Image sensor, camera device, image generation method, apparatus and medium

Abstract

The present disclosure relates to an image sensor, a camera, an image generation method, a device and a medium. The image sensor comprises: a micro superlens array; the micro superlens array comprises a plurality of types of micro superlens sub-arrays, the micro superlens sub-arrays of the same type are of the same shape, and the micro superlens sub-arrays of different types are of different shapes; wherein the micro superlens sub-arrays of different types are used to converge incident light rays of different wavebands. The image sensor flexibly sets the shapes of the plurality of types of micro superlens sub-arrays, thereby flexibly regulating the focal lengths of the converged incident light rays of different wavebands, and further flexibly adjusting the quantum efficiencies corresponding to the incident light rays of different wavebands.

Description

Technical Field

[0001] This disclosure relates to the field of image generation, and more particularly to an image sensor, camera device, image generation method, apparatus, and medium. Background Technology

[0002] In camera systems, the image sensor used can be a CIS (CMOS Image Sensor). A CIS includes a microlens array (MLA), a color filter (CF), an anti-reflective layer, a silicon (Si) layer, a photodiode layer, and a circuit layer. The MLA collects incident light, focusing it downwards. After passing through the CF, the light reaches the Si layer and the circuit layer, where the light signal is converted into an electrical signal, thus recording intensity information to generate an image.

[0003] Quantum efficiency (QE) is the efficiency of converting optical signals into electrical signals. To enhance QE, MLA (Medium-Range Amplifier) ​​is crucial for focusing incident light rays. Summary of the Invention

[0004] To overcome the problems existing in related technologies, this disclosure provides an image sensor, a camera device, an image generation method, an apparatus, and a medium.

[0005] According to a first aspect of the present disclosure, an image sensor is provided, the image sensor comprising:

[0006] A microlens array; the microlens array includes various types of microlens subarrays, each microlens subarray comprising multiple microlens units. In a microlens subarray of the same type, the multiple microlens units have the same size and are distributed in the same location. In microlens subarrays of different types, the multiple microlens units have different sizes and / or different distribution locations. The distribution location of the microlens unit refers to the position of the microlens unit within the microlens subarray.

[0007] The different types of micro-tunnel subarrays are used to converge incident light rays of different wavelengths.

[0008] In some embodiments, the superlens unit includes a superlens and a substrate located below the superlens.

[0009] In some embodiments, the dimensions of the superlens include height and width, and the multiple superlenses in the micro-superlens array have the same height.

[0010] In some embodiments, the distance between any two adjacent superlenses in the same microlens subarray is a preset distance, which is determined based on the size of the microlens subarray and the number of superlens units included in the microlens subarray.

[0011] In some embodiments, the size of each of the microlens subarrays is the same as the size of a pixel.

[0012] In some embodiments, the N*N superlens units in each of the microlens subarrays are arranged in an N-row N-column configuration, where N is an integer greater than 1.

[0013] In some embodiments, the image sensor further includes:

[0014] A filter located below each microlens subarray; wherein the filters below microlens subarrays of the same type are of the same color.

[0015] In some embodiments, the image sensor further includes at least one of the following structures:

[0016] An anti-reflective layer located beneath the filter;

[0017] The silicon layer located beneath the antireflective layer;

[0018] The photodiode layer located beneath the silicon layer;

[0019] The circuit layer located below the photodiode layer;

[0020] Metal lattices located on the left and right sides of the silicon layer;

[0021] A deep trench isolation layer located beneath the metal grid.

[0022] In some embodiments, the phase distribution of the microlens subarray satisfies the following formula:

[0023]

[0024] in, A represents the phase distribution of the microlens subarray. i Let represent the preset coefficient, I be a positive integer, ρ represent the normalized radial coordinate, x represent the horizontal coordinate of the microlens subarray, y represent the vertical coordinate of the microlens subarray, and R0 represent half the side length of the microlens subarray.

[0025] In some embodiments, the superlens is symmetrical.

[0026] In some embodiments, the superlens includes any one of a cylindrical superlens, a square superlens, or a cross-shaped superlens.

[0027] In some embodiments, the material of the superlens is a semiconductor material.

[0028] In some embodiments, the semiconductor material includes at least one of silicon, gallium nitride, titanium oxide, and silicon nitride.

[0029] In some embodiments, the substrate is transparent.

[0030] In some embodiments, the substrate is made of at least one of glass and sapphire.

[0031] In some embodiments, the width of the superlens is 50 nanometers to 200 nanometers, and the height of the superlens is 100 nanometers to 1000 nanometers.

[0032] According to a second aspect of the present disclosure, a camera device is provided, the camera device including the image sensor described in the first aspect of the present disclosure.

[0033] According to a third aspect of the present disclosure, an image generation method is provided, applied to an electronic device, the electronic device including the image sensor described in the first aspect of the present disclosure, the method comprising:

[0034] In response to the shooting command, the micro-lens array in the image sensor is used to converge the incident light rays so as to convert the optical signal corresponding to the incident light rays into an electrical signal;

[0035] The target image is generated based on the converted electrical signal.

[0036] According to a fourth aspect of the present disclosure, an image generating apparatus is provided, disposed in an electronic device, the electronic device including the image sensor described in the first aspect of the present disclosure, the apparatus comprising:

[0037] The conversion module is configured to, in response to a shooting command, use the microlens array in the image sensor to converge the incident light rays, so as to convert the optical signal corresponding to the incident light rays into an electrical signal;

[0038] The image generation module is configured to generate the target image based on the converted electrical signal.

[0039] According to a fifth aspect of the present disclosure, an electronic device is provided, comprising:

[0040] The image sensor described in the first aspect of the embodiments of this disclosure;

[0041] processor;

[0042] Memory used to store processor-executable instructions;

[0043] The processor is configured to perform the image generation method as described in the third aspect of the embodiments of this disclosure.

[0044] According to a sixth aspect of the present disclosure, a non-transitory computer-readable storage medium is provided, wherein when instructions in the storage medium are executed by a processor of an electronic device, the electronic device is enabled to perform an image generation method as described in a third aspect of the present disclosure.

[0045] The method described above, as disclosed in this invention, has the following beneficial effects:

[0046] The image sensor provided in this disclosure includes a microlens array, which comprises multiple types of microlens subarrays. Microlens subarrays of the same type have the same shape, while microlens subarrays of different types have different shapes. Different types of microlens subarrays are used to converge incident light rays of different wavelengths. Therefore, by flexibly setting the shapes of multiple types of microlens subarrays, the focal length of the converged incident light rays of different wavelengths can be flexibly adjusted, thereby enabling flexible adjustment of the quantum efficiency corresponding to the incident light rays of each wavelength.

[0047] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0048] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0049] Figure 1 This is a schematic diagram of an image sensor in a related art, illustrated according to an exemplary embodiment;

[0050] Figure 2A This is a schematic diagram of an image sensor according to an exemplary embodiment;

[0051] Figure 2B This is a schematic diagram of a superlens unit according to an exemplary embodiment;

[0052] Figure 2C This is a schematic diagram of a microlens subarray according to an exemplary embodiment;

[0053] Figure 2D This is a schematic diagram of an image sensor according to an exemplary embodiment;

[0054] Figure 3 This is a schematic diagram illustrating a phase distribution according to an exemplary embodiment;

[0055] Figure 4 This is a schematic diagram illustrating a focus according to an exemplary embodiment;

[0056] Figures 5A-5C This is a schematic diagram illustrating the convergence of incident light rays in an image sensor according to an exemplary embodiment;

[0057] Figure 6 This is a flowchart illustrating an image generation method according to an exemplary embodiment;

[0058] Figure 7 This is a block diagram illustrating an image generation apparatus according to an exemplary embodiment;

[0059] Figure 8 This is a block diagram of an electronic device according to an exemplary embodiment. Detailed Implementation

[0060] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the invention as detailed in the appended claims.

[0061] Figure 1 This is a schematic diagram illustrating an image sensor in the related art according to an exemplary embodiment, see [link to diagram]. Figure 1 , Figure 1 The following explanation uses three modules in an image sensor as an example. Each module includes ML 11, CF 12, Si layer 13, circuit layer 14, metal lattice 15, and DTI (Deep Trench Isolation) 16. Of course, an image sensor may also include photodiode layers, anti-reflection layers, and other structures. Figure 1 In the first group of modules, CF 12 is used to filter incident light in the red band; in the second group of modules, CF 12 is used to filter incident light in the green band; and in the third group of modules, CF 12 is used to filter incident light in the blue band. Figure 1It can be seen that the shape of ML 11 in each module is the same, while the incident light has a wavelength distribution of 400nm-700nm. A single curved lens cannot simultaneously converge all wavelengths well, resulting in different focal lengths for the red, green, and blue incident light after being converged by ML 11. Specifically, the focal length of the red incident light is greater than that of the green incident light, and the focal length of the green incident light is greater than that of the blue incident light. For the blue incident light, due to its shorter focal length, the QE is lower, thus affecting the final image quality. The focal length of the incident light can also be referred to as the focal depth of the incident light in Si layer 13.

[0062] To address the issue of image sensors in the aforementioned related technologies being unable to flexibly adjust focal length and quantum efficiency (QE), this disclosure provides an image sensor comprising a microlens array. The microlens array includes multiple types of microlens subarrays, with subarrays of the same type having the same shape, and subarrays of different types having different shapes. These different types of microlens subarrays are used to converge incident light rays of different wavelengths. Therefore, by flexibly setting the shapes of multiple types of microlens subarrays, the focal length after convergence of incident light rays of different wavelengths can be flexibly controlled, thereby achieving flexible adjustment of the quantum efficiency corresponding to each wavelength band of incident light. Furthermore, if higher quantum efficiency is required, the focal length of the converged incident light rays can be increased by setting the shape of the microlens subarrays, allowing the quantum efficiency to be freely and flexibly adjusted according to actual needs.

[0063] Figure 2A This is a schematic diagram of an image sensor according to an exemplary embodiment, see [link to diagram]. Figure 2A The image sensor includes a microlens array 20, which includes multiple types of microlens subarrays 21. Each microlens subarray 21 includes multiple microlens units 211. Multiple microlens units 211 of the same type are the same size and are distributed in the same position. Multiple microlens units 211 of different types are different in size and / or distributed in different positions. The distribution position of the microlens unit 211 refers to the position of the microlens unit 211 in the microlens subarray 21. Different types of microlens subarrays 21 are used to converge incident light rays of different wavelengths.

[0064] The same size and the same distribution position of multiple superlens units 211 in the same type of micro-superlens subarray 21 means that the superlens units 211 located in the same position in the same type of micro-superlens subarray 21 have the same size, that is, the shape of the same type of micro-superlens subarray 21 is the same.

[0065] The different sizes and / or different distribution positions of multiple superlens units 211 in different types of microlens subarrays 21 mean that: the sizes of superlens units 211 located at the same position in different types of microlens subarrays 21 are different; or, the sizes of superlens units 211 located at the same position in different types of microlens subarrays 21 are partially the same; or, the sizes of multiple superlens units 211 in different types of microlens subarrays 21 are exactly the same, but their distribution positions are different. In other words, even if multiple superlens units 211 in different types of microlens subarrays 21 have the same size, if their distribution positions are different, then the shapes of the different types of microlens subarrays 21 will also be different. That is, the shapes of different types of microlens subarrays 21 are different.

[0066] The size and distribution of the multiple superlens units 211 in each micro-superlens subarray 21 can be set according to actual needs, and the embodiments disclosed herein do not impose any restrictions on this.

[0067] For incident light of the same wavelength band, different types of microlens subarrays 21 have different focusing effects on the incident light of that wavelength band. Therefore, in this embodiment of the present disclosure, according to actual needs, appropriate microlens subarrays 21 are set for incident light of different wavelength bands so that the focusing effect of incident light of different wavelength bands meets the user's needs.

[0068] It should be noted that, Figure 2A The microlens subarray 21 in the image is a side view, and Figure 2A The example uses three types of microlens subarrays 21, which are used to converge incident light rays in the red, green, and blue wavelength bands, respectively. Figure 2A The following explanation uses only the 4-row, 4-column superlens unit 211 in the micro-superlens subarray 21 as an example.

[0069] In some embodiments, Figure 2B This is a schematic diagram of a superlens unit according to an exemplary embodiment, see [link to diagram]. Figure 2B The superlens unit 211 includes a superlens 2111 and a substrate 2112 located below the superlens 2111.

[0070] It should be noted that, Figure 2B The superlens 2111 in the illustration is a cylindrical superlens. In another embodiment, the superlens 2111 has symmetry and includes any one of a cylindrical superlens, a square superlens, or a cross-shaped superlens.

[0071] Regarding the size of the superlens 2111, optionally, the size of the superlens 2111 includes both height and width, and multiple superlenses 2111 in the micro-superlens array 20 have the same height. For example, from Figure 2A It can be seen that the different superlenses 2111 are located at the same height.

[0072] Optionally, the width of the superlens 2111 is 50 nanometers to 200 nanometers, and the height of the superlens 2111 is 100 nanometers to 1000 nanometers.

[0073] Optionally, the material of the superlens 2111 may be a semiconductor material, which includes at least one of silicon, gallium nitride, titanium oxide and silicon nitride.

[0074] Optionally, the substrate 2112 is transparent, and the material of the substrate 2112 includes at least one of glass and sapphire.

[0075] It should be noted that the size and material of the superlens 2111, as well as the material of the substrate 2112, can be changed according to actual needs, and this disclosure does not limit this.

[0076] In some embodiments, the N*N microlens units 211 in each microlens subarray 21 are arranged in an N-row, N-column configuration, where N is an integer greater than 1. See one example. Figure 2C The diagram shown is a schematic of a microlens subarray. Figure 2C Taking N=4 as an example, and Figure 2C The schematic diagram on the left is a top view of the microlens subarray 21, and the schematic diagram on the right is a side view of the microlens subarray 21.

[0077] In some embodiments, the distance between any two adjacent superlenses 2111 in the same microlens subarray 21 is a preset distance. This preset distance is determined based on the size of the microlens subarray 21 and the number of superlens units 211 included in the microlens subarray 21. The distance between two adjacent superlenses 2111 refers to the distance between the center points of the two adjacent superlenses 2111. Since the substrates 2112 included in each superlens unit 211 are exactly the same size, the substrates 2112 of any two adjacent superlens units 211 can be joined together. Since the center point of the superlens 2111 included in a superlens unit 211 coincides with the center point of the substrate 2112, the preset distance can be calculated based on the size of the microlens subarray 21 and the number of superlens units 211 included in the microlens subarray 21. For example, if the side length of the microlens subarray 21 is k, and there are n superlens units 211 in a row, then the preset distance is k / n.

[0078] In some embodiments, since the image sensor is used to acquire images, that is, to acquire pixel data of multiple pixels to generate an image, the size of each microlens subarray 21 is the same as the size of a single pixel. For example, the size of each microlens subarray 21 can be 0.5 micrometers to 2 micrometers.

[0079] In some embodiments, see Figure 2D The image sensor shown also includes a filter 22 located below each microlens subarray 21; wherein the filters 22 below the same type of microlens subarray 21 are of the same color. For example, if a certain type of microlens subarray 21 is used to converge incident light in the red band, then the filter 22 located below that type of microlens subarray 21 is used to filter incident light in the red band. It should be noted that... Figure 2D The example uses filters corresponding to the red, green, and blue wavelengths.

[0080] In some embodiments, see Figure 2D The image sensor shown further includes at least one of the following structures: an anti-reflective layer 23 located below the filter 22; a silicon layer 24 located below the anti-reflective layer 23; a photodiode layer 25 located below the silicon layer 24; a circuit layer 26 located below the photodiode layer 25; metal grids 27 located on the left and right sides of the silicon layer 24; and a deep trench isolation layer 28 located below the metal grids 27.

[0081] In some embodiments, the phase distribution of the microlens subarray 21 satisfies the following formula:

[0082]

[0083] in, A represents the phase distribution of the microlens subarray 21. i ρ represents the preset coefficient, I represents the normalized radial coordinate, x represents the abscissa of the microlens subarray 21, y represents the ordinate of the microlens subarray 21, and R0 represents half the side length of the microlens subarray 21.

[0084] Optionally, I can be 1, 2, 3, 4, 5, or other positive integers. For example, if I is 5... The following formula can be used to determine it:

[0085]

[0086] Among them, A1, A2, A3, A4 and A5 are preset coefficients.

[0087] For the micro-mesh subarray 21, based on the diameter distribution of the mesh lens units 211 in the micro-mesh subarray 21, the phase distribution obtained by modulating the incident light needs to be the same as or as close as possible to the phase distribution calculated by the above formula.

[0088] See one example. Figure 3 The phase distribution diagram shown is as follows. Figure 3 The horizontal axis represents the coordinates on the microlens subarray 21, and the vertical axis represents the phase.

[0089] Additionally, it should be noted that different types of micro-mesh subarrays 21 correspond to A. i Since they are different, the phase distributions of different types of micro-tunnel subarrays 21 are different. The above formula can be used to calculate the phase distributions that different types of micro-tunnel subarrays 21 need to satisfy, so as to achieve the convergence of incident light in the red, green and blue bands.

[0090] In some embodiments, after the incident light rays are converged using the microlens subarray 21 provided in this disclosure, all the light rays converge to a single focal point. The size of this focal point is smaller than the size of the diffraction-limited Airy disk, resulting in excellent focusing performance. For example, see... Figure 4 The diagram showing the focal point is as follows: Figure 4 It can be seen that the focal point 401 after the incident light rays converge is located inside the diffraction-limited Airy disk 402, and the focal point 401 is much smaller than the diffraction-limited Airy disk 402.

[0091] The above embodiments describe the structure of an image sensor. Based on these embodiments, it can be seen that if the type of the microlens subarray 21 in the image sensor is different, the convergence of incident light rays will also be different. The following will explain... Figures 5A-5CThe schematic diagram shown illustrates the convergence of incident light rays in the image sensor.

[0092] See Figures 5A-5C , Figures 5A-5C The following explanation uses three modules in an image sensor as an example. Each module includes a micro-lens subarray 21, a CF layer 22, an anti-reflection layer 23, a Si layer 24, a photodiode layer 25, a circuit layer 26, a metal lattice 27, and a DTI layer 28. Figures 5A-5C The microlens subarrays 21 in the arrays differ, therefore, the focal lengths obtained after converging the incident light rays are different. Figure 5A The focal length is the same when incident light rays in the red, green, and blue bands converge. Figure 5B The focal lengths of incident light rays from the red, green, and blue bands, converging in descending order, are: the focal length of the blue band incident light, the focal length of the green band incident light, and the focal length of the red band incident light. Figure 5C The focal lengths of the incident light rays in the red, green, and blue bands are not exactly the same after convergence. The focal lengths of the incident light rays in the blue band and green band are the same, while the focal length of the incident light rays in the red band is the smallest. Of course, other shapes of microlens subarrays 21 can also be used to flexibly adjust the focal lengths of the incident light rays in the red, green, and blue bands, thereby flexibly adjusting the corresponding QE. Similar to the above... Figure 1 Compared to the image sensors in the related technologies shown, it can be seen that the image sensor provided in this disclosure embodiment has a larger focal length after converging incident light in the green band and incident light in the blue band, thereby improving QE.

[0093] The image sensor provided in this disclosure uses microlens subarrays 21 of different shapes to flexibly adjust the depth of focus (focal length), thereby improving the QE (Quality of Focus) of incident light in the red, green, and blue bands and enhancing the image quality acquired by the image sensor. Furthermore, the targeted design of the microlens subarrays 21 for the green and blue bands achieves better focusing performance. From a manufacturing perspective, the microlens arrays 20 in this image sensor can be produced using mature semiconductor processes, compatible with CIS (Computer Integrated Systems) technology, improving processing and assembly efficiency and reducing the production cost of the image sensor.

[0094] Based on the same inventive concept, this disclosure provides a camera device that includes the image sensor described in the above embodiments. For example, this camera device can be used to acquire images. It is understood that the camera device can be applied to electronic devices such as mobile terminals, laptops, and tablets.

[0095] Based on the same inventive concept, this disclosure also provides an image generation method, which is applied to an electronic device including the image sensor described above.

[0096] Figure 6 This is a flowchart illustrating an image generation method according to an exemplary embodiment, see [link to flowchart]. Figure 6 This includes the following steps:

[0097] In step S601, in response to the shooting command, the incident light is focused using a micro-lens array in the image sensor to convert the light signal corresponding to the incident light into an electrical signal.

[0098] The image sensor is the image sensor shown in the above embodiment. The shooting command is used to instruct the acquisition of an image. The shooting command can be a command generated after the user triggers the shooting control, or it can be a command triggered by other events. This disclosure does not limit this.

[0099] During image processing, incident light rays pass sequentially through the microlens subarray, filter, antireflective layer, Si layer, and photodiode layer in the microlens array to reach the circuit layer, so as to convert the optical signal corresponding to the incident light rays into an electrical signal.

[0100] When converting an optical signal into an electrical signal, the larger the focal length of the incident light ray, the larger the QE during the conversion; the smaller the focal length of the incident light ray, the smaller the QE during the conversion.

[0101] Step S602: Generate the target image based on the converted electrical signal.

[0102] After obtaining the converted electrical signal of the incident light, the intensity information and other information of the incident light can be determined based on the electrical signal, thereby generating the target image.

[0103] The specific process for generating the target image is not limited in the embodiments disclosed herein.

[0104] In the image generation method provided in this disclosure, the image sensor uses a variety of micro-lens sub-arrays to flexibly set the shape of the array, thereby achieving flexible control of the focal length after the convergence of incident light in different bands, and thus achieving flexible adjustment of the quantum efficiency corresponding to the incident light in each band. When the quantum efficiency corresponding to the incident light in each band is improved, the image quality of the generated target image can be enhanced.

[0105] Figure 7 This is a block diagram illustrating an image generation apparatus according to an exemplary embodiment, configured in an electronic device including the image sensor shown in the above embodiment. See also... Figure 7 The device includes:

[0106] The conversion module 701 is configured to, in response to a shooting command, use a micro-lens array in the image sensor to converge the incident light rays, so as to convert the light signal corresponding to the incident light rays into an electrical signal.

[0107] The image generation module 702 is configured to generate a target image based on the converted electrical signal.

[0108] Regarding the apparatus in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the method, and will not be elaborated upon here.

[0109] This disclosure also provides an electronic device, including: an image sensor as shown in the above embodiments; a processor; and a memory for storing processor-executable instructions; wherein the processor is configured to execute the image generation method described in the above embodiments.

[0110] Figure 8 This is a block diagram of an electronic device 800 according to an exemplary embodiment.

[0111] Reference Figure 8 The electronic device 800 may include one or more of the following components: a processing component 802, a memory 804, a power supply component 806, a multimedia component 808, an audio component 810, an input / output (I / O) interface 812, a sensor component 814, and a communication component 816.

[0112] Processing component 802 typically controls the overall operation of electronic device 800, such as operations associated with display, telephone calls, data communication, camera operation, and recording operations. Processing component 802 may include one or more processors 820 to execute instructions to complete all or part of the steps of the methods described above. Furthermore, processing component 802 may include one or more modules to facilitate interaction between processing component 802 and other components. For example, processing component 802 may include a multimedia module to facilitate interaction between multimedia component 808 and processing component 802.

[0113] Memory 804 is configured to store various types of data to support the operation of electronic device 800. Examples of this data include instructions for any application or method operating on electronic device 800, contact data, phonebook data, messages, pictures, videos, etc. Memory 804 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0114] Power supply component 806 provides power to various components of electronic device 800. Power supply component 806 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to electronic device 800.

[0115] Multimedia component 808 includes a screen that provides an output interface between the electronic device 800 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touchscreen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touches, swipes, and gestures on the touch panel. The touch sensors may sense not only the boundaries of the touch or swipe action but also the duration and pressure associated with the touch or swipe operation. In some embodiments, multimedia component 808 includes a front-facing camera and / or a rear-facing camera. When the electronic device 800 is in an operating mode, such as a shooting mode or a video mode, the front-facing camera and / or the rear-facing camera may receive external multimedia data. Each front-facing camera and rear-facing camera may be a fixed optical lens system or have focal length and optical zoom capabilities.

[0116] Audio component 810 is configured to output and / or input audio signals. For example, audio component 810 includes a microphone (MIC) configured to receive external audio signals when electronic device 800 is in an operating mode, such as call mode, recording mode, and voice recognition mode. The received audio signals may be further stored in memory 804 or transmitted via communication component 816. In some embodiments, audio component 810 also includes a speaker for outputting audio signals.

[0117] I / O interface 812 provides an interface between processing component 802 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to, home buttons, volume buttons, power buttons, and lock buttons.

[0118] Sensor assembly 814 includes one or more sensors for providing state assessments of various aspects of electronic device 800. For example, sensor assembly 814 can detect the on / off state of electronic device 800, the relative positioning of components such as the display and keypad of electronic device 800, changes in position of electronic device 800 or a component of electronic device 800, the presence or absence of user contact with electronic device 800, orientation or acceleration / deceleration of electronic device 800, and temperature changes of electronic device 800. Sensor assembly 814 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. Sensor assembly 814 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, sensor assembly 814 may also include an accelerometer, gyroscope, magnetometer, pressure sensor, or temperature sensor.

[0119] Communication component 816 is configured to facilitate wired or wireless communication between electronic device 800 and other devices. Electronic device 800 can access wireless networks based on communication standards, such as WiFi, 2G, or 3G, or combinations thereof. In one exemplary embodiment, communication component 816 receives broadcast signals or broadcast-related information from an external broadcast management system via a broadcast channel. In one exemplary embodiment, communication component 816 also includes a near-field communication (NFC) module to facilitate short-range communication. For example, the NFC module may be implemented based on radio frequency identification (RFID) technology, Infrared Data Association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.

[0120] In an exemplary embodiment, the electronic device 800 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the methods described above.

[0121] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory 804 including instructions, which can be executed by a processor 820 of an electronic device 800 to perform the above-described method. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0122] This disclosure also provides a non-transitory computer-readable storage medium, wherein when the instructions in the storage medium are executed by the processor of an electronic device, the electronic device is able to perform the image generation method described above.

[0123] This disclosure also provides a computer program product, including a computer program that, when executed by a processor, implements the image generation method described above.

[0124] Other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of the invention are indicated by the following claims.

[0125] It should be understood that the present invention is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.

Claims

1. An image sensor, characterized in that, The image sensor includes: A microlens array; the microlens array includes various types of microlens subarrays, each microlens subarray comprising multiple microlens units. In a microlens subarray of the same type, the multiple microlens units have the same size and are distributed in the same location. In microlens subarrays of different types, the multiple microlens units have different sizes and / or different distribution locations. The distribution location of the microlens unit refers to the position of the microlens unit within the microlens subarray. The different types of micro-tunnel subarrays are used to converge incident light rays of different wavelengths.

2. The image sensor according to claim 1, characterized in that, The superlens unit includes a superlens and a substrate located below the superlens.

3. The image sensor according to claim 2, characterized in that, The dimensions of the superlens include height and width, and the multiple superlenses in the micro-superlens array have the same height.

4. The image sensor according to claim 2, characterized in that, The distance between any two adjacent superlenses in the same microlens subarray is a preset distance, which is determined based on the size of the microlens subarray and the number of superlens units included in the microlens subarray.

5. The image sensor according to claim 1, characterized in that, Each of the aforementioned microlens subarrays is the same size as a single pixel.

6. The image sensor according to claim 1, characterized in that, The N*N microlens units in each of the aforementioned microlens subarrays are arranged in an N-row N-column configuration, where N is an integer greater than 1.

7. The image sensor according to claim 1, characterized in that, The image sensor also includes: A filter located below each microlens subarray; wherein the filters below microlens subarrays of the same type are of the same color.

8. The image sensor according to claim 7, characterized in that, The image sensor also includes at least one of the following structures: An anti-reflective layer located beneath the filter; The silicon layer located beneath the antireflective layer; The photodiode layer located beneath the silicon layer; The circuit layer located below the photodiode layer; Metal lattices located on the left and right sides of the silicon layer; A deep trench isolation layer located beneath the metal grid.

9. The image sensor according to claim 1, characterized in that, The phase distribution of the microlens subarray satisfies the following formula: in, A represents the phase distribution of the microlens subarray. i ρ represents the preset coefficient, I represents the normalized radial coordinate, x represents the horizontal coordinate of the microlens subarray, y represents the vertical coordinate of the microlens subarray, and R0 represents half the side length of the microlens subarray.

10. The image sensor according to claim 2, characterized in that, The superlens is symmetrical.

11. The image sensor according to claim 10, characterized in that, The superlens includes any one of a cylindrical superlens, a square superlens, or a cross-shaped superlens.

12. The image sensor according to claim 2, characterized in that, The material of the superlens is a semiconductor material.

13. The image sensor according to claim 12, characterized in that, The semiconductor material includes at least one of silicon, gallium nitride, titanium oxide, and silicon nitride.

14. The image sensor according to claim 2, characterized in that, The substrate is transparent.

15. The image sensor according to claim 14, characterized in that, The substrate material includes at least one of glass and sapphire.

16. The image sensor according to claim 2, characterized in that, The width of the superlens is 50 nanometers to 200 nanometers, and the height of the superlens is 100 nanometers to 1000 nanometers.

17. A camera device, characterized in that, The camera device includes the image sensor according to any one of claims 1 to 16.

18. An image generation method, characterized in that, Applied to an electronic device, the electronic device comprising the image sensor according to any one of claims 1 to 16, the method comprising: In response to the shooting command, the micro-lens array in the image sensor is used to converge the incident light rays so as to convert the optical signal corresponding to the incident light rays into an electrical signal; The target image is generated based on the converted electrical signal.

19. An image generation apparatus, characterized in that, Configured in an electronic device, the electronic device including an image sensor according to any one of claims 1 to 16, the device comprising: The conversion module is configured to, in response to a shooting command, use the microlens array in the image sensor to converge the incident light rays, so as to convert the optical signal corresponding to the incident light rays into an electrical signal; The image generation module is configured to generate the target image based on the converted electrical signal.

20. An electronic device, characterized in that, include: The image sensor according to any one of claims 1 to 16; processor; Memory used to store processor-executable instructions; The processor is configured to perform the image generation method as described in claim 18.

21. A non-transitory computer-readable storage medium, characterized in that, When the instructions in the storage medium are executed by the processor of the electronic device, the electronic device is able to perform the image generation method as described in claim 18.

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