semiconductor components; furthermore, a first transition layer and a second transition layer with gradually decreasing coefficients of thermal expansion are sequentially formed on the surface of the component body on different substrates, which can significantly reduce thermal stress, make up for the problem of large difference in the coefficients of thermal expansion between the diamond coating and the component body, avoid coating cracking and peeling, and improve the service life of the semiconductor components; the growth layer has a low mismatch rate with the diamond lattice, which is conducive to its growth.

[0008] In some embodiments, the first transition layer is made of metal.

[0009] In some embodiments, the component body is made of aluminum.

[0010] In some embodiments, the material of the first transition layer includes any one of metallic nickel, metallic copper, and metallic molybdenum.

[0011] In some embodiments, the material of the second transition layer includes an amorphous alloy composed of any two or more of nickel, phosphorus, tungsten, copper, zinc, aluminum, iron, and boron.

[0012] In some embodiments, the material of the second transition layer includes any one of electroless nickel-phosphorus alloy, nickel-tungsten-phosphorus alloy, copper-zinc-aluminum alloy, and iron-boron amorphous alloy.

[0013] In some embodiments, the coefficient of thermal expansion of the growth layer is less than that of the second transition layer and greater than that of the diamond coating, and the growth layer comprises at least one carbide layer.

[0014] In some embodiments, the component body is made of stainless steel.

[0015] In some embodiments, the first transition layer is adapted to block the outward diffusion of iron and / or nickel from the stainless steel.

[0016] In some embodiments, the material of the first transition layer includes any one of molybdenum, chromium, and tantalum.

[0017] In some embodiments, the material of the second transition layer includes any one of tungsten carbide, tantalum carbide, and tungsten boride.

[0018] In some embodiments, the growth layer has plastic deformation capability.

[0019] In some embodiments, the material of the growth layer includes any one of titanium nitride, titanium aluminum nitride, chromium aluminum nitride, and zinc nitride.

[0020] In some embodiments, the thickness of the diamond coating is 5 μm to 10 μm.

[0021] In some embodiments, the grain size of the diamond coating is 2 nm to 50 μm.

[0022] In some embodiments, the thickness of the growth layer is 2 μm to 5 μm.

[0023] The present invention also provides a coating formation method for a semiconductor component as described above, comprising: A component body to be processed is provided, and the component body to be processed is placed in a reaction chamber; A first transition layer, a second transition layer, and a growth layer are sequentially deposited on the surface of the component body to be processed. At least carbon-containing gas and hydrogen are introduced into the reaction chamber, and the plasma source is turned on. The carbon-containing gas and hydrogen dissociate into active particles, and the active particles form a diamond coating on the surface of the growth layer.

[0024] In some embodiments, the concentration of the carbon-containing gas is 1% to 5%, and the concentration of the hydrogen gas is 95% to 99%.

[0025] In some embodiments, the coating formation method further includes introducing oxygen or argon into the reaction chamber before turning on the plasma source.

[0026] The present invention also provides a plasma processing apparatus, including a reaction chamber, wherein a semiconductor component as described in any of the above embodiments is disposed within the reaction chamber.

[0027] In some embodiments, when the plasma processing device is a capacitively coupled plasma processing device, the semiconductor component includes at least one of the following: a base, a gas spray head, an upper grounding ring, a lower grounding ring, a focusing ring, an electrostatic chuck, and a plasma confinement ring.

[0028] In some embodiments, when the plasma processing device is an inductively coupled plasma processing device, the semiconductor component includes at least one of the following: a base, a gas nozzle, a focusing ring, a plasma confinement ring, a gas injection port, and an electrostatic chuck. Attached Figure Description

[0029] Figure 1 This is a flowchart of a coating formation method for semiconductor components according to the present invention.

[0030] Figure 2 This is a simplified structural diagram of the aluminum-based semiconductor component of the present invention.

[0031] Figure 3 This is a simplified structural diagram of the semiconductor component with a stainless steel substrate according to the present invention.

[0032] Figure 4 This is a schematic diagram of the structure of a capacitively coupled plasma processing device according to the present invention.

[0033] Figure 5 This is a schematic diagram of the structure of an inductively coupled plasma processing device according to the present invention.

[0034] Attached image labels: 11-Aluminum substrate, 12-Stainless steel substrate, 2-First transition layer, 3-Second transition layer, 4-Growth layer, 5-Diamond coating, 100-Plasma reaction chamber, 110-Gas spray head, 111-Gas supply device, 112-Mounting substrate, 113-Upper grounding ring, 114-Lower grounding ring, 115-Middle grounding ring, 120-Electrostatic chuck, 121-Base, 122-Focusing ring, 123-Insulating ring, 124-Covering ring, 1 25-Plasma confinement ring, 130-RF power supply, 131-Matching network, W-Substrate to be processed, 200-Vacuum reaction chamber, 201-Gas injection port, 202-Gas nozzle, 210-Inductive coupling coil, 211-RF power source, 212-Matching network, 213-Insulating window, 220-Electrostatic chuck, 221-Base, 222-Focusing ring, 223-Insulating ring, 224-Covering ring, 225-Plasma confinement ring. Detailed Implementation

[0035] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a more detailed account of a semiconductor component, its coating formation method, and a plasma processing apparatus according to the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0036] Among various types of heating pads, aluminum pads, due to aluminum's high thermal conductivity, can quickly and evenly transfer heat, ensuring consistent heating on the back side of the wafer. This makes them suitable for medium- and low-temperature processes requiring high temperature uniformity. However, aluminum pads have a drawback: they are not heat-resistant. When the process temperature exceeds 350°C, the aluminum softens or even melts and deforms in certain areas. On one hand, the molten aluminum adheres to the back side of the wafer, directly causing wafer contamination and affecting the accuracy of subsequent photolithography, deposition, and other processes. On the other hand, after the aluminum pad deforms, the smoothness of the pad surface decreases, the original advantage of thermal uniformity is lost, and the heating differences of the wafer gradually increase during subsequent use.

[0037] Ceramic disks exhibit excellent high-temperature resistance, withstanding temperatures exceeding 1000℃ in high-vacuum environments. They also possess good chemical stability, resisting reactions with process gases, making them suitable for demanding high-temperature, high-vacuum processes (such as high-temperature annealing and ion implantation). Furthermore, they are less prone to deformation at high temperatures, maintaining surface smoothness better than aluminum disks over long-term use, reducing process fluctuations caused by substrate deformation. However, ceramics have low thermal conductivity and slow heat transfer, making them susceptible to localized temperature differences on the disk surface. The direct impact is that if this temperature difference exceeds the ceramic's coefficient of thermal expansion (CTE), internal stress can develop, leading to disk cracking. This necessitates substrate replacement and may also result in ceramic fragment contamination of the wafer cavity. Indirectly, uneven wafer heating can cause regional variations in process results, reducing product yield.

[0038] Stainless steel trays can withstand temperatures above 600℃ without melting like aluminum trays or cracking due to temperature differences like ceramic trays. This makes them suitable for medium-to-high temperature processes where extreme thermal uniformity is not critical. Stainless steel raw materials and processing costs are lower than ceramic trays, and the processing is easier. However, stainless steel trays suffer from poor temperature consistency. Even with the same processing technology, different stainless steel trays may exhibit temperature differences of nearly 10℃, leading to inconsistent process results for wafers in the same batch. This necessitates additional parameter calibration, increasing production complexity and reducing efficiency. Furthermore, stainless steel has poor corrosion resistance. In certain processes (such as the HCl gas generated in the ALD TiN process), stainless steel can corrode, causing wafer contamination.

[0039] It is evident that existing aluminum, ceramic, and stainless steel discs each have their own advantages and disadvantages, making it difficult to simultaneously achieve high temperature resistance, corrosion resistance, thermal uniformity, and low cost.

[0040] To address the aforementioned technical problems, this invention provides a semiconductor component, comprising a component body, and, along the thickness direction of the component body, a first transition layer, a second transition layer, a growth layer, and a diamond coating sequentially formed on the surface of the component body; wherein the coefficients of thermal expansion of the first transition layer, the second transition layer, and the diamond coating decrease sequentially. This invention, by forming a diamond coating on the surface of the component body, significantly improves the hardness, corrosion resistance, and thermal uniformity of the semiconductor component at high temperatures; furthermore, by sequentially forming multilayer coatings (first transition layer, second transition layer) with gradually decreasing coefficients of thermal expansion on the surfaces of component bodies made of different substrates, it can substantially reduce thermal stress, prevent coating cracking and peeling, and improve the service life of the semiconductor component.

[0041] Due to its unique physicochemical properties, diamond offers the following advantages when used as a coating on the surface of semiconductor components: (1) High hardness and wear resistance: Diamond is almost the hardest material in nature and can effectively resist physical friction and impact in semiconductor processes. For example, during wafer transport and clamping, the surface of semiconductor components will come into contact with the wafer or other components and rub against each other. Diamond coating can significantly reduce the wear rate and avoid particle contamination caused by surface wear. In plasma processes (such as etching and deposition), high-energy ions will continuously bombard the surface of semiconductor components. Diamond coating can withstand this bombardment, reduce surface material peeling, and maintain the dimensional accuracy and surface flatness of semiconductor components.

[0042] (2) Chemical stability: Diamond is extremely chemically inert and hardly reacts in the harsh chemical environment commonly found in semiconductors. It can effectively protect the substrate and resist strong acids, strong alkalis and corrosive gases generated in the process, preventing semiconductor components from being corroded and preventing corrosion products from contaminating the wafer and process environment. In high temperature and high vacuum environments, the diamond coating will not react chemically with wafer materials or process gases, ensuring process purity and reducing the risk of impurity introduction.

[0043] (3) Superior thermal conductivity: Diamond has a thermal conductivity far exceeding that of copper and aluminum. For semiconductor components requiring precise temperature control, diamond coatings can rapidly transfer and diffuse localized heat, preventing hot spots, ensuring uniform wafer heating, and improving process yield. In high-power, long-term operating equipment, diamond coatings can quickly dissipate internal heat from semiconductor components, preventing them from aging or degrading due to overheating, and extending their service life. Figure 1 As shown, in order to form a diamond coating, the present invention provides a coating formation method for semiconductor components, comprising the following steps: Step S1: Provide a component body to be processed and place the component body to be processed into the reaction chamber.

[0044] Step S2: Sequentially deposit a first transition layer, a second transition layer, and a growth layer on the surface of the component to be processed.

[0045] Step S3: At least carbon-containing gas and hydrogen are introduced into the reaction chamber, and the plasma source is turned on. The carbon-containing gas and hydrogen dissociate into active particles, and the active particles form a diamond coating 5 on the surface of the growth layer.

[0046] In steps S1 and S2, the component body to be processed is first treated within the reaction chamber, causing the first transition layer, the second transition layer, and the growth layer to be deposited sequentially. For example... Figure 2 As shown, in some embodiments, the component body is made of aluminum, meaning the substrate of the semiconductor component is aluminum. The coefficients of thermal expansion of diamond and aluminum differ significantly. Diamond has a coefficient of thermal expansion of approximately 1 ppm / K to 2 ppm / K, while aluminum has a coefficient as high as 23 ppm / K. Given this order-of-magnitude difference, when the temperature changes by 100°C, aluminum will expand by 0.2% more than diamond, equivalent to a 4 cm difference in thickness between 20 μm of material. Under such circumstances, the coating may crack.

[0047] To prevent coating cracking, a first transition layer 2 is formed on the surface of the aluminum substrate 11. The first transition layer 2 can isolate the aluminum substrate 11 from oxidation and provide a metal bonding interface. The material of the first transition layer 2 is any one of nickel, copper, or molybdenum. In this embodiment, the first transition layer 2 is an electroplated nickel layer with a thickness greater than or equal to 20 μm. The aluminum substrate 11 will form a natural oxide film, which will prevent any coating from adhering directly to its surface. The formation of a dense electroplated nickel layer on the surface of the aluminum substrate 11, which completely covers the surface of the aluminum substrate 11, can first solve the adhesion problem caused by the oxide film on the aluminum surface. The electroplated nickel layer can prevent oxygen penetration during the high-temperature chemical vapor deposition process, which would cause the aluminum substrate 11 to oxidize again. In addition, nickel and aluminum can form an intermetallic compound Al3Ni. The intermetallic compound Al3Ni is an interface diffusion layer with a thickness of about 2 μm to 5 μm. The bonding strength of this interface diffusion layer is greater than 80 MPa, which is much greater than the strength of aluminum itself. After the coating is formed on the aluminum substrate 11, it can prevent the coating from peeling off.

[0048] To buffer thermal stress and suppress the formation of brittle phases at the interface, a second transition layer 3 is formed on the surface of the first transition layer 2, and the coefficient of thermal expansion of the second transition layer 3 is less than that of the first transition layer 2. The second transition layer 3 is made of any one of the following materials: electroless nickel-phosphorus alloy, nickel-tungsten-phosphorus alloy, copper-zinc-aluminum alloy, or iron-boron amorphous alloy, which can buffer thermal stress. In this embodiment, the second transition layer 3 is an electroless nickel-phosphorus alloy layer, whose amorphous structure can buffer thermal stress. By adjusting the phosphorus content (9wt%~12wt%), the coefficient of thermal expansion of the nickel-phosphorus alloy can be reduced from 13×10⁻⁶ for pure nickel. -6 / K decreased to 11.5×10 -6 / K.

[0049] To provide a growth template for diamond epitaxy and facilitate better growth of the diamond coating 5, a growth layer 4 is formed on the surface of the second transition layer 3. The growth layer 4 has a lower coefficient of thermal expansion than the second transition layer 3. The growth layer 4 comprises at least one carbide layer. For example, it can be a silicon carbide layer or an aluminum nitride-silicon carbide multilayer stack. In this embodiment, the growth layer 4 is a silicon carbide layer, and the coefficient of thermal expansion of the silicon carbide layer is 4.5 × 10⁻⁶. -6 / K, whose coefficient of thermal expansion is between 11.5 × 10⁻⁶ for nickel-phosphorus in the second transition layer 3. -6 / K with diamond coating 5 2.3×10 -6 Between / K, it can act as a buffer against thermal expansion; in addition, the main component of diamond is carbon, and film formation requires the acquisition of an "active carbon source" (such as •C2H free radicals). The lattice mismatch between the silicon carbide (111) facet and the diamond (110) facet is only 1.3%. The silicon dangling bonds on the silicon carbide (111) facet can strongly adsorb •C2H generated by the cracking of C2H2, with a nucleation density of 10. 11 cm -2 This ensures a sufficient and stable supply of carbon source during diamond film formation, laying the foundation for the subsequent growth of diamond coating 5.

[0050] like Figure 3 As shown, in some embodiments, the material of the component body is stainless steel. That is, the substrate of the semiconductor component is stainless steel. However, if a diamond coating 5 is formed directly on the surface of stainless steel, it will lead to the accumulation of interfacial thermal stress (Δα≈15×10). -6 / K), after repeated thermal cycling, stratification occurs; secondly, the iron / nickel elements in stainless steel undergo a catalytic reaction that causes carbon elements to form graphite, which is the carbon structure that should have formed (such as the sp in diamond). 3 The hybrid structure, under the catalysis of iron / nickel elements, will preferentially transform into graphite. These graphites will "mix in" into the growing diamond coating 5 in the form of tiny particles or regions, becoming unwanted impurities and reducing the purity of the diamond coating 5.

[0051] When depositing diamond coatings using chemical vapor deposition (CVD), the process temperature is typically above 700°C. At these high temperatures, iron / nickel and even chromium from stainless steel migrate to the surface. Upon contact with the diamond coating, these elements catalyze the formation of the graphite phase, thus damaging the diamond's spline properties. 3 Hybrid structure. To prevent the diffusion of iron / nickel in stainless steel, a first transition layer 2 is formed on the surface of the stainless steel substrate 12. The first transition layer 2 is made of any one of molybdenum, chromium, or tantalum. Molybdenum forms dense columnar crystals on the surface of the stainless steel, with tortuous grain boundaries, extending the diffusion path of iron / nickel; chromium forms a dense chromium oxide film on the surface of the stainless steel, blocking the diffusion channel of iron to the diamond coating 5.

[0052] To further prevent the upward diffusion of iron / nickel from the stainless steel substrate 12, a second transition layer 3 is formed on the surface of the first transition layer 2. The coefficient of thermal expansion of the second transition layer 3 is lower than that of the first transition layer 2. The material of the second transition layer 3 is any one of tungsten carbide, tantalum carbide, and tungsten boride. Taking tungsten carbide as an example: on the one hand, metal carbides have strong chemical inertness, and the iron / tungsten carbide interface has a high energy barrier, which can effectively lock atomic migration and effectively block a small number of iron and nickel atoms that have diffused from the first transition layer; on the other hand, the metal carbide in the second transition layer has a lower lattice mismatch with the growth layer above it, the chemical bond is more suitable, and therefore, the bonding strength is also higher.

[0053] To provide a growth template for diamond epitaxy and facilitate better growth of the diamond coating 5, a growth layer 4 is formed on the surface of the second transition layer 2. The growth layer 4 has a low mismatch rate with the diamond coating 5, allowing atoms at the interface between the two layers to "naturally connect," significantly reducing internal stress. This prevents the diamond coating 5 from cracking or peeling due to stress accumulation, providing a stable substrate for the continued growth of the diamond coating 5. The growth layer also possesses plastic deformation capability, further promoting the growth of the diamond coating 5. The growth layer 4 is made of any one of titanium nitride, titanium aluminum nitride, chromium aluminum nitride, or zinc nitride. The mismatch rate between titanium nitride and diamond is 3.7%, titanium aluminum nitride and diamond is 4.2%, chromium aluminum nitride and diamond is 4.2%, and zinc nitride and diamond is 2.8%. In some embodiments, the thickness of the growth layer 4 is 2 μm to 5 μm.

[0054] It is understood that the formation process of the first transition layer 2, the second transition layer 3, and the growth layer 4 of the present invention can be any one of chemical vapor deposition, physical vapor deposition, and atomic layer deposition.

[0055] After the first transition layer 2, the second transition layer 3, and the growth layer 4 are sequentially deposited on the surface of the component to be processed, the reaction chamber is evacuated in step S3 to a vacuum degree of 10.-3 mbar~10 -6 mbar, the deposition temperature in the reaction chamber is 700℃~900℃.

[0056] Carbon-containing gas and hydrogen are introduced into the reaction chamber. Under the action of plasma, the hydrogen first decomposes the carbon source into active carbon species. Then, by adjusting the process parameters, these active carbon species are guided to form a diamond crystal structure (sp). 3 Hybrid structures nucleate and grow on the surface of the growth layer, while inhibiting the growth of graphite (sp). 2 The formation of non-target structures (such as hybrid structures) is also involved. The formation process of a diamond coating specifically includes: (1) Hydrogen activation and carbon source cracking: Under the action of plasma, hydrogen is excited into active hydrogen species such as hydrogen atoms and hydrogen ions. These active hydrogen species collide with carbon source molecules, breaking the CH bonds in the carbon source. For example, CH4 (methane) will be gradually cracked into CH3 (methyl radical), CH2 (methylene radical), CH (methoxymethyl radical), etc. These "active carbon species" containing unpaired electrons constitute the direct "raw materials" of diamond lattice.

[0057] (2) Reduce graphite impurity formation and stabilize the deposition environment: In addition to introducing carbon-containing gas and hydrogen, oxygen or argon can also be introduced into the reaction chamber to optimize the deposition environment and control the quality of the diamond coating. Oxygen can preferentially react with non-diamond phases such as graphite and amorphous carbon to generate CO or CO2 gas, which is then discharged, significantly reducing graphite impurities in the diamond coating and improving the purity of the diamond coating; Argon can dilute the concentration of carbon-containing gas and hydrogen, avoiding local carbon source over-concentration that could lead to defects in the diamond coating.

[0058] (3) Diamond nucleation and growth: Regardless of whether the active carbon species are present, they will gather at the "defect sites" on the surface of the growth layer, first forming a "diamond nucleus" composed of several to dozens of carbon atoms (the core is sp). 3 (Hybrid structure); as active carbon species continue to diffuse to the crystal nucleus surface, they will follow a sp... 3 The hybridization process combines with the carbon atoms of the crystal nucleus, causing the crystal nucleus to grow continuously. At the same time, adjacent crystal nuclei gradually fuse together, eventually forming a continuous and dense diamond coating.

[0059] In some embodiments, by adjusting process parameters such as gas pressure, the ratio of reactive gases, reaction temperature, and deposition time, diamond coatings with different grain sizes can be formed to meet different application requirements. For example: (1) Micron-sized diamond: Under high CH4 concentration and low H atom concentration, there are many active carbon species, which are easy to aggregate and grow on the substrate surface to form larger grains. When large grains are piled up, the gaps between grains are large, and the surface shows obvious "unevenness", that is, the surface is rough. Large grains have a compact structure, fewer grain boundaries, and good wear resistance.

[0060] (2) Nanocrystalline diamond: Under high H atom concentration and low CH4 concentration, the low CH4 concentration reduces the number of active carbon species, avoiding excessive grain growth. The high H atom concentration continuously etches the small grains formed, preventing them from growing, and finally obtains nanoscale grains with a grain size of less than 100nm. Its surface is smooth and the friction coefficient is lower.

[0061] (3) Ultra-nano diamond: By using a higher power plasma source to excite the carbon source and precisely controlling the H atom concentration and auxiliary gas, it is possible to ensure that the crystal nucleus is always kept at 2nm~5nm, forming an extremely smooth diamond coating.

[0062] In some embodiments, the carbon-containing gas is methane, with a concentration of 1% to 5%, and the hydrogen concentration is 95% to 99%. This "high hydrogen, low carbon" ratio allows hydrogen to fully exert its activity-enhancing and impurity-suppressing effects, avoiding excessive carbon gas that could lead to the formation of large quantities of non-diamond phases such as graphite. In this invention, the final diamond coating thickness is 5 μm to 10 μm.

[0063] Example 1 This embodiment provides a method for forming a coating on a heating plate with an aluminum alloy substrate, including: Step S1: Provide a heating plate to be processed with an aluminum alloy substrate, and place the heating plate to be processed into the reaction chamber.

[0064] Step S2: Using chemical vapor deposition, an electroplated nickel layer, a chemically plated nickel-phosphorus alloy layer, a silicon carbide layer, and a diamond coating are sequentially formed on the surface of the heating plate to be treated. The coefficient of thermal expansion of the electroplated nickel layer is 13 × 10⁻⁶. -6 / K, with a thickness of 20μm, and a coefficient of thermal expansion of 12×10⁻⁶ for the electroless nickel-phosphorus alloy plating layer. -6 / K, with a thickness of 10μm, and a thermal expansion coefficient of 4.5×10⁻⁶. -6 / K, with a thickness of 5μm, and a coefficient of thermal expansion of 2.0×10⁻⁶. -6 / K, with a thickness of 5μm.

[0065] Example 2 This embodiment provides a method for forming a coating on a heating plate with a stainless steel substrate, including: Step S1: Provide a heating plate with a stainless steel base and place it inside the reaction chamber.

[0066] Step S2 involves sequentially forming a molybdenum layer, a tungsten carbide layer, a titanium nitride layer, and a diamond coating on the surface of the heating plate to be treated using chemical vapor deposition. The coefficient of thermal expansion of the molybdenum layer is 5.5 × 10⁻⁶. -6 / K, with a thickness of 1.5μm, and a thermal expansion coefficient of 5×10. -6 / K, with a thickness of 1μm, and a coefficient of thermal expansion of 2.0×10⁻⁶. -6 / K, with a thickness of 5μm. In this structure, based on the decreasing coefficients of thermal expansion of the molybdenum layer, tungsten carbide layer, and diamond coating, the plastic deformation capacity of the titanium nitride layer further enhances the crack resistance.

[0067] like Figure 4 As shown, the present invention provides a structural schematic diagram of a capacitively coupled plasma (CCP) processing device.

[0068] The capacitively coupled plasma processing device includes: a plasma reaction chamber 100, which is a plasma environment. Semiconductor components and the inner wall of the plasma reaction chamber 100 are exposed to the plasma environment. The plasma includes at least one of fluorine-containing plasma, chlorine-containing plasma, hydrogen-containing plasma, or oxygen-containing plasma.

[0069] The capacitively coupled plasma processing device further includes: a gas spray head 110 disposed within the plasma reaction chamber 100; the gas spray head 110 is connected to a gas supply device 111 via a mounting base 112 for supplying reaction gas into the plasma reaction chamber 100, and also serves as the upper electrode of the plasma reaction chamber 100. A base 121 opposite the gas spray head 110 is disposed within the plasma reaction chamber 100; an electrostatic chuck 120 is disposed above the base 121, and the electrostatic chuck 120 contains an adsorption electrode (not shown in the figure). The adsorption electrode is electrically connected to a DC power supply to generate electrostatic attraction to fix the substrate W to be processed, and plasma is used to process the substrate W. The electrostatic chuck 120 also serves as the lower electrode of the plasma reaction chamber 100, and a reaction region is formed between the upper and lower electrodes. At least one radio frequency power source 130 is applied to one of the upper or lower electrodes through a matching network 131 to generate a radio frequency electric field between the upper and lower electrodes, which is used to dissociate the reactive gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited-state atoms, molecules and free radicals. These active particles can undergo various physical and chemical reactions with the surface of the substrate W to be treated, thereby changing the morphology of the surface of the substrate W to be treated, thus completing the treatment process.

[0070] A focusing ring 122 and an insulating ring 123 surround the base 121, with the insulating ring 123 located below the focusing ring 122. The focusing ring 122 and insulating ring 123 are used to adjust the electric field or temperature distribution around the substrate, improving the uniformity of substrate processing. A covering ring 124 is located around the focusing ring 122, primarily to prevent plasma corrosion. A plasma confinement ring 125 surrounds the insulating ring 123, and the plasma confinement ring 125 has an exhaust channel. By appropriately setting the depth-to-width ratio of the exhaust channel, the plasma is confined to the reaction area between the upper and lower electrodes while simultaneously venting the reactive gas, preventing plasma leakage into the non-reactive area and causing damage to components in the non-reactive area. Inside the plasma reaction chamber 100, there is also an upper grounding ring 113, a middle grounding ring 115 below the plasma confinement ring 125, and a lower grounding ring 114 below the middle grounding ring 115. The middle grounding ring 115 and the lower grounding ring 114 are electrically connected to form a radio frequency grounding loop within the plasma reaction chamber 100.

[0071] In this embodiment, the semiconductor components exposed to the plasma environment include a base 121, a gas spray head 110, an upper grounding ring 113, a lower grounding ring 114, a focusing ring 122, an electrostatic chuck 120, and a plasma confinement ring 125.

[0072] like Figure 5 The diagram shown is a structural schematic of an inductively coupled plasma (ICP) processing device provided by the present invention.

[0073] The inductively coupled plasma (ICP) processing equipment includes a vacuum reaction chamber 200, with a gas injection port 201 on its side wall, containing a gas nozzle 202. An insulating window 213 is located at the top of the vacuum reaction chamber 200, and an inductively coupled coil 210 is connected to the insulating window 213. A radio frequency (RF) power source 211 applies RF voltage to the inductively coupled coil 210 through an RF matching network 212. The RF power from the RF power source 211 drives the inductively coupled coil 210 to generate a strong high-frequency alternating magnetic field, causing the low-pressure reaction gas inside the vacuum reaction chamber 200 to be ionized to generate plasma. A bottom electrode assembly, including an electrostatic chuck 220 and a base 221, is located at the bottom of the vacuum reaction chamber 200. The electrostatic chuck 220 is positioned above the base 221, generating electrostatic attraction to support and fix the substrate W to be processed during the process. Plasma contains a large number of active particles such as electrons, ions, excited-state atoms, molecules, and free radicals. These active particles can undergo various physical and chemical reactions with the surface of the substrate W to be treated, thereby changing the morphology of the surface of the substrate W and completing the treatment process.

[0074] A focusing ring 222 and an insulating ring 223 are arranged around the base 221, with the insulating ring 223 positioned below the focusing ring 222. The focusing ring 222 and the insulating ring 223 are used to adjust the electric field or temperature distribution around the substrate, improving the uniformity of the substrate processing. A covering ring 224 is arranged around the focusing ring 222, primarily to prevent plasma corrosion. A plasma confinement ring 225 is arranged around the insulating ring 223, used to confine the plasma within the reaction region between the upper and lower electrodes.

[0075] In this embodiment, the semiconductor components exposed to the plasma environment include a base 221, a gas nozzle 202, a focusing ring 222, a plasma confinement ring 225, a gas injection port 201, and an electrostatic chuck 220.

[0076] It is understood that in other embodiments, the plasma processing apparatus of the present invention can be various types of plasma processing apparatus that include the above-mentioned semiconductor components, such as chemical vapor deposition equipment, physical vapor deposition equipment, ion implantation equipment, electrochemical deposition equipment, etc. Figure 4 and Figure 5 This is merely an example and may include fewer or more components, or the arrangement of those components may be the same as or different from that shown in the figure.

[0077] In summary, the present invention provides a semiconductor component comprising a component body, wherein a first transition layer, a second transition layer, a growth layer, and a diamond coating are sequentially formed on the surface of the component body along its thickness direction; wherein the coefficients of thermal expansion of the first transition layer, the second transition layer, and the diamond coating decrease sequentially. The diamond coating significantly improves the hardness, corrosion resistance, and thermal uniformity of the semiconductor component at high temperatures; furthermore, by sequentially forming multilayer coatings (first transition layer, second transition layer) with gradually decreasing coefficients of thermal expansion on the surface of the component body on different substrates, thermal stress can be significantly reduced, coating cracking and peeling can be avoided, and the service life of the semiconductor component can be improved.

[0078] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0079] In the description of this invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0080] In the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0081] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0082] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A semiconductor component, characterized in that, include: Component body; In the thickness direction of the component body, a first transition layer, a second transition layer, a growth layer, and a diamond coating are sequentially formed on the surface of the component body; The coefficients of thermal expansion of the first transition layer, the second transition layer, and the diamond coating decrease sequentially.

2. The semiconductor component as described in claim 1, characterized in that, The first transition layer is made of metal.

3. The semiconductor component as described in claim 2, characterized in that, The main body of the component is made of aluminum.

4. The semiconductor component as described in claim 3, characterized in that, The material of the first transition layer includes any one of metallic nickel, metallic copper, and metallic molybdenum.

5. The semiconductor component as described in claim 3, characterized in that, The material of the second transition layer includes an amorphous alloy composed of any two or more of nickel, phosphorus, tungsten, copper, zinc, aluminum, iron, and boron.

6. The semiconductor component as described in claim 5, characterized in that, The material of the second transition layer includes any one of electroless nickel-phosphorus alloy, nickel-tungsten-phosphorus alloy, copper-zinc-aluminum alloy, and iron-boron amorphous alloy.

7. The semiconductor component as described in claim 3, characterized in that, The coefficient of thermal expansion of the growth layer is less than that of the second transition layer and greater than that of the diamond coating, and the growth layer contains at least one carbide layer.

8. The semiconductor component as described in claim 2, characterized in that, The main body of the component is made of stainless steel.

9. The semiconductor component as described in claim 8, characterized in that, The first transition layer is adapted to prevent the outward diffusion of iron and / or nickel from the stainless steel.

10. The semiconductor component as claimed in claim 9, characterized in that, The material of the first transition layer includes any one of molybdenum, chromium, and tantalum.

11. The semiconductor component as claimed in claim 8, characterized in that, The material of the second transition layer includes any one of tungsten carbide, tantalum carbide, and tungsten boride.

12. The semiconductor component as claimed in claim 8, characterized in that, The growth layer has the ability to undergo plastic deformation.

13. The semiconductor component as claimed in claim 12, characterized in that, The material of the growth layer includes any one of titanium nitride, titanium aluminum nitride, chromium aluminum nitride, and zinc nitride.

14. The semiconductor component as claimed in claim 1, characterized in that, The thickness of the diamond coating is 5μm to 10μm.

15. The semiconductor component as claimed in claim 1, characterized in that, The thickness of the growth layer is 2μm to 5μm.

16. The semiconductor component as claimed in claim 1, characterized in that, The diamond coating has a grain size of 2nm to 50μm.

17. A method for forming a coating on a semiconductor component as described in any one of claims 1 to 16, characterized in that, include: A component body to be processed is provided, and the component body to be processed is placed in a reaction chamber; A first transition layer, a second transition layer, and a growth layer are sequentially deposited on the surface of the component body to be processed. At least carbon-containing gas and hydrogen are introduced into the reaction chamber, and the plasma source is turned on. The carbon-containing gas and hydrogen dissociate into active particles, and the active particles form a diamond coating on the surface of the growth layer.

18. The coating formation method as described in claim 17, characterized in that, The concentration of the carbon-containing gas is 1% to 5%, and the concentration of the hydrogen gas is 95% to 99%.

19. The coating formation method as described in claim 17, characterized in that, It also includes introducing oxygen or argon into the reaction chamber before turning on the plasma source.

20. A plasma processing apparatus, characterized in that, It includes a reaction chamber, wherein a semiconductor component as described in any one of claims 1 to 16 is disposed within the reaction chamber.

21. The plasma processing apparatus as claimed in claim 20, characterized in that, When the plasma processing device is a capacitively coupled plasma processing device, the semiconductor component includes at least one of the following: a base, a gas spray head, an upper grounding ring, a lower grounding ring, a focusing ring, an electrostatic chuck, and a plasma confinement ring.

22. The plasma processing apparatus as described in claim 20, characterized in that, When the plasma processing device is an inductively coupled plasma processing device, the semiconductor component includes at least one of the following: a base, a gas nozzle, a focusing ring, a plasma confinement ring, a gas injection port, and an electrostatic chuck.

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