Semiconductor chamber and anneal apparatus

Abstract

The embodiment of the present application provides a semiconductor chamber and annealing device, the semiconductor chamber comprises a cavity, and a blowing device for removing metal contaminants in the cavity, the blowing device comprises at least two gas inlet pipes and a flow uniformizing structure, wherein the flow uniformizing structure is arranged in the cavity and has a flow uniformizing cavity; the at least two gas inlet pipes are communicated with the flow uniformizing cavity and used for conveying at least two kinds of gases to the flow uniformizing cavity respectively, so that the at least two kinds of gases flow into the inside of the cavity after mixing in the flow uniformizing cavity, and the at least two kinds of gases are used for reacting to generate free radicals capable of combining with the metal contaminants. The semiconductor chamber and annealing device provided by the embodiment of the present application can not only effectively remove the metal contaminants in the chamber, but also do not need to disassemble and clean the chamber, so that the equipment maintenance time and the equipment operation cost are reduced, the normal operation time of the equipment is increased, the production capacity is improved, in addition, the uncertainty and instability factors in the subsequent process are reduced, and the process reliability is improved.

Description

[0001] This application is a divisional application of Chinese Patent Application No. 202010856751.9, entitled "Semiconductor Chamber and Annealing Apparatus", filed on August 24, 2020. Technical Field

[0002] This invention relates to the field of semiconductor manufacturing technology, and more specifically, to a semiconductor chamber and annealing apparatus. Background Technology

[0003] As integrated circuit manufacturing technology continues to advance and feature sizes continue to shrink, there is a need for continuous improvement of process equipment and optimization of processes. For example, higher requirements are placed on various process indicators, including metal contamination. Especially in the processing stage, metal contamination sources are often unavoidably introduced during the processing and forming of high-purity quartz materials, including the chambers, which worsens the level of metal contamination after the process.

[0004] For example, in medium and high temperature annealing processes where the process gas is H2, the activity of metal ions increases at high temperatures, and the corresponding amount of detected metal contamination also increases exponentially. To solve the problem of metal contamination, the current approach is to disassemble and clean the chamber, replace potentially contaminated components, and clean the relevant wafer transport areas after it is found that the metal contamination in the annealing unit exceeds the standard.

[0005] However, the above-mentioned disassembly and cleaning methods not only increase equipment maintenance time and shorten the normal operating time of the equipment within the cycle, reducing production capacity; but also cannot guarantee that residual and continuously seeping metal contaminants can be effectively removed after disassembly and cleaning, increasing the uncertainty and instability of subsequent processes; in addition, more spare parts need to be stocked, increasing equipment operating costs. Summary of the Invention

[0006] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor chamber and annealing device, which can not only effectively remove metal contamination in the chamber, but also eliminate the need to disassemble and clean the chamber, thereby reducing equipment maintenance time and equipment operating costs, increasing equipment uptime and improving production capacity. In addition, it reduces the uncertainty and instability factors in subsequent processes, and improves process reliability.

[0007] To achieve the above objectives, embodiments of the present invention provide a semiconductor chamber, including a cavity and a purging device for removing metal contaminants from the cavity. The purging device includes at least two inlet pipes and a flow equalization structure. The cavity is a tubular cavity with a closed end and an open end. The flow equalization structure is disposed within the cavity and adjacent to the closed end, forming a flow equalization cavity with the closed end. The at least two inlet pipes extend from the open end and communicate with the flow equalization cavity. The outlets of the at least two inlet pipes are located in the flow equalization cavity and are used to deliver at least two gases to the flow equalization cavity. The outlets of the outlets of the at least two inlet pipes face the inner wall of the closed end so that the at least two gases are mixed in the flow equalization cavity and flow into the interior of the cavity. The at least two gases are used to react and generate free radicals that can bind to the metal contaminants.

[0008] Optionally, the flow equalization structure includes a flow equalization plate, which divides the cavity into a flow equalization space and a process space, wherein the flow equalization space serves as the flow equalization cavity; and the flow equalization plate is provided with a plurality of air outlets for connecting the flow equalization space and the process space.

[0009] Optionally, the flow equalization plate is used to position the flow equalization space above the process space; the outlet ends of the at least two air inlet pipes pass vertically upward from the bottom of the cavity through the flow equalization plate and extend into the flow equalization space.

[0010] Optionally, the plurality of air outlets are distributed on a plurality of circumferences with different radii centered on the center of the radial section of the flow equalizer, and the plurality of air outlets on each circumference are evenly distributed relative to the center of the circle. The diameters of the air outlets on different circumferences are different, and the smaller the diameter of the circumference, the smaller the diameter and / or number of the air outlets on the circumference; and / or, In at least one set of two adjacent circumferences, the air vents on one of the circumferences are staggered with the air vents on the other circumference.

[0011] Optionally, a plurality of first connecting portions are provided at intervals along the circumference of the outer peripheral wall of the flow equalizer; and correspondingly, a plurality of second connecting portions are provided at intervals on the side wall of the cavity. A positioning groove is provided on the first connecting part, and the second connecting part is located in the positioning groove; or, a positioning groove is provided on the second connecting part, and the first connecting part is located in the positioning groove, so as to define the position of the flow equalization plate in the cavity.

[0012] Optionally, the semiconductor chamber further includes an exhaust structure for discharging exhaust gas from the chamber. The exhaust structure includes an exhaust port disposed at the bottom of the chamber, an exhaust pipe connected to the exhaust port, a protective sleeve sleeved over the exhaust pipe, and a protective gas assembly. An annular space is formed between the protective sleeve and the exhaust pipe, and an air inlet is provided in the protective sleeve. The protective gas assembly is connected to the air inlet and is used to deliver protective gas into the annular space. The protective gas is used to prevent exhaust gas containing the free radicals from corroding the exhaust pipe.

[0013] Optionally, a fixing ring is provided between the exhaust pipe and the protective sleeve, and downstream of the air inlet. The fixing ring is used to support the protective sleeve, and the fixing ring is provided with uniform flow holes spaced apart along its axial direction to allow the gas in the annular space to flow out uniformly.

[0014] Optionally, the protective gas assembly includes a gas source, an inlet pipe, and a flow regulating valve and an on / off valve disposed on the inlet pipe, wherein the inlet end of the inlet pipe is connected to the gas source, and the outlet end is connected to the inlet port; the gas source is used to provide the protective gas.

[0015] Optionally, the at least two intake pipes are also used to deliver inert gas to the flow equalization chamber as process gas.

[0016] As another technical solution, this embodiment of the invention also provides an annealing apparatus, including a heating furnace body and a process chamber disposed in the heating furnace body, wherein the process chamber adopts the semiconductor chamber provided in this embodiment of the invention.

[0017] Beneficial effects of the embodiments of the present invention: The semiconductor chamber provided in this invention utilizes a purging device to remove metal contaminants within the chamber. At least two inlet pipes in this purging device are connected to a uniform flow cavity in a uniform flow structure, supplying at least two different gases to the uniform flow cavity. These gases mix within the uniform flow cavity and then flow into the interior of the chamber. The two gases react to generate free radicals capable of binding with metal contaminants. For example, oxygen and hydrogen react to generate hydroxyl radicals, where the OH- ions combine with metal ions adhering to the inner wall of the chamber. The resulting hydroxide is then expelled from the chamber with the airflow, effectively removing metal contaminants from the chamber. Simultaneously, the uniform flow structure optimizes the airflow direction and ensures that the mixed gases flow evenly into the chamber, preventing variations in purging effectiveness due to uneven airflow distribution. This effectively removes metal contaminants from purging blind spots, significantly reducing metal contamination, particularly difficult-to-remove copper contaminants. The semiconductor chamber provided in this embodiment of the invention eliminates the need for disassembly and cleaning, reducing equipment maintenance time and operating costs, thereby increasing equipment uptime and production capacity. Furthermore, it reduces uncertainties and instabilities in subsequent processes, improving process reliability. Attached Figure Description

[0018] Figure 1 A cross-sectional view of a semiconductor cavity provided in an embodiment of the present invention; Figure 2A A radial cross-sectional view of a semiconductor cavity provided in an embodiment of the present invention; Figure 2B This is a top view of the flow equalizer used in an embodiment of the present invention; Figure 3A This is a cross-sectional view of the flow uniform plate used in an embodiment of the present invention; Figure 3B This is a connection diagram of the flow equalizer and the cavity used in an embodiment of the present invention; Figure 4 An airflow distribution diagram of a semiconductor cavity provided in an embodiment of the present invention; Figure 5 This is a graph showing the relevant parameters of the purging process used in the embodiments of the present invention; Figure 6 This is a diagram illustrating the purging effect of a semiconductor chamber provided in an embodiment of the present invention. Detailed Implementation

[0019] To enable those skilled in the art to better understand the technical solutions of the present invention, the semiconductor chamber and annealing apparatus provided in the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0020] Please see Figure 1The semiconductor chamber provided in this embodiment of the invention is applied, for example, to an annealing apparatus. The annealing apparatus includes a heating furnace body 1 and a process chamber disposed within the heating furnace body 1. The process chamber includes a quartz tube constituting a process space. The bottom of the quartz tube has an opening for a crystal boat 3 to enter and exit, and the top of the quartz tube is closed. The crystal boat 3 is used to carry multiple wafers, which are spaced apart vertically. The semiconductor chamber provided in this embodiment of the invention includes a cavity 2, which is the aforementioned quartz tube.

[0021] The semiconductor chamber provided in this embodiment of the invention further includes a purging device for removing metal contaminants, such as Cu, from the chamber 2. The purging device includes at least two inlet pipes and a flow equalization structure. The flow equalization structure is disposed within the chamber 2 and has a flow equalization cavity. Both inlet pipes are connected to the flow equalization cavity and are used to deliver at least two gases to the flow equalization cavity, respectively, so that the at least two gases mix in the flow equalization cavity and flow into the interior of the chamber 2. The at least two gases react to generate free radicals capable of binding with the metal contaminants.

[0022] Depending on the specific metal contaminants and process requirements, the number of inlet pipes and the type of gas transported by each inlet pipe will vary accordingly. For example, for Cu metal contamination, there can be two inlet pipes: a first inlet pipe 41 and a second inlet pipe 42. Both are connected to the uniform flow cavity of the uniform flow structure to supply oxygen and hydrogen to the cavity, respectively. Oxygen and hydrogen can react to generate hydroxyl radicals, and the OH- radicals can combine with metal ions attached to the inner wall of the cavity. The resulting hydroxides will be discharged from the cavity with the gas flow, effectively removing metal contaminants from the cavity. Moreover, for medium- and high-temperature annealing processes where the process gas is H2, no new contaminant source is introduced.

[0023] For example, regarding Cu metal contamination, the reaction process of oxygen and hydrogen with Cu metal is as follows: H₂ + O₂ = H₂ + +O 2- +OH - ; Cu 2+ +OH - =Cu(OH)2.

[0024] In this embodiment, both the first inlet pipe 41 and the second inlet pipe 42 can also be used to supply inert gases such as nitrogen to the flow equalization chamber, so as to be introduced into the flow equalization chamber as process gases during the annealing process. That is, the first inlet pipe 41 and the second inlet pipe 42 can either introduce oxygen and nitrogen into the flow equalization chamber respectively, or both can introduce inert gases into the flow equalization chamber. Of course, in practical applications, a separate pipe can also be provided for introducing inert gases into the flow equalization chamber or the chamber 2.

[0025] The uniform flow structure is designed to ensure that oxygen and hydrogen are mixed and flow evenly into cavity 2. This uniform flow structure optimizes the direction of airflow and ensures that the mixed and reacted oxygen and hydrogen flow evenly into cavity 2. This avoids differences in purging effect caused by uneven airflow distribution, effectively removing metal contamination from purging blind spots and significantly reducing metal contamination, especially difficult-to-remove copper contamination.

[0026] The flow uniform structure can have various structures; for example, in this embodiment, such as... Figure 2A and Figure 2B As shown, the flow equalization structure includes a flow equalization plate 43, which is, for example, a quartz plate, and divides the cavity 2 into a flow equalization space 21 and a process space 22, wherein the flow equalization space 21 serves as the aforementioned flow equalization cavity. Specifically, in this embodiment, the flow equalization plate 43 is used to position the flow equalization space 21 above the process space 22, such as... Figure 2A As shown, the outlet end 411 of the first air inlet pipe 41 and the outlet end 421 of the second air inlet pipe 42 vertically ascend from the bottom of the cavity 2, pass through the flow equalization plate 43, and extend into the flow equalization space 21. That is, the outlet ends 411 of the first air inlet pipe 41 and 421 of the second air inlet pipe 42 are both higher than the upper surface of the flow equalization plate 43, so that oxygen and hydrogen can be directly introduced into the flow equalization space 21. Of course, in practical applications, the layout of the flow equalization space and process space divided by the flow equalization plate will be different according to different chamber structures, and the way the first air inlet pipe and the second air inlet pipe introduce oxygen and hydrogen respectively will also be different. These can all be freely set according to specific circumstances.

[0027] Furthermore, the flow equalization plate 43 is provided with multiple air outlets 431 for connecting the flow equalization space 21 with the process space 22. For example... Figure 4 As shown, oxygen and hydrogen flow into the uniform flow space 21 from the outlet 411 of the first inlet pipe 41 and the outlet 421 of the second inlet pipe 42, respectively, and then mix with each other. The mixed gas then flows into the process space 22 through each outlet 431. Figure 4 As shown by the dashed arrow, the mixed gas flows vertically downward into the process space 22. This improves the uniformity of airflow distribution, avoids differences in purging effect caused by uneven airflow distribution, fully removes metal contamination in the purging blind area, and effectively reduces metal contamination, especially copper contamination that is difficult to remove.

[0028] like Figure 2B As shown, multiple air outlets 431 are distributed on multiple circles with different radii, centered on the radial cross-section of the flow equalizer 43. The multiple air outlets on each circle are evenly distributed relative to the center. This improves the uniformity of airflow distribution in the circumferential direction of the process space 22, thereby further enhancing the purging effect. For example, as... Figure 2B As shown, multiple air outlets 431 are distributed on three circumferences. Specifically, the radius of the flow equalizer 43 is R0; the radii of the three circumferences, from largest to smallest, are R1, R2 and R3.

[0029] The diameter and number of vent holes 431 can be calculated and optimized based on the total gas flow rate and the inner diameter of the inlet pipe. In some embodiments, the diameters of the vent holes 431 on different circumferences are different, and the smaller the diameter of the circumference, the smaller the diameter and / or number of vent holes 431 on that circumference. For example, as... Figure 2B As shown, the diameter of the vent 431a on the circumference of radius R1 is larger than the diameter of the vent 431b on the circumference of radius R2; the diameter of the vent 431b on the circumference of radius R2 is larger than the diameter of the vent 431c on the circumference of radius R3. The number of vents 431a on the circumference of radius R1 is equal to the number of vents 431b on the circumference of radius R2; the number of vents 431b on the circumference of radius R2 is greater than the number of vents 431c on the circumference of radius R3.

[0030] In some embodiments, in at least one set of two adjacent circumferences, the air vents 431 on one circumference are staggered with the air vents 431 on the other circumference. For example, as Figure 2B As shown, the air outlets 431a on a circle with radius R1 are staggered with the air outlets 431b on a circle with radius R2; and the air outlets 431b on a circle with radius R2 are staggered with the air outlets 431c on a circle with radius R3. In other words, for any given air outlet 431, there is an angle between the line connecting it to the center of the circle and the line connecting the air outlet 431 on the adjacent circle to the center of the circle.

[0031] With an inner diameter of 425 mm for cavity 2, the specific radii are, for example, R0 = 202 mm, R1 = 170 mm, R2 = 130 mm, and R3 = 90 mm; and the number of vents 431a on the circumference with radius R1 is 24. Figure 2B Only 12 vents 431a are schematically shown, each with a diameter of 4 mm; the number of vents 431b on a circle with radius R2 is 24. Figure 2B Only 12 vents 431b are schematically shown, each with a diameter of 3 mm; the number of vents 431c on a circle with radius R3 is 16. Figure 2BOnly eight vents 431c are schematically shown, each with a diameter of 2 mm. Furthermore, the angle between the center line connecting any vent 431a on a circle of radius R1 to the center of the circle, and the center line connecting the vent 431b adjacent to vent 431a on a circle of radius R2 to the center of the circle, is 7.5°; the angle between the center line connecting the vent 431b adjacent to vent 431a on a circle of radius R2 to the center of the circle, and the center line connecting the vent 431c adjacent to vent 431c on a circle of radius R3 to the center of the circle, is also 7.5°. This ensures that in at least one set of two adjacent circles, the vents 431 on one circle are staggered with the vents 431 on the other circle.

[0032] In some embodiments, such as Figure 3A and Figure 3B As shown, a plurality of first connecting portions 432 are provided at intervals along the circumference of the outer peripheral wall of the flow equalizer 43; and correspondingly, a plurality of second connecting portions 23 are provided at intervals on the side wall of the cavity 2; a positioning groove 231 is provided on the second connecting portion 23, and the first connecting portions 432 are located in the positioning groove 231 to define the position of the flow equalizer 43 in the cavity 2. Of course, in practical applications, the positioning groove can also be provided on the first connecting portion, and the second connecting portion can be located in the positioning groove. During installation, the angle of the flow equalizer 43 in the circumferential direction can be adjusted so that the first connecting parts 432 and the second connecting parts 23 do not overlap in the vertical direction. Then, the flow equalizer 43 is raised in the vertical direction until the height of the first connecting parts 432 is higher than that of the second connecting parts 23. After that, the flow equalizer 43 is rotated so that the first connecting parts 432 are positioned above the positioning grooves 231 in a one-to-one correspondence. Finally, the flow equalizer 43 is lowered until the first connecting parts 432 are positioned in the positioning grooves 231 in a one-to-one correspondence, thus defining the position of the flow equalizer 43 in the cavity 2.

[0033] like Figure 1As shown, in this embodiment, the semiconductor chamber further includes an exhaust structure for discharging exhaust gas from the chamber 2. This exhaust structure includes an exhaust port at the bottom of the chamber 2, an exhaust pipe 51 connected to the exhaust port, a protective sleeve 52 fitted over the exhaust pipe 51, and a protective gas assembly 55. An annular space 53 is formed between the protective sleeve 52 and the exhaust pipe 51, and an air inlet is provided in the protective sleeve 52. The protective gas assembly 55 is connected to the air inlet and is used to supply a protective gas into the annular space 53. This protective gas is, for example, nitrogen, or any other inert gas. During the process of removing metal contaminants from the chamber 2 using the aforementioned purging device, by activating the protective gas assembly 55 and supplying protective gas into the annular space 53, the highly corrosive exhaust gas containing free radicals from the chamber 2 can be prevented from flowing into the annular space 53, while also accelerating the gas discharge from the chamber 2.

[0034] In addition, the exhaust pipe 51 and the protective sleeve 52 are both connected to the exhaust gas treatment system (not shown in the figure), and the protective gas in the annular space 53 will flow to the exhaust gas treatment system and will not affect the purging process.

[0035] In this embodiment, a fixing ring 54 is arranged around the exhaust pipe 51 and the protective sleeve 52, downstream of the air inlet of the protective sleeve 52. This fixing ring 54 supports the protective sleeve 52, securing the relatively long sleeve and preventing damage due to uneven stress caused by frequent pressure changes. Furthermore, the fixing ring 54 has flow-equalizing holes spaced axially to ensure uniform gas flow in the annular space 53, thereby improving the uniformity of protective gas distribution in the circumferential direction of the exhaust pipe 51 and enhancing protection consistency.

[0036] Specifically, the aforementioned protective gas assembly 55 includes a gas source (not shown in the figure), an inlet pipe 551, and a flow regulating valve 552 and an on / off valve 553 disposed on the inlet pipe 551. The inlet end of the inlet pipe 551 is connected to the gas source, and the outlet end is connected to the inlet of the protective sleeve 52. The gas source is used to provide protective gas. The flow regulating valve 552 is used to regulate the flow rate of the protective gas; the on / off valve 553 is used to control the opening and closing of the inlet pipe 551.

[0037] In practical applications, the aforementioned purging device can be used to perform a purging process before the machine inspection test to remove metal contaminants from cavity 2, thereby facilitating a smooth start to the test, avoiding repeated tests, and improving the efficiency of the machine inspection. The purging process can also be performed periodically, for example, at least once after processing a certain number of wafers or after a certain process time.

[0038] like Figure 5The figure shows graphs of relevant parameters such as chamber temperature, chamber pressure, nitrogen, hydrogen, and oxygen during the purging process using a purging device. Figure 1 Taking the semiconductor chamber shown as an example, the purging process includes: Step 101 is the boat entry stage. At this time, the temperature inside the cavity 2 is 650℃. The empty boat enters the cavity 2 through the lower opening of the cavity 2. After completion, the lower opening of the cavity 2 is closed. During this process, nitrogen gas is introduced into the cavity 2 through the first air intake pipe 41 and the second air intake pipe 42. Step 102: After the temperature stabilizes, heat the chamber 2 to raise the chamber temperature to the purging temperature (e.g., 900°C), and at the same time evacuate the inside of the chamber 2 to make the chamber pressure reach the preset minimum pressure. Step 103: Perform chamber leak rate detection, and stabilize the chamber pressure at the purge pressure (e.g., 0.38 torr) after completion; Step 104: Activate the protective gas assembly 55 to introduce protective gas into the annular space 53; Step 105: After the temperature and pressure of the chamber stabilize, oxygen and hydrogen are introduced into the chamber 2 through the first air inlet pipe 41 and the second air inlet pipe 42 to start the purging stage. In step 105, firstly, oxygen is introduced into the cavity 2 through the first intake pipe 41 at time t1. After the oxygen flow rate stabilizes and the cavity is fully filled, hydrogen is introduced into the cavity 2 through the second intake pipe 42 at time t2. After the oxygen and hydrogen are fully mixed in the uniform flow space 21, they flow into the process space 22 through the various outlet holes 431 in the uniform flow plate 43. Under high temperature and low pressure conditions, oxygen and hydrogen react to generate hydroxyl radicals. The hydroxyl radicals combine with metal ions on the inner surface of the cavity 2 and are discharged from the cavity 2 through the exhaust structure with the airflow. Because a protective gas is introduced into the annular space 53, corrosion of the exhaust pipe by hydroxyl radicals can be avoided.

[0039] In practical applications, the above-mentioned high temperature and high pressure conditions can be met: the chamber temperature is 900℃; the chamber pressure is less than 0.5℃; and the hydrogen flow rate is greater than 10% of the total flow rate of hydrogen and oxygen.

[0040] Step 106: After the purging process is completed, firstly, at time t3, stop the introduction of hydrogen into cavity 2 and start introducing nitrogen into cavity 2 through the second air inlet pipe 42 to remove residual gas in cavity 2, and maintain the introduction of oxygen to fully react with and consume the residual hydrogen in cavity 2; then, at time t4, stop the introduction of oxygen into cavity 2 and introduce nitrogen into cavity 2 through the first air inlet pipe 41 to remove residual gas in cavity 2.

[0041] Step 107: Evacuate chamber 2 to the preset minimum pressure to remove residual oxygen, hydrogen and surface products; Step 108: Boat removal stage. Restore the chamber pressure to normal pressure, while lowering the chamber temperature until it reaches the standby temperature (e.g., 650°C). Then, remove the empty boat from chamber 2.

[0042] Figure 6 The trend of copper contamination results is shown after repeated tests of the above-described purging process and normal annealing process to verify the purging effect. The vertical axis represents the number of copper atoms per square meter in the chamber; the horizontal axis represents the purging process performed in this test. Black bars represent the number of copper atoms per square meter on the top surface of the wafer; white bars represent the number of copper atoms per square meter on the bottom surface of the wafer. The results show that copper metal contamination shows a decreasing trend, indicating that the semiconductor chamber provided in this embodiment can effectively remove metal contamination within the chamber.

[0043] In summary, the semiconductor chamber provided by this invention removes metal contaminants from the chamber using a purging device. At least two inlet pipes in this purging device are connected to a uniform flow cavity in a uniform flow structure, supplying at least two gases to the uniform flow cavity. These gases mix within the uniform flow cavity and then flow into the interior of the chamber. The at least two gases react to generate free radicals that can bind to metal contaminants. For example, oxygen and hydrogen can react to generate hydroxyl radicals, where the OH- radicals can combine with metal ions attached to the inner wall of the chamber. The resulting hydroxide is then discharged from the chamber with the airflow, effectively removing metal contaminants from the chamber. Simultaneously, the uniform flow structure optimizes the airflow direction and ensures that the mixed gases flow evenly into the chamber, avoiding differences in purging effects caused by uneven airflow distribution. This effectively removes metal contaminants from purging blind spots, significantly reducing metal contamination, especially difficult-to-remove copper contaminants. The semiconductor chamber provided in this embodiment of the invention eliminates the need for disassembly and cleaning, reducing equipment maintenance time and operating costs, thereby increasing equipment uptime and production capacity. Furthermore, it reduces uncertainties and instabilities in subsequent processes, improving process reliability.

[0044] As another technical solution, embodiments of the present invention also provide an annealing apparatus, for... Figure 1 Taking the annealing apparatus shown as an example, it includes a heating furnace body 1 and a process chamber disposed in the heating furnace body 1. The process chamber adopts the semiconductor chamber provided in the embodiments of the present invention.

[0045] The annealing apparatus provided in this embodiment of the invention, by employing the semiconductor chamber provided in this embodiment of the invention, can not only effectively remove metal contamination in the chamber, but also eliminate the need to disassemble and clean the chamber, thereby reducing equipment maintenance time and equipment operating costs, thus increasing equipment uptime and improving production capacity. In addition, it also reduces uncertainties and unstable factors in subsequent processes, thereby improving process reliability.

[0046] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor chamber, comprising a cavity, characterized in that, It also includes a purging device for removing metal contaminants from the cavity. The purging device includes at least two air inlet pipes and a flow equalization structure. The cavity is a tubular cavity with a closed end and an open end. The flow equalization structure is disposed in the cavity and adjacent to the closed end, and the flow equalization structure and the closed end form a flow equalization cavity. The at least two air inlet pipes extend from the open end and communicate with the flow equalization cavity. The air outlets of the at least two air inlet pipes are located in the flow equalization cavity for supplying at least two gases to the flow equalization cavity. The air outlets of the at least two air inlet pipes face the inner wall of the closed end so that the at least two gases are mixed in the flow equalization cavity and flow into the interior of the cavity. The at least two gases are used to react and generate free radicals that can bind to the metal contaminants.

2. The semiconductor chamber according to claim 1, characterized in that, The flow equalization structure includes a flow equalization plate, which divides the cavity into a flow equalization space and a process space. The flow equalization space is used as the flow equalization cavity. Furthermore, the flow equalization plate is provided with a plurality of air outlets for connecting the flow equalization space and the process space.

3. The semiconductor chamber according to claim 2, characterized in that, The flow equalization plate is used to position the flow equalization space above the process space; the outlet ends of the at least two air inlet pipes pass vertically upward from the bottom of the cavity through the flow equalization plate and extend into the flow equalization space.

4. The semiconductor chamber according to claim 2 or 3, characterized in that, The plurality of air outlets are distributed on a plurality of circumferences with different radii centered at the center of the radial section of the flow equalizer plate. The plurality of air outlets on each circumference are evenly distributed relative to the center of the circle. The diameters of the air outlets on different circumferences are different, and the smaller the diameter of the circumference, the smaller the diameter and / or the number of air outlets on the circumference. And / or, in at least one set of two adjacent circumferences, the air outlets on one circumference are staggered with the air outlets on the other circumference.

5. The semiconductor chamber according to claim 2 or 3, characterized in that, On the outer peripheral wall of the flow equalizer, a plurality of first connecting portions are provided at intervals along its circumference; and correspondingly, a plurality of second connecting portions are provided at intervals on the side wall of the cavity; a positioning groove is provided on the first connecting portion, and the second connecting portion is located in the positioning groove; or, a positioning groove is provided on the second connecting portion, and the first connecting portion is located in the positioning groove, so as to define the position of the flow equalizer in the cavity.

6. The semiconductor chamber according to claim 1, characterized in that, The semiconductor chamber further includes an exhaust structure for discharging exhaust gas from the chamber. The exhaust structure includes an exhaust port located at the bottom of the chamber, an exhaust pipe connected to the exhaust port, a protective sleeve fitted over the exhaust pipe, and a protective gas assembly. An annular space is formed between the protective sleeve and the exhaust pipe, and an air inlet is provided in the protective sleeve. The protective gas assembly is connected to the air inlet and is used to deliver protective gas into the annular space. The protective gas is used to prevent exhaust gas containing the free radicals from corroding the exhaust pipe.

7. The semiconductor chamber according to claim 6, characterized in that, A fixing ring is arranged between the exhaust pipe and the protective sleeve, and downstream of the air inlet. The fixing ring is used to support the protective sleeve, and the fixing ring is provided with uniform flow holes spaced along its axial direction to allow the gas in the annular space to flow out uniformly.

8. The semiconductor chamber according to claim 6, characterized in that, The protective gas assembly includes a gas source, an inlet pipe, and a flow regulating valve and an on / off valve installed on the inlet pipe. The inlet end of the inlet pipe is connected to the gas source, and the outlet end is connected to the inlet port. The gas source is used to provide the protective gas.

9. The semiconductor chamber according to claim 1, characterized in that, The at least two intake pipes are also used to supply inert gas to the uniform flow cavity as process gas.

10. An annealing apparatus, comprising a heating furnace body and a process chamber disposed within the heating furnace body, characterized in that, The process chamber is a semiconductor chamber as described in any one of claims 1-9.

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