An intelligent power module

Abstract

The application belongs to the technical field of semiconductor, and discloses an intelligent power module, which comprises a substrate, a circuit wiring layer, a rectifier bridge unit, a PFC unit, an inverter unit, a control IC unit and a plurality of pins. The application realizes the integration of functions originally realized by a plurality of independent packaged devices in one module by reasonably arranging the rectifier bridge unit, the PFC unit, the inverter unit and the control IC unit on a single substrate, thereby obtaining a highly integrated power module structure in the overall form. The integrated structure design effectively reduces the installation area of the module in the whole machine, and provides more flexible board space for the miniaturized design of terminal products.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, and specifically relates to an intelligent power module. Background Technology

[0002] As a core component of power electronic systems, intelligent power modules are widely used in variable frequency home appliances, industrial motor drives, new energy power generation, and electric vehicles. Their main function is to convert input AC or DC power into a form of electrical energy suitable for the load, and to achieve speed control and energy management for loads such as motors. With the miniaturization and thinning of end-use products, and the continuous improvement of power density, higher requirements are being placed on the integration and structural compactness of intelligent power modules.

[0003] In existing intelligent power module designs, the rectifier bridge unit, power factor correction unit, inverter unit, and control unit are typically independent, packaged discrete components, mounted separately on the main circuit board of the entire device, and electrically connected to each other via printed circuits on the circuit board. While this discrete layout can functionally meet basic power conversion requirements, it also has significant drawbacks. Firstly, each functional unit occupies a different area on the circuit board, requiring reserved wiring space and safety clearances, resulting in a large area occupied by the modules in the overall device, making it difficult to adapt to the trend of product miniaturization. Secondly, since each unit is an independently packaged device, it needs to be mounted and soldered separately during the overall manufacturing process, involving multiple assembly steps, which not only prolongs the production cycle but also increases the cost of mounting equipment and labor. Furthermore, the connections between units via circuit board traces are long, easily introducing parasitic inductance and resistance, which may adversely affect the system's electromagnetic compatibility and conversion efficiency under high-frequency switching conditions. Summary of the Invention

[0004] This application aims to improve at least one technical problem in the background art.

[0005] This application provides an intelligent power module, including: A substrate, wherein one side of the substrate is used as the arrangement surface; A circuit wiring layer is disposed on the arrangement surface, and the circuit wiring layer includes a first region, a second region, a third region and a fourth region from left to right; A rectifier bridge unit is disposed on the first region and is electrically connected to the circuit wiring layer; A PFC unit is disposed on the second region and is electrically connected to the circuit wiring layer; An inverter unit is disposed on the third region and is electrically connected to the circuit wiring layer; A control IC unit is disposed on the fourth region and is electrically connected to the circuit wiring layer; Several pins, one end of which is electrically connected to the circuit wiring layer.

[0006] The beneficial effects of this application are as follows: By rationally zoning the rectifier bridge unit, PFC unit, inverter unit, and control IC unit on a single substrate, this application integrates functions that originally required multiple independently packaged devices into a single module, thereby achieving a highly integrated power module structure in its overall form. This integrated structural design effectively reduces the installation area occupied by the module in the overall device, providing more flexible board layout space for the miniaturization design of terminal products.

[0007] In some embodiments, the substrate is a metal substrate, and an insulating layer is provided between the substrate and the circuit wiring layer.

[0008] In some embodiments, the rectifier bridge unit includes a first diode, a second diode, a third diode, and a fourth diode spaced apart on the first region.

[0009] In some embodiments, the PFC unit includes at least one of a first component and a second component, wherein the first component includes at least one of an IGBT, a MOSFET, and a SiC MOSFET, and the second component includes at least one of an FRD and an SBD.

[0010] In some embodiments, the intelligent power module further includes a heat sink disposed on the second region, and both the first component and the second component are disposed on the heat sink.

[0011] In some embodiments, the inverter unit includes at least one of a third component and a fourth component, wherein the third component includes at least one of an IGBT, a MOSFET, and a SiC MOSFET, and the fourth component includes at least one of an FRD and an SBD.

[0012] In some embodiments, the substrate has through holes at both ends, and a notch is formed on the side of the through hole facing the edge of the substrate.

[0013] In some embodiments, the smart power module further includes a molding compound covering the circuit wiring layer, the rectifier bridge unit, the PFC unit, the inverter unit, and the control IC unit, with the free ends of the pins extending out of the molding compound.

[0014] In some embodiments, a positioning surface is formed at the end of the molding compound away from the substrate, and a boss is provided at each of the four corners of the positioning surface.

[0015] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0016] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 A schematic diagram of the structure of an intelligent power module according to one embodiment; Figure 2 A cross-sectional view of a smart power module according to one embodiment; Figure 3 This is a schematic diagram of the structure of a boss in one embodiment.

[0017] In the attached diagram: 100 - substrate; 110 - through-hole; 200 - circuit wiring layer; 210 - first region; 220 - second region; 230 - third region; 240 - fourth region; 310 - first diode; 320 - second diode; 330 - third diode; 340 - fourth diode; 410 - FRD; 420 - SBD; 430 - first IGBT; 510 - second IGBT; 520 - third IGBT; 530 - fourth IGBT; 540 - fifth IGBT; 550 - sixth IGBT; 560 - seventh IGBT; 600 - control IC unit; 710 - heat sink; 720 - metal bonding wire; 800 - molding compound; 810 - boss; 900 - pin. Detailed Implementation

[0018] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0019] In the description of this application, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0020] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0021] In the description of this specification, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature.

[0022] refer to Figures 1 to 3 This application provides an intelligent power module, comprising: Substrate 100, one side of which is used as a mounting surface; A circuit wiring layer 200 is disposed on the arrangement surface, and the circuit wiring layer 200 includes a first region 210, a second region 220, a third region 230 and a fourth region 240 from left to right. A rectifier bridge unit is disposed on the first region 210 and is electrically connected to the circuit wiring layer 200; A PFC unit is disposed on the second region 220 and is electrically connected to the circuit wiring layer 200; An inverter unit is disposed on the third region 230 and is electrically connected to the circuit wiring layer 200; A control IC unit 600 is disposed on the fourth region 240 and is electrically connected to the circuit wiring layer 200. A plurality of pins 900, one end of which is electrically connected to the circuit wiring layer 200.

[0023] The intelligent power module provided in this application has a core structure based on a substrate 100. One side of the substrate 100 is defined as a mounting surface, used to carry the main functional components and electrical connections of the module. A circuit wiring layer 200 is provided on the mounting surface, which serves as the electrical signal transmission framework inside the module. From left to right, the circuit wiring layer 200 is divided into a first region 210, a second region 220, a third region 230, and a fourth region 240. These four regions are not physically separated, but rather logically divided according to the functional units installed. A rectifier bridge unit is located in the first region 210 and is electrically connected to the circuit wiring layer 200, used to convert externally input AC power into pulsating DC power. A PFC unit is located in the second region 220 and is also electrically connected to the circuit wiring layer 200, used to perform power factor correction on the rectified DC power to improve energy utilization efficiency and reduce harmonic interference. An inverter unit, located in the third region 230 and electrically connected to the circuit wiring layer 200, converts the DC power processed by the PFC unit into AC power with adjustable frequency and voltage to drive the load. A control IC unit 600, located in the fourth region 240 and electrically connected to the circuit wiring layer 200, generates and outputs control signals to the aforementioned units to achieve real-time monitoring and logical control of the entire intelligent power module's operating status. Furthermore, the module is equipped with several pins 900, one end of which is electrically connected to the circuit wiring layer 200, and the other end extends outside the module, serving as an interface for electrical connection between the module and external circuits. By integrating the rectifier bridge unit, PFC unit, inverter unit, and control IC unit 600 into a designated area of ​​the same substrate 100, and using the circuit wiring layer 200 to achieve electrical interconnection between the units, this application reduces the housing space and the number of pins 900 required when each unit is packaged separately, making the overall structure more compact and helping to reduce the overall size. At the same time, by reducing the assembly steps of independent components, the assembly process of the whole machine is also simplified, reducing production costs and process complexity.

[0024] In some embodiments, the substrate 100 is a metal substrate, and an insulating layer is provided between the substrate 100 and the circuit wiring layer 200.

[0025] The metal substrate is specifically made of aluminum or aluminum alloy and has an upper surface and a lower surface arranged opposite each other. The upper surface serves as the mounting surface, while the lower surface serves as the heat dissipation surface. Aluminum or aluminum alloy itself has good thermal conductivity. The heat generated by the functional units inside the module during operation can be transferred to the metal substrate through the circuit wiring layer 200 and dissipated outward from the lower surface. This helps to reduce the internal operating temperature of the module, thereby providing a more favorable thermal environment for the stable operation of the module. At the same time, the insulating layer can electrically isolate the circuit wiring layer 200 from the conductive metal substrate, which helps to meet the withstand voltage requirements between the high-voltage circuit section and the substrate 100, thereby reducing the risk of breakdown or leakage. Through the above-mentioned structure of the metal substrate and the insulating layer, this application achieves high-density integration of various functional units while effectively balancing the module's heat dissipation capacity and electrical safety performance, which helps to improve the reliability of the module under long-term continuous operation conditions.

[0026] In addition, the metal substrate itself has high mechanical strength, which can provide stable support for the entire module. At the same time, its lower surface serves as a heat dissipation surface, making it easy to directly mount the module onto an external heat sink, thereby simplifying the system-level heat dissipation design and reducing the difficulty of implementing the overall thermal management solution.

[0027] In some embodiments, the rectifier bridge unit includes a first diode 310, a second diode 320, a third diode 330, and a fourth diode 340 spaced apart on the first region 210.

[0028] The rectifier bridge unit in this application does not use a single-package rectifier bridge device, but is composed of four independent diodes: a first diode 310, a second diode 320, a third diode 330, and a fourth diode 340. These four diodes are spaced apart on the first region 210 of the substrate 100. Compared to integrating four diodes into a single package, arranging each diode independently and spaced apart on the surface of the substrate 100 allows the heat generated by each diode during operation to be directly transferred to the substrate 100 through its respective mounting position, preventing heat accumulation within the confined package space. Simultaneously, the spaced distribution helps increase the physical distance between the diodes, thereby reducing thermal coupling between adjacent diodes, which helps lower the operating junction temperature of each diode and makes the overall heat distribution of the rectifier bridge unit more uniform. Furthermore, the independent layout of each diode provides greater flexibility in the routing design of the circuit wiring layer 200. During the design phase, routing optimization can be performed independently based on the current path of each diode, thereby helping to reduce mutual electrical interference and improve the operational stability of the rectifier bridge unit.

[0029] In some embodiments, the PFC unit includes at least one of a first component and a second component, wherein the first component includes at least one of an IGBT, a MOSFET, and a SiC MOSFET, and the second component includes at least one of an FRD and an SBD.

[0030] In this specific embodiment, the PFC unit includes FRD410, SBD 420 and a first IGBT 430 spaced apart on the second region 220.

[0031] The PFC unit in this application adopts a discrete device layout, specifically including an FRD 410, an SBD 420, and a first IGBT 430 spaced apart on the second region 220. It should be noted that the FRD 410 is a fast recovery diode, the SBD 420 is a Schottky barrier diode, and the first IGBT 430 is an insulated-gate bipolar transistor; these three together constitute the core of the power stage of the PFC unit. Similar to the spaced diodes in the aforementioned rectifier bridge unit, the FRD 410, SBD 420, and first IGBT 430 are independently and spaced apart on the second region 220 of the substrate 100. This allows the heat generated by each device during operation to be directly transferred to the substrate 100 through its respective mounting position, avoiding the heat accumulation problem caused by multiple heat sources concentrated in the same package. Meanwhile, since the switching frequency and conduction loss characteristics of FRD 410, SBD 420 and the first IGBT 430 are different during PFC operation, their heat generation and heat generation time are also different. By distributing them in an alternating manner, the thermal coupling effect between the devices can be reduced, which is conducive to maintaining a relatively independent thermal environment for each device during operation, thereby reducing the temperature influence between them and making the overall heat distribution of the PFC unit more balanced.

[0032] In some embodiments, the intelligent power module further includes a heat sink 710 disposed on the second region 220, and both the first component and the second component are disposed on the heat sink 710.

[0033] In this specific embodiment, the FRD 410, the SBD 420 and the first IGBT 430 are all disposed on the heat sink 710.

[0034] In the PFC unit, the FRD 410, SBD 420, and first IGBT 430 are often the devices with relatively concentrated losses. By placing a single heat sink between the three devices and the circuit wiring layer 200, the concentrated heat generated by the SBD 420 and the first IGBT 430 can be evenly distributed and initially diffused within the heat sink, avoiding local hot spot accumulation, thanks to the larger effective heat conduction area and heat capacity of the heat sink. The small amount of heat generated by the FRD 410 can also be simultaneously dissipated through the same heat dissipation structure, making full use of the heat sink's thermal conductivity. The heat generated by the devices is uniformly transferred downwards to the circuit wiring layer 200 and the substrate 100 via this heat sink, resulting in a regular and uniform heat conduction path and a more even heat flow distribution, which can effectively improve the overall efficiency of heat transfer from the devices to the substrate 100. At the same time, the single heat sink solution reduces the number of heat dissipation components, simplifies the module assembly process and structural complexity, and helps to reduce the overall module size and manufacturing cost. In summary, the independent spacing of the FRD 410, SBD420, and the first IGBT 430, combined with the full-area heatsink design covering all three, enables the PFC unit to achieve a balanced and reasonable configuration in terms of thermal management while meeting the power factor correction function requirements. This is beneficial to improving the reliability and service life of the PFC unit and even the entire intelligent power module under continuous operating conditions.

[0035] In some embodiments, the inverter unit includes at least one of a third component and a fourth component, wherein the third component includes at least one of an IGBT, a MOSFET, and a SiC MOSFET, and the fourth component includes at least one of an FRD and an SBD.

[0036] In this specific embodiment, the inverter unit includes a second IGBT 510, a third IGBT 520, a fourth IGBT 530, a fifth IGBT 540, a sixth IGBT 550, and a seventh IGBT 560 that are spaced apart on the third region 230.

[0037] The inverter unit in this application employs a discrete device layout, specifically including a second IGBT 510, a third IGBT 520, a fourth IGBT 530, a fifth IGBT 540, a sixth IGBT 550, and a seventh IGBT 560 spaced apart on the third region 230. These six IGBTs together form a three-phase inverter bridge arm, used to convert the DC power output from the PFC unit into three-phase AC power with adjustable frequency and voltage to drive external loads. Arranging the six IGBTs independently and spaced apart on the third region 230 of the substrate 100 allows the heat generated by each IGBT during operation to be directly transferred to the substrate 100 through its respective mounting position, avoiding the heat concentration problem caused by integrating multiple IGBTs into a single package. During the operation of the inverter unit, the six IGBTs alternately turn on and off according to a specific timing sequence. The timing and heat generation of each device differ. By distributing them at intervals, the physical distance between the IGBTs is increased, reducing thermal coupling effects between adjacent devices and thus minimizing mutual influence on operating temperature. This contributes to a more uniform heat distribution across the entire inverter unit. Furthermore, the inverter unit involves high voltages and currents during operation. Maintaining a certain distance between the IGBTs helps improve the insulation withstand voltage between devices, reducing the risk of electrical breakdown caused by insufficient spacing. It also provides more space for the routing design of the circuit wiring layer 200, facilitating the optimization of power and drive circuit routing paths and reducing the impact of parasitic inductance and resistance on switching performance. In summary, distributing the second IGBT 510 to the seventh IGBT 560 at intervals in the third region 230 provides a more reasonable configuration for the inverter unit in terms of thermal management, electrical safety, and wiring optimization, which is beneficial for improving the inverter unit's operating efficiency and long-term operational reliability.

[0038] In other embodiments of this application, passive components such as resistors and capacitors, as well as power switching devices such as MOSFETs and SiC MOSFETs, are also disposed on the circuit wiring layer 200. These components and devices are arranged at corresponding positions on the substrate 100 according to their respective electrical functional requirements and are electrically connected to the circuit wiring layer 200, working together with the rectifier bridge unit, PFC unit, and inverter unit to complete the power conversion function of the module. Since SiC MOSFETs have a higher switching frequency than traditional silicon-based devices in operation, although their switching losses are generally lower, their heat flux density per unit area is larger, and the heat generation is more concentrated. Therefore, in these embodiments, a corresponding heat sink is disposed between the SiC MOSFET and the circuit wiring layer 200 to establish a low thermal resistance heat conduction path between the SiC MOSFET and the substrate 100, so that heat can be transferred downward to the substrate 100 and the external heat dissipation structure in a timely manner, thereby ensuring that the junction temperature of the SiC MOSFET is within a reasonable operating range. Resistors, capacitors, and conventional MOSFETs, due to their relatively low heat generation, can be directly mounted on the surface of the circuit wiring layer 200. The heat dissipation can be achieved by the metal layer of the circuit wiring layer 200 and the substrate 100, which is sufficient to meet the working requirements.

[0039] In other embodiments of this application, the aforementioned functional units and devices on the wiring layer 200, including the first diode 310, the second diode 320, the third diode 330, the fourth diode 340, the FRD 410, the SBD 420, the first IGBT 430, and the second IGBT 510 to the seventh IGBT 560, can be electrically connected to the wiring layer 200 via metal bonding wires 720. The metal bonding wire 720 is an interconnection method widely used in power module packaging; one end is connected to the electrode pad on the device surface, and the other end is connected to the corresponding connection terminal on the wiring layer 200, thereby forming an electrical path from the device to the wiring layer 200.

[0040] In some implementations, different devices can also be directly electrically connected via metal bonding lines 720. This eliminates the need for routing through the circuit wiring layer 200, allowing direct connection from the electrode pads of one device to the electrode pads of another, thus forming a more compact internal interconnect path. Using metal bonding lines 720 for internal connections allows for relatively flexible placement of the devices, freeing them from the constraints of fixed routing channels on the circuit wiring layer 200. Furthermore, the bonding lines themselves have good flexibility and curvature, adapting to the interconnection needs of devices of different heights, and achieving electrical connection without introducing excessive parasitic parameters. Combined with the aforementioned spacing of the devices on the substrate 100 and the configuration of the heat sinks, the connection method using metal bonding lines 720 further provides favorable conditions for optimizing the overall module layout and improving electrical performance.

[0041] In some embodiments, the substrate 100 has through holes 110 at both ends, and the through holes 110 have notches on the side facing the edge of the substrate 100.

[0042] The substrate 100 has through holes 110 at both ends, and these through holes 110 have notches on the side facing the edge of the substrate 100. That is, the through hole 110 is not a closed circular or square opening, but a semi-open structure with an open notch at the edge, which can be considered as a concave notch opening towards the outside of the substrate 100. This structural design mainly considers the assembly requirements between the module and the external heat sink. When installing the smart power module onto the heat sink, it is usually necessary to use fasteners such as screws to pass through the through holes 110 on the substrate 100 to lock and fix the module. The through hole 110 structure with notches allows the screws to not be completely passed through closed holes during assembly. Instead, the module can be pushed into the screw position pre-installed on the heat sink from the notch side, or the module can be slightly adjusted within a certain range on the plane of the substrate 100 before final tightening. This helps to compensate for positional tolerances between the substrate 100 and the heat sink caused by processing or assembly, reducing assembly difficulty. Meanwhile, this open-notch structure also reduces local stress concentration on the substrate 100 during fastener tightening, which helps protect the substrate 100 from damage under thermal expansion or mechanical vibration. After assembly, the screw heads press against the surface of the substrate 100 at the edge of the through-hole 110, reliably fixing the module to the heat sink and ensuring a good fit between the lower surface of the substrate 100 and the upper surface of the heat sink, thus ensuring a smooth heat dissipation path. In summary, by providing through-holes 110 with notches at both ends of the substrate 100, this application achieves a fixed connection between the module and the heat sink while also considering assembly convenience and stress adaptability, which helps improve the assembly quality and long-term reliability of the module in practical applications.

[0043] In some embodiments, the smart power module further includes a molding compound 800 that covers the circuit wiring layer 200, the rectifier bridge unit, the PFC unit, the inverter unit, and the control IC unit 600, with the free ends of the pins 900 extending outward from the molding compound 800.

[0044] The molding compound 800 typically uses insulating encapsulation materials such as epoxy resin, formed through injection molding or transfer molding processes. It provides mechanical protection for the internal electronic components of the module, preventing damage from external moisture, dust, or mechanical impacts. It also electrically isolates high-voltage areas from the external environment, improving the module's insulation withstand voltage level. Furthermore, one end of the pin 900 is electrically connected to the circuit wiring layer 200, while its free end extends outward from the molding compound 800. This allows the module to maintain a reliable electrical connection to an external circuit board even after encapsulation, thus balancing the integrity of the module's packaging with the operability of external interfaces.

[0045] In some embodiments, the molding compound 800 has a positioning surface at the end away from the substrate 100, and the four corners of the positioning surface are respectively provided with bosses 810.

[0046] In the injection molding process, the inner wall of the mold used to form the encapsulation body 800 can be pre-set with recessed grooves corresponding to the positions of the bosses 810. When the molten encapsulation material is injected into the mold cavity, the material fills the grooves. After the material solidifies and is demolded, bosses 810, which are integrally formed with the encapsulation body 800, are naturally formed at both ends of the positioning surface. The entire molding process does not require additional parts or subsequent processing steps. The size and position of the bosses 810 are determined by the mold grooves, thus exhibiting good consistency and repeatability.

[0047] When the intelligent power module is installed inside the whole machine, the positioning surface usually faces the top of the module, that is, the side opposite to the substrate 100. The bosses 810 at the four corners of the positioning surface are higher than the middle area of ​​the positioning surface in the height direction. This allows the four bosses 810 to preferentially contact the components or structures above the module when other components or structures are arranged above it, thereby creating a certain gap between the middle area of ​​the positioning surface at the top of the module and the components above. The existence of this gap prevents the top of the module from being tightly fitted with the components above, but leaves a gap for air circulation. The heat generated by the functional units inside the module during operation can be transferred downward through the heat dissipation path of the lower surface of the substrate 100, and can also be conducted upward through the molding compound 800 to the positioning surface and its bosses 810 area, and dissipated outward through convection through this gap, thus providing an auxiliary heat dissipation channel at the top of the module. Since the bosses 810 and the molding compound 800 are integrally injection molded, their positional accuracy and dimensional consistency are good, and the height of the gap is relatively stable and will not be significantly affected by assembly deviations. With this structural design, the module gains additional top air convection heat dissipation capability while maintaining its original encapsulation protection function, which is beneficial for flexibly improving the overall thermal management effect of the module according to actual application needs.

[0048] The above description is only a preferred embodiment of this application. It should be noted that those skilled in the art can make several improvements and additions without departing from the method of this application, and these improvements and additions should also be considered within the scope of protection of this application.

Claims

1. A smart power module, characterized in that, include: A substrate, wherein one side of the substrate is used as the arrangement surface; A circuit wiring layer is disposed on the arrangement surface, and the circuit wiring layer includes a first region, a second region, a third region and a fourth region from left to right; A rectifier bridge unit is disposed on the first region and is electrically connected to the circuit wiring layer; A PFC unit is disposed on the second region and is electrically connected to the circuit wiring layer; An inverter unit is disposed on the third region and is electrically connected to the circuit wiring layer; A control IC unit is disposed on the fourth region and is electrically connected to the circuit wiring layer; Several pins, one end of which is electrically connected to the circuit wiring layer.

2. The intelligent power module according to claim 1, characterized in that, The substrate is a metal substrate, and an insulating layer is provided between the substrate and the circuit wiring layer.

3. The intelligent power module according to claim 1, characterized in that, The rectifier bridge unit includes a first diode, a second diode, a third diode, and a fourth diode spaced apart on the first region.

4. The intelligent power module according to claim 1, characterized in that, The PFC unit includes at least one of a first component and a second component. The first component includes at least one of IGBT, MOSFET and SiC MOSFET, and the second component includes at least one of FRD and SBD.

5. The intelligent power module according to claim 4, characterized in that, The intelligent power module also includes a heat sink, which is disposed on the second region, and both the first component and the second component are disposed on the heat sink.

6. The intelligent power module according to claim 1, characterized in that, The inverter unit includes at least one of a third component and a fourth component. The third component includes at least one of an IGBT, a MOSFET, and a SiC MOSFET. The fourth component includes at least one of an FRD and an SBD.

7. The intelligent power module according to claim 1, characterized in that, The substrate has through holes at both ends, and a notch is formed on the side of the through hole facing the edge of the substrate.

8. The intelligent power module according to claim 1, characterized in that, The intelligent power module also includes a plastic package that covers the circuit wiring layer, the rectifier bridge unit, the PFC unit, the inverter unit, and the control IC unit, with the free ends of the pins extending out of the plastic package.

9. The intelligent power module according to claim 8, characterized in that, The molding compound has a positioning surface at the end away from the substrate, and the four corners of the positioning surface are respectively provided with bosses.

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