Electrical field sensor device based on magnetic field deflection and line voltage inversion method
Patent Information
- Application Number
- CN202611317217.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-28
- Publication Date
- 2026-09-25
AI Technical Summary
离子流会轰击电场传感器的感应电极，产生额外的电场，导致传感器输出漂移甚至失效，严重影响电场测量的准确性
[0018]本申请实施例至少包括以下有益效果：本申请提供一种基于磁场偏转的电场传感器装置、线路电压反演方法、电子设备、存储介质及程序产品，该方案在电场传感器感应待测电场前，通过设置磁场发生器产生磁场，对待测电场中的带电离子流施加洛伦兹力，利用洛伦兹力直接偏转离子流，从物理层面去除离子流，减少离子流对电场传感器的电场测量的影响，提高电场传感器的电场测量准确性。
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Figure CN122815016A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of electric field monitoring technology, and in particular to an electric field sensor device based on magnetic field deflection and a method for line voltage inversion. Background Technology
[0002] The measurement of voltage in high-voltage direct current (HVDC) transmission lines is crucial for the safety and reliability of power systems. Traditional voltage measurement methods mainly use electromagnetic voltage transformers and capacitive voltage transformers. However, electromagnetic voltage transformers are large and expensive due to high voltage and insulation requirements, and their internal cores are prone to saturation overvoltage. Capacitive voltage transformers, on the other hand, are susceptible to ferroresonance, which can easily lead to internal overvoltage.
[0003] In recent years, non-invasive voltage measurement methods based on electric field inversion have gradually attracted attention. This method uses electric field sensors to collect spatial electric field information, and combines the collected electric field information with electromagnetic knowledge to invert the voltage of high-voltage lines. It has advantages such as not contacting the device under test, not changing the original test system topology, small sensor size, and easy integration.
[0004] However, in the environment of ultra-high voltage direct current (UHVDC) transmission, when the electric field strength on the conductor surface exceeds the air breakdown strength, corona discharge occurs in the transmission line, generating a large amount of space charge. Driven by the electric field, these space charges migrate directionally, forming an ion flow. The electric field generated by the space charges superimposes with the nominal electric field generated by the charges on the transmission line to form a composite electric field. This ion flow bombards the sensing electrodes of the electric field sensor, generating an additional electric field, causing sensor output drift or even failure, severely affecting the accuracy of electric field measurements.
[0005] In summary, the technical problems existing in the relevant technologies need to be improved. Summary of the Invention
[0006] The main objective of this application is to propose an electric field sensor device and a line voltage inversion method based on magnetic field deflection, which can improve the accuracy of electric field measurement.
[0007] To achieve the above objectives, one aspect of this application proposes an electric field sensor device based on magnetic field deflection. The electric field sensor device is disposed below the transmission line under test. The electric field sensor device includes an electric field sensor, a magnetic field generator, and a shielding housing. An opening is provided on the upper surface of the shielding housing. The magnetic field generator and the electric field sensor are both located inside the shielding housing. The magnetic field generator is symmetrically arranged at the lower edge of the opening. The magnetic field generator is connected to the shielding housing. The electric field sensor is located below the magnetic field generator. The magnetic field generator is used to generate a magnetic field to deflect the ion flow in the electric field to be measured entering from the opening; The electric field sensor is used to measure the electric field of the electric field to be measured after the ion flow has been removed, and to obtain electric field data.
[0008] In some embodiments, the magnetic field generator is also used to transfer a deflected ion stream to the shielding housing.
[0009] In some embodiments, the electric field sensor device further includes a sensitive electrode disposed below the magnetic field generator, the sensitive electrode being isolated from the magnetic field generator by an insulating medium, the sensitive electrode being located directly below the opening, and the sensitive electrode being connected to the electric field sensor via a coaxial shielded wire; The sensitive electrode is used to sense the electric field to be measured after the ion flow has been removed, generate a corresponding charge, and transmit the charge to the electric field sensor.
[0010] In some embodiments, the electric field sensor is specifically used for: The electric field data is obtained by measuring the electric field based on the amount of charge.
[0011] In some embodiments, the electric field sensor includes an inner cover plate, a current-to-voltage conversion circuit, a digital processing module, and multiple sets of sensing electrode groups. The inner cover plate is connected to the sensitive electrode via a coaxial shielded wire. The sensing electrode groups are disposed below the inner cover plate. The sensing electrode groups are connected to the current-to-voltage conversion circuit, and the current-to-voltage conversion circuit is connected to the digital processing module. The inner cover plate is used to generate a corresponding internal electric field according to the amount of charge. The sensing electrode group is used to sense the internal electric field to obtain an induced current; The current-to-voltage conversion circuit is used to convert the induced current to obtain the induced voltage; The digital processing module is used to perform digital phase-locked amplification on the induced voltage to obtain the electric field data.
[0012] In some embodiments, the sensing electrode group includes a positive sensing electrode, a negative sensing electrode, and a shielding electrode, wherein the shielding electrode is connected to ground, and the positive sensing electrode and the negative sensing electrode are respectively connected to the current-voltage conversion circuit; The shielding electrode is used to reciprocate in response to the internal electric field; The positive and negative induction electrodes are used to generate induced current based on the reciprocating position of the shielding electrode.
[0013] In some embodiments, the shielding housing is provided with through holes on both sides, which serve as through channels for the wires to achieve equipotential connection between the shielding housing and the wires.
[0014] To achieve the above objectives, another aspect of this application proposes a line voltage inversion method, which includes the following steps: Acquire electric field data measured by the electric field sensor device described in the above embodiments; Based on a preset electric field-voltage inversion model, the electric field data is inverted and calculated to obtain the line voltage.
[0015] To achieve the above objectives, another aspect of this application provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the method described above.
[0016] To achieve the above objectives, another aspect of the embodiments of this application proposes a computer-readable storage medium storing a computer program that, when executed by a processor, implements the methods described above.
[0017] To achieve the above objectives, another aspect of the embodiments of this application proposes a computer program product, including a computer program that, when executed by a processor, implements the aforementioned method.
[0018] The embodiments of this application include at least the following beneficial effects: This application provides an electric field sensor device, a line voltage inversion method, an electronic device, a storage medium, and a program product based on magnetic field deflection. Before the electric field sensor senses the electric field to be measured, the solution generates a magnetic field by setting a magnetic field generator to apply a Lorentz force to the charged ion flow in the electric field to be measured. The Lorentz force is used to directly deflect the ion flow, removing the ion flow from a physical level, reducing the influence of the ion flow on the electric field measurement of the electric field sensor, and improving the accuracy of the electric field measurement of the electric field sensor. Attached Figure Description
[0019] Figure 1 This is a schematic diagram of the electric field sensor device provided in the embodiments of this application; Figure 2 This is a schematic diagram showing the directions of electric and magnetic field lines provided in an embodiment of this application; Figure 3 This is a schematic diagram of ion flow deflection provided in an embodiment of this application; Figure 4 This is a schematic diagram of the structure of the electric field sensor provided in the embodiments of this application; Figure 5 This is a schematic diagram of the operation of the electric field sensor provided in the embodiments of this application; Figure 6 This is a schematic diagram of the hardware structure of the electronic device provided in the embodiments of this application. Detailed Implementation
[0020] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit it. In the following description, when referring to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with those of this application; they are merely examples of apparatuses and methods consistent with some aspects of the embodiments of this application as detailed in the appended claims.
[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.
[0022] The measurement of voltage in high-voltage direct current (HVDC) transmission lines is crucial for the safety and reliability of power systems. Traditional voltage measurement methods mainly use electromagnetic voltage transformers and capacitive voltage transformers. However, electromagnetic voltage transformers are large and expensive due to high voltage and insulation requirements, and their internal cores are prone to saturation overvoltage. Capacitive voltage transformers, on the other hand, are susceptible to ferroresonance, which can easily lead to internal overvoltage.
[0023] In recent years, non-invasive voltage measurement methods based on electric field inversion have gradually attracted attention. This method uses electric field sensors to collect spatial electric field information, and combines the collected electric field information with electromagnetic knowledge to invert the voltage of high-voltage lines. It has advantages such as not contacting the device under test, not changing the original test system topology, small sensor size, and easy integration.
[0024] However, in the environment of ultra-high voltage direct current (UHVDC) transmission, when the electric field strength on the conductor surface exceeds the air breakdown strength, corona discharge occurs in the transmission line, generating a large amount of space charge. Driven by the electric field, these space charges migrate directionally, forming an ion flow. The electric field generated by the space charges superimposes with the nominal electric field generated by the charges on the transmission line to form a composite electric field. This ion flow bombards the sensing electrodes of the electric field sensor, generating an additional electric field, causing sensor output drift or even failure, severely affecting the accuracy of electric field measurements.
[0025] Several technical solutions exist to address the problem of ion flow interference: (1) Metal shielding method: The shielding metal cavity is used to prevent the ion flow from accumulating on the sensor, but the relationship between the electric field inside and outside the cavity needs to be calibrated, and the shielding cavity will also cause distortion to the electric field being measured.
[0026] (2) Differential cover plate method: A reference cover plate and a differential cover plate with different materials or different surface roughness are set above two electric field sensors, and the nominal electric field is extracted by differential method. However, this method increases the complexity of the system configuration and requires multiple calibrations for different ion flow fields in advance, and the operation steps are complicated.
[0027] (3) Double frequency method: By making the output voltage of the sensing electrode have a double frequency relationship with the driving voltage, interference at the same frequency is avoided, and differential measurement is used to eliminate the influence of the ion flow field. However, this method mainly suppresses interference at the signal processing level and fails to prevent the ion flow from reaching the sensitive electrode at the physical level.
[0028] In view of this, embodiments of this application provide an electric field sensor device and a line voltage inversion method based on magnetic field deflection. This scheme uses the Lorentz force to directly deflect the ion flow, suppressing the interference of the ion flow from a physical level, which is more thorough than interference suppression at the signal processing level.
[0029] The line voltage inversion method provided in this application relates to the field of electric field measurement technology. The line voltage inversion method provided in this application can be applied to a terminal, a server, or can be software running on a terminal or server.
[0030] This application provides an electric field sensor device based on magnetic field deflection. Please refer to... Figure 1 An electric field sensor device is installed below the transmission line to be tested. The electric field sensor device includes an electric field sensor 1, a magnetic field generator 3, and a shielding housing 4. An opening is provided on the upper surface of the shielding housing 4. The magnetic field generator 3 and the electric field sensor 1 are both located inside the shielding housing 4. The magnetic field generator 3 is symmetrically arranged at the lower edge of the opening. The magnetic field generator 3 is connected to the shielding housing 4. The electric field sensor 1 is located below the magnetic field generator. The magnetic field generator 3 is used to generate a magnetic field to deflect the ion flow in the electric field to be measured that enters from the opening; Electric field sensor 1 is used to measure the electric field of the target electric field after the ion flow has been removed, and obtain electric field data.
[0031] Specifically, please refer to Figure 2 and Figure 3When charged particles (ion streams) move in a magnetic field, they are subjected to the Lorentz force: F = qv × B. Here, q is the ion charge, v is the ion velocity, and B is the magnetic flux density. The direction of the Lorentz force is determined by the left-hand rule: extend your left hand, allowing the magnetic field lines to pass perpendicularly through your palm. Point your four fingers in the direction of positive charge movement and vice versa for negative charges. The direction your thumb points is the direction of the Lorentz force (the direction of ion deflection). Under the influence of the Lorentz force, the trajectory of the ion stream is deflected, changing from its original incident direction towards the sensitive electrode to a deviated direction. The propagation of the electric field is unaffected by the magnetic field, allowing the electric field sensor to measure the electric field under test normally.
[0032] In some embodiments, the opening is a circular hole, a square hole, or a rectangular groove.
[0033] In some embodiments, the shielding housing 4 is made of a conductive metal material, preferably aluminum or copper, and also serves as an electric field shield.
[0034] In some embodiments, the electric field sensor 1 is a field-milled electric field sensor, a MEMS electric field sensor, or a resonant electric field sensor.
[0035] In some embodiments, the magnetic field generator is also used to deliver a deflected ion stream to the shielding housing.
[0036] Specifically, the magnetic field generator 3 is a permanent magnet or an electromagnetic coil, such as a neodymium iron boron permanent magnet. There are two or more pairs of permanent magnets, symmetrically arranged around the opening. Using permanent magnets eliminates the need for additional power supply and control circuitry, resulting in a simple structure and high long-term reliability. The magnetic field generator 3 is equipotentially connected to the shielding housing 4, allowing any charge that may accumulate on the magnet surface to be promptly dissipated to the surface of the shielding housing 4.
[0037] Please refer to Figure 3 The magnetic field generator 3 generates a magnetic field B. The direction of the magnetic field lines 8 is basically perpendicular to the incident direction of the ion flow 7 entering the opening. This causes the ion flow entering the opening to be deflected by the Lorentz force in the magnetic field, thus deviating from the sensitive electrode 6.
[0038] In some embodiments, please refer to Figure 1 The electric field sensor device also includes a sensitive electrode 6, which is located below the magnetic field generator 3. The sensitive electrode 6 is isolated from the magnetic field generator 3 by an insulating medium. The sensitive electrode 6 is located directly below the opening. The sensitive electrode 6 is connected to the electric field sensor 1 by a coaxial shielded wire 2. The sensitive electrode is used to sense the electric field to be measured after the ion flow has been removed, generate a corresponding amount of charge, and transmit the amount of charge to the electric field sensor.
[0039] Specifically, please refer to Figure 2 and Figure 3The opening of the shielding shell 4 corresponds to the sensitive electrode 6, allowing the measured electric field E to reach the sensitive electrode 6 through the opening. Due to the shielding effect of the shell, the internal electric field of the shielding shell 4 is almost zero, protecting the electric field sensor 1 and its built-in circuit from the ion flow 7 and the strong electric field E. The sensitive electrode 6 primarily senses the electric field entering the shell opening from outside the shielding shell 4.
[0040] The magnetic field generator 3 and the sensitive electrode 6 are electrically isolated by the insulating medium 5. When the electric field E reaches the surface of the sensitive electrode 6, the surface of the sensitive electrode 6 is induced with a charge that is proportional to the electric field E. The charge that is opposite to and equal to the charge induced by the sensitive electrode 6 is transferred to the inside of the electric field sensor 1, and a voltage signal related to the external electric field E is output through the charge amplification circuit.
[0041] In some embodiments, the electric field sensor is specifically used for: Electric field data is obtained by measuring the electric field based on the amount of charge.
[0042] In some embodiments, the electric field sensor includes an inner cover plate 11, a current-to-voltage conversion circuit, a digital processing module, and multiple sets of sensing electrode groups. The inner cover plate is connected to the sensitive electrode through a coaxial shielded wire. The sensing electrode groups are disposed below the inner cover plate and are connected to the current-to-voltage conversion circuit. The current-to-voltage conversion circuit is connected to the digital processing module. The inner cover plate 11 is used to generate a corresponding internal electric field according to the amount of charge; The induction electrode assembly is used to sense the internal electric field and obtain an induced current; A current-to-voltage conversion circuit is used to convert induced current into induced voltage; The digital processing module is used to perform digital phase-locked amplification of the induced voltage to obtain electric field data.
[0043] Specifically, please refer to Figure 4 and Figure 5 The sensitive electrode 6 is at a floating potential. When its upper surface is induced with a negative charge under the action of an external electric field E, an equal amount of negative charge is induced on the upper surface of the inner cover plate 11, which is connected to the sensitive electrode 6 through the coaxial shielding wire 2, and an equal amount of positive charge is induced on the lower surface of the inner cover plate 11. This allows the external electric field to be guided to the positive and negative sensing electrodes, thereby enabling the measurement of the external electric field.
[0044] A trans-impedance amplifier (TIA), i.e., a current-to-voltage conversion circuit, can convert the induced current of the sensing electrode into an induced voltage. Since the electric field sensitive chip (including multiple sets of sensing electrodes) directly outputs a weak AC signal, it is not easily detected directly. Therefore, the signal must first be converted and amplified by the pre-conditioning circuit of the electric field sensitive chip. Then, a digital phase-locked loop amplification method using relevant detection principles is used to extract the electric field signal, and differential detection is used to eliminate common-mode noise interference. The digital processing module can be a CPU, FPGA, etc.
[0045] In some embodiments, the housing 12 of the electric field sensor is a grounded shielding shell, which is connected to the grounding layer of the coaxial shielding wire.
[0046] In some embodiments, the sensing electrode group includes a positive sensing electrode, a negative sensing electrode, and a shielding electrode, wherein the shielding electrode is connected to ground, and the positive sensing electrode and the negative sensing electrode are respectively connected to a current-to-voltage conversion circuit. The shielded electrodes are used to reciprocate in response to the internal electric field; The positive and negative induction electrodes are used to generate induced current based on the reciprocating position of the shielding electrode.
[0047] Specifically, when the electric field sensing chip is placed in an internal electric field and the shielding electrode reciprocates with a period of ω along with the excitation comb, the charge on the surface of the sensing electrode will change periodically. According to Gaussian induction theorem, the output induced current can be expressed as: ; ; in, and These are the induced currents generated by the positive and negative induction electrodes, respectively. and These represent the amount of charge carried by the positive and negative induction electrodes, respectively. The capacitance is a function of the displacement of the movable shielding electrode. For charge The displacement sensitivity constant is determined by the overlapping area of the comb electrodes, the electrode spacing, and the dielectric constant. To shield the electrode vibration displacement, Let E be the initial charge and E be the electric field strength. The motion cycle of the shielding electrode, and This indicates the initial phase of the positive and negative induction electrodes.
[0048] In some embodiments, through holes are provided on both sides of the shielding housing, which serve as through channels for the wires to achieve equipotential connection between the shielding housing and the wires.
[0049] Specifically, the shielding housing 4 has through holes on its left and right sides with the same diameter as the high-voltage conductor 9, through which the high-voltage conductor 9 passes. The shielding housing 4 and the high-voltage conductor 9 are connected at the same potential, and the high voltage is 800kV DC ultra-high voltage, which can conduct away the charge on the shielding housing 4 and reduce charge accumulation.
[0050] The line voltage inversion method provided in this embodiment may include, but is not limited to, steps S101 to S102.
[0051] Step S101: Obtain the electric field data measured by the electric field sensor device of the above embodiment; Step S102: Based on the preset electric field-voltage inversion model, the electric field data is inverted and calculated to obtain the line voltage.
[0052] In the embodiments of this application, steps S101 to S102 indicate that the electric field-voltage inversion model can be constructed based on the simulated charge method, the electric field integration method, or other electric field-voltage inversion algorithms.
[0053] This application also provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the above-described method. This electronic device can include any smart terminal such as a tablet computer or an in-vehicle computer.
[0054] It is understood that the content of the above method embodiments is applicable to this device embodiment. The specific functions implemented by this device embodiment are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.
[0055] Please see Figure 6 , Figure 6 The hardware structure of an electronic device according to another embodiment is illustrated. The electronic device includes: The processor 901 can be implemented using a general-purpose CPU (Central Processing Unit), microprocessor, application-specific integrated circuit (ASIC), or one or more integrated circuits, and is used to execute relevant programs to implement the technical solutions provided in the embodiments of this application. The memory 902 can be implemented as a read-only memory (ROM), static storage device, dynamic storage device, or random access memory (RAM). The memory 902 can store the operating system and other application programs. When the technical solutions provided in the embodiments of this specification are implemented through software or firmware, the relevant program code is stored in the memory 902 and is called and executed by the processor 901 using the methods described in the embodiments of this application. The input / output interface 903 is used to implement information input and output; The communication interface 904 is used to enable communication and interaction between this device and other devices. Communication can be achieved through wired means (such as USB, Ethernet cable, etc.) or wireless means (such as mobile network, WIFI, Bluetooth, etc.). Bus 905 transmits information between various components of the device (e.g., processor 901, memory 902, input / output interface 903, and communication interface 904); The processor 901, memory 902, input / output interface 903, and communication interface 904 are connected to each other within the device via bus 905.
[0056] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described method.
[0057] It is understood that the content of the above method embodiments is applicable to this storage medium embodiment. The specific functions implemented in this storage medium embodiment are the same as those in the above method embodiments, and the beneficial effects achieved are also the same as those achieved in the above method embodiments.
[0058] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described method.
[0059] It is understood that the content of the above method embodiments is applicable to the embodiments of this program product. The specific functions implemented by the embodiments of this program product are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.
[0060] Memory, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs and non-transitory computer-executable programs. Furthermore, memory may include high-speed random access memory, and may also include non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, memory may optionally include memory remotely located relative to the processor, and these remote memories can be connected to the processor via a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.
[0061] The electric field sensor device, line voltage inversion method, electronic device, storage medium, and program product based on magnetic field deflection provided in this application have at least the following beneficial effects: 1. Physical level interference elimination: The ion flow is directly deflected by the Lorentz force, which prevents the ion flow from bombarding the sensitive electrode at the physical level. This is more thorough than interference suppression at the signal processing level.
[0062] 2. Does not change the measured electric field: The magnetic field does not affect the propagation of the electric field, so the magnetic field deflection device in this embodiment will not cause distortion to the measured electric field.
[0063] 3. Simple structure and high reliability: When using a permanent magnet solution, no additional power supply and control circuit are required, resulting in a simple structure and high long-term reliability.
[0064] 4. Wide applicability: The solution in this embodiment is applicable to various types of electric field sensors, such as field milling, MEMS, and resonant sensors, and has wide applicability.
[0065] The embodiments described in this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems.
[0066] Those skilled in the art will understand that the technical solutions shown in the figures do not constitute a limitation on the embodiments of this application, and may include more or fewer steps than shown, or combine certain steps, or different steps.
[0067] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.
[0068] Those skilled in the art will understand that all or some of the steps in the methods disclosed above, as well as the functional modules / units in the systems and devices, can be implemented as software, firmware, hardware, or suitable combinations thereof.
[0069] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.
[0070] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.
[0071] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of the units described above is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.
[0072] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0073] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.
[0074] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes multiple instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned storage medium includes various media capable of storing programs, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0075] The preferred embodiments of the present application have been described above with reference to the accompanying drawings, but this does not limit the scope of the claims of the present application. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and substance of the embodiments of the present application shall be within the scope of the claims of the present application.
Claims
1. An electric field sensor device based on magnetic field deflection, characterized in that, The electric field sensor device is disposed below the transmission line under test. The electric field sensor device includes an electric field sensor, a magnetic field generator, and a shielding housing. An opening is provided on the upper surface of the shielding housing. The magnetic field generator and the electric field sensor are both located inside the shielding housing. The magnetic field generator is symmetrically arranged at the lower edge of the opening. The magnetic field generator is connected to the shielding housing. The electric field sensor is located below the magnetic field generator. The magnetic field generator is used to generate a magnetic field to deflect the ion flow in the electric field to be measured entering from the opening; The electric field sensor is used to measure the electric field of the electric field to be measured after the ion flow has been removed, and to obtain electric field data.
2. The apparatus according to claim 1, characterized in that, The magnetic field generator is also used to transfer the deflected ion stream to the shielding housing.
3. The apparatus according to claim 1, characterized in that, The electric field sensor device further includes a sensitive electrode, which is disposed below the magnetic field generator. The sensitive electrode is isolated from the magnetic field generator by an insulating medium. The sensitive electrode is located directly below the opening. The sensitive electrode is connected to the electric field sensor by a coaxial shielded wire. The sensitive electrode is used to sense the electric field to be measured after the ion flow has been removed, generate a corresponding charge, and transmit the charge to the electric field sensor.
4. The apparatus according to claim 3, characterized in that, The electric field sensor is specifically used for: The electric field data is obtained by measuring the electric field based on the amount of charge.
5. The apparatus according to claim 3, characterized in that, The electric field sensor includes an inner cover plate, a current-to-voltage conversion circuit, a digital processing module, and multiple sets of sensing electrodes. The inner cover plate is connected to the sensitive electrode via a coaxial shielded wire. The sensing electrode sets are located below the inner cover plate and are connected to the current-to-voltage conversion circuit, which is connected to the digital processing module. The inner cover plate is used to generate a corresponding internal electric field according to the amount of charge. The sensing electrode group is used to sense the internal electric field to obtain an induced current; The current-to-voltage conversion circuit is used to convert the induced current to obtain the induced voltage; The digital processing module is used to perform digital phase-locked amplification on the induced voltage to obtain the electric field data.
6. The apparatus according to claim 5, characterized in that, The sensing electrode group includes a positive sensing electrode, a negative sensing electrode, and a shielding electrode. The shielding electrode is connected to ground, and the positive sensing electrode and the negative sensing electrode are respectively connected to the current-voltage conversion circuit. The shielding electrode is used to reciprocate in response to the internal electric field; The positive and negative induction electrodes are used to generate induced current based on the reciprocating position of the shielding electrode.
7. The apparatus according to claim 1, characterized in that, The shielding shell has through holes on both sides, which serve as channels for the conductors to pass through, so that the shielding shell and the conductors can be connected at the same potential.
8. A method for inverting line voltage, characterized in that, The method includes the following steps: Acquire electric field data measured by the electric field sensor device as described in any one of claims 1 to 7; Based on a preset electric field-voltage inversion model, the electric field data is inverted and calculated to obtain the line voltage.
9. An electronic device, characterized in that, include: At least one processor; At least one memory for storing at least one program; When the at least one program is executed by the at least one processor, the at least one processor performs the method as described in claim 8.
10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the method of claim 8.