Particle trap for vacuum pump, vacuum pump, semiconductor manufacturing apparatus

Abstract

Provided are a particle trap for a vacuum pump, a vacuum pump, and a semiconductor manufacturing apparatus that suppress intrusion of particles into the vacuum pump. The particle trap for a vacuum pump includes a first pipe having a first end portion, a second end portion, a first opening portion on the first end portion side, a second opening portion on the second end portion side, a first inner diameter, and a first center line extending in a first direction; a second pipe having a third end portion, a fourth end portion, a third opening portion on the third end portion side, a fourth opening portion on the fourth end portion side, a second inner diameter smaller than the first inner diameter, and a second center line extending in a second direction orthogonal to the first direction, and connected to a side surface of the first pipe; a third pipe having a fifth end portion, a sixth end portion, a fifth opening portion on the fifth end portion side, a sixth opening portion on the sixth end portion side, a third inner diameter smaller than the first inner diameter, and a third center line extending in at least a portion of the second direction, and connected to a portion of the side surface opposite the second pipe with the first pipe interposed therebetween; a first plate that plugs the first opening portion; and a second plate that plugs the second opening portion, the fifth end portion being disposed inside the first pipe, and the fifth end portion of the third pipe being bent in a direction approaching the first plate inside the first pipe.

Description

[0001] Related applications

[0002] This application enjoys priority based on Japanese Patent Application No. 2025-048747 (filed on March 24, 2025). This application incorporates the entire contents of the basic application by reference to that basic application. Technical Field

[0003] Embodiments of the present invention relate to a particle trap for a vacuum pump, a vacuum pump, and a semiconductor manufacturing apparatus. Background Technology

[0004] Semiconductor devices are manufactured through various processes such as film formation and film etching. For example, in chemical vapor deposition (CVD), a raw material gas is supplied to a chamber after being depressurized by a vacuum pump to deposit a film on a semiconductor substrate. Unused raw material gas from film formation is exhausted from the chamber to an exhaust pipe using a vacuum pump.

[0005] For example, reaction products may deposit on the inner wall of the exhaust pipe due to exhaust gas exiting the chamber. Sometimes, these reaction products deposited on the inner wall of the exhaust pipe may peel off and become particles, which may then enter the vacuum pump. If these particles enter the vacuum pump, the pump's performance may be reduced, or the pump may malfunction. Summary of the Invention

[0006] Embodiments of the present invention provide a particle trap for a vacuum pump, a vacuum pump, and a semiconductor manufacturing apparatus for suppressing particle intrusion into a vacuum pump.

[0007] A particle trap for a vacuum pump according to an embodiment includes: a first tube having a first end, a second end, a first opening on the side of the first end, a second opening on the side of the second end, a first inner diameter, and a first center line extending in a first direction; a second tube having a third end, a fourth end, a third opening on the side of the third end, a fourth opening on the side of the fourth end, a second inner diameter smaller than the first inner diameter, and a second center line extending in a second direction orthogonal to the first direction, and connected to a side of the first tube; a third tube having a fifth end, a sixth end, a fifth opening on the side of the fifth end, a sixth opening on the side of the sixth end, a third inner diameter smaller than the first inner diameter, and at least a portion of a third center line extending in the second direction, and connected to a portion of the side of the first tube sandwiched on the opposite side of the second tube; a first plate blocking the first opening; and a second plate blocking the second opening, wherein the fifth end is disposed inside the first tube, and inside the first tube, the fifth end of the third tube bends toward the first plate. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of a semiconductor manufacturing apparatus equipped with a particle trap for a vacuum pump according to the first embodiment.

[0009] Figure 2 This is a perspective view of the particle trap for a vacuum pump according to the first embodiment.

[0010] Figure 3 This is a cross-sectional view of the particle trap for a vacuum pump according to the first embodiment.

[0011] Figure 4 This is a cross-sectional view of the particle trap for a vacuum pump according to the first embodiment.

[0012] Figure 5 This is an explanatory diagram illustrating the function and effect of the particle trap for the vacuum pump according to the first embodiment.

[0013] Figure 6 This is a cross-sectional view of a particle trap for a vacuum pump in a first variation of the first embodiment.

[0014] Figure 7 This is a cross-sectional view of a particle trap for a vacuum pump in a second variation of the first embodiment.

[0015] Figure 8 This is a cross-sectional view of a particle trap for a vacuum pump, a third variation of the first embodiment.

[0016] Figure 9 This is a cross-sectional view of a particle trap for a vacuum pump, which is a fourth variation of the first embodiment.

[0017] Figure 10 This is a side view of the particle trap for a vacuum pump according to the second embodiment. Detailed Implementation

[0018] In this specification, the same or similar parts are labeled with the same reference numerals, and sometimes repeated descriptions are omitted.

[0019] (First Implementation)

[0020] The vacuum pump particle trap according to the first embodiment includes: a first tube having a first end, a second end, a first opening on the side of the first end, a second opening on the side of the second end, a first inner diameter, and a first center line extending in a first direction; a second tube having a third end, a fourth end, a third opening on the side of the third end, a fourth opening on the side of the fourth end, a second inner diameter smaller than the first inner diameter, and a second center line extending in a second direction orthogonal to the first direction, and connected to the side of the first tube; a third tube having a fifth end, a sixth end, a fifth opening on the side of the fifth end, a sixth opening on the side of the sixth end, a third inner diameter smaller than the first inner diameter, and at least a portion of a third center line extending in the second direction, and connected to the side of the first tube sandwiched on the opposite side of the second tube; a first plate blocking the first opening; and a second plate blocking the second opening, wherein the fifth end is disposed inside the first tube, and the fifth end of the third tube inside the first tube is bent toward the first plate.

[0021] Figure 1 This is a schematic diagram of a semiconductor manufacturing apparatus equipped with the particle trap for a vacuum pump according to the first embodiment. The semiconductor manufacturing apparatus is a CVD apparatus 100.

[0022] The CVD unit 100 includes a chamber 10, a pressure control valve 12, a vacuum pump 14, a pest control device 16, a gas piping 18, and a particle trap 20 for the vacuum pump.

[0023] The chamber 10 includes a base 10a, a gas supply port 10b, and a gas exhaust port 10c. A film is deposited on the semiconductor substrate W in the chamber 10.

[0024] When depositing a film on a semiconductor substrate W, the semiconductor substrate W is placed on a substrate 10a. The semiconductor substrate W is heated by a heater (not shown). The raw material gas for the film flows through the gas supply port 10b and deposits the film on the semiconductor substrate W. Unconsumed raw material gas and other waste gas from film formation is discharged from the gas exhaust port 10c to the outside of the chamber 10.

[0025] The pressure control valve 12 is located downstream of the chamber 10. The pressure control valve 12 has the function of adjusting the pressure in the chamber 10.

[0026] Vacuum pump 14 is located downstream of pressure control valve 12. Vacuum pump 14 has the function of reducing the pressure in chamber 10. Vacuum pump 14 is, for example, a dry pump.

[0027] The purifying device 16 is located downstream of the vacuum pump 14. The purifying device 16 has the function of rendering the exhaust gas discharged from the chamber 10 harmless. The exhaust gas rendered harmless by the purifying device 16 is discharged outside the CVD unit 100.

[0028] Gas piping 18 connects chamber 10, pressure control valve 12, vacuum pump 14, and purifying device 16. Gas piping 18 serves as the flow path for exhaust gas discharged from chamber 10.

[0029] A particulate trap 20 for a vacuum pump is, for example, installed on the gas piping 18 between the pressure control valve 12 and the vacuum pump 14. The particulate trap 20 for a vacuum pump has the function of preventing particles from entering the vacuum pump 14.

[0030] In addition, the particle trap 20 for the vacuum pump can also be integrated with the vacuum pump 14 as part of the vacuum pump 14.

[0031] Figure 2 This is a perspective view of the particle trap for a vacuum pump according to the first embodiment.

[0032] The vacuum pump particle trap 20 of the first embodiment includes a main tube 21 (first tube), an inlet tube 22 (second tube), an exhaust tube 23 (third tube), a first plate 26, a second plate 27, and an O-ring 29.

[0033] The intake pipe 22 is connected, for example, to the gas piping 18 on the side of chamber 10. The exhaust pipe 23 is connected, for example, to the gas piping 18 on the side of vacuum pump 14.

[0034] Figure 3 This is a cross-sectional view of the particle trap for a vacuum pump according to the first embodiment. Figure 3 This is an example of the first cross-section.

[0035] Figure 4 This is a side view of the particle trap for a vacuum pump according to the first embodiment. It is a side view from the side of the first plate 26, with the first plate 26 removed.

[0036] The main body pipe 21 has a first end E1, a second end E2, a first opening O1, a second opening O2, a first inner diameter φ1, and a first centerline C1. The main body pipe 21 may have a cylindrical shape, for example.

[0037] The main tube 21 has a first opening O1 on the first end E1 side. The second opening O2 is located on the second end E2 side. The first center line C1 extends in the first direction.

[0038] The first inner diameter φ1 of the main tube 21 is, for example, 100 mm or more and 400 mm or less. The main tube 21 is, for example, stainless steel (SUS).

[0039] The intake pipe 22 is connected to the side of the main pipe 21.

[0040] The intake pipe 22 has a third end E3, a fourth end E4, a third opening O3, a fourth opening O4, a second inner diameter φ2, and a second centerline C2. The intake pipe 22 may have a cylindrical shape, for example.

[0041] The third opening O3 of the intake pipe 22 is located on the third end E3 side. The fourth end E4 is located on the fourth end E4 side. The second centerline C2 of the intake pipe 22 extends in a second direction orthogonal to the first direction.

[0042] The second inner diameter φ2 of the intake pipe 22 is smaller than the first inner diameter φ1. The second inner diameter φ2 is, for example, 50 mm or more and 200 mm or less. The intake pipe 22 is, for example, made of stainless steel (SUS).

[0043] The exhaust pipe 23 is connected to the side of the main body pipe 21. The exhaust pipe 23 is connected to the side of the main body pipe 21, sandwiching the main body pipe 21 and on the opposite side from the intake pipe 22.

[0044] The exhaust pipe 23 has a fifth end E5, a sixth end E6, a fifth opening O5, a sixth opening O6, a third inner diameter φ3, and a third center line C3. The exhaust pipe 23 may have a cylindrical shape, for example.

[0045] The fifth opening O5 of the exhaust pipe 23 is located on the fifth end E5 side. The sixth opening O6 is located on the sixth end E6 side.

[0046] At least a portion of the third centerline C3 of the exhaust pipe 23 extends in the second direction.

[0047] The third inner diameter φ3 of the exhaust pipe 23 is smaller than the first inner diameter φ1. The third inner diameter φ3 is, for example, 50 mm or more and 200 mm or less. The exhaust pipe 23 is, for example, made of stainless steel (SUS).

[0048] The first plate 26 blocks the first opening O1 of the main tube 21. The second plate 27 blocks the second opening O2 of the main tube 21.

[0049] The fifth end E5 of the exhaust pipe 23 is located inside the main body pipe 21. The sixth end E6 of the exhaust pipe 23 is located, for example, outside the main body pipe 21.

[0050] The exhaust pipe 23 is bent inside the main body pipe 21. The exhaust pipe 23 is, for example, an L-shaped pipe.

[0051] Inside the main body pipe 21, the fifth end E5 of the exhaust pipe 23 bends toward the first plate 26. Inside the main body pipe 21, the fifth opening O5 of the exhaust pipe 23 bends toward the first plate 26.

[0052] The third center line C3 near the fifth opening O5 of the exhaust pipe 23 extends, for example, in the first direction. The third center line C3 near the sixth opening O6 of the exhaust pipe 23 extends, for example, in the second direction. The third center line C3 of the exhaust pipe 23 outside the main body pipe 21 extends, for example, in the second direction.

[0053] The first distance in the first direction between the fifth end E5 of the exhaust pipe 23 and the first plate 26 ( Figure 3 d1 in the first direction is, for example, less than the second distance in the first direction between the third end E3 of the intake pipe 22 and the first plate 26. Figure 3 (d2 in the text). The first distance d1 is, for example, more than 1 and less than 4 times the second inner diameter φ2 of the intake pipe 22.

[0054] The line extending from the second centerline C2 of the intake pipe 22 overlaps, for example, with the third centerline C3 of the exhaust pipe 23 near the sixth opening O6. The line extending from the second centerline C2 of the intake pipe 22 overlaps, for example, with the third centerline C3 of the exhaust pipe 23 outside the main body pipe 21. The intake pipe 22 and the exhaust pipe 23 outside the main body pipe 21 are arranged coaxially.

[0055] like Figure 3 As shown, in a first cross-section passing through the first centerline C1 of the main body tube 21 and parallel to the first and second directions, the side surface of the exhaust pipe 23 inside the main body tube 21 on the side of the intake pipe 22 is a curved surface. In the first cross-section, the side surface of the exhaust pipe 23 inside the main body tube 21 on the side of the intake pipe 22 is an inclined surface that gradually moves away from the intake pipe 22 towards the second plate 27.

[0056] The third distance in the second direction between the third centerline C3 near the fifth opening O5 of the exhaust pipe 23 and the third end E3 of the intake pipe 22 ( Figure 3 d3) is, for example, a fourth distance in the second direction greater than the first centerline C1 of the main tube 21 and the third end E3. Figure 3 (d4 in the middle).

[0057] The third end E3 of the intake pipe 22 is, for example, located inside the main body pipe 21. The first length of the intake pipe 22 in the second direction inside the main body pipe 21 ( Figure 3 L1 in the example is, for example, more than 1 / 20 and less than 1 / 5 of the second inner diameter φ2 of the intake pipe 22.

[0058] The first plate 26, for example, can be separated from the main tube 21. The second plate 27, for example, can be separated from the main tube 21.

[0059] The first plate 26 and the second plate 27 are, for example, blank flanges. The first plate 26 and the second plate 27 are fixed to the main tube 21, for example, using clamps not shown.

[0060] For example, an O-ring 29 is provided between the first plate 26 and the main body pipe 21. For example, an O-ring 29 is provided between the second plate 27 and the main body pipe 21. The O-ring 29 is provided to suppress exhaust leakage.

[0061] Next, the function and effect of the vacuum pump particle trap 20 of the first embodiment will be explained.

[0062] In use Figure 1 In the case of the CVD apparatus 100 shown depositing a film on a semiconductor substrate W, the exhaust gas, such as raw material gas that is not consumed during the film formation, is discharged from the chamber 10 to the gas piping 18 using a vacuum pump 14.

[0063] For example, due to the exhaust gas discharged from chamber 10, reaction products deposit on the inner wall of gas piping 18. Furthermore, for example, if the CVD apparatus 100 is not equipped with a particle trap 20 for the vacuum pump, the reaction products deposited on the inner wall of gas piping 18 may sometimes detach and become particles, which may then enter the vacuum pump 14. When particles enter the vacuum pump, there are concerns about reduced performance of the vacuum pump 14 or potential malfunction. Therefore, it is desirable to suppress the intrusion of particles into the vacuum pump 14.

[0064] Figure 5 This is an explanatory diagram illustrating the function and effect of the particle trap for the vacuum pump according to the first embodiment. Figure 5 Is with Figure 3 The corresponding sectional view.

[0065] exist Figure 5 In the diagram, arrows indicate the flow of exhaust gas. Additionally, in... Figure 5 The figure shows particles 40 contained in the exhaust gas.

[0066] like Figure 5 As shown, exhaust flows from intake pipe 22 into main body pipe 21. The incoming exhaust collides with the side of exhaust pipe 23 and spreads towards the first plate 26. The exhaust spreading towards the first plate 26 enters exhaust pipe 23 through the fifth opening O5 and is discharged to the outside from main body pipe 21.

[0067] like Figure 5 As shown, the particles 40 contained in the exhaust collide with the side of the exhaust pipe 23 and fall towards the second plate 27 along the inclination of the side. The particles 40 falling towards the second plate 27 accumulate at the bottom of the main pipe 21. Therefore, it is possible to prevent the particles 40 from entering the exhaust pipe 23 and from being discharged to the outside from the main pipe 21.

[0068] Particles 40 contained in the exhaust gas are captured by the particulate trap 20 for the vacuum pump, preventing the particles 40 from entering the vacuum pump 14. Therefore, by using the particulate trap 20 for the vacuum pump, it is possible to prevent the performance degradation or malfunction of the vacuum pump 14.

[0069] From the viewpoint of suppressing the inflow of particles 40 contained in the exhaust into the exhaust pipe 23, it is preferable to have a first distance in a first direction between the fifth end E5 of the exhaust pipe 23 and the first plate 26. Figure 3 d1) is less than the second distance in the first direction between the third end E3 of the intake pipe 22 and the first plate 26. Figure 3 (d2 in the middle).

[0070] From the viewpoint of expanding the exhaust flow path and increasing the exhaust conductance in the particulate trap 20 for the vacuum pump, the first distance in the first direction between the fifth end E5 of the exhaust pipe 23 and the first plate 26 ( Figure 3 The first distance d1 is preferably larger than the second inner diameter φ2 of the intake pipe 22. The first distance d1 is preferably more than 1 times the second inner diameter φ2 of the intake pipe 22, and more preferably more than 1.5 times.

[0071] From the viewpoint of expanding the exhaust flow path and increasing the exhaust flow conduction in the particulate trap 20 for the vacuum pump, the third distance in the second direction between the third centerline C3 near the fifth opening O5 of the exhaust pipe 23 and the third end E3 of the intake pipe 22 is preferred. Figure 3 d3) is greater than the fourth distance in the second direction between the first centerline C1 and the third end E3 of the main tube 21. Figure 3 (d4 in the middle).

[0072] From the viewpoint of suppressing the spread of exhaust gas from the third end E3 of the intake pipe 22 to the upper surface of the inner wall of the main pipe 21, thereby causing the reaction products to adhere to the upper surface of the inner wall of the main pipe 21, the third end E3 of the intake pipe 22 is preferably located inside the main pipe 21. From the above viewpoint, the first length (in the second direction) of the intake pipe 22 inside the main pipe 21 is... Figure 3 L1 in the air intake pipe 22 is preferably 1 / 20 or more of the second inner diameter φ2, and more preferably 1 / 10 or more.

[0073] From the viewpoint of facilitating maintenance of the particulate trap 20 for the vacuum pump, it is preferable that the first plate 26 and the second plate 27 can be separated from the main tube 21. For example, it is also possible to have a structure in which either the first plate 26 or the second plate 27 can be separated from the main tube 21. Alternatively, if ease of maintenance is sacrificed, it is also possible to configure it so that neither the first plate 26 nor the second plate 27 can be separated from the main tube 21.

[0074] The example given is that the main pipe 21, the intake pipe 22, and the exhaust pipe 23 are cylindrical, but the main pipe 21, the intake pipe 22, and the exhaust pipe 23 are not necessarily limited to cylindrical shapes.

[0075] According to the first embodiment, the particulate trap 20 for vacuum pumps can suppress the intrusion of particles 40 contained in exhaust gas into the vacuum pump 14.

[0076] (First variation)

[0077] In the first variation of the first embodiment, the particle trap for a vacuum pump has a first cross-section that passes through the first centerline and is parallel to the first and second directions. The distance in the first direction between the fifth end near the second tube and the first plate is smaller than the distance in the first direction between the fifth end away from the second tube and the first plate.

[0078] Figure 6 This is a cross-sectional view of a particle trap for a vacuum pump in a first variation of the first embodiment. Figure 6 It is the same as the first embodiment. Figure 3 The corresponding diagram. Figure 6 This is an example of the first cross-section.

[0079] like Figure 6 As shown, in the first cross-section of the vacuum pump particle trap 20a of the first modification of the first embodiment, the distance in the first direction between the fifth end E5 of the exhaust pipe 23 near the inlet pipe 22 and the first plate 26 is ( Figure 6 d1x) is less than the distance in the first direction between the fifth end E5, which is farther away from the intake pipe 22, and the first plate 26. Figure 6 (d1y in the middle).

[0080] According to the first modified example of the particulate trap 20a for vacuum pumps, for example, it is possible to further suppress the entry of particles 40 contained in the exhaust gas into the exhaust pipe 23.

[0081] According to the first variation of the first embodiment, the vacuum pump particle trap 20a can suppress the intrusion of particles 40 contained in the exhaust gas into the vacuum pump 14.

[0082] (Second variation)

[0083] In the second variation of the first embodiment, the particle trap for a vacuum pump has a first cross-section that passes through the first centerline and is parallel to the first and second directions. The distance in the first direction between the fifth end near the second tube and the first plate is greater than the distance in the first direction between the fifth end away from the second tube and the first plate.

[0084] Figure 7 This is a cross-sectional view of a particle trap for a vacuum pump in a second variation of the first embodiment. Figure 7 It is the same as the first embodiment. Figure 3 The corresponding diagram. Figure 7 This is an example of the first cross-section.

[0085] like Figure 7 As shown, in the first cross-section of the vacuum pump particle trap 20b of the second variation of the first embodiment, the distance in the first direction between the fifth end E5 of the exhaust pipe 23 near the inlet pipe 22 and the first plate 26 is ( Figure 7 d1x) is greater than the distance in the first direction between the fifth end E5, which is farther away from the intake pipe 22, and the first plate 26. Figure 7 (d1y in the middle).

[0086] According to the second modification of the particulate filter 20b for vacuum pumps, for example, the exhaust flow path can be expanded, and the exhaust flow conductance in the particulate filter 20b for vacuum pumps can be increased.

[0087] According to the second variation of the first embodiment, the vacuum pump particle trap 20b can suppress the intrusion of particles 40 contained in the exhaust gas into the vacuum pump 14.

[0088] (Third variation)

[0089] In the third variation of the first embodiment, the third end of the second tube of the particle trap for the vacuum pump is not located inside the first tube.

[0090] Figure 8 This is a cross-sectional view of a particle trap for a vacuum pump, a third variation of the first embodiment. Figure 8 It is the same as the first embodiment. Figure 3 The corresponding diagram.

[0091] like Figure 8 As shown, in the third variation of the first embodiment, the third end E3 of the air inlet pipe 22 of the particle trap 20c for the vacuum pump is not located inside the main body pipe 21.

[0092] According to the third modification of the particulate filter 20c for vacuum pumps, for example, the exhaust flow path can be expanded, and the exhaust flow conductance in the particulate filter 20c for vacuum pumps can be increased.

[0093] According to the third variation of the first embodiment, the vacuum pump particle trap 20c can suppress the intrusion of particles 40 contained in the exhaust gas into the vacuum pump 14.

[0094] (Fourth variation)

[0095] In the fourth variation of the first embodiment, the particle trap for a vacuum pump does not overlap with the third center line of the third tube near the sixth opening. Furthermore, the third center line of the third tube near the sixth opening is closer to the first plate than the second center line.

[0096] Figure 9 This is a cross-sectional view of a particle trap for a vacuum pump, which is a fourth variation of the first embodiment. Figure 9 It is the same as the first embodiment. Figure 3 The corresponding diagram.

[0097] like Figure 9 As shown, in the fourth variation of the vacuum pump particle trap 20d of the first embodiment, the line extending the second center line C2 of the inlet pipe 22 does not overlap with the third center line C3 of the exhaust pipe 23 near the sixth opening O6. Furthermore, the third center line C3 of the exhaust pipe 23 near the sixth opening O6 is closer to the first plate 26 than the second center line C2 of the inlet pipe 22.

[0098] According to the fourth variation of the vacuum pump particle trap 20d, for example, it is possible to further suppress the entry of particles 40 contained in the exhaust gas into the exhaust pipe 23.

[0099] According to the fourth variation of the first embodiment, the vacuum pump particle trap 20d can suppress the intrusion of particles 40 contained in the exhaust gas into the vacuum pump 14.

[0100] Based on the first embodiment and its variations, a particle trap for vacuum pumps that suppresses particle intrusion into the vacuum pump can be realized.

[0101] (Second Implementation)

[0102] The particle trap for a vacuum pump in the second embodiment differs from the particle trap for a vacuum pump in the first embodiment in that it also includes a filter covering the fifth opening. Hereinafter, some descriptions that are repeated in the first embodiment will be omitted.

[0103] Figure 10 This is a side view of the particle trap for a vacuum pump according to the second embodiment. Figure 10 It is the same as the first embodiment. Figure 4 The corresponding diagram.

[0104] The vacuum pump particle trap 20x according to the second embodiment includes a main tube 21 (first tube), an inlet tube 22 (second tube), an exhaust tube 23 (third tube), a first plate 26, a second plate 27, an O-ring 29, and a filter 50.

[0105] The filter 50 covers the fifth opening O5 of the exhaust pipe 23. The filter 50 is, for example, a central ring with mesh.

[0106] Filter 50 prevents particles 40 contained in the exhaust from entering the exhaust pipe 23.

[0107] According to the second embodiment, a particle trap for vacuum pumps can be realized to suppress the intrusion of particles into the vacuum pump.

[0108] In the first and second embodiments, a CVD apparatus was used as an example of a semiconductor manufacturing apparatus. However, the semiconductor manufacturing apparatus of the present invention is not limited to a CVD apparatus and can also be applied to other semiconductor manufacturing apparatuses that use vacuum pumps.

[0109] In the first and second embodiments, a dry pump was used as an example of a vacuum pump, but the vacuum pump of the present invention is not limited to a dry pump and can also be applied to other vacuum pumps.

[0110] Several embodiments of the present invention have been described, but these embodiments are provided as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. For example, the constituent elements of one embodiment can be substituted or modified with the constituent elements of other embodiments. These embodiments or variations thereof are included in the scope or spirit of the invention and are included within the scope of the invention as described in the claims and its equivalents.

[0111] Explanation of reference numerals in the attached figures

[0112] 14 Vacuum Pumps

[0113] 20 Particle Collector for Vacuum Pumps

[0114] 21 Main tube (first tube) 22 Inlet tube (second tube) 23 Exhaust tube (third tube) 26 First plate 27 Second plate 50 Filter 100 CVD device (semiconductor manufacturing device) d1 First distance d2 Second distance d3 Third distance d4 Fourth distance C1 First centerline C2 Second centerline C3 Third centerline E1 First end E2 Second end E3 Third end E4 Fourth end E5 Fifth end E6 Sixth end L1 First length O1 First opening O2 Second opening O3 Third opening O4 Fourth opening O5 Fifth opening O6 Sixth opening φ1 First inner diameter φ2 Second inner diameter φ3 Third inner diameter

Claims

1. A particle collector for a vacuum pump, comprising: The first tube has a first end, a second end, a first opening on the side of the first end, a second opening on the side of the second end, a first inner diameter, and a first centerline extending in a first direction; The second tube has a third end, a fourth end, a third opening on the side of the third end, a fourth opening on the side of the fourth end, a second inner diameter smaller than the first inner diameter, and a second center line extending in a second direction orthogonal to the first direction, and is connected to the side of the first tube. The third tube has a fifth end, a sixth end, a fifth opening on the side of the fifth end, a sixth opening on the side of the sixth end, a third inner diameter smaller than the first inner diameter, and a third center line extending in the second direction in at least a portion thereof, and is connected to the portion on the side opposite to the second tube that is sandwiched between the first tube. The first plate blocks the first opening; as well as The second plate blocks the second opening. The fifth end is disposed inside the first tube, and inside the first tube, the fifth end of the third tube bends toward the first plate.

2. The particle collector for a vacuum pump as described in claim 1, wherein, The third center line near the fifth opening extends in the first direction.

3. The particle collector for a vacuum pump as described in claim 1, wherein, The sixth end is disposed outside the first tube, and the third center line near the sixth opening extends in the second direction.

4. The particle collector for a vacuum pump as described in claim 3, wherein, The line extending from the second center line overlaps with the third center line of the third tube near the sixth opening.

5. The particle collector for a vacuum pump as described in claim 1, wherein, The first distance in the first direction between the fifth end and the first plate is smaller than the second distance in the first direction between the third end and the first plate.

6. The particle collector for a vacuum pump as described in claim 5, wherein, The first distance is more than 1 and less than 4 times the second inner diameter.

7. The particle trap for a vacuum pump as described in claim 1, wherein, The third distance in the second direction between the third center line near the fifth opening and the third end is greater than the fourth distance in the second direction between the first center line and the third end.

8. The particle trap for a vacuum pump as described in claim 1, wherein, In a first cross-section passing through the first centerline and parallel to the first and second directions, the side surface of the second tube side of the third tube inside the first tube is curved.

9. The particle trap for a vacuum pump as described in claim 1, wherein, The third end is located inside the first tube.

10. The particle trap for a vacuum pump as described in claim 1, wherein, The first length of the second tube inside the first tube in the second direction is more than 1 / 20 and less than 1 / 5 of the second inner diameter.

11. The particle trap for a vacuum pump as described in claim 1, wherein, The first inner diameter is more than 1.5 times and less than 5 times the second inner diameter and the third inner diameter.

12. The particle trap for a vacuum pump as described in claim 1, wherein, The first plate and the second plate are separable from the first tube.

13. The particle trap for a vacuum pump as described in claim 1, wherein, It also includes a filter that covers the fifth opening.

14. A vacuum pump comprising the particle trap for a vacuum pump as described in claim 1.

15. A semiconductor manufacturing apparatus comprising the particle trap for a vacuum pump as described in claim 1.

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